WO2021008186A1 - 带声学阻抗失配结构的体声波谐振器、滤波器及电子设备 - Google Patents

带声学阻抗失配结构的体声波谐振器、滤波器及电子设备 Download PDF

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Publication number
WO2021008186A1
WO2021008186A1 PCT/CN2020/086556 CN2020086556W WO2021008186A1 WO 2021008186 A1 WO2021008186 A1 WO 2021008186A1 CN 2020086556 W CN2020086556 W CN 2020086556W WO 2021008186 A1 WO2021008186 A1 WO 2021008186A1
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Prior art keywords
piezoelectric layer
horizontal plane
electrode
range
top electrode
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PCT/CN2020/086556
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English (en)
French (fr)
Inventor
张孟伦
庞慰
杨清瑞
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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Tianjin University
ROFS Microsystem Tianjin Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/175—Acoustic mirrors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
    • H03H9/173—Air-gaps
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/54—Filters comprising resonators of piezoelectric or electrostrictive material

Definitions

  • the embodiments of the present invention relate to the field of semiconductors, and more particularly to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device having the filter.
  • the bulk acoustic wave filter has the advantages of low insertion loss, high rectangular coefficient, high power capacity, etc. Therefore, it is widely used in contemporary wireless communication systems and is an important component that determines the quality of radio frequency signals in and out of communication systems.
  • the performance of a BAW filter is determined by the BAW resonator that constitutes it.
  • the resonance frequency of the BAW resonator determines the working frequency of the filter
  • the effective electromechanical coupling coefficient determines the bandwidth of the filter
  • the quality factor determines the filter insertion loss.
  • the filter structure is fixed, its quality factor, especially the quality factor (or series-parallel impedance) at the series resonance frequency and parallel resonance frequency, will significantly affect the passband insertion loss. Therefore, how to improve the quality factor of the resonator is an important issue in the design of high-performance filters.
  • the quality factor (Qs) or impedance (Rs) at the series resonance frequency of the bulk acoustic wave resonator is usually determined by electrode loss and material loss, while the quality factor (Qp) or impedance (Rp) at the parallel resonance frequency of the bulk acoustic wave resonator is usually affected by Impact of boundary acoustic leakage. Therefore, when the material of the resonator and the laminated structure are determined, the improvement space of Qs (or Rs) is limited, but the boundary structure of the resonator can be changed to effectively improve the boundary leakage of the acoustic wave, thereby significantly improving the Qp (or Rs) of the resonator. Rp).
  • FIG. 10A shows a top view of a conventional resonator. If it is cut along the line A1A2 in FIG. 10A, a cross-sectional view as shown in FIG. 10B can be obtained, and if it is cut along the line A3OA4, another middle cross-sectional view in FIG. 10C can be obtained.
  • the basic structure of the resonator in Figures 10A-10C includes:
  • Substrate 10 The material can be monocrystalline silicon, gallium arsenide, sapphire, quartz, etc.
  • Acoustic mirror 20 The specific commonly used structure may be an air cavity, a Bragg reflective layer or other equivalent acoustic wave reflection structures.
  • Bottom electrode 30 The specific material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
  • Piezoelectric layer 50 a material such as aluminum nitride, zinc oxide, PZT, etc., and a rare earth element doped material with a certain atomic ratio of the above-mentioned materials can be selected.
  • Top electrode 70 the same material as the bottom electrode 30.
  • Top electrode pin 80 Usually the material is the same as the electrode 80.
  • Electrode support portion 85 Generally, the material is the same as the electrode 80.
  • the piezoelectric layer 50 can be driven only by an electric field when the electrode is basically not in contact with the piezoelectric layer (the electrode support portion 85 and the top electrode pin portion 80 are the contact portion), thereby limiting most of the acoustic energy Within the piezoelectric layer 50, the loss of acoustic energy through the electrodes is avoided.
  • the electromechanical coupling coefficient kt 2 is directly related to the electrode-piezoelectric layer thickness ratio. If this ratio is to be maintained No change, it is required that the electrode thickness and the piezoelectric layer thickness must be changed in association.
  • the addition of an air gap can basically cancel the relationship between the electrode thickness and the thickness of the piezoelectric layer, so that the electrode thickness has a good independence in the design, for example, under the premise of an air gap, the electrode thickness can be increased In order to reduce the resistance of the electrode, thereby reducing the electrical loss of the resonator without affecting the electromechanical coupling coefficient.
  • ⁇ is the angular frequency of the AC signal
  • A is the effective area of the resonator
  • d is the thickness of the piezoelectric layer.
  • the thickness of the piezoelectric layer of a resonator with an air gap is greater than that of a resonator without an air gap, so that when d increases, the resonance
  • the area A of the effective acoustic area of the filter must also be increased to ensure that Z remains unchanged.
  • the ratio of its perimeter to area becomes smaller, so that the acoustic energy loss rate becomes smaller. This is significant for resonators working at high frequencies. The meaning of reducing sound loss.
  • top electrode Usually, only support points are set in the small area of the edge of the non-connected side of the top electrode (as shown in part 85 in Figure 10A-10B).
  • the connecting end of the top electrode is supported by the electrode pins, and the rest on the non-connected side Partially form a free end (FR1 area in Figures 10A and 10C).
  • the structural feature helps to fully release the sacrificial layer material between the electrode and the piezoelectric layer during processing, so that the electrode and the piezoelectric layer are sufficiently separated.
  • the acoustic waves propagating laterally in the resonator can only encounter a limited impedance mismatch area (such as the electrode support portion 85 and the top electrode pin portion 80), and are reflected back to the effective acoustic area of the resonator (Shown as E1 in Figure 10B), and the impedance mismatch area usually formed by this type of support can only provide a very limited acoustic reflection effect; and the acoustic mismatch area in the free end FR1 area is completely missing, which will As a result, the transverse sound waves directly propagate outside the effective acoustic area (as shown by E2 in Figure 10C), and because the length enclosed by the free end FR1 area is significantly greater than the electrode support portion 85 and the top electrode pin portion 80. Therefore, the energy loss of the resonator caused by the lack of the above-mentioned acoustic mismatch area is very considerable.
  • a limited impedance mismatch area such as the electrode support portion 85 and the top electrode pin portion 80
  • the present invention proposes to build an acoustic wave reflection structure on the piezoelectric layer to overcome the problem of excessive acoustic energy loss caused by the lack of acoustic mismatch areas in the traditional structure, thereby improving the The quality factor Q of the resonator.
  • a bulk acoustic wave resonator including:
  • the bottom electrode is set above the substrate
  • the piezoelectric layer is disposed above the bottom electrode and between the bottom electrode and the top electrode;
  • the electrode support part at least forms a gap between the piezoelectric layer and the top electrode
  • the overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator constitutes the effective area of the resonator;
  • the resonator is provided with an acoustic impedance mismatch structure.
  • the thickness of the gap is in the range of 1-500 nm.
  • the acoustic impedance mismatch structure is arranged around the entire free edge of the top electrode.
  • the acoustic impedance mismatch structure is arranged around the entire edge of the top electrode.
  • the acoustic impedance mismatch structure includes a recess provided in the piezoelectric layer. Further optionally, the recessed portion is provided on the upper surface of the piezoelectric layer; or the recessed portion is provided on the lower surface of the piezoelectric layer.
