WO2021119900A1 - Plateau pneumatique pour la croissance de matériau de gan - Google Patents

Plateau pneumatique pour la croissance de matériau de gan Download PDF

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Publication number
WO2021119900A1
WO2021119900A1 PCT/CN2019/125531 CN2019125531W WO2021119900A1 WO 2021119900 A1 WO2021119900 A1 WO 2021119900A1 CN 2019125531 W CN2019125531 W CN 2019125531W WO 2021119900 A1 WO2021119900 A1 WO 2021119900A1
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WO
WIPO (PCT)
Prior art keywords
disk
tray
center
master
gan material
Prior art date
Application number
PCT/CN2019/125531
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English (en)
Chinese (zh)
Inventor
黄业
刘鹏
王健辉
卢敬权
Original Assignee
东莞市中镓半导体科技有限公司
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Publication date
Application filed by 东莞市中镓半导体科技有限公司 filed Critical 东莞市中镓半导体科技有限公司
Priority to PCT/CN2019/125531 priority Critical patent/WO2021119900A1/fr
Publication of WO2021119900A1 publication Critical patent/WO2021119900A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere

Definitions

  • This application relates to the technical field of GaN material growth devices, for example, to a pneumatic tray for GaN material growth.
  • GaN Gallium nitride
  • HVPE Hydride vapor phase epitaxy
  • the key factors include the need to obtain a stable laminar flow field in the HVPE reaction chamber and the provision of trays that can rotate at a high temperature of not less than 800°C.
  • the rotation of the tray is realized by a traditional motor, and it is difficult to obtain a stable rotation speed due to the limitation of high temperature in the process environment.
  • the existing connection gap between the composite structure of the daughter disk and the master disk is easy to grow GaN polycrystalline. With the process time, the GaN polycrystalline will become thicker and thicker, which will eventually lead to the integration of the daughter disk and the master disk. Rotation, which in turn leads to process failure.
  • the present application provides a pneumatic tray for GaN material growth, which can be used under high temperature conditions without disturbing the reaction conditions of the reaction gas above the tray.
  • a pneumatic tray for GaN material growth comprising a sub-disk and a master disk.
  • the upper surface of the master disk is provided with a disk position for placing the sub-disk, and the disk position is provided with a position close to the center of the disk position.
  • a spiral groove extending to the edge of the disk position, one end of the groove close to the center of the disk position communicates with the air source, and the other end of the groove communicates with the outside.
  • the sub-disk and the mother-disk are made of graphite, ceramic or quartz materials.
  • the upper surface of the sub-disk is provided with workpiece grooves for placing the substrate, and the number of the workpiece grooves is 1 or more and 10 or less.
  • the outer peripheral edge of the sub-disk extends downward to form a guide boss, the guide boss is located on the outer side of the side wall of the bay, and an opening is formed between the guide boss and the side wall of the bay and faces downward The exhaust port.
  • the center of the disk position is located at the center of the master disk, the guide boss is wrapped around the outer side of the side wall of the master disk, and the end of the groove away from the center of the disk position passes through the exhaust port Connect with the outside world.
  • the number of the bays is one.
  • the center of the disk position is deviated from the center of the master disk, an air storage cavity is provided on the master disk around the disk position, and the side of the air storage cavity away from the center of the master disk penetrates the master disk
  • An edge gap is formed on the side wall of the groove; the end of the groove away from the center of the disk position communicates with the air storage cavity through the exhaust port, and communicates with the outside through an edge gap provided on the air storage cavity.
  • the number of the bays is one, and the bays are eccentrically arranged with the mother disk; or,
  • the number of the disk positions is at least two, and the at least two disk positions are equally spaced along the circumferential direction of the master disk.
  • the number of bays may be five.
  • An exhaust passage is arranged between the air storage cavity and the side wall of the master disk.
  • the exhaust duct is located on both sides of the edge gap.
  • the number of exhaust passages for each disk position is four, and two exhaust passages are respectively provided on both sides of the edge gap.
  • a disk gap is provided between the outer peripheral side wall of the sub disk and the inner side wall of the master disk, and the width of the disk gap is smaller than the width of the air storage cavity.
  • the disc gap can be selected according to the thickness specifications of the GaN single crystal product, and the distance of the disc gap is equal to 1.2 to 2 times the thickness of the GaN single crystal product.
  • An air collection cavity is provided in the middle of the master disk, the air collection cavity is configured to communicate with an external air source, an end of the groove close to the center of the disk position is provided with an air distribution hole, and the air collection cavity Communicate with the vent hole.
