WO2021033427A1 - Cleaning method of heating member and substrate processing apparatus - Google Patents

Cleaning method of heating member and substrate processing apparatus Download PDF

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Publication number
WO2021033427A1
WO2021033427A1 PCT/JP2020/025290 JP2020025290W WO2021033427A1 WO 2021033427 A1 WO2021033427 A1 WO 2021033427A1 JP 2020025290 W JP2020025290 W JP 2020025290W WO 2021033427 A1 WO2021033427 A1 WO 2021033427A1
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WO
WIPO (PCT)
Prior art keywords
heating member
substrate
chemical solution
supply unit
gas
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PCT/JP2020/025290
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French (fr)
Japanese (ja)
Inventor
博史 阿部
学 奥谷
岳明 石津
Original Assignee
株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2021033427A1 publication Critical patent/WO2021033427A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a method for cleaning a heating member and a substrate processing apparatus.
  • a substrate processing device that processes a substrate is known.
  • a substrate processing apparatus is used for manufacturing a semiconductor substrate or a glass substrate.
  • semiconductors have been highly integrated and miniaturized, but at that time, there is a problem that the pattern formed on the substrate collapses.
  • the processing liquid obtained by treating the substrate may adhere to the irradiation portion.
  • the deposits adhering to the irradiated portion may worsen the atmosphere around the substrate and may reattach the deposits to the substrate to deteriorate the characteristics of the substrate.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a method for cleaning a heating member and a substrate processing apparatus capable of efficiently cleaning the heating member of the substrate processing apparatus.
  • the method for cleaning the heating member of the substrate processing apparatus is the step of supplying the rinse liquid to the upper surface of the heating member and the step of supplying the rinse liquid to the upper surface of the heating member so as to be mixed with the rinse liquid. It includes a step of selectively supplying the chemical solution to the outer peripheral portion of the upper surface of the heating member and a step of discharging the chemical solution from the upper surface of the heating member.
  • the method for cleaning the heating member further includes a step of supplying gas to the upper surface of the heating member after the rinse solution is supplied and before the chemical solution is selectively supplied.
  • the gas in the step of supplying the gas, is supplied to the center of the upper surface of the heating member.
  • the step of supplying the gas includes a step of forming the rinse liquid in a ring shape on the outer peripheral portion of the upper surface of the heating member.
  • the step of selectively supplying the chemical solution includes a step of forming the chemical solution in a ring shape on the outer peripheral portion of the upper surface of the heating member.
  • the step of discharging the chemical solution includes a step of moving the chemical solution to the end portion of the upper surface of the heating member and discharging the chemical solution from the end portion of the upper surface of the heating member.
  • the step of discharging the chemical solution includes a step of supplying gas to the center of the upper surface of the heating member.
  • the step of discharging the chemical solution includes a step of rotating the heating member.
  • the substrate processing apparatus includes a substrate holding unit, a heating member, a rinse liquid supply unit, a chemical liquid supply unit, and a control unit.
  • the substrate holding portion is used to hold the substrate.
  • the heating member faces the back surface of the substrate held by the substrate holding portion.
  • the control unit controls the heating member, the chemical solution supply unit, and the rinse solution supply unit. After supplying the rinse solution to the upper surface of the heating member, the control unit selectively supplies the chemical solution to the outer peripheral portion of the upper surface of the heating member, and the chemical solution is combined with the rinse solution on the upper surface of the heating member.
  • the rinse solution supply section and the chemical solution supply section are controlled so as to be mixed.
  • the substrate processing apparatus further comprises a gas supply unit, wherein the control unit is before the chemical solution is selectively supplied to the outer peripheral portion of the upper surface of the heating member. After supplying the rinse solution to the upper surface of the heating member, the gas supply unit is controlled so as to supply gas to the upper surface of the heating member.
  • control unit controls the gas supply unit so as to form the rinse liquid in a ring shape by supplying the gas to the upper surface of the heating member.
  • control unit controls the gas supply unit so as to selectively supply the chemical solution to the outer peripheral portion of the upper surface of the heating member and then supply the gas to the center of the heating member. To do.
  • the heating member is rotatably configured, and the control unit rotates the heating member after selectively supplying the chemical solution to the outer peripheral portion of the upper surface of the heating member.
  • the heating member is controlled so as to.
  • the heating member of the substrate processing apparatus can be efficiently cleaned.
  • (A) to (f) are schematic views for explaining the cleaning method of the heating member of this embodiment.
  • (A) to (e) are schematic views for demonstrating the cleaning method of the heating member of this embodiment.
  • FIG. 1 is a schematic plan view of the substrate processing apparatus 100 of the present embodiment.
  • the substrate processing device 100 processes the substrate W.
  • the substrate processing apparatus 100 processes the substrate W so as to perform at least one of etching, surface treatment, character imparting, treatment film formation, removal of at least a part of the film, and cleaning of the substrate W.
  • the substrate W includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (Field Display Display: FED), an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask. Includes substrates, ceramic substrates and solar cell substrates.
  • the substrate W has a substantially disk shape.
  • the substrate processing apparatus 100 processes the substrates W one by one.
  • the substrate processing device 100 includes a plurality of chambers 110, a fluid cabinet 100A, a fluid box 100B, a plurality of load port LPs, an indexer robot IR, a center robot CR, and a control device 101. And.
  • the control device 101 controls the load port LP, the indexer robot IR, and the center robot CR.
  • the control device 101 includes a control unit 102 and a storage unit 104.
  • Each of the load port LPs accommodates a plurality of substrates W in a stacked manner.
  • the indexer robot IR conveys the substrate W between the load port LP and the center robot CR.
  • the center robot CR conveys the substrate W between the indexer robot IR and the chamber 110.
  • Each of the chambers 110 discharges the processing liquid to the substrate W to process the substrate W.
  • the treatment solution contains a chemical solution, a rinse solution and / or an organic solvent.
  • the fluid cabinet 100A houses the treatment liquid and the gas.
  • the plurality of chambers 110 form a plurality of tower TWs (four tower TWs in FIG. 1) arranged so as to surround the center robot CR in a plan view.
  • Each tower TW includes a plurality of chambers 110 (three chambers 110 in FIG. 1) stacked one above the other.
  • Each of the fluid boxes 100B corresponds to a plurality of tower TWs.
  • the processing liquid in the fluid cabinet 100A is supplied to all the chambers 110 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B.
  • the gas in the fluid cabinet 100A is supplied to all the chambers 110 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B.
  • the substrate processing device 100 further includes a control device 101.
  • the control device 101 controls various operations of the substrate processing device 100.
  • the control device 101 includes a control unit 102 and a storage unit 104.
  • the control unit 102 has a processor.
  • the control unit 102 has, for example, a central processing unit (CPU).
  • the control unit 102 may have a general-purpose arithmetic unit.
  • the storage unit 104 stores data and computer programs.
  • the data includes recipe data.
  • the recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure of the substrate W.
  • the storage unit 104 includes a main storage device and an auxiliary storage device.
  • the main storage device is, for example, a semiconductor memory.
  • Auxiliary storage devices are, for example, semiconductor memories and / or hard disk drives.
  • the storage unit 104 may include removable media.
  • the control unit 102 executes the computer program stored in the storage unit 104 to execute the board processing operation.
  • FIG. 2 is a schematic view of the substrate processing apparatus 100.
  • the substrate processing device 100 includes a chamber 110, a substrate holding unit 120, a chemical solution supply unit 132, a rinse solution supply unit 134, an organic solvent supply unit 136, a gas supply unit 140, and a heating member 150.
  • the chamber 110 houses the substrate W.
  • the substrate holding unit 120 holds the substrate W.
  • the chemical solution supply unit 132 supplies the chemical solution to the substrate W.
  • the rinse liquid supply unit 134 supplies the rinse liquid to the substrate W.
  • the organic solvent supply unit 136 supplies the organic solvent to the substrate W.
  • the chemical solution supply section 132, the rinse solution supply section 134, and the organic solvent supply section 136 may be collectively referred to as the treatment solution supply section 130.
  • the gas supply unit 140 supplies gas to the substrate W.
  • the heating member 150 heats the substrate W.
  • the chamber 110 has a substantially box shape having an internal space.
  • the chamber 110 houses the substrate W.
  • the substrate processing apparatus 100 is a single-wafer type that processes the substrate W one by one, and the chamber 110 accommodates the substrate W one by one.
  • the substrate W is housed in the chamber 110 and processed in the chamber 110.
  • the chamber 110 houses at least a part of each of the substrate holding unit 120, the chemical solution supply unit 132, the rinsing solution supply unit 134, the organic solvent supply unit 136, and the heating member 150.
  • the board holding unit 120 holds the board W.
  • the substrate holding portion 120 holds the substrate W horizontally so that the upper surface (front surface) Wa of the substrate W faces upward and the back surface (lower surface) Wb of the substrate W faces vertically downward. Further, the substrate holding unit 120 rotates the substrate W while holding the substrate W.
  • the substrate holding portion 120 may be a sandwiching type that sandwiches the end portion of the substrate W.
  • the substrate holding unit 120 may have an arbitrary mechanism for holding the substrate W from the back surface Wb.
  • the substrate holding portion 120 may be of a vacuum type. In this case, the substrate holding portion 120 holds the substrate W horizontally by attracting the central portion of the back surface Wb of the substrate W, which is a non-device forming surface, to the upper surface.
  • the substrate holding portion 120 may combine a holding type and a vacuum type in which a plurality of chuck pins are brought into contact with the peripheral end surface of the substrate W.
  • the substrate holding portion 120 includes a spin base 121, a chuck member 122, a shaft 123, an electric motor 124, and a housing 125.
  • the chuck member 122 is provided on the spin base 121.
  • the chuck member 122 chucks the substrate W.
  • the spin base 121 is provided with a plurality of chuck members 122.
  • the shaft 123 is a hollow shaft.
  • the shaft 123 extends in the vertical direction along the rotation axis Ax.
  • a spin base 121 is coupled to the upper end of the shaft 123.
  • the substrate W is placed above the spin base 121.
  • the spin base 121 has a disk shape and supports the substrate W horizontally.
  • the shaft 123 extends downward from the central portion of the spin base 121.
  • the electric motor 124 applies a rotational force to the shaft 123.
  • the electric motor 124 rotates the substrate W and the spin base 121 around the rotation shaft Ax by rotating the shaft 123 in the rotation direction.
  • the housing 125 surrounds the shaft 123 and the electric motor 124.
  • the chemical solution supply unit 132 supplies the chemical solution to the upper surface Wa of the substrate W.
  • the upper surface Wa of the substrate W can be treated by the chemical treatment using the chemical solution.
  • the chemical treatment it is possible to perform any of etching, surface treatment, property imparting, treatment film formation, and removal of at least a part of the film on the substrate W.
  • the chemical solution is an etching solution used for etching the substrate W.
  • the chemical solution contains hydrofluoric acid.
  • hydrofluoric acid may be heated to 40 ° C. or higher and 70 ° C. or lower, or 50 ° C. or higher and 60 ° C. or lower. However, hydrofluoric acid does not have to be heated.
  • the chemical solution may further contain a hydrogen peroxide solution.
  • the chemical solution may contain SC1 (ammonia hydrogen peroxide solution mixture), SC2 (hydrochloric acid hydrogen peroxide solution mixture) or aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid).
  • the chemical solution supply unit 132 includes a pipe 132a, a valve 132b, and a nozzle 132n.
  • the nozzle 132n discharges the chemical solution onto the upper surface Wa of the substrate W.
  • the nozzle 132n is connected to the pipe 132a.
  • the chemical solution is supplied to the pipe 132a from the supply source.
  • the valve 132b opens and closes the flow path in the pipe 132a. It is preferable that the nozzle 132n is configured to be movable with respect to the substrate W.
  • the rinse liquid supply unit 134 supplies the rinse liquid to the upper surface Wa of the substrate W.
  • the rinse liquid supplied from the rinse liquid supply unit 134 is deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm). Alternatively, it may contain any of reduced water (hydrogen water).
  • the rinse liquid supply unit 134 includes a pipe 134a, a valve 134b, and a nozzle 134n.
  • the nozzle 134n discharges the rinse liquid onto the upper surface Wa of the substrate W.
  • the nozzle 134n is connected to the pipe 134a.
  • the rinse liquid is supplied to the pipe 134a from the supply source.
  • the valve 134b opens and closes the flow path in the pipe 134a.
  • the organic solvent supply unit 136 supplies the organic solvent to the upper surface Wa of the substrate W.
  • the rinse liquid on the upper surface Wa of the substrate W can be replaced with the organic solvent.
  • the volatility of the organic solvent is higher than that of the rinse solution.
  • the organic solvent supplied from the organic solvent supply unit 136 may contain isopropyl alcohol (isopropanol alcohol: IPA).
  • the organic solvent is methanol, ethanol, acetone, hydrofluoro ether (HFE), propylene glycol monoethyl ether (propylene glycol ether: PGEE), or propylene glycol monomethyl ether acetate (propylene glycol ether.acete). ) May be included.
  • the organic solvent supply unit 136 includes a pipe 136a, a valve 136b, and a nozzle 136n.
  • the nozzle 136n discharges an organic solvent onto the upper surface Wa of the substrate W.
  • the nozzle 136n is connected to the pipe 136a.
  • An organic solvent is supplied to the pipe 136a from the supply source.
  • the valve 136b opens and closes the flow path in the pipe 136a.
  • the gas supply unit 140 supplies gas to the substrate W.
  • the gas supply unit 140 supplies gas to the upper surface Wa of the substrate W.
  • the gas supplied from the gas supply unit 140 is, for example, an inert gas.
  • the gas comprises nitrogen gas.
  • the gas supply unit 140 includes a pipe 140a, a valve 140b, and a nozzle 140n.
  • the valve 140b is arranged in the pipe 140a.
  • the pipe 140a guides the gas into the chamber 110.
  • the valve 140b opens and closes the flow path in the pipe 140a.
  • the heating member 150 heats the substrate W held by the substrate holding portion 120.
  • the heating member 150 has a thin disk shape.
  • the heating member 150 is also called a hot plate.
  • the heating member 150 is arranged between the substrate W and the substrate holding portion 120. Specifically, the heating member 150 is located above the spin base 121.
  • the heating member 150 may or may not come into contact with the substrate W. Further, the heating member 150 may be movable with respect to the substrate W held by the substrate holding portion 120. When the heating member 150 is movable, it is preferable that the heating member 150 starts heating the substrate W in a state where the heating member 150 is moved so as to shorten the distance between the substrate W and the heating member 150.
  • the heating member 150 has an upper surface 150a, a back surface 150b, and a side surface 150c.
  • the side surface 150c connects the upper surface 150a and the back surface 150b.
  • the upper surface 150a of the heating member 150 faces the back surface Wb of the substrate W.
  • the back surface 150b of the heating member 150 faces the spin base 121.
  • the side surface 150c of the heating member 150 faces the chuck member 122.
  • the heating member 150 does not rotate, but the heating member 150 may be configured to rotate.
  • the heating member 150 includes a main body portion 152, a heater 154, a support portion 155, and an energizing unit 156.
  • the body portion 152 is formed using ceramic or silicon carbide (SiC).
  • the surface of the main body 152 may be hydrophobized.
  • the heater 154 is built in the main body 152.
  • the heater 154 may be a resistor.
  • the main body 152 has a disk shape extending in the horizontal direction.
  • the main body portion 152 is attached to a support portion 155 extending in the vertical direction.
  • the support portion 155 supports the main body portion 152.
  • the support portion 155 is arranged in the inner hole of the shaft 123.
  • the energizing unit 156 is electrically connected to the heater 154 via the feeder line 154L.
  • the feeder line 154L communicates the heater 154 and the energizing unit 156 via the inner hole of the shaft 123.
  • the support portion 155 may have a hollow tubular shape, and the feeder line 154L may pass through the inner hole of the support portion 155. Alternatively, the support portion 155 may have a pillar shape, and the feeder line 154L may be embedded in the support portion 155.
  • the energizing unit 156 supplies an electric current to the heater 154.
  • the heater 154 is a resistor
  • the heater 154 is heated by thermal resistance.
  • the energizing unit 156 energizes the heater 154, the temperature of the upper surface 150a of the heating member 150 rises above room temperature.
  • the temperature of the upper surface 150a of the heating member 150 is uniform in the upper surface 150a. In this way, the heating member 150 heats the substrate W.
  • the substrate processing device 100 further includes a cup 180 and an elevating unit 182.
  • the cup 180 collects the liquid scattered from the substrate W.
  • the elevating unit 182 raises and lowers the cup 180.
  • the elevating unit 182 raises the cup 180 vertically upward to the side of the substrate W.
  • the cup 180 collects the processing liquid scattered from the substrate W due to the rotation of the substrate W.
  • the elevating unit 182 causes the cup 180 to descend vertically downward from the side of the substrate W.
  • control device 101 includes a control unit 102 and a storage unit 104.
  • the control unit 102 controls the substrate holding unit 120, the chemical solution supply unit 132, the rinse solution supply unit 134, the organic solvent supply unit 136, the heating member 150 and / or the cup 180.
  • the control unit 102 controls the electric motor 124, valves 132b, 134b, 136b, 140b, energizing unit 156 and / or elevating unit 182.
  • the substrate processing apparatus 100 of the present embodiment is suitably used for processing a semiconductor substrate provided with a semiconductor.
  • the semiconductor substrate has a conductive layer and an insulating layer laminated on the base material.
  • the substrate processing apparatus 100 is suitably used for cleaning and / or processing (for example, etching, characteristic change, etc.) of the conductive layer and / or the insulating layer at the time of manufacturing a semiconductor substrate.
  • the substrate processing apparatus 100 of the present embodiment is suitably used when the substrate W is wet-etched.
  • the material of the substrate W is partially dissolved, so that the dissolved components may adhere to the inside of the substrate processing apparatus 100.
  • the heating member 150 of the substrate processing apparatus 100 can be suitably cleaned, and it is possible to suppress an adverse effect on the substrate W processed by the substrate processing apparatus 100.
  • FIG. 3 is a block diagram of the substrate processing apparatus 100.
  • the control device 101 controls various operations of the substrate processing device 100.
  • the control device 101 controls the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the gas supply unit 140, the energizing unit 156, and the elevating unit 182.
  • the control device 101 transmits a control signal to the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the gas supply unit 140, the energizing unit 156, and the elevating unit 182.
  • the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the gas supply unit 140, the energizing unit 156, and the elevating unit 182 are controlled.
  • control unit 102 controls the indexer robot IR and delivers the substrate W by the indexer robot IR.
  • the control unit 102 controls the center robot CR and delivers the substrate W by the center robot CR.
  • the center robot CR receives the unprocessed substrate W and carries the substrate W into one of the plurality of chambers 110. Further, the center robot CR receives the processed substrate W from the chamber 110 and carries out the substrate W.
  • the control unit 102 can control the valves 132b, 134b, 136b of the processing liquid supply unit 130 separately, and can switch the state of the valves 132b, 134b, 136b between the open state and the closed state. Specifically, the control unit 102 controls the valves 132b, 134b, 136b of the processing liquid supply unit 130 to open the valves 132b, 134b, 136b toward the nozzles 132n, 134n, 136n.
  • the chemical solution, rinsing solution and organic solvent flowing in the pipes 132a, 134a and 136a can be passed through.
  • control unit 102 controls the valves 132b, 134b, 136b of the processing liquid supply unit 130 to close the valves 132b, 134b, 136b, so that the pipes 132a, toward the nozzles 132n, 134n, 136n, The supply of the chemical solution, the rinsing solution and the organic solvent flowing in 134a and 136a can be stopped, respectively.
  • the control unit 102 can control the valve 140b of the gas supply unit 140 to switch the state of the valve 140b between the open state and the closed state. Specifically, the control unit 102 controls the valve 140b of the gas supply unit 140 to open the valve 140b, so that the gas flowing in the pipe 140a can be passed toward the nozzle 140n. Further, the control unit 102 can stop the supply of gas flowing in the pipe 140a toward the nozzle 140n by controlling the valve 140b of the gas supply unit 140 to close the valve 140b.
  • the control unit 102 can control the energization unit 156 to control the heating of the heating member 150. Specifically, the control unit 102 can start heating the heating member 150 by controlling the energizing unit 156 and supplying an electric current to the heater 154 of the heating member 150. On the other hand, the control unit 102 can stop the heating of the heating member 150 by controlling the energizing unit 156 and stopping the supply of the electric current to the heater 154 of the heating member 150.
  • the control unit 102 can move the cup 180 by controlling the elevating unit 182. Specifically, the control unit 102 can move the position of the cup 180 to the side of the substrate holding unit 120 by controlling the elevating unit 182 and raising the cup 180 in the vertical direction. On the other hand, the control unit 102 can move the position of the cup 180 to the retracted position by controlling the elevating unit 182 and lowering the cup 180 in the vertical direction.
  • 4 (a) to 4 (f) are schematic views for explaining the cleaning process of the heating member 150.
  • the cleaning treatment of the heating member 150 may be performed before processing the substrate W.
  • the cleaning treatment of the heating member 150 may be performed after the substrate W has been treated.
  • the substrate W is not arranged above the heating member 150.
  • the heating member 150 is used to heat the substrate W when processing the substrate W. Therefore, the substrate W can be installed above the heating member 150, but here, the substrate W is not arranged above the heating member 150.
  • the rinse liquid supply unit 134 supplies the rinse liquid R to the upper surface 150a of the heating member 150.
  • the rinse liquid supply unit 134 supplies the rinse liquid R to the vicinity of the center 150d of the upper surface 150a of the heating member 150.
  • the nozzle 134n of the rinse liquid supply unit 134 moves with respect to the heating member 150 so as to straddle the center 150d of the upper surface 150a of the heating member 150 while discharging the rinse liquid R.
  • the rinse liquid supply unit 134 supplies the rinse liquid R to the outer peripheral portion of the upper surface 150a of the heating member 150.
  • the rinse liquid supply unit 134 is used for processing the substrate W, but here, it is used for cleaning the heating member 150.
  • the chemical solution supply unit 132 selectively supplies the chemical solution Cs to the outer peripheral portion of the upper surface 150a of the heating member 150.
  • the chemical solution supply unit 132 selectively supplies the chemical solution Cs to a position outside the intermediate position between the center 150d and the end portion of the upper surface 150a of the heating member 150.
  • the chemical solution Cs mixes with the rinsing solution R and diffuses in the rinsing solution R.
  • the chemical solution supply unit 132 is used for processing the substrate W, but here, it is used for cleaning the heating member 150.
  • the chemical solution Cs is discharged from the nozzle 132n of the chemical solution supply unit 132 toward a position away from the center of the upper surface 150a of the heating member 150.
  • the rinse solution R is located outside the intermediate position between the center 150d and the end of the upper surface 150a of the heating member 150.
  • the rinse liquid R is located on the outer peripheral portion of the upper surface 150a of the heating member 150.
  • the rinse liquid R may move on the upper surface 150a of the heating member 150 by being supplied with the gas of the gas supply unit 140 and may be located on the outer peripheral portion of the upper surface 150a of the heating member 150.
  • the nozzle 134n of the rinse liquid supply unit 134 may move so as to discharge the rinse liquid R to the outer peripheral portion of the upper surface 150a of the heating member 150.
  • the rinse liquid R is formed in a ring shape on the outer peripheral portion of the upper surface 150a of the heating member 150.
  • the rinsing liquid R does not cover the center 150d of the upper surface 150a of the heating member 150 before the chemical solution Cs is supplied, but the rinsing liquid R covers the center 150d of the upper surface 150a of the heating member 150. You may cover it.
  • the chemical solution Cs is formed in a ring shape on the outer peripheral portion of the upper surface 150a of the heating member 150.
  • the chemical solution Cs is arranged in a ring shape in the region between the center 150d of the heating member 150 and the end portion of the upper surface 150a without covering the center 150d of the upper surface 150a of the heating member 150.
  • the chemical solution Cs is moved toward the end of the upper surface 150a on the upper surface 150a of the heating member 150.
  • the chemical solution Cs moves on the upper surface 150a of the heating member 150 so that the ring of the chemical solution Cs spreads.
  • the chemical solution Cs may be moved by gas.
  • the chemical solution Cs may move with the centrifugal force due to the rotation of the heating member 150.
  • the chemical solution Cs is discharged to the outside from the upper surface 150a of the heating member 150.
  • the upper surface 150a of the heating member 150 can be cleaned by the chemical solution Cs.
  • any of the chemical solution, the rinsing solution, and the organic solvent used for processing the substrate W may drip from the substrate W and adhere to the heating member.
  • these treatment liquids adhere to the heating member, impurities adhere to the outer peripheral portion of the upper surface of the heating member.
  • an etching solution for etching the substrate W is used as the chemical solution, the components removed from the substrate W by the etching process adhere to the outer peripheral portion of the upper surface of the heating member, and deposits are formed on the outer peripheral portion of the upper surface of the heating member. Easy to be done. Further, since the heating member is accompanied by a temperature change, the deposits may solidify.
  • deposits may contain metals.
  • the metal comprises any of titanium (Ti), cobalt (Co), tungsten (W) and gallium (Ga).
  • the outer peripheral portion of the upper surface 150a of the heating member 150 can be efficiently cleaned by the chemical solution selectively supplied to the outer peripheral portion of the upper surface 150a of the heating member 150. Therefore, it is possible to prevent the components of the deposits of the heating member 150 from adhering to the substrate W and deteriorating the characteristics of the substrate W.
  • the deposits contain titanium (Ti)
  • the deposits typically include titanium oxide and / or titanium nitride.
  • hydrofluoric acid it is preferable to use hydrofluoric acid as the chemical solution.
  • hydrofluoric acid and hydrogen peroxide solution as the chemical solution.
  • the metal of the deposit can be oxidized by the hydrogen peroxide solution.
  • oxides can be removed by hydrofluoric acid.
  • SC2 hydrogen peroxide solution
  • SC1 ammonia-hydrogen peroxide solution
  • SC2 may be used as the chemical solution even when the deposit contains tungsten (W).
  • aqua regia a mixture of concentrated hydrochloric acid and concentrated nitric acid
  • the deposit does not have to contain metal.
  • the deposit may be an etching residue.
  • the deposit may be a residue of silicon.
  • the deposit may be a residue of the polymer after dry etching.
  • the chemical supply unit 132 may be movable in only one direction.
  • the nozzle 132n of the chemical solution supply unit 132 may be movable along the X direction, and the chemical solution supply unit 132 may be movable on a straight line passing through the center 150d of the substrate W.
  • the chemical solution may be formed in a ring shape on the upper surface 150a of the heating member 150 by the rinsing solution and the gas.
  • FIGS. 1 to 5 are schematic views for explaining the cleaning process of the heating member 150.
