WO2021110585A1 - Puce à semi-conducteur émettrice de rayonnement - Google Patents

Puce à semi-conducteur émettrice de rayonnement Download PDF

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Publication number
WO2021110585A1
WO2021110585A1 PCT/EP2020/083888 EP2020083888W WO2021110585A1 WO 2021110585 A1 WO2021110585 A1 WO 2021110585A1 EP 2020083888 W EP2020083888 W EP 2020083888W WO 2021110585 A1 WO2021110585 A1 WO 2021110585A1
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Prior art keywords
blocking layer
radiation
layer
semiconductor chip
emitting semiconductor
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PCT/EP2020/083888
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German (de)
English (en)
Inventor
Stefan HECKELMANN
Andreas LEX
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Osram Opto Semiconductors Gmbh
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Publication of WO2021110585A1 publication Critical patent/WO2021110585A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Definitions

  • a radiation-emitting semiconductor chip is specified.
  • a radiation-emitting semiconductor chip with improved aging stability is to be specified.
  • the radiation-emitting semiconductor chip comprises an epitaxial semiconductor layer sequence.
  • the epitaxial semiconductor layer sequence is generally grown epitaxially on a growth substrate.
  • the epitaxial semiconductor layer sequence comprises a multiplicity of epitaxial individual layers or consists of a multiplicity of epitaxial individual layers which are stacked on top of one another in a stacking direction.
  • the epitaxial semiconductor layer sequence has, for example, a thickness between 200 nanometers and 8000 nanometers inclusive.
  • the growth substrate of the epitaxial semiconductor layer sequence is preferably no longer encompassed by the radiation-emitting semiconductor chip.
  • the radiation-emitting Semiconductor chip then preferably a carrier which is attached to the epitaxial semiconductor layer sequence with a joining layer, for example a solder.
  • the first conductivity type is preferably electron conductive. Accordingly, the first doped region is preferably n-doped. However, it is also possible for the first doped region to be p-doped and thus to be hole-conducting.
  • the epitaxial semiconductor layer sequence comprises a second doped region of a second conductivity type.
  • the second conductivity type is different from the first conductivity type.
  • the second conductivity type is preferably hole-conducting.
  • the second doped region is preferably p-doped.
  • the epitaxial semiconductor layer sequence comprises an active region which is arranged between the first doped region and the second doped region.
  • the active area is usually intrinsically doped.
  • intrinsically doped means in particular that the active region is not specifically provided with doping.
  • the active region generally has one Background doping due to impurities that cannot be avoided.
  • the active area is set up to generate electromagnetic radiation during operation.
  • the epitaxial semiconductor layer sequence comprises at least one first blocking layer which is arranged in the first doped region and is doped in accordance with the first conductivity type.
  • the first blocking layer is preferably n-doped when the first doped region is n-doped. If the first doped region is p-doped, then the first blocking layer is also preferably p-doped.
  • the epitaxial semiconductor layer sequence comprises at least one second blocking layer, which is arranged in the second doped region and is doped in accordance with the second conductivity type.
  • the second blocking layer is preferably n-doped when the second doped region is n-doped. If the second doped region is p-doped, then the second blocking layer is also preferably p-doped.
  • the blocking layers are not necessarily formed from a single single layer. Rather, it is also possible that the blocking layers are each formed from a multiplicity of individual layers which at least partially differ from one another, for example with regard to their material composition.
  • the first Blocking layer and / or the second blocking layer a migration of crystal defects into the active area at least.
  • the first blocking layer and / or the second blocking layer preferably prevent the migration of crystal defects into the active region, particularly preferably completely.
  • crystal defects denotes in particular crystal defects, such as lattice defects in the crystal structure of the epitaxial semiconductor layer sequence. This includes, for example, point defects and line defects, such as one-dimensional or two-dimensional dislocations. Crystal defect "meant.
  • the first blocking layer and / or the second blocking layer preferably serves as a diffusion barrier for the crystal defects.
  • the crystal defects can particularly preferably be localized in the respective doped region of the epitaxial semiconductor layer sequence.
