WO2021121324A1 - Diode électroluminescente - Google Patents

Diode électroluminescente Download PDF

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Publication number
WO2021121324A1
WO2021121324A1 PCT/CN2020/137263 CN2020137263W WO2021121324A1 WO 2021121324 A1 WO2021121324 A1 WO 2021121324A1 CN 2020137263 W CN2020137263 W CN 2020137263W WO 2021121324 A1 WO2021121324 A1 WO 2021121324A1
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light
emitting
electrode
semiconductor layer
emitting diode
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PCT/CN2020/137263
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English (en)
Chinese (zh)
Inventor
闫春辉
蒋振宇
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深圳第三代半导体研究院
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Publication of WO2021121324A1 publication Critical patent/WO2021121324A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Definitions

  • This application relates to the field of semiconductors, especially a light-emitting diode.
  • Light-emitting diodes are solid-state components that convert electrical energy into light. Light-emitting diodes have the advantages of small size, high efficiency, and long life, and are widely used in traffic indications, outdoor full-color displays and other fields. In particular, the use of high-power light-emitting diodes can realize semiconductor solid-state lighting, which has caused a revolution in the history of human lighting, and has gradually become a research hotspot in the current electronics field.
  • the current of the light-emitting diode is generally injected into the active light-emitting layer by a lateral diffusion method, and this lateral diffusion method has a natural non-uniform current distribution characteristic, resulting in excessive current density in a local area. Excessive current density in a local area can easily cause two problems:
  • the present application provides a light emitting diode that can improve the uniformity of current distribution, so that the light emitting diode can withstand a higher working current, thereby improving the lumen efficiency and lumen density of the light emitting diode, and reducing the lumen cost.
  • the present application provides a light-emitting diode.
  • the light-emitting diode includes: a substrate; a light-emitting epitaxial layer, including a first semiconductor layer, an active light-emitting layer, and a second semiconductor layer that are sequentially stacked on the substrate; and a first electrode And the second electrode are respectively electrically connected to the first semiconductor layer and the second semiconductor layer; wherein the projections of the first electrode and the second electrode on the substrate are spaced apart from each other, and the shortest separation distance is less than 60 microns, the light emitting epitaxial layer The ratio between the effective light-emitting area and the total area is less than 67%, and the first semiconductor layer and the second semiconductor layer are made of gallium nitride system-based materials; wherein the second semiconductor layer and the active light-emitting layer are provided with grooves The groove and the groove divide the second semiconductor layer and the active light-emitting layer into a plurality of mesa structures spaced apart from each other along the second direction and
  • the present application provides a light-emitting diode.
  • the light-emitting diode includes: a substrate; a light-emitting epitaxial layer, including a first semiconductor layer, an active light-emitting layer, and a second semiconductor layer that are sequentially stacked on the substrate;
  • the electrode and the second electrode are respectively electrically connected to the first semiconductor layer and the second semiconductor layer; wherein the projections of the first electrode and the second electrode on the substrate are staggered with each other, and any one of at least a part of the light-emitting area of the light-emitting epitaxial layer
  • the sum of the shortest distance between the projection of the luminous point on the substrate, the projection of the first electrode on the substrate and the projection of the second electrode on the substrate is not more than 60 microns, the effective luminous area of the luminescent epitaxial layer and the total area
  • the ratio is not more than 67%, and both the first semiconductor layer and the second semiconductor layer are made of materials based on the gallium nit
  • the present application provides a light emitting diode, including: a substrate; a light emitting epitaxial layer, including a first semiconductor layer, an active light emitting layer, and a second semiconductor layer stacked on the substrate in sequence; a first electrode and The second electrode is electrically connected to the first semiconductor layer and the second semiconductor layer; wherein, the projections of the first electrode and the second electrode on the substrate are spaced apart from each other, and the shortest separation distance is less than 60 microns, which is effective for the light-emitting epitaxial layer
  • the ratio between the light-emitting area and the total area is less than 67%, and the first semiconductor layer and the second semiconductor layer are made of materials based on the gallium nitride system.
  • the change rule of the sum of the shortest distance between the projection of any light-emitting point on the substrate, the projection of the first electrode on the substrate and the projection of the second electrode on the substrate, L1+L2, will be based on the gallium nitride material system
  • the sum of the shortest separation distances L1+L2 of the light-emitting diodes is set to be less than 60 microns, and the ratio between the effective light-emitting area of the light-emitting epitaxial layer and the total area is less than 67%.
  • the uniformity of current distribution can be effectively improved, so that the light-emitting diode can withstand a higher working current, thereby improving the lumen efficiency and lumen density of the light-emitting diode.
  • the life and reliability of the light-emitting diode are high, and no complicated package design is required for heat dissipation, which reduces the lumen cost of the light-emitting diode.
  • Fig. 1 is a top view of a light emitting diode according to a first embodiment of the present application
  • Fig. 2 is a schematic partial cross-sectional view taken along the A1-A1 direction of Fig. 1;
  • FIG. 3 is a schematic diagram for describing the variation of the operating voltage of the blue light emitting diode based on the gallium nitride material system with the structure shown in FIG. 1 as a function of L1+L2 under different operating currents;
  • FIG. 4 is a schematic diagram for describing the photoelectric conversion efficiency of a blue light emitting diode based on a gallium nitride material system with the structure shown in FIG. 1 as a function of L1+L2 under different working currents;
  • Fig. 5 is a top view of a light emitting diode according to a second embodiment of the present application.
