WO2021114910A1 - Stripping transfer method for large-area metal oxide nanoarray - Google Patents

Stripping transfer method for large-area metal oxide nanoarray Download PDF

Info

Publication number
WO2021114910A1
WO2021114910A1 PCT/CN2020/123985 CN2020123985W WO2021114910A1 WO 2021114910 A1 WO2021114910 A1 WO 2021114910A1 CN 2020123985 W CN2020123985 W CN 2020123985W WO 2021114910 A1 WO2021114910 A1 WO 2021114910A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal oxide
nanoarray
substrate
array
base material
Prior art date
Application number
PCT/CN2020/123985
Other languages
French (fr)
Chinese (zh)
Inventor
杨庭强
梁维源
范涛健
张家宜
康建龙
曾永宏
孟思
张斌
Original Assignee
深圳瀚光科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 深圳瀚光科技有限公司 filed Critical 深圳瀚光科技有限公司
Publication of WO2021114910A1 publication Critical patent/WO2021114910A1/en

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82BNANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009Forming specific nanostructures
    • B82B3/0014Array or network of similar nanostructural elements
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00Nanotechnology for materials or surface science, e.g. nanocomposites
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures

Definitions

  • the present invention claims the priority of the prior application of the application number 201911288794.5 filed on December 12, 2019 under the title of "A Method for Exfoliating and Transferring Large Area Metal Oxide Nanoarrays", and the content of the foregoing prior application is introduced by way of introduction. Incorporated into this text.
  • the invention relates to a stripping transfer method of a large-area metal oxide nano-array, belonging to the field of manufacturing nano-photoelectric devices.
  • Nanostructures such as metal oxide nanorods and nanosheets are arranged vertically, uniformly, and orderly on the base material to form metal oxide nanoarrays. They exhibit excellent performance in various fields such as solar cells, gas sensors, and photocatalysis. .
  • the preparation process of metal oxide nanoarrays on various substrate materials has been quite mature, but the lift-off transfer process of large-area metal oxide nanoarrays still needs to be developed and improved.
  • the simple and rapid stripping transfer of large-area metal oxide nanoarrays is beneficial to simplify the manufacturing process of optoelectronic devices and improve the integration and stability of the devices.
  • the present invention aims to provide a loose operating environment that can make the metal oxide nanoarray (such as the above-mentioned ZnO nanorod array) spontaneously separate from the base material, thereby achieving simple and rapid peeling And the method of transferring metal oxide nano-arrays.
  • the method of the present invention can realize that the metal oxide nano array prepared by the hydrothermal method is separated from the base material in a large area after annealing, so that the large area metal oxide nano array is simply and quickly transferred to the target substrate. No organic resin encapsulation was used in the transfer process, and no other equipment was used.
  • the exfoliation transfer method of the present invention is simpler than any reported method, and can transfer the metal oxide nanoarray to any target substrate, even a curved substrate, so that it is more suitable for large-scale and low-cost manufacturing of nanodevices.
  • the area of the metal oxide nanoarray that can be peeled and transferred is as high as 1 cm 2 .
  • the present invention provides a method for exfoliating and transferring a large-area metal oxide nanoarray, the method including the following steps:
  • the metal oxide nanoarray is peeled off into an organic binder or sol, and a target substrate is selected to pick up the separated metal oxide nanoarray and attach it to the surface of the target substrate.
  • Heat treatment is performed at a temperature of ⁇ 500° C. in an air atmosphere to remove residual organic matter, so as to realize the transfer of the metal oxide nano-array.
  • the hydrothermal precursor solution is prepared by mixing a nitrate solution of the corresponding metal of the metal oxide with an amine solution; wherein the amine solution includes but is not limited to cyclohexamethylenetetramine (HMTA) solution and Urea solution; wherein the substrate material includes but not limited to glass substrate and Si substrate, preferably FTO glass substrate or Si substrate; wherein the organic binder includes but not limited to Triton and terpineol, the sol is The metal oxide corresponds to a metal acetate sol.
  • HMTA cyclohexamethylenetetramine
  • the feature of the present invention is that the metal oxide nanoarray prepared by the hydrothermal method can be spontaneously separated from the substrate material in a large area, and can be easily peeled off into the organic binder or sol after heat treatment, and the target substrate is used for fishing to achieve a large area. Metal oxide nano-arrays are easily and quickly transferred.
  • the advantage of the patent of the present invention is that the present invention can realize the spontaneous separation of the large-area metal oxide nanoarray from the substrate material without the aid of organic resin and special equipment, so that it can be applied to any target substrate. Even transfer on curved substrates. This method is simpler than previously reported methods, making it more suitable for the preparation of large-scale, low-cost nanodevices.
  • FIG. 1 shows the XRD pattern of the ZnO seed layer prepared on the surface of the common glass substrate of Example 1.
  • Example 2 shows the XRD pattern of the ZnO nanorod array grown on the surface of the common glass substrate of Example 1.
  • Fig. 3 shows a photograph of the ZnO nanorod array of Example 1 being peeled off from a common glass substrate.
  • FIG. 4 shows the FESEM image of the ZnO nanorod array transferred to the surface of the curved ceramic tube of Example 1.
  • a layer of ZnO film was prepared by spin coating and annealing on the surface of a common glass substrate with an area of 4 cm 2 and annealed 5 times (Figure 1 shows the XRD pattern of the ZnO film).
  • the ordinary glass substrate spin-coated with the ZnO film was immersed in the hydrothermal precursor solution and kept at 90°C for 4 hours. After the hydrothermal reaction solution is naturally cooled to room temperature, the ordinary glass substrate is taken out, washed with deionized water, and dried.
  • the ordinary glass substrate on which the ZnO nanorod array was grown was annealed at 400°C for 30 minutes. After the temperature dropped to room temperature, it was found that the area of the ZnO nanorod array separated from the ordinary glass substrate increased significantly, up to 1cm 2 ( Figure 3) Shown).
  • the separated ZnO nanorod array is peeled from the glass substrate into the Triton adhesive.
  • the ZnO nanorod array can be bent freely in the Triton adhesive and exhibits good flexibility.