  • the first region is n-doped and the second region is p-doped, or vice versa.
  • only the n-doped region comprises an n-doped blocking layer, while the p-doped region is free of a blocking layer.
  • an n- doped blocking layer in the n-doped area is suitable for preventing migration of crystal defects.
  • the first blocking layer and / or the second blocking layer preferably has a thickness that is at least 1 nanometer.
  • the first blocking layer and / or the second blocking layer particularly preferably has a thickness that is at least 3.5 nanometers.
  • the first blocking layer and / or the second blocking layer are formed in a tensioned manner.
  • the first blocking layer and / or the second blocking layer is tensilely braced or compressively braced.
  • a tensile tensioned blocking layer arises during the epitaxial growth of the blocking layer when the intrinsic lattice constant of the material of the blocking layer is smaller than the lattice constant of the material directly beneath it in the growth plane.
  • the first blocking layer is epitaxially grown on the material of the first doped region, the material of the first blocking layer having a smaller intrinsic lattice constant than the material of the first doped region in the growth plane, then the finished first blocking layer is tensilely braced against the first doped region.
  • the second blocking layer is epitaxially grown on the material of the first doped region, the material of the first blocking layer having a smaller intrinsic lattice constant than the material of the first doped region in the growth plane, then the finished first blocking layer is tensilely braced against the first doped region. The same applies equivalently to the second blocking layer.
  • a compressively stressed blocking layer arises during the epitaxial growth of the blocking layer when the intrinsic lattice constant of the blocking layer is greater as the lattice constant of the material directly below in the growth plane. If the first blocking layer is epitaxially grown on the material of the first doped region, the material of the first blocking layer having a greater intrinsic lattice constant than the material of the first doped region in the growth plane, then the finished first blocking layer is compressively tensioned against the first doped region. The same applies equivalently to the second blocking layer.
  • the first blocking layer and / or the second blocking layer is not set up to generate electromagnetic radiation.
  • the first blocking layer is preferably arranged within the first doped region in such a way that only a few or no minority charge carriers, that is to say charge carriers of the second conductivity type, can reach the first blocking layer.
  • the first blocking layer is particularly preferably at a distance of at least 50 nanometers from the active area. In this way it is generally possible to prevent generation of radiation within the first blocking layer.
  • the second blocking layer is also particularly preferably arranged within the second doped region in such a way that only a few or no minority charge carriers, that is to say charge carriers of the first conductivity type, can reach the second blocking layer.
  • the first blocking layer is particularly preferably at a distance of at least 50 nanometers from the active area.
  • the epitaxial one is particularly preferably based
  • Materials of the material system of arsenide compound semiconductor containing arsenic such as the materials from the system In x Al y Ga z P xy ASI z with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 0.02, x + y ⁇ 1.
  • Active areas that are based on materials of the material system of the arsenide compound semiconductors or consist of such materials are usually set up to generate electromagnetic radiation from the red to infrared spectral range.
  • a band gap of the epitaxial semiconductor layer sequence can be changed, while an intrinsic lattice constant of the epitaxial semiconductor layer sequence is changed only insignificantly.
  • An increase in the aluminum content leads to a larger band gap and to an insignificant change in the intrinsic lattice constant.
  • a variation of the indium content that is to say the value of x, leads to a change in the band gap of the epitaxial semiconductor layer sequence and to a change in the intrinsic lattice constant.
  • An increase in the indium content leads to a smaller band gap of the epitaxial semiconductor layer sequence and to a larger intrinsic lattice constant of the epitaxial semiconductor layer sequence.
  • tensioning of the blocking layer can thus be set.
  • the aluminum content of the first blocking layer and / or the second blocking layer is particularly preferably selected so that the band gap of the first blocking layer and / or the second blocking layer is greater than the photon energy of the electromagnetic radiation emitted by the active area and / or the second blocking layer is designed to be transparent to the electromagnetic radiation of the active region.
