WO2021097852A1 - 纳米银导电薄膜及其制备方法和电子装置 - Google Patents

纳米银导电薄膜及其制备方法和电子装置 Download PDF

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WO2021097852A1
WO2021097852A1 PCT/CN2019/120434 CN2019120434W WO2021097852A1 WO 2021097852 A1 WO2021097852 A1 WO 2021097852A1 CN 2019120434 W CN2019120434 W CN 2019120434W WO 2021097852 A1 WO2021097852 A1 WO 2021097852A1
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layer
conductive
preparation
photosensitive
nano
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PCT/CN2019/120434
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English (en)
French (fr)
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高菁
孟锴
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南昌欧菲显示科技有限公司
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Priority to PCT/CN2019/120434 priority Critical patent/WO2021097852A1/zh
Publication of WO2021097852A1 publication Critical patent/WO2021097852A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means

Definitions

  • This application relates to the field of conductive film technology, and in particular to a nano-silver conductive film, a preparation method thereof, and an electronic device used therein.
  • the etching method is a method of selectively etching or stripping the surface of the substrate or the surface covering film according to the mask pattern or design requirements.
  • the etching method is widely used in the semiconductor field, such as the display field and the integrated circuit field.
  • the etching method can be divided into dry etching and wet etching. Among them, wet etching is widely used in the etching of metal thin films and oxide thin films.
  • Wet etching is a technique in which the etching object is immersed in an etching solution for etching.
  • This application provides a method for preparing a nano-silver conductive film.
  • the preparation method of the nano-silver conductive film provided in the present application can prevent the etching solution remaining in the nano-silver conductive film from continuing to corrode the nano-silver conductive film, thereby improving the reliability of the nano-silver conductive film.
  • the application also provides a nano-silver conductive film prepared by the preparation method.
  • this application provides a method for preparing a nano-silver conductive film.
  • the preparation method of nano silver conductive film includes:
  • a conductive layer is formed on the substrate by a first material; wherein the first material includes a photosensitive material;
  • the conductive pattern layer is irradiated with first ultraviolet light to make the photosensitive material alkaline.
  • the etching solution in the layer prevents the conductive pattern layer from being slowly corroded by the remaining etching solution, and greatly improves the reliability of the nano-silver conductive film.
  • the preparation method before the conductive layer is etched with an acidic etching solution to form a conductive pattern layer, and after the conductive layer is formed on the substrate by the first material, the preparation method further include:
  • a protective layer is formed on the conductive layer, and the protective layer is formed by coating a material with fluidity and then curing.
  • the protective layer can prevent the conductive layer from being oxidized.
  • the step of forming a protective layer on the conductive layer includes:
  • the wavelength band of the second ultraviolet light is different from the wavelength band of the first ultraviolet light. Different wavelengths of ultraviolet light are used so that the material in the conductive layer is not affected when the protective layer is cured.
  • the wavelength band of the first ultraviolet light is in the range of 320 nm to 380 nm, and the wavelength band of the second ultraviolet light is in the range of 200 nm to 320 nm;
  • the wavelength band of the first ultraviolet light is in the range of 200 nm to 320 nm
  • the wavelength band of the second ultraviolet light is in the range of 320 nm to 380 nm.
  • the conductive pattern layer is a nano silver wire conductive film
  • the etching solution is acidic
  • the photosensitive material is a photobase generator.
  • the photobase generator can neutralize the remaining acidic etching solution.
  • the photosensitive material contains a compound having a nitrogen atom and a conjugated multiple bond, and the conjugated multiple bond is shortened or disappeared under the irradiation of the first ultraviolet light.
  • the first ultraviolet light is formed by irradiating one or more of a low pressure mercury lamp, a medium pressure mercury lamp, a high pressure mercury lamp, an ultra high pressure mercury lamp, a xenon lamp, or a metal halide lamp.
  • this application also provides a method for preparing the nano-silver conductive film.
  • the preparation of nano silver conductive film includes:
  • a conductive layer is formed on the substrate by a second material; wherein the second material includes a conductive material;
  • the photosensitive layer is irradiated with first ultraviolet light to make the photosensitive material alkaline.
  • the preparation method before the conductive layer is etched with an acid etching solution to form a conductive pattern layer, and after a photosensitive layer is formed on the conductive layer by a photosensitive material, the preparation method further includes :
  • a protective layer is formed on the photosensitive layer, and the protective layer is formed by coating a material with fluidity and then curing.
  • the step of forming a photosensitive layer from a photosensitive material on the conductive layer includes:
  • the photosensitive material is cured at a preset temperature to form the photosensitive layer.
  • the conductive pattern layer is a nano silver wire conductive film
  • the etching solution is acidic
  • this application also provides a method for preparing the nano-silver conductive film.
  • the preparation method of nano silver conductive film includes:
  • a conductive layer is formed on the substrate by a second material; wherein the second material includes a conductive material;
  • a protective layer is formed on the conductive layer by a third material; wherein the third material includes a photosensitive material;
  • the protective layer is irradiated with first ultraviolet light to make the photosensitive material alkaline.
  • the conductive pattern layer is a nano silver wire conductive film
  • the etching solution is acidic
  • this application also provides a nano-silver conductive film.
  • the nano-silver conductive film is prepared according to the above-mentioned preparation method.
  • the nano-silver conductive film is applied to a touch screen, and the nano-silver conductive film is a touch component.
  • this application also provides an electronic device.
  • the electronic device includes the nano-silver conductive film as described above.
  • a photosensitive material is added to the conductive pattern layer, or the photosensitive layer covers the conductive pattern layer, so that the photosensitive material in the photosensitive layer becomes alkaline after being illuminated. Contrary to the acidity of the residual etching solution, it neutralizes the etching solution remaining in the conductive pattern layer, avoids the conductive pattern layer being slowly corroded by the residual etching solution, and greatly improves the reliability of the nano silver conductive film .
  • FIG. 1 is a schematic diagram of the structure of an electronic device provided by the present application.
  • FIG. 2 is a schematic diagram of the steps in the first embodiment of the method for preparing the nano-silver conductive film provided by the present application;
  • FIG. 3 is a schematic diagram of a process flow of preparing a nano-silver conductive film by using the preparation method of the first embodiment
  • FIG. 4 is a schematic diagram of steps in the second embodiment of the preparation method of the nano-silver conductive film provided by the present application;
  • FIG. 5 is a schematic diagram of a process flow for preparing a nano-silver conductive film by using the preparation method of the second embodiment
  • FIG. 6 is a schematic flowchart of step S220 shown in FIG. 4;
  • FIG. 7 is a schematic diagram of the steps in the third embodiment of the preparation method of the nano silver conductive film provided by the present application.
  • FIG. 8 is a schematic diagram of a process flow of preparing a nano-silver conductive film by using the preparation method of the third embodiment
  • FIG. 9 is a schematic flowchart of step S320 shown in FIG. 4;
  • FIG. 10 is a schematic diagram of the steps in the fourth embodiment of the preparation method of the nano-silver conductive film provided by the present application.
  • FIG. 11 is a schematic diagram of a process flow of preparing a nano-silver conductive film by using the preparation method of the fourth embodiment.
  • the embodiment of the present application provides an electronic device.
  • the electronic device includes a nano-silver conductive film.
  • Electronic devices can be mobile phones, large-size displays, tablet computers, e-readers, notebook computers, in-vehicle devices, or wearable devices.
  • Nano silver conductive film is used in touch screens, display screens or touch components in touch screens.
  • the application of the nano-silver conductive film to the touch component in the touch screen is taken as an example for description.
  • FIG. 1 is a schematic diagram of the structure of the nano silver conductive film applied to a touch screen provided by the present application.
