WO2021051468A1 - 一种激光器 - Google Patents

一种激光器 Download PDF

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Publication number
WO2021051468A1
WO2021051468A1 PCT/CN2019/112279 CN2019112279W WO2021051468A1 WO 2021051468 A1 WO2021051468 A1 WO 2021051468A1 CN 2019112279 W CN2019112279 W CN 2019112279W WO 2021051468 A1 WO2021051468 A1 WO 2021051468A1
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WIPO (PCT)
Prior art keywords
optical
mirror
light
beam combiner
reflecting
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PCT/CN2019/112279
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English (en)
French (fr)
Inventor
周少丰
刘鹏
李日豪
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深圳市星汉激光科技股份有限公司
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Publication of WO2021051468A1 publication Critical patent/WO2021051468A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H01S5/0071—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping for beam steering, e.g. using a mirror outside the cavity to change the beam direction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Definitions

  • the embodiments of the present invention relate to the technical field of optical fibers, and in particular to a laser.
  • the main technical problem solved by the embodiments of the present invention is to provide a laser that can increase the power of the laser.
  • a technical solution adopted by the present invention is to provide a laser, which is characterized by comprising: a substrate, provided with a first step portion and a second step portion, the first step portion is provided with a plurality of A first step, the second step part is provided with a plurality of second steps; a plurality of first optical cores, one of the first optical cores is provided on one of the first steps; a plurality of first reflecting mirrors, one The first reflecting mirror is arranged on a first step, and the first reflecting mirror is used to receive and reflect the light beam output by the first optical core on the same first step.
  • Optical core a said second optical core is arranged on a said second step;
  • a plurality of second reflecting mirrors one of the second reflecting mirrors is arranged on the second step, and the second reflecting mirror is used to receive and reflect the second optical core located on the same second step as the second reflecting mirror.
  • the output light beam; a beam combiner, which is provided on the substrate and located between the first stepped portion and the second stepped portion, the beam combiner for the third mirror and the plurality of first stepped portions The beams output by a mirror are combined.
  • the laser further includes an optical fiber, one end of the optical fiber is fixed on the substrate, and the end of one end of the optical fiber corresponds to the beam combiner, and is used to receive the output from the beam combiner. beam.
  • the laser further includes a plurality of first collimating units
  • a first collimating unit is disposed on a first step, and the first collimating unit is used to collimate the light output from the first optical core in the same first step after the input is in The first mirror of the same first step.
  • the first collimating unit includes a first fast-axis collimating lens and a first slow-axis collimating lens; the first fast-axis collimating lens is disposed close to the first optical core, and the first The slow axis collimating lens is arranged close to the first reflecting mirror.
  • the laser further includes a plurality of second collimating units; one of the second collimating units is disposed on a second step, and one of the second collimating units is used for collimating on the same second step
  • the light output by the second optical core is collimated and then input to the second mirror at the same second step.
  • the second collimating unit includes a second fast-axis collimating lens and a second slow-axis collimating lens; the second fast-axis collimating lens is disposed close to the second optical core, and the second The slow axis collimating lens is arranged close to the second mirror.
  • the laser further includes a focusing lens; the focusing lens is arranged on the substrate, and the focusing lens is located between the beam combiner and the optical fiber, and the focusing lens is used for the output of the beam combiner After the beam is focused, it enters the optical fiber.
  • the focusing lens and the first stepped portion are located on one side of the beam combiner, and the second stepped portion is located on the other side of the beam combiner.
  • the heights of the first stepped portion and the second stepped portion are the same.
  • the first optical core and the second optical core are both semiconductor laser chips.
  • the multiple first optical cores are located on the multiple first steps of the first step portion, and the second optical cores are located on the multiple second steps of the second step portion.
  • the light emitted by the multiple first optical cores on the multiple first steps on the first stepped portion passes through the first and second reflective mirrors, and the light reflected by the second reflective mirror on the second stepped portion is composed of multiple
  • the light emitted by the multiple second optical cores on the second step is combined at the beam combiner to obtain a larger number of beams. Due to the symmetrical stepwise arrangement of the chips, the number of chips is increased to increase the overall power of the laser. In this way, the laser has more power under the premise that the volume of the laser does not change much.
  • Figure 1 is a top view of an embodiment of the laser of the present invention
  • Figure 2 is a front view of the laser implementation of the present invention
  • Fig. 3 is a schematic diagram of light comparison of the laser embodiment of the present invention.
  • a laser 1 includes a substrate 10, a plurality of first optical cores 20, a plurality of second optical cores 30, a plurality of first reflecting mirrors 40, a plurality of second reflecting mirrors 50, a first Three mirrors 60 and beam combiner 70.
