WO2021032217A3 - Laser se battery production line - Google Patents

Laser se battery production line Download PDF

Info

Publication number
WO2021032217A3
WO2021032217A3 PCT/CN2020/121202 CN2020121202W WO2021032217A3 WO 2021032217 A3 WO2021032217 A3 WO 2021032217A3 CN 2020121202 W CN2020121202 W CN 2020121202W WO 2021032217 A3 WO2021032217 A3 WO 2021032217A3
Authority
WO
WIPO (PCT)
Prior art keywords
laser
chain
silicon wafer
oxidation furnace
conveyance
Prior art date
Application number
PCT/CN2020/121202
Other languages
French (fr)
Chinese (zh)
Other versions
WO2021032217A2 (en
Inventor
符黎明
任常瑞
王敏
陈颖
Original Assignee
常州时创能源股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 常州时创能源股份有限公司 filed Critical 常州时创能源股份有限公司
Publication of WO2021032217A2 publication Critical patent/WO2021032217A2/en
Publication of WO2021032217A3 publication Critical patent/WO2021032217A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A laser SE battery production line, comprising, sequentially arranged: a laser doper (10), a chain oxidation furnace (20), and a chain etcher (30). Conveyance mechanisms for said three devices are sequentially connected. A silicon wafer can be conveyed in relay by the conveyance mechanisms of the three devices. The silicon wafer output by the laser doper (10) after laser doping treatment can be directly input to the chain oxidation furnace (20), and the silicon wafer output by the chain oxidation furnace (20) after thermal oxidation treatment can be directly input to the chain etcher (30). A silicon wafer in the chain oxidation furnace (20) can be oxidized during a conveyance process of a second conveyance mechanism (26), and thus the chain oxidation furnace can produce continuously, which can greatly increase production capacity. In addition, a quartz boat is not required to be used to bear the silicon wafer, thus being able to eliminate the motion of wafer insertion and picking in a quartz boat, which can greatly reduce the incidence of breakage of silicon wafers.
PCT/CN2020/121202 2019-08-21 2020-10-15 Laser se battery production line WO2021032217A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910772103.2 2019-08-21
CN201910772103.2A CN110416368A (en) 2019-08-21 2019-08-21 A kind of production line of laser SE battery

Publications (2)

Publication Number Publication Date
WO2021032217A2 WO2021032217A2 (en) 2021-02-25
WO2021032217A3 true WO2021032217A3 (en) 2021-04-08

Family

ID=68368192

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/121202 WO2021032217A2 (en) 2019-08-21 2020-10-15 Laser se battery production line

Country Status (2)

Country Link
CN (1) CN110416368A (en)
WO (1) WO2021032217A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110416368A (en) * 2019-08-21 2019-11-05 常州时创能源科技有限公司 A kind of production line of laser SE battery
CN112466991A (en) * 2020-11-16 2021-03-09 江苏润阳悦达光伏科技有限公司 Alkaline polishing preparation process of SE battery
CN112735998B (en) * 2020-12-24 2023-03-24 大族激光科技产业集团股份有限公司 Laser doping apparatus
CN112909133A (en) * 2021-03-26 2021-06-04 常州时创能源股份有限公司 Silicon wafer texturing production line
CN113488562B (en) * 2021-07-23 2022-12-06 常州时创能源股份有限公司 Crystallization annealing treatment method for in-situ doped amorphous silicon
CN114156365A (en) * 2021-11-23 2022-03-08 江苏华恒新能源有限公司 Thermal oxidation treatment device for crystalline silicon SE battery piece

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594530A (en) * 2013-11-27 2014-02-19 奥特斯维能源（太仓）有限公司 Crystalline silicon solar cell combining obverse side thermal oxidation, selective emitter junctions and reverse passivation and manufacturing method thereof
CN107086255A (en) * 2017-06-09 2017-08-22 常州比太科技有限公司 Solar cell filming equipment and solar cell chain type production equipment
CN107946408A (en) * 2017-12-12 2018-04-20 浙江晶科能源有限公司 A kind of preparation method of IBC solar cells
CN110416368A (en) * 2019-08-21 2019-11-05 常州时创能源科技有限公司 A kind of production line of laser SE battery