  • the rinse liquid R is supplied to the heating member 150.
  • the rinse liquid supply unit 134 supplies the rinse liquid R to the center of the upper surface 150a of the heating member 150.
  • the rinse liquid R covers the center 150d of the upper surface 150a of the heating member 150.
  • the rinse liquid supply unit 134 is used for processing the substrate W, but here, it is used for cleaning the heating member 150.
  • the gas supply unit 140 supplies the gas G near the center of the upper surface 150a of the heating member 150. Due to the gas G from the gas supply unit 140, the rinse liquid R spreads from the center of the upper surface 150a of the heating member 150 to the periphery. Here, the rinse liquid R is formed in a ring shape without covering the center 150d of the upper surface 150a of the heating member 150.
  • the chemical solution Cs is selectively supplied to the outer peripheral portion of the upper surface 150a of the heating member 150.
  • the chemical solution supply unit 132 supplies the chemical solution Cs toward the rinse solution R on the upper surface 150a of the heating member 150.
  • the chemical solution supply unit 132 discharges the chemical solution Cs to the first position on the upper surface 150a of the heating member 150.
  • the chemical solution Cs mixes with the rinse solution R and moves together with the rinse solution R so as to spread along a ring shape.
  • the chemical solution Cs diffuses into the rinse solution R on the upper surface 150a of the heating member 150 to become a mixed solution, while the chemical solution Cs is , It hardly diffuses in the region of the upper surface 150a of the heating member 150 where there is no rinse solution R.
  • the chemical solution Cs is selectively supplied to the outer peripheral portion of the upper surface 150a of the heating member 150.
  • the chemical solution supply unit 132 supplies the chemical solution Cs toward the position of the rinse solution R on the upper surface 150a of the heating member 150.
  • the nozzle 132n of the chemical solution supply unit 132 discharges the chemical solution Cs after moving from the first position to the second position along the X direction.
  • the chemical solution Cs moves so as to spread along the mixed solution of the ring-shaped rinse solution R and the chemical solution Cs.
  • the gas supply unit 140 supplies the gas G to the upper surface 150a of the heating member 150.
  • the gas supply unit 140 supplies the gas G near the center of the upper surface 150a of the heating member 150. Due to the gas G supplied from the gas supply unit 140, the mixed solution of the rinse liquid R and the chemical liquid Cs moves to the end of the upper surface 150a of the heating member 150 and is discharged to the outside from the end of the upper surface 150a of the heating member 150. To. As described above, the upper surface 150a of the heating member 150 can be cleaned by the chemical solution Cs.
  • the gas G is supplied to form the rinse liquid R in a ring shape, but the present embodiment is not limited to this.
  • the rinse liquid R does not have to be formed in a ring shape.
  • the mixed solution of the rinse solution R and the chemical solution Cs is formed in a ring shape by discharging the chemical solution Cs, but the present embodiment is not limited to this.
  • the mixed solution of the rinse solution R and the chemical solution Cs does not have to be formed in a ring shape.
  • FIG. 5C the mixed solution of the rinse solution R and the chemical solution Cs does not have to be formed in a ring shape.
  • the mixed solution of the rinse solution R and the chemical solution Cs is formed in a ring shape before the gas G for discharge is supplied.
  • the chemical solution Cs can efficiently clean the outer peripheral portion of the upper surface 150a of the heating member 150.
  • the chemical solution supply unit 132 moves with respect to the substrate W along the X direction, but the chemical solution supply unit 132 moves with respect to the substrate W along the X direction and the Y direction. It may be movable. In this case, the chemical solution supply unit 132 may supply the chemical solution along the ring-shaped rinse solution R.
  • the chemical solution supply unit 132 supplies the chemical solution Cs to two positions on the upper surface 150a of the heating member 150, but the present embodiment is not limited to this.
  • the chemical solution supply unit 132 may supply the chemical solution Cs to one position with respect to the upper surface 150a of the heating member 150.
  • the chemical solution supply unit 132 may supply the chemical solution Cs to three or more positions with respect to the rinse solution R.
  • the heating member 150 may be cleaned after the treatment of the substrate W.
  • FIG. 6 is a flow chart for explaining a substrate processing method by the substrate processing apparatus of the present embodiment.
  • step Sa1 the substrate W is carried into the chamber 110.
  • the center robot CR carries the unprocessed substrate W into the chamber 110.
  • the board holding unit 120 holds the carried-in board W.
  • the substrate W has a fine pattern formed on the surface of the silicon wafer.
  • the substrate W is treated with a chemical solution.
  • the chemical solution supply unit 132 supplies the chemical solution to the substrate W.
  • the chemical solution supply unit 132 opens the valve 132b and discharges the chemical solution from the nozzle 132n.
  • the substrate holding portion 120 rotates the substrate W.
  • the chemical solution supplied near the center of the upper surface Wa of the substrate W receives centrifugal force due to the rotation of the substrate W and flows on the upper surface Wa of the substrate W toward the peripheral edge of the substrate W. As a result, the chemical solution spreads over the entire upper surface Wa of the substrate W, and the upper surface Wa of the substrate W is treated with the chemical solution.
  • the cup 180 is raised until it is located on the side of the substrate W, and collects the chemical solution scattered from the substrate W. After that, the chemical solution supply unit 132 stops the supply of the chemical solution. Next, the process proceeds to step Sa3.
  • the substrate W is rinsed with a rinse solution.
  • the rinse liquid supply unit 134 supplies the rinse liquid to the substrate W.
  • the rinse liquid supply unit 134 opens the valve 134b and discharges the rinse liquid from the nozzle 134n.
  • the substrate holding portion 120 holds the substrate W and rotates.
  • the rinse liquid supplied near the center of the upper surface Wa of the substrate W receives centrifugal force due to the rotation of the substrate W and flows on the upper surface Wa of the substrate W toward the peripheral edge of the substrate W.
  • the rinse liquid spreads over the entire upper surface Wa of the substrate W, and the upper surface Wa of the substrate W is rinsed with the rinse liquid.
  • the rinse liquid supply unit 134 stops the supply of the rinse liquid.
  • the process proceeds to step Sa4.
  • the substrate W is treated with an organic solvent.
  • the organic solvent supply unit 136 supplies the organic solvent to the substrate W.
  • the organic solvent supply unit 136 opens the valve 136b and discharges the organic solvent from the nozzle 136n.
  • the substrate holding portion 120 holds the substrate W and rotates.
  • the organic solvent supplied near the center of the upper surface Wa of the substrate W receives centrifugal force due to the rotation of the substrate W and flows on the upper surface Wa of the substrate W toward the peripheral edge of the substrate W.
  • the organic solvent spreads over the entire upper surface Wa of the substrate W, and the rinsing liquid on the upper surface Wa of the substrate W is replaced with the organic solvent.
  • the organic solvent supply unit 136 stops the supply of the organic solvent.
  • the process proceeds to step Sa5.
  • the heating member 150 heats the substrate W.
  • the back surface Wb of the substrate W is heated by heat radiation from the heating member 150 or fluid heat conduction in space between the back surface Wb of the substrate W and the upper surface 150a of the heating member 150.
  • the heating member 150 is arranged so that the upper surface 150a of the heating member 150 and the back surface Wb of the substrate W are parallel to each other. Therefore, the amount of heat per unit area given to the substrate W by the heating member 150 becomes substantially uniform over the entire area of the substrate W. At this time, the rotation of the substrate W is stopped, or the substrate W rotates at a low speed.
  • the heating member 150 heats the back surface Wb of the substrate W, the temperature of the entire surface of the upper surface Wa of the substrate W rises to a predetermined upper surface temperature during heating.
  • the top surface temperature during heating is a predetermined temperature in the range of 10 to 50 ° C. higher than the boiling point of the organic solvent.
  • the amount of heat per unit area of the heating member 150 and the distance between the back surface Wb of the substrate W and the upper surface 150a of the heating member 150 are predetermined so that the entire surface of the upper surface Wa of the substrate W rises to the upper surface temperature during heating. Is set to.
  • step Sa6 the organic solvent is removed.
  • the temperature of the upper surface Wa of the substrate W reaches the upper surface temperature during heating and a predetermined time elapses, a part of the organic solvent on the upper surface Wa of the substrate W evaporates and vaporizes, and the space above the upper surface Wa of the substrate W. A vapor film is formed on the surface. As a result, the organic solvent floats from the upper surface Wa of the substrate W.
  • the substrate W is rotated at a low speed, and gas is supplied to the upper surface Wa of the substrate W.
  • the substrate holding unit 120 rotates the substrate W at a rotation speed of 10 rpm to 500 rpm, and the valve 140b of the gas supply unit 140 opens.
  • the organic solvent at the center of the upper surface Wa of the substrate W is extruded outward and partially removed to form a small-diameter circular dry region.
  • the organic solvent is separated from the upper surface Wa of the substrate W via the vapor film, and is in a state of being easily moved along the upper surface Wa of the substrate W. Therefore, as the substrate W rotates and the gas is supplied, the dry region expands outward from the center of the upper surface Wa of the substrate W. Since the dry region extends over the entire upper surface Wa of the substrate W, the organic solvent can be removed from the upper surface Wa of the substrate W while maintaining the liquid mass state. Next, the process proceeds to step Sa7.
  • step Sa7 the substrate W is dried.
  • the substrate holding unit 120 rotates the substrate W at high speed.
  • the rotation speed of the substrate W increases up to 2500 rpm.
  • the organic solvent is shaken off from the upper surface Wa of the substrate W, and the substrate W can be dried.
  • step Sa8 the process proceeds to step Sa8.
  • the substrate W is carried out from the chamber 110.
  • the center robot CR carries out the processed substrate W in the chamber 110.
  • the substrate W can be processed by steps Sa1 to Sa8.
  • the substrate processing step Sa includes steps Sa1 to Sa8.
  • the processing proceeds to step S12.
  • the rinse liquid is supplied to the heating member 150.
  • the rinse liquid supply unit 134 supplies the rinse liquid to the upper surface 150a of the heating member 150.
  • the rinse liquid supply unit 134 supplies the rinse liquid to the center of the upper surface 150a of the heating member 150.
  • the gas supply unit 140 supplies gas to the heating member 150.
  • the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150.
  • the gas is, for example, an inert gas.
  • the gas comprises nitrogen gas. Due to the supply of gas, the rinse liquid spreads in a ring shape on the upper surface 150a of the heating member 150.
  • the cup 180 is preferably arranged at a position that covers the side of the heating member 150.
  • the process proceeds to step S16.
  • step S16 the chemical solution is supplied to the heating member 150.
  • the chemical solution supply unit 132 supplies the chemical solution toward the rinse solution on the upper surface 150a of the heating member 150.
  • the chemical solution is mixed with the rinsing solution on the upper surface 150a of the heating member 150 and diffused in the ring-shaped rinsing solution.
  • the process proceeds to step S18.
  • the gas supply unit 140 supplies gas to the heating member 150.
  • the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150.
  • the cup 180 is preferably arranged at a position that covers the side of the heating member 150.
  • the heating member 150 is cleaned by steps S12 to S18.
  • the cleaning step Sp includes steps S12 to S18.
  • the substrate W can be processed and the heating member 150 can be cleaned. According to the present embodiment, even if deposits adhere to the heating member 150 in the substrate processing step Sa, the heating member 150 can be quickly cleaned in the cleaning step Sp.
  • the heating member 150 may be cleaned.
  • the cleaning treatment of the heating member 150 may be performed every time 10 substrates W are processed.
  • the cleaning treatment of the heating member 150 may be performed after the treated substrate W is discharged after a lapse of a predetermined time from the start of the treatment of the substrate W.
  • the cleaning treatment of the heating member 150 may be started after the treated substrate W is discharged 5 hours after the treatment of the substrate W is started.
  • the heating member 150 may be cleaned next time when the drive of the substrate processing device 100 is started. Alternatively, immediately before stopping the driving of the substrate processing apparatus 100, the heating member 150 may be cleaned after the substrate W is carried out.
  • the heating member 150 is subjected to a cleaning treatment of the heating member 150 after the substrate W is treated, but the present embodiment is not limited to this.
  • the heating member 150 may be cleaned before processing the substrate W.
  • the nozzles 132n, 134n, 136n and 140n are provided separately, but the present embodiment is not limited to this. At least a part of the nozzles 132n, 134n, 136n and 140n may be integrated. Further, in the above description with reference to FIGS. 1 to 6, the liquid and the gas are supplied only to the upper surface Wa of the substrate W, but the present embodiment is not limited to this. At least one of a liquid and a gas may be supplied to the back surface Wb of the substrate W.
  • FIG. 7 is a schematic view of the substrate processing apparatus 100 of the present embodiment.
  • the nozzle 132n and the nozzle 134n can be moved integrally, the nozzle 136n and the nozzle 140n are integrated, and the heating member 150 can move up and down with respect to the substrate W.
  • It has the same configuration as the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2 except that the gas is supplied to the back surface Wb of the substrate W, in order to avoid redundancy. Duplicate description is omitted.
  • the substrate processing device 100 of the present embodiment further includes an arm member A1 to which the nozzle 132n of the chemical solution supply unit 132 and the nozzle 134n of the rinse solution supply unit 134 are attached.
  • a moving unit Ta is attached to the arm member A1. The moving unit Ta moves the arm member A1.
  • the moving unit Ta moves the arm member A1 between the discharge position and the retracted position.
  • the arm member A1 When the arm member A1 is in the discharge position, the arm member A1 is located above the substrate W.
  • the arm member A1 discharges the chemical solution and the rinse solution toward the upper surface Wa of the substrate W.
  • the arm member A1 When the arm member A1 is in the retracted position, the arm member A1 is located radially outside the substrate W with respect to the substrate W.
  • the substrate processing apparatus 100 further includes a nozzle N1 in which a nozzle 136n of the organic solvent supply unit 136 and a nozzle 140n of the gas supply unit 140 are integrated.
  • a moving unit Tn is attached to the nozzle N1. The moving unit Tn moves the nozzle N1.
  • the moving unit Tn moves the nozzle N1 between the discharge position and the retracted position.
  • the nozzle N1 When the nozzle N1 is in the discharge position, the nozzle N1 is located above the substrate W.
  • the nozzle N1 discharges the organic solvent and the gas toward the upper surface Wa of the substrate W.
  • the nozzle N1 When the nozzle N1 is in the retracted position, the nozzle N1 is located radially outside the substrate W with respect to the substrate W.
  • the substrate processing apparatus 100 shown in FIG. 7 further includes a gas supply unit 140A.
  • the gas supply unit 140A supplies gas to the substrate W.
  • the gas supply unit 140A supplies gas to the back surface Wb of the substrate W.
  • the gas supplied from the gas supply unit 140A is, for example, an inert gas.
  • the gas comprises nitrogen gas.
  • the gas supply unit 140A includes a pipe 140c, a valve 140d, and a nozzle 140m.
  • the valve 140d is arranged in the pipe 140c.
  • the pipe 140c guides the gas into the chamber 110.
  • the valve 140d opens and closes the pipe 140c.
  • the pipe 140c penetrates the inner hole of the shaft 123 and the heating member 150.
  • the pipe 140c may penetrate the inner hole of the support portion 155.
  • the pipe 140c penetrates the center of the upper surface 150a of the heating member 150. Therefore, the nozzle 140m is located at the center of the upper surface 150a of the heating member 150. Gas is supplied from the center of the upper surface 150a of the heating member 150 toward the back surface Wb of the substrate W.
  • the substrate processing device 100 further includes an elevating unit 158 that elevates and elevates the heating member 150.
  • the elevating unit 158 moves the heating member 150 up and down relative to the substrate holding portion 120.
  • the elevating unit 158 raises the heating member 150 so that the heating member 150 approaches the substrate W.
  • the elevating unit 158 can raise the heating member 150 to a position (close position) where the heating member 150 is close to the substrate W. Further, the elevating unit 158 can lower the heating member 150 to a position (separated position) away from the substrate W with respect to the ascending position.
  • the heating member 150 When the heating member 150 rises to a close position, the upper surface 150a of the heating member 150 approaches the back surface Wb of the substrate W to a specific distance (typically 0.5 to 3 mm). When the heating member 150 reaches a close position, the back surface Wb of the substrate W is heated by heat radiation from the heating member 150 or by fluid heat conduction in the space between the back surface Wb of the substrate W and the upper surface 150a of the heating member 150. Will be done. It is preferable that the heating member 150 is arranged at a close position so that the upper surface 150a of the heating member 150 and the back surface Wb of the substrate W are parallel to each other.
  • the heating member 150 is raised to a position close to the substrate W here, the heating member 150 may be raised to a position where the heating member 150 is in contact with the substrate W.
  • the nozzle 132n and the nozzle 134n are attached to the arm member A1. Since the chemical solution and the rinse solution are often used continuously, the time required for moving the nozzle can be shortened. Further, in the substrate processing apparatus 100, a nozzle N1 in which a nozzle 136n and a nozzle 140n are integrated is provided. Since the organic solvent and gas are often used continuously, the time required for moving the nozzle can be shortened.
  • the gas supply unit 140A can supply gas to the back surface Wb of the substrate W. Therefore, it is possible to prevent the deposits from adhering to the back surface Wb and / or the heating member 150 of the substrate W.
  • the elevating unit 158 can shorten the distance between the heating member 150 and the substrate W. Therefore, the heating member 150 can efficiently heat the substrate W with less electric power.
  • the chemical solution supply unit 132 supplied one type of chemical solution, but the present embodiment is not limited to this.
  • the chemical solution supply unit 132 may supply a plurality of chemical solutions separately.
  • FIG. 8 is a schematic view of the substrate processing apparatus 100 of the present embodiment.
  • the substrate processing apparatus 100 shown in FIG. 8 is the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2, except that the chemical solution supply unit 132 includes the first chemical solution supply unit 132A and the second chemical solution supply unit 132B. It has the same configuration as the above, and duplicated description is omitted to avoid redundancy.
  • the chemical solution supply unit 132 includes the first chemical solution supply unit 132A and the second chemical solution supply unit 132B.
  • the first chemical supply unit 132A supplies the first chemical solution.
  • the second chemical supply unit 132B supplies a second chemical solution different from the first chemical solution.
  • the first chemical supply unit 132A includes a pipe 132c, a valve 132d, and a nozzle 132p.
  • the nozzle 132p discharges the chemical solution onto the upper surface Wa of the substrate W.
  • the nozzle 132p is connected to the pipe 132c.
  • the first chemical solution is supplied to the pipe 132c from the supply source.
  • the valve 132d opens and closes the flow path in the pipe 132c.
  • the second chemical supply unit 132B includes a pipe 132e, a valve 132f, and a nozzle 132q.
  • the nozzle 132q discharges the chemical solution onto the upper surface Wa of the substrate W.
  • the nozzle 132q is connected to the pipe 132e.
  • the second chemical solution is supplied to the pipe 132e from the supply source.
  • the valve 132f opens and closes the flow path in the pipe 132e.
  • the nozzle 132p and the nozzle 132q are attached to the arm member A1 together with the nozzle 134n.
  • the arm member A1 can be moved by the moving unit Ta.
  • the first chemical solution supply unit 132A and the second chemical solution supply unit 132B are suitably used for cleaning the heating member 150.
  • one of the first chemical solution and the second chemical solution is a solution that changes the composition of the deposit
  • the other of the first chemical solution and the second chemical solution is a solution for peeling off the deposit whose composition has changed.
  • the deposit contains titanium (Ti)
  • hydrogen peroxide solution may be used as the first chemical solution
  • hydrofluoric acid may be used as the second chemical solution.
  • the first chemical solution and the second chemical solution are not discharged at the same time, and may be discharged at different timings.
  • the first chemical solution and the second chemical solution may be discharged at the same time.
  • the deposit contains cobalt (Co)
  • hydrogen peroxide solution may be used as the first chemical solution and hydrochloric acid may be used as the second chemical solution.
  • the deposit contains tungsten (W)
  • hydrogen peroxide solution may be used as the first chemical solution and hydrochloric acid may be used as the second chemical solution.
  • the deposit contains tungsten (W)
  • hydrogen peroxide solution may be used as the first chemical solution and ammonia water may be used as the second chemical solution.
  • gallium (Ga) concentrated hydrochloric acid may be used as the first chemical solution and concentrated nitric acid may be used as the second chemical solution.
  • the first chemical solution and the second chemical solution are supplied at different timings.
  • FIG. 9 is a flow chart for explaining a cleaning method of the heating member 150.
  • the rinse liquid is supplied to the heating member 150.
  • the rinse liquid supply unit 134 supplies the rinse liquid to the upper surface 150a of the heating member 150.
  • the rinse liquid supply unit 134 supplies the rinse liquid to the center of the upper surface 150a of the heating member 150.
  • the gas supply unit 140 supplies gas to the heating member 150.
  • the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. Due to the supply of gas, the rinse liquid spreads in a ring shape on the upper surface 150a of the heating member 150.
  • the cup 180 is preferably arranged at a position that covers the side of the heating member 150.
  • the first chemical solution is supplied to the first position of the heating member 150.
  • the first chemical solution contains a hydrogen peroxide solution.
  • the first chemical supply unit 132A supplies the first chemical solution toward the rinse liquid on the upper surface 150a of the heating member 150.
  • the first chemical solution mixes with the rinsing solution on the upper surface 150a of the heating member 150 and diffuses in the ring-shaped rinsing solution.
  • the process proceeds to step S48.
  • the first chemical solution is supplied to the second position of the heating member 150.
  • the first chemical supply unit 132A supplies the first chemical solution toward the rinse liquid on the upper surface 150a of the heating member 150.
  • the first chemical solution mixes with the rinsing solution on the upper surface 150a of the heating member 150 and diffuses in the ring-shaped rinsing solution.
  • the process proceeds to step S50.
  • the gas supply unit 140 supplies gas to the heating member 150.
  • the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150.
  • the rinsing solution and the first chemical solution on the upper surface 150a of the heating member 150 are discharged.
  • the process proceeds to step S52.
  • the rinse liquid is supplied to the heating member 150.
  • the rinse liquid supply unit 134 supplies the rinse liquid to the upper surface 150a of the heating member 150.
  • the rinse liquid supply unit 134 supplies the rinse liquid to the center of the upper surface 150a of the heating member 150.
  • the gas supply unit 140 supplies gas to the heating member 150.
  • the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. Due to the supply of gas, the rinse liquid spreads in a ring shape on the upper surface 150a of the heating member 150.
  • the cup 180 is preferably arranged at a position that covers the side of the heating member 150.
  • the second chemical solution is supplied to the first position of the heating member 150.
  • the second chemical solution contains hydrofluoric acid.
  • the second chemical supply unit 132B supplies the second chemical solution toward the rinse liquid on the upper surface 150a of the heating member 150.
  • the second chemical solution is mixed with the rinsing solution on the upper surface 150a of the heating member 150 and diffused in the ring-shaped rinsing solution.
  • the process proceeds to step S58.
  • the second chemical solution is supplied to the second position of the heating member 150.
  • the second chemical supply unit 132B supplies the second chemical solution toward the rinse liquid on the upper surface 150a of the heating member 150.
  • the second chemical solution is mixed with the rinsing solution on the upper surface 150a of the heating member 150 and diffused in the ring-shaped rinsing solution.
  • the process proceeds to step S60.
  • the gas supply unit 140 supplies gas to the heating member 150.
  • the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150.
  • the rinsing solution and the second chemical solution on the upper surface 150a of the heating member 150 are discharged.
  • the upper surface of the heating member 150 can be cleaned.
  • the first chemical solution containing hydrogen peroxide solution was used, and then the second chemical solution containing hydrofluoric acid was used, but the present embodiment is not limited to this.
  • the second chemical solution containing hydrofluoric acid may be used first, and then the first chemical solution containing hydrogen peroxide solution may be used.
  • the first chemical solution containing hydrogen peroxide solution when the metal is exposed on the surface of the impurity, it is preferable to use the first chemical solution containing hydrogen peroxide solution and then the second chemical solution containing hydrofluoric acid.
  • the metal oxide is exposed on the surface of the impurity, it is preferable to use the second chemical solution containing hydrofluoric acid and then the first chemical solution containing hydrogen peroxide solution.
  • FIG. 10 is a schematic view of the substrate processing apparatus 100 of the present embodiment.
  • the substrate processing apparatus 100 shown in FIG. 10 is the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2, except that the substrate processing apparatus 100 includes a support portion and a lift pin and a part of the chuck member 122 is rotatable. It has a similar configuration, and duplicate descriptions are omitted to avoid redundancy.
  • the substrate holding portion 120 further includes a support shaft 126 and a lift pin 127 connected to the support shaft 126.
  • the support shaft 126 has a cylindrical shape extending in the vertical direction, and the support shaft 126 is arranged in an inner hole of the shaft 123.
  • a support portion 155 is arranged in the inner hole of the support shaft 126.
  • At least three lift pins 127 extend from the support shaft 126.
  • the lift pin 127 extends radially outward above the support shaft 126 and extends vertically upward at its tip.
  • the heating member 150 is provided with at least three through holes 150h.
  • the through hole 150h connects the upper surface 150a and the back surface 150b of the heating member 150.
  • the position, size and number of the through holes 150h are provided corresponding to the position, size and number of the lift pins 127, and the through holes 150h are configured so as to be able to pass through the lift pins 127.
  • the substrate processing device 100 of the present embodiment further includes an elevating unit 158A capable of elevating and lowering the support shaft 126.
  • the lift pin 127 penetrates the heating member 150 as the elevating unit 158A moves the support shaft 126.
  • the elevating unit 158A descends the support shaft 126, the lift pin 127 does not protrude from the upper surface 150a of the heating member 150.
  • the elevating unit 158A raises the support shaft 126, the lift pin 127 protrudes from the upper surface 150a of the heating member 150.
  • the upper end of the lift pin 127 is located vertically above the upper end of the chuck member 122.
  • the upper end of the lift pin 127 can be positioned vertically above the upper end of the chuck member 122. Therefore, when the center robot CR carries in and / or carries out the substrate W to the chamber 110, the center robot CR can pass the substrate W so as to be supported by the lift pin 127.
  • the chuck member 122 has a main body portion 122a and a plurality of rotating portions 122b.
  • the main body portion 122a extends vertically upward with respect to the spin base 121.
  • the rotating portion 122b is provided at the tip vertically above the main body portion 122a.
  • the rotating portion 122b is rotatable with respect to the main body portion 122a in the circumferential direction of the substrate W. Therefore, when the plurality of rotating portions 122b face inward, the substrate W is supported by the rotating portions 122b. Further, when the plurality of rotating portions 122b face outward, the substrate W is not supported by the rotating portions 122b.
