WO2021024650A1

WO2021024650A1 - Photosensitive transfer member, method for producing resin pattern, method for producing circuit wiring, and method for producing touch panel

Info

Publication number: WO2021024650A1
Application number: PCT/JP2020/025664
Authority: WO
Inventors: 知樹松田; 壮二石坂; 晃男片山; 山田　悟
Original assignee: 富士フイルム株式会社
Priority date: 2019-08-02
Filing date: 2020-06-30
Publication date: 2021-02-11
Also published as: CN114207525A; TW202112856A; JPWO2021024650A1

Abstract

The present invention addresses one problem of providing a photosensitive transfer member with which the fluctuation of a pattern line width due to a delay after exposure is small, and the resolution of a pattern formed is excellent. In addition, the present invention addresses another problem of providing: a method for producing a resin pattern using the photosensitive transfer member; a method for producing a circuit wiring; and a method for producing a touch panel.　The photosensitive transfer member according to the present invention has a temporary support and a photosensitive resin layer, wherein the photosensitive resin layer includes a photoacid generator and at least one among polymer X and polymer Y. The polymer X includes a structural unit A having an acid group protected by an acid-labile group and a structural unit B having a 3- or 4-membered ring ether skeleton, and the polymer Y includes a structural unit A having an acid group protected by an acid-labile group, a structural unit B having a 3-membered or 4-membered ring ether skeleton, and a structural unit C having a basic group. The content of the structural unit B having the 3- or 4-membered ring ether skeleton in the photosensitive resin layer is 8.0-700.0 μmol/g with respect to the total mass of the photosensitive resin layer.　Here, when the photosensitive resin layer includes the polymer X, the photosensitive resin layer further includes a basic compound.

Description

Photosensitive transfer member, resin pattern manufacturing method, circuit wiring manufacturing method, touch panel manufacturing method

The present invention relates to a photosensitive transfer member, a resin pattern manufacturing method, a circuit wiring manufacturing method, and a touch panel manufacturing method.

In a display device equipped with a touch panel such as a capacitance type input device (specifically, an organic electroluminescence (EL) display device, a liquid crystal display device, etc. as a display device), an electrode pattern corresponding to a sensor of a visual recognition unit is used. , The peripheral wiring portion, and the wiring of the take-out wiring portion and the like are provided inside the touch panel.
Generally, in forming a patterned layer, since the number of steps for obtaining the required pattern shape is small, a photosensitive transfer member (also referred to as a photosensitive transfer material) can be used arbitrarily. A method of developing after exposing a layer of a photosensitive resin composition provided on a substrate through a mask having a desired pattern is widely used.

For example, in Patent Document 1, a photosensitive transfer material comprising "a support and a photosensitive resin composition layer containing the following (A) polymer component and (B) photoacid generator" in this order. ..
(A) A polymer component containing a polymer that satisfies at least one of the following (1) and (2).
(1) A polymer having both a structural unit (a1) having a group in which an acid group is protected by an acid-degradable group and a structural unit (a2) having a crosslinkable group.
(2) A polymer having a structural unit (a1) having a group in which an acid group is protected by an acid-degradable group and a polymer having a structural unit (a2) having a crosslinkable group are both included. Is disclosed. Patent Document 1 discloses a structural unit having at least one of an epoxy group and an oxetanyl group as the structural unit (a2) having a crosslinkable group.

Japanese Unexamined Patent Publication No. 2014-10382

The present inventors performed a positive pattern formation using the photosensitive transfer material described in Patent Document 1, and when the pattern was formed by developing after leaving it for a predetermined time after exposure (in other words, leaving it behind). After that, when the pattern was formed by development), it was found that the line width of the pattern may fluctuate depending on the leaving time. After that, the fact that the line width of the pattern formed when the pattern is formed by developing after leaving it for a predetermined time after exposure is also referred to as "the fluctuation of the pattern line width due to the placement after exposure is small". ..
Further, the photosensitive transfer material is also required to have excellent resolution of the formed pattern as a basic performance.

Therefore, it is an object of the present invention to provide a photosensitive transfer member in which the fluctuation of the pattern line width due to the placement after exposure is small and the resolution of the formed pattern is excellent.
Another object of the present invention is to provide a method for manufacturing a resin pattern using the photosensitive transfer member, a method for manufacturing a circuit wiring, and a method for manufacturing a touch panel.

As a result of diligent studies to solve the above problems, the present inventors have found that the above problems can be solved if the photosensitive resin layer has a predetermined composition, and have completed the present invention.
That is, it was found that the above problem can be solved by the following configuration.

[1] A photosensitive transfer member having a temporary support and a photosensitive resin layer.
The photosensitive resin layer is
One or more of polymer X and polymer Y,
Contains photoacid generators,
The polymer X contains a structural unit A having an acid group protected by an acid-degradable group and a structural unit B having a 3-membered ring or 4-membered ring ether skeleton.
The polymer Y contains a structural unit A having an acid group protected by an acid-degradable group, a structural unit B having a 3- or 4-membered ether skeleton, and a structural unit C having a basic group. Including
The content of the structural unit B having the ether skeleton of the 3-membered ring or the 4-membered ring in the photosensitive resin layer is 8.0 to 700.0 μmol / g with respect to the total mass of the photosensitive resin layer. There is a photosensitive transfer member.
However, when the photosensitive resin layer contains the polymer X, the photosensitive resin layer further contains a basic compound.
[2] The total content of the structural unit C having the basic group and the basic compound is 3.0 to 100.0 μmol / g with respect to the total mass of the photosensitive resin layer [1]. The photosensitive transfer member according to.
[3] The total content of the low molecular weight compound having an acid group in the photosensitive resin layer and the structural unit having an acid group contained in the polymer containing the structural unit having an acid group is the photosensitive. The photosensitive transfer member according to [1] or [2], which is 100.0 μmol / g or less with respect to the total mass of the resin layer.
[4] The structural unit A having an acid group protected by an acid-degradable group in the polymer X and the polymer Y is a structural unit represented by the formula A3 described later, [1] to [3]. ]. The photosensitive transfer member according to any one of.
[5] Described in [4], in the structural unit represented by the above formula A3, R ³¹ or R ³² and R ³³ are connected to each other to form a 5-membered ring or 6-membered ring cyclic ether. Photosensitive transfer member.
[6] The structural unit B having a 3-membered ring or 4-membered ring ether skeleton in the polymer X and the polymer Y is a structural unit having any of the partial structures represented by the formulas B1 to B3 described later. The photosensitive transfer member according to any one of [1] to [5].
[7] The structural unit B having a 3-membered ring or 4-membered ring ether skeleton in the polymer X and the polymer Y is selected from the group consisting of structural units represented by the formulas B11 to B13 described later. , [1] to [6].
[8] The photosensitive according to any one of [1] to [7], wherein the total content of the polymer X and the polymer Y is 80% by mass or more with respect to the total mass of the photosensitive resin layer. Sex transfer member.
[9] The photosensitive transfer member according to any one of [1] to [8], which contains the polymer Y.
[10] The photosensitive transfer member according to any one of [1] to [8], which contains the polymer X.
[11] The surface of the photosensitive resin layer in the photosensitive transfer member according to any one of [1] to [10] opposite to the temporary support side is brought into contact with the substrate to bring the photosensitive transfer member into contact with the substrate. And the process of bonding with the above substrate,
The process of pattern exposure of the photosensitive resin layer and
A method for producing a resin pattern, which comprises a step of developing the exposed photosensitive resin layer to form a resin pattern in this order.
[12] The surface of the photosensitive resin layer in the photosensitive transfer member according to any one of [1] to [10] opposite to the temporary support side is the conductive layer in the substrate having the conductive layer. And the step of adhering the photosensitive transfer member and the substrate having the conductive layer to the substrate.
The process of pattern exposure of the photosensitive resin layer and
The step of developing the exposed photosensitive resin layer to form a resin pattern, and
A method for manufacturing a circuit wiring, comprising, in this order, a step of etching the conductive layer in a region where the resin pattern is not arranged.
[13] The surface of the photosensitive resin layer in the photosensitive transfer member according to any one of [1] to [10] opposite to the temporary support side is the conductive layer in the substrate having the conductive layer. And the step of adhering the photosensitive transfer member and the substrate having the conductive layer to the substrate.
The process of pattern exposure of the photosensitive resin layer and
The step of developing the exposed photosensitive resin layer to form a resin pattern, and
A method for manufacturing a touch panel, comprising, in this order, a step of etching the conductive layer in a region where the resin pattern is not arranged.

According to the present invention, it is possible to provide a photosensitive transfer member in which the fluctuation of the pattern line width due to the placement after exposure is small and the resolution of the formed pattern is also excellent.
Further, according to the present invention, it is possible to provide a method for manufacturing a resin pattern using the photosensitive transfer member, a method for manufacturing a circuit wiring, and a method for manufacturing a touch panel.

It is the schematic which shows an example of the layer structure of the photosensitive transfer member which concerns on embodiment. It is a schematic diagram which shows the pattern A. It is a schematic diagram which shows the pattern B.

Hereinafter, the present invention will be described in detail.
The description of the constituent elements described below may be based on typical embodiments of the present invention, but the present invention is not limited to such embodiments.
Regarding the notation of a group (atomic group) in the present specification, unless it is contrary to the gist of the present invention, the notation without substitution and non-substitution includes a group having a substituent as well as a group having no substituent. To do. For example, the "alkyl group" includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group). Further, the "organic group" in the present specification means a group containing at least one carbon atom.
Unless otherwise specified, the substituent is preferably a monovalent substituent.
In the present specification, "-" is used to mean that the numerical values described before and after the value are included as the lower limit value and the upper limit value.
The bonding direction of the divalent group described in the present specification is not limited unless otherwise specified. For example, when Y is -COO- in the compound represented by the general formula "XYZ", Y may be -CO-O-, and is -O-CO-. You may. That is, the compound may be "X-CO-O-Z" or "X-O-CO-Z".
In the present specification, (meth) acrylate represents acrylate and methacrylate, and (meth) acrylic represents acrylic and methacrylic.
As used herein, the term "exposure" includes not only exposure using light but also drawing using particle beams such as electron beams and ion beams, unless otherwise specified. In addition, as the light used for exposure, generally, the emission line spectrum of a mercury lamp, far ultraviolet rays typified by an excimer laser, extreme ultraviolet rays (EUV (Extreme Ultraviolet) light), X-rays, and active rays such as electron beams ( Active energy rays).
In the present specification, the weight average molecular weight (Mw) and the number average molecular weight (Mn) of the resin are columns of TSKgel GMHxL, TSKgel G4000HxL, and TSKgel G2000HxL (all trade names manufactured by Toso Co., Ltd.) unless otherwise specified. It is a molecular weight converted by using polystyrene as a standard substance detected by a gel permeation chromatography (GPC) analyzer using the solvent THF (tetrahydrofuran) and a differential refractometer.

In the present specification, the term "process" is included in this term as long as the intended purpose of the process is achieved even if it cannot be clearly distinguished from other processes as well as an independent process.

In the present specification, examples of the halogen atom include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.

[Photosensitive transfer member]
The photosensitive transfer member of the present invention is
A photosensitive transfer member having a temporary support and a photosensitive resin layer.
The photosensitive resin layer is
Any one or more of the polymer X and the polymer Y (hereinafter, also referred to as “specific polymer”) and
Contains photoacid generators,
The polymer X contains a structural unit A having an acid group protected by an acid-degradable group and a structural unit B having a 3-membered ring or 4-membered ring ether skeleton.
The polymer Y contains a structural unit A having an acid group protected by an acid-degradable group, a structural unit B having a 3- or 4-membered ether skeleton, and a structural unit C having a basic group. Including
The content of the structural unit B having the ether skeleton of the 3-membered ring or the 4-membered ring in the photosensitive resin layer is 8.0 to 700.0 μmol / g with respect to the total mass of the photosensitive resin layer.
However, when the photosensitive resin layer contains the polymer X, the photosensitive resin layer further contains a basic compound.

Due to the above configuration, the photosensitive transfer member of the present invention has less variation in the pattern line width due to placement after exposure, and is also excellent in resolvability of the formed pattern. This is not clear in detail, but the present inventors speculate as follows.
A feature of the photosensitive transfer member of the present invention is that it contains a constituent unit B having a 3-membered ring or 4-membered ring ether skeleton in a predetermined content. The 3-membered or 4-membered ether skeleton in the structural unit B functions as a base for the strong acid generated in the photosensitive resin layer. That is, the 3-membered ring or 4-membered ring ether skeleton in the constituent unit B is an acid diffusion control agent capable of inactivating the strong acid by trapping the strong acid generated in the photosensitive resin layer and causing a cleavage reaction. (For example, when the ether skeleton of the 3-membered ring or 4-membered ring in the structural unit B is an epoxy group and the strong acid generated in the photosensitive resin layer is toluenesulfonic acid, the following reaction can occur). .. Since the deactivated strong acid has a weakened acidity, it does not contribute to the deprotection reaction of the structural unit A having an acid group protected by an acid-degradable group.