  • a curved ceramic tube is used to retrieve the ZnO nanorod array, and the ZnO nanorod array is spontaneously attached to the curved ceramic tube.
  • the curved ceramic tube is heat-treated at 400°C to realize the transfer of the large-area ZnO nanorod array to the curved ceramic tube.
  • the FESEM image showed that the structure of the ZnO nanorod array transferred to the curved ceramic tube was not damaged.
  • a layer of CuO film was prepared by spin coating-annealing method on the surface of FTO glass substrate with an area of 4 cm 2 by spin coating and annealing 5 times. Prepare 0.2 mol/L Cu(NO 3 ) 2 and 80 ml of HMTA aqueous solution, and mix these two solutions to obtain a hydrothermal precursor solution.
  • the FTO glass substrate spin-coated with CuO film was immersed in the hydrothermal precursor solution and kept at 90°C for 4 hours. After the hydrothermal reaction solution is naturally cooled to room temperature, the FTO glass substrate is taken out, washed with deionized water, and dried.
  • Figures 5 and 6 are the XRD patterns and FESEM images of the CuO nanoarray, respectively.
  • the FTO glass substrate on which the CuO nano-array is grown is annealed at 400° C. for 30 minutes. After the temperature drops to room temperature, it is found that the area of the CuO nano-array separated from the FTO glass substrate is significantly increased, up to 1 cm 2 .
  • the separated CuO nanoarray is peeled from the FTO glass substrate into the terpineol binder, and the CuO nanoarray can be bent freely in the terpineol binder, showing good flexibility.
  • a curved ceramic tube is used to pick up the CuO nano-array, and the CuO nano-array is spontaneously attached to the curved ceramic tube. Finally, the curved ceramic tube is heat-treated at 400°C to realize the transfer of the large-area CuO nano-array to the curved ceramic tube.
  • a layer of NiO film was prepared by spin coating-annealing method on the surface of Si substrate with an area of 4 cm 2 by spin coating and annealing 3 times. Prepare 0.15 mol/L Ni(NO 3 ) 2 and 90 ml of HMTA aqueous solution, and mix these two solutions to obtain a hydrothermal precursor solution.
  • the Si substrate spin-coated with NiO film was immersed in the hydrothermal precursor solution and kept at 90°C for 4 hours. After the hydrothermal reaction solution is naturally cooled to room temperature, the Si substrate is taken out, washed with deionized water, and dried.
  • NiO nanoarray By visually observing the dried Si substrate, it was found that part of the NiO nanoarray was separated from the Si substrate.
  • the phase and morphology of the NiO nanoarray can be known through XRD patterns and FESEM images.
  • the Si substrate on which the NiO nanoarray was grown was annealed at 500°C for 10 minutes. After the temperature dropped to room temperature, it was found that the area of the NiO nanoarray separated from the Si substrate increased significantly, reaching 1cm 2 .
  • the separated NiO nano-array is peeled from the Si substrate into the nickel acetate sol.
  • the NiO nano-array can be bent freely in the nickel acetate sol and exhibits good flexibility. Then, the NiO nano-array is picked up by the flexible polytetrafluoroethylene substrate with interdigital electrodes, and the NiO nano-array is spontaneously attached to the flexible polytetrafluoroethylene substrate.
  • the PTFE flexible substrate is heat-treated at 350°C to realize the transfer of the large-area NiO nano-array to the PTFE flexible substrate.
  • the FESEM image showed that the structure of the NiO nanoarray transferred to the flexible PTFE substrate was not damaged.
  • the spin coating-annealing method was used to spin-coat and anneal 3 times on the surface of a Si substrate with an area of 4 cm 2 to prepare a Co 3 O 4 film.
  • the Si substrate spin-coated with the Co 3 O 4 film was immersed in the hydrothermal precursor solution and kept at 95° C. for 6 hours. After the hydrothermal reaction solution is naturally cooled to room temperature, the Si substrate is taken out, washed with deionized water, and dried.
  • phase and morphology of the Co 3 O 4 nano-array can be known through XRD patterns and FESEM images.
  • the Si substrate on which the Co 3 O 4 nano-array was grown was annealed at 500° C. for 10 minutes. After the temperature dropped to room temperature, it was found that the area of the Co 3 O 4 nano-array separated from the Si substrate was significantly increased, reaching 1 cm 2 .
  • the separated Co 3 O 4 nano-array is peeled from the Si substrate into the cobalt acetate sol.
  • the Co 3 O 4 nano-array can be bent freely in the cobalt acetate sol and exhibits good flexibility.
  • a flexible polytetrafluoroethylene substrate with interdigital electrodes is used to harvest the Co 3 O 4 nano-array, and the Co 3 O 4 nano-array is spontaneously attached to the flexible polytetrafluoroethylene substrate.
  • the flexible polytetrafluoroethylene substrate is heat-treated at 300°C to realize the transfer of the large-area Co 3 O 4 nano-array to the flexible polytetrafluoroethylene substrate.
  • the FESEM image showed that the structure of the Co 3 O 4 nano-array transferred to the flexible polytetrafluoroethylene substrate was not damaged.
  • the beneficial effect of the present invention is that the present invention can realize the simple and rapid peeling and transfer of metal oxide nano-arrays with an area of 1 cm 2 without the aid of organic resins and special instruments and equipment, and can be transferred to curved substrates and flexible substrates. on.
  • This method is simpler than previously reported methods, making it more suitable for the preparation of large-scale, low-cost nanodevices, and is conducive to expanding the assembly form of nanodevices.

Abstract

A stripping transfer method for a large-area metal oxide nanoarray, comprising: (1) selecting a substrate material having a lattice constant mismatch rate greater than 5% and a thermal expansion coefficient difference greater than 5*10 -6K with respect to those of the metal oxide; (2) pre-preparing a metal oxide seed layer film on the surface of the substrate material, wherein the annealing temperature is controlled at 200-500°C; (3) immersing into the hydrothermal precursor solution the substrate material having the metal oxide seed layer film prepared on the surface thereof to perform hydrothermal reaction to grow a layer of metal oxide nanoarray on the surface; (4) performing heat treatment on the prepared metal oxide nanoarray at 200-500°C to achieve separation from the substrate material; and (5) stripping the metal oxide nanoarray into an organic binder or sol, selecting a target substrate, taking out the separated metal oxide nanoarray and attaching same to the surface of the target substrate, and then, performing heat treatment at 200-500°C in an air atmosphere to remove residual organic matters, so as to achieve the transfer of the metal oxide nanoarray.