  • the elevating unit 158A lowers the lift pin 127 holding the substrate W with the plurality of rotating portions 122b facing outward, the substrate W can be placed on the upper surface 150a of the heating member 150. As a result, the heat of the heating member 150 can be sufficiently transferred to the substrate W.
  • the heater 154 of the heating member 150 is a resistor, but the present embodiment is not limited to this.
  • the heating member 150 may be irradiated with light during heating.
  • FIG. 12 is a schematic view of the substrate processing apparatus 100 of the present embodiment.
  • the substrate processing apparatus 100 shown in FIG. 11 has the same configuration as the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2, except that the heating member 150 irradiates light during heating. Duplicate description is omitted to avoid redundancy.
  • the heating member 150 is arranged below the substrate W held by the substrate holding portion 120.
  • the heating member 150 has a plurality of lamps 150L and is provided above the substrate holding portion 120. When each lamp 150L is turned on, the back surface Wb of the substrate W held by the substrate holding portion 120 is irradiated with the light from the lamp 150L.
  • the heating member 150 may be, for example, a plurality of straight tube type lamps 150L provided in parallel.
  • the heating member 150 may be a plurality of light bulb type lamps 150L provided in an array.
  • the lamp 150L for example, a halogen lamp or a xenon flash lamp can be used.
  • the heating member 150 various irradiation members that irradiate the substrate W on the substrate holding portion 120 with electromagnetic waves can be used.
  • a far-infrared heater that irradiates far infrared rays or a microwave heater that irradiates microwaves on the substrate W on the substrate holding portion 120 may be used.
  • the substrate processing device 100 may start the cleaning treatment of the heating member 150 according to the deposits on the upper surface 150a of the heating member 150.
  • the substrate processing device 100 may take an image of the upper surface 150a of the heating member 150 and start cleaning the upper surface 150a of the heating member 150.
  • FIG. 12 is a schematic view of the substrate processing apparatus 100 of the present embodiment.
  • the substrate processing apparatus 100 shown in FIG. 12 has the same configuration as the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2 except that the imaging unit 190 is further provided, in order to avoid redundancy. The description duplicated in is omitted.
  • the imaging unit 190 is arranged in the chamber 110.
  • the image capturing unit 190 images the upper surface 150a of the heating member 150 to generate image data.
  • the control device 101 starts the cleaning process of the heating member 150 according to the imaging result of the imaging unit 190. For example, the control device 101 determines from the image data generated by the imaging unit 190 whether or not deposits are attached to the upper surface 150a of the heating member 150, and the deposits are attached to the upper surface 150a of the heating member 150. If so, the cleaning process of the heating member 150 is started.
  • FIG. 13 is a flowchart for explaining a substrate processing method by the substrate processing apparatus of the present embodiment.
  • step Sb1 the imaging unit 190 images the upper surface 150a of the heating member 150. After that, the process proceeds to step Sb2.
  • step Sb2 the control unit 102 determines whether or not to clean the heating member 150 based on the imaging result of the imaging unit 190. For example, the control unit 102 analyzes the image data generated by the image pickup unit 190 to determine whether or not deposits are attached to the heating member 150. When the color of the upper surface 150a of the heating member 150 shown in the image data is different from the color of the initial heating member 150, the control unit 102 determines that deposits are attached to the heating member 150. Alternatively, when the shape of the heating member 150 shown in the image data is different from the shape of the initial heating member 150, the control unit 102 determines that deposits are attached to the heating member 150.
  • step Sb2 If it is determined that the heating member 150 is to be cleaned (Yes in step Sb2), the process proceeds to step Sp1. When it is determined that the heating member 150 is not cleaned (No in step Sb2), the process proceeds to the substrate processing step Sa.
  • step Sp1 the heating member 150 is cleaned.
  • the control unit 102 executes steps S12 to S18 of FIG. 6 to clean the heating member 150. After that, the processing proceeds to the substrate processing step Sa.
  • the substrate W is processed.
  • the control unit 102 executes the steps Sa1 to Sa8 of FIG. 6 to process the substrate W. After that, the process proceeds to step Sb3.
  • step Sb3 the imaging unit 190 images the upper surface 150a of the heating member 150. After that, the process proceeds to step Sb4.
  • step Sb4 the control unit 102 determines whether or not to clean the heating member 150 based on the imaging result of the imaging unit 190. For example, the control unit 102 analyzes the image data generated by the image pickup unit 190 to determine whether or not deposits are attached to the heating member 150. If it is determined that the heating member 150 is to be cleaned (Yes in step Sb4), the process proceeds to step Sp2. If it is determined that the heating member 150 is not cleaned (No in step Sb4), the process proceeds to step Sb5.
  • step Sp2 the heating member 150 is cleaned.
  • the control unit 102 executes steps S12 to S18 of FIG. 6 to clean the heating member 150. After that, the process proceeds to step Sb5.
  • step Sb5 the control unit 102 determines whether there is another substrate W to be processed. For example, when it is determined that there is a substrate W to be processed (Yes in step Sb5), the processing returns to the substrate processing step Sa. When it is determined that there is no substrate W to be processed (No in step Sb5), the processing ends.
  • the substrate treatment and the cleaning treatment of the heating member 150 can be executed. According to the present embodiment, in order to determine whether or not to perform the cleaning process of the heating member 150 based on the result of imaging by the imaging unit 190, the heating member 150 can be cleaned as needed.
  • the substrate W rotates while the heating member 150 does not rotate, but the present embodiment is not limited to this.
  • the heating member 150 may rotate.
  • FIG. 14 is a schematic view of the substrate processing apparatus 100 of the present embodiment.
  • the substrate processing apparatus 100 shown in FIG. 14 has the same configuration as the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2 except that the heating member 150 rotates, in order to avoid redundancy. The description duplicated in is omitted.
  • the substrate processing device 100 further includes an electric motor 159 for rotating the heating member 150.
  • the electric motor 159 is connected to the support portion 155.
  • the heating member 150 is rotated by the electric motor 159.
  • the control unit 102 rotates the heating member 150 by controlling the electric motor 159.
  • the heating member 150 can be rotated by the electric motor 159, it is not necessary to supply gas to the upper surface 150a of the heating member 150 in the cleaning process of the heating member 150. Specifically, after supplying the chemical solution to the outer peripheral portion of the upper surface 150a of the heating member 150, the heating member 150 rotates so that the upper surface 150a of the heating member 150 does not need to supply gas to the upper surface 150a of the heating member 150.
  • the chemical solution can be discharged from.
  • the heating member 150 was cleaned with a chemical solution, but the present embodiment is not limited to this.
  • the heating member 150 may be cleaned by abrasion in addition to the chemical solution.
  • the heating member 150 is worn, it is preferable that the heating member 150 is worn in a rotated state.
  • the substrate processing apparatus 100 shown in FIG. 15 has the same configuration as the substrate processing apparatus 100 described above with reference to FIG. 14, except that the scrub member 192 is further provided, and is duplicated in order to avoid redundancy. The description to be made is omitted.
  • the substrate processing device 100 further includes a scrub member 192.
  • the scrub member 192 scrubs the upper surface 150a of the heating member 150 with a chemical solution in the cleaning step.
  • the head of the scrub member 192 is made of a soft material such as sponge, non-woven fabric, polyurethane foam or polishing tape.
  • the scrub member 192 can remove the deposits on the upper surface 150a of the heating member 150 using a chemical solution.
  • the scrub member 192 moves relative to the heating member 150.
  • the scrub member 192 may move with respect to the upper surface 150a of the heating member 150 along the X and / or Y directions.
  • the scrub member 192 may be kept in contact with the upper surface 150a of the heating member 150, while the heating member 150 may rotate.
  • the scrub member 192 may be used not only in the cleaning step of the heating member 150 but also in the processing step of the substrate W.
  • the present invention is suitably used for cleaning a heating member for heating a substrate.
  • Substrate processing device 110 Chamber 120 Substrate holding unit 132 Chemical solution supply unit 134 Rinse solution supply unit 136 Organic solvent supply unit 140 Gas supply unit W Substrate

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Abstract

A cleaning method of a heating member (150) for cleaning the heating member (150) of a substrate processing apparatus (100) includes a step of supplying a rinse liquid to an upper surface (150a) of the heating member (150), a step of selectively supplying a chemical solution to the outer peripheral portion of the upper surface (150a) of the heating member (150) so as to mix the chemical solution with the rinse liquid on the upper surface (150a) of the heating member (150), and a step of discharging the chemical solution from the upper surface (150a) of the heating member (150).

Description

加熱部材の清浄方法および基板処理装置Cleaning method of heating members and substrate processing equipment
　本発明は、加熱部材の清浄方法および基板処理装置に関する。 The present invention relates to a method for cleaning a heating member and a substrate processing apparatus.
　基板を処理する基板処理装置が知られている。例えば、基板処理装置は半導体基板またはガラス基板の製造に用いられる。近年、半導体の高集積化および微細化が進められているが、その際に、基板に形成されたパターンが倒壊することが問題となっている。 A substrate processing device that processes a substrate is known. For example, a substrate processing apparatus is used for manufacturing a semiconductor substrate or a glass substrate. In recent years, semiconductors have been highly integrated and miniaturized, but at that time, there is a problem that the pattern formed on the substrate collapses.
　そのため、基板内のパターンの倒壊を抑止するために、基板の処理に用いた純水をイソプロピルアルコール（ＩＰＡ）に置換して乾燥させることが検討されている。ＩＰＡの乾燥時には、加熱部材を用いて基板からＩＰＡを乾燥させる（例えば、特許文献１参照）。特許文献１の基板処理装置では、基板の近傍にランプを備えた照射部を配置することで基板からＩＰＡの乾燥を促進している。 Therefore, in order to prevent the pattern in the substrate from collapsing, it is being studied to replace the pure water used for processing the substrate with isopropyl alcohol (IPA) and dry it. When the IPA is dried, the IPA is dried from the substrate using a heating member (see, for example, Patent Document 1). In the substrate processing apparatus of Patent Document 1, drying of IPA from the substrate is promoted by arranging an irradiation unit provided with a lamp in the vicinity of the substrate.
特開２０１５－２９０４１号公報JP-A-2015-29041
　しかしながら、基板の近傍に照射部を配置する場合、基板を処理した処理液が照射部に付着することがある。照射部に付着した付着物は、基板周囲の雰囲気を悪化させるとともに、付着物が基板に再付着して基板の特性を低下させるおそれがある。 However, when the irradiation portion is arranged in the vicinity of the substrate, the processing liquid obtained by treating the substrate may adhere to the irradiation portion. The deposits adhering to the irradiated portion may worsen the atmosphere around the substrate and may reattach the deposits to the substrate to deteriorate the characteristics of the substrate.
　本発明は上記課題に鑑みてなされたものであり、その目的は、基板処理装置の加熱部材を効率的に清浄可能な加熱部材の清浄方法および基板処理装置を提供することにある。 The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for cleaning a heating member and a substrate processing apparatus capable of efficiently cleaning the heating member of the substrate processing apparatus.
　本発明の一局面によれば、基板処理装置の加熱部材の清浄方法は、前記加熱部材の上面にリンス液を供給する工程と、前記加熱部材の前記上面において前記リンス液と混ざるように、前記加熱部材の前記上面の外周部に薬液を選択的に供給する工程と、前記加熱部材の前記上面から前記薬液を排出する工程とを包含する。 According to one aspect of the present invention, the method for cleaning the heating member of the substrate processing apparatus is the step of supplying the rinse liquid to the upper surface of the heating member and the step of supplying the rinse liquid to the upper surface of the heating member so as to be mixed with the rinse liquid. It includes a step of selectively supplying the chemical solution to the outer peripheral portion of the upper surface of the heating member and a step of discharging the chemical solution from the upper surface of the heating member.
　ある実施形態において、前記加熱部材の清浄方法は、前記リンス液を供給した後、前記薬液を選択的に供給する前に、前記加熱部材の前記上面にガスを供給する工程をさらに包含する。 In certain embodiments, the method for cleaning the heating member further includes a step of supplying gas to the upper surface of the heating member after the rinse solution is supplied and before the chemical solution is selectively supplied.
　ある実施形態では、前記ガスを供給する工程において、前記加熱部材の前記上面の中央に前記ガスを供給する。 In a certain embodiment, in the step of supplying the gas, the gas is supplied to the center of the upper surface of the heating member.
　ある実施形態において、前記ガスを供給する工程は、前記加熱部材の前記上面の前記外周部において前記リンス液をリング状に形成する工程を含む。 In a certain embodiment, the step of supplying the gas includes a step of forming the rinse liquid in a ring shape on the outer peripheral portion of the upper surface of the heating member.
　ある実施形態において、前記薬液を選択的に供給する工程は、前記加熱部材の前記上面の外周部において前記薬液をリング状に形成する工程を含む。 In a certain embodiment, the step of selectively supplying the chemical solution includes a step of forming the chemical solution in a ring shape on the outer peripheral portion of the upper surface of the heating member.
　ある実施形態において、前記薬液を排出する工程は、前記薬液を前記加熱部材の前記上面の端部に移動させて前記加熱部材の前記上面の端部から前記薬液を排出する工程を含む。 In a certain embodiment, the step of discharging the chemical solution includes a step of moving the chemical solution to the end portion of the upper surface of the heating member and discharging the chemical solution from the end portion of the upper surface of the heating member.
　ある実施形態において、前記薬液を排出する工程は、前記加熱部材の前記上面の中央にガスを供給する工程を含む。 In a certain embodiment, the step of discharging the chemical solution includes a step of supplying gas to the center of the upper surface of the heating member.
　ある実施形態において、前記薬液を排出する工程は、前記加熱部材を回転する工程を含む。 In a certain embodiment, the step of discharging the chemical solution includes a step of rotating the heating member.
　本発明の別の局面によれば、基板処理装置は、基板保持部と、加熱部材と、リンス液供給部と、薬液供給部と、制御部とを備える。前記基板保持部は、基板を保持するために用いられる。前記加熱部材は、前記基板保持部に保持された前記基板の裏面に対向する。前記制御部は、前記加熱部材、前記薬液供給部および前記リンス液供給部を制御する。前記制御部は、前記加熱部材の上面にリンス液を供給した後、前記加熱部材の前記上面の外周部に薬液を選択的に供給して前記加熱部材の前記上面において前記薬液が前記リンス液と混ざるように前記リンス液供給部および前記薬液供給部を制御する。 According to another aspect of the present invention, the substrate processing apparatus includes a substrate holding unit, a heating member, a rinse liquid supply unit, a chemical liquid supply unit, and a control unit. The substrate holding portion is used to hold the substrate. The heating member faces the back surface of the substrate held by the substrate holding portion. The control unit controls the heating member, the chemical solution supply unit, and the rinse solution supply unit. After supplying the rinse solution to the upper surface of the heating member, the control unit selectively supplies the chemical solution to the outer peripheral portion of the upper surface of the heating member, and the chemical solution is combined with the rinse solution on the upper surface of the heating member. The rinse solution supply section and the chemical solution supply section are controlled so as to be mixed.
　ある実施形態において、前記基板処理装置は、ガス供給部をさらに備え、前記制御部は、前記加熱部材の前記上面の前記外周部に前記薬液を選択的に供給する前であって、前記加熱部材の前記上面に前記リンス液を供給した後に、前記加熱部材の前記上面にガスを供給するように前記ガス供給部を制御する。 In certain embodiments, the substrate processing apparatus further comprises a gas supply unit, wherein the control unit is before the chemical solution is selectively supplied to the outer peripheral portion of the upper surface of the heating member. After supplying the rinse solution to the upper surface of the heating member, the gas supply unit is controlled so as to supply gas to the upper surface of the heating member.
　ある実施形態において、前記制御部は、前記加熱部材の前記上面に前記ガスを供給することによって前記リンス液をリング状に形成するように前記ガス供給部を制御する。 In a certain embodiment, the control unit controls the gas supply unit so as to form the rinse liquid in a ring shape by supplying the gas to the upper surface of the heating member.
　ある実施形態において、前記制御部は、前記加熱部材の前記上面の前記外周部に前記薬液を選択的に供給した後に、前記加熱部材の中央に前記ガスを供給するように前記ガス供給部を制御する。 In certain embodiments, the control unit controls the gas supply unit so as to selectively supply the chemical solution to the outer peripheral portion of the upper surface of the heating member and then supply the gas to the center of the heating member. To do.
　ある実施形態において、前記加熱部材は、回転可能に構成されており、前記制御部は、前記加熱部材の前記上面の前記外周部に前記薬液を選択的に供給した後に、前記加熱部材を回転するように前記加熱部材を制御する。 In certain embodiments, the heating member is rotatably configured, and the control unit rotates the heating member after selectively supplying the chemical solution to the outer peripheral portion of the upper surface of the heating member. The heating member is controlled so as to.
　本発明によれば、基板処理装置の加熱部材を効率的に清浄にできる。 According to the present invention, the heating member of the substrate processing apparatus can be efficiently cleaned.
本実施形態の基板処理装置の模式図である。It is a schematic diagram of the substrate processing apparatus of this embodiment. 本実施形態の基板処理装置の模式図である。It is a schematic diagram of the substrate processing apparatus of this embodiment. 本実施形態の基板処理装置のブロック図である。It is a block diagram of the substrate processing apparatus of this embodiment. （ａ）～（ｆ）は、本実施形態の加熱部材の清浄方法を説明するための模式図である。(A) to (f) are schematic views for explaining the cleaning method of the heating member of this embodiment. （ａ）～（ｅ）は、本実施形態の加熱部材の清浄方法を説明するための模式図である。(A) to (e) are schematic views for demonstrating the cleaning method of the heating member of this embodiment. 本実施形態の基板処理装置による基板処理方法を説明するためのフロー図である。It is a flow diagram for demonstrating the substrate processing method by the substrate processing apparatus of this embodiment. 本実施形態の基板処理装置の模式図である。It is a schematic diagram of the substrate processing apparatus of this embodiment. 本実施形態の基板処理装置の模式図である。It is a schematic diagram of the substrate processing apparatus of this embodiment. 本実施形態の加熱部材の清浄方法を説明するためのフロー図である。It is a flow figure for demonstrating the cleaning method of the heating member of this embodiment. 本実施形態の基板処理装置の模式図である。It is a schematic diagram of the substrate processing apparatus of this embodiment. 本実施形態の基板処理装置の模式図である。It is a schematic diagram of the substrate processing apparatus of this embodiment. 本実施形態の基板処理装置の模式図である。It is a schematic diagram of the substrate processing apparatus of this embodiment. 本実施形態の基板処理装置による基板処理方法を説明するためのフローチャートである。It is a flowchart for demonstrating the substrate processing method by the substrate processing apparatus of this embodiment. 本実施形態の基板処理装置の模式図である。It is a schematic diagram of the substrate processing apparatus of this embodiment. 本実施形態の基板処理装置の模式図である。It is a schematic diagram of the substrate processing apparatus of this embodiment.
　以下、図面を参照して、本発明による基板処理装置および加熱部材の清浄方法の実施形態を説明する。なお、図中、同一または相当部分については同一の参照符号を付して説明を繰り返さない。なお、本願明細書では、発明の理解を容易にするため、互いに直交するＸ軸、Ｙ軸およびＺ軸を記載することがある。典型的には、Ｘ軸およびＹ軸は水平方向に平行であり、Ｚ軸は鉛直方向に平行である。 Hereinafter, embodiments of the substrate processing apparatus and the method for cleaning the heating member according to the present invention will be described with reference to the drawings. In the drawings, the same or corresponding parts are designated by the same reference numerals and the description is not repeated. In addition, in the specification of the present application, in order to facilitate understanding of the invention, X-axis, Y-axis and Z-axis which are orthogonal to each other may be described. Typically, the X and Y axes are horizontally parallel and the Z axis is vertically parallel.
　まず、図１を参照して、本発明による基板処理装置１００の実施形態を説明する。図１は、本実施形態の基板処理装置１００の模式的な平面図である。 First, an embodiment of the substrate processing apparatus 100 according to the present invention will be described with reference to FIG. FIG. 1 is a schematic plan view of the substrate processing apparatus 100 of the present embodiment.
　基板処理装置１００は、基板Ｗを処理する。基板処理装置１００は、基板Ｗに対して、エッチング、表面処理、特性付与、処理膜形成、膜の少なくとも一部の除去および洗浄のうちの少なくとも１つを行うように基板Ｗを処理する。 The substrate processing device 100 processes the substrate W. The substrate processing apparatus 100 processes the substrate W so as to perform at least one of etching, surface treatment, character imparting, treatment film formation, removal of at least a part of the film, and cleaning of the substrate W.
　基板Ｗは、例えば、半導体ウエハ、液晶表示装置用基板、プラズマディスプレイ用基板、電界放出ディスプレイ（Ｆｉｅｌｄ　Ｅｍｉｓｓｉｏｎ　Ｄｉｓｐｌａｙ：ＦＥＤ）用基板、光ディスク用基板、磁気ディスク用基板、光磁気ディスク用基板、フォトマスク用基板、セラミック基板および太陽電池用基板を含む。例えば、基板Ｗは略円板状である。ここでは、基板処理装置１００は、基板Ｗを一枚ずつ処理する。 The substrate W includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (Field Display Display: FED), an optical disk substrate, a magnetic disk substrate, a magneto-optical disk substrate, and a photomask. Includes substrates, ceramic substrates and solar cell substrates. For example, the substrate W has a substantially disk shape. Here, the substrate processing apparatus 100 processes the substrates W one by one.
　図１に示すように、基板処理装置１００は、複数のチャンバー１１０と、流体キャビネット１００Ａと、流体ボックス１００Ｂと、複数のロードポートＬＰと、インデクサーロボットＩＲと、センターロボットＣＲと、制御装置１０１とを備える。制御装置１０１は、ロードポートＬＰ、インデクサーロボットＩＲおよびセンターロボットＣＲを制御する。制御装置１０１は、制御部１０２および記憶部１０４を含む。 As shown in FIG. 1, the substrate processing device 100 includes a plurality of chambers 110, a fluid cabinet 100A, a fluid box 100B, a plurality of load port LPs, an indexer robot IR, a center robot CR, and a control device 101. And. The control device 101 controls the load port LP, the indexer robot IR, and the center robot CR. The control device 101 includes a control unit 102 and a storage unit 104.
　ロードポートＬＰの各々は、複数枚の基板Ｗを積層して収容する。インデクサーロボットＩＲは、ロードポートＬＰとセンターロボットＣＲとの間で基板Ｗを搬送する。センターロボットＣＲは、インデクサーロボットＩＲとチャンバー１１０との間で基板Ｗを搬送する。チャンバー１１０の各々は、基板Ｗに処理液を吐出して、基板Ｗを処理する。処理液は、薬液、リンス液および／または有機溶剤を含む。流体キャビネット１００Ａは、処理液およびガスを収容する。 Each of the load port LPs accommodates a plurality of substrates W in a stacked manner. The indexer robot IR conveys the substrate W between the load port LP and the center robot CR. The center robot CR conveys the substrate W between the indexer robot IR and the chamber 110. Each of the chambers 110 discharges the processing liquid to the substrate W to process the substrate W. The treatment solution contains a chemical solution, a rinse solution and / or an organic solvent. The fluid cabinet 100A houses the treatment liquid and the gas.
　具体的には、複数のチャンバー１１０は、平面視においてセンターロボットＣＲを取り囲むように配置された複数のタワーＴＷ（図１では４つのタワーＴＷ）を形成している。各タワーＴＷは、上下に積層された複数のチャンバー１１０（図１では３つのチャンバー１１０）を含む。流体ボックス１００Ｂは、それぞれ、複数のタワーＴＷに対応している。流体キャビネット１００Ａ内の処理液は、いずれかの流体ボックス１００Ｂを介して、流体ボックス１００Ｂに対応するタワーＴＷに含まれる全てのチャンバー１１０に供給される。また、流体キャビネット１００Ａ内のガスは、いずれかの流体ボックス１００Ｂを介して、流体ボックス１００Ｂに対応するタワーＴＷに含まれる全てのチャンバー１１０に供給される。 Specifically, the plurality of chambers 110 form a plurality of tower TWs (four tower TWs in FIG. 1) arranged so as to surround the center robot CR in a plan view. Each tower TW includes a plurality of chambers 110 (three chambers 110 in FIG. 1) stacked one above the other. Each of the fluid boxes 100B corresponds to a plurality of tower TWs. The processing liquid in the fluid cabinet 100A is supplied to all the chambers 110 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B. Further, the gas in the fluid cabinet 100A is supplied to all the chambers 110 included in the tower TW corresponding to the fluid box 100B via one of the fluid boxes 100B.
　基板処理装置１００は、制御装置１０１をさらに備える。制御装置１０１は、基板処理装置１００の各種動作を制御する。 The substrate processing device 100 further includes a control device 101. The control device 101 controls various operations of the substrate processing device 100.
　制御装置１０１は、制御部１０２および記憶部１０４を含む。制御部１０２は、プロセッサーを有する。制御部１０２は、例えば、中央処理演算機（Ｃｅｎｔｒａｌ　Ｐｒｏｃｅｓｓｉｎｇ　Ｕｎｉｔ：ＣＰＵ）を有する。または、制御部１０２は、汎用演算機を有してもよい。 The control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 has a processor. The control unit 102 has, for example, a central processing unit (CPU). Alternatively, the control unit 102 may have a general-purpose arithmetic unit.
　記憶部１０４は、データおよびコンピュータプログラムを記憶する。データは、レシピデータを含む。レシピデータは、複数のレシピを示す情報を含む。複数のレシピの各々は、基板Ｗの処理内容および処理手順を規定する。 The storage unit 104 stores data and computer programs. The data includes recipe data. The recipe data includes information indicating a plurality of recipes. Each of the plurality of recipes defines the processing content and processing procedure of the substrate W.
　記憶部１０４は、主記憶装置と、補助記憶装置とを含む。主記憶装置は、例えば、半導体メモリーである。補助記憶装置は、例えば、半導体メモリーおよび／またはハードディスクドライブである。記憶部１０４はリムーバブルメディアを含んでいてもよい。制御部１０２は、記憶部１０４の記憶しているコンピュータプログラムを実行して、基板処理動作を実行する。 The storage unit 104 includes a main storage device and an auxiliary storage device. The main storage device is, for example, a semiconductor memory. Auxiliary storage devices are, for example, semiconductor memories and / or hard disk drives. The storage unit 104 may include removable media. The control unit 102 executes the computer program stored in the storage unit 104 to execute the board processing operation.
　次に、図２を参照して、本実施形態の基板処理装置１００を説明する。図２は、基板処理装置１００の模式図である。 Next, the substrate processing apparatus 100 of the present embodiment will be described with reference to FIG. FIG. 2 is a schematic view of the substrate processing apparatus 100.