  • a variation of the phosphorus content that is to say the value of z, leads to a change in the band gap of the epitaxial semiconductor layer sequence and to a change in the intrinsic lattice constant.
  • An increase in the phosphorus content leads to a larger band gap of the epitaxial semiconductor layer sequence and to a smaller intrinsic lattice constant of the epitaxial semiconductor layer sequence.
  • the epitaxial semiconductor layer sequence is based on materials of the material system of the phosphide compound semiconductors or consists of materials of the material system of the phosphide compound semiconductors.
  • Materials of the material system of the phosphide compound semiconductors contain phosphorus, like the materials from the system
  • Compound semiconductors based or consist of such materials are usually set up to generate electromagnetic radiation from the red to green spectral range.
  • the first blocking layer and / or the second blocking layer is formed from one or more materials of a material system that is different from the material system of the materials of the remaining epitaxial semiconductor layer sequence. Due to the different properties of different material systems, blocking layers can advantageously be achieved that effectively prevent the migration of crystal defects into the active area.
  • the first blocking layer and / or the second blocking layer is formed from one or more materials of the material system of the phosphide compound semiconductors, while the remaining epitaxial semiconductor layer sequence is formed from one or more materials of the material system of the arsenide compound semiconductors.
  • the epitaxial semiconductor layer sequence is formed entirely from materials from the material system of the arsenide compound semiconductors.
  • all layers of the epitaxial semiconductor layer sequence have an arsenide compound semiconductor material or consist of an arsenide compound semiconductor material.
  • the Blockage layers of one or more materials from the material system of the arsenide compound semiconductor have an arsenide compound semiconductor material or consist of an arsenide compound semiconductor material.
  • the first blocking layer and the second blocking layer are of identical design, except for the doping.
  • the first blocking layer and the second blocking layer are particularly preferably designed to be identical with regard to their composition, their thickness and / or the number or configuration of their individual layers.
  • the first blocking layer and / or the second blocking layer at least one compressively stressed indium-containing single layer of the material system In x Al y Ga xy ASI z P z with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇
  • the first blocking layer and / or the second blocking layer has at least one tensile-stressed phosphorus-containing single layer of the material system In x Al y Ga xy ASI z P z with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 0.2, x + y ⁇ 1 or is formed from such a single layer.
  • the active region is a single layer sequence with individual layers, which, for each of a material from the material system In x Al y Ga x y ASI z P with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 , 0 ⁇ z ⁇ 0.2, x + y ⁇ 1 have or consist of such a material. It is also possible for the active area to consist of such an individual layer sequence.
  • the first blocking layer and / or the second blocking layer have, for example, a sequence of individual layers that is similar to the sequence of individual layers of the active area, except for the doping, aluminum content, indium content and / or phosphorus content of the individual layers.
  • the first blocking layer and / or the second blocking layer preferably have a sequence of individual layers which is designed in the same way as the sequence of individual layers of the active region except for the doping and the ratio of aluminum content to gallium content.
  • the individual layer sequences of the first blocking layer and / or the second blocking layer differ only in the aluminum content of the individual layers, while the indium content and the phosphorus content are also the same.
  • the sequence of individual layers of the first blocking layer and / or the second blocking layer is designed to be identical, in particular with regard to the thickness, number and arrangement of the individual layers.
  • the first blocking layer and / or the second blocking layer are doped according to the first conductivity type and / or the second conductivity type, in contrast to the active region, which is designed to be intrinsically doped.
  • the first blocking layer and / or the second blocking layer consists of a single layer, which is designed in the same way as one of the single layers of the active region except for the doping and / or the layer thickness and / or the ratio of aluminum content to gallium content.
  • the active region has a single layer sequence which has a multiplicity of quantum film layers and a multiplicity
  • the quantum film barrier layers are particularly preferably designed to be braced relative to the quantum film layers.
  • the quantum well layers and the quantum barrier layers have, in this embodiment of the radiation-emitting semiconductor chip materials from the material system In x Al y Ga x y ASI z P z with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 0.2 , x + y ⁇ 1.