That is, since the photosensitive resin layer contains the structural unit B, it is possible to suppress the diffusion of the acid generated in the exposed portion to the unexposed portion even when the photosensitive transfer member is left behind after exposure.
The cleavage reaction is a slow reaction with a slower reaction rate than the neutralization reaction between the basic compound contained in the photosensitive resin layer and the acid. Therefore, if the content of the structural unit B in the photosensitive resin layer is adjusted to a predetermined amount, the structural unit B unnecessarily deactivates the acid generated from the photoacid generator in the exposed portion at the time of exposure. The photosensitive transfer member does not cause a decrease in the resolution of the pattern due to this (that is, it does not unnecessarily inhibit the deprotection reaction of the structural unit A). The present inventors have attempted to improve the stability of the photosensitive transfer member after exposure by increasing the content of the basic compound in the photosensitive resin layer, but the basic compound It has been found that as the content increases, the sensitivity of the photosensitive resin layer tends to decrease. That is, when the photosensitive resin layer contains a predetermined amount of the structural unit B, a desired effect can be exhibited while achieving good sensitivity.
According to the present study, the present inventors have found that when the content of the structural unit B in the photosensitive resin layer is 8.0 μmol / g or more with respect to the total mass of the photosensitive resin layer, the photosensitive transfer member Is, when the fluctuation of the pattern line width due to the leaving after exposure is small, and the content of the structural unit B is 700.0 μmol / g or less with respect to the total mass of the photosensitive resin layer, the photosensitive transfer is performed. It has been confirmed that the resolution of the pattern formed by the members is excellent.

Hereinafter, the photosensitive transfer member of the present invention will be described in detail.
FIG. 1 is a schematic cross-sectional view showing an example of an embodiment of the photosensitive transfer member of the present invention.
The photosensitive transfer member 100 shown in FIG. 1 has a structure in which a temporary support 12, a photosensitive resin layer 14, and a cover film 16 are laminated in this order.
The photosensitive resin layer 12 contains one or more of the polymer X and the polymer Y and a photoacid generator, and is a 3-membered or 4-membered ether contained in the polymer X and the polymer Y. The content of the structural unit B having a skeleton is 8.0 to 700.0 μmol / g with respect to the total mass of the photosensitive resin layer. However, when the photosensitive resin layer contains the polymer X, the photosensitive resin layer further contains a basic compound.

The photosensitive resin layer contained in the photosensitive transfer member of the present invention corresponds to the so-called "positive photosensitive resin composition layer", and is preferably a chemically amplified positive photosensitive resin composition layer. ..
In the photoacid generators such as the onium salt and the oxime sulfonate compound described later, the acid generated in response to active radiation (active light) catalyzes the deprotection of the protected acid group in the specific polymer. The acid produced by the action of one photon contributes to many deprotection reactions, and the quantum yield exceeds 1, which is a large value such as the power of 10, so-called chemical amplification. As a result of, high sensitivity is obtained.
On the other hand, when a quinonediazide compound is used as a photoacid generator that is sensitive to active light, an acid group is generated by a sequential photochemical reaction, but the quantum yield is always 1 or less, and it does not correspond to the chemically amplified type.

[Temporary support]
The temporary support is a support that supports the photosensitive resin layer and can be peeled off from the photosensitive resin layer.
The temporary support preferably has light transmittance in that the photosensitive resin layer can be exposed through the temporary support when the photosensitive resin layer is pattern-exposed.
Here, "having light transmittance" means that the transmittance of the main wavelength of light used for pattern exposure is 50% or more. The transmittance of the main wavelength of the light used for the pattern exposure is preferably 60% or more, more preferably 70% or more in that the exposure sensitivity is more excellent. Examples of the method for measuring the transmittance include a method of measuring using MCPD Series manufactured by Otsuka Electronics Co., Ltd.

Specific examples of the temporary support include a glass substrate, a resin film, paper, and the like, and a resin film is preferable because it is more excellent in strength, flexibility, and the like. Examples of the resin film include polyethylene terephthalate film, cellulose triacetate film, polystyrene film, polycarbonate film and the like. Of these, a biaxially stretched polyethylene terephthalate film is preferable.

The thickness of the temporary support is not particularly limited, and is preferably 5 to 200 μm, and more preferably 10 to 150 μm in terms of ease of handling and versatility.
The thickness of the temporary support depends on the material in terms of strength as a support, flexibility required for bonding to a circuit wiring forming substrate, and light transmission required in the first exposure process. Can be selected as appropriate.

Preferred embodiments of the provisional support include, for example, paragraphs 0017 to 0018 of JP2014-85643, paragraphs 0019 to 0026 of JP2016-27363, paragraphs 0041 to 0057 of WO2012 / 08168A1 and WO2018. / 179370A1 Publications are described in paragraphs 0029 to 0040, and the contents of these publications are incorporated herein by reference.

[Photosensitive resin layer]
<Specific polymer>
The photosensitive resin layer contains any one or more of polymer X and polymer Y (specific polymer).
Polymer X: A polymer containing a structural unit A having an acid group protected by an acid-degradable group and a structural unit B having a 3-membered ring or 4-membered ring ether skeleton.
Polymer Y: A weight containing a structural unit A having an acid group protected by an acid-degradable group, a structural unit B having a 3- or 4-membered ether skeleton, and a structural unit C having a basic group. Combined.
Note that the polymer X and the polymer Y differ only in whether or not they contain a structural unit C having a basic group.
Further, in the structural unit A, the "acid group protected by an acid-degradable group" means an acid group protected by a protecting group that decomposes by the action of an acid.

The polymer X and the polymer Y include a structural unit A having an acid group protected by an acid-degradable group. Therefore, in the polymer X and the polymer Y, the acid group protected by the acid-degradable group undergoes a deprotection reaction to become an acid group due to the action of an acidic substance such as an acid in a catalytic amount generated by exposure. This acid group enables the photosensitive resin layer to be dissolved in a developing solution.

As the polymer X and the polymer Y, an addition polymerization type resin is preferable, and a polymer containing a structural unit derived from (meth) acrylic acid or an ester thereof is more preferable. The polymer X and the polymer Y include a structural unit other than the structural unit derived from (meth) acrylic acid or an ester thereof, for example, a structural unit derived from a styrene compound, a structural unit derived from a vinyl compound, and the like. You may be.

Hereinafter, the polymer X will be described first.
(Polymer X)
≪Structural unit A≫
The polymer X contains a structural unit A having an acid group protected by an acid degradable group.
As the acid group and the acid-decomposable group, known ones can be used and are not particularly limited. The definition of the acid group is as described later, and specifically, a carboxy group or a phenolic hydroxyl group is preferable.
Further, even if the acid-degradable group is a group that is relatively easily decomposed by an acid (for example, an acetal-type protective group such as a 1-alkoxyalkyl group, a tetrahydropyranyl group, and a tetrahydrofuranyl group), the acid can be used. It may be a group that is relatively difficult to decompose (for example, a tertiary alkyl group such as a tert-butyl group and a tertiary alkyloxycarbonyl group such as a tert-butyloxycarbonyl group (carbonic acid ester type protective group)). .. The acid-degradable group is preferably a group having a structure protected in the form of acetal (acetal-type acid-degradable group) in that the sensitivity and resolution are more excellent.
Further, as the acid group protected by the acid-degradable group, a carboxy group protected by an acetal-type acid-degradable group is preferable in terms of more excellent sensitivity and resolution.
Further, the acid-decomposable group is preferably an acid-decomposable group having a molecular weight of 300 or less from the viewpoint of suppressing variation in the line width of the conductive wiring when applied to the formation of a conductive pattern.

As the structural unit A having an acid group protected by an acid-degradable group, the structural unit represented by the formula A1, the formula A2, or the formula A3 is preferable in that the sensitivity and the resolution are more excellent, and the structural unit A is represented by the formula A3. The structural unit is more preferable.

In formula A1, R ¹¹ and R ¹² each independently represent a hydrogen atom, an alkyl group, or an aryl group. However, at least one of R ¹¹ and R ¹² represents an alkyl group or an aryl group. R ¹³ represents an alkyl group or an aryl group. R ¹⁴ represents a hydrogen atom or a methyl group. X ¹ represents a single bond or a divalent linking group. R ¹⁵ represents a substituent. n represents an integer from 0 to 4. In addition, R ¹¹ or R ¹² and R ¹³ may be connected to each other to form a cyclic ether other than a 3-membered ring or a 4-membered ring.

In formula A2, R ²¹ and R ²² each independently represent a hydrogen atom, an alkyl group, or an aryl group. However, at least one of R ²¹ and R ²² represents an alkyl group or an aryl group. R ²³ represents an alkyl group or an aryl group. R ²⁴ is independently a hydroxy group, a halogen atom, an alkyl group, an alkoxy group, an alkenyl group, an aryl group, an aralkyl group, an alkoxycarbonyl group, a hydroxyalkyl group, an arylcarbonyl group, an aryloxycarbonyl group, or a cycloalkyl group. Represents. m represents an integer of 0 to 3. In addition, R ²¹ or R ²² and R ²³ may be connected to each other to form a cyclic ether other than a 3-membered ring or a 4-membered ring.

In formula A3, R ³¹ and R ³² each independently represent a hydrogen atom, an alkyl group, or an aryl group. However, at least one of R ³¹ and R ³² represents an alkyl group or an aryl group. R ³³ represents an alkyl group or an aryl group. R ³⁴ represents a hydrogen atom or a methyl group. X ⁰ represents a single bond or a divalent linking group. In addition, R ³¹ or R ³² and R ³³ may be connected to each other to form a cyclic ether other than a 3-membered ring or a 4-membered ring.

In the formula A3, the alkyl group represented by R ³¹ and R ³² is a linear or branched chain having 1 to 10 carbon atoms (preferably 1 to 6 carbon atoms, more preferably 1 to 4 carbon atoms). Alternatively, a cyclic alkyl group is preferable.
As the aryl group represented by R ³¹ and R ³² , a phenyl group is preferable.
As R ³¹ and R ³² , a hydrogen atom or an alkyl group having 1 to 4 carbon atoms is preferable, respectively.
The alkyl and aryl groups represented by R ³¹ and R ³² may further have a substituent.

In the formula A3, examples of the alkyl group and the aryl group represented by R ³³ include the same alkyl and aryl groups represented by R ³¹ and R ³² , respectively, and the preferred embodiments are also the same.
The alkyl group and aryl group represented by R ³³ may further have a substituent.

In the formula A3, R ³¹ or R ³² and R ³³ may be connected to each other to form a cyclic ether. However, the cyclic ether is a cyclic ether other than a 3-membered ring or a 4-membered ring, and a 5-membered ring or a 6-membered ring is preferable, and a 5-membered ring is more preferable.

In the formula A3, the divalent linking group represented by X ⁰ is not particularly limited, but an arylene group is preferable. The arylene group may further have a substituent.
As X ⁰ , a single bond is preferable.
The structural unit A represented by the above formula A3 is a structural unit having a carboxy group protected by an acetal-type acid-degradable group. When the polymer X contains the structural unit A represented by the formula A3, the sensitivity at the time of pattern formation is excellent, and the resolution is more excellent.

In Formula A3, as the R ^34, from the viewpoint of the glass transition temperature of the polymer X (Tg) may be lower and a hydrogen atom is preferable.
Among the structural units A contained in the polymer X, the content of the structural unit in which R ³⁴ is a hydrogen atom in the formula A3 is 20% by mass or more with respect to the total mass of the structural unit A contained in the polymer X. Is preferable. The content (content ratio: mass ratio) of the structural unit in which R ³⁴ in the formula A3 is a hydrogen atom in the structural unit A is calculated by a conventional method from ¹³ C-nuclear magnetic resonance spectrum (NMR) measurement. It can be confirmed by the intensity ratio of the peak intensity.

Further, as a preferred embodiment of the formulas A1 to A3, paragraphs 0044 to 0058 of International Publication No. 2018/179640 can be referred to.

