WO2021111732A1

WO2021111732A1 - Attracting-and-holding device and object surface machining method

Info

Publication number: WO2021111732A1
Application number: PCT/JP2020/038249
Authority: WO
Inventors: 傅　寶▲莱▼; 博章小谷田
Original assignee: 筑波精工株式会社
Priority date: 2019-12-03
Filing date: 2020-10-09
Publication date: 2021-06-10
Also published as: CN114762097A; JP7453660B2; JP2021089948A

Abstract

In the present invention, when an attraction force generation member attracts a thin object, the outer peripheral section of the thin object is held by an attraction force so that a higher degree of flatness of the thin object in an attracted state is achieved.　An attracting-and-holding device (A1) comprises: a thin object (10); a ring-shaped pressing member (20) having a rib section (202) that presses at least a part of the outer peripheral section of the surface of the thin object (10); and an attraction force generation member (30) that attracts and holds the ring-shaped pressing member (20). The attraction force generation member (30) is used to attract the ring-shaped pressing member (20), and as a result, the thin object (10) is sandwiched and held between the rib section (202) and the attraction force generation member (30).

Description

Adsorption holding device and object surface processing method

The present invention relates to an adsorption holding device for adsorbing and holding a thin object and a method for processing the surface of an object in a suction holding state.

Conventionally, the dicing tape and the mask plate covering the surface of the ring frame can be swung up and down at the front and rear positions in the direction of attaching the release tape to the suction table that fixes the wafer mounted in the ring frame by vacuum suction. After the release tape is adhered to the surface protective tape, a release unit for peeling the protective tape from the surface of the wafer is provided between the supply portion and the take-up portion of the release tape. A wafer surface protection tape peeling device for peeling a wafer surface protection tape while making the peeling tape peeling angle of the peeling tape sharp with this peeling unit is known. By covering the wafer fixed by vacuum suction with a surface protective tape, the thin wafer is reinforced against vibrations and external forces acting when moving between processes, and cracks and microcracks are prevented from occurring (for example). See Patent Document 1).

On the other hand, an electrostatic chuck that utilizes Coulomb force is known as a holding means for holding a wafer. In the case of an electrostatic chuck, the electrostatic chuck exerts a support function for the wafer by integrally adsorbing and holding the entire wafer, and is reinforced against vibrations and external forces acting when moving between processes or in the processing process. The occurrence of cracks and microcracks is prevented (see, for example, Patent Document 2).

Japanese Unexamined Patent Publication No. 2001-3199006 Japanese Unexamined Patent Publication No. 2006-269826

However, in the prior art described in Patent Documents 1 and 2 above, the adsorption force acts only on the adsorption surface and the surface of the thin object. For this reason, for example, when a thin object is adsorbed by an electrostatic chuck, peeling occurs in the periphery due to the peeling phenomenon, and if the generated peeling expands and becomes a warp, the warp of the thin object cannot be corrected. .. Further, there is a problem that if a warp occurs due to a difference in the coefficient of thermal expansion of two different materials by performing a film forming process on a thin object, the warp cannot be corrected.

The present invention has been made by paying attention to the above problems. When the thin object is adsorbed on the adsorption force generating member, the outer peripheral portion of the thin object is sandwiched by the adsorption force, so that the thin object is in an adsorbed state. The purpose is to achieve an improvement in flatness.

In order to achieve the above object, the suction holding device of the present invention includes a thin object, a ring-shaped pressing member having a rib portion for pressing at least a part of the outer peripheral portion of the surface of the thin object, and a ring. A suction force generating member for sucking and holding the shape holding member is provided.
Then, by sucking the ring-shaped pressing member using the suction force generating member, the thin object is sandwiched and held between the rib portion and the suction force generating member.

Since the above-mentioned problem-solving means is adopted, when the thin object is adsorbed on the adsorption force generating member, the outer peripheral portion of the thin object is sandwiched by the adsorption force, thereby improving the flatness in the adsorbed state of the thin object. be able to.

It is a top view which shows the suction holding apparatus A1 of Example 1. FIG. It is a vertical sectional view which shows the suction holding apparatus A1 of Example 1. FIG. It is a detailed view which shows the enlarged structure and the suction force control part of the suction holding device A1 of Example 1. FIG. It is explanatory drawing which shows the principle of generating the electrostatic adsorption force by an electrostatic chuck. It is an operation explanatory view which shows the action which the electrostatic adsorption force is generated by applying a voltage to an electrode, and returns to the original state by the voltage off from an electrode. It is explanatory drawing of the object surface processing method which shows the surface film formation processing example which is an example of the surface processing using the thin object holding unit U1 of Example 1. FIG. It is an action explanatory view which shows the adsorption action of the thin object which has a warp in the prior art. It is an action explanatory view which shows the adsorption action of the thin object which has a warp in Example 1. FIG. It is a top view which shows the suction holding apparatus A2 of Example 2. FIG. It is a vertical sectional view which shows the suction holding apparatus A2 of Example 2. It is a top view which shows the suction holding apparatus A3 of Example 3. FIG. It is a vertical sectional view which shows the suction holding apparatus A3 of Example 3. FIG. It is an enlarged sectional view which shows the suction holding apparatus A4 of Example 4. FIG.