  • the touch screen 100 includes a cover plate 10, a nano-silver conductive film 20, and a display assembly 30 that are stacked in sequence.
  • the cover plate 10 and the nano-silver conductive film 20 are both located on the light-emitting side of the display assembly 30.
  • the display unit 30 is used to display a screen.
  • the cover plate 10 faces the user.
  • the cover plate 10 plays a role of protecting the nano-silver conductive film 20 and the display assembly 30 on the one hand, and on the other hand, it can be printed with different colors, patterns, and markers to decorate and beautify the touch screen.
  • the nano-silver conductive film 20 when the nano-silver conductive film 20 is a touch screen, the nano-silver conductive film 20 can be a touch sensing component for sensing the touch operation of the contact.
  • the contact may be a user's finger, a stylus, etc.
  • the nano-silver conductive film 20 is located between the display assembly 30 and the cover plate 10, which can reduce the distance between the nano-silver conductive film 20 and the contacts, thereby improving the touch sensing performance .
  • the nano-silver conductive film 20 can also be integrated into the display assembly 30.
  • the display assembly 30 may be an in-cell touch screen, which makes the touch screen thinner and lighter. The embodiment of the present application does not limit the specific position of the display component 30 relative to the nano-silver conductive film 20.
  • FIG. 2 is a schematic diagram of the steps in the first embodiment of the preparation method of the nano-silver conductive film provided by this application;
  • FIG. 3 is the preparation method of the nano-silver conductive film by the preparation method of the first embodiment Schematic diagram of the process flow.
  • the nano silver conductive film 20 includes a substrate 21.
  • the preparation method of nano silver conductive film includes:
  • a conductive layer 220 is formed on the substrate 21 by using a first material; wherein the first material includes a photosensitive material.
  • the base 21 can be made of a hard material (for example, a glass substrate), and can also be made of a flexible material (for example, a polymer). In this embodiment, it is described by taking the base 21 using a flexible material as an example.
  • the substrate 21 is made of cyclic olefin polymer (COP), polyethylene terephthalate (PET), polycarbonate (PC), or polymethyl methacrylate ( Polymethyl methacrylate, PMMA) and other flexible materials.
  • COP cyclic olefin polymer
  • PET polyethylene terephthalate
  • PC polycarbonate
  • PMMA polymethyl methacrylate
  • the substrate 21 is made of a flexible material, which improves the bendability of the nano-silver conductive film 20, which is beneficial to be applied to products such as flexible display screens and large-size touch screens.
  • the first material includes not only conductive materials, but also photosensitive materials, such as photobase generators.
  • photosensitive materials such as photobase generators.
  • the photosensitive material forms the photosensitive layer 230. As shown in FIG. 3, the photosensitive layer 230 is located in the conductive layer 220.
  • the conductive layer 220 is formed on the substrate 21, and the photosensitive material and the conductive material can be coated on the substrate 21 and then mixed to form a composite layer of the conductive layer 220 and the sensing layer 230.
  • the photosensitive material is added to the conductive material as an additive, so that the photosensitive layer 230 is provided in the conductive layer 220.
  • the photosensitive material can be cured under a certain wavelength of light (for example, ultraviolet light), and the photosensitive material can also be thermally cured.
  • S120 Use an acid etching solution to etch the conductive layer 220 to form the conductive pattern layer 22.
  • the conductive pattern layer 22 is the final form of the conductive layer 220 after patterning through an etching process.
  • the photosensitive material can also be etched by the etching solution.
  • the conductive pattern layer 22 includes a conductive pattern layer 22 and a patterned photosensitive layer 23 formed after the conductive layer 220 and the photosensitive layer 230 are patterned through an etching process.
  • the preparation method of the nano-silver conductive film further includes: forming an anti-etching solution protective layer, and curing the anti-etching solution protective layer by heating.
  • the projection of the anti-etching solution protection layer on the substrate 21 is the projection of the etched conductive pattern layer 22 on the substrate 21. In this step, the purpose of development is achieved.
  • the conductive layer 220 When the conductive layer 220 is etched with the etching solution, the conductive layer 220 that is not protected by the anti-etching solution protection layer will be etched out, and finally the patterned conductive pattern layer 22 is obtained.
  • the conductive layer 220 is patterned by developing and etching processes to form the conductive pattern layer 22.
  • the alkalinity of the photosensitive material after being irradiated by the first ultraviolet light is opposite to the acidity of the etching solution.
  • a photosensitive layer 230 including a photosensitive material is added to the conductive layer 220, so that the conductive pattern layer 22 exhibits alkalinity under the irradiation of the first ultraviolet light opposite to the acidity of the etching solution, thereby neutralizing
  • the etching solution remaining in the conductive pattern layer 22 prevents the remaining etching solution from continuing to corrode the conductive pattern layer 22, thereby improving the reliability of the nano-silver conductive film.
  • the photosensitive material is directly located in the conductive pattern layer 22, and under the irradiation of the first ultraviolet light, the residual etching solution in the conductive pattern layer 22 can be quickly and effectively neutralized, thereby improving the reliability of the nano-silver conductive film.
  • the nano-silver conductive film can be etched by an acidic etching solution
  • the acidic etching solution is used to etch the nano-silver conductive film
  • a photosensitive material that is alkaline under light is used.
  • the purpose of neutralizing the acid etching solution remaining in the conductive pattern layer is achieved, thereby improving the reliability of the nano-silver conductive film.
  • the photosensitive material can use a photoacid generator that is acidic under light to neutralize the residue.
  • the purpose of the alkaline etching solution in the conductive pattern layer is to improve the reliability of the semiconductor device. That is, the acidity and alkalinity of the photosensitive material under light is opposite to the acidity and alkalinity of the etching solution, which can solve the etching solution remaining in the conductive pattern layer.
  • the preparation method of the nano-silver conductive film further includes:
  • a wiring layer 25 is formed on the insulating layer 24;
  • the dielectric layer 26 is imaged on the wiring layer 25.
  • the preparation method of the nano-silver conductive film further includes sequentially forming an insulating layer 24, a wiring layer 25, and a dielectric layer 26 on the conductive pattern layer 22.
  • the insulating layer 24 is located between the conductive pattern layer 22 and the wiring layer 25.
  • the dielectric layer 26 is located on the side of the wiring layer 25 away from the substrate 21. Among them, the dielectric layer 26 adopts an insulating material. The dielectric layer 26 can protect the wiring layer 25 and prevent the wiring layer 25 from being exposed to affect the performance of the nano-silver conductive film 20, thereby improving the performance of the nano-silver conductive film 20.
  • the wiring layer 25 is connected to each pattern in the conductive pattern layer 22 correspondingly, so that the signal of the conductive pattern layer 22 is transmitted to the circuit board, and the touch operation of the nano-silver conductive film 20 is realized.
  • the insulating layer 24 is located between the conductive pattern layer 22 and the wiring layer 25 to prevent each wiring in the wiring layer 25 from being electrically connected to the conductive pattern layer 22, causing the conductive pattern layer 22 to be short-circuited.
  • the nano-silver conductive film 20 is a touch component.
  • the conductive material used in the conductive pattern layer 22 is silver nanowire (AgNW). That is, the conductive pattern layer 22 is a nano silver wire conductive film.
  • the preparation process of the nano-silver conductive film is to coat a whole layer of nano-silver conductive layer 220 on a transparent substrate, and then pattern the nano-silver conductive layer 220 to form a transparent conductive layer with a nano-level silver wire conductive network pattern. film.
  • the conductive pattern layer 22 can also use other conductive materials, such as copper nanowires, or other etchable conductive materials.
  • nano-silver wires In addition to the excellent conductivity of silver, nano-silver wires also have nano-level size effects, excellent light transmittance and flexibility, and are widely used in large-size touch screens, flexible displays, touch screens, etc. product.
