WO2021112156A1

WO2021112156A1 - Substrate processing apparatus and substrate processing method

Info

Publication number: WO2021112156A1
Application number: PCT/JP2020/044959
Authority: WO
Inventors: 英立磯川; 健史新海; 大吉成; 幸一橋本; 幸次前田; 海洋徐; 俊江原
Original assignee: 株式会社荏原製作所
Priority date: 2019-12-06
Filing date: 2020-12-03
Publication date: 2021-06-10
Also published as: TW202135986A

Abstract

Proposed are a substrate processing apparatus and a substrate processing method that can improve cleaning efficiency of a substrate.　The substrate processing apparatus comprises: a polishing part that polishes the substrate; a cleaning part for cleaning the polished substrate; a transport mechanism for transporting the substrate from the polishing part to the cleaning part, the transport mechanism being configured so that the transport mechanism has a hand holding the substrate, and by rotating the hand, the front surface and the rear surface of the substrate can be inverted; and an injection mechanism that can inject a cleaning liquid onto the substrate when the substrate is inverted by the transport mechanism.

Description

Substrate processing equipment and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method.

In recent years, as the integration of semiconductor devices has progressed, the wiring of circuits has become finer and the distance between wirings has become narrower. In the manufacture of semiconductor devices, many types of materials are repeatedly formed on a silicon wafer in the form of a film to form a laminated structure. In order to form this laminated structure, a technique for flattening the surface of the wafer is important. As a means for flattening the surface of such a wafer, a polishing apparatus (also referred to as a chemical mechanical polishing apparatus) that performs chemical mechanical polishing (CMP) is widely used.

This chemical mechanical polishing (CMP) apparatus generally includes a polishing table to which a polishing pad is attached, a top ring for holding a wafer, and a nozzle for supplying a polishing liquid onto the polishing pad. While supplying the polishing liquid from the nozzle onto the polishing pad, the wafer is pressed against the polishing pad by the top ring, and the top ring and the polishing table are moved relative to each other to polish the wafer and flatten its surface.

As a substrate processing device, in addition to such a CMP device, a device having a function of cleaning and further drying the polished wafer is known. The substrate processing apparatus described in Patent Document 1 has a plurality of parallel cleaning lines in order to realize high throughput.

JP-A-2018-6549

As described above, in the substrate processing apparatus, the wafer polished by the CMP apparatus is conveyed to the cleaning unit, and the wafer is cleaned and dried in the cleaning unit. Here, some polishing liquids used in the CMP apparatus adhere to the wafer over time. In such a case, the wafer cleaning efficiency is improved by quickly cleaning the wafer after polishing by the CMP apparatus. Can be enhanced.

The present invention has been made in view of the above circumstances, and one of the objects of the present invention is to propose a substrate processing apparatus and a substrate processing method capable of improving the cleaning efficiency of a substrate.

According to one embodiment of the present invention, a substrate processing apparatus is proposed, in which the substrate processing apparatus includes a polishing portion for polishing the substrate, a cleaning portion for cleaning the polished substrate, and the polishing of the substrate. A transport mechanism for transporting from a portion to the cleaning portion, which has a hand for holding the substrate and is configured so that the front surface and the back surface of the substrate can be inverted by rotating the hand. It includes a mechanism and an injection mechanism capable of injecting a cleaning liquid onto the substrate when the substrate is inverted by the transport mechanism.

According to another embodiment of the present invention, a substrate processing method is proposed, in which the substrate processing method involves a polishing step of polishing a substrate and an inversion of the polished substrate between the front surface and the back surface of the substrate. Includes a transport step of transporting the substrate to the cleaning unit, an injection step of injecting a cleaning liquid onto the substrate when the substrate is inverted in the transport step, and a step of cleaning the substrate in the cleaning unit.

According to one embodiment of the present invention, a substrate processing apparatus is proposed, wherein the substrate processing apparatus includes a polishing portion for polishing a substrate, a plurality of cleaning lines for cleaning the polished substrate, and the plurality of cleaning lines. A plurality of transport mechanisms for transporting the substrate in each cleaning line of the cleaning line, and the plurality of cleaning lines are arranged in series, and the substrate is moved in the first direction and delivered to any of the plurality of transport mechanisms. It is provided with a cleaning unit having a wafer station configured in the above, and an injection mechanism capable of injecting a cleaning liquid onto a substrate moving in the first direction by the wafer station.

According to one embodiment of the present invention, a substrate processing method is proposed, wherein the substrate processing method includes a polishing step for polishing a substrate and a wafer station in which the polished substrate is arranged in series with a plurality of cleaning lines. A step of positioning the substrate, a step of moving the substrate in the first direction by the wafer station, and a step of transferring the substrate to one of a plurality of transfer mechanisms for transporting the substrate in each of the plurality of cleaning lines, and the wafer It includes an injection step of injecting a cleaning liquid onto the substrate moving in the first direction by a station, and a step of cleaning the substrate in any one of the plurality of cleaning lines.

FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a perspective view schematically showing the first polishing apparatus. FIG. 3 is a side view showing a transfer robot (convey mechanism). FIG. 4 is a schematic view for explaining the injection of the cleaning liquid by the injection mechanism onto the wafer inverted by the transfer robot. FIG. 5 is a flowchart showing an example of the substrate processing method of the present embodiment. FIG. 6 is a plan view showing the overall configuration of the substrate processing apparatus according to the embodiment of the present invention. FIG. 7 is a side view of the substrate processing apparatus shown in FIG. 6 as viewed from the cleaning unit side. FIG. 8 is a perspective view schematically showing the first polishing apparatus. FIG. 9 is a side view showing a transfer robot (transfer mechanism). FIG. 10 is a perspective view showing the internal configuration of the wafer station of the first cleaning unit. FIG. 11 is a perspective view showing the internal configuration of the wafer station of the second cleaning unit. FIG. 12 is a diagram for explaining the injection of the cleaning liquid onto the wafer by the first nozzle of the injection mechanism. FIG. 13 is a diagram for explaining the injection of the cleaning liquid onto the wafer by the second nozzle of the injection mechanism. FIG. 14 is a flowchart showing an example of the substrate processing method of the present embodiment. FIG. 15 is a schematic view showing a polishing portion transport mechanism in a modified example.

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. However, the drawings used are schematic views. Therefore, the size, position, shape, and the like of the illustrated parts may differ from the size, position, shape, and the like in an actual device. Further, in the following description and the drawings used in the following description, the same reference numerals are used for parts that can be configured in the same manner, and duplicate description is omitted.

<Embodiment-1>
FIG. 1 is a plan view showing an overall configuration of a substrate processing apparatus according to an embodiment of the present invention. As shown in FIG. 1, the substrate processing apparatus 10-1 in the present embodiment includes a housing having a substantially rectangular shape in a plan view, and the inside of the housing has a load / unload portion 11-1 and a polishing portion 12- by a partition wall. It is divided into 1 and a cleaning unit 13-1 and a transport unit 14-1. The load / unload section 11-1, the polishing section 12-1, the cleaning section 13-1, and the transport section 14-1 are assembled independently and exhausted independently. Further, the substrate processing apparatus 10-1 has a control unit 15-1 (control) that controls the operations of the load / unload unit 11-1, the polishing unit 12-1, the cleaning unit 13-1, and the transport unit 14-1. (Also called a board) is provided.

The load / unload section 11-1 includes a plurality of (four in the illustrated example) front load section 113-1 on which a wafer cassette for stocking a large number of wafers (boards) W is placed. These front load portions 113-1 are arranged adjacent to each other in the width direction (direction perpendicular to the longitudinal direction) of the substrate processing apparatus 10-1. An open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Enhanced Pod) can be mounted on the front load unit 113-1. Here, SMIF and FOUP are closed containers that can maintain an environment independent of the external space by storing the wafer cassette inside and covering it with a partition wall.

Further, in the load / unload section 11-1, a traveling mechanism 112-1 is laid along the arrangement direction of the front loading section 113-1, and the front loading section 113-1 is laid on the traveling mechanism 112-1. A transfer robot 111-1 that can move along the arrangement direction of the above is installed. The transfer robot 111-1 can access the wafer cassette mounted on the front load portion 113-1 by moving on the traveling mechanism 112-1. The transfer robot 111-1 has two upper and lower hands. For example, the upper hand is used when returning the wafer W to the wafer cassette, and the lower hand is used when transferring the wafer W before polishing. You can use it to use the upper and lower hands properly.
Instead of this, the wafer W may be conveyed with only a single hand.

The transport section 14-1 is a region for transporting the wafer before polishing from the load / unload section 11-1 to the polishing section 12-1, and is provided so as to extend along the longitudinal direction of the substrate processing apparatus 10-1. Has been done. As the transport unit 14-1, for example, a motor drive mechanism using a ball screw or an air cylinder is used.

The polishing unit 12-1 is a region where the wafer W is polished, and has a first polishing unit 20a-1, a second polishing unit 20b-1, and a polishing unit transfer mechanism 22-1. .. The first polishing unit 20a-1 has a first polishing device 21a-1 and a second polishing device 21b-1, and the second polishing unit 20b-1 has a third polishing device 21c-1 and a fourth polishing device. It has 21d-1 and. The polishing unit transfer mechanism 22-1 is arranged so as to be adjacent to each of the transfer unit 14-1 and the first polishing unit 20a-1 and the second polishing unit 20b-1. The polishing unit transfer mechanism 22-1 is arranged between the cleaning unit 13-1 and the first polishing unit 20a-1 and the second polishing unit 20b-1 in the width direction of the substrate processing device 10-1.

The first polishing device 21a-1, the second polishing device 21b-1, the third polishing device 21c-1, and the fourth polishing device 21d-1 are arranged along the longitudinal direction of the substrate processing device 10-1. .. Since the second polishing device 21b-1, the third polishing device 21c-1, and the fourth polishing device 21d-1 have the same configuration as the first polishing device 21a-1, the first polishing device is described below. 21a-1 will be described.

FIG. 2 is a perspective view schematically showing the first polishing apparatus 21a-1. The first polishing device 21a-1 has a polishing table 101a-1 to which a polishing pad 102a-1 having a polishing surface is attached, and a polishing pad 102a-1 that holds the wafer W and holds the wafer W on the polishing table 101a-1. A top ring 25a-1 for polishing while pressing against, and a polishing liquid supply nozzle 104a-1 for supplying a polishing liquid (also referred to as slurry) or a dressing liquid (for example, pure water) to the polishing pad 102a-1. , A dresser (not shown) for dressing the polished surface of the polishing pad 102a-1 and a mixed gas or liquid (for example, pure water) of a liquid (for example, pure water) and a gas (for example, nitrogen gas) are atomized. It has an atomizer (not shown) that sprays onto the polished surface.

The top ring 25a-1 is supported by the top ring shaft 103a-1. A polishing pad 102a-1 is attached to the upper surface of the polishing table 101a-1, and the upper surface of the polishing pad 102a-1 constitutes a polishing surface for polishing the wafer W. A fixed whetstone can be used instead of the polishing pad 102a-1. The top ring 25a-1 and the polishing table 101a-1 are configured to rotate about their axis, as indicated by the arrows in FIG. The wafer W is held on the lower surface of the top ring 25a-1 by vacuum suction. At the time of polishing, the polishing liquid is supplied from the polishing liquid supply nozzle 104a-1 to the polishing surface of the polishing pad 102a-1, and the wafer W to be polished is pressed against the polishing surface by the top ring 25a-1 to be polished.

With reference to FIG. 1, the top ring 25a-1 of the first polishing device 21a-1 moves between the polishing position and the first substrate transport position TP1 by the swing operation of the top ring head. The wafer is delivered to the first polishing apparatus 21a-1 at the first substrate transfer position TP1. Similarly, the top rings of the second to fourth polishing devices 21b-1 to 21d-1 move between the polishing position and the second to fourth substrate transport positions TP2 to TP4 by the swing operation of the top ring head, respectively. , The transfer of the wafer to the second to fourth polishing devices 21b-1 to 21d-1 is performed at the second to fourth substrate transfer positions TP2 to TP4.