In the formula A1, it is preferable that R ¹¹ or R ¹² and R ¹³ are connected to each other to form a cyclic ether other than a 3-membered ring or a 4-membered ring in that the sensitivity is more excellent. As the cyclic ether, a 5-membered ring or a 6-membered cyclic ether is preferable, a tetrahydrofuran ring or a tetrahydropyran ring is more preferable, and a tetrahydrofuran ring is further preferable.
In the formula A2, it is preferable that R ²¹ or R ²² and R ²³ are connected to each other to form a cyclic ether other than a 3-membered ring or a 4-membered ring in that the sensitivity is more excellent. As the cyclic ether, a 5-membered ring or a 6-membered cyclic ether is preferable, a tetrahydrofuran ring or a tetrahydropyran ring is more preferable, and a tetrahydrofuran ring is further preferable.
In the formula A3, it is preferable that R ³¹ or R ³² and R ³³ are connected to each other to form a cyclic ether other than a 3-membered ring or a 4-membered ring in that the sensitivity is more excellent. As the cyclic ether, a 5-membered ring or a 6-membered cyclic ether is preferable, a tetrahydrofuran ring or a tetrahydropyran ring is more preferable, and a tetrahydrofuran ring is further preferable.

The structural unit A contained in the polymer X may be one type or two or more types.
The content of the structural unit A in the polymer X (when a plurality of types of the structural unit A are contained, the total content thereof) is preferably 10 to 70% by mass, preferably 15 to 50% by mass, based on the total mass of the polymer X. % Is more preferable, and 20 to 40% by mass is further preferable. Within the above range, the resolution is further improved. The content (content ratio: mass ratio) of the structural unit A in the polymer X can be confirmed by the intensity ratio of the peak intensity calculated by a conventional method from ¹³ C-NMR measurement.

≪Structural unit B≫
Polymer X comprises a building block B having a 3- or 4-membered ether backbone.
Specific examples of the monomer forming the structural unit B having a 3-membered ether skeleton (epoxy group) include glycidyl acrylate, glycidyl methacrylate, glycidyl α-ethyl acrylate, and α-n-propyl acrylic. Glycidyl acid, α-n-butyl glycidyl acrylate, acrylic acid-3,4-epoxybutyl, methacrylic acid-3,4-epoxybutyl, acrylate-3,4-epoxycyclohexylmethyl, methacrylic acid-3,4- Epoxycyclohexylmethyl, α-ethylacrylic acid-3,4-epoxycyclohexylmethyl, o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl glycidyl ether, and paragraphs 0031 to paragraphs of Patent No. 4168443. Examples thereof include the compounds containing the alicyclic epoxy skeleton described in 0035, and these contents are incorporated in the present specification.
Specific examples of the monomer forming the structural unit B having a 4-membered ether skeleton (oxetanyl group) include the oxetanyl groups described in paragraphs 0011 to 0016 of JP-A-2001-330953 (Japanese Patent Laid-Open No. 2001-330953). Meta) acrylic acid esters and the like, the contents of which are incorporated herein by reference.

The structural unit B having a 3-membered ring or 4-membered ring ether skeleton is preferably a structural unit having any of the partial structures represented by the following formulas B1 to B3.

In formula B2, R ^b0 represents a hydrogen atom or an alkyl group.
The number of carbon atoms of the alkyl group represented by R ^b0 is preferably 1 to 10, more preferably 1 to 6, and even more preferably 1 to 4. The alkyl group is preferably linear or branched. Further, the above alkyl group may further have a substituent.

The structural unit B having a 3-membered ring or 4-membered ring ether skeleton is more preferably any of the structural units represented by the following formulas B11 to B13.

In formula B2, R ^b1 represents a hydrogen atom or a methyl group.

The structural unit B contained in the polymer X may be one type or two or more types.
The content of the structural unit B in the polymer X (when a plurality of types of the structural unit B are contained, the total content thereof) is preferably 0.1 to 20% by mass, preferably 0.1 to 20% by mass, based on the total mass of the polymer X. 1 to 15% by mass is more preferable, and 0.1 to 10% by mass is further preferable. The content (content ratio: mass ratio) of the structural unit B in the polymer X can be confirmed by the intensity ratio of the peak intensity calculated by a conventional method from ¹³ C-NMR measurement.

≪Other building blocks≫
The polymer X may contain other structural units.
In the following, other structural units that the polymer X may contain will be described.
-Constituent unit D having an acid group
The polymer X may contain a structural unit D having an acid group (hereinafter, also referred to as “constituent unit D”).
The structural unit D is a structural unit having an acid group that is not protected by an acid-degradable group, that is, an acid group that does not have a protecting group. When the polymer X contains the structural unit D, the sensitivity at the time of pattern formation is improved, the polymer X is easily dissolved in an alkaline developer in the developing process after pattern exposure, and the developing time can be shortened.
The acid group in the present specification means a proton dissociative group having a pKa of 12 or less.
The pKa of the acid group is preferably 10 or less, more preferably 6 or less, from the viewpoint of improving sensitivity.
The lower limit of pKa of the acid group is preferably −5 or higher.
Examples of the acid group include a carboxy group, a sulfonic acid group, a phosphonic acid group, a sulfo group, a phenolic hydroxyl group, a sulfonylimide group and the like. Of these, a carboxy group or a phenolic hydroxyl group is preferable, and a carboxy group is more preferable.

The structural unit D contained in the polymer X may be only one type or two or more types.
When the polymer X contains the structural unit D, the content of the structural unit D in the polymer X (if a plurality of types of the structural unit D are contained, the total content thereof) is, for example, the total mass of the polymer X. , 0.1% by mass or more. The upper limit is not particularly limited, but is, for example, 10% by mass or less, preferably 1.0% by mass or less. The content (content ratio: mass ratio) of the structural unit D in the polymer X can be confirmed by the intensity ratio of the peak intensity calculated by a conventional method from ¹³ C-NMR measurement.

・ Structural unit E
The polymer X is a structural unit A other than the above-mentioned structural unit A, structural unit B, and structural unit D (hereinafter, also referred to as “constituent unit E”. However, the structural unit E is a structural unit C (described later). It does not include), which corresponds to the structural unit contained in the polymer Y).
The monomer forming the structural unit E is not particularly limited, and for example, styrenes, (meth) acrylic acid alkyl ester, (meth) acrylic acid cyclic alkyl ester, (meth) acrylic acid aryl ester, unsaturated dicarboxylic acid. Diesters, bicyclounsaturated compounds, maleimide compounds, unsaturated aromatic compounds, conjugated diene compounds, unsaturated monocarboxylic acids, unsaturated dicarboxylic acids, unsaturated dicarboxylic acid anhydrides, groups with an aliphatic cyclic skeleton, and others. Unsaturated compounds of.
Various properties of the polymer X can be adjusted by adjusting at least one of the type and the content using the structural unit E. In particular, by including the structural unit E, the Tg, acid value, and affinity hydrophobicity of the polymer X can be easily adjusted.

Specifically, the constituent unit E includes styrene, α-methylstyrene, acetoxystyrene, methoxystyrene, ethoxystyrene, chlorostyrene, methyl vinyl benzoate, ethyl vinyl benzoate, methyl (meth) acrylate, and (meth). Ethyl acrylate, n-propyl (meth) acrylate, isopropyl (meth) acrylate, n-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, 2-hydroxyethyl (meth) acrylate, (meth) ) 2-Hydroxypropyl acrylate, benzyl (meth) acrylate, cyclopentyl (meth) acrylate, cyclohexyl (meth) acrylate, isobornyl (meth) acrylate, acrylonitrile, or ethylene glycol monoacetate mono (meth) acrylate Examples thereof include structural units formed by polymerizing and the like. In addition, the compounds described in paragraphs 0021 to 0024 of JP2004-246623A can be mentioned.

Further, as the monomer forming the structural unit E, a (meth) acrylic acid alkyl ester is preferable from the viewpoint of further improving adhesion, and a (meth) acrylic acid alkyl ester having an alkyl group having 4 to 12 carbon atoms is preferable. Is more preferable. Specific examples thereof include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, n-butyl (meth) acrylate, and 2-ethylhexyl (meth) acrylate.

The structural unit E contained in the polymer X may be only one type or two or more types.
When the polymer X contains the structural unit E, the content of the structural unit E in the polymer X (if a plurality of structural units E are contained, the total content thereof) is 90 with respect to the total mass of the polymer X. It is preferably mass% or less, more preferably 85% by mass or less, and even more preferably 80% by mass or less. As the lower limit value, 10% by mass or more is preferable, and 20% by mass or more is more preferable. Within the above range, the resolution and adhesion are further improved. The content (content ratio: mass ratio) of the structural unit E in the polymer X can be confirmed by the intensity ratio of the peak intensity calculated by a conventional method from ¹³ C-NMR measurement.

Hereinafter, the polymer Y will be described. Note that the polymer X and the polymer Y differ only in whether or not they contain a structural unit C having a basic group.
(Polymer Y)
≪Structural unit A≫
The polymer Y contains a structural unit A having an acid group protected by an acid-degradable group.
The structural unit A having an acid group protected by an acid-degradable group has the same meaning as the structural unit A having an acid group protected by an acid-degradable group contained in the polymer X described above, and has a preferred embodiment. It is the same.

The structural unit A contained in the polymer Y may be one type or two or more types.
The content of the structural unit A in the polymer Y (when a plurality of types of the structural unit A are contained, the total content thereof) is preferably 10 to 70% by mass, preferably 15 to 50% by mass, based on the total mass of the polymer Y. % Is more preferable, and 20 to 40% by mass is further preferable. Within the above range, the resolution is further improved. The content (content ratio: mass ratio) of the structural unit A in the polymer Y can be confirmed by the intensity ratio of the peak intensity calculated by a conventional method from ¹³ C-NMR measurement.

≪Structural unit B≫
Polymer Y comprises a building block B having a 3- or 4-membered ether skeleton.
The structural unit B having a 3-membered ring or 4-membered ring ether skeleton is synonymous with the structural unit B having a 3-membered ring or 4-membered ring ether skeleton contained in the polymer X described above, and has a preferred embodiment. It is the same.

The structural unit B contained in the polymer Y may be one type or two or more types.
The content of the structural unit B in the polymer Y (when a plurality of types of the structural unit B are contained, the total content thereof) is preferably 0.1 to 20% by mass with respect to the total mass of the polymer Y. 1 to 15% by mass is more preferable, and 0.1 to 10% by mass is further preferable. The content (content ratio: mass ratio) of the structural unit B in the polymer Y can be confirmed by the intensity ratio of the peak intensity calculated by a conventional method from ¹³ C-NMR measurement.

<< Structural unit C having a basic group >>
The polymer Y contains a structural unit C having a basic group.
Specific examples of the basic group include groups having a nitrogen atom such as an aliphatic amino group, an aromatic amino group, and a nitrogen-containing heteroaromatic ring group, and an aliphatic amino group is preferable.
The aliphatic amino group may be any of a primary amino group, a secondary amino group, and a tertiary amino group, but from the viewpoint of resolvability, it may be a secondary amino group or a tertiary amino group. A secondary amino group is preferred.

Specific examples of the monomer forming a structural unit having a basic group include 1,2,2,6,6-pentamethyl-4-piperidyl methacrylate, 2- (dimethylamino) ethyl methacrylate, and acrylic methacrylic acid. Acid 2,2,6,6-tetramethyl-4-piperidyl, methacrylic acid 2,2,6,6-tetramethyl-4-piperidyl, acrylic acid 2,2,6,6-tetramethyl-4-piperidyl, 2- (Diethylamino) ethyl methacrylate, 2- (dimethylamino) ethyl acrylate, 2- (diethylamino) ethyl acrylate, N- (3-dimethylamino) propyl methacrylate, N- (3-dimethylamino) acrylate Propyl, N- (3-diethylamino) propyl methacrylate, N- (3-diethylamino) propyl acrylate, 2- (diisopropylamino) ethyl methacrylate, 2-morpholinoethyl methacrylate, 2-morpholinoethyl acrylate, N- [3- (Dimethylamino) propyl] acrylamide, 4-aminostyrene, 4-vinylpyridine, 2-vinylpyridine, 3-vinylpyridine, 1-vinylimidazole, 2-methyl-1-vinylimidazole, 1-allylimidazole, And 1-vinyl-1,2,4-triazole and the like. Of these, 1,2,2,6,6-pentamethyl-4-piperidyl methacrylate is preferred.

The structural unit C contained in the polymer Y may be only one type or two or more types.
The content of the structural unit C in the polymer Y (when a plurality of types of the structural unit C are contained, the total content thereof) is preferably 0.01 to 10% by mass, preferably 0.01 to 10% by mass, based on the total mass of the polymer Y. 01 to 5% by mass is more preferable. The content (content ratio: mass ratio) of the structural unit C in the polymer Y can be confirmed by the intensity ratio of the peak intensity calculated by a conventional method from the ¹³ C-NMR measurement.

≪Other building blocks≫
The polymer Y may contain other structural units.
In the following, other structural units that the polymer Y may contain will be described.
-Constituent unit D having an acid group
The polymer Y may contain a structural unit D having an acid group. The structural unit D having an acid group has the same meaning as the structural unit D having an acid group contained in the polymer X described above, and the preferred embodiment is also the same.

