WO2022080513A1 - Dispositif de récupération d'élément électroluminescent et procédé de récupération d'élément électroluminescent l'utilisant - Google Patents

Dispositif de récupération d'élément électroluminescent et procédé de récupération d'élément électroluminescent l'utilisant Download PDF

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WO2022080513A1
WO2022080513A1 PCT/KR2020/013929 KR2020013929W WO2022080513A1 WO 2022080513 A1 WO2022080513 A1 WO 2022080513A1 KR 2020013929 W KR2020013929 W KR 2020013929W WO 2022080513 A1 WO2022080513 A1 WO 2022080513A1
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light emitting
electrode
substrate
emitting device
recovering
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PCT/KR2020/013929
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English (en)
Korean (ko)
Inventor
장원재
김진성
강병준
김명수
김정훈
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엘지전자 주식회사
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Priority to PCT/KR2020/013929 priority Critical patent/WO2022080513A1/fr
Publication of WO2022080513A1 publication Critical patent/WO2022080513A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits

Definitions

  • the embodiment relates to an apparatus for recovering a light emitting device and a method for recovering a light emitting device using the same.
  • a display device may display a high-quality image by using a self-luminous device such as a light emitting diode as a light source of a pixel.
  • a self-luminous device such as a light emitting diode as a light source of a pixel.
  • Light emitting diodes have excellent durability even in harsh environmental conditions, and have a long lifespan and high luminance, so they are spotlighted as a light source for next-generation display devices.
  • a typical display panel contains millions of pixels. Accordingly, since it is very difficult to align the light emitting devices in each of the millions of small pixels, various studies on a method for aligning the light emitting devices in a display panel are being actively conducted in recent years.
  • One of the recent spotlight alignment techniques is an alignment technique using a dielectrophoretic force formed between electrodes. That is, an electric field is formed between the two electrodes by the voltage applied to the two electrodes. When the light emitting element is positioned around two electrodes, holes and electrons of the light emitting element move according to an electric field formed between the two electrodes, so that the light emitting element is aligned between the two electrodes.
  • aligned means aligned along an electric field E formed in a vertical direction between the first electrode 1a and the second electrode 1b.
  • Note aligned means that the first electrode 1a and It means that it is not aligned along the electric field E between the second electrodes 1b.
  • the light emitting device is randomly dropped on the substrate in the form of droplets. While the first electrode 1a and the second electrode 1b are fixedly disposed with directionality, since the light emitting element is randomly dropped, the first electrode 1a and the second electrode 1b are disposed in a vertical direction between the first electrode 1a and the second electrode 1b.
  • the number of aligned light emitting elements is very small. Even when the electric field formed between the first electrode 1a and the second electrode 1b is used, the light emitting element is aligned between the first electrode 1a and the second electrode 1b due to the limitation of the dielectrophoretic force caused by the electric field.
  • the light emitting device disposed with the opposite polarity to the electric field formed between the first electrode 1a and the second electrode 1b is not affected by the electric field, so that between the first electrode 1a and the second electrode 1b cannot be aligned to (4 in Fig. 1b).
  • a light emitting device that is not properly aligned between the first electrode 1a and the second electrode 1b does not contribute to luminance because light is not emitted.
  • a light emitting device that is not properly aligned between the first electrode 1a and the second electrode 1b interferes with the propagation of light from the properly aligned light emitting device, thereby causing a decrease in luminance.
  • barrier ribs are provided in each sub-pixel on the substrate so that the light emitting device dropped in the form of droplets does not spread to the edge.
  • some light emitting elements are disposed outside the barrier rib beyond the barrier rib.
  • the light emitting element disposed outside the barrier rib is a discarded light emitting element that does not contribute to luminance at all.
  • the embodiments aim to solve the above and other problems.
  • Another object of the embodiment is to provide a light emitting device recovery device capable of efficiently recovering the light emitting device.
  • Another object of the embodiment is to provide an apparatus for recovering a light emitting device that can significantly reduce the manufacturing cost.
  • Another object of the embodiment is to provide an apparatus for recovering a light emitting element capable of improving the luminance of each pixel.
  • the device for recovering a light emitting device includes: a dropper for dropping a plurality of light emitting devices on a substrate; a voltage applying unit for applying a voltage to the first electrode and the second electrode of the substrate to align the plurality of light emitting devices; and a recovery unit configured to recover light emitting devices that are not aligned on the substrate.
  • the light emitting device that is not aligned on the substrate or disposed in the non-light emitting region between the first and second barrier ribs is easily recovered using the recovery unit, so that the abnormal alignment that is discarded once dropped on the substrate There is an advantage in that the manufacturing cost can be significantly reduced by recovering and recycling the light emitting device.
  • the luminance of the abnormally aligned light emitting device may be reduced by hindering the propagation of light from the normally aligned light emitting device. According to at least one of the embodiments, there is an advantage that luminance can be remarkably improved by recovering the entire amount of the abnormally aligned light emitting device using the recovery unit.
  • 1A shows a state in which light emitting devices are aligned.
  • Figure 1b shows the invention element is not aligned.
  • FIG. 2 is a block diagram schematically showing a display device according to an embodiment.
  • FIG. 3 is a circuit diagram illustrating an example of the pixel of FIG. 2 .
  • FIG. 4 is a plan view illustrating the display panel of FIG. 2 in detail.
  • FIG. 5 is a plan view illustrating in detail a pixel of the display area of FIG. 4 .
  • FIG. 6 is a cross-sectional view schematically illustrating the display panel of FIG. 2 .
  • FIG. 7 shows an apparatus for recovering a light emitting element according to the first embodiment.
  • FIG. 8 is a plan view illustrating a state in which a light emitting device is recovered in the device for recovering a light emitting device according to the first embodiment.
  • FIG. 9 is a cross-sectional view illustrating a state in which a light emitting device is recovered in the device for recovering a light emitting device according to the first embodiment.
  • FIG. 10 is an exemplary view showing the movement of the recovery unit.
  • 11 is another exemplary view showing the movement of the recovery unit.
  • 12A and 12B show a state in which a light emitting device is recovered using an electromagnet.
  • 25 is a cross-sectional view illustrating a light emitting device according to a second embodiment.
  • 26 shows an apparatus for recovering a light emitting element according to a second embodiment.
  • FIG. 27 is a cross-sectional view illustrating a state in which a light emitting device is recovered in the device for recovering a light emitting device according to the second embodiment.
  • the terminology used in the embodiments of the present invention is for describing the embodiments and is not intended to limit the present invention.
  • the singular form may also include the plural form unless otherwise specified in the phrase, and when it is described as "at least one (or more than one) of B and (and) C", it can be combined with A, B, and C. It may include one or more of all combinations.
  • terms such as first, second, A, B, (a), (b), etc. may be used. These terms are only for distinguishing the component from other components, and are not limited to the essence, order, or order of the component by the term.
  • a component when it is described that a component is 'connected', 'coupled' or 'connected' to another component, the component is not only directly connected, coupled or connected to the other component, but also with the component It may also include a case of 'connected', 'coupled' or 'connected' due to another element between the other elements.
  • the upper (above) or lower (below) is not only when two components are in direct contact with each other, but also one Also includes a case in which another component as described above is formed or disposed between two components.
  • the up (up) or down (down) it may include not only the upward direction but also the meaning of the downward direction based on one component.
  • FIG. 2 is a block diagram schematically showing a display device according to an embodiment
  • FIG. 3 is a circuit diagram showing an example of the pixel of FIG. 2 .
  • the display device may include a display panel 10 , a driving circuit 20 , a scan driver 30 , and a power supply circuit 50 .
  • the driving circuit 20 may include a data driver 21 and a timing controller 22 .
  • the display panel 10 may have a rectangular shape on a plane.
  • the flat shape of the display panel 10 is not limited to a rectangle, and may be formed in other polygons, circles, or ovals. At least one side of the display panel 10 may be bent to a predetermined curvature.
  • the display panel 10 may be divided into a display area DA and a non-display area NDA disposed around the display area DA.
  • the display area DA is an area in which pixels PX are formed to display an image.
  • the display panel 10 includes data lines (D1 to Dm, m is an integer greater than or equal to 2), scan lines crossing the data lines D1 to Dm (S1 to Sn, n is an integer greater than or equal to 2), high potential voltage
  • the high potential voltage line VDDL supplied, the low potential voltage line VSSL supplied with the low potential voltage, and the pixels PXs connected to the data lines D1 to Dm and the scan lines S1 to Sn. may include
  • Each of the pixels PX may include a first sub-pixel PX1 , a second sub-pixel PX2 , and a third sub-pixel PX3 .
  • the first sub-pixel PX1 may emit a first color light
  • the second sub-pixel PX2 may emit a second color light
  • the third sub-pixel PX3 may emit a third color light.
  • the first color light may be red light
  • the second color light may be green light
  • the third color light may be blue light, but is not limited thereto.
