WO2021094048A1 - Procédé d'alignement d'un interféromètre et appareil d'exposition par projection pour la technologie des semi-conducteurs - Google Patents

Procédé d'alignement d'un interféromètre et appareil d'exposition par projection pour la technologie des semi-conducteurs Download PDF

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Publication number
WO2021094048A1
WO2021094048A1 PCT/EP2020/078713 EP2020078713W WO2021094048A1 WO 2021094048 A1 WO2021094048 A1 WO 2021094048A1 EP 2020078713 W EP2020078713 W EP 2020078713W WO 2021094048 A1 WO2021094048 A1 WO 2021094048A1
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WO
WIPO (PCT)
Prior art keywords
interferometer
measuring
location
measuring head
measuring beam
Prior art date
Application number
PCT/EP2020/078713
Other languages
German (de)
English (en)
Inventor
Peter Nieland
Torsten STEINBRÜCK
Ulfert Wiesendahl
Robert Schomers
Christoph MANZ
Emanuel Grupp
Original Assignee
Carl Zeiss Smt Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Carl Zeiss Smt Gmbh filed Critical Carl Zeiss Smt Gmbh
Publication of WO2021094048A1 publication Critical patent/WO2021094048A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/02055—Reduction or prevention of errors; Testing; Calibration
    • G01B9/0207—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer
    • G01B9/02072—Error reduction by correction of the measurement signal based on independently determined error sources, e.g. using a reference interferometer by calibration or testing of interferometer
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G01B11/005—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates coordinate measuring machines
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
    • G01B5/004—Measuring arrangements characterised by the use of mechanical techniques for measuring coordinates of points
    • G01B5/008—Measuring arrangements characterised by the use of mechanical techniques for measuring coordinates of points using coordinate measuring machines

