WO2021031356A1

WO2021031356A1 - Dielectric waveguide filter

Info

Publication number: WO2021031356A1
Application number: PCT/CN2019/115064
Authority: WO
Inventors: 章博; 吴建汪; 段宗金
Original assignee: 深圳国人科技股份有限公司
Priority date: 2019-08-22
Filing date: 2019-11-01
Publication date: 2021-02-25

Abstract

The present invention relates to a dielectric waveguide filter, comprising two adjacent dielectric resonators. Each dielectric resonator is provided with a resonant hole. A coupling window is formed between the two dielectric resonators. The dielectric waveguide filter further comprises a first coupling polarity inversion structure provided on the coupling window. The first coupling polarity inversion structure forms a non-conductive shielding region. In the present invention, a first coupling polarity inversion structure is provided on a coupling window, so that capacitive coupling of a dielectric waveguide filter can be realized, low-end suppression of the filter is improved, and loss of a Q value is reduced; and the filter is easy to be processed and shaped, and the processing difficulty is low.

Description

A dielectric waveguide filter

Technical field

The invention relates to a communication equipment device, in particular to a dielectric waveguide filter.

Background technique

Filter is a kind of frequency selective device, often used in the front end of radio frequency system. With the advent of the 5G era, systems are getting smaller and lighter. Miniaturization, high performance, and low power consumption filters are the key to the miniaturization of 5G equipment. Compared with traditional waveguide filters, dielectric waveguide filters have greater advantages, so they have broad application prospects in 5G communication equipment.

In order to improve the frequency selection characteristics of the dielectric waveguide filter, cross-coupling is usually used to make the phase difference by 180°, thereby forming a pole outside the passband of the frequency response. In dielectric waveguide filters, the way to achieve capacitive coupling is generally to achieve a certain depth of blind holes. This method is simple, but it sacrifices a certain Q value of the filter, and at the same time, there is a certain deterioration in the higher harmonics. This method virtually increases the difficulty of device design. Therefore, how to achieve capacitive coupling in dielectric waveguides is an urgent problem in the industry.

technical problem

The purpose of the present invention is to overcome the above technical shortcomings and provide a dielectric waveguide filter, which can realize capacitive coupling, reduce the loss of the Q value, facilitate processing, and reduce the processing difficulty.

Technical solutions

A dielectric waveguide filter provided by the present invention includes two adjacent dielectric resonators, each dielectric resonator is provided with a resonator hole, a coupling window is formed between the two dielectric resonators, and the dielectric waveguide filter It also includes a first coupling polarity inversion structure disposed on the coupling window, and the first coupling polarity inversion structure forms a non-conductive shielding area.

Further, the outer surfaces of the two dielectric resonators and the coupling window are both provided with a conductive shielding layer: the first coupling polarity inversion structure is formed on the conductive shielding layer on the upper surface of the coupling window.

Further, the length direction of the first coupling polarity reversal structure intersects or is parallel to the connection direction between the resonant holes of the two dielectric resonators.

Further, the first coupling polarity inversion structure includes a main coupling structure and a secondary coupling structure extending from an end of the main coupling structure, and the main coupling structure is between the resonant holes of the two dielectric resonators The direction of the connection lines intersect or parallel.

Further, the cross-sectional shape of the first coupling polarity reversal structure is S-shaped, L-shaped, 2-shaped, Z-shaped, E-shaped, U-shaped, or intersecting.

Further, both sides of the first coupling polarity reversal structure are respectively provided with a first through hole and a second through hole, two open ends of the first through hole and two open ends of the second through hole The conductive shielding layer on the upper surface of the coupling window and the conductive shielding layer on the lower surface of the coupling window are respectively located.

Further, a second coupling polarity inversion structure is formed on the conductive shielding layer on the lower surface of the coupling window, and the second coupling polarity inversion structure forms a non-conductive shielding area.

Further, both sides of the first coupling polarity reversal structure and the second coupling polarity reversal structure are respectively provided with a first through hole and a second through hole, and two open ends of the first through hole, The two opening ends of the second through hole are respectively located on the conductive shielding layer on the upper surface of the coupling window and the conductive shielding layer on the lower surface of the coupling window.

Further, the upper surface of the coupling window is provided with a first sinking area, two ends of the first sinking area respectively extend to the two dielectric resonators, and the first sinking area is located in the two dielectrics. Between the resonator holes of the resonator; the inner surface of the first sinking area is provided with a conductive shielding layer, and the first coupling polarity inversion structure is formed on the conductive shielding layer on the bottom surface of the first sinking area.

Further, the lower surface of the coupling window is provided with a second sinking area, two ends of the second sinking area respectively extend to the two dielectric resonators, and the second sinking area is located in the two dielectrics. Between the resonator holes of the resonator; the inner surface of the second sinking area is provided with a conductive shielding layer, a second coupling polarity inversion structure is formed on the conductive shielding layer on the bottom surface of the second sinking area, the second The coupling polarity inversion structure forms a non-conductive shielding area.

Further, the outer surfaces of the two dielectric resonators are both provided with a conductive shielding layer: the thickness of the conductive shielding layer provided on the inner surface of the first sinking area is equal to the thickness of the conductive shielding layer provided on the outer surface of the dielectric resonator .