  • Fig. 6 is a schematic partial cross-sectional view along the A2-A2 direction of Fig. 5;
  • Fig. 7 is a top view of a light emitting diode according to a third embodiment of the present application.
  • Fig. 8 is a top view of a light emitting diode according to a fourth embodiment of the present application.
  • Fig. 9 is a schematic partial cross-sectional view taken along the direction B1-B1 of Fig. 8;
  • FIG. 10 is a schematic diagram illustrating the variation of the operating voltage of the blue light emitting diode based on the gallium nitride material system with the structure shown in FIG. 8 as a function of M1+M2;
  • Fig. 11 is a top view of a light emitting diode according to a fifth embodiment of the present application.
  • Fig. 12 is a schematic partial cross-sectional view taken along the B2-B2 direction of Fig. 11;
  • Fig. 13 is a top view of a light emitting diode according to a sixth embodiment of the present application.
  • Fig. 14 is a schematic partial cross-sectional view taken along the B3-B3 direction of Fig. 13;
  • Fig. 15 is a top view of a light emitting diode according to a seventh embodiment of the present application.
  • Fig. 16 is a schematic partial cross-sectional view taken along the direction B4-B4 in Fig. 15.
  • the light-emitting diode according to the first embodiment of the present application is a light-emitting diode with a front-mounted structure, and includes a substrate 11, a light-emitting epitaxial layer 12, a first electrode 13 and a second electrode 14.
  • the light-emitting epitaxial layer 12 further sequentially stacks a first semiconductor layer 121, an active light-emitting layer 122 and a second semiconductor layer 123 disposed on the substrate 11.
  • the substrate 11 may be made of, for example, sapphire, SiC, GaN, AlN, silicon or other suitable materials.
  • the first semiconductor layer 121 is an N-type semiconductor layer, and the corresponding first electrode 13 is also called an N-type electrode.
  • the second semiconductor layer 123 is a P-type semiconductor layer, and the corresponding second electrode 14 is also called a P-type electrode.
  • the first semiconductor layer 121 and the second semiconductor layer 123 may be a single-layer or multi-layer structure of any other suitable material having different conductivity types.
  • the first electrode 13 and the second electrode 14 are strip-shaped electrodes, and the projection of the first electrode 13 on the substrate 11 and the second electrode 14 on the substrate The projections on the bottom 11 are staggered from each other.
  • the first electrode 13 and the second electrode 14 are finger electrodes extending along the first direction D1 and spaced apart from each other along the second direction D2 perpendicular to the first direction D1, so that The projections of the two on the substrate 11 are staggered.
  • the first electrode 13 and the second electrode 14 are further connected to the first pad 15 and the second pad 16, and are further connected to an external circuit through the first pad 15 and the second pad 16.
  • a trench 124 is provided on the second semiconductor layer 123 and the active light emitting layer 122, and the trench 124 divides the second semiconductor layer 123 and the active light emitting layer 122 into the first direction D1 and the second direction D2 which are more spaced from each other.
  • a mesa structure (Mesa) 125 arranged in an array, and a part of the first semiconductor layer 121 is exposed.
  • the first electrode 13 and the second electrode 14 are respectively disposed in the trenches 124 on both sides of the mesa structure 125.
  • the first electrode 13 is disposed on the first semiconductor layer 121 and is electrically connected to the first semiconductor layer 121.
  • the first electrode 13 and the first semiconductor layer 121 are electrically connected by direct contact.
  • the mesa structure 125 and the first semiconductor layer 121 exposed by the first electrode 13 are further covered with an insulating layer 17.
  • the insulating layer 17 extends along the sidewalls of the mesa structure 125 to the top of the mesa structure 125 and at least partially exposes the top of the mesa structure 125
  • the second semiconductor layer 123, the current diffusion layer 18 and the second semiconductor layer 123 are electrically connected.
  • the current diffusion layer 18 further extends into the trench 124 and is electrically isolated from the first semiconductor layer 121 and the active light emitting layer 122 by the insulating layer 17.
  • the second electrode 14 is disposed on the current diffusion layer 18 in the trench 124 and is electrically connected to the second semiconductor layer 123 through the current diffusion layer 18.
  • first electrode 13 and the second electrode 14 may also be electrically connected to the first semiconductor layer 121 and the second semiconductor layer 123 in other ways, including but not limited to the other ways described below.
  • the current formed by electrons is injected from the first electrode 13 into the first semiconductor layer 121, diffuses laterally along the first semiconductor layer 121 and injected into the active light-emitting layer 122, and the current formed by holes passes through the second electrode 14
  • the current diffusion layer 18 is injected into the second semiconductor layer 123, diffuses laterally along the current diffusion layer 18 and the second semiconductor layer 123 and injected into the active light emitting layer 122.
  • the electrons and holes undergo radiation recombination in the active light-emitting layer 122 and generate photons, thereby forming light emission. Furthermore, as shown in FIG.
  • the cross section of the mesa structure 125 along the second direction D2 is arranged in a trapezoid shape, so that the light generated by the active light-emitting layer 122 can be emitted from the inclined sidewall of the mesa structure 125 to improve the light extraction efficiency.
  • the insulating layer 17 uses a transparent dielectric material (for example, SiO 2 ), and the current diffusion layer 18 uses a transparent conductive material (for example, ITO). The insulating layer 17 further protects and electrically isolates the mesa structure 125 from water and oxygen.