  • the nano silver conductive film 20 adopts nano silver wires instead of using ITO (Indium Tin Oxide) transparent conductive materials in the traditional technology, which not only reduces the cost of raw materials for the nano silver conductive film 20, but also simplifies the preparation process. At the same time, the light transmittance of the nano-silver conductive film 20 is also increased.
  • ITO Indium Tin Oxide
  • the diameter of the nano-silver wire is too thick, which will increase the haze of the conductive film of the nano-silver wire, and the diameter of the nano-silver wire is too small, which may easily cause the phenomenon of “open circuit” of the nano-silver wire.
  • the length of the nano silver wire is 20 ⁇ m to 150 ⁇ m, and the diameter is in the range of 10 nm to 60 nm. If the thickness of the substrate 21 is too thick, it is not conducive to actual production. If it is too thin, it will not be able to bear the load, and the conductive film of silver nanowires will be curled. Optionally, the thickness of the substrate 21 is in the range of 10um to 300um.
  • the substrate 21 includes one or more materials among resin, dispersant, thickener, or surfactant.
  • one or more of the resin, dispersant, thickener, or surfactant is a substance left over after the nano silver wire coating liquid is coated on the substrate 21 after drying.
  • the resin plays a role in the adhesion of the silver nanowires to the substrate 21 and reduces the migration of the silver nanowires.
  • the dispersant can uniformly disperse the silver nanowires to avoid aggregation of the silver nanowires.
  • the thickener adjusts the viscosity of the nano silver wire ink to facilitate coatability.
  • Surfactants increase the wettability of the surface of the silver nanowires and adjust the surface tension of the silver nanowires to facilitate coatability.
  • the substrate 21 includes one or more of resin, dispersant, thickener, or surfactant, which can improve the reliability of the conductive pattern layer 22.
  • the etching solution is acidic.
  • a mixture of hydrochloric acid and nitric acid is used to pattern the nano-silver conductive layer 220 to obtain the conductive pattern layer 22.
  • the specific type of the acid etching solution is not limited.
  • the photosensitive material is a photobase generator.
  • the photosensitive material contains a compound having nitrogen atoms and conjugated multiple bonds. The conjugated multiple bonds are shortened or disappeared under the irradiation of the first ultraviolet light.
  • the photosensitive material becomes alkaline.
  • the photosensitive material methylaminoisopropyl tropone, 2-isopropylamino tropone and so on.
  • the number of nitrogen atoms in the photosensitive material is not limited, and the specific types of conjugated multiple bonds in the photosensitive material are not limited.
  • the photosensitive material refers to a compound that develops alkalinity or increases alkalinity by irradiation of the first ultraviolet light.
  • alkalinity refers to the property of curing resin cured under the action of alkali.
  • Alkaline indicates that the pH of the material is greater than 7.0.
  • the photosensitive material contains a compound with nitrogen atoms and conjugated multiple bonds, which can effectively improve the efficiency of the photosensitive material to develop alkalinity under the irradiation of the first ultraviolet light, and can quickly and effectively neutralize acid etching.
  • the etching solution prevents the silver nanowires from being slowly corroded, and further improves the reliability of the transparent conductive film of the silver nanowires.
  • the photosensitive material is not only alkaline under the irradiation of the first ultraviolet light, but also can inhibit the generation of unnecessary by-products such as gas and water, which further improves the reliability of the transparent conductive film with nano silver wires.
  • the wavelength band of the first ultraviolet light is in the range of 320 nm to 380 nm.
  • the first ultraviolet light is formed by irradiating one or more of a low-pressure mercury lamp, a medium-pressure mercury lamp, a high-pressure mercury lamp, an ultra-high-pressure mercury lamp, a xenon lamp, or a metal halide lamp.
  • the wavelength band of the first ultraviolet light is ultraviolet light that is invisible to the naked eye, so as to avoid light pollution when the first ultraviolet light irradiates the nano-silver conductive film 20.
  • FIG. 4 is a schematic diagram of the steps in the second embodiment of the preparation method of the nano silver conductive film provided by this application;
  • FIG. 5 is the preparation method of the nano silver conductive film by the preparation method of the second embodiment Schematic diagram of the process flow. The following mainly describes the differences between this embodiment and the first embodiment, and most of the technical content of this embodiment that is the same as the foregoing embodiment will not be repeated hereafter.
  • the preparation method of nano silver conductive film includes:
  • a conductive layer 220 is formed on the substrate 21 by using a first material; wherein the first material includes a photosensitive material.
  • S220 forming a protective layer 27 on the conductive layer 220; wherein the protective layer 27 is formed by coating a material with fluidity and then curing.
  • the fluid material uses a resin that can be cured under the irradiation of light.
  • the resin can be used in combination with one or more of a thermoplastic resin, a thermosetting resin, and a second ultraviolet curable resin.
  • the types of fluid materials are not specifically limited.
  • the thermoplastic resin may be: polyethylene, polypropylene, polyvinyl chloride, polystyrene, polymethyl methacrylate, polyester, polyoxymethylene, polyamide, polyphenylene ether, and the like.
  • Thermosetting resins in addition to commonly used phenolic resins and epoxy resins, can also be unsaturated polyesters, amino resins and silicone ether resins, melamine formaldehyde resins, furan resins, polybutadiene resins, silicone resins, etc.
  • the second ultraviolet curing resin may be epoxy acrylic resin, polyurethane acrylic resin, polyester acrylic resin, polyether acrylic resin, pure acrylic resin, vinyl resin, and the like.
  • S230 Use an acid etching solution to etch the conductive layer 220 to form the conductive pattern layer 22.
  • S240 irradiate the conductive pattern layer 22 with the first ultraviolet light to make the photosensitive material alkaline.
  • the conductive layer 220 is a conductive film of silver nanowires
  • the silver nanowires are coated with an aqueous coating solution, the adhesion of the silver nanowires to the substrate 21 when coated on the substrate 21 is not strong. And the silver nanowires are not flat after curing. Therefore, coating the silver nanowires on the substrate 21 and then coating a protective layer 27 can not only increase the adhesion of the conductive layer 220 on the substrate 21, and avoid the migration of silver nanowires, In addition, it is possible to prevent the conductive layer 220 from being raised to cause defects in the upper layer material, thereby improving the reliability of the nano-silver conductive film 20.
  • the conductive layer 220 is etched by an etching solution, and the photosensitive layer 230 is irradiated with the first ultraviolet light after the conductive layer 220 is etched by the etching solution, which prevents the photosensitive layer 230 from being exposed to light.
  • the material exhibits alkaline prematurely, so that the photosensitive layer 230 exhibits alkaline after the conductive pattern layer 22 is etched by the etching solution, so as to effectively neutralize the etching solution remaining in the conductive pattern layer 22.
  • FIG. 6, is a schematic flowchart of step S220 shown in FIG. 4.
  • the step of forming the protective layer 27 on the conductive layer 220 includes:
  • S222 Adopt second ultraviolet light irradiation to cure the fluid material to form the protective layer 27; wherein, the wavelength band of the second ultraviolet light is different from the wavelength band of the first ultraviolet light.
  • the protective layer 27 and the photosensitive layer are cured in different time periods.
  • the waveband range where the second ultraviolet light is located is staggered with the waveband range where the first ultraviolet light is located.
  • the photosensitive layer needs to be alkaline after the conductive pattern layer 22 is etched, so that the subsequent photosensitive layer is The first ultraviolet light is irradiated with alkalinity to neutralize the etching solution remaining in the conductive pattern layer 22. Since the photosensitive layer needs to be alkaline after the conductive pattern layer 22 is etched under the irradiation of the first ultraviolet light, when the second ultraviolet light irradiates the protective layer 27, the photosensitive material in the photosensitive layer does not change and appears Alkaline.