Hereinafter, a mode for carrying out the adsorption holding device and the object surface processing method according to the present invention will be described based on Examples 1 to 4 shown in the drawings.

In the adsorption holding device and the object surface processing method in the first embodiment, a wafer as a material of an IC chip (semiconductor integrated circuit) is used as a thin object, and a circuit pattern of fine wiring, elements, etc. on the surface of the object in the adsorption state. Is applied to a group of semiconductor manufacturing equipment that manufactures a single semiconductor chip (die) by applying various surface treatments. Hereinafter, the "configuration of the adsorption holding device A1" and the "object surface processing method" will be described.

[Structure of adsorption holding device A1 (FIGS. 1 to 4)]
As shown in FIGS. 1 to 3, the suction holding device A1 includes a thin object 10, a ring-shaped pressing member 20, a suction force generating member 30, and a suction force control unit 40.

The thin object 10 is a circular thin plate-shaped object having a thickness of 0.5 mm or less, and a "wafer" made of a circular thin plate made of crystals of a semiconductor material is a typical object. Here, as the "wafer", in addition to the most common silicon wafers, silicon carbide wafers, sapphire wafers, and compound semiconductor wafers (gallium phosphide wafers, gallium arsenide wafers, indium phosphide wafers, gallium nitride wafers, etc.) Is included. Further, the "wafer" also includes a glass wafer used as a support substrate.

As shown in FIG. 3, the ring-shaped pressing member 20 integrally has an annular suction portion 201 and a rib portion 202. In the annular suction portion 201, the suction lower surface 20a formed by the annular plane is suction-fixed to the suction force generating member 30 by an electrostatic suction force. The rib portion 202 is formed so as to project in the inner diameter direction from the entire peripheral portion of the upper portion of the inner surface of the annular suction portion 201, and the pressing lower surface 20b formed by the annular plane presses the entire outer peripheral portion of the surface 10a of the thin object 10. The inner protruding end face 20c of the rib portion 202 is a circular end face having an outer diameter slightly smaller than the outer diameter of the thin object 10, and as shown in FIG. 1, of the surface region of the thin object 10, the inner protruding end face 20c The inner circular region (region excluding the lower surface 20b of the presser foot) is the machined surface MS1 (hatching region) for the thin object 10.

Here, the suction width of the suction lower surface 20a is formed to have a width of, for example, about 5 mm to 10 mm, and the holding width of the holding lower surface 20b is formed to, for example, a width of about 1 mm to 2 mm. Further, the step width of the step surface 20d between the annular suction portion 201 and the rib portion 202 is formed to be substantially the same as the thickness of the thin object 10. Since the material of the ring-shaped pressing member 20 is a member that generates an attractive force by using an electrostatic field, it is permissible to use any material of a conductor, a semiconductor, or an insulator. For example, an insulating material such as a reinforced plastic material can be used as long as it is a material having a predetermined rigidity.

The suction force generating member 30 generates a suction force by using an electrostatic field, and exhibits a function of generating a suction force that sucks and holds both the thin object 10 and the ring-shaped pressing member 20. As shown in FIG. 3, the suction force generating member 30 is embedded inside the electrically insulating layer 301 that electrostatically attracts the thin object 10 and the ring-shaped pressing member 20, and the positive electrode and the minus. It is configured to include

electrode element groups

302 and 303 in which electrodes are alternately arranged, and a base plate 304 having

electrode elements groups

302 and 303 on a surface opposite to the electrically insulating layer 301.

Here, the suction force generating member 30 has an outer diameter larger than the outer diameter of the thin object 10, and as shown in FIG. 3, the suction force generating member 30 expands outward to the object holding region corresponding to the size of the thin object 10. The region to which the region is added is set as the region where the electrostatic adsorption forces Fa and Fb are generated. Then, by holding the ring-shaped pressing member 20 with respect to the outer enlarged region of the suction force generating member 30 by the electrostatic suction force Fa, as shown in FIG. 3, the entire outer peripheral portion of the thin object 10 is ring-shaped. It is sandwiched and held between the rib portion 202 of the pressing member 20 and the suction force generating member 30. At the same time, the entire suction surface 10b of the thin object 10 is sucked and held by the electrostatic suction force Fb with respect to the object holding region of the suction force generating member 30. The entire surface of the target-side plane 301a of the electrically insulating layer 301 is an electrostatic adsorption force generation surface formed by adding an outer expansion region to the object holding region.

