WO2021040111A1 - Appareil et procédé de collecte de diodes électroluminescentes à semi-conducteur - Google Patents

Appareil et procédé de collecte de diodes électroluminescentes à semi-conducteur Download PDF

Info

Publication number
WO2021040111A1
WO2021040111A1 PCT/KR2019/011283 KR2019011283W WO2021040111A1 WO 2021040111 A1 WO2021040111 A1 WO 2021040111A1 KR 2019011283 W KR2019011283 W KR 2019011283W WO 2021040111 A1 WO2021040111 A1 WO 2021040111A1
Authority
WO
WIPO (PCT)
Prior art keywords
electromagnet
light emitting
semiconductor light
emitting devices
fluid chamber
Prior art date
Application number
PCT/KR2019/011283
Other languages
English (en)
Korean (ko)
Inventor
양두환
김도희
신용일
심봉주
Original Assignee
엘지전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지전자 주식회사 filed Critical 엘지전자 주식회사
Priority to EP19943515.7A priority Critical patent/EP4024440A4/fr
Priority to US17/638,163 priority patent/US20220367423A1/en
Publication of WO2021040111A1 publication Critical patent/WO2021040111A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67709—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations using magnetic elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Definitions

  • the present invention relates to a semiconductor light emitting device collecting device for collecting remaining semiconductor light emitting devices after assembling the semiconductor light emitting device, and a semiconductor light emitting device collecting method using the same in manufacturing a display device using a semiconductor light emitting device having a size of several to tens of ⁇ m.
  • LCDs liquid crystal displays
  • OLED organic light-emitting device
  • micro LED displays are competing in the field of display technology to implement large-area displays.
  • micro LED semiconductor light emitting device having a diameter or cross-sectional area of 100 ⁇ m or less
  • the display does not absorb light using a polarizing plate or the like, very high efficiency can be provided.
  • a large display requires millions of semiconductor light emitting devices, it is difficult to transfer devices compared to other technologies.
  • the self-assembly method is a method in which the semiconductor light emitting device locates itself in a fluid, and is the most advantageous method for realizing a large-screen display device.
  • An object of the present invention is to provide a semiconductor light emitting device collection device capable of efficiently collecting semiconductor light emitting devices remaining in a chamber after self-assembly by forming a magnetic field on the surface of an electromagnet, and a semiconductor light emitting device collection method using the same.
  • an apparatus for collecting semiconductor light emitting devices includes: an electromagnet unit disposed in a fluid chamber into which semiconductor light emitting devices including a magnetic material are inserted to form a magnetic field when power is applied; A power supply unit connected to the electromagnet unit and applying power to the electromagnet unit; And a driving part for moving the electromagnet part in a width direction, a length direction, and a height direction of the fluid chamber, wherein the electromagnet part guides the semiconductor light emitting devices to a surface on which a magnetic field is formed when power is applied.
  • the electromagnet unit includes: a first electromagnet disposed adjacent to the bottom surface of the fluid chamber; And a second electromagnet that is spaced apart from the first electromagnet by a predetermined interval in an arbitrary direction, wherein the first electromagnet and the second electromagnet operate independently.
  • the first electromagnet and the second electromagnet are characterized in that they extend in one direction.
  • a distance between the first electromagnet and the second electromagnet is varied by the driving unit.
  • the second electromagnet is characterized in that it is spaced apart from the first electromagnet by a predetermined interval upward from the first electromagnet.
  • the driving unit includes the first electromagnet and the second electromagnet with an extension direction of the first electromagnet and the second electromagnet as an axis so that the positions of the first electromagnet and the second electromagnet change from each other. It is characterized by rotating the electromagnet.
  • the driving unit is characterized in that the electromagnet rotates about the width or length direction of the fluid chamber as an axis.
  • the method for collecting semiconductor light emitting devices is performed after mounting the semiconductor light emitting devices inserted in the fluid chamber on the assembly substrate using an electric field and a magnetic field, and an electromagnet that forms a magnetic field when power is applied is applied to the fluid. Placing it to be immersed in the fluid in the chamber; Applying power to the electromagnet; Guiding the semiconductor light emitting devices remaining in the fluid chamber to the surface of the electromagnet while moving the electromagnet part in the width direction or the length direction of the fluid chamber; And cutting off power applied to the electromagnet to collect the semiconductor light emitting devices guided to the surface of the electromagnet.
  • the electromagnet part is moved while rotating about the width or length direction of the fluid chamber.
  • the electromagnet unit includes: a first electromagnet disposed adjacent to the bottom surface of the fluid chamber; And a second electromagnet that is spaced apart from the first electromagnet by a predetermined interval in an arbitrary direction, wherein the first electromagnet and the second electromagnet operate independently.
  • the second electromagnet is characterized in that it is spaced apart from the first electromagnet by a predetermined interval upward from the first electromagnet.
  • the first electromagnet collects semiconductor light emitting devices that have sunk on the bottom surface of the fluid chamber
  • the second electromagnet collects semiconductor light emitting devices floating in the fluid chamber
  • the collecting of the semiconductor light emitting devices guided to the surface of the electromagnet may include blocking power applied to the first electromagnet to collect the semiconductor light emitting devices guided to the surface of the first electromagnet. step; Changing positions of the first electromagnet and the second electromagnet to each other; And cutting off power applied to the second electromagnet to collect the semiconductor light emitting devices guided to the surface of the second electromagnet.
  • the semiconductor light emitting device collection device can be expected to improve production efficiency by collecting semiconductor light emitting devices remaining in the fluid chamber after self-assembly using an electromagnet, and to reduce material cost through reuse of semiconductor light emitting devices. have. In addition, it is easy to apply to self-assembly devices currently in use, and since an electromagnet is used, there is an advantage that it is possible to collect semiconductor light emitting devices without damaging them.
  • FIG. 1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device of the present invention.
  • FIG. 2 is a partially enlarged view of portion A of the display device of FIG. 1.
  • FIG. 3 is an enlarged view of the semiconductor light emitting device of FIG. 2.
  • FIG. 4 is an enlarged view showing another embodiment of the semiconductor light emitting device of FIG. 2.
  • 5A to 5E are conceptual diagrams for explaining a new process of manufacturing the above-described semiconductor light emitting device.
  • FIG. 6 is a conceptual diagram showing an example of a self-assembly device of a semiconductor light emitting device according to the present invention.
  • FIG. 7 is a block diagram of the self-assembly device of FIG. 6.
  • 8A to 8E are conceptual diagrams illustrating a process of self-assembling a semiconductor light emitting device using the self-assembly device of FIG. 6.
  • FIGS. 8A to 8E are conceptual diagram illustrating the semiconductor light emitting device of FIGS. 8A to 8E.
  • FIG. 10 is a diagram showing the configuration of a semiconductor light emitting device collection device according to the present invention.
  • FIG. 11 is a view showing a collection device according to an embodiment of the present invention.