  • the master disc includes a disc main body and a disc base fixedly connected, the disc position is arranged on the disc main body, and the air collection cavity is arranged on the middle of the disc base.
  • the disc main body and the disc base have an integral structure or a separate structure.
  • the center of the disk position is provided with a rotating shaft, one end of the rotating shaft is inserted into the center of the sub-disk, and the other end of the rotating shaft is inserted into the mother disk.
  • the rotating shaft is made of graphite, ceramic or quartz material.
  • the bottom of the master plate is connected to one end of a lifting rod, the lifting rod is configured to move up and down, a main air passage is opened in the middle of the lifting rod, and the main air passage is configured to communicate with an external air source, so The main air passage is communicated with the groove through an air collecting cavity and an air distribution hole in sequence.
  • the pneumatic tray also includes a lifting drive mechanism and a rotation drive mechanism.
  • One end of the rotation drive mechanism is connected to the other end of the lifting rod to drive the lifting rod to rotate.
  • the lifting drive mechanism is connected to the rotation drive mechanism.
  • the other end is connected to drive the rotation drive mechanism and the lifting rod to move up and down as a whole; or, one end of the lifting drive mechanism is connected to the other end of the lifting rod to drive the lifting rod to move up and down, and the rotation drive
  • the mechanism is connected with the other end of the lifting drive mechanism to drive the lifting drive mechanism and the lifting rod to rotate integrally.
  • the main air passage communicates with the groove through the air collection cavity.
  • the bottom of the master disk is connected with a lifting rod, the lifting rod is configured to move up and down and horizontally rotate, the middle of the lifting rod is provided with a main air passage communicating with an air source, and the main air passage is connected to the concave The slots are connected.
  • the present application provides a pneumatic tray for GaN material growth, which drives the sub-disk to rotate through airflow.
  • it can overcome the defect that the existing motor drive cannot be used at high temperatures, so that the pneumatic tray can meet high-temperature operating conditions.
  • the inert gas can be discharged in a horizontal direction or a downward sloping direction, thereby avoiding disturbing the upper part of the sub-disk
  • the overall atmosphere of the reaction gas ensures the effective mixing and reaction of the reaction gas.
  • Figure 1 is a full cross-sectional view of the pneumatic tray according to the first embodiment
  • FIG. 2 is a full cross-sectional view of the master disk according to the first embodiment from a top perspective;
  • Figure 3 is a top view of the sub-disk (four-workpiece slot) described in the first embodiment
  • FIG. 4 is a top view of the sub-disk (a workpiece slot) according to the first embodiment
  • Figure 5 is a top view of the pneumatic tray (six trays) described in the third embodiment
  • Figure 6 is a full cross-sectional view of the A-A direction shown in Figure 5;
  • Figure 7 is a front view of the pneumatic tray described in the third embodiment (the tray base is not shown);
  • Figure 8 is a full cross-sectional view of the B-B direction shown in Figure 7;
  • FIG. 9 is a schematic diagram of the structure of the master disk described in the third embodiment.
  • Figure 10 is a top view of the master disk described in the third embodiment.
  • 11 is a top view of the assembly of one of the bays of the master disc and the daughter disc in the third embodiment
  • Fig. 12 is a full cross-sectional view taken along the line C-C shown in Fig. 11;
  • Figure 13 is a top view of the pneumatic tray (five trays) described in the third embodiment
  • Figure 14 is a full cross-sectional view from the direction D-D shown in Figure 13;
  • Figure 15 is a full cross-sectional view of the fourth embodiment based on the A-A direction shown in Figure 5;
  • Fig. 16 is a full cross-sectional view of the fourth embodiment based on the direction D-D shown in Fig. 13.
  • a pneumatic tray for GaN material growth includes a sub-disk 1 and a master disk 2.
  • the sub-disk 1 and the master disk 2 can be made of graphite, ceramic or quartz materials, and the sub-disk 1 is configured
  • the master disk 2 is configured to support the daughter disk 1 and drive the daughter disk 1 to rotate through an inert gas.
  • the upper surface of the master disk 2 is provided with a bay 211 for placing the sub-disk 1, and the bay 211 is provided with a spiral groove 212 extending from a position close to the center of the bay 211 to an edge position of the bay 211.
  • the groove One end of 212 close to the center of the tray 211 is connected to the air source, and the other end of the groove 212 is connected to the outside.
  • the sub-disk 1 is placed on the tray 211, and the inert gas is enclosed between the groove 212 and the sub-disk 1. Circulate in the rotating air channel.
  • a disk position 211 is provided on the master disk 2, and the center of the disk position 211 is located at the center of the master disk 2.