When the polymer Y contains the structural unit D, the content of the structural unit D in the polymer Y (if a plurality of types of the structural unit D are contained, the total content thereof) is, for example, the total mass of the polymer Y. , 0.1% by mass or more. The upper limit is not particularly limited, but is, for example, 10% by mass or less, preferably 1.0% by mass or less. The content (content ratio: mass ratio) of the structural unit D in the polymer Y can be confirmed by the intensity ratio of the peak intensity calculated by a conventional method from ¹³ C-NMR measurement.

・ Structural unit E
The polymer Y may include the above-mentioned structural unit A, the structural unit B, the structural unit C, and other structural units E other than the structural unit D. The structural unit E has the same meaning as the structural unit E contained in the polymer X described above, and the preferred embodiment is also the same.

The structural unit E contained in the polymer Y may be only one type or two or more types.
When the polymer Y contains the structural unit E, the content of the structural unit E in the polymer Y (or the total content when a plurality of types of the structural units E are contained) is 90 with respect to the total mass of the polymer Y. It is preferably mass% or less, more preferably 85% by mass or less, and even more preferably 80% by mass or less. As the lower limit value, 10% by mass or more is preferable, and 20% by mass or more is more preferable. Within the above range, the resolution and adhesion are further improved. The content (content ratio: mass ratio) of the structural unit E in the polymer Y can be confirmed by the intensity ratio of the peak intensity calculated by a conventional method from ¹³ C-NMR measurement.

(Weight average molecular weight of specific polymer)
The weight average molecular weight of the specific polymer is preferably a polystyrene-equivalent weight average molecular weight of 60,000 or less. When the weight average molecular weight of the specific polymer is 60,000 or less, transfer at a low temperature (for example, 130 ° C. or less) can be realized when transferring the photosensitive transfer member.
The weight average molecular weight of the specific polymer is preferably 2,000 to 60,000, more preferably 3,000 to 50,000, and particularly preferably 10,000 to 40,000 from the viewpoint of suppressing the development residue.
The ratio (dispersity) of the number average molecular weight and the weight average molecular weight of the specific polymer is preferably 1.0 to 5.0, more preferably 1.05 to 3.5.

(Method for producing a specific polymer)
The specific polymer can be synthesized by a known method.

(Content of each structural unit in the photosensitive resin layer)
In the photosensitive resin layer, the content of the structural unit B having the ether skeleton of the 3-membered ring or the 4-membered ring is 8.0 μmol / g or more with respect to the total mass of the photosensitive resin layer, and after exposure. 12.0 μmol / g or more is preferable in that the fluctuation of the pattern line width due to the placement is smaller. The upper limit thereof is 700.0 μmol / g or less, and 480.0 μmol / g or less is preferable in that the resolution of the formed pattern is more excellent.
The content of the structural unit B having the ether skeleton of the 3-membered ring or the 4-membered ring means the total content (μmol) of the structural unit B contained in the photosensitive resin layer (g). For example, when the photosensitive resin layer contains only one of the polymer X and the polymer Y, it means the content of the structural unit B in the contained polymer, and the photosensitive resin layer contains the polymer X and the polymer Y. When both of the above are included, it means the total content of the structural unit B in the polymer X and the structural unit B in the polymer Y.

Further, the total content of the structural unit C having a basic group and the basic compound described later in the photosensitive resin layer is more excellent in the resolution of the formed pattern with respect to the total mass of the photosensitive resin layer. In terms of points, 3.0 μmol / g or more is preferable, and 10.0 μmol / g or more is more preferable. Further, as the upper limit value, 100.0 μmol / g or less is preferable, and 60.0 μmol / g or less is more preferable, because the sensitivity is more excellent.
When calculating the total content of the structural unit C having a basic group and the basic compound described later, if one of the structural unit C having a basic group and the basic compound is not included, it is included. The amount of non-existent components is calculated as 0.

Further, it is preferable that the photosensitive resin layer has a small content of a polymer containing a structural unit having an acid group and a low molecular weight compound having an acid group described later. This is because these components unnecessarily react with the 3-membered ring or 4-membered ring epoxy skeleton in the structural unit B contained in the polymer X and the polymer Y. By reducing the content of the above components in the photosensitive resin layer, the reaction with the 3-membered ring or 4-membered cyclic epoxy skeleton in the structural unit B contained in the polymer X and the polymer Y can be suppressed. The fluctuation of the pattern line width due to the placement after exposure can be made smaller.
The total content of the structural unit having an acid group and the low molecular weight compound having an acid group described later in the photosensitive resin layer is preferably 100.0 μmol / g or less with respect to the total mass of the photosensitive resin layer. ..
The content of the structural unit having an acid group means the total content (μmol) of the structural unit contained in the photosensitive resin layer (g). For example, when the photosensitive resin layer contains one kind of polymer having the above-mentioned structural unit, it means the content of the structural unit having an acid group contained in the above-mentioned polymer. When the photosensitive resin layer contains a plurality of types of polymers having the above-mentioned structural units, it means the total content of the structural units having an acid group contained in the above-mentioned plurality of types of polymers.
Further, when calculating the total content of the low molecular weight compound having an acid group and the structural unit having an acid group contained in the polymer containing the structural unit having an acid group, the low molecular weight compound having an acid group When one of the above-mentioned structural units having an acid group contained in the polymer containing a structural unit having an acid group is not contained, the amount of the component not contained is calculated as 0.
Further, when the above-mentioned specific polymer contains a structural unit D having an acid group, this specific polymer corresponds to "a polymer containing a structural unit having an acid group".

The photosensitive resin layer may further contain other polymers other than the specific polymer.
When the photosensitive resin layer contains other polymers, the content of the other polymers is preferably 50% by mass or less, preferably 30% by mass or less, based on the total content of the specific polymer and the other polymers. Is more preferable, and 20% by mass or less is further preferable.
Examples of other polymers include polyhydroxystyrene. Commercially available products of polyhydroxystyrene include SMA 1000P, SMA 2000P, SMA 3000P, SMA 1440F, SMA 17352P, SMA 2625P, and SMA 3840F (all manufactured by Sartmer), ARUFON UC-3000, ARUFON UC-3510, ARUFON UC. -3900, ARUFON UC-3910, ARUFON UC-3920, and ARUFON UC-3080 (all manufactured by Toa Synthetic Co., Ltd.), and Jonclyl 690, Jonclyl 678, Jonclyl 67, and Jonclyl 586 (above, BA) And so on.

The specific polymer may be used alone or in combination of two or more.
The content of the specific polymer in the photosensitive resin layer (the total content when a plurality of types are contained) is 70% by mass or more with respect to the total mass of the photosensitive resin layer in that the sensitivity and resolution are more excellent. Is preferable, and 80% by mass or more is more preferable in that the resolution of the formed pattern is more excellent. The upper limit is not particularly limited, but for example, 99% by mass or less is preferable, and 98% by mass or less is more preferable.

<Photoacid generator>
The photosensitive resin layer contains a photoacid generator.
The photoacid generator is a compound capable of generating an acid by irradiation with active rays such as ultraviolet rays, far ultraviolet rays, X-rays, and electron beams.
As the photoacid generator, a compound that is sensitive to active light having a wavelength of 300 nm or more (preferably a wavelength of 300 to 450 nm) and generates an acid is preferable, but its chemical structure is not limited. Further, a photoacid generator that is not directly sensitive to active light having a wavelength of 300 nm or more can be used as a sensitizer if it is a compound that is sensitive to active light having a wavelength of 300 nm or more and generates an acid when used in combination with a sensitizer. Can be preferably used in combination.
As the photoacid generator, a photoacid generator that generates an acid having a pKa of 4 or less is preferable, a photoacid generator that generates an acid having a pKa of 3 or less is more preferable, and a light that generates an acid having a pKa of 2 or less is preferable. Acid generators are more preferred. The lower limit of pKa is not particularly limited, but is preferably -10.0 or higher, for example.
Further, the photoacid generator is a photoacid generator that generates an alkyl sulfonic acid having 1 to 4 carbon atoms and / or an aryl sulfonic acid in that the fluctuation of the pattern line width due to leaving after exposure is smaller. It is preferable to include a photoacid generator that is generated.

The photoacid generator may be either an ionic photoacid generator or a nonionic photoacid generator.
Examples of the ionic photoacid generator include onium salt compounds such as diaryliodonium salts and triarylsulfonium salts, and quaternary ammonium salts. Of these, onium salt compounds are preferable, and triarylsulfonium salts and diaryliodonium salts are more preferable.
Further, as the ionic photoacid generator, the ionic photoacid generator described in paragraphs 0114 to 0133 of JP-A-2014-085643 is also preferable.
Examples of the nonionic photoacid generator include trichloromethyl-s-triazines, diazomethane compounds, imide sulfonate compounds, oxime sulfonate compounds and the like. Among these, the oxime sulfonate compound is preferable in that it is more excellent in sensitivity, resolution, and adhesion.

Specific examples of the trichloromethyl-s-triazines, the diazomethane compound, and the imide sulfonate compound include the compounds described in paragraphs 0083 to 0088 of JP2011-221494.

Specific examples of the oxime sulfonate compound include the compounds described in paragraphs 0084 to 0088 of International Publication No. 2018/179640.

As the photoacid generator, one or more compounds selected from the group consisting of onium salt compounds and oxime sulfonate compounds are preferable, and oxime sulfonate compounds are more preferable, from the viewpoint of sensitivity and resolution.
Further, as the photoacid generator, a photoacid generator having the following structure is also preferable.

The photoacid generator may be used alone or in combination of two or more.
The content of the photoacid generator in the photosensitive resin layer (the total content when a plurality of types are contained) is 0.1 with respect to the total mass of the photosensitive resin layer in that the sensitivity and resolution are more excellent. It is preferably from 10% by mass, more preferably from 0.5 to 5% by mass.

<Basic compound>
When the photosensitive resin layer contains the polymer X, the photosensitive resin layer contains a basic compound. When the photosensitive resin layer contains the polymer Y, the photosensitive resin layer may contain a basic compound.
The basic compound does not include the above-mentioned polymer.
The molecular weight of the basic compound is preferably 2,000 or less, more preferably 1,000 or less, further preferably 500 or less, and particularly preferably 400 or less.
As the basic compound, an arbitrary selection can be used from the basic compounds used in the chemically amplified resist, and for example, aliphatic amines, aromatic amines, heterocyclic amines, quaternary ammonium hydroxides, and carboxylic acids can be used. Examples include quaternary ammonium salts of acids. Specific examples of these include the compounds described in paragraphs 0204 to 0207 of JP-A-2011-22149, the contents of which are incorporated in the present specification.
Examples of the aliphatic amine include trimethylamine, diethylamine, triethylamine, di-n-propylamine, tri-n-propylamine, di-n-pentylamine, tri-n-pentylamine, diethanolamine, triethanolamine and dicyclohexylamine. , And dicyclohexylmethylamine and the like.
Examples of the aromatic amine include aniline, benzylamine, N, N-dimethylaniline, diphenylamine and the like.
Examples of the heterocyclic amine include pyridine, 2-methylpyridine, 4-methylpyridine, 2-ethylpyridine, 4-ethylpyridine, 2-phenylpyridine, 4-phenylpyridine, N-methyl-4-phenylpyridine, and the like. 4-Dimethylaminopyridine, imidazole, benzimidazole, 4-methylimidazole, 2-phenylbenzimidazole, 2,4,5-triphenylimidazole, nicotine, nicotinic acid, nicotinic acid amide, quinoline, 8-oxyquinolin, pyrazine, Pyrazole, pyridazine, purine, pyrrolidine, piperidine, piperazine, morpholine, 4-methylmorpholine, 1,5-diazabicyclo [4.3.0] -5-nonen, and 1,8-diazabicyclo [5.3.0]- 7-Undesen and the like can be mentioned.
Examples of the quaternary ammonium salt of the carboxylic acid include tetramethylammonium acetate, tetramethylammonium benzoate, tetra-n-butylammonium acetate, and tetra-n-butylammonium benzoate.
Further, as the basic compound, N-cyclohexyl-N'-[2- (4-morpholinyl) ethyl] thiourea (CMTU) can also be preferably used. Further, as a commercially available product of CMTU, for example, it can be obtained from Toyo Kasei Kogyo Co., Ltd. and the like.

The basic compound may be used alone or in combination of two or more.
The content of the basic compound is as described above.

<Low molecular weight compounds with acid groups>
The photosensitive resin layer may contain a low molecular weight compound having an acid group.
The low molecular weight compound having an acid group is intended to be a non-polymer having no repeating unit, and does not include the above-mentioned polymer.
The low molecular weight compound having an acid group is preferably 2,000 or less, more preferably 1,000 or less, further preferably 500 or less, and particularly preferably 400 or less.
The acid group means a proton dissociative group having a pKa of 12 or less.
The definition of the acid group is as described above, and specific examples thereof include a carboxy group, a sulfonamide group, a phosphonic acid group, a sulfo group, a phenolic hydroxyl group, and a sulfonylimide group.
Examples of the low molecular weight compound having an acid group include benzoic acid and the like.

