CN110518313A - A kind of dielectric waveguide filter - Google Patents
A kind of dielectric waveguide filter Download PDFInfo
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- CN110518313A CN110518313A CN201910822860.6A CN201910822860A CN110518313A CN 110518313 A CN110518313 A CN 110518313A CN 201910822860 A CN201910822860 A CN 201910822860A CN 110518313 A CN110518313 A CN 110518313A
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- polarity inversion
- sunken regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/20—Frequency-selective devices, e.g. filters
- H01P1/2002—Dielectric waveguide filters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
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Abstract
The present invention relates to a kind of dielectric waveguide filters, including two adjacent dielectric resonators, coupling window is formed between described two dielectric resonators, the upper surface of the coupling window is equipped with the first sunken regions, and the both ends of first sunken regions extend respectively to described two dielectric resonators；The inner surface of first sunken regions is equipped with conductive shielding layer, and the first coupling polarity inversion structures are formed on the conductive shielding layer of the first sunken regions bottom surface, and the first coupling polarity inversion structures form non-conductive shield region.The capacitive coupling between two adjacent dielectric resonators can be achieved in the present invention, and it can be reduced loss to Q value, change the lateral dimensions of the first coupling polarity inversion structures and the ratio for the width for coupling window, can also be achieved the inductive coupled or electromagnetism hybrid coupled between two dielectric resonators.
Description
[technical field]
The present invention relates to field of microwave communication, more particularly, to a kind of dielectric waveguide filter.
[background technique]
Filter is a kind of frequency-selecting device, is frequently used in radio frequency system front end.The 5G epoch arrive, and system is smaller and smaller, more
Come lighter.And miniaturization, high-performance, low-power consumption filter are the key that 5G device miniaturizations.Dielectric waveguide filter is compared
It has great advantages in traditional waveguide filter, therefore is with a wide range of applications in 5G communication equipment.
In order to improve the frequency selective characteristic of dielectric waveguide filter, cross-coupling is generallyd use, its phase phase difference is made
180 °, to form the pole outside frequency response passband.In dielectric waveguide filter, realize that capacitively coupled mode is generally normal
It is the blind hole of certain depth to realize.This mode is simple, but can sacrifice the certain Q value of filter, at the same time, to height
Subharmonic has certain deterioration.This method virtually increases the design difficulty of device.So how real in Medium Wave Guide
Existing capacitive coupling is the problem of urgent need to resolve in current industry.
[summary of the invention]
It is an object of the invention to overcome the shortcomings of above-mentioned technology, a kind of dielectric waveguide filter is provided, it can be achieved that capacitive
Coupling, reduces the loss to Q value, easy to process, reduces difficulty of processing.
A kind of dielectric waveguide filter provided by the invention, including two adjacent dielectric resonators, described two media
Coupling window is formed between resonator, the upper surface of the coupling window is equipped with the first sunken regions, first sunken regions
Both ends extend respectively to described two dielectric resonators；The inner surface of first sunken regions is equipped with conductive shielding layer, the
The first coupling polarity inversion structures, the first coupling polarity reversion knot are formed on the conductive shielding layer of one sunken regions bottom surface
It is configured to non-conductive shield region.
Further, the conductive shielding layer of first sunken regions bottom surface forms first coupling by etching technics
Polarity inversion structures.
Further, the lower surface of the coupling window is equipped with the second sunken regions, the both ends of second sunken regions
Described two dielectric resonators are extended respectively to, the inner surface of second sunken regions is equipped with conductive shielding layer, and second sinks
The second coupling polarity inversion structures are formed on the conductive shielding layer of region bottom surface, the second coupling polarity inversion structures are formed
Non-conductive shield region.
Further, the conductive shielding layer of second sunken regions bottom surface forms second coupling by etching technics
Polarity inversion structures.
Further, the cross sectional shape of the first coupling polarity inversion structures is S-shaped, L shape, Z-shaped, E shape, U-shaped or friendship
Tooth form.
Further, the upper surface of described two dielectric resonators is respectively equipped with tuning blind hole, first sunken regions
Between the tuning blind hole of two dielectric resonators.
Further, each dielectric resonator includes dielectric and the conductive shielding layer for being coated to medium external surface,
The thickness of the conductive shielding layer of the inner surface setting of first sunken regions and the conductive shield for being coated to medium external surface
The thickness of layer is equal.
Further, the first vacancy is respectively formed between the two sidewalls and described two dielectric resonators of the coupling window
With the second vacancy.
Further, described two dielectric resonators are respectively first medium resonator and third dielectric resonator, described
Dielectric waveguide filter further includes second Jie except the line of the first medium resonator and third dielectric resonator
Matter resonator.
