WO2021027129A1 - 显示面板 - Google Patents

显示面板 Download PDF

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Publication number
WO2021027129A1
WO2021027129A1 PCT/CN2019/117101 CN2019117101W WO2021027129A1 WO 2021027129 A1 WO2021027129 A1 WO 2021027129A1 CN 2019117101 W CN2019117101 W CN 2019117101W WO 2021027129 A1 WO2021027129 A1 WO 2021027129A1
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WIPO (PCT)
Prior art keywords
light
pixel
anode
cathode
filter
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Ceased
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PCT/CN2019/117101
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English (en)
French (fr)
Inventor
蔡振飞
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/620,894 priority Critical patent/US11121183B2/en
Publication of WO2021027129A1 publication Critical patent/WO2021027129A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different

Definitions

  • the present invention relates to the field of electronic display, in particular to a display panel.
  • AMOLED Active-matrix organic light-emitting diode
  • the present invention provides a display panel to eliminate the color shift caused by the difference in light changes between pixels of different colors.
  • the present invention provides a display panel, the display panel includes a display area, the display area includes a plurality of pixel units, each pixel unit includes at least one red pixel, at least one green A light pixel point and at least one blue light pixel point; wherein the red light pixel point includes a red light resonant cavity, and the green light pixel point includes a green light resonant cavity.
  • the red light resonant cavity and the green light resonant cavity both include a transflective film, and the material for forming the transflective film includes a transflective metal.
  • the transflective metal includes one or a combination of silver, platinum, nickel, and gold.
  • the red light resonant cavity and the green light resonant cavity are made of the same material, and the thickness of the red light resonant cavity is greater than the thickness of the green light resonant cavity.
  • the color and brightness changes of the light emitted by the red pixel after being processed by the red light resonator are the same as the light emitted by the blue pixel; the light emitted by the green pixel passes through
  • the color and brightness changes after the processing of the green light cavity are the same as the light emitted by the blue pixel points.
  • the red light pixel point, the green light pixel point and the blue light pixel point include a pixel drive circuit, a light emitting layer and a filter; wherein,
  • the pixel driving circuit includes a plurality of thin film transistors
  • the light-emitting layer is located above the pixel driving circuit and includes:
  • An anode the anode is electrically connected to the pixel driving circuit
  • Luminescent material the luminescent material is located on the anode
  • a cathode covers the luminescent material
  • the filter is located on the light-emitting surface of the light-emitting layer, wherein the filter of the red pixel is a red filter, the filter of the green pixel is a green filter, and the filter of the blue pixel is a green filter.
  • the filter is a blue light filter.
  • the red light resonant cavity is located between the light-emitting layer of the red light pixel and the filter.
  • the anode is a reflective anode
  • the cathode is a light-transmitting cathode
  • the light-emitting surface of the light-emitting layer is the surface of the cathode facing away from the anode
  • the red light resonant cavity is located at the cathode.
  • the anode is a light-transmitting anode
  • the cathode is a reflective cathode
  • the light-emitting surface of the light-emitting layer is the surface of the anode facing away from the cathode
  • the red light resonant cavity is located at the anode.
  • the green light resonant cavity is located between the light emitting layer of the green light pixel and the filter.
  • the anode is a reflective anode
  • the cathode is a light-transmitting cathode
  • the light-emitting surface of the light-emitting layer is the surface of the cathode facing away from the anode
  • the green light resonant cavity is located at the cathode.
  • the anode is a light-transmitting anode
  • the cathode is a reflective cathode
  • the light-emitting surface of the light-emitting layer is the surface of the anode facing away from the cathode
  • the red light resonant cavity is located at the anode.
  • a red light resonant cavity is arranged in the red light pixel point, and a green light resonant cavity is arranged in the green light pixel point.
  • the resonant cavity can strengthen the light running in the direction perpendicular to the light exit surface, while filtering out the light running in other directions, so that the color change of red and green light is the same as that of blue light, thereby eliminating the difference between pixels of different colors.
  • the phenomenon of color shift caused by the difference of light changes.
  • FIG. 1 is a schematic structural diagram of a pixel unit in a display panel in the prior art
  • FIG. 2 is a schematic structural diagram of a pixel unit in a display panel in a specific embodiment of the present invention
  • FIG. 3 is a schematic diagram of the structure of a red light pixel in a specific embodiment of the present invention.