  • the width of the concave portion is D1, the depth is H1, and the distance between the inner edge of the concave portion and the edge of the top electrode is D2, where: the range of D1 is 0.5-10 ⁇ m; the range of H1 is 0.1-1 ⁇ m; the range of D2 is -10 -10 ⁇ m.
  • the electrode support portion between the top electrode and the piezoelectric layer at least partially overlaps the recessed portion.
  • the recess is filled with a dielectric material.
  • the piezoelectric layer has a plurality of piezoelectric layer radial protrusions corresponding to the electrode support portion, and there are gaps between the adjacent piezoelectric layer radial protrusions.
  • the part of the bottom electrode corresponding to the gap is directly exposed; the acoustic impedance mismatch structure includes the gap.
  • the acoustic impedance mismatch structure includes a protrusion disposed on the upper surface of the piezoelectric layer along the free edge.
  • the width D4 of the protrusion is in the range of 0.5-10 ⁇ m
  • the thickness H2 is in the range of 0.1-0.5 ⁇ m
  • the distance D5 between the inner edge of the protrusion and the side edge of the top electrode is in the range of 0.5-10 ⁇ m. .
  • the upper surface of the piezoelectric layer is provided with a piezoelectric layer concave portion with a flat bottom in an area corresponding to the effective area, and the edges of the piezoelectric layer concave portion are formed by a first horizontal plane, a second horizontal plane, and The step structure on the piezoelectric layer formed by the first inclined plane between the first horizontal plane and the second horizontal plane, the first horizontal plane is located below the second horizontal plane; the top electrode has a top electrode concave portion corresponding to the piezoelectric layer concave portion and The top electrode step structure corresponding to the step structure on the piezoelectric layer, or the top electrode has a top electrode recess corresponding to the piezoelectric layer recess; the acoustic impedance mismatch structure includes the step structure on the piezoelectric layer .
  • the height difference H3 between the first horizontal plane and the second horizontal plane ranges from 0.1 to 1 ⁇ m
  • the angle ⁇ 1 between the first inclined plane and the first horizontal plane ranges from 15 degrees to 75 degrees
  • the side edge of the top electrode is The range of the lateral distance D6 of the edge of the first horizontal plane is -10-10 ⁇ m.
  • the upper surface of the bottom electrode is provided with a bottom electrode concave portion with a flat bottom in an area corresponding to the piezoelectric layer concave portion, and the edges of the bottom electrode concave portion are defined by a third horizontal plane, a fourth horizontal plane, and a second horizontal plane.
  • the bottom electrode step structure formed by the second inclined surface between the three horizontal planes and the fourth horizontal plane, the third horizontal plane is located below the fourth horizontal plane;
  • the lower surface of the piezoelectric layer has a piezoelectric layer convex portion corresponding to the bottom electrode concave portion And a lower step structure of the piezoelectric layer corresponding to the step structure of the bottom electrode.
  • the height difference H4 between the third horizontal plane and the fourth horizontal plane is in the range of 0.1-0.5 ⁇ m
  • the included angle ⁇ 1 between the second inclined plane and the third horizontal plane is in the range of 15 degrees to 75 degrees.
  • the upper surface of the piezoelectric layer is provided with a piezoelectric layer convex portion with a flat top in an area corresponding to the effective area, and the edges of the piezoelectric layer convex portion are formed by the fifth horizontal plane and the sixth horizontal plane.
  • a horizontal plane and a third inclined surface between the fifth horizontal plane and the sixth horizontal plane constitute a stepped structure on the piezoelectric layer, the fifth horizontal plane is located below the sixth horizontal plane; the acoustic impedance mismatch structure includes the stepped structure on the piezoelectric layer.
  • the height difference H5 between the fifth horizontal plane and the sixth horizontal plane is in the range of 0.1-1 ⁇ m
  • the angle ⁇ 2 between the third inclined plane and the fifth horizontal plane is in the range of 15 degrees to 75 degrees
  • the side edge of the top electrode and the first The range of the lateral distance D7 from the edge of the five-level plane is -10-10 ⁇ m.
  • the upper surface of the bottom electrode is provided with a bottom electrode convex portion with a flat top in an area corresponding to the piezoelectric layer convex portion, and the edges of the bottom electrode convex portion are formed by the seventh horizontal plane and the eighth horizontal plane.
  • the height difference H6 between the seventh horizontal plane and the eighth horizontal plane ranges from 0.1 to 1 ⁇ m
  • the included angle ⁇ 2 between the fourth inclined surface and the seventh horizontal plane ranges from 15 degrees to 75 degrees.
  • the acoustic impedance mismatch structure includes a rotor portion arranged on the upper surface of the piezoelectric layer along the free edge.
  • the width D8 of the air cavity surrounded by the rotor part is in the range of 0.5-10 ⁇ m
  • the height H7 is in the range of 0.1-1 ⁇ m
  • the distance D9 between the air cavity and the edge of the top electrode is in the range of 0.1-10 ⁇ m
  • the included angle ⁇ 3 ranges from 15 degrees to 75 degrees.
  • a portion of the piezoelectric layer surrounding the effective area has a first doping concentration; a portion of the piezoelectric layer in the effective area has a second doping concentration different from the first doping concentration; the acoustic
  • the impedance mismatch structure includes the junction of the first doping concentration region and the second doping concentration region of the piezoelectric layer.
  • the range of the first doping concentration ⁇ 1 is 1-40% by atom
  • the range of the second doping concentration ⁇ 2 is 1-40% by atom
  • the first doping concentration ⁇ 1 and the second doping concentration ⁇ 2 The range of the doping concentration difference ⁇ is 10-30% atomic ratio.
  • the distance D10 between the boundary of the first doping concentration region and the second doping concentration region from the edge of the top electrode is in the range of -10-10 ⁇ m.
  • an auxiliary electrode is provided on the free edge side of the top electrode, and the auxiliary electrode is spaced apart from the top electrode in a radial direction, and the alternating potential of the auxiliary electrode is opposite to the alternating potential of the top electrode.
  • the range D11 between the auxiliary electrode and the top electrode is 0.1-5um.
  • the width D12 of the auxiliary electrode ranges from 1 to 10 um.
  • gaps are provided between the piezoelectric layer and the top electrode, and between the piezoelectric layer and the bottom electrode.
  • a filter including the above-mentioned bulk acoustic wave resonator.
  • an electronic device including the above-mentioned filter or bulk acoustic wave resonator.
  • Fig. 1 is a schematic top view of a bulk acoustic wave resonator according to the present invention
  • FIG. 2A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A3-O-A4 in FIG. 1, showing a recessed reflection structure;
  • Fig. 2B is an exemplary partial enlarged schematic diagram of the ROI part in Fig. 2A;
  • FIG. 2C is an exemplary partial enlarged schematic diagram of the ROI part in FIG. 2A;
  • Fig. 2D is an exemplary partial enlarged schematic diagram of the ROI part in Fig. 2A;
  • 3A is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • 3B is a schematic partial cross-sectional view of the bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A3-O-A4 in FIG. 3A;
  • Fig. 3C is an exemplary partial enlarged schematic diagram of the ROI part in Fig. 3B;
  • 3D is a schematic partial cross-sectional view of the bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A1-A2 in FIG. 3A;
  • FIG. 4A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A3-O-A4 in FIG. 1;
  • Fig. 4B is an exemplary partial enlarged schematic diagram of the ROI part in Fig. 4A;
  • 5A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A3-O-A4 in FIG. 1;
  • FIG. 5B is an exemplary partial enlarged schematic diagram of ROI1 in FIG. 5A;
  • 5C is an exemplary partial enlarged schematic diagram of the ROI1 part in FIG. 5A;
  • 5D is an exemplary partial enlarged schematic diagram of the ROI2 part in FIG. 5A;
