WO2021047948A1 - Composant électronique passif souple et son procédé de production - Google Patents

Composant électronique passif souple et son procédé de production Download PDF

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Publication number
WO2021047948A1
WO2021047948A1 PCT/EP2020/074315 EP2020074315W WO2021047948A1 WO 2021047948 A1 WO2021047948 A1 WO 2021047948A1 EP 2020074315 W EP2020074315 W EP 2020074315W WO 2021047948 A1 WO2021047948 A1 WO 2021047948A1
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WO
WIPO (PCT)
Prior art keywords
electronic component
passive electronic
flexible passive
electrical
electrical structure
Prior art date
Application number
PCT/EP2020/074315
Other languages
English (en)
Inventor
Christian Neumann
Tim Asmus
Stefan Dietmann
Christoph Nick
Original Assignee
Heraeus Nexensos Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Nexensos Gmbh filed Critical Heraeus Nexensos Gmbh
Priority to EP20761615.2A priority Critical patent/EP4028737A1/fr
Priority to KR1020227007688A priority patent/KR20220042224A/ko
Priority to US17/641,521 priority patent/US20220357213A1/en
Priority to JP2022505450A priority patent/JP7364781B2/ja
Priority to CN202080041994.5A priority patent/CN113939713A/zh
Publication of WO2021047948A1 publication Critical patent/WO2021047948A1/fr

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
    • G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
    • G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
    • G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
    • G01D5/16—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying resistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K13/00—Thermometers specially adapted for specific purposes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147—Semiconductor insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/4985—Flexible insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors

Definitions

  • the invention relates to a flexible passive electronic component, in particular to a sensor measuring the change in electric resistance caused by external impacts such as temperature, gas absorption, chemical reactions, particle flow, light input and force input.
  • the flexible passive electronic component has an electrical structure in which the electric resistance of the electrical structure changes by the external input.
  • the electrical structure is provided on a substrate.
  • the invention also relates to a method for producing the flexible passive electronic component, especially the sensor.
  • a temperature sensor is an example of such a sensor.
  • the temperature coefficient x(T) - at least at temperatures 0 ⁇ T ⁇ 200°C - is constant and independent from the temperature.
  • a resistance coefficient independent from the temperature is advantageous as it facilitates the determination of the temperature from the resistance measured value.
  • the substrate should have a similar coefficient of thermal expansion (CTE) to that of the sensor metal deposited on it. Especially, if the CTE of the substrate is larger than that of the metal, cracks in the metal layer can occur, and this leads to an undesired drift of the sensor.
  • CTE coefficient of thermal expansion
  • Aluminium oxide (AI 2 O 3 ) is a particularly suitable substrate for Pt thin-film sensors.
  • the CTE of AI 2 O 3 is 6.5-8.9E-6 (1/K) and is therefore similar to the CTE of the platinum with 8.8E-6 (1/K).
  • ceramic bodies as substrates for temperature sensors have the disadvantage of a lack of mechanical stability with a substrate thickness below 500 pm.
  • the handleability of larger substrates becomes difficult even at the thickness of less than 1000 pm due to the high tendency to break.
  • U.S. Patent Number 9,209,047 discloses a flexible semiconductor device in which a device layer is arranged on a polymer layer.
  • the object of the invention is to realize a precise and at the same time flexible passive electronic component, flat sensor.
  • a flexible passive electronic component in particular a sensor, whose substrate is formed from an insulating layer and optionally a further inorganic layer with a total thickness of at most 50 pm, and whose height is at most 150 pm.
  • the inorganic layer shows no temporal change and has a relatively low CTE.
  • the inorganic layer or the substrate consisting of the insulating layer and the inorganic layer can be thinned down to a thickness of 50 pm or less, while keeping the mechanical stability.
  • the thinned substrate provides flexibility to the flexible passive electronic component. This flexibility can still be maintained by the limited overall height of the flexible passive electronic component with at most 150 pm.
  • the flexible passive electronic component, especially the sensor, with small mass follows rapidly the surrounding environment, resulting in a quick response in measurements.
  • the flexible passive electronic component is not an integrated circuit (IC) or does not contain an integrated circuit (IC).
  • the substrate has a thickness of at most 35 pm, particularly preferably at most 20 pm. It proves to be especially advantageous because the thinner substrate provides more flexibility while maintaining its stability.
  • the minimum thickness of the inorganic layer together with the insulating layer is exemplified by 10 pm.
  • the substrate consists only of the insulating layer.
  • the flexible passive electronic component has a height of at most 70 pm, particularly preferably at most 40 pm.
  • the reduced height of the flexible passive electronic component proves to be advantageous in terms of more flexibility and quicker responsiveness.
  • the flexible passive electronic component has a flexibility that is bendable with a radius of bending curvature of at least 5 mm, preferably at least 2 mm, preferably at least 1 mm, wherein a relative difference of resistivity (d R/R(0), wherein d means delta or D) of the electrical structure before and after bending may not exceed 0,5%.
  • the flexible passive electronic component with such a flexibility may be suitable for use under a bending stress due to a thermal expansion/shrink or external mechanical stress.
  • Such a flexibility of the flexible passive electronic component can be measured as follows.
  • the flexible passive electronic component is glued on a Polyimide foil (Kapton®, 25 pm) to determine the flexible passive electronic component’s flexibility.
  • a Polyimide foil Kerpton®, 25 pm
  • a cyano-based glue MINEA, superglue
  • MINEA cyano-based glue
  • the polyimide foil is wrapped around a cylindrical bar with the flexible passive electronic component directed outwards.
  • the diameter of the bar is chosen to be in the range of 0,5 mm to 10 mm.
  • the polyimide foil When being wrapped, the polyimide foil is in close contact with the surface of the cylindrical bar. Therefore, the radius of curvature applied to the flexible passive electronic component is approximatively half of the bar’s diameter.
  • the duration at which maximal bending is applied is set to approximately one second.
  • the relative difference of resistivity d R/R(0) (wherein d means delta or D) of the electrical structure is measured before and after each bending cycle.
  • the flexible passive electronic component is meant to be flexible as long as the radius of curvature is not smaller than the minimal radius Rm.