  • FIG. 4 is a schematic diagram of the structure of a red light pixel in another specific embodiment of the present invention.
  • FIG. 1 is a schematic structural diagram of a pixel unit in a display panel in the prior art.
  • the pixel unit includes a red light pixel, a green light pixel and a blue light pixel.
  • the red light pixel points include a cathode 10, a light emitting layer 20, an anode 30 and a red light filter 42.
  • the green light pixel points include a cathode 10, a light emitting layer 20, an anode 30 and a green light filter 44.
  • the blue pixel point includes a cathode 10, a light emitting layer 20, an anode 30 and a blue light filter 46.
  • the cathode 10 is a reflective cathode, and the anode 20 is a transparent anode. A part of the light emitted by the light-emitting layer 20 is directly emitted through the anode 20, and the other part is emitted after being reflected by the cathode 10.
  • the brightness and color of the red, green, and blue lights will shift. Due to the different wavelengths of red, green, and blue light, the color shifts they produce at large angles are also different.
  • the brightness and color shift of blue light is the largest under a large viewing angle, while the brightness and color shift of red light is the smallest. The difference between the two shifts is very large, resulting in a large difference when observing the screen under a large viewing angle. The color difference.
  • the present invention provides a display panel to eliminate the color shift caused by the difference in light changes between pixels of different colors.
  • FIG. 2 is a schematic structural diagram of a pixel unit in a display panel in a specific embodiment of the present invention
  • FIG. 3 is a schematic structural diagram of a red pixel point in a specific embodiment of the present invention.
  • the display panel in this embodiment includes a display area, the display area includes a plurality of pixel units, each of the pixel units includes at least one red pixel, at least one green pixel, and at least one blue pixel; wherein
  • the red light pixel point includes a red light resonant cavity 52, and the green light pixel point includes a green light resonant cavity 54.
  • the red light resonant cavity 52 and the green light resonant cavity 54 include a semi-transmissive reflective film
  • the material forming the semi-transparent reflective film includes a transflective metal.
  • the transflective metal includes one or a combination of silver, platinum, nickel, and gold.
  • the semi-transmissive reflection film and the electrode on the light exit surface form a parallel resonant cavity.
  • the red light resonant cavity 52 and the green light resonant cavity 54 are made of the same material. Since the wavelength of red light is greater than that of green light, the thickness of the red light resonant cavity 52 is greater than that of the green light. The thickness of the optical cavity 54.
  • the color and brightness changes of the light emitted by the red pixel after being processed by the red resonator 52 are the same as the light emitted by the blue pixel; the light emitted by the green pixel passes through the green light
  • the color and brightness changes of the resonant cavity 54 after processing are the same as the light emitted by the blue pixel points. Because the brightness and color shift of blue light is the largest under large viewing angles, after adding red and green resonators, the brightness and color shift of red and green light tend to be consistent with blue light, which improves the color shift caused by viewing angle changes. The problem.
  • the red light pixel point, the green light pixel point and the blue light pixel point include a pixel drive circuit, a light emitting layer and a filter 40.
  • the pixel driving circuit includes a plurality of thin film transistors.
  • the thin film transistor includes a substrate 101, a light-shielding metal 102, a buffer layer 103, an active region 104, a gate stack, an interlayer dielectric layer 105, a source and drain metal layer 109, and a planarization layer 106.
  • the light-emitting layer is located above the pixel driving circuit and includes an anode 30, a light-emitting material 20, and a cathode 10.
  • the anode 30 is electrically connected to the pixel driving circuit.
  • the luminescent material 20 is located on the anode 30.
  • the cathode 10 covers the luminescent material.
  • the filter 40 is located on the light emitting surface of the light emitting layer. Among them, the filter of the red pixel is the red filter 42, the filter of the green pixel is the green filter 44, and the filter of the blue pixel is the blue filter 46.
  • the display panel is a bottom-emitting display panel.
  • the anode 30 is a light-transmitting anode, such as indium tin oxide with a relatively high work function.
  • the cathode 10 is a reflective cathode, which is made of materials with high reflectivity and low resistivity, such as aluminum and silver.
  • the light-emitting surface of the light-emitting layer is the surface 30 of the anode facing away from the cathode, and the red light resonant cavity 52 is located between the anode 30 and the red filter 42.