  • the wavelength band of the first ultraviolet light is in the range of 320 nm to 380 nm
  • the wavelength band of the second ultraviolet light may be in the range of 200 nm to 320 nm.
  • the curing wavelength of the photosensitive layer 23 is 340 nm
  • the curing wavelength of the protective layer 27 is 254 nm.
  • the protective layer 27 may be a composition formed by mixing epoxy resin, tetrakis (mercaptoacetic acid) pentaerythritol ester, and N-methyl-2-cyanopyrrole.
  • the wavelength band of the second ultraviolet light is in the range of 320 nm to 380 nm, and the wavelength band of the first ultraviolet light is in the range of 200 nm to 320 nm.
  • the curing wavelength of the protective layer 27 is 365 nm, and the curing wavelength of the photosensitive layer 23 is 250 nm.
  • both the wavelength band of the first ultraviolet light and the wavelength band of the second ultraviolet light adopt ultraviolet light that is invisible to the naked eye, so as to avoid light pollution when the first ultraviolet light and the second ultraviolet light irradiate the nano-silver conductive film 20.
  • FIG. 7 is a schematic diagram of the steps in the third embodiment of the preparation method of the nano silver conductive film provided by the present application
  • FIG. 8 is the preparation method of the nano silver conductive film using the preparation method of the third embodiment Schematic diagram of the process flow. The following mainly describes the differences between this embodiment and the first embodiment, and most of the technical content of this embodiment that is the same as the foregoing embodiment will not be repeated hereafter.
  • the preparation method of nano silver conductive film includes:
  • S310 forming a conductive layer 220 on the substrate 21 by using a second material; wherein the second material includes a conductive material.
  • the conductive layer 220 includes a conductive material, but does not include a photosensitive material.
  • the conductive material used in the conductive pattern layer 22 is silver nanowire (AgNW). That is, the conductive pattern layer 22 is a nano silver wire conductive film.
  • S320 forming a photosensitive layer on the conductive layer 220 by using a photosensitive material.
  • the photosensitive layer and the conductive pattern layer 22 are located in different layer structures, and the photosensitive layer is located on the upper layer of the conductive pattern layer 22. As shown in FIG. 8, the photosensitive layer is located on the upper structure of the conductive layer 220.
  • a protective layer 27 is formed on the photosensitive layer, and the protective layer 27 is formed by coating a material with fluidity and then curing.
  • S340 Use an acid etching solution to etch the conductive layer 220 to form the conductive pattern layer 22.
  • the photosensitive material is then coated on the conductive layer 220 to form a photosensitive layer, so that the photosensitive layer is located between the conductive pattern layer 22 and the protective layer 27 In this way, the photosensitive material in the photosensitive layer can be prevented from affecting the performance of the conductive material in the conductive pattern layer 22, thereby improving the conductive performance of the conductive pattern layer 22.
  • FIG. 9 is a schematic flowchart of step S320 shown in FIG. 4.
  • the step of forming a photosensitive layer by a photosensitive material on the conductive layer 220 includes:
  • the photosensitive material before the conductive layer 220 is etched with the etching solution, the photosensitive material has been solidified, so as to avoid the loss of the photosensitive material caused by the etching solution during the etching process, so that the photosensitive material is The alkalinity exhibited under the irradiation of the first ultraviolet light can effectively neutralize the remaining etching solution, thereby improving the reliability of the nano-silver conductive film 20.
  • FIG. 10 is a schematic diagram of the steps in the fourth embodiment of the preparation method of the nano silver conductive film provided by the present application
  • FIG. 11 is the preparation method of the nano silver conductive film using the preparation method of the fourth embodiment Schematic diagram of the process flow. The following mainly describes the differences between this embodiment and the first embodiment, and most of the technical content of this embodiment that is the same as the foregoing embodiment will not be repeated hereafter.
  • the preparation method of nano silver conductive film includes:
  • S410 forming a conductive layer 220 on the substrate 21 by using a second material; wherein the second material includes a conductive material.
  • S420 forming a protective layer 27 on the conductive layer 220 by using a third material; wherein the third material includes a photosensitive material.
  • the photosensitive material used in the photosensitive layer and the fluid material used in the protective layer 27 are mixed and applied to the conductive pattern layer 22 together, so that the photosensitive layer is embedded in the protective layer 27. It is understandable that the third material includes not only fluid materials, but also photosensitive materials.
  • the photosensitive material is added to the fluid material as an additive, so that the photosensitive layer is located in the protective layer 27.
  • both photosensitive materials and fluid materials can be etched by the etching solution.
  • S430 Use an acid etching solution to etch the conductive layer 220 to form the conductive pattern layer 22.
  • the photosensitive material and the fluid material are mixed and coated on the conductive layer 220, so that the photosensitive layer is located in the protective layer 27, which can prevent the photosensitive material from being exposed to light.
  • the photosensitive material in the layer affects the performance of the conductive material in the conductive pattern layer 22, thereby improving the conductive performance of the conductive pattern layer 22.
  • the protective layer 27 and the photosensitive layer 23 are cured in a staggered range. That is, the protective layer 27 and the photosensitive layer 23 are cured under the irradiation of light of different wavelength bands. It is understandable that the protective layer 27 and the photosensitive layer 23 are cured in different time periods.
  • the wavelength range of curing of the protective layer 27 is staggered with the wavelength range of curing of the photosensitive layer 23, which prevents the photosensitive material in the photosensitive layer 23 from showing alkaline prematurely when the protective layer 27 is cured under light irradiation. Therefore, the photosensitive layer 23 is alkaline after the conductive pattern layer 22 is etched by the etching solution, and the etching solution remaining in the conductive pattern layer 22 is effectively neutralized.