Further, a first vacancy and a second vacancy are formed between the two side walls of the coupling window and the two dielectric resonators, respectively.

Further, the two dielectric resonators are respectively a first dielectric resonator and a third dielectric resonator, and the dielectric waveguide filter further includes a line connecting the first dielectric resonator and the third dielectric resonator. Outside the second dielectric resonator.

Further, a third vacancy and a fourth vacancy are respectively formed between the second dielectric resonator, the first dielectric resonator and the third dielectric resonator, and the second vacancy, the third vacancy and the fourth vacancy are formed between Connect with each other.

Further, the cross-sectional shape of the second coupling polarity inversion structure is the same as or different from the cross-sectional shape of the first coupling polarity inversion structure.

Further, the cross-sectional shape of the first sinking area and the second sinking area is rectangular, circular or square.

Beneficial effect

In the present invention, by setting the first coupling polarity reversal structure on the coupling window, the capacitive coupling of the dielectric waveguide filter can be realized, the low-end suppression of the filter is improved, the loss of the Q value is reduced, and the processing and shaping are easy. The processing difficulty is low, and by changing the ratio of the lateral size of the first coupling polarity inversion structure to the width of the coupling window, inductive coupling or electromagnetic hybrid coupling between two dielectric resonators can also be realized.

Description of the drawings

FIG. 1 is a schematic structural diagram of a dielectric waveguide filter provided by the first embodiment of the present invention;

2 is a schematic structural diagram of an alternative solution of the first coupling polarity inversion structure of the dielectric waveguide filter shown in FIG. 1;

3 is a schematic structural diagram of a dielectric waveguide filter according to a second embodiment of the present invention;

4 is a schematic structural diagram of an alternative solution of the first coupling polarity inversion structure of the dielectric waveguide filter shown in FIG. 3;

5 is a schematic structural diagram of a dielectric waveguide filter provided by the third embodiment of the present invention;

6 is a schematic structural diagram of an alternative solution of the first coupling polarity inversion structure of the dielectric waveguide filter shown in FIG. 5;

7 is a schematic structural diagram of a dielectric waveguide filter according to a fourth embodiment of the present invention;

8 is a schematic structural diagram of an alternative solution of the first coupling polarity inversion structure of the dielectric waveguide filter shown in FIG. 7;

9 is a schematic structural diagram of a dielectric waveguide filter according to a fifth embodiment of the present invention;

10 is a schematic structural diagram of a dielectric waveguide filter according to a sixth embodiment of the present invention;

11 is a schematic structural diagram of a dielectric waveguide filter provided by a seventh embodiment of the present invention;

12 is a schematic structural diagram of a dielectric waveguide filter provided by an eighth embodiment of the present invention;

13 is a schematic structural diagram of a dielectric waveguide filter provided by a ninth embodiment of the present invention;

14 is a schematic top view of a dielectric waveguide filter according to a tenth embodiment of the present invention;

15 is a schematic structural diagram of a dielectric waveguide filter according to an eleventh embodiment of the present invention;

16 is a schematic structural diagram of a dielectric waveguide filter according to a twelfth embodiment of the present invention;

17 is a schematic structural diagram of a dielectric waveguide filter according to a thirteenth embodiment of the present invention;

18 is a schematic structural diagram of a dielectric waveguide filter according to a fourteenth embodiment of the present invention;

19 is a schematic structural diagram of a dielectric waveguide filter provided by a fifteenth embodiment of the present invention;

20 is a schematic structural diagram of a dielectric waveguide filter according to the sixteenth embodiment of the present invention.

Embodiments of the invention

The present invention will be further described below in conjunction with the drawings and embodiments.

First embodiment

Referring to Fig. 1, a dielectric waveguide filter provided by the present invention includes two adjacent dielectric resonators. Each dielectric resonator is provided with a resonance hole. The two dielectric resonators are the first dielectric resonator 11 and the second dielectric resonator 12, respectively. A coupling window 30 is formed between the first dielectric resonator 11 and the second dielectric resonator 12. The coupling window 30 is used to realize energy transfer between the first dielectric resonator 11 and the second dielectric resonator 12.

The resonance hole of the first dielectric resonator 11 is a first resonance hole 111, and the resonance hole of the second dielectric resonator 12 is a second resonance hole 121. Both the first resonance hole 111 and the second resonance hole 121 are blind holes. The first resonance hole 111 is used for adjusting the resonance frequency of the first dielectric resonator 11, and the second resonance hole 121 is used for the resonance of the second dielectric resonator 12 To adjust the frequency, the resonant frequencies of the first dielectric resonator 11 and the second dielectric resonator 12 can be realized by adjusting the depth of the first resonant hole 111 and the second resonant hole 121.

The outer surfaces of the first dielectric resonator 11, the second dielectric resonator 12 and the coupling window 30 are all provided with a conductive shielding layer. The inner surfaces of the first resonance hole 111 and the second resonance hole 121 are both provided with a conductive shielding layer. The conductive shielding layer is, for example, a metalized layer such as a silver layer and a copper layer.