Further, shape is distinguished between the second medium resonator and first medium resonator, third dielectric resonator
At having third vacancy, tetravacancy, it is interconnected between second vacancy, third vacancy and tetravacancy.
The present invention can reduce screen to the shadow of coupling window performance by the way that the first sunken regions are arranged on coupling window
It rings, by forming the first coupling polarity inversion structures on the conductive shielding layer of the first sunken regions bottom surface, it can be achieved that two phases
Capacitive coupling between adjacent dielectric resonator, the low side for improving filter inhibit, and reduce the loss to Q value, while easily
In machine-shaping, difficulty of processing is low, and changes the lateral dimensions of the first coupling polarity inversion structures and the width that couples window
Ratio, can also be achieved the inductive coupled or electromagnetism hybrid coupled between two dielectric resonators.
[Detailed description of the invention]
Fig. 1 is a kind of schematic top plan view for dielectric waveguide filter that first embodiment of the invention provides；
Fig. 2 is the stereoscopic schematic diagram of dielectric waveguide filter shown in Fig. 1；
Fig. 3 is a kind of stereoscopic schematic diagram for dielectric waveguide filter that second embodiment of the invention provides；
Fig. 4 is a kind of stereoscopic schematic diagram for dielectric waveguide filter that third embodiment of the invention provides；
Fig. 5 is a kind of stereoscopic schematic diagram for dielectric waveguide filter that fourth embodiment of the invention provides；
Fig. 6 is a kind of stereoscopic schematic diagram for dielectric waveguide filter that fifth embodiment of the invention provides；
Fig. 7 is a kind of stereoscopic schematic diagram for dielectric waveguide filter that sixth embodiment of the invention provides；
Fig. 8 is a kind of stereoscopic schematic diagram for dielectric waveguide filter that seventh embodiment of the invention provides；
Fig. 9 is a kind of stereoscopic schematic diagram for dielectric waveguide filter that eighth embodiment of the invention provides；
Figure 10 is a kind of stereoscopic schematic diagram for dielectric waveguide filter that ninth embodiment of the invention provides；
Figure 11 is a kind of stereoscopic schematic diagram for dielectric waveguide filter that tenth embodiment of the invention provides.
[specific embodiment]
The invention will be further described with reference to the accompanying drawings and examples.
With reference to Fig. 1 and Fig. 2, a kind of dielectric waveguide filter that first embodiment of the invention provides, including three media are humorous
Shake device.Three dielectric resonators are respectively first medium resonator 11, second medium resonator 12 and third dielectric resonator 13.
In being arranged side by side, second medium resonator 12 is located at first medium resonance for first medium resonator 11 and third dielectric resonator 13
Except the line of device 11 and third dielectric resonator 13.Each dielectric resonator includes dielectric such as ceramic body etc. and is coated to
The conductive shielding layer of medium external surface.Conductive shielding layer is the metal layers such as layer gold, silver layer or layers of copper.Each dielectric resonator
Upper surface is equipped with tuning blind hole, and the inner surface for tuning blind hole is equipped with conductive shielding layer.Tuning blind hole is for adjusting corresponding medium
The resonance frequency of resonator such as tunes the resonance frequency that blind hole 111 is used to adjust first medium resonator 11, tunes blind hole 121
For adjusting the resonance frequency of second medium resonator 12, tuning blind hole 131 is used to adjust the resonance of third dielectric resonator 13
Frequency can realize the adjusting of the resonance frequency of corresponding dielectric resonator by adjusting the depth for tuning blind hole.
Coupling window 30 is formed between first medium resonator 11 and third dielectric resonator 13 (see Fig. 1).Couple window
It is empty that the first vacancy 21 and second is respectively formed between 30 two sidewalls and first medium resonator 11 and third dielectric resonator 13
Position 22.It is to be appreciated that being the one of side wall and first medium resonator 11 and third medium for coupling window 30
Vacancy is formed between resonator 13.Between second medium resonator 12 and first medium resonator 11, third dielectric resonator 13
It is respectively formed with third vacancy 23, tetravacancy 24, is mutually interconnected between the second vacancy 22, third vacancy 23 and tetravacancy 24
It is logical.Pass through the second vacancy 22, third between first medium resonator 11, second medium resonator 12 and third dielectric resonator 13
Vacancy 23 and tetravacancy 24 realize the main coupling of energy.