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Abstract

一种纳米银导电薄膜（20）、纳米银导电薄膜（20）的制备方法以及一种包括纳米银导电薄膜（20）的电子装置。纳米银导电薄膜（20）的制备方法包括：在基底（21）上通过第一材料形成导电层（220）；其中，第一材料包括感光材料（S110）；采用酸性刻蚀液刻蚀导电层（220），以形成导电图案层（22）（S120）；采用第一紫外光照射导电图案层（22），以使感光材料呈碱性（S130）。纳米银导电薄膜（20）的制备方法能够避免残留在纳米银导电薄膜（20）中的刻蚀液继续腐蚀纳米银导电薄膜（20），从而提高制备纳米银导电薄膜（20）的可靠性。

Description

纳米银导电薄膜及其制备方法和电子装置 技术领域
本申请涉及导电膜技术领域，尤其涉及一种纳米银导电薄膜及其制备方法及使用之的电子装置。
背景技术
刻蚀方法是按照掩模图形或设计要求对基材表面或表面覆盖薄膜进行选择性腐蚀或剥离的方法。刻蚀方法广泛应用于半导体领域，例如：显示领域、集成电路领域。刻蚀方法可分为干法刻蚀和湿法刻蚀。其中，湿法刻蚀被广泛用于金属薄膜及氧化物薄膜的刻蚀。湿法刻蚀是将刻蚀物浸泡在刻蚀液内进行腐蚀的技术。
但是，采用湿法刻蚀存在刻蚀液清洗不干净的风险，导致部分刻蚀液残留在刻蚀物中，残留的刻蚀液会继续缓慢腐蚀刻蚀物，为后续成品导电膜及电子装置埋下隐患，影响导电膜及电子装置的可靠性。
发明内容
本申请提供了一种纳米银导电薄膜的制备方法。本申请提供的纳米银导电薄膜的制备方法能够避免残留在纳米银导电薄膜中的刻蚀液继续腐蚀纳米银导电薄膜，从而提高纳米银导电薄膜的可靠性。本申请还提供一种通过此制备方法制备的纳米银导电薄膜。
第一方面，本申请提供一种纳米银导电薄膜的制备方法。纳米银导电薄膜的制备方法包括：
在基底上通过第一材料形成导电层；其中，所述第一材料包括感光材料；
采用酸性刻蚀液刻蚀所述导电层，以形成导电图案层；
采用第一紫外光照射所述导电图案层，以使所述感光材料呈碱性。
采用在导电图案层中添加感光，或感光层覆盖导电图案层的方法，使感光层中的感光材料在光照后显现出的碱性与残留的蚀刻液的酸性相反，以中和残留在导电图案层中的刻蚀液，避免导电图案层被残留的刻蚀液缓慢腐蚀，很大 程度地提升纳米银导电薄膜的可靠性。
在一种实施方式中，在所述采用酸性刻蚀液刻蚀所述导电层，以形成导电图案层之前，且在所述在基底上通过第一材料形成导电层之后，所述制备方法还包括：
在所述导电层上形成保护层，所述保护层通过涂布具有流动性的材料后固化而成。保护层可以防止导电层被氧化。
在一种实施方式中，所述在所述导电层上形成保护层的步骤包括：
涂布流动性的材料覆盖所述导电层；
采用第二紫外光照射，固化所述流动性的材料，以形成所述保护层；
其中，所述第二紫外光的波段不同于所述第一紫外光的波段。采用不同波段的紫外光使得在固化保护层时不影响导电层中的物质。
在一种实施方式中，所述第一紫外光的波段在320nm至380nm范围内所述第二紫外光的波段在200nm至320nm范围内；
或者，所述第一紫外光的波段在200nm至320nm范围内，所述第二紫外光的波段320nm至380nm在范围内。这两个波段的紫外光最有利于材料的固化并且避免相互影响。
在一种实施方式中，所述导电图案层为纳米银线导电膜，所述刻蚀液呈酸性，感光材料为光产碱剂。光产碱剂可以中和掉残留的酸性蚀刻液。
在一种实施方式中，所述感光材料含有具有氮原子和共轭多重键的化合物，所述共轭多重键在所述第一紫外光的照射下缩短或消失。
在一种实施方式中，所述第一紫外光通过使用低压汞灯、中压汞灯、高压汞灯、超高压汞灯、氙灯或金属卤化物灯中的一者或多者照射而形成。
第二方面，本申请还提供一种纳米银导电薄膜的制备方法。纳米银导电薄膜的制备包括：
在基底上通过第二材料形成导电层；其中，所述第二材料包括导电材料；
在所述导电层上通过感光材料形成感光层；
采用酸性刻蚀液刻蚀所述导电层，以形成导电图案层；
采用第一紫外光照射所述感光层，以使所述感光材料呈碱性。
在一种实施方式中，在所述采用酸性刻蚀液刻蚀所述导电层，以形成导电 图案层之前，且在所述导电层上通过感光材料形成感光层之后，所述制备方法还包括：
在所述感光层上形成保护层，所述保护层通过涂布具有流动性的材料后固化而成。
在一种实施方式中，在所述导电层上通过感光材料形成感光层的步骤包括：
涂布所述感光材料于所述导电层；
在预设温度下固化所述感光材料，以形成所述感光层。
在一种实施方式中，所述导电图案层为纳米银线导电膜，所述刻蚀液呈酸性。
第三方面，本申请还提供一种纳米银导电薄膜的制备方法。纳米银导电薄膜的制备方法包括：
在基底上通过第二材料形成导电层；其中，所述第二材料包括导电材料；
在所述导电层上通过第三材料形成保护层；其中，所述第三材料包括感光材料；
采用酸性刻蚀液刻蚀所述导电层，以形成导电图案层；
采用第一紫外光照射所述保护层，以使所述感光材料呈碱性。
在一种实施方式中，所述导电图案层为纳米银线导电膜，所述刻蚀液呈酸性。
第四方面，本申请还提供一种纳米银导电薄膜。所述纳米银导电薄膜根据如上所述的制备方法制备而成。
在一种实施方式中，所述纳米银导电薄膜应用于触控屏，所述纳米银导电薄膜为触控组件。
第五方面，本申请还提供一种电子装置。所述电子装置包括如上所述的纳米银导电薄膜。
在本申请实施例中，纳米银导电薄膜在制备的过程中，采用在导电图案层中添加感光材料，或感光层覆盖导电图案层的方法，使感光层中的感光材料在光照后显现出碱性，与残留的蚀刻液的酸性相反，以中和残留在导电图案层中的刻蚀液，避免导电图案层被残留的刻蚀液缓慢腐蚀，很大程度地提升纳米银 导电薄膜的可靠性。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请提供的电子装置的结构示意图；
图2是本申请提供的纳米银导电薄膜的制备方法在第一实施方式中的步骤示意图；
图3是采用第一实施方式的制备方法制备纳米银导电薄膜的工艺流程示意图；
图4是本申请提供的纳米银导电薄膜的制备方法在第二实施方式中的步骤示意图；
图5是采用第二实施方式的制备方法制备纳米银导电薄膜的工艺流程示意图；
图6是图4所示S220步骤的流程示意图；
图7是本申请提供的纳米银导电薄膜的制备方法在第三实施方式中的步骤示意图；
图8是采用第三实施方式的制备方法制备纳米银导电薄膜的工艺流程示意图；
图9是图4所示S320步骤的流程示意图；
图10是本申请提供的纳米银导电薄膜的制备方法在第四实施方式中的步骤示意图；
图11是采用第四实施方式的制备方法制备纳米银导电薄膜的工艺流程示意图。
具体实施方式
本申请实施例提供一种电子装置。电子装置包括纳米银导电薄膜。电子装 置可以是手机、大尺寸显示器、平板电脑、电子阅读器、笔记本电脑、车载设备或可穿戴设备等设备。纳米银导电薄膜应用于触控屏、显示屏或触控屏中的触控组件。在本申请实施例中，以纳米银导电薄膜应用于触控屏中的触控组件为例来进行描写。
请参阅图1，图1是本申请提供的纳米银导电薄膜应用于触控屏中的结构示意图。触控屏100包括依次层叠设置的盖板10、纳米银导电薄膜20及显示组件30。盖板10及纳米银导电薄膜20均位于显示组件30的发光侧。显示组件30用于显示画面。当用户使用触控屏100时，盖板10面向用户。盖板10一方面起到保护纳米银导电薄膜20及显示组件30的作用，另一方面可印刷不同颜色、图案、标志物，起到装饰及美化触控屏的作用。
可以理解的，当纳米银导电薄膜20为触控屏时，纳米银导电薄膜20能够为触控感应组件，用于感应触头的触控操作。触头可以是用户手指、触控笔等。