  • 6A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A3-O-A4 in FIG. 1;
  • Fig. 6B is an exemplary partial enlarged schematic diagram of the ROI1 part in Fig. 6A;
  • FIG. 6C is an exemplary partial enlarged schematic diagram of the ROI1 part in FIG. 6A;
  • Fig. 6D is an exemplary partial enlarged schematic diagram of the ROI2 part in Fig. 6A;
  • Fig. 7A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A3-O-A4 in Fig. 1;
  • FIG. 7B is an exemplary partial enlarged schematic diagram of the ROI part in FIG. 7A;
  • FIG. 8A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A3-O-A4 in FIG. 1;
  • FIG. 8B is an exemplary partial enlarged schematic diagram of the ROI part in FIG. 8A;
  • Fig. 9A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A3-O-A4 in Fig. 1;
  • FIG. 9B is an exemplary partial enlarged schematic diagram of the ROI part in FIG. 9A;
  • 10A is a schematic top view of a bulk acoustic wave resonator in the prior art
  • FIG. 10B is a schematic cross-sectional view taken along A1-A2 in FIG. 10A;
  • Fig. 10C is a schematic cross-sectional view taken along A3-O-A4 in Fig. 10A.
  • Fig. 1 is a schematic top view of a bulk acoustic wave resonator according to the present invention.
  • an acoustic reflection structure W1 is built on the piezoelectric layer near the free edge of the top electrode.
  • the structure can also extend to the non-free edge region (including the support portion 85 and The area of the electrode pin 80), in which the structures W1 and W2 shown in Fig. 1 are only abstract representations, which can include a variety of specific structures, such as changes in geometry or materials, and the relationship between the size and the position of the top electrode. Changes within the scope.
  • FIGS. 2A-2D The embodiment A100 will be described below with reference to FIGS. 2A-2D.
  • 2A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along A3-O-A4 in FIG. 1, showing a recessed reflection structure;
  • FIG. 2B is a diagram in FIG. 2A An exemplary partial enlarged schematic diagram of the ROI part;
  • FIG. 2C is an exemplary partial enlarged schematic diagram of the ROI part in FIG. 2A;
  • FIG. 2D is an exemplary partial enlarged schematic diagram of the ROI part in FIG. 2A.
  • a groove-type acoustic wave reflection structure is adopted, and a concave structure is formed on the surface of the piezoelectric layer near the free edge of the top electrode.
  • the recessed structure forms an acoustic impedance mismatch area in the piezoelectric layer, so that sound waves propagating laterally outward from the effective area can be reflected back to the effective area.
  • Figure 2B shows the key size details of the ROI in Figure 2A, where the width of the recessed structure is D1, the depth is H1, and the distance between the inner edge of the recessed structure and the edge of the top electrode is D2.
  • the range of D1 is 0.5-10 ⁇ m; the range of H1 is 0.1-1 ⁇ m; the range of D2 is -10-10 ⁇ m, where a negative value indicates that the inner edge of the recess is located inside the edge of the top electrode, a value of 0 indicates that it is basically aligned, and a positive value indicates that it is located outside.
  • the ranges of D1, D2, and H1 may be other values such as the middle value of the range in addition to the aforementioned endpoint values.
  • the effective area of the resonator is mainly related to the reflective structure.
  • the effective area of the resonator also expands.
  • the perimeter-to-area ratio will decrease.
  • the acoustic energy loss of the resonator can be reduced.
  • the electromechanical coupling coefficient of a resonator is directly related to the effective area of the resonator, changing the effective area is also an effective means to adjust the electromechanical coupling coefficient of the resonator. This is important when multiple resonators form electronic devices (such as filters). significance.
  • the recessed reflective structure 55 is completely located under the top electrode support portion 85.
  • the recessed reflective structure is partially located below the top electrode support portion 85.
  • a dielectric material such as silicon dioxide can be used to fill the recessed reflective structure 55.
  • Substrate 10 The material can be monocrystalline silicon, gallium arsenide, sapphire, quartz, etc.
  • Acoustic mirror 20 The specific commonly used structure may be an air cavity, a Bragg reflective layer or other equivalent acoustic wave reflection structures.
  • Bottom electrode 30 The specific material can be molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a combination of the above metals or their alloys.
  • Piezoelectric layer 50 aluminum nitride, zinc oxide, PZT and other materials can be selected.
  • Top electrode 70 the same material as the bottom electrode 30.
  • 40 and 60 are the air gap between the piezoelectric layer and the electrode, and the thickness ranges from 1 to 500 nm.
  • FIGS. 3A-3D are schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention
  • FIG. 3B is a view of the bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A3-O-A4 in FIG. 3A
  • Fig. 3C is an exemplary partial enlarged schematic view of the ROI part in Fig. 3B
  • Fig. 3D is a bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along A1-A2 in Fig. 3A Schematic partial cross-sectional view.
  • the structure of the embodiment A200 shown in FIG. 3B can be obtained. Since the piezoelectric layer-air interface forms a strong acoustic impedance mismatch, the structure can further improve the reflection effect of sound waves. However, in order to ensure the stability of the structure, it is still necessary to reserve part of the piezoelectric layer outside the above boundary to support the top electrode and the piezoelectric layer itself (as shown in Figure 3B).
  • the top electrode 70 in Figure 3A is The piezoelectric layer outside the boundary with the electrode pin 80 has been removed, exposing the bottom electrode 30 and the substrate 10 originally located under the piezoelectric layer. However, a part of the piezoelectric layer 50 is still reserved under the top electrode support portion 85 and the top electrode pin 80 to support the top electrode and the piezoelectric layer itself.
  • Figure 3C depicts the key size details of the ROI area in Figures 3A-3B.
  • the lateral distance D3 between the side edge of the piezoelectric layer and the edge of the top electrode is in the range of -10-10 ⁇ m, where a negative value represents the piezoelectric layer in Figure 3C.
  • the side edge is located on the left (inside) of the electrode edge, a positive value means it is on the right (outside), and a value of 0 means that it is basically aligned.
  • the value of D3 can also be the median value of the range.
  • 3D is a cross-sectional view of the embodiment A200 taken along the line A1-A2 in FIG. 3A (showing the piezoelectric layer 50 and the top electrode support portion 85).
  • FIG. 4A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along A3-O-A4 in FIG. 1;
  • FIG. 4B is an exemplary partial enlarged schematic view of the ROI part in FIG. 4A .
  • the embodiment A300 of FIG. 4A adopts a protruding acoustic wave reflection structure.
  • Protrusions 56 are formed on the surface of the piezoelectric layer near the free edge of the top electrode (this structure is not suitable for construction near the top electrode support portion) to form an acoustic impedance mismatch area to achieve the purpose of reflecting sound waves.
  • the convex structure in the embodiment A300 is located outside the acoustic-electric coupling region of the piezoelectric layer, so that the generation of clutter can be avoided or reduced.
  • the material of the protrusion structure 56 can be the same material as the piezoelectric layer 50, and can also be silicon dioxide, silicon nitride, silicon carbide, or other metal oxides, such as aluminum oxide.
  • Figure 4B depicts the key size details in the ROI area of embodiment A300, wherein the width of the protrusion 56 is in the range of D4 0.5-10 ⁇ m, the thickness of the H2 range is 0.1-0.5 ⁇ m, and the distance between the inner edge of the protrusion and the side edge of the top electrode is D5
  • the range is 0.5-10 ⁇ m.
  • the range of D4, D5, and H2 may be other values such as the middle value of the range in addition to the aforementioned endpoint values.
  • FIG. 5A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along A3-O-A4 in FIG. 1;
  • FIG. 5B is an exemplary partial enlarged view of ROI1 in FIG. 5A Schematic diagram;
  • FIG. 5C is an exemplary partial enlarged schematic diagram of the ROI1 part in FIG. 5A;
  • FIG. 5D is an exemplary partial enlarged schematic diagram of the ROI2 part in FIG. 5A.