  • the first blocking layer and / or the second blocking layer have, for example, a sequence of individual layers that is similar to the sequence of individual layers of the active area, except for the doping, aluminum content, indium content and / or phosphorus content of the individual layers.
  • the first blocking layer and / or the second blocking layer preferably have a sequence of individual layers which is designed in the same way as the sequence of individual layers of the active region except for the doping and the ratio of aluminum content to gallium content. It is particularly preferred that the individual layer sequences of the first blocking layer and / or the second blocking layer differ only in terms of Aluminum content of the individual layers, while the indium content and the phosphorus content are also the same.
  • the first blocking layer and / or the second blocking layer consists of a single layer that is more compressively stressed than the most compressively stressed individual layer of the active area or is more tensile stressed than the most tensilely stressed individual layer of the active Area.
  • the active area has an individual layer sequence with individual layers, each of which comprises a material from the material system In x Al y Gai- xy As with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, x + y ⁇ 1 exhibit.
  • the first blocking layer and / or the second blocking layer has a single layer sequence which has an indium content and a thickness like the single layer sequence of the active area. This makes it easier to control the
  • the ratio of In to In + Al + Ga is between 8.5% and 9% inclusive.
  • the thickness of the first blocking layer and / or the second blocking layer is approximately 4 nanometers, for example.
  • the ratio of Al to Ga in the first blocking layer and / or second preferably differs from the ratio of Al to Ga in the individual layer sequence of the active region.
  • the gallium content in the first blocking layer and / or the second blocking layer is preferably lower than in the active area. So can the absorption of electromagnetic radiation in the first blocking layer and / or the second blocking layer can be reduced.
  • the sum of the gallium content and aluminum content in the first blocking layer and / or the second blocking layer is preferably equal to the sum of the gallium content and aluminum content in the active region. In other words, some of the gallium in the first blocking layer and / or the second blocking layer is replaced by aluminum compared to the active area.
  • the active region has an indium content of at least 13%. Aging of the radiation-emitting semiconductor chip can also be reduced in this way.
  • the radiation-emitting semiconductor chip comprises a reflective layer which is arranged on a first main surface of the epitaxial semiconductor layer sequence, the first main surface of the epitaxial semiconductor layer sequence facing away from a main surface of the semiconductor chip that emits radiation during operation.
  • the reflective layer is preferably designed to be specularly reflective at least for the electromagnetic radiation generated in the active region.
  • the reflective layer preferably does not completely cover the first main area of the epitaxial semiconductor layer sequence.
  • the epitaxial semiconductor layer sequence has a recess starting from the first main area of the epitaxial semiconductor layer sequence.
  • the recess breaks through the first blocking layer or the second blocking layer.
  • the radiation-emitting semiconductor chip comprises a first electrical contact structure for impressing charge carriers into the epitaxial semiconductor layer sequence.
  • the first electrical contact structure is preferably arranged on a second main area of the epitaxial semiconductor layer sequence, which is opposite the first main area.
  • the recess and the first contact structure preferably overlap in plan view.
  • the radiation-emitting semiconductor chip comprises a second electrical contact structure for impressing charge carriers into the epitaxial semiconductor layer sequence.
  • the second electrical contact structure is preferably arranged on the first main area of the epitaxial semiconductor layer sequence.
  • the second contact structure has a multiplicity of contact points or is formed from a multiplicity of contact points.
  • the contact structure it is also possible for the contact structure to be designed as a layer. If the first main area has a reflective layer, this is preferably only applied in areas of the first main area of the epitaxial semiconductor layer sequence which are free from the second contact structure.
  • the radiation-emitting semiconductor chip comprises a
  • Antireflection layer and / or a light coupling-out layer the main area that emits radiation during operation.
  • the light coupling-out layer is, for example, roughened.
  • the radiation-emitting semiconductor chip is, for example, a laser or a light-emitting diode.
  • the radiation-emitting semiconductor chip is provided and set up to be used in a device for iris recognition, in a device for driver monitoring or in the sensor area.