  • the insulating layer 107 there is an insulating layer 107 between the pixel definition layer 108 and the planarization layer 106, the insulating layer 107 has an opening, and the opening is located directly under the anode 30.
  • the red filter 42 is located at the bottom of the opening, and the red resonant cavity 52 is located between the red filter 42 and the anode 30.
  • the display panel is a top-emitting display panel.
  • the anode 30 is a reflective anode made of a material with high reflectivity and low resistivity, such as aluminum, Silver etc.
  • the cathode 10 is a light-transmitting cathode, such as indium tin oxide with a relatively high work function.
  • the light-emitting surface of the light-emitting layer is the surface 10 of the cathode facing away from the anode, and the red light resonant cavity 52 is located between the cathode 10 and the filter 42.
  • an insulating layer 107 is provided above the pixel defining layer 108, and the insulating layer 107 has an opening, and the opening is located directly above the anode 30.
  • the red light resonant cavity 52 is at the bottom of the opening, and the red filter 42 is located above the red light resonant cavity 52.
  • the green light pixels can also adopt a bottom-emitting structure or a top-emitting structure.
  • the structure of the bottom-emitting display panel is shown in FIG. 3.
  • the anode 30 is a light-transmitting anode, such as indium tin oxide with a relatively high work function.
  • the cathode 10 is a reflective cathode, which is made of materials with high reflectivity and low resistivity, such as aluminum and silver.
  • the light-emitting surface of the light-emitting layer is the surface 30 of the anode facing away from the cathode, and the green light resonant cavity 54 is located between the anode 30 and the green filter 44.
  • the insulating layer 107 there is an insulating layer 107 between the pixel definition layer 108 and the planarization layer 106, the insulating layer 107 has an opening, and the opening is located directly under the anode 30.
  • the green filter 44 is located at the bottom of the opening, and the green resonant cavity 54 is located between the green filter 44 and the anode 30.
  • the display panel is a top-emitting display panel.
  • the anode 30 is a reflective anode made of a material with high reflectivity and low resistivity, such as aluminum, Silver etc.
  • the cathode 10 is a light-transmitting cathode, such as indium tin oxide with a relatively high work function.
  • the light-emitting surface of the light-emitting layer is the surface 10 of the cathode facing away from the anode, and the green light resonant cavity 54 is located between the cathode 10 and the green filter 44.
  • an insulating layer 107 is provided above the pixel defining layer 108, and the insulating layer 107 has an opening, and the opening is located directly above the anode 30.
  • the green light resonant cavity 54 is at the bottom of the opening, and the green filter 44 is located above the red light resonant cavity 52.
  • a red light resonant cavity is arranged in the red light pixel point, and a green light resonant cavity is arranged in the green light pixel point.
  • the resonant cavity can strengthen the light running in the direction perpendicular to the light exit surface, while filtering out the light running in other directions, so that the color change of red and green light is the same as that of blue light, thereby eliminating the difference between pixels of different colors.
  • the phenomenon of color shift caused by the difference of light changes.

