WO2021112566A1 - Élément thermoélectrique et son procédé de fabrication - Google Patents

Élément thermoélectrique et son procédé de fabrication Download PDF

Info

Publication number
WO2021112566A1
WO2021112566A1 PCT/KR2020/017487 KR2020017487W WO2021112566A1 WO 2021112566 A1 WO2021112566 A1 WO 2021112566A1 KR 2020017487 W KR2020017487 W KR 2020017487W WO 2021112566 A1 WO2021112566 A1 WO 2021112566A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
electrode
thermoelectric
conductive
thermoelectric element
Prior art date
Application number
PCT/KR2020/017487
Other languages
English (en)
Korean (ko)
Inventor
황병진
양승호
양승진
연병훈
손경현
장봉중
이태희
Original Assignee
엘티메탈 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘티메탈 주식회사 filed Critical 엘티메탈 주식회사
Publication of WO2021112566A1 publication Critical patent/WO2021112566A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/565—Moulds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/854—Thermoelectric active materials comprising inorganic compositions comprising only metals

Definitions

  • the present invention has been devised to solve the above-described problems, and includes changing a substrate and an electrode provided in a conventional thermoelectric device; and to provide a thermoelectric device having improved thermal stability, durability, and thermoelectric properties at high temperatures through the use of a conductive sealing material, and a method for manufacturing the same.
  • the effect according to the present invention is not limited by the contents exemplified above, and more various effects are included in the present specification.
  • thermoelectric element 3 is a cross-sectional view of a thermoelectric element according to a second embodiment of the present invention.
  • the average particle diameter (D 50 ) of the ceramic filler is not particularly limited and may be appropriately adjusted within a range known in the art. Considering the dispersibility, the average particle diameter is about 0.1 to 20 ⁇ m, specifically, preferably 0.5 to 15 ⁇ m. In addition, two or more types of ceramic fillers having different average particle diameters may be mixed.
  • the shape of the ceramic filler is also not particularly limited, and for example, it may have any one shape selected from the group consisting of a spherical shape, a plate shape, a needle shape, a fiber shape, a branch shape, a cone shape, a pyramid shape, and an amorphous shape.
  • thermoelectric semiconductors include bismuth (Bi), telerium (Te), cobalt (Co), samarium (Sb), indium (In), and cerium (Ce) having a composition containing at least two or more of cerium (Ce). and, non-limiting examples thereof include Bi-Te-based, Co-Sb-based, Pb-Te-based, Ge-Tb-based, Si-Ge-based, Sb-Te-based, Sm-Co-based, transition metal silicide-based, and Suku. Terdite (Skuttrudite)-based, silicide (Silicide)-based, half whistler (Half heusler), or a combination thereof, and the like.
  • the average particle diameter (D 50 ) of the metal dendrites refers to a two-dimensional size including the major axis length of the dendrites, and may be, for example, 5 to 50 ⁇ m, specifically 5 to 30 ⁇ m.
  • the main axis thickness of the dendrite may be 0.3 to 5.0 ⁇ m.
  • the metal dendrite has a higher specific surface area than the spherical metal particles as it has the above-described structural characteristics.
  • the metal dendrite may have a specific surface area measured by BET measurement of 0.4 to 3.0 m 2 /g, specifically 0.5 to 2.0 m 2 /g.
  • the apparent density of the metal dendrite may be 0.5 to 1.5 g/cm 3 , and an oxygen content of 0.35% or less is suitable.
  • the first electrode 20a and the second electrode 20b may be electrically connected to a power supply source.
  • a DC voltage When a DC voltage is applied from the outside, the holes of the p-type thermoelectric leg 30a and the electrons of the n-type thermoelectric leg 30b move, thereby generating heat and endothermic heat at both ends of the thermoelectric leg.
  • One of the metal layers (eg, the first metal layer and the second metal layer) disposed on both sides of the metal laminate is used as a conductive first substrate, and the other is etched to form a patterned first electrode in a predetermined shape.
  • the etching method may be used without limitation, an etching method known in the art, for example, physical etching, chemical etching, or a combination thereof may be applied.
  • the slit depth is 1.05 to 1.35 mm
  • the slit width is 3.0 to 4.0 mm
  • the slit length is 40.5 mm
  • thermoelectric element 200 since the description of the thermoelectric element 200 according to the second embodiment of FIG. 3 may be applied to the description of the material and structure of each component in the embodiment of FIG. 4 as it is, an individual description thereof will be omitted.
  • thermoelectric elements of Comparative Examples 1 and 2 and Examples 1 and 2 exhibited equal initial output characteristics according to the temperature of the high temperature part (see FIG. 7 below).
  • thermoelectric devices prepared in Examples 1 and 2 and Comparative Examples 1 and 2 were evaluated as follows.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Powder Metallurgy (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