As shown in FIG. 3, the suction force control unit 40 is provided so as to be able to connect / disconnect to the

electrode element groups

302 and 303 included in the suction force generating member 30. The adsorption force control unit 40 is connected to the

electrode element groups

302 and 303 to control the generation / disappearance of the electrostatic attraction forces Fa and Fb, and is separated from the

electrode element groups

302 and 303 when the electrostatic attraction force is generated. Even so, the generation of electrostatic attraction forces Fa and Fb is maintained by the electric charge accumulated in the attraction force generation member 30. That is, the suction force control unit 40 is not a cord system that is always connected to the

electrode element groups

302 and 303 by a lead wire or the like, but when an electric charge is accumulated in the suction force generation member 30, it is separated from the suction force generation member 30. It is a cordless system.

Here, in the case of the cordless method, when the thin object 10 and the ring-shaped pressing member 20 are sucked, the suction force control unit 40 is connected to the suction force generating member 30, and the thin object is applied by applying a voltage to the

electrode element groups

302 and 303. The object 10 and the ring-shaped pressing member 20 are electrostatically attracted. Then, when the generation of the electrostatic attraction force Fa, Fb is confirmed, the adsorption force control unit 40 is separated from the attraction force generation member 30, and the electrostatic attraction force Fa, It is used to maintain the generation of Fb.

As shown in FIG. 3, the suction force control unit 40 includes a first switch SW1 that controls continuity between the electrode element group 302 and the ground, a second switch SW2 that controls voltage application to the electrode element group 302, and a second switch SW2. Voltage application control to the third switch SW3 that controls the voltage application of the opposite polarity to the voltage applied by the two switch SW2, the fourth switch SW4 that controls the continuity between the electrode element group 303 and the ground, and the electrode element group 303. A fifth switch SW5 for performing the above operation and a sixth switch SW6 for controlling the voltage application having the opposite polarity to the voltage applied by the fifth switch SW5 are provided.

In the initial state of the suction force control unit 40, all switches SW1, SW2, SW3, SW4, SW5, SW6 are turned off. When generating the electrostatic suction force, the suction force control unit 40 is connected to the suction force generation member 30, and the suction force is generated by executing the on / off control of each switch, and then the suction force is generated. The suction force control unit 40 is separated from the member 30. After that, when releasing the electrostatic attraction force, the adsorption force control unit 40 is connected to the attraction force generating member 30 again, and the electrostatic attraction force is released by executing on / off control of each switch.

Next, the principle of generating the electrostatic adsorption forces Fa and Fb in the adsorption force generating member 30 will be described with reference to FIGS. 4 and 5. The suction force generating member 30 used in the first embodiment is an example of an “electrostatic chuck” that electrostatically sucks an object by a Coulomb force. As shown in FIG. 4, the principle of generating electrostatic attraction by this "electrostatic chuck" induces surface polarization on the surface of an object when a voltage is applied to the electrodes. Here, negative surface polarization is induced in the surface portion of the object facing the electrode portion to which the positive voltage is applied. Further, positive surface polarization is induced in the surface portion of the object facing the electrode portion to which the negative voltage is applied. Then, an electrostatic field is formed between the electrode surface and the surface of the object due to an arcuate flow from the positive electrode through the surface of the object to the negative electrode, and the object is adsorbed on the surface of the insulating layer by this electrostatic field. Electrostatic adsorption force is generated.

Then, when the electrostatic attraction force is released, as shown in FIG. 5, when the operation of shutting off the voltage applied to the electrodes is performed, the object is in the original state (the state in which the electrostatic chuck and the object are separated). ), And does not provide charge to the object. The reason why the electric charge is not supplied to the object by blocking the voltage applied to the electrode is that the applied voltage induces an electrostatic attraction due to the surface polarization of the object. Therefore, when the voltage applied to the electrode is cut off, the object is subjected to electrostatic attraction. This is due to the elimination of surface polarization.

[Object surface treatment method (Fig. 6)]
As described above, the suction force generating member 30 has a cordless system in which the suction force controlling unit 40 is separated from the suction force generating member 30, so that the suction holding device A1 independently transfers the thin object 10 while being sucked. It can be put into the surface processing device in a possible unit state. The object surface processing method is executed by putting it into this surface processing device. Hereinafter, an example of vacuum film formation processing, which is an example of surface processing using the thin object holding unit U1, will be described with reference to FIG.

This is an object surface processing method using a suction holding device A1 in which a thin object 10 is sandwiched between a rib portion 202 of a ring-shaped pressing member 20 and a suction force generating member 30, and is a processing device transfer step and a film forming process. It includes a step and a device external transfer step.