　基板処理装置１００は、チャンバー１１０と、基板保持部１２０と、薬液供給部１３２と、リンス液供給部１３４と、有機溶剤供給部１３６と、ガス供給部１４０と、加熱部材１５０とを備える。チャンバー１１０は、基板Ｗを収容する。基板保持部１２０は、基板Ｗを保持する。薬液供給部１３２は、基板Ｗに薬液を供給する。リンス液供給部１３４は、基板Ｗにリンス液を供給する。有機溶剤供給部１３６は、基板Ｗに有機溶剤を供給する。なお、本明細書において、薬液供給部１３２、リンス液供給部１３４および有機溶剤供給部１３６を総称して処理液供給部１３０と記載することがある。ガス供給部１４０は、基板Ｗにガスを供給する。加熱部材１５０は、基板Ｗを加熱する。 The substrate processing device 100 includes a chamber 110, a substrate holding unit 120, a chemical solution supply unit 132, a rinse solution supply unit 134, an organic solvent supply unit 136, a gas supply unit 140, and a heating member 150. The chamber 110 houses the substrate W. The substrate holding unit 120 holds the substrate W. The chemical solution supply unit 132 supplies the chemical solution to the substrate W. The rinse liquid supply unit 134 supplies the rinse liquid to the substrate W. The organic solvent supply unit 136 supplies the organic solvent to the substrate W. In this specification, the chemical solution supply section 132, the rinse solution supply section 134, and the organic solvent supply section 136 may be collectively referred to as the treatment solution supply section 130. The gas supply unit 140 supplies gas to the substrate W. The heating member 150 heats the substrate W.
　チャンバー１１０は、内部空間を有する略箱形状である。チャンバー１１０は、基板Ｗを収容する。ここでは、基板処理装置１００は基板Ｗを１枚ずつ処理する枚葉型であり、チャンバー１１０には基板Ｗが１枚ずつ収容される。基板Ｗは、チャンバー１１０内に収容され、チャンバー１１０内で処理される。チャンバー１１０には、基板保持部１２０、薬液供給部１３２、リンス液供給部１３４、有機溶剤供給部１３６および加熱部材１５０のそれぞれの少なくとも一部が収容される。 The chamber 110 has a substantially box shape having an internal space. The chamber 110 houses the substrate W. Here, the substrate processing apparatus 100 is a single-wafer type that processes the substrate W one by one, and the chamber 110 accommodates the substrate W one by one. The substrate W is housed in the chamber 110 and processed in the chamber 110. The chamber 110 houses at least a part of each of the substrate holding unit 120, the chemical solution supply unit 132, the rinsing solution supply unit 134, the organic solvent supply unit 136, and the heating member 150.
　基板保持部１２０は、基板Ｗを保持する。基板保持部１２０は、基板Ｗの上面（表面）Ｗａを上方に向け、基板Ｗの裏面（下面）Ｗｂを鉛直下方に向くように基板Ｗを水平に保持する。また、基板保持部１２０は、基板Ｗを保持した状態で基板Ｗを回転させる。 The board holding unit 120 holds the board W. The substrate holding portion 120 holds the substrate W horizontally so that the upper surface (front surface) Wa of the substrate W faces upward and the back surface (lower surface) Wb of the substrate W faces vertically downward. Further, the substrate holding unit 120 rotates the substrate W while holding the substrate W.
　例えば、基板保持部１２０は、基板Ｗの端部を挟持する挟持式であってもよい。あるいは、基板保持部１２０は、基板Ｗを裏面Ｗｂから保持する任意の機構を有してもよい。例えば、基板保持部１２０は、バキューム式であってもよい。この場合、基板保持部１２０は、非デバイス形成面である基板Ｗの裏面Ｗｂの中央部を上面に吸着させることにより基板Ｗを水平に保持する。あるいは、基板保持部１２０は、複数のチャックピンを基板Ｗの周端面に接触させる挟持式とバキューム式とを組み合わせてもよい。 For example, the substrate holding portion 120 may be a sandwiching type that sandwiches the end portion of the substrate W. Alternatively, the substrate holding unit 120 may have an arbitrary mechanism for holding the substrate W from the back surface Wb. For example, the substrate holding portion 120 may be of a vacuum type. In this case, the substrate holding portion 120 holds the substrate W horizontally by attracting the central portion of the back surface Wb of the substrate W, which is a non-device forming surface, to the upper surface. Alternatively, the substrate holding portion 120 may combine a holding type and a vacuum type in which a plurality of chuck pins are brought into contact with the peripheral end surface of the substrate W.
　例えば、基板保持部１２０は、スピンベース１２１と、チャック部材１２２と、シャフト１２３と、電動モーター１２４と、ハウジング１２５とを含む。チャック部材１２２は、スピンベース１２１に設けられる。チャック部材１２２は、基板Ｗをチャックする。典型的には、スピンベース１２１には、複数のチャック部材１２２が設けられる。 For example, the substrate holding portion 120 includes a spin base 121, a chuck member 122, a shaft 123, an electric motor 124, and a housing 125. The chuck member 122 is provided on the spin base 121. The chuck member 122 chucks the substrate W. Typically, the spin base 121 is provided with a plurality of chuck members 122.
　シャフト１２３は、中空軸である。シャフト１２３は、回転軸Ａｘに沿って鉛直方向に延びている。シャフト１２３の上端には、スピンベース１２１が結合されている。基板Ｗは、スピンベース１２１の上方に載置される。 The shaft 123 is a hollow shaft. The shaft 123 extends in the vertical direction along the rotation axis Ax. A spin base 121 is coupled to the upper end of the shaft 123. The substrate W is placed above the spin base 121.
　スピンベース１２１は、円板状であり、基板Ｗを水平に支持する。シャフト１２３は、スピンベース１２１の中央部から下方に延びる。電動モーター１２４は、シャフト１２３に回転力を与える。電動モーター１２４は、シャフト１２３を回転方向に回転させることにより、回転軸Ａｘを中心に基板Ｗおよびスピンベース１２１を回転させる。ハウジング１２５は、シャフト１２３および電動モーター１２４を取り囲んでいる。 The spin base 121 has a disk shape and supports the substrate W horizontally. The shaft 123 extends downward from the central portion of the spin base 121. The electric motor 124 applies a rotational force to the shaft 123. The electric motor 124 rotates the substrate W and the spin base 121 around the rotation shaft Ax by rotating the shaft 123 in the rotation direction. The housing 125 surrounds the shaft 123 and the electric motor 124.
　薬液供給部１３２は、基板Ｗの上面Ｗａに薬液を供給する。薬液を用いた薬液処理により、基板Ｗの上面Ｗａを処理できる。薬液処理により、基板Ｗに対して、エッチング、表面処理、特性付与、処理膜形成および膜の少なくとも一部の除去のいずれかを行うことが可能である。典型的には、薬液は、基板Ｗのエッチング処理に用いられるエッチング液である。 The chemical solution supply unit 132 supplies the chemical solution to the upper surface Wa of the substrate W. The upper surface Wa of the substrate W can be treated by the chemical treatment using the chemical solution. By the chemical treatment, it is possible to perform any of etching, surface treatment, property imparting, treatment film formation, and removal of at least a part of the film on the substrate W. Typically, the chemical solution is an etching solution used for etching the substrate W.
　薬液は、フッ酸を含む。例えば、フッ酸は、４０℃以上７０℃以下に加熱されてもよく、５０℃以上６０℃以下に加熱されてもよい。ただし、フッ酸は、加熱されなくてもよい。なお、薬液は、過酸化水素水をさらに含んでもよい。また、薬液は、ＳＣ１（アンモニア過酸化水素水混合液）、ＳＣ２（塩酸過酸化水素水混合液）または王水（濃塩酸と濃硝酸との混合物）を含んでもよい。 The chemical solution contains hydrofluoric acid. For example, hydrofluoric acid may be heated to 40 ° C. or higher and 70 ° C. or lower, or 50 ° C. or higher and 60 ° C. or lower. However, hydrofluoric acid does not have to be heated. The chemical solution may further contain a hydrogen peroxide solution. Further, the chemical solution may contain SC1 (ammonia hydrogen peroxide solution mixture), SC2 (hydrochloric acid hydrogen peroxide solution mixture) or aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid).
　薬液供給部１３２は、配管１３２ａと、バルブ１３２ｂと、ノズル１３２ｎとを含む。ノズル１３２ｎは基板Ｗの上面Ｗａに薬液を吐出する。ノズル１３２ｎは、配管１３２ａに接続される。配管１３２ａには、供給源から薬液が供給される。バルブ１３２ｂは、配管１３２ａ内の流路を開閉する。ノズル１３２ｎは、基板Ｗに対して移動可能に構成されていることが好ましい。 The chemical solution supply unit 132 includes a pipe 132a, a valve 132b, and a nozzle 132n. The nozzle 132n discharges the chemical solution onto the upper surface Wa of the substrate W. The nozzle 132n is connected to the pipe 132a. The chemical solution is supplied to the pipe 132a from the supply source. The valve 132b opens and closes the flow path in the pipe 132a. It is preferable that the nozzle 132n is configured to be movable with respect to the substrate W.
　リンス液供給部１３４は、基板Ｗの上面Ｗａにリンス液を供給する。リンス液を用いたリンス処理により、基板Ｗの上面Ｗａに付着した薬液および不純物等を洗い流すことができる。リンス液供給部１３４から供給されるリンス液は、脱イオン水（Ｄｅｉｏｎｉｚｅｄ　Ｗａｔｅｒ：ＤＩＷ）、炭酸水、電解イオン水、オゾン水、アンモニア水、希釈濃度（例えば、１０ｐｐｍ～１００ｐｐｍ程度）の塩酸水、または、還元水（水素水）のいずれかを含んでもよい。 The rinse liquid supply unit 134 supplies the rinse liquid to the upper surface Wa of the substrate W. By the rinsing treatment using the rinsing solution, the chemical solution and impurities adhering to the upper surface Wa of the substrate W can be washed away. The rinse liquid supplied from the rinse liquid supply unit 134 is deionized water (DIW), carbonated water, electrolytic ionized water, ozone water, ammonia water, hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm). Alternatively, it may contain any of reduced water (hydrogen water).
　リンス液供給部１３４は、配管１３４ａと、バルブ１３４ｂと、ノズル１３４ｎとを含む。ノズル１３４ｎは、基板Ｗの上面Ｗａにリンス液を吐出する。ノズル１３４ｎは、配管１３４ａに接続される。配管１３４ａには、供給源からリンス液が供給される。バルブ１３４ｂは、配管１３４ａ内の流路を開閉する。 The rinse liquid supply unit 134 includes a pipe 134a, a valve 134b, and a nozzle 134n. The nozzle 134n discharges the rinse liquid onto the upper surface Wa of the substrate W. The nozzle 134n is connected to the pipe 134a. The rinse liquid is supplied to the pipe 134a from the supply source. The valve 134b opens and closes the flow path in the pipe 134a.
　有機溶剤供給部１３６は、基板Ｗの上面Ｗａに有機溶剤を供給する。有機溶剤を用いた有機溶剤処理により、基板Ｗの上面Ｗａのリンス液を有機溶剤に置換できる。典型的には、有機溶剤の揮発性は、リンス液の揮発性よりも高い。 The organic solvent supply unit 136 supplies the organic solvent to the upper surface Wa of the substrate W. By the organic solvent treatment using an organic solvent, the rinse liquid on the upper surface Wa of the substrate W can be replaced with the organic solvent. Typically, the volatility of the organic solvent is higher than that of the rinse solution.
　有機溶剤供給部１３６から供給される有機溶剤は、イソプロピルアルコール（ｉｓｏｐｒｏｐｙｌ　ａｌｃｏｈｏｌ：ＩＰＡ）を含んでもよい。あるいは、有機溶剤は、メタノール、エタノール、アセトン、ハイドロフルオロエーテル（ｈｙｄｒｏｆｌｕｏｒｏ　ｅｔｈｅｒ：ＨＦＥ）、プロピレングリコールモノエチルエーテル（ｐｒｏｐｙｌｅｎｅ　ｇｌｙｃｏｌ　ｅｔｈｙｌ　ｅｔｈｅｒ：ＰＧＥＥ）、または、プロピレングリコールモノメチルエーテルアセテート（ｐｒｏｐｙｌｅｎｅｇｌｙｃｏｌ　ｍｏｎｏｍｅｔｈｙｌ　ｅｔｈｅｒ　ａｃｅｔａｔｅ：ＰＧＭＥＡ）を含んでもよい。 The organic solvent supplied from the organic solvent supply unit 136 may contain isopropyl alcohol (isopropanol alcohol: IPA). Alternatively, the organic solvent is methanol, ethanol, acetone, hydrofluoro ether (HFE), propylene glycol monoethyl ether (propylene glycol ether: PGEE), or propylene glycol monomethyl ether acetate (propylene glycol ether.acete). ) May be included.
　有機溶剤供給部１３６は、配管１３６ａと、バルブ１３６ｂと、ノズル１３６ｎとを含む。ノズル１３６ｎは基板Ｗの上面Ｗａに有機溶剤を吐出する。ノズル１３６ｎは、配管１３６ａに接続される。配管１３６ａには、供給源から有機溶剤が供給される。バルブ１３６ｂは、配管１３６ａ内の流路を開閉する。 The organic solvent supply unit 136 includes a pipe 136a, a valve 136b, and a nozzle 136n. The nozzle 136n discharges an organic solvent onto the upper surface Wa of the substrate W. The nozzle 136n is connected to the pipe 136a. An organic solvent is supplied to the pipe 136a from the supply source. The valve 136b opens and closes the flow path in the pipe 136a.
　ガス供給部１４０は、基板Ｗにガスを供給する。例えば、ガス供給部１４０は、基板Ｗの上面Ｗａにガスを供給する。ガス供給部１４０から供給されるガスは、例えば不活性ガスである。一例では、ガスは、窒素ガスを含む。 The gas supply unit 140 supplies gas to the substrate W. For example, the gas supply unit 140 supplies gas to the upper surface Wa of the substrate W. The gas supplied from the gas supply unit 140 is, for example, an inert gas. In one example, the gas comprises nitrogen gas.
　ガス供給部１４０は、配管１４０ａと、バルブ１４０ｂと、ノズル１４０ｎとを含む。バルブ１４０ｂは、配管１４０ａに配置される。配管１４０ａは、ガスをチャンバー１１０内に導く。バルブ１４０ｂは、配管１４０ａ内の流路を開閉する。 The gas supply unit 140 includes a pipe 140a, a valve 140b, and a nozzle 140n. The valve 140b is arranged in the pipe 140a. The pipe 140a guides the gas into the chamber 110. The valve 140b opens and closes the flow path in the pipe 140a.
　加熱部材１５０は、基板保持部１２０に保持された基板Ｗを加熱する。加熱部材１５０は、薄板の円板形状を有している。加熱部材１５０は、ホットプレートとも呼ばれる。加熱部材１５０は、基板Ｗと基板保持部１２０との間に配置される。詳細には、加熱部材１５０は、スピンベース１２１の上方に配置される。 The heating member 150 heats the substrate W held by the substrate holding portion 120. The heating member 150 has a thin disk shape. The heating member 150 is also called a hot plate. The heating member 150 is arranged between the substrate W and the substrate holding portion 120. Specifically, the heating member 150 is located above the spin base 121.
　加熱部材１５０は、基板Ｗと接触してもよく、基板Ｗと接触しなくてもよい。また、加熱部材１５０は、基板保持部１２０に保持された基板Ｗに対して移動可能であってもよい。加熱部材１５０が移動可能である場合、基板Ｗと加熱部材１５０との間の距離が短くなるように移動した状態で加熱部材１５０が基板Ｗの加熱を開始することが好ましい。 The heating member 150 may or may not come into contact with the substrate W. Further, the heating member 150 may be movable with respect to the substrate W held by the substrate holding portion 120. When the heating member 150 is movable, it is preferable that the heating member 150 starts heating the substrate W in a state where the heating member 150 is moved so as to shorten the distance between the substrate W and the heating member 150.
　加熱部材１５０は、上面１５０ａと、裏面１５０ｂと、側面１５０ｃとを有する。側面１５０ｃは、上面１５０ａと裏面１５０ｂとを連絡する。加熱部材１５０の上面１５０ａは、基板Ｗの裏面Ｗｂと対向する。また、加熱部材１５０の裏面１５０ｂは、スピンベース１２１と対向する。さらに、加熱部材１５０の側面１５０ｃは、チャック部材１２２と対向する。なお、ここでは、加熱部材１５０は、回転しないが、加熱部材１５０は、回転するように構成されてもよい。 The heating member 150 has an upper surface 150a, a back surface 150b, and a side surface 150c. The side surface 150c connects the upper surface 150a and the back surface 150b. The upper surface 150a of the heating member 150 faces the back surface Wb of the substrate W. Further, the back surface 150b of the heating member 150 faces the spin base 121. Further, the side surface 150c of the heating member 150 faces the chuck member 122. Here, the heating member 150 does not rotate, but the heating member 150 may be configured to rotate.
　加熱部材１５０は、本体部１５２と、ヒーター１５４と、支持部１５５と、通電ユニット１５６とを含む。例えば、本体部１５２は、セラミックまたは炭化ケイ素（ＳｉＣ）を用いて形成される。本体部１５２の表面は、疎水化されていてもよい。ヒーター１５４は、本体部１５２に内蔵されている。ヒーター１５４は、抵抗体であってもよい。 The heating member 150 includes a main body portion 152, a heater 154, a support portion 155, and an energizing unit 156. For example, the body portion 152 is formed using ceramic or silicon carbide (SiC). The surface of the main body 152 may be hydrophobized. The heater 154 is built in the main body 152. The heater 154 may be a resistor.
　本体部１５２は、水平方向に延びた円板形状を有する。本体部１５２は、鉛直方向に延びた支持部１５５に取り付けられる。支持部１５５は、本体部１５２を支持する。支持部１５５は、シャフト１２３の内孔に配置される。 The main body 152 has a disk shape extending in the horizontal direction. The main body portion 152 is attached to a support portion 155 extending in the vertical direction. The support portion 155 supports the main body portion 152. The support portion 155 is arranged in the inner hole of the shaft 123.
　通電ユニット１５６は、給電線１５４Ｌを介してヒーター１５４と電気的に接続する。給電線１５４Ｌは、シャフト１２３の内孔を介してヒーター１５４と通電ユニット１５６とを連絡する。支持部１５５は、中空筒形状であってもよく、給電線１５４Ｌは、支持部１５５の内孔を通過してもよい。または、支持部１５５は、柱形状であってもよく、給電線１５４Ｌは、支持部１５５に埋没されていてもよい。 The energizing unit 156 is electrically connected to the heater 154 via the feeder line 154L. The feeder line 154L communicates the heater 154 and the energizing unit 156 via the inner hole of the shaft 123. The support portion 155 may have a hollow tubular shape, and the feeder line 154L may pass through the inner hole of the support portion 155. Alternatively, the support portion 155 may have a pillar shape, and the feeder line 154L may be embedded in the support portion 155.
　通電ユニット１５６は、ヒーター１５４に電流を供給する。ヒーター１５４が抵抗体である場合、ヒーター１５４は、熱抵抗によって加熱する。通電ユニット１５６がヒーター１５４に通電することによって、加熱部材１５０の上面１５０ａの温度が室温よりも上昇する。例えば、加熱部材１５０の上面１５０ａの温度は、上面１５０ａは面内で均一である。このようにして、加熱部材１５０は、基板Ｗを加熱する。 The energizing unit 156 supplies an electric current to the heater 154. When the heater 154 is a resistor, the heater 154 is heated by thermal resistance. When the energizing unit 156 energizes the heater 154, the temperature of the upper surface 150a of the heating member 150 rises above room temperature. For example, the temperature of the upper surface 150a of the heating member 150 is uniform in the upper surface 150a. In this way, the heating member 150 heats the substrate W.
　基板処理装置１００は、カップ１８０および昇降ユニット１８２をさらに備える。カップ１８０は、基板Ｗから飛散した液体を回収する。昇降ユニット１８２は、カップ１８０を昇降する。昇降ユニット１８２により、カップ１８０は、基板Ｗの側方にまで鉛直上方に上昇する。この場合、カップ１８０は、基板Ｗの回転によって基板Ｗから飛散する処理液を回収する。また、昇降ユニット１８２により、カップ１８０は、基板Ｗの側方から鉛直下方に下降する。 The substrate processing device 100 further includes a cup 180 and an elevating unit 182. The cup 180 collects the liquid scattered from the substrate W. The elevating unit 182 raises and lowers the cup 180. The elevating unit 182 raises the cup 180 vertically upward to the side of the substrate W. In this case, the cup 180 collects the processing liquid scattered from the substrate W due to the rotation of the substrate W. Further, the elevating unit 182 causes the cup 180 to descend vertically downward from the side of the substrate W.
　上述したように、制御装置１０１は、制御部１０２および記憶部１０４を含む。制御部１０２は、基板保持部１２０、薬液供給部１３２、リンス液供給部１３４、有機溶剤供給部１３６、加熱部材１５０および／またはカップ１８０を制御する。一例では、制御部１０２は、電動モーター１２４、バルブ１３２ｂ、１３４ｂ、１３６ｂ、１４０ｂ、通電ユニット１５６および／または昇降ユニット１８２を制御する。 As described above, the control device 101 includes a control unit 102 and a storage unit 104. The control unit 102 controls the substrate holding unit 120, the chemical solution supply unit 132, the rinse solution supply unit 134, the organic solvent supply unit 136, the heating member 150 and / or the cup 180. In one example, the control unit 102 controls the electric motor 124, valves 132b, 134b, 136b, 140b, energizing unit 156 and / or elevating unit 182.
　本実施形態の基板処理装置１００は、半導体の設けられた半導体基板の処理に好適に用いられる。典型的には、半導体基板には、基材の上に導電層および絶縁層が積層されている。基板処理装置１００は、半導体基板の製造時に、導電層および／または絶縁層の洗浄および／または加工（例えば、エッチング、特性変化等）に好適に用いられる。 The substrate processing apparatus 100 of the present embodiment is suitably used for processing a semiconductor substrate provided with a semiconductor. Typically, the semiconductor substrate has a conductive layer and an insulating layer laminated on the base material. The substrate processing apparatus 100 is suitably used for cleaning and / or processing (for example, etching, characteristic change, etc.) of the conductive layer and / or the insulating layer at the time of manufacturing a semiconductor substrate.
　本実施形態の基板処理装置１００は、基板Ｗをウエットエッチング処理する際に好適に用いられる。基板Ｗをウエットエッチング処理すると、基板Ｗの材料が部分的に溶解するため、溶解した成分が基板処理装置１００内に付着することがある。この場合、付着物が基板Ｗに付着すると、基板Ｗの特性が低下してしまう。しかしながら、本実施形態によれば、基板処理装置１００の加熱部材１５０を好適に清浄にでき、基板処理装置１００によって処理される基板Ｗに悪影響が生じることを抑制できる。 The substrate processing apparatus 100 of the present embodiment is suitably used when the substrate W is wet-etched. When the substrate W is wet-etched, the material of the substrate W is partially dissolved, so that the dissolved components may adhere to the inside of the substrate processing apparatus 100. In this case, if the deposits adhere to the substrate W, the characteristics of the substrate W deteriorate. However, according to this embodiment, the heating member 150 of the substrate processing apparatus 100 can be suitably cleaned, and it is possible to suppress an adverse effect on the substrate W processed by the substrate processing apparatus 100.
　次に、図１から図３を参照して、本実施形態の基板処理装置１００を説明する。図３は、基板処理装置１００のブロック図である。 Next, the substrate processing apparatus 100 of the present embodiment will be described with reference to FIGS. 1 to 3. FIG. 3 is a block diagram of the substrate processing apparatus 100.
　図３に示すように、制御装置１０１は、基板処理装置１００の各種動作を制御する。制御装置１０１は、インデクサーロボットＩＲ、センターロボットＣＲ、基板保持部１２０と、処理液供給部１３０、ガス供給部１４０と、通電ユニット１５６と、昇降ユニット１８２とを制御する。具体的には、制御装置１０１は、インデクサーロボットＩＲ、センターロボットＣＲ、基板保持部１２０と、処理液供給部１３０、ガス供給部１４０、通電ユニット１５６、昇降ユニット１８２とに制御信号を送信することによって、インデクサーロボットＩＲ、センターロボットＣＲ、基板保持部１２０と、処理液供給部１３０、ガス供給部１４０、通電ユニット１５６、昇降ユニット１８２とを制御する。 As shown in FIG. 3, the control device 101 controls various operations of the substrate processing device 100. The control device 101 controls the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the gas supply unit 140, the energizing unit 156, and the elevating unit 182. Specifically, the control device 101 transmits a control signal to the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the gas supply unit 140, the energizing unit 156, and the elevating unit 182. Thereby, the indexer robot IR, the center robot CR, the substrate holding unit 120, the processing liquid supply unit 130, the gas supply unit 140, the energizing unit 156, and the elevating unit 182 are controlled.
　具体的には、制御部１０２は、インデクサーロボットＩＲを制御して、インデクサーロボットＩＲによって基板Ｗを受け渡しする。 Specifically, the control unit 102 controls the indexer robot IR and delivers the substrate W by the indexer robot IR.
　制御部１０２は、センターロボットＣＲを制御して、センターロボットＣＲによって基板Ｗを受け渡しする。例えば、センターロボットＣＲは、未処理の基板Ｗを受け取って、複数のチャンバー１１０のうちのいずれかに基板Ｗを搬入する。また、センターロボットＣＲは、処理された基板Ｗをチャンバー１１０から受け取って、基板Ｗを搬出する。 The control unit 102 controls the center robot CR and delivers the substrate W by the center robot CR. For example, the center robot CR receives the unprocessed substrate W and carries the substrate W into one of the plurality of chambers 110. Further, the center robot CR receives the processed substrate W from the chamber 110 and carries out the substrate W.
