WO2021114028A1

WO2021114028A1 - Transfer unit of miniature light-emitting diode, display module and display device

Info

Publication number: WO2021114028A1
Application number: PCT/CN2019/124040
Authority: WO
Inventors: 洪温振; 徐瑞林
Original assignee: 重庆康佳光电技术研究院有限公司
Priority date: 2019-12-09
Filing date: 2019-12-09
Publication date: 2021-06-17
Also published as: CN113261104A

Abstract

The present invention provides a transfer unit. The transfer unit is mounted on a back plate. The transfer unit comprises a light-emitting unit having at least two miniature light-emitting diodes, a light barrier layer covering the periphery of the light-emitting unit, and a light-emitting area and a binding area which are exposed at the light barrier layer and located at two ends opposite to the light-emitting unit. The at least two miniature light-emitting diodes are fixed together and emit two paths of monochromatic light of the same color, and the at least two miniature light-emitting diodes form a positive electrode and a negative electrode; the two paths of monochromatic light are emitted from the light exiting area, the positive electrode and the negative electrode are respectively located at one side of the light exiting area and one side of the binding area, or both the positive electrode and the negative electrode are located at one side of the binding area, and the binding area faces the back plate. In addition, the present invention also provides a display module and a display device using the transfer unit.

Description

Transfer unit, display module and display device of miniature light-emitting diode

Technical field

The present invention relates to the technical field of micro-light-emitting diode display, in particular to a transfer unit, a display module and a display device of a micro-light-emitting diode.

Background technique

Miniature light-emitting diodes, that is, light-emitting diode miniaturization and matrix technology, have good stability, longevity, and advantages in operating temperature. At the same time, miniature light-emitting diodes also inherit the advantages of light-emitting diodes such as low power consumption, high color saturation, fast response speed, and strong contrast, and have great application prospects, such as miniature light-emitting diode display screens.

The back panel of the micro-light-emitting diode display includes several pixel areas (SPR, Sub pixel Rendering), and each pixel area includes a red light-emitting diode, a green light-emitting diode, and a blue light-emitting diode. If the light-emitting diode of any color is damaged or has poor contact, it will affect the light emission of the pixel area to which it belongs, and even affect the display beauty of the entire micro-light-emitting diode display. In addition, the color of light emitted by adjacent red, green, and blue LEDs may affect each other, thereby affecting the contrast of the micro LED display.

technical problem

The invention provides a transfer unit, a display module and a display device, which can improve the display contrast.

Technical solutions

A first aspect of the embodiments of the present invention provides a transfer unit, the transfer unit is installed on a backplane, and the transfer unit includes:

A light emitting unit having at least two micro light emitting diodes, the at least two micro light emitting diodes are fixed together and emit two monochromatic lights with the same color, and the at least two micro light emitting diodes are formed with an anode and a cathode;

Covering the light-blocking layer provided on the periphery of the light-emitting unit; and

The light-emitting area and the bonding area that are exposed to the light-blocking layer and are located at opposite ends of the light-emitting unit, the two monochromatic lights are emitted from the light-emitting area, and the anode and the anode are respectively located in the light-emitting area One side and one side of the bonding area, or both the positive electrode and the negative electrode are located on one side of the bonding area, and the bonding area faces the back plate.

A second aspect of the embodiments of the present invention provides a display module, the display assembly includes a backplane, the backplane includes a number of pixel areas, the pixel area includes three pixel sub-areas, characterized in that each sub-area The above-mentioned one transfer unit is installed in the pixel area, and the transfer unit installed in each sub-pixel area emits light of different colors.

A third aspect of the embodiments of the present invention provides a display device. The display device includes a housing, a display panel disposed on the housing, and a display module accommodated between the display panel and the housing, and the display module The group includes a backplane and a plurality of transfer units installed on the backplane, the backplane includes the plurality of pixel areas for the plurality of transfer units to be installed, the pixel area includes three pixel sub-areas, three The transfer units are respectively arranged in the pixel sub-regions, and each transfer unit emits light of different colors, which is characterized in that the transfer unit is the above-mentioned transfer unit.

Beneficial effect

The above-mentioned transfer unit fixes the miniature light-emitting diodes to each other to form a light-emitting diode combination. When any light-emitting diode fails to emit light normally due to damage or poor contact, it does not affect the light emission of the pixel area to which it belongs; the light-blocking layer is used to wrap the light-emitting unit, Reduce the influence of different colors of light between adjacent light-emitting units.