  • the outer peripheral edge of the sub disk 1 extends downward to form a guide boss 11, and the guide boss 11 is located on the disk.
  • On the outer side of the side wall of the position 211 there is a gap between the inner side wall of the guide boss 11 and the side wall of the disk position 211, and the gap forms the exhaust port 3 with the opening facing downward.
  • One end of the location is connected.
  • a rotating shaft 4 is arranged in the center of the disk position 211, and the rotating shaft 4 is made of graphite, ceramic or quartz material. One end of the rotating shaft 4 is inserted into the center of the sub disk 1, and the other end of the rotating shaft 4 is inserted into the center of the bay 211 of the mother disk 2. By providing the rotating shaft 4, the rotation center of the sub-disk 1 can be effectively fixed, and the reliability of the sub-disk 1 in the working process is improved.
  • the master disk 2 includes a disk main body 21 and a disk base 22 that are fixedly connected.
  • the disk main body 21 and the disk base 22 are integrally formed, and the disk position 211 is provided on the disk main body 21.
  • the disk base 22 is provided with an air collecting cavity 221 communicating with an air source, and an end of the groove 212 close to the center of the disk position 211 is provided with an air distribution hole 23, and the air collecting cavity 221 is in communication with the air distribution hole 23.
  • the upper surface of the sub-disk 1 is provided with four workpiece grooves 12 for placing substrates, as shown in FIG. 3.
  • the number of workpiece grooves 12 may be 1 or 2 or 3 or 5 or 6 or 7 or 8 or 9 or 10. The state where the number of workpiece grooves 12 is one is shown in FIG. 4.
  • an external gas source passes the inert gas into the groove 212 through the gas collecting cavity 221 and the gas distribution hole 23, and the inert gas flows in the channel formed by the groove 212 and the sub-disk 1 until the groove 212 is located At one end of the edge position, the inert gas is finally discharged downward along the exhaust port 3.
  • the sub-disk 1 and the mother disk 2 are air-floated and isolated, and the spiral directional airflow drives the sub-disk 1 to rotate. This design drives the sub-disk 1 to rotate through the airflow.
  • the pneumatic tray can meet the working conditions of high temperature greater than 800°C and meet the requirements of the HVPE process.
  • the groove 212 communicates with the outside, so that the inert gas can be discharged in a horizontal direction or a downward oblique direction, so as to avoid disturbing the overall atmosphere of the reaction gas above the sub-disk 1 and ensure the effective mixing and reaction of the reaction gas;
  • the pneumatic tray can also control the speed of the tray in real time by controlling the flow of inert gas, so as to adapt to different product process requirements and improve the quality of material growth.
  • the master disk 2 also includes a lifting rod.
  • the bottom of the master disk 2 is connected to the lifting rod.
  • the lifting rod is made of graphite, ceramic or quartz.
  • the middle of the lifting rod is provided with a main air passage communicating with the air source.
  • the channel communicates with the groove 212 through the gas collecting cavity 221 and the gas distribution hole 23 in sequence.
  • the pneumatic tray also includes a lifting drive mechanism, which is connected with the lifting rod to drive the lifting rod to move up and down.
  • a disk position is arranged on the master disk, and the center of the disk position is deviated from the center of the master disk, that is, the disk position and the master disk are arranged eccentrically.
  • the outer peripheral edge of the sub-disk extends downward to form a guide boss, the guide boss is located on the outer side of the side wall of the disk position, and an air storage cavity is provided on the master disk around the outer circumference of the disk position, so The side of the air storage cavity away from the center of the master disk penetrates through the side wall of the master disk to form an edge gap, and the end of the groove 212 away from the center of the disk position 21 communicates with the air storage cavity and passes through the air storage cavity.
  • the edge gap is connected to the outside world.
  • the inert gas discharged downward from the gap between the inner side wall of the guide boss and the outer side wall of the tray can quickly enter the gas storage cavity and further flow to the place.
  • the edge notch realizes horizontal or oblique downward discharge, away from the reaction gas above the sub-disk, so as to avoid affecting the reaction gas atmosphere and improve the reaction quality of the reaction gas.
  • a disk gap is provided between the outer peripheral side wall of the sub disk and the inner side wall of the master disk.
  • the width of the disk gap is smaller than the width of the air storage cavity.
  • the inert gas mainly tends to flow in the gas storage cavity, rather than a large amount of upward and outward discharge from the disc gap, to ensure the overall atmosphere of the reaction gas; on the other hand, a small amount of inert gas can be left in the disc gap to prevent The reaction gas reacts in the gap between the sub-disk and the mother disk to form a crystal, thereby preventing the sub-disk and the mother disk from being connected as a whole and becoming stuck.