如图1所示，在本申请实施例中，纳米银导电薄膜20位于显示组件30与盖板10之间，能够减小纳米银导电薄膜20与触头之间的距离，从而提升触摸感应性能。在其他实施例中，纳米银导电薄膜20也能够集成于显示组件30中，例如，显示组件30可以为嵌入式(in-cell)触摸显示屏，使的触摸屏更加轻薄。本申请实施例对显示组件30相对纳米银导电薄膜20的具体位置不作限定。
请继续参阅图2及图3，图2是本申请提供的纳米银导电薄膜的制备方法在第一实施方式中的步骤示意图；图3是采用第一实施方式的制备方法制备纳米银导电薄膜的工艺流程示意图。纳米银导电薄膜20包括基底21。
纳米银导电薄膜的制备方法包括：
S110：在基底21上通过第一材料形成导电层220；其中，第一材料包括感光材料。
基底21可以采用硬性材料(例如，玻璃基板)，也能够采用柔性材料(例如，聚合物)。在本实施例中，以基底21采用柔性材料为例来描写。例如，基底21采用环烯烃聚合物(cycio olefins polymer，COP)、聚对苯二甲酸乙二醇酯(polyethylene terephthalate，PET)、聚碳酸酯(polycarbonate，PC)、或聚甲基丙烯酸甲酯(polymethyl methacrylate，PMMA)等柔性材料。
在本实施方式中，基底21采用柔性材料，提高了纳米银导电薄膜20的可弯折性，有利于应用于柔性显示屏、大尺寸触控屏等产品。
可以理解的，在本申请第一实施方式中，第一材料不仅包括导电材料，同时也包括感光材料，例如光产碱剂，其作为一种新型的光引发剂,其光解后既能产生自由基引发自由基聚合,也能产生叔胺等碱性物质。感光材料形成感光层230。如图3所示，感光层230位于导电层220中。
在基底21上形成导电层220，能够在基底21上涂布感光材料与导电材料混合后混合材料，以形成导电层220与感应层230的复合层。
可以理解的，感光材料作为一种添加剂加入导电材料中，从而使得感光层230设在导电层220中。感光材料可以在一定波段光(例如，紫外光)的照射下固化，感光材料也能够热固化。
S120：采用酸性刻蚀液刻蚀导电层220，以形成导电图案层22。
可以理解的，导电图案层22是导电层220经过刻蚀工艺图案化后最终形态。感光材料也能够被刻蚀液刻蚀。如图3所示，导电图案层22包括导电层220及感光层230经过刻蚀工艺图案化后，形成的导电图案层22及图案化感光层23。
其中，在采用刻蚀液刻蚀导电层220之前，纳米银导电薄膜的制备方法还包括：形成抗刻蚀液保护层，并通过加热对抗刻蚀液保护层进行固化。
抗刻蚀液保护层在基底21上的投影为经过刻蚀后的导电图案层22在基底21上的投影。在此步骤中达到显影的目的。
采用刻蚀液刻蚀导电层220时，未被抗刻蚀液保护层保护的导电层220将被刻蚀取出，最终得到图案化的导电图案层22。
可以理解的，通过显影及刻蚀工艺，以使导电层220图案化，形成导电图案层22。
S130：采用第一紫外光照射导电图案层22，以使感光材料呈碱性。
可以理解的，感光材料经过第一紫外光的照射后呈现的碱性与刻蚀液呈现的酸性相反。
在本申请实施方式中，导电层220中增加包括感光材料的感光层230，使得导电图案层22在第一紫外光的照射下显现出的碱性与刻蚀液的酸性相反， 从而能够中和残留在导电图案层22中的刻蚀液，避免残留的刻蚀液继续腐蚀导电图案层22，从而提升了纳米银导电薄膜的可靠性。
并且，感光材料直接位于导电图案层22中，在第一紫外光的照射下，能够快速且有效地中和导电图案层22中残留的刻蚀液，从而提高了纳米银导电薄膜的可靠性。
可以理解的，在本申请实施例中，由于纳米银导电薄膜能够被酸性刻蚀液刻蚀，因此采用酸性刻蚀液刻蚀纳米银导电薄膜，并且采用在光照下呈碱性的感光材料，达到中和残留在导电图案层中的酸性刻蚀液目的，从而提高了纳米银导电薄膜的可靠性。在其他实施例中，当半导体组件在刻蚀过程中，当采用碱性的刻蚀液对半导体组件进行刻蚀时，感光材料能够采用在光照下呈酸性的光产酸剂，达到中和残留在导电图案层中的碱性刻蚀液目的，从而提升半导体组件的可靠性。也即，感光材料在光照下呈现的酸碱性与刻蚀液的酸碱性相反，就能解决残留在导电图案层中的刻蚀液。
如图3所示，在第一紫外光照射后，纳米银导电薄膜的制备方法，还包括：
在导电图案层22上形成绝缘层24；
在绝缘层24上形成走线层25；
在走线层25上成像介电层26。
可以理解的，纳米银导电薄膜的制备方法，还包括在导电图案层22上依次形成绝缘层24、走线层25及介电层26。
绝缘层24位于导电图案层22与走线层25之间。介电层26位于走线层25远离基底21的一侧。其中，介电层26采用绝缘材料。介电层26能够保护走线层25，避免走线层25外露而影响纳米银导电薄膜20的性能，从而提高了纳米银导电薄膜20的性能。
走线层25与导电图案层22中的各图案对应连接，使得导电图案层22的信号传递至电路板，实现纳米银导电薄膜20的触控操作。绝缘层24位于导电图案层22与走线层25之间，避免走线层25中的各走线均与导电图案层22电连接，造成导电图案层22短路。
在一种实施方式中，纳米银导电薄膜20为触控组件。导电图案层22采用 的导电材料为纳米银线(AgNW)。也即，导电图案层22为纳米银线导电膜。其中，纳米银导电薄膜的制备工艺是在一透明基板上涂覆一整层的纳米银导电层220，再将纳米银导电层220图案化，形成具有纳米级别银线导电网络图案的透明的导电薄膜。在其他实施方式中，导电图案层22也能够采用其他导电材料，例如：铜纳米线，或者其他可蚀刻导电材料。
由于纳米银线除了具有银优良的导电性之外，还具有纳米级别的尺寸效应，及优异的透光性、耐曲饶性，广泛地应用于大尺寸触控屏、柔性显示屏、触摸屏等产品。
在本申请实施例中，纳米银导电薄膜20采用纳米银线，替代传统技术中采用ITO(氧化铟锡)透明导电材料，不仅降低了纳米银导电薄膜20的原材料的成本，简化了制备工艺，同时也增加了纳米银导电薄膜20的透光率。
其中，纳米银线直径太粗，会增加纳米银线导电膜的雾度，纳米银线直径太细，易造成纳米银线“断路”现象。可选的，纳米银线的长度为20μm至150μm，直径为10nm至60nm范围内。基底21的厚度太厚不利于实际生产，太薄会起不到承载作用，做出纳米银线导电膜卷曲。可选的，基底21的厚度在10um至300um范围内。
在一种实施方式中，基底21包括树脂、分散剂、增稠剂或表面活性剂中的一种或多种材料。其中，树脂、分散剂、增稠剂或表面活性剂中的一种或多种材料是纳米银线涂布液涂布于基底21后经过烘干遗留下的物质。
其中，树脂起到纳米银线对基底21的附着性作用，减少纳米银线的迁移。分散剂能够均匀的分散纳米银线避免纳米银线的聚集。增稠剂调节纳米银线油墨的黏度，便于可涂布性。表面活性剂增加纳米银线表面的润湿性以及调节纳米银线的表面张力便于可涂布性。
在本申请实施例中，基底21包括树脂、分散剂、增稠剂或表面活性剂中的一种或多种材料，能够提高导电图案层22的可靠性。
相应地，刻蚀液呈酸性。例如：盐酸和硝酸的混合液，以图案化纳米银导电层220，得到导电图案层22。在本申请实施例中，对酸性刻蚀液的具体种类不做限定。
进一步地，感光材料为光产碱剂。感光材料含有具有氮原子和共轭多重键 的化合物。共轭多重键在第一紫外光的照射下缩短或消失。
可以理解的，当感光材料中的共轭多重键在第一紫外光的照射下缩短或消失后，感光材料呈碱性。例如：甲氨基异丙基环庚三烯酮、2-异丙氨基环庚三烯酚酮等。在本申请实施例中，对感光材料中含氮原子的数量不做限定，对感光材料中共轭多重键具体的种类也不做限定。