Description

一种大面积金属氧化物纳米阵列的剥离转移方法Stripping transfer method of large-area metal oxide nano-array
本发明要求2019年12月12日递交的发明名称为“一种大面积金属氧化物纳米阵列的剥离转移方法”的申请号201911288794.5的在先申请优先权,上述在先申请的内容以引入的方式并入本文本中。The present invention claims the priority of the prior application of the application number 201911288794.5 filed on December 12, 2019 under the title of "A Method for Exfoliating and Transferring Large Area Metal Oxide Nanoarrays", and the content of the foregoing prior application is introduced by way of introduction. Incorporated into this text.
技术领域Technical field
本发明涉及一种大面积金属氧化物纳米阵列的剥离转移方法,属于纳米光电器件的制作领域。The invention relates to a stripping transfer method of a large-area metal oxide nano-array, belonging to the field of manufacturing nano-photoelectric devices.
背景技术Background technique
金属氧化物的纳米棒、纳米片等纳米结构在基底材料上垂直、均匀、有序地排列,形成金属氧化物纳米阵列,它们在太阳能电池、气体传感器、光催化等各个领域表现出优异的性能。金属氧化物纳米阵列在各种基底材料上的制备工艺已经相当成熟,但是大面积金属氧化物纳米阵列的剥离转移工艺仍然有待开发和改进。实现大面积金属氧化物纳米阵列的简单且快速的剥离转移有利于简化光电器件的制作工艺,提高器件的集成度和稳定性。Nanostructures such as metal oxide nanorods and nanosheets are arranged vertically, uniformly, and orderly on the base material to form metal oxide nanoarrays. They exhibit excellent performance in various fields such as solar cells, gas sensors, and photocatalysis. . The preparation process of metal oxide nanoarrays on various substrate materials has been quite mature, but the lift-off transfer process of large-area metal oxide nanoarrays still needs to be developed and improved. The simple and rapid stripping transfer of large-area metal oxide nanoarrays is beneficial to simplify the manufacturing process of optoelectronic devices and improve the integration and stability of the devices.
Shujie Wang等(RSC Advances,第6卷(2016年),第64332~64337页)报道了利用纳米压印辅助垂直转移的方法对ZnO纳米棒阵列进行转移。其通过升高温度将聚甲基丙烯酸甲酯(PMMA)有机物填充至ZnO纳米棒阵列间隙中,同时ZnO纳米棒阵列的顶端被嵌入银浆电极中,从而使ZnO纳米棒阵列、PMMA和银浆形成整体。然后采用纳米压印平台,对ZnO纳米棒施加应力,实现ZnO纳米棒阵列与生长基底的分离,从而剥离ZnO纳米棒阵列,并将其转移至目标基底上。虽然该方法能实现ZnO纳米棒阵列向各种基底的转移,但是转移的过程相对复杂,需借助特殊仪器,并可能对ZnO纳米棒造成破坏。Shujie Wang et al. (RSC Advances, Vol. 6 (2016), pp. 64332~64337) reported the transfer of ZnO nanorod arrays using nanoimprint assisted vertical transfer. It fills the polymethyl methacrylate (PMMA) organic matter into the gaps of the ZnO nanorod array by increasing the temperature, while the top of the ZnO nanorod array is embedded in the silver paste electrode, thereby making the ZnO nanorod array, PMMA and silver paste Form a whole. Then, a nanoimprint platform is used to apply stress to the ZnO nanorods to realize the separation of the ZnO nanorod array from the growth substrate, so as to peel off the ZnO nanorod array and transfer it to the target substrate. Although this method can realize the transfer of ZnO nanorod arrays to various substrates, the transfer process is relatively complicated, requires special equipment, and may cause damage to the ZnO nanorods.
发明内容Summary of the invention
针对现有技术存在的问题和不足,本发明旨在提供一种对操作环境要求宽松,能使金属氧化物纳米阵列(例如上述ZnO纳米棒阵列)自发从基底材料分离,从而实现简单、快速剥离和转移金属氧化物纳米阵列的方法。本发明的方法能够实现水热法制备的金属氧化物纳米阵列在退火后大面积地与基底材料分离,从而使得大面积金属氧化物纳米阵列简单、快速转移至目标基底。转移过程中没有用到有机树脂的封装,也没有借助其它仪器设备。因此,本发明的剥离转移方法比报道过的任何方法都要简单,可以将金属氧化物纳米阵列转移至任意目标基底,甚至曲面基底上,从而更适合于大规模、低成本地制造纳米器件。根据本发明的方法,可剥离转移的金属氧化物纳米阵列的面积高达1cm 2In view of the problems and deficiencies in the prior art, the present invention aims to provide a loose operating environment that can make the metal oxide nanoarray (such as the above-mentioned ZnO nanorod array) spontaneously separate from the base material, thereby achieving simple and rapid peeling And the method of transferring metal oxide nano-arrays. The method of the present invention can realize that the metal oxide nano array prepared by the hydrothermal method is separated from the base material in a large area after annealing, so that the large area metal oxide nano array is simply and quickly transferred to the target substrate. No organic resin encapsulation was used in the transfer process, and no other equipment was used. Therefore, the exfoliation transfer method of the present invention is simpler than any reported method, and can transfer the metal oxide nanoarray to any target substrate, even a curved substrate, so that it is more suitable for large-scale and low-cost manufacturing of nanodevices. According to the method of the present invention, the area of the metal oxide nanoarray that can be peeled and transferred is as high as 1 cm 2 .
具体地,本发明提供一种大面积金属氧化物纳米阵列的剥离转移方法,所述方法包括以下步骤:Specifically, the present invention provides a method for exfoliating and transferring a large-area metal oxide nanoarray, the method including the following steps:
(1)选取与金属氧化物晶格常数失配率大于5%且热膨胀系数差异大于5×10 -6K的基底材料; (1) Select a base material with a lattice constant mismatch rate greater than 5% and a thermal expansion coefficient difference greater than 5×10 -6 K with the metal oxide;
(2)在所述基底材料的表面预先制备金属氧化物种子层薄膜,在该过程中将退火温度控制在200~500℃;(2) Pre-preparing a metal oxide seed layer film on the surface of the base material, and controlling the annealing temperature at 200-500°C in the process;
(3)将所述表面预制有金属氧化物种子层薄膜的基底材料浸入水热前驱体溶液中进行水热反应,从而在所述基底材料的表面生长一层金属氧化物纳米阵列;(3) Immerse the base material with a metal oxide seed layer film prefabricated on the surface into a hydrothermal precursor solution to conduct a hydrothermal reaction, thereby growing a layer of metal oxide nanoarray on the surface of the base material;