  • the light beams output by the plurality of first optical cores 20 reach the third reflecting mirror 60 after being reflected by the plurality of first reflecting mirrors 40, and then enter the beam combiner 70 after being reflected by the third reflecting mirror 60, and the plurality of second optical cores 30
  • the output light beams are reflected by a plurality of second mirrors 50 and enter the beam combiner 70, and the beam combiner 70 performs beam combining.
  • the substrate 10 is provided with a first step portion 101 and a second step portion 102
  • the first step portion 101 is provided with a plurality of first steps 1011
  • a plurality of first steps 1011 protrudes from the substrate 10, and is arranged one by one.
  • the second step portion 102 is provided with a plurality of second steps 1021, and the plurality of second steps 1021 protrude from the substrate 10 and are sequentially arranged step by step.
  • the multiple first optical cores 20 are respectively disposed on the multiple first steps 1011, and one first optical core 20 is located on one first step 1011.
  • the first optical core 20 may be a semiconductor laser chip, and the light generated by the semiconductor laser chip has higher energy and relatively higher light quality.
  • the plurality of first reflecting mirrors 40 are arranged on the first step 1011, one first step 1011 is provided with a first reflecting mirror 40, and the plurality of first reflecting mirrors 40 are
  • the optical core 20 corresponds to the plurality of first reflecting mirrors 40 one-to-one.
  • the light beam output by a first optical core 20 is reflected by the corresponding first reflector 40 to reach the third reflector 60, and then reflected by the third reflector into the combined beam. Since the first optical core 20 is arranged in steps, Therefore, the plurality of first optical cores 20 are superimposed to form a combined beam.
  • the multiple second optical cores 30 are disposed on the second step 1021, and one second optical core 30 is located on one second step 1021.
  • the second optical core 30 may be a semiconductor laser chip, and the light generated by the semiconductor laser chip has higher energy and relatively higher light quality.
  • the plurality of second reflecting mirrors 50 are arranged on the second step 1021, and the plurality of second optical cores 30 are the same as the plurality of second reflecting mirrors 50.
  • One correspondence The light beam output by one second optical core 30 is reflected by the corresponding second reflector 50. Since the second optical core 30 is arranged in steps, a plurality of second optical cores 30 are superimposed to form a combined beam.
  • the third mirror 60 and the beam combiner 70 are both disposed on the substrate 10, and the third mirror 60 is also located at the first step part 101 and the second step part 101 and the second step part 101. Between the steps 102.
  • light is emitted from the plurality of first optical cores 20 and the plurality of second optical cores 30 and then passes through the plurality of first reflecting mirrors 40 and the plurality of second reflecting mirrors 50 corresponding thereto, then The light reflected by the first reflector 40 is reflected by the third reflector 60 and then the light reflected by the second reflector 50 reaches the beam combiner 70 for light combining processing
  • the first chip 20 and the second chip 30 are respectively arranged on the first step part 101 and the second step part 102, and then pass through the first mirror 50 and the second
  • the reflector 60 reflects, and the third reflector 60 reflects the light reflected from the first reflector 40.
  • the beam is combined by the beam combiner 70, which reduces the overall laser power with the same number of optical cores. height.
  • the vertical dimension h2 of the light is only half of the vertical dimension h1 of the single-row structure, thereby reducing the NA value of the light and improving the quality of the light.
  • the heights of the first step portion 101 and the second step portion 102 are the same.
  • the heights of the multiple first steps 1011 of the first step portion 101 and the multiple second steps 1021 of the second step portion correspond one-to-one.
  • the light emitted by the first optical core 20 on the upper side corresponds to the height corresponding to the light emitted by the second optical core 30 on the multiple second steps 1021 located on the second step portion 102, and the light emitted by the second optical core 30 can be in one-to-one correspondence. After the beams are combined by the combiner 70, a beam with greater optical power will be obtained.
  • the beam combiner 70 further includes a half-wave plate 701, and the half-wave plate 701 is disposed at one end of the beam combiner 70 near the third mirror 60.
  • the half-wave plate 701 performs polarization screening on the light beam reflected by the third mirror 60, thereby changing the polarization direction of the light beam.
  • the light beam emitted from the first optical core 20 reaches the beam combiner 70 after passing through the first reflector 40 and the third reflector 60 and the half-wave plate 701.
  • the light beam emitted by the second optical core 30 reaches the beam combiner after passing through the second reflector 50. So far, the light beams emitted by the first optical core 20 and the second optical core 30 respectively reach the beam combiner.