  • a recessed structure is formed on the bottom electrode 30, so that the piezoelectric layer and the top electrode located above form a similar undulating structure, thereby constructing an acoustic impedance mismatch area.
  • the undulating structure is composed of a first horizontal part at the center, a second horizontal part at the periphery, and an inclined surface connecting the two horizontal planes, and the first horizontal part is lower than the second horizontal part.
  • the horizontal portion is embodied as a horizontal plane, which is perpendicular to the thickness direction of the resonator.
  • Figures 5B-5C describe the key size details in the ROI1 area of A400.
  • the difference between the two horizontal tribes is H3, the range is 0.1-1 ⁇ m, the angle between the inclined connecting part and the horizontal direction is ⁇ 1, the range is 15 degrees -75 degrees, the lateral distance between the side edge of the top electrode and the edge of the first horizontal part is D6, the range is -10 -10 ⁇ m, where a positive value indicates that the electrode edge is located outside the edge of the horizontal part, and a negative value indicates that it is located inside; in addition, when the negative value is taken, the shape of the top electrode is shown in Fig. 5C and no longer has an undulating structure.
  • Figure 5D describes the key size details in the ROI2 area of A400.
  • the difference between the two horizontal tribes is H4, the range is 0.1-0.5 ⁇ m, the angle between the inclined connecting part and the horizontal direction is ⁇ 1, and the range is 15°-75°.
  • the above values can all be end values, mid-range values or other values.
  • FIGS. 6A-6D The embodiment A500 is described below with reference to FIGS. 6A-6D.
  • 6A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention, taken along A3-O-A4 in FIG. 1;
  • FIG. 6B is an exemplary partial enlarged view of ROI1 in FIG. 6A Schematic diagram;
  • Fig. 6C is an exemplary partial enlarged schematic diagram of the ROI1 part in Fig. 6A;
  • Fig. 6D is an exemplary partial enlarged schematic diagram of the ROI2 part in Fig. 6A.
  • a protruding structure is formed on the bottom electrode 30, so that the piezoelectric layer and the top electrode located above form a similar undulating structure, thereby constructing an acoustic impedance mismatch area.
  • the undulating structure is composed of a first horizontal part at the center, a second horizontal part at the periphery, and an inclined surface connecting the two horizontal planes, and the first horizontal part is higher than the second horizontal part.
  • Figures 6B-6C describe the key size details in the ROI1 area of the A500.
  • the difference between the two horizontal parts is H5, the range is 0.1-1 ⁇ m, the angle between the inclined connecting part and the horizontal direction is ⁇ 2, and the range is 15 degrees -75 degrees.
  • the lateral distance between the side edge of the top electrode and the edge of the first horizontal part is D7, and the range is -10 -10 ⁇ m, where a positive value indicates that the electrode edge is located outside the edge of the horizontal part, and a negative value indicates that it is located inside; in addition, when the positive value is taken, the shape of the top electrode is shown in Figure 6C and no longer has an undulating structure.
  • Figure 6D describes the key size details in the ROI2 area of the A500.
  • the difference between the two horizontal tribes is H6, the range is 0.1-1 ⁇ m, the angle between the inclined connecting part and the horizontal direction is ⁇ 2, and the range is 15-75 degrees.
  • the above values can all be end values, mid-range values or other values.
  • FIG. 7A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along A3-O-A4 in FIG. 1;
  • FIG. 7B is an exemplary partial enlarged schematic diagram of the ROI part in FIG. 7A .
  • a suspended wing structure is formed on the upper surface of the piezoelectric layer near the free edge of the top electrode (this structure is not suitable for placement near the top electrode support portion), and acoustic waves are reflected therefrom.
  • Figure 7B describes the key size details in the ROI1 area of the A600.
  • the thickness of the suspended wing material is The width D8 of the air cavity surrounded by the suspended wings ranges from 0.5 to 10 ⁇ m, the height H7 ranges from 0.1 to 1 ⁇ m, and the distance from the air cavity to the edge of the top electrode D9 ranges from 0.1 to 10 ⁇ m.
  • the angle ⁇ 3 between the rotor and the horizontal plane ranges from 15 degrees to 75 degrees.
  • the material of the suspension can be the same as the piezoelectric layer, or other dielectric materials such as silicon dioxide, silicon nitride, silicon carbide, metal oxide, such as alumina, etc., can also be selected from the top electrode. Choose from metal materials.
  • the above values can all be end values, mid-range values or other values.
  • FIG. 8A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along A3-O-A4 in FIG. 1;
  • FIG. 8B is an exemplary partial enlarged schematic view of the ROI part in FIG. 8A .
  • the piezoelectric layer 50 of the embodiment A700 of FIG. 8A includes rare earth element doped regions 51 and 52 with different concentrations, and the interface between the regions 51 and 52 is located near the edge of the top electrode. Acoustic impedance mismatch is formed by the difference in doping concentration, thereby reflecting sound waves.
  • the region 51 has a first doping concentration ⁇ 1 in the range of 1-40% atomic ratio
  • the region 52 has a second doping concentration ⁇ 2 in the range 1-40% atomic ratio
  • the doping concentration difference between 51 and 52 is in the range of ⁇ 10- 30% atomic ratio.
  • the doping element may be a rare earth element, such as scandium, yttrium, lanthanum, erbium, and ytterbium.
  • Figure 8B describes the key size details in the ROI1 area of A700.
  • the distance between the interface of the two doped regions and the edge of the top electrode is D10, ranging from -10 to 10 ⁇ m.
  • a positive value indicates that the interface is located outside the edge of the top electrode, a negative value indicates that it is located inside, and a value of 0 indicates that it is basically aligned.
  • the above values can all be end values, mid-range values or other values.
  • Fig. 9A is a schematic partial cross-sectional view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention taken along A3-O-A4 in Fig. 1;
  • Fig. 9B is an exemplary partial enlarged schematic diagram of the ROI part in Fig. 9A .
  • the electric field can also be jumped near the edge of the effective area to form an acoustic mismatch area to reflect sound waves.
  • auxiliary electrodes 75 are added near both sides of the top electrode 70.
  • the alternating potential on 75 is kept in phase with the alternating potential on 70 at all times. Therefore, the electric fields 75 and 70 applied to the piezoelectric layer 50 are reversed at all times, so that an area with opposite vibration directions is formed in the piezoelectric layer, that is, an acoustic mismatch area is formed (as shown in FIG. 9B).
  • Fig. 9B illustrates the key dimensions in the ROI area of the embodiment A800.
  • the gap width D11 ranges from 0.1 -5um.
  • the width D12 of the electrode 75 is in the range of 1-10um.
  • the above values can all be end values, mid-range values or other values.
  • the edge area between the top electrode support portion 85 or the support portion 85 and the electrode pin 80 is the free edge of the top electrode.
  • the present invention is not limited to this, and a special support part may not be provided, but the top electrode pin serves as the support part at the same time.
  • the free edge of the top electrode is the part of the edge of the top electrode between the two sides of the electrode pin.
  • gaps are provided on both sides of the piezoelectric layer.
  • the gaps can also be provided only on the upper side of the piezoelectric layer, which also falls within the protection scope of the present invention.
  • the present invention proposes a bulk acoustic wave resonator, including:
  • the bottom electrode is set above the substrate
  • the piezoelectric layer is disposed above the bottom electrode and between the bottom electrode and the top electrode;
  • the electrode support part at least forms a gap between the piezoelectric layer and the top electrode
  • the overlapping area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the resonator constitutes the effective area of the resonator;
  • the resonator is provided with an acoustic impedance mismatch structure.
  • the present invention also provides a filter including a plurality of the above-mentioned bulk acoustic wave resonators.
  • the present invention also provides an electronic device including the above-mentioned filter or the above-mentioned bulk acoustic wave resonator.