  • the distance that the current in the light-emitting epitaxial layer 12 spreads laterally is determined by the lateral distance between the first electrode 13 and the second electrode 14.
  • the lateral distance between the first electrode 13 and the second electrode 14 is set too large, resulting in poor uniformity of the current density distribution of the current injected into the active light-emitting layer 122, thereby resulting in the above background technology The problem described in.
  • the shortest distance between the projection of any light-emitting point A in at least part of the light-emitting area of the light-emitting epitaxial layer 12 on the substrate 11 and the projection of the first electrode 13 on the substrate 11 is L1, which is The shortest distance between the projections of the two electrodes 14 on the substrate 11 is L2.
  • the sum of the two shortest separation distances is L1+L2, and the sum of the shortest separation distances L1+L2 is determined by the lateral distance between the first electrode 13 and the second electrode 14.
  • the effective light-emitting area of the light-emitting epitaxial layer 12 is smaller than the total area of the light-emitting epitaxial layer 12, and the gap between the first electrode 13 and the second electrode 14
  • the lateral distance between the two electrodes 14 is set as large as possible, usually greater than the lateral diffusion length of the current.
  • the applicant of this application through a large number of experiments, by reasonably setting the sum of the shortest separation distance L1+L2 and the effective light-emitting area loss, so that the reduction in the lateral spacing improves the performance of the light-emitting diode and the benefit is far greater than the sacrifice of the effective light-emitting area.
  • it can ensure that the first electrode 13 and the second electrode 14 can withstand a relatively large working current, which in turn makes the performance of the light-emitting diode a huge improvement.
  • the variation of the working voltage VF and the photoelectric conversion efficiency WPE with the sum of the shortest separation distance L1+L2 under different working currents will be used to determine the sum of the shortest separation distance L1+L2 and the light-emitting epitaxial layer.
  • a reasonable setting between the effective light-emitting area Se and the ratio Se/Sa of the total area Sa will be explained.
  • the effective light-emitting area Se is equal to the total area Sa minus the non-light-emitting area due to the existence of the trench 124, the first electrode 13 and/or the second electrode 14, and the pad.
  • FIG. 3 shows the change curve of the operating voltage of the light emitting diode with L1+L2 under different operating currents when the first semiconductor layer and the second semiconductor layer are made of blue light emitting diodes based on gallium nitride system materials.
  • the so-called blue light emitting diode refers to a light emitting diode with a peak wavelength between 440 nm and 480 nm during operation.
  • the so-called gallium nitride material system means that in the material system, the molar proportion of nitrogen in anions is not less than 90%, and the molar proportion of gallium in cations is not less than 90%.
  • an existing light-emitting diode with L1+L2 being 100 microns and Se/Sa being 85% is used as a reference sample, where the size of the light-emitting diode chip is 425 microns * 750 microns, and the first electrode 13 and the second electrode 14 extends along the length of 750 microns, and uses the light-emitting diodes with L1+L2 of 72, 60, 50, 40, 30, and 20 microns respectively as the comparative samples, fitting the working voltage VF and photoelectric conversion efficiency WPE with L1+L2 The law of change.
  • each The Se/Sa of the comparative sample was set to 75%, 67%, 60%, 55%, 40%, and 25%, respectively.
  • the normalized working voltage VF decreases slowly with the decrease of L1+L2, and after reducing to 72 microns, the normalized working voltage VF decreases significantly, and The greater the current, the greater the falling slope.
  • FIG. 4 shows the variation curve of the photoelectric conversion efficiency WPE of the blue light emitting diode with L1+L2 under different working currents.
  • the normalized photoelectric conversion efficiency WPE shows a downward trend with the decrease of L1+L2, and only at a large operating current, the normalized photoelectric conversion efficiency As L1+L2 decreases, it shows a slow upward trend. After decreasing to 72 microns, the normalized photoelectric conversion efficiency showed an upward trend with the decrease of L1+L2 at each operating current, and the larger the current, the greater the rising slope.
  • the sum of the shortest separation distances L1+L2 is set to be no more than 60 microns, and the ratio Se/Sa between the effective light-emitting area of the light-emitting epitaxial layer 12 and the total area is set to be no more than 67% .
  • the uniformity of current distribution can be effectively improved, so that the light-emitting diode can withstand a higher working current, thereby improving the lumen efficiency and lumen density of the light-emitting diode.
  • the life and reliability of the light-emitting diode are high, and no complicated package design is required for heat dissipation, which reduces the lumen cost of the light-emitting diode.
  • the sum of the shortest separation distances L1+L2 can be set to be between 30 microns and 60 microns, and the ratio Se/Sa between the effective light-emitting area of the light-emitting epitaxial layer and the total area can be set to be between 40%- Between 67%. Further, the sum of the shortest separation distances L1+L2 can be set to be between 30 microns and 50 microns, and the ratio Se/Sa between the effective light-emitting area of the light-emitting epitaxial layer and the total area can be set to be between 40%- Between 60%.
  • the sum of the shortest separation distances L1+L2 can be set to be less than 20 microns according to actual needs, and the ratio Se/Sa between the effective light-emitting area of the light-emitting epitaxial layer and the total area can be set to be less than 25%, or Set the sum of the shortest separation distance L1+L2 to be between 20 microns and 30 microns, and set the ratio of the effective light-emitting area of the light-emitting epitaxial layer to the total area Se/Sa to be between 25% and 40%, or Set the sum of the shortest separation distance L1+L2 to be between 30 micrometers and 40 micrometers, and set the ratio of the effective light-emitting area of the light-emitting epitaxial layer to the total area Se/Sa to be between 40% and 55% , Or set the sum of the shortest separation distance L1+L2 to be between 40 microns and 50 microns, and set the ratio of the effective light-emitting area of the light-emitting
  • At least part of the light-emitting area constrained by the above-mentioned size and ratio covers all the light-emitting area of the light-emitting epitaxial layer 12, that is, all the mesa structures 125.