As shown in FIG. 6A, the processing apparatus transfer step realizes surface film formation of the thin object holding unit U1 composed of the thin object 10, the ring-shaped pressing member 20, and the suction force generating member 30. It is transferred to the inside of the film attachment device 50 (surface processing device).

Here, the film-attaching device 50 is, for example, a vaporization in which the inside of the vacuum vessel 51 is evacuated, the evaporation source 52 is installed at the inner lower position of the vacuum vessel 51, and the object is installed at the upper facing position of the evaporation source 52. A film forming device by the method.

In the film forming process, as shown in FIG. 6B, when the thin object holding unit U1 is set at the internal processing position of the film forming apparatus 50, the rib portion 202 is removed from the surface 10a of the thin object 10. The film formation process is performed using the affected area as the processed surface MS1 (see FIG. 1).

Here, the film forming process means, for example, heating, melting, and evaporating the film material in a vacuum at the evaporation source 52 in the vacuum vessel 51, and adhering the film material made of the evaporated fine particles to the surface of the thin object 10. To say.

As shown in FIG. 6C, in the device external transfer step, when the film forming process is completed, the thin object object 10 which has been film-formed is held and the thin object object is held from the internal processing position of the film forming apparatus 50. The unit U1 is removed and transferred to the outside of the film attachment device 50.

Here, when the thin object 10 having been film-formed from the thin object holding unit U1 is separated from the adsorption force generating member 30 and taken out after being transferred to the outside of the film-attaching device 50, the thin object 10 is adsorbed at the external transfer destination. The force control unit 40 is connected to release the electrostatic adsorption forces Fa and Fb. On the other hand, when the film forming process is a part of the continuous surface processing process, the thin object holding unit U1 is transferred to the next surface processing device installed outside the film forming device 50. .. If the next surface processing device is the surface opposite to the film-forming surface, the electrostatic adsorption forces Fa and Fb are released, the front and back sides of the thin object 10 are reversed, and then the electrostatic adsorption force is again obtained. Fa and Fb are generated to electrostatically adsorb the thin object 10, and the back surface of the thin object 10 is subjected to a film forming process.

As described above, the object surface processing method uses the thin object holding unit U1 composed of the thin object 10, the ring-shaped pressing member 20, and the suction force generating member 30, so that the flatness is ensured. The purpose is to apply surface treatment to the object 10. Therefore, the surface processing device is not limited to the film-implanting device 50 that realizes surface deposition, and the surface processing device is a plasma etching device that realizes surface etching processing installed in the manufacturing process of a semiconductor element. Of course, an ion implantation device that realizes ion implantation processing is also included.

Here, the "plasma etching apparatus" refers to an apparatus in which etching processing for forming a fine circuit such as a semiconductor integrated circuit on a thin object 10 is performed in low temperature gas plasma. The "ion implantation device" refers to a processing device that implants a substance ion into a solid thin object 10 like a dopant injection into a semiconductor. Even in the case of these etching processes and ion implantation processes, as in the case of vacuum film forming process, an object surface processing method including a processing device transfer step, a film forming process step, and an device external transfer step. Will be done.

Next, "background technology and problem-solving measures" will be explained. Then, the "characteristic action of the adsorption holding device A1" in the first embodiment will be described.

[Background technology and problem-solving measures (Figs. 7 and 8)]
For example, when a thin object is adsorbed by an electrostatic chuck, peeling occurs due to a peeling phenomenon on the outer peripheral portion outside the line along the linearly arranged electrodes, and the generated peeling expands and becomes warped. Become. Further, when a thin object is subjected to a film forming process, warpage occurs in a state of being adsorbed on the electrostatic chuck due to the difference in the coefficient of thermal expansion of two different materials. Further, for example, when a glass wafer having a film film formed is used as a thin object, the object becomes a warped object before being adsorbed by the electrostatic chuck. Even if an attempt is made to correct the warp of these thin objects, a strong force that can counter the warp force is required, and as shown in FIG. 7, the electrostatic attraction force by the electrostatic chuck also means that the electrostatic attraction force <warp force. There is a problem that it is difficult to correct the warp of a thin object because the warp remains in the outer peripheral region which is a force relationship.

In particular, in recent years, communication speeds and corresponding devices have evolved in the form of "mobile communication systems" from 3G to 4G, and from 4G to 5G (5G is an abbreviation for 5th generation mobile communication system "5th Generation"). doing. Insulated gate bipolar transistors (IGBTs), which are also used as switching elements in inverters, are evolving toward miniaturization. With these evolutions, the thinning of objects that require precision processes has progressed, and it has become indispensable to correct the warpage of thin objects with large warpage (for example, a thickness of 200 μm and a warp of 20 mm). In other words, there is a need for an effective solution that can correct the warp of thin objects.