  • each of the pixels PX includes three sub-pixels in FIG. 2 , the present invention is not limited thereto. That is, each of the pixels PX may include four or more sub-pixels.
  • Each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 includes at least one of the data lines D1 to Dm, at least one of the scan lines S1 to Sn, and It may be connected to the upper voltage line VDDL.
  • the first sub-pixel PX1 may include a plurality of transistors and at least one capacitor for supplying current to the light emitting devices LDs and the light emitting devices LDs.
  • Each of the light emitting devices LD may be an inorganic light emitting diode including a first electrode, an inorganic semiconductor, and a second electrode.
  • the first electrode may be an anode electrode
  • the second electrode may be a cathode electrode.
  • the plurality of transistors may include a driving transistor DT for supplying current to the light emitting devices LD and a scan transistor ST for supplying a data voltage to the gate electrode of the driving transistor DT as shown in FIG. 3 .
  • the driving transistor DT is connected to a gate electrode connected to a source electrode of the scan transistor ST, a source electrode connected to a high potential voltage line VDDL to which a high potential voltage is applied, and first electrodes of the light emitting devices LD.
  • a drain electrode connected thereto may be included.
  • the scan transistor ST has a gate electrode connected to the scan line Sk, where k is an integer satisfying 1 ⁇ k ⁇ n, a source electrode connected to the gate electrode of the driving transistor DT, and the data lines Dj and j are and a drain electrode connected to an integer satisfying 1 ⁇ j ⁇ m).
  • the capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT.
  • the storage capacitor Cst stores a difference voltage between the gate voltage and the source voltage of the driving transistor DT.
  • the driving transistor DT and the switching transistor ST may be formed of a thin film transistor.
  • the driving transistor DT and the switching transistor ST have been mainly described in FIG. 3 as being formed of a P-type MOSFET (Metal Oxide Semiconductor Field Effect Transistor), the present invention is not limited thereto.
  • the driving transistor DT and the switching transistor ST may be formed of an N-type MOSFET. In this case, the positions of the source electrode and the drain electrode of each of the driving transistor DT and the switching transistor ST may be changed.
  • each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 includes one driving transistor DT, one scan transistor ST, and one capacitor ( ).
  • Cst) has been exemplified including 2T1C (2 Transistor - 1 capacitor), but the present invention is not limited thereto.
  • Each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include a plurality of scan transistors ST and a plurality of capacitors Cst.
  • the second sub-pixel PX2 and the third sub-pixel PX3 may be represented with substantially the same circuit diagram as the first sub-pixel PX1 , a detailed description thereof will be omitted.
  • the driving circuit 20 outputs signals and voltages for driving the display panel 10 .
  • the driving circuit 20 may include a data driver 21 and a timing controller 22 .
  • the data driver 21 receives digital video data DATA and a source control signal DCS from the timing controller 22 .
  • the data driver 21 converts the digital video data DATA into analog data voltages according to the source control signal DCS and supplies them to the data lines D1 to Dm of the display panel 10 .
  • the timing controller 22 receives digital video data DATA and timing signals from the host system.
  • the timing signals may include a vertical sync signal, a horizontal sync signal, a data enable signal, and a dot clock.
  • the host system may be an application processor of a smartphone or tablet PC, a system-on-chip of a monitor or TV, or the like.
  • the timing controller 22 generates control signals for controlling operation timings of the data driver 21 and the scan driver 30 .
  • the control signals may include a source control signal DCS for controlling an operation timing of the data driver 21 and a scan control signal SCS for controlling an operation timing of the scan driver 30 .
  • the driving circuit 20 may be disposed in the non-display area NDA provided on one side of the display panel 10 .
  • the driving circuit 20 is formed of an integrated circuit (IC) and may be mounted on the display panel 10 by a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method,
  • COG chip on glass
  • COP chip on plastic
  • ultrasonic bonding method The present invention is not limited thereto.
  • the driving circuit 20 may be mounted on a circuit board (not shown) instead of the display panel 10 .
  • the data driver 21 may be mounted on the display panel 10 by a chip on glass (COG) method, a chip on plastic (COP) method, or an ultrasonic bonding method, and the timing controller 22 may be mounted on a circuit board. there is.
  • COG chip on glass
  • COP chip on plastic
  • the scan driver 30 receives the scan control signal SCS from the timing controller 22 .
  • the scan driver 30 generates scan signals according to the scan control signal SCS and supplies them to the scan lines S1 to Sn of the display panel 10 .
  • the scan driver 30 may include a plurality of transistors and may be formed in the non-display area NDA of the display panel 10 .
  • the scan driver 30 may be formed of an integrated circuit, and in this case, may be mounted on a gate flexible film attached to the other side of the display panel 10 .
  • the circuit board may be attached on pads provided on one edge of the display panel 10 using an anisotropic conductive film. Due to this, the lead lines of the circuit board may be electrically connected to the pads.
  • the circuit board may be a flexible printed circuit board, a printed circuit board or a flexible film such as a chip on film. The circuit board may be bent under the display panel 10 . For this reason, one side of the circuit board may be attached to one edge of the display panel 10 , and the other side may be disposed under the display panel 10 to be connected to a system board on which a host system is mounted.
  • the power supply circuit 50 may generate voltages necessary for driving the display panel 10 from main power applied from the system board and supply the voltages to the display panel 10 .
  • the power supply circuit 50 generates a high potential voltage VDD and a low potential voltage VSS for driving the light emitting devices LD of the display panel 10 from the main power source to generate the display panel 10 . It can be supplied to the high potential voltage line VDDL and the low potential voltage line VSSL.
  • the power supply circuit 50 may generate and supply driving voltages for driving the driving circuit 20 and the scan driving unit 30 from the main power.
  • FIG. 4 is a plan view illustrating the display panel of FIG. 2 in detail. 4 , for convenience of explanation, data pads DP1 to DPp, p is an integer greater than or equal to 2), floating pads FD1 and FD2, power pads PP1 and PP2, and floating lines FL1 and FL2 , only the low potential voltage line VSSL, the data lines D1 to Dm, the first electrodes 260 and the second electrodes 220 are illustrated.
  • data lines D1 to Dm, first electrodes 210 , second electrodes 220 , and pixels PX are disposed.
  • the data lines D1 to Dm may extend long in the second direction (Y-axis direction).
  • One side of the data lines D1 to Dm may be connected to the driving circuit 20 . Accordingly, the data voltages of the driving circuit 20 may be applied to the data lines D1 to Dm.
  • the first electrodes 210 may be disposed to be spaced apart from each other by a predetermined interval in the first direction (X-axis direction). Accordingly, the first electrodes 210 may not overlap the data lines D1 to Dm.
  • the first electrodes 210 disposed at the right edge of the display area DA may be connected to the first floating line FL1 in the non-display area NDA.
  • the first electrodes 210 disposed at the left edge of the display area DA may be connected to the second floating line FL2 in the non-display area NDA.
  • Each of the second electrodes 220 may extend long in the first direction (X-axis direction). Accordingly, the second electrodes 220 may overlap the data lines D1 to Dm. Also, the second electrodes 220 may be connected to the low potential voltage line VSSL in the non-display area NDA. Accordingly, the low potential voltage of the low potential voltage line VSSL may be applied to the second electrodes 220 .
  • Each of the pixels PX may include a first sub-pixel PX1 , a second sub-pixel PX2 , and a third sub-pixel PX3 .
  • the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of each of the pixels PXs have the first electrodes 210 , the second electrodes, and the data lines D1 to Dm. ) may be arranged in regions defined in a matrix form. 4 illustrates that the pixel PX includes three sub-pixels, but is not limited thereto, and each of the pixels PX may include four or more sub-pixels.
  • Each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of the pixels PX may be disposed in the first direction (X-axis direction), but is not limited thereto. That is, each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of the pixels PX may be disposed in the second direction (Y-axis direction) or in a zigzag shape. and may be arranged in various other forms.
  • the first sub-pixel PX1 may emit a first color light
  • the second sub-pixel PX2 may emit a second color light
  • the third sub-pixel PX3 may emit a third color light.
  • the first color light may be red light
  • the second color light may be green light
  • the third color light may be blue light, but is not limited thereto.
  • a pad part PA including data pads DP1 to DPp, floating pads FD1 and FD2 and power pads PP1 and PP2, and a driving circuit 20 , a first floating line FL1 , a second floating line FL2 , and a low potential voltage line VSSL may be disposed.
  • the pad part PA including the data pads DP1 to DPp, the floating pads FD1 and FD2 and the power pads PP1 and PP2 is one edge of the display panel 10 , for example, the lower side. It can be placed on the edge.
  • the data pads DP1 to DPp, the floating pads FD1 and FD2, and the power pads PP1 and PP2 may be disposed in parallel in the first direction (X-axis direction) in the pad part PA.