  • at least part of the above-mentioned light-emitting area may be configured to include one or more mesa structures 125.
  • the area ratio of the set of all at least part of the light-emitting regions that meet the above constraint conditions to the total light-emitting regions on the light-emitting epitaxial layer 12 may be further not less than 50%, 60%, 70%, 80%, 90%. .
  • the constraining method of the present embodiment regarding the sum of the shortest separation distances L1+L2 and the ratio Se/Sa between the effective light-emitting area and the total area is particularly suitable for high-power light-emitting diodes.
  • the average current density J during operation of the light emitting diode is set to be not less than 0.5 A/mm 2 .
  • the average current density J during operation of the light emitting diode can be further set to not less than 0.75, 1, 1.5, 2, 3, 5, 10, 20 A/mm 2.
  • the total number of the first electrode 13 and the second electrode 14 is set to not less than 5, 7, 9, or 11.
  • the above size and ratio limitations are also applicable to light-emitting diodes based on other peak wavelengths of the gallium nitride material system, such as 365nm-400nm, 400nm-440nm, 440nm-480nm, 480nm-540nm, 540nm-560nm, 560nm -600nm or 600nm-700nm.
  • the sum of the shortest separation distance L1+L2 in this embodiment is actually limited by the shortest separation distance between the projections of the first electrode 13 and the second electrode 14 on the substrate 11. Therefore, in this embodiment And in other embodiments, the shortest separation distance between the projections of the first electrode 13 and the second electrode 14 on the substrate 11 can be restricted by using the above-mentioned size limitation. Specifically, the shortest separation distance between the projections of the first electrode 13 and the second electrode 14 on the substrate 11 can be set to not greater than 60, 50, 40, 30, and 20 microns according to actual needs.
  • the uniformity of the current distribution is effectively improved, so that the light-emitting diode can withstand a higher working current, thereby improving the lumen efficiency and lumen density of the light-emitting diode.
  • the life and reliability of the light-emitting diode are high, and no complicated package design is required for heat dissipation, which reduces the lumen cost of the light-emitting diode.
  • the above design ideas can be applied to light emitting diodes using other material systems of the above structure, such as aluminum gallium nitride material system, indium gallium nitride material system, aluminum gallium indium phosphide material system.
  • the so-called aluminum gallium nitride material system means that in the material system, the molar proportion of nitrogen in the anion is not less than 90%, and the molar proportion of aluminum and gallium in the cation is not less than 90%, and aluminum The molar ratio of the element in the cation is not less than 10%.
  • indium gallium nitride material system means that in the material system, the molar proportion of nitrogen in the anion is not less than 90%, the molar proportion of indium and gallium in the cation is not less than 90%, and the indium is in The molar ratio of the cations is not less than 10%.
  • aluminum gallium indium phosphide system means that in the material system, the molar proportion of phosphorus in the anion is not less than 90%, and the molar proportion of aluminum, indium and gallium in the cation is not less than 90%.
  • the sum of the shortest separation distances L1+L2 is set to be no more than 80 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be no more than 72%. Further, the sum of the shortest separation distances L1+L2 is set to be between 30 microns and 60 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 40% and 67% .
  • the sum of the shortest separation distance L1+L2 is set to be between 60 microns and 80 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 67% and 72% .
  • the sum of the shortest separation distances L1+L2 is set to be between 30 microns and 50 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 40% and 60% between.
  • the sum of the shortest separation distances L1+L2 is set to be less than 20 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be less than 25%.
  • the sum of the shortest separation distances L1+L2 is set to be between 20 ⁇ m and 30 ⁇ m, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 25% and 40%.
  • the sum of the shortest separation distances L1+L2 is set to be between 30 microns and 40 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 40% and 55% .
  • the sum of the shortest separation distances L1+L2 is set to be between 40 microns and 50 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 55% and 60% .
  • the sum of the shortest separation distances L1+L2 is set to be between 50 ⁇ m and 60 ⁇ m, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 60% and 67%.
  • the peak wavelength of the light emitting diode based on the indium gallium nitride material system during operation can be between 400nm-440nm, 440nm-480nm, 480nm-540nm, 540nm-560nm, 560nm-600nm, 600nm-700nm or 700nm-850nm.
  • the sum of the shortest separation distances L1+L2 is set to be no more than 100 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be no more than 75%. Further, the sum of the shortest separation distances L1+L2 is set to be between 30 microns and 60 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 40% and 67% .
  • the sum of the shortest separation distance L1+L2 is set to be between 60 microns and 80 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 67% and 72% .
  • the sum of the shortest separation distances L1+L2 is set to be between 80 microns and 100 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 72% and 75%
  • the sum of the shortest separation distances L1+L2 is set to be between 30 microns and 50 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 40% and 60% between.
  • the sum of the shortest separation distances L1+L2 is set to be less than 20 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be less than 25%.
  • the sum of the shortest separation distances L1+L2 is set to be between 20 micrometers and 30 micrometers, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be 25%-40%.
