WO2021088369A1 - 一种光伏电池及其制备方法 - Google Patents

一种光伏电池及其制备方法 Download PDF

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WO2021088369A1
WO2021088369A1 PCT/CN2020/095746 CN2020095746W WO2021088369A1 WO 2021088369 A1 WO2021088369 A1 WO 2021088369A1 CN 2020095746 W CN2020095746 W CN 2020095746W WO 2021088369 A1 WO2021088369 A1 WO 2021088369A1
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diffuse reflection
layer
front metal
photovoltaic cell
metal grid
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PCT/CN2020/095746
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English (en)
French (fr)
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朱琛
袁陨来
王建波
吕俊
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泰州隆基乐叶光伏科技有限公司
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Priority to EP20885230.1A priority Critical patent/EP4044258A4/en
Priority to US17/773,608 priority patent/US20220384665A1/en
Publication of WO2021088369A1 publication Critical patent/WO2021088369A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of solar cells, in particular to a photovoltaic cell and a preparation method thereof.
  • the front metal grid line is a conductive metal wire arranged on the light-emitting surface of the photovoltaic cell
  • the back metal grid line is a conductive metal wire arranged on the backlight surface of the photovoltaic cell.
  • the front metal grid lines shading the light-emitting surface of the photovoltaic cell, and occupy up to 40% of the shading area, which reduces the light absorption efficiency of the photovoltaic cell.
  • the commonly used front metal grid lines are made of metallic silver material, but the surface of metallic silver material is relatively smooth, and the ability of diffuse reflection of light is not strong. The scattering coefficient of incident light is only 0.15-0.2, therefore, the incident light The light from the front metal grid line cannot be absorbed by the photovoltaic cell again, which reduces the light absorption efficiency of the photovoltaic cell.
  • the invention provides a photovoltaic cell to solve the problem of low light absorption efficiency existing in the existing photovoltaic cell.
  • One aspect of the present invention provides a photovoltaic cell, including:
  • An emitter layer, the emitter layer is arranged on the first surface of the base layer;
  • a plurality of front metal gate lines, and a plurality of the front metal gate lines are arranged in parallel on the side of the emitter layer away from the base layer;
  • the metal powder includes one or more of silver powder, aluminum powder, nickel powder and titanium dioxide.
  • FIG. 2 schematically shows a structural schematic diagram of the morphology of a diffuse reflection layer provided by an embodiment of the present invention
  • An emitter layer 20, the emitter layer 20 is disposed on the first surface of the base layer 10;
  • the scattering coefficient of the diffuse emission layer 40 facing away from the front metal grid line 30 is greater than 0.6.
  • the diffuse reflection layer 40 will not block the light incident to the emitter layer 20.
  • the diffuse reflection layer is arranged on the front metal grid line, which improves the diffuse reflection of the light directed to the front metal grid line, so that more light is directed to the emitter layer of the photovoltaic cell, and the light absorption rate is improved.
  • the diffuse reflection layer is only arranged on the front metal grid line, and does not block the light directed to the emitter layer.
  • the emitter layer after preparing the emitter layer, it further includes back-etching the second surface of the base layer, and then preparing a back field layer on the second surface of the base layer, on the emitter layer and the back field layer. Prepare a passivation layer on top.
  • the material of the front metal grid lines is silver, and the front metal grid lines are prepared by screen printing, wherein a plurality of front metal grid lines are arranged side by side and spaced apart.
  • the opening width of the screen is smaller than the width of the front metal grid line.
  • the mesh number of the screen is 300-400 mesh; the thickness of the screen is 15 ⁇ m-20 ⁇ m; the width of the opening of the screen is 15 ⁇ m-25 ⁇ m.
  • the specifications of the screen for preparing the diffuse reflection layer can be adjusted according to actual needs.
  • the conventional group is the photovoltaic parameters of the existing photovoltaic cell without the diffuse reflection layer
  • the experimental group is the photovoltaic parameter of the photovoltaic cell with the diffuse reflection layer provided in the embodiment of the present invention. It can be seen that after adding the diffuse reflection layer, the short-circuit current temperature coefficient of the photovoltaic cell is significantly higher than that of the conventional group. After a lot of tests, the short-circuit current temperature coefficient of the photovoltaic cell provided by the embodiment of the present invention is improved by more than 2% compared with the photovoltaic cell of the prior art, which enhances the performance of the photovoltaic cell.