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  • Geometry (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一种显示面板，所述显示面板包括显示区，所述显示区内包括多个像素单元，每一个所述像素单元包括至少一个红光像素点、至少一个绿光像素点和至少一个蓝光像素点；其中，所述红光像素点包括红光谐振腔（52），所述绿光像素点包括绿光谐振腔（54）。显示面板能够消除由于不同颜色的像素点之间的光线变化差异而引起的色偏现象。

Description

显示面板 技术领域
本发明涉及电子显示领域，尤其涉及一种显示面板。
 背景技术
主动矩阵有机发光二极体（Active-matrix organic light-emitting diode, AMOLED）显示面的对比度高，视角广且响应速度快，有望取缔液晶成为下一代显示器主流选择。
 技术问题
对现有的AMOLE显示面板进行光学测试时发现，随着视角的增大，色点和亮度会发生变化，而蓝色像素点的光线变化相比于红色和绿色更加明显。由于三种颜色的变化量之间存在差异，导致我们以一定角度观看屏幕时，屏幕显示的颜色会发生色偏。随着视角的变化，不同颜色之间的光线变化差异会逐渐增加，色偏也随之加重。
因此，有必要对现有技术中的显示面板进行优化，消除由于不同颜色的像素点之间的光线变化差异而引起的色偏现象。
 技术解决方案
本发明提供一种显示面板，以消除由于不同颜色的像素点之间的光线变化差异而引起的色偏现象。
为解决上述问题，本发明提供了一种显示面板，所述显示面板包括显示区，所述显示区内包括多个像素单元，每一个所述像素单元包括至少一个红光像素点、至少一个绿光像素点和至少一个蓝光像素点；其中，所述红光像素点包括红光谐振腔，所述绿光像素点包括绿光谐振腔。
根据本发明的其中一个方面，所述红光谐振腔和绿光谐振腔均包括半透反射膜，形成所述半透反射膜的材料包括半透反射型金属。
根据本发明的其中一个方面，所述半透反射型金属包括银、铂、镍、金中的一种或多种的组合。
根据本发明的其中一个方面，所述红光谐振腔和所述绿光谐振腔采用相同的材料构成，所述红光谐振腔的厚度大于所述绿光谐振腔的厚度。
根据本发明的其中一个方面，所述红光像素点发出的光线经过红光谐振腔处理之后的颜色和亮度变化与所述蓝光像素点发出的光线相同；所述绿光像素点发出的光线经过绿光谐振腔处理之后的颜色和亮度变化与所述蓝光像素点发出的光线相同。
根据本发明的其中一个方面，所述红光像素点、绿光像素点和蓝光像素点包括像素驱动电路、发光层和滤光片；其中，
所述像素驱动电路包括多个薄膜晶体管；
所述发光层位于所述像素驱动电路上方，包括：
阳极，所述阳极与所述像素驱动电路电连接；
发光材料，所述发光材料位于所述阳极上；
阴极，所述阴极覆盖所述发光材料；
所述滤光片位于所述发光层的出光面上，其中，红光像素点的滤光片为红光滤光片，绿光像素点的滤光片为绿光滤光片，蓝光像素点的滤光片为蓝光滤光片。
根据本发明的其中一个方面，所述红光谐振腔位于所述红光像素点的发光层和滤光片之间。
根据本发明的其中一个方面，所述阳极为反射阳极，所述阴极为透光阴极，所述发光层的出光面为阴极背向所述阳极的表面，所述红光谐振腔位于所述阴极和所述滤光片之间。
根据本发明的其中一个方面，所述阳极为透光阳极，所述阴极为反射阴极，所述发光层的出光面为阳极背向所述阴极的表面，所述红光谐振腔位于所述阳极和所述滤光片之间。
根据本发明的其中一个方面，所述绿光谐振腔位于所述绿光像素点的发光层和滤光片之间。
根据本发明的其中一个方面，所述阳极为反射阳极，所述阴极为透光阴极，所述发光层的出光面为阴极背向所述阳极的表面，所述绿光谐振腔位于所述阴极和所述滤光片之间。
根据本发明的其中一个方面，所述阳极为透光阳极，所述阴极为反射阴极，所述发光层的出光面为阳极背向所述阴极的表面，所述红光谐振腔位于所述阳极和所述滤光片之间。
 有益效果
本发明在红光像素点中设置了红光谐振腔，在绿光像素点中设置了绿光谐振腔。谐振腔能够对沿与出光面垂直的方向运行的光线进行加强，同时滤除沿其他方向运行的光线，使得红光和绿光的颜色变化与蓝光相同，从而消除由于不同颜色的像素点之间的光线变化差异而引起的色偏现象。
 附图说明
图1为现有技术中的显示面板中的一个像素单元的结构示意图；
图2为本发明的一个具体实施例中的显示面板中的一个像素单元的结构示意图；
图3为本发明的一个具体实施例中的红光像素点的结构示意图；
图4为本发明的另一个具体实施例中的红光像素点的结构示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