  • the beam combiner 70 performs beam combining processing. Due to the polarization processing of the light beam by the half-wave plate 701, the quality of the light beam after being combined by the beam combiner 70 is better.
  • the laser 1 further includes an optical fiber 80, one end of the optical fiber 80 is fixed on the substrate 10, and the end of one end of the optical fiber 80 corresponds to the beam combiner 70, the The optical fiber 80 is used to receive the light beam from the beam combiner 70.
  • the laser 1 further includes a plurality of first collimating units 201, and the plurality of first collimating units 201 are respectively disposed on each step of the first step 1011 and located on the step.
  • the first optical core 20 corresponds to.
  • the light output by the first optical core 20 becomes parallel light after passing through the first collimating unit 201, and then enters the beam combiner 70 after being reflected by the first reflector 40.
  • 20 and the second optical core 30 are arranged side by side, whereby the light beam emitted from the first optical core 20 enters the beam combiner 70 after passing through the first mirror 40 and the third mirror The height is reduced, thereby reducing the NA value of the beam and improving the quality of the beam.
  • the first collimating unit 201 further includes a first fast-axis collimating lens 2011 and a first slow-axis collimating lens 2012.
  • the first fast axis collimating lens 2011 is arranged on the side close to the first optical core 20, and the first slow axis collimating lens 2012 is arranged on the side close to the second mirror 40.
  • the light After the light is emitted from the first optical core 20, it passes through the first fast-axis collimating lens 2011 for preliminary collimation, so that as much light as possible reaches the first slow-axis collimating lens 2012, and the first The slow-axis collimating lens 2012 collimates the light rays into mutually parallel light, so that more parallel light exits from the first slow-axis collimating lens 2012, so that it can pass through the first mirror 40 and the second After the three mirrors 60 are combined by the beam combiner 70, the beam quality is higher.
  • the laser 1 further includes a plurality of second collimating units 202, and the plurality of second collimating units 202 are respectively disposed on each step of the second step 1021 and are located on each step of the step 1021.
  • the second optical core 30 corresponds to.
  • the light output by the second optical core 30 becomes parallel light after passing through the second collimating unit 202, and passes through the second mirror 50 and the beam combiner 70, due to the first optical core 20 and the second optical core 30 are arranged side by side, so that the light beam emitted from the second optical core enters the beam combiner 70 via the second mirror 40 is reduced in height, thereby reducing the NA value of the light beam , Improve the quality of the beam.
  • the second collimating unit 202 includes a second fast axis collimating lens 2021 and a second slow axis collimating lens 2022.
  • the second fast axis collimating lens 2021 is disposed close to the second optical core 30.
  • the second slow axis collimating lens 2022 is arranged on the side close to the second mirror 50.
  • the second optical core 30 When light is emitted from the second optical core 30, it passes through the second fast-axis collimating lens 2021 for preliminary collimation, so that as much light as possible reaches the second slow-axis collimating lens 2022, and the second The slow-axis collimating lens 2022 collimates the light rays into mutually parallel light, thereby making the parallel light coming out of the second slow-axis collimating lens 2022 more, so that it can pass through the second mirror 50 and the second mirror. After the three mirrors 60 are combined by the beam combiner 70, the beam quality is higher.
  • the laser 1 further includes a focusing lens 90, the focusing lens 90 is disposed on the substrate 10, and the focusing lens 90 is located between the beam combiner and the optical fiber 80.
  • the focusing lens 90 focuses the light beam from the beam combiner 70 into the optical fiber 80.
  • the focusing lens 90 is located on one side of the first step portion 101, and both the focusing lens 90 and the first step portion 101 are located on the same side of the beam combiner 70.
  • the laser further includes a first heat sink (not shown), a second heat sink (not shown), a first heat sink (not shown), and a second heat sink (not shown).
  • the first heat dissipating assembly includes a first heat dissipating fin arranged on a side wall of the first stepped part and a plurality of first heat conducting parts extending from the first heat dissipating fin, a first heat conducting part extends to a first step, A first chip is arranged on a first heat conducting part. When the first chip is working, the heat of the first chip is transferred to the first heat sink through the first heat-conducting part, and the first heat sink performs heat dissipation.
  • the first heat sink is arranged to be attached to the side wall of the first stepped portion, and the shape and size of the first heat sink match with the side wall of the first stepped portion.
  • the second heat dissipation assembly includes a second heat dissipation fin arranged on the side wall of the second step part and a plurality of second heat conduction parts extending from the first heat dissipation fin.
  • a second heat conduction part extends to a first step
  • a second chip is arranged on a second heat conducting part.