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Abstract

一种体声波谐振器，包括：基底（10）；声学镜（20）；底电极（30），设置在基底（10）上方；顶电极（70）；压电层（50），设置在底电极（30）上方以及底电极（30）与顶电极（70）之间；和电极支撑部（85），至少在压电层（50）与顶电极（70）之间形成间隙，其中：所述声学镜（20）、底电极（30）、压电层（50）和顶电极（70）在谐振器厚度方向上的重叠区域构成谐振器的有效区域；沿所述顶电极（70）的自由边缘的至少一部分，所述谐振器设置有声学阻抗失配结构。还涉及一种滤波器，以及一种具有该滤波器的电子设备。

Description

带声学阻抗失配结构的体声波谐振器、滤波器及电子设备 技术领域
本发明的实施例涉及半导体领域，尤其涉及一种体声波谐振器，一种具有该谐振器的滤波器，以及一种具有该滤波器的电子设备。
背景技术
体声波滤波器具有低插入损耗、高矩形系数、高功率容量等优点，因此，被广泛应用在当代无线通讯系统中，是决定射频信号进出通讯系统质量的重要元器件。体声波滤波器的性能由构成它的体声波谐振器决定，如：体声波谐振器的谐振频率决定了滤波器的工作频率，有效机电耦合系数决定了滤波器的带宽，品质因数决定滤波器插入损耗。当滤波器结构一定时，其品质因数，特别是在串联谐振频率和并联谐振频率处的品质因数(或串并联阻抗)，会显著影响通带插入损耗。因此，如何提高谐振器的品质因数是高性能滤波器设计的一个重要问题。
体声波谐振器串联谐振频率处的品质因数(Qs)或阻抗(Rs)通常由电极损耗及材料损耗决定，而体声波谐振器并联谐振频率处的品质因数(Qp)或阻抗(Rp)通常受边界声波泄露影响。因此，当谐振器材料、及层叠结构确定时，Qs(或Rs)的提升空间有限，但可以通过改变谐振器的边界结构来有效改善声波的边界泄露情况，从而显著提高谐振器的Qp(或Rp)。
图10A所示为一种传统谐振器的俯视图，若沿图10A中直线A1A2剖开，可以得到如图10B中的剖视图，若沿线段A3OA4剖开则可得到图10C中的另一中剖视图。
图10A-10C中谐振器的基本结构包含：
基底10：材料可选单晶硅，砷化镓，蓝宝石，石英等等。
声学镜20：具体常用结构可以是空气腔、布拉格反射层或者其它等效声波反射结构。
底电极30：具体材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金。
压电层50：可选氮化铝，氧化锌，PZT等材料并包含上述材料的一定原子比的稀土元素掺杂材料。
顶电极70：材料同底电极30。
顶电极引脚部80：通常材料和电极80相同。
电极支撑部85：通常材料和电极80相同。
通常在顶电极表面存在防止电极氧化的钝化层和用以调节谐振器工作频率的质量负载层等结构，图中并未示出。
此外，如图所示，在压电层50和底电极30及顶电极70之间还具有空气间隙层40和60。
上述空气间隙存在的意义在于：
(1)可以使电极在基本不接触(电极支撑部85和顶电极引脚部80为接触部分)压电层的 情况下，仅通过电场来驱动压电层50，从而将大部分声学能量限制在压电层50之内，避免了声学能量通过电极发生损耗。
(2)对于电极和压电层紧密贴合(不存在空气间隙层40和60)的谐振器来说，其机电耦合系数kt 2和电极-压电层厚度比值直接相关，若要保持该比值不变，则要求电极厚度和压电层厚度必须关联变化。而加入空气间隙则可基本上解除电极厚度和压电层厚度之间的关联，从而在设计上使电极厚度具有很好的独立性，例如，在有空气间隙的前提下，可通过增加电极厚度以减小电极的电阻，从而降低谐振器的电损耗而不影响机电耦合系数。
(3)如果将谐振器近似看作是工作在交流电信号驱动下的静态电容器，则其阻抗Z由下式决定：
Figure PCTCN2020086556-appb-000001
其中j是虚数单位，ω是交流信号的角频率，A是谐振器的有效区域的面积，d是压电层厚度。在给定激励角频率ω和阻抗Z＝50Ω前提条件下，具有空气间隙的谐振器的压电层的厚度要大于没有空气间隙的谐振器的压电层厚度，这样当d增大时，谐振器有效声学区域的面积A也要增大，才可保证Z不变。对于形状发生相似变化的谐振器来说，当其面积变大时，其周长-面积的比值则变小，从而使声波能量损失率变小，这对工作在高频下的谐振器具有显著的减少声损耗的意义。
而传统的具有空气间隙的谐振器的结构特点及其作用是：
通常只在顶电极非连接侧的边缘较小的区域内设置支撑点(如图10A-10B中的部分85)，在顶电极连接端则依靠电极引脚形成支撑，而在非连接边其余的部分形成自由端(如图10A和10C的FR1区域)。所述结构特点有助于在加工中充分释放位于电极和压电层之间的牺牲层材料，使电极和压电层分离充分。
上述结构特点导致传统带空气间隙的谐振器具有下述缺点：
由于电极支撑区域有限，使得谐振器中横向传播的声波只能遇到有限的阻抗不匹配的区域(如电极支撑部85和顶电极引脚部80处)，而被反射回谐振器有效声学区域(如图10B中的E1所示)，并且通常由该类支撑部形成的阻抗失配区域也只能提供非常有限的声波反射效果；而在自由端FR1区域声学失配区域完全缺失，这会导致横向声波直接传播到有效声学区域之外(如图10C中的E2所示)，而又由于自由端FR1区域所包围的长度要显著大于电极支撑部85及顶电极引脚部80所包围的长度，因此上述声学失配区域的缺失造成的谐振器能量损耗非常可观。
发明内容
针对传统空气间隙型谐振器的上述缺点，本发明提出在压电层上构建声波反射结构，以此克服传统结构中声学失配区域的缺失带来的声波能量损耗过高的问题，从而提高所述谐振器的品质因数Q。
根据本发明的实施例的一个方面，提出了体声波谐振器，包括：
基底；
声学镜；
底电极，设置在基底上方；
顶电极；
压电层，设置在底电极上方以及底电极与顶电极之间；和
电极支撑部，至少在压电层与顶电极之间形成间隙，
其中：
所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；
沿所述顶电极的自由边缘的至少一部分，所述谐振器设置有声学阻抗失配结构。
可选的，所述间隙的厚度在1-500nm的范围内。
可选的，所述声学阻抗失配结构围绕所述顶电极的整个自由边缘设置。
进一步可选的，所述声学阻抗失配结构围绕所述顶电极的整个边缘设置。
可选的，所述声学阻抗失配结构包括设置于压电层中的凹陷部。进一步可选的，所述凹陷部设置于压电层的上表面；或者所述凹陷部设置于压电层的下表面。
可选的，所述凹陷部的宽度为D1，深度为H1，凹陷部内边缘距离顶电极边缘的距离为D2，其中：D1的范围为0.5-10μm；H1范围为0.1-1μm；D2范围-10-10μm。进一步可选的，在谐振器的厚度方向上，在顶电极与压电层之间的电极支撑部至少部分与所述凹陷部重叠。可选的，所述凹陷部内填充有介电材料。
可选的，所述压电层具有与所述电极支撑部对应的多个压电层径向突出部，相邻压电层径向突出部之间具有空隙，在所述谐振器的俯视图中，所述底电极与所述空隙对应的部位直接露出；所述声学阻抗失配结构包括所述空隙。
可选的，所述声学阻抗失配结构包括沿所述自由边缘设置于压电层上表面的凸起部。进一步可选的，所述凸起部的宽度D4的范围为0.5-10μm，厚度H2的范围为0.1-0.5μm，凸起部的内边缘和顶电极侧边缘的距离D5的范围为0.5-10μm。
可选的，所述压电层的上表面在与所述有效区域对应的区域内设置有底部平坦的压电层凹部，所述压电层凹部的边缘为由第一水平面、第二水平面以及第一水平面和第二水平面之间的第一斜面构成的压电层上台阶结构，第一水平面位于第二水平面下方；所述顶电极具有与所述压电层凹部对应的顶电极凹部以及与所述压电层上台阶结构对应的顶电极台阶结构，或者所述顶电极具有与所述压电层凹部对应的顶电极凹部；所述声学阻抗失配结构包括所述压电层上台阶结构。进一步可选的，第一水平面与第二水平面之间的高度差H3的范围为0.1-1μm，第一斜面与第一水平面的夹角α1的范围为15度-75度，顶电极侧边缘与第一水平面边沿的横向距离D6的范围为-10-10μm。
可选的，所述底电极的上表面在与所述压电层凹部对应的区域内设置有底部平坦的底电极凹部，所述底电极凹部的边缘为由第三水平面、第四水平面以及第三水平面与第四水平面之间的第二斜面构成的底电极台阶结构，第三水平面位于第四水平面下方；所述压电层的下表面具有与所述底电极凹部对应的压电层凸部以及与所述底电极台阶结构对应的压电层下台阶结构。可选的，第三水平面与第四水平面的高度差H4的范围为0.1-0.5μm，第二斜面与第三水平面的夹角β1的范围为15度-75度。
可选的，所述压电层的上表面在与所述有效区域对应的区域内设置有顶部平坦的压电层凸部，所述压电层凸部的边缘为由第五水平面、第六水平面以及第五水平面和第六水平面之间的第三斜面构成的压电层上台阶结构，第五水平面位于第六水平面下方；所述声学阻抗失配结构包括所述 压电层上台阶结构。