Description of the drawings

FIG. 1 is a schematic diagram of a display device provided by an embodiment of the present invention.

Fig. 2 is a schematic diagram of a backplane provided by an embodiment of the present invention.

FIG. 3 is a schematic diagram of a display assembly provided by an embodiment of the present invention.

Fig. 4 is a schematic diagram of a transfer unit provided by the first embodiment of the present invention.

Fig. 5 is a schematic diagram of a transfer unit provided by the second embodiment of the present invention.

Fig. 6 is a schematic diagram of a transfer unit provided by the first embodiment of the present invention.

Fig. 7 is a schematic diagram of a transfer unit provided by a second embodiment of the present invention.

Fig. 8 is a schematic diagram of a transfer unit provided by a third embodiment of the present invention.

Fig. 9 is a schematic diagram of a transfer unit provided by a fourth embodiment of the present invention.

Fig. 10 is a schematic diagram of a transfer unit provided by a fifth embodiment of the present invention.

The best mode of the present invention

In order to have a clearer and more accurate understanding of the content of the present invention, it will now be described in detail with reference to the accompanying drawings. The drawings of the specification show examples of embodiments of the present invention, in which the same reference numerals denote the same elements. It can be understood that the scale shown in the drawings in the specification is not the scale of the actual implementation of the present invention, and is only for illustrative purposes, and is not drawn according to the original size.

Please refer to FIG. 1 and FIG. 2, which are a schematic diagram of the display device 1000 and a schematic diagram of the display assembly 99. The display device 1000 may be a product with a display function, such as a notebook computer, a tablet computer, a monitor, a television, a mobile phone, and so on. The display device 1000 includes a display assembly 99, a housing 100, and a panel 200. Among them, the display assembly 99 is accommodated between the housing 100 and the display panel 200.

Please refer to FIG. 3 and FIG. 4, the display assembly 99 includes a backplane 10, a plurality of pixel regions 20, and a plurality of transfer units 30 installed in the plurality of pixel regions 20. Each pixel area 20 includes three sub-pixel areas 20R, 20G, and 20B. The three sub-pixel regions 20R, 20G, and 20B are called red sub-pixel regions, green sub-pixel regions, and blue sub-pixel regions according to the light-emitting colors. A corresponding transfer unit 30 is installed in each sub-pixel area 20R, 20G, and 20B. The transfer unit 30 is divided into a red transfer unit 30R, a green transfer unit 30G, and a blue transfer unit 30B according to the different colors of the generated light. Each transfer unit 30 includes at least two miniature light emitting diodes 310. Understandably, each of the sub-pixel regions 20R, 20G, and 20B is equipped with a plurality of micro light emitting diodes 301 respectively. According to emitting light of different colors, the micro light emitting diode 310 may also be a red micro light emitting diode 301R, a green micro light emitting diode 310G, and a blue light emitting diode 310B. For example, the red sub-pixel area 20R is equipped with a plurality of micro light-emitting diodes 310R emitting red light. Thus, when a certain micro light-emitting diode 310R in the sub-pixel area 20R is a dead pixel, it does not affect the overall display effect.

Referring to FIG. 4, the transfer unit 30 includes a light-emitting unit 31, a light blocking layer 32 covering the periphery of the light-emitting unit 31, a light-emitting area 33 and a bonding area 34 located at opposite ends of the light-emitting unit 31. Wherein, the light-emitting area 33 and the bonding area 34 are exposed to the light-blocking layer 32. When the transfer unit 30 is installed on the back plate 10, the bonding area 34 faces the back plate 30.

The light blocking layer 32 is made of an opaque material. In this embodiment, the light blocking layer 32 is made of vinyl. The light blocking material 102 is doped with friction particles or a non-slip pattern is designed on the surface of the light blocking material 102, so that the friction force of the light blocking layer 32 can be increased. Since the transfer unit 30 needs to be transferred from another substrate (for example, a native substrate) to the back plate 10 before installation, the increased friction of the light blocking layer 32 can prevent the transfer unit 30 from slipping off.