  • the radiation-emitting semiconductor chip is based, inter alia, on the idea of providing a first blocking layer and / or a second blocking layer within the epitaxial semiconductor layer sequence, which at least reduces migration of crystal defects into the active region.
  • the first blocking layer and / or the second blocking layer particularly preferably prevents the migration of crystal defects in the active region.
  • crystal defects within the active area it is possible that less electromagnetic radiation is generated. If the crystal defects are macroscopically unevenly distributed or even localized in plan view, then dark areas, lines or points can form in the luminous image of the radiation-emitting semiconductor chip.
  • the crystal defects can serve as non-radiating recombination centers in the active area, so that a loss channel is created for the recombination of introduced charge carriers.
  • the first blocking layer and / or the second blocking layer can Crystal defects in the active area can be reduced with advantage. This leads to a higher aging stability of the radiation-emitting semiconductor chip.
  • the first blocking layer and / or the second blocking layer preferably have similar or identical properties to the active area. If crystal defects are captured or retained by the active area, they are usually also advantageously captured by blocking layers which have the same or similar properties as the active area.
  • FIGS. 1 to 4 each show a schematic sectional illustration of a radiation-emitting semiconductor chip in accordance with an exemplary embodiment.
  • the radiation-emitting semiconductor chip according to the exemplary embodiment in FIG. 1 comprises an epitaxial semiconductor layer sequence 7.
  • the epitaxial semiconductor layer sequence 7 is formed entirely from epitaxially grown semiconductor layers.
  • the epitaxial semiconductor layer sequence 7 is formed from materials of the material system of the arsenide compound semiconductors.
  • the materials of the epitaxial semiconductor layer sequence 7 obey the following formula: In x Al y Ga z P xy ASI z with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ z ⁇ 0.02, x + y ⁇ 1.
  • the epitaxial semiconductor layer sequence 7 comprises a first doped region 2 and a second doped region 3.
  • An active region 1, which is set up to generate electromagnetic radiation, is arranged between the first doped region 2 and the second doped region 3.
  • the active area 1 generates red to infrared electromagnetic radiation when the radiation-emitting semiconductor chip is in operation.
  • the active area 1 is not specifically doped. In other words, the active region 1 is only intrinsically doped.
  • the active region 1 comprises a single layer sequence 15 with a multiplicity of single layers 16.
  • the single layers 16 are designed as quantum film layers 18 and quantum film barrier layers 19.
  • the quantum film layers 18 and the quantum film barrier layers 19 are arranged alternately with one another within the individual layer sequence 16 of the active region 1.
  • the first doped region 2 of the epitaxial semiconductor layer sequence 7 of the radiation-emitting semiconductor chip according to the exemplary embodiment in FIG. 1 has a first blocking layer 5 which is suitable for the migration of crystal defects 4 of the epitaxial semiconductor layer sequence 7 through the first blocking layer 5 to suppress through and thus to prevent the crystal defects 4 from getting into the active region 1.
  • the second doped region 3 of the epitaxial semiconductor layer sequence 7 of the radiation-emitting semiconductor chip according to the exemplary embodiment in FIG. 1 has a second blocking layer 6.
  • the second blocking layer 6 is also suitable for suppressing the migration of crystal defects 4 of the epitaxial semiconductor layer sequence 7 through the second blocking layer 6 and thus preventing the crystal defects 4 from migrating into the active region 1.
  • the first blocking layer 5 and the second blocking layer 6 are embodied in the present case in a doped manner.
  • the first doped region 2 of the epitaxial semiconductor layer sequence 7 and the first blocking layer 5 are in the present case n-doped, while the second doped region 3 and the second blocking layer 6 are p-doped.
  • the first blocking layer 5 and / or the second blocking layer 6 are formed from materials of the same material system as the remaining epitaxial semiconductor layer sequence 7, that is to say from materials of the material system of the arsenide compound semiconductors.
  • the first blocking layer 5 and the second blocking layer 6 are embodied in the present case in the same way except for the doping.
  • the first blocking layer 5 and the second blocking layer 6 are embodied in the same way as the active area 1 except for the doping and the aluminum content.