In this embodiment, the first coupling polarity inversion structure 20 is formed on the conductive shielding layer 30 a on the upper surface of the coupling window 30. The first coupling polarity inversion structure 20 forms a non-conductive shielding area, which is used to realize the capacitive coupling between the first dielectric resonator 11 and the second dielectric resonator 12, so as to generate negative coupling between the two dielectric resonators, Therefore, the capacitive coupling of the dielectric waveguide filter can be realized, and the arrangement of the first coupling polarity inversion structure 20 will not increase the volume of the dielectric waveguide filter, which can ensure the miniaturization of the dielectric waveguide filter and effectively reduce the interference. The sacrifice of Q value and easy processing and molding reduces the processing difficulty. The first coupling polarity inversion structure 20 is formed by removing a part of the conductive shielding according to the shape of the first coupling polarity inversion structure 20 by using laser, polishing, etching, etc. on the conductive shielding layer 30a on the upper surface of the coupling window 30 Since the first coupling polarity inversion structure 20 is formed by removing a part of the conductive shielding layer, the first coupling polarity inversion structure 20 forms a non-conductive shielding area. It should be understood that the depth of the first coupling polarity inversion structure 20 is equal to the thickness of the conductive shielding layer 30 a on the upper surface of the coupling window 30. This method of forming the first coupling polarity inversion structure 20 simplifies the manufacturing process of the first coupling polarity inversion structure 20, improves the yield, and reduces the product cost.

The present invention defines the direction parallel to the width (W) direction of the first dielectric resonator 11 and the second dielectric resonator 12 of the first coupling polarity reversal structure 20 as the length direction of the first coupling polarity reversal structure 20 , The direction parallel to the length (L) direction of the first dielectric resonator 11 and the second dielectric resonator 12 of the first coupling polarity reversal structure 20 is defined as the width direction of the first coupling polarity reversal structure 20.

The width dimension (the width dimension is the horizontal dimension) and the length dimension (the length dimension is the longitudinal dimension) of the first coupling polarity inversion structure 20 are both smaller than the length dimension and the width dimension of the coupling window 30. Changing the ratio of the lateral size of the first coupling polarity inversion structure 20 to the width of the coupling window 30 (abbreviated as the aspect ratio) can make the coupling polarity between the first dielectric resonator 11 and the second dielectric resonator 12 occur. Reversal means changing from capacitive coupling to others such as inductive coupling and electromagnetic hybrid coupling. The aspect ratio is related to the frequency of the transmission zero point. For example, when the ratio of the lateral size of the first coupling polarity reversal structure 20 to the width of the coupling window 30 is sufficiently large, it is capacitive coupling (electrical coupling) at this time. When the ratio of the size to the width of the coupling window 30 is small enough, it is inductive coupling (magnetic coupling). When the ratio of the lateral size of the first coupling polarity inversion structure 20 to the width of the coupling window 30 is moderate, it is electromagnetic Hybrid coupling.

The shape of the first coupling polarity inversion structure 20 of this embodiment is approximately Z-shaped. The length direction of the first coupling polarity reversal structure 20 intersects the connection direction between the first resonant hole 111 and the second resonant hole 121, and is preferably orthogonal. By adjusting the length of the first coupling polarity reversal structure 20 and the distances between the first coupling polarity reversal structure 20 and the first resonant hole 111 and the second resonant hole 121, the first dielectric resonator 11 and The amount of capacitive coupling between the second dielectric resonators 12 can change the strength of capacitive coupling.

The first coupling polarity inversion structure 20 includes a main coupling structure 21 and a secondary coupling structure extending from the end of the main coupling structure 21. The connection direction between the main coupling structure 21 and the first resonant hole 111 and the second resonant hole 121 Intersect, preferably orthogonal. The secondary coupling structure includes a first secondary strip line 22 and a second secondary strip line 23. The first secondary strip line 22 and the second secondary strip line 23 respectively extend from the two ends of the main coupling structure 21, and the direction of extension Different, it can be understood that the direction in which the first sub-strip line 22 and the second sub-strip line 23 extend can also be the same. In this embodiment, the first sub-strip line 22 extends toward the first resonant hole 111, and the second sub-strip line 23 extends toward the second resonant hole 121. The shape and size of the first sub-strip line 22 and the second sub-strip line 23 are the same. Understandably, the shape and size of the first sub-strip line 22 and the second sub-strip line 23 may also be different. The shapes and sizes of the first sub-strip line 22 and the second sub-strip line 23 do not constitute a limitation to the present invention.

FIG. 2 is a schematic structural diagram of an alternative solution of the first coupling polarity inversion structure 20 of the dielectric waveguide filter shown in FIG. 1. In FIG. 2, the shape and size of the first coupling polarity inversion structure 20 are the same as those of the first coupling polarity inversion structure 20 in FIG. 1, except that the first coupling polarity inversion structure in FIG. The length direction of the structure 20 is parallel to the connection direction between the first resonance hole 111 and the second resonance hole 121. The main coupling structure 21 is parallel to the connection direction between the first resonance hole 111 and the second resonance hole 121. The first sub-strip line 22 and the second sub-strip line 23 respectively extend toward the two length sides of the coupling window 30.

In other embodiments, the length direction of the first coupling polarity inversion structure 20 and the connection direction between the first resonant hole 111 and the second resonant hole 121 may not be orthogonal or parallel, that is, the first coupling polarity The length direction of the reversal structure 20 can also be an angle with the connection direction between the first resonant hole 111 and the second resonant hole 121.