　制御部１０２は、処理液供給部１３０のバルブ１３２ｂ、１３４ｂ、１３６ｂをそれぞれ別個に制御して、バルブ１３２ｂ、１３４ｂ、１３６ｂの状態を開状態と閉状態とに切り替えることができる。具体的には、制御部１０２は、処理液供給部１３０のバルブ１３２ｂ、１３４ｂ、１３６ｂを制御して、バルブ１３２ｂ、１３４ｂ、１３６ｂを開状態にすることによって、ノズル１３２ｎ、１３４ｎ、１３６ｎに向かって配管１３２ａ、１３４ａ、１３６ａ内を流れる薬液、リンス液および有機溶剤を通過させることができる。また、制御部１０２は、処理液供給部１３０のバルブ１３２ｂ、１３４ｂ、１３６ｂを制御して、バルブ１３２ｂ、１３４ｂ、１３６ｂを閉状態にすることによって、ノズル１３２ｎ、１３４ｎ、１３６ｎに向かって配管１３２ａ、１３４ａ、１３６ａ内を流れる薬液、リンス液および有機溶剤の供給をそれぞれ停止させることができる。 The control unit 102 can control the valves 132b, 134b, 136b of the processing liquid supply unit 130 separately, and can switch the state of the valves 132b, 134b, 136b between the open state and the closed state. Specifically, the control unit 102 controls the valves 132b, 134b, 136b of the processing liquid supply unit 130 to open the valves 132b, 134b, 136b toward the nozzles 132n, 134n, 136n. The chemical solution, rinsing solution and organic solvent flowing in the pipes 132a, 134a and 136a can be passed through. Further, the control unit 102 controls the valves 132b, 134b, 136b of the processing liquid supply unit 130 to close the valves 132b, 134b, 136b, so that the pipes 132a, toward the nozzles 132n, 134n, 136n, The supply of the chemical solution, the rinsing solution and the organic solvent flowing in 134a and 136a can be stopped, respectively.
　制御部１０２は、ガス供給部１４０のバルブ１４０ｂを制御して、バルブ１４０ｂの状態を開状態と閉状態とに切り替えることができる。具体的には、制御部１０２は、ガス供給部１４０のバルブ１４０ｂを制御して、バルブ１４０ｂを開状態にすることによって、ノズル１４０ｎに向かって配管１４０ａ内を流れるガスを通過させることができる。また、制御部１０２は、ガス供給部１４０のバルブ１４０ｂを制御して、バルブ１４０ｂを閉状態にすることによって、ノズル１４０ｎに向かって配管１４０ａ内を流れるガスの供給を停止させることができる。 The control unit 102 can control the valve 140b of the gas supply unit 140 to switch the state of the valve 140b between the open state and the closed state. Specifically, the control unit 102 controls the valve 140b of the gas supply unit 140 to open the valve 140b, so that the gas flowing in the pipe 140a can be passed toward the nozzle 140n. Further, the control unit 102 can stop the supply of gas flowing in the pipe 140a toward the nozzle 140n by controlling the valve 140b of the gas supply unit 140 to close the valve 140b.
　制御部１０２は、通電ユニット１５６を制御して、加熱部材１５０の加熱を制御できる。具体的には、制御部１０２は、通電ユニット１５６を制御して、加熱部材１５０のヒーター１５４に電流を供給することによって、加熱部材１５０の加熱を開始できる。一方、制御部１０２は、通電ユニット１５６を制御して、加熱部材１５０のヒーター１５４に電流の供給を停止することによって、加熱部材１５０の加熱を停止できる。 The control unit 102 can control the energization unit 156 to control the heating of the heating member 150. Specifically, the control unit 102 can start heating the heating member 150 by controlling the energizing unit 156 and supplying an electric current to the heater 154 of the heating member 150. On the other hand, the control unit 102 can stop the heating of the heating member 150 by controlling the energizing unit 156 and stopping the supply of the electric current to the heater 154 of the heating member 150.
　制御部１０２は、昇降ユニット１８２を制御して、カップ１８０を移動できる。具体的には、制御部１０２は、昇降ユニット１８２を制御して、カップ１８０を鉛直方向に上昇させることによって、カップ１８０の位置を基板保持部１２０の側方に移動できる。一方、制御部１０２は、昇降ユニット１８２を制御して、カップ１８０を鉛直方向に下降させることによって、カップ１８０の位置を退避位置に移動することができる。 The control unit 102 can move the cup 180 by controlling the elevating unit 182. Specifically, the control unit 102 can move the position of the cup 180 to the side of the substrate holding unit 120 by controlling the elevating unit 182 and raising the cup 180 in the vertical direction. On the other hand, the control unit 102 can move the position of the cup 180 to the retracted position by controlling the elevating unit 182 and lowering the cup 180 in the vertical direction.
　次に、図１～図４を参照して、本実施形態による加熱部材１５０の清浄処理を説明する。図４（ａ）～図４（ｆ）は、加熱部材１５０の清浄処理を説明するための模式図である。なお、加熱部材１５０の清浄処理は、基板Ｗを処理する前に行われてもよい。あるいは、加熱部材１５０の清浄処理は、基板Ｗを処理した後に行われてもよい。 Next, the cleaning treatment of the heating member 150 according to the present embodiment will be described with reference to FIGS. 1 to 4. 4 (a) to 4 (f) are schematic views for explaining the cleaning process of the heating member 150. The cleaning treatment of the heating member 150 may be performed before processing the substrate W. Alternatively, the cleaning treatment of the heating member 150 may be performed after the substrate W has been treated.
　図４（ａ）に示すように、加熱部材１５０の上方には、基板Ｗは配置されない。加熱部材１５０は、基板Ｗを処理する際に基板Ｗを加熱するために用いられる。このため、加熱部材１５０の上方には、基板Ｗを設置可能であるが、ここでは、基板Ｗは、加熱部材１５０の上方に配置されない。 As shown in FIG. 4A, the substrate W is not arranged above the heating member 150. The heating member 150 is used to heat the substrate W when processing the substrate W. Therefore, the substrate W can be installed above the heating member 150, but here, the substrate W is not arranged above the heating member 150.
　図４（ｂ）に示すように、リンス液供給部１３４は、加熱部材１５０の上面１５０ａにリンス液Ｒを供給する。例えば、リンス液供給部１３４は、加熱部材１５０の上面１５０ａのうちの中心１５０ｄ近傍にリンス液Ｒを供給する。一例では、リンス液供給部１３４のノズル１３４ｎは、リンス液Ｒを吐出しながら、加熱部材１５０に対して、加熱部材１５０の上面１５０ａのうちの中心１５０ｄをまたぐように移動する。あるいは、リンス液供給部１３４は、加熱部材１５０の上面１５０ａの外周部にリンス液Ｒを供給する。なお、リンス液供給部１３４は、基板Ｗの処理に用いるためのものであるが、ここでは、加熱部材１５０を清浄にするために用いられる。 As shown in FIG. 4B, the rinse liquid supply unit 134 supplies the rinse liquid R to the upper surface 150a of the heating member 150. For example, the rinse liquid supply unit 134 supplies the rinse liquid R to the vicinity of the center 150d of the upper surface 150a of the heating member 150. In one example, the nozzle 134n of the rinse liquid supply unit 134 moves with respect to the heating member 150 so as to straddle the center 150d of the upper surface 150a of the heating member 150 while discharging the rinse liquid R. Alternatively, the rinse liquid supply unit 134 supplies the rinse liquid R to the outer peripheral portion of the upper surface 150a of the heating member 150. The rinse liquid supply unit 134 is used for processing the substrate W, but here, it is used for cleaning the heating member 150.
　図４（ｃ）に示すように、薬液供給部１３２は、加熱部材１５０の上面１５０ａの外周部に薬液Ｃｓを選択的に供給する。例えば、薬液供給部１３２は、加熱部材１５０の上面１５０ａのうちの中心１５０ｄと端部との間の中間位置よりも外側の位置に薬液Ｃｓを選択的に供給する。これにより、加熱部材１５０の上面１５０ａにおいて、薬液Ｃｓはリンス液Ｒと混ざりあってリンス液Ｒ内を拡散する。なお、薬液供給部１３２は、基板Ｗの処理に用いるためのものであるが、ここでは、加熱部材１５０を清浄にするために用いられる。なお、薬液Ｃｓは、薬液供給部１３２のノズル１３２ｎから加熱部材１５０の上面１５０ａの中心から離れた位置に向けて吐出される。 As shown in FIG. 4C, the chemical solution supply unit 132 selectively supplies the chemical solution Cs to the outer peripheral portion of the upper surface 150a of the heating member 150. For example, the chemical solution supply unit 132 selectively supplies the chemical solution Cs to a position outside the intermediate position between the center 150d and the end portion of the upper surface 150a of the heating member 150. As a result, on the upper surface 150a of the heating member 150, the chemical solution Cs mixes with the rinsing solution R and diffuses in the rinsing solution R. The chemical solution supply unit 132 is used for processing the substrate W, but here, it is used for cleaning the heating member 150. The chemical solution Cs is discharged from the nozzle 132n of the chemical solution supply unit 132 toward a position away from the center of the upper surface 150a of the heating member 150.
　なお、薬液Ｃｓが供給される前に、リンス液Ｒは、加熱部材１５０の上面１５０ａのうちの中心１５０ｄと端部との間の中間位置よりも外側に位置する。例えば、リンス液Ｒは、加熱部材１５０の上面１５０ａの外周部に位置する。リンス液Ｒは、ガス供給部１４０のガスが供給されることによって加熱部材１５０の上面１５０ａを移動して加熱部材１５０の上面１５０ａの外周部に位置してもよい。あるいは、リンス液供給部１３４のノズル１３４ｎは、加熱部材１５０の上面１５０ａの外周部にリンス液Ｒを吐出するように移動してもよい。 Before the chemical solution Cs is supplied, the rinse solution R is located outside the intermediate position between the center 150d and the end of the upper surface 150a of the heating member 150. For example, the rinse liquid R is located on the outer peripheral portion of the upper surface 150a of the heating member 150. The rinse liquid R may move on the upper surface 150a of the heating member 150 by being supplied with the gas of the gas supply unit 140 and may be located on the outer peripheral portion of the upper surface 150a of the heating member 150. Alternatively, the nozzle 134n of the rinse liquid supply unit 134 may move so as to discharge the rinse liquid R to the outer peripheral portion of the upper surface 150a of the heating member 150.
　加熱部材１５０の上面１５０ａの外周部において、リンス液Ｒは、リング状に形成される。なお、図４（ｃ）では、薬液Ｃｓの供給前に、リンス液Ｒは、加熱部材１５０の上面１５０ａの中心１５０ｄを覆わないが、リンス液Ｒは、加熱部材１５０の上面１５０ａの中心１５０ｄを覆ってもよい。 The rinse liquid R is formed in a ring shape on the outer peripheral portion of the upper surface 150a of the heating member 150. In FIG. 4C, the rinsing liquid R does not cover the center 150d of the upper surface 150a of the heating member 150 before the chemical solution Cs is supplied, but the rinsing liquid R covers the center 150d of the upper surface 150a of the heating member 150. You may cover it.
　図４（ｄ）に示すように、加熱部材１５０の上面１５０ａの外周部において、薬液Ｃｓは、リング状に形成される。薬液Ｃｓは、加熱部材１５０の上面１５０ａの中心１５０ｄを覆うことなく、加熱部材１５０の中心１５０ｄと上面１５０ａの端部との間の領域においてリング状に配置される。 As shown in FIG. 4D, the chemical solution Cs is formed in a ring shape on the outer peripheral portion of the upper surface 150a of the heating member 150. The chemical solution Cs is arranged in a ring shape in the region between the center 150d of the heating member 150 and the end portion of the upper surface 150a without covering the center 150d of the upper surface 150a of the heating member 150.
　図４（ｅ）に示すように、加熱部材１５０の上面１５０ａにおいて、薬液Ｃｓを、上面１５０ａの端部に向かって移動させる。この場合、薬液Ｃｓは、加熱部材１５０の上面１５０ａにおいて、薬液Ｃｓのリングが広がるように移動する。薬液Ｃｓの移動に伴い、加熱部材１５０の上面１５０ａは清浄にされる。例えば、薬液Ｃｓは、ガスによって移動してもよい。あるいは、薬液Ｃｓは、加熱部材１５０の回転による遠心力に伴って移動してもよい。 As shown in FIG. 4 (e), the chemical solution Cs is moved toward the end of the upper surface 150a on the upper surface 150a of the heating member 150. In this case, the chemical solution Cs moves on the upper surface 150a of the heating member 150 so that the ring of the chemical solution Cs spreads. As the chemical solution Cs moves, the upper surface 150a of the heating member 150 is cleaned. For example, the chemical solution Cs may be moved by gas. Alternatively, the chemical solution Cs may move with the centrifugal force due to the rotation of the heating member 150.
　その後、図４（ｆ）に示すように、薬液Ｃｓは、加熱部材１５０の上面１５０ａから外部に排出される。以上のようにして、薬液Ｃｓにより、加熱部材１５０の上面１５０ａを清浄にできる。 After that, as shown in FIG. 4 (f), the chemical solution Cs is discharged to the outside from the upper surface 150a of the heating member 150. As described above, the upper surface 150a of the heating member 150 can be cleaned by the chemical solution Cs.
　例えば、基板Ｗを処理する際に、基板Ｗの処理に用いた薬液、リンス液および有機溶剤のいずれかが基板Ｗから垂れて加熱部材に付着することがある。これらの処理液が加熱部材に付着すると、加熱部材の上面の外周部に不純物が付着する。特に、薬液として基板Ｗをエッチングするエッチング液を用いる場合、エッチング処理によって基板Ｗから除去された成分が加熱部材の上面の外周部に付着して、加熱部材の上面の外周部に付着物が形成されやすい。さらに、加熱部材は、温度変化を伴うため、付着物が固化することもある。その後、基板Ｗの処理中に、加熱部材の付着物の成分が加熱部材から基板Ｗに付着すると、基板Ｗの特性が変化してしまう。例えば、付着物は、金属を含むことがある。一例として、金属は、チタン（Ｔｉ）、コバルト（Ｃｏ）、タングステン（Ｗ）およびガリウム（Ｇａ）のいずれかを含む。 For example, when processing the substrate W, any of the chemical solution, the rinsing solution, and the organic solvent used for processing the substrate W may drip from the substrate W and adhere to the heating member. When these treatment liquids adhere to the heating member, impurities adhere to the outer peripheral portion of the upper surface of the heating member. In particular, when an etching solution for etching the substrate W is used as the chemical solution, the components removed from the substrate W by the etching process adhere to the outer peripheral portion of the upper surface of the heating member, and deposits are formed on the outer peripheral portion of the upper surface of the heating member. Easy to be done. Further, since the heating member is accompanied by a temperature change, the deposits may solidify. After that, if the components of the deposits of the heating member adhere to the substrate W from the heating member during the processing of the substrate W, the characteristics of the substrate W change. For example, deposits may contain metals. As an example, the metal comprises any of titanium (Ti), cobalt (Co), tungsten (W) and gallium (Ga).
　本実施形態の基板処理装置１００によれば、加熱部材１５０の上面１５０ａの外周部に選択的に供給された薬液により、加熱部材１５０の上面１５０ａの外周部を効率的に清浄にできる。このため、加熱部材１５０の付着物の成分が基板Ｗに付着して基板Ｗの特性が低下することを抑制できる。 According to the substrate processing apparatus 100 of the present embodiment, the outer peripheral portion of the upper surface 150a of the heating member 150 can be efficiently cleaned by the chemical solution selectively supplied to the outer peripheral portion of the upper surface 150a of the heating member 150. Therefore, it is possible to prevent the components of the deposits of the heating member 150 from adhering to the substrate W and deteriorating the characteristics of the substrate W.
　なお、付着物に含有される金属の種類に応じて、異なる薬液を用いることが好ましい。付着物がチタン（Ｔｉ）を含む場合、典型的には、付着物は、酸化チタンおよび／または窒化チタンを含む。この場合、薬液としてフッ酸を用いることが好ましい。あるいは、薬液として、フッ酸および過酸化水素水を用いることが好ましい。特に、薬液として、フッ酸および過酸化水素水を交互に用いることが好ましい。過酸化水素水により、付着物の金属を酸化させることができる。また、フッ酸により、酸化物を除去できる。 It is preferable to use different chemical solutions depending on the type of metal contained in the deposit. If the deposits contain titanium (Ti), the deposits typically include titanium oxide and / or titanium nitride. In this case, it is preferable to use hydrofluoric acid as the chemical solution. Alternatively, it is preferable to use hydrofluoric acid and hydrogen peroxide solution as the chemical solution. In particular, it is preferable to alternately use hydrofluoric acid and hydrogen peroxide solution as the chemical solution. The metal of the deposit can be oxidized by the hydrogen peroxide solution. In addition, oxides can be removed by hydrofluoric acid.
　付着物がコバルト（Ｃｏ）を含む場合、薬液としてＳＣ２（塩酸過酸化水素水混合液）を用いることが好ましい。また、付着物がタングステン（Ｗ）を含む場合、薬液としてＳＣ１（アンモニア過酸化水素水混合液）を用いることが好ましい。あるいは、付着物がタングステン（Ｗ）を含む場合でも、薬液としてＳＣ２を用いてもよい。また、付着物がガリウム（Ｇａ）を含む場合、薬液として王水（濃塩酸と濃硝酸との混合物）を用いてもよい。 When the deposit contains cobalt (Co), it is preferable to use SC2 (hydrochloric acid hydrogen peroxide solution) as the chemical solution. When the deposit contains tungsten (W), it is preferable to use SC1 (ammonia-hydrogen peroxide solution) as the chemical solution. Alternatively, SC2 may be used as the chemical solution even when the deposit contains tungsten (W). When the deposit contains gallium (Ga), aqua regia (a mixture of concentrated hydrochloric acid and concentrated nitric acid) may be used as the chemical solution.
　なお、付着物は、金属を含有しなくてもよい。例えば、付着物は、エッチングの残渣であってもよい。または、付着物は、シリコンの残渣であってもよい。あるいは、付着物は、ドライエッチング後のポリマーの残渣であってもよい。 The deposit does not have to contain metal. For example, the deposit may be an etching residue. Alternatively, the deposit may be a residue of silicon. Alternatively, the deposit may be a residue of the polymer after dry etching.
　薬液供給部１３２は、一方向にのみ移動可能であってもよい。例えば、薬液供給部１３２のノズル１３２ｎは、Ｘ方向に沿って移動可能であり、薬液供給部１３２は、基板Ｗの中心１５０ｄを通る直線上に移動可能であってもよい。また、薬液は、リンス液およびガスによって、加熱部材１５０の上面１５０ａにおいてリング状に形成されてもよい。 The chemical supply unit 132 may be movable in only one direction. For example, the nozzle 132n of the chemical solution supply unit 132 may be movable along the X direction, and the chemical solution supply unit 132 may be movable on a straight line passing through the center 150d of the substrate W. Further, the chemical solution may be formed in a ring shape on the upper surface 150a of the heating member 150 by the rinsing solution and the gas.
　次に、図１～図５を参照して、本実施形態による加熱部材１５０の清浄処理を説明する。図５（ａ）～図５（ｅ）は、加熱部材１５０の清浄処理を説明するための模式図である。 Next, the cleaning treatment of the heating member 150 according to the present embodiment will be described with reference to FIGS. 1 to 5. 5 (a) to 5 (e) are schematic views for explaining the cleaning process of the heating member 150.
　図５（ａ）に示すように、加熱部材１５０にリンス液Ｒを供給する。詳細には、リンス液供給部１３４は、加熱部材１５０の上面１５０ａの中央にリンス液Ｒを供給する。リンス液Ｒは、加熱部材１５０の上面１５０ａの中心１５０ｄを覆う。なお、リンス液供給部１３４は、基板Ｗの処理に用いるためのものであるが、ここでは、加熱部材１５０を清浄にするために用いられる。 As shown in FIG. 5A, the rinse liquid R is supplied to the heating member 150. Specifically, the rinse liquid supply unit 134 supplies the rinse liquid R to the center of the upper surface 150a of the heating member 150. The rinse liquid R covers the center 150d of the upper surface 150a of the heating member 150. The rinse liquid supply unit 134 is used for processing the substrate W, but here, it is used for cleaning the heating member 150.
　図５（ｂ）に示すように、ガス供給部１４０は、加熱部材１５０の上面１５０ａの中央付近にガスＧを供給する。ガス供給部１４０からのガスＧにより、リンス液Ｒは、加熱部材１５０の上面１５０ａの中央から周囲に広がる。ここでは、リンス液Ｒは、加熱部材１５０の上面１５０ａの中心１５０ｄを覆うことなく、リング状に形成される。 As shown in FIG. 5B, the gas supply unit 140 supplies the gas G near the center of the upper surface 150a of the heating member 150. Due to the gas G from the gas supply unit 140, the rinse liquid R spreads from the center of the upper surface 150a of the heating member 150 to the periphery. Here, the rinse liquid R is formed in a ring shape without covering the center 150d of the upper surface 150a of the heating member 150.
　図５（ｃ）に示すように、薬液Ｃｓが、加熱部材１５０の上面１５０ａの外周部に選択的に供給される。詳細には、薬液供給部１３２は、加熱部材１５０の上面１５０ａのうちのリンス液Ｒに向けて薬液Ｃｓを供給する。ここでは、薬液供給部１３２は、加熱部材１５０の上面１５０ａの第１位置に薬液Ｃｓを吐出する。薬液Ｃｓは、リンス液Ｒと混ざりあってリンス液Ｒとともにリング状に沿って広がるように移動する。なお、加熱部材１５０の上面１５０ａには先にリンス液Ｒが吐出されているため、薬液Ｃｓは、加熱部材１５０の上面１５０ａにおいてリンス液Ｒに拡散して混合液となる一方で、薬液Ｃｓは、加熱部材１５０の上面１５０ａのうちのリンス液Ｒのない領域にはほとんど拡散しない。 As shown in FIG. 5C, the chemical solution Cs is selectively supplied to the outer peripheral portion of the upper surface 150a of the heating member 150. Specifically, the chemical solution supply unit 132 supplies the chemical solution Cs toward the rinse solution R on the upper surface 150a of the heating member 150. Here, the chemical solution supply unit 132 discharges the chemical solution Cs to the first position on the upper surface 150a of the heating member 150. The chemical solution Cs mixes with the rinse solution R and moves together with the rinse solution R so as to spread along a ring shape. Since the rinse solution R is first discharged to the upper surface 150a of the heating member 150, the chemical solution Cs diffuses into the rinse solution R on the upper surface 150a of the heating member 150 to become a mixed solution, while the chemical solution Cs is , It hardly diffuses in the region of the upper surface 150a of the heating member 150 where there is no rinse solution R.
　図５（ｄ）に示すように、薬液Ｃｓは、加熱部材１５０の上面１５０ａの外周部に選択的に供給される。詳細には、薬液供給部１３２は、加熱部材１５０の上面１５０ａのリンス液Ｒのある位置に向けて薬液Ｃｓを供給する。ここでは、薬液供給部１３２のノズル１３２ｎは、Ｘ方向に沿って、第１位置から第２位置に移動した後で、薬液Ｃｓを吐出する。薬液Ｃｓは、リング状のリンス液Ｒと薬液Ｃｓとの混合液に沿って広がるように移動する。 As shown in FIG. 5D, the chemical solution Cs is selectively supplied to the outer peripheral portion of the upper surface 150a of the heating member 150. Specifically, the chemical solution supply unit 132 supplies the chemical solution Cs toward the position of the rinse solution R on the upper surface 150a of the heating member 150. Here, the nozzle 132n of the chemical solution supply unit 132 discharges the chemical solution Cs after moving from the first position to the second position along the X direction. The chemical solution Cs moves so as to spread along the mixed solution of the ring-shaped rinse solution R and the chemical solution Cs.
　図５（ｅ）に示すように、ガス供給部１４０は、加熱部材１５０の上面１５０ａにガスＧを供給する。ガス供給部１４０は、加熱部材１５０の上面１５０ａの中央付近にガスＧを供給する。ガス供給部１４０から供給されたガスＧにより、リンス液Ｒおよび薬液Ｃｓの混合液は、加熱部材１５０の上面１５０ａの端部に移動して加熱部材１５０の上面１５０ａの端部から外部に排出される。以上のようにして、薬液Ｃｓにより、加熱部材１５０の上面１５０ａを清浄できる。 As shown in FIG. 5 (e), the gas supply unit 140 supplies the gas G to the upper surface 150a of the heating member 150. The gas supply unit 140 supplies the gas G near the center of the upper surface 150a of the heating member 150. Due to the gas G supplied from the gas supply unit 140, the mixed solution of the rinse liquid R and the chemical liquid Cs moves to the end of the upper surface 150a of the heating member 150 and is discharged to the outside from the end of the upper surface 150a of the heating member 150. To. As described above, the upper surface 150a of the heating member 150 can be cleaned by the chemical solution Cs.
　なお、上述した説明では、図５（ｂ）において、ガスＧを供給して、リンス液Ｒをリング状に形成したが、本実施形態はこれに限定されない。図５（ｂ）では、リンス液Ｒは、リング状に形成されなくてもよい。また、上述した説明では、図５（ｃ）において、薬液Ｃｓを吐出することにより、リンス液Ｒおよび薬液Ｃｓの混合液は、リング状に形成されたが、本実施形態はこれに限定されない。図５（ｃ）では、リンス液Ｒおよび薬液Ｃｓの混合液は、リング状に形成されなくてもよい。ただし、図５（ｄ）に示すように、排出のためのガスＧを供給する前には、リンス液Ｒと薬液Ｃｓとの混合液は、リング状に形成されることが好ましい。これにより、薬液Ｃｓが加熱部材１５０の上面１５０ａの外周部を効率的に清浄にできる。 In the above description, in FIG. 5B, the gas G is supplied to form the rinse liquid R in a ring shape, but the present embodiment is not limited to this. In FIG. 5B, the rinse liquid R does not have to be formed in a ring shape. Further, in the above description, in FIG. 5C, the mixed solution of the rinse solution R and the chemical solution Cs is formed in a ring shape by discharging the chemical solution Cs, but the present embodiment is not limited to this. In FIG. 5C, the mixed solution of the rinse solution R and the chemical solution Cs does not have to be formed in a ring shape. However, as shown in FIG. 5D, it is preferable that the mixed solution of the rinse solution R and the chemical solution Cs is formed in a ring shape before the gas G for discharge is supplied. As a result, the chemical solution Cs can efficiently clean the outer peripheral portion of the upper surface 150a of the heating member 150.
　なお、図５を参照した上述の説明では、薬液供給部１３２は、Ｘ方向に沿って基板Ｗに対して移動したが、薬液供給部１３２は、Ｘ方向およびＹ方向に沿って基板Ｗに対して移動可能であってもよい。この場合、薬液供給部１３２は、リング状のリンス液Ｒに沿うように薬液を供給してもよい。 In the above description with reference to FIG. 5, the chemical solution supply unit 132 moves with respect to the substrate W along the X direction, but the chemical solution supply unit 132 moves with respect to the substrate W along the X direction and the Y direction. It may be movable. In this case, the chemical solution supply unit 132 may supply the chemical solution along the ring-shaped rinse solution R.