The upper surface for coupling window 30 is equipped with the first sunken regions 40, and the both ends of the first sunken regions 40 extend respectively to the
One dielectric resonator 11 and third dielectric resonator 13.First sunken regions 40 are located at first medium resonator 11 and third medium
Between the tuning blind hole 111,131 of resonator 13.The inner surface of first sunken regions 40 is equipped with conductive shielding layer, the first sinker area
It is formed on the conductive shielding layer of 40 bottom surface of domain and holds for realizing between first medium resonator 11 and third dielectric resonator 13
Property coupling the first coupling polarity inversion structures 41, the first coupling polarity inversion structures 41 formed non-conductive shield region.In reality
Border is in application, coupling window would generally be will affect in one screen of surface mount or addition of dielectric waveguide filter, the screen
The coupling performance of mouth 30, the setting of the first sunken regions 40 can reduce influence of the screen to coupling 30 performance of window, first
The first coupling polarity inversion structures 41 are formed on the conductive shielding layer of 40 bottom surface of sunken regions, can not only realize first medium resonance
Capacitive coupling between device 11 and third dielectric resonator 13, the low side for improving filter inhibit, moreover it is possible to reduce the damage to Q value
Consumption, while the first coupling polarity inversion structures 41 are easily processed into type, reduce difficulty of processing.
Preferably, the first sunken regions 40 inner surface setting conductive shielding layer thickness and be coated to dielectric appearance
The thickness of the conductive shielding layer in face is equal.
In the present embodiment, the cross sectional shape of the first sunken regions 40 is rectangular, it is possible to understand that ground, the first sunken regions 40
Cross sectional shape can also be other, and the cross sectional shape of the first sunken regions 40, area, depth are not construed as limiting the invention.
The cross sectional shape of first coupling polarity inversion structures 41 is S-shaped.By the lateral ruler for changing the first coupling polarity inversion structures 41
It is very little that (transverse direction of the first coupling polarity inversion structures 41 is the length side with first medium resonator 11, third dielectric resonator 13
To parallel direction) and coupling window 30 width the distance between (i.e. coupling 30 two sidewalls of window) ratio, can be changed the
Coupling polarity between one dielectric resonator 11 and second medium resonator 13 is changed into other such as perceptual coupling by capacitive coupling
Conjunction, electromagnetism hybrid coupled etc..For example, when the lateral dimension and the width of coupling window 30 of the first coupling polarity inversion structures 41
It when ratio is sufficiently large, (is electrically coupled) for capacitive coupling at this time, lateral dimension and coupling when the first coupling polarity inversion structures 41
It is at this time inductive coupled (magnetic coupling), when the first coupling polarity inversion structures 41 when the ratio of the width of window 30 is sufficiently small
It is at this time electromagnetism hybrid coupled when the ratio of the width of lateral dimension and coupling window 30 is moderate.
The conductive shielding layer of first sunken regions, 40 bottom surface forms the first coupling polarity inversion structures 41 by etching technics,
That is the formation of the first coupling polarity inversion structures 41 is to use etching such as on the conductive shielding layer of 40 bottom surface of the first sunken regions
The techniques such as photoetching remove a part of conducting screen according to the S-shaped of cross sectional shape such as the present embodiment of the first coupling polarity inversion structures 41
Layer is covered to be formed, it is easy to process.
With reference to Fig. 3, in second embodiment of the invention, different from the first embodiment, the lower surface of coupling window 30 is set
There are the second sunken regions 50, the both ends of the second sunken regions 50 extend respectively to first medium resonator 11 and third dielectric resonance
Device 13.The inner surface of second sunken regions 50 is equipped with conductive shielding layer, shape on the conductive shielding layer of 50 bottom surface of the second sunken regions
It is inverted at having for realizing the second coupling polarity capacitively coupled between first medium resonator 11 and third dielectric resonator 13
Structure 51, the second coupling polarity inversion structures 51 form non-conductive shield region.Under the effect and first of second sunken regions 50
The effect in heavy region 40 is identical, the effect and the effect of the first coupling polarity inversion structures 41 of the second coupling polarity inversion structures 51
It is identical.By the way that two coupling polarity inversion structures are arranged, can reinforce first medium resonator 11 and third dielectric resonator 13 it
Between capacitive coupling, further reduce the loss to Q value, and easy to process, difficulty of processing is low.By changing the second coupling pole
Sex reversal structure 51 lateral dimension (transverse direction of the second coupling polarity inversion structures 51 i.e. and first medium resonator 11, third
The parallel direction of the length direction of dielectric resonator 13) and the width of window 30 is coupled (i.e. between the two sidewalls of coupling window 30
Distance) ratio, the coupling polarity between first medium resonator 11 and second medium resonator 13 also can be changed, i.e., by holding
Property coupling be changed into other such as inductive coupled, electromagnetism hybrid coupleds.For example, when the transverse direction of the second coupling polarity inversion structures 51
When the ratio of the width of size and coupling window 30 is sufficiently large, (it is electrically coupled) for capacitive coupling at this time, when the second coupling polarity is anti-
It is at this time inductive coupled (magnetic coupling) when the ratio of the width of the lateral dimension and coupling window 30 of rotation structure 51 is sufficiently small, when
It is at this time electromagnetism mixing when the ratio of the width of the lateral dimension and coupling window 30 of second coupling polarity inversion structures 51 is moderate
Coupling.It is to be appreciated that turn of the lateral dimension of the first coupling polarity inversion structures 41 and the ratio for the width for coupling window 30
It changes and is consistent with the lateral dimension of the second coupling polarity inversion structures 51 with the conversion of the ratio for the width for coupling window 30, with
Capacitive coupling, inductive coupled or electromagnetism hybrid coupled are realized simultaneously.