  • a circuit board may be attached to the data pads DP1 to DPp, the floating pads FD1 and FD2, and the power pads PP1 and PP2 using an anisotropic conductive film. Accordingly, the circuit board and the data pads DP1 to DPp, the floating pads FD1 and FD2, and the power pads PP1 and PP2 may be electrically connected to each other.
  • the driving circuit 20 may be connected to the data pads DP1 to DPp through the link lines LL.
  • the driving circuit 20 may receive digital video data DATA and timing signals through the data pads DP1 to DPp.
  • the driving circuit 20 may convert the digital video data DATA into analog data voltages and supply the converted digital video data DATA to the data lines D1 to Dm of the display panel 10 .
  • the low potential voltage line VSSL may be connected to the first power pad PP1 and the second power pad PP2 of the pad part PA.
  • the low potential voltage line VSSL may extend long in the second direction (Y-axis direction) in the non-display area NDA at the left outer side and the right outer side of the display area DA.
  • the low potential voltage line VSSL may be connected to the second electrode 220 . For this reason, the low potential voltage of the power supply circuit 50 is applied to the second electrode 220 through the circuit board, the first power pad PP1 , the second power pad PP2 , and the low potential voltage line VSSL. can be
  • the first floating line FL1 may be connected to the first floating pad FD1 of the pad part PA.
  • the first floating line FL1 may extend long in the second direction (Y-axis direction) in the non-display area NDA on the left and right sides of the display area DA.
  • the first floating pad FD1 and the first floating line FL1 may be a dummy pad and a dummy line to which no voltage is applied.
  • the second floating line FL2 may be connected to the second floating pad FD2 of the pad part PA.
  • the first floating line FL1 may extend long in the second direction (Y-axis direction) in the non-display area NDA on the left and right sides of the display area DA.
  • the second floating pad FD2 and the second floating line FL2 may be a dummy pad and a dummy line to which no voltage is applied.
  • the light emitting devices ( 300 of FIG. 5 ) have a very small size, they are mounted on the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of each of the pixels PXs. very difficult to do
  • an electric field may be formed in each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of the pixels PX to align the light emitting devices 300 during the manufacturing process.
  • the light emitting devices 300 may be aligned by applying a dielectrophoretic force to the light emitting devices 300 using a dielectrophoretic method during the manufacturing process.
  • the first electrodes 210 are spaced apart from each other at a predetermined interval in the first direction (X-axis direction), but during the manufacturing process, the first electrodes 210 are disposed in the first direction (X-axis direction). Without being disconnected, it can be arranged to be extended for a long time.
  • the first electrodes 210 may be connected to the first floating line FL1 and the second floating line FL2 during the manufacturing process. Therefore, the first electrodes 210 may receive a ground voltage through the first floating line FL1 and the second floating line FL2 . Therefore, after aligning the light emitting devices 300 using a dielectrophoresis method during the manufacturing process, the first electrodes 210 are disconnected, so that the first electrodes 210 are moved in the first direction (X-axis direction). They may be spaced apart from each other at a predetermined interval.
  • first floating line FL1 and the second floating line FL2 are lines for applying a ground voltage during a manufacturing process, and no voltage may be applied to the completed display device.
  • a ground voltage may be applied to the first floating line FL1 and the second floating line FL2 to prevent static electricity in the completed display device.
  • FIG. 5 is a plan view illustrating in detail a pixel of the display area of FIG. 4 .
  • the pixel PX may include a first sub-pixel PX1 , a second sub-pixel PX2 , and a third sub-pixel PX3 .
  • the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of each of the pixels PXs have scan lines Sk and data lines Dj, Dj+1, Dj+ 2, Dj+3) may be arranged in a matrix form in regions defined by the intersection structure.
  • the scan lines Sk are arranged to extend long in the first direction (X-axis direction), and the data lines Dj, Dj+1, Dj+2, and Dj+3 intersect the first direction (X-axis direction). It may be arranged to extend long in the second direction (Y-axis direction).
  • Each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 may include a first electrode 210 , a second electrode 220 , and a plurality of light emitting devices 300 . there is.
  • the first electrode 210 and the second electrode 220 may be electrically connected to the light emitting devices 300 , and may receive voltages respectively so that the light emitting devices 300 emit light.
  • the first electrode 210 of any one of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 is spaced apart from the first electrode 210 of the sub-pixel adjacent thereto.
  • the first electrode 210 of the first sub-pixel PX1 may be disposed to be spaced apart from the first electrode 210 of the second sub-pixel PX2 adjacent thereto.
  • the first electrode 210 of the second sub-pixel PX2 may be disposed to be spaced apart from the first electrode 210 of the third sub-pixel PX3 adjacent thereto.
  • the first electrode 210 of the third sub-pixel PX3 may be disposed to be spaced apart from the first electrode 210 of the first sub-pixel PX1 adjacent thereto.
  • the second electrode 220 of any one of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 is the second electrode 220 of the sub-pixel adjacent thereto.
  • the second electrode 220 of the first sub-pixel PX1 may be connected to the second electrode 210 of the second sub-pixel PX2 adjacent thereto.
  • the second electrode 220 of the second sub-pixel PX2 may be connected to the second electrode 220 of the third sub-pixel PX3 adjacent thereto.
  • the second electrode 220 of the third sub-pixel PX3 may be connected to the second electrode 220 of the first sub-pixel PX1 adjacent thereto.
  • the first electrode 210 and the second electrode 220 are formed in the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel ( PX3) can be utilized to form an electric field in each.
  • the light emitting devices 300 may be aligned by applying a dielectrophoretic force to the light emitting devices 300 using a dielectrophoresis method during the manufacturing process.
  • An electric field is formed by the voltage applied to the first electrode 210 and the second electrode 220 , and a capacitance is formed by the electric field, so that a dielectrophoretic force can be applied to the light emitting device 300 .
  • the first electrode 210 may be an anode electrode connected to the second conductive semiconductor layer of the light emitting devices 300
  • the second electrode 220 may be a cathode electrode connected to the first conductive semiconductor layer of the light emitting devices 300 .
  • the first conductive semiconductor layer of the light emitting devices 300 may be an n-type semiconductor layer
  • the second conductive semiconductor layer may be a p-type semiconductor layer.
  • the present invention is not limited thereto, and the first electrode 210 may be a cathode electrode and the second electrode 220 may be an anode electrode.
  • the first electrode 210 is a first electrode stem portion 210S that is arranged to extend long in the first direction (X-axis direction), and the first electrode stem portion 210S is branched in the second direction (Y-axis direction). At least one first electrode branch 210B may be included.
  • the second electrode 220 is branched in the second direction (Y-axis direction) from the second electrode stem portion 220S and the second electrode stem portion 220S arranged to extend long in the first direction (X-axis direction). At least one second electrode branch 220B may be included.
  • the first electrode stem 210S may be electrically connected to the thin film transistor 120 through the first electrode contact hole CNTD.
  • the first electrode stem 210S may receive a predetermined driving voltage by the thin film transistor 120 .
  • the thin film transistor 120 to which the first electrode stem 210S is connected may be the driving transistor DT shown in FIG. 3 .
  • the second electrode stem 220S may be electrically connected to the low potential auxiliary line 161 through the second electrode contact hole CNTS.
  • the second electrode stem 220S may receive the low potential voltage of the low potential auxiliary wiring 161 .
  • the second electrode stem 220S in each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of the pixel PX, the second electrode stem 220S is the second electrode contact hole CNTS.
  • the second electrode stem 220S may be a second electrode in any one of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of the pixel PX.
  • the second electrode stem 220S is connected to the low potential voltage line VSSL of the non-display area NDA, the low potential auxiliary wiring 161 through the second electrode contact hole CNTS. may not be connected to That is, the second electrode contact hole CNTS may be omitted.
  • the first electrode stem portion 210S of any one sub-pixel may be disposed parallel to the first electrode stem portion 210S of the sub-pixel adjacent in the first direction (X-axis direction) in the first direction (X-axis direction).
  • the first electrode stem 210S of the first sub-pixel PX1 is disposed parallel to the first electrode stem 210S of the second sub-pixel PX2 in the first direction (X-axis direction).
  • the first electrode stem 210S of the third sub-pixel PX3 may be disposed parallel to the first electrode stem 210S of the first sub-pixel PX1 in the first direction (X-axis direction). This is because, during the manufacturing process, the first electrode stem parts 210S were connected to one another, and after aligning the light emitting devices 300 , they were disconnected through the laser process.
  • the second electrode branch 220B may be disposed between the first electrode branch 210B.
  • the first electrode branch portions 210B may be symmetrically disposed with respect to the first electrode branch portion 220B.
  • 5 illustrates that each of the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 of the pixel PX includes two first electrode branch portions 220B, The present invention is not limited thereto.
  • each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of the pixel PX may include three or more first electrode branches 220B. .
  • each of the first sub-pixel PX1 , the second sub-pixel PX2 , and the third sub-pixel PX3 of the pixel PX includes one second electrode branch 220B.
  • the present invention is not limited thereto.