The polishing unit transfer mechanism 22-1 has a first transfer unit 24a-1 that transfers the wafer W to the first polishing unit 20a-1 and a second transfer unit 24b-that conveys the wafer W to the second polishing unit 20b-1. It has 1 and. Further, the polishing unit transfer mechanism 22-1 is arranged between the first transfer unit 24a-1 and the second transfer unit 24b-1, and is arranged between the transfer unit 14-1 and the first transfer unit 24a-1 and the second transfer unit 24a-1. It has a transfer robot (transfer mechanism) 23-1 that transfers a wafer to and from the unit 24b-1. In the illustrated example, the transfer robot 23-1 is arranged substantially in the center of the housing of the substrate processing apparatus 10-1.

FIG. 3 is a side view showing the transfer robot (convey mechanism) 23-1. As shown in FIG. 3, the transfer robot 23-1 inverts the hand 231-1 holding the wafer W and the hand 231-1 upside down (that is, inverts the front surface and the back surface of the wafer W). The reversing mechanism 234-1, the telescopic arm 232-1 that supports the wafer W, the arm vertical movement mechanism that moves the arm 232-1 up and down, and the arm rotation that rotates the arm 232-1 around the vertical axis. It has a robot body 233-1 including a mechanism. The robot body 233-1 is attached so as to hang from the ceiling frame of the polishing portion 12-1. The reversing mechanism 234-1 is configured so that the hand 231-1 can be rotated by a drive mechanism such as a motor to turn the hand 231-1 upside down.

In the present embodiment, the hand 231-1 is accessible to the transport unit 14-1. The hand 231-1 is also accessible to the first transport unit 24a-1 and the second transport unit 24b-1 of the polishing unit 12-1. Therefore, the wafer W continuously transferred from the transfer unit 14-1 to the polishing unit 12-1 is distributed to the first transfer unit 24a-1 and the second transfer unit 24b-1 by the transfer robot 23-1. The first transfer unit 24a-1 transfers the wafer W to the first polishing unit 20a-1, and the second transfer unit 24b-1 transfers the wafer W to the second polishing unit 20b-1. Further, the hand 231-1 is accessible to the cleaning unit 13-1. As a result, the wafers W polished by the first to fourth polishing devices 21a-1 to 21d-1 are transferred from the first transfer units 24a-1 and 24b-1 to the transfer robot 23-1 again, and subsequently. It is delivered from the transfer robot 23-1 to the cleaning unit 13-1.

Further, in the present embodiment, the polishing unit transfer mechanism 22-1 has an injection mechanism 26-1 configured to be capable of injecting a cleaning liquid onto the wafer W held by the transfer robot 23-1 (). Not shown in FIG. 1). The injection mechanism 26-1 is controlled by the control unit 15-1. As an example, the injection mechanism 26-1 includes a nozzle 261-1 that injects the cleaning liquid 262-1, a cleaning liquid adjusting mechanism 263-1 that can adjust the cleaning liquid supplied to the nozzle 261-1, and a first cleaning liquid supply source 264. It has -1 and a second cleaning liquid supply source 265-1. As the nozzle 261-1, a spray nozzle or a droplet nozzle can be adopted. The injection mechanism 26-1 may have a sprayer or the like in place of or in addition to the nozzle 261-1 as long as it can inject the cleaning liquid 262-1 onto the wafer W.

In this embodiment, the nozzle 261-1 is fixed to a frame (not shown) of the polishing portion 12-1. However, the nozzle 261-1 may be configured to be movable by a moving mechanism (not shown). Here, the nozzle 261-1 is preferably arranged above the target (wafer W or the hand 231-1 of the transfer robot 23-1) for injecting the cleaning liquid. As a result, it is possible to prevent the cleaning port of the nozzle 261-1 from being contaminated by the scattered matter from the wafer W or the hand 231-1 of the transfer robot 23-1. Further, as an example, the nozzle 261-1 is configured so that the injection center direction of the cleaning liquid is inclined with respect to the vertical direction and the horizontal direction. Further, as an example, the nozzle 261-1 is arranged horizontally away from the object to which the cleaning liquid is sprayed. As a result, when the cleaning liquid or the like is unintentionally dropped from the nozzle 261-1, it is possible to prevent the dropped object from hitting the wafer W. Further, as an example, in the nozzle 261-1, the tip of the nozzle 261-1 is drawn out from the robot body 233-1 of the transfer robot 23-1 (particularly, the lead wire of reference numeral 233-1 in FIGS. 3 and 4 is drawn out. It is better to arrange it so that it faces the surface). Further, as an example, the nozzle 261-1 may be arranged so that the tip of the nozzle 261-1 faces the root of the hand 231-1. As a result, the reversing mechanism 234-1 and the arm 232-1 can be suitably cleaned by the injection liquid injected from the injection mechanism 26-1. Further, the nozzle 261-1 may be configured to inject the cleaning liquid 262-1 into a cone shape (conical shape) or a fan shape. In this case, as an example, the injection mechanism 26-1 is such that the range (diameter) of the cleaning liquid that is injected in a cone shape or a fan shape and acts on the wafer W is equal to the diameter of the wafer W or slightly larger than the diameter of the wafer W. It is composed. As a result, the cleaning liquid 262-1 can be sprayed over a wide range from the nozzle 261-1, and the cleaning liquid 262-1 can be uniformly applied to the target.

In the present embodiment, the first cleaning liquid supply source 264-1 and the second cleaning liquid supply source 265-1 are connected to the nozzle 261-1 via the cleaning liquid adjusting mechanism 263-1. Different cleaning liquids are stored in the first cleaning liquid supply source 264-1 and the second cleaning liquid supply source 265-1. As an example, pure water is stored as the first cleaning liquid in the first cleaning liquid supply source 264-1, and rinse (hydrofluoric acid, ammonia, etc.) is stored as the second cleaning liquid in the second cleaning liquid supply source 265-1. At least one of the first cleaning liquid and the second cleaning liquid may be the same as the cleaning liquid used in the cleaning unit 13-1. Further, at least one of the first cleaning liquid and the second cleaning liquid may be different from the cleaning liquid used in the cleaning unit 13-1. The nozzle 261-1 is not limited to the one in which two cleaning liquid supply sources are connected, and one or three or more cleaning liquid supply sources may be connected. The cleaning liquid (for example, the first cleaning liquid and the second cleaning liquid) injected from the injection mechanism 26-1 is selected based on the residue to be removed of the wafer W. As an example, only the cleaning liquid supply source in which pure water is stored may be connected to the nozzle 261-1. The cleaning liquid adjusting mechanism 263-1 supplies the cleaning liquid from the first cleaning liquid supply source 264-1 and the second cleaning liquid supply source 265-1 to the nozzle 261-1 according to a predetermined recipe. Further, the control unit 15-1 may supply the cleaning liquid from the first cleaning liquid supply source 264-1 and the second cleaning liquid supply source 265-1 to the nozzle 261-1 according to the setting through the setting unit 15c-1. .. The cleaning liquid adjusting mechanism 263-1 switches the cleaning liquid supplied to the nozzle 261-1 between the first cleaning liquid from the first cleaning liquid supply source 264-1 and the second cleaning liquid from the second cleaning liquid supply source 265-1. May be supplied. Further, the cleaning liquid adjusting mechanism 263-1 may supply the cleaning liquid to the nozzle 261-1 by adjusting the mixing ratio of the first cleaning liquid and the second cleaning liquid.

Further, in the present embodiment, the injection mechanism 26-1 is realized by a two-fluid nozzle mechanism, and a carrier gas supply source 266-1 for supplying a carrier gas such as nitrogen is connected to the nozzle 261-1. ing. By ejecting the cleaning liquid and the carrier gas at high speed, a two-fluid jet flow in which the cleaning liquid exists as fine droplets (mist) in the carrier gas is generated. By ejecting this two-fluid jet flow toward the surface of the wafer W and causing it to collide, particles and the like can be suitably removed (cleaned). The injection mechanism 26-1 may be capable of adjusting the injection amount of the carrier gas, including cleaning without the carrier gas. Further, in the present disclosure, "injection of cleaning liquid" may include injection accompanied by a carrier gas.

Refer to Fig. 1 again. The cleaning unit 13-1 is an area for cleaning the polished wafer, and includes a wafer station 33a-1 as a temporary stand for temporarily placing the substrate and four cleaning modules 311a-1 to clean the polished substrate. 314a-1 (hereinafter, may be referred to as a primary to quaternary cleaning module) and a transfer unit 32a-1 for transferring a wafer between the wafer station 33a-1 and the cleaning modules 311a-1 to 314a-1. , Is equipped. The wafer station 33a-1 and the plurality of cleaning modules 311a-1 to 314a-1 are arranged in series along the longitudinal direction of the substrate processing apparatus 10-1.

As a cleaning machine for the primary cleaning module 311a-1 and the secondary cleaning module 312a-1, for example, roll-shaped sponges arranged vertically are rotated and pressed against the front surface and the back surface of the wafer to press the front surface and the back surface of the wafer. A roll-type washer for cleaning can be used. Further, as the cleaning machine of the tertiary cleaning module 313a-1, for example, a pencil type cleaning machine in which a hemispherical sponge is rotated and pressed against the wafer to perform cleaning can be used. As the cleaning machine for the quaternary cleaning module 314a-1, for example, a pencil type cleaning machine is used in which the back surface of the wafer can be rinsed and the surface of the wafer is cleaned by pressing a hemispherical sponge while rotating it. be able to. The washing machine of the quaternary washing module 314a-1 is provided with a stage for rotating the chucked wafer at high speed, and has a function (spin dry function) of drying the washed wafer by rotating the wafer at high speed. There is. In each cleaning module 311a-1 to 314a-1, in addition to the roll type washer and the pencil type washer described above, a megasonic type washer that irradiates the cleaning liquid with ultrasonic waves for cleaning is provided. It may be additionally provided.

The control unit 15-1 is provided to control each component of the substrate processing device 10-1. The control unit 15-1 may be configured as a microcomputer that includes a CPU, a memory, and the like and realizes a predetermined function by using software, or may be configured as a hardware circuit that performs dedicated arithmetic processing. The control unit 15-1 of the present embodiment includes a calculation unit 15a-1, a memory 15b-1, and a setting unit 15c-1. The setting unit 15c-1 functions as a user interface and is used to set various setting values (setting information) by an external operation. Specifically, the setting unit 15c-1 includes an operation button (not shown), a touch panel, and the like, and various setting values set in the setting unit 15c-1 are stored in the memory 15b-1.

Next, the operation of the substrate processing device 10-1 will be described. In the substrate processing apparatus 10-1, first, the wafer W before polishing is taken out from the wafer cassette of the front load section 113-1 by the transfer robot 111-1 of the load / unload section 11-1, and the transfer section 14-1 Handed over to. Subsequently, the wafer W is delivered from the transfer unit 14-1 to the transfer robot 23-1, and the wafer W is turned upside down together with the hand 231-1 by the reversing mechanism 234-1 of the transfer robot 23-1. .. As a result, the processing surface of the wafer W is directed downward. Next, the transfer robot 23-1 delivers the transfer to the first transfer unit 24a-1 or the second transfer unit 24b-1, and the first transfer unit 24a-1 or the second transfer unit 24b-1 first to fourth. The wafer W is carried into the polishing devices 21a-1 to 21d-1. Then, in the first to fourth polishing devices 21a-1 to 21d-1, the wafer W is attracted and held by the top ring and is polished by abutting with the polishing pad 102a-1.

After the polishing of the wafer W is completed, the polished wafer W is received from the first polishing devices 21a-1 to 21d-1 to the transfer robot 23-1 through the first transfer unit 24a-1 or the second transfer unit 24b-1. Passed. Subsequently, the wafer W is turned upside down together with the hand 231-1 by the reversing mechanism 234-1 of the transfer robot 23-1. As a result, the processing surface of the wafer W is directed upward.