　また、図５を参照した上述の説明では、薬液供給部１３２は、加熱部材１５０の上面１５０ａの２つの位置に薬液Ｃｓを供給したが、本実施形態はこれに限定されない。薬液供給部１３２は、加熱部材１５０の上面１５０ａに対して１つの位置に薬液Ｃｓを供給してもよい。あるいは、薬液供給部１３２は、リンス液Ｒに対して３つ以上の位置に薬液Ｃｓを供給してもよい。 Further, in the above description with reference to FIG. 5, the chemical solution supply unit 132 supplies the chemical solution Cs to two positions on the upper surface 150a of the heating member 150, but the present embodiment is not limited to this. The chemical solution supply unit 132 may supply the chemical solution Cs to one position with respect to the upper surface 150a of the heating member 150. Alternatively, the chemical solution supply unit 132 may supply the chemical solution Cs to three or more positions with respect to the rinse solution R.
　上述したように、基板Ｗを処理する際に、加熱部材１５０に付着物が付着することがある。このため、加熱部材１５０は、基板Ｗの処理後に清浄にしてもよい。 As described above, when the substrate W is processed, deposits may adhere to the heating member 150. Therefore, the heating member 150 may be cleaned after the treatment of the substrate W.
　次に、図１～図６を参照して本実施形態の基板処理装置による基板処理方法を説明する。図６は、本実施形態の基板処理装置による基板処理方法を説明するためのフロー図である。 Next, a substrate processing method using the substrate processing apparatus of the present embodiment will be described with reference to FIGS. 1 to 6. FIG. 6 is a flow chart for explaining a substrate processing method by the substrate processing apparatus of the present embodiment.
　ステップＳａ１に示すように、チャンバー１１０に基板Ｗを搬入する。例えば、センターロボットＣＲがチャンバー１１０内に未処理の基板Ｗを搬入する。基板保持部１２０は、搬入された基板Ｗを保持する。典型的には、基板Ｗには、シリコンウエハの表面に微細パターンが形成されている。次に、処理は、ステップＳａ２に進む。 As shown in step Sa1, the substrate W is carried into the chamber 110. For example, the center robot CR carries the unprocessed substrate W into the chamber 110. The board holding unit 120 holds the carried-in board W. Typically, the substrate W has a fine pattern formed on the surface of the silicon wafer. Next, the process proceeds to step Sa2.
　ステップＳａ２に示すように、基板Ｗを薬液で処理する。薬液供給部１３２は、基板Ｗに薬液を供給する。薬液供給部１３２は、バルブ１３２ｂを開いて、ノズル１３２ｎから薬液を吐出する。このとき、基板保持部１２０は、基板Ｗを回転する。基板Ｗの上面Ｗａの中心部付近に供給された薬液は、基板Ｗの回転による遠心力を受けて、基板Ｗの上面Ｗａ上を基板Ｗの周縁部に向けて流れる。これにより、基板Ｗの上面Ｗａの全域に薬液が行きわたり、基板Ｗの上面Ｗａが薬液で処理される。 As shown in step Sa2, the substrate W is treated with a chemical solution. The chemical solution supply unit 132 supplies the chemical solution to the substrate W. The chemical solution supply unit 132 opens the valve 132b and discharges the chemical solution from the nozzle 132n. At this time, the substrate holding portion 120 rotates the substrate W. The chemical solution supplied near the center of the upper surface Wa of the substrate W receives centrifugal force due to the rotation of the substrate W and flows on the upper surface Wa of the substrate W toward the peripheral edge of the substrate W. As a result, the chemical solution spreads over the entire upper surface Wa of the substrate W, and the upper surface Wa of the substrate W is treated with the chemical solution.
　この場合、カップ１８０は、基板Ｗの側方に位置するまで上昇しており、基板Ｗから飛び散る薬液を回収する。その後、薬液供給部１３２は、薬液の供給を停止する。次に、処理は、ステップＳａ３に進む。 In this case, the cup 180 is raised until it is located on the side of the substrate W, and collects the chemical solution scattered from the substrate W. After that, the chemical solution supply unit 132 stops the supply of the chemical solution. Next, the process proceeds to step Sa3.
　ステップＳａ３に示すように、基板Ｗをリンス液でリンスする。リンス液供給部１３４は、基板Ｗにリンス液を供給する。リンス液供給部１３４は、バルブ１３４ｂを開いて、ノズル１３４ｎからリンス液を吐出する。このとき、基板保持部１２０は、基板Ｗを保持して回転する。基板Ｗの上面Ｗａの中心部付近に供給されたリンス液は、基板Ｗの回転による遠心力を受けて、基板Ｗの上面Ｗａ上を基板Ｗの周縁部に向けて流れる。これにより、基板Ｗの上面Ｗａの全域にリンス液が行きわたり、基板Ｗの上面Ｗａがリンス液でリンスされる。その後、リンス液供給部１３４は、リンス液の供給を停止する。次に、処理は、ステップＳａ４に進む。 As shown in step Sa3, the substrate W is rinsed with a rinse solution. The rinse liquid supply unit 134 supplies the rinse liquid to the substrate W. The rinse liquid supply unit 134 opens the valve 134b and discharges the rinse liquid from the nozzle 134n. At this time, the substrate holding portion 120 holds the substrate W and rotates. The rinse liquid supplied near the center of the upper surface Wa of the substrate W receives centrifugal force due to the rotation of the substrate W and flows on the upper surface Wa of the substrate W toward the peripheral edge of the substrate W. As a result, the rinse liquid spreads over the entire upper surface Wa of the substrate W, and the upper surface Wa of the substrate W is rinsed with the rinse liquid. After that, the rinse liquid supply unit 134 stops the supply of the rinse liquid. Next, the process proceeds to step Sa4.
　ステップＳａ４に示すように、基板Ｗを有機溶剤で処理する。有機溶剤供給部１３６は、基板Ｗに有機溶剤を供給する。有機溶剤供給部１３６は、バルブ１３６ｂを開いて、ノズル１３６ｎから有機溶剤を吐出する。このとき、基板保持部１２０は、基板Ｗを保持して回転する。基板Ｗの上面Ｗａの中心部付近に供給された有機溶剤は、基板Ｗの回転による遠心力を受けて、基板Ｗの上面Ｗａ上を基板Ｗの周縁部に向けて流れる。これにより、基板Ｗの上面Ｗａの全域に有機溶剤が行きわたり、基板Ｗの上面Ｗａのリンス液が有機溶剤に置換される。その後、有機溶剤供給部１３６は、有機溶剤の供給を停止する。次に、処理は、ステップＳａ５に進む。 As shown in step Sa4, the substrate W is treated with an organic solvent. The organic solvent supply unit 136 supplies the organic solvent to the substrate W. The organic solvent supply unit 136 opens the valve 136b and discharges the organic solvent from the nozzle 136n. At this time, the substrate holding portion 120 holds the substrate W and rotates. The organic solvent supplied near the center of the upper surface Wa of the substrate W receives centrifugal force due to the rotation of the substrate W and flows on the upper surface Wa of the substrate W toward the peripheral edge of the substrate W. As a result, the organic solvent spreads over the entire upper surface Wa of the substrate W, and the rinsing liquid on the upper surface Wa of the substrate W is replaced with the organic solvent. After that, the organic solvent supply unit 136 stops the supply of the organic solvent. Next, the process proceeds to step Sa5.
　ステップＳａ５に示すように、加熱部材１５０は、基板Ｗを加熱する。基板Ｗの裏面Ｗｂは、加熱部材１５０からの熱輻射または基板Ｗの裏面Ｗｂと加熱部材１５０の上面１５０ａとの間の空間内流体熱伝導により加熱される。加熱部材１５０は、加熱部材１５０の上面１５０ａと基板Ｗの裏面Ｗｂとが平行になるように配置される。このため、加熱部材１５０から基板Ｗに与えられる単位面積当たりの熱量は、基板Ｗの全域においてほぼ均一となる。このとき、基板Ｗの回転を停止するか、基板Ｗは低速で回転する。 As shown in step Sa5, the heating member 150 heats the substrate W. The back surface Wb of the substrate W is heated by heat radiation from the heating member 150 or fluid heat conduction in space between the back surface Wb of the substrate W and the upper surface 150a of the heating member 150. The heating member 150 is arranged so that the upper surface 150a of the heating member 150 and the back surface Wb of the substrate W are parallel to each other. Therefore, the amount of heat per unit area given to the substrate W by the heating member 150 becomes substantially uniform over the entire area of the substrate W. At this time, the rotation of the substrate W is stopped, or the substrate W rotates at a low speed.
　加熱部材１５０が基板Ｗの裏面Ｗｂを加熱することにより、基板Ｗの上面Ｗａの全面の温度が、予め定める加熱時上面温度まで上昇する。加熱時の上面温度は、有機溶剤の沸点よりも１０～５０℃高い範囲の所定の温度である。基板Ｗの上面Ｗａの全面がこの加熱時上面温度まで上昇するように、加熱部材１５０の単位面積当たりの熱量および、基板Ｗの裏面Ｗｂと加熱部材１５０の上面１５０ａとの間隔が所定の大きさに設定されている。 When the heating member 150 heats the back surface Wb of the substrate W, the temperature of the entire surface of the upper surface Wa of the substrate W rises to a predetermined upper surface temperature during heating. The top surface temperature during heating is a predetermined temperature in the range of 10 to 50 ° C. higher than the boiling point of the organic solvent. The amount of heat per unit area of the heating member 150 and the distance between the back surface Wb of the substrate W and the upper surface 150a of the heating member 150 are predetermined so that the entire surface of the upper surface Wa of the substrate W rises to the upper surface temperature during heating. Is set to.
　ステップＳａ６に示すように、有機溶剤を除去する。まず、基板Ｗの上面Ｗａの温度が加熱時上面温度に到達して所定時間が経過すると、基板Ｗの上面Ｗａの有機溶剤の一部が蒸発して気化し、基板Ｗの上面Ｗａの上方空間に蒸気膜が形成される。これにより、基板Ｗの上面Ｗａから有機溶剤が浮上する。 As shown in step Sa6, the organic solvent is removed. First, when the temperature of the upper surface Wa of the substrate W reaches the upper surface temperature during heating and a predetermined time elapses, a part of the organic solvent on the upper surface Wa of the substrate W evaporates and vaporizes, and the space above the upper surface Wa of the substrate W. A vapor film is formed on the surface. As a result, the organic solvent floats from the upper surface Wa of the substrate W.
　その後、基板Ｗを低速で回転するとともに、基板Ｗの上面Ｗａにガスを供給する。例えば、基板保持部１２０は、基板Ｗを回転速度１０ｒｐｍ～５００ｒｐｍで回転するともにガス供給部１４０のバルブ１４０ｂが開く。これにより、基板Ｗの上面Ｗａの中心の有機溶剤が外側に押し出されて部分的に除去されて小径円形状の乾燥領域が形成される。 After that, the substrate W is rotated at a low speed, and gas is supplied to the upper surface Wa of the substrate W. For example, the substrate holding unit 120 rotates the substrate W at a rotation speed of 10 rpm to 500 rpm, and the valve 140b of the gas supply unit 140 opens. As a result, the organic solvent at the center of the upper surface Wa of the substrate W is extruded outward and partially removed to form a small-diameter circular dry region.
　有機溶剤は、蒸気膜を介して、基板Ｗの上面Ｗａから分離されており、基板Ｗの上面Ｗａに沿って移動し易い状態にある。このため、基板Ｗの回転およびガスの供給に伴って乾燥領域は基板Ｗの上面Ｗａの中心から外側に向かって拡大する。乾燥領域が基板Ｗの上面Ｗａの全域に広がることにより、基板Ｗの上面Ｗａから有機溶剤をその液塊状態を維持したままで除去できる。次に、処理は、ステップＳａ７に進む。 The organic solvent is separated from the upper surface Wa of the substrate W via the vapor film, and is in a state of being easily moved along the upper surface Wa of the substrate W. Therefore, as the substrate W rotates and the gas is supplied, the dry region expands outward from the center of the upper surface Wa of the substrate W. Since the dry region extends over the entire upper surface Wa of the substrate W, the organic solvent can be removed from the upper surface Wa of the substrate W while maintaining the liquid mass state. Next, the process proceeds to step Sa7.
　ステップＳａ７に示すように、基板Ｗを乾燥する。例えば、基板保持部１２０は、基板Ｗを高速に回転する。例えば、基板Ｗの回転速度は、２５００ｒｐｍまで増加する。これにより、基板Ｗの上面Ｗａから有機溶剤が振り切られて基板Ｗを乾燥できる。次に、処理は、ステップＳａ８に進む。 As shown in step Sa7, the substrate W is dried. For example, the substrate holding unit 120 rotates the substrate W at high speed. For example, the rotation speed of the substrate W increases up to 2500 rpm. As a result, the organic solvent is shaken off from the upper surface Wa of the substrate W, and the substrate W can be dried. Next, the process proceeds to step Sa8.
　ステップＳａ８に示すように、チャンバー１１０から基板Ｗを搬出する。例えば、センターロボットＣＲがチャンバー１１０内の処理された基板Ｗを搬出する。以上のように、ステップＳａ１～Ｓａ８によって基板Ｗを処理できる。図６において、基板処理工程Ｓａは、ステップＳａ１～Ｓａ８を含む。ここでは、基板処理工程Ｓａの後に、処理は、ステップＳ１２に進む。 As shown in step Sa8, the substrate W is carried out from the chamber 110. For example, the center robot CR carries out the processed substrate W in the chamber 110. As described above, the substrate W can be processed by steps Sa1 to Sa8. In FIG. 6, the substrate processing step Sa includes steps Sa1 to Sa8. Here, after the substrate processing step Sa, the processing proceeds to step S12.
　ステップＳ１２に示すように、加熱部材１５０にリンス液を供給する。例えば、リンス液供給部１３４は、加熱部材１５０の上面１５０ａにリンス液を供給する。典型的には、リンス液供給部１３４は、加熱部材１５０の上面１５０ａの中央にリンス液を供給する。次に、処理は、ステップＳ１４に進む。 As shown in step S12, the rinse liquid is supplied to the heating member 150. For example, the rinse liquid supply unit 134 supplies the rinse liquid to the upper surface 150a of the heating member 150. Typically, the rinse liquid supply unit 134 supplies the rinse liquid to the center of the upper surface 150a of the heating member 150. Next, the process proceeds to step S14.
　ステップＳ１４に示すように、ガス供給部１４０は、加熱部材１５０にガスを供給する。例えば、ガス供給部１４０は、加熱部材１５０の上面１５０ａの中央にガスを供給する。ガスは、例えば不活性ガスである。一例では、ガスは、窒素ガスを含む。ガスの供給により、リンス液は、加熱部材１５０の上面１５０ａにおいてリング状に広がる。このとき、カップ１８０は、加熱部材１５０の側方を覆う位置に配置されていることが好ましい。次に、処理は、ステップＳ１６に進む。 As shown in step S14, the gas supply unit 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. The gas is, for example, an inert gas. In one example, the gas comprises nitrogen gas. Due to the supply of gas, the rinse liquid spreads in a ring shape on the upper surface 150a of the heating member 150. At this time, the cup 180 is preferably arranged at a position that covers the side of the heating member 150. Next, the process proceeds to step S16.
　ステップＳ１６に示すように、加熱部材１５０に薬液を供給する。例えば、薬液供給部１３２は、加熱部材１５０の上面１５０ａのリンス液に向けて薬液を供給する。これにより、薬液は、加熱部材１５０の上面１５０ａのリンス液と混合して、リング状のリンス液内を拡散する。次に、処理は、ステップＳ１８に進む。 As shown in step S16, the chemical solution is supplied to the heating member 150. For example, the chemical solution supply unit 132 supplies the chemical solution toward the rinse solution on the upper surface 150a of the heating member 150. As a result, the chemical solution is mixed with the rinsing solution on the upper surface 150a of the heating member 150 and diffused in the ring-shaped rinsing solution. Next, the process proceeds to step S18.
　ステップＳ１８に示すように、ガス供給部１４０は、加熱部材１５０にガスを供給する。例えば、ガス供給部１４０は、加熱部材１５０の上面１５０ａの中央にガスを供給する。これにより、加熱部材１５０の上面１５０ａのリンス液および薬液は排出される。カップ１８０は、加熱部材１５０の側方を覆う位置に配置されていることが好ましい。 As shown in step S18, the gas supply unit 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. As a result, the rinsing solution and the chemical solution on the upper surface 150a of the heating member 150 are discharged. The cup 180 is preferably arranged at a position that covers the side of the heating member 150.
　ステップＳ１２～Ｓ１８によって加熱部材１５０を清浄処理する。図６において、清浄工程Ｓｐは、ステップＳ１２～ステップＳ１８を含む。以上により、基板Ｗを処理するとともに加熱部材１５０を清浄にできる。本実施形態によれば、基板処理工程Ｓａにおいて加熱部材１５０に付着物が付着しても、清浄工程Ｓｐにおいて加熱部材１５０を速やかに清浄にできる。 The heating member 150 is cleaned by steps S12 to S18. In FIG. 6, the cleaning step Sp includes steps S12 to S18. As described above, the substrate W can be processed and the heating member 150 can be cleaned. According to the present embodiment, even if deposits adhere to the heating member 150 in the substrate processing step Sa, the heating member 150 can be quickly cleaned in the cleaning step Sp.
　なお、図６を参照した上述の説明では、１枚の基板Ｗを処理した後で、加熱部材１５０の上面１５０ａの清浄処理を行ったが、本実施形態はこれに限定されない。所定枚数の基板Ｗの処理が完了した後に、加熱部材１５０の清浄処理を行ってもよい。例えば、加熱部材１５０の清浄処理は、基板Ｗが１０枚処理された毎に行われてもよい。あるいは、加熱部材１５０の清浄処理は、基板Ｗの処理を開始してから所定時間経過後に処理した基板Ｗを排出した後、行われてもよい。例えば、基板Ｗの処理を開始してから５時間経過後に処理した基板Ｗを排出した後、加熱部材１５０の清浄処理を開始してもよい。 In the above description with reference to FIG. 6, after processing one substrate W, the upper surface 150a of the heating member 150 is cleaned, but the present embodiment is not limited to this. After the processing of the predetermined number of substrates W is completed, the heating member 150 may be cleaned. For example, the cleaning treatment of the heating member 150 may be performed every time 10 substrates W are processed. Alternatively, the cleaning treatment of the heating member 150 may be performed after the treated substrate W is discharged after a lapse of a predetermined time from the start of the treatment of the substrate W. For example, the cleaning treatment of the heating member 150 may be started after the treated substrate W is discharged 5 hours after the treatment of the substrate W is started.
　あるいは、基板処理装置１００の駆動を停止した停止期間が所定時間経過した場合、次に、基板処理装置１００の駆動を開始する際に、加熱部材１５０の清浄処理を行ってもよい。あるいは、基板処理装置１００の駆動を停止する直前に、基板Ｗを搬出した後に加熱部材１５０の清浄処理を行ってもよい。 Alternatively, when the stop period in which the drive of the substrate processing device 100 is stopped has elapsed for a predetermined time, the heating member 150 may be cleaned next time when the drive of the substrate processing device 100 is started. Alternatively, immediately before stopping the driving of the substrate processing apparatus 100, the heating member 150 may be cleaned after the substrate W is carried out.
　なお、図６を参照した上述の説明では、加熱部材１５０は、基板Ｗを処理した後に加熱部材１５０の清浄処理を行ったが、本実施形態はこれに限定されない。加熱部材１５０は、基板Ｗを処理する前に清浄処理されてもよい。特に、基板処理装置１００が所定期間駆動しなかった場合、加熱部材１５０は、基板Ｗを処理する前に清浄処理されることが好ましい。 In the above description with reference to FIG. 6, the heating member 150 is subjected to a cleaning treatment of the heating member 150 after the substrate W is treated, but the present embodiment is not limited to this. The heating member 150 may be cleaned before processing the substrate W. In particular, when the substrate processing apparatus 100 is not driven for a predetermined period of time, it is preferable that the heating member 150 is cleaned before processing the substrate W.
　また、図１～図６を参照した上述の説明では、ノズル１３２ｎ、１３４ｎ、１３６ｎおよび１４０ｎはそれぞれ別個に設けられたが、本実施形態はこれに限定されない。ノズル１３２ｎ、１３４ｎ、１３６ｎおよび１４０ｎの少なくとも一部は、一体化されてもよい。また、図１～図６を参照した上述の説明では、基板Ｗの上面Ｗａにのみ液体およびガスが供給されたが、本実施形態はこれに限定されない。基板Ｗの裏面Ｗｂに、液体およびガスの少なくとも一方が供給されてもよい。 Further, in the above description with reference to FIGS. 1 to 6, the nozzles 132n, 134n, 136n and 140n are provided separately, but the present embodiment is not limited to this. At least a part of the nozzles 132n, 134n, 136n and 140n may be integrated. Further, in the above description with reference to FIGS. 1 to 6, the liquid and the gas are supplied only to the upper surface Wa of the substrate W, but the present embodiment is not limited to this. At least one of a liquid and a gas may be supplied to the back surface Wb of the substrate W.
　次に、図７を参照して、本実施形態の基板処理装置１００を説明する。図７は、本実施形態の基板処理装置１００の模式図である。図７に示した基板処理装置１００は、ノズル１３２ｎおよびノズル１３４ｎが一体に移動可能である点、ノズル１３６ｎおよびノズル１４０ｎが一体化されている点、加熱部材１５０が基板Ｗに対して昇降可能である点、および、基板Ｗの裏面Ｗｂにガスが供給される点を除いて、図１、２を参照して上述した基板処理装置１００と同様の構成を有しており、冗長を避けるために重複する記載を省略する。 Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. 7. FIG. 7 is a schematic view of the substrate processing apparatus 100 of the present embodiment. In the substrate processing apparatus 100 shown in FIG. 7, the nozzle 132n and the nozzle 134n can be moved integrally, the nozzle 136n and the nozzle 140n are integrated, and the heating member 150 can move up and down with respect to the substrate W. It has the same configuration as the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2 except that the gas is supplied to the back surface Wb of the substrate W, in order to avoid redundancy. Duplicate description is omitted.
　本実施形態の基板処理装置１００は、薬液供給部１３２のノズル１３２ｎおよびリンス液供給部１３４のノズル１３４ｎが取り付けられたアーム部材Ａ１をさらに備える。アーム部材Ａ１には、移動ユニットＴａが取り付けられる。移動ユニットＴａは、アーム部材Ａ１を移動させる。 The substrate processing device 100 of the present embodiment further includes an arm member A1 to which the nozzle 132n of the chemical solution supply unit 132 and the nozzle 134n of the rinse solution supply unit 134 are attached. A moving unit Ta is attached to the arm member A1. The moving unit Ta moves the arm member A1.
　移動ユニットＴａは、吐出位置と退避位置との間でアーム部材Ａ１を移動する。アーム部材Ａ１が吐出位置にある場合、アーム部材Ａ１は、基板Ｗの上方に位置する。アーム部材Ａ１が吐出位置にある場合、アーム部材Ａ１は、基板Ｗの上面Ｗａに向けて薬液およびリンス液を吐出する。アーム部材Ａ１が退避位置にある場合、アーム部材Ａ１は、基板Ｗよりも基板Ｗの径方向外側に位置する。 The moving unit Ta moves the arm member A1 between the discharge position and the retracted position. When the arm member A1 is in the discharge position, the arm member A1 is located above the substrate W. When the arm member A1 is in the discharge position, the arm member A1 discharges the chemical solution and the rinse solution toward the upper surface Wa of the substrate W. When the arm member A1 is in the retracted position, the arm member A1 is located radially outside the substrate W with respect to the substrate W.
　基板処理装置１００は、また、有機溶剤供給部１３６のノズル１３６ｎおよびガス供給部１４０のノズル１４０ｎが一体化したノズルＮ１をさらに備える。ノズルＮ１には、移動ユニットＴｎが取り付けられる。移動ユニットＴｎは、ノズルＮ１を移動させる。 The substrate processing apparatus 100 further includes a nozzle N1 in which a nozzle 136n of the organic solvent supply unit 136 and a nozzle 140n of the gas supply unit 140 are integrated. A moving unit Tn is attached to the nozzle N1. The moving unit Tn moves the nozzle N1.
　移動ユニットＴｎは、吐出位置と退避位置との間でノズルＮ１を移動する。ノズルＮ１が吐出位置にある場合、ノズルＮ１は、基板Ｗの上方に位置する。ノズルＮ１が吐出位置にある場合、ノズルＮ１は、基板Ｗの上面Ｗａに向けて有機溶剤およびガスを吐出する。ノズルＮ１が退避位置にある場合、ノズルＮ１は、基板Ｗよりも基板Ｗの径方向外側に位置する。 The moving unit Tn moves the nozzle N1 between the discharge position and the retracted position. When the nozzle N1 is in the discharge position, the nozzle N1 is located above the substrate W. When the nozzle N1 is in the discharge position, the nozzle N1 discharges the organic solvent and the gas toward the upper surface Wa of the substrate W. When the nozzle N1 is in the retracted position, the nozzle N1 is located radially outside the substrate W with respect to the substrate W.
　また、図７に示した基板処理装置１００は、ガス供給部１４０Ａをさらに備える。ガス供給部１４０Ａは、基板Ｗにガスを供給する。例えば、ガス供給部１４０Ａは、基板Ｗの裏面Ｗｂにガスを供給する。ガス供給部１４０Ａから供給されるガスは、例えば不活性ガスである。一例では、ガスは、窒素ガスを含む。 Further, the substrate processing apparatus 100 shown in FIG. 7 further includes a gas supply unit 140A. The gas supply unit 140A supplies gas to the substrate W. For example, the gas supply unit 140A supplies gas to the back surface Wb of the substrate W. The gas supplied from the gas supply unit 140A is, for example, an inert gas. In one example, the gas comprises nitrogen gas.
　ガス供給部１４０Ａは、配管１４０ｃと、バルブ１４０ｄと、ノズル１４０ｍとを含む。バルブ１４０ｄは、配管１４０ｃに配置される。配管１４０ｃは、ガスをチャンバー１１０内に導く。バルブ１４０ｄは、配管１４０ｃを開閉する。 The gas supply unit 140A includes a pipe 140c, a valve 140d, and a nozzle 140m. The valve 140d is arranged in the pipe 140c. The pipe 140c guides the gas into the chamber 110. The valve 140d opens and closes the pipe 140c.