The low molecular weight compound having an acid group may be used alone or in combination of two or more.
The content of the low molecular weight compound having an acid group is as described above.

<Other additives>
The photosensitive resin layer may contain other additives, if necessary.
Examples of other additives include surfactants, plasticizers, sensitizers, heterocyclic compounds, alkoxysilane compounds and the like, and surfactants are preferable from the viewpoint of thickness uniformity.

Examples of the surfactant include anionic surfactants, cationic surfactants, nonionic (nonionic) surfactants, and amphoteric surfactants, and nonionic surfactants are preferable.
Examples of the nonionic surfactant include polyoxyethylene higher alkyl ethers, polyoxyethylene higher alkylphenyl ethers, polyoxyethylene glycol higher fatty acid diesters, silicone-based surfactants, and fluorine-based surfactants. Can be mentioned.

As the surfactant, for example, the surfactant described in paragraphs 0120 to 0125 of International Publication No. 2018/179640 can also be used.
Further, as commercially available surfactants, for example, Megafuck F-552 and F-554 (all manufactured by DIC Corporation) can also be used.
Further, as the surfactant, the surfactants described in paragraphs 0017 of Japanese Patent No. 4502784 and paragraphs 0060 to 0071 of Japanese Patent Application Laid-Open No. 2009-237362 can also be used.

The surfactant may be used alone or in combination of two or more.
The content of the surfactant in the photosensitive resin layer (the total content when a plurality of types are contained) is preferably 0.001 to 10% by mass, preferably 0.01, based on the total mass of the photosensitive resin layer. ~ 3% by mass is more preferable.

Examples of the plasticizer, the sensitizer, the heterocyclic compound, and the alkoxysilane compound include those described in paragraphs 097 to 0119 of International Publication No. 2018/179640.

Further, the photosensitive resin layer may contain a solvent. When the photosensitive resin layer is formed by the photosensitive resin composition containing a solvent, the solvent may remain.
The content of the solvent in the photosensitive resin layer is preferably 5% by mass or less, more preferably 2% by mass or less, further preferably 1% by mass or less, and 0.5% by mass or less, based on the total mass of the photosensitive resin layer. Is particularly preferable, and 0.1% by mass or less is most preferable.

In addition, the photosensitive resin layer has other additives such as a rust preventive, a metal oxide particle, an antioxidant, a dispersant, an acid growth agent, a development accelerator, a conductive fiber, a colorant, and a thermal radical polymerization initiator. , Thermoacid generators, UV absorbers, thickeners, cross-linking agents, and known additives such as organic or inorganic precipitation inhibitors may be further included.
Preferred embodiments of these components are described in paragraphs 0165 to 0184 of JP2014-85643, respectively, and the contents of this publication are incorporated in the present specification.

<Average thickness of photosensitive resin layer>
The average thickness of the photosensitive resin layer is preferably 0.5 to 20 μm. When the average thickness of the photosensitive resin layer is 20 μm or less, the resolution of the pattern is more excellent, and when the average thickness of the photosensitive resin layer is 0.5 μm or more, the pattern linearity is preferable. The average thickness of the photosensitive resin layer is more preferably 0.8 to 15 μm, still more preferably 1.0 to 10 μm.
In the present specification, the average thickness of each layer in the photosensitive transfer member shall be measured by observing a cross section in a direction perpendicular to the surface direction of the transfer member with a scanning electron microscope (SEM). The average thickness is an average value when the thickness is measured at 10 points or more.

<Method of forming the photosensitive resin layer>
The photosensitive resin layer can be formed by preparing a photosensitive resin composition containing a component used for forming the photosensitive resin layer and a solvent, and applying and drying the photosensitive resin composition. It is also possible to prepare a composition by preparing a solution in which each component is previously dissolved in a solvent and then mixing the obtained solution at a predetermined ratio. The composition prepared as described above is preferably filtered using, for example, a filter having a pore size of 0.2 to 30 μm.
A photosensitive resin layer can be formed by applying the photosensitive resin composition on a temporary support or a cover film and drying it.
The coating method is not particularly limited, and examples thereof include known methods such as slit coating, spin coating, curtain coating, and inkjet coating.
Further, when the other layer described later is formed on the temporary support or the cover film, the photosensitive resin layer may be formed on the other layer.

(Photosensitive resin composition)
The photosensitive resin composition preferably contains a component used for forming the photosensitive resin layer and a solvent. A photosensitive resin layer can be suitably formed by mixing each component and a solvent, adjusting the viscosity, applying and drying.
The components used for forming the photosensitive resin layer are as described above.
As the solvent, a known solvent can be used, and for example, the solvent described in paragraphs 0092 to 0094 of International Publication No. 2018/179640 can be used.

Further, the solvent having a vapor pressure of 1 kPa to 16 kPa at 20 ° C. described in paragraph 0014 of JP-A-2018-1778889 can also be preferably used.
The solvent may be used alone or in combination of two or more.

The content of the solvent when the photosensitive resin composition is applied is preferably 50 to 1,900 parts by mass, more preferably 100 to 900 parts by mass, based on 100 parts by mass of the total solid content in the photosensitive resin composition. ..

[Other layers]
The photosensitive transfer member may include other layers (hereinafter, also referred to as “other layers”) other than the above-mentioned photosensitive resin layer. Examples of the other layer include a contrast enhancement layer, an intermediate layer, a cover film, a thermoplastic resin layer, and the like, and known ones can be appropriately adopted.

For preferred embodiments of the contrast enhancement layer, paragraph 0134 of International Publication No. 2018/179640, for preferred embodiments of the thermoplastic resin layer, paragraphs 0189 to 0193 of JP2014-085643, and other layers other than the above. The preferred embodiment of the above is described in paragraphs 0194 to 0196 of JP2014-085643, respectively, and the contents of this publication are incorporated in the present specification.

[Manufacturing method of photosensitive transfer member]
The method for producing the photosensitive transfer member is not particularly limited, and a known production method can be applied.
The method for producing the photosensitive transfer member preferably includes a step of forming a photosensitive resin layer by applying and drying the photosensitive resin composition on the temporary support, and a step of forming the photosensitive resin layer. After that, it is more preferable to further include a step of arranging the cover film on the photosensitive resin layer.

[Manufacturing method of resin pattern and manufacturing method of circuit wiring]
The method for producing the resin pattern of the present invention is not particularly limited as long as it is the method for producing the resin pattern using the above-mentioned photosensitive transfer member, but the method is different from that of the temporary support side of the photosensitive resin layer in the above-mentioned photosensitive transfer member. Is a step of bringing the surface on the opposite side into contact with the substrate and bonding the photosensitive transfer member and the substrate (hereinafter, also referred to as "bonding step", and this bonding is also referred to as "transfer" or "lamination"). A step of pattern-exposing the photosensitive resin layer (hereinafter, also referred to as "exposure step") and a step of developing the exposed photosensitive resin layer to form a pattern (hereinafter, also referred to as "development step"). It is preferable to include (referred to) and in this order.

The method for manufacturing the circuit wiring of the present invention is not particularly limited as long as it includes the method using the above-mentioned photosensitive transfer member, but the side opposite to the temporary support side of the photosensitive resin layer in the above-mentioned photosensitive transfer member. The step of bringing the surface of the above into contact with the conductive layer in the substrate having the conductive layer and bonding the photosensitive transfer member and the substrate having the conductive layer (bonding step), and the above-mentioned above in the above-mentioned photosensitive transfer member which has been bonded. A step of pattern-exposing the photosensitive resin layer (exposure step), a step of developing the pattern-exposed photosensitive resin layer to form a resin pattern (development step), and a region in which the resin pattern is not arranged. It is preferable to include a step of etching the conductive layer (hereinafter, may be referred to as an “etching step”) in this order.

Further, it is also preferable that the method for manufacturing the circuit wiring of the present invention has a mode in which the four steps of the bonding step, the exposure step, the developing step, and the etching step are repeated a plurality of times as one set.

The photosensitive resin layer is a positive photosensitive resin layer that leaves a portion not irradiated with active light as an image. In the above-mentioned photosensitive resin layer, by irradiating with active light, for example, a photosensitizer that generates acid by being irradiated with active light is used to increase the solubility of the exposed part. If none of the parts are cured and the obtained pattern shape is defective, the substrate can be reused (reworked) by full exposure or the like.
As an embodiment of the method for manufacturing a circuit wiring of the present invention, International Publication No. 2006/190405 can be referred to, and the contents thereof are incorporated in the present specification.

[Lasting process]
The method for manufacturing a resin pattern of the present invention and the method for manufacturing a circuit wiring of the present invention have a substrate or a conductive layer on the surface of the photosensitive resin layer in the above-mentioned photosensitive transfer member opposite to the temporary support side. It is preferable to include a step (bonding step) of bringing the photosensitive transfer member into contact with the conductive layer of the substrate and bonding the substrate or the substrate having the conductive layer.
In the bonding step, it is preferable that the photosensitive transfer member and the substrate or the substrate having the conductive layer are pressure-bonded so as to be in contact with each other. In the above aspect, the patterned photosensitive resin layer after exposure and development can be suitably used as an etching resist when etching the conductive layer.
The method of crimping the substrate or the substrate having the conductive layer with the photosensitive transfer member is not particularly limited, and a known transfer method and laminating method can be applied.
The bonding is preferably performed by pressurizing and heating with a roll or the like. A known laminator such as a laminator, a vacuum laminator, and an auto-cut laminator can be used for bonding.
In particular, in the method for manufacturing a circuit wiring of the present invention, it is preferable to use a roll-to-roll method, and therefore, a resin film is preferable as the substrate.
The roll-to-roll method will be described below.
The roll-to-roll method uses a substrate that can be wound and unwound as a substrate, and winds the substrate or a structure including the substrate before any of the steps included in the method for manufacturing the circuit wiring of the present invention. At least one of a step of unwinding (also referred to as “unwinding step”) and a step of winding up the substrate or a structure including the substrate (also referred to as “winding step”) after any of the steps. (Preferably, all steps or all steps other than the heating step) are performed while transporting the substrate or the structure including the substrate.
The unwinding method in the unwinding step and the winding method in the winding step are not particularly limited, and a known method may be used in the manufacturing method to which the roll-to-roll method is applied.

It is included in the above-mentioned substrate to which the photosensitive transfer member is bonded (hereinafter, also referred to as "substrate A") and the substrate having a conductive layer to which the photosensitive transfer member is bonded (hereinafter, also referred to as "substrate B"). As the substrate, a glass substrate, a silicon substrate, and a resin film are preferable.
The substrate A and the substrate B are preferably transparent.
The refractive index of the substrate A and the substrate B is preferably 1.50 to 1.52.
The substrate A and the substrate B may be made of a translucent substrate such as a glass substrate, and for example, tempered glass typified by Corning's gorilla glass can also be used. Further, as the material contained in the substrate A and the substrate B, the materials used in JP-A-2010-086644, JP-A-2010-152809, and JP-A-2010-257492 are also preferable.
When a resin film base material is used as the substrate A and the substrate B, it is more preferable to use a resin film having a small optical distortion and / or a high transparency. Specific materials include polyethylene terephthalate (PET), polyethylene naphthalate, polycarbonate, triacetyl cellulose, cycloolefin polymer and the like.

As the substrate B, a resin film is preferable from the viewpoint of being manufactured by a roll-to-roll method.

Examples of the conductive layer include any conductive layer used for general circuit wiring or touch panel wiring.
As the conductive layer, one or more layers selected from the group consisting of a metal layer, a conductive metal oxide layer, a graphene layer, a carbon nanotube layer, and a conductive polymer layer are preferable from the viewpoint of conductivity and fine wire forming property. A metal layer is more preferable, and a copper layer or a silver layer is further preferable.
Further, the conductive layer arranged on the substrate B may be one layer or two or more layers. When two or more conductive layers are arranged, it is preferable that the conductive layers are made of different materials.
Examples of the material of the conductive layer include a single metal and a conductive metal oxide.
Examples of the metal simple substance include Al, Zn, Cu, Fe, Ni, Cr, Mo, Ag, and Au.
Examples of the conductive metal oxide include ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), SiO _{2 and the} like. “Conductivity” means that the volume resistivity is less than 1 × 10 ⁶ Ωcm, and the volume resistivity is preferably less than 1 × 10 ⁴ Ωcm.

When a substrate having a plurality of conductive layers is used in the method for manufacturing a circuit wiring of the present invention, it is preferable that at least one of the plurality of conductive layers contains a conductive metal oxide.
As the conductive layer, it is preferable that the electrode pattern corresponds to the sensor of the visual recognition portion used in the capacitive touch panel or the wiring of the peripheral extraction portion.