  • the first blocking layer 5 and the second blocking layer 6 are each made of one Single layer sequence 17 formed which the
  • Individual layer sequence 15 of the active region 1 corresponds to, except for the doping and the aluminum content.
  • the first blocking layer 5 and the second blocking layer 6, like the active region 1, are each composed of a single layer sequence 17 composed of alternately arranged quantum film layers 18 and
  • Quantum film barrier layers 19 are formed and differ from the quantum film layers 18 and the quantum film barrier layers 19 of the individual layer sequence 15 of the active region 1 only in terms of the doping and the aluminum content.
  • the aluminum content of the first blocking layer 5 and the second blocking layer 6 is greater than the aluminum content of the active area 1. In this way, the first blocking layer 5 and the second blocking layer 6 are permeable to the electromagnetic radiation that occurs during operation of the radiation-emitting semiconductor chip the active area 1 is generated.
  • a first main area 22 of the radiation-emitting semiconductor chip that emits radiation during operation has a coupling-out layer 13.
  • the coupling-out layer 13 is a roughening.
  • the coupling-out layer 13 can, however, also have a different structure.
  • the coupling-out layer 13 can also be designed to be antireflective.
  • a first main area 20 of the epitaxial semiconductor layer sequence 7 is provided with a recess 14 in the present case.
  • the recess 14 improves the Current impression in the epitaxial semiconductor layer sequence 7.
  • the recess 14 reduces the thickness of the epitaxial semiconductor layer sequence 7 in the area of the first contact structure 11 and thus leads to an advantageous charge carrier distribution in the epitaxial semiconductor layer sequence 7, in which the generation of electromagnetic radiation in the part of the active area 1 which overlaps with the first contact structure 11 in plan view is reduced.
  • the first main area 20 of the epitaxial semiconductor layer sequence 7 furthermore comprises a reflective layer 12.
  • the reflective layer 12 is set up to direct electromagnetic radiation of the active region 1 to the radiation-emitting main area 22 of the radiation-emitting semiconductor chip and thus to increase its efficiency.
  • a first contact structure 11 is furthermore arranged, which overlaps with the recess 14 in plan view.
  • the first contact structure 11 is designed, for example, as a contact finger and is suitable for impressing charge carriers into the epitaxial semiconductor layer sequence 7.
  • a second contact structure 10 which is suitable for impressing charge carriers in the epitaxial semiconductor layer sequence 7 during operation of the radiation-emitting semiconductor chip, is applied to the first main surface 20 of the epitaxial semiconductor layer sequence 7.
  • the second contact structure 10 is made up of contact points educated.
  • the reflective layer 12 is only formed between the contact points of the second contact structure 10.
  • the radiation-emitting semiconductor chip according to the exemplary embodiment in FIG. 1 comprises a carrier 8 which is fastened to the epitaxial semiconductor layer sequence 7 with a joining layer 9, for example a metal layer.
  • the carrier 8 is attached to the epitaxial semiconductor layer sequence 7 with the aid of eutectic bonding.
  • the radiation-emitting semiconductor chip according to the exemplary embodiment in FIG. 2 in contrast to the radiation-emitting semiconductor chip according to the exemplary embodiment in FIG. 1, has an epitaxial semiconductor layer sequence 7, the first blocking layer 5 and the second blocking layer 6 of which are formed from a semiconductor material that is different from the semiconductor material of the remaining epitaxial Semiconductor layer sequence 7 is different.
  • the epitaxial semiconductor layer sequence 7 comprises materials from the material system of the arsenide compound semiconductors.
  • the first blocking layer 5 and the second blocking layer 6 are formed from one or more materials of the material system of the phosphide compound semiconductors.
  • the second blocking layer 6 is in this way within the second doped region 3 arranged so that the second blocking layer 6 is broken through by the recess 14.
  • the radiation-emitting semiconductor chip according to the exemplary embodiment in FIG. 3 has a first blocking layer 5 and a second blocking layer 6, each of which is only formed from a single stressed individual layer 16.