  • FIGS. 12A and 12B are diagrams illustrating a collection device (electromagnet unit composed of a plurality of electromagnets) according to another embodiment of the present invention.
  • FIG. 13 is a diagram illustrating a process of collecting semiconductor light emitting devices collected on a surface of an electromagnet using a collection device according to another embodiment of the present invention.
  • Display devices described herein include a mobile phone, a smart phone, a laptop computer, a digital broadcasting terminal, a personal digital assistant (PDA), a portable multimedia player (PMP), a navigation system, and a slate PC.
  • PDA personal digital assistant
  • PMP portable multimedia player
  • slate PC slate PC
  • tablet PC tablet PC
  • ultra book ultra book
  • digital TV digital TV
  • desktop computer desktop computer
  • the configuration according to the embodiment described in the present specification may be applied even if a new product type to be developed later can include a display.
  • FIG. 1 is a conceptual diagram showing an embodiment of a display device using a semiconductor light emitting device of the present invention
  • FIG. 2 is a partial enlarged view of part A of the display device of FIG. 1
  • FIG. 3 is an enlarged view of the semiconductor light emitting device of FIG.
  • FIG. 4 is an enlarged view showing another embodiment of the semiconductor light emitting device of FIG. 2.
  • information processed by the controller of the display device 100 may be output from the display module 140.
  • a case 101 in a closed loop shape surrounding an edge of the display module may form a bezel of the display device.
  • the display module 140 includes a panel 141 on which an image is displayed, and the panel 141 includes a micro-sized semiconductor light emitting device 150 and a wiring board 110 on which the semiconductor light emitting device 150 is mounted. It can be provided.
  • a wiring is formed on the wiring board 110 to be connected to the n-type electrode 152 and the p-type electrode 156 of the semiconductor light emitting device 150.
  • the semiconductor light emitting device 150 may be provided on the wiring board 110 as an individual pixel that emits light.
  • the image displayed on the panel 141 is visual information, and is implemented by independently controlling light emission of sub-pixels arranged in a matrix form through the wiring.
  • a micro LED Light Emitting Diode
  • the micro LED may be a light emitting diode formed in a small size of 100 microns or less.
  • blue, red, and green are respectively provided in the emission region, and a unit pixel may be implemented by a combination thereof. That is, the unit pixel means a minimum unit for implementing one color, and at least three micro LEDs may be provided in the unit pixel.
  • the semiconductor light emitting device 150 may have a vertical structure.
  • the semiconductor light emitting device 150 is mainly made of gallium nitride (GaN), and indium (In) and/or aluminum (Al) are added together to be implemented as a high-power light emitting device that emits various light including blue. Can be.
  • GaN gallium nitride
  • Al aluminum
  • Such a vertical semiconductor light emitting device includes a p-type electrode 156, a p-type semiconductor layer 155 formed on the p-type electrode 156, an active layer 154 formed on the p-type semiconductor layer 155, and an active layer 154. And an n-type semiconductor layer 153 formed thereon, and an n-type electrode 152 formed on the n-type semiconductor layer 153.
  • the p-type electrode 156 located at the bottom may be electrically connected to the p electrode of the wiring board
  • the n-type electrode 152 located at the top may be electrically connected to the n electrode at the top of the semiconductor light emitting device.
  • the vertical semiconductor light emitting device 150 has a great advantage of reducing a chip size because electrodes can be arranged up and down.
  • the semiconductor light emitting device may be a flip chip type light emitting device.
  • the semiconductor light emitting device 250 includes a p-type electrode 256, a p-type semiconductor layer 255 on which the p-type electrode 256 is formed, and an active layer 254 formed on the p-type semiconductor layer 255 , An n-type semiconductor layer 253 formed on the active layer 254, and an n-type electrode 252 disposed horizontally apart from the p-type electrode 256 on the n-type semiconductor layer 253.
  • both the p-type electrode 256 and the n-type electrode 152 may be electrically connected to the p-electrode and the n-electrode of the wiring board under the semiconductor light emitting device.
  • Each of the vertical semiconductor light emitting device and the horizontal semiconductor light emitting device may be a green semiconductor light emitting device, a blue semiconductor light emitting device, or a red semiconductor light emitting device.
  • gallium nitride GaN
  • indium (In) and/or aluminum (Al) are added together to embody green or blue light.
  • the semiconductor light emitting device may be a gallium nitride thin film formed in various layers such as n-Gan, p-Gan, AlGaN, InGan, and specifically, the p-type semiconductor layer is P-type GaN, and the n The type semiconductor layer may be N-type GaN.
  • the p-type semiconductor layer may be P-type GaAs
  • the n-type semiconductor layer may be N-type GaAs.
  • the p-type semiconductor layer may be P-type GaN doped with Mg at the p-electrode side
  • the n-type semiconductor layer may be N-type GaN doped with Si at the n-electrode side.
  • the above-described semiconductor light emitting devices may be semiconductor light emitting devices without an active layer.
  • unit pixels that emit light may be arranged in a high-definition manner in the display panel, thereby implementing a high-definition display device.
  • a semiconductor light emitting device grown on a wafer and formed through mesa and isolation is used as an individual pixel.
  • the micro-sized semiconductor light emitting device 150 must be transferred to a wafer to a predetermined position on the substrate of the display panel. There is pick and place as such transfer technology, but the success rate is low and very long time is required.
  • there is a technique of transferring several elements at once using a stamp or a roll but there is a limit to the yield, so it is not suitable for a large screen display.
  • a new manufacturing method and manufacturing apparatus for a display device capable of solving this problem are proposed.
  • 5A to 5E are conceptual diagrams for explaining a new process of manufacturing the above-described semiconductor light emitting device.
  • a display device using a passive matrix (PM) type semiconductor light emitting device is exemplified.
  • PM passive matrix
  • AM active matrix
  • a method of self-assembling a horizontal type semiconductor light emitting device is illustrated, but this is applicable to a method of self-assembling a vertical type semiconductor light emitting device.
  • a first conductive type semiconductor layer 153, an active layer 154, and a second conductive type semiconductor layer 155 are respectively grown on the growth substrate 159 (FIG. 5A).
  • the first conductive type semiconductor layer 153 When the first conductive type semiconductor layer 153 is grown, next, an active layer 154 is grown on the first conductive type semiconductor layer 153, and then a second conductive type semiconductor is formed on the active layer 154.
  • the layer 155 is grown. In this way, when the first conductive type semiconductor layer 153, the active layer 154, and the second conductive type semiconductor layer 155 are sequentially grown, as shown in FIG. 5A, the first conductive type semiconductor layer 153 , The active layer 154 and the second conductive semiconductor layer 155 form a stacked structure.
  • the first conductive type semiconductor layer 153 may be a p-type semiconductor layer
  • the second conductive type semiconductor layer 155 may be an n-type semiconductor layer.
  • the present invention is not necessarily limited thereto, and an example in which the first conductivity type is n-type and the second conductivity type is p-type is also possible.
  • the present embodiment illustrates a case in which the active layer is present, as described above, a structure without the active layer may be possible depending on the case.
  • the p-type semiconductor layer may be P-type GaN doped with Mg