The transfer unit 30 forms a light emitting area 33 and a bonding area 34 at opposite ends of the light emitting unit 31. The light blocking layer 32 is arranged around the light emitting area 33 and the bonding area 34, that is, the bonding area 34 and the light emitting area 33 are exposed to the light blocking layer 32. Specifically, the two miniature light-emitting diodes 310 emit two lights of the same color. And two lights of the same color are emitted from the light-emitting area 33. Each micro light emitting diode 310 has an anode 3101 and a cathode 3102. In this embodiment, since each transfer unit 30 is provided with a light blocking layer 32, the micro light emitting diode 310 in the backplane 10 can be prevented from being interfered by the light of different colors emitted by the adjacent micro light emitting diode 310, which affects the display effect. . In addition, the micro light emitting diodes 310 have the same structure, and they are all vertical structures or flip-chip structures. In some feasible embodiments, each micro light emitting diode 310 may also partially adopt a vertical structure and partially adopt a flip-chip structure.

In this embodiment, the micro light-emitting diode 310 has a vertical structure, the anode 3101 is formed at an end of the light-emitting unit 31 located in the light-emitting area 33, and the cathode is formed at an end of the light-emitting unit 31 located in the bonding area 34. In some feasible embodiments, the positive electrode 3101 is formed at one end of the light-emitting unit 31 located in the bonding area 34, and the negative electrode is formed at one end of the light emitting unit 31 located in the light-emitting area 33. That is, the positive electrode 3101 and the negative electrode 3102 of each micro light emitting diode 310 are also exposed from the light blocking layer 32, and the positive electrode 3101 and the negative electrode 3102 protrude from the light blocking layer along the light path direction of the transfer unit 30 and the direction opposite to the light path direction. 32 ends.

Please refer to FIG. 5, in some feasible embodiments, the micro light emitting diode 3102 has a flip-chip structure, and the anode 3101 and the cathode 31102 are both formed at one end of the light emitting unit 31 located in the bonding area 34. That is, the anode 3101 and the cathode 3102 of each micro light emitting diode 310 are also exposed from the light blocking layer 32, and the anode 3101 and the cathode 3102 respectively protrude from both ends of the light blocking layer 32 in a direction opposite to the optical path direction of the transfer unit 30.

The specific structure of the transfer unit 30 when the micro light-emitting diode 310 of the vertical structure and the flip-chip structure are respectively adopted will be described in detail below.

Please refer to FIG. 6, which is a schematic structural diagram of the transfer unit 30 provided in the first embodiment. The transfer unit 30 includes a light-emitting unit 31a and a light blocking layer 32a wrapped around the side wall of the light-emitting unit 31a. The light-emitting unit 31a includes 3 micro light-emitting diodes 310a with three flip-chip structures. In some feasible embodiments, the transfer unit 30 may also use two or more than three micro-light-emitting diodes, as long as the number of micro-light-emitting diodes is at least two. That is, in this embodiment and the following embodiments, only three micro light-emitting diodes are taken as an example for description, and the number of micro light-emitting diodes is not limited to three.

Specifically, three micro light emitting diodes 310a are fixed together, and each micro light emitting diode 310a has the same structure. Each micro light emitting diode 310a includes a P-type conductive layer 3103a, an N-type conductive layer 3104a, and an active layer 3105a located between the P-type conductive layer 3103a and the N-type conductive layer 3104a. Among them, the N-type conductive layer 3104a of each light-emitting diode 310a is connected together to form an N-type conductive layer L _N1 . That is, the three micro light emitting diodes 310a share one N-type conductive layer L _N1 . The light emitting area 33 is located on the side of the N-type conductive layer L _N1 away from the active layer 3105a. The anode 3101a of each micro light emitting diode is formed on the corresponding P-type semiconductor layer 3103a. The bonding region 34 is located on the side of the P-type semiconductor layer 3103a away from the active layer 3105a. In this embodiment, all the micro light emitting diodes 310a share a negative electrode 3102a. The negative electrode 3102a is formed on the corresponding N-type conductive layer Ln ₁ . In some feasible embodiments, each micro light emitting diode 310a forms an independent negative electrode 3102a. Specifically, the negative electrode 3102a of each micro light emitting diode 310a is formed on the N-type conductive layer 3104a at intervals (as shown in FIG. 10). In this embodiment, since the three miniature light-emitting diodes 310a share one N-type conductive layer L _N1 , the N-type conductive layer L _N1 has a positioning function for the three miniature light-emitting diodes 310 a, so that the three miniature light-emitting diodes 310 a face each other. The location is relatively stable. The light emitting unit 31a forms a light blocking layer 3107a in the gap between the micro light emitting diodes 310a. When processing the light-blocking layer 32a on the light-emitting unit 31a, a fixture (shown in the figure) can be used to cover the light-emitting unit 31a, while filling the light-emitting unit 31a with a liquid light-blocking material, and the positioning layer 3107a and 3107a can be formed on the light-emitting unit 31a at the same time. Light blocking layer 32a. In the above embodiment, the transfer unit 30 adopts the micro light emitting diode 310a of the flip-chip structure, and each micro light emitting diode 310a shares the N-type conductive layer L _N1 , which can stabilize the relative position between the micro light emitting diodes 310a and fill the light blocking material. More convenient and more efficient. In addition, each miniature light-emitting diode 310a supplies a negative electrode 3102a, which simplifies the structure and processing of the transfer unit 30, saves materials, and thus saves costs.