Second embodiment

Referring to FIG. 3, the difference between this embodiment and the first embodiment is that the shape of the first coupling polarity inversion structure 20 of this embodiment is an S shape. The length direction of the first coupling polarity reversal structure 20 intersects the connection direction between the first resonant hole 111 and the second resonant hole 121, and is preferably orthogonal.

4 is a schematic structural diagram of an alternative solution of the first coupling polarity inversion structure 20 of the dielectric waveguide filter shown in FIG. 3. In FIG. 4, the shape and size of the first coupling polarity inversion structure 20 are the same as the shape and size of the first coupling polarity inversion structure 20 in FIG. 3. The difference is that the first coupling polarity inversion structure in FIG. The length direction of the structure 20 is parallel to the connection direction between the first resonance hole 111 and the second resonance hole 121.

The third embodiment

Referring to FIG. 5, the difference between this embodiment and the first embodiment is that the shape of the first coupling polarity reversal structure 20 of this embodiment is L-shaped. The length direction of the first coupling polarity reversal structure 20 intersects the connection direction between the first resonant hole 111 and the second resonant hole 121, and is preferably orthogonal. The first coupling polarity inversion structure 20 includes a main coupling structure 21 and an auxiliary coupling structure 24 protruding from one end of the main coupling structure 21. The main coupling 21 intersects the connection direction of the first resonant hole 111 and the second resonant hole 121, preferably orthogonal. The secondary coupling structure 24 protrudes toward the direction close to the second resonance hole 121. The auxiliary coupling structure 24 is perpendicular to the main coupling structure 21.

6 is a schematic structural diagram of an alternative solution of the first coupling polarity inversion structure 20 of the dielectric waveguide filter shown in FIG. 5. In FIG. 6, the shape and size of the first coupling polarity reversal structure 20 are the same as those of the first coupling polarity reversal structure 20 of FIG. 5. The difference is that the first coupling polarity reversal of FIG. 6 The length direction of the structure 20 is parallel to the connection direction between the first resonance hole 111 and the second resonance hole 121. The main coupling structure 21 is parallel to the connection direction of the first resonance hole 111 and the second resonance hole 121. The auxiliary coupling structure 24 protrudes toward one of the length sides of the coupling window 30.

Fourth embodiment

Referring to FIG. 7, the difference between this embodiment and the first embodiment is that the shape of the first coupling polarity reversal structure 20 of this embodiment is a 5-shape. The length direction of the first coupling polarity reversal structure 20 intersects the connection direction between the first resonant hole 111 and the second resonant hole 121, and is preferably orthogonal.

FIG. 8 is a schematic structural diagram of an alternative solution of the first coupling polarity inversion structure 20 of the dielectric waveguide filter shown in FIG. 7. In FIG. 8, the shape and size of the first coupling polarity inversion structure 20 are the same as those of the first coupling polarity inversion structure 20 in FIG. 7, except that the first coupling polarity inversion structure in FIG. The length direction of the structure 20 is parallel to the connection direction between the first resonance hole 111 and the second resonance hole 121.

Fifth embodiment

Referring to FIG. 9, the difference between this embodiment and the first embodiment is that a first through hole 31 and a second through hole 32 are respectively provided on both sides of the first coupling polarity reversal structure 20 of this embodiment. The two open ends of the first through hole 31 and the two open ends of the second through hole 32 are respectively located on the conductive shielding layer 30 a on the upper surface of the coupling window 30 and the conductive shielding layer on the lower surface of the coupling window 30. Specifically, the first through hole 31 and the second through hole 32 are located on both sides of the main coupling structure 21, the first through hole 31 is close to the first sub-strip line 22, and the second through hole 32 is close to the second sub-strip line 23. The inner surfaces of the first through hole 31 and the second through hole 32 are both conductive shielding layers. The arrangement of the first through hole 31 and the second through hole 32 can adjust the amount of capacitive coupling between the first dielectric resonator 11 and the second dielectric resonator 12. The shape and size of the first through hole 31 and the second through hole 32 are the same. It is understandable that the shape and size of the first through hole 31 and the second through hole 32 may be the same or different. In this embodiment, the shapes of the first through hole 31 and the second through hole 32 are both circular, and it is understandable that the shapes of the first through hole 31 and the second through hole 32 may be other shapes.

Sixth embodiment

Referring to FIG. 10, the difference between this embodiment and the first embodiment is that a second coupling polarity inversion structure 40 is formed on the conductive shielding layer on the lower surface of the coupling window 30 in this embodiment. 40 forms a non-conductive shielding area. The formation method of the second coupling polarity inversion structure 40 is similar to the formation method of the first coupling polarity inversion structure 20. It is also achieved by using laser, polishing, etching, etc. on the conductive shielding layer on the lower surface of the coupling window 30 in accordance with the first The shape of the second coupling polarity inversion structure 40 is formed by removing a part of the conductive shielding layer. Since the second coupling polarity inversion structure 40 is formed by removing a part of the conductive shielding layer, the second coupling polarity inversion structure 40 is formed as a non-conductive Shielded area. It should be understood that the depth of the second coupling polarity inversion structure 40 is equal to the thickness of the conductive shielding layer on the lower surface of the coupling window 30. This method of forming the second coupling polarity inversion structure 40 also simplifies the manufacturing process of the second coupling polarity inversion structure 40, improves the yield, and reduces the product cost.