  • the second heat sink is arranged to be attached to the side wall of the second stepped portion, and the shape and size of the second heat sink match the side wall of the second stepped portion.
  • the laser further includes a housing (not shown) and a fan.
  • the substrate, the first chip, the second chip, the focusing lens, the beam combiner, the first collimating unit and the second collimating unit are all located in the housing.
  • the shell is provided with an air inlet (not shown in the figure) and an air outlet (not shown in the figure).
  • the fan is set at the air inlet or the air outlet. Under the action of the fan, the outside wind can enter the shell from the air inlet and then from the air outlet Leaving the shell, the external wind and the wind inside the shell are exchanged, and the shell forms an air duct for transmitting wind between the air inlet or the air outlet.
  • the first heat dissipation assembly further includes a plurality of first fins extending from the first fin, the plurality of first fins are stacked, and a first gap is reserved between two adjacent first fins.
  • the first fin is located on the above-mentioned air duct, the heat of the first chip is transmitted to the plurality of first fins through the first heat conducting part and the first heat dissipation part, and the heat on the first fin can be taken away by the wind on the air duct and transferred to The external space is beneficial to improve the heat dissipation effect of the heat dissipation of the first chip.
  • the second heat dissipation assembly further includes a plurality of second fins extending from the second heat dissipation fin, the plurality of second fins are stacked, and a second gap is reserved between two adjacent second fins , A plurality of second fins are located on the above-mentioned air duct, the heat of the second chip is transmitted to the plurality of second fins through the second heat conducting part and the second heat dissipation part, and the heat on the second fins can be taken away by the wind on the air duct, In addition, it is transmitted to the outside space, which is beneficial to improve the heat dissipation effect of heat dissipation of the second chip.