其中，感光材料指通过第一紫外光的照射而显现碱性或增大碱性的化合物。另外，碱性是指使在碱的作用下固化的树脂固化的性质。呈碱性表明材料的pH值大于7.0。
在本申请实施例中，感光材料含有具有氮原子和共轭多重键的化合物，能够有效地提高感光材料在第一紫外光的照射下显现碱性的效率，能够快速且有效地中和酸性刻蚀液，避免了纳米银线被缓慢腐蚀，进一步地提升纳米银线透明导电薄膜的可靠性。
其中，感光材料在第一紫外光的照射下不仅呈碱性，也能够抑制气体、水等不必要的副产物的产生，进一步地提高了提升纳米银线透明导电薄膜的可靠性。
在一种实施方式中，第一紫外光的波段在320nm至380nm范围内。例如，第一紫外光通过使用低压汞灯、中压汞灯、高压汞灯、超高压汞灯、氙灯或金属卤化物灯中的一者或多者照射而形成。
在本申请实施例中，第一紫外光的波段采用肉眼不可见的紫外光，避免第一紫外光照射纳米银导电薄膜20时产光污染。
请继续参阅图4及图5，图4是本申请提供的纳米银导电薄膜的制备方法在第二实施方式中的步骤示意图；图5是采用第二实施方式的制备方法制备纳米银导电薄膜的工艺流程示意图。以下主要说明本实施方式与第一实施方式的区别，本实施方式与前述实施方式相同的大部分技术内容后文不再赘述。
纳米银导电薄膜的制备方法包括：
S210：在基底21上通过第一材料形成导电层220；其中，第一材料包括感光材料。
其中，S210所包括的具体步骤参阅前述S110。
S220：在导电层220上形成保护层27；其中，保护层27通过涂布具有流 动性的材料后固化而成。
其中，流动性的材料采用能够在光的照射下而固化的树脂。树脂可以利用含有热塑性树脂、热固性树脂和第二紫外光固化树脂中的一种或者多种配合使用。在本申请实施例中，对流动性的材料的种类不做具体限定。
例如，热塑性树脂可为：聚乙烯、聚丙烯、聚氯乙烯、聚苯乙烯、聚甲基丙烯酸甲酯、聚酯、聚甲醛、聚酰胺、聚苯醚等。热固性树脂，除常用的酚醛树脂、环氧树脂以外，还可以为不饱和聚酯、氨基树脂以及硅醚树脂三聚氰胺甲醛树脂、呋喃树脂、聚丁二烯树脂、有机硅树脂等。第二紫外光固化树脂可为环氧丙烯酸树脂、聚氨酯丙烯酸树脂、聚酯丙烯酸树脂、聚醚丙烯酸树脂、纯丙烯酸树脂和乙烯基树脂等。
S230：采用酸性刻蚀液刻蚀导电层220，以形成导电图案层22。
其中，S230所包括的具体步骤参阅前述S120。
S240：采用第一紫外光照射导电图案层22，以使感光材料呈碱性。
其中，S240所包括的具体步骤参阅前述S130。可以理解的，保护层27的固化波段与感光层的固化波段不同。
在本申请实施例中，导电层220为纳米银线导电膜时，由于纳米银线采用水性涂液涂布而成，使得纳米银线涂布于基底21上时与基底21的附着并不牢固，并且纳米银线固化后不平整，因此，基底21上涂布纳米银线后再涂布一层保护层27，不仅能够增加导电层220在基底21上的附着力，避免纳米银线迁移，而且能够避免了导电层220凸起而造成上层材料缺陷，从而提高了纳米银导电薄膜20的可靠性。
并且，在形成有保护层27后再采用刻蚀液刻蚀导电层220，且在刻蚀液刻蚀导电层220之后再采用第一紫外光照射感光层230，避免了感光层230中的感光材料过早地呈现碱性，从而使得感光层230在刻蚀液刻蚀导电图案层22之后呈现碱性，以有效地中和残留在导电图案层22中的刻蚀液。
请继续参阅图6，图6是图4所示S220步骤的流程示意图。在导电层220上形成保护层27的步骤包括：
S221：涂布流动性的材料覆盖导电层220。
S222：采用第二紫外光照射，固化流动性的材料，以形成保护层27；其 中，第二紫外光的波段不同于第一紫外光的波段。
可以理解的，保护层27与感光层在不同的时段固化。第二紫外光所在的波段范围与第一紫外光所在的波段范围交错。
由于通过刻蚀液刻蚀导电图案层22是在保护层27通过第二紫外光固化后进行的，因此感光层需要在导电图案层22被刻蚀后再呈现碱性，以使后续感光层在第一紫外光的照射下呈现碱性，以中和残留在导电图案层22中的刻蚀液。基于感光层需要在导电图案层22被刻蚀后在第一紫外光的照射下才呈现碱性，因此在第二紫外光照射保护层27时，感光层中的感光材料不会发生变化而呈现碱性。
在一种实施方式中，第一紫外光的波段在320nm至380nm范围内，第二紫外光的波段可以在200nm至320nm范围内。例如，感光层23的固化波长在340nm，保护层27的固化波长为254nm。此时，保护层27可以采用环氧树脂、四(巯基乙酸)季戊四醇酯和N-甲基-2-氰基吡咯混合而成的组合物。
在另一种实施方式中，第二紫外光的波段在320nm至380nm范围内，第一紫外光的波段在200nm至320nm范围内。例如，保护层27的固化波长为365nm，感光层23的固化波长在250nm。
在本申请实施例中，第一紫外光的波段与第二紫外光的波段均采用肉眼不可见的紫外光，避免第一紫外光及第二紫外光照射纳米银导电薄膜20时产光污染。
请继续参阅图7及图8，图7是本申请提供的纳米银导电薄膜的制备方法在第三实施方式中的步骤示意图；图8是采用第三实施方式的制备方法制备纳米银导电薄膜的工艺流程示意图。以下主要说明本实施方式与第一实施方式的区别，本实施方式与前述实施方式相同的大部分技术内容后文不再赘述。
纳米银导电薄膜的制备方法包括：
S310：在基底21上通过第二材料形成导电层220；其中，第二材料包括导电材料。
可以理解的，在本实施方式中，导电层220包括导电材料，不包括感光材料。其中，导电图案层22采用的导电材料为纳米银线(AgNW)。也即，导电图案层22为纳米银线导电膜。
S320：在导电层220上通过感光材料形成感光层。
可以理解的，在本申请实施方式中，感光层与导电图案层22位于不同的层结构，感光层位于导电图案层22的上层。如图8所示，感光层位于导电层220的上层结构。
S330：在感光层上形成保护层27，保护层27通过涂布具有流动性的材料后固化而成。
其中，S330所包括的具体步骤参阅前述S220。
S340：采用酸性刻蚀液刻蚀导电层220，以形成导电图案层22。
其中，S340所包括的具体步骤参阅前述S120。
S350：采用所述第一紫外光照射导电图案层22，以使感光材料呈碱性。
其中，S350所包括的具体步骤参阅前述S130。可以理解的，保护层27的固化波段与感光层的固化波段不同。
在本申请实施例中，将导电材料涂布于基底21形成导电层220之后，再在导电层220上涂布感光材料，以形成感光层，使得感光层位于导电图案层22与保护层27之间，能够避免感光层中的感光材料影响导电图案层22中的导电材料的性能，从而提高导电图案层22的导电性能。
请继续参阅图9，图9是图4所示S320步骤的流程示意图。
在导电层220上通过感光材料形成感光层的步骤包括：
S321：涂布感光材料于导电层220；
S322：在预设温度下固化感光材料，以形成感光层230。
可以理解的，在本申请实施例中，在采用刻蚀液刻蚀导电层220之前，感光材料已经固化，避免在刻蚀过程中刻蚀液造成感光材料的流失，使得在刻蚀后感光材料在第一紫外光的照射下呈现的碱性，能够有效地中和残留的刻蚀液，从而提高纳米银导电薄膜20的可靠性。
请继续参阅图10及图11，图10是本申请提供的纳米银导电薄膜的制备方法在第四实施方式中的步骤示意图；图11是采用第四实施方式的制备方法制备纳米银导电薄膜的工艺流程示意图。以下主要说明本实施方式与第一实施方式的区别，本实施方式与前述实施方式相同的大部分技术内容后文不再赘述。
纳米银导电薄膜的制备方法包括：
S410：在基底21上通过第二材料形成导电层220；其中，第二材料包括导电材料。
其中，S410所包括的具体步骤参阅前述S310。
S420：在导电层220上通过第三材料形成保护层27；其中，第三材料包括感光材料。