The shape, size, and direction of the second coupling polarity reversal structure 40 are the same as those of the first coupling polarity reversal structure 20, that is, the second coupling polarity is reversed. The rotation structure 40 corresponds to the first coupling polarity reversal structure 20. It is understandable that the shape, size, and direction of the second coupling polarity reversal structure 40 and the direction provided between the first resonant hole 111 and the second resonant hole 121 may be different from the first coupling polarity reversal structure 20. . The second coupling polarity inversion structure 40 is parallel to the first coupling polarity inversion structure 20. The arrangement of the second coupling polarity reversal structure 40 can enhance the amount of capacitive coupling between the first dielectric resonator 11 and the second dielectric resonator 12.

Seventh embodiment

Referring to FIG. 11, the difference between this embodiment and the sixth embodiment is that the first coupling polarity inversion structure 20 and the second coupling polarity inversion structure 40 of this embodiment are provided with first through holes 31 on both sides. And the second through hole 32, the two open ends of the first through hole 31 and the two open ends of the second through hole 32 are respectively located on the conductive shielding layer 30a on the upper surface of the coupling window 30 and the conductive shielding layer on the lower surface of the coupling window 30 .

Specifically, the first through hole 31 and the second through hole 32 are respectively located on both sides of the main coupling structure 21 of the first coupling polarity inversion structure 20 and the main coupling structure 41 of the second coupling polarity inversion structure 40, and The first through hole 31 is close to the first sub-strip line 22 of the first coupling polarity inversion structure 20, the first sub-strip line 42 of the second coupling polarity inversion structure 40, and the second through hole 32 is close to the first coupling pole The second sub-strip line 23 of the sex inversion structure 20 and the second sub-strip line 43 of the second coupling polarity inversion structure 40. The inner surfaces of the first through hole 31 and the second through hole 32 are both conductive shielding layers. The arrangement of the first through hole 31 and the second through hole 32 can further adjust the amount of capacitive coupling between the first dielectric resonator 11 and the second dielectric resonator 12. The shape and size of the first through hole 31 and the second through hole 32 are the same. Understandably, the shape and size of the first through hole 31 and the second through hole 32 may also be different. In this embodiment, the shapes of the first through hole 31 and the second through hole 32 are both circular, and it is understandable that the shapes of the first through hole 31 and the second through hole 32 may be other shapes.

In other embodiments, the shape of the first coupling polarity reversal structure 20 and the second coupling polarity reversal structure 40 may also be other shapes, such as 2-shaped, T-shaped, 8-shaped, E-shaped, U-shaped, and cross-shaped. Tooth shape and so on. The shapes of the first coupling polarity inversion structure 20 and the second coupling polarity inversion structure 40 can be set according to actual conditions.

Eighth embodiment

Referring to FIG. 12, the difference between this embodiment and the first embodiment is that the two dielectric resonators in this embodiment are the first dielectric resonator 11 and the third dielectric resonator 13 respectively. The resonance holes of the first dielectric resonator 11 and the third dielectric resonator 13 are the first resonance hole 111 and the third resonance hole 131 respectively. A coupling window 30 is formed between the first dielectric resonator 11 and the third dielectric resonator 13. The dielectric waveguide filter also includes a second dielectric resonator 12 and a window coupling structure 50 located outside the connection line between the first dielectric resonator 11 and the third dielectric resonator 13.

The window coupling structure 50 is located in the area enclosed by the first dielectric resonator 11, the second dielectric resonator 12, and the third dielectric resonator 13 so that the first dielectric resonator 11, the second dielectric resonator 12, and the third dielectric resonator The resonator 13 forms a main coupling. The window coupling structure 50 is preferably a rectangular through hole with semicircles at both ends.

The dielectric waveguide filter of this embodiment can form a transmission zero point at the low end of the passband by providing the first coupling polarity inversion structure 20, thereby effectively improving low-end suppression.

Ninth embodiment

Referring to FIG. 13, the difference between this embodiment and the first embodiment is that the two dielectric resonators in this embodiment are the first dielectric resonator 11 and the fourth dielectric resonator 14 respectively. The resonance holes of the first dielectric resonator 11 and the fourth dielectric resonator 14 are the first resonance hole 111 and the fourth resonance hole 141, respectively. A coupling window 30 is formed between the first dielectric resonator 11 and the fourth dielectric resonator 14. The dielectric waveguide filter further includes a second dielectric resonator 12, a third dielectric resonator 13 and a window coupling structure 50.

The second dielectric resonator 12 and the third dielectric resonator 13 are located outside the connection line between the first dielectric resonator 11 and the fourth dielectric resonator 14.

The window coupling structure 50 is located in the area enclosed by the first dielectric resonator 11, the second dielectric resonator 12, the third dielectric resonator 13, and the fourth dielectric resonator 14 so that the first dielectric resonator 11 and the second dielectric resonator The resonator 12, the third dielectric resonator 13, and the fourth dielectric resonator 14 form a main coupling. The window coupling structure 50 is preferably a T-shaped through hole.