  • the n-type semiconductor layer may be N-type GaN doped with Si on the n-electrode side.
  • the growth substrate 159 may be formed of a material having a light-transmitting property, for example, any one of sapphire (Al2O3), GaN, ZnO, and AlO, but is not limited thereto.
  • the growth substrate 1059 may be formed of a material suitable for growth of semiconductor materials or a carrier wafer. It can be formed of a material having excellent thermal conductivity, including a conductive substrate or an insulating substrate, for example, a SiC substrate having a higher thermal conductivity than a sapphire (Al2O3) substrate, or at least one of Si, GaAs, GaP, InP, and Ga2O3. Can be used.
  • isolation is performed so that a plurality of light emitting devices form a light emitting device array. That is, the first conductive type semiconductor layer 153, the active layer 154, and the second conductive type semiconductor layer 155 are vertically etched to form a plurality of semiconductor light emitting devices.
  • the active layer 154 and the second conductive type semiconductor layer 155 are partially removed in the vertical direction, so that the first conductive type semiconductor layer 153 goes to the outside.
  • the exposed mesa process and the isolation of forming a plurality of semiconductor light emitting device arrays by etching the first conductive type semiconductor layer thereafter may be performed.
  • a second conductive type electrode 156 (or a p-type electrode) is formed on one surface of the second conductive type semiconductor layer 155 (FIG. 5C).
  • the second conductive electrode 156 may be formed by a deposition method such as sputtering, but the present invention is not limited thereto.
  • the first conductive semiconductor layer and the second conductive semiconductor layer are an n-type semiconductor layer and a p-type semiconductor layer, respectively, the second conductive type electrode 156 may be an n-type electrode.
  • the growth substrate 159 is removed to provide a plurality of semiconductor light emitting devices.
  • the growth substrate 1059 may be removed using a laser lift-off method (LLO) or a chemical lift-off method (CLO) (FIG. 5D).
  • LLO laser lift-off method
  • CLO chemical lift-off method
  • the semiconductor light emitting devices 150 and a substrate are placed in a chamber filled with a fluid, and the semiconductor light emitting devices are self-assembled to the substrate 1061 using flow, gravity, and surface tension.
  • the substrate may be an assembled substrate 161.
  • the substrate may be a wiring substrate.
  • the present invention illustrates that the substrate is provided as the assembly substrate 161 and the semiconductor light emitting devices 1050 are mounted thereon.
  • Cells into which the semiconductor light emitting devices 150 are inserted may be provided on the assembly substrate 161 to facilitate mounting of the semiconductor light emitting devices 150 on the assembly substrate 161. Specifically, cells in which the semiconductor light emitting devices 150 are mounted are formed on the assembly substrate 161 at a position where the semiconductor light emitting devices 150 are aligned with a wiring electrode. The semiconductor light emitting devices 150 are assembled in the cells while moving in the fluid.
  • the assembled substrate 161 After a plurality of semiconductor light emitting elements are arrayed on the assembled substrate 161, when the semiconductor light emitting elements of the assembled substrate 161 are transferred to a wiring board, a large area can be transferred. Accordingly, the assembled substrate 161 may be referred to as a temporary substrate.
  • the present invention proposes a method and apparatus for minimizing the influence of gravity or friction and preventing non-specific binding in order to increase the transfer yield.
  • a magnetic material is disposed on the semiconductor light emitting device to move the semiconductor light emitting device using magnetic force, and the semiconductor light emitting device is seated at a predetermined position using an electric field during the moving process.
  • FIGS. 8A to 8D are conceptual diagrams illustrating a process of self-assembling a semiconductor light emitting device using the self-assembly device of FIG. 6, and FIG. 9 is a conceptual diagram illustrating the semiconductor light emitting device of FIGS. 8A to 8D.
  • the self-assembly device 160 of the present invention may include a fluid chamber 162, a magnet 163, and a position control unit 164.
  • the fluid chamber 162 has a space for accommodating a plurality of semiconductor light emitting devices.
  • the space may be filled with a fluid, and the fluid may contain water or the like as an assembly solution.
  • the fluid chamber 162 may be a water tank, and may be configured in an open type.
  • the present invention is not limited thereto, and the fluid chamber 162 may be a closed type in which the space is a closed space.
  • a substrate 161 may be disposed such that an assembly surface on which the semiconductor light emitting devices 150 are assembled faces downward.
  • the substrate 161 is transferred to an assembly position by a transfer unit, and the transfer unit may include a stage 165 on which the substrate is mounted.
  • the stage 165 is positioned by a control unit, through which the substrate 161 may be transferred to the assembly position.
  • the assembly surface of the substrate 161 faces the bottom of the fluid chamber 150 at the assembly position. As illustrated, the assembly surface of the substrate 161 is disposed to be immersed in the fluid in the fluid chamber 162. Accordingly, the semiconductor light emitting device 150 moves to the assembly surface in the fluid.
  • the substrate 161 is an assembled substrate capable of forming an electric field, and may include a base portion 161a, a dielectric layer 161b, and a plurality of electrodes 161c.
  • the base portion 161a is made of an insulating material, and the plurality of electrodes 161c may be a thin film or thick bi-planar electrode patterned on one surface of the base portion 161a.
  • the electrode 161c may be formed of, for example, a stack of Ti/Cu/Ti, Ag paste, and ITO.
  • the dielectric layer 161b may be made of an inorganic material such as SiO2, SiNx, SiON, Al2O3, TiO2, and HfO2. Alternatively, the dielectric layer 161b may be formed of a single layer or a multilayer as an organic insulator. The dielectric layer 161b may have a thickness of several tens of nm to several ⁇ m.
  • the substrate 161 according to the present invention includes a plurality of cells 161d partitioned by a partition wall.
  • the cells 161d are sequentially disposed in one direction, and may be made of a polymer material.
  • the partition wall 161e constituting the cells 161d is made to be shared with the neighboring cells 161d.
  • the partition wall 161e protrudes from the base portion 161a, and the cells 161d may be sequentially disposed in one direction by the partition wall 161e. More specifically, the cells 161d are sequentially arranged in column and row directions, respectively, and may have a matrix structure.
  • a groove for accommodating the semiconductor light emitting device 150 may be provided, and the groove may be a space defined by the partition wall 161e.
  • the shape of the groove may be the same or similar to the shape of the semiconductor light emitting device. For example, when the semiconductor light emitting device has a square shape, the groove may have a square shape. Further, although not shown, when the semiconductor light emitting device is circular, grooves formed inside the cells may be circular. Furthermore, each of the cells is made to accommodate a single semiconductor light emitting device. That is, one semiconductor light emitting device is accommodated in one cell.
  • the plurality of electrodes 161c may include a plurality of electrode lines disposed on the bottom of each of the cells 161d, and the plurality of electrode lines may extend to neighboring cells.
  • the plurality of electrodes 161c are disposed under the cells 161d, and different polarities are respectively applied to generate an electric field in the cells 161d.
  • the dielectric layer may form the bottom of the cells 161d while the dielectric layer covers the plurality of electrodes 161c.
  • the electrodes of the substrate 161 are electrically connected to the power supply unit 171.