首先对现有技术进行简要说明。参见图1，图1为现有技术中的显示面板中的一个像素单元的结构示意图。所述像素单元包括一个红光像素点、一个绿光像素点和一个蓝光像素点。所述红光像素点包括阴极10、发光层20、阳极30和红光滤光片42。所述绿光像素点包括阴极10、发光层20、阳极30和绿光滤光片44。所述蓝光像素点包括阴极10、发光层20、阳极30和蓝光滤光片46。所述阴极10为反射阴极，所述阳极20位透明阳极。发光层20发出的光线一部分通过阳极20直接射出，另一部分经阴极10反射后射出。
随着观看视角的增加，红、绿、蓝三种光线的亮度和颜色会出现偏移。由于红、绿、蓝三种光线的波长不同，它们在大角度下产生的颜色偏移也不同。进过实验发现，大视角下蓝光的亮度和颜色偏移最大，而红光的亮度和颜色偏移最小，二者的偏移量差异很大，导致在大视角下观测屏幕时产生了较大的色差。
因此，本发明提供一种显示面板，以消除由于不同颜色的像素点之间的光线变化差异而引起的色偏现象。
下面将结合附图对本发明进行详细说明。参见图2和图3，图2为本发明的一个具体实施例中的显示面板中的一个像素单元的结构示意图，图3为本发明的一个具体实施例中的红光像素点的结构示意图。
本实施例中的显示面板包括显示区，所述显示区内包括多个像素单元，每一个所述像素单元包括至少一个红光像素点、至少一个绿光像素点和至少一个蓝光像素点；其中，所述红光像素点包括红光谐振腔52，所述绿光像素点包括绿光谐振腔54。
本实施例中，所述红光谐振腔52和绿光谐振腔54包括半透反射膜，形成所述半透反射膜的材料包括半透反射型金属。所述半透反射型金属包括银、铂、镍、金中的一种或多种的组合。所述半透反射膜与出光面的电极构成平行谐振腔。通过调整半透反射膜的厚度、材料、反射率以及谐振腔的宽度等参数，能够对沿谐振腔的轴线运行的光线不断增强，同时滤除沿其他方向运动的光线。
本实施例中，所述红光谐振腔52和所述绿光谐振腔54采用相同的材料构成，由于红光的波长大于绿光的波长，所述红光谐振腔52的厚度大于所述绿光谐振腔54的厚度。
本实施例中，所述红光像素点发出的光线经过红光谐振腔52处理之后的颜色和亮度变化与所述蓝光像素点发出的光线相同；所述绿光像素点发出的光线经过绿光谐振腔54处理之后的颜色和亮度变化与所述蓝光像素点发出的光线相同。由于大视角下蓝光的亮度和颜色偏移最大，增加红光谐振腔和绿光谐振腔之后，红光和绿光的亮度和颜色偏移与蓝光趋于一致，改善了因视角变化引起色偏的问题。
参见图2和图3，图2和图3中示出了本发明的其中一个实施例，所述显示面板为底发光式显示面板。所述红光像素点、绿光像素点和蓝光像素点包括像素驱动电路、发光层和滤光片40。
参见图3，所述像素驱动电路包括多个薄膜晶体管。本实施例中，所述薄膜晶体管包括基板101、遮光金属102、缓冲层103、有源区104、栅极叠层、层间介质层105、源漏金属层109和平坦化层106。
所述发光层位于所述像素驱动电路上方，包括阳极30、发光材料20和阴极10。所述阳极30与所述像素驱动电路电连接。所述发光材料20位于所述阳极30上。所述阴极10覆盖所述发光材料。
所述滤光片40位于所述发光层的出光面上。其中，红光像素点的滤光片为红光滤光片42，绿光像素点的滤光片为绿光滤光片44，蓝光像素点的滤光片为蓝光滤光片46。
下面以红光像素点为例对本发明进行说明。
本实施例中，所述显示面板为底发光式显示面板，如图3所示，所述阳极30为透光阳极，例如功函数较高的氧化铟锡。所述阴极10为反射阴极，采用高反射率低电阻率的材料制成，例如铝、银等。所述发光层的出光面为阳极背向所述阴极的表面30，所述红光谐振腔52位于所述阳极30和所述红色滤光片42之间。具体的，所述像素定义层108和平坦化层106之间具有绝缘层107，所述绝缘层107具有开口，所述开口位于所述阳极30的正下方。红色滤光片42位于所述开口底部，红光谐振腔52位于所述红色滤光片42与阳极30之间。
在本发明的另一个实施例中，所述显示面板位顶发光式显示面板，如图4所示，所述阳极30为反射阳极，采用高反射率低电阻率的材料制成，例如铝、银等。所述阴极10为透光阴极，例如功函数较高的氧化铟锡。所述发光层的出光面为阴极背向所述阳极的表面10，所述红光谐振腔52位于所述阴极10和所述滤光片42之间。具体的，所述像素定义层108上方具有绝缘层107，所述绝缘层107具有开口，所述开口位于所述阳极30的正上方。红光谐振腔52所述开口底部，所述红色滤光片42位于所述红光谐振腔52上方。