  • the individual layer 16 here also has a material from the material system of the arsenide compound semiconductors.
  • the first blocking layer 5 and / or the second blocking layer 6 is designed to be tensile or compressively stressed.
  • the radiation-emitting semiconductor chip according to the exemplary embodiment in FIG. 4 has only a first n-doped blocking layer 5, which is arranged in a first n-doped region 2.
  • the first n-doped blocking layer 5 of the radiation-emitting semiconductor chip in accordance with the exemplary embodiment in FIG. 4 is formed, for example, from GaInP, which is grown epitaxially on a gallium arsenide substrate in a lattice-matched manner.
  • the first blocking layer 5 in the first n-doped region 2 AlGalnAs with a Has indium content of at least 2.5% or consists of such a material can be at least 7%.
  • the n-doped first blocking layer 5 consists of AlGalnAs or has this material and, within the scope of the process fluctuations and setting accuracy, has the same indium content as the active area 1. To avoid absorption of electromagnetic radiation that occurs in the active area 1 is generated, however, part of the gallium is replaced by aluminum.
  • a thickness of the first n-doped blocking layer 5 is equal to a thickness of an individual layer sequence 15 comprising the active region 1.
  • the second contact structure 10 is designed as a thin contact layer in the present exemplary embodiment.
  • the second contact structure 10 is formed from a transparent conductive oxide (TCO for short).

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  • Led Devices (AREA)

Abstract

L'invention concerne une puce à semi-conducteur émettrice de rayonnement présentant une succession de couches semi-conductrices épitaxiales (7), qui comprend les caractéristiques suivantes : • - une première région dopée (2) d'un premier type de conductance, • - une seconde région dopée (3) d'un second type de conductance, • - une région active (1) qui est disposée entre la première région dopée (2) et la seconde région dopée (3) et qui est conçue pour générer un rayonnement électromagnétique, • - au moins une première couche de blocage (5) qui est disposée dans la première région dopée (2) et est dopée selon le premier type de conductance et/ou • - au moins une seconde couche de blocage (6) qui est disposée dans la seconde région dopée (3) et est dopée selon le second type de conductance, • - la première couche de blocage (5) et/ou la seconde couche de blocage (6) réduisant au moins une migration de défauts cristallins (4) dans la région active (1).
PCT/EP2020/083888 2019-12-05 2020-11-30 Puce à semi-conducteur émettrice de rayonnement WO2021110585A1 (fr)

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DE102019133214.1A DE102019133214A1 (de) 2019-12-05 2019-12-05 Strahlungsemittierender Halbleiterchip
DE102019133214.1 2019-12-05

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CN108808446A (zh) * 2018-06-27 2018-11-13 潍坊华光光电子有限公司 一种具有位错折断结构的GaN基激光器外延结构及其生长方法
US20190019918A1 (en) * 2017-07-17 2019-01-17 Commissariat A L'energie Atomique Et Aux Energies Alternatives Light-emitting diode comprising a stack with a thinned part, and method for developing the light-emitting diode
JP2019114772A (ja) * 2017-12-21 2019-07-11 旭化成エレクトロニクス株式会社 赤外線発光素子

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Publication number Priority date Publication date Assignee Title
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
EP1067594A2 (fr) * 1999-07-06 2001-01-10 Sharp Kabushiki Kaisha Dispositif à semiconducteur
DE102014113975A1 (de) * 2014-09-26 2016-03-31 Osram Opto Semiconductors Gmbh Elektronisches Bauelement
US20190019918A1 (en) * 2017-07-17 2019-01-17 Commissariat A L'energie Atomique Et Aux Energies Alternatives Light-emitting diode comprising a stack with a thinned part, and method for developing the light-emitting diode
JP2019114772A (ja) * 2017-12-21 2019-07-11 旭化成エレクトロニクス株式会社 赤外線発光素子
CN108808446A (zh) * 2018-06-27 2018-11-13 潍坊华光光电子有限公司 一种具有位错折断结构的GaN基激光器外延结构及其生长方法

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