  • An embodiment of the present invention provides a method for preparing a photovoltaic cell, including: providing a base layer and cleaning the base layer; forming an emitter layer on the first surface of the base layer; On one side of the base layer, a plurality of front metal grid lines are formed side by side; a screen is placed on the side of each of the front metal grid lines away from the emitter layer, and the colloidal material of the diffuse reflection layer is printed by screen printing; The diffuse reflection colloidal material is irradiated with ultraviolet light to cure the diffuse reflection colloidal material to obtain a plurality of diffuse reflection layers; the diffuse reflection layer corresponds to the front metal grid line one-to-one.
  • the photovoltaic cell prepared by the embodiment of the present invention is provided with a diffuse reflection layer on the front metal grid line, which improves the diffuse reflection of the light directed to the front metal grid line, so that more light is directed to the emitter layer of the photovoltaic cell, and the light is improved.
  • the diffuse reflection layer is only arranged on the front metal grid line, and does not block the light directed to the emitter layer.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明实施例提供的一种光伏电池及光伏电池的制备方法，该光伏电池包括：基底层；发射极层，所述发射极层设置在所述基底层的第一面；多根正面金属栅线，多根所述正面金属栅线并列设置在所述发射极层背离所述基底层的一面；漫反射层，多个所述漫反射层分别设置在各根所述正面金属栅线背离所述发射极层的一面，所述漫反射层与所述正面金属栅线一一对应。本发明实施例通过在正面金属栅线上设置漫反射层，提高了射向正面金属栅线的光线的漫反射，使光线更多的射向光伏电池的发射极层，提高光线的吸收率，此外，漫反射层只设置在正面金属栅线上，并不遮挡射向发射极层的光线。

Description

一种光伏电池及其制备方法
本申请要求在2019年11月5日提交中国专利局、申请号为201911072931.1、发明名称为“一种光伏电池及其制备方法”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本发明涉及太阳能电池技术领域，尤其涉及一种光伏电池及其制备方法。
背景技术
为了获得尽可能高的光电转化效率，需要在光伏电池上制备正面金属栅线和背面金属栅线，来将光伏电池内的电流引到电池的外部。其中，正面金属栅线是设置在光伏电池采光面的导电金属线，背面金属栅线是设置在光伏电池背光面的导电金属线。
目前，正面金属栅线对光伏电池的采光面产生了遮光，并且占有遮光面积高达40％，这降低了光伏电池的吸光效率。另一方面，现有常用的正面金属栅线为金属银材料，但是金属银材料的表面比较光滑，对光线的漫反射能力不强，入射光的散射系数仅0.15-0.2，因此，导致入射至正面金属栅线的光线无法被光伏电池再次吸收，降低了光伏电池的吸光效率。