其中，感光层采用的感光材料与保护层27采用的流动性的材料混合后一起涂布于导电图案层22，以使感光层嵌设于保护层27。可以理解的，第三材料不仅包括流动性的材料，也包括感光材料。
可以理解的，感光材料作为一种添加剂加入流动性的材料中，从而使得感光层位于保护层27中。其中，感光材料及流动性的材料均能够被刻蚀液刻蚀。
S430：采用酸性刻蚀液刻蚀导电层220，以形成导电图案层22。
其中，S430所包括的具体步骤参阅前述S120。
S440：采用第一紫外光照射保护层27，以使感光材料呈碱性。
其中，S440所包括的具体步骤参阅前述S130。可以理解的，保护层27的固化波段与感光层的固化波段不同。
在本申请实施例中，将导电材料涂布于基底21形成导电层220之后，将感光材料与流动性的材料混合涂布于导电层220，以使感光层位于保护层27中，能够避免感光层中的感光材料影响导电图案层22中的导电材料的性能，从而提高导电图案层22的导电性能。
其中，保护层27与感光层23固化的波段范围交错。也即，保护层27与感光层23在不同波段光的照射下而固化。可以理解的，保护层27与感光层23在不同的时段固化。
在本申请实施例中，保护层27固化的波段范围与感光层23固化的波段范围交错，避免了保护层27在光照射下固化时，感光层23中的感光材料过早地呈现碱性，从而使得感光层23在刻蚀液刻蚀导电图案层22之后呈现碱性，有效地中和残留在导电图案层22中的刻蚀液。
以上对本申请实施方式进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施方式的说明只是用于帮助理解本申请 的方法及其核心思想；同时，对于本领域的一般技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上，本说明书内容不应理解为对本申请的限制。

Claims (15)

  1. 一种纳米银导电薄膜的制备方法，其特征在于，包括：
    在基底上通过第一材料形成导电层；其中，所述第一材料包括感光材料；
    采用酸性刻蚀液刻蚀所述导电层，以形成导电图案层；
    采用第一紫外光照射所述导电图案层，以使所述感光材料呈碱性。
  2. 如权利要求1所述的制备方法，其特征在于，在所述采用酸性刻蚀液刻蚀所述导电层，以形成导电图案层之前，且在所述在基底上通过第一材料形成导电层之后，所述制备方法还包括：
    在所述导电层上形成保护层，所述保护层通过涂布具有流动性的材料后固化而成。
  3. 如权利要求2所述的制备方法，其特征在于，所述在所述导电层上形成保护层的步骤包括：
    涂布流动性的材料覆盖所述导电层；
    采用第二紫外光照射，固化所述流动性的材料，以形成所述保护层；
    其中，所述第二紫外光的波段不同于所述第一紫外光的波段。
  4. 如权利要求3所述的制备方法，其特征在于，所述第一紫外光的波段在320nm至380nm范围内，所述第二紫外光的波段在200nm至320nm范围内；
    或者，所述第一紫外光的波段在200nm至320nm范围内，所述第二紫外光的波段320nm至380nm在范围内。
  5. 如权利要求1-4中任一项所述的制备方法，其特征在于，所述导电图案层为纳米银线导电层，所述感光材料为光产碱剂。
  6. 如权利要求1-4中任一项所述的制备方法，其特征在于，所述感光材料含有具有氮原子和共轭多重键的化合物，所述共轭多重键在所述第一紫外光的照射下缩短或消失。
  7. 如权利要求5所述的制备方法，其特征在于，所述第一紫外光通过使用低压汞灯、中压汞灯、高压汞灯、超高压汞灯、氙灯或金属卤化物灯中的一者或多者照射而形成。
  8. 一种纳米银导电薄膜的制备方法，其特征在于，包括：
    在基底上通过第二材料形成导电层；其中，所述第二材料包括导电材料；
    在所述导电层上通过感光材料形成感光层；
    采用酸性刻蚀液刻蚀所述导电层，以形成导电图案层；
    采用第一紫外光照射所述感光层，以使所述感光材料呈碱性。
  9. 如权利要求8所述的制备方法，其特征在于，在所述采用酸性刻蚀液刻蚀所述导电层，以形成导电图案层之前，且在所述导电层上通过感光材料形成感光层之后，所述制备方法还包括：
    在所述感光层上形成保护层，所述保护层通过涂布具有流动性的材料后固化而成。
  10. 如权利要求8所述的制备方法，其特征在于，在所述导电层上通过感光材料形成感光层的步骤包括：
    涂布所述感光材料于所述导电层；
    在预设温度下固化所述感光材料，以形成所述感光层。
  11. 如权利要求8-10中任一项所述的制备方法，其特征在于，所述导电图案层为纳米银线导电层，所述感光材料为光产碱剂。
  12. 一种纳米银导电薄膜的制备方法，其特征在于，包括：
    在基底上通过第二材料形成导电层；其中，所述第二材料包括导电材料；
    在所述导电层上通过第三材料形成保护层；其中，所述第三材料包括感光材料；
    采用酸性刻蚀液刻蚀所述导电层，以形成导电图案层；
    采用第一紫外光照射所述保护层，以使所述感光材料呈碱性。
  13. 如权利要求12所述的制备方法，其特征在于，所述导电图案层为纳米银线导电层，所述感光材料为光产碱剂。
  14. 一种纳米银导电薄膜，其特征在于，所述纳米银导电薄膜根据权利要求1-13中任一项所述的制备方法制备而成。
  15. 一种电子装置，其特征在于，包括如权利要求14所述的纳米银导电薄膜。
PCT/CN2019/120434 2019-11-22 2019-11-22 纳米银导电薄膜及其制备方法和电子装置 WO2021097852A1 (zh)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101553549A (zh) * 2006-12-14 2009-10-07 旭化成电子材料株式会社 光产碱剂和光固化性树脂组合物
JP2009256630A (ja) * 2008-03-18 2009-11-05 Hitachi Chem Co Ltd 接着シート
CN103048876A (zh) * 2011-10-11 2013-04-17 三星电子株式会社 形成半导体器件的图案的方法
CN103268180A (zh) * 2013-05-02 2013-08-28 苏州欧菲光科技有限公司 触摸屏感应组件及其制作方法
CN110189986A (zh) * 2018-02-23 2019-08-30 台湾积体电路制造股份有限公司 半导体装置结构的形成方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101553549A (zh) * 2006-12-14 2009-10-07 旭化成电子材料株式会社 光产碱剂和光固化性树脂组合物
JP2009256630A (ja) * 2008-03-18 2009-11-05 Hitachi Chem Co Ltd 接着シート
CN103048876A (zh) * 2011-10-11 2013-04-17 三星电子株式会社 形成半导体器件的图案的方法
CN103268180A (zh) * 2013-05-02 2013-08-28 苏州欧菲光科技有限公司 触摸屏感应组件及其制作方法
CN110189986A (zh) * 2018-02-23 2019-08-30 台湾积体电路制造股份有限公司 半导体装置结构的形成方法

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