  • the second optical cores are located on the multiple second steps of the second step portion.
  • the light emitted by the multiple first optical cores located on the multiple first steps on the first step portion passes through the first reflector and the second reflector and passes through the second reflection on the second step portion
  • the light reflected by the mirror and emitted by the multiple second optical cores on the multiple second steps is combined at the beam combiner, and a larger number of beams will be obtained.
  • the number of chips is increased due to the symmetrical stepwise arrangement of the chips. To increase the overall power of the laser, so as to achieve greater power of the laser under the premise of little change in the volume of the laser.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

一种激光器，包括：基板（10），设置有第一阶梯部（101）和第二阶梯部（102），并且分别设置有多个第一台阶（1011）和多个第二台阶（1021）；多个第一光芯（20），设置于第一台阶（1011）上；多个第一反射镜（40），设置于第一台阶（1011）上，用于接收并且反射位于同一第一台阶（1011）上第一光芯（20）所输出的光束；多个第二光芯（30），设置于第二台阶（1021）上；多个第二反射镜（50），设置于第二台阶（1021）上，用于接收并且反射位于同一第二台阶（1021）上第二光芯（30）所输出的光束；第三反射镜（60），位于第一阶梯部（101）和第二阶梯部（102）之间，用于接收并且反射多个第一反射镜（40）所输出的光束；合束器（70），位于第一阶梯部（101）和第二阶梯部（102）之间，用于对光束进行合束处理，实现激光器功率的增加。

Description

一种激光器 技术领域
本发明实施例涉及光纤技术领域，特别是涉及一种激光器。
背景技术
随着光光纤激光器的发展，人们对光纤耦合半导体激光器的功率要求越来越高。想要获得更高功率的半导体激光器，一是提高单芯片功率；二是增加光纤激光器中芯片的数量。在芯片没更新换代前，单芯片功率存在功率上限，所以增加芯片数量是提高光耦合半导体激光器功率的有效方法。
发明内容
本发明实施例主要解决的技术问题是提供一种激光器，能够实现激光器功率增加。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种激光器，其特征在于，包括：基板，设置有第一阶梯部和第二阶梯部，所述第一阶梯部设置有多个第一台阶，所述第二阶梯部设置有多个第二台阶；多个第一光芯，一所述第一光芯设置于一所述第一台阶上；多个第一反射镜，一所述第一反射镜设置于一所述第一台阶上，并且一所述第一反射镜用于接收并且反射与其位于同一第一台阶上的第一光芯所输出的光束，多个第二光芯，一所述第二光芯设置于一所述第二台阶上；
多个第二反射镜，一所述第二反射镜设置于一所述第二台阶上，并且一所述第二反射镜用于接收并且反射与其位于同一第二台阶上的第二光芯所输出的光束；第三反射镜，设置于所述基板，并且位于所述第一阶梯部和第二阶梯部之间，所述第三反射镜用于接收并且反射所述多个第一反射镜所输出的光束；合束器，设置于所述基板，并且位于所述第一阶梯部和第二阶梯部之间，所述合束器用于对所述第三反射镜和所述多个第一反射镜所输出的光束进行合束处理。
可选的，所述的激光器还包括光纤，所述光纤的一端固定于所述基板上，并且所述光纤的一端的端部与所述合束器对应，用于接收合束器所输出的光 束。
可选的，所述激光器还包括多个第一准直单元；
一所述第一准直单元设置于一所述第一台阶，一所述第一准直单元用于对处于同一第一台阶的所述第一光芯输出的光进行准直处理之后输入处于同一第一台阶的第一反射镜。
可选的，所述第一准直单元包括第一快轴准直透镜和第一慢轴准直透镜；所述第一快轴准直透镜靠近所述第一光芯设置，所述第一慢轴准直透镜靠近所述第一反射镜设置。
可选的，所述激光器还包括多个第二准直单元；一所述第二准直单元设置于一所述第二台阶，一所述第二准直单元用于对处于同一第二台阶的所述第二光芯输出的光进行准直处理之后输入处于同一第二台阶的第二反射镜。