发明内容
本发明提供一种光伏电池，以解决现有光伏电池存在的吸光效率低的问题。
本发明一方面提供了一种光伏电池，包括：
基底层；
发射极层，所述发射极层设置在所述基底层的第一面；
多根正面金属栅线，多根所述正面金属栅线并列设置在所述发射极层背离所述基底层的一面；
漫反射层，多个所述漫反射层分别设置在各根所述正面金属栅线背离所述发射极层的一面，所述漫反射层与所述正面金属栅线一一对应。
可选地，所述漫反射层背离所述正面金属栅线的一面具有凸起和凹陷。
可选地，所述漫反射层的材料为光敏胶与金属粉的混合物。
可选地，所述金属粉包括：银粉、铝粉、镍粉和钛白粉中的一种或多种。
可选地，所述漫反射层中各所述金属粉的质量百分比包括：银粉为13％-15％、铝粉为13％-25％、镍粉为4％-20％、钛白粉为9％-12％。
可选地，所述漫反射层覆盖所述正面金属栅线的宽度不大于所述正面金属栅线的宽度。
本发明实施例另一方面在于提供一种光伏电池的制备方法，所述方法包括：
提供基底层，并对所述基底层进行清洗；
在所述基底层的第一面形成发射极层；
在所述发射极层背离所述基底层的一面，并列形成多根正面金属栅线；
在各根所述正面金属栅线背离所述发射极层的一面放置网版，通过丝网印刷的方式印刷漫反射层胶体材料；
采用紫外光对所述漫反射胶体材料进行照射，使所述漫反射胶体材料固化，得到多个漫反射层；所述漫反射层与所述正面金属栅线一一对应。
可选地，所述网版的开口宽度小于所述正面金属栅线的宽度。
可选地，所述网版的目数为300目-400目；所述网版厚度为15μm-20μm；所述网版的开口宽度为15μm-25μm。
可选地，所述紫外光的照射时间为5分钟-10分钟。
本发明实施例提供的一种光伏电池，包括：基底层；发射极层，所述发射极层设置在所述基底层的第一面；多根正面金属栅线，多根所述正面金属栅线并列设置在所述发射极层背离所述基底层的一面；漫反射层，多个所述漫反射层分别设置在各根所述正面金属栅线背离所述发射极层的一面，所述漫反射层与所述正面金属栅线一一对应。本发明实施例通过在正面金属栅线上设置漫反射层，提高了射向正面金属栅线的光线的漫反射，使光线更多的 射向光伏电池的发射极层，提高光线的吸收率，此外，漫反射层只设置在正面金属栅线上，并不遮挡射向发射极层的光线。
上述说明仅是本发明技术方案的概述，为了能够更清楚了解本发明的技术手段，而可依照说明书的内容予以实施，并且为了让本发明的上述和其它目的、特征和优点能够更明显易懂，以下特举本发明的具体实施方式。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对本发明实施例的描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1示意性地示出了本发明实施例提供的一种光伏电池的结构示意图；
图2示意性地示出了本发明实施例提供的一种漫反射层形貌的结构示意图；
图3示意性地示出了本发明实施例提供的一种光伏电池的制备方法的步骤流程图。
具体实施例
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
参照图1，示出了一种光伏电池，该一种光伏电池包括：
基底层10；
发射极层20，所述发射极层20设置在所述基底层10的第一面；
多根正面金属栅线30，多根所述正面金属栅线30并列设置在所述发射极层20背离所述基底层10的一面；
漫反射层40，多个所述漫反射层40分别设置在各根所述正面金属栅线 30背离所述发射极层的一面，所述漫反射层40与所述正面金属栅线30一一对应。
在本发明实施例中，还包括背场层50和背面金属栅线60，所述背场层50设置在所述基底层10与所述第一面相背的第二面，所述背面金属栅线60设置在所述背场层远离所述基底层10的一面。其中，多根背面金属栅线也并列间隔设置。
在本发明实施例中，基底层10的材料为硅材料。
在本发明实施例中，正面金属栅线30是指设置在光伏电池采光面的金属导线，背面金属栅线60是指设置在光伏电池背光面的金属导线。
在本发明实施例中，参照图2，为图1中区域X的放大图，所述漫反射层40背离所述正面金属栅线30的一面具有多个凸起和凹陷，而非光滑的平面。这些凸起和凹陷可以是微结构。换言之，所述漫反射层40背离所述正面金属栅线30的一面凹凸不平。
再换言之，漫反射层40背离所述正面金属栅线30的一面凹凸不平可以为，该面为绒面，即粗糙面，粗糙面作为本领域常用术语，是相对于光滑面而言的，粗糙面的粗糙度大于光滑面的粗糙度。本发明并不限制粗糙度的具体数值。粗糙面可以增加漫反射层对光线的漫反射，提高光伏电池的吸光率。