  • the first The first electrode branch 210B may be disposed between the second electrode branch 220B.
  • the first electrode branch 210B, the second electrode branch 220B, The first electrode branch 210B and the second electrode branch 220B may be disposed in the first direction (X-axis direction) in the order.
  • the plurality of light emitting devices 300 may be disposed between the first electrode branch 210B and the second electrode branch 220B. One end of at least one light emitting device 300 among the plurality of light emitting devices 300 is disposed to overlap the first electrode branch portion 210B, and the other end is disposed to overlap the second electrode branch portion 220B.
  • a second conductive semiconductor layer that is a p-type semiconductor layer may be disposed on one end of the plurality of light emitting devices 300 and a first conductive semiconductor layer that is an n-type semiconductor layer may be disposed on the other end, but the present invention is not limited thereto.
  • a first conductive semiconductor layer that is an n-type semiconductor layer may be disposed on one end of the plurality of light emitting devices 300
  • a second conductive semiconductor layer that is a p-type semiconductor layer may be disposed on the other end of the plurality of light emitting devices 300 .
  • the plurality of light emitting devices 300 may be substantially parallel to each other in the first direction (X-axis direction).
  • the plurality of light emitting devices 300 may be disposed to be spaced apart from each other in the second direction (Y-axis direction). In this case, the spacing between the plurality of light emitting devices 300 may be different from each other. For example, some light emitting devices among the plurality of light emitting devices 300 may be disposed adjacently to form one group, and the remaining light emitting devices 300 may be disposed adjacently to form another group.
  • a connection electrode 260 may be disposed on the first electrode branch 210B and the second electrode branch 220B, respectively.
  • the connection electrodes 260 may be disposed to extend long in the second direction (Y-axis direction), and may be disposed to be spaced apart from each other in the first direction (X-axis direction).
  • the connection electrode 260 may be connected to one end of at least one of the light emitting devices 300 .
  • the connection electrode 260 may be connected to the first electrode 210 or the second electrode 220 .
  • the connection electrode 260 is disposed on the first electrode branch 210B and includes a first connection electrode 261 connected to one end of at least one of the light emitting devices 300 and a second electrode.
  • a second connection electrode 262 disposed on the branch 220B and connected to one end of at least one of the light emitting devices 300 may be included.
  • the first connection electrode 261 serves to electrically connect the plurality of light emitting devices 300 to the first electrode 210
  • the second connection electrode 262 connects the plurality of light emitting devices 300 to each other. It serves to electrically connect to the second electrode 220 .
  • a width of the first connection electrode 261 in the first direction (X-axis direction) may be wider than a width of the first electrode branch part 210B in the first direction (X-axis direction). Also, the width of the second connection electrode 262 in the first direction (X-axis direction) may be wider than the width of the second electrode branch part 220B in the first direction (X-axis direction).
  • each end of the light emitting device 300 is disposed on the first electrode branch 210B of the first electrode 210 and the second electrode branch 220B of the second electrode 220 , the first electrode Due to the insulating layer (not shown) formed on the 210 and the second electrode 220 , the light emitting device 300 may not be electrically connected to the first electrode 210 and the second electrode 220 . Accordingly, each of a portion of a side surface and/or a top surface of the light emitting device 300 may be electrically connected to the first connection electrode 261 and the second connection electrode 262 .
  • a light emitting element is used as a light source.
  • the light emitting device of the embodiment is a self-emitting device that emits light by itself by application of electricity, and may be a semiconductor light emitting device. Since the light emitting device of the embodiment is made of an inorganic semiconductor material, it is resistant to deterioration and has a semi-permanent lifespan, thereby providing stable light, thereby contributing to the realization of high-quality and high-definition images in the display device.
  • FIG. 6 is a cross-sectional view schematically illustrating the display panel of FIG. 2 .
  • the display panel 10 may include a first substrate 40 , a light emitting unit 41 , a color generating unit 42 , and a second substrate 46 .
  • the display panel 10 of the embodiment may include more components than this, but is not limited thereto.
  • One or more insulating layers may be disposed, but this is not limited thereto.
  • the first substrate 40 may support the light emitting unit 41 , the color generating unit 42 , and the second substrate 46 .
  • the second substrate 46 includes various elements as described above, for example, data lines (D1 to Dm, m is an integer greater than or equal to 2) as shown in FIG. 2 , scan lines S1 to Sn, and a high potential voltage.
  • a line VDDL and a low potential voltage line VSSL, a plurality of transistors and at least one capacitor as shown in FIG. 3 , and a first electrode 210 and a second electrode 220 as shown in FIG. 4 . can be formed.
  • the first substrate 40 may be formed of glass, but is not limited thereto.
  • the light emitting unit 41 may provide light to the color generating unit 42 .
  • the light emitting unit 41 may include a plurality of light sources that emit light by themselves by application of electricity.
  • the light source may include a light emitting device ( 300 in FIG. 5 ).
  • the plurality of light emitting devices 300 may be separately arranged for each sub-pixel of a pixel and independently emit light under the control of each individual sub-pixel.
  • the plurality of light emitting devices 300 may be disposed irrespective of the division of the pixels to simultaneously emit light in all sub-pixels.
  • the light emitting device 300 of the embodiment may emit blue light, but is not limited thereto.
  • the light emitting device 300 of the embodiment may emit white light or purple light.
  • the color generating unit 42 may generate a color light different from the light provided by the light emitting unit 41 .
  • the color generator 42 may include a first color generator 43 , a second color generator 44 , and a third color generator 45 .
  • the first color generation unit 43 corresponds to the first sub-pixel PX1 of the pixel
  • the second color generation unit 44 corresponds to the second sub-pixel PX2 of the pixel
  • the third color generation unit ( 45 may correspond to the third sub-pixel PX3 of the pixel.
  • the first color generation unit 43 generates a first color light based on the light provided from the light emitting unit 41
  • the second color generation unit 44 generates a second color light based on the light provided from the light emitting unit 41 .
  • the color light is generated
  • the third color generation unit 45 may generate the third color light based on the light provided from the light emitting unit 41 .
  • the first color generating unit 43 outputs blue light from the light emitting unit 41 as red light
  • the second color generating unit 44 outputs blue light from the light emitting unit 41 as green light
  • the third color generating unit 45 may output the blue light from the light emitting unit 41 as it is.
  • the first color generator 43 includes a first color filter
  • the second color generator 44 includes a second color filter
  • the third color generator 45 includes a third color filter.
  • the first color filter, the second color filter, and the third color filter may be formed of a transparent material through which light can pass.
  • At least one of the first color filter, the second color filter, and the third color filter may include quantum dots.
  • the quantum dots of the embodiment may be selected from a group II-IV compound, a group IV-VI compound, a group IV element, a group IV compound, and combinations thereof.
  • Group II-VI compounds include binary compounds selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, and mixtures thereof; CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgZnTe, HgZnS, HgZnSe, HgZnTe, MgZnS, MgZnS and mixtures thereof bovine compounds; and HgZnTeS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeT
  • the group III-V compound is a binary compound selected from the group consisting of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, and mixtures thereof; a ternary compound selected from the group consisting of GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, and mixtures thereof; and GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb, and mixtures thereof.
  • the group IV-VI compound is a binary compound selected from the group consisting of SnS, SnSe, SnTe, PbS, PbSe, PbTe, and mixtures thereof; a ternary compound selected from the group consisting of SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, and mixtures thereof; and a quaternary compound selected from the group consisting of SnPbSSe, SnPbSeTe, SnPbSTe, and mixtures thereof.
  • the group IV element may be selected from the group consisting of Si, Ge, and mixtures thereof.
  • the group IV compound may be a binary compound selected from the group consisting of SiC, SiGe, and mixtures thereof.
  • Such quantum dots may have a full width of half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, and light emitted through the quantum dots may be emitted in all directions. Accordingly, the viewing angle of the light emitting display device may be improved.
  • FWHM full width of half maximum
  • quantum dots may have the form of spherical, pyramidal, multi-arm, or cubic nanoparticles, nanotubes, nanowires, nanofibers, nanoplatelet particles, etc., but is not limited thereto. does not
  • the first color filter may include red quantum dots
  • the second color filter may include green quantum dots.
  • the third color filter may not include quantum dots, but is not limited thereto.
  • blue light from the light emitting device 300 may be absorbed by the first color filter, and the absorbed blue light may be wavelength-shifted by red quantum dots to output red light.
  • blue light from the light emitting device 300 may be absorbed by the second color filter, and the absorbed blue light may be wavelength-shifted by green quantum dots to output green light.
  • blue light from the foot and device may be absorbed by the third color filter, and the absorbed blue light may be emitted as it is.
  • the light emitting device 300 when the light emitting device 300 is white light, not only the first color filter and the second color filter, but also the third color filter may include quantum dots. That is, the wavelength of white light from the light emitting device 300 may be shifted to blue light by the quantum dots included in the third color filter.