Based on the verification of the solutions to the above problems and requirements, the present inventors have focused on the outer area of the suction area that adsorbs the thin object to the electrostatic chuck, and uses the outer area to make the holding member static. An experiment was conducted in which electrosorption was carried out. By this experiment, it is possible to generate a necessary and sufficient electrostatic attraction force for the pressing member, and if the side portion of the thin object is pressed by the rib portion of the pressing member having sufficient rigidity, the thin object is peeled (peeling). It was confirmed that peeling) can be prevented.

Based on the findings of the above experiment, the adsorption holding device A1 of the present disclosure has a ring shape having a thin object 10 and a rib portion 202 that presses at least a part of the outer peripheral portion of the surface of the thin object 10. A pressing member 20 and a suction force generating member 30 that attracts and holds the ring-shaped pressing member 20 are provided. Then, by sucking the ring-shaped pressing member 20 using the suction force generating member 30, a solution means is adopted in which the thin object 10 is sandwiched and held between the rib portion 202 and the suction force generating member 30. ..

For example, in the case of the thin object 10 that is warped in advance, as shown in FIG. 8, the curved end portion of the thin object 10 that is warped is engaged with the rib portion 202 of the ring-shaped pressing member 20 to form a ring shape. The pressing member 20 is pushed in and attracted to the suction force generating member 30. As a result, an electrostatic suction force Fa is generated as an suction force on the ring-shaped pressing member 20, and as shown in FIG. 2, the thin object 10 is held in a state of being sandwiched between the rib portion 202 and the suction force generation member 30. Will be done.

Therefore, in the case of the thin object 10 that is warped in advance, it is generated in the thin object 10 by sandwiching the outer peripheral end portion of the thin object 10 when the ring-shaped pressing member 20 is attracted to the suction force generating member 30. The warp is corrected by the adsorption force (electrostatic adsorption force Fa). Further, even if warpage is to be generated from the outer peripheral portion of the thin object 10 adsorbed on the adsorption force generating member 30, the ring-shaped pressing member 20 generating the adsorption force (electrostatic adsorption force Fa) makes the thin object thin. By maintaining the side portion sandwiched holding of the object 10, the occurrence of warpage itself is prevented.

As a result, when the thin object 10 is adsorbed on the adsorption force generating member 30, the outer peripheral portion of the thin object 10 is sandwiched by the adsorption force (electrostatic adsorption force Fa), so that the thin object 10 is flat in the adsorbed state. A degree of improvement can be achieved. In addition, by correcting the warp of the thin object 10 and increasing the flatness, the film thickness accuracy of the vacuum film formation can be improved. Further, by sandwiching and holding the thin object 10 by the ring-shaped pressing member 20, it is possible to prevent the thin object 10 from cracking or cracking due to thermal deformation under the high temperature process of the film formation or the thermal processing step. ..

[Characteristic action of adsorption holding device A1 (FIGS. 1 to 3)]
In the suction force generating member 30 of the first embodiment, a region in which the outer expansion region is added to the object holding region is set as the suction force generating region. Then, the ring-shaped pressing member 20 is sucked and held in the outer enlarged region, and the suction surface of the thin object 10 is sucked and held in the object holding region.

That is, as shown in FIG. 3, the ring-shaped pressing member 20 is attracted and held in the outer enlarged region of the suction force generating member 30 by the suction force (electrostatic suction force Fa). At the same time, the suction surface 10b of the thin object 10 is sucked and held in the object holding region of the suction force generating member 30 by the suction force (electrostatic suction force Fb). Therefore, the warp can be corrected by sandwiching the thin object 10 between the ring-shaped pressing members 20, but at the same time, the thin object 10 is also adsorbed (electrostatically adsorbed), so that the thin object 10 has a large warp. You will be able to correct the warp. Then, when the thin object 10 is adsorbed (electrostatically adsorbed), the flatness of the thin object 10 can be further increased as compared with simply sandwiching the thin object 10 with the ring-shaped pressing member 20, and the film thickness of the vacuum film formation can be further increased. The accuracy can be further improved.

In Example 1, the thin object 10 is a thin plate object having a thickness of 0.5 mm or less. As a result, wafers such as silicon wafers and glass wafers, for which warp correction is indispensable as the thinning of the object requiring a precision process progresses, can be included in the thin object 10.

In the first embodiment, the suction force generating member 30 is a member in which the

electrode element groups

302 and 303 are embedded inside the electrically insulating layer 301 to generate the suction force by using an electrostatic field.