In the present embodiment, when the polished wafer W is inverted by the transfer robot 23-1, the cleaning liquid is injected onto the wafer W by the injection mechanism 26-1. By spraying the polishing liquid while inverting the wafer W, the cleaning liquid can act on the entire surface of the wafer W. At this time, the control unit 15-1 is at a position where the wafer W is along the vertical direction (vertical position) when the cleaning liquid is injected by the injection mechanism 26-1, that is, the plate surface of the wafer W faces in the horizontal direction. At the position, it may be stopped for a first hour (eg, a few seconds) (see FIG. 4). In this way, the cleaning liquid can be poured over the plate surface of the wafer W, and foreign matter can be efficiently removed from the wafer W. Further, the control unit 15-1 may stop the wafer W at the vertical position for a second time (for example, several seconds) after the injection of the cleaning liquid by the injection mechanism 26-1 is completed. As a result, excess cleaning liquid and foreign matter can be removed from the plate surface of the wafer W.

Further, when the cleaning liquid is injected from the injection mechanism 26-1, the control unit 15-1 may invert the wafer W a plurality of times. The number of times the wafer W is inverted may be a predetermined number of times (for example, twice), or may be set through the setting unit 15c-1. Further, the control unit 15-1 may adjust the speed at which the wafer W is inverted by the inversion mechanism 234-1. For example, the control unit 15-1 controls the inversion mechanism 234-1 so that the wafer W is inverted at the first inversion rate when the wafer W before processing by the polishing unit 12-1 is inverted, and the polishing unit 12-1 When inverting the wafer W after the treatment according to the above method, the inverting mechanism 234-1 may be controlled so that the wafer W is inverted at a second inverting speed slower than the first speed. As a result, the wafer W before polishing can be quickly inverted to speed up the processing in the substrate processing apparatus 10-1, and the wafer W after polishing can be inverted relatively slowly to transfer the cleaning liquid to the wafer W. Can act. Further, the inversion speed of the wafer W may be a predetermined speed or may be set through the setting unit 15c-1.

As described above, in the substrate processing apparatus 10-1 of the present embodiment, before the wafer W is cleaned by the cleaning unit 13-1, the cleaning liquid is applied to the wafer W when the wafer W is inverted by the transfer robot 23-1. The wafer W can be pre-cleaned by acting. Further, by using the reversing mechanism 234-1 of the transfer robot 23-1 that inverts the wafer W in order to attach the wafer W to the top ring 25a-1, a mechanism for newly moving the wafer W for pre-cleaning is provided. The cleaning liquid can be preferably applied to the wafer W without being provided.

Then, the wafer W is handed over from the transfer robot 23-1 to the cleaning unit 13-1, and cleaning and drying are performed in the cleaning unit 13-1. After the cleaning and drying processing in the cleaning unit 13-1 is completed, the wafer W is taken out from the cleaning unit 13-1 to the load / unload unit 11-1, and the substrate processing in the substrate processing apparatus 10-1 is completed. After the wafer W is delivered from the transfer robot 23-1 to the cleaning unit 13-1, the cleaning liquid may be injected into the hand 231-1 of the transfer robot 23-1 by the injection mechanism 26-1. In this way, the injection mechanism 26-1 can also clean the hand 231-1 of the transfer robot 23-1. At this time, the cleaning liquid may be injected from the injection mechanism 26-1 while the hand 231-1 is inverted by the reversing mechanism 234-1.

Although it is a duplicate explanation, the above-mentioned substrate processing apparatus 10-1 executes the substrate processing method shown in FIG. That is, the wafer W is polished by the polishing unit 12-1 (step S12-1), and the polished wafer W is inverted and conveyed by the transfer robot (transfer mechanism) 23-1 (step S14-1). Further, when the polished wafer W is inverted by the transfer robot 23-1, the cleaning liquid is injected onto the wafer W from the injection mechanism 26-1 (step S16-1). As a result, the wafer W can be pre-cleaned. Then, the wafer W is delivered to the cleaning unit 13-1 by the transfer robot 23-1, and the wafer W is cleaned by the cleaning unit 13-1 (step S18-1). At this time, since the cleaning liquid is sprayed onto the wafer W in advance in step S16-1 to pre-clean the wafer W, the cleaning time in the cleaning unit 13-1 can be shortened. According to such a substrate processing method, the cleaning efficiency of the wafer W can be improved.

In the substrate processing apparatus 10-1 described above, when the wafer W is conveyed by the conveying section 14-1 and the load / unloading section 11-1, the processing surface comes into contact with the substrate processing apparatus 10-1 and becomes contaminated or damaged. The processing surface of the wafer W is turned upward so as not to prevent it. Further, when the wafer W is polished by the polishing unit 12-1, the wafer W is inverted by the transfer robot 23-1 so that the polishing liquid acts on the polishing pad 102a-1 so that the processing surface faces downward. It is said that. Then, when the polishing by the polishing unit 12-1 is completed, the wafer W is turned over again by the transfer robot 23-1 so that the processed surface is not contaminated or damaged, and the processed surface is turned upward to the cleaning unit 13-1. Is transported. In such a substrate processing apparatus 10-1, the polishing liquid or polishing residue remaining on the wafer W due to polishing by the polishing unit 12-1 may spread over the entire surface of the wafer W due to the rotation of the wafer W by the transfer robot 23-1. There is. Further, the polishing liquid or the polishing residue may adhere to the transfer robot 23-1, or the polishing liquid or the polishing residue attached to the transfer robot 23-1 may contaminate the wafer W from the next time onward. The polishing liquid used in the polishing unit 12-1 is generally highly viscous, and when it dries over time, the polishing liquid solidifies and becomes difficult to remove. On the other hand, in the substrate processing apparatus 10-1 according to the present embodiment, when the polished wafer W is inverted by the transfer robot 23-1, the injection mechanism 26-that can inject the cleaning liquid onto the wafer W. 1 is provided. As a result, the cleaning liquid can be allowed to act on the wafer W and the transfer robot 23-1 at an early timing, and the polishing liquid or the polishing residue adhering to the wafer W and the transfer robot 23-1 can be suitably removed. Moreover, since the cleaning liquid can be applied to the wafer W with the rotation of the wafer W by the transfer robot 23-1, the cleaning liquid can be uniformly applied to the entire surface of the wafer W to clean the wafer W.

<Embodiment-2>
FIG. 6 is a plan view showing the overall configuration of the substrate processing apparatus according to the embodiment of the present invention, and FIG. 7 is a side view of the polishing apparatus shown in FIG. 6 as viewed from the cleaning unit side. As shown in FIGS. 6 and 7, the substrate processing apparatus 10-2 in the present embodiment includes a housing having a substantially rectangular shape in a plan view, and the inside of the housing is polished with a load / unload portion 11-2 by a partition wall. It is divided into a section 12-2, a cleaning section 13-2, and a transport section 14-2. The load / unload section 11-2, the polishing section 12-2, the cleaning section 13-2, and the transport section 14-2 are assembled independently and exhausted independently. Further, the substrate processing apparatus 10-2 has a control unit 15-2 (control) that controls the operations of the load / unload unit 11-2, the polishing unit 12-2, the cleaning unit 13-2, and the transport unit 14-2. It is also called a board).

The load / unload section 11-2 includes a plurality of (four in the illustrated example) front load sections 113-2 on which a wafer cassette for stocking a large number of wafers (boards) W is placed. These front load portions 113-2 are arranged adjacent to each other in the width direction (direction perpendicular to the longitudinal direction) of the substrate processing apparatus 10-2. An open cassette, a SMIF (Standard Manufacturing Interface) pod, or a FOUP (Front Opening Enhanced Pod) can be mounted on the front load unit 113-2. Here, SMIF and FOUP are closed containers that can maintain an environment independent of the external space by storing the wafer cassette inside and covering it with a partition wall.

Further, in the load / unload portion 11-2, a traveling mechanism 112-2 is laid along the arrangement direction of the front loading portion 113-2, and the front loading portion 113-2 is laid on the traveling mechanism 112-2. A transfer robot 111-2 that can move along the arrangement direction of is installed. The transfer robot 111-2 can access the wafer cassette mounted on the front load portion 113-2 by moving on the traveling mechanism 112-2. The transfer robot 111-2 has two upper and lower hands. For example, the upper hand is used when returning the wafer W to the wafer cassette, and the lower hand is used when transferring the wafer W before polishing. You can use it to use the upper and lower hands properly.
Instead of this, the wafer W may be conveyed with only a single hand.

The transport section 14-2 is a region for transporting the wafer before polishing from the load / unload section 11-2 to the polishing section 12-2, and is provided so as to extend along the longitudinal direction of the substrate processing apparatus 10-2. Has been done. As the transport unit 14-2, for example, a motor drive mechanism using a ball screw or an air cylinder is used.

The polishing unit 12-2 is a region where the wafer W is polished, and has a first polishing unit 20a-2, a second polishing unit 20b-2, and a polishing unit transfer mechanism 22-2. .. The first polishing unit 20a-2 has a first polishing device 21a-2 and a second polishing device 21b-2, and the second polishing unit 20b-2 has a third polishing device 21c-2 and a fourth polishing device. It has 21d-2 and. The polishing unit transfer mechanism 22-2 is arranged so as to be adjacent to each of the transfer unit 14-2, the first polishing unit 20a-2, and the second polishing unit 20b-2. The polishing unit transfer mechanism 22-2 is arranged between the cleaning unit 13-2 and the first polishing unit 20a-2 and the second polishing unit 20b-2 in the width direction of the substrate processing device 10-2.

The first polishing device 21a-2, the second polishing device 21b-2, the third polishing device 21c-2, and the fourth polishing device 21d-2 are arranged along the longitudinal direction of the substrate processing device 10-2. .. Since the second polishing device 21b-2, the third polishing device 21c-2, and the fourth polishing device 21d-2 have the same configuration as the first polishing device 21a-2, the first polishing device will be described below. 21a-2 will be described.

FIG. 8 is a perspective view schematically showing the first polishing apparatus 21a-2. The first polishing device 21a-2 has a polishing table 101a-2 to which a polishing pad 102a-2 having a polishing surface is attached, and a polishing pad 102a-2 that holds the wafer W and holds the wafer W on the polishing table 101a-2. A top ring 25a-2 for polishing while pressing against, and a polishing liquid supply nozzle 104a-2 for supplying a polishing liquid (also called a slurry) or a dressing liquid (for example, pure water) to the polishing pad 102a-2. , A dresser (not shown) for dressing the polished surface of the polishing pad 102a-2 and a mixed gas or liquid (for example, pure water) of a liquid (for example, pure water) and a gas (for example, nitrogen gas) are atomized. It has an atomizer (not shown) that sprays onto the polished surface.

The top ring 25a-2 is supported by the top ring shaft 103a-2. A polishing pad 102a-2 is attached to the upper surface of the polishing table 101a-2, and the upper surface of the polishing pad 102a-2 constitutes a polishing surface for polishing the wafer W. A fixed whetstone can be used instead of the polishing pad 102a-2. The top ring 25a-2 and the polishing table 101a-2 are configured to rotate about their axis, as indicated by the arrows in FIG. The wafer W is held on the lower surface of the top ring 25a-2 by vacuum suction. At the time of polishing, the polishing liquid is supplied from the polishing liquid supply nozzle 104a-2 to the polishing surface of the polishing pad 102a-2, and the wafer W to be polished is pressed against the polishing surface by the top ring 25a-2 to be polished.

With reference to FIG. 6, the top ring 25a-2 of the first polishing device 21a-2 moves between the polishing position and the first substrate transport position TP1 by the swing operation of the top ring head. The wafer is delivered to the first polishing apparatus 21a-2 at the first substrate transfer position TP1. Similarly, the top rings of the second to fourth polishing devices 21b-2 to 21d-2 move between the polishing position and the second to fourth substrate transport positions TP2 to TP4 by the swing operation of the top ring head, respectively. Wafers are delivered to the 2nd to 4th polishing devices 21b-2 to 21d-2 at the 2nd to 4th substrate transfer positions TP2 to TP4.