The thickness of the conductive shielding layer of second sunken regions, 50 inner surface setting and the conduction for being coated to medium external surface
The thickness of shielded layer is equal.
Second sunken regions 50 are corresponding with the first sunken regions 40, i.e. the cross sectional shape of the second sunken regions 50, size, position
It sets identical as the first sunken regions 40, it is possible to understand that ground can also be different.Second coupling polarity inversion structures 51 and the first coupling
It is corresponding to close polarity inversion structures 41, i.e., the cross sectional shape of the second coupling polarity inversion structures 51, size, position are coupled with first
Polarity inversion structures 41 are identical, it is possible to understand that ground can also be different.
The conductive shielding layer of second sunken regions, 50 bottom surface forms the second coupling polarity inversion structures 51 by etching technics,
That is the formation of the second coupling polarity inversion structures 51 is to use etching such as on the conductive shielding layer of 50 bottom surface of the second sunken regions
The techniques such as photoetching remove a part of conducting screen according to the S-shaped of cross sectional shape such as the present embodiment of the second coupling polarity inversion structures 51
Layer is covered to be formed, it is easy to process.
With reference to Fig. 4, in third embodiment of the invention, different from the first embodiment, the first coupling pole of the present embodiment
The cross sectional shape of sex reversal structure 41 is L shape.
It with reference to Fig. 5, in fourth embodiment of the invention, is different from the third embodiment, the lower surface of coupling window 30 is set
There are the second sunken regions 50, the both ends of the second sunken regions 50 extend respectively to first medium resonator 11 and third dielectric resonance
Device 13.The inner surface of second sunken regions 50 is equipped with conductive shielding layer, shape on the conductive shielding layer of 50 bottom surface of the second sunken regions
It is inverted at having for realizing the second coupling polarity capacitively coupled between first medium resonator 11 and third dielectric resonator 13
Structure 51, the second coupling polarity inversion structures 51 form non-conductive shield region.Under the effect and first of second sunken regions 50
The effect in heavy region 40 is identical, the effect and the effect of the first coupling polarity inversion structures 41 of the second coupling polarity inversion structures 51
It is identical.By the way that two coupling polarity inversion structures are arranged, can reinforce first medium resonator 11 and third dielectric resonator 13 it
Between capacitive coupling, further reduce the loss to Q value, and it is low to form difficulty, it is easy to process.By changing the second coupling pole
Sex reversal structure 51 lateral dimension (transverse direction of the second coupling polarity inversion structures 51 i.e. and first medium resonator 11, third
The parallel direction of the length direction of dielectric resonator 13) and the width of window 30 is coupled (i.e. between the two sidewalls of coupling window 30
Distance) ratio, the coupling polarity between first medium resonator 11 and second medium resonator 13 also can be changed, i.e., by holding
Property coupling be changed into other such as inductive coupled, electromagnetism hybrid coupleds.For example, when the transverse direction of the second coupling polarity inversion structures 51
When the ratio of the width of size and coupling window 30 is sufficiently large, (it is electrically coupled) for capacitive coupling at this time, when the second coupling polarity is anti-
It is at this time inductive coupled (magnetic coupling) when the ratio of the width of the lateral dimension and coupling window 30 of rotation structure 51 is sufficiently small, when
It is at this time electromagnetism mixing when the ratio of the width of the lateral dimension and coupling window 30 of second coupling polarity inversion structures 51 is moderate
Coupling.It is to be appreciated that turn of the lateral dimension of the first coupling polarity inversion structures 41 and the ratio for the width for coupling window 30
It changes and is consistent with the lateral dimension of the second coupling polarity inversion structures 51 with the conversion of the ratio for the width for coupling window 30, with
Capacitive coupling, inductive coupled or electromagnetism hybrid coupled are realized simultaneously.
The thickness of the conductive shielding layer of second sunken regions, 50 inner surface setting and the conduction for being coated to medium external surface
The thickness of shielded layer is equal.