  • At least one of the first color filter, the second color filter, and the third color filter may include a phosphor.
  • some color filters among the first color filter, the second color filter, and the third color filter may include quantum dots, and others may include a phosphor.
  • each of the first color filter and the second color filter may include a phosphor and quantum dots.
  • at least one of the first color filter, the second color filter, and the third color filter may include scattering particles. Since blue light incident to each of the first color filter, the second color filter, and the third color filter is scattered by the scattering particles and the scattered blue light is color-shifted by the corresponding quantum dots, light output efficiency may be improved.
  • the first color generator 43 may include a first color conversion layer and a first color filter.
  • the second color generator 44 may include a second color converter and a second color filter.
  • the third color generator 45 may include a third color conversion layer and a third color filter.
  • Each of the first color conversion layer, the second color conversion layer, and the third color conversion layer may be disposed adjacent to the light emitting part 41 .
  • the first color filter, the second color filter, and the third color filter may be disposed adjacent to the second substrate 46 .
  • the first color filter may be disposed between the first color conversion layer and the second substrate 46 .
  • the second color filter may be disposed between the second color conversion layer and the second substrate 46 .
  • the third color filter may be disposed between the third color conversion layer and the second substrate 46 .
  • the first color filter may be in contact with the upper surface of the first color conversion layer and may have the same size as the first color conversion layer, but the present invention is not limited thereto.
  • the second color filter may be in contact with the upper surface of the second color conversion layer and may have the same size as the second color conversion layer, but is not limited thereto.
  • the third color filter may be in contact with the upper surface of the third color conversion layer and may have the same size as the third color conversion layer, but is not limited thereto.
  • the first color conversion layer may include red quantum dots
  • the second color conversion layer may include green quantum dots.
  • the third color conversion layer may not include quantum dots.
  • the first color filter includes a red-based material that selectively transmits the red light converted by the first color conversion layer
  • the second color filter includes green light that selectively transmits the green light converted by the second color conversion layer It includes a series material
  • the third color filter may include a blue-based material that selectively transmits the blue light transmitted as it is from the third color conversion layer.
  • the light emitting device 300 when the light emitting device 300 is white light, not only the first color conversion layer and the second color conversion layer but also the third color conversion layer may include quantum dots. That is, the wavelength of white light from the light emitting device 300 may be shifted to blue light by the quantum dots included in the third color filter.
  • the second substrate 46 may be disposed on the color generator 42 to protect the color generator 42 .
  • the second substrate 46 may be formed of glass, but is not limited thereto.
  • the second substrate 46 may be referred to as a cover window, a cover glass, or the like.
  • the second substrate 46 may be formed of glass, but is not limited thereto.
  • the embodiment provides a light emitting device recovery device capable of efficiently recovering a light emitting device that does not contribute to light emission on a substrate.
  • FIG. 7 shows an apparatus for recovering a light emitting element according to the first embodiment.
  • the apparatus 100 for collecting a light emitting device may include a projecting unit 101 , a voltage applying unit 102 , and a collecting unit 103 .
  • the light emitting device recovery apparatus 100 according to the first embodiment may include more components than this, but is not limited thereto.
  • the dropper 101 may drop the plurality of light emitting devices 300 onto the substrate 500 .
  • the substrate 500 may be the first substrate 40 illustrated in FIG. 6 .
  • the dispensing unit 101 may be an inkjet device or a dispenser.
  • the head of the inkjet device may include a plurality of light emitting elements 300 in liquid.
  • the plurality of light emitting devices 300 may be sprayed onto the substrate 500 in the form of droplets 107 through a nozzle (not shown) provided at the bottom of the inkjet device. Since the liquid filled in the head of the inkjet device has viscosity, the liquid having the viscosity may be ejected in the form of droplets 107 through the nozzle.
  • a plurality of light emitting devices 300 may be included in the ejected droplet 107 .
  • the droplets 107 dropped on the substrate 500 may be stacked to form a single liquid mass.
  • the substrate 500 includes a plurality of sub-pixels (PX1, PX2, PX3 in FIG. 2), and each sub-pixel (PX1, PX2, PX3 in FIG. 2) includes an emission area EA and a non-light emission area NA.
  • the light emitting area EA is an area in which the light emitting devices 300 are aligned or arranged to emit light
  • the non-emission area NA is the scan lines S1 to Sn, the data lines D1 to Dm, and the transistors (refer to FIG. 3 ). ST, DT).
  • a first barrier rib 503 and a second barrier rib 504 may be disposed on the substrate 500 .
  • the light emitting area EA may be defined by the first barrier rib 503 .
  • Each of the sub-pixels PX1 , PX2 , and PX3 may be defined by the second partition wall 504 .
  • the first partition wall 503 is dropped from the dropper 101 to prevent the stacked droplets 107 from overflowing. That is, the light emitting device 300 may be disposed in the first barrier rib 503 so that the droplet 107 is mainly filled in the first barrier rib 503 .
  • the droplet 107 is placed on the substrate 500 until it overflows the first partition wall 503 .
  • the droplet 107 may be filled in the non-emission area NA between the first partition wall 503 and the second partition wall 504 beyond the first partition wall 503 .
  • the light emitting element 300 is formed in the non-light emitting area NA as well as the light emitting area EA of the substrate 500 by the droplet 107 dropped by the dropping unit 101 . can be located.
  • the light emitting device 300 may be aligned between the first electrode 501 and the second electrode 502 . That is, the light emitting device 300 may be aligned by the dielectrophoretic force between the first electrode 501 and the second electrode 502 . Meanwhile, the first electrode 501 and the second electrode 502 may apply a voltage capable of emitting light to the light emitting device 300 . Accordingly, the first electrode 501 and the second electrode 502 may be disposed in the light emitting area EA of the substrate 500 . The first electrode 501 and the second electrode 502 may be the first electrode 210 and the second electrode 220 illustrated in FIG. 4 .
  • the first electrode 501 and the second electrode 502 may be connected by the voltage applying unit 102 .
  • the voltage applying unit 102 may apply a voltage to the first electrode 501 and the second electrode 502 .
  • An electric field may be formed by the voltage applied to the first electrode 501 and the second electrode 502 . In this electric field, electrons or holes of the light emitting device 300 move to one side, so that the light emitting device 300 may be aligned by a dielectrophoretic force between the first electrode 501 and the second electrode 502 .
  • the light emitting device 300 By the voltage applied between the first electrode 501 and the second electrode 502, some light emitting devices 300 are aligned between the first electrode 501 and the second electrode 502, but other light emitting devices ( 300 may not be aligned between the first electrode 501 and the second electrode 502 . That is, since the light emitting device 300 is dropped in a random direction from the dropper 101 , the light emitting device 300 is disposed on the substrate 500 in a random direction. In this case, the light emitting device 300 disposed so as not to be affected by the electric field between the first electrode 501 and the second electrode 502 may not be aligned between the first electrode 501 and the second electrode 502 . can
  • the light emitting device 300 aligned between the first electrode 501 and the second electrode 502 is referred to as a normal alignment light emitting device 300a, and is aligned between the first electrode 501 and the second electrode 502 .
  • the light emitting device 300 that is not or is disposed between the first barrier rib 503 and the second barrier rib 504 may be referred to as an abnormally aligned light emitting element 300b.
  • the number of normally aligned light emitting devices 300a aligned between the first electrode 501 and the second electrode 502 is not large compared to the number of light emitting devices 300 dropped on the substrate 500 . This means that the number of abnormally aligned light emitting devices 300b is large.
  • the abnormally aligned light emitting device 300b does not contribute to luminance and causes an increase in manufacturing cost, there is an urgent need for a method of recovering and recycling the abnormally aligned light emitting device 300b.
  • the recovery unit 103 may be provided in the embodiment.
  • the recovery unit 103 may recover light emitting devices that are not aligned on the substrate 500 . That is, the recovery unit 103 recovers light emitting devices not aligned between the first electrode 501 and the second electrode 502 or light emitting devices disposed between the first and second partition walls 503 and 504 . can do.
  • the luminance can be improved without interfering with the propagation of the light emitted from the light emitting element between the first electrode 501 and the second electrode 502 .
  • the manufacturing cost can be significantly reduced.
  • the recovery unit 103 may be a permanent magnet or an electromagnet.
  • the recovery unit 103 may recover the light emitting device not aligned on the substrate 500, that is, the abnormally aligned light emitting device 300b, by using a magnetic force with the magnetic layer (312 in FIGS. 24 and 25) of the light emitting device. .
  • the recovery unit 103 may be disposed on the substrate 500 .
  • the recovery unit 103 may be disposed to face the surface of the substrate 500 on which the light emitting device is dropped.
  • the recovery unit 103 may be located within a magnetic force range to which the light emitting element can be pulled.
  • the magnetic force range of the recovery part 103 to which the light emitting device can be pulled is 10 cm
  • the recovery part 103 may be located within 10 cm in the upper direction from the substrate 500 , for example.