The polishing unit transfer mechanism 22-2 includes a first transfer unit 24a-2 that transfers the wafer W to the first polishing unit 20a-2 and a second transfer unit 24b-that conveys the wafer W to the second polishing unit 20b-2. 2 and. Further, the polishing unit transport mechanism 22-2 is arranged between the first transport unit 24a-2 and the second transport unit 24b-2, and the transport unit 14-2, the first transport unit 24a-2, and the second transport unit 22-2 are arranged. It has a transfer robot (transfer mechanism) 23-2 that transfers a wafer to and from the unit 24b-2. In the illustrated example, the transfer robot 23-2 is arranged substantially in the center of the housing of the substrate processing apparatus 10-2.

FIG. 9 is a side view showing the transfer robot (convey mechanism) 23-2. As shown in FIG. 9, the transfer robot 23-2 inverts the hand 231-2 holding the wafer W and the hand 231-2 upside down (that is, inverts the front surface and the back surface of the wafer W). The reversing mechanism 234-2, the telescopic arm 232-2 that supports the wafer W, the arm vertical movement mechanism that moves the arm 232-2 up and down, and the arm rotation that rotates the arm 232-2 around the vertical axis. It has a robot body 233-2 including a mechanism. The robot body 233-2 is attached so as to hang from the ceiling frame of the polishing portion 12-2.

In the present embodiment, the hand 231-2 is accessible to the transport unit 14-2. Further, the hand 231-2 is also accessible to the first transport unit 24a-2 and the second transport unit 24b-2 of the polishing unit 12-2. Therefore, the wafer W continuously transferred from the transfer unit 14-2 to the polishing unit 12-2 is distributed to the first transfer unit 24a-2 and the second transfer unit 24b-2 by the transfer robot 23-2. The first transport unit 24a-2 transports the wafer W to the first polishing unit 20a-2, and the second transport unit 24b-2 transports the wafer W to the second polishing unit 20b-2. Further, the hand 231-2 is accessible to the cleaning unit 13-2. As a result, the wafers W polished by the first to fourth polishing devices 21a-2 to 21d-2 are transferred from the first transfer units 24a-2 and 24b-2 to the transfer robot 23-2 again, and subsequently. It is delivered from the transfer robot 23-2 to the cleaning unit 13-2.

As shown in FIGS. 6 and 7, the cleaning unit 13-2 is a region for cleaning the wafer after polishing, and the first cleaning unit 30a-2 and the second cleaning unit 30b-2 arranged in two upper and lower stages are arranged. have. The above-mentioned transport unit 14-2 is arranged between the first cleaning unit 30a-2 and the second cleaning unit 30b-2. Since the first cleaning unit 30a-2, the transport unit 14-2, and the second cleaning unit 30b-2 are arranged so as to overlap each other in the vertical direction, an advantage that the footprint is small can be obtained.

As shown in FIGS. 6 and 7, the first cleaning unit 30a-2 includes a plurality of (four in the illustrated example) cleaning modules 311a-2, 312a-2, 313a-2, 314a-2 and a wafer. It has a station 33a-2, and a cleaning unit transfer mechanism 32a-2 for transferring the wafer W between the cleaning modules 311a-2 to 314a-2 and the wafer station 33a-2. The plurality of cleaning modules 311a-2 to 314-2 (first cleaning line) a and the wafer station 33a-2 are arranged in series along the longitudinal direction of the substrate processing apparatus 10-2. A filter fan unit (not shown) having a clean air filter is provided above each cleaning module 311a-2 to 314a-2, and clean air from which particles have been removed by the filter fan unit is always downward. It is blowing out toward. Further, the inside of the first cleaning unit 30a-2 is always maintained at a pressure higher than that of the polishing unit 12-2 in order to prevent the inflow of particles from the polishing unit 12-2.

Similarly, the second cleaning unit 30b-2 includes a plurality of (four in the illustrated example) cleaning modules 311b-2, 312b-2, 313b-2, 314b-2, and a wafer station 33b-2, respectively. It has a cleaning unit transport mechanism 32b-2 that transports the wafer W between the cleaning modules 311b-2 to 314b-2 and the wafer station 33b-2. The plurality of cleaning modules 311b-2 to 314b-2 and the wafer station 33b-2 are arranged in series along the longitudinal direction of the substrate processing apparatus 10-2. A filter fan unit (not shown) having a clean air filter is provided above each cleaning module 311b-2 to 314b-2, and clean air from which particles have been removed by the filter fan unit is always downward. It is blowing out toward. Further, the inside of the second cleaning unit 30b-2 is always maintained at a pressure higher than that of the polishing unit 12-2 in order to prevent the inflow of particles from the polishing unit 12-2.

FIG. 10 is a perspective view showing the internal configuration of the wafer station 33a-2 of the first cleaning unit 30a-2. The wafer station 33a-2 functions as a temporary stand for the polished wafer W, moves the wafer W in the first direction (vertical direction in the example shown in FIG. 10), and delivers the wafer W to the cleaning unit transfer mechanism 32a-2. It is configured to be able to. The first direction is not limited to the vertical direction (vertical direction), and may be a horizontal direction, a vertical direction, or a direction inclined in the horizontal direction. Further, the first direction is a direction different from the transfer direction (for example, the horizontal direction) of the wafer W to the wafer station 33a-2 (stage 72-2) by the transfer robot 23-2 of the polishing unit 12-2, particularly perpendicular. It may be a direction. As shown in FIG. 10, the wafer station 33a-2 has a substantially rectangular parallelepiped shape, a stage 72-2 arranged inside the housing 71-2 and holding the wafer W, and a stage 72. It has a drive mechanism 75-2 that moves -2 up and down.

The housing 71-2 has a bottom plate, four side plates, and a top plate. Of the four side plates, a carry-in inlet 73-2 communicating with the polishing portion 12-2 is formed at the lower end portion of the side plate facing the polishing portion 12-2. The carry-in entrance 73-2 can be opened and closed by a shutter (not shown). The transfer robot 23-2 of the polishing unit 12-2 can access the inside of the housing 71-2 from the carry-in entrance 73-2, and can deliver the polished wafer W to the stage 72-2.

Further, among the four side plates, the remaining three side plates (that is, the side plates facing the cleaning unit transport mechanism 32a-2 and the left and right side plates) are cleaned at a height higher than the carry-in inlet 73-2. A wafer transfer opening 74-2 is formed for passing the arm of the unit transfer mechanism 32a-2. The wafer transfer opening 74-2 can be opened and closed by a shutter (not shown). The cleaning unit transfer mechanism 32a-2 of the first cleaning unit 30a-2 can access the inside of the housing 71-2 through the wafer transfer opening 74-2, and the wafer W has the wafer transfer opening 74-. It is delivered from the stage 72-2 to the cleaning unit transport mechanism 32a-2 of the first cleaning unit 30a-2 through 2.

As the drive mechanism 75-2, for example, a motor drive mechanism using a ball screw or an air cylinder is used. The stage 72-2 is fixed to the movable part of the drive mechanism 75-2, and the height position facing the carry-in inlet 73-2 and the wafer transfer opening 74-2 are supplied by the power supplied from the drive mechanism 75-2. It is moved up and down between the height position facing the.

Four pins 76-2 are provided on the outer periphery of the stage 72-2 so as to protrude upward. Therefore, the wafer W mounted on the stage 72-2 is supported on the stage 72-2 with its outer peripheral edge guided and positioned by the four pins 76-2. These pins 76-2 are formed from resins such as polypropylene (PP), polychlorotrifluoroethylene (PCTFE) and polyetheretherketone (PEEK). Further, in the present embodiment, the stage 72-2 is formed in a frame shape having an opening or a notch so as to expose and support the lower surface of the wafer W.

Further, in the present embodiment, the housing 71-2 of the wafer station 33a-2 is provided with an injection mechanism 90a-2 configured to be capable of injecting a cleaning liquid onto the wafer W held by the stage 72-2. (Not shown in FIG. 6). The injection mechanism 90a-2 is controlled by the control unit 15-2. As an example, the injection mechanism 90a-2 includes a first nozzle 91a-2 provided above the housing 71-2 and ejecting a cleaning liquid downward, and a first nozzle 91a-2 inside the housing 71-2. A second nozzle 92a-2 provided below 2 and ejecting the cleaning liquid upward, a cleaning liquid adjusting mechanism 93a-2 capable of adjusting the first nozzle 91a-2 and the cleaning liquid supplied to the second nozzle, and It has a first cleaning liquid supply source 94a-2 and a second cleaning liquid supply source 95a-2. As the first nozzle 91a-2 and the second nozzle 92a-2, a spray nozzle or a droplet nozzle can be adopted. The injection mechanism 26-2 may be capable of injecting the cleaning liquid onto the wafer W, and may have a sprayer or the like in place of or in addition to the first nozzle 91a-2 and the second nozzle 92a-2. May be good.

In the present embodiment, the first nozzle 91a-2 and the second nozzle 92a-2 are fixed to the frame of the housing 71-2. However, the first nozzle 91a-2 and the second nozzle 92a-2 may be configured to be movable by a moving mechanism (not shown). Here, the first nozzle 91a-2 is provided to inject the cleaning liquid onto the upper surface of the wafer W, and is above the target (wafer W) on which the cleaning liquid is to be injected, that is, the wafer transfer of the housing 71-2. It is preferable that the wafer is arranged above the opening 74-2. Further, the second nozzle 92a-2 is provided for injecting the cleaning liquid onto the lower surface of the wafer W, and is below the target (wafer W) on which the cleaning liquid is injected, that is, the carry-in inlet 73 of the housing 71-2. It should be placed below -2. Further, as an example, in the first nozzle 91a-2 and the second nozzle 92a-2, the injection center direction of the cleaning liquid is the first direction (up and down in the example shown in FIG. 10) in which the wafer W is conveyed by the stage 72-2. It is configured to incline at an acute angle with respect to the direction). Further, as an example, the injection mechanism 26-2 ejects the cleaning liquid in a cone shape or a fan shape so that the range (diameter) of the cleaning liquid acting on the wafer W is equal to the diameter of the wafer W or slightly larger than the diameter of the wafer W. It is good to have a configuration to make it. Further, as an example, the first nozzle 91a-2 and the second nozzle 92a-2 are arranged horizontally apart from the target (wafer W) on which the cleaning liquid is sprayed. As a result, when the cleaning liquid or the like is unintentionally dropped from the first nozzle 91a-2, it is possible to prevent the dropped object from hitting the wafer W. Further, it is possible to prevent the injection port of the second nozzle 92a-2 from being contaminated by the scattered matter from the wafer W. Further, the first nozzle 91a-2 and the second nozzle 92a-2 may be configured to inject the cleaning liquid into a cone shape (conical shape) or a fan shape. As a result, the cleaning liquid can be sprayed over a wide range from the nozzle, and the cleaning liquid can be uniformly applied to the target.