[Exposure process]
The method for producing a resin pattern of the present invention and the method for producing a circuit wiring of the present invention preferably include a step (exposure step) of pattern-exposing the photosensitive resin layer after the bonding step.

In the exposure process, the detailed arrangement and specific size of the pattern are not particularly limited. At least the pattern can be made from the viewpoint that the display quality of a display device (for example, a touch panel) provided with an input device having a circuit wiring manufactured by the circuit wiring manufacturing method of the present invention can be improved and the area occupied by the take-out wiring can be as small as possible. A part (particularly the electrode pattern of the touch panel and the portion of the take-out wiring) is preferably a thin wire of 100 μm or less, and more preferably 70 μm or less.

The light source used for exposure can be appropriately selected as long as the photosensitive resin layer irradiates light in a wavelength range that can be exposed (for example, 365 nm, 405 nm, etc.). Specific examples thereof include ultra-high pressure mercury lamps, high pressure mercury lamps, metal halide lamps, and LEDs (Light Emitting Diodes).

The exposure amount is preferably 5 ~ 200mJ / cm ^2, more preferably 10 ~ 100mJ / cm ^2.

In the exposure step, the temporary support may be peeled off from the photosensitive resin layer and then the pattern exposure may be performed. Before the temporary support is peeled off, the pattern is exposed through the temporary support, and then the temporary support is peeled off. You may. In order to prevent mask contamination due to contact between the photosensitive resin layer and the mask and to avoid the influence of foreign matter adhering to the mask on the exposure, it is preferable to perform pattern exposure without peeling off the temporary support. The pattern exposure may be an exposure through a mask or a direct exposure using a laser or the like.

[Development process]
The method for producing a resin pattern of the present invention and the method for producing a circuit wiring of the present invention may include a step (development step) of developing the exposed photosensitive resin layer to form a resin pattern after the exposure step. preferable.

The exposed photosensitive resin layer in the developing step can be developed by using a developing solution.
The developing solution is not particularly limited as long as the non-image portion of the photosensitive resin layer can be removed, and a known developing solution such as the developing solution described in JP-A-5-07724 can be used. The developer is preferably a developer in which the exposed portion (positive type) of the photosensitive resin layer has a dissolution type development behavior. For example, an alkaline aqueous solution-based developer containing a compound having pKa = 7 to 13 at a concentration of 0.05 to 5 mol / L (liter) is preferable. The developer may further contain a water-soluble organic solvent, a surfactant and the like. As the developing solution, for example, the developing solution described in paragraph 0194 of International Publication No. 2015/093271 is preferable.

The development method is not particularly limited, and any of paddle development, shower development, spin development, dip development, etc. may be used. Here, the shower development will be described. By spraying the developing solution on the photosensitive resin layer after exposure by a shower, the exposed portion can be removed. Further, after the development, it is also preferable to spray a cleaning agent or the like with a shower and rub with a brush or the like to remove the development residue. The liquid temperature of the developing solution is preferably 20 to 40 ° C.

The method for producing a resin pattern of the present invention and the method for producing a circuit wiring of the present invention may further include a post-baking step of heat-treating a pattern containing a photosensitive resin layer obtained by development.
Post-baking is preferably performed in an environment of 8.1 to 121.6 kPa, and more preferably performed in an environment of 50.66 kPa or more. On the other hand, it is more preferably performed in an environment of 111.46 kPa or less, and further preferably performed in an environment of 101.3 kPa or less.
The temperature of the post-bake is preferably 80 to 250 ° C, more preferably 110 to 170 ° C, and even more preferably 130 to 150 ° C.
The post-baking time is preferably 1 to 30 minutes, more preferably 2 to 10 minutes, still more preferably 2 to 4 minutes.
Post-baking may be performed in an air environment or a nitrogen substitution environment.

Further, the circuit wiring manufacturing method of the present invention may include other steps such as a post-exposure step before the etching step described later.

[Etching process]
The circuit wiring manufacturing method of the present invention preferably includes a step (etching step) of etching the conductive layer in the region where the resin pattern is not arranged.

In the etching step, the pattern formed from the photosensitive resin layer by the developing step is used as an etching resist, and the conductive layer is etched.
As a method of etching treatment, a method by wet etching described in paragraphs 0048 to 0054 of JP-A-2010-152155, a method by dry etching such as known plasma etching, and the like can be applied.

For example, as a method of etching treatment, a generally used wet etching method of immersing in an etching solution can be mentioned. As the etching solution used for wet etching, an acidic type or alkaline type etching solution may be appropriately selected according to the etching target.
Examples of the acidic type etching solution include an aqueous solution of an acidic component alone such as hydrochloric acid, sulfuric acid, hydrofluoric acid, and phosphoric acid, and an acidic component and a salt such as ferric chloride, ammonium fluoride, or potassium permanganate. A mixed aqueous solution and the like are exemplified. As the acidic component, a component in which a plurality of acidic components are combined may be used.
As the alkaline type etching solution, an aqueous solution of an alkaline component alone such as sodium hydroxide, potassium hydroxide, ammonia, an organic amine, and a salt of an organic amine such as tetramethylammonium hydroxide, and an alkaline component and potassium permanganate A mixed aqueous solution with a salt such as, etc. is exemplified. As the alkaline component, a component in which a plurality of alkaline components are combined may be used.

The temperature of the etching solution is not particularly limited, but is preferably 45 ° C. or lower. In the method for manufacturing a circuit wiring of the present invention, the resin pattern used as an etching mask (etching pattern) preferably exhibits particularly excellent resistance to acidic and alkaline etching solutions in a temperature range of 45 ° C. or lower. .. Therefore, the photosensitive resin layer is prevented from peeling off during the etching step, and the portion where the photosensitive resin layer does not exist is selectively etched.
After the etching step, in order to prevent contamination of the process line, a cleaning step of cleaning the etched substrate and a drying step of drying the cleaned substrate may be performed, if necessary.

[Removal process]
The circuit wiring manufacturing method of the present invention preferably includes a step (removal step) of removing the resin pattern.
The removing step is not particularly limited and can be performed as needed, but it is preferably performed after the etching step.
The method for removing the remaining resin pattern is not particularly limited, but examples thereof include a method for removing by chemical treatment, and a method using a removing liquid is preferable.
Examples of the method for removing the resin pattern include a method of immersing the substrate having the resin pattern in the removing liquid being stirred at 30 to 80 ° C. (preferably 50 to 80 ° C.) for 1 to 30 minutes.

Examples of the removing solution include a removing solution in which an inorganic alkaline component or an organic alkaline component is dissolved in water, dimethyl sulfoxide, N-methylpyrrolidone, or a mixed solution thereof. Examples of the inorganic alkaline component include sodium hydroxide, potassium hydroxide and the like. Examples of the organic alkali component include a primary amine compound, a secondary amine compound, a tertiary amine compound, and a quaternary ammonium salt compound.
Further, the removing liquid may be used and removed by a spray method, a shower method, a paddle method or the like.

[Full exposure process of resin pattern]
Prior to the removal step, it is preferable to include a step of exposing the entire surface of the resin pattern (hereinafter, also referred to as a "full exposure step"). Further, if necessary, a step of heating the resin pattern exposed to the entire surface (hereinafter, also referred to as “heating step”) may be included. The full exposure step and the heating step are preferably performed after the etching step and before the removing step.
By exposing the entire surface of the resin pattern used as an etching mask after the etching step, the solubility in the removal solution and the permeability of the removal solution are improved, and the removal property is excellent even when the removal solution is used for a long time. .. Further, when the heating step is included, the reaction rate of the photoacid generator and the reaction rate of the generated acid and the positive photosensitive resin can be further improved by the heating step, and as a result, the removal performance is improved. improves.

The light source used for exposure in the full exposure process is not particularly limited, and a known exposure light source can be used. From the viewpoint of removability, it is preferable to use a light source containing light having the same wavelength as that in the exposure step.

The exposure amount in the overall exposure step, from the viewpoint of removability, preferably 5 ~ 1,000mJ / cm ^2, more preferably 10 ~ 800mJ / cm ^2, more preferably 100 ~ 500mJ / cm ^2.

From the viewpoint of removability, the exposure amount in the entire surface exposure step is preferably equal to or more than the exposure amount in the above exposure step, and more preferably larger than the exposure amount in the above exposure step.

[Other processes]
The circuit wiring manufacturing method of the present invention may include any steps (other steps) other than those described above. For example, the following steps can be mentioned, but the steps are not limited to these steps.
Further, as an example of the exposure step, the developing step, and other steps that can be included in the method for manufacturing the circuit wiring of the present invention, the methods described in paragraphs 0035 to 0051 of JP-A-2006-023696 are also preferably used. Can be done.

<Cover film peeling process>
The method for producing a resin pattern of the present invention and the method for producing a circuit wiring of the present invention are a step of peeling the cover film of the photosensitive transfer member when the photosensitive transfer member has a cover film (hereinafter, "cover film peeling step"). It is also preferable to include.). The method for peeling the cover film is not particularly limited, and a known method can be applied.

<Step to reduce visible light reflectance>
The method for manufacturing a circuit wiring of the present invention may include a step of reducing the visible light reflectance of a part or all of a plurality of conductive layers on a substrate.
Examples of the treatment for reducing the visible light reflectance include an oxidation treatment. For example, the visible light reflectance of the conductive layer can be reduced by blackening the copper by oxidizing it to obtain copper oxide.
Preferable embodiments of the treatment for reducing the visible light reflectance are described in paragraphs 0017 to 0025 of Japanese Patent Application Laid-Open No. 2014-150118, and paragraphs 0041, 0042, 0048 and 0058 of Japanese Patent Application Laid-Open No. 2013-206315. There is a description, and the contents of this publication are incorporated herein by reference.

<Step of forming an insulating film, step of forming a new conductive layer on the insulating film>
The method for manufacturing a circuit wiring of the present invention preferably includes a step of forming an insulating film on the formed circuit wiring and a step of forming a new conductive layer on the insulating film.
A second conductive pattern can be further formed by performing the four steps of the bonding step, the exposure step, the developing step, and the etching step again on the new conductive layer. That is, with such a configuration, the second conductive pattern can be formed on the substrate while being insulated from the first conductive pattern.
The procedure of the step of forming the insulating film is not particularly limited, and examples thereof include a known method of forming a permanent film. Further, an insulating film having a desired pattern may be formed by photolithography using a photosensitive material having an insulating property.
The procedure of the process of forming a new conductive layer on the insulating film is not particularly limited. A new conductive layer having a desired pattern may be formed by photolithography using a photosensitive material having conductivity.

In the circuit wiring manufacturing method of the present invention, it is also preferable to use a substrate having a plurality of conductive layers on both surfaces and to form circuits sequentially or simultaneously on the conductive layers formed on both surfaces. With such a configuration, a touch panel circuit wiring having a first conductive pattern formed on one surface of the substrate and a second conductive pattern formed on the other surface can be formed. It is also preferable to form the touch panel circuit wiring having such a configuration from both sides of the base material by roll-to-roll.

The circuit wiring manufactured by the method for manufacturing the circuit wiring of the present invention can be applied to various devices. Examples of the device provided with the circuit wiring manufactured by the method for manufacturing the circuit wiring of the present invention include an input device and the like, and a touch panel is preferable, and a capacitance type touch panel is more preferable. The input device can also be applied to display devices such as organic EL display devices and liquid crystal display devices.

[Manufacturing method of touch panel]
The method for manufacturing the touch panel of the present invention is not particularly limited as long as it includes the method using the above-mentioned photosensitive transfer member, but is on the side opposite to the temporary support side of the photosensitive resin layer in the above-mentioned photosensitive transfer member. A step of bringing the surface into contact with the conductive layer in the substrate having the conductive layer to bond the photosensitive transfer member and the substrate having the conductive layer (bonding step), and a step of pattern-exposing the photosensitive resin layer (the step of pattern exposure). The exposure step), the step of developing the exposed photosensitive resin layer to form a resin pattern (development step), and the step of etching the conductive layer in the region where the resin pattern is not arranged (etching step). ) And, are preferably included in this order.

In the touch panel manufacturing method of the present invention, specific aspects of each step and embodiments such as the order in which each step is performed are as described in the above-mentioned "Circuit wiring manufacturing method", which is a preferable embodiment. Is the same.
As a method for manufacturing a touch panel of the present invention, a known method for manufacturing a touch panel can be referred to for configurations other than those described above.
Further, the method for manufacturing a touch panel of the present invention may include an arbitrary step (other steps) other than the above-mentioned steps.

