WO2021040442A3 - 레이저 기반 멀티인쇄장치 및 이를 이용한 표면 모폴로지가 제어된 대면적 페로브스카이트 박막의 제조방법 - Google Patents

레이저 기반 멀티인쇄장치 및 이를 이용한 표면 모폴로지가 제어된 대면적 페로브스카이트 박막의 제조방법 Download PDF

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WO2021040442A3
WO2021040442A3 PCT/KR2020/011516 KR2020011516W WO2021040442A3 WO 2021040442 A3 WO2021040442 A3 WO 2021040442A3 KR 2020011516 W KR2020011516 W KR 2020011516W WO 2021040442 A3 WO2021040442 A3 WO 2021040442A3
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thin film
printing apparatus
perovskite thin
same
laser
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PCT/KR2020/011516
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French (fr)
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WO2021040442A2 (ko
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김동유
김연주
황경일
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광주과학기술원
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Publication of WO2021040442A2 publication Critical patent/WO2021040442A2/ko
Publication of WO2021040442A3 publication Critical patent/WO2021040442A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 레이저 기반 멀티인쇄장치 및 이를 이용한 표면 모폴로지가 제어된 페로브스카이트 박막의 제조방법에 관한 것으로, 본 발명에 따른 멀티인쇄장치는 슬롯-다이 코팅기와 같은 인쇄장치, 가스블로어 및 레이져장치가 하나의 모듈로 결합되어 있어, 페로브스카이트 박막의 형성부터 표면 모폴로지 제어까지 단일 공정으로 수행이 가능하므로, 핀홀이 없고 치밀하며 균일하게 코팅된 페로브스카이트 박막 및 이를 포함하는 태양전지를 대면적으로 대량생산이 가능하다.
PCT/KR2020/011516 2019-08-30 2020-08-28 레이저 기반 멀티인쇄장치 및 이를 이용한 표면 모폴로지가 제어된 대면적 페로브스카이트 박막의 제조방법 WO2021040442A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2019-0107585 2019-08-30
KR1020190107585A KR102304347B1 (ko) 2019-08-30 2019-08-30 레이저 기반 멀티인쇄장치 및 이를 이용한 표면 모폴로지가 제어된 대면적 페로브스카이트 박막의 제조방법

Publications (2)

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WO2021040442A2 WO2021040442A2 (ko) 2021-03-04
WO2021040442A3 true WO2021040442A3 (ko) 2021-04-29

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PCT/KR2020/011516 WO2021040442A2 (ko) 2019-08-30 2020-08-28 레이저 기반 멀티인쇄장치 및 이를 이용한 표면 모폴로지가 제어된 대면적 페로브스카이트 박막의 제조방법

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KR (1) KR102304347B1 (ko)
WO (1) WO2021040442A2 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115915875B (zh) * 2022-05-05 2023-08-29 四川大学 一种全狭缝涂布大面积钙钛矿太阳电池的制备方法
CN115867100A (zh) * 2023-03-03 2023-03-28 昆山晟成光电科技有限公司 一种钙钛矿薄膜产线化退火结晶设备以及方法

Citations (4)

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KR20120014929A (ko) * 2009-05-21 2012-02-20 에스톨, 인코포레이티드 조성-개질형 바륨티타네이트 분말을 이용하여 세라믹/플라스틱 캐패시터를 제조하기 위한 초소형-압출 다중적층 기법
KR20140082870A (ko) * 2012-12-22 2014-07-03 주식회사 포스코 레이저빔의 반사를 이용한 cigs 광흡수층의 제조방법
US20170152608A1 (en) * 2015-11-30 2017-06-01 Wisconsin Alumni Research Foundation Solution growth of single-crystal perovskite structures
KR20180083889A (ko) * 2015-11-12 2018-07-23 광저우 차이나레이 옵토일렉트로닉 머티리얼즈 엘티디. 인쇄전자용 조성물 및 전자 장치에서 이의 용도

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KR20140082870A (ko) * 2012-12-22 2014-07-03 주식회사 포스코 레이저빔의 반사를 이용한 cigs 광흡수층의 제조방법
KR20180083889A (ko) * 2015-11-12 2018-07-23 광저우 차이나레이 옵토일렉트로닉 머티리얼즈 엘티디. 인쇄전자용 조성물 및 전자 장치에서 이의 용도
US20170152608A1 (en) * 2015-11-30 2017-06-01 Wisconsin Alumni Research Foundation Solution growth of single-crystal perovskite structures

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KR20210026587A (ko) 2021-03-10
KR102304347B1 (ko) 2021-09-23
WO2021040442A2 (ko) 2021-03-04

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