  • the sum of the shortest separation distances L1+L2 is set to be between 30 microns and 40 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 40% and 55% .
  • the sum of the shortest separation distances L1+L2 is set to be between 40 microns and 50 microns, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 55% and 60% .
  • the sum of the shortest separation distances L1+L2 is set to be between 50 ⁇ m and 60 ⁇ m, and the ratio Se/Sa of the effective light-emitting area Se of the light-emitting epitaxial layer to the total area Sa is set to be between 60% and 67%.
  • the peak wavelength of the light emitting diode based on the aluminum indium gallium phosphide material system can be between 560nm-600nm, 600nm-700nm, 700nm-850nm, 850nm-980nm, 980nm-1300nm or 1300nm-1600nm during operation.
  • the light-emitting diode according to the second embodiment of the present application is a modification of the front-mounted structure shown in FIGS. 1 and 2, and includes a substrate 21, a light-emitting epitaxial layer 22, a first electrode 23, and a first electrode 23. Two electrodes 24.
  • the light-emitting epitaxial layer 22 further sequentially stacks a first semiconductor layer 221, an active light-emitting layer 222, and a second semiconductor layer 223 disposed on the substrate 21.
  • a trench 224 is provided on the second semiconductor layer 223 and the active light emitting layer 222, and the trench 224 divides the second semiconductor layer 223 and the active light emitting layer 222 into a second direction D2' spaced apart from each other and integrated along the first direction D1'
  • a plurality of mesa structures 225 are provided, and a portion of the first semiconductor layer 221 is exposed.
  • the first direction D1 ′ is the extending direction of the first electrode 23 and the second electrode 24, and the second direction D2 ′ is the separation direction of the first electrode 23 and the second electrode 24.
  • the first electrode 23 and the second electrode 24 are further connected to the pads 25 and 26, respectively.
  • the main difference between the light emitting diode of this embodiment and the light emitting diode shown in FIGS. 1 and 2 is that the second electrode 24 is directly disposed on the second semiconductor layer 123 on the top of the mesa structure 225 and is electrically connected to the second semiconductor layer 124.
  • the second electrode 24 is electrically connected to the second semiconductor layer 223 through the current diffusion layer 27 provided thereunder.
  • the main purpose of the current spreading layer 27 is to improve the uniformity of current spreading of the second semiconductor layer 223, and a transparent material (such as ITO) with a higher conductivity than the second semiconductor layer 223 can be used.
  • the light emitting diode of this embodiment further includes a current blocking layer 28 disposed directly under the second electrode 24 and between the current diffusion layer 27 and the second semiconductor layer 223. Since the first electrode 23 and the second electrode 24 generally use metal materials, the light generated by the light-emitting epitaxial layer 22 cannot pass through the second electrode 24.
  • the function of the current blocking layer 28 is to prevent current from being directly injected from the second electrode 24 into the light-emitting epitaxial layer 22 directly below the second electrode 24, thereby reducing the amount of light blocked by the second electrode 24 and improving the lumen efficiency.
  • the light emitting diode in this embodiment further includes a transparent dielectric layer 29 (for example, SiO 2 ) covering the inclined sidewall of the mesa structure 225.
  • a transparent dielectric layer 29 for example, SiO 2
  • the function of the transparent medium layer 29 is to protect the mesa structure 225 from water and oxygen and electrically isolate it.
  • the difference between the light-emitting diode according to the third embodiment of the present invention and the light-emitting diode shown in FIGS. 5 and 6 is that a part of the second electrode 34 is provided in the trench 324 in the form of a main electrode 341, The other part of the second electrode 34 extends to the top of the mesa structure 325 in the form of a branch electrode 342 and forms an electrical connection with the second semiconductor layer (not shown).
  • the sum of the shortest separation distance between any light-emitting point A′ of at least a part of the light-emitting area of the light-emitting diode in the second and third embodiments described above and the projection of the first electrode and the second electrode on the substrate L1 '+L2' and the shortest distance between the projections of the first electrode and the second electrode on the substrate are also restricted by the above-mentioned dimensions, and the ratio between the effective light-emitting area and the total area of the light-emitting epitaxial layer is also affected by the above-mentioned ratio Constraints.
  • the light emitting diode includes a substrate 41, a light emitting epitaxial layer 42, a first electrode 43 and a second electrode 44.
  • the light-emitting epitaxial layer 42 further sequentially stacks a first semiconductor layer 421, an active light-emitting layer 422, and a second semiconductor layer 423 disposed on the substrate 41.
  • the substrate 41 may be made of conductive materials such as Si, Ge, Cu, CuW, etc.
  • the first semiconductor layer 421 is a P-type semiconductor layer, and the corresponding first electrode 43 is also referred to as a P-type electrode.
  • the second semiconductor layer 423 is an N-type semiconductor layer, and the corresponding second electrode 44 is also referred to as an N-type electrode.
  • the first semiconductor layer 421 and the second semiconductor layer 423 may be a single-layer or multi-layer structure of any other suitable materials with different conductivity types.
  • the first electrode 43 is a surface electrode
  • the plurality of second electrodes 44 are strip-shaped electrodes
  • the projection on the substrate 41 falls on the first electrode 43 on the substrate 41.
  • the projections are arranged inside and spaced apart from each other.
  • the second electrodes 44 are respectively finger electrodes extending along the first direction D1" and spaced apart from each other along the second direction D2" perpendicular to the first direction D1", so that the second The projections of the electrodes 44 on the substrate 41 are spaced apart from each other along the second direction D2".