2 and 3 show an example of a mask pattern used in the method for manufacturing a touch panel of the present invention.
In the pattern A shown in FIG. 2 and the pattern B shown in FIG. 3, SL and G are non-image parts (light-shielding parts), and DL is a virtual representation of the alignment frame. In the method for manufacturing a touch panel of the present invention, for example, by exposing the photosensitive resin layer through a mask having the pattern A shown in FIG. 2, a circuit wiring having the pattern A corresponding to SL and G was formed. Can manufacture touch panels. Specifically, it can be produced by the method shown in FIG. 1 of International Publication No. 2016/190405. In an example of the manufactured touch panel, G is a portion where a transparent electrode (touch panel electrode) is formed, and SL is a portion where wiring of a peripheral take-out portion is formed.

The touch panel manufactured by the method for manufacturing a touch panel of the present invention preferably has a transparent substrate, electrodes, and an insulating layer or a protective layer.
The detection method on the touch panel may be any known method such as a resistive film method, a capacitance method, an ultrasonic method, an electromagnetic induction method, and an optical method. Of these, the capacitance method is preferable.
The touch panel type includes a so-called in-cell type (for example, those shown in FIGS. 5, 6, 7, and 8 of JP-A-2012-517501), a so-called on-cell type (for example, Japanese Patent Application Laid-Open No. 2013-168125). The one described in FIG. 19 of the publication, the one described in FIGS. 1 and 5 of Japanese Patent Application Laid-Open No. 2012-081022), OGS (One Glass Solution) type, TOR (Touch-on-Lens) type (for example, Japanese Patent Application Laid-Open No. (See FIG. 2 of 2013-054727), other configurations (for example, those shown in FIG. 6 of JP2013-164871), and various out-selling types (so-called GG, G1 and G2, GFF, GF2, GF1, G1F, etc.) and the like.

The present invention will be described in more detail below based on examples. The materials, amounts used, ratios, treatment contents, treatment procedures, etc. shown in the following examples can be appropriately changed without departing from the spirit of the present invention. Therefore, the scope of the present invention should not be construed as limiting by the examples shown below.

[Preparation and Evaluation of Photosensitive Transfer Members of Examples 1 to 19 and Comparative Examples 1 to 5]
[Various components of photosensitive resin composition]
<Polymer>
As the polymers (polymers A-1 to A-19) shown in Table 2, those synthesized according to the method for synthesizing polymer A-1 described later (Synthesis Example 3) were used.

Table 1 shows the types of monomers constituting the polymers A-1 to A-19. In each of the polymers A-1 to A-19 in Table 1, the content of each monomer is intended to be mass%.
Further, in Table 1, the "ether value (μmol / g)" represents the content (μmol / g) of the structural unit B having a 3-membered ring or 4-membered ring ether skeleton in the polymer.
Further, in Table 1, the "amine value (μmol / g)" represents the content (μmol / g) of the structural unit C having a basic group in the polymer.
Further, in Table 1, the "acid value (μmol / g)" represents the content (μmol / g) of the structural unit D having an acid group in the polymer.

The abbreviations shown in Table 1 are as follows.
THF: 2-Tetrahydrofuranyl acrylate (The one synthesized by the synthesis method described later (Synthesis Example 1) was used.)
MAEVE: 1-ethoxyethyl methacrylate (manufactured by Wako Pure Chemical Industries, Ltd.)
MATHP: Tetrahydro-2H-pyran-2-ylmethacrylate (manufactured by Shin Nakamura Chemical Industry Co., Ltd.)
MATTH: 2-Tetrahydrofuranyl methacrylate (the one synthesized by the synthesis method described later (Synthesis Example 2) was used.)
AA: Acrylic acid (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.)
GMA: Glycidyl methacrylate (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.)
OXE-30: (3-ethyloxetane-3-yl) methyl methacrylate (manufactured by Osaka Organic Chemical Industry Co., Ltd.)
M-100: Cyclomer M-100 (manufactured by Daicel Corporation)
PMPMA: 1,2,2,6,6-pentamethyl-4-piperidyl methacrylate (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.)
DMAEA: 2- (Dimethylamino) ethyl acrylate (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.)
CHA: Cyclohexyl acrylate (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.)
MMA: Methyl methacrylate (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.)
EA: Ethyl acrylate (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.)

<< Synthesis Example 1: ATHF Synthesis Method >>
Acrylic acid (72.1 g, 1.0 mol) and hexane (72.1 g) were added to the three-necked flask and cooled to 20 ° C. After adding camphorsulfonic acid (7.0 mg, 0.03 mmol) and 2-dihydrofuran (77.9 g, 1.0 mol), the mixture was stirred at 20 ° C. ± 2 ° C. for 1.5 hours and then heated to 35 ° C. And stirred for 2 hours. After laying Kyoward 200 (filter material, aluminum hydroxide powder, manufactured by Kyowa Chemical Industry Co., Ltd.) and Kyoward 1000 (filter material, hydrotalcite powder, manufactured by Kyowa Chemical Industry Co., Ltd.) on Nutche in this order, The reaction solution was filtered to obtain a filtrate. Hydroquinone monomethyl ether (MEHQ, 1.2 mg) was added to the obtained filtrate and then concentrated under reduced pressure at 40 ° C. to obtain 140.8 g of tetrahydrofuran-2-yl acrylate (ATHF) as a colorless oil. (Yield 99.0%).

<< Synthesis example 2: MATTH synthesis method >>
Tetrahydrofuran methacrylate (MATHV) by the same method as in Synthesis Example 1 described above, except that acrylic acid (72.1 g, 1.0 mol) was changed to methacrylic acid (86.1 g, 1.0 mol). ) Was synthesized.

<< Synthesis Example 3: Synthesis Example of Polymer A-1 >>
PGMEA (75.0 g) was placed in a three-necked flask, and the temperature was raised to 90 ° C. in a nitrogen atmosphere. ATHF (27.0 g), GMA (1.0 g), PMPMA (1.0 g), CHA (60.0 g), EA (11.0 g), V-601 (4.0 g), and PGMEA (75.0 g) ) Was added dropwise to a three-necked flask solution maintained at 90 ° C. ± 2 ° C. over 2 hours. After completion of the dropping, the mixture was stirred at 90 ° C. ± 2 ° C. for 2 hours to obtain polymer A-1 (solid content concentration: 40.0% by mass). The weight average molecular weight of the polymer A-1 was 27,000 as a polystyrene-equivalent value by the GPC method.

The abbreviations described in Synthesis Example 3 are as follows.
PGMEA: Propylene glycol monomethyl ether acetate (manufactured by Showa Denko KK)
V-601: Dimethyl 2,2'-azobis (2-methylpropionate) (manufactured by Fujifilm Wako Pure Chemical Industries, Ltd.)

Polymers A-2 to A-19 were also synthesized by the same method as polymer A-1, except that the monomer species shown in Table 1 were changed. Also in the synthesis of the polymers A-2 to A-19, the solid content concentration of the polymer was set to 40% by mass. The weight average molecular weight of the polymers A-2 to A-19 was in the range of 19,000 to 31,000 in terms of polystyrene by the GPC method. Table 1 shows the weight average molecular weights of the polymers A-2 to A-19.

<Photoacid generator>
The photoacid generators (B-1 to B-4) shown in Table 2 are shown below.
B-1: A photoacid generator having the following structure (synthesized according to the method described in paragraph 0227 of JP2013-047765A).

B-2: PAG103 (trade name, manufactured by BASF: photoacid generator with the following structure)

B-3: Photoacid generator having the following structure (synthesized according to the method described in paragraph 0210 of JP2014-197155A)

B-4: GSID-26-1 (trade name, manufactured by BASF: a photoacid generator having the following structure)

<Basic compound>
The basic compounds (D-1, D-2) shown in Table 2 are shown below.
D-1: Basic compound having the following structure

D-2: Trioctylamine (manufactured by Tokyo Chemical Industry Co., Ltd.)

<Surfactant>
The surfactants (C-1) shown in Table 2 are shown below.

<Low molecular weight compounds with acid groups>
The low molecular weight compounds having an acid group shown in Table 2 are as follows.
Benzoic acid (manufactured by Tokyo Chemical Industry Co., Ltd.)

<Other low molecular weight compounds>
The benzenesulfonamides shown in Table 2 are as follows.
Benzene sulfonamide (manufactured by Tokyo Chemical Industry Co., Ltd.)

[Preparation of photosensitive resin composition]
Polymers, photoacid generators, basic compounds, surfactants, and benzenesulfons so that the solid content ratios shown in Table 2 (the unit of numerical value of each component in Table 2 is parts by mass). Amid and benzoic acid are dissolved and mixed in PGMEA so as to have a solid content concentration of 10% by mass, filtered through a filter made of polytetrafluoroethylene having a pore size of 0.2 μm, and the photosensitive resin compositions of Examples and Comparative Examples are obtained. Prepared.

[Preparation of photosensitive transfer member]
The obtained photosensitive resin composition was placed on a polyethylene terephthalate (PET) film having a thickness of 30 μm as a temporary support using a slit-shaped nozzle to obtain a dry film thickness of 3.0 μm and a coating width of 1.0 m. It was applied so as to become. Then, it was passed through a drying zone at 80 ° C. for 40 seconds, and finally a polyethylene film (OSM-N manufactured by Tredegar) was pressure-bonded as a cover film to prepare a photosensitive transfer member.
The total light haze of the PET film was 0.19%. For the film haze, a haze meter HZ-2 manufactured by Suga Test Instruments Co., Ltd. was used, and the total light haze value (%) of the base small piece was measured according to JIS-K-7136.

[Performance evaluation]
<Substrate with conductive layer>
As the substrate having a conductive layer, a PET substrate with a copper layer prepared by laminating a copper layer having a thickness of 500 nm on a polyethylene terephthalate (PET) film having a thickness of 188 μm was used.

<Sensitivity evaluation>
After unwinding the prepared photosensitive transfer member, the lamirol temperature was 120 ° C., the linear pressure was 1.0 MPa, and the linear velocity was 0.5 m / min. It was laminated on the PET substrate with a copper layer described above under the above-mentioned laminating conditions. At that time, the cover film was peeled off, and lamination was performed so that the photosensitive resin layer in the photosensitive transfer member was in contact with the copper layer. After exposure with an ultra-high pressure mercury lamp via a line-and-space pattern mask (duty ratio 1: 1) having a line width of 10 μm without peeling the temporary support, the temporary support was left for 2 hours and then peeled and developed. Development was carried out by shower development for 30 seconds using a 1.0% sodium carbonate aqueous solution at 25 ° C.
When a 10 μm line-and-space pattern was formed by the above method, the residue in the space portion was observed with a scanning electron microscope (SEM) to determine the exposure amount at which the residue was completely eliminated. The obtained exposure amount was evaluated based on the following evaluation criteria. In practice, it is preferable that the evaluation is "3" or more (that is, the exposure amount is less than 200 mJ / cm ² ).
"5": 80mJ / cm less than ² "4": 80mJ / cm ² or more 150mJ / cm less than ² "3": 150mJ / cm ² or more 200mJ / cm less than ² "2": 200mJ / cm ² or more 300mJ / cm ² Less than "1": 300mJ / cm ² or more

<Evaluation of detention time dependence>
After unwinding the prepared photosensitive transfer member, the lamirol temperature was 120 ° C., the linear pressure was 1.0 MPa, and the linear velocity was 0.5 m / min. It was laminated on the PET substrate with a copper layer described above under the above-mentioned laminating conditions. At that time, the cover film was peeled off, and lamination was performed so that the photosensitive resin layer in the photosensitive transfer member was in contact with the copper layer. After exposing with a line-and-space pattern mask (duty ratio 1: 1) having a line width of 10 μm without peeling the temporary support at an exposure amount at which no residue was left in the sensitivity evaluation described above, the mixture was left to stand for 24 hours. .. After leaving, the temporary support was peeled off and developed. Development was carried out by shower development for 30 seconds using a 1.0% sodium carbonate aqueous solution at 25 ° C.
The line width of the obtained line-and-space pattern was observed with a scanning electron microscope (SEM), and the variation of the line width from 10 μm was evaluated based on the following evaluation criteria. In practice, it is preferable that the evaluation is "3" or more (that is, the fluctuation of the line width from 10 μm is less than 1.5 μm).