In the present embodiment, the first nozzle 91a-2 and the second nozzle 92a-2 are connected to the first cleaning liquid supply source 94a-2 and the second cleaning liquid supply source 95a-2 via the cleaning liquid adjusting mechanism 93a-2, respectively. Is connected. Different cleaning liquids are stored in the first cleaning liquid supply source 94a-2 and the second cleaning liquid supply source 95a-2. As an example, pure water is stored as the first cleaning liquid in the first cleaning liquid supply source 94a-2, and rinse (hydrofluoric acid, ammonia, etc.) is stored as the second cleaning liquid in the second cleaning liquid supply source 95a-2. At least one of the first cleaning liquid and the second cleaning liquid may be the same as the cleaning liquid used in the cleaning unit 13-2. Further, at least one of the first cleaning liquid and the second cleaning liquid may be different from the cleaning liquid used in the cleaning unit 13-2. The first nozzle 91a-2 and the second nozzle 92a-2 are not limited to those to which two cleaning liquid supply sources are connected, and one or three or more cleaning liquid supply sources may be connected. The cleaning liquid (for example, the first cleaning liquid and the second cleaning liquid) injected from the injection mechanism 90a-2 is selected based on the residue to be removed of the wafer W. As an example, only the cleaning liquid supply source in which pure water is stored may be connected to the first nozzle 91a-2 and the second nozzle 92a-2. The cleaning liquid adjusting mechanism 93a-2 transfers the cleaning liquid from the first cleaning liquid supply source 94a-2 and the second cleaning liquid supply source 95a-2 to the first nozzle 91a-2 and the second nozzle 92a-2 according to a predetermined recipe. Supply. Further, the control unit 15-2 applies the cleaning liquids from the first cleaning liquid supply source 94a-2 and the second cleaning liquid supply source 95a-2 to the first nozzle 91a-2 and the second nozzle according to the setting through the setting unit 15c-2. It may be supplied to 92a-2. The cleaning liquid adjusting mechanism 93a-2 supplies the cleaning liquid to the first nozzle 91a-2 and the second nozzle 92a-2 with the first cleaning liquid from the first cleaning liquid supply source 94a-2 and the second cleaning liquid supply source 95a-2. It may be supplied by switching with the second cleaning liquid from. Further, the cleaning liquid adjusting mechanism 93a-2 may supply the cleaning liquid to the first nozzle 91a-2 and the second nozzle 92a-2 by adjusting the mixing ratio of the first cleaning liquid and the second cleaning liquid.

Further, in the present embodiment, the injection mechanism 90a-2 is realized by a two-fluid nozzle mechanism, and the carrier gas supply source 96a- for supplying the carrier gas such as nitrogen to the nozzles 91a-2 and 92a-2. 2 is connected. By ejecting the cleaning liquid and the carrier gas at high speed, a two-fluid jet flow in which the cleaning liquid exists as fine droplets (mist) in the carrier gas is generated. By ejecting this two-fluid jet flow toward the surface of the wafer W and causing it to collide, particles and the like can be suitably removed (cleaned). The injection mechanism 90a-2 may be capable of adjusting the injection amount of the carrier gas, including cleaning without the carrier gas. Further, in the present disclosure, "injection of cleaning liquid" may include injection accompanied by a carrier gas.

FIG. 11 is a perspective view showing the internal configuration of the wafer station 33b-2 of the second cleaning unit 30b-2. The wafer station 33b-2 functions as a temporary stand for the polished wafer W, moves the wafer W in the first direction (vertical direction in the example shown in FIG. 11), and delivers the wafer W to the cleaning unit transfer mechanism 32b-2. It is configured to be able to. The first direction is not limited to the vertical direction (vertical direction), and may be a horizontal direction, a vertical direction, or a direction inclined in the horizontal direction. Further, the first direction is a direction different from the transfer direction (for example, the horizontal direction) of the wafer W to the wafer station 33b-2 (stage 82-2) by the transfer robot 23-2 of the polishing unit 12-2, particularly perpendicular. It may be a direction. As shown in FIG. 11, the wafer station 33b-2 has a substantially rectangular parallelepiped shape, a stage 82-2 arranged inside the housing 81-2 and holding the wafer W, and a stage 82. It has a drive mechanism 85-2 that moves -2 up and down.

The housing 81-2 has a bottom plate, four side plates, and a top plate. Of the four side plates, a carry-in inlet 83-2 communicating with the polishing portion 12-2 is formed at the upper end portion of the side plate facing the polishing portion 12-2. The carry-in entrance 83-2 can be opened and closed by a shutter (not shown). The transfer robot 23-2 of the polishing unit 12-2 can access the inside of the housing 81-2 from the carry-in entrance 83-2, and can deliver the polished wafer W to the stage 82-2.

Further, among the four side plates, the remaining three side plates (that is, the side plates on the side opposite to the polishing portion 12-2 and the left and right side plates) are cleaned at a height lower than the carry-in entrance 83-2. A wafer transfer opening 84-2 is formed for passing the arm of the unit transfer mechanism 32b-2. The wafer transfer opening 84-2 can be opened and closed by the shutter 87-2. The cleaning unit transfer mechanism 32b-2 of the second cleaning unit 30b-2 can access the inside of the housing 81-2 through the wafer transfer opening 84-2, and the wafer W has the wafer transfer opening 84-. It is delivered from the stage 82-2 to the cleaning unit transport mechanism 32b-2 of the second cleaning unit 30b-2 through 2.

As the drive mechanism 85-2, for example, a motor drive mechanism using a ball screw or an air cylinder is used. The stage 82-2 is fixed to the movable part of the drive mechanism 85-2, and the height position facing the carry-in inlet 83-2 and the wafer transfer opening 84-2 are supplied by the power supplied from the drive mechanism 85-2. It is moved up and down between the height position facing the. Similar to the stage 72-2 of the wafer station 33a-2, the outer peripheral portion of the stage 82-2 is provided with four pins 86-2 so as to project upward. Therefore, the wafer mounted on the stage 82-2 is supported on the stage 82-2 with its outer peripheral edge guided and positioned by the four pins 86-2. Further, in the present embodiment, the stage 82-2 is formed in a frame shape having an opening or a notch so as to expose and support the lower surface of the wafer W.

Further, in the present embodiment, the housing 81-2 of the wafer station 33b-2 is provided with an injection mechanism 90b-2 configured to be capable of injecting a cleaning liquid onto the wafer W held by the stage 82-2. (Not shown in FIG. 6). The injection mechanism 90b-2 is controlled by the control unit 15-2. The injection mechanism 90b-2 is provided inside the housing 81-2 in the same manner as the injection mechanism 90a-2 is provided inside the housing 71-2. The injection mechanism 90b-2 is substantially the same as the injection mechanism 90a-2, and is the same as the first nozzle 91a-2 and the second nozzle 92a-2. The first nozzle 91b-2 and the second nozzle 92b- Has 2. The same points as the injection mechanism 90a-2 with respect to the injection mechanism 90b-2 will be omitted. The first and second cleaning liquid supply sources 94b-2 and 95b-2 and the carrier gas supply source 96b-2 in the wafer station 33b-2 are the first cleaning liquid supply sources 94a-2 and 95a in the wafer station 33a-2. -2 and the carrier gas supply source 96a-2 may be shared, or may be provided separately.

As a cleaning machine for the primary cleaning module 311a-2 and the secondary cleaning module 312a-2, for example, roll-shaped sponges arranged vertically are rotated and pressed against the front surface and the back surface of the wafer to press the front surface and the back surface of the wafer. A roll-type washer for cleaning can be used. Further, as the cleaning machine of the tertiary cleaning module 313a-2, for example, a pencil type cleaning machine in which a hemispherical sponge is rotated and pressed against the wafer to perform cleaning can be used. As the cleaning machine for the quaternary cleaning module 314a-2, for example, a pencil type cleaning machine is used in which the back surface of the wafer can be rinsed and the surface of the wafer is cleaned by pressing a hemispherical sponge while rotating it. be able to. The cleaning machine of the quaternary cleaning module 314a-2 is provided with a stage for rotating the chucked wafer at high speed, and has a function (spin dry function) of drying the wafer after cleaning by rotating the wafer at high speed. There is. In each cleaning module 311a-2 to 314a-2, in addition to the roll type washer and the pencil type washer described above, a megasonic type washer that irradiates the cleaning liquid with ultrasonic waves for cleaning is provided. It may be additionally provided.

The control unit 15-2 is provided to control each component of the substrate processing device 10-2. The control unit 15-2 may be configured as a microcomputer that includes a CPU, a memory, and the like and realizes a predetermined function by using software, or may be configured as a hardware circuit that performs dedicated arithmetic processing. The control unit 15-2 of the present embodiment includes a calculation unit 15a-2, a memory 15b-2, and a setting unit 15c-2. The setting unit 15c-2 functions as a user interface and is used to set various setting values (setting information) by an external operation. Specifically, the setting unit 15c-2 includes an operation button (not shown), a touch panel, and the like, and various setting values set in the setting unit 15c-2 are stored in the memory 15b-2.

Next, the operation of the substrate processing device 10-2 will be described. In the substrate processing apparatus 10-2, first, the wafer W before polishing is taken out from the wafer cassette of the front load section 113-2 by the transfer robot 111-2 of the load / unload section 11-2, and is taken out from the transfer section 14-2. Handed over to. Subsequently, the wafer W is delivered from the transfer unit 14-2 to the transfer robot 23-2, and the wafer W is turned upside down together with the hand 231-2 by the reversing mechanism 234-2 of the transfer robot 23-2. .. As a result, the processing surface of the wafer W is directed downward. Next, the transfer robot 23-2 delivers the transfer to the first transfer unit 24a-2 or the second transfer unit 24b-2, and the first transfer unit 24a-2 or the second transfer unit 24b-2 first to fourth. The wafer W is carried into the polishing devices 21a-2 to 21d-2. Then, in the first to fourth polishing devices 21a-2 to 21d-2, the wafer W is attracted and held by the top ring, and is polished by being brought into contact with the polishing pad 102a-2.

After the polishing of the wafer W is completed, the polished wafer W is received from the first polishing devices 21a-2 to 21d-2 to the transfer robot 23-2 through the first transfer unit 24a-2 or the second transfer unit 24b-2. Passed. Subsequently, the wafer W is turned upside down together with the hand 231-2 by the reversing mechanism 234-2 of the transfer robot 23-2. As a result, the processing surface of the wafer W is directed upward. Then, the wafer W is delivered from the transfer robot 23-2 to the wafer station 33a-2 or the wafer station 33b-2 of the cleaning unit 13-2.

When the polished wafer W is delivered to the wafer station 33a-2, the wafer W is held by the stage 72-2 and moves upward together with the stage 72-2 by the drive mechanism 75-2. In the present embodiment, when the wafer W is conveyed by the wafer station 33a-2, the cleaning liquid is injected onto the wafer W by the injection mechanism 90a-2. That is, the control unit 15-2 ejects the cleaning liquid from the first nozzle 91a-2 and the second nozzle 92a-2 to the wafer W while transporting the wafer W by the wafer station 33a-2. And the drive mechanism 75-2 are controlled. FIG. 12 is a diagram for explaining the injection of the cleaning liquid onto the wafer W by the first nozzle 91a-2 of the injection mechanism 90a-2, and FIG. 13 is a diagram for explaining the injection of the cleaning liquid onto the wafer W by the second nozzle 92a-2 of the injection mechanism 90a-2. It is a figure for demonstrating the injection of the cleaning liquid of a wafer W. Note that, in FIGS. 12 and 13, for the sake of simplicity, the injection of the cleaning liquid by the first nozzle 91a-2 and the injection of the cleaning liquid by the second nozzle 92a-2 are shown separately, but these are performed at the same time. You may be broken. As shown in FIG. 12, in the present embodiment, the first nozzle 91a-2 is fixed to the housing 71-2 above the wafer W and is configured to inject the cleaning liquid downward at a predetermined angle. Has been done. Then, the cleaning liquid is ejected from the first nozzle 91a-2 while moving the wafer W upward by the stage 72-2. As a result, as shown in FIG. 12, the region where the cleaning liquid is sprayed changes with the movement of the wafer W, and the cleaning liquid can be uniformly applied to the upper surface of the wafer W. Further, as shown in FIG. 13, in the present embodiment, the second nozzle 92a-2 is fixed to the housing 81-2 below the wafer W, and the cleaning liquid is ejected toward the information at a predetermined angle. It is configured in. Then, the cleaning liquid is ejected from the second nozzle 92a-2 while moving the wafer W upward by the stage 72-2. As a result, as shown in FIG. 13, the region where the cleaning liquid is sprayed changes with the movement of the wafer W, and the cleaning liquid can be uniformly applied to the lower surface of the wafer W.