同样的，绿光像素点也可以采用底发光式结构或顶发光式结构。底发光式显示面板的结构如图3所示，所述阳极30为透光阳极，例如功函数较高的氧化铟锡。所述阴极10为反射阴极，采用高反射率低电阻率的材料制成，例如铝、银等。所述发光层的出光面为阳极背向所述阴极的表面30，所述绿光谐振腔54位于所述阳极30和所述绿色滤光片44之间。具体的，所述像素定义层108和平坦化层106之间具有绝缘层107，所述绝缘层107具有开口，所述开口位于所述阳极30的正下方。绿色滤光片44位于所述开口底部，绿光谐振腔54位于所述绿色滤光片44与阳极30之间。
在本发明的另一个实施例中，所述显示面板位顶发光式显示面板，如图4所示，所述阳极30为反射阳极，采用高反射率低电阻率的材料制成，例如铝、银等。所述阴极10为透光阴极，例如功函数较高的氧化铟锡。所述发光层的出光面为阴极背向所述阳极的表面10，绿光谐振腔54位于所述阴极10和所述绿色滤光片44之间。具体的，所述像素定义层108上方具有绝缘层107，所述绝缘层107具有开口，所述开口位于所述阳极30的正上方。绿光谐振腔54所述开口底部，所述绿色滤光片44位于所述红光谐振腔52上方。
本发明在红光像素点中设置了红光谐振腔，在绿光像素点中设置了绿光谐振腔。谐振腔能够对沿与出光面垂直的方向运行的光线进行加强，同时滤除沿其他方向运行的光线，使得红光和绿光的颜色变化与蓝光相同，从而消除由于不同颜色的像素点之间的光线变化差异而引起的色偏现象。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (12)

  1. 一种显示面板，其中，所述显示面板包括显示区，所述显示区内包括多个像素单元，每一个所述像素单元包括至少一个红光像素点、至少一个绿光像素点和至少一个蓝光像素点；其中，
    所述红光像素点包括红光谐振腔，所述绿光像素点包括绿光谐振腔。
  2. 根据权利要求1所述的显示面板，其中，所述红光谐振腔和绿光谐振腔均包括半透反射膜，形成所述半透反射膜的材料包括半透反射型金属。
  3. 根据权利要求2所述的显示面板，其中，所述半透反射型金属包括银、铂、镍、金中的一种或多种的组合。
  4. 根据权利要求2所述的显示面板，其中，所述红光谐振腔和所述绿光谐振腔采用相同的材料构成，所述红光谐振腔的厚度大于所述绿光谐振腔的厚度。
  5. 根据权利要求4所述的显示面板，其中，所述红光像素点发出的光线经过红光谐振腔处理之后的颜色和亮度变化与所述蓝光像素点发出的光线相同；所述绿光像素点发出的光线经过绿光谐振腔处理之后的颜色和亮度变化与所述蓝光像素点发出的光线相同。
  6. 根据权利要求1所述的显示面板，其中，所述红光像素点、绿光像素点和蓝光像素点包括像素驱动电路、发光层和滤光片；其中，
    所述像素驱动电路包括多个薄膜晶体管；
    所述发光层位于所述像素驱动电路上方，包括：
    阳极，所述阳极与所述像素驱动电路电连接；
    发光材料，所述发光材料位于所述阳极上；
    阴极，所述阴极覆盖所述发光材料；
    所述滤光片位于所述发光层的出光面上，其中，红光像素点的滤光片为红光滤光片，绿光像素点的滤光片为绿光滤光片，蓝光像素点的滤光片为蓝光滤光片。
  7. 根据权利要求6所述的显示面板，其中，所述红光谐振腔位于所述红光像素点的发光层和滤光片之间。
  8. 根据权利要求7所述的显示面板，其中，所述阳极为反射阳极，所述阴极为透光阴极，所述发光层的出光面为阴极背向所述阳极的表面，所述红光谐振腔位于所述阴极和所述滤光片之间。
  9. 根据权利要求7所述的显示面板，其中，所述阳极为透光阳极，所述阴极为反射阴极，所述发光层的出光面为阳极背向所述阴极的表面，所述红光谐振腔位于所述阳极和所述滤光片之间。
  10. 根据权利要求6所述的显示面板，其中，所述绿光谐振腔位于所述绿光像素点的发光层和滤光片之间。
  11. 根据权利要求10所述的显示面板，其中，所述阳极为反射阳极，所述阴极为透光阴极，所述发光层的出光面为阴极背向所述阳极的表面，所述绿光谐振腔位于所述阴极和所述滤光片之间。
  12. 根据权利要求10所述的显示面板，其中，所述阳极为透光阳极，所述阴极为反射阴极，所述发光层的出光面为阳极背向所述阴极的表面，所述红光谐振腔位于所述阳极和所述滤光片之间。
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Families Citing this family (1)