  • the power supply unit 171 performs a function of generating the electric field by applying power to the plurality of electrodes.
  • the self-assembly device may include a magnet 163 for applying magnetic force to the semiconductor light emitting devices.
  • the magnet 163 is disposed to be spaced apart from the fluid chamber 162 to apply a magnetic force to the semiconductor light emitting devices 150.
  • the magnet 163 may be disposed to face the opposite surface of the assembly surface of the substrate 161, and the position of the magnet is controlled by a position control unit 164 connected to the magnet 163.
  • the semiconductor light emitting device 1050 may include a magnetic material to move in the fluid by the magnetic field of the magnet 163.
  • a semiconductor light emitting device including a magnetic material includes a first conductive type electrode 1052 and a second conductive type electrode 1056, and a first conductive type semiconductor layer on which the first conductive type electrode 1052 is disposed. (1053), a second conductive type semiconductor layer 1055 overlapping with the first conductive type semiconductor layer 1052 and on which the second conductive type electrode 1056 is disposed, and the first and second conductive type semiconductors An active layer 1054 disposed between the layers 1053 and 1055 may be included.
  • the first conductivity type is p-type
  • the second conductivity type may be n-type, and vice versa.
  • it may be a semiconductor light emitting device without the active layer.
  • the first conductive type electrode 1052 may be generated after the semiconductor light emitting device is assembled to the wiring board by self-assembly of the semiconductor light emitting device.
  • the second conductive type electrode 1056 may include the magnetic material.
  • the magnetic material may mean a metal exhibiting magnetism.
  • the magnetic material may be Ni, SmCo, or the like, and as another example, may include a material corresponding to at least one of Gd-based, La-based, and Mn-based.
  • the magnetic material may be provided on the second conductive electrode 1056 in the form of particles.
  • one layer of the conductive type electrode may be formed of a magnetic material.
  • the second conductive type electrode 1056 of the semiconductor light emitting device 1050 may include a first layer 1056a and a second layer 1056b.
  • the first layer 1056a may be formed to include a magnetic material
  • the second layer 1056b may include a metal material other than a magnetic material.
  • the first layer 1056a including a magnetic material may be disposed to contact the second conductivity type semiconductor layer 1055.
  • the first layer 1056a is disposed between the second layer 1056b and the second conductive semiconductor layer 1055.
  • the second layer 1056b may be a contact metal connected to the second electrode of the wiring board.
  • the present invention is not necessarily limited thereto, and the magnetic material may be disposed on one surface of the first conductive type semiconductor layer.
  • the self-assembly device includes a magnetic handler that can be automatically or manually moved in the x, y, z axis on the top of the fluid chamber, or the magnet 163 It may be provided with a motor capable of rotating.
  • the magnet handler and the motor may constitute the position control unit 164. Through this, the magnet 163 rotates in a horizontal direction, a clockwise direction, or a counterclockwise direction with the substrate 161.
  • a light-transmitting bottom plate 166 is formed in the fluid chamber 162, and the semiconductor light emitting devices may be disposed between the bottom plate 166 and the substrate 161.
  • the image sensor 167 may be disposed to face the bottom plate 166 so as to monitor the inside of the fluid chamber 162 through the bottom plate 166.
  • the image sensor 167 is controlled by the control unit 172 and may include an inverted type lens and a CCD so that the assembly surface of the substrate 161 can be observed.
  • the self-assembly device described above is made to use a combination of a magnetic field and an electric field, and if this is used, the semiconductor light emitting devices are seated at a predetermined position on the substrate by the electric field in the process of moving by the position change of the magnet. I can.
  • the assembly process using the self-assembly device described above will be described in more detail.
  • a plurality of semiconductor light emitting devices 1050 including magnetic materials are formed through the process described in FIGS. 5A to 5C.
  • a magnetic material may be deposited on the semiconductor light emitting device.
  • the substrate 161 is transferred to the assembly position, and the semiconductor light emitting devices 1050 are put into the fluid chamber 162 (FIG. 8A).
  • the assembly position of the substrate 161 may be a position disposed in the fluid chamber 162 such that the assembly surface on which the semiconductor light emitting devices 1050 of the substrate 161 are assembled faces downward. I can.
  • some of the semiconductor light emitting devices 1050 may sink to the bottom of the fluid chamber 162 and some may float in the fluid.
  • some of the semiconductor light emitting devices 1050 may sink to the bottom plate 166.
  • the semiconductor light emitting devices 1050 rise in the fluid toward the substrate 161.
  • the original position may be a position away from the fluid chamber 162.
  • the magnet 163 may be composed of an electromagnet. In this case, electricity is supplied to the electromagnet to generate an initial magnetic force.
  • a separation distance between the assembly surface of the substrate 161 and the semiconductor light emitting devices 1050 may be controlled.
  • the separation distance is controlled using the weight, buoyancy, and magnetic force of the semiconductor light emitting devices 1050.
  • the separation distance may be several millimeters to tens of micrometers from the outermost surface of the substrate.
  • magnetic force is applied to the semiconductor light emitting devices 1050 so that the semiconductor light emitting devices 1050 move in one direction within the fluid chamber 162.
  • the magnet 163 is moved in a direction horizontal to the substrate, in a clockwise direction, or in a counterclockwise direction (FIG. 8C).
  • the semiconductor light emitting devices 1050 move in a direction horizontal to the substrate 161 at a position spaced apart from the substrate 161 by the magnetic force.
  • the semiconductor light emitting devices 1050 are moving in a direction horizontal to the substrate 161, they are moved in a direction perpendicular to the substrate 161 by the electric field. It is seated in the set position.
  • the semiconductor light emitting devices 1050 are self-assembled to the assembly position of the substrate 161.
  • cells to which the semiconductor light emitting devices 1050 are inserted may be provided on the substrate 161.
  • a post-process for implementing a display device may be performed by transferring the arranged semiconductor light emitting devices to a wiring board as described above.
  • the magnets so that the semiconductor light emitting devices 1050 remaining in the fluid chamber 162 fall to the bottom of the fluid chamber 162.
  • the 163 may be moved in a direction away from the substrate 161 (FIG. 8D).
  • the semiconductor light emitting devices 1050 remaining in the fluid chamber 162 fall to the bottom of the fluid chamber 162.
  • the recovered semiconductor light emitting devices 1050 can be reused.
  • the self-assembly device and method described above focuses distant parts near a predetermined assembly site using a magnetic field to increase assembly yield in a fluidic assembly, and applies a separate electric field to the assembly site to selectively select parts only at the assembly site. Let it be assembled. At this time, the assembly board is placed on the top of the water tank and the assembly surface faces down, minimizing the effect of gravity caused by the weight of the parts, and preventing non-specific binding to eliminate defects. That is, in order to increase the transfer yield, the assembly substrate is placed on the top to minimize the effect of gravity or friction, and to prevent non-specific binding.
  • the present invention it is possible to pixelate a semiconductor light emitting device in a large amount on a small-sized wafer and then transfer it to a large-area substrate. Through this, it is possible to manufacture a large-area display device at low cost.