可选的，第五水平面与第六水平面之间的高度差H5的范围为0.1-1μm，第三斜面与第五水平面的夹角α2的范围为15度-75度，顶电极侧边缘与第五水平面边沿的横向距离D7的范围为-10-10μm。
可选的，所述底电极的上表面在与所述压电层凸部对应的区域内设置有顶部平坦的底电极凸部，所述底电极凸部的边缘为由第七水平面、第八水平面以及第七水平面与第八水平面之间的第四斜面构成的底电极台阶结构，第七水平面位于第八水平面下方；所述压电层的下表面具有与所述底电极台阶结构对应的压电层凹部以及与所述底电极台阶结构对应的压电层下台阶结构。
可选的，第七水平面与第八水平面的高度差H6的范围为0.1-1μm，第四斜面与第七水平面的夹角β2的范围为15度-75度。
可选的，所述声学阻抗失配结构包括沿所述自由边缘设置于压电层上表面的旋翼部。进一步可选的，所述旋翼部包围的空气腔宽度D8的范围为0.5-10μm，高度H7的范围为0.1-1μm，空气腔距离顶电极边缘的距离D9的范围为0.1-10μm，旋翼与水平面的夹角α3的范围为15度-75度。
可选的，所述压电层围绕有效区域的部分具有第一掺杂浓度；所述压电层在有效区域内的部分具有不同于第一掺杂浓度的第二掺杂浓度；所述声学阻抗失配结构包括压电层的第一掺杂浓度区域与第二掺杂浓度区域相接部。
可选的，第一掺杂浓度η1的范围为1-40％原子比，第二掺杂浓度η2的范围为1-40％原子比，且第一掺杂浓度η1与第二掺杂浓度η2的掺杂浓度差异δη的范围为10-30％原子比。
可选的，第一掺杂浓度区域与第二掺杂浓度区域的边界距离顶电极边缘距离D10的范围为-10-10μm。
可选的，顶电极的自由边缘侧设置有辅助电极，所述辅助电极与顶电极在径向方向上间隔开，且辅助电极的交变电位与顶电极的交变电位反相。
可选的，辅助电极与顶电极之间的间隔D11的范围为0.1-5um。
可选的，所述辅助电极的宽度D12的范围为1-10um。
可选的，压电层与顶电极之间，以及压电层与底电极之间均设置有间隙。
根据本发明的实施例的另一方面，提出了一种滤波器，包括上述的体声波谐振器。
根据本发明的实施例的还一方面，提出了一种电子设备，包括上述的滤波器或者体声波谐振器。
附图说明
以下描述与附图可以更好地帮助理解本发明所公布的各种实施例中的这些和其他特点、优点，图中相同的附图标记始终表示相同的部件，其中：
图1为根据本发明的体声波谐振器的俯视示意图；
图2A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图，其中示出了凹陷反射结构；
图2B为图2A中ROI部分的示例性局部放大示意图；
图2C为图2A中ROI部分的示例性局部放大示意图；
图2D为图2A中ROI部分的示例性局部放大示意图；
图3A为根据本发明的示例性实施例的体声波谐振器的俯视示意图；
图3B为根据本发明的一个示例性实施例的体声波谐振器的沿图3A中的A3-O-A4截得的示意性局部剖视图；
图3C为图3B中ROI部分的示例性局部放大示意图；
图3D为根据本发明的一个示例性实施例的体声波谐振器的沿图3A中的A1-A2截得的示意性局部剖视图；
图4A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；
图4B为图4A中ROI部分的示例性局部放大示意图；
图5A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；
图5B为图5A中ROI1部分的示例性的局部放大示意图；
图5C为图5A中ROI1部分的示例性的局部放大示意图；
图5D为图5A中ROI2部分的示例性的局部放大示意图；
图6A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；
图6B为图6A中ROI1部分的示例性的局部放大示意图；
图6C为图6A中ROI1部分的示例性的局部放大示意图；
图6D为图6A中ROI2部分的示例性的局部放大示意图；
图7A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；
图7B为图7A中ROI部分的示例性局部放大示意图；
图8A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；
图8B为图8A中ROI部分的示例性局部放大示意图；
图9A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；
图9B为图9A中ROI部分的示例性局部放大示意图；
图10A为现有技术中的体声波谐振器的俯视示意图；
图10B为沿图10A中的A1-A2截得的示意性剖视图；
图10C为沿图10A中的A3-O-A4截得的示意性剖视图。
具体实施方式
下面通过实施例，并结合附图，对本发明的技术方案作进一步具体的说明。下述参照附图对本发明实施方式的说明旨在对本发明的总体发明构思进行解释，而不应当理解为对本发明的一种限制。
下面参照图描述根据本发明的体声波谐振器。需要指出的是，在本发明的实施例中，虽然以薄膜体声波谐振器为例进行说明，这些说明均可以适用于其他类型的体声波谐振器。
下面参照图1总体描述本发明。图1为根据本发明的体声波谐振器的俯视示意图。如图1所示，在顶电极自由边附近的压电层上构建声学反射结构W1，可选的，该结构也可如图1中线W2所示延伸至非自由边区域(包含支撑部85和电极引脚80的区域)，其中图1所示结构W1和W2仅为抽象表示，其可包含多种具体结构，如几何形态变化或材料变化，其尺寸和顶电极的位置关系也可在一定范围内变化。
下面参照附图2A-2D描述实施例A100。图2A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图，其中示出了凹陷反射结构；图2B为图2A中ROI部分的示例性局部放大示意图；图2C为图2A中ROI部分的示例性局部放大示意图；图2D为图2A中ROI部分的示例性局部放大示意图。
如图2A-2D所示，在实施例100A中，采用了凹槽式的声波反射结构，通过在顶电极自由边附近的压电层表面形成凹陷结构。所述凹陷结构在压电层中形成声学阻抗失配区域，从而可将由有效区域横向向外传播的声波反射回有效区。
图2B显示了图2A中ROI区域的关键尺寸细节，其中凹陷结构的宽度为D1，深度为H1，凹陷结构内边缘距离顶电极边缘的距离为D2。D1的范围为0.5-10μm；H1范围为0.1-1μm；D2范围-10-10μm,其中负值表示凹陷内边缘位于顶电极边缘内侧，0值表示基本对齐，正值表示位于外侧。D1，D2和H1的范围除了上述的端点值之外，还可以是范围的中值等其他值。
此外，由于实施例A100中电极与压电层不再接触，因此谐振器的有效区域主要与反射结构有关，当反射结构远离顶电极向外移动时，谐振器的有效面积也随之扩大。当谐振器面积扩大时，周长面积比会缩小，在一定范围内，可使谐振器的声波能量损耗减小。此外由于谐振器的机电耦合系数与谐振器的有效面积直接相关，因此改变有效面积也是调节谐振器机电耦合系数的有效手段，这在多个谐振器构成电子器件(如滤波器等)时有重要意义。
在图2C中，凹陷反射结构55完全位于顶电极支撑部85下方。
在图2D中，凹陷反射结构部分位于顶电极支撑部85下方，此时为增强顶电极支撑部85稳定性，可选用介电材料如二氧化硅等对凹陷反射结构55进行填充。
以下对实施例A100各部分结构及材料说明如下(后续实施例仅对与A100不同的特征进行说明)：
基底10：材料可选单晶硅，砷化镓，蓝宝石，石英等等。
声学镜20：具体常用结构可以是空气腔、布拉格反射层或者其它等效声波反射结构。
底电极30：具体材料可选钼、钌、金、铝、镁、钨、铜，钛、铱、锇、铬或以上金属的复合或其合金。
压电层50：可选氮化铝，氧化锌，PZT等材料。
顶电极70：材料同底电极30。
40和60为位于压电层和电极之间的空气间隙，其厚度范围1-500nm。
55：位于压电层上的凹陷结构。
下面参照附图3A-3D描述实施例A200。图3A为根据本发明的示例性实施例的体声波谐振器的俯视示意图；图3B为根据本发明的一个示例性实施例的体声波谐振器的沿图3A中的A3-O-A4截得的示意性局部剖视图；图3C为图3B中ROI部分的示例性局部放大示意图；图3D为根据本发明的一个示例性实施例的体声波谐振器的沿图3A中的A1-A2截得的示意性局部剖视图。
若去除掉实施例A100中凹陷结构55内边缘以外绝大部分的压电材料，则可得到图3B所示的实施例A200的结构。由于压电层-空气界面形成很强的声学阻抗失配，因此该结构可进一步提升对声波的反射效果。但为了确保结构的稳定性，仍需保留部分上述边界之外压电层用来支撑顶电极和压电层自身(如图3B所示)，相较图1，图3A中的位于顶电极70和电极引脚80边界之外的压电层已被去除，暴露出了原本位于压电层下方的底电极30和基底10。而在顶电极支撑部85以及顶电极引脚80的下部仍然保留了部分压电层50，以支撑顶电极和压电层自身。