在本发明实施例中，图1的光伏电池还包括封装盖板，通常封装盖板包围图1所示的光伏电池，并且封装盖板包括玻璃材料，当光线在漫反射层40发生漫反射后，光线射向封装盖板，经封装盖板的反射，光线射向发射极层20，使光线被光伏电池吸收，提高光伏电池的吸光率。
在本发明实施例中，所述漫反射层40的材料为光敏胶与金属粉的混合物。
在本发明实施例中，光敏胶(UV胶)又称无影胶或紫外光固化胶，无影胶是一种通过紫外线光照射才能固化的一类胶粘剂，它可以作为粘接剂使用，无影胶固化原理是UV固化材料中的光引发剂(或光敏剂)在紫外线的照射下吸收紫外光后产生活性自由基或阳离子，引发单体聚合、交联化学反应，使粘合剂在数秒钟内由液态转化为固态。
其中，光敏胶是绝缘材料，因此将光敏胶与金属粉混合后的漫反射层也 为绝缘材料，因此不会影响正面金属栅线的导电性。
在本发明实施例中，所述金属粉包括：银粉、铝粉、镍粉和钛白粉中的一种或多种。
在本发明实施例中，金属粉为微米级颗粒，即金属粉的粒径范围为1μm-100μm。
在本发明实施例中，将金属粉混合均匀有与光敏胶进行混合，得到制备漫反射层的材料。
在本发明实施例中，所述漫反射层40中各所述金属粉的质量百分比包括：银粉为13％-15％、铝粉为13％-25％、镍粉为4％-20％、钛白粉为9％-12％。
在本发明实施例中，可根据实际需要调节各金属粉在漫反射层中的质量比例，在此不加以限定。
在本发明实施例中，所述漫反射层40为绝缘材料。
在本发明实施例中，所述漫反射层40与所述正面金属栅线30互不反应。
在本发明实施例中，所述漫发射层40背离所述正面金属栅线30的一面的散射系数大于0.6。
在本发明实施例中，要求漫反射层与正面金属栅线不发生反应，当正面金属栅线为银时，漫反射层和银不发生反应，同时要求漫反射层为绝缘材料，以不会改变正面金属栅线的线电阻，对正面金属栅线的导电能力没有任何影响。
在本发明实施例中，参照图2.漫反射层的厚度H为5μm-15μm。
在本发明实施例中，参照图2，所述漫反射层40覆盖所述正面金属栅线30的宽度W1不大于所述正面金属栅线30的宽度W2。
参照图2，在本发明实施例中，漫反射层两侧边缘区域的厚度小于中间区域的厚度，并且从边缘区域到中间区域厚度逐渐增大。
其中，当正面金属栅线30的宽度W1不大于所述正面金属栅线30的宽度W2时，漫反射层40不会遮挡光线向发射极层20入射。
本发明实施例提供的一种光伏电池，包括：基底层；发射极层，所述发射极层设置在所述基底层的第一面；多根正面金属栅线，多根所述正面金属 栅线并列设置在所述发射极层背离所述基底层的一面；漫反射层，多个所述漫反射层分别设置在各根所述正面金属栅线背离所述发射极层的一面，所述漫反射层与所述正面金属栅线一一对应。本发明实施例通过在正面金属栅线上设置漫反射层，提高了射向正面金属栅线的光线的漫反射，使光线更多的射向光伏电池的发射极层，提高光线的吸收率，此外，漫反射层只设置在正面金属栅线上，并不遮挡射向发射极层的光线。
实施例二
参照图3，示出了本发明实施例的一种光伏电池的制备方法的步骤流程图，所述方法包括：
步骤201，提供基底层，并对所述基底层进行清洗。
在本发明实施例中，基底层10的材料为硅材料，对硅基底进行清洗，清洗包括超声清洗，去离子水清洗。
步骤202，在所述基底层的第一面形成发射极层。
在本发明实施例中，采用扩散的方式在基底层的第一面形成发射极层。
在本发明实施例中，在制备发射极层后，还包括对基底层的第二面进行背面刻蚀，然后在基底层的第二面制备背场层，在发射极层上和背场层上制备钝化层。
步骤203，在所述发射极层背离所述基底层的一面，并列形成多根正面金属栅线。
在本发明实施例中，正面金属栅线的材料为银，通过丝网印刷的方式制备正面金属栅线，其中，多根正面金属栅线并列间隔设置。
其中，在步骤203之后，采用和制备正面金属栅线同样的方法制备背面金属栅线。
步骤204，在各根所述正面金属栅线背离所述发射极层的一面放置网版，通过丝网印刷的方式印刷漫反射层胶体材料。
在本发明实施例中，在步骤204之前，先制备漫反射层胶体材料；所述制备漫反射胶体材料包括：将微米级的银粉、铝粉、镍粉为和钛白粉按照预设比例进行混合，然后和光敏胶进行混合搅拌均匀后，得到漫反射层胶体材 料。
在本发明实施例中，所述网版的开口宽度小于所述正面金属栅线的宽度。
其中，网版的开口宽度小于正面金属栅线的宽度，可以使在丝网印刷时，漫反射层胶体材料不会像正面金属栅线的两侧遗漏，避免漫反射层胶体材料漏入各正面金属栅线之间，造成对入射至发射极层的光线的遮挡。