  • the inorganic layer is preferably made of an inorganic crystalline material, in particular silicon, silicon carbide, gallium arsenide or sapphire, or is made of an inorganic amorphous material, in particular quartz glass, borosilicate glass or glass, or preferably is made from a silicon-on- insulator (SOI) wafer.
  • an inorganic crystalline material in particular silicon, silicon carbide, gallium arsenide or sapphire
  • an inorganic amorphous material in particular quartz glass, borosilicate glass or glass, or preferably is made from a silicon-on- insulator (SOI) wafer.
  • SOI silicon-on- insulator
  • the flexible passive electronic component has a length, a width and the height, wherein the cross-section (length x width) is at most 4 mm 2 , preferably at most 2 mm 2 , particularly preferably at most 1 mm 2 . Owing to the comparatively small length and width with the limited height, advantageously a low mass and consequently a rapid responsiveness are guaranteed.
  • the electrical structure includes at least one conductor track and at least two electrical contact pads, wherein the at least two electrical contact pads are electrically connected to the at least one conductor track.
  • the conductor track may be constructed to extend in the shape of a meander.
  • the at least one conductor track has a uniform width, wherein the width is not more than 5 pm and the standard deviation of the width is not more than 5% of the width.
  • the thin and uniform conductor track is advantageous for quick and stable response to the rapidly changing measurement parameters.
  • the conductor track may be formed at least partially as an adjustment straining to allow in-line trimming of the conductor track’s overall resistance.
  • the conductor track has a temperature coefficient of electrical resistance of at least 3.000 ppm/K, preferably at least 3.500 ppm/K, particularly preferably at least 3.800 ppm/K.
  • the flexible passive electronic component may further comprise at least one additional electrical structure.
  • Each additional electrical structure may include at least one conductor track.
  • the electrical structure and the at least one additional electrical structure may be arranged in a multilayer structure such that: a) the conductor tracks of the electrical structure and the at least one additional electrical structure are arranged one above the other on different planes; and b) the adjacent conductor tracks lying one above the other are at least partially separated from one another by an additional insulating layer; and optionally c) the adjacent conductor tracks lying one above the other are electrically connected to one another via one or more conductor vias formed through the additional insulating layer.
  • the increased sensing area with the multi-layered electrical structure is advantageous for the improved sensing accuracy and performance, while keeping the flexible passive electronic component small.
  • the insulating layer is made of metal oxides and/or metal nitrides, in particular silicon dioxide, silicon nitride, aluminium oxide, aluminium nitride, hafnium oxide or hafnium nitride.
  • the insulating layer made of such a material exhibits stable electrical insulation on the inorganic layer.
  • the material of the insulating layer is not limited to these, as long as necessary electrical insulation can be obtained on the substrate surface.
  • the flexible passive electronic component may further comprise a cover layer at least partially covering the electrical structure.
  • the cover layer may be formed from an inorganic layer. The electrical structure is thereby protected, particularly in an aggressive environment, so that the long-term stability can be achieved.
  • the flexible passive electronic component may further comprise a first protective layer.
  • the first protective layer at least partially, in particular completely, covers the cover layer.
  • the first protective layer may be made of polymeric material such as polystyrene (PS), polyethylene (PE) and polyimide (PI).
  • PS polystyrene
  • PE polyethylene
  • PI polyimide
  • the material consists of photostructurable polyimide (PS-PI). The material is photostructured according to a mask of the cover layer.
  • the electrical structure is designed as a sensor element and/or heater element.
  • the sensor may be designed as a temperature sensor, flow sensor, particle sensor or chemical sensor.
  • one heater element may be arranged between two temperature sensor elements in the flow direction.
  • the electrical structure may have an electrical resistance of at least 100 Ohm, preferably at least 1.000 Ohm, particularly preferably at least 10.000 Ohm. Low self-heating is thereby achieved.
  • the electrical structure as the heater element may have an electrical resistance of at most 5 Ohm, preferably at most 2 Ohm, preferably at most 1 Ohm.
  • the conductor track of the heater element is preferably designed as a square, a U-loop.
  • the heater is designed as multiple parallel addressed conductor tracks, whereas the conductor tracks have uniform width, the width being not more than 5 pm and the standard deviation of the width being not more than 5% of the width.
  • the electric structure is combined with a communications system.
  • the communications system may include one or more wireless interfaces and/or one or more wireline interfaces, which allow the electric structure to communicate via one or more networks.
  • Such wireless interfaces may provide for communication under one or more wireless communication protocols, such as Bluetooth and/or WiFi (e.g., an IEEE 802.11 protocol) and/or Long-Term Evolution (LTE) and/or WiMAX (e.g., an IEEE 802.16 standard) and/or a radio frequency ID (RFID) protocol and/or near-field communication (NFC) and/or other wireless communication protocols.