　配管１４０ｃは、シャフト１２３の内孔および加熱部材１５０を貫通する。例えば、配管１４０ｃは、支持部１５５の内孔を貫通してもよい。典型的には、配管１４０ｃは、加熱部材１５０の上面１５０ａの中心を貫通する。このため、ノズル１４０ｍは、加熱部材１５０の上面１５０ａの中心に位置する。加熱部材１５０の上面１５０ａの中心から、基板Ｗの裏面Ｗｂに向けてガスが供給される。 The pipe 140c penetrates the inner hole of the shaft 123 and the heating member 150. For example, the pipe 140c may penetrate the inner hole of the support portion 155. Typically, the pipe 140c penetrates the center of the upper surface 150a of the heating member 150. Therefore, the nozzle 140m is located at the center of the upper surface 150a of the heating member 150. Gas is supplied from the center of the upper surface 150a of the heating member 150 toward the back surface Wb of the substrate W.
　また、基板処理装置１００は、加熱部材１５０を昇降する昇降ユニット１５８をさらに備える。昇降ユニット１５８は、加熱部材１５０を基板保持部１２０に対して上下に相対移動させる。加熱部材１５０が基板Ｗを加熱する場合、昇降ユニット１５８は加熱部材１５０が基板Ｗに近づくように加熱部材１５０を上昇させる。 Further, the substrate processing device 100 further includes an elevating unit 158 that elevates and elevates the heating member 150. The elevating unit 158 moves the heating member 150 up and down relative to the substrate holding portion 120. When the heating member 150 heats the substrate W, the elevating unit 158 raises the heating member 150 so that the heating member 150 approaches the substrate W.
　例えば、昇降ユニット１５８は、加熱部材１５０が基板Ｗに近接する位置（近接位置）まで加熱部材１５０を上昇できる。また、昇降ユニット１５８は、加熱部材１５０が上昇位置に対して基板Ｗから離れた位置（離間位置）まで加熱部材１５０を下降できる。 For example, the elevating unit 158 can raise the heating member 150 to a position (close position) where the heating member 150 is close to the substrate W. Further, the elevating unit 158 can lower the heating member 150 to a position (separated position) away from the substrate W with respect to the ascending position.
　加熱部材１５０が近接位置まで上昇すると、加熱部材１５０の上面１５０ａは基板Ｗの裏面Ｗｂから特定の間隔（典型的には０．５～３ｍｍ）まで近接する。加熱部材１５０が近接位置に到達することにより、基板Ｗの裏面Ｗｂは、加熱部材１５０からの熱輻射または基板Ｗの裏面Ｗｂと加熱部材１５０の上面１５０ａとの間の空間内流体熱伝導により加熱される。加熱部材１５０は、近接位置で、加熱部材１５０の上面１５０ａと基板Ｗの裏面Ｗｂとが平行になるように配置されることが好ましい。 When the heating member 150 rises to a close position, the upper surface 150a of the heating member 150 approaches the back surface Wb of the substrate W to a specific distance (typically 0.5 to 3 mm). When the heating member 150 reaches a close position, the back surface Wb of the substrate W is heated by heat radiation from the heating member 150 or by fluid heat conduction in the space between the back surface Wb of the substrate W and the upper surface 150a of the heating member 150. Will be done. It is preferable that the heating member 150 is arranged at a close position so that the upper surface 150a of the heating member 150 and the back surface Wb of the substrate W are parallel to each other.
　なお、ここでは、加熱部材１５０が基板Ｗに近接する位置まで加熱部材１５０を上昇したが、加熱部材１５０は、基板Ｗに接触する位置まで加熱部材１５０を上昇してもよい。 Although the heating member 150 is raised to a position close to the substrate W here, the heating member 150 may be raised to a position where the heating member 150 is in contact with the substrate W.
　本実施形態の基板処理装置１００では、ノズル１３２ｎとノズル１３４ｎとがアーム部材Ａ１に取り付けられている。薬液およびリンス液は連続して使用することが多いため、ノズルの移動に要する時間を短縮できる。また、基板処理装置１００では、ノズル１３６ｎとノズル１４０ｎとが一体化されたノズルＮ１が設けられている。有機溶剤およびガスは連続して使用することが多いため、ノズルの移動に要する時間を短縮できる。 In the substrate processing apparatus 100 of the present embodiment, the nozzle 132n and the nozzle 134n are attached to the arm member A1. Since the chemical solution and the rinse solution are often used continuously, the time required for moving the nozzle can be shortened. Further, in the substrate processing apparatus 100, a nozzle N1 in which a nozzle 136n and a nozzle 140n are integrated is provided. Since the organic solvent and gas are often used continuously, the time required for moving the nozzle can be shortened.
　本実施形態の基板処理装置１００では、ガス供給部１４０Ａにより、基板Ｗの裏面Ｗｂにガスを供給できる。このため、基板Ｗの裏面Ｗｂおよび／または加熱部材１５０に付着物が付着することを抑制できる。 In the substrate processing apparatus 100 of the present embodiment, the gas supply unit 140A can supply gas to the back surface Wb of the substrate W. Therefore, it is possible to prevent the deposits from adhering to the back surface Wb and / or the heating member 150 of the substrate W.
　また、本実施形態の基板処理装置１００では、昇降ユニット１５８は、加熱部材１５０と基板Ｗとの距離を短くできる。このため、加熱部材１５０は、より少ない電力で基板Ｗを効率的に加熱できる。 Further, in the substrate processing device 100 of the present embodiment, the elevating unit 158 can shorten the distance between the heating member 150 and the substrate W. Therefore, the heating member 150 can efficiently heat the substrate W with less electric power.
　なお、図１～図７を参照した上述の説明では、薬液供給部１３２は、一種類の薬液を供給したが、本実施形態はこれに限定されない。薬液供給部１３２は、複数の薬液を別個に供給してもよい。 In the above description with reference to FIGS. 1 to 7, the chemical solution supply unit 132 supplied one type of chemical solution, but the present embodiment is not limited to this. The chemical solution supply unit 132 may supply a plurality of chemical solutions separately.
　次に、図８を参照して、本実施形態の基板処理装置１００を説明する。図８は、本実施形態の基板処理装置１００の模式図である。図８に示した基板処理装置１００は、薬液供給部１３２が第１薬液供給部１３２Ａおよび第２薬液供給部１３２Ｂを含む点を除いて、図１、２を参照して上述した基板処理装置１００と同様の構成を有しており、冗長を避けるために重複する記載を省略する。 Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. FIG. 8 is a schematic view of the substrate processing apparatus 100 of the present embodiment. The substrate processing apparatus 100 shown in FIG. 8 is the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2, except that the chemical solution supply unit 132 includes the first chemical solution supply unit 132A and the second chemical solution supply unit 132B. It has the same configuration as the above, and duplicated description is omitted to avoid redundancy.
　本実施形態の基板処理装置１００において、薬液供給部１３２は、第１薬液供給部１３２Ａおよび第２薬液供給部１３２Ｂを含む。第１薬液供給部１３２Ａは、第１薬液を供給する。第２薬液供給部１３２Ｂは、第１薬液とは異なる第２薬液を供給する。 In the substrate processing apparatus 100 of the present embodiment, the chemical solution supply unit 132 includes the first chemical solution supply unit 132A and the second chemical solution supply unit 132B. The first chemical supply unit 132A supplies the first chemical solution. The second chemical supply unit 132B supplies a second chemical solution different from the first chemical solution.
　第１薬液供給部１３２Ａは、配管１３２ｃと、バルブ１３２ｄと、ノズル１３２ｐとを含む。ノズル１３２ｐは、基板Ｗの上面Ｗａに薬液を吐出する。ノズル１３２ｐは、配管１３２ｃに接続される。配管１３２ｃには、供給源から第１薬液が供給される。バルブ１３２ｄは、配管１３２ｃ内の流路を開閉する。 The first chemical supply unit 132A includes a pipe 132c, a valve 132d, and a nozzle 132p. The nozzle 132p discharges the chemical solution onto the upper surface Wa of the substrate W. The nozzle 132p is connected to the pipe 132c. The first chemical solution is supplied to the pipe 132c from the supply source. The valve 132d opens and closes the flow path in the pipe 132c.
　第２薬液供給部１３２Ｂは、配管１３２ｅと、バルブ１３２ｆと、ノズル１３２ｑとを含む。ノズル１３２ｑは、基板Ｗの上面Ｗａに薬液を吐出する。ノズル１３２ｑは、配管１３２ｅに接続される。配管１３２ｅには、供給源から第２薬液が供給される。バルブ１３２ｆは、配管１３２ｅ内の流路を開閉する。 The second chemical supply unit 132B includes a pipe 132e, a valve 132f, and a nozzle 132q. The nozzle 132q discharges the chemical solution onto the upper surface Wa of the substrate W. The nozzle 132q is connected to the pipe 132e. The second chemical solution is supplied to the pipe 132e from the supply source. The valve 132f opens and closes the flow path in the pipe 132e.
　ここでは、ノズル１３２ｐおよびノズル１３２ｑは、ノズル１３４ｎとともにアーム部材Ａ１に取り付けられている。アーム部材Ａ１は、移動ユニットＴａによって移動可能である。 Here, the nozzle 132p and the nozzle 132q are attached to the arm member A1 together with the nozzle 134n. The arm member A1 can be moved by the moving unit Ta.
　第１薬液供給部１３２Ａおよび第２薬液供給部１３２Ｂは、加熱部材１５０の清浄処理に好適に用いられる。例えば、第１薬液および第２薬液の一方は、付着物の組成を変化させる液であり、第１薬液および第２薬液の他方は、組成の変化した付着物を剥離するための液である。例えば、付着物がチタン（Ｔｉ）を含む場合、第１薬液として過酸化水素水を用いて、第２薬液としてフッ酸を用いてもよい。この場合、第１薬液および第２薬液は、同時に吐出されず、異なるタイミングで吐出してもよい。 The first chemical solution supply unit 132A and the second chemical solution supply unit 132B are suitably used for cleaning the heating member 150. For example, one of the first chemical solution and the second chemical solution is a solution that changes the composition of the deposit, and the other of the first chemical solution and the second chemical solution is a solution for peeling off the deposit whose composition has changed. For example, when the deposit contains titanium (Ti), hydrogen peroxide solution may be used as the first chemical solution and hydrofluoric acid may be used as the second chemical solution. In this case, the first chemical solution and the second chemical solution are not discharged at the same time, and may be discharged at different timings.
　ただし、第１薬液および第２薬液は、同時に吐出されてもよい。例えば、付着物がコバルト（Ｃｏ）を含む場合、第１薬液として過酸化水素水を用いて、第２薬液として塩酸を用いてもよい。また、付着物がタングステン（Ｗ）を含む場合も、第１薬液として過酸化水素水を用いて、第２薬液として塩酸を用いてもよい。あるいは、付着物がタングステン（Ｗ）を含む場合、第１薬液として過酸化水素水を用いて、第２薬液としてアンモニア水を用いてもよい。さらには、付着物がガリウム（Ｇａ）を含む場合、第１薬液として濃塩酸を用いて、第２薬液として濃硝酸を用いてもよい。 However, the first chemical solution and the second chemical solution may be discharged at the same time. For example, when the deposit contains cobalt (Co), hydrogen peroxide solution may be used as the first chemical solution and hydrochloric acid may be used as the second chemical solution. Further, when the deposit contains tungsten (W), hydrogen peroxide solution may be used as the first chemical solution and hydrochloric acid may be used as the second chemical solution. Alternatively, when the deposit contains tungsten (W), hydrogen peroxide solution may be used as the first chemical solution and ammonia water may be used as the second chemical solution. Furthermore, when the deposit contains gallium (Ga), concentrated hydrochloric acid may be used as the first chemical solution and concentrated nitric acid may be used as the second chemical solution.
　なお、第１薬液および第２薬液のそれぞれが単独で付着物に対して異なる影響を及ぼす場合、第１薬液および第２薬液は、異なるタイミングで供給されることが好ましい。 When each of the first chemical solution and the second chemical solution has different effects on the deposits independently, it is preferable that the first chemical solution and the second chemical solution are supplied at different timings.
　次に、図８および図９を参照して本実施形態の加熱部材１５０の清浄方法を説明する。図９は、加熱部材１５０の清浄方法を説明するためのフロー図である。 Next, a cleaning method of the heating member 150 of the present embodiment will be described with reference to FIGS. 8 and 9. FIG. 9 is a flow chart for explaining a cleaning method of the heating member 150.
　ステップＳ４２に示すように、加熱部材１５０にリンス液を供給する。例えば、リンス液供給部１３４は、加熱部材１５０の上面１５０ａにリンス液を供給する。典型的には、リンス液供給部１３４は、加熱部材１５０の上面１５０ａの中央にリンス液を供給する。次に、処理は、ステップＳ４４に進む。 As shown in step S42, the rinse liquid is supplied to the heating member 150. For example, the rinse liquid supply unit 134 supplies the rinse liquid to the upper surface 150a of the heating member 150. Typically, the rinse liquid supply unit 134 supplies the rinse liquid to the center of the upper surface 150a of the heating member 150. Next, the process proceeds to step S44.
　ステップＳ４４に示すように、ガス供給部１４０は、加熱部材１５０にガスを供給する。例えば、ガス供給部１４０は、加熱部材１５０の上面１５０ａの中央にガスを供給する。ガスの供給により、リンス液は、加熱部材１５０の上面１５０ａにおいてリング状に広がる。このとき、カップ１８０は、加熱部材１５０の側方を覆う位置に配置されていることが好ましい。次に、処理は、ステップＳ４６に進む。 As shown in step S44, the gas supply unit 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. Due to the supply of gas, the rinse liquid spreads in a ring shape on the upper surface 150a of the heating member 150. At this time, the cup 180 is preferably arranged at a position that covers the side of the heating member 150. Next, the process proceeds to step S46.
　ステップＳ４６に示すように、加熱部材１５０の第１位置に第１薬液を供給する。第１薬液は、過酸化水素水を含む。例えば、第１薬液供給部１３２Ａは、加熱部材１５０の上面１５０ａのリンス液に向けて第１薬液を供給する。これにより、第１薬液は、加熱部材１５０の上面１５０ａのリンス液と混合して、リング状のリンス液内を拡散する。次に、処理は、ステップＳ４８に進む。 As shown in step S46, the first chemical solution is supplied to the first position of the heating member 150. The first chemical solution contains a hydrogen peroxide solution. For example, the first chemical supply unit 132A supplies the first chemical solution toward the rinse liquid on the upper surface 150a of the heating member 150. As a result, the first chemical solution mixes with the rinsing solution on the upper surface 150a of the heating member 150 and diffuses in the ring-shaped rinsing solution. Next, the process proceeds to step S48.
　ステップＳ４８に示すように、加熱部材１５０の第２位置に第１薬液を供給する。例えば、第１薬液供給部１３２Ａは、加熱部材１５０の上面１５０ａのリンス液に向けて第１薬液を供給する。これにより、第１薬液は、加熱部材１５０の上面１５０ａのリンス液と混合して、リング状のリンス液内を拡散する。次に、処理は、ステップＳ５０に進む。 As shown in step S48, the first chemical solution is supplied to the second position of the heating member 150. For example, the first chemical supply unit 132A supplies the first chemical solution toward the rinse liquid on the upper surface 150a of the heating member 150. As a result, the first chemical solution mixes with the rinsing solution on the upper surface 150a of the heating member 150 and diffuses in the ring-shaped rinsing solution. Next, the process proceeds to step S50.
　ステップＳ５０に示すように、ガス供給部１４０は、加熱部材１５０にガスを供給する。例えば、ガス供給部１４０は、加熱部材１５０の上面１５０ａの中央にガスを供給する。これにより、加熱部材１５０の上面１５０ａのリンス液および第１薬液は排出される。次に、処理は、ステップＳ５２に進む。 As shown in step S50, the gas supply unit 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. As a result, the rinsing solution and the first chemical solution on the upper surface 150a of the heating member 150 are discharged. Next, the process proceeds to step S52.
　ステップＳ５２に示すように、加熱部材１５０にリンス液を供給する。例えば、リンス液供給部１３４は、加熱部材１５０の上面１５０ａにリンス液を供給する。典型的には、リンス液供給部１３４は、加熱部材１５０の上面１５０ａの中央にリンス液を供給する。次に、処理は、ステップＳ５４に進む。 As shown in step S52, the rinse liquid is supplied to the heating member 150. For example, the rinse liquid supply unit 134 supplies the rinse liquid to the upper surface 150a of the heating member 150. Typically, the rinse liquid supply unit 134 supplies the rinse liquid to the center of the upper surface 150a of the heating member 150. Next, the process proceeds to step S54.
　ステップＳ５４に示すように、ガス供給部１４０は、加熱部材１５０にガスを供給する。例えば、ガス供給部１４０は、加熱部材１５０の上面１５０ａの中央にガスを供給する。ガスの供給により、リンス液は、加熱部材１５０の上面１５０ａにおいてリング状に広がる。このとき、カップ１８０は、加熱部材１５０の側方を覆う位置に配置されていることが好ましい。次に、処理は、ステップＳ５６に進む。 As shown in step S54, the gas supply unit 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. Due to the supply of gas, the rinse liquid spreads in a ring shape on the upper surface 150a of the heating member 150. At this time, the cup 180 is preferably arranged at a position that covers the side of the heating member 150. Next, the process proceeds to step S56.
　ステップＳ５６に示すように、加熱部材１５０の第１位置に第２薬液を供給する。第２薬液は、フッ酸を含む。例えば、第２薬液供給部１３２Ｂは、加熱部材１５０の上面１５０ａのリンス液に向けて第２薬液を供給する。これにより、第２薬液は、加熱部材１５０の上面１５０ａのリンス液と混合して、リング状のリンス液内を拡散する。次に、処理は、ステップＳ５８に進む。 As shown in step S56, the second chemical solution is supplied to the first position of the heating member 150. The second chemical solution contains hydrofluoric acid. For example, the second chemical supply unit 132B supplies the second chemical solution toward the rinse liquid on the upper surface 150a of the heating member 150. As a result, the second chemical solution is mixed with the rinsing solution on the upper surface 150a of the heating member 150 and diffused in the ring-shaped rinsing solution. Next, the process proceeds to step S58.
　ステップＳ５８に示すように、加熱部材１５０の第２位置に第２薬液を供給する。例えば、第２薬液供給部１３２Ｂは、加熱部材１５０の上面１５０ａのリンス液に向けて第２薬液を供給する。これにより、第２薬液は、加熱部材１５０の上面１５０ａのリンス液と混合して、リング状のリンス液内を拡散する。次に、処理は、ステップＳ６０に進む。 As shown in step S58, the second chemical solution is supplied to the second position of the heating member 150. For example, the second chemical supply unit 132B supplies the second chemical solution toward the rinse liquid on the upper surface 150a of the heating member 150. As a result, the second chemical solution is mixed with the rinsing solution on the upper surface 150a of the heating member 150 and diffused in the ring-shaped rinsing solution. Next, the process proceeds to step S60.
　ステップＳ６０に示すように、ガス供給部１４０は、加熱部材１５０にガスを供給する。例えば、ガス供給部１４０は、加熱部材１５０の上面１５０ａの中央にガスを供給する。これにより、加熱部材１５０の上面１５０ａのリンス液および第２薬液は排出される。以上により、加熱部材１５０の上面を清浄にできる。 As shown in step S60, the gas supply unit 140 supplies gas to the heating member 150. For example, the gas supply unit 140 supplies gas to the center of the upper surface 150a of the heating member 150. As a result, the rinsing solution and the second chemical solution on the upper surface 150a of the heating member 150 are discharged. As described above, the upper surface of the heating member 150 can be cleaned.
　なお、図９を参照した説明では、過酸化水素水を含む第１薬液を用いた後で、フッ酸を含む第２薬液を用いたが、本実施形態はこれに限定されない。先にフッ酸を含む第２薬液を用いた後で、過酸化水素水を含む第１薬液を用いてもよい。例えば、不純物の表面において金属が露出している場合、過酸化水素水を含む第１薬液を用いた後で、フッ酸を含む第２薬液を用いることが好ましい。一方、不純物の表面において金属酸化物が露出している場合、フッ酸を含む第２薬液を用いた後で、過酸化水素水を含む第１薬液を用いることが好ましい。 In the explanation with reference to FIG. 9, the first chemical solution containing hydrogen peroxide solution was used, and then the second chemical solution containing hydrofluoric acid was used, but the present embodiment is not limited to this. The second chemical solution containing hydrofluoric acid may be used first, and then the first chemical solution containing hydrogen peroxide solution may be used. For example, when the metal is exposed on the surface of the impurity, it is preferable to use the first chemical solution containing hydrogen peroxide solution and then the second chemical solution containing hydrofluoric acid. On the other hand, when the metal oxide is exposed on the surface of the impurity, it is preferable to use the second chemical solution containing hydrofluoric acid and then the first chemical solution containing hydrogen peroxide solution.
　次に、図１０を参照して、本実施形態の基板処理装置１００を説明する。図１０は、本実施形態の基板処理装置１００の模式図である。図１０に示した基板処理装置１００は、支持部およびリフトピンを備えるとともにチャック部材１２２の一部が回動可能である点を除いて、図１、２を参照して上述した基板処理装置１００と同様の構成を有しており、冗長を避けるために重複する記載を省略する。 Next, the substrate processing apparatus 100 of the present embodiment will be described with reference to FIG. FIG. 10 is a schematic view of the substrate processing apparatus 100 of the present embodiment. The substrate processing apparatus 100 shown in FIG. 10 is the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2, except that the substrate processing apparatus 100 includes a support portion and a lift pin and a part of the chuck member 122 is rotatable. It has a similar configuration, and duplicate descriptions are omitted to avoid redundancy.
　本実施形態の基板処理装置１００において、基板保持部１２０は、支持軸１２６と、支持軸１２６に連結されたリフトピン１２７とをさらに備える。支持軸１２６は、鉛直方向に延びた円筒形状であり、支持軸１２６は、シャフト１２３の内孔に配置される。支持軸１２６の内孔には、支持部１５５が配置される。支持軸１２６から、少なくとも３本のリフトピン１２７が伸びている。リフトピン１２７は、支持軸１２６の上方において径方向外側に延び、その先端において鉛直上方に延びている。 In the substrate processing apparatus 100 of the present embodiment, the substrate holding portion 120 further includes a support shaft 126 and a lift pin 127 connected to the support shaft 126. The support shaft 126 has a cylindrical shape extending in the vertical direction, and the support shaft 126 is arranged in an inner hole of the shaft 123. A support portion 155 is arranged in the inner hole of the support shaft 126. At least three lift pins 127 extend from the support shaft 126. The lift pin 127 extends radially outward above the support shaft 126 and extends vertically upward at its tip.
　加熱部材１５０には、少なくとも３か所の貫通孔１５０ｈが設けられている。貫通孔１５０ｈは、加熱部材１５０の上面１５０ａと裏面１５０ｂとを連絡する。貫通孔１５０ｈの位置、大きさおよび数は、リフトピン１２７の位置、大きさおよび数に対応して設けられており、貫通孔１５０ｈは、リフトピン１２７を通過可能なように構成される。 The heating member 150 is provided with at least three through holes 150h. The through hole 150h connects the upper surface 150a and the back surface 150b of the heating member 150. The position, size and number of the through holes 150h are provided corresponding to the position, size and number of the lift pins 127, and the through holes 150h are configured so as to be able to pass through the lift pins 127.
　本実施形態の基板処理装置１００は、支持軸１２６を昇降可能な昇降ユニット１５８Ａをさらに備える。昇降ユニット１５８Ａが支持軸１２６を移動させることにより、リフトピン１２７は、加熱部材１５０を貫通する。昇降ユニット１５８Ａが支持軸１２６を下降する場合、リフトピン１２７が加熱部材１５０の上面１５０ａから突出しない。一方、昇降ユニット１５８Ａが支持軸１２６を上昇する場合、リフトピン１２７が加熱部材１５０の上面１５０ａから突出する。この場合、リフトピン１２７の上端は、チャック部材１２２の上端よりも鉛直上方に位置する。 The substrate processing device 100 of the present embodiment further includes an elevating unit 158A capable of elevating and lowering the support shaft 126. The lift pin 127 penetrates the heating member 150 as the elevating unit 158A moves the support shaft 126. When the elevating unit 158A descends the support shaft 126, the lift pin 127 does not protrude from the upper surface 150a of the heating member 150. On the other hand, when the elevating unit 158A raises the support shaft 126, the lift pin 127 protrudes from the upper surface 150a of the heating member 150. In this case, the upper end of the lift pin 127 is located vertically above the upper end of the chuck member 122.
　リフトピン１２７の上端は、チャック部材１２２の上端よりも鉛直上方に位置できる。このため、センターロボットＣＲが基板Ｗをチャンバー１１０に対して搬入および／または搬出する場合、センターロボットＣＲは、基板Ｗをリフトピン１２７に支持されるように渡すことができる。 The upper end of the lift pin 127 can be positioned vertically above the upper end of the chuck member 122. Therefore, when the center robot CR carries in and / or carries out the substrate W to the chamber 110, the center robot CR can pass the substrate W so as to be supported by the lift pin 127.
　チャック部材１２２は、本体部１２２ａと、複数の回動部１２２ｂとを有する。本体部１２２ａは、スピンベース１２１に対して鉛直上方に延びている。回動部１２２ｂは、本体部１２２ａの鉛直上方の先端に設けられる。回動部１２２ｂは、本体部１２２ａに対して基板Ｗの円周方向に回動可能である。このため、複数の回動部１２２ｂが、内側を向いた場合、基板Ｗは、回動部１２２ｂによって支持される。また、複数の回動部１２２ｂが外側を向いた場合、基板Ｗは、回動部１２２ｂによって支持されない。したがって、複数の回動部１２２ｂが外側を向いた状態で、昇降ユニット１５８Ａが基板Ｗを保持するリフトピン１２７を下降すると、基板Ｗを加熱部材１５０の上面１５０ａに載置できる。これにより、加熱部材１５０の熱を基板Ｗに充分に伝達できる。 The chuck member 122 has a main body portion 122a and a plurality of rotating portions 122b. The main body portion 122a extends vertically upward with respect to the spin base 121. The rotating portion 122b is provided at the tip vertically above the main body portion 122a. The rotating portion 122b is rotatable with respect to the main body portion 122a in the circumferential direction of the substrate W. Therefore, when the plurality of rotating portions 122b face inward, the substrate W is supported by the rotating portions 122b. Further, when the plurality of rotating portions 122b face outward, the substrate W is not supported by the rotating portions 122b. Therefore, when the elevating unit 158A lowers the lift pin 127 holding the substrate W with the plurality of rotating portions 122b facing outward, the substrate W can be placed on the upper surface 150a of the heating member 150. As a result, the heat of the heating member 150 can be sufficiently transferred to the substrate W.
　なお、図３～図１０を参照した上述の説明では、加熱部材１５０のヒーター１５４は、抵抗体であったが、本実施形態はこれに限定されない。加熱部材１５０は、加熱時に光を照射してもよい。 In the above description with reference to FIGS. 3 to 10, the heater 154 of the heating member 150 is a resistor, but the present embodiment is not limited to this. The heating member 150 may be irradiated with light during heating.