Definitions

  • the invention relates to a method for aligning an interferometer and a projection exposure system for semiconductor technology.
  • Projection exposure systems for semiconductor technology have extremely high demands on the imaging accuracy in order to be able to produce the desired microscopic structures as error-free as possible.
  • the optical components used for imaging for the systems described above must be positioned with the greatest precision in order to be able to guarantee adequate imaging quality.
  • the functional principle of the above-mentioned systems is based on generating the finest structures down to the nanometer range by means of a scaled-down image of structures on a mask, with a so-called reticle, on an element to be structured provided with photosensitive material.
  • the minimum dimensions of the structures produced depend directly on the wavelength of the light used.
  • light sources with an emission wavelength in the range of a few nanometers for example between 5 nm and 120 nm, in particular in the range of 13.5 nm, have been used more and more.
  • the wavelength range described is also referred to as the EUV range.
  • the move into the EUV area means doing without refractive optics, which can no longer be used with this wavelength, and the transition to pure mirror systems.
  • the basic structure of the optical elements and their arrangement in the imaging optics have also changed, which has made the structure of a fixed reference, the so-called sensor frame, more difficult.
  • One solution to this problem is to use interferometers as sensors for positioning the optical elements.
  • Interferometers have the advantage that the distance between the measuring head and the reference element, usually a reference mirror, can be very large. This allows the sensor frame to be relatively compact, stiff and simple despite the new arrangement of the optical elements, since the sensor heads no longer have to be arranged in the immediate vicinity of the reference elements, as is the case with most other types of sensors, such as linear scales .
  • the measuring beam of the interferometer which is usually designed as a laser beam, must be aligned with the reference mirror so precisely that the reflected beam is reflected back into the measuring head. In systems such as projection exposure systems, for example, this can lead to a very complex assembly and adjustment process.
  • the optical elements and thus the reference mirrors are not yet mounted when the sensor frame is set up with the measuring heads of the interferometer, an initial adjustment of the measuring heads to the reference mirror is not possible.
  • the reason for this is that the assembly of the optical elements is very complex and the interferometers are not necessarily accessible when the optical elements are also mounted.
  • the object of the present invention is to provide a method and an apparatus which eliminates the disadvantages of the prior art described above.
  • a method for aligning at least one interferometer, wherein a measuring head of the interferometer is arranged on a reference component and wherein the reference component is a component of a projection exposure system for semiconductor lithography, comprises the following method steps:
  • the reference component can be designed as a sensor frame of a projection exposure system and serve as a central reference for the optical elements of a projection optics of the projection exposure system.
  • the interferometers can be arranged on the sensor frame and detect the location and position of the optical elements, which are designed as mirrors, for example.
  • the interferometers comprise a measuring head which is arranged on the reference component and a reference mirror which is arranged on the optical element. The measuring head and the reference mirror must be very precisely aligned with one another.
  • the reference coordinate system of the reference component can be determined with a coordinate measuring machine.
  • the reference component designed as a sensor frame can be fixed on the base body of the coordinate measuring device and the position of the reference point of the sensor frame can be recorded with the coordinate measuring device.
  • the reference point is the origin of a reference coordinate system to which all other positions determined with the coordinate measuring machine are related.
  • the location and the position of the mechanical interface for the measuring head on the reference component can be taken into account.
  • the location and the position of the mechanical interface can be determined with the coordinate measuring machine.
  • the mechanical interface can be touched with a tactile or optical button on the coordinate measuring machine and in this way their position in the reference coordinate system can be determined, with the data being able to be stored, in particular, in a controller or database.
  • the location and direction of the measuring beam emitted by the measuring head of the interferometer can be determined in relation to one or more reference surfaces, for example surfaces on the measuring head that are in mechanical contact with surfaces of the sensor frame after the measuring head is screwed on are to be taken into account.
  • This data can consist of the deviation of the location and the direction with which the measuring beam is emitted from the housing of the measuring head of the interferometer and the deviation of the housing from the target geometry of the housing due to manufacturing tolerances.
  • the location and direction of the measuring beam emitted by the measuring head of the interferometer in relation to the reference surface of the measuring head can also be determined with the coordinate measuring machine, whereby the light beam is detected with an optical sensor or a camera instead of a tactile probe.
  • These data can often be made available by the manufacturers of the interferometers in the form of a data sheet.
  • At least one spacer can be arranged between the reference component and the measuring head of the interferometer.