可选的，所述第二准直单元包括第二快轴准直透镜和第二慢轴准直透镜；所述第二快轴准直透镜靠近所述第二光芯设置，所述第二慢轴准直透镜靠近所述第二反射镜设置。
可选的，所述激光器还包括聚焦透镜；所述聚焦透镜设置于基板，并且所述聚焦透镜位于所述合束器与所述光纤之间，所述聚焦透镜用于对合束器输出的光束进行聚焦之后输入光纤。
可选的，所述聚焦透镜和第一阶梯部位于所述合束器的一侧，所述第二阶梯部位于所述合束器的另一侧。
可选的，所述第一阶梯部和第二阶梯部的高度相同。
可选的，所述第一光芯和第二光芯均为半导体激光芯片。
本发明实施例的有益效果是：
区别于现有技术的情况，本发明实施例由于多个第一光芯位于第一阶梯部的多个第一台阶上，第二光芯位于第二阶梯部的多个第二台阶，当位于第一阶梯部上多个第一台阶上的多个第一光芯发射的光线经过所述第一反射镜和第二反射镜与第二阶梯部上经由第二反射镜反射出来的由多个第二台阶上的多个第二光芯发射的光在合束器处合束，将得到数量更多的光束，由于采用芯片对称阶梯式排列的方法增加芯片的数量来提高激光器的总体功率，从而实现在激光器体积变动不大的前提下使激光器具备更大的功率。
附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1是本发明激光器实施例的俯视图；
图2是本发明激光器实施的前视图；
图3是本发明激光器实施例的光线对比示意图。
具体实施方式
为了便于理解本发明，下面结合附图和具体实施例，对本发明进行更详细的说明。需要说明的是，当元件被表述“固定于”另一个元件，它可以直接在另一个元件上、或者其间可以存在一个或多个居中的元件。当一个元件被表述“连接”另一个元件，它可以是直接连接到另一个元件、或者其间可以存在一个或多个居中的元件。本说明书所使用的术语“垂直的”、“水平的”、“左”、“右”以及类似的表述只是为了说明的目的。
除非另有定义，本说明书所使用的所有的技术和科学术语与属于本发明的技术领域的技术人员通常理解的含义相同。本说明书中在本发明的说明书中所使用的术语只是为了描述具体的实施例的目的，不是用于限制本发明。本说明书所使用的术语“和/或”包括一个或多个相关的所列项目的任意的和所有的组合。
请参阅图1和图2，一种激光器1，包括基板10、多个第一光芯20、多个第二光芯30、多个第一反射镜40、多个第二反射镜50、第三反射镜60和合束器70。多个第一光芯20所输出的光束经过多个第一反射镜40反射之后到达第三反射镜60，再由第三反射镜60反射后进入合束器70，多个第二光芯30所输出的光束经过多个第二反射镜50反射进入合束器70，由合束器70进行合束。
对于上述基板10，如图1所示，所述基板10设置有第一阶梯部101和第二阶梯部102，所述第一阶梯部101设置有多个第一台阶1011，多个第一台 阶1011凸出于基板10，并且逐级依次设置。所述第二阶梯部102设置有多个第二台阶1021，多个第二台阶1021凸出于基板10，并且逐级依次设置。
对于上述多个第一光芯20，所述多个第一光芯20分别设置于所述多个第一台阶1011上，并且一个第一光芯20位于一个第一台阶1011上。在一些实施例中，第一光芯20可以为半导体激光芯片，所述半导体激光芯片产生的光线具有更高的能量，光线质量也相对更高。
对于上述多个第一反射镜40，所述多个第一反射镜40设置于所述第一台阶1011上，一个第一台阶1011设置有一个第一反射镜40，并且所述多个第一光芯20与所述多个第一反射镜40一一对应。一个第一光芯20所输出的光束经过与其对应的第一反射镜40反射到达所述第三反射镜60，然后经由第三反射镜反射进入合束，由于第一光芯20呈阶梯设置，因此，多个第一光芯20叠加形成合束。
对于上述多个第二光芯30，所述多个第二光芯30设置于所述第二台阶1021上，并且一个第二光芯30位于一个第二台阶1021上。在一些实施例中，第二光芯30可以为半导体激光芯片，所述半导体激光芯片产生的光线具有更高的能量，光线质量也相对更高。
对于上述多个第二反射镜50，所述多个第二反射镜50设置于所述第二台阶1021上，并且所述多个第二光芯30与所述多个第二反射镜50一一对应。一个第二光芯30所输出的光束经过与其对应的第二反射镜50反射，由于第二光芯30呈阶梯设置，因此，多个第二光芯30叠加形成合束。
对于上述第三反射镜60和合束器70，所述第三反射镜60和合束器70均设置于所述基板10，第三反射镜60还位于所述第一阶梯部101和所述第二阶梯部102之间。当光线从所述多个第一光芯20和所述多个第二光芯30射出后经过与之对应的所述多个第一反射镜40与所述多个第二反射镜50，然后由所述第一反射镜40反射出来的光线经由所述第三反射镜60反射后与所述第二反射镜50反射出来的光线到达所述合束器70进行光线合束处理
通过设置第一阶梯部101和第二阶梯部102，然后分别在第一阶梯部101和第二阶梯部102分别设置第一芯片20和第二芯片30，再通过第一反射镜50和第二反射镜60进行反射，第三反射镜60反射从第一反射镜40反射出来的光线，最后通过合束器70进行合束，实现了在具备相同数量的光芯条件下， 降低了激光器整体的高度。此外，光线竖直方向尺寸h2仅为单列结构竖直方向尺寸h1的一半，进而缩小了光线的NA值，提高了光线的质量。