L'invention concerne un élément thermoélectrique et son procédé de fabrication. Afin de renforcer la stabilité thermique et la durabilité à haute température, la présente invention concerne un élément thermoélectrique comprenant : un premier substrat conducteur qui a une première couche d'isolation formée sur une surface de celui-ci ; un second substrat conducteur qui est disposé de façon à faire face au premier substrat et a une seconde couche d'isolation formée sur une surface de celui-ci ; une première électrode disposée sur la première couche d'isolation ; une seconde électrode disposée sur la seconde couche d'isolation ; une pluralité de pattes thermoélectriques interposées entre la première électrode et la seconde électrode ; et un matériau d'étanchéité conducteur entourant les côtés périphériques externes du premier substrat conducteur et du second substrat conducteur.
PCT/KR2020/017487 2019-12-06 2020-12-02 Élément thermoélectrique et son procédé de fabrication WO2021112566A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0161983 2019-12-06
KR20190161983 2019-12-06

Publications (1)

Publication Number Publication Date
WO2021112566A1 true WO2021112566A1 (fr) 2021-06-10

Family

ID=76221776

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2020/017487 WO2021112566A1 (fr) 2019-12-06 2020-12-02 Élément thermoélectrique et son procédé de fabrication

Country Status (2)

Country Link
KR (1) KR102463859B1 (fr)
WO (1) WO2021112566A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007110082A (ja) * 2005-08-02 2007-04-26 Toshiba Corp 熱電変換装置及びその製造方法
KR20130009592A (ko) * 2011-07-13 2013-01-23 미쓰이 긴조꾸 고교 가부시키가이샤 덴드라이트상 구리분
KR20130035016A (ko) * 2011-09-29 2013-04-08 삼성전기주식회사 열전 모듈
KR20150088063A (ko) * 2014-01-23 2015-07-31 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 냉각장치
KR102020155B1 (ko) * 2018-10-24 2019-09-10 엘티메탈 주식회사 열전 소자 및 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007110082A (ja) * 2005-08-02 2007-04-26 Toshiba Corp 熱電変換装置及びその製造方法
KR20130009592A (ko) * 2011-07-13 2013-01-23 미쓰이 긴조꾸 고교 가부시키가이샤 덴드라이트상 구리분
KR20130035016A (ko) * 2011-09-29 2013-04-08 삼성전기주식회사 열전 모듈
KR20150088063A (ko) * 2014-01-23 2015-07-31 엘지이노텍 주식회사 열전모듈 및 이를 포함하는 냉각장치
KR102020155B1 (ko) * 2018-10-24 2019-09-10 엘티메탈 주식회사 열전 소자 및 그 제조방법

Also Published As

Publication number Publication date
KR102463859B1 (ko) 2022-11-07
KR20210071842A (ko) 2021-06-16

Similar Documents

Publication Publication Date Title
WO2020085681A1 (fr) Élément thermoélectrique et son procédé de fabrication
WO2015093903A1 (fr) Matériau d'emballage métallique présentant une bonne résistance à la chaleur, procédé de fabrication de celui-ci et dispositif électronique flexible emballé dans ledit matériau d'emballage métallique
WO2012157916A1 (fr) Nouveau semi-conducteur composé et son utilisation
WO2016167525A1 (fr) Matériaux thermoélectriques, élément thermoélectrique et module thermoélectrique les comprenant
CN101150038A (zh) 导热性能提高的组件及其制造方法
WO2011122888A2 (fr) Matériau thermoélectrique, module et dispositif thermoélectriques comprenant le matériau thermoélectrique
JP2003133600A (ja) 熱電変換部材及びその製造方法
CA1232363A (fr) Generateur thermoelectrique, et sa fabrication
WO2022060026A1 (fr) Module thermoélectrique et dispositif générateur d'énergie le comportant
KR101904538B1 (ko) 세라믹회로기판 및 이의 제조 방법
WO2020159177A1 (fr) Dispositif thermoélectrique
WO2021112566A1 (fr) Élément thermoélectrique et son procédé de fabrication
US20130139866A1 (en) Ceramic Plate
WO2020130282A1 (fr) Élément thermoélectrique et pâte à braser comprise dans celui-ci
WO2018143780A1 (fr) Élément thermoélectrique
WO2019117559A1 (fr) Film mince de métal de transition-dichalcogénure et son procédé de fabrication
WO2022025325A1 (fr) Matériau thermoélectrique comprenant une couche barrière de diffusion multicouche, et élément thermoélectrique pourvu de celui-ci
WO2020153799A1 (fr) Élément thermoélectrique
WO2022065824A1 (fr) Module thermoélectrique et dispositif de production d'énergie le comprenant
WO2022050820A1 (fr) Module thermoélectrique et appareil de production d'énergie le comprenant
WO2021145677A1 (fr) Dispositif de production d'énergie
WO2022092377A1 (fr) Matériau thermoélectrique comprenant une couche barrière de diffusion multicouche, et élément thermoélectrique le comprenant
WO2020055101A1 (fr) Élément thermoélectrique
WO2021045516A1 (fr) Module thermoélectrique
CN116368965A (zh) 热电转换组件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20895834

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20895834

Country of ref document: EP

Kind code of ref document: A1