Further, the control unit 15-2 may reciprocate the stage 72-2 in the vertical direction to inject the cleaning liquid from the injection mechanism 90a-2 onto the wafer W. The number of reciprocating movements of the stage 72-2 (wafer W) may be a predetermined number of times (for example, twice) or may be set through the setting unit 15c-2. Further, the control unit 15-2 may adjust the moving speed of the stage 72-2. The moving speed of the stage 72-2 may be a predetermined speed or may be set through the setting unit 15c-2.

Then, at the wafer station 33a-2, the wafer W is delivered from the stage 72-2 to the cleaning unit transfer mechanism 32a-2, and the wafer W is transferred by the cleaning unit transfer mechanism 32a-2 to the primary to fourth cleaning modules 311a-2 to It is transported to 314a-2. As a result, the wafer W is cleaned and dried by the cleaning modules 311a-2 to 314a-2. After the cleaning and drying treatment in the cleaning unit 13 is completed, the wafer W is taken out from the cleaning unit 13-2 to the load / unload unit 11-2, and the substrate processing in the substrate processing apparatus 10-2 is completed.

Similarly, when the polished wafer W is delivered to the wafer station 33b-2, the wafer W is held by the stage 82-2 and moves downward together with the stage 82-2 by the drive mechanism 85-2. In the present embodiment, when the wafer W is conveyed by the wafer station 33b-2, the cleaning liquid is injected onto the wafer W by the injection mechanism 90b-2. That is, the control unit 15-2 drives the injection mechanism 90b-2 so that the cleaning liquid is ejected from the first nozzle 91b-2 and the second nozzle 92b-2 to the wafer W while conveying the wafer W by the wafer station 33b. It controls the mechanism 85-2. Similar to the injection of the cleaning liquid by the injection mechanism 90a-2 in the wafer station 33a-2 described above, the cleaning liquid is moved downward from the first nozzle 91b-2 and the second nozzle 92b-2 while the wafer W is moved downward by the stage 82-2. By injecting the cleaning liquid, the cleaning liquid can be uniformly applied to the lower surface of the wafer W.

Further, the control unit 15-2 may reciprocate the stage 82-2 in the vertical direction to inject the cleaning liquid from the injection mechanism 90b-2 onto the wafer W. The number of reciprocating movements of the stage 82-2 (wafer W) may be a predetermined number of times (for example, twice) or may be set through the setting unit 15c-2. Further, the control unit 15-2 may adjust the moving speed of the stage 82-2. The moving speed of the stage 82-2 may be a predetermined speed or may be set through the setting unit 15c-2.

Then, at the wafer station 33b-2, the wafer W is delivered from the stage 82-2 to the cleaning unit transfer mechanism 32b-2, and the wafer W is transferred from the primary to quaternary cleaning modules 311b-2 by the cleaning unit transfer mechanism 32b-2. It is transported to 314b-2. As a result, the wafer W is cleaned and dried by the cleaning modules 311b-2 to 314b-2. After the cleaning and drying treatment in the cleaning unit 13-2 is completed, the wafer W is taken out from the cleaning unit 13-2 to the load / unload unit 11-2, and the substrate processing in the substrate processing apparatus 10-2 is completed.

As described above, in the substrate processing apparatus 10-2 of the present embodiment, the wafer W is subjected to a plurality of cleaning lines in the cleaning unit 13-2 (in the present embodiment, the primary to quaternary cleaning modules 311a-2 to 314a-2 are used. Before cleaning in the two cleaning lines of the primary to quaternary cleaning modules 311b-2 to 314b-2), they are transported in stages 72-2, 82-2 of the wafer stations 33a-2, 33b-2. The wafer W can be pre-cleaned by allowing a cleaning liquid to act on it. By allowing the cleaning liquid to act on the wafer W by utilizing the movement of the stages 72-2 and 82-2 at the wafer stations 33a-2 and 33b-2 in this way, the wafer W is newly moved for pre-cleaning. The cleaning liquid can be preferably applied to the wafer W without providing a mechanism for causing the wafer W.

Although it is a duplicate explanation, the above-mentioned substrate processing apparatus 10-2 executes the substrate processing method shown in FIG. That is, the wafer W is polished by the polishing unit 12-2 (step S12-2), and the polished wafer W is transferred to the wafer stations 33a-2 and 33b-2 by the transfer robot (transfer mechanism) 23-2. (Step S14-2). Subsequently, when the wafer W is moving in the vertical direction at the wafer stations 33a-2 and 33b-2, the cleaning liquid is injected onto the wafer W from the injection mechanisms 90a-2 and 90b-2 (step S16-2). .. As a result, the wafer W can be pre-cleaned. Then, the wafer W is handed over from the stages 72-2 and 82-2 of the wafer stations 33a-2 and 33b-2 to the cleaning unit transfer mechanisms 32a-2 and 32b-2, and the primary to fourth cleaning modules 311a-. The wafer W is washed at 2 to 314a-2 and 311b-2 to 314b-2 (step S18-2). At this time, since the cleaning liquid is sprayed onto the wafer W in advance in step S16-2 to pre-clean the wafer W, the cleaning time in the cleaning unit 13 can be shortened. According to such a substrate processing method, the cleaning efficiency of the wafer W can be improved.

In the substrate processing apparatus 10-2 described above, when the wafer W is conveyed by the conveying section 14-2, the load / unloading section 11-2, or the like, the processed surface comes into contact with the substrate processing apparatus 10-2 and becomes contaminated or damaged. The processing surface of the wafer W is turned upward so as not to prevent it. Further, when the wafer W is polished by the polishing portion 12-2, the wafer W is inverted by the transfer robot 23-2 so that the processing surface faces downward so that the polishing liquid acts on the polishing pad 102a-2. It is said that. Then, when the polishing by the polishing unit 12-2 is completed, the wafer W is inverted again by the transfer robot 23 so that the processed surface is not contaminated or damaged, and the processed surface is turned upward and transferred to the cleaning unit 13-2. Will be done. In such a substrate processing apparatus 10-2, the polishing liquid or polishing residue remaining on the wafer W due to polishing by the polishing unit 12-2 may spread over the entire surface of the wafer W due to the rotation of the wafer W by the transfer robot 23-2. There is. The polishing liquid used in the polishing unit 12-2 is generally highly viscous, and when it dries over time, the polishing liquid solidifies and becomes difficult to remove. On the other hand, in the substrate processing apparatus 10-2 according to the present embodiment, the cleaning liquid is applied to the wafer W moving up and down at the wafer station 33a-2 arranged in series with the cleaning modules 311a-2 to 314a-2. Injection mechanism 90a-2 capable of injecting cleaning liquid onto wafer W moving up and down in wafer station 33b-2 arranged in series with injection mechanism 90a-2 capable of injecting cleaning modules 311b-2 to 314b-2. 2 and are provided. As a result, the cleaning liquid can be allowed to act on the wafer W at an early timing, and the polishing liquid or polishing residue adhering to the wafer W can be suitably removed. Moreover, by allowing the cleaning liquid to act on the wafer W with the movement of the wafer W by the wafer stations 33a-2 and 33b-2, the wafer W does not need to be newly provided with a mechanism for moving the wafer W for pre-cleaning. The wafer W can be pre-cleaned by uniformly applying the cleaning liquid to the entire surface.

(Modification example 1)
In the above embodiment, the injection mechanisms 90a-2 and 90b-2 have two nozzles for injecting the cleaning liquid. However, the present invention is not limited to these examples, and the injection mechanisms 90a-2 and 90b-2 may have one or three or more nozzles.

Further, in the above-described embodiment, in the cleaning unit 13-2, the first cleaning unit 30a-2 and the second cleaning unit 30b-2 each have wafer stations 33a-2 and 33b-2, and the transfer robot 23 It was assumed that the wafer W was distributed to either the wafer stations 33a-2 or 33b-2 according to -2. However, the present invention is not limited to these examples, and as an example, a single wafer station that communicates the first cleaning unit 30a-2 and the second cleaning unit 30b-2 is provided, and in the single wafer station, the wafer W Is either the primary to quaternary cleaning modules 311a-2 to 314a-2 of the first cleaning unit 30a-2 and the primary to quaternary cleaning modules 311b-2 to 314b-2 of the second cleaning unit 30b-2. It may be sorted into a wash.

Further, in the above-described embodiment, the cleaning unit 13-2 has a first cleaning unit 30a-2 and a second cleaning unit 30b-2 arranged in two upper and lower stages. However, the present invention is not limited to these examples, and the cleaning unit 13-2 may have a plurality of cleaning units arranged in three or more stages above and below. Further, the cleaning unit 13-2 may have a plurality of cleaning units arranged in a plurality of left and right stages.

(Modification 2)
FIG. 15 is a schematic view showing a polishing portion transport mechanism in a modified example. As shown in FIG. 15, the transfer robot 23-2 of the polishing portion transfer mechanism 22-2 in the modified example includes a hand 231-2 for holding the wafer W and a hand 231 as in the transfer robot 23-2 of the embodiment. The flipping mechanism 234-2 that flips -2 upside down (that is, flips the front and back surfaces of the wafer W), the telescopic arm 234-2 that supports the wafer W, and the arm 234-2 are flipped up and down. It has a robot main body 233-2 including an arm vertical movement mechanism for moving and an arm rotation mechanism for rotating the arm 232-2 around a vertical axis. The robot body 233-2 is attached so as to hang from the ceiling frame of the polishing portion 12-2. The reversing mechanism 234-2 is configured so that the hand 231-2 can be rotated by a drive mechanism such as a motor to turn the hand 231-2 upside down.

Further, the polishing section transfer mechanism 22-2 of the modified example has an injection mechanism 26-2 configured to be capable of injecting a cleaning liquid onto the wafer W held by the transfer robot 23-2. The injection mechanism 26-2 is controlled by the control unit 15-2. As an example, the injection mechanism 26-2 includes a nozzle 261-2 that injects the cleaning liquid 262-2, a cleaning liquid adjusting mechanism 263-2 that can adjust the cleaning liquid supplied to the nozzle 261-2, and a first cleaning liquid supply source 264. -2 and a second cleaning liquid supply source 265-2. As the nozzle 261-2, a spray nozzle or a droplet nozzle can be adopted. The injection mechanism 26-2 may be capable of injecting the cleaning liquid 262-2 onto the wafer W, and may have a sprayer or the like in place of or in addition to the nozzle 261-2.

In this modification, the nozzle 261-2 is fixed to a frame (not shown) of the polishing portion 12-2. However, the nozzle 261-2 may be configured to be movable by a moving mechanism (not shown). Here, the nozzle 261-2 may be arranged above the target (wafer W or the hand 231-2 of the transfer robot 23-2) for injecting the cleaning liquid. As a result, it is possible to prevent the cleaning port of the nozzle 261-2 from being contaminated by the scattered matter from the wafer W or the hand 231-2 of the transfer robot 23-2. Further, as an example, the nozzle 261-2 is configured so that the injection center direction of the cleaning liquid is inclined with respect to the vertical direction and the horizontal direction. Further, as an example, the nozzle 261-2 is arranged horizontally away from the object to which the cleaning liquid is sprayed. As a result, when the cleaning liquid or the like is unintentionally dropped from the nozzle 261-2, it is possible to prevent the dropped object from hitting the wafer W. Further, as an example, in the nozzle 261-2, the tip of the nozzle 261-2 faces the robot main body 233-2 of the transfer robot 23 (particularly, the surface from which the lead wire of reference numeral 2332 in FIG. 15 is drawn out). It is good to be arranged like this. Further, as an example, the nozzle 261-2 may be arranged so that the tip of the nozzle 261-2 faces the root of the hand 231-2. As a result, the reversing mechanism 234-2 and the arm 234-2 can be suitably cleaned by the injection liquid injected from the injection mechanism 26-2. Further, the nozzle 261-2 may be configured to inject the cleaning liquid 262-2 into a cone shape (conical shape) or a fan shape. In this case, as an example, the injection mechanism 26-2 is such that the range (diameter) of the cleaning liquid that is injected in a cone shape or a fan shape and acts on the wafer W is equal to the diameter of the wafer W or slightly larger than the diameter of the wafer W. It is composed. As a result, the cleaning liquid 262-2 can be sprayed over a wide range from the nozzle 261-2, and the cleaning liquid 262-2 can be uniformly applied to the target.