Please refer to FIG. 7, which is a schematic structural diagram of the transfer unit 30 provided in the second embodiment. The transfer unit 30 includes a light-emitting unit 31b and a light blocking layer 32b wrapped on the sidewall of the light-emitting unit 31b. The micro light emitting diode 310b used in the transfer unit 30 of the second embodiment has a vertical structure. The difference between the transfer unit 30 of the second embodiment and the first embodiment is:

Specifically, P-type conductive layer 3103b of each LED 310b are connected together to form a P-type conductivity layer L _P1. The light emitting area 33 is located on the side of the P-type conductive layer 3103b away from the active layer 3105b. The bonding region 34 is located on the side of the P-type conductive layer 3103b away from the active layer 3105b. In the present embodiment, since three micro-LED 310b share a common P-type conductivity layer L _P1, L _P1 P-type conductivity layer of the three micro-LED 310b has a positioning effect, so that the relative light-emitting diodes among the three micro-310b The location is relatively stable. In this embodiment, the transfer unit 30 adopts the vertical structure of the micro light emitting diode 310b, and each micro light emitting diode shares the P-type conductive layer _LP1 , so that the relative position between the micro light emitting diodes 310b is stable, and when the light blocking material is filled More convenient and more efficient.

Please refer to FIG. 8, which is a schematic structural diagram of the transfer unit 30 provided by the third embodiment. The transfer unit 30 includes a light-emitting unit 31c and a light blocking layer 32c wrapped on the sidewall of the light-emitting unit 31c. Among them, in the third embodiment, the transfer unit 30 adopts a flip chip structure of the micro light emitting diode 310c, but the P conductive layer and the N conductive layer of each micro light emitting diode 310c are independently arranged and not shared. The difference between the transfer unit 30 of the second embodiment and the first embodiment is:

Each miniature light emitting diode 310c is completely separated. The transfer unit 30 is also provided with a positioning layer 3107c made of transparent viscose material. When processing the light-blocking layer 32c on the transfer unit 30, first, use the positioning layer 3107c to paste each micro light-emitting diode 310c together for fixing; then, use a jig (shown in the figure) to cover the light-emitting unit 31c, and The light-emitting unit 31a is filled with a liquid light-blocking material to form a light-blocking layer 32c. In this embodiment, the positioning layer 3107c is used to fix each micro light emitting diode 310c before the light blocking layer 32c is formed, which can prevent the micro light emitting diode 310c from shifting during the process of forming the light blocking layer 32c, thereby transferring the unit 30 When transferred to the backplane 10, it can be installed in an accurate position, which improves the product yield.

Please refer to FIG. 9, which is a schematic structural diagram of the transfer unit 30 provided by the fourth embodiment. The only difference between the transfer unit 30 of the fourth embodiment and the third embodiment is that the transfer unit 30 adopts a micro light emitting diode 310d with a vertical structure. Similarly, the positioning layer 3107d is used to fix each micro light emitting diode 310d before the light blocking layer 32d is formed, which can prevent the micro light emitting diode 310d from shifting during the process of forming the light blocking layer 32d, so that the transfer unit 30 is transferred to the back. The board 10 can be installed in an accurate position to improve the product yield.

Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. In this way, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and equivalent technologies, the present invention is also intended to include these modifications and variations.

The above-listed are only preferred embodiments of the present invention, and of course the scope of rights of the present invention cannot be limited by this. Therefore, equivalent changes made according to the claims of the present invention still fall within the scope of the present invention.