The dielectric waveguide filter of this embodiment can form a transmission zero at the low end of the passband and the high end of the passband through the first coupling polarity inversion structure 20, thereby effectively improving the low-end suppression and the high-end suppression.

In other embodiments, the dielectric waveguide filter may also include another number of dielectric resonators, for example, five, six, or more dielectric resonators. The multiple dielectric resonators can be distributed in a single layer or in multiple layers, such as two layers, four layers, and so on.

Tenth embodiment

Referring to FIG. 14, the difference between this embodiment and the first embodiment is that the dielectric waveguide filter of this embodiment includes three dielectric resonators. The three dielectric resonators are the first dielectric resonator 11, the second dielectric resonator 12, and the third dielectric resonator 13, respectively. The first dielectric resonator 11 and the third dielectric resonator 13 are arranged side by side, and the second dielectric resonator 12 is located outside the connection line between the first dielectric resonator 11 and the third dielectric resonator 13. The resonance hole of the first dielectric resonator 11 is the first resonance hole 111, the resonance hole of the second dielectric resonator 12 is the second resonance hole 121, and the resonance hole of the third dielectric resonator 13 is the third resonance hole 131.

A coupling window 30 is formed between the first dielectric resonator 11 and the third dielectric resonator 13. A first vacancy 21 and a second vacancy 22 are formed between the two side walls of the coupling window 30 and the first dielectric resonator 11 and the third dielectric resonator 13, respectively. Understandably, a vacancy may also be formed between one of the side walls of the coupling window 30 and the first dielectric resonator 11 and the third dielectric resonator 13. A third vacancy 23, a fourth vacancy 24 are formed between the second dielectric resonator 12, the first dielectric resonator 11, and the third dielectric resonator 13, respectively. Among them, the second vacancy 22, the third vacancy 23, and the fourth vacancy 24 are formed. Connect with each other. The third vacancy 23 is located inside the coupling window (not shown in the figure) between the second dielectric resonator 12 and the first dielectric resonator 11. The fourth vacancy 24 is located inside the coupling window (not shown in the figure) between the second dielectric resonator 12 and the third dielectric resonator 13. The first vacancy 21, the second vacancy 22, the third vacancy 23 and the fourth vacancy 24 respectively form the coupling arms of the corresponding coupling window.

The upper surface of the coupling window 30 is provided with a first sinking area 33. Both ends of the first sinking area 33 respectively extend to the first dielectric resonator 11 and the third dielectric resonator 13, and the first sinking area 33 is located in the first Between the resonance hole 111 and the third resonance hole 131. The inner surface of the first sinking area 33 is provided with a conductive shielding layer (not shown in the figure), and a first coupling polarity inversion structure 20 is formed on the conductive shielding layer on the bottom surface of the first sinking area 33, and the first coupling pole The sex inversion structure 20 forms a non-conductive shielding area. In practical applications, a shield is usually pasted or added to the surface of the dielectric waveguide filter. The shield will affect the coupling performance of the coupling window 30. The arrangement of the first sinking area 33 can reduce the performance of the shield on the coupling window 30. The first coupling polarity reversal structure 20 is formed on the conductive shielding layer on the bottom surface of the first sinking area 33, which can also realize the capacitive coupling of the dielectric waveguide filter, and the first coupling polarity reversal structure 20 The arrangement does not increase the volume of the dielectric waveguide filter, can ensure the miniaturization of the dielectric waveguide filter and effectively reduce the sacrifice of the Q value, and is easy to process and shape, and reduces the processing difficulty.

The outer surface of the dielectric resonator is provided with a conductive shielding layer. Preferably, the thickness of the conductive shielding layer provided on the inner surface of the first sinking region 33 is equal to the thickness of the conductive shielding layer provided on the outer surface of the dielectric resonator.

In this embodiment, the cross-sectional shape of the first sinking area 33 is a square. Understandably, the cross-sectional shape of the first sinking area 33 may also be other, such as a rectangle, a circle, etc. The cross-sectional shape, area, and depth do not constitute limitations to the present invention. The cross-sectional shape of the first coupling polarity inversion structure 20 is a cross-tooth shape. By changing the width dimension of the first coupling polarity reversal structure 20 (the width dimension is the lateral dimension, and the lateral dimension is the direction parallel to the length (L) direction of the first dielectric resonator 11 and the third dielectric resonator 13) and the coupling window The ratio of the width of 30 can change the coupling polarity between the first dielectric resonator 11 and the second dielectric resonator 13, that is, change from capacitive coupling to others such as inductive coupling and electromagnetic hybrid coupling. For example, when the ratio of the lateral size of the first coupling polarity reversal structure 20 to the width of the coupling window 30 is sufficiently large, it is capacitive coupling (electrical coupling) at this time. When the ratio of the size to the width of the coupling window 30 is small enough, it is inductive coupling (magnetic coupling). When the ratio of the lateral size of the first coupling polarity inversion structure 20 to the width of the coupling window 30 is moderate, it is electromagnetic Hybrid coupling.