(4)将所述水热制备的金属氧化物纳米阵列在200~500℃下热处理,实现所述金属氧化物纳米阵列与所述基底材料的分离;和(4) Heat treatment of the metal oxide nanoarray prepared by hydrothermal treatment at 200-500°C to realize the separation of the metal oxide nanoarray from the base material; and
(5)将所述金属氧化物纳米阵列剥离至有机粘结剂或溶胶中,选取目标基底捞取所述分离的金属氧化物纳米阵列,使其贴附在所述目标基底的表面,然后在200~500℃温度下、空气气氛中进行热处理,除去残余的有机物,从而实现所述金属氧化物纳米阵列的转移。(5) The metal oxide nanoarray is peeled off into an organic binder or sol, and a target substrate is selected to pick up the separated metal oxide nanoarray and attach it to the surface of the target substrate. Heat treatment is performed at a temperature of ~500° C. in an air atmosphere to remove residual organic matter, so as to realize the transfer of the metal oxide nano-array.
其中,优选地,可根据本发明的方法大面积剥离转移的金属氧化物纳米阵列包括ZnO纳米阵列,CuO纳米阵列,NiO纳米阵列和Co 3O 4纳米阵列等。其中所述水热前驱体溶液是由所述金属氧化物对应金属的硝酸盐溶液与胺溶液混合制得的;其中所述胺溶液包括但不限于环六亚甲基四胺(HMTA)溶液和尿素溶液;其中所述基底材料包括但不限于玻璃基底和Si基底,优选为FTO玻璃基底或Si基底;其中所述有机粘结剂包括但不限于曲拉通和松油醇,所述溶胶为所述金属氧化物对应金属的醋酸盐溶胶。 Among them, preferably, metal oxide nanoarrays that can be stripped and transferred in a large area according to the method of the present invention include ZnO nanoarrays, CuO nanoarrays, NiO nanoarrays, Co 3 O 4 nanoarrays, and the like. Wherein the hydrothermal precursor solution is prepared by mixing a nitrate solution of the corresponding metal of the metal oxide with an amine solution; wherein the amine solution includes but is not limited to cyclohexamethylenetetramine (HMTA) solution and Urea solution; wherein the substrate material includes but not limited to glass substrate and Si substrate, preferably FTO glass substrate or Si substrate; wherein the organic binder includes but not limited to Triton and terpineol, the sol is The metal oxide corresponds to a metal acetate sol.
本发明的特点为水热法制备的金属氧化物纳米阵列能大面积自发地与基底材料分离,经过热处理后可以轻易将其剥离至有机粘结剂或溶胶中,采用目标基底捞取,实现大面积金属氧化物纳米阵列简单且快速的转移。The feature of the present invention is that the metal oxide nanoarray prepared by the hydrothermal method can be spontaneously separated from the substrate material in a large area, and can be easily peeled off into the organic binder or sol after heat treatment, and the target substrate is used for fishing to achieve a large area. Metal oxide nano-arrays are easily and quickly transferred.
与现有技术相比本发明专利的优点在于:本发明可以在没有有机树脂以及特殊仪器设备的辅助下,实现大面积金属氧化物纳米阵列自发与基底材料分离,从而可向任意的目标基底,甚至曲面基底上转移。此方法比以往报道的方法都要简单,使得它更适用于大规模、低成本纳米器件的制备。Compared with the prior art, the advantage of the patent of the present invention is that the present invention can realize the spontaneous separation of the large-area metal oxide nanoarray from the substrate material without the aid of organic resin and special equipment, so that it can be applied to any target substrate. Even transfer on curved substrates. This method is simpler than previously reported methods, making it more suitable for the preparation of large-scale, low-cost nanodevices.
附图说明Description of the drawings
图1示出实施例1的普通玻璃基底表面制备的ZnO种子层的XRD图谱。FIG. 1 shows the XRD pattern of the ZnO seed layer prepared on the surface of the common glass substrate of Example 1.
图2示出实施例1的普通玻璃基底表面生长的ZnO纳米棒阵列的XRD图谱。2 shows the XRD pattern of the ZnO nanorod array grown on the surface of the common glass substrate of Example 1.
图3示出实施例1的ZnO纳米棒阵列从普通玻璃基底剥离的照片。Fig. 3 shows a photograph of the ZnO nanorod array of Example 1 being peeled off from a common glass substrate.
图4示出实施例1的转移至曲面陶瓷管表面的ZnO纳米棒阵列的FESEM图像。FIG. 4 shows the FESEM image of the ZnO nanorod array transferred to the surface of the curved ceramic tube of Example 1. FIG.
图5示出实施例2的FTO玻璃基底表面生长的CuO纳米阵列的XRD图谱。5 shows the XRD pattern of the CuO nanoarray grown on the surface of the FTO glass substrate of Example 2.
图6示出实施例2的FTO玻璃基底表面生长的CuO纳米阵列的FESEM图像。6 shows the FESEM image of the CuO nano-array grown on the surface of the FTO glass substrate of Example 2.
具体实施方式Detailed ways
下面将结合本发明的实施例,对本发明的技术方案进行清楚、完整地描述。显而易见的是,所描述的实施例仅仅是本发明实施方式的举例,本发明的范围并不限于所述实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都将落入本发明的保护范围。The technical solutions of the present invention will be clearly and completely described below in conjunction with the embodiments of the present invention. It is obvious that the described embodiments are merely examples of the implementation of the present invention, and the scope of the present invention is not limited to the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work will fall within the protection scope of the present invention.
实施例1 ZnO纳米棒阵列的剥离转移Example 1 Exfoliation and transfer of ZnO nanorod array
采用旋涂-退火法在面积为4cm 2的普通玻璃基底表面旋涂、退火5次,制备一层ZnO薄膜(图1为ZnO薄膜的XRD图谱)。配制0.2mol/L的Zn(NO 3) 2和HMTA水溶液各80ml,将这两种溶液混合,得到水热前驱体溶液。将旋涂有ZnO薄膜的普通玻璃基底浸入水热前驱体溶液中,在90℃下保温4小时。待水热反应溶液自然冷却至室温后,取出普通玻璃基底,采用去离子水对其清洗后烘干。 A layer of ZnO film was prepared by spin coating and annealing on the surface of a common glass substrate with an area of 4 cm 2 and annealed 5 times (Figure 1 shows the XRD pattern of the ZnO film). Prepare 0.2 mol/L Zn(NO 3 ) 2 and 80 ml of HMTA aqueous solution, and mix these two solutions to obtain a hydrothermal precursor solution. The ordinary glass substrate spin-coated with the ZnO film was immersed in the hydrothermal precursor solution and kept at 90°C for 4 hours. After the hydrothermal reaction solution is naturally cooled to room temperature, the ordinary glass substrate is taken out, washed with deionized water, and dried.