　次に、図１１を参照して、本実施形態の基板処理装置１００を説明する。図１２は、本実施形態の基板処理装置１００の模式図である。図１１に示した基板処理装置１００は、加熱部材１５０が加熱時に光を照射する点を除いて、図１、２を参照して上述した基板処理装置１００と同様の構成を有しており、冗長を避けるために重複する記載を省略する。 Next, the substrate processing apparatus 100 of the present embodiment will be described with reference to FIG. FIG. 12 is a schematic view of the substrate processing apparatus 100 of the present embodiment. The substrate processing apparatus 100 shown in FIG. 11 has the same configuration as the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2, except that the heating member 150 irradiates light during heating. Duplicate description is omitted to avoid redundancy.
　図１１に示すように、加熱部材１５０は、基板保持部１２０に保持された基板Ｗの下方に配置される。加熱部材１５０は、複数のランプ１５０Ｌを有しており、基板保持部１２０の上方に設けられる。各ランプ１５０Ｌが点灯することにより、基板保持部１２０によって保持される基板Ｗの裏面Ｗｂは、ランプ１５０Ｌからの光によって照射される。 As shown in FIG. 11, the heating member 150 is arranged below the substrate W held by the substrate holding portion 120. The heating member 150 has a plurality of lamps 150L and is provided above the substrate holding portion 120. When each lamp 150L is turned on, the back surface Wb of the substrate W held by the substrate holding portion 120 is irradiated with the light from the lamp 150L.
　ここで、加熱部材１５０は、例えば、直管タイプのランプ１５０Ｌを複数本並列に設けたものであってもよい。あるいは、加熱部材１５０は、電球タイプのランプ１５０Ｌを複数個アレイ状に設けたものであってもよい。また、ランプ１５０Ｌとしては、例えば、ハロゲンランプまたはキセノンフラッシュランプを用いることが可能である。 Here, the heating member 150 may be, for example, a plurality of straight tube type lamps 150L provided in parallel. Alternatively, the heating member 150 may be a plurality of light bulb type lamps 150L provided in an array. Further, as the lamp 150L, for example, a halogen lamp or a xenon flash lamp can be used.
　加熱部材１５０としては、基板保持部１２０上の基板Ｗに対して電磁波を照射する各種の照射部材を用いることが可能である。例えば、光を照射するランプ１５０Ｌ以外にも、例えば、基板保持部１２０上の基板Ｗに対して、遠赤外線を照射する遠赤ヒーターまたはマイクロ波を照射するマイクロ波ヒーターを用いてもよい。 As the heating member 150, various irradiation members that irradiate the substrate W on the substrate holding portion 120 with electromagnetic waves can be used. For example, in addition to the lamp 150L that irradiates light, for example, a far-infrared heater that irradiates far infrared rays or a microwave heater that irradiates microwaves on the substrate W on the substrate holding portion 120 may be used.
　なお、基板処理装置１００は、加熱部材１５０の上面１５０ａにおける付着物に応じて加熱部材１５０の清浄処理を開始してもよい。例えば、基板処理装置１００は、加熱部材１５０の上面１５０ａを撮像して加熱部材１５０の上面１５０ａの清浄処理を開始してもよい。 Note that the substrate processing device 100 may start the cleaning treatment of the heating member 150 according to the deposits on the upper surface 150a of the heating member 150. For example, the substrate processing device 100 may take an image of the upper surface 150a of the heating member 150 and start cleaning the upper surface 150a of the heating member 150.
　次に、図１２を参照して、本実施形態の基板処理装置１００を説明する。図１２は、本実施形態の基板処理装置１００の模式図である。図１２に示した基板処理装置１００は、撮像部１９０をさらに備える点を除いて、図１、２を参照して上述した基板処理装置１００と同様の構成を有しており、冗長を避けるために重複する記載を省略する。 Next, the substrate processing apparatus 100 of this embodiment will be described with reference to FIG. FIG. 12 is a schematic view of the substrate processing apparatus 100 of the present embodiment. The substrate processing apparatus 100 shown in FIG. 12 has the same configuration as the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2 except that the imaging unit 190 is further provided, in order to avoid redundancy. The description duplicated in is omitted.
　撮像部１９０は、チャンバー１１０内に配置される。撮像部１９０は、加熱部材１５０の上面１５０ａを撮像して画像データを生成する。制御装置１０１は、撮像部１９０の撮像結果に応じて加熱部材１５０の清浄処理を開始する。例えば、制御装置１０１は、撮像部１９０によって生成された画像データから、加熱部材１５０の上面１５０ａに付着物が付着しているか否か判定し、加熱部材１５０の上面１５０ａに付着物が付着している場合、加熱部材１５０の清浄処理を開始する。 The imaging unit 190 is arranged in the chamber 110. The image capturing unit 190 images the upper surface 150a of the heating member 150 to generate image data. The control device 101 starts the cleaning process of the heating member 150 according to the imaging result of the imaging unit 190. For example, the control device 101 determines from the image data generated by the imaging unit 190 whether or not deposits are attached to the upper surface 150a of the heating member 150, and the deposits are attached to the upper surface 150a of the heating member 150. If so, the cleaning process of the heating member 150 is started.
　次に、図１２および図１３を参照して本実施形態の基板処理装置による基板処理方法を説明する。図１３は、本実施形態の基板処理装置による基板処理方法を説明するためのフローチャートである。 Next, a substrate processing method using the substrate processing apparatus of the present embodiment will be described with reference to FIGS. 12 and 13. FIG. 13 is a flowchart for explaining a substrate processing method by the substrate processing apparatus of the present embodiment.
　ステップＳｂ１において、撮像部１９０は、加熱部材１５０の上面１５０ａを撮像する。その後、処理は、ステップＳｂ２に進む。 In step Sb1, the imaging unit 190 images the upper surface 150a of the heating member 150. After that, the process proceeds to step Sb2.
　ステップＳｂ２において、制御部１０２は、撮像部１９０の撮像結果に基づいて加熱部材１５０を清浄にするか否かを判定する。例えば、制御部１０２は、撮像部１９０によって生成された画像データを解析して、加熱部材１５０に付着物が付着しているか否か判定する。画像データに示された加熱部材１５０の上面１５０ａの色が、当初の加熱部材１５０の色と異なる色である場合、制御部１０２は、加熱部材１５０に付着物が付着していると判定する。あるいは、画像データに示された加熱部材１５０の形状が、当初の加熱部材１５０の形状と異なる場合、制御部１０２は、加熱部材１５０に付着物が付着していると判定する。 In step Sb2, the control unit 102 determines whether or not to clean the heating member 150 based on the imaging result of the imaging unit 190. For example, the control unit 102 analyzes the image data generated by the image pickup unit 190 to determine whether or not deposits are attached to the heating member 150. When the color of the upper surface 150a of the heating member 150 shown in the image data is different from the color of the initial heating member 150, the control unit 102 determines that deposits are attached to the heating member 150. Alternatively, when the shape of the heating member 150 shown in the image data is different from the shape of the initial heating member 150, the control unit 102 determines that deposits are attached to the heating member 150.
　加熱部材１５０を清浄にすると判定される場合（ステップＳｂ２においてＹｅｓ）、処理はステップＳｐ１に進む。加熱部材１５０を清浄にしないと判定される場合（ステップＳｂ２においてＮｏ）、処理は基板処理工程Ｓａに進む。 If it is determined that the heating member 150 is to be cleaned (Yes in step Sb2), the process proceeds to step Sp1. When it is determined that the heating member 150 is not cleaned (No in step Sb2), the process proceeds to the substrate processing step Sa.
　ステップＳｐ１において、加熱部材１５０を清浄にする。例えば、制御部１０２は、図６のステップＳ１２～Ｓ１８を実行して加熱部材１５０を清浄にする。その後、処理は、基板処理工程Ｓａに進む。 In step Sp1, the heating member 150 is cleaned. For example, the control unit 102 executes steps S12 to S18 of FIG. 6 to clean the heating member 150. After that, the processing proceeds to the substrate processing step Sa.
　基板処理工程Ｓａにおいて、基板Ｗを処理する。制御部１０２は、図６のステップＳａ１～Ｓａ８を実行して基板Ｗを処理する。その後、処理は、ステップＳｂ３に進む。 In the substrate processing step Sa, the substrate W is processed. The control unit 102 executes the steps Sa1 to Sa8 of FIG. 6 to process the substrate W. After that, the process proceeds to step Sb3.
　ステップＳｂ３において、撮像部１９０は、加熱部材１５０の上面１５０ａを撮像する。その後、処理は、ステップＳｂ４に進む。 In step Sb3, the imaging unit 190 images the upper surface 150a of the heating member 150. After that, the process proceeds to step Sb4.
　ステップＳｂ４において、制御部１０２は、撮像部１９０の撮像結果に基づいて加熱部材１５０を清浄にするか否かを判定する。例えば、制御部１０２は、撮像部１９０によって生成された画像データを解析して、加熱部材１５０に付着物が付着しているか否か判定する。加熱部材１５０を清浄にすると判定される場合（ステップＳｂ４においてＹｅｓ）、処理はステップＳｐ２に進む。加熱部材１５０を清浄にしないと判定される場合（ステップＳｂ４においてＮｏ）、処理はステップＳｂ５に進む。 In step Sb4, the control unit 102 determines whether or not to clean the heating member 150 based on the imaging result of the imaging unit 190. For example, the control unit 102 analyzes the image data generated by the image pickup unit 190 to determine whether or not deposits are attached to the heating member 150. If it is determined that the heating member 150 is to be cleaned (Yes in step Sb4), the process proceeds to step Sp2. If it is determined that the heating member 150 is not cleaned (No in step Sb4), the process proceeds to step Sb5.
　ステップＳｐ２において、加熱部材１５０を清浄にする。例えば、制御部１０２は、図６のステップＳ１２～Ｓ１８を実行して加熱部材１５０を清浄にする。その後、処理は、ステップＳｂ５に進む。 In step Sp2, the heating member 150 is cleaned. For example, the control unit 102 executes steps S12 to S18 of FIG. 6 to clean the heating member 150. After that, the process proceeds to step Sb5.
　ステップＳｂ５において、制御部１０２は、処理すべき他の基板Ｗがあるかを判定する。例えば、処理すべき基板Ｗがあると判定される場合（ステップＳｂ５においてＹｅｓ）、処理は基板処理工程Ｓａに戻る。処理すべき基板Ｗがないと判定される場合（ステップＳｂ５においてＮｏ）、処理は終了する。以上のようにして、基板処理および加熱部材１５０の清浄処理を実行できる。本実施形態によれば、撮像部１９０によって撮像した結果に基づいて加熱部材１５０の清浄処理を行うか否かを判定するため、必要性に応じて加熱部材１５０を清浄にできる。 In step Sb5, the control unit 102 determines whether there is another substrate W to be processed. For example, when it is determined that there is a substrate W to be processed (Yes in step Sb5), the processing returns to the substrate processing step Sa. When it is determined that there is no substrate W to be processed (No in step Sb5), the processing ends. As described above, the substrate treatment and the cleaning treatment of the heating member 150 can be executed. According to the present embodiment, in order to determine whether or not to perform the cleaning process of the heating member 150 based on the result of imaging by the imaging unit 190, the heating member 150 can be cleaned as needed.
　なお、図１～図１３を参照した上述の説明では、基板Ｗは回転する一方で、加熱部材１５０は、回転しなかったが、本実施形態はこれに限定されない。加熱部材１５０は回転してもよい。 In the above description with reference to FIGS. 1 to 13, the substrate W rotates while the heating member 150 does not rotate, but the present embodiment is not limited to this. The heating member 150 may rotate.
　次に、図１４を参照して、本実施形態の基板処理装置１００を説明する。図１４は、本実施形態の基板処理装置１００の模式図である。図１４に示した基板処理装置１００は、加熱部材１５０が回転する点を除いて、図１、２を参照して上述した基板処理装置１００と同様の構成を有しており、冗長を避けるために重複する記載を省略する。 Next, the substrate processing apparatus 100 of the present embodiment will be described with reference to FIG. FIG. 14 is a schematic view of the substrate processing apparatus 100 of the present embodiment. The substrate processing apparatus 100 shown in FIG. 14 has the same configuration as the substrate processing apparatus 100 described above with reference to FIGS. 1 and 2 except that the heating member 150 rotates, in order to avoid redundancy. The description duplicated in is omitted.
　基板処理装置１００は、加熱部材１５０を回転させるための電動モーター１５９をさらに備える。電動モーター１５９は、支持部１５５に連結されている。電動モーター１５９により、加熱部材１５０は回転される。制御部１０２は、電動モーター１５９を制御することにより、加熱部材１５０を回転する。 The substrate processing device 100 further includes an electric motor 159 for rotating the heating member 150. The electric motor 159 is connected to the support portion 155. The heating member 150 is rotated by the electric motor 159. The control unit 102 rotates the heating member 150 by controlling the electric motor 159.
　本実施形態の基板処理装置１００では、電動モーター１５９によって加熱部材１５０が回転可能であるため、加熱部材１５０の清浄工程において、加熱部材１５０の上面１５０ａにガスを供給しなくてもよい。詳細には、加熱部材１５０の上面１５０ａの外周部に薬液を供給した後、加熱部材１５０が回転することにより、加熱部材１５０の上面１５０ａにガスを供給しなくても、加熱部材１５０の上面１５０ａから薬液を排出できる。 In the substrate processing device 100 of the present embodiment, since the heating member 150 can be rotated by the electric motor 159, it is not necessary to supply gas to the upper surface 150a of the heating member 150 in the cleaning process of the heating member 150. Specifically, after supplying the chemical solution to the outer peripheral portion of the upper surface 150a of the heating member 150, the heating member 150 rotates so that the upper surface 150a of the heating member 150 does not need to supply gas to the upper surface 150a of the heating member 150. The chemical solution can be discharged from.
　なお、図１～図１４を参照した上述の説明では、加熱部材１５０は、薬液によって清浄にしたが、本実施形態は、これに限定されない。加熱部材１５０は、薬液に加えて摩耗によって清浄にされてもよい。加熱部材１５０を摩耗する場合、加熱部材１５０は、回転した状態で摩耗されることが好ましい。 In the above description with reference to FIGS. 1 to 14, the heating member 150 was cleaned with a chemical solution, but the present embodiment is not limited to this. The heating member 150 may be cleaned by abrasion in addition to the chemical solution. When the heating member 150 is worn, it is preferable that the heating member 150 is worn in a rotated state.
　次に、図１５を参照して、本実施形態の基板処理装置１００を説明する。図１５に示した基板処理装置１００は、スクラブ部材１９２をさらに備える点を除いて、図１４を参照して上述した基板処理装置１００と同様の構成を有しており、冗長を避けるために重複する記載を省略する。 Next, the substrate processing apparatus 100 of the present embodiment will be described with reference to FIG. The substrate processing apparatus 100 shown in FIG. 15 has the same configuration as the substrate processing apparatus 100 described above with reference to FIG. 14, except that the scrub member 192 is further provided, and is duplicated in order to avoid redundancy. The description to be made is omitted.
　基板処理装置１００は、スクラブ部材１９２をさらに備える。スクラブ部材１９２は、清浄工程において薬液を用いて加熱部材１５０の上面１５０ａをスクラブする。スクラブ部材１９２のヘッドは、スポンジ、不織布、発泡ポリウレタンなどの軟質材料または研磨テープから構成される。スクラブ部材１９２が加熱部材１５０の上面１５０ａと接触することにより、スクラブ部材１９２は、薬液を用いて加熱部材１５０の上面１５０ａの付着物を除去できる。 The substrate processing device 100 further includes a scrub member 192. The scrub member 192 scrubs the upper surface 150a of the heating member 150 with a chemical solution in the cleaning step. The head of the scrub member 192 is made of a soft material such as sponge, non-woven fabric, polyurethane foam or polishing tape. When the scrub member 192 comes into contact with the upper surface 150a of the heating member 150, the scrub member 192 can remove the deposits on the upper surface 150a of the heating member 150 using a chemical solution.
　スクラブ部材１９２は、加熱部材１５０に対して相対的に移動することが好ましい。例えば、スクラブ部材１９２は、Ｘ方向および／またはＹ方向に沿って加熱部材１５０の上面１５０ａに対して移動してもよい。あるいは、スクラブ部材１９２は加熱部材１５０の上面１５０ａに接触した状態で維持される一方で、加熱部材１５０が回転してもよい。また、スクラブ部材１９２は、加熱部材１５０の清浄工程に用いられるだけでなく、基板Ｗの処理工程に用いられてもよい。 It is preferable that the scrub member 192 moves relative to the heating member 150. For example, the scrub member 192 may move with respect to the upper surface 150a of the heating member 150 along the X and / or Y directions. Alternatively, the scrub member 192 may be kept in contact with the upper surface 150a of the heating member 150, while the heating member 150 may rotate. Further, the scrub member 192 may be used not only in the cleaning step of the heating member 150 but also in the processing step of the substrate W.
　以上、図面を参照して本発明の実施形態を説明した。ただし、本発明は、上記の実施形態に限られるものではなく、その要旨を逸脱しない範囲で種々の態様において実施することが可能である。また、上記の実施形態に開示される複数の構成要素を適宜組み合わせることによって、種々の発明の形成が可能である。例えば、実施形態に示される全構成要素から幾つかの構成要素を削除してもよい。さらに、異なる実施形態にわたる構成要素を適宜組み合わせてもよい。図面は、理解しやすくするために、それぞれの構成要素を主体に模式的に示しており、図示された各構成要素の厚み、長さ、個数、間隔等は、図面作成の都合上から実際とは異なる場合もある。また、上記の実施形態で示す各構成要素の材質、形状、寸法等は一例であって、特に限定されるものではなく、本発明の効果から実質的に逸脱しない範囲で種々の変更が可能である。 The embodiment of the present invention has been described above with reference to the drawings. However, the present invention is not limited to the above-described embodiment, and can be implemented in various aspects without departing from the gist thereof. In addition, various inventions can be formed by appropriately combining the plurality of components disclosed in the above embodiments. For example, some components may be removed from all the components shown in the embodiments. In addition, components across different embodiments may be combined as appropriate. In order to make the drawings easier to understand, each component is schematically shown, and the thickness, length, number, spacing, etc. of each component shown are actual for the convenience of drawing creation. May be different. Further, the material, shape, dimensions, etc. of each component shown in the above embodiment are merely examples, and are not particularly limited, and various changes can be made without substantially deviating from the effects of the present invention. is there.
　本発明は、基板を加熱するための加熱部材を清浄にするために好適に用いられる。 The present invention is suitably used for cleaning a heating member for heating a substrate.
　１００　　基板処理装置
　１１０　　チャンバー
　１２０　　基板保持部
　１３２　　薬液供給部
　１３４　　リンス液供給部
　１３６　　有機溶剤供給部
　１４０　　ガス供給部
　　　Ｗ　　基板 100 Substrate processing device 110 Chamber 120 Substrate holding unit 132 Chemical solution supply unit 134 Rinse solution supply unit 136 Organic solvent supply unit 140 Gas supply unit W Substrate

Claims (13)

  1. 　基板処理装置の加熱部材の清浄方法であって、
    　前記加熱部材の上面にリンス液を供給する工程と、
    　前記加熱部材の前記上面において前記リンス液と混ざるように、前記加熱部材の前記上面の外周部に薬液を選択的に供給する工程と、
    　前記加熱部材の前記上面から前記薬液を排出する工程と
    を包含する、加熱部材の清浄方法。     It is a method of cleaning the heating members of the substrate processing equipment.
    The step of supplying the rinse liquid to the upper surface of the heating member and
    A step of selectively supplying a chemical solution to the outer peripheral portion of the upper surface of the heating member so as to be mixed with the rinse solution on the upper surface of the heating member.
    A method for cleaning a heating member, which comprises a step of discharging the chemical solution from the upper surface of the heating member.
  2. 　前記リンス液を供給した後、前記薬液を選択的に供給する前に、前記加熱部材の前記上面にガスを供給する工程をさらに包含する、請求項１に記載の加熱部材の清浄方法。 The method for cleaning a heating member according to claim 1, further comprising a step of supplying gas to the upper surface of the heating member after the rinse solution is supplied and before the chemical solution is selectively supplied.
  3. 　前記ガスを供給する工程において、前記加熱部材の前記上面の中央に前記ガスを供給する、請求項２に記載の加熱部材の清浄方法。 The method for cleaning a heating member according to claim 2, wherein in the step of supplying the gas, the gas is supplied to the center of the upper surface of the heating member.
  4. 　前記ガスを供給する工程は、前記加熱部材の前記上面の前記外周部において前記リンス液をリング状に形成する工程を含む、請求項２または３に記載の加熱部材の清浄方法。 The method for cleaning a heating member according to claim 2 or 3, wherein the step of supplying the gas includes a step of forming the rinse liquid in a ring shape on the outer peripheral portion of the upper surface of the heating member.
  5. 　前記薬液を選択的に供給する工程は、前記加熱部材の前記上面の外周部において前記薬液をリング状に形成する工程を含む、請求項１から４のいずれかに記載の加熱部材の清浄方法。 The method for cleaning a heating member according to any one of claims 1 to 4, wherein the step of selectively supplying the chemical solution includes a step of forming the chemical solution in a ring shape on the outer peripheral portion of the upper surface of the heating member.
  6. 　前記薬液を排出する工程は、前記薬液を前記加熱部材の前記上面の端部に移動させて前記加熱部材の前記上面の端部から前記薬液を排出する工程を含む、請求項１から５のいずれかに記載の加熱部材の清浄方法。 Any of claims 1 to 5, wherein the step of discharging the chemical solution includes a step of moving the chemical solution to the end of the upper surface of the heating member and discharging the chemical solution from the end of the upper surface of the heating member. The method for cleaning the heating member described in Crab.
  7. 　前記薬液を排出する工程は、前記加熱部材の前記上面の中央にガスを供給する工程を含む、請求項１から６のいずれかに記載の加熱部材の清浄方法。 The method for cleaning a heating member according to any one of claims 1 to 6, wherein the step of discharging the chemical solution includes a step of supplying gas to the center of the upper surface of the heating member.
  8. 　前記薬液を排出する工程は、前記加熱部材を回転する工程を含む、請求項１から６のいずれかに記載の加熱部材の清浄方法。 The method for cleaning a heating member according to any one of claims 1 to 6, wherein the step of discharging the chemical solution includes a step of rotating the heating member.
  9. 　基板を保持するための基板保持部と、
    　前記基板保持部に保持された前記基板の裏面に対向する加熱部材と、
    　リンス液供給部と、
    　薬液供給部と、
    　前記加熱部材、前記薬液供給部および前記リンス液供給部を制御する制御部と
    を備え、
    　前記制御部は、前記加熱部材の上面にリンス液を供給した後、前記加熱部材の前記上面の外周部に薬液を選択的に供給して前記加熱部材の前記上面において前記薬液が前記リンス液と混ざるように前記リンス液供給部および前記薬液供給部を制御する、基板処理装置。     A board holding part for holding the board and
    A heating member held by the substrate holding portion and facing the back surface of the substrate,
    Rinse liquid supply unit and
    Chemical supply unit and
    It includes the heating member, the chemical solution supply unit, and a control unit that controls the rinse solution supply unit.
    After supplying the rinse solution to the upper surface of the heating member, the control unit selectively supplies the chemical solution to the outer peripheral portion of the upper surface of the heating member, and the chemical solution is combined with the rinse solution on the upper surface of the heating member. A substrate processing apparatus that controls the rinse liquid supply unit and the chemical liquid supply unit so as to be mixed.
  10. 　ガス供給部をさらに備え、
    　前記制御部は、前記加熱部材の前記上面の前記外周部に前記薬液を選択的に供給する前であって、前記加熱部材の前記上面に前記リンス液を供給した後に、前記加熱部材の前記上面にガスを供給するように前記ガス供給部を制御する、請求項９に記載の基板処理装置。     With more gas supply
    The control unit supplies the rinse solution to the upper surface of the heating member before selectively supplying the chemical solution to the outer peripheral portion of the upper surface of the heating member, and then the upper surface of the heating member. The substrate processing apparatus according to claim 9, wherein the gas supply unit is controlled so as to supply gas to the air conditioner.
  11. 　前記制御部は、前記加熱部材の前記上面に前記ガスを供給することによって前記リンス液をリング状に形成するように前記ガス供給部を制御する、請求項１０に記載の基板処理装置。 The substrate processing apparatus according to claim 10, wherein the control unit controls the gas supply unit so as to form the rinse liquid in a ring shape by supplying the gas to the upper surface of the heating member.
  12. 　前記制御部は、前記加熱部材の前記上面の前記外周部に前記薬液を選択的に供給した後に、前記加熱部材の中央に前記ガスを供給するように前記ガス供給部を制御する、請求項１０または１１に記載の基板処理装置。 10. The control unit controls the gas supply unit so as to selectively supply the chemical solution to the outer peripheral portion of the upper surface of the heating member and then supply the gas to the center of the heating member. Alternatively, the substrate processing apparatus according to 11.
  13. 　前記加熱部材は、回転可能に構成されており、
    　前記制御部は、前記加熱部材の前記上面の前記外周部に前記薬液を選択的に供給した後に、前記加熱部材を回転するように前記加熱部材を制御する、請求項９から１２のいずれかに記載の基板処理装置。     The heating member is configured to be rotatable and can be rotated.
    The control unit controls the heating member so as to rotate the heating member after selectively supplying the chemical solution to the outer peripheral portion of the upper surface of the heating member, according to any one of claims 9 to 12. The substrate processing apparatus described.
PCT/JP2020/025290 2019-08-21 2020-06-26 Cleaning method of heating member and substrate processing apparatus WO2021033427A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10199852A (en) * 1997-01-13 1998-07-31 Dainippon Screen Mfg Co Ltd Rotary substrate treatment device
JP2004259734A (en) * 2003-02-24 2004-09-16 Dainippon Screen Mfg Co Ltd Device and method for treating substrate
WO2013140955A1 (en) * 2012-03-23 2013-09-26 大日本スクリーン製造株式会社 Substrate processing apparatus and heater cleaning method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10199852A (en) * 1997-01-13 1998-07-31 Dainippon Screen Mfg Co Ltd Rotary substrate treatment device
JP2004259734A (en) * 2003-02-24 2004-09-16 Dainippon Screen Mfg Co Ltd Device and method for treating substrate
WO2013140955A1 (en) * 2012-03-23 2013-09-26 大日本スクリーン製造株式会社 Substrate processing apparatus and heater cleaning method

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