  • the geometry of the spacer can be determined on the basis of the location and the position of the mechanical interface on the reference component and the location and the direction of the measuring beam of the measuring head of the interferometer in relation to the reference area of the measuring head.
  • the location and the direction of the measuring beam emitted by the measuring head of the interferometer can be determined in the reference coordinate system with an optical sensor.
  • the optical sensor can be designed, for example, as a camera, a four-quadrant diode or as an optical position sensor.
  • the optical sensor can be calibrated in the reference coordinate system of the coordinate measuring device.
  • the tactile button of the coordinate measuring machine used to determine the reference point of the sensor frame and the mechanical interfaces can be replaced by the optical sensor or an additional optical button can be mounted on the coordinate measuring machine. This is calibrated after being connected to the coordinate measuring machine, so that the measuring range of the optical sensor, that is, the area on which the measuring beam is incident, is known in the reference coordinate system.
  • the angle between the optical sensor and the target measuring beam can be set. This has the advantage that, via the known tilting of the optical sensor relative to the measuring beam, this can be taken into account when determining the location and the direction of the measuring beam depending on the location on the optical sensor on which the measuring beam impinges.
  • a measuring surface of the sensor can be set almost perpendicular to the target measuring beam.
  • almost is to be understood as an angle of 90 ° ⁇ 1.25 °. This has the advantage that the tilt can be neglected when determining the location and the direction of the measuring beam.
  • the direction of the measuring beam can thus be determined by at least two measurements at different points along the measuring beam. Using the two points that are absolutely known in the reference coordinate system, the location and direction of the measuring beam can be determined.
  • the location and direction of the measuring beam can be determined by a measurement.
  • the location and direction of the measuring beam can be measured by evaluating the near field and far field of the imaging of the measuring beam.
  • the optical sensor comprises at least two lenses which can be displaced to one another perpendicular to the optical axis.
  • One of the lenses can be coated with a special coating that creates so-called ghost images leads.
  • a partial reflection on the inside of the lens allows the image to be displayed twice, with the near field (without reflection on the lens) and the far field (with reflection on the lens) being displayed in one point when the lenses are centered on one another.
  • a projection exposure system according to the invention for semiconductor lithography comprises an interferometer with an accuracy of the alignment of the beam position on the reference mirror of less than 100 pm, in particular less than 50 pm, in particular less than 20 pm.
  • the distance between the measuring head of the interferometer and the reference mirror can be up to 1000mm, in particular up to 1500mm.
  • a projection exposure system according to the invention for semiconductor lithography comprises an interferometer with an accuracy of the alignment of the beam angle at the reference mirror of the interferometer of less than 500prad, in particular less than 250prad, in particular less than 100prad. Exemplary embodiments and variants of the invention are explained in more detail below with reference to the drawing. Show it
  • Figure 1 shows the basic structure of a projection exposure system in which the invention can be implemented
  • Figure 2 shows the basic structure of a projection optics in which the invention can be realized ver
  • FIG. 3 shows a coordinate measuring machine with which the invention can be implemented
  • FIG. 4 shows a coordinate measuring machine with which the invention can be implemented
  • FIG. 5 shows a flow chart for a method according to the invention.
  • FIG. 1 shows an example of the basic structure of an EUV projection exposure system 1 for microlithography, in which the invention can be used.
  • an illumination system of the projection exposure system 1 has illumination optics 4 for illuminating an object field 5 in an object plane 6.
  • EUV radiation 14 generated by light source 3 as useful optical radiation is aligned by means of a collector integrated in light source 3 in such a way that it passes through an intermediate focus in the area of an intermediate focus plane 15 before it hits a field facet mirror 2.
  • the EUV radiation 14 is reflected by a pupil facet mirror 16.
  • the pupil facet mirror 16 and an optical assembly 17 with mirrors 18, 19 and 20 field facets of the field facet mirror 2 are imaged in the object field 5.
  • a structure is imaged on the reticle 7 on a light-sensitive layer of a wafer 12 which is arranged in the area of the image field 10 in the image plane 11 and which is held by a wafer holder 13, which is also shown in detail.
  • the light source 3 can emit useful radiation preferably in a wavelength range between 5 nm and 120 nm, particularly preferably 13.5 nm.
  • a DUV system is basically constructed like the EUV system 1 described above, whereby mirrors and lenses can be used as optical elements in a DUV system and the light source of a DUV system emits useful radiation in a wavelength range from 100 nm to 300 nm .
  • FIG. 2 shows a basic view of the projection optics 9 of the projection exposure system, in which a plurality of optical elements designed as mirrors 21 .x are arranged. The mirrors 21.x are arranged on a support frame (both not shown) via actuators, for example, and can be moved relative to this.
  • interferometers 22.x each of which includes a measuring head 23.x and a reference mirror 24.x.