  • the disc gap can be selected according to the thickness specifications of the GaN single crystal product, and the distance of the disc gap is preferably equal to 1.2 to 2 times the thickness of the GaN single crystal product.
  • an exhaust channel is provided between the air storage cavity and the side wall of the master disk, the number of exhaust channels is four, and two exhaust channels are respectively provided on both sides of the edge gap .
  • the pneumatic tray also includes a lifting drive mechanism and a rotation drive mechanism.
  • One end of the rotation drive mechanism is connected to the other end of the lifting rod to drive the lifting rod to rotate.
  • the lifting drive mechanism is connected to the other end of the rotation drive mechanism. Connected to drive the rotating drive mechanism and the lifting rod to move up and down as a whole.
  • the lifting and rotation of the master disk can be realized, so as to adjust the distance between the pneumatic tray and the reaction gas nozzle above, thereby controlling the growth process of GaN material, which can effectively solve the growth problem. Uniformity and growth rate issues.
  • one end of the lifting driving mechanism is connected to the other end of the lifting rod to drive the lifting rod to move up and down
  • the rotation driving mechanism is connected to the other end of the lifting driving mechanism to drive The lifting driving mechanism and the lifting rod rotate integrally.
  • Six bays 211 are provided on the master disk 2, and the six bays 211 are distributed at equal intervals along the circumferential direction of the master disk 2, as shown in FIG. 5. In other embodiments, the number of bays 211 may also be two or three or four or five or seven or eight or nine or ten or more. The state where five bays 211 are set on the master disk 2 is shown in FIG. 13 and FIG. 14.
  • the outer peripheral edge of the sub disk 1 extends downward to form a guide boss 11, which is located on the outside of the side wall of the disk position 211, and the master disk 2 surrounds the disk.
  • An air storage cavity 24 is provided on the outer periphery of the position 211, and the side of the air storage cavity 24 away from the center of the master disk 2 penetrates the side wall of the master disk 2 to form an edge gap 25.
  • the end of the groove 212 provided on the disk position 21 away from the center of the disk position 21 communicates with the air storage cavity 24, and communicates with the outside through the edge gap provided on the air storage cavity.
  • the above design enables the inert gas discharged downward from the gap between the inner side wall of the guide boss 11 and the outer side wall of the tray 211 to quickly enter the gas storage chamber 24 and further flow to the edge gap 25, realizing the horizontal or inclined inert gas
  • the outward discharge in the downward direction is far away from the reaction gas above the sub-disk 1, so as to avoid affecting the reaction gas atmosphere and improve the reaction quality of the reaction gas.
  • a disk gap 5 is provided between the outer peripheral side wall of the sub disk 1 and the inner side wall of the master disk 2.
  • the width of the disk gap 5 is smaller than the width of the air storage cavity 24.
  • it can make the inert gas mainly tend to flow in the gas storage cavity 24, instead of being discharged from the disc gap 5 upwards and outwards in a large amount, so as to ensure the overall atmosphere of the reaction gas; on the other hand, it can make a small amount of inert gas remain in the disc gap 5,
  • the reaction gas is prevented from reacting at the gap between the sub-disk 1 and the mother disk 2 to form crystals, thereby preventing the sub-disk 1 and the mother disk 2 from being integrated and jammed.
  • the disc gap 5 can be selected according to the thickness specifications of the GaN single crystal product, and the distance of the disc gap 5 is preferably equal to 1.2 to 2 times the thickness of the GaN single crystal product.
  • An exhaust duct 26 is provided between the air storage chamber 24 and the side wall of the master disk 2 in this embodiment.
  • Each group of air storage chambers 24 is provided with four exhaust ducts 26, and two exhaust ducts are provided on both sides of the edge gap 25. Road 26.
  • the master disk 2 includes a disk main body 21 and a disk base 22 that are fixedly connected.
  • the disk main body 21 and the disk base 22 are formed as separate parts.
  • the bottom of the master disk 2 is connected to one end of the lifting rod, and the middle of the lifting rod is provided with a main air passage communicating with an air source, and the main air passage communicates with the groove 212 through the air collecting cavity 221 and the air distribution hole 23 .
  • the pneumatic tray includes a lifting drive mechanism and a rotation drive mechanism. One end of the rotation drive mechanism is connected with the other end of the lifting rod to drive the lifting rod to rotate. The lifting drive mechanism is connected with the other end of the rotation drive mechanism to drive the rotation drive mechanism. And the lifting rod moves up and down as a whole.