在一些实施例中，所述第一阶梯部101和所述第二阶梯部102的高度相同。所述第一阶梯部101的多个第一台阶1011和所述第二阶梯部的多个第二台阶1021高度一一对应，当所述位于所述第一阶梯部101多个第一台阶1011上的第一光芯20所发出的光与高度相对应位于所述第二阶梯部102多个第二台阶1021上第二光芯30所发出的光可以一一对应，并且在所述合束器70合束后将得到光功率更大的光束。
在一些实施例中，所述合束器70还包括半波片701，所述半波片701设置于所述合束器70近所述第三反射镜60一端。所述半波片701对由所述第三反射镜60反射过来的光束进行偏振筛选，从而改变光束的偏振方向。由此，从所述第一光芯20发射出来的光束在经过所述第一反射镜40和所述第三反射镜60以及所述半波片701后到达所述合束器70，从所述第二光芯30发射出来的光束在经过所述第二反射镜50后到达所述合束器，至此分别由所述第一光芯20与第二光芯30所发出的光束在所述合束器70进行合束处理，由于所述半波片701对光束的偏振处理，使得经过所述合束器70合束后的光束质量更好。
在一些实施例中，所述激光器1还包括光纤80，所述光纤80的一端固定在所述基板10上，并且所述光纤80的一端的端部与所述合束器70对应，所述光纤80用于接收从所述合束器70出来的光束。
在一些实施例中，所述激光器1还包括多个第一准直单元201，所述多个第一准直单元201分别设置于所述第一台阶1011的各个阶梯上并且与位于该阶梯上的所述第一光芯20对应。所述第一光芯20输出的光在经过所述第一准直单元201变为平行光，经由所述第一反射镜40反射后进入所述合束器70，由于所述第一光芯20与所述第二光芯30分排布置，由此从所述第一光芯20发射的光束在经过所述第一反射镜40与所述第三反射镜后进入合束器70的光束高度降低，进而缩小了光束的NA值，提高了光束的质量。
具体的，所述第一准直单元201还包括第一快轴准直透镜2011和第一慢轴准直透镜2012。所述第一快轴准直透镜2011设置于靠近所述第一光芯20一侧，所述第一慢轴准直透镜2012设置于靠近所述第二反射镜40一侧。当 光线从所述第一光芯20射出后经过所述第一快轴准直透镜2011进行初步准直，使光线尽可能多的到达所述第一慢轴准直透镜2012，所述第一慢轴准直透镜2012将光线准直为互相平行的光，由此可使从所述第一慢轴准直透镜2012出来的平行光更多，从而使经过所述第一反射镜40与第三反射镜60后经由所述合束器70合束后的光束质量更高。
在一些实施例中，所述激光器1还包括多个第二准直单元202，所述多个第二准直单元202分别设置于所述第二台阶1021的各个阶梯上并且与位于该阶梯上的所述第二光芯30对应。由此所述第二光芯30输出的光在经过所述第二准直单元202变为平行光，经由所述第二反射镜50和所述合束器70，由于所述第一光芯20与所述第二光芯30分排布置，由此从所述第二光芯发射的光束经由所述第二反射镜40进入合束器70的光束高度降低，进而缩小了光束的NA值，提高了光束的质量。
具体的，所述第二准直单元202包括第二快轴准直透镜2021和第二慢轴准直透镜2022所述第二快轴准直透镜2021设置于靠近所述第二光芯30一侧，所述第二慢轴准直透镜2022设置于靠近所述第二反射镜50一侧。当光线从所述第二光芯30射出后经过所述第二快轴准直透镜2021进行初步准直，使光线尽可能多的到达所述第二慢轴准直透镜2022，所述第二慢轴准直透镜2022将光线准直为互相平行的光，由此可使从所述第二慢轴准直透镜2022出来的平行光更多，从而使经过所述第二反射镜50与第三反射镜60后经由所述合束器70合束后的光束质量更高。
在一些实施例中，所述激光器1还包括聚焦透镜90，所述聚焦透镜90设置于所述基板10，并且所述聚焦透镜90位于所述合束器与所述光纤80之间。所述聚焦透镜90将从所述合束器70出来的光束进行聚焦后输入所述光纤80。
在一些实施例中，所述聚焦透镜90位于第一阶梯部101的一侧，所述聚焦透镜90和所述第一阶梯部101均位于所述合束器70的同一侧。
在一些实施例中，激光器还包括第一散热组件(图未示)、第二散热组件(图未示)、第一热沉(图未示)和第二热沉(图未示)。
第一散热组件包括设置于第一阶梯部的侧壁的第一散热片和自所述第一散热片延伸得到的多个第一导热部，一第一导热部延伸至一第一台阶上，一第一芯片设置于一第一导热部上。在第一芯片在工作时，第一芯片的热量通 过第一导热部传输对第一散热片上，由于第一散热片进行散热。在一些实施例中，第一散热片呈贴合于第一阶梯部的侧壁设置，并且第一散热片的形状与尺寸与第一阶梯部的侧壁相匹配。
第二散热组件包括设置于第二阶梯部的侧壁的第二散热片和自所述第一散热片延伸得到的多个第二导热部，一第二导热部延伸至一第一台阶上，一第二芯片设置于一第二导热部上。在第二芯片在工作时，第二芯片的热量通过第二导热部传输对第二散热片上，由于第二散热片进行散热。在一些实施例中，第二散热片呈贴合于第二阶梯部的侧壁设置，并且第二散热片的形状与尺寸与第二阶梯部的侧壁相匹配。