  • the measuring heads 23.x are arranged on a sensor frame 26 which is decoupled from the environment via decoupling elements 25.
  • interferometer 22.x only one interferometer 22.x was shown per mirror 21.x, the location and position of the mirror 21 .x being recorded in up to 6 degrees of freedom by interferometer 22.x.
  • the distance between the measuring heads 23.x arranged on the sensor frame 26 and the respective reference mirror 24.x of the interferometer 22.x on the mirror 21.x varies greatly.
  • the measuring heads 23.x of the interferometer 22.x which are arranged on the sensor frame 26, together with the reference mirrors 24.x.
  • a special procedure must therefore be used for the assembly and adjustment of the measuring heads 23.x of the interferometer 22.x on the sensor frame 26.
  • FIG. 3 shows a coordinate measuring device 29 with a stand 31 which is connected to an arm 32 via a swivel joint 35.1.
  • the arm 32 comprises a vertical arm 33 and a pivot arm 34, which are also connected by a Drehschwenkge joint 35.2.
  • the coordinate measuring device 29 is arranged on a base frame 30 and can alternatively also be designed as a portal measuring machine.
  • the sensor frame 26 is also fixed on the base frame 30 and arranged in such a way that the button 37, which is arranged on the swivel arm 34 of the arm 32 via a connection 38 and a further swivel joint 35.3, each mechanical interface 28.x for fastening the measuring heads reach the interferometer can.
  • the mechanical reference point 36 of the sensor frame 26 is measured and a reference coordinate system 27 is determined.
  • the location and the position of the mechanical interfaces 28.x for fastening the measuring heads of the interferometers in the reference coordinate system 27 are determined using the button 37, as shown by dashed lines in the figure for the mechanical interface 28.1.
  • These data are stored together, in particular, in a controller or database (not shown).
  • the control or database is also supplied with the data provided by the manufacturer of the interferometer on the deviation of the geometry of the measuring head from the target geometry and the deviation of the location and direction with which the measuring beam leaves the housing of the measuring head.
  • the geometry of the spacers is then calculated in order to compensate for the deviations caused by manufacturing and assembly tolerances Correct target values.
  • FIG. 4 shows a coordinate measuring device 29 with a camera 39 instead of the tactile button 37 shown in FIG. 3, which in turn is connected to the pivot arm 34 of the arm 32 of the coordinate measuring device 29 via the connection 38 and the joint 35.3.
  • the arm 32 is otherwise identical to the arm 32 described in FIG. 3 and is not described further here.
  • only one measuring head 23.1 of one of the interferometers is shown, which is connected to the mechanical interface 28.1 of the sensor frame 26 with the initial spacer 40.1.
  • the camera 39 is arranged opposite the measuring beam 41.1 emitted by the measuring head 23.1 in such a way that the measuring beam 41.1 strikes a CCD chip arranged in the camera 39 almost perpendicularly, i.e. at an angle of 90 ° ⁇ 1.25 °.
  • the same measurement is then repeated, the distance between the camera 39 to the measuring head 23.1 differs from that of the first measurement.
  • the camera 39 is moved along the emitted measuring beam 41.1 and carries out no or almost no movement perpendicular to the emitted measuring beam 41.1, whereby the angle of the camera 39 is identical for both measurements and therefore when calculating the measuring point by the camera 39 can be neglected or has no influence on the position of the measuring point.
  • the camera 39 is calibrated in such a way that the measuring range of the camera 39 in the reference coordinate system 27 is absolutely known, which means that the measuring point, i.e. the pixel on the CCD chip of the camera 39, which is in the center of the image of the measuring beam on the CCD
  • the point of light shown on the chip is absolutely known.
  • two points of the measuring beam 41 in the reference coordinate system 27 are known, from which the location and direction of the measuring beam 41 in the reference coordinate system 27 can be determined and compared with the target value.
  • the spacers 40.1 are exchanged with adapted spacers 40.2 if necessary.
  • the determination of the location and the direction of the emitted measuring beams 41.x and an adjustment of the spacers 40.x are repeated until all the measuring beams 41.x correspond to the target values within the tolerance.
  • the deviation can also be determined by intersecting the determined measuring beams 41 .x with a target which is arranged at the desired location of the respective reference mirror used later in the system with a desired direction. In this case, the camera can also serve as the target. The deviations must be calculated back to the interferometer.
  • FIG. 5 shows a flow chart of a method for aligning an interferometer 22.x, the measuring head 23.x of the interferometer 22.x being arranged on a reference component 26.
  • a first method step 51 the reference coordinate system 27 of the reference component 26 is determined.
  • a second method step 52 the measuring head 23.x of the interferometer 22.x is mounted.
  • a third method step 53 the location and the direction of the measuring beam 41.x emitted by the measuring head 23.x of the interferometer 22.x are determined in the reference coordinate system 27.
  • a deviation between the specific location and the specific direction of the measuring beam 41.x compared to a target location and a target direction of the measuring beam 41.x is determined.
  • a fifth method step 55 the measuring head 23.x of the interferometer 22.x is aligned on the basis of the deviation determined in the previous step.
  • a sixth method step 56 method steps three to five are repeated until the location and the direction correspond to the target value within the limits of the tolerances.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)