  • wireless communication protocols such as Bluetooth and/or WiFi (e.g., an IEEE 802.11 protocol) and/or Long-Term Evolution (LTE) and/or WiMAX (e.g., an IEEE 802.16 standard) and/or a radio frequency ID (RFID) protocol and/or near-field communication (NFC) and/or other wireless communication protocols.
  • WiFi e.g., an IEEE 802.11 protocol
  • LTE Long-Term Evolution
  • WiMAX e.g., an IEEE 802.16 standard
  • RFID radio frequency ID
  • NFC near-field communication protocols
  • the flexible passive electronic component may further comprise a second protective layer on the lower side of the inorganic layer.
  • the second protective layer may be made of polymeric material such as polystyrene (PS), polyethylene (PE) and polyimide (PI).
  • PS polystyrene
  • PE polyethylene
  • PI polyimide
  • the flexible passive electronic component system comprises at least one flexible passive electronic component according to any of the above inventive aspects, and at least one electrical control.
  • the electrical control may be electrically connected to the electrical structure.
  • the electrical control is configured to control the flexible passive electronic component.
  • the electrical control is configured to supply a constant current to the electrical structure (resistance element), to measure the voltage across the electrical structure, calculate the resistance value based on Ohm's law, and derive a temperature corresponding to the resistance value.
  • the above objective is accomplished according to an inventive method for producing a flexible passive electronic component, in particular an aforementioned flexible passive electronic component according to the invention.
  • the method comprises following process steps: a) providing an inorganic wafer having an upper side and a lower side, b) applying an insulating layer on the upper side of the inorganic wafer, c) applying and structuring an electrical structure or multilayered electrical structure on the insulating layer, d) applying a cover layer on the electrical structure, e) thinning the inorganic wafer on its lower side, particularly by mechanical removal and/or an etching process, to a thickness of a substrate, which comprises the insulating layer and optionally the inorganic wafer, of at most 50 pm, preferably at most 35 pm, particularly preferably at most 20 pm.
  • a metal layer may be first applied to an inorganic wafer such as silicon wafer, silicon-on-insulator (SOI) wafer or glass wafer, which is then photolithographically structured.
  • the metal layer may be made of platinum (Pt), aluminium (Al), nickel (Ni) or alloys such as an aluminium-copper (Al-Cu) alloy with 99,5% Al and 0,5% Cu, or an alloy containing at least Pt, Al and/or Ni.
  • the method may further comprise steps of: f) applying a protective layer on the side of the electrical structure and/or the lower side of the substrate, and optionally g) removing the first protective layer after the step of thinning the inorganic wafer.
  • step e) the inorganic wafer is completely removed so that the substrate comprises only the insulation layer.
  • FIG. 1 shows a cross section of a first preferred embodiment of a flexible passive electronic component, in particular a sensor, of the invention
  • FIG. 2 shows a plan view of the flexible passive electronic component in accordance with FIG.
  • FIGS. 3A to 3M show cross sectional views of a technique for manufacturing a flexible passive electronic component in accordance with the invention.
  • FIG. 4 shows a cross section of a second preferred embodiment of a flexible passive electronic component of the invention.
  • a temperature sensor will be mainly described.
  • the application of the present invention is not limited to the temperature sensor, and the invention can be advantageously applied to a flow sensor, a chemical (gas) sensor, particle sensor, or the like.
  • the sensor 1 comprises a substrate 10.
  • the substrate 10 comprises an inorganic layer 2 with an upper side 2a and a lower side 2b, an insulating layer 3, and an electrical structure 4.
  • the insulating layer 3 at least partially covers the upper side 2a of the inorganic layer 2.
  • the insulating layer 3 may cover the entire upper side surface of the inorganic layer 2, as depicted.
  • the electrical structure 4 at least partially covers the insulating layer 3.
  • the substrate 10 has a thickness t10, which is at most 50 p , preferably at most 35 pm, particularly preferably at most 20 pm.
  • the thickness t10 of a substrate 10 is made of a thickness t2 of the inorganic layer 2 and a thickness t3 of the insulating layer 3.
  • the thickness t10 is equivalent to the thickness t3.
  • the sensor 1 has a height hi, which is at most 150 pm, preferably at most 70 pm, particularly preferably at most 40 pm.
  • the thinned substrate 10 provides flexibility to the sensor 1. This flexibility can still be maintained by the limited overall height hi of the sensor 1 with at most 150 pm. Furthermore, the sensor 1 with small mass follows rapidly the surrounding environment, resulting in a quick response in measurements.
  • the inorganic layer 2 may be made of an inorganic crystalline material, in particular silicon, silicon carbide, gallium arsenide or sapphire, or made of an inorganic amorphous material, in particular quartz glass, borosilicate glass or glass, or made from a silicon-on-insulator (SOI) wafer.
  • an inorganic crystalline material in particular silicon, silicon carbide, gallium arsenide or sapphire