Second sunken regions 50 are corresponding with the first sunken regions 40, i.e. the cross sectional shape of the second sunken regions 50, size, position
It sets identical as the first sunken regions 40, it is possible to understand that ground can also be different.Second coupling polarity inversion structures 51 and the first coupling
It is corresponding to close polarity inversion structures 41, i.e., the cross sectional shape of the second coupling polarity inversion structures 51, size, position are coupled with first
Polarity inversion structures 41 are identical, it is possible to understand that ground can also be different.
The conductive shielding layer of second sunken regions, 50 bottom surface forms the second coupling polarity inversion structures 51 by etching technics,
That is the formation of the second coupling polarity inversion structures 51 is to use etching such as on the conductive shielding layer of 50 bottom surface of the second sunken regions
The techniques such as photoetching remove a part of conducting screen according to the L shape of cross sectional shape such as the present embodiment of the second coupling polarity inversion structures 51
Layer is covered to be formed, it is easy to process.
With reference to Fig. 6, in fifth embodiment of the invention, different from the first embodiment, the first coupling polarity inversion structures
41 cross sectional shape is U-shaped.
With reference to Fig. 7, in sixth embodiment of the invention, unlike the 5th embodiment, the lower surface of coupling window 30 is set
There are the second sunken regions 50, the both ends of the second sunken regions 50 extend respectively to first medium resonator 11 and third dielectric resonance
Device 13.The inner surface of second sunken regions 50 is equipped with conductive shielding layer, shape on the conductive shielding layer of 50 bottom surface of the second sunken regions
It is inverted at having for realizing the second coupling polarity capacitively coupled between first medium resonator 11 and third dielectric resonator 13
Structure 51, the second coupling polarity inversion structures 51 form non-conductive shield region.Under the effect and first of second sunken regions 50
The effect in heavy region 40 is identical, the effect and the effect of the first coupling polarity inversion structures 41 of the second coupling polarity inversion structures 51
It is identical.By the way that two coupling polarity inversion structures are arranged, can reinforce first medium resonator 11 and third dielectric resonator 13 it
Between capacitive coupling, further reduce the loss to Q value, and easy to process, molding difficulty it is low.By changing the second coupling pole
Sex reversal structure 51 lateral dimension (transverse direction of the second coupling polarity inversion structures 51 i.e. and first medium resonator 11, third
The parallel direction of the length direction of dielectric resonator 13) and the width of window 30 is coupled (i.e. between the two sidewalls of coupling window 30
Distance) ratio, the coupling polarity between first medium resonator 11 and second medium resonator 13 also can be changed, i.e., by holding
Property coupling be changed into other such as inductive coupled, electromagnetism hybrid coupleds.For example, when the transverse direction of the second coupling polarity inversion structures 51
When the ratio of the width of size and coupling window 30 is sufficiently large, (it is electrically coupled) for capacitive coupling at this time, when the second coupling polarity is anti-
It is at this time inductive coupled (magnetic coupling) when the ratio of the width of the lateral dimension and coupling window 30 of rotation structure 51 is sufficiently small, when
It is at this time electromagnetism mixing when the ratio of the width of the lateral dimension and coupling window 30 of second coupling polarity inversion structures 51 is moderate
Coupling.It is to be appreciated that turn of the lateral dimension of the first coupling polarity inversion structures 41 and the ratio for the width for coupling window 30
It changes and is consistent with the lateral dimension of the second coupling polarity inversion structures 51 with the conversion of the ratio for the width for coupling window 30, with
Capacitive coupling, inductive coupled or electromagnetism hybrid coupled are realized simultaneously.
The thickness of the conductive shielding layer of second sunken regions, 50 inner surface setting and the conduction for being coated to medium external surface
The thickness of shielded layer is equal.
Second sunken regions 50 are corresponding with the first sunken regions 40, i.e. the cross sectional shape of the second sunken regions 50, size, position
It sets identical as the first sunken regions 40, it is possible to understand that ground can also be different.Second coupling polarity inversion structures 51 and the first coupling
It is corresponding to close polarity inversion structures 41, i.e., the cross sectional shape of the second coupling polarity inversion structures 51, size, position are coupled with first
Polarity inversion structures 41 are identical, it is possible to understand that ground can also be different.
The conductive shielding layer of second sunken regions, 50 bottom surface forms the second coupling polarity inversion structures 51 by etching technics,
That is the formation of the second coupling polarity inversion structures 51 is to use etching such as on the conductive shielding layer of 50 bottom surface of the second sunken regions
The techniques such as photoetching remove a part of conducting screen according to the U-shaped of cross sectional shape such as the present embodiment of the second coupling polarity inversion structures 51
Layer is covered to be formed, it is easy to process.