  • the present invention relates to an apparatus for collecting semiconductor light emitting devices and a method for collecting semiconductor light emitting devices using the same.
  • exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
  • FIG. 10 is a diagram showing the configuration of a semiconductor light emitting device collection apparatus according to the present invention
  • FIG. 11 is a diagram showing a collection apparatus according to an embodiment of the present invention
  • FIGS. 12A and 12B are Is a diagram showing a collection device (electromagnet unit composed of a plurality of electromagnets) according to the present invention
  • FIG. 13 is a view showing a process of collecting semiconductor light emitting elements collected on the surface of an electromagnet using a collection device according to another embodiment of the present invention to be.
  • the semiconductor light emitting device collection apparatus 300 may include an electromagnet part 310, a power supply part 320 and a driving part 330, and the power supply part 320 and the driving part 330 may include an electromagnet part 310 It may be a configuration for operating.
  • the electromagnet part 310 may be disposed in the fluid chamber 162 into which the semiconductor light emitting devices 1050 including magnetic materials are injected.
  • the degree of immersion of the electromagnet part 310 is determined according to the level of the fluid contained in the fluid chamber 162 (eg, DI water), and may be disposed in the fluid chamber 162 accordingly.
  • the amount of fluid contained in the chamber 162 may be determined in consideration of the arrangement of the electromagnet part 310 for the collection process of the semiconductor light emitting devices 1050.
  • the electromagnet unit 310 may include one or more electromagnets formed of a magnetic material forming a magnetic field when power is applied and a coil surrounding the magnetic material, thereby forming a magnetic field when power is applied.
  • the electromagnet unit 310 may include one or more electromagnets formed of a magnetic material forming a magnetic field when power is applied and a coil surrounding the magnetic material, thereby forming a magnetic field when power is applied.
  • the power supply unit 320 may be connected to the electromagnet unit 310 to apply power to the electromagnet unit 310.
  • the power supply unit 320 may be connected to the coil of the electromagnet unit 310 on both sides of the electromagnet unit 310 to supply current, and a magnetic field may be formed around the coil surrounding the magnetic material by the flow of current. . In this case, the influence of the magnetic field may extend to the surface of the electromagnet part 310.
  • the driving unit 330 may move the electromagnet unit 310 in the width direction, the length direction, and the height direction of the fluid chamber 162.
  • the width direction, length direction, and height direction of the fluid chamber 162 may mean x (or y), y (or x), and z-axis directions, respectively.
  • the driving unit 330 may move the electromagnet unit 310 in a state in which power is applied. That is, while the electromagnet part 310 moves in the fluid chamber 162 by the driving part 330 in a state in which a magnetic field is formed on the surface, the remaining semiconductor light emitting devices 1050 may be guided to the surface.
  • the driving unit 330 may move the electromagnet unit 310 while rotating.
  • the driving unit 330 may set the electromagnet unit 310 in the width or length direction of the fluid chamber 162 (in detail, in a direction substantially parallel to the width or length direction of the fluid chamber 162). Can be rotated.
  • the electromagnet part 310 is moved while rotating, the collection efficiency of the semiconductor light emitting devices 1050 may be increased.
  • the driving unit 330 may adjust the distance between the plurality of electromagnets.
  • the electromagnet unit 310 may include a plurality of electromagnets that operate independently.
  • the electromagnet part 310 is a first electromagnet 311 disposed adjacent to the bottom side of the fluid chamber 162 and a second electromagnet 311 disposed spaced apart from the first electromagnet 311 by a predetermined distance in an arbitrary direction.
  • An electromagnet 312 may be included, and the first electromagnet 311 and the second electromagnet 312 may operate independently. In other words, power may be independently applied to the first electromagnet 311 and the second electromagnet 312, and may rotate and move in the same or different directions.
  • the first electromagnet 311 and the second electromagnet 312 are spaced apart in the height direction of the fluid chamber 162, or are spaced apart in the length direction (or width direction) of the fluid chamber 162 Can be. That is, at least one of the plurality of electromagnets constituting the electromagnet part 310 may be disposed adjacent to the bottom side of the fluid chamber 162 in which the remaining semiconductor light emitting devices 1050 most exist.
  • the second electromagnet 312 is disposed upward from the first electromagnet 311 by a predetermined interval.
  • a plurality of electromagnets constituting the electromagnet part 310 may have a shape extending in one direction.
  • one direction may mean a width or length direction of the fluid chamber 162.
  • the distance between the first electromagnet 311 and the second electromagnet 312 may be varied by the driving unit 330. Specifically, the distance between the first electromagnet 311 and the second electromagnet 312 may be changed according to the arrangement relationship between the first electromagnet 311 and the second electromagnet 312, or the semiconductor light emitting device 1050 It can be changed in the process of collecting the hear.
  • the first electromagnet 311 and the second electromagnet 312 are arranged vertically (FIG. 12A) and horizontally (FIG. 12B ). It can be confirmed that it has.
  • the collection process may be performed while maintaining the gap between the first electromagnet 311 and the second electromagnet 312. That is, the first electromagnet 311 and the second electromagnet 312 may collect the semiconductor light emitting devices 1050 remaining in the fluid chamber 162 while moving together in the same direction and speed.
  • the first electromagnet 311 and the second electromagnet 312 may be disposed at intervals of the width or length of the fluid chamber 162, and the collection process moves in the direction of narrowing the distance between each other. Can proceed.
  • the semiconductor light emitting devices 1050 collected on the surface of the electromagnet 310 through the collection process may be separated from the surface of the electromagnet 310 as power supply to the electromagnet 310 is stopped.
  • the electromagnet unit 310 including the first electromagnet 311 and the second electromagnet 312 power supply may be sequentially stopped, and thus the semiconductor light emitting device collected in the first electromagnet 311 ( After the collection of the 1050s, the semiconductor light emitting device 1050 collected in the second electromagnet 312 may be collected.
  • the semiconductor light emitting devices 1050 collected in the electromagnet part 310 may be collected on the tray 170 supplying the semiconductor light emitting devices 1050 inside the fluid chamber 162. For example, power supply is stopped after the electromagnet part 310 moves to the top of the tray 170, and the collected semiconductor light emitting device 1050 may be collected on one surface of the tray 170.
  • the driving unit 330 changes the positions of the first electromagnet 311 and the second electromagnet 312 to each other.
  • the first electromagnet 311 and the second electromagnet 312 may be rotated by 180° with the extension directions of the first electromagnet 311 and the second electromagnet 312 as an axis.
  • the semiconductor light emitting devices 1050 collected on the surface of the first electromagnet 311 disposed under the tray 170 may be collected. Accordingly, it is possible to accurately and conveniently collect the semiconductor light emitting devices 1050 collected on the surface of the electromagnet part 310.
  • the semiconductors collected in each order without changing the position between the first electromagnet 311 and the second electromagnet 312 The light emitting devices 1050 may be collected.