"5": less than 0.5 μm "4": 0.5 μm or more and less than 1.0 μm “3”: 1.0 μm or more and less than 1.5 μm “2”: 1.5 μm or more and less than 3 μm “1”: 3 μm that's all

<Evaluation of wiring resolution>
The prepared photosensitive transfer member was subjected to a roll temperature of 120 ° C., a linear pressure of 0.8 MPa, and a linear velocity of 1.0 m / min. It was laminated on the PET substrate with a copper layer described above under the above-mentioned laminating conditions. At that time, the cover film was peeled off, and lamination was performed so that the photosensitive resin layer in the photosensitive transfer member was in contact with the copper layer.
After exposure with an ultra-high pressure mercury lamp via a line-and-space pattern mask (duty ratio 1: 1) with a line width of 3 to 20 μm without peeling the temporary support, the temporary support is peeled off and developed after being left for 2 hours. did. Development was carried out by shower development for 30 seconds using a 1.0% sodium carbonate aqueous solution at 25 ° C.
Next, the copper layer was etched by a dip method for 60 seconds using a copper etching solution (Cu-02 manufactured by Kanto Chemical Co., Inc.) at 25 ° C.
After the above etching, the remaining photosensitive resin layer was peeled off by a shower using a stripping solution at 50 ° C. (KP-301 manufactured by Kanto Chemical Co., Inc.).
In the line-and-space pattern (patterned copper layer) obtained in this way, the pattern having the highest resolution was defined as the ultimate resolution. In addition, when determining the ultimate resolution, if the side wall of the pattern is rough, it is said that resolution has not been achieved. The ultimate resolution was evaluated according to the following evaluation criteria. In practice, it is preferable that the evaluation is "3" or higher.

"5": less than 4 μm "4": 4 μm or more and less than 5 μm “3”: 5 μm or more and less than 6 μm “2”: 6 μm or more and less than 7 μm “1”: 7 μm or more

Table 2 is shown below.
Further, in the "ether value (μmol / g)" column in Table 2, the "content in the polymer" is the content of the structural unit B having a 3-membered ring or 4-membered ring ether skeleton in the polymer. Represents an amount (μmol / g). Further, the “content in the photosensitive resin layer” represents the content (μmol / g) of the structural unit B having a 3-membered ring or 4-membered ring ether skeleton with respect to the total mass of the photosensitive resin layer.
Further, in the "amine value (μmol / g)" column in Table 2, the "content in the polymer" refers to the content (μmol / g) of the structural unit C having a basic group in the polymer. Represent. The "content in the photosensitive resin layer" is the content (μmol / g) of the structural unit C having a basic group and the content (μmol / g) of the basic compound with respect to the total mass of the photosensitive resin layer. Represents the total content of.
Further, in the "acid value (μmol / g)" column in Table 2, the "content in the polymer" represents the content (μmol / g) of the structural unit D having an acid group in the polymer. .. Further, the "content in the photosensitive resin layer" is the content (μmol / g) of the structural unit D having an acid group and the low molecular weight compound (benzoic acid) having an acid group with respect to the total mass of the photosensitive resin layer. Represents the total content of the content (μmol / g).
Further, in Table 2, the "ratio (%) of the polymer to the solid content" in the "polymer column" is the total solid content constituting the photosensitive resin layer (the solid content is the photosensitive resin layer). It is intended as a component and does not contain a solvent. Further, if the component forms a photosensitive resin layer, even if the property is liquid, it is regarded as a solid content) with respect to the total content of the polymer ( Mass%) is intended. In Table 2, the "ratio of the polymer to the solid content (%)" and the content of the polymer (mass%) with respect to the total mass of the photosensitive resin layer were substantially the same.

The photosensitive transfer member of the example is excellent in both the resolution of the formed pattern and the suppression of the fluctuation of the pattern line width due to the placement after exposure (detention time dependence (PED)). It is clear that.
From the results of Examples 1 to 18, the content of the structural unit B having a 3-membered ring or 4-membered ring ether skeleton in the photosensitive resin layer is 12.0 μmol / mol / relative to the total mass of the photosensitive resin layer. When it is g or more, the fluctuation of the pattern line width due to the placement after exposure is smaller, and when it is 480.0 μmol / g or less, it can be confirmed that the resolution is more excellent.
From the results of Examples 1 to 18, the total content of the structural unit C having a basic group and the basic compound described later in the photosensitive resin layer is 10.0 μmol / mol / relative to the total mass of the photosensitive resin layer. It can be confirmed that when it is g or more, the resolution is more excellent, and when it is 60.0 μmol / g or less, the sensitivity is more excellent.
From the results of Examples 1 to 18, when the content of the structural unit D having an acid group in the photosensitive resin layer is 100.0 μmol / g or less with respect to the total mass of the photosensitive resin layer, after exposure. It can be confirmed that the fluctuation of the pattern line width due to the placement of is less.
From the results of Examples 1 to 18, when the content of the specific polymer in the photosensitive resin layer is 80% by mass or more with respect to the total mass of the photosensitive resin layer, the resolution of the formed pattern Can be confirmed to be superior.

[Example 101 (second time: PET peeling exposure)]
On a 100-micron thick PET substrate, ITO was formed as a second conductive layer by sputtering to a thickness of 150 nm, and copper was formed as a first layer of a conductive layer by a vacuum deposition method to a thickness of 200 nm. Then, it was used as a circuit forming substrate.
The photosensitive transfer member obtained in Example 1 was laminated on the copper layer (Lamiroll temperature 120 ° C., linear pressure 0.8 MPa, linear velocity 1.0 m / min.). At that time, the cover film was peeled off, and lamination was performed so that the photosensitive resin layer in the photosensitive transfer member was in contact with the copper layer. The contact pattern was exposed using a photomask provided with the pattern A shown in FIG. 2, which had a structure in which the conductive layer pads were connected in one direction without peeling off the temporary support. Then, the temporary support was peeled off, developed, and washed with water to obtain pattern A. Next, the copper layer is etched with a copper etching solution (Cu-02 manufactured by Kanto Chemical Co., Ltd.), and then the ITO layer is etched with an ITO etching solution (ITO-02 manufactured by Kanto Chemical Co., Ltd.). A substrate in which both copper and ITO were drawn in pattern A was obtained.
Next, the pattern was exposed using a photomask provided with the opening of the pattern B shown in FIG. 3 in the aligned state, and the pattern was developed and washed with water. Then, the copper layer was etched with Cu-02, and the remaining photosensitive resin layer was peeled off with a stripping solution (KP-301 manufactured by Kanto Chemical Co., Inc.) to obtain a circuit wiring board.
When the obtained circuit board was observed with a microscope, there was no peeling or chipping, and the pattern was clean.

[Example 102 (second time: exposure through PET)]
On a 100-micron thick PET substrate, ITO was formed as a second conductive layer by sputtering to a thickness of 150 nm, and copper was formed as a first layer of a conductive layer by a vacuum deposition method to a thickness of 200 nm. Then, it was used as a circuit forming substrate.
The photosensitive transfer member obtained in Example 1 was unwound and laminated on a copper layer (roll temperature 120 ° C., linear pressure 0.8 MPa, linear velocity 1.0 m / min.). At that time, the cover film was peeled off, and lamination was performed so that the photosensitive resin layer in the photosensitive transfer member was in contact with the copper layer. The pattern was exposed using a photomask provided with the pattern A shown in FIG. 2, which had a structure in which the conductive layer pads were connected in one direction without peeling off the temporary support. Then, the temporary support was peeled off, developed, and washed with water to obtain pattern A. Next, the copper layer is etched with a copper etching solution (Cu-02 manufactured by Kanto Chemical Co., Ltd.), and then the ITO layer is etched with an ITO etching solution (ITO-02 manufactured by Kanto Chemical Co., Ltd.). A substrate in which both copper and ITO were drawn in pattern A was obtained.
Next, PET (A) (a PET film having a thickness of 30 μm was used as a protective layer on the remaining resist, and the total light haze was 0.19%. The film haze was a haze meter manufactured by Suga Test Instruments Co., Ltd. Using HZ-2, the total light haze value (%) of the base small piece was measured according to JIS-K-7136.) Was laminated. In this state, the pattern was exposed using a photomask provided with the opening of the pattern B shown in FIG. 3 in an aligned state, and after the PET (A) was peeled off, it was developed and washed with water. Then, the copper wiring was etched with Cu-02, and the remaining photosensitive resin layer was peeled off with a stripping solution (KP-301 manufactured by Kanto Chemical Co., Ltd.) to obtain a circuit wiring board.
When the obtained circuit board was observed with a microscope, there was no peeling or chipping, and the pattern was clean.

12: Temporary support, 14: Photosensitive resin layer, 16: Cover film, 100: Photosensitive transfer member, S, SL: Solid line part, G: Gray part, DL: Dotted line part

Claims

A photosensitive transfer member having a temporary support and a photosensitive resin layer.
The photosensitive resin layer is
One or more of polymer X and polymer Y,
Contains photoacid generators,
The polymer X contains a structural unit A having an acid group protected by an acid-degradable group and a structural unit B having a 3-membered ring or 4-membered ring ether skeleton.
The polymer Y comprises a structural unit A having an acid group protected by an acid-degradable group, a structural unit B having a 3- or 4-membered ether skeleton, and a structural unit C having a basic group. Including
The content of the structural unit B having the ether skeleton of the 3-membered ring or the 4-membered ring in the photosensitive resin layer is 8.0 to 700.0 μmol / g with respect to the total mass of the photosensitive resin layer. There is a photosensitive transfer member.
However, when the photosensitive resin layer contains the polymer X, the photosensitive resin layer further contains a basic compound.
The first aspect of the present invention, wherein the total content of the structural unit C having a basic group and the basic compound is 3.0 to 100.0 μmol / g with respect to the total mass of the photosensitive resin layer. Photosensitive transfer member.
The total content of the low molecular weight compound having an acid group in the photosensitive resin layer and the structural unit having an acid group contained in the polymer containing the structural unit having an acid group is the total content of the photosensitive resin layer. The photosensitive transfer member according to claim 1 or 2, which is 100.0 μmol / g or less based on the total mass.
Any one of claims 1 to 3, wherein the structural unit A having an acid group protected by an acid-degradable group in the polymer X and the polymer Y is a structural unit represented by the following formula A3. The photosensitive transfer member according to.

In the formula, R 31 and R 32 each independently represent a hydrogen atom, an alkyl group, or an aryl group. However, at least one of R 31 and R 32 represents an alkyl group or an aryl group. R 33 represents an alkyl group or an aryl group. R 34 represents a hydrogen atom or a methyl group. X 0 represents a single bond or a divalent linking group. In addition, R 31 or R 32 and R 33 may be connected to each other to form a cyclic ether other than a 3-membered ring or a 4-membered ring.
The photosensitive unit according to claim 4, wherein in the structural unit represented by the formula A3, R 31 or R 32 and R 33 are connected to each other to form a 5-membered ring or 6-membered ring cyclic ether. Transfer member.
Claimed that the structural unit B having a 3-membered ring or 4-membered ring ether skeleton in the polymer X and the polymer Y is a structural unit having any of the partial structures represented by the following formulas B1 to B3. The photosensitive transfer member according to any one of 1 to 5.

In formula B2, R b0 represents a hydrogen atom or an alkyl group.
Claim 1 in which the structural unit B having a 3-membered ring or 4-membered ring ether skeleton in the polymer X and the polymer Y is selected from the group consisting of structural units represented by the following formulas B11 to B13. The photosensitive transfer member according to any one of 6 to 6.

In the formula, R b1 represents a hydrogen atom or a methyl group.
The photosensitive transfer member according to any one of claims 1 to 7, wherein the total content of the polymer X and the polymer Y is 80% by mass or more with respect to the total mass of the photosensitive resin layer. ..
The photosensitive transfer member according to any one of claims 1 to 8, which contains the polymer Y.
The photosensitive transfer member according to any one of claims 1 to 8, which contains the polymer X.
The surface of the photosensitive resin layer in the photosensitive transfer member according to any one of claims 1 to 10 opposite to the temporary support side is brought into contact with the substrate, and the photosensitive transfer member and the substrate are brought into contact with each other. And the process of pasting together
The process of pattern exposure of the photosensitive resin layer and
A method for producing a resin pattern, which comprises a step of developing the exposed photosensitive resin layer to form a resin pattern in this order.
The surface of the photosensitive resin layer in the photosensitive transfer member according to any one of claims 1 to 10 opposite to the temporary support side is brought into contact with the conductive layer in the substrate having the conductive layer. In the process of bonding the photosensitive transfer member and the substrate having the conductive layer,
The process of pattern exposure of the photosensitive resin layer and
A step of developing the exposed photosensitive resin layer to form a resin pattern, and
A method for manufacturing a circuit wiring, comprising, in this order, a step of etching the conductive layer in a region where the resin pattern is not arranged.
The surface of the photosensitive resin layer in the photosensitive transfer member according to any one of claims 1 to 10 opposite to the temporary support side is brought into contact with the conductive layer in the substrate having the conductive layer. In the process of bonding the photosensitive transfer member and the substrate having the conductive layer,
The process of pattern exposure of the photosensitive resin layer and
A step of developing the exposed photosensitive resin layer to form a resin pattern, and
A method for manufacturing a touch panel, comprising, in this order, a step of etching the conductive layer in a region where the resin pattern is not arranged.