With reference to Fig. 8, in seventh embodiment of the invention, different from the first embodiment, the first coupling polarity inversion structures
41 cross sectional shape is 2 shapes.
With reference to Fig. 9, in eighth embodiment of the invention, unlike the 7th embodiment, the lower surface of coupling window 30 is set
There are the second sunken regions 50, the both ends of the second sunken regions 50 extend respectively to first medium resonator 11 and third dielectric resonance
Device 12.The inner surface of second sunken regions 50 is equipped with conductive shielding layer, shape on the conductive shielding layer of 50 bottom surface of the second sunken regions
It is inverted at having for realizing the second coupling polarity capacitively coupled between first medium resonator 11 and third dielectric resonator 13
Structure 51, the second coupling polarity inversion structures 51 form non-conductive shield region.Under the effect and first of second sunken regions 50
The effect in heavy region 40 is identical, the effect and the effect of the first coupling polarity inversion structures 41 of the second coupling polarity inversion structures 51
It is identical.By the way that two coupling polarity inversion structures are arranged, can reinforce first medium resonator 11 and third dielectric resonator 13 it
Between capacitive coupling, further reduce the loss to Q value, and easy to process, molding difficulty it is low.By changing the second coupling pole
Sex reversal structure 51 lateral dimension (transverse direction of the second coupling polarity inversion structures 51 i.e. and first medium resonator 11, third
The parallel direction of the length direction of dielectric resonator 13) and the width of window 30 is coupled (i.e. between the two sidewalls of coupling window 30
Distance) ratio, the coupling polarity between first medium resonator 11 and second medium resonator 13 also can be changed, i.e., by holding
Property coupling be changed into other such as inductive coupled, electromagnetism hybrid coupleds.For example, when the transverse direction of the second coupling polarity inversion structures 51
When the ratio of the width of size and coupling window 30 is sufficiently large, (it is electrically coupled) for capacitive coupling at this time, when the second coupling polarity is anti-
It is at this time inductive coupled (magnetic coupling) when the ratio of the width of the lateral dimension and coupling window 30 of rotation structure 51 is sufficiently small, when
It is at this time electromagnetism mixing when the ratio of the width of the lateral dimension and coupling window 30 of second coupling polarity inversion structures 51 is moderate
Coupling.It is to be appreciated that turn of the lateral dimension of the first coupling polarity inversion structures 41 and the ratio for the width for coupling window 30
It changes and is consistent with the lateral dimension of the second coupling polarity inversion structures 51 with the conversion of the ratio for the width for coupling window 30, with
Capacitive coupling, inductive coupled or electromagnetism hybrid coupled are realized simultaneously.
The thickness of the conductive shielding layer of second sunken regions, 50 inner surface setting and the conduction for being coated to medium external surface
The thickness of shielded layer is equal.
Second sunken regions 50 are corresponding with the first sunken regions 40, i.e. the cross sectional shape of the second sunken regions 50, size, position
It sets identical as the first sunken regions 40, it is possible to understand that ground can also be different.Second coupling polarity inversion structures 51 and the first coupling
It is corresponding to close polarity inversion structures 41, i.e., the cross sectional shape of the second coupling polarity inversion structures 51, size, position are coupled with first
Polarity inversion structures 41 are identical, it is possible to understand that ground can also be different.
The conductive shielding layer of second sunken regions, 50 bottom surface forms the second coupling polarity inversion structures 51 by etching technics,
That is the formation of the second coupling polarity inversion structures 51 is to use etching such as on the conductive shielding layer of 50 bottom surface of the second sunken regions
The techniques such as photoetching remove a part of conducting screen according to 2 shapes of cross sectional shape such as the present embodiment of the second coupling polarity inversion structures 51
Layer is covered to be formed, it is easy to process.
With reference to Figure 10, in ninth embodiment of the invention, different from the first embodiment, the first coupling polarity inversion structures
41 cross sectional shape is interlocking tooth shape.