That is, the thin object 10 used in the high-temperature process of vacuum film formation and heat processing is a non-magnetic material such as a silicon wafer or a glass wafer. Therefore, the thin object 10 cannot be adsorbed by the adsorption holding device A4 using a magnetic field, which will be described later. On the other hand, if the suction force generating member 30 is a member that generates a suction force by using an electrostatic field, it does not matter what the material of the thin object 10 or the ring-shaped pressing member 20 is. Therefore, the suction holding device A1 using an electrostatic field can suck both the thin object 10 and the ring-shaped pressing member 20, and the flatness of the thin object 10 is improved as compared with the suction holding device A4 using a magnetic field described later. be able to.

In the first embodiment, the suction force control unit 40 that can be connected / disconnected to the

electrode element groups

302 and 303 of the suction force generation member 30 is provided. The suction force control unit 40 is a cordless system in which the ring-shaped pressing member 20 is connected to the suction force generating member 30 when the ring-shaped pressing member 20 is sucked, and after the ring-shaped pressing member 20 is sucked, the ring-shaped pressing member 20 is separated from the suction force generating member 30.

That is, if the cord method is adopted in which the suction force control unit is always connected to the electrode element group of the suction force generating member, the voltage is continuously applied both when it is transferred to the surface processing device and when it is installed in the surface processing device. It is necessary to have a complicated structure, and high temperature durability is also required. On the other hand, if the suction force control unit 40 is separated from the suction force generating member 30, the independent thin object holding unit U1 composed of the thin object 10, the ring-shaped pressing member 20, and the suction force generating member 30 is adopted. Therefore, it can be easily transferred to and attached to the surface processing apparatus.

As described above, the adsorption holding device A1 and the object surface processing method of Example 1 have the effects listed below.

(1) Thin object 10 and
A ring-shaped pressing member 20 having a rib portion 202 that presses at least a part of the outer peripheral portion of the surface of the thin object 10.
A suction force generating member 30 that sucks and holds the ring-shaped pressing member 20 is provided.
By sucking the ring-shaped pressing member 20 using the suction force generating member 30, the thin object 10 is sandwiched and held between the rib portion 202 and the suction force generating member 30.
Therefore, when the thin object 10 is attracted to the suction force generating member 30, the outer peripheral portion of the thin object 10 is sandwiched by the suction force to improve the flatness of the thin object 10 in the suction state. Can be done. In addition, as the flatness of the thin object 10 is improved, for example, the film thickness accuracy of vacuum film formation can be improved, and the thin object 10 due to thermal deformation under a high temperature process of film formation or thermal processing step. It is possible to prevent cracks and cracks in the.

(2) The suction force generating member 30 sets a region in which the outer expansion region is added to the object holding region as the suction force generating region.
The ring-shaped pressing member 20 is sucked and held in the outer enlarged region, and the suction surface 10b of the thin object 10 is sucked and held in the object holding region.
Therefore, the warp of the thin object 10 having a large warp can be corrected, and the flatness of the thin object 10 can be further increased as compared with simply sandwiching the thin object 10 with the ring-shaped pressing member 20. Then, by further increasing the flatness of the thin object 10, for example, the film thickness accuracy of the vacuum film formation can be improved as compared with simply sandwiching the thin object 10 with the ring-shaped pressing member 20.

(3) The thin object 10 is a thin plate object having a thickness of 0.5 mm or less.
Therefore, wafers such as silicon wafers and glass wafers, for which warp correction is indispensable as the thinning of the object requiring a precision process progresses, can be included in the thin object 10.

(4) The adsorption force generating member 30 is a member in which the

electrode element groups

302 and 303 are embedded inside the electrically insulating layer 301 to generate the adsorption force by using an electrostatic field.
Therefore, the suction holding device A1 using an electrostatic field can suck both the thin object 10 and the ring-shaped pressing member 20, and the flatness of the thin object 10 is improved as compared with the suction holding device A4 using a magnetic field described later. be able to.

(5) A suction force control unit 40 that can be connected / disconnected to the

electrode element groups

302 and 303 of the suction force generation member 30 is provided.
The suction force control unit 40 is a cordless system in which the ring-shaped pressing member 20 is connected to the suction force generating member 30 when the ring-shaped pressing member 20 is sucked, and after the ring-shaped pressing member 20 is sucked, the ring-shaped pressing member 20 is separated from the suction force generating member 30.
Therefore, it becomes an independent thin object holding unit U1 composed of the thin object 10, the ring-shaped pressing member 20, and the suction force generating member 30, and can be easily transferred to and attached to the surface processing apparatus.