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CN111627960A (zh) * 2020-05-18 2020-09-04 武汉华星光电半导体显示技术有限公司 一种增透膜层组件、增透膜层组件制程方法及显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928624A (zh) * 2013-12-27 2014-07-16 上海天马有机发光显示技术有限公司 一种oled器件及显示装置
CN104466027A (zh) * 2014-12-30 2015-03-25 昆山国显光电有限公司 有机发光显示器的微腔结构及有机发光显示器
US20150263076A1 (en) * 2014-03-13 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
CN109148718A (zh) * 2018-08-20 2019-01-04 武汉华星光电半导体显示技术有限公司 有机发光显示面板及其制造方法
CN109904348A (zh) * 2019-03-18 2019-06-18 京东方科技集团股份有限公司 像素单元、显示面板及显示装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7180238B2 (en) * 2004-04-08 2007-02-20 Eastman Kodak Company Oled microcavity subpixels and color filter elements
JP5178088B2 (ja) * 2006-09-07 2013-04-10 キヤノン株式会社 有機発光装置
JP5407909B2 (ja) * 2010-01-29 2014-02-05 ソニー株式会社 発光素子、照明装置および表示装置
JP5567369B2 (ja) * 2010-03-26 2014-08-06 ユー・ディー・シー アイルランド リミテッド 有機電界発光素子及びこれを使用した有機電界発光ディスプレイ
CN105098094B (zh) * 2015-07-20 2017-11-17 上海和辉光电有限公司 显示面板及其oled元件
JP2017072812A (ja) * 2015-10-09 2017-04-13 株式会社ジャパンディスプレイ 表示装置
CN107154415A (zh) * 2016-03-03 2017-09-12 上海和辉光电有限公司 一种oled显示装置
CN107845731A (zh) * 2016-09-19 2018-03-27 上海和辉光电有限公司 一种有机发光器件及其制造方法
KR102573205B1 (ko) * 2016-09-30 2023-08-31 엘지디스플레이 주식회사 유기 발광 디스플레이 장치
CN106784363B (zh) * 2016-11-24 2018-11-09 上海天马有机发光显示技术有限公司 一种有机发光显示面板、电子设备以及制作方法
CN107221605A (zh) * 2017-06-13 2017-09-29 上海天马有机发光显示技术有限公司 有机发光结构以及显示装置
CN107731884B (zh) * 2017-11-20 2020-03-17 上海天马微电子有限公司 一种显示面板及显示装置
CN109817832B (zh) * 2019-02-13 2024-04-23 合肥鑫晟光电科技有限公司 一种oled显示基板及其制备方法、显示装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103928624A (zh) * 2013-12-27 2014-07-16 上海天马有机发光显示技术有限公司 一种oled器件及显示装置
US20150263076A1 (en) * 2014-03-13 2015-09-17 Semiconductor Energy Laboratory Co., Ltd. Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device
CN104466027A (zh) * 2014-12-30 2015-03-25 昆山国显光电有限公司 有机发光显示器的微腔结构及有机发光显示器
CN109148718A (zh) * 2018-08-20 2019-01-04 武汉华星光电半导体显示技术有限公司 有机发光显示面板及其制造方法
CN109904348A (zh) * 2019-03-18 2019-06-18 京东方科技集团股份有限公司 像素单元、显示面板及显示装置

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