  • the first electromagnet 311 is disposed on the tray 170 to collect the semiconductor light emitting devices 1050 collected on the surface of the first electromagnet 311, and then the second electromagnet 312 is placed in the tray. (170) After placing it on the top, the same process can be repeated.
  • the gap between the electromagnet part 310 and the tray 170 can be minimized to prevent separation and diffusion of the semiconductor light emitting devices 1050. have.
  • the above-described semiconductor light emitting device collection device 300 is easy to apply to the self-assembly device according to FIGS. 6 to 8 in the fluid chamber 162, and does not damage the semiconductor light emitting devices 1050 because it uses an electromagnet. There is an advantage that it can be collected without.
  • the semiconductor light emitting device collection method relates to a collection process corresponding to a post-process of self-assembly, and the semiconductor light emitting devices 1050 injected into the fluid chamber 162 using an electric field and a magnetic field are placed on an assembly substrate 161. It can be performed after settling.
  • an electromagnet part 310 capable of forming a magnetic field when power is applied is provided in a fluid chamber ( 162) The step of placing so as to be immersed in the inner fluid may be performed.
  • the electromagnet part 310 may be disposed to be adjacent to the bottom surface of the fluid chamber 162, and a specific degree of immersion may be determined according to the level of the fluid contained in the fluid chamber 162.
  • the electromagnet unit 310 may be formed of one electromagnet or a plurality of electromagnets.
  • the electromagnet part 310 is a first electromagnet 311 disposed adjacent to the bottom side of the fluid chamber 162 and a second electromagnet 311 disposed spaced apart from the first electromagnet 311 by a predetermined interval in an arbitrary direction. It may be made of an electromagnet 312, and the first electromagnet 311 and the second electromagnet 312 may operate independently.
  • the second electromagnet 312 may be disposed upwardly from the first electromagnet 311 by a predetermined interval.
  • the first electromagnet 311 includes the semiconductor light emitting devices 1050 sunk on the bottom surface of the fluid chamber 162, and the second electromagnet 312 is the semiconductor light emitting device 1050 floating in the fluid chamber 162. It may be for collecting hear.
  • the electromagnet part 310 may be connected to a power supply to receive power, and a magnetic field may be formed on the surface when power is applied.
  • the electromagnet part 310 is made of the first electromagnet 311 and the second electromagnet 312, the first electromagnet 311 and the second electromagnet 312 are respectively connected to different power sources so that power can be independently applied. have.
  • the step of guiding the semiconductor light emitting devices 1050 remaining in the fluid chamber 162 to the surface of the electromagnet part 310 Can be done.
  • the semiconductor light emitting devices 1050 used for self-assembly according to the present invention include a magnetic material, as power is applied to the electromagnet part 310, it is guided to the surface where the magnetic field is formed and can move together with the electromagnet part 310. .
  • the electromagnet part 310 may have a shape extending in either the width or length direction of the fluid chamber 162, and in this case, the electromagnet part 310 moves in the length or width direction,
  • the semiconductor light emitting devices 1050 in the chamber 162 may be collected.
  • the electromagnet part 310 extending in the width direction of the fluid chamber 162 may collect the semiconductor light emitting devices 1050 while moving in the length direction of the fluid chamber 162, and the fluid chamber 162
  • the electromagnet part 310 extending in the length direction of may collect the semiconductor light emitting devices 1050 while moving in the width direction of the fluid chamber 162. According to this driving method, it is possible to efficiently collect the semiconductor light emitting devices 1050 remaining in the fluid chamber 162 while minimizing the movement path of the electromagnet unit 310.
  • the electromagnet part 310 may be moved while rotating about the width or length direction of the fluid chamber 162 as an axis.
  • the first electromagnet 311 and the second electromagnet 312 may be independently driven.
  • the first electromagnet 311 and the second electromagnet 312 may move in the same direction according to an arrangement relationship or may collect the semiconductor light emitting devices 1050 while moving in different directions.
  • the semiconductor light emitting devices 1050 may be collected while each electromagnet moves in the same direction.
  • the step of collecting the semiconductor light emitting devices 1050 induced on the surface of the electromagnet 310 by cutting off power applied to the electromagnet 310 may be performed.
  • the semiconductor light emitting devices 1050 induced on the surface of the electromagnet part 310 by the magnetic field may be separated from the surface of the electromagnet part 310 as power supply is stopped and the magnetic field disappears.
  • the semiconductor light emitting devices 1050 separated from the surface of the electromagnet part 310 may be collected on one surface of the tray 170 provided in the fluid chamber 162 to supply the semiconductor light emitting devices 1050 during self-assembly.
  • the step of collecting the semiconductor light emitting devices 1050 guided to the surface of the electromagnet part 310 may include the first electromagnet ( Blocking the power applied to 311) to collect the semiconductor light emitting devices 1500 induced on the surface of the first electromagnet 311, changing the positions of the first electromagnet 311 and the second electromagnet 312 to each other , And cutting off power applied to the second electromagnet 312 to collect the semiconductor light emitting devices 1050 induced on the surface of the second electromagnet 312.
  • the first electromagnet 311 and the second electromagnet 312 in a state in which power is applied may be moved to the upper portion of the tray 170.
  • the electromagnet part 310 may be moved to the top of the tray 170 so that the first electromagnet 311 faces one surface of the tray 170 where the semiconductor light emitting devices 1050 are to be collected, and the first electromagnet ( The spacing between the 311 and the tray 170 may be arranged to be minimized without contacting each other.
  • the movement of the electromagnet part 310 may include movement of the fluid chamber 162 in the height direction (z-axis).
  • the semiconductor light emitting devices 1050 collected on the surface of the first electromagnet 311 by a magnetic field may be separated from the surface of the first electromagnet 311.
  • the separated semiconductor light emitting devices 1050 may be collected on one surface of the tray 170, and the gap between the first electromagnet 311 and the tray 170 is narrowed so that the semiconductor light emitting devices 1050 are ) Can be prevented from deviating to the periphery.
  • power application to the second electromagnet 312 may be continuously performed.
  • the positions of the first electromagnet 311 and the second electromagnet 312 may be changed to each other. That is, the step of disposing the second electromagnet 312 toward the top of the tray 170 may be performed. For example, when the first electromagnet 311 and the second electromagnet 312 are extended in one direction, they may be rotated 180° around the extension direction, and the second electromagnet 312 is still powered. It may be in an authorized state.
  • the semiconductor light emitting devices 1050 collected on the surface of the second electromagnet 312 may be collected on the tray 170 by cutting off power applied to the second electromagnet 312.
  • the semiconductor light emitting device collection method described above can efficiently remove the semiconductor light emitting devices 1050 remaining in the fluid chamber 162 at once, thereby improving production efficiency, and reducing material cost through reuse of the semiconductor light emitting devices 1050 Can be expected.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)