  • an inorganic amorphous material in particular quartz glass, borosilicate glass or glass, or made from a silicon-on-insulator (SOI) wafer.
  • SOI silicon-on-insulator
  • the insulating layer 3 may made of metal oxides and/or metal nitrides, in particular silicon dioxide, silicon nitride, aluminium oxide, aluminium nitride, hafnium oxide or hafnium nitride.
  • the electrical structure 4 may be made of platinum, nickel, aluminium or alloys such as an alloy at least containing platinum, nickel and/or aluminium, or an aluminium-copper (Al-Cu) alloy with 99,5% Al and 0,5% Cu.
  • the sensor 1 may further comprise a cover layer 5 at least partially covers the electrical structure 4.
  • the cover layer 5 may expose one or more parts of the electrical structure 4 for one or more electrical contact pads 4a.
  • the cover layer 5 may be formed from an inorganic layer.
  • the sensor 1 may further comprise a protective layer 6 on the lower side 2b of the inorganic substrate 10.
  • the protective layer 6 may be made of polymeric material such as polystyrene (PS), polyethylene (PE) or polyimide (PI).
  • PS polystyrene
  • PE polyethylene
  • PI polyimide
  • the protective layer 6 is not limited to these as long as it has appropriate electrical insulation and heat transfer properties.
  • the specific shape of the electrical structure 4 can be seen from FIG. 2.
  • the two electrical contact pads 4a discussed above extend in parallel and spaced from each other.
  • the total area of the electrical contact pads 4a and the conductor track 4b may be half of the area of the substrate 10.
  • each area of the electrical contact pad 4a is 0,1 mm 2 .
  • the electrical structure 4 may include more than two electrical contact pads 4a in the same plane.
  • the electrical structure 4 includes at least one conductor track 4b.
  • the conductor track 4b is electrically connected to both of the electrical contact pads 4a.
  • the conductor track 4b has a first end and second end. The first end of the conductor track 4b is connected to one contact pad 4a; the second end of the conductor track 4b is connected to the other contact pad 4a.
  • the conductor track has a meander shape that repeatedly bends in S- shape.
  • the shape of the conductor track 4b is not limited to this as long as a necessary conductor length or resistance value is obtained.
  • the conductor track 4b has a uniform width, wherein the width is not more than 5 pm and the standard deviation of the width is not more than 5% of the width.
  • the thin and uniform conductor track 4b is advantageous for quick and stable response to the rapidly changing measurement parameters.
  • the conductor track 4b may be formed at least partially as an adjustment straining.
  • the conductor track 4b may be applied as a sensor element and/or heater element.
  • a catalytic material may be provided on the conductor track 4b as a sensor element.
  • another conductor track (not shown) as a heater element may be placed adjacent to above or below the conductor track 4b as the sensor element.
  • one conductor track as a heater element may be arranged between two conductor tracks as sensor elements.
  • the electrical structure 4 may have an electrical resistance of at least 100 Ohm, preferably at least 1.000 Ohm, particularly preferably at least 10.000 Ohm. Low self-heating is thereby achieved.
  • the electrical structure 4 as the heater element it may have an electrical resistance of at most 5 Ohm, preferably at most 2 Ohm, preferably at most 1 Ohm.
  • the conductor track of the heater element is preferably designed as a square or a U-loop.
  • the heater is designed as multiple parallel addressed conductor tracks, whereas the conductor tracks have uniform width, the width being not more than 5 pm and the standard deviation of the width being not more than 5% of the width.
  • the sensor 1 may further comprises at least one additional electrical structure.
  • Each additional electrical structure may include at least one conductor track which has the same structure as the conductor track 4b described above.
  • the electrical structure 4 and the at least one additional electrical structure may be arranged in a multilayer structure such that: a) the conductor tracks 4b of the electrical structure 4 and the at least one additional electrical structure are arranged one above the other on different planes; and b) the adjacent conductor tracks 4b lying one above the other are at least partially separated from one another by an additional insulating layer; and optionally c) the adjacent conductor tracks 4b lying one above the other are electrically connected to one another via one or more conducting vias formed through the additional insulating layer.
  • the increased sensing area with the multi-layered electrical structures 4 is advantageous for the improved sensing accuracy or performance, while keeping the sensor 1 small.
  • the additional insulating layer may have the same configuration as the insulating layer 3 on the inorganic layer 2.
  • Design example of the sensor for the temperature sensor may be as follows:
  • FIGS. 3A to 3M an embodiment of a method of producing the sensor 1 shown in FIGS. 1 and 2 will be described.
  • FIG. 3A shows an inorganic wafer or plate 2’ having an upper side 2a’ and a lower side 2b’ .
  • the inorganic wafer 2’ may be made of an inorganic crystalline material, in particular silicon, silicon carbide, gallium arsenide or sapphire, or may be made of an inorganic amorphous material, in particular quartz glass, borosilicate glass or glass, or preferably a silicon-on- insulator (SOI) wafer.