The conductive shielding layer on the bottom surface of the first sinking area 33 forms the first coupling polarity inversion structure 20 through processes such as laser, polishing, etching, etc., that is, the first coupling polarity inversion structure 20 is formed in the first sinking area 33. The conductive shielding layer on the bottom surface of 33 is formed by removing a part of the conductive shielding layer according to the shape of the first coupling polarity reversal structure 20 by laser, polishing, etching, and other processes such as photolithography. Since the first coupling polarity reversal structure 20 is A part of the conductive shielding layer is removed, and thus the first coupling polarity inversion structure 20 forms a non-conductive shielding area. It should be understood that the depth of the first coupling polarity inversion structure 20 is equal to the thickness of the conductive shielding layer on the bottom surface of the first sinking region 33. This method of forming the first coupling polarity inversion structure 20 simplifies the manufacturing process of the first coupling polarity inversion structure 20, improves the yield, and reduces the product cost.

Eleventh embodiment

15, the difference between this embodiment and the tenth embodiment is that the lower surface of the coupling window 30 is provided with a second sinking area 34, and both ends of the second sinking area 34 extend to the first dielectric resonator 11 and The third dielectric resonator 13 and the second sinking area 35 are located between the first resonance hole 111 and the third resonance hole 131. A conductive shielding layer (not shown in the figure) is provided on the inner surface of the second sinking area 34, a second coupling polarity inversion structure 40 is formed on the conductive shielding layer on the bottom surface of the second sinking area 34, and a second coupling pole The sex inversion structure 40 forms a non-conductive shielding area. The function of the second sinking area 34 is the same as that of the first sinking area 33, and the function of the second coupling polarity inversion structure 40 is the same as that of the first coupling polarity inversion structure 20. By providing two coupling polarity reversal structures, the capacitive coupling of the dielectric waveguide filter can be strengthened, and the loss of the Q value is further reduced, and the processing is easy and the processing difficulty is low. By changing the width dimension of the second coupling polarity reversal structure 40 (the width dimension is the lateral dimension, and the lateral dimension is the direction parallel to the length of the first dielectric resonator 11 and the third dielectric resonator 13) and the width of the coupling window 30 (That is, the ratio of the distance between the two side walls of the coupling window 30) can also change the coupling polarity between the first dielectric resonator 11 and the second dielectric resonator 13, that is, change from capacitive coupling to others such as inductive Coupling, electromagnetic hybrid coupling, etc. For example, when the ratio of the lateral size of the second coupling polarity inversion structure 40 to the width of the coupling window 30 is sufficiently large, it is capacitive coupling (electrical coupling) at this time. When the ratio of the size to the width of the coupling window 30 is small enough, it is inductive coupling (magnetic coupling). When the ratio of the lateral size of the second coupling polarity inversion structure 40 to the width of the coupling window 30 is moderate, it is electromagnetic Hybrid coupling. Understandably, the conversion of the ratio of the lateral size of the first coupling polarity inversion structure 20 to the width of the coupling window 30 and the conversion of the ratio of the lateral size of the second coupling polarity inversion structure 40 to the width of the coupling window 30 are Consistent to achieve capacitive coupling, inductive coupling or electromagnetic hybrid coupling at the same time.

The thickness of the conductive shielding layer provided on the inner surface of the second sinking region 34 is equal to the thickness of the conductive shielding layer provided on the outer surface of the dielectric resonator.

The second sinking area 34 corresponds to the first sinking area 33, that is, the cross-sectional shape, size, and position of the second sinking area 34 are the same as those of the first sinking area 33, which can be understood to be different. The second coupling polarity inversion structure 40 corresponds to the first coupling polarity inversion structure 20, that is, the cross-sectional shape, size, and position of the second coupling polarity inversion structure 40 are the same as those of the first coupling polarity inversion structure 20 , Understandably, can also be different.

The manner in which the conductive shielding layer on the bottom surface of the second sinking region 34 forms the second coupling polarity inversion structure 40 is similar to the first coupling polarity inversion structure 20, and will not be repeated here.

Twelfth embodiment

Referring to FIG. 16, the difference between this embodiment and the tenth embodiment is that the cross-sectional shape of the first coupling polarity reversal structure 20 of this embodiment is 2-shaped.

Thirteenth embodiment

Referring to FIG. 17, the difference between this embodiment and the eleventh embodiment is that the cross-sectional shapes of the first coupling polarity inversion structure 20 and the second coupling polarity inversion structure 40 of this embodiment are both S-shaped.

Fourteenth embodiment

Referring to FIG. 18, the difference between this embodiment and the tenth embodiment is that the cross-sectional shape of the first coupling polarity inversion structure 20 of this embodiment is U-shaped, and the U-shaped opening faces the first dielectric resonator 11.

Fifteenth embodiment

19, the difference between this embodiment and the eleventh embodiment is that the cross-sectional shapes of the first coupling polarity reversal structure 20 and the second coupling polarity reversal structure 40 of this embodiment are both U-shaped and U-shaped. The opening faces the first dielectric resonator 11.

Sixteenth embodiment

Referring to FIG. 20, the difference between this embodiment and the eleventh embodiment is that the cross-sectional shapes of the first coupling polarity inversion structure 20 and the second coupling polarity inversion structure 40 of this embodiment are both L-shaped, and the first The length directions of the coupling polarity reversal structure 20 and the second coupling polarity reversal structure 40 are respectively orthogonal to the connection line between the first resonant hole 111 and the third resonant hole 131.