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3377221B2 (en) * 1991-08-20 2003-02-17 忠弘 大見 Heat treatment equipment
US6287988B1 (en) * 1997-03-18 2001-09-11 Kabushiki Kaisha Toshiba Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
JP2008085056A (en) * 2006-09-27 2008-04-10 Kyocera Corp Crystal grain manufacturing method
CN101950781A (en) * 2010-09-09 2011-01-19 浙江百力达太阳能有限公司 Silicon chip carrier and making process for selective emitter solar cell
CN102185033A (en) * 2011-04-19 2011-09-14 润峰电力有限公司 Manufacturing process of high-efficiency crystalline silicon solar battery with selective emitting electrode
CN102881767B (en) * 2012-09-17 2016-08-03 天威新能源控股有限公司 A kind of chain type diffusion technique for solaode
CN103618028B (en) * 2013-11-15 2016-06-15 中电电气（南京）光伏有限公司 A kind of method and equipment preparing PN knot and the crystal silicon solar energy battery with surface passivation
CN104701425A (en) * 2015-04-08 2015-06-10 常州时创能源科技有限公司 Diffusion post treatment technique of crystalline silicon solar cell
CN104916740B (en) * 2015-05-27 2017-08-11 上海大族新能源科技有限公司 Anneal oxidation equipment
CN105200525A (en) * 2015-08-20 2015-12-30 黄冬焱 Battery diffusion aftertreatment process
CN107344447A (en) * 2017-08-23 2017-11-14 昆山赢天下自动化科技有限公司 Solar cell silk screen printing machine and manufacture of solar cells line
CN108044819B (en) * 2017-12-07 2020-04-03 苏州阿特斯阳光电力科技有限公司 Silicon rod cutting method
CN109638109B (en) * 2018-12-11 2020-07-10 湖南红太阳光电科技有限公司 Preparation method of selective emitter and preparation method of selective emitter battery
CN109888061B (en) * 2019-03-22 2023-09-26 通威太阳能（安徽）有限公司 Alkali polishing efficient PERC battery and preparation process thereof
CN110010721B (en) * 2019-03-22 2020-11-06 通威太阳能（合肥）有限公司 SE-based alkali polishing high-efficiency PERC battery process
CN210110824U (en) * 2019-08-21 2020-02-21 常州时创能源科技有限公司 Production line of laser SE battery

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103594530A (en) * 2013-11-27 2014-02-19 奥特斯维能源（太仓）有限公司 Crystalline silicon solar cell combining obverse side thermal oxidation, selective emitter junctions and reverse passivation and manufacturing method thereof
CN107086255A (en) * 2017-06-09 2017-08-22 常州比太科技有限公司 Solar cell filming equipment and solar cell chain type production equipment
CN107946408A (en) * 2017-12-12 2018-04-20 浙江晶科能源有限公司 A kind of preparation method of IBC solar cells
CN110416368A (en) * 2019-08-21 2019-11-05 常州时创能源科技有限公司 A kind of production line of laser SE battery

Also Published As

Publication number Publication date
CN110416368A (en) 2019-11-05
WO2021032217A2 (en) 2021-02-25

Similar Documents

Publication Publication Date Title
WO2021032217A3 (en) Laser se battery production line
JP2013541212A5 (en)
WO2022142474A1 (en) Efficient heterojunction solar cell and preparation method
JP2010103486A5 (en) Substrate processing apparatus setup method, semiconductor device manufacturing method implemented by substrate processing apparatus, and substrate processing apparatus
CN111009592B (en) SiO (silicon dioxide)2And preparation method of doped polycrystalline silicon laminated passivation film
CN113140483A (en) Wafer conveying method and wafer conveying platform
CN110408914A (en) Tubular type depositing system
WO2012091395A3 (en) Composition for a texture-etching solution, and texture-etching method for crystalline silicon wafers
CN102610696A (en) Diffusion process for solar cell tube furnace
WO2013105634A1 (en) Thermally oxidized heterogeneous composite substrate and method for manufacturing same
CN109346433B (en) Method for bonding semiconductor substrate and bonded semiconductor substrate
CN113488562B (en) Crystallization annealing treatment method for in-situ doped amorphous silicon
CN107331728A (en) The technique for improving PERC high-efficiency battery EL yields
CN210110824U (en) Production line of laser SE battery
CN104810263B (en) The manufacturing method of gate oxide
CN105810620B (en) Chip transmits arm, wafer transfer device and chip retaining cushion
JP6104192B2 (en) Semiconductor device manufacturing method and manufacturing apparatus
CN102453957A (en) Method for reducing germanium/silicon epitaxy surface defects
CN204361068U (en) Wafer transmits arm, wafer transfer device and chip retaining cushion
CN111029288B (en) Corner conveying method for silicon wafer
JP2012104651A (en) Method for forming thermal oxide film on silicon single-crystal wafer
CN108198909B (en) Silicon wafer processing method and solar cell manufacturing method
CN105355551B (en) A kind of wafer passivation technique
CN102842528B (en) Method for transferring workpieces to enter and exit vacuum environment and ensuring workpieces to pass through processing region in vacuum environment and equipment
CN112582498A (en) Method for continuously producing crystalline silicon solar cells

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20854584

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20854584

Country of ref document: EP

Kind code of ref document: A2