With reference to Figure 11, in tenth embodiment of the invention, unlike the 9th embodiment, the lower surface of coupling window 30 is set
There are the second sunken regions 50, the both ends of the second sunken regions 50 extend respectively to first medium resonator 11 and third dielectric resonance
Device 13.The inner surface of second sunken regions 50 is equipped with conductive shielding layer, shape on the conductive shielding layer of 50 bottom surface of the second sunken regions
It is inverted at having for realizing the second coupling polarity capacitively coupled between first medium resonator 11 and third dielectric resonator 13
Structure 51, the second coupling polarity inversion structures 51 form non-conductive shield region.Under the effect and first of second sunken regions 50
The effect in heavy region 40 is identical, the effect and the effect of the first coupling polarity inversion structures 41 of the second coupling polarity inversion structures 51
It is identical.By the way that two coupling polarity inversion structures are arranged, can reinforce first medium resonator 11 and third dielectric resonator 13 it
Between capacitive coupling, further reduce the loss to Q value, and easy to process, molding difficulty it is low.By changing the second coupling pole
Sex reversal structure 51 lateral dimension (transverse direction of the second coupling polarity inversion structures 51 i.e. and first medium resonator 11, third
The parallel direction of the length direction of dielectric resonator 13) and the width of window 30 is coupled (i.e. between the two sidewalls of coupling window 30
Distance) ratio, the coupling polarity between first medium resonator 11 and second medium resonator 13 also can be changed, i.e., by holding
Property coupling be changed into other such as inductive coupled, electromagnetism hybrid coupleds.For example, when the transverse direction of the second coupling polarity inversion structures 51
When the ratio of the width of size and coupling window 30 is sufficiently large, (it is electrically coupled) for capacitive coupling at this time, when the second coupling polarity is anti-
It is at this time inductive coupled (magnetic coupling) when the ratio of the width of the lateral dimension and coupling window 30 of rotation structure 51 is sufficiently small, when
It is at this time electromagnetism mixing when the ratio of the width of the lateral dimension and coupling window 30 of second coupling polarity inversion structures 51 is moderate
Coupling.It is to be appreciated that turn of the lateral dimension of the first coupling polarity inversion structures 41 and the ratio for the width for coupling window 30
It changes and is consistent with the lateral dimension of the second coupling polarity inversion structures 51 with the conversion of the ratio for the width for coupling window 30, with
Capacitive coupling, inductive coupled or electromagnetism hybrid coupled are realized simultaneously.
The thickness of the conductive shielding layer of second sunken regions, 50 inner surface setting and the conduction for being coated to medium external surface
The thickness of shielded layer is equal.
Second sunken regions 50 are corresponding with the first sunken regions 40, i.e. the cross sectional shape of the second sunken regions 50, size, position
It sets identical as the first sunken regions 40, it is possible to understand that ground can also be different.Second coupling polarity inversion structures 51 and the first coupling
It is corresponding to close polarity inversion structures 41, i.e., the cross sectional shape of the second coupling polarity inversion structures 51, size, position are coupled with first
Polarity inversion structures 41 are identical, it is possible to understand that ground can also be different.
Second coupling polarity inversion structures 51 are a through-hole structure, and the conductive shielding layer of 50 bottom surface of the second sunken regions passes through
Etching technics forms the second coupling polarity inversion structures 51, i.e. the formation of the second coupling polarity inversion structures 51 is sunk second
Using etching such as photoetching technique according to the section of the second coupling polarity inversion structures 51 on the conductive shielding layer of 50 bottom surface of region
The interlocking tooth shape of shape such as the present embodiment is removed a part of conductive shielding layer and is formed, easy to process.
In other embodiments, dielectric waveguide filter can also be the dielectric resonator including other quantity, such as four
A, five, the dielectric resonator of six or six or more quantity, can carry out the number of setting dielectric resonator according to the actual situation
Amount.First coupling polarity inversion structures 41, the second coupling polarity inversion structures 51 cross sectional shape can also be other shapes, example
Such as Z-shaped, 3 shapes, W-shaped, N shape shape can carry out setting the first coupling polarity inversion structures 41, the second coupling according to the actual situation
Close the cross sectional shape of polarity inversion structures 51.
Above embodiments only express the preferred embodiment of the present invention, and the description thereof is more specific and detailed, but can not
Therefore limitations on the scope of the patent of the present invention are interpreted as.It should be pointed out that for those of ordinary skill in the art,
Without departing from the inventive concept of the premise, various modifications and improvements can be made, such as special to the difference in each embodiment
Sign is combined, and these are all within the scope of protection of the present invention.
Claims (10)
1. a kind of dielectric waveguide filter, including two adjacent dielectric resonators, it is characterised in that: described two dielectric resonances
Between device formed coupling window, it is described coupling window upper surface be equipped with the first sunken regions, the two of first sunken regions
End extends respectively to described two dielectric resonators；The inner surface of first sunken regions is equipped with conductive shielding layer, under first
The first coupling polarity inversion structures, the first coupling polarity inversion structures shape are formed on the conductive shielding layer of heavy region bottom surface
At non-conductive shield region.
2. dielectric waveguide filter according to claim 1, it is characterised in that: the conduction of first sunken regions bottom surface
Shielded layer forms the first coupling polarity inversion structures by etching technics.