  • the wafer 2’ is thinned in a later process. The initial wafer thickness until then is preferably about 0,5 mm to 1 mm for the purpose of easy handling.
  • FIG. 3B shows that an insulating layer 3’ is applied on the upper side 2a’ of the inorganic wafer 2’.
  • the insulating layer 3’ may be an electrically insulating oxide layer.
  • a silicon wafer as the inorganic wafer 2’ is oxidized.
  • a SOI wafer may be used from the beginning.
  • an electrically insulating oxide layer can be deposited.
  • FIG.3C shows that a metal layer 4’ is applied on the electrically insulating layer 3’.
  • the metal layer 4’ may be evaporated or sputtered onto the insulating layer 3’.
  • the metal layer 4’ may be made of platinum (Pt), aluminium (Al), nickel (Ni) or alloys such as an aluminium-copper (Al-Cu) alloy with 99,5 % Al and 0,5 % Cu or alloy containing at least Pt, Al and/or Ni.
  • FIG. 3D shows that a mask M is applied on the metal layer 4’.
  • a photoresist is applied on the metal layer 4’ and is exposed and developed to the predetermined pattern.
  • FIG. 3E shows that a plurality of electrical structures 4 each including at least two electrically contact pads 4a and at least one conductor track 4b are structured from the metal layer 4’.
  • the metal layer 4’ is etched by wet chemical etching or dry etching, leaving parts covered with the mask M.
  • FIG. 3F shows that the mask M is removed by, for instance, stripping.
  • FIG. 3G shows that a cover layer 5 is applied on parts of the electrical structure 4, leaving parts that become the electrical contact pads 4a free.
  • an inorganic material such as silicon dioxide (S1O 2 ) and optionally silicon nitride (S1 3 N 4 ) is applied and structured by dry etching and/or wet etching, leaving parts covered with an additional mask (not shown).
  • the mask is removed by, for example, lift-off.
  • FIG. 3H shows that a first protective layer 7 is applied on the side of the electrical structure 4, covering the electrical structure 4, the cover layer 5, and parts of the insulating layer 3 exposed from the electrical structure 4.
  • the first protective layer 7 may be a polymer layer made of polystyrene (PS), polyethylene (PE), polyimide (PI), or the like.
  • the organic material consists of photostructurable polyimide (PS-PI). The material is photostructured according to the mask of the cover layer 5.
  • the electrical contact pads 4a are passivated with galvanic precious metal layers (not shown) applied thereon.
  • An electroplating such as electro-nickel immersion gold (ENIG) may be applied on the electrical contact pads 4a.
  • ENIG electro-nickel immersion gold
  • FIG. 3I shows that the inorganic wafer 2’ together with the insulation layer 3’ is thinned down to at most 50 pm, preferably at most 35 pm, particularly preferably at most 20 pm, by various processes such as grinding, chemomechanical polishing (CMP), etching, or combination thereof, or the like. It proves to be advantageous that damage and/or contaminations of removed wastes to the electrical structure 4, cover layer 5 and insulating layer 3’ can be effectively prevented under the protection by the first protective layer 7. Besides, the inorganic wafer 2’ can be thinned in a stable state with the help of reinforcement by the first protective layer 7.
  • CMP chemomechanical polishing
  • FIG. 3J shows that a second protective layer 6’ that to be the protective layer 6 is applied on the thinned surface (lower side) of the inorganic wafer 2’.
  • the second protective layer 6’ may be a polymer layer made of polystyrene (PS), polyethylene (PE), polyimide (PI), or the like.
  • FIG. 3K shows that the inorganic wafer 2’ is diced together with the insulating layer 3’, the first protective layer 7’, the second protective layer 6’ and the cover layer 5’ into the individual sensors 1 shown in FIG. 1. These cuts are performed by saw, laser, or the like. These sensors 1 may be further processed in any electronic process compatible with SMT. The production of the sensor 1 is completed.
  • FIG. 3L shows that the first protective layer 7’ and the second protective layer 6’ are removed.
  • the cover layer 5, the parts of the electrical structure 4 and the inorganic wafer 2’ are exposed again.
  • the two protective layers 6’ and 7’ can, for example, be burnt off.
  • FIG. 3M shows an example of sensor connection.
  • the sensor 1 may be mounted on the mount board S with the protective layer 6 facing the mount board S. In an application to a temperature sensor, the sensor 1 may be firmly connected to a surface to be measured.
  • the electrical contact pads 4a of the sensor 1 and the mount board S may be electrically connected by wires.
  • FIG. 4 shows a further preferred embodiment of the invention in which the electrical contact pads 4a are directly connected to electrical lines of a circuit board (not shown).
  • the thickness t4a of the electrical contact pads 4a is larger than the thickness t4b of the conductor track 4b of the electrical structure 4.
  • This structure is achieved by once structuring the conductor track 4b and the electrical contact pads 4a with the same thickness and then selectively edging a portion corresponding to the conductor track 4b.
  • this can be achieved by once structuring the conductor track 4b and the electrical contact pads 4a with the same thickness and then selectively thickening a portion corresponding to the electrical contact pads 4a by further vapor deposition or plating.