在本发明实施例中，所述网版的目数为300目-400目；所述网版厚度为15μm-20μm；所述网版的开口宽度为15μm-25μm。
在本发明实施例中，制备漫反射层的网版的规格可根据实际需要进行调节。
步骤205，采用紫外光对所述漫反射胶体材料进行照射，使所述漫反射胶体材料固化，得到多个漫反射层；所述漫反射层与所述正面金属栅线一一对应。
在本发明实施例中，所述紫外光的照射时间为5分钟-10分钟。
在本发明实施例中，通常丝网印刷漫反射层胶体材料后，漫反射层胶体材料的表面使平滑的，但是在紫外光线的照射下，漫反射层胶体材料的表面发生不同程度的收缩，使漫反射层胶体材料的表面形成粗糙的凹凸不平面，粗糙面能够增加漫反射层的漫反射。
表一
Figure PCTCN2020095746-appb-000001
在本发明实施例中，参照表一为不同组光伏电池的测试参数。其中，常规组为不增加漫反射层的现有的光伏电池的光伏参数，实验组为本发明实施例提供的增加漫反射层后的光伏电池的光伏参数。可见，在增加漫反射层后，光伏电池的短路电流温度系数明显高于常规组。经过大量的测试，本发明实施例提供的光伏电池的短路电流温度系数比起现有技术的光伏电池有大于 2％的提升、增强了光伏电池的性能。
本发明实施例提供的一种光伏电池的制备方法，包括：提供基底层，并对所述基底层进行清洗；在所述基底层的第一面形成发射极层；在所述发射极层背离所述基底层的一面，并列形成多根正面金属栅线；在各根所述正面金属栅线背离所述发射极层的一面放置网版，通过丝网印刷的方式印刷漫反射层胶体材料；采用紫外光对所述漫反射胶体材料进行照射，使所述漫反射胶体材料固化，得到多个漫反射层；所述漫反射层与所述正面金属栅线一一对应。通过本发明实施例制备的光伏电池在正面金属栅线上设置漫反射层，提高了射向正面金属栅线的光线的漫反射，使光线更多的射向光伏电池的发射极层，提高光线的吸收率，此外，漫反射层只设置在正面金属栅线上，并不遮挡射向发射极层的光线。
所属领域的技术人员可以清楚地了解到，为描述的方便和简洁，上述描述的系统、装置和单元的具体工作过程，可以参考前述方法实施例中的对应过程，在此不再赘述。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以权利要求的保护范围为准。

Claims (10)

  1. 一种光伏电池，其特征在于，包括：
    基底层；
    发射极层，所述发射极层设置在所述基底层的第一面；
    多根正面金属栅线，多根所述正面金属栅线并列设置在所述发射极层背离所述基底层的一面；
    多个漫反射层，所述多个漫反射层分别设置在各根所述正面金属栅线背离所述发射极层的一面，所述漫反射层与所述正面金属栅线一一对应。
  2. 根据权利要求1所述的光伏电池，其特征在于，所述漫反射层背离所述正面金属栅线的一面具有凸起和凹陷。
  3. 根据权利要求1所述的光伏电池，其特征在于，所述漫反射层的材料为光敏胶与金属粉的混合物。
  4. 根据权利要求3所述的光伏电池，其特征在于，所述金属粉包括：银粉、铝粉、镍粉和钛白粉中的一种或多种。
  5. 根据权利要求3所述的光伏电池，其特征在于，所述漫反射层中各所述金属粉的质量百分比包括：银粉为13％-15％、铝粉为13％-25％、镍粉为4％-20％、钛白粉为9％-12％。
  6. 根据权利要求1-5任意一项所述的光伏电池，其特征在于，所述漫反射层覆盖所述正面金属栅线的宽度不大于所述正面金属栅线的宽度。
  7. 一种光伏电池的制备方法，其特征在于，所述方法包括：
    提供基底层，并对所述基底层进行清洗；
    在所述基底层的第一面形成发射极层；
    在所述发射极层背离所述基底层的一面，并列形成多根正面金属栅线；
    在各根所述正面金属栅线背离所述发射极层的一面放置网版，通过丝网印刷的方式印刷漫反射层胶体材料；
    采用紫外光对所述漫反射胶体材料进行照射，使所述漫反射胶体材料固化，得到多个漫反射层；所述漫反射层与所述正面金属栅线一一对应。
  8. 根据权利要求7所述的制备方法，其特征在于，所述网版的开口宽度小于所述正面金属栅线的宽度。
  9. 根据权利要求7所述的制备方法，其特征在于，所述网版的目数为300目-400目；所述网版厚度为15μm-20μm；所述网版的开口宽度为15μm-25μm。
  10. 根据权利要求7所述的制备方法，其特征在于，所述紫外光的照射时间为5分钟-10分钟。
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