In other embodiments, the shape of the first coupling polarity reversal structure 20 and the second coupling polarity reversal structure 40 may also be other shapes, such as a Z-shape, an E-shape, an 8-shape, and so on. The shapes of the first coupling polarity inversion structure 20 and the second coupling polarity inversion structure 40 can be set according to actual conditions.

In other embodiments, the dielectric waveguide filter may also include other numbers of dielectric resonators, for example, four, five, six or more dielectric resonators. The dielectric resonators can be set according to actual conditions. quantity. The multiple dielectric resonators can be distributed in a single layer or in multiple layers, such as two layers, four layers, and so on.

The above examples only express the preferred embodiments of the present invention, and their descriptions are more specific and detailed, but they should not be understood as limiting the scope of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the concept of the present invention, several modifications and improvements can be made, such as combining different features in the various embodiments, etc., which all belong to The scope of protection of the present invention.

Claims

A dielectric waveguide filter includes two adjacent dielectric resonators, each dielectric resonator is provided with a resonance hole, and is characterized in that a coupling window is formed between the two dielectric resonators, and the dielectric waveguide filter It also includes a first coupling polarity inversion structure disposed on the coupling window, and the first coupling polarity inversion structure forms a non-conductive shielding area.
The dielectric waveguide filter according to claim 1, wherein the outer surfaces of the two dielectric resonators and the coupling window are both provided with a conductive shielding layer: a conductive shielding layer is formed on the upper surface of the coupling window. The first coupling polarity reversal structure.
3. The dielectric waveguide filter according to claim 2, wherein the length direction of the first coupling polarity inversion structure intersects or is parallel to the connection direction between the resonant holes of the two dielectric resonators.
3. The dielectric waveguide filter according to claim 2, wherein the first coupling polarity inversion structure includes a main coupling structure and a sub coupling structure extending from an end of the main coupling structure, and the main coupling structure Intersect or parallel to the connection direction between the resonant holes of the two dielectric resonators.
The dielectric waveguide filter according to claim 1, wherein the cross-sectional shape of the first coupling polarity inversion structure is S-shaped, L-shaped, 2-shaped, Z-shaped, E-shaped, U-shaped, or intersecting. shape.
The dielectric waveguide filter according to claim 2, wherein the first through hole and the second through hole are respectively provided on both sides of the first coupling polarity inversion structure, and two of the first through hole Two open ends of the second through hole and two open ends are respectively located on the conductive shielding layer on the upper surface of the coupling window and the conductive shielding layer on the lower surface of the coupling window.
The dielectric waveguide filter according to claim 2, wherein a second coupling polarity inversion structure is formed on the conductive shielding layer on the lower surface of the coupling window, and the second coupling polarity inversion structure forms a non- Conductive shielding area.
7. The dielectric waveguide filter according to claim 7, wherein the first through hole and the second through hole are respectively provided on both sides of the first coupling polarity inversion structure and the second coupling polarity inversion structure The two open ends of the first through hole and the two open ends of the second through hole are respectively located on the conductive shielding layer on the upper surface of the coupling window and the conductive shielding layer on the lower surface of the coupling window.
The dielectric waveguide filter according to claim 1, wherein the upper surface of the coupling window is provided with a first sinking area, and two ends of the first sinking area respectively extend to the two dielectric resonances. The first sinking area is located between the resonator holes of the two dielectric resonators; the inner surface of the first sinking area is provided with a conductive shielding layer, and the conductive shielding layer on the bottom surface of the first sinking area is formed with The first coupling polarity inversion structure.
The dielectric waveguide filter according to claim 9, wherein the lower surface of the coupling window is provided with a second sinking area, and two ends of the second sinking area respectively extend to the two dielectric resonances. The second sinking area is located between the resonator holes of the two dielectric resonators; the inner surface of the second sinking area is provided with a conductive shielding layer, and the conductive shielding layer on the bottom surface of the second sinking area is formed with The second coupling polarity inversion structure forms a non-conductive shielding area.
The dielectric waveguide filter according to claim 9, wherein the outer surfaces of the two dielectric resonators are provided with a conductive shielding layer: the thickness of the conductive shielding layer provided on the inner surface of the first sinking area is the same as The thickness of the conductive shielding layer provided on the outer surface of the dielectric resonator is equal.
9. The dielectric waveguide filter according to claim 9, wherein a first vacancy and a second vacancy are formed between the two side walls of the coupling window and the two dielectric resonators, respectively.
The dielectric waveguide filter according to claim 12, wherein the two dielectric resonators are a first dielectric resonator and a third dielectric resonator, and the dielectric waveguide filter further includes The second dielectric resonator other than the connecting line between the dielectric resonator and the third dielectric resonator.
The dielectric waveguide filter according to claim 13, wherein a third vacancy and a fourth vacancy are formed between the second dielectric resonator, the first dielectric resonator, and the third dielectric resonator, respectively, and The second space, the third space, and the fourth space are connected to each other.
The dielectric waveguide filter according to claim 10, wherein the cross-sectional shape of the second coupling polarity inversion structure is the same as or different from the cross-sectional shape of the first coupling polarity inversion structure.
The dielectric waveguide filter according to claim 10, wherein the cross-sectional shape of the first sinking area and the second sinking area is rectangular, circular or square.