  • the advantage of this design is the further reduction of thermal contact area between the thermal sensor and the circuit board to increase the sensitivity of the electrical structure designed as a thermal sensor, especially in the detection of radiant heat.
  • the electrical connectivity is ensured by the use of isotropically conductive adhesives (ICA) and/or anisotropically conductive adhesives (ACA) which additionally improve mechanical stability.
  • ICA isotropically conductive adhesives
  • ACA anisotropically conductive adhesives
  • Execution example 1 Design of a flexible passive electronic component, in particular a flexible sensor, according to the invention
  • a 200 mm silicon wafer with a silicon oxide layer on one side and a layer thickness of 1 ,2 pm is used as the inorganic wafer for the flexible sensor according to the invention.
  • a metal layer is deposited on the silicon oxide layer.
  • the metal layer has a total thickness of 850 nm and consists of an Al-Cu alloy of 99,5% Al and 0,5% Cu.
  • the metal layer is then lithographically divided into individual electrical structures optional isolated from each other.
  • the electrical structures each consist of a conductor track and two contact pads at the two ends of the conductor track.
  • Each line of the conductor track has a homogeneous width and is arranged in a meander shape between the two contact pads.
  • the electrical structures, which are differently designed on the wafer are defined in particular by the following parameters: a) Length of the conductor track (L), b) Width of the conductor track (W),
  • the layout for structuring the metal layer is chosen so that the silicon wafer is divided into square fields, with the field area corresponding to 400 mm 2 each. Each of the fields has the same pattern, consisting of 222 individual electrical structures arranged in individual rows.
  • the electrical structures are divided into different groups, whereby the electrical structures within a group are identical.
  • the electrical structures in at least one of the parameters L, or W differ between the groups.
  • the entire surface of the metal layer is first coated with an inorganic cover layer consisting of oxide and nitride layers.
  • the total thickness of the inorganic cover layer is 1 ,4 pm. To ensure later electrical addressing, this cover layer is opened at the contact pads.
  • the individual structures are characterized electrically one after the other.
  • the two contact pads of an electrical structure are contacted with the two double contact tips of a wafer tester.
  • R0 i.e. the electrical resistance of the electrical structure at a temperature of 0°C
  • TCR temperature coefficient of resistance
  • the mean value of the resistance R0 of structure Z1 is 247,2 Ohm with a standard deviation of 2,1 Ohm relative to the five fields examined.
  • the relative standard deviation of the resistance R0 is 0,85%.
  • the mean value of the TCR is 4137,9 ppm/ K with a standard deviation of 2,4 ppm/ K.
  • the relative standard deviation of the TCR is 0,058%.
  • the electrical resistances of the electrical structures from group Z18 are statistically evaluated.
  • the electrical resistance R of the electrical structures was determined at room temperature.
  • Table 2 As Table 2 shows, the mean value of resistance R of structure Z2 is 9285,6 Ohm with a standard deviation of 131,7 Ohm relative to the three fields studied. Thus, the relative standard deviation of the resistance R is 1,4%.
  • Table 3 shows the mean values and standard deviations of the TCRs of the electrical structures of different groups from field 51.
  • the TCR and the standard deviation of the TCR are largely independent from the width of the conductor track, at least for the conductor track width in the range 0,5 p to 6,5 pm, although a slight but systematic increase of the mean TCR with broader line width is obvious.
  • Execution example 3 Completion of the sensor according to invention from execution example 1
  • the backside of the silicon wafer from the design example 1 is chemomechanically thinned to a wafer plus insulator thickness of approximately 10 pm.
  • a protection layer of polyimide of approximately 13 pm is then applied to the thinned reverse side.
  • the electrical structures are then separated with a laser or by dicing.
  • the individual structures are mechanically flexible and can be bent around a round bar with a radius of less than 1 mm. Repeated bending back and forth around the round bar does not significantly alter the R0 value and the TCR value of the electrical structure.
  • Execution example 4 Using the flexible sensor according to the invention to measure a temperature
  • the electrical structure from design example 3 is attached to the surface of the test piece and the two contact pads are connected via leads to a resistance measuring device. By determining the electrical resistance of the electrical structure and using a calibration curve, the surface temperature of the specimen can be deduced.
  • the contact pads are both raised above the conductor track of the electronic structure.
  • the advantage of this design is to reduce the thermal contact area between the sensor and its mount.
  • the sensor structure is free-floating and the thermal leakage is reduced.
  • the free-floating arrangement of the temperature sensor is realized by connecting the raised contact pads directly to electrical lines of a circuit board.
  • the sensors are flexible if the radius of curvature does is not smaller than 1 mm, by means Rm ⁇ 1mm.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pressure Sensors (AREA)
  • Thermistors And Varistors (AREA)