Abstract

L'invention concerne un procédé d'alignement d'au moins une tête de mesure (23.x) d'un interféromètre (22.x), la tête de mesure (23.x) de l'interféromètre (22.x) étant disposée sur un composant de référence (26), le composant de référence (26) étant un composant d'un appareil d'exposition par projection (1) destiné à la lithographie par semi-conducteurs et le procédé comprenant les étapes de procédé suivantes : déterminer le système de coordonnées de référence (27) du composant de référence (26); monter la tête de mesure (23.x) de l'interféromètre (22.x); déterminer, dans le système de coordonnées de référence (27), l'emplacement et la direction du faisceau de mesure (41.x) émis par la tête de mesure (23.x) de l'interféromètre (22.x); déterminer un écart entre l'emplacement mesuré et la direction du faisceau de mesure (41.x) par rapport à un emplacement cible et une direction cible du faisceau de mesure (41.x); aligner la tête de mesure (23.x) de l'interféromètre (22.x) sur la base de l'écart déterminé dans l'étape précédente; et répéter les étapes de procédé trois à cinq jusqu'à ce que l'emplacement et la direction du faisceau de mesure (41.x) correspondent à la valeur cible à l'intérieur de la portée de la tolérance. En outre, l'invention concerne un appareil d'exposition par projection (1) destiné à la lithographie par semi-conducteurs, comprenant un interféromètre (22.x) dont la précision de l'alignement de la position du faisceau au niveau du miroir de référence (24.x) se situe à moins de 100 µm, en particulier à moins de 50 µm, en particulier à moins de 20 µm. En outre, l'invention concerne un appareil d'exposition par projection (1) destiné à la lithographie par semi-conducteurs, comprenant un interféromètre (22.x) dont la précision de l'alignement de l'angle de faisceau au niveau du miroir de référence (24.x) de l'interféromètre (22.x) se situe à moins de 500 µrad, en particulier à moins de 250 µrad, en particulier à moins de 100 µrad.
PCT/EP2020/078713 2019-11-15 2020-10-13 Procédé d'alignement d'un interféromètre et appareil d'exposition par projection pour la technologie des semi-conducteurs WO2021094048A1 (fr)

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DE102019217629.1A DE102019217629B4 (de) 2019-11-15 2019-11-15 Verfahren zur Ausrichtung eines Interferometers
DE102019217629.1 2019-11-15

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023180241A1 (fr) * 2022-03-24 2023-09-28 Carl Zeiss Smt Gmbh Agencement et système d'exposition par projection

Citations (3)

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Publication number Priority date Publication date Assignee Title
EP2390737A2 (fr) * 2010-05-28 2011-11-30 Dörries Scharmann Technologie GmbH Procédé de mesurage de machines
DE102015211286A1 (de) * 2015-06-18 2016-12-22 Carl Zeiss Smt Gmbh Abbildungssystem und verfahren
DE102018200524A1 (de) * 2018-01-15 2019-07-18 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit verbesserter Komponentenjustage und Justageverfahren

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Publication number Priority date Publication date Assignee Title
DE102018114478B4 (de) * 2018-06-15 2024-09-19 Polytec Gmbh Verfahren zur Bestimmung des Strahlverlaufs eines Messstrahls einer interferometrischen Messvorrichtung und Messvorrichtung zur interferometrischen Vermessung eines Messobjekts
DE102019215369A1 (de) * 2019-10-08 2019-11-28 Carl Zeiss Smt Gmbh Messanordnung zur Ermittlung der Position und/oder der Orientierung eines optischen Elements sowie Projektionsbelichtungsanlage

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2390737A2 (fr) * 2010-05-28 2011-11-30 Dörries Scharmann Technologie GmbH Procédé de mesurage de machines
DE102015211286A1 (de) * 2015-06-18 2016-12-22 Carl Zeiss Smt Gmbh Abbildungssystem und verfahren
DE102018200524A1 (de) * 2018-01-15 2019-07-18 Carl Zeiss Smt Gmbh Projektionsbelichtungsanlage für die Halbleiterlithographie mit verbesserter Komponentenjustage und Justageverfahren

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023180241A1 (fr) * 2022-03-24 2023-09-28 Carl Zeiss Smt Gmbh Agencement et système d'exposition par projection

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