3. dielectric waveguide filter according to claim 1, it is characterised in that: the lower surface of the coupling window is equipped with the
Two sunken regions, the both ends of second sunken regions extend respectively to described two dielectric resonators, second sinker area
The inner surface in domain is equipped with conductive shielding layer, and the reversion of the second coupling polarity is formed on the conductive shielding layer of the second sunken regions bottom surface
Structure, the second coupling polarity inversion structures form non-conductive shield region.
4. dielectric waveguide filter according to claim 3, it is characterised in that: the conduction of second sunken regions bottom surface
Shielded layer forms the second coupling polarity inversion structures by etching technics.
5. dielectric waveguide filter according to claim 1, it is characterised in that: the first coupling polarity inversion structures
Cross sectional shape is S-shaped, L shape, 2 shapes, Z-shaped, E shape, U-shaped or interlocking tooth shape.
6. dielectric waveguide filter according to claim 1, it is characterised in that: the upper surface of described two dielectric resonators
It is respectively equipped with tuning blind hole, first sunken regions are located between the tuning blind hole of two dielectric resonators.
7. dielectric waveguide filter according to claim 1, it is characterised in that: each dielectric resonator include dielectric with
And it is coated to the conductive shielding layer of medium external surface, the thickness of the conductive shielding layer of the inner surface setting of first sunken regions
It spends equal with the thickness for the conductive shielding layer for being coated to medium external surface.
8. dielectric waveguide filter according to claim 1, it is characterised in that: it is described coupling window two sidewalls with it is described
The first vacancy and the second vacancy are respectively formed between two dielectric resonators.
9. dielectric waveguide filter according to claim 8, it is characterised in that: described two dielectric resonators are respectively
One dielectric resonator and third dielectric resonator, the dielectric waveguide filter further include be located at the first medium resonator and
Second medium resonator except the line of third dielectric resonator.
10. dielectric waveguide filter according to claim 9, it is characterised in that: the second medium resonator and first
Third vacancy, tetravacancy are respectively formed between dielectric resonator, third dielectric resonator, second vacancy, third are empty
It is interconnected between position and tetravacancy.
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| CN201910822860.6A CN110518313A (en) | 2019-09-02 | 2019-09-02 | A kind of dielectric waveguide filter |
| PCT/CN2019/115064 WO2021031356A1 (en) | 2019-08-22 | 2019-11-01 | Dielectric waveguide filter |
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| CN201910822860.6A CN110518313A (en) | 2019-09-02 | 2019-09-02 | A kind of dielectric waveguide filter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2021031356A1 (en) * | 2019-08-22 | 2021-02-25 | 深圳国人科技股份有限公司 | Dielectric waveguide filter |
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| JP2000068705A (en) * | 1998-08-19 | 2000-03-03 | Taiyo Yuden Co Ltd | Dielectric resonator and filter using this |
| US20040212460A1 (en) * | 2003-04-22 | 2004-10-28 | Nobuhiro Harada | Dielectric filter |
| CN107069155A (en) * | 2017-01-12 | 2017-08-18 | 深圳三星通信技术研究有限公司 | A kind of dielectric waveguide filter and its coupling inversion structures |
| CN108598635A (en) * | 2013-05-31 | 2018-09-28 | 华为技术有限公司 | Dielectric filter, transceiver and base station |
| CN110148819A (en) * | 2019-06-20 | 2019-08-20 | 京信通信技术(广州)有限公司 | The capacitive coupling structure and dielectric waveguide filter of dielectric waveguide filter |
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| JP2000068705A (en) * | 1998-08-19 | 2000-03-03 | Taiyo Yuden Co Ltd | Dielectric resonator and filter using this |
| US20040212460A1 (en) * | 2003-04-22 | 2004-10-28 | Nobuhiro Harada | Dielectric filter |
| CN108598635A (en) * | 2013-05-31 | 2018-09-28 | 华为技术有限公司 | Dielectric filter, transceiver and base station |
| CN107069155A (en) * | 2017-01-12 | 2017-08-18 | 深圳三星通信技术研究有限公司 | A kind of dielectric waveguide filter and its coupling inversion structures |
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| WO2021031356A1 (en) * | 2019-08-22 | 2021-02-25 | 深圳国人科技股份有限公司 | Dielectric waveguide filter |
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Address after: 518000 5th floor, building 1, Guoren science and Technology Park, the intersection of Jinxiu middle road and Cuijing Road, Longtian street, Pingshan District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Guoren Technology Co.,Ltd. Address before: 518000 7F, B 7F, China Science and technology three road, central high tech Zone, Shenzhen, Guangdong Applicant before: SHENZHEN GRENTECH RF COMMUNICATION Ltd. |
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Application publication date: 20191129 |