  • the first electrode 43 and the second electrode 44 are further connected to a first pad (not shown) and a second pad 46, and are further connected to an external circuit through the first pad and the second pad 46.
  • the light-emitting diode is a vertical light-emitting diode
  • the second electrode 44 and the first electrode 43 are respectively located on opposite sides of the light-emitting epitaxial layer 420.
  • the second electrode 44 is disposed on the side of the second semiconductor layer 423 away from the active light-emitting layer 422, and the second electrode 44 is electrically connected to the second semiconductor layer 423.
  • the second electrode 44 is connected to the second semiconductor layer 423.
  • the two semiconductor layers 423 are electrically connected by direct contact.
  • the first electrode 43 is disposed on the side of the substrate 41 away from the light-emitting epitaxial layer 42, and forms an electrical connection with the first semiconductor layer 421 through the substrate 41. Furthermore, a metal bonding layer 47 and a reflecting mirror 48 may be further provided between the substrate 41 and the first semiconductor layer 421. The reflecting mirror 48 is used to reflect the light generated by the active light-emitting layer 422, and further remove the light from the second semiconductor layer. Light is emitted from the side where the layer 423 is located, and the metal bonding layer 47 is used to improve the adhesion of the light-emitting epitaxial layer 42.
  • the projection of the second electrode 44 on the substrate 41 and the projection of the first electrode 43 on the substrate 41 overlap each other, and then fall within the projection of the first electrode 43 on the substrate 41.
  • the inside of the projection of the first electrode 43 on the substrate 41 referred to in the present application includes both the overlap with the projection of the first electrode 43 on the substrate 41 shown in FIG. 9 and the subsequent The one shown in Figures 15-16 is surrounded by the projection of the first electrode on the substrate.
  • the current formed by holes is directly injected into the active light-emitting layer 42 from the first electrode 43 through the substrate 41, the metal bonding layer 47 and the mirror 48 in the stacking direction, and the current formed by electrons is from the second
  • the electrode 44 is injected into the second semiconductor layer 43, and is laterally diffused along the second semiconductor layer 423 and injected into the active light emitting layer 422.
  • the electrons and holes undergo radiative recombination in the active light-emitting layer 422 and generate photons, thereby forming light emission.
  • the distance at which the current in the light-emitting epitaxial layer 42 spreads laterally is determined by the lateral distance between adjacent second electrodes 44.
  • the lateral spacing between adjacent second electrodes 44 is set too large, resulting in poor uniformity of the current density distribution of the current injected into the active light-emitting layer 422, which in turn results in the above-mentioned background art. Describe the problem.
  • the shortest distance between the projection of any light-emitting point B in at least part of the light-emitting area of the light-emitting epitaxial layer 42 on the substrate 41 and the projection of the two adjacent second electrodes 44 on the substrate 41 are M1 and M2 respectively.
  • the sum of the two shortest separation distances is M1+M2.
  • Fig. 10 shows that the structure shown in Fig. 8 and Fig. 9 and the first semiconductor layer and the second semiconductor layer are both blue light emitting diodes based on gallium nitride system materials.
  • the working voltage of the light emitting diode increases with M1 under different working currents. +M2 change curve.
  • the Se/Sa of each of the above-mentioned comparative samples is set to 70. %, 65%, 63% and 45%.
  • the 230-micron size sample saturates prematurely under high current and cannot be normalized, the actual voltage is used to represent it. It can be seen from the figure that under the high-power current injection of 1A/mm 2 and 2A/mm 2 , when the size is reduced to about 100 microns, the voltage drops sharply. For the super current injection of 5A/mm 2 , the 230-micron size sample has already saturated and failed, while the 105-micron, 50-micron, and 30-micron sizes can still work. Under the super current injection of 10A/mm 2 , the 230 and 105 micron size samples have already saturated and failed, while the 50 micron and 30 micron sizes can still work.
  • the sum of the shortest separation distances M1+M2 is set to be not greater than 100 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is not greater than 70%.
  • the uniformity of current distribution can be effectively improved, so that the light-emitting diode can withstand a higher working current, thereby improving the lumen efficiency and lumen density of the light-emitting diode.
  • the life and reliability of the light-emitting diode are high, and no complicated package design is required for heat dissipation, which reduces the lumen cost of the light-emitting diode.
  • the sum of the shortest separation distances M1+M2 can be further set to be between 30 microns and 60 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa can be set to be between 45% and 60%. between.
  • the sum of the shortest separation distance M1+M2 is further set to be between 60 microns and 100 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 60% and 70%
  • the sum of the shortest separation distances M1+M2 is set to be less than 20 microns, the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be less than 38%, or the sum of the shortest separation distances M1+M2 is set to be medium Between 20 ⁇ m and 30 ⁇ m, the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 38% and 45%.
  • the sum of the shortest separation distances M1+M2 is set to be between 30 microns and 40 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 45% and 55%.
  • the sum of the shortest separation distances M1+M2 is set to be between 40 microns and 60 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 55% and 60%.
  • the sum of the shortest separation distances M1+M2 is set to be between 60 microns and 80 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 60% and 65%.
  • the sum of the shortest separation distances M1+M2 is set to be between 80 microns and 100 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 65% and 70%.
  • the area ratio of the set of all at least part of the light-emitting regions satisfying the above constraint conditions to the total light-emitting regions on the light-emitting epitaxial layer 32 may be further not less than 50%, 60%, 70%, 80%, 90%.