通过肉眼观察烘干后的普通玻璃基底,发现部分ZnO纳米棒阵列与普通玻璃基底分离。分离的部分呈现白色,未分离的部分呈现无色。通过XRD图谱可知ZnO纳米棒阵列延着[001]晶向择优生长,如图2中所示。By visually observing the ordinary glass substrate after drying, it was found that part of the ZnO nanorod array was separated from the ordinary glass substrate. The separated part appears white, and the unseparated part appears colorless. The XRD pattern shows that the ZnO nanorod array grows preferentially along the [001] crystal direction, as shown in Figure 2.
将生长有ZnO纳米棒阵列的普通玻璃基底在400℃下退火30分钟,待温度降至室温后发现,与普通玻璃基底分离的ZnO纳米棒阵列的面积明显增加,可达1cm 2(如图3所示)。将分离的ZnO纳米棒阵列从玻璃基底上剥离到曲拉通粘结剂中,ZnO纳米棒阵列在曲拉通粘结剂中可以自由弯曲,表现出良好的柔韧性。然后采用曲面陶瓷管捞取ZnO纳米棒阵列,ZnO纳米棒阵列自发贴附在曲面陶瓷管上。最后,对曲面陶瓷管进行400℃热处理,实现大面积的ZnO纳米棒阵列向曲面陶瓷管的转移。如图4中所示,FESEM图像显示转移到曲面陶瓷管的ZnO纳米棒阵列的结构没有受到破坏。 The ordinary glass substrate on which the ZnO nanorod array was grown was annealed at 400°C for 30 minutes. After the temperature dropped to room temperature, it was found that the area of the ZnO nanorod array separated from the ordinary glass substrate increased significantly, up to 1cm 2 (Figure 3) Shown). The separated ZnO nanorod array is peeled from the glass substrate into the Triton adhesive. The ZnO nanorod array can be bent freely in the Triton adhesive and exhibits good flexibility. Then, a curved ceramic tube is used to retrieve the ZnO nanorod array, and the ZnO nanorod array is spontaneously attached to the curved ceramic tube. Finally, the curved ceramic tube is heat-treated at 400°C to realize the transfer of the large-area ZnO nanorod array to the curved ceramic tube. As shown in Figure 4, the FESEM image showed that the structure of the ZnO nanorod array transferred to the curved ceramic tube was not damaged.
实施例2 CuO纳米阵列的剥离转移Example 2 Exfoliation and Transfer of CuO Nano Array
采用旋涂-退火法在面积为4cm 2的FTO玻璃基底表面旋涂、退火5次,制备一层CuO薄膜。配制0.2mol/L的Cu(NO 3) 2和HMTA水溶液各80ml,将这两种溶液混合,得到水热前驱体溶液。将旋涂有CuO薄膜的FTO玻璃基底浸入水热前驱体溶液中,在90℃下保温4小时。待水热反应溶液自然冷却至室温后,取出FTO玻璃基底,采用去离子水对其清洗后烘干。 A layer of CuO film was prepared by spin coating-annealing method on the surface of FTO glass substrate with an area of 4 cm 2 by spin coating and annealing 5 times. Prepare 0.2 mol/L Cu(NO 3 ) 2 and 80 ml of HMTA aqueous solution, and mix these two solutions to obtain a hydrothermal precursor solution. The FTO glass substrate spin-coated with CuO film was immersed in the hydrothermal precursor solution and kept at 90°C for 4 hours. After the hydrothermal reaction solution is naturally cooled to room temperature, the FTO glass substrate is taken out, washed with deionized water, and dried.
通过肉眼观察烘干后的FTO玻璃基底,发现部分CuO纳米阵列与基底分离。图5和图6分别为所述CuO纳米阵列的XRD图谱和FESEM图像。By visually observing the dried FTO glass substrate, it was found that part of the CuO nanoarray was separated from the substrate. Figures 5 and 6 are the XRD patterns and FESEM images of the CuO nanoarray, respectively.
将生长有CuO纳米阵列的FTO玻璃基底在400℃下退火30分钟,待温度降至室温后发现,与FTO玻璃基底分离的CuO纳米阵列的面积明显增加,可达1cm 2。将分离的CuO纳米阵列从FTO玻璃基底上剥离到松油醇粘结剂中,CuO纳米阵列在松油醇粘结剂中可以自由弯曲,表现出良好的柔韧性。然后采用曲面陶瓷管捞取CuO纳米阵列,CuO纳米阵列自发贴附在曲面陶瓷管上。最后,对曲面陶瓷管进行400℃热处理,实现大面积的CuO纳米阵列向曲面陶瓷管的转移。 The FTO glass substrate on which the CuO nano-array is grown is annealed at 400° C. for 30 minutes. After the temperature drops to room temperature, it is found that the area of the CuO nano-array separated from the FTO glass substrate is significantly increased, up to 1 cm 2 . The separated CuO nanoarray is peeled from the FTO glass substrate into the terpineol binder, and the CuO nanoarray can be bent freely in the terpineol binder, showing good flexibility. Then, a curved ceramic tube is used to pick up the CuO nano-array, and the CuO nano-array is spontaneously attached to the curved ceramic tube. Finally, the curved ceramic tube is heat-treated at 400°C to realize the transfer of the large-area CuO nano-array to the curved ceramic tube.
实施例3 NiO纳米阵列的剥离转移Example 3 Exfoliation and transfer of NiO nanoarray
采用旋涂-退火法在面积为4cm 2的Si基底表面旋涂、退火3次,制备一层NiO薄膜。配制0.15mol/L的Ni(NO 3) 2和HMTA水溶液各90ml,将这两种溶液混合,得到水热前驱体溶液。将旋涂有NiO薄膜的Si基底浸入水热前驱体溶液中,在90℃下保温4小时。水热反应溶液自然冷却至室温后,取出Si基底,采用去离子水对其清洗后烘干。 A layer of NiO film was prepared by spin coating-annealing method on the surface of Si substrate with an area of 4 cm 2 by spin coating and annealing 3 times. Prepare 0.15 mol/L Ni(NO 3 ) 2 and 90 ml of HMTA aqueous solution, and mix these two solutions to obtain a hydrothermal precursor solution. The Si substrate spin-coated with NiO film was immersed in the hydrothermal precursor solution and kept at 90°C for 4 hours. After the hydrothermal reaction solution is naturally cooled to room temperature, the Si substrate is taken out, washed with deionized water, and dried.
通过肉眼观察烘干后的Si基底,发现部分NiO纳米阵列与Si基底分离。通过XRD图谱和FESEM图像可知NiO纳米阵列的物相和形貌。By visually observing the dried Si substrate, it was found that part of the NiO nanoarray was separated from the Si substrate. The phase and morphology of the NiO nanoarray can be known through XRD patterns and FESEM images.