(6) A method for surface-treating an object using a suction holding device A1 in which a thin object 10 is sandwiched between a rib portion 202 of a ring-shaped pressing member 20 and a suction force generating member 30.
The thin object holding unit U1 composed of the thin object 10, the ring-shaped pressing member 20, and the suction force generating member 30 is transferred to the surface processing device (film attachment device 50).
When the thin object holding unit U1 is set at the internal processing position of the surface processing apparatus, the area of the surface 10a of the thin object 10 excluding the rib portion 202 is surface-processed (deposited) as the processed surface MS1.
When the surface processing is completed, the thin object holding unit U1 is removed from the internal processing position of the surface processing apparatus while holding the surface-processed thin object 10, and the thin object holding unit U1 is transferred to the outside of the surface processing apparatus.
Therefore, an independent thin object holding unit U1 composed of the thin object 10, the ring-shaped pressing member 20, and the suction force generating member 30 is used, and it is necessary for the machined surface MS1 of the thin object 10 whose flatness is ensured. Can perform various surface treatments with high accuracy.

(7) The surface processing device is a film forming device 50 that realizes surface film formation.
Therefore, by using the thin object holding unit U1, it is possible to realize surface film formation on the processed surface MS1 of the thin object 10 whose flatness is ensured with high film thickness accuracy.

(8) The surface processing device is a plasma etching device that realizes surface etching processing.
Therefore, by using the thin object holding unit U1, it is possible to realize highly accurate and precise surface etching processing on the processed surface MS1 of the thin object 10 whose flatness is ensured.

(9) The surface processing device is an ion implantation device that realizes ion implantation processing.
Therefore, by using the thin object holding unit U1, it is possible to realize ion implantation processing with high injection position accuracy on the processed surface MS1 of the thin object 10 whose flatness is ensured.

Example 2 is an example in which the ring-shaped pressing member 20 is a suction holding device A2 having a rib portion 202'that presses a part of the outer peripheral portion of the surface of the thin object 10.

As shown in FIGS. 9 and 10, the ring-shaped pressing member 20 of the second embodiment is formed by projecting in the inner diameter direction at four positions arranged at 90-degree isometric angles from the upper surface of the annular suction portion 201. It has a rib portion 202'. Due to the four rib portions 202', as shown in FIG. 9, the region excluding the four rib portions 202'of the surface region of the thin object 10 is the machined surface MS2 (hatching region) with respect to the thin object 10. ). Since the other configurations are the same as those in the first embodiment, the description thereof will be omitted.

Therefore, the suction holding device A2 of the second embodiment is a thin object 10 capable of correcting the warp of the outer peripheral portion by partial sandwiching, and the machined surface MS2 is enlarged as compared with the machined surface MS1 of the first embodiment. It is useful for application to the thin object 10 with a desired demand.

In Example 2, an example of four rib portions 202'formed by projecting in the inner diameter direction at four equiangular positions is shown. However, the rib portion 202'is not limited to the one formed at four positions as long as it is formed so as to project in the inner diameter direction at a plurality of positions of two or more positions.

In Example 3, the thin object was a square thin object 10', and a ring-shaped pressing member 20' having a shape different from that of Examples 1 and 2 was used according to the shape of the thin object 10'. This is an example of the suction holding device A3.

Each of the thin objects 10'is rectangular, and a total of six are arranged inside the circular area formed by the ring-shaped pressing member 20'. That is, three thin objects 10'arranged in the vertical direction of FIG. 11 are arranged in two rows in the horizontal direction of FIG. 11, resulting in a total of six objects.

As shown in FIGS. 11 and 12, the ring-shaped pressing member 20'integrates a suction portion 203 with a square window and a square rib portion 204. The suction portion 203 with a square window has square opening windows 203a formed at six locations corresponding to the thin object 10', and the disc-shaped suction lower surface 20e excluding the square opening window 203a is attached to the suction force generating member 30. It is adsorbed and fixed by electrostatic adsorption force. The square rib portion 204 is formed so as to project in the inner diameter direction from the entire peripheral portion of the upper portion of the inner surface of each of the square opening windows 203a, and the square rib portion 204 presses the entire outer peripheral portion of the surface of the thin object 10'. Then, as shown in FIG. 11, of the surface region of the thin object 10', the region excluding the square rib portion 204 becomes the processed surface MS3 (hatching region) with respect to the thin object 10'. Since the other configurations are the same as those in the first embodiment, the description thereof will be omitted.

Therefore, the suction holding device A3 of the third embodiment is useful for application when the size of the suction force generating member 30 allowed in the vacuum film formation or the high temperature process device is larger than the size of the thin object 10'. Then, in the suction holding device A3, since the suction area for electrostatically adsorbing the ring-shaped pressing member 20'can be secured in a much wider area than in Examples 1 and 2, the ring-shaped pressing member 20'is used for thin objects. It is possible to correct a large warp of an object 10'.

When correcting a large warp of the thin object 10', the shape of the thin object 10'(for example, the rectangular shape shown in FIGS. 11 and 12) and the quantity of the thin object 10'(for example, FIGS. 11 and 12). It is not limited to 6) ”shown in 12. Therefore, the shape of the thin object 10'is not limited to a rectangular shape, and may be a circular shape or a polygonal shape. Further, the quantity of the thin object 10'is not limited to 6, and may be any number as long as the quantity is 2 or more.