Abstract

Un composant électronique passif souple comprend un substrat, qui comprend une couche isolante et éventuellement une couche inorganique ayant un côté supérieur et un côté inférieur, la couche isolante recouvrant au moins partiellement le côté supérieur de la couche inorganique éventuelle. Le composant électronique passif souple comprend en outre une structure électrique recouvrant au moins partiellement la couche isolante. Le substrat a une épaisseur, qui est d'au plus 50 µm. Le composant électronique passif souple a une hauteur, qui est d'au plus 150 µm.
PCT/EP2020/074315 2019-09-09 2020-09-01 Composant électronique passif souple et son procédé de production WO2021047948A1 (fr)

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EP20761615.2A EP4028737A1 (fr) 2019-09-09 2020-09-01 Composant électronique passif souple et son procédé de production
KR1020227007688A KR20220042224A (ko) 2019-09-09 2020-09-01 가요성 수동 전자 컴포넌트 및 그 생산 방법
US17/641,521 US20220357213A1 (en) 2019-09-09 2020-09-01 Flexible passive electronic component and method for producing the same
JP2022505450A JP7364781B2 (ja) 2019-09-09 2020-09-01 可撓性受動電子部品およびその生産方法
CN202080041994.5A CN113939713A (zh) 2019-09-09 2020-09-01 柔性被动电子组件及其制造方法

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EP19196138.2A EP3789745B1 (fr) 2019-09-09 2019-09-09 Composant électronique passif flexible et son procédé de production

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4312009A1 (fr) 2022-07-28 2024-01-31 Yageo Nexensos GmbH Liaisons adhésives conductrices anisotropes pour un rtd
EP4312010A1 (fr) 2022-07-28 2024-01-31 Yageo Nexensos GmbH Fabrication de modules de capteur selon un processus de sous-remplissage

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090008132A1 (en) * 2007-07-06 2009-01-08 Ube Industries, Ltd. Flexible wiring board for tape carrier package
US20120112347A1 (en) * 2010-06-11 2012-05-10 Helmut Eckhardt Flexible electronic devices and related methods
US9209047B1 (en) 2013-04-04 2015-12-08 American Semiconductor, Inc. Method of producing encapsulated IC devices on a wafer
US20170127944A1 (en) * 2015-11-05 2017-05-11 Nano And Advanced Materials Institute Limited Temperature sensor for tracking body temperature based on printable nanomaterial thermistor

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5904496A (en) * 1997-01-24 1999-05-18 Chipscale, Inc. Wafer fabrication of inside-wrapped contacts for electronic devices
US8084829B2 (en) * 2004-04-27 2011-12-27 Nxp B.V. Semiconductors device and method of manufacturing such a device
US20100044827A1 (en) * 2008-08-22 2010-02-25 Kinik Company Method for making a substrate structure comprising a film and substrate structure made by same method
JP5978228B2 (ja) 2011-12-08 2016-08-24 新日鉄住金化学株式会社 有機半導体材料及び有機電子デバイス
DE102013214447B3 (de) * 2013-07-24 2014-11-20 Bruker Hts Gmbh Bandförmiges, supraleitendes Element mit verbessertem Eigenschutz im Quenchfall
EP2940729A1 (fr) * 2014-04-28 2015-11-04 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Ensemble électronique comprenant une structure porteuse constituée d'une carte de circuit imprimé

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090008132A1 (en) * 2007-07-06 2009-01-08 Ube Industries, Ltd. Flexible wiring board for tape carrier package
US20120112347A1 (en) * 2010-06-11 2012-05-10 Helmut Eckhardt Flexible electronic devices and related methods
US9209047B1 (en) 2013-04-04 2015-12-08 American Semiconductor, Inc. Method of producing encapsulated IC devices on a wafer
US20170127944A1 (en) * 2015-11-05 2017-05-11 Nano And Advanced Materials Institute Limited Temperature sensor for tracking body temperature based on printable nanomaterial thermistor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4312009A1 (fr) 2022-07-28 2024-01-31 Yageo Nexensos GmbH Liaisons adhésives conductrices anisotropes pour un rtd
EP4312010A1 (fr) 2022-07-28 2024-01-31 Yageo Nexensos GmbH Fabrication de modules de capteur selon un processus de sous-remplissage
WO2024022702A1 (fr) 2022-07-28 2024-02-01 Yageo Nexensos Gmbh Composés conducteurs anisotropes adhésifs pour rtd

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EP4028737A1 (fr) 2022-07-20
JP7364781B2 (ja) 2023-10-18
EP3789745B1 (fr) 2024-04-10
US20220357213A1 (en) 2022-11-10
EP3789745A1 (fr) 2021-03-10
CN113939713A (zh) 2022-01-14
KR20220042224A (ko) 2022-04-04

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