将生长有NiO纳米阵列的Si基底在500℃下退火10分钟,待温度降至室温后发现,与Si基底分离的NiO纳米阵列的面积明显增加,可达1cm 2。将分离的NiO纳米阵列从Si基底上剥离到醋酸镍溶胶中,NiO纳米阵列在醋酸镍溶胶中可以自由弯曲,表现良好的柔韧性。然后采用带有叉指电极的聚四氟乙烯柔性基底捞取NiO纳米阵列,NiO纳米阵列自发贴附在聚四氟乙烯柔性基底上。最后,对聚四氟乙烯柔性基底进行350℃热处理,实现大面积的NiO纳米阵列向聚四氟乙烯柔性基底的转移。FESEM图像显示转移到聚四氟乙烯柔性基底的NiO纳米阵列的结构没有受到破坏。 The Si substrate on which the NiO nanoarray was grown was annealed at 500°C for 10 minutes. After the temperature dropped to room temperature, it was found that the area of the NiO nanoarray separated from the Si substrate increased significantly, reaching 1cm 2 . The separated NiO nano-array is peeled from the Si substrate into the nickel acetate sol. The NiO nano-array can be bent freely in the nickel acetate sol and exhibits good flexibility. Then, the NiO nano-array is picked up by the flexible polytetrafluoroethylene substrate with interdigital electrodes, and the NiO nano-array is spontaneously attached to the flexible polytetrafluoroethylene substrate. Finally, the PTFE flexible substrate is heat-treated at 350°C to realize the transfer of the large-area NiO nano-array to the PTFE flexible substrate. The FESEM image showed that the structure of the NiO nanoarray transferred to the flexible PTFE substrate was not damaged.
实施例4 Co3O4纳米阵列的剥离转移Example 4 Stripping and Transfer of Co3O4 Nano Array
采用旋涂-退火法在面积为4cm 2的Si基底表面旋涂、退火3次,制备一层Co 3O 4薄膜。配制0.15mol/L的Co(NO 3) 2和尿素水溶液各90ml,将这两种溶液混合,得到水热前驱体溶液。将旋涂有Co 3O 4薄膜的Si基底浸入水热前驱体溶液中,在95℃下保温6小时。水热反应溶液自然冷却至室温后,取出Si基底,采用去离子水对其清洗后烘干。 The spin coating-annealing method was used to spin-coat and anneal 3 times on the surface of a Si substrate with an area of 4 cm 2 to prepare a Co 3 O 4 film. Prepare 0.15 mol/L Co(NO 3 ) 2 and 90 ml of urea aqueous solution, and mix these two solutions to obtain a hydrothermal precursor solution. The Si substrate spin-coated with the Co 3 O 4 film was immersed in the hydrothermal precursor solution and kept at 95° C. for 6 hours. After the hydrothermal reaction solution is naturally cooled to room temperature, the Si substrate is taken out, washed with deionized water, and dried.
通过肉眼观察烘干后的Si基底,发现部分Co 3O 4纳米阵列与Si基底分离。通过XRD图谱和FESEM图像可知Co 3O 4纳米阵列的物相和形貌。 By visually observing the dried Si substrate, it was found that part of the Co 3 O 4 nano-array was separated from the Si substrate. The phase and morphology of the Co 3 O 4 nano-array can be known through XRD patterns and FESEM images.
将生长有Co 3O 4纳米阵列的Si基底在500℃下退火10分钟,待温度降至室温后发现,与Si基底分离的Co 3O 4纳米阵列的面积明显增加,可达1cm 2。将分离的Co 3O 4纳米阵列从Si基底上剥离到醋酸钴溶胶中,Co3O4纳米阵列在醋酸钴溶胶中可以自由弯曲,表现良好的柔韧性。然后采用带有叉指电极的聚四氟乙烯柔性基底捞取Co 3O 4纳米阵列,Co 3O 4纳米阵列自发贴附在聚四氟乙烯柔性基底上。最后,对聚四氟乙烯柔性基底进行300℃热处理,实现大面积的Co 3O 4纳米阵列向聚四氟乙烯柔性基底的转移。FESEM图像显示转移到聚四氟乙烯柔性基底的Co 3O 4纳米阵列的结构没有受到破坏。 The Si substrate on which the Co 3 O 4 nano-array was grown was annealed at 500° C. for 10 minutes. After the temperature dropped to room temperature, it was found that the area of the Co 3 O 4 nano-array separated from the Si substrate was significantly increased, reaching 1 cm 2 . The separated Co 3 O 4 nano-array is peeled from the Si substrate into the cobalt acetate sol. The Co 3 O 4 nano-array can be bent freely in the cobalt acetate sol and exhibits good flexibility. Then, a flexible polytetrafluoroethylene substrate with interdigital electrodes is used to harvest the Co 3 O 4 nano-array, and the Co 3 O 4 nano-array is spontaneously attached to the flexible polytetrafluoroethylene substrate. Finally, the flexible polytetrafluoroethylene substrate is heat-treated at 300°C to realize the transfer of the large-area Co 3 O 4 nano-array to the flexible polytetrafluoroethylene substrate. The FESEM image showed that the structure of the Co 3 O 4 nano-array transferred to the flexible polytetrafluoroethylene substrate was not damaged.
本发明的有益效果是:本发明可以在无需有机树脂以及特殊仪器设备的辅助下,实现面积达1cm 2的金属氧化物纳米阵列的简单、快速剥离和转移,并且可转移至曲面基底和柔性基底上。此方法比以往报道的方法都要简单,使得它更能够使用于大规模、低成本纳米器件的制备,有利于拓展纳米器件的组装形式。 The beneficial effect of the present invention is that the present invention can realize the simple and rapid peeling and transfer of metal oxide nano-arrays with an area of 1 cm 2 without the aid of organic resins and special instruments and equipment, and can be transferred to curved substrates and flexible substrates. on. This method is simpler than previously reported methods, making it more suitable for the preparation of large-scale, low-cost nanodevices, and is conducive to expanding the assembly form of nanodevices.
显而易见的是,以上实施例仅为本发明的较佳实施例,并不由此限制本发明。凡在本发明的主旨和原理之内所作的任何修改、等同替换和改进等,均应落入本发明的保护范围之内。以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明技术原理的前提下,还可以做出若干改进和变型,这些改进和变型也应视为落入本发明的保护范围。It is obvious that the above embodiments are only preferred embodiments of the present invention, and the present invention is not limited thereby. Any modification, equivalent replacement and improvement made within the spirit and principle of the present invention shall fall within the protection scope of the present invention. The above are only the preferred embodiments of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the technical principles of the present invention, several improvements and modifications can be made. These improvements and modifications It should also be regarded as falling within the protection scope of the present invention.