  • the abnormally aligned light emitting device 300b may be pulled by the magnetic force of the recovery unit 103 and adhere to the recovery unit 103 .
  • the recovery unit 103 may be movable up, down, left and right so that the light emitting device is positioned within a range of magnetic force that can be pulled.
  • the light emitting device may be capable of linear movement or rotational movement.
  • the recovery unit 103 may move in a zigzag direction with respect to the substrate 500 .
  • the recovery unit 103 may move linearly from the upper left to the right of the substrate 500 , then move downward by a predetermined distance and then linearly move from the right to the left. In this way, since the recovery unit 103 is moved in a zigzag direction over the entire area of the substrate 500 , light emitting devices that are not aligned on the substrate 500 may stick to the recovery unit 103 .
  • the recovery unit 103 may be moved in a rotational direction with respect to the substrate 500 .
  • the recovery unit 103 may be rotated while moving from the upper left to the clockwise direction and from the left to the right. Then, the recovery unit 103 may be rotated while moving in a clockwise direction and from left to right. As the recovery unit 103 moves in the rotational direction over the entire region of the substrate 500 as described above, light emitting devices that are not aligned on the substrate 500 may adhere to the recovery unit 103 .
  • the normally aligned light emitting device 300a is formed by the dielectrophoretic force formed between the first electrode 501 and the second electrode 502 to the first electrode. Since it is fixed between the 501 and the second electrode 502 , the normally aligned light emitting device 300a does not stick to the recovery unit 103 and is continuously disposed between the first electrode 501 and the second electrode 502 . Alignment may be maintained. For example, the force by which the light emitting element is fixed between the first electrode 501 and the second electrode 502 may be greater than the attractive force of the light emitting element by the recovery unit 103 .
  • the recovery unit 103 when it is an electromagnet, it may operate as shown in FIGS. 12A and 12B .
  • a current source 601 and a switch 602 may be electrically connected to a coil wound around an electromagnet.
  • the electromagnet may be magnetized by the current applied by the current source 601 to form a magnetic force.
  • a magnetic force is formed in the electromagnet
  • a magnetic field is not formed in the electromagnet.
  • the electromagnet when the switch 602 is turned on, the electromagnet may be magnetized by the current applied from the current source 601 to form a magnetic force.
  • a light emitting device that is not aligned on the substrate 500 that is, an abnormal light emitting device may be pulled toward the electromagnet and adhere to the electromagnet.
  • the electromagnet When the abnormal light emitting device is recovered from the substrate 500 by the electromagnet, the electromagnet may be moved to the recovery container 610 as shown in FIG. 12B . While the electromagnet is moved to the recovery container 610, the switch 602 is continuously turned on so that the abnormally aligned light emitting device 300b attached to the electromagnet by the magnetic force by the electromagnet does not separate from the electromagnet.
  • the switch 602 When the electromagnet is placed on the recovery vessel 610 , the switch 602 may be turned off. Accordingly, current is no longer applied to the electromagnet, so that a magnetic force is not formed in the electromagnet.
  • the abnormally aligned light emitting device 300b attached to the electromagnet may fall into the recovery container 610 , and the abnormally aligned light emitting device 300b may be recovered in the recovery container 610 . That is, since magnetic force is not formed in the electromagnet, the abnormally aligned light emitting device 300b attached to the electromagnet may be separated from the electromagnet and recovered in the recovery container 610 .
  • the light emitting device may include a magnetic layer in order to cause the abnormally aligned device to stick to the recovery unit 103 .
  • a method of manufacturing a light emitting device will be described with reference to FIGS. 13 to 24 .
  • a lower substrate 304 is prepared.
  • a conductive semiconductor layer 303 may be formed on the substrate 301 to prepare a lower substrate 304 .
  • the conductive semiconductor layer 303 may be an n-type semiconductor layer, but is not limited thereto.
  • the substrate 301 may include a sapphire substrate (Al 2 O 3 ) and a transparent substrate such as glass.
  • the present invention is not limited thereto, and may be formed of a conductive substrate such as GaN, SiC, ZnO, Si, GaP, and GaAs.
  • a case in which the lower substrate 304 is a sapphire substrate (Al 2 O 3 ) will be described as an example.
  • a plurality of conductive semiconductor layers are formed on the substrate 301 .
  • the plurality of conductive semiconductor layers grown by the epitaxial method may be grown by forming a seed crystal and depositing a material.
  • the semiconductor layer is formed by electron beam deposition, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma laser deposition (PLD), and dual-type thermal evaporation. ), sputtering, metal-organic chemical vapor deposition (MOCVD), etc., and preferably, may be formed by metal-organic chemical vapor deposition (MOCVD).
  • MOCVD metal-organic chemical vapor deposition
  • the present invention is not limited thereto.
  • a buffer layer 302 may be further included between the substrate 301 and the conductive semiconductor layer 303 .
  • a buffer layer 302 may be formed on a substrate 301 , and a conductive semiconductor layer 303 may be formed thereon.
  • the buffer layer 302 may be included to reduce a lattice constant difference between the substrate 301 and the conductive semiconductor layer 303 .
  • the buffer layer 302 may be formed to provide seed crystals so that the conductive semiconductor layer 303 can smoothly grow crystals.
  • the buffer layer 302 may be an undoped semiconductor layer, and the undoped semiconductor layer may include the same material as the first sub-semiconductor layer 31 ′, but may be an undoped material.
  • the undoped semiconductor layer may be at least one of undoped InAlGaN, GaN, AlGaN, InGaN, AlN, and InN, but is not limited thereto.
  • an undoped semiconductor layer is formed as the buffer layer 302 on the substrate 301 is exemplified.
  • a first mask layer 305 including a plurality of mask patterns 306 formed in at least a partial region on the lower substrate 304 is formed.
  • a plurality of mask patterns 306 may be disposed to be spaced apart from each other.
  • the first mask layer 305 may include an area in which the mask pattern 306 is disposed and an opening 307 formed as the plurality of mask patterns 306 are disposed to be spaced apart from each other. Crystals of the conductive semiconductor layer 303 may grow through the opening 307 of the first mask layer 305 .
  • the mask pattern 306 of the first mask layer 305 may include at least one of an insulating material and a conductive material.
  • the insulating material may be silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), etc.
  • the conductive material may be ITO, IZO, IGO, ZnO, graphene, graphene oxide, etc. can However, the present invention is not limited thereto.
  • the crystal of the conductive semiconductor layer 303 When the crystal of the conductive semiconductor layer 303 is grown, it is not uniformly crystallized at the grain interface of the crystal, so that defects may be formed in the grown semiconductor layer.
  • the defect may be a factor impairing electron mobility in the semiconductor layers 310 and 320 of the light emitting device 300 or the luminous efficiency of the light emitting device 300 .
  • the growth of the crystal grain interface is inhibited by the mask pattern 306 and a defect formed in the opening 307 . only will be left Accordingly, the number of defects formed in the finally formed first semiconductor layer 308 can be reduced.
  • the first mask layer 305 may be etched together and removed. Accordingly, in the light emitting device 300 formed on the mask pattern 306 of the first mask layer 305 , the separation surface may have the same shape as the surface of the mask pattern 306 . That is, the separation surface of the light emitting device 300 may have various shapes depending on the pattern of the first mask layer 305 and the shape or structure of the mask pattern 306 .
  • crystals of the conductive semiconductor layer 303 in the region overlapping the opening 307 grow in the vertical direction to the same level as the thickness of the mask pattern 306 .
  • crystals grown in the opening 307 grow horizontally on the mask pattern 306 to spread the crystals of the conductive semiconductor layer 303 .
  • crystals of the conductive semiconductor layer 303 are merged in a partial region on the mask pattern 306 to form a part of the first conductive semiconductor layer 308 .
  • a region in which the conductive semiconductor layer 303 crystal is merged on the mask pattern 306 becomes a grain interface to form a defect.
  • defects formed in the region overlapping with the mask pattern 306 may not grow, and the number of defects in the finally formed first semiconductor layer 308 may decrease.
  • the active layer 309 and the second conductive semiconductor layer are formed on the first conductive semiconductor layer 308 .
  • Layers 310 are stacked to form a device stack 311 .
  • the active layer 309 and the second conductive semiconductor layer 310 may be grown in the same manner as the first conductive semiconductor layer 308 except that the first mask layer 305 is formed and grown through the opening 307 . there is. A detailed description thereof will be omitted.
  • the light emitting device 300 may further include a magnetic layer in at least one of the first semiconductor layer 308 and the second semiconductor layer 310 .
  • a magnetic layer 312 may be formed on the second conductive semiconductor layer 310 of the device stack 311 .
  • the magnetic layer 312 may be made of a metal material having magnetic properties.
  • the magnetic layer 312 may include nickel (Ni), iron (Fe), or the like, but is not limited thereto.