  • the average current density J during operation of the light emitting diode is set to be not less than 0.5 A/mm 2 .
  • the average current density J during operation of the light emitting diode can be further set to not less than 1, 1.5, 2, 3, 5, 10, 20 A/mm 2 .
  • the total number of the second electrodes 34 is set to not less than 5, 7, 9 or 11.
  • the sum of the shortest separation distances M1+M2 in this embodiment is actually limited by the shortest separation distances between the projections of two adjacent second electrodes 44 on the substrate 41. Therefore, in this embodiment and other embodiments In the above-mentioned size, the shortest separation distance between the projections of two adjacent second electrodes 44 on the substrate 41 can be constrained. Specifically, the shortest distance between the projections of two adjacent second electrodes 44 on the substrate 41 is set to be no more than 100 microns.
  • the constraints of the aluminum gallium nitride material system, the indium gallium nitride material system and the aluminum gallium indium phosphide material system can be given.
  • the sum of the shortest separation distances M1+M2 is set to be no more than 80 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be no more than 65%.
  • the sum of the shortest separation distances M1+M2 can be further set to be between 30 microns and 60 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa can be set to be between 45% and 60%. between.
  • the sum of the shortest separation distances M1+M2 is further set to be between 60 microns and 80 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 60% and 65%.
  • the sum of the shortest separation distances M1+M2 is set to be less than 20 microns, the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be less than 38%, or the sum of the shortest separation distances M1+M2 is set to be medium Between 20 ⁇ m and 30 ⁇ m, the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 38% and 45%.
  • the sum of the shortest separation distances M1+M2 is set to be between 30 microns and 40 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 45% and 55%.
  • the sum of the shortest separation distances M1+M2 is set to be between 40 microns and 60 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 55% and 60%.
  • the sum of the shortest separation distances L1+L2 is set to be no more than 120 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be no more than 72%.
  • the sum of the shortest separation distances M1+M2 can be further set to be between 30 microns and 60 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa can be set to be between 45% and 60%. between.
  • the sum of the shortest separation distances M1+M2 is further set to be between 60 microns and 80 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 60% and 65%.
  • the sum of the shortest separation distances M1+M2 is further set to be between 80 microns and 120 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 65% and 72%.
  • the sum of the shortest separation distances M1+M2 is set to be less than 20 microns, the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be less than 38%, or the sum of the shortest separation distances M1+M2 is set to be medium Between 20 ⁇ m and 30 ⁇ m, the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 38% and 45%.
  • the sum of the shortest separation distances M1+M2 is set to be between 30 microns and 40 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 45% and 55%.
  • the sum of the shortest separation distances M1+M2 is set to be between 40 microns and 60 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 55% and 60%.
  • the sum of the shortest separation distances L1+L2 is set to be no more than 150 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be no more than 75%.
  • the sum of the shortest separation distances M1+M2 can be further set to be between 30 microns and 60 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa can be set to be between 45% and 60%. between.
  • the sum of the shortest separation distances M1+M2 is further set to be between 60 microns and 100 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 60% and 70%.
  • the sum of the shortest separation distances M1+M2 is further set to be between 100 microns and 150 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 65% and 75%.
  • the sum of the shortest separation distances M1+M2 is set to be less than 20 microns, the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be less than 38%, or the sum of the shortest separation distances M1+M2 is set to be medium Between 20 ⁇ m and 30 ⁇ m, the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 38% and 45%.
  • the sum of the shortest separation distances M1+M2 is set to be between 30 microns and 40 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 45% and 55%.
  • the sum of the shortest separation distances M1+M2 is set to be between 40 microns and 60 microns, and the ratio Se/Sa of the effective light-emitting area Se to the total area Sa is set to be between 55% and 60%.
  • the peak wavelength of the above-mentioned aluminum gallium nitride-based vertical light-emitting diodes is between 220nm-260nm, 260nm-300nm, 300nm-320nm or 320nm-365nm.
  • the peak wavelengths of other material systems are the same as those described above.
  • the formally mounted light-emitting diodes are the same, so I won’t repeat them here.
  • the uniformity of the current distribution is effectively improved, so that the light-emitting diode can withstand a higher working current, thereby improving the lumen efficiency and lumen density of the light-emitting diode.
  • the life and reliability of the light-emitting diode are high, and no complicated package design is required for heat dissipation, which reduces the lumen cost of the light-emitting diode.
  • the light emitting diode according to the second embodiment of the present application is a modification of the vertical structure light emitting diode shown in FIGS. 8 and 9.
  • the light-emitting diode also includes a first electrode 53, a substrate 51, a metal bonding layer 57, a mirror 58, a first semiconductor layer 521, and an active material similar to the light-emitting diode shown in FIG. 8 and FIG.
  • the light emitting layer 522, the second semiconductor layer 523, and the second electrode 54 is:
  • the first semiconductor layer 521, the second semiconductor layer 523, and the active light emitting layer 522 are provided with trenches 524.
  • the trenches 524 arrange the first semiconductor layer 521, the second semiconductor layer 523, and the active light emitting layer 522 at intervals.
  • An insulating layer 591 and a current diffusion layer 592 are formed in the sidewall of the mesa structure 525 and the exposed area of the mesa structure 525.
  • Two adjacent second electrodes 54 are respectively disposed in the trenches 524 on both sides of the mesa structure 525, and are electrically connected to the second semiconductor layer 523 through the current diffusion layer 592.