Claims

A transfer unit for miniature light-emitting diodes, the transfer unit being mounted on a backplane, characterized in that the transfer unit includes:

A light emitting unit having at least two micro light emitting diodes, the at least two micro light emitting diodes are fixed together and emit two monochromatic lights with the same color, and the at least two micro light emitting diodes are formed with an anode and a cathode;

Covering the light-blocking layer provided on the periphery of the light-emitting unit; and

The light-emitting area and the bonding area that are exposed to the light-blocking layer and are located at opposite ends of the light-emitting unit, the two monochromatic lights are emitted from the light-emitting area, and the anode and the anode are respectively located in the light-emitting area One side and one side of the bonding area, or both the positive electrode and the negative electrode are located on one side of the bonding area, and the bonding area faces the back plate.

To

2. The transfer unit of claim 1, wherein the light blocking layer
Mixed with friction particles.

To

3. The transfer unit of claim 1, wherein the outer surface of the light blocking layer is provided with a non-slip pattern.

To

4. The transfer unit of claim 1, wherein all the micro light emitting diodes of the light emitting unit have the same structure.

To

5. The transfer unit of claim 1, wherein each of the miniature light-emitting diodes includes an N-type semiconductor layer, a P-type semiconductor layer, and a semiconductor layer located between the N-type semiconductor layer and the P-type semiconductor layer. The active layer, all the micro light emitting diodes of the light emitting unit share the N-type semiconductor layer, and the micro light emitting diodes are positioned together through the N-type semiconductor layer, and the light exit area is located in the N-type semiconductor layer away from the active layer. One side of the layer.

To

6. The transfer unit of claim 5, wherein all micro light emitting diodes of the light emitting unit share a negative electrode, the negative electrode is formed on the N-type semiconductor layer, and the positive electrode is formed on the P-type semiconductor layer. The side of the semiconductor facing away from the active layer.

To

The transfer unit according to claim 5, wherein a light blocking layer is filled between the micro light emitting diodes, and the material of the light blocking layer is the same as the material of the light blocking layer.

To

8. The transfer unit of claim 1, wherein each of the miniature light emitting diodes comprises an N-type semiconductor layer, a P-type semiconductor layer, and a semiconductor layer located between the N-type semiconductor layer and the P-type semiconductor layer. Active layer, all the micro light emitting diodes of the light emitting unit share the P type semiconductor layer, and the P type semiconductor layer is used to position the micro light emitting diodes together. The light exit area is located in the P type semiconductor layer away from the active layer. One side of the layer.

To

9. The transfer unit according to claim 8, wherein all the micro light emitting diodes of the light emitting unit share an anode, and the anode forms a side of the P-type semiconductor layer away from the active layer, and The negative electrode is formed on the side of the N-type semiconductor away from the active layer.

To

10. The transfer unit according to claim 5 or 9, wherein the positive electrode and the negative electrode protrude from the light blocking layer along the optical path direction of the transfer unit or a direction opposite to the optical path direction.

To

11. The transfer unit of claim 1, wherein each of the miniature light-emitting diodes comprises an N-type semiconductor layer, a P-type semiconductor layer, and a semiconductor layer located between the N-type semiconductor layer and the P-type semiconductor layer. Active layer; the positive electrode and the negative electrode are respectively formed on the P-type semiconductor layer and the N-type semiconductor layer; each miniature light-emitting diode of the light-emitting unit includes a side surface, the side surface is coated with a transparent glue, so The miniature light-emitting diodes of the light-emitting unit are fixed side by side by the transparent glue.

To

12. The transfer unit according to claim 11, wherein the positive electrode is located on one side of the light emitting area, and the negative electrode is located on one side of the bonding area.

To

13. The transfer unit of claim 11, wherein the positive electrode and the negative electrode are both formed on a side of the light-emitting unit located in the bonding area.

To

14. A display module, the display assembly includes a backplane, the backplane includes a number of pixel areas, the pixel area includes three pixel sub-areas, characterized in that each sub-pixel area is installed as claimed In the transfer unit described in any one of 1 to 14, the transfer unit installed in each sub-pixel area in the pixel area emits light of different colors.

To

15. A display device, the display device comprising a housing, a display panel provided in the housing, and a display module accommodated between the display panel and the housing, the display module including a backplane and a mounting On the plurality of transfer units of the backplane, the backplane includes the plurality of pixel areas for the plurality of transfer units to be installed, the pixel area includes three pixel sub-areas, and the three pixel sub-areas are respectively arranged The transfer unit, and each transfer unit emits light of different colors, is characterized in that the transfer unit is the transfer unit according to any one of claims 1-14.