此外，图3C描述了位于图3A-3B中ROI区域的关键尺寸细节，压电层侧边缘与顶电极边缘的横向距离D3的范围为-10-10μm，其中负值表示图3C中压电层侧边缘位于电极边缘左侧(内侧)，正值表示位于右侧(外侧)，0值表示基本对齐。D3的值除了上述端值之外，还可以是范围的中值等值。
图3D为实施例A200沿图3A中直线A1-A2剖开的剖视图(示出了压电层50和顶电极支撑部85)。
下面参照附图4A-4B描述实施例A300。图4A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；图4B为图4A中ROI部分的示例性局部放大示意图。
图4A的实施例A300采用了突起式的声波反射结构。通过在顶电极自由边缘附近(本结构不适于在顶电极支撑部附近构建)的压电层表面形成突起56，来形成声学阻抗失配区域，达到反射声波的目的。同时相较于传统的位于顶电极边缘表面的突起式声波反射结构，实施例A300中的凸起结构位于压电层的声电耦合区之外，因此可避免或减少杂波生成。
凸起结构56的材料可选和压电层50相同的材料，还可选二氧化硅，氮化硅，碳化硅，或其他金属氧化物，如氧化铝等。
图4B中描述了实施例A300的ROI区域中的关键尺寸细节，其中突起56的宽度为D4范围0.5-10μm，厚度为H2范围0.1-0.5μm，突起内边缘和顶电极侧边缘的距离为D5范围0.5-10μm。D4，D5和H2的范围除了上述的端点值之外，还可以是范围的中值等其他值。
下面参照附图5A-5D描述实施例A400。图5A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；图5B为图5A中ROI1部分的示例性的局部放大示意图；图5C为图5A中ROI1部分的示例性的局部放大示意图；图5D为图5A中ROI2部分的示例性的局部放大示意图。
图5A的实施例A400通过在底电极30上形成凹陷结构，使位于其上方的压电层及顶电极形成相似的起伏结构，从而构造出声学阻抗失配区域。该起伏结构由位于中心的第一水平部和位于周边的第二水平部以及连接所述两部分水平面的倾斜面组成，且第一水平部低于第二水平部。
在本发明中，水平部体现为水平面，该水平面与谐振器的厚度方向垂直。
图5B-5C描述了A400的ROI1区域内的关键尺寸细节。其中两水平部落差为H3，范围0.1-1μm，倾斜连接部与水平方向夹角为α1，范围15度-75度，顶电极侧边缘与第一水平部边沿的横向距离为D6，范围-10-10μm，其中正值表示电极边沿位于水平部边缘的外部，负值表示位于内部；此外，当取负值时，顶电极形状如图5C所示，不再具有起伏结构。
图5D描述了A400的ROI2区域内的关键尺寸细节。其中两水平部落差为H4，范围0.1-0.5μm，倾斜连接部与水平方向夹角为β1，范围15度-75度。
如前所述，上述数值均可以为端值以及范围中值或其他值。
下面参照附图6A-6D描述实施例A500。图6A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；图6B为图6A中ROI1部分的示例性的局部放大示意图；图6C为图6A中ROI1部分的示例性的局部放大示意图；图6D为图6A中ROI2部分的示例性的局部放大示意图。
图6A的实施例A500通过在底电极30上形成突起结构，使位于其上方的压电层及顶电极形成相似的起伏结构，从而构造出声学阻抗失配区域。该起伏结构由位于中心的第一水平部和位于周边的第二水平部以及连接所述两部分水平面的倾斜面组成，且第一水平部高于第二水平部。
图6B-6C描述了A500的ROI1区域内的关键尺寸细节。其中两水平部落差为H5，范围0.1-1μm，倾斜连接部与水平方向夹角为α2，范围15度-75度，顶电极侧边缘与第一水平部边沿的横向距离为D7，范围-10-10μm，其中正值表示电极边沿位于水平部边缘的外部，负值表示位于内部；此外，当取正值时，顶电极形状如图6C所示，不再具有起伏结构。
图6D描述了A500的ROI2区域内的关键尺寸细节。其中两水平部落差为H6，范围0.1-1μm，倾斜连接部与水平方向夹角为β2，范围15度-75度。
如前所述，上述数值均可以为端值以及范围中值或其他值。
下面参照附图7A-7B描述实施例A600。图7A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；图7B为图7A中ROI部分的示例性局部放大示意图。
图7A的实施例A600在顶电极自由边缘附近(此结构不适合放置在顶电极支撑部附近)的压电层上表面形成悬翼结构，并以此反射声波。
图7B描述了A600的ROI1区域内的关键尺寸细节。其中悬翼材料厚度为
Figure PCTCN2020086556-appb-000002
悬翼包围的空气腔宽度D8范围0.5-10μm，高度H7范围0.1-1μm，空气腔距离顶电极边缘距离D9范围0.1-10μm。旋翼与水平面的夹角α3的范围为15度-75度。
所述悬翼的材料可选和压电层相同材料，也可选其他介电材料如二氧化硅，氮化硅，碳化硅，金属氧化物，如氧化铝等，也可从顶电极的可选金属材料中选取。
如前所述，上述数值均可以为端值以及范围中值或其他值。
下面参照附图8A-8B描述实施例A700。图8A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；图8B为图8A中ROI部分的示例性局部放大示意图。
图8A的实施例A700的压电层50包含不同浓度的稀土元素掺杂区域51和52，并且区域51和52的界面位于顶电极边缘附近。通过掺杂浓度差异形成声学阻抗失配，从而对声波进行反射。
其中区域51具有第一掺杂浓度η1，范围1-40％原子比，区域52具有第二掺杂浓度η2，范围1-40％原子比，且51和52的掺杂浓度差异δη范围10-30％原子比。
掺杂元素可以为稀土元素，如钪、钇、镧、铒、镱等。
图8B描述了A700的ROI1区域内的关键尺寸细节。其中所述2个掺杂区域的界面距离顶电极边缘距离为D10，范围-10-10μm，正值表示界面位于顶电极边缘外侧，负值表示位于内侧，0值表示基本对齐。
如前所述，上述数值均可以为端值以及范围中值或其他值。
下面参照附图9A-9B描述实施例A800。图9A为根据本发明的一个示例性实施例的体声波谐振器的沿图1中的A3-O-A4截得的示意性局部剖视图；图9B为图9A中ROI部分的示例性局部放大示意图。
除了上述通过使几何尺寸或材料性质发生跃变来构建声学失配区域的实施例以外，还可以使电场在有效区域边缘附近发生跃变，来形成声学失配区域来反射声波。
在图9A-9B所示的A800实施例中，顶电极70的两侧附近加入了辅助电极75，当上述谐振器工作时，75上的交变电位时刻保持与70上的交变电位反相，从而使75和70施加在压电层50上的电场时刻反相，使压电层中形成振动方向相反的区域，即形成声学失配区域(如图9B所示)。
图9B对实施例A800的ROI区域中的关键尺寸进行了说明，其中为确保电极70和75具有各自独立的电位，必须使70和75之间具有一定的间隙，其中间隙宽度D11的范围为0.1-5um。此外电极75的宽度D12范围为1-10um。
如前所述，上述数值均可以为端值以及范围中值或其他值。
需要指出的是，在本发明图示的实施例中，以顶电极在顶电极支撑部85之间或者支撑部85与电极引脚80之间的边缘区域为顶电极的自由边缘。但是，本发明不限于此，也可以不设置专门的支撑部，而是由顶电极引脚同时作为支撑部。在由顶电极引脚同时作为电极支撑部而没有其他电极支撑部的情况下，顶电极的自由边缘为顶电极的边缘在电极引脚的两侧之间的部分。
在本发明所示的实施例中，压电层的两侧均设置有间隙，不过，间隙也可以仅仅设置在压电层的上侧，这也在本发明的保护范围之内。
基于以上，本发明提出了一种体声波谐振器，包括：
基底；
声学镜；
底电极，设置在基底上方；
顶电极；
压电层，设置在底电极上方以及底电极与顶电极之间；和
电极支撑部，至少在压电层与顶电极之间之间形成间隙，
其中：
所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；
沿所述顶电极的自由边缘的至少一部分，所述谐振器设置有声学阻抗失配结构。基于以上，本发明还提出了一种滤波器，包括多个上述的体声波谐振器。本发明还提出了一种电子设备，包括上述的滤波器或者上述的体声波谐振器。
尽管已经示出和描述了本发明的实施例，对于本领域的普通技术人员而言，可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行变化，本发明的范围由所附权利要求及其等同物限定。