Abstract

Selon un mode de réalisation de la présente invention, un appareil pour collecter des diodes électroluminescentes à semi-conducteur comprend : une unité d'électroaimant disposée dans une chambre de fluide et formant un champ magnétique lorsqu'une puissance est appliquée à celle-ci, la chambre de fluide recevant des diodes électroluminescentes à semi-conducteur comprenant un corps magnétique ; une unité d'alimentation connectée à l'unité d'électroaimant pour appliquer de l'énergie à l'unité d'électroaimant ; et une unité d'entraînement pour déplacer l'unité d'électroaimant dans la direction de la largeur, la direction longitudinale et la direction de hauteur de la chambre de fluide, l'unité d'électroaimant guidant les diodes électroluminescentes à semi-conducteur vers une surface de celle-ci sur laquelle un champ magnétique est formé lorsque de l'énergie est appliquée à celle-ci.
PCT/KR2019/011283 2019-08-28 2019-09-03 Appareil et procédé de collecte de diodes électroluminescentes à semi-conducteur WO2021040111A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP19943515.7A EP4024440A4 (fr) 2019-08-28 2019-09-03 Appareil et procédé de collecte de diodes électroluminescentes à semi-conducteur
US17/638,163 US20220367423A1 (en) 2019-08-28 2019-09-03 Apparatus and method for collecting semiconductor light emitting diodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190106060A KR20200026725A (ko) 2019-08-28 2019-08-28 반도체 발광소자 수거 장치 및 수거 방법
KR10-2019-0106060 2019-08-28

Publications (1)

Publication Number Publication Date
WO2021040111A1 true WO2021040111A1 (fr) 2021-03-04