Example 4 is an example in which the suction holding device A4 uses a member that generates a suction force by using a magnetic field as the suction force generation member 30'.

As shown in FIG. 13, the attractive force generating member 30'is a permanent magnet or an electromagnet that generates an attractive force using a magnetic field. The ring-shaped pressing member 20 is made of a magnetic material. Since the other configurations are the same as those in the first embodiment, the description thereof will be omitted.

Therefore, in the suction holding device A4 of the fourth embodiment, the ring-shaped pressing member 20 is attracted by the magnetic force Fc using the magnetic field generated between the suction force generating member 30'and the ring-shaped pressing member 20, so that the object is thin. The warp of the object 10 will be corrected.

As described above, the adsorption holding device A4 of the fourth embodiment has the following effects in addition to the effects of (1) to (3) of the first embodiment.

(10) The suction force generating member 30'is used as a member for generating the suction force by using a magnetic field.
The ring-shaped pressing member 20 is a member made of a magnetic material.
Therefore, the flatness of the thin object 10 can be ensured by correcting the warp of the thin object 10 by magnetically attracting the ring-shaped pressing member 20 using a magnetic field. In addition, in the adsorption holding device A4, it is also possible to obtain the effects of (6) to (9) by the object surface processing method of Example 1.

The suction holding device and the object surface processing method of the present invention have been described above based on Examples 1 to 4. However, the specific configuration is not limited to these examples, and design changes, addition of configurations, etc. are permitted as long as the gist of the invention according to each claim is not deviated.

In Examples 1 to 4, wafers used as materials for IC chips (semiconductor integrated circuits) are used as thin objects 10, 10'. However, the thin object is not limited to the wafer, and may be, for example, an example of a film in which warpage is a problem, and further, a thin object other than the wafer or film in which warpage is a problem. You may.

Claims

Thin objects and
A ring-shaped pressing member having a rib portion that presses at least a part of the outer peripheral portion of the surface of the thin object.
A suction force generating member that sucks and holds the ring-shaped pressing member is provided.
A suction holding device characterized in that by sucking the ring-shaped pressing member using the suction force generating member, the thin object is sandwiched and held between the rib portion and the suction force generating member.
In the adsorption holding device according to claim 1,
In the suction force generating member, a region obtained by adding an outer expansion region to the object holding region is set as the suction force generating region.
A suction holding device characterized in that the ring-shaped pressing member is sucked and held in the outer enlarged region, and the suction surface of the thin object is sucked and held in the object holding region.
In the adsorption holding device according to claim 1 or 2.
A suction holding device characterized in that the thin object is a thin plate-shaped object having a thickness of 0.5 mm or less.
In the adsorption holding device according to any one of claims 1 to 3.
A suction holding device characterized in that the suction force generating member is a member that generates a suction force by embedding an electrode element group inside an electrically insulating layer and using an electrostatic field.
In the suction holding device according to claim 4,
A suction force control unit that can be connected / disconnected to the electrode element group included in the suction force generating member is provided.
The suction force control unit is characterized by a cordless system that connects to the suction force generating member when sucking the ring-shaped pressing member, sucks the ring-shaped pressing member, and then disconnects from the suction force generating member. Adsorption holding device.
In the adsorption holding device according to any one of claims 1 to 3.
The attraction force generating member is a member that generates an attraction force by using a magnetic field.
A suction holding device characterized in that the ring-shaped pressing member is a member made of a magnetic material.
A method for surface processing an object using a suction holding device in which a thin object is sandwiched between a rib portion of a ring-shaped pressing member and a suction force generating member.
The thin object holding unit composed of the thin object, the ring-shaped pressing member, and the suction force generating member is transferred to the surface processing apparatus.
When the thin object holding unit is set at the internal processing position of the surface processing apparatus, the surface of the thin object is surface-processed using the region excluding the rib portion as the processed surface.
When the surface processing is completed, the thin object holding unit is removed from the internal processing position of the surface processing apparatus while holding the surface-processed thin object, and the thin object holding unit is transferred to the outside of the surface processing apparatus. Surface treatment method for the object to be used.
In the object surface treatment method according to claim 7,
The surface processing device is a method for surface processing an object, which is a film-forming device that realizes surface film formation.
In the object surface treatment method according to claim 7,
The surface processing apparatus is a method for surface processing an object, which is a plasma etching apparatus that realizes surface etching processing.
In the object surface treatment method according to claim 7,
The surface processing apparatus is an object surface processing method, characterized in that it is an ion implantation apparatus that realizes ion implantation processing.