Claims (31)

  1. 一种体声波谐振器，包括：
    基底；
    声学镜；
    底电极，设置在基底上方；
    顶电极；
    压电层，设置在底电极上方以及底电极与顶电极之间；和
    电极支撑部，至少在压电层与顶电极之间形成间隙，
    其中：
    所述声学镜、底电极、压电层和顶电极在谐振器厚度方向上的重叠区域构成谐振器的有效区域；
    沿所述顶电极的自由边缘的至少一部分，所述谐振器设置有声学阻抗失配结构。
  2. 根据权利要求1所述的谐振器，其中：
    所述声学阻抗失配结构围绕所述顶电极的整个自由边缘设置。
  3. 根据权利要求2所述的谐振器，其中：
    所述声学阻抗失配结构围绕所述顶电极的整个边缘设置。
  4. 根据权利要求1-3中任一项所述的谐振器，其中：
    所述声学阻抗失配结构包括设置于压电层中的凹陷部。
  5. 根据权利要求4所述的谐振器，其中：
    所述凹陷部设置于压电层的上表面；或者
    所述凹陷部设置于压电层的下表面。
  6. 根据权利要求4所述的谐振器，其中：
    所述凹陷部设置于压电层的上表面；且
    所述凹陷部的宽度为D1，深度为H1，凹陷部内边缘距离顶电极边缘的距离为D2，其中：D1的范围为0.5-10μm；H1范围为0.1-1μm；D2范围-10-10μm。
  7. 根据权利要求6所述的谐振器，其中：
    在谐振器的厚度方向上，在顶电极与压电层之间的电极支撑部至少部分与所述凹陷部重叠。
  8. 根据权利要求7所述的谐振器，其中：
    所述凹陷部内填充有介电材料。
  9. 根据权利要求1-3中任一项所述的谐振器，其中：
    所述压电层具有与所述电极支撑部对应的多个压电层径向突出部，相邻压电层径向突出部之间具有空隙，在所述谐振器的俯视图中，所述底电极与所述空隙对应的部位直接露出；
    所述声学阻抗失配结构包括所述空隙。
  10. 根据权利要求1或2所述的谐振器，其中：
    所述声学阻抗失配结构包括沿所述自由边缘设置于压电层上表面的凸起部。
  11. 根据权利要求10所述的谐振器，其中：
    所述凸起部的宽度D4的范围为0.5-10μm，厚度H2的范围为0.1-0.5μm，凸起部的内边缘和顶电极侧边缘的距离D5的范围为0.5-10μm。
  12. 根据权利要求1-3中任一项所述的谐振器，其中：
    所述压电层的上表面在与所述有效区域对应的区域内设置有底部平坦的压电层凹部，所述压电层凹部的边缘为由第一水平面、第二水平面以及第一水平面和第二水平面之间的第一斜面构成的压电层上台阶结构，第一水平面位于第二水平面下方；
    所述顶电极具有与所述压电层凹部对应的顶电极凹部以及与所述压电层上台阶结构对应的顶电极台阶结构，或者所述顶电极具有与所述压电层凹部对应的顶电极凹部；
    所述声学阻抗失配结构包括所述压电层上台阶结构。
  13. 根据权利要求12所述的谐振器，其中：
    第一水平面与第二水平面之间的高度差H3的范围为0.1-1μm，第一斜面与第一水平面的夹角α1的范围为15度-75度，顶电极侧边缘与第一水平面边沿的横向距离D6的范围为-10-10μm。
  14. 根据权利要求12或13所述的谐振器，其中：
    所述底电极的上表面在与所述压电层凹部对应的区域内设置有底部平坦的底电极凹部，所述底电极凹部的边缘为由第三水平面、第四水平面以及第三水平面与第四水平面之间的第二斜面构成的底电极台阶结构，第三水平面位于第四水平面下方；
    所述压电层的下表面具有与所述底电极凹部对应的压电层凸部以及与所述底电极台阶结构对应的压电层下台阶结构。
  15. 根据权利要求14所述的谐振器，其中：
    第三水平面与第四水平面的高度差H4的范围为0.1-0.5μm，第二斜面与第三水平面的夹角β1的范围为15度-75度。
  16. 根据权利要求1-3中任一项所述的谐振器，其中：
    所述压电层的上表面在与所述有效区域对应的区域内设置有顶部平坦的压电层凸部，所述压电层凸部的边缘为由第五水平面、第六水平面以及第五水平面和第六水平面之间的第三斜面构成的压电层上台阶结构，第五水平面位于第六水平面下方；
    所述声学阻抗失配结构包括所述压电层上台阶结构。
  17. 根据权利要求16所述的谐振器，其中：
    第五水平面与第六水平面之间的高度差H5的范围为0.1-1μm，第三斜面与第五水平面的夹角α2的范围为15度-75度，顶电极侧边缘与第五水平面边沿的横向距离D7的范围为-10-10μm。
  18. 根据权利要求16或17所述的谐振器，其中：
    所述底电极的上表面在与所述压电层凸部对应的区域内设置有顶部平坦的底电极凸部，所述底电极凸部的边缘为由第七水平面、第八水平面以及第七水平面与第八水平面之间的第四斜面构成的底电极台阶结构，第七水平面位于第八水平面下方；
    所述压电层的下表面具有与所述底电极台阶结构对应的压电层凹部以及与所述底电极台阶结构对应的压电层下台阶结构。
  19. 根据权利要求18所述的谐振器，其中：
    第七水平面与第八水平面的高度差H6的范围为0.1-1μm，第四斜面与第七水平面的夹角β2的范围为15度-75度。
  20. 根据权利要求1或2所述的谐振器，其中：
    所述声学阻抗失配结构包括沿所述自由边缘设置于压电层上表面的旋翼部。
  21. 根据权利要求20所述的谐振器，其中：
    所述旋翼部包围的空气腔宽度D8的范围为0.5-10μm，高度H7的范围为0.1-1μm，空气腔距离顶电极边缘的距离D9的范围为0.1-10μm，旋翼与水平面的夹角α3的范围为15度-75度。
  22. 根据权利要求1-3中任一项所述的谐振器，其中：
    所述压电层围绕有效区域的部分具有第一掺杂浓度；
    所述压电层在有效区域内的部分具有不同于第一掺杂浓度的第二掺杂浓度；
    所述声学阻抗失配结构包括压电层的第一掺杂浓度区域与第二掺杂浓度区域相接部。
  23. 根据权利要求22所述的谐振器，其中：
    第一掺杂浓度η1的范围为1-40％原子比，第二掺杂浓度η2的范围为1-40％原子比，且第一掺杂浓度η1与第二掺杂浓度η2的掺杂浓度差异δη的范围为10-30％原子比。
  24. 根据权利要求22或23所述的谐振器，其中：
    第一掺杂浓度区域与第二掺杂浓度区域的边界距离顶电极边缘距离D10的范围为-10-10μm。
  25. 根据权利要求1或2所述的谐振器，其中：
    顶电极的自由边缘侧设置有辅助电极，所述辅助电极与顶电极在径向方向上间隔开，且辅助电极的交变电位与顶电极的交变电位反相。
  26. 根据权利要求25所述的谐振器，其中：
    辅助电极与顶电极之间的间隔D11的范围为0.1-5um。
  27. 根据权利要求26所述的谐振器，其中：
    所述辅助电极的宽度D12的范围为1-10um。
  28. 根据权利要求1所述的谐振器，其中：
    所述间隙的厚度在1-500nm的范围内。
  29. 根据权利要求1所述的谐振器，其中：
    压电层与顶电极之间，以及压电层与底电极之间均设置有间隙。
  30. 一种滤波器，包括根据权利要求1-29中任一项所述的体声波谐振器。
  31. 一种电子设备，包括根据权利要求30所述的滤波器或者根据权利要求1-29中任一项所述的体声波谐振器。
PCT/CN2020/086556 2019-07-15 2020-04-24 带声学阻抗失配结构的体声波谐振器、滤波器及电子设备 Ceased WO2021008186A1 (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115913162A (zh) * 2022-11-23 2023-04-04 武汉衍熙微器件有限公司 声波器件及其制造方法
CN116366024A (zh) * 2021-12-28 2023-06-30 苏州汉天下电子有限公司 滤波器及其制造方法
JP2025513962A (ja) * 2023-04-14 2025-05-02 見聞録（浙江）半導体有限公司 バルク音響共振器及びそのアセンブリと製作方法、電子機器、フィルタ

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111030636A (zh) * 2019-07-15 2020-04-17 天津大学 带声学阻抗失配结构的体声波谐振器、滤波器及电子设备
CN113630099B (zh) * 2020-05-07 2025-03-14 诺思(天津)微系统有限责任公司 体声波谐振器及制造方法、组件、滤波器及电子设备
CN113872553B (zh) * 2020-06-30 2025-10-17 诺思(天津)微系统有限责任公司 体声波谐振器及制造方法、滤波器及电子设备
CN216134461U (zh) * 2020-07-10 2022-03-25 瑞声科技（南京）有限公司 谐振器
CN114070252B (zh) * 2020-08-05 2025-09-23 诺思(天津)微系统有限责任公司 体声波谐振器及组件、滤波器、电子设备
CN114257199A (zh) * 2020-09-22 2022-03-29 诺思(天津)微系统有限责任公司 具有声阻层的体声波谐振器及其组件和制造方法、滤波器和电子设备
CN114337572B (zh) * 2020-09-30 2026-01-23 诺思(天津)微系统有限责任公司 体声波谐振器、掺杂浓度确定方法、滤波器及电子设备
CN114337573B (zh) * 2020-09-30 2026-01-23 诺思(天津)微系统有限责任公司 体声波谐振器、掺杂浓度确定方法、滤波器及电子设备
CN114337571B (zh) * 2020-09-30 2026-01-23 诺思(天津)微系统有限责任公司 体声波谐振器、掺杂浓度确定方法、滤波器及电子设备
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CN117526886A (zh) * 2022-07-28 2024-02-06 诺思(天津)微系统有限责任公司 压电层下侧设置凸起或凹陷的体声波谐振器及制造方法
CN118367890B (zh) * 2024-06-18 2024-09-03 广州市艾佛光通科技有限公司 一种调节声速的体声波谐振器、制备方法及声学滤波器
CN120017004B (zh) * 2025-04-15 2025-07-29 广州市艾佛光通科技有限公司 一种堆叠晶体滤波器及双工器

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1794572A (zh) * 2004-12-22 2006-06-28 安捷伦科技有限公司 用选择性金属蚀刻提高声共振器的性能
CN101924529A (zh) * 2010-08-31 2010-12-22 庞慰 压电谐振器结构
CN103607178A (zh) * 2013-09-17 2014-02-26 诺思（天津）微系统有限公司 薄膜体波谐振器及提高其品质因数的方法
CN108336982A (zh) * 2017-01-17 2018-07-27 三星电机株式会社 体声波谐振器
CN111030636A (zh) * 2019-07-15 2020-04-17 天津大学 带声学阻抗失配结构的体声波谐振器、滤波器及电子设备

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9444426B2 (en) * 2012-10-25 2016-09-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Accoustic resonator having integrated lateral feature and temperature compensation feature
CN102223142B (zh) * 2011-08-13 2019-09-10 张�浩 声波谐振器
CN108134589B (zh) * 2018-02-05 2020-02-18 武汉衍熙微器件有限公司 一种薄膜体声波谐振器
CN109039297B (zh) * 2018-07-26 2022-11-29 开元通信技术（厦门）有限公司 一种体声波器件及其制备方法
CN109889177B (zh) * 2018-12-26 2023-04-07 天津大学 具有掺杂隔离结构的体声波谐振器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1794572A (zh) * 2004-12-22 2006-06-28 安捷伦科技有限公司 用选择性金属蚀刻提高声共振器的性能
CN101924529A (zh) * 2010-08-31 2010-12-22 庞慰 压电谐振器结构
CN103607178A (zh) * 2013-09-17 2014-02-26 诺思（天津）微系统有限公司 薄膜体波谐振器及提高其品质因数的方法
CN108336982A (zh) * 2017-01-17 2018-07-27 三星电机株式会社 体声波谐振器
CN111030636A (zh) * 2019-07-15 2020-04-17 天津大学 带声学阻抗失配结构的体声波谐振器、滤波器及电子设备

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116366024A (zh) * 2021-12-28 2023-06-30 苏州汉天下电子有限公司 滤波器及其制造方法
CN115913162A (zh) * 2022-11-23 2023-04-04 武汉衍熙微器件有限公司 声波器件及其制造方法
JP2025513962A (ja) * 2023-04-14 2025-05-02 見聞録（浙江）半導体有限公司 バルク音響共振器及びそのアセンブリと製作方法、電子機器、フィルタ

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