在一些实施例中，激光器还包括壳体(图未示)和风机。基板、第一芯片、第二芯片、聚焦透镜、合束器、第一准直单元和第二准直单元均位于壳体内。壳体设置进风口(图未示)和出风口(图未示)，风机设置于进风口或者出风口处，在风机的作用下，外界的风可以从进风口进入壳体，再从出风口离开壳体，实现外界的风和壳体内部的风进行交换，而壳体在进风口或者出风口之间形成传输风的风道。第一散热组件还包括自第一散热片延伸得到的多个第一翼片，多个第一翼片层叠设置，并且相邻两个第一翼片之间预留有第一间隙，多个第一翼片位于上述风道上，第一芯片的热量通过第一导热部和第一散热部传输至多个第一翼片上，第一翼片上的热量可通过风道上的风带走，并且传送至外界空间，有利于提高对第一芯片进行散热的散热效果。同样的，第二散热组件还包括自第二散热片延伸得到的多个第二翼片，多个第二翼片层叠设置，并且相邻两个第二翼片之间预留有第二间隙，多个第二翼片位于上述风道上，第二芯片的热量通过第二导热部和第二散热部传输至多个第二翼片上，第二翼片上的热量可通过风道上的风带走，并且传送至外界空间，有利于提高对第二芯片进行散热的散热效果。
在本发明实施例中，由于所述多个第一光芯位于所述第一阶梯部的多个第一台阶上，所述第二光芯位于所述第二阶梯部的多个第二台阶，当位于所述第一阶梯部上多个第一台阶上的多个第一光芯发射的光线经过所述第一反射镜和第二反射镜与所述第二阶梯部上经由第二反射镜反射出来的由多个第二台阶上的多个第二光芯发射的光在合束器处合束，将得到数量更多的光束，由于采用芯片对称阶梯式排列的方法增加芯片的数量来提高激光器的总体功 率，从而实现在激光器体积变动不大的前提下使激光器具备更大的功率。
需要说明的是，本发明的说明书及其附图中给出了本发明的较佳的实施例，但是，本发明可以通过许多不同的形式来实现，并不限于本说明书所描述的实施例，这些实施例不作为对本发明内容的额外限制，提供这些实施例的目的是使对本发明的公开内容的理解更加透彻全面。并且，上述各技术特征继续相互组合，形成未在上面列举的各种实施例，均视为本发明说明书记载的范围；进一步地，对本领域普通技术人员来说，可以根据上述说明加以改进或变换，而所有这些改进和变换都应属于本发明所附权利要求的保护范围。

Claims (10)

  1. 一种激光器，其特征在于，包括：
    基板，设置有第一阶梯部和第二阶梯部，所述第一阶梯部设置有多个第一台阶，所述第二阶梯部设置有多个第二台阶；
    多个第一光芯，一所述第一光芯设置于一所述第一台阶上；
    多个第一反射镜，一所述第一反射镜设置于一所述第一台阶上，并且一所述第一反射镜用于接收并且反射与其位于同一第一台阶上的第一光芯所输出的光束，
    多个第二光芯，一所述第二光芯设置于一所述第二台阶上；
    多个第二反射镜，一所述第二反射镜设置于一所述第二台阶上，并且一所述第二反射镜用于接收并且反射与其位于同一第一台阶上的第二光芯所输出的光束；
    第三反射镜，设置于所述基板，并且位于所述第一阶梯部和第二阶梯部之间，所述第三反射镜用于接收并且反射所述多个第一反射镜所输出的光束；
    合束器，设置于所述基板，并且位于所述第一阶梯部和第二阶梯部之间，所述合束器用于对所述第三反射镜和所述多个第一反射镜所输出的光束进行合束处理。
  2. 根据权利要求1所述的激光器，其特征在于，还包括光纤，所述光纤的一端固定于所述基板上，并且所述光纤的一端的端部与所述合束器对应，用于接收合束器所输出的光束。
  3. 根据权利要求1或2所述的激光器，其特征在于，还包括多个第一准直单元；
    一所述第一准直单元设置于一所述第一台阶，一所述第一准直单元用于对处于同一第一台阶的所述第一光芯输出的光进行准直处理之后输入处于同一第一台阶的第一反射镜。
  4. 根据权利要求3所述的激光器，其特征在于，所述第一准直单元包括第一快轴准直透镜和第一慢轴准直透镜；
    所述第一快轴准直透镜靠近所述第一光芯设置，所述第一慢轴准直透镜靠近所述第一反射镜设置。
  5. 根据权利要求1或2所述的激光器，其特征在于，还包括多个第二准直单元；
    一所述第二准直单元设置于一所述第二台阶，一所述第二准直单元用于对处于同一第二台阶的所述第二光芯输出的光进行准直处理之后输入处于同一第二台阶的第二反射镜。
  6. 根据权利要求5所述的激光器，其特征在于，所述第二准直单元包括第二快轴准直透镜和第二慢轴准直透镜；
    所述第二快轴准直透镜靠近所述第二光芯设置，所述第二慢轴准直透镜靠近所述第二反射镜设置。
  7. 根据权利要求2所述的激光器，其特征在于，还包括聚焦透镜；
    所述聚焦透镜设置于基板，并且所述聚焦透镜位于所述合束器与所述光纤之间，所述聚焦透镜用于对合束器输出的光束进行聚焦之后输入光纤。
  8. 根据权利要求7所述的激光器，其特征在于，
    所述聚焦透镜和第一阶梯部位于所述合束器的一侧，所述第二阶梯部位于所述合束器的另一侧。
  9. 根据权利要求1所述的激光器，其特征在于，
    所述第一阶梯部和第二阶梯部的高度相同。
  10. 根据权利要求1所述的激光器，其特征在于
    所述第一光芯和第二光芯均为半导体激光芯片。
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CN112909736A (zh) * 2021-02-05 2021-06-04 深圳市星汉激光科技股份有限公司 一种半导体激光器

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