In this modification, the first cleaning liquid supply source 264-2 and the second cleaning liquid supply source 265-2 are connected to the nozzle 261-2 via the cleaning liquid adjusting mechanism 263-2. Different cleaning liquids are stored in the first cleaning liquid supply source 264-2 and the second cleaning liquid supply source 265-2. As an example, pure water is stored as the first cleaning liquid in the first cleaning liquid supply source 264-2, and rinse (hydrofluoric acid, ammonia, etc.) is stored as the second cleaning liquid in the second cleaning liquid supply source 265-2. At least one of the first cleaning liquid and the second cleaning liquid may be the same as the cleaning liquid used in the cleaning unit 13-2. Further, at least one of the first cleaning liquid and the second cleaning liquid may be different from the cleaning liquid used in the cleaning unit 13-2. Further, the first and second cleaning liquid supply sources 264 and 265-2 are with any of the first cleaning liquid supply sources 94a-2, 94b-2, 95a-2, 95b-2 of the wafer stations 33a-2, 33b-2. It may be shared. The nozzle 261-2 is not limited to the one in which two cleaning liquid supply sources are connected, and one or three or more cleaning liquid supply sources may be connected. The cleaning liquid (for example, the first cleaning liquid and the second cleaning liquid) injected from the injection mechanism 26-2 is selected based on the residue to be removed of the wafer W. As an example, only the cleaning liquid supply source in which pure water is stored may be connected to the nozzle 261-2. The cleaning liquid adjusting mechanism 263-2 supplies the cleaning liquid from the first cleaning liquid supply source 264-2 and the second cleaning liquid supply source 265-2 to the nozzle 261-2 according to a predetermined recipe. Further, the control unit 15-2 may supply the cleaning liquid from the first cleaning liquid supply source 264-2 and the second cleaning liquid supply source 265-2 to the nozzle 261-2 according to the setting through the setting unit 15c-2. .. The cleaning liquid adjusting mechanism 263-2 switches the cleaning liquid supplied to the nozzle 261-2 between the first cleaning liquid from the first cleaning liquid supply source 264-2 and the second cleaning liquid from the second cleaning liquid supply source 265-2. May be supplied. Further, the cleaning liquid adjusting mechanism 263-2 may supply the cleaning liquid to the nozzle 261-2 by adjusting the mixing ratio of the first cleaning liquid and the second cleaning liquid.

Further, in the present embodiment, the injection mechanism 26-2 is realized by a two-fluid nozzle mechanism, and a carrier gas supply source 266-2 for supplying a carrier gas such as nitrogen is connected to the nozzle 261-2. ing. By ejecting the cleaning liquid and the carrier gas at high speed, a two-fluid jet flow in which the cleaning liquid exists as fine droplets (mist) in the carrier gas is generated. By ejecting this two-fluid jet flow toward the surface of the wafer W and causing it to collide, particles and the like can be suitably removed (cleaned). The injection mechanism 26-2 may be capable of adjusting the injection amount of the carrier gas, including cleaning without the carrier gas. Further, in the present disclosure, "injection of cleaning liquid" may include injection accompanied by a carrier gas.

In this modification, when the polished wafer W is inverted by the transfer robot 23-2, the cleaning liquid is injected onto the wafer W by the injection mechanism 26-2. By spraying the polishing liquid while inverting the wafer W, the cleaning liquid can act on the entire surface of the wafer W. At this time, the control unit 15-2 is at a position where the wafer W is along the vertical direction (vertical position) when the cleaning liquid is injected by the injection mechanism 26-2, that is, the plate surface of the wafer W faces in the horizontal direction. At the position, it may be stopped for a first hour (eg, a few seconds). In this way, the cleaning liquid can be poured over the plate surface of the wafer W, and foreign matter can be efficiently removed from the wafer W. Further, the control unit 15-2 may stop the wafer W at the vertical position for a second time (for example, several seconds) after the injection of the cleaning liquid by the injection mechanism 26-2 is completed. As a result, excess cleaning liquid and foreign matter can be removed from the plate surface of the wafer W.

Further, when the cleaning liquid is injected from the injection mechanism 26-2, the control unit 15-2 may invert the wafer W a plurality of times. The number of times the wafer W is inverted may be a predetermined number of times (for example, twice), or may be set through the setting unit 15c-2. Further, the control unit 15-2 may adjust the speed at which the wafer W is inverted by the inversion mechanism 234-2. For example, the control unit 15-2 controls the reversing mechanism 234-2 so that the wafer W is inverted at the first inversion speed when the wafer W before the processing by the polishing unit 12 is inverted, and the processing by the polishing unit 12-2. When the subsequent wafer W is inverted, the inversion mechanism 234-2 may be controlled so that the wafer W is inverted at a second inversion speed slower than the first speed. As a result, the wafer W before polishing can be quickly inverted to speed up the processing in the substrate processing apparatus 10-2, and the wafer W after polishing can be inverted relatively slowly to transfer the cleaning liquid to the wafer W. Can act. Further, the inversion speed of the wafer W may be a predetermined speed or may be set through the setting unit 15c-2.

As described above, in the substrate processing apparatus 10-2 of the present embodiment, before the wafer W is cleaned by the cleaning unit 13-2, the cleaning liquid is applied to the wafer W when the wafer W is inverted by the transfer robot 23-2. The wafer W can be pre-cleaned by acting. Further, by using the reversing mechanism 234-2 of the transfer robot 23-2 that inverts the wafer W in order to attach the wafer W to the top ring 25a-2, a mechanism for newly moving the wafer W for pre-cleaning is provided. The cleaning liquid can be preferably applied to the wafer W without being provided.

Then, the wafer W is handed over from the transfer robot 23-2 to the cleaning unit 13-2 through the wafer stations 33a-2 and 33b-2, and the cleaning unit 13-2 performs cleaning and drying. After the cleaning and drying treatment in the cleaning unit 13-2 is completed, the wafer W is taken out from the cleaning unit 13-2 to the load / unload unit 11-2, and the substrate processing in the substrate processing apparatus 10-2 is completed. After the wafer W is delivered from the transfer robot 23-2 to the cleaning unit 13-2, the cleaning liquid may be injected into the hand 231-2 of the transfer robot 23-2 by the injection mechanism 26-2. In this way, the injection mechanism 26-2 can also clean the hand 231-2 of the transfer robot 23-2. At this time, the cleaning liquid may be injected from the injection mechanism 26-2 while the hand 231-2 is inverted by the reversing mechanism 234-2.

In the cleaning of the robot reversing machine, there are various foreign substances (called "defict") that are present for each polishing route, such as polished particles after polishing, substrate particles that have been polished and peeled off, polishing liquid, and fine powder of polishing pads. Can be positively removed from both sides of the substrate, especially those that have turned to the back surface, by using a more vigorous movement than the vertical movement of the hand (using the centrifugal force of rotation, etc.). Then, the substrate can be fed to the cleaning unit in a state where the main defects are not present on both sides of the substrate. Cleaning during vertical transportation at a workstation has the effect of preventing oxidation of metals such as wiring on the polished substrate surface by forming a water film. In addition, the substrate can be sent to the cleaning module in a wet state by cleaning during vertical transportation at the workstation, so that the wettability of the substrate surface is made uniform, and the entire substrate surface is evenly and uniformly cleaned during the subsequent cleaning. Can be washed efficiently. Of course, cleaning on a workstation also has the meaning of removing defects that were not removed by cleaning with a robot hand. In this way, by performing cleaning with a robot reversing machine and cleaning with a workstation, it is possible to improve the cleaning efficiency, which is an issue of cleaning the back surface of the substrate, unlike simply repeating several stages of cleaning. it can.

Although some embodiments of the present invention have been described above, the above-described embodiments of the present invention are for facilitating the understanding of the present invention and do not limit the present invention. The present invention can be modified and improved without departing from the spirit thereof, and it goes without saying that the present invention includes an equivalent thereof. In addition, any combination or omission of the claims and the components described in the specification is possible within the range in which at least a part of the above-mentioned problems can be solved or at least a part of the effect is exhibited. Is.

The present application claims priority based on Japanese Patent Application No. 2019-22177 filed on December 6, 2019 and Japanese Patent Application No. 2019-22179 filed on December 6, 2019. All disclosures, including the specification, claims, drawings and abstracts of Japanese Patent Application No. 2019-22177 and Japanese Patent Application No. 2019-22179, are incorporated herein by reference in their entirety. All disclosures including the specification, claims, drawings and abstracts of JP-A-2018-6549 (Patent Document 1) are incorporated herein by reference in their entirety.

The present embodiment described above can also be described as the following embodiment.
[Form 1] According to Form 1, a substrate processing apparatus is proposed, and the substrate processing apparatus includes a polishing portion for polishing a substrate, a cleaning portion for cleaning the polished substrate, and the polishing of the substrate. A transport mechanism for transporting from a portion to the cleaning portion, the transport mechanism configured so that the front surface and the back surface of the substrate can be inverted, and the polished substrate are inverted by the transfer mechanism. It is provided with an injection mechanism capable of injecting a cleaning liquid onto the substrate. According to the first embodiment, the cleaning liquid can be applied to the substrate before the substrate is cleaned by the cleaning unit, and the cleaning efficiency of the substrate can be improved.

[Form 2] According to the second embodiment, in the first embodiment, the transport mechanism vertically positions the substrate when the cleaning liquid is injected by the injection mechanism or after the cleaning liquid is injected by the injection mechanism. Stop at. According to the second embodiment, excess cleaning liquid and foreign matter can be suitably removed from the substrate.

[Form 3] According to Form 3, in

Form

1 or 2, the injection mechanism is configured so that the injection center direction of the cleaning liquid is inclined with respect to the vertical direction and the horizontal direction.

[Form 4] According to Form 4, in Forms 1 to 3, the injection mechanism injects the cleaning liquid into a cone shape.

[Form 5] According to Form 5, in Forms 1 to 4, the injection mechanism is arranged horizontally apart from the substrate conveyed by the transfer mechanism. According to the fifth embodiment, it is possible to prevent the droplets from the injection mechanism from hitting the substrate.

[Form 6] According to the sixth embodiment, in the first to fifth aspects, the substrate processing apparatus includes a control unit that controls the components of the substrate processing apparatus, and the control unit is the inversion speed of the substrate by the transport mechanism. And at least one of the number of times the substrate is inverted by the transport mechanism can be changed. According to the sixth embodiment, it is possible to set the inversion mode of the substrate by the transport mechanism according to the situation.

[Form 7] According to the seventh embodiment, in the first to sixth aspects, the substrate processing apparatus includes a control unit that controls the components of the substrate processing apparatus, and the control unit injects the cleaning liquid by the injection mechanism. It is configured so that at least one of the flow rate and the components of the cleaning liquid can be changed. According to the seventh embodiment, the cleaning liquid to be injected from the injection mechanism can be set depending on the situation.

[Form 8] According to the eighth aspect, in the first to seventh forms, the transport mechanism inverts the substrate at the first inversion speed when the substrate before polishing is inverted, and when the polished substrate is inverted, the transfer mechanism is described. The substrate is inverted at a second inversion speed slower than the first inversion speed. According to the eighth embodiment, the substrate before being polished can be quickly inverted in the transport mechanism to improve the processing speed in the substrate processing apparatus. Further, the polished substrate can be inverted relatively slowly in the transport mechanism so that the cleaning liquid can act on the substrate.

[Form 9] According to Form 9, in Forms 1 to 8, the injection mechanism has a two-fluid nozzle configured to eject droplets containing the cleaning liquid together with a carrier gas.