  • any light-emitting point B′ in at least a part of the light-emitting region of the light-emitting epitaxial layer formed by the first semiconductor layer 521, the second semiconductor layer 523 and the active light-emitting layer 522 is on the substrate 51
  • the shortest distance between the projection on the upper surface and the projection of the two adjacent second electrodes 54 on the substrate 51 are respectively M1' and M2'.
  • the sum of the two shortest separation distances is M1'+M2'.
  • the light emitting diode according to the sixth embodiment of the present application is a further modification of the vertical structure light emitting diode shown in FIGS. 11 and 12.
  • the light-emitting diode also includes a first electrode 63, a substrate 61, a metal bonding layer 67, a mirror 68, a first semiconductor layer 621, and an active The light emitting layer 622, the second semiconductor layer 623, and the second electrode 64.
  • first semiconductor layer 621, the active light emitting layer 622, and the second semiconductor layer 623 are also divided into mesa structures 625 spaced from each other by the trenches 624, and are formed on the sidewalls of the mesa structure 625 and the exposed area of the mesa structure 625 There is an insulating layer 691.
  • the difference between this embodiment and the light emitting diode shown in FIG. 11 and FIG. 12 is:
  • a part of the second electrode 64 is provided in the trench 624 in the form of a main electrode 643, and another part of the second electrode 64 is extended to the top of the mesa structure 625 in the form of a branch electrode 644, and is in contact with the second semiconductor layer 623 and formed Electric connection.
  • the branch electrode 644 realizes point injection of current into the second semiconductor layer 623. As shown in FIG.
  • the projection of any light-emitting point B" in at least part of the light-emitting area of the light-emitting epitaxial layer formed by the first semiconductor layer 621, the second semiconductor layer 623 and the active light-emitting layer 622 on the substrate 61 The shortest distances between the projections of the two adjacent second electrodes 64 on the substrate 61 are M1" and M2', respectively. The sum of the two shortest separation distances is M1"+M2".
  • the light-emitting diode according to the seventh embodiment of the present application is a flip-chip light-emitting diode, which includes a substrate 71, a light-emitting epitaxial layer 72, a first electrode 73 and a second electrode 74.
  • the first electrode 73 is a surface electrode
  • the number of the second electrode 74 is multiple, and the two are located on the same side of the light emitting diode.
  • the light-emitting epitaxial layer 72 further sequentially stacks a first semiconductor layer 721, an active light-emitting layer 722, and a second semiconductor layer 723 disposed on the substrate 71.
  • the first electrode 73 is disposed on a side of the second semiconductor layer 723 away from the substrate 71 and is electrically connected to the second semiconductor layer 723.
  • a mirror 79 is further provided between the first electrode 73 and the second semiconductor layer 723 to reflect the light generated by the active light-emitting layer 722, and then emit light from the side where the substrate 71 is located.
  • a plurality of grooves 724 are provided on the surface of the first electrode 73, and the grooves 724 extend to the first semiconductor layer 721 via the reflector 79, the second semiconductor layer 723 and the active light emitting layer 722.
  • the plurality of second electrodes 74 are respectively disposed in the corresponding grooves 724 and are electrically connected to the first semiconductor layer 721.
  • the first semiconductor layer 421 is an N-type semiconductor layer (for example, N-type GaN), and the corresponding second electrode 74 is also referred to as an N-type electrode.
  • the second semiconductor layer 723 is a P-type semiconductor layer (for example, P-type GaN), and the corresponding first electrode 73 is also referred to as a P-type electrode.
  • the first semiconductor layer 721 and the second semiconductor layer 723 may be a single-layer or multi-layer structure of any other suitable materials with different conductivity types.
  • the projection of any light-emitting point B"' in at least part of the light-emitting area of the light-emitting epitaxial layer 72 on the substrate 71 and the projection of the two adjacent second electrodes 74 on the substrate 71 are the shortest
  • the separation distances are respectively M1"' and M2"'.
  • the sum of the two shortest separation distances is M1"'+M2"'.

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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

La présente invention concerne une diode électroluminescente comprenant : un substrat ; une couche épitaxiale électroluminescente, comprenant une première couche semi-conductrice, une couche électroluminescente active et une seconde couche semi-conductrice qui sont empilées séquentiellement sur le substrat ; et une première électrode et une seconde électrode, respectivement connectées électriquement à la première couche semi-conductrice et à la seconde couche semi-conductrice. Les projections de la première électrode et de la seconde électrode sur le substrat sont décalées l'une par rapport à l'autre ; la somme des distances les plus courtes entre la projection, sur le substrat, de n'importe quel point d'émission de lumière dans au moins une région d'émission de lumière partielle de la couche épitaxiale électroluminescente et la projection de la première électrode sur le substrat et entre la projection dudit point d'émission de lumière sur le substrat et la projection de la seconde électrode sur le substrat est inférieure à 60 micromètres ; le rapport de la zone d'émission de lumière efficace de la couche épitaxiale électroluminescente à la surface totale de celle-ci est inférieur à 67 % ; la première couche semi-conductrice et la seconde couche semi-conductrice sont constituées d'un matériau à base d'un système de nitrure de gallium. De cette manière, la présente invention peut améliorer efficacement l'uniformité de distribution de courant, améliorer la densité de lumière ainsi que le rendement lumineux de la diode électroluminescente, et réduire le coût de la lumière.
PCT/CN2020/137263 2019-12-17 2020-12-17 Diode électroluminescente WO2021121324A1 (fr)

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