  • the magnetic layer 312 of the light emitting device 300 may cause the light emitting device 300 to adhere to the recovery unit 130 by the magnetic force of the recovery unit 130 .
  • the magnetic layer 312 may be an electrode that allows a current to flow through the second conductive semiconductor layer 310 . When the magnetic layer 312 is an electrode, a current may flow in the second conductive semiconductor layer 310 through the magnetic layer 312 .
  • At least one electrode layer may be formed between the second conductive semiconductor layer 310 and the magnetic layer 312 , but the present invention is not limited thereto.
  • a device rod 320 is manufactured by etching the device stack 311 in a vertical direction ( FIGS. 20 and 21 ). For example, a second mask layer 315 including hard mask layers 316 and 317 and a nano-pattern layer 318 is formed on the device stack 311 , and then the device rod 320 is etched. can be manufactured.
  • hard mask layers 316 and 317 and a nano-pattern layer 318 may be formed on the second conductive semiconductor layer 310 of the device stack 311 .
  • the hard mask layers 316 and 317 may be referred to as a second mask layer 315 .
  • the second mask layer 315 may include not only the hard mask layers 316 and 317 but also the nano-pattern layer 318 .
  • the hard mask layers 316 and 317 serve as masks for continuous etching of the first conductive semiconductor layer 308 , the active layer 309 and the second conductive semiconductor layer 310 included in the device stack 311 . can be done
  • the hard mask layers 316 and 317 may include a first layer including an insulating material and a second layer including a metal.
  • the insulating material included in the first layer 316 may include oxide or nitride.
  • it may be silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), or the like.
  • the thickness of the first layer 316 may range from 0.5 ⁇ m to 1.5 ⁇ m, but is not limited thereto.
  • the second layer 317 is not particularly limited as long as it is a conventional material that can serve as a mask for continuous etching of the device stack 311 .
  • the second layer 317 may include chromium (Cr) or the like.
  • the thickness of the second layer 317 may range from 30 nm to 150 nm, but is not limited thereto.
  • a nanopattern layer 318 in which at least one nanopattern is spaced apart from each other may be formed on the hard mask layers 316 and 317 .
  • the nano-pattern layer 318 may serve as a mask for continuous etching of the device stack 311 in which the nano-patterns spaced apart from each other are continuously etched.
  • the nano-pattern layer 318 is not particularly limited as long as it is a method capable of forming a pattern including polymer, polystyrene spheres, silica spheres, and the like.
  • the nano-pattern layer 318 includes a polymer
  • a conventional method for forming a pattern using the polymer may be employed.
  • the nanopattern layer 318 including the polymer may be formed by a method such as photolithography, e-beam lithography, or nanoimprint lithography.
  • the structure, shape, and spacing of the nano-patterned layer 318 may be related to the shape of the light emitting device 300 to be finally manufactured.
  • the structure of the nano-pattern layer 318 is not particularly limited.
  • the device rod 320 manufactured by vertically etching the device stack 311 may have a cylindrical shape.
  • the light emitting device 300 separated from the substrate 301 or the lower substrate 304 may have a cylindrical shape.
  • the present invention is not limited thereto.
  • the region where the nano-pattern layer 318 is formed is not etched and the nano-pattern of the nano-pattern layer 318 is not etched.
  • the spaced area is vertically etched to form a hole.
  • the hole may be selectively formed from the hard mask layers 316 and 317 to the region where the first mask layer 305 is formed.
  • a method of forming a hole by etching the device stack 311 may be performed by a conventional method.
  • the etching process may be a dry etching method, a wet etching method, reactive ion etching (RIE), inductively coupled plasma reactive ion etching (ICP-RIE), or the like.
  • RIE reactive ion etching
  • ICP-RIE inductively coupled plasma reactive ion etching
  • the etching etchant may be Cl 2 or O 2 .
  • the present invention is not limited thereto.
  • the device stack 311 may be etched using a dry etching method and a wet etching method. For example, after etching in the depth direction by a dry etching method, the etched sidewall may be placed on a plane perpendicular to the surface through a wet etching method that is an isotropic etching method.
  • the second mask layer 315 remaining on the vertically etched device stack 311 is removed by a conventional method, for example, a dry etching method or a wet etching method, and a device rod 320 is formed. .
  • the device rod 320 By forming an insulating film 321 on the device rod 320 and removing the mask pattern 306 , at least a portion of the device rod 320 is separated from the substrate 301 or the lower substrate 304 to form the light emitting device 300 . prepared ( FIGS. 22 to 24 ).
  • the insulating film 321 is an insulating material formed on the outer surface of the element rod 320, and may be formed by applying or immersing an insulating material on the outer surface of the vertically etched element rod 320, but is limited thereto. it is not
  • the insulating layer 321 may be formed by atomic layer deposition (ALD).
  • the insulating layer 321 may form the insulating layer 380 of the light emitting device 300 .
  • the insulating layer 321 may be formed of silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy), aluminum oxide (Al 2 O 3 ), or aluminum nitride (AlN).
  • an insulating layer 321 may be formed on a portion of the mask pattern 306 exposed to the outside as the outer surface of the device rod 320 and the device rod 320 are etched apart from each other.
  • the insulating layer 321 is also formed on the magnetic layer 312 , which is the upper surface of the device rod 320 , the first and second conductive semiconductor layers 308 and 310 , and the first and second conductive semiconductor layers of the substrate 500 . Electrical connections between the two electrodes ( 501 and 502 in FIG. 8 ) may be insulated.
  • the insulating layer 321 formed in a direction perpendicular to the longitudinal direction of the device rod 320 that is, in a direction parallel to the substrate 301 or the lower substrate 304 , needs to be partially removed. That is, as shown in FIG. 23 , at least the insulating layer 321 disposed on the upper surface of the element rod 320 needs to be removed to expose the upper surface of the element rod 320 for this purpose.
  • anisotropic etching such as dry etching or etch-back, may be performed.
  • the light emitting device 300 is manufactured by separating at least a portion of the device rod 320 from the substrate 301 or the lower substrate 304 by removing the mask pattern 306 .
  • the mask pattern 306 may be dissolved by an etchant such as hydrofluoric acid (HF).
  • HF hydrofluoric acid
  • the device rod 30_1 formed on the mask pattern 306 of the first mask layer 305 is chemically lifted off from the lower substrate 304 by dissolving the mask pattern 306 , and thus the light emitting device (300) can be prepared.
  • the separation surface 390_1 may be relatively flat. That is, an isolation surface that is a surface through which the device rod 320 is separated from the lower substrate 304 may be substantially flat and parallel to the upper surface of the second conductive semiconductor layer 310 .
  • the device rod 30_2 formed on the opening 307 of the first mask layer 305 is not separated. 24 , the device rod 30_2 formed on the opening 307 of the first mask layer 305 may be separated from the substrate 301 or the lower substrate 304 through a physical method.
  • the separation surface 390_2 which is a surface separated from the substrate 301 , may have a concave-convex structure, or a partially inclined region may be formed.
  • the light emitting device 300 manufactured according to an exemplary embodiment is formed on the mask pattern 306 of the first mask layer 305 disposed on a partial region of the device stack 311, and is separated by a chemical method.
  • the surface 390_1 may be flat.
  • the device rod 320 formed through crystal growth may be separated from the substrate 301 and planarization of the isolation surface 390_1 may be performed.
  • the first mask layer 305 formed on the lower substrate 304 may be removed by etching and the device rod 320 may be separated.
  • the device rod 30_1 formed on the mask pattern 306 of the first mask layer 305 may be separated by etching, and the device rod 30_2 formed on the opening 307 may be separated by a physical method.
  • the light emitting devices 300_1 and 300_2 respectively separated on the mask pattern 306 or the opening 307 may have different separation surfaces.
  • the magnetic layer 312 may be formed on the second conductive semiconductor layer 310 .
  • the magnetic layer 312 may be formed on the first conductive semiconductor layer 308 .
  • 25 is a cross-sectional view illustrating a light emitting device according to a second embodiment.
  • the second embodiment may be the same as the first embodiment except that a blocking layer 313 is added. Accordingly, in the second embodiment, components having the same shape, structure and/or function as in the first embodiment are given the same reference numerals as in the first embodiment, and detailed description is omitted.
  • the light emitting device includes a first conductive semiconductor layer 308 , an active layer 309 , a second conductive semiconductor layer 310 , a magnetic layer 312 , a blocking layer 313 , and an insulating layer. layer 321 may be included.
  • first conductive semiconductor layer 308 the active layer 309 , the second conductive semiconductor layer 310 , the magnetic layer 312 , and the insulating layer 321 have been described in the first embodiment, a detailed description thereof will be omitted.
  • the blocking layer 313 may be disposed adjacent to the magnetic layer 312 .
  • the blocking layer 313 may be disposed on the outer surface of the magnetic layer 312 .
  • the blocking layer 313 may be disposed in contact with the magnetic layer 312 .
  • at least one electrode layer may be disposed between the magnetic layer 312 and the blocking layer 313 .