[Form 10] According to Form 10, a substrate processing method is proposed, in which the substrate processing method involves a polishing step of polishing the substrate and the inversion of the polished substrate between the front surface and the back surface of the substrate. This includes a transfer step of transporting the substrate to the cleaning section, an injection step of injecting a cleaning liquid onto the substrate when the substrate is inverted in the transport step, and a step of cleaning the substrate in the cleaning section. According to the ninth form, the same effect as that of the first form can be obtained.

[Form 11] According to Form 11, a substrate processing apparatus is proposed, and the substrate processing apparatus includes a polishing portion for polishing a substrate, a plurality of cleaning lines for cleaning the polished substrate, and the plurality of cleaning lines. A plurality of transport mechanisms for transporting the substrate in each cleaning line of the cleaning line, and the plurality of cleaning lines are arranged in series, and the substrate is moved in the first direction and delivered to any of the plurality of transport mechanisms. It is provided with a cleaning unit having a wafer station configured in the above, and an injection mechanism capable of injecting a cleaning liquid onto a substrate moving in the first direction by the wafer station. According to the eleventh aspect, the cleaning liquid can be applied to the substrate before cleaning the substrate in the cleaning line, and the cleaning efficiency of the substrate can be improved.

[Form 12] According to Form 12, in the eleventh form, the plurality of cleaning lines are arranged in the vertical direction, and the first direction is the vertical direction.

[Form 13] According to Form 13, in Form 11 or 12, the injection mechanism is configured so that the injection center direction of the cleaning liquid is inclined with respect to the first direction.

[Form 14] According to Form 14, in Forms 11 to 13, the wafer station is configured to expose and support a part of the lower surface of the substrate, and the injection mechanism is conveyed by the wafer station. A first injector configured to inject the cleaning liquid from above onto the substrate and a second injector configured to inject the cleaning liquid from below onto the substrate conveyed by the wafer station. Have. According to the fourteenth aspect, the cleaning liquid can be applied to both the upper surface and the lower surface of the substrate by the injection mechanism.

[Form 15] According to Form 15, in Forms 11 to 14, the injection mechanism injects the cleaning liquid into a cone shape.

[Form 16] According to Form 16, in Forms 11 to 15, the injection mechanism is arranged horizontally away from the substrate conveyed by the wafer station. According to the sixteenth aspect, it is possible to prevent the droplets from the injection mechanism from hitting the substrate, or to prevent the injection mechanism from being contaminated by the scattered substances from the substrate.

[Form 17] According to Form 17, in the 11th to 16th forms, the transfer of the substrate by the wafer station includes the reciprocating movement in the first direction. In this way, the cleaning liquid can act on the substrate while reciprocating the substrate.

[Form 18] According to the 18th form, in the 11th to 17th forms, the substrate processing apparatus includes a control unit that controls the components of the substrate processing apparatus, and the control unit is the moving speed of the substrate by the wafer station. And, at least one of the number of times the substrate is moved by the wafer station can be changed. According to the eighteenth aspect, the movement mode of the substrate in the wafer station can be set according to the situation.

[Form 19] According to Form 19, in modes 11 to 18, the substrate processing apparatus includes a control unit that controls a component of the substrate processing apparatus, and the control unit injects the cleaning liquid by the injection mechanism. It is configured so that at least one of the flow rate and the components of the cleaning liquid can be changed. According to the nineteenth aspect, the cleaning liquid to be injected from the injection mechanism can be set depending on the situation.

[Form 20] According to Form 20, in Forms 11 to 19, the injection mechanism has a two-fluid nozzle configured to eject droplets containing the cleaning liquid together with a carrier gas.

[Form 21] According to Form 21, a substrate processing method is proposed, in which the substrate processing method includes a polishing step for polishing a substrate and a wafer station in which the polished substrate is arranged in series with a plurality of cleaning lines. A step of positioning the substrate, a step of moving the substrate in the first direction by the wafer station, and a step of transferring the substrate to one of a plurality of transfer mechanisms for transporting the substrate in each cleaning line of the plurality of cleaning lines, and the wafer. It includes an injection step of injecting a cleaning liquid onto the substrate moving in the first direction by a station, and a step of cleaning the substrate in any of the plurality of cleaning lines. According to the morphology 21, the same effect as that of the morphology 11 can be obtained.

10-1 ... Substrate processing device 11-1 ... Load / unload part 12-1 ... Polishing part 13-1 ... Cleaning part 14-1 ... Conveying part 15-1 ... Control unit 22-1 ... Polishing part Conveying mechanism 23- 1 ... Transfer robot 26-1 ... Injection mechanism 231-1 ... Hand 232-1 ... Arm 233-1 ... Robot body 234-1 ... Inversion mechanism 261-1 ... Nozzle 262-1 ... Cleaning liquid 263-1 ... Cleaning liquid adjustment mechanism 264 -1 ... 1st cleaning liquid supply source 265-1 ... 2nd cleaning liquid supply source 266-1 ... Carrier gas supply source W ... Wafer 10-2 ... Substrate processing device 11-2 ... Load / unload part 12-2 ... Polishing part 13-2 ... Cleaning unit 14-2 ... Transfer unit 15-2 ... Control unit 22-2 ... Polishing unit Transfer mechanism 23-2 ... Transfer robot 26-2 ... Injection mechanism 30a-2 ... First cleaning unit 30b-2 ... 2nd cleaning unit 32a-2, 32b-2 ... Cleaning unit transfer mechanism 33a-2, 33b-2 ... Wafer station 71-2 ... Housing 72-2 ... Stage 73-2 ... Carry-in inlet 74-2 ... For wafer transfer Opening 75-2 ... Drive mechanism 76-2 ... Pin 81-2 ... Housing 82-2 ... Stage 83-2 ... Carry-in entrance 84-2 ... Wafer transfer opening 85-2 ... Drive mechanism 86-2 ... Pin 90a- 2,90b-2 ... Injection mechanism 91a-2, 91b-2 ... First nozzle 92a-2, 92b-2 ... Second nozzle 93a-2, 93b-2 ... Cleaning liquid adjustment mechanism 94a-2, 94b-2 ... Second 1 Cleaning liquid supply source 95a-2, 95b-2 ... Second cleaning liquid supply source 96a-2, 96b-2 ... Carrier gas supply source 311a-2 to 314a-2, 311b-2 to 314b-2 ... Cleaning module (cleaning line) )
231-2 ... Hand 234-2 ... Arm 2332 ... Robot body 234-2 ... Reversing mechanism 261-2 ... Nozzle 262-2 ... Cleaning liquid 263-2 ... Cleaning liquid adjustment mechanism 264-2 ... First cleaning liquid supply source 265- 2 ... Second cleaning liquid supply source 266-2 ... Carrier gas supply source

Claims

A polishing part for polishing the substrate and
A cleaning unit for cleaning the polished substrate,
A transport mechanism for transporting a substrate from the polishing portion to the cleaning portion, which has a hand for holding the substrate so that the front surface and the back surface of the substrate can be inverted by rotating the hand. With the configured transport mechanism
An injection mechanism capable of injecting a cleaning liquid onto the substrate when the polished substrate is inverted by the transfer mechanism.
Substrate processing device.
The substrate processing device according to claim 1, wherein the transport mechanism stops the substrate at a vertical position when the cleaning liquid is injected by the injection mechanism or after the cleaning liquid is injected by the injection mechanism.
The substrate processing apparatus according to claim 1 or 2, wherein the injection mechanism is configured so that the injection center direction of the cleaning liquid is inclined with respect to the vertical direction and the horizontal direction.
The injection mechanism injects the cleaning liquid into a cone shape.
The substrate processing apparatus according to any one of claims 1 to 3.
The substrate processing device according to any one of claims 1 to 4, wherein the injection mechanism is arranged horizontally away from the substrate conveyed by the transfer mechanism.
The substrate processing apparatus includes a control unit that controls components of the substrate processing apparatus.
The control unit is configured to be able to change at least one of the reversing speed of the substrate by the transport mechanism and the number of reversals of the substrate by the transport mechanism.
The substrate processing apparatus according to any one of claims 1 to 5.
The substrate processing apparatus includes a control unit that controls components of the substrate processing apparatus.
The control unit is configured to be able to change at least one of the injection flow rate of the cleaning liquid by the injection mechanism and the components of the cleaning liquid.
The substrate processing apparatus according to any one of claims 1 to 6.
The transport mechanism inverts the substrate at the first inversion speed when inverting the substrate before polishing, and inverts the substrate at a second inversion speed slower than the first inversion speed when inverting the polished substrate. , The substrate processing apparatus according to any one of claims 1 to 7.
The substrate processing apparatus according to any one of claims 1 to 8, wherein the injection mechanism has a two-fluid nozzle configured to eject droplets containing the cleaning liquid together with a carrier gas.
A polishing step to polish the substrate and
A transport step in which the polished substrate is transported to the cleaning unit with the front surface and the back surface of the substrate inverted.
An injection step of injecting a cleaning liquid onto the substrate when the substrate is inverted in the transfer step,
The step of cleaning the substrate in the cleaning unit and
Substrate processing method including.
A polishing part for polishing the substrate and
A plurality of cleaning lines for cleaning the polished substrate, a plurality of transfer mechanisms for transporting the substrate in each cleaning line of the plurality of cleaning lines, and a plurality of transfer mechanisms arranged in series with the plurality of cleaning lines, the substrate is first. A cleaning unit having a wafer station configured to move in a direction and deliver to any of the plurality of transport mechanisms.
An injection mechanism capable of injecting a cleaning liquid onto a substrate moving in the first direction by the wafer station.
Substrate processing device.
The plurality of cleaning lines are arranged in the vertical direction.
The first direction is the vertical direction.
The substrate processing apparatus according to claim 11.
The substrate processing apparatus according to claim 11 or 12, wherein the injection mechanism is configured so that the injection center direction of the cleaning liquid is inclined with respect to the first direction.
The wafer station is configured to expose and support a portion of the underside of the substrate.
The injection mechanism injects the cleaning liquid from below onto the substrate conveyed by the wafer station and the first injector configured to inject the cleaning liquid from above onto the substrate conveyed by the wafer station. The substrate processing apparatus according to any one of claims 11 to 13, further comprising a second injector configured as described above.
The injection mechanism injects the cleaning liquid into a cone shape.
The substrate processing apparatus according to any one of claims 11 to 14.
The substrate processing apparatus according to any one of claims 11 to 15, wherein the injection mechanism is arranged horizontally away from the substrate conveyed by the wafer station.
The substrate processing apparatus according to any one of claims 11 to 16, wherein the transfer of the substrate by the wafer station includes reciprocating movement in the first direction.
The substrate processing apparatus includes a control unit that controls components of the substrate processing apparatus.
The control unit is configured to be able to change at least one of the moving speed of the substrate by the wafer station and the number of times the substrate is moved by the wafer station.
The substrate processing apparatus according to any one of claims 11 to 17.
The substrate processing apparatus includes a control unit that controls components of the substrate processing apparatus.
The control unit is configured to be able to change at least one of the injection flow rate of the cleaning liquid by the injection mechanism and the components of the cleaning liquid.
The substrate processing apparatus according to any one of claims 11 to 18.
The substrate processing apparatus according to any one of claims 11 to 19, wherein the injection mechanism has a two-fluid nozzle configured to eject droplets containing the cleaning liquid together with a carrier gas.
A polishing step to polish the substrate and
Steps to place the polished substrate on a wafer station arranged in series with multiple cleaning lines,
A step of moving the substrate in the first direction by the wafer station and delivering the substrate to any one of a plurality of transport mechanisms for transporting the substrate in each cleaning line of the plurality of cleaning lines.
An injection step of injecting a cleaning liquid onto a substrate moving in the first direction by the wafer station, and an injection step.
A step of cleaning the substrate in any of the plurality of cleaning lines,
Substrate processing method including.