Claims (10)

  1. 一种金属氧化物纳米阵列的剥离转移方法,所述方法包括以下步骤:A method for peeling and transferring a metal oxide nanoarray, the method comprising the following steps:
    (1)选取与金属氧化物晶格常数失配率大于5%且热膨胀系数差异大于5×10 -6K的基底材料; (1) Select a base material with a lattice constant mismatch rate greater than 5% and a thermal expansion coefficient difference greater than 5×10 -6 K with the metal oxide;
    (2)在所述基底材料的表面预先制备金属氧化物种子层薄膜,在该过程中将退火温度控制在200~500℃;(2) Pre-preparing a metal oxide seed layer film on the surface of the base material, and controlling the annealing temperature at 200-500°C in the process;
    (3)将所述表面预制有金属氧化物种子层薄膜的基底材料浸入水热前驱体溶液中进行水热反应,从而在所述基底材料的表面生长一层金属氧化物纳米阵列;(3) Immerse the base material with a metal oxide seed layer film prefabricated on the surface into a hydrothermal precursor solution to conduct a hydrothermal reaction, thereby growing a layer of metal oxide nanoarray on the surface of the base material;
    (4)将所述水热制备的金属氧化物纳米阵列在200~500℃下热处理,实现所述金属氧化物纳米阵列与所述基底材料的分离;和(4) Heat treatment of the metal oxide nanoarray prepared by hydrothermal treatment at 200-500°C to realize the separation of the metal oxide nanoarray from the base material; and
    (5)将所述金属氧化物纳米阵列剥离至有机粘结剂或溶胶中,选取目标基底捞取所述分离的金属氧化物纳米阵列,使其贴附在所述目标基底的表面,然后在200~500℃温度下、空气气氛中进行热处理,除去残余的有机物,从而实现所述金属氧化物纳米阵列的转移。(5) The metal oxide nanoarray is peeled off into an organic binder or sol, and a target substrate is selected to pick up the separated metal oxide nanoarray and attach it to the surface of the target substrate. Heat treatment is performed at a temperature of ~500° C. in an air atmosphere to remove residual organic matter, so as to realize the transfer of the metal oxide nano-array.
  2. 根据权利要求1所述的方法,其中所述金属氧化物选自ZnO,CuO,NiO和Co 3O 4The method according to claim 1, wherein the metal oxide is selected from ZnO, CuO, NiO and Co 3 O 4 .
  3. 根据权利要求1或2所述的方法,其中所述基底材料包括但不限于玻璃基底和Si基底。The method according to claim 1 or 2, wherein the substrate material includes, but is not limited to, a glass substrate and a Si substrate.
  4. 根据权利要求3所述的方法,其中所述基底材料是FTO玻璃基底。The method according to claim 3, wherein the substrate material is an FTO glass substrate.
  5. 根据权利要求1或2所述的方法,其中所述水热前驱体溶液是由所述金属氧化物对应金属的硝酸盐溶液与胺溶液混合制得的。The method according to claim 1 or 2, wherein the hydrothermal precursor solution is prepared by mixing a nitrate solution of the corresponding metal of the metal oxide and an amine solution.
  6. 根据权利要求5所述的方法,其中所述胺溶液包括但不限于环六亚甲基四胺溶液和尿素溶液。The method according to claim 5, wherein the amine solution includes, but is not limited to, a cyclohexamethylenetetramine solution and a urea solution.
  7. 根据权利要求1或2所述的方法,其中所述目标基底是曲面基底。The method according to claim 1 or 2, wherein the target substrate is a curved substrate.
  8. 根据权利要求1或2所述的方法,其中所述有机粘结剂包括但不限于曲拉通和松油醇。The method according to claim 1 or 2, wherein the organic binder includes, but is not limited to, triton and terpineol.
  9. 根据权利要求1或2所述的方法,其中所述溶胶为所述金属氧化物对应金属的醋酸盐溶胶。The method according to claim 1 or 2, wherein the sol is an acetate sol of the corresponding metal of the metal oxide.
  10. 根据权利要求1或2所述的方法,其中所述金属氧化物纳米阵列的转移面积高达1cm 2The method according to claim 1 or 2, wherein the transfer area of the metal oxide nanoarray is up to 1 cm 2 .
PCT/CN2020/123985 2019-12-12 2020-10-27 Stripping transfer method for large-area metal oxide nanoarray WO2021114910A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201911288794.5A CN111056527A (en) 2019-12-12 2019-12-12 Stripping transfer method for large-area metal oxide nano array
CN201911288794.5 2019-12-12