  • the lifting and rotation of the master disk 2 can be realized, so as to adjust the distance between the pneumatic tray and the upper reactive gas nozzle, and then control the growth process of GaN material, which can effectively solve the growth uniformity and The problem of growth rate.
  • one end of the lifting driving mechanism is connected to the other end of the lifting rod to drive the lifting rod to move up and down
  • the rotation driving mechanism is connected to the other end of the lifting driving mechanism to drive the lifting driving mechanism and the lifting rod to rotate integrally.
  • the master disc 2 includes a disc main body 21 and a disc base 22 that are fixedly connected, and the disc main body 21 and the disc base 22 are integrally formed.
  • five disk positions 211 are provided on the sub disk 1, and the master disk 2 includes a disk main body 21 and a disk base 22 that are fixedly connected.
  • the disk main body 21 and the disk base 22 are integrally formed.
  • the specific structure is shown in FIG. 13 And 16 are shown.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un plateau pneumatique pour la croissance de matériau de GaN, comprenant un sous-plateau (1) et un plateau principal (2). La surface supérieure du plateau principal (2) est pourvue d'une position de plateau (211) pour placer le sous-plateau (1). La position de plateau (211) est pourvue d'une rainure en spirale (212) s'étendant de la position proche du centre de la position de plateau (211) à la position de bord de la position de plateau (211). Une extrémité de la rainure (212) proche du centre de la position de plateau (211) est en communication avec une source d'air, et l'autre extrémité de la rainure (212) est en communication avec l'extérieur au moyen de la paroi latérale du plateau principal (2).
PCT/CN2019/125531 2019-12-16 2019-12-16 Plateau pneumatique pour la croissance de matériau de gan WO2021119900A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/CN2019/125531 WO2021119900A1 (fr) 2019-12-16 2019-12-16 Plateau pneumatique pour la croissance de matériau de gan

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Application Number Priority Date Filing Date Title
PCT/CN2019/125531 WO2021119900A1 (fr) 2019-12-16 2019-12-16 Plateau pneumatique pour la croissance de matériau de gan

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WO2021119900A1 true WO2021119900A1 (fr) 2021-06-24

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020090454A1 (en) * 2001-01-08 2002-07-11 Michael Paisley Gas-driven rotation apparatus and method for forming silicon carbide layers
CN1522314A (zh) * 2002-02-27 2004-08-18 ס�ѵ�����ҵ��ʽ���� 制造半导体或液晶的装置
US20040198153A1 (en) * 1995-09-01 2004-10-07 Halpin Michael W. Wafer support system
CN1647244A (zh) * 2002-04-08 2005-07-27 克里公司 气体驱动的行星旋转设备及用于形成碳化硅层的方法
CN1777707A (zh) * 2004-06-09 2006-05-24 Etc外延技术中心有限公司 用于处理装置的支承系统
US20070062455A1 (en) * 2005-09-12 2007-03-22 Saxler Adam W Gas driven rotation apparatus and method for forming crystalline layers
KR20110077460A (ko) * 2009-12-30 2011-07-07 엘아이지에이디피 주식회사 화학기상 증착장치
CN104969332A (zh) * 2013-02-27 2015-10-07 东洋炭素株式会社 基座
CN105386121A (zh) * 2015-10-22 2016-03-09 中国电子科技集团公司第四十八研究所 用于碳化硅外延生长的行星旋转装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040198153A1 (en) * 1995-09-01 2004-10-07 Halpin Michael W. Wafer support system
US20020090454A1 (en) * 2001-01-08 2002-07-11 Michael Paisley Gas-driven rotation apparatus and method for forming silicon carbide layers
CN1522314A (zh) * 2002-02-27 2004-08-18 ס�ѵ�����ҵ��ʽ���� 制造半导体或液晶的装置
CN1647244A (zh) * 2002-04-08 2005-07-27 克里公司 气体驱动的行星旋转设备及用于形成碳化硅层的方法
CN1777707A (zh) * 2004-06-09 2006-05-24 Etc外延技术中心有限公司 用于处理装置的支承系统
US20070062455A1 (en) * 2005-09-12 2007-03-22 Saxler Adam W Gas driven rotation apparatus and method for forming crystalline layers
KR20110077460A (ko) * 2009-12-30 2011-07-07 엘아이지에이디피 주식회사 화학기상 증착장치
CN104969332A (zh) * 2013-02-27 2015-10-07 东洋炭素株式会社 基座
CN105386121A (zh) * 2015-10-22 2016-03-09 中国电子科技集团公司第四十八研究所 用于碳化硅外延生长的行星旋转装置

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