  • At least one or more electrode layers may be made of metal.
  • at least one electrode layer and/or magnetic layer 312 of the light emitting device may contact one of the first electrode 501 and the second electrode 502 on the substrate 500 . Accordingly, a voltage may be applied to the second conductive semiconductor layer 310 through at least one electrode layer and the magnetic layer 312 .
  • the blocking layer 313 prevents the abnormal light emitting device 300b disposed on the substrate 500 from being positioned on the first electrode 501 or the second electrode 502 as much as possible, thereby facilitating the abnormal light emitting device 300b. It can play a role in recovery.
  • a magnetic member may be disposed around the first electrode 501 or the second electrode 502 on the substrate 500 to increase the alignment possibility of the light emitting device.
  • the magnetic member may be disposed on the same plane as the first electrode 501 or the second electrode 502 and may be in contact with the first electrode 501 or the second electrode 502 .
  • the magnetic member may be disposed on a portion of an upper surface of one of the first electrode 501 and the second electrode 502 .
  • various magnetic members may be arranged, and such an arrangement structure may also be included in the embodiment.
  • the light emitting device is attached to the magnetic member by a magnetic force between the magnetic member and the magnetic layer 312 of the light emitting device 300 , so that the light emitting device is formed between the first electrode 501 and the second electrode 501 . It may be aligned between the electrodes 502 .
  • the light emitting device may be disposed to be spaced apart from the magnetic member on the substrate 500 . Accordingly, since the light emitting device does not stick to the magnetic member, the light emitting device may be easily recovered.
  • the degree of freedom of the abnormally aligned light emitting device 300b may be increased by applying vibration by ultrasonic waves to the abnormally aligned light emitting device 300b in order to increase the recovery rate, and then may be recovered using a magnet.
  • the blocking layer 313 may be made of an insulating material or a metal material having no magnetic properties.
  • the blocking layer 313, at least one or more electrode layers, and the magnetic layer 312 are made of a metal material
  • the blocking layer 313, at least one or more electrode layers and the magnetic layer 312 are formed of the first electrode 501 or the second electrode.
  • the voltage applied to the first electrode 501 or the second electrode 502 passes through the blocking layer 313 , at least one electrode layer, and the magnetic layer 312 to the second conductive semiconductor layer 310 . ) can flow.
  • the blocking layer 313 may also be disposed adjacent to the magnetic layer 312 disposed adjacent to the first conductive semiconductor layer 308 .
  • 26 shows an apparatus for recovering a light emitting element according to a second embodiment.
  • the second embodiment may be the same as the first embodiment ( FIG. 7 ) except for the container 254 . Accordingly, in the second embodiment, components having the same shape, structure and/or function as in the first embodiment are given the same reference numerals as in the first embodiment, and detailed descriptions thereof are omitted.
  • the apparatus 250 for recovering a light emitting device may include a projecting unit 251 , a voltage applying unit 252 , a recovery unit 253 , and a container 254 .
  • the light emitting device recovery device 250 according to the second embodiment may include more components than this, but is not limited thereto.
  • the substrate 500 may be the first substrate 40 illustrated in FIG. 6 .
  • the container 254 may be filled with a liquid 255 .
  • the liquid 255 may be, for example, DI water, but is not limited thereto.
  • the amount of the liquid 255 is sufficient if the upper side of the first partition wall 503 on the substrate can be immersed in the liquid 255 filled in the container 254 .
  • a light emitting device that is not aligned on the substrate 500 may be suspended.
  • light emitting devices that are not aligned on the substrate 500 may be suspended on the surface of the liquid 255 .
  • the recovery unit 253 moves in a zigzag direction ( FIG. 10 ) or a rotational direction ( FIG. 11 )
  • the light emitting device suspended on the surface of the liquid 255 may stick to the recovery unit 253 .
  • a part of the recovery unit 253 may be moved in a predetermined direction while being immersed in the liquid 255 .
  • the lower surface of the recovery unit 253 may be moved in a predetermined direction while in contact with the surface of the liquid 255 .
  • the recovery unit 253 may be moved in a predetermined direction while being spaced upward from the surface of the liquid 255 .
  • the light emitting device 300 of the first embodiment (FIG. 7) and the second embodiment (FIG. 26) may be one of a nano light emitting device, a micro light emitting device, a disk light emitting device, a cylindrical light emitting device, and a rod light emitting device there is.
  • the dropping units 101 and 251 may drop a plurality of light emitting devices included in the droplet 107 on the substrate 500 in the form of a droplet 107 . Accordingly, as shown in FIG. 9 , a plurality of light emitting areas EA surrounded by the first barrier rib 503 as well as the non-light emitting area NA between the first and second barrier ribs 503 and 504 are provided. A droplet 107 containing a light emitting element may be filled.
  • the voltage applying units 102 and 252 apply a voltage between the first electrode 501 and the second electrode 502 provided on the substrate 500 to be between the first electrode 501 and the second electrode 502 .
  • the light emitting device may be aligned between the first electrode 501 and the second electrode 502 by the dielectrophoretic force of the electric field.
  • Some of the plurality of light emitting devices disposed on the substrate 500 may be aligned between the first electrode 501 and the second electrode 502 , and others may not be aligned.
  • the recovery units 103 and 253 are moved in a predetermined direction, light emitting devices that are not aligned on the substrate 500, that is, the abnormally aligned light emitting device 300b, may adhere to the recovery units 103 and 253 .
  • the abnormally aligned light emitting device 300b on the substrate 500 is recovered through the recovery units 103 and 253, a voltage is continuously applied to the first electrode 501 and the second electrode 502 to The alignment state of the light emitting devices aligned between the first electrode 501 and the second electrode 502 may be maintained.
  • the substrate 500 may be immersed in the liquid 255 filled in the container 254 . Accordingly, the abnormally aligned light emitting device 300b on the substrate 500 may float on the surface of the liquid 255 . At this time, as the recovery units 103 and 253 move in a predetermined direction, the abnormally aligned light emitting device 300b suspended on the surface of the liquid 255 adheres to the recovery units 103 and 253 and the abnormally aligned light emitting device ( 300b) can be recovered.
  • the predetermined direction may be a zigzag direction (FIG. 10) or a rotation direction (FIG. 11), but is not limited thereto.
  • the abnormally aligned light emitting device 300b that does not contribute to the luminance is recovered and recycled on the substrate 500 by the recovery units 103 and 253, so that the luminance can be improved and the manufacturing cost can be significantly reduced. .
  • the embodiment may be applied to a display field for displaying images or information.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

Un dispositif de récupération d'élément électroluminescent comprend : une unité de dépôt pour déposer une pluralité d'éléments électroluminescents sur un substrat; une unité d'application de tension pour appliquer une tension à une première électrode et une seconde électrode afin d'aligner la pluralité d'éléments électroluminescents abandonnés; et une unité de récupération pour récupérer les éléments électroluminescents qui ne sont pas alignés sur le substrat.
PCT/KR2020/013929 2020-10-13 2020-10-13 Dispositif de récupération d'élément électroluminescent et procédé de récupération d'élément électroluminescent l'utilisant WO2022080513A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/KR2020/013929 WO2022080513A1 (fr) 2020-10-13 2020-10-13 Dispositif de récupération d'élément électroluminescent et procédé de récupération d'élément électroluminescent l'utilisant

Applications Claiming Priority (1)

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PCT/KR2020/013929 WO2022080513A1 (fr) 2020-10-13 2020-10-13 Dispositif de récupération d'élément électroluminescent et procédé de récupération d'élément électroluminescent l'utilisant

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190042130A (ko) * 2017-10-13 2019-04-24 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20200021969A (ko) * 2020-02-11 2020-03-02 엘지전자 주식회사 반도체 발광소자의 자가조립 장치 및 방법
KR20200026780A (ko) * 2019-12-13 2020-03-11 엘지전자 주식회사 반도체 발광소자 공급 장치 및 공급 방법
KR20200026725A (ko) * 2019-08-28 2020-03-11 엘지전자 주식회사 반도체 발광소자 수거 장치 및 수거 방법
KR20200046819A (ko) * 2018-10-25 2020-05-07 엘지전자 주식회사 반도체 발광소자의 자가조립 장치 및 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190042130A (ko) * 2017-10-13 2019-04-24 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20200046819A (ko) * 2018-10-25 2020-05-07 엘지전자 주식회사 반도체 발광소자의 자가조립 장치 및 방법
KR20200026725A (ko) * 2019-08-28 2020-03-11 엘지전자 주식회사 반도체 발광소자 수거 장치 및 수거 방법
KR20200026780A (ko) * 2019-12-13 2020-03-11 엘지전자 주식회사 반도체 발광소자 공급 장치 및 공급 방법
KR20200021969A (ko) * 2020-02-11 2020-03-02 엘지전자 주식회사 반도체 발광소자의 자가조립 장치 및 방법

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