Family

ID=69810040

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2019/011283 WO2021040111A1 (fr) 2019-08-28 2019-09-03 Appareil et procédé de collecte de diodes électroluminescentes à semi-conducteur

Country Status (4)

Country Link
US (1) US20220367423A1 (fr)
EP (1) EP4024440A4 (fr)
KR (1) KR20200026725A (fr)
WO (1) WO2021040111A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022065524A1 (fr) * 2020-09-22 2022-03-31 엘지전자 주식회사 Procédé de fabrication de dispositif d'affichage
WO2022080513A1 (fr) * 2020-10-13 2022-04-21 엘지전자 주식회사 Dispositif de récupération d'élément électroluminescent et procédé de récupération d'élément électroluminescent l'utilisant

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008525206A (ja) * 2004-12-22 2008-07-17 イーストマン コダック カンパニー 熱制御流体自己組立
KR20180030454A (ko) * 2016-09-15 2018-03-23 일룩스 아이엔씨. 발광 표시 장치의 유체 조립 시스템 및 방법
KR20180130845A (ko) * 2017-05-30 2018-12-10 엘지전자 주식회사 반도체 발광소자를 이용한 디스플레이 장치
KR20190009003A (ko) * 2016-06-23 2019-01-25 일룩스 아이엔씨. 유체 어셈블리 중 비대칭 안정성을 제공하는 다이오드
KR20190096474A (ko) * 2018-02-08 2019-08-20 삼성디스플레이 주식회사 발광 장치 및 그의 제조 방법

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9755110B1 (en) * 2016-07-27 2017-09-05 Sharp Laboratories Of America, Inc. Substrate with topological features for steering fluidic assembly LED disks
US10242977B2 (en) * 2014-10-31 2019-03-26 eLux, Inc. Fluid-suspended microcomponent harvest, distribution, and reclamation
US10418527B2 (en) * 2014-10-31 2019-09-17 eLux, Inc. System and method for the fluidic assembly of emissive displays

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008525206A (ja) * 2004-12-22 2008-07-17 イーストマン コダック カンパニー 熱制御流体自己組立
KR20190009003A (ko) * 2016-06-23 2019-01-25 일룩스 아이엔씨. 유체 어셈블리 중 비대칭 안정성을 제공하는 다이오드
KR20180030454A (ko) * 2016-09-15 2018-03-23 일룩스 아이엔씨. 발광 표시 장치의 유체 조립 시스템 및 방법
KR20180130845A (ko) * 2017-05-30 2018-12-10 엘지전자 주식회사 반도체 발광소자를 이용한 디스플레이 장치
KR20190096474A (ko) * 2018-02-08 2019-08-20 삼성디스플레이 주식회사 발광 장치 및 그의 제조 방법

Also Published As

Publication number Publication date
EP4024440A1 (fr) 2022-07-06
US20220367423A1 (en) 2022-11-17
EP4024440A4 (fr) 2023-10-25
KR20200026725A (ko) 2020-03-11

Similar Documents

Publication Publication Date Title
WO2021149861A1 (fr) Appareil d'affichage utilisant un dispositif électroluminescent à semi-conducteur
WO2020262792A1 (fr) Procédé de fabrication de dispositif d'affichage et substrat pour fabrication pour dispositifs d'affichage
WO2021149856A1 (fr) Dispositif d'affichage utilisant un élément électroluminescent à semi-conducteur et son procédé de fabrication
WO2021107237A1 (fr) Dispositif d'affichage utilisant des éléments électroluminescents à semi-conducteur et son procédé de fabrication
WO2021162155A1 (fr) Dispositif d'affichage utilisant des dispositifs électroluminescents à semi-conducteur
WO2021145499A1 (fr) Appareil d'affichage utilisant un dispositif électroluminescent à semi-conducteur
WO2021149862A1 (fr) Appareil et procédé pour l'auto-assemblage d'élément électroluminescent à semi-conducteur
WO2020091252A1 (fr) Appareil et procédé d'auto-assemblage pour un dispositif électroluminescent à semi-conducteur
WO2020235732A1 (fr) Appareil et procédé d'auto-assemblage pour dispositifs électroluminescent à semi-conducteur
WO2020122698A2 (fr) Dispositif d'affichage et procédé d'auto-assemblage pour dispositif électroluminescent à semi-conducteur
WO2021162152A1 (fr) Appareil et procédé d'auto-assemblage de dispositif électroluminescent à semi-conducteur
WO2020085677A1 (fr) Appareil et procédé pour un dispositif électroluminescent à semi-conducteur à auto-assemblage
WO2021162159A1 (fr) Dispositif d'affichage utilisant des dispositifs électroluminescents à semi-conducteur
WO2021117974A1 (fr) Dispositif d'alimentation en élément électroluminescent à semi-conducteur et procédé d'alimentation
WO2021153833A1 (fr) Dispositif d'affichage utilisant un élément électroluminescents à semi-conducteur, et son procédé de fabrication
WO2021107271A1 (fr) Dispositif d'affichage utilisant une micro-del
WO2021040110A1 (fr) Dispositif d'affichage utilisant des éléments électroluminescents à semi-conducteur et son procédé de fabrication
WO2021049692A1 (fr) Dispositif d'affichage mettant en œuvre une diode électroluminescente à semi-conducteur
WO2020085678A1 (fr) Dispositif d'affichage utilisant un dispositif électroluminescent à semi-conducteur et son procédé de fabrication
WO2019203403A1 (fr) Appareil et procédé d'auto-assemblage d'élément électroluminescent semi-conducteur
WO2021040111A1 (fr) Appareil et procédé de collecte de diodes électroluminescentes à semi-conducteur
WO2022045392A1 (fr) Substrat de fabrication de dispositif d'affichage
WO2021162153A1 (fr) Dispositif d'affichage utilisant un élément électroluminescent à semi-conducteur, et son procédé de fabrication
WO2021145498A1 (fr) Dispositif d'affichage mettant en œuvre un élément émetteur de lumière à semi-conducteur
WO2021107273A1 (fr) Dispositif d'affichage utilisant des éléments électroluminescents à semi-conducteur et son procédé de fabrication

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19943515

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2019943515

Country of ref document: EP

Effective date: 20220328