Publications (1)

Publication Number Publication Date
WO2021114910A1 true WO2021114910A1 (en) 2021-06-17

Family

ID=70301571

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/123985 WO2021114910A1 (en) 2019-12-12 2020-10-27 Stripping transfer method for large-area metal oxide nanoarray

Country Status (2)

Country Link
CN (1) CN111056527A (en)
WO (1) WO2021114910A1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111056527A (en) * 2019-12-12 2020-04-24 深圳瀚光科技有限公司 Stripping transfer method for large-area metal oxide nano array
CN114369252A (en) * 2020-10-14 2022-04-19 中国科学院福建物质结构研究所 Method for preparing metal-organic framework film based on self-sacrifice metal oxide film template

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217391A (en) * 2001-01-23 2002-08-02 Seiko Epson Corp Method for manufacturing laminate and semiconductor device
CN101319370A (en) * 2008-06-24 2008-12-10 济南大学 Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array
CN105070352A (en) * 2015-07-22 2015-11-18 西安交通大学 Flexible super-flat transparent conductive film and preparing method thereof
CN107611004A (en) * 2017-08-14 2018-01-19 南京大学 A kind of method for preparing Free-standing GaN backing material
CN108122870A (en) * 2017-12-26 2018-06-05 中国人民解放军国防科技大学 Heat dissipation structure, preparation method thereof and heat dissipation device
CN108374200A (en) * 2018-02-11 2018-08-07 绍兴文理学院 A kind of preparation method of nanometer of linear organic single-crystal domain
CN111056527A (en) * 2019-12-12 2020-04-24 深圳瀚光科技有限公司 Stripping transfer method for large-area metal oxide nano array

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2436398B (en) * 2006-03-23 2011-08-24 Univ Bath Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials
CN100454490C (en) * 2006-09-30 2009-01-21 中国科学院合肥物质科学研究院 Method for producing substrate material of self-stripping gallium nitride
CN108517555B (en) * 2017-12-29 2020-08-04 西安电子科技大学 Method for obtaining large-area high-quality flexible self-supporting monocrystalline oxide film based on Van der Waals epitaxy

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002217391A (en) * 2001-01-23 2002-08-02 Seiko Epson Corp Method for manufacturing laminate and semiconductor device
CN101319370A (en) * 2008-06-24 2008-12-10 济南大学 Method for controlling orientation and profile characteristic of zinc oxide nano-stick/nano-tube array
CN105070352A (en) * 2015-07-22 2015-11-18 西安交通大学 Flexible super-flat transparent conductive film and preparing method thereof
CN107611004A (en) * 2017-08-14 2018-01-19 南京大学 A kind of method for preparing Free-standing GaN backing material
CN108122870A (en) * 2017-12-26 2018-06-05 中国人民解放军国防科技大学 Heat dissipation structure, preparation method thereof and heat dissipation device
CN108374200A (en) * 2018-02-11 2018-08-07 绍兴文理学院 A kind of preparation method of nanometer of linear organic single-crystal domain
CN111056527A (en) * 2019-12-12 2020-04-24 深圳瀚光科技有限公司 Stripping transfer method for large-area metal oxide nano array

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
YANG TINGQIANG, LIU YUELI, JIN WEI, HAN YIYANG, YANG SHUANG, CHEN WEN: "Investigation on the Transformation of Absorbed Oxygen at ZnO {101̅0} Surface Based on a Novel Thermal Pulse Method and Density Functional Theory Simulation", ACS SENSORS, vol. 2, no. 7, 28 July 2017 (2017-07-28), pages 1051 - 1059, XP055820319, ISSN: 2379-3694, DOI: 10.1021/acssensors.7b00363 *

Also Published As

Publication number Publication date
CN111056527A (en) 2020-04-24

Similar Documents

Publication Publication Date Title
WO2021114910A1 (en) Stripping transfer method for large-area metal oxide nanoarray
US20200402796A1 (en) Epitaxial lift-off process of graphene-based gallium nitride
CN102104079B (en) Preparation method of nano array with one-dimensional ZnO/ZnS nuclear shell structure and monocrystal ZnS nanotube array
CN108517555B (en) Method for obtaining large-area high-quality flexible self-supporting monocrystalline oxide film based on Van der Waals epitaxy
CN105070664B (en) Opto-electronic device ZnO/ZnS hetero-junctions nano-array membrane preparation methods
CN111137847B (en) Preparation method of flexible functional oxide film with adjustable buckling micro-nano structure
CN110467177B (en) Composite graphene framework and preparation method and application thereof
CN110690312A (en) Flexible ultraviolet detector and method obtained by nondestructive transfer process of GaN nanorod array grown on graphene substrate
Zhao et al. Nucleation and growth of ZnO nanorods on the ZnO-coated seed surface by solution chemical method
CN114203848A (en) Flexible antimony selenide solar cell and preparation method thereof
CN114180562B (en) Graphene transfer method
CN108766630B (en) Flexible sensor based on metal nanowires and preparation method thereof
CN110963484A (en) Doping layer-assisted large-area high-quality graphene nondestructive transfer method
CN210805800U (en) Flexible ultraviolet detector of GaN nanorod array growing on graphene substrate
CN110224035A (en) A kind of hetero-junctions, preparation method and application
CN100435279C (en) Method for fabricating large area, self-supporting semiconductor material with wide forbidden band
CN114887614A (en) Preparation method of ZnO flexible film with high optical performance
CN110620183B (en) Preparation method of perovskite passivation layer
CN210467888U (en) Boron nitride packaged two-dimensional organic-inorganic heterojunction
CN108470674A (en) A kind of preparation method for realizing pure phase GaAs nano wires using stress regulation and control
CN111446370A (en) Preparation method of large-area quasi-single crystal perovskite film by cavity limited-area in-situ growth
CN1958877A (en) Periodic monocrystalline Nano structure of castellated ZnO, preparation method
KR101813763B1 (en) An attachable organic photovoltaics and a fabrication method thereof
CN114059036B (en) Application of iron film in auxiliary stripping of diamond polycrystalline film
CN115216748B (en) Preparation method of tellurium film and semiconductor device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20898247

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20898247

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 06/12/2022)

122 Ep: pct application non-entry in european phase

Ref document number: 20898247

Country of ref document: EP

Kind code of ref document: A1