WO2021007948A1 - 有机发光二极管显示面板及其制作方法和显示装置 - Google Patents

有机发光二极管显示面板及其制作方法和显示装置 Download PDF

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WO2021007948A1
WO2021007948A1 PCT/CN2019/106803 CN2019106803W WO2021007948A1 WO 2021007948 A1 WO2021007948 A1 WO 2021007948A1 CN 2019106803 W CN2019106803 W CN 2019106803W WO 2021007948 A1 WO2021007948 A1 WO 2021007948A1
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pixel
sub
organic
layer
display panel
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French (fr)
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张月
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/612,434 priority Critical patent/US20210020712A1/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses

Definitions

  • the present invention relates to the field of display technology, and in particular to an organic light emitting diode display panel, a manufacturing method thereof, and a display device.
  • OLED Organic Light Emitting Diode
  • OLED display devices include substrates, anodes, organic light-emitting layers (including hole transport layers, composite light-emitting layers, electron transport layers, etc.), cathodes, encapsulation layers, etc.
  • the preparation of OLED devices is usually achieved by vacuum evaporation layer by layer coating.
  • OLED devices can be divided into bottom-emitting devices (Bottom-Emitting OLED) and Top-Emitting OLEDs (Top-Emitting OLED) according to different light emitting directions.
  • OLED Two types, the former emits light from the side of the transparent anode ITO/substrate, and the latter emits light from the side of the translucent cathode on the top.
  • Bottom devices are used by many scientific research institutes because of their relatively simple manufacturing process.
  • Top devices since the light is emitted from the top electrode, there is no competition for the light-emitting area with the driving circuit, so it has a high aperture ratio, and the corresponding luminous brightness, efficiency, and life are improved, and the microcavity effect in the Top device can be Changing the distribution of light in the coordinate space and the frequency space, thereby improving the efficiency and color saturation of the monochromatic luminescence of the OLED device.
  • a high refractive index organic covering layer (Capping) is usually deposited on the cathode of the Top device.
  • Layer, CPL to reduce the total reflection of the emitted light on the cathode.
  • a CPL with a high n value has a relatively high n value in the blue region, and a low n value in the red and green regions.
  • the purpose of the present disclosure is to provide an organic light emitting diode display panel, a manufacturing method thereof, and a display device, which can solve the problems in the prior art.
  • an embodiment of the present invention provides an organic light emitting diode display panel, including: a substrate; at least one pixel unit disposed on the substrate; an organic cover layer disposed on the pixel unit;
  • the pixel unit includes at least a first sub-pixel and a second sub-pixel;
  • the organic cover layer includes a first cover layer and a second cover layer; wherein, the first cover layer is disposed above the pixel unit, and the The second covering layer is disposed on the first covering layer, and the second covering layer is located above the first sub-pixel and the second sub-pixel.
  • D 2 is the thickness when the first covering layer has the highest coupling efficiency for blue light
  • D 3 is the organic covering layer.
  • D 4 is the thickness of the organic coating layer when the coupling efficiency of the green light is the highest
  • D 1 is between D 3 and D 4 .
  • the pixel unit further includes: a third sub-pixel and a fourth sub-pixel, the third sub-pixel and the fourth sub-pixel are arranged in the same layer as the first sub-pixel and the second sub-pixel .
  • the area of the first sub-pixel is smaller than the area of the fourth sub-pixel.
  • the pixel arrangement structure of the organic light emitting diode display panel includes: the second sub-pixel has a center coincident with the center of the virtual square; the centers of the first sub-pixel and the fourth sub-pixel are respectively arranged at On the two vertices of the diagonal of the virtual square; and the center of the third sub-pixel is set on the two vertices of the other diagonal of the virtual square.
  • the material of the organic covering layer is an organic transparent material.
  • the refractive index of the organic covering layer is greater than 1.7.
  • the embodiment of the present invention also provides a method for manufacturing an organic light emitting diode display panel.
  • the method includes the steps of: providing a substrate; forming a pixel unit on the substrate; and evaporating a layer of organic transparent material on the pixel unit. A first covering layer; and a layer of organic transparent material is evaporated on the first organic covering layer to form a second covering layer.
  • D 2 is the thickness when the first covering layer has the highest coupling efficiency for blue light
  • D 3 is the organic covering layer.
  • D 4 is the thickness of the organic coating layer when the coupling efficiency of the green light is highest
  • D 1 satisfies D 4 ⁇ D 1 ⁇ D 3 .
  • An embodiment of the present invention also provides a display device, and the display device includes any of the above-mentioned display panels.
  • the advantage of the present invention is that for different colors of light, organic covering layers of different thicknesses are arranged, thereby improving the light extraction efficiency of RGB pixels in the active matrix organic light emitting diode display panel, thereby improving the active matrix organic light emitting diode display panel.
  • the white light efficiency is that for different colors of light, organic covering layers of different thicknesses are arranged, thereby improving the light extraction efficiency of RGB pixels in the active matrix organic light emitting diode display panel, thereby improving the active matrix organic light emitting diode display panel.
  • FIG. 1 is a schematic structural diagram of an organic light emitting diode display panel provided by an embodiment of the present invention.
  • FIG. 2 is a schematic diagram of the structure of a pixel unit provided by an embodiment of the present invention.
  • FIG. 3 is a schematic diagram of a pixel arrangement structure provided by an embodiment of the present invention.
  • FIG. 4 is a flowchart of a method for manufacturing an organic light emitting diode display panel provided by an embodiment of the present invention.
  • FIG. 5 is a flowchart of a method for manufacturing a pixel unit according to an embodiment of the present invention.
  • FIG. 6 is a schematic structural diagram of a display device provided by an embodiment of the present invention.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying the relative importance or implicitly indicating the number of technical features indicated, thereby limiting the terms “first” and “The feature of “second” may explicitly or implicitly include one or more of the features.
  • “plurality” means two or more than two, unless otherwise specifically defined.
  • FIG. 1 it is a schematic structural diagram of an organic light emitting diode display panel provided by an embodiment of the present invention, including: a substrate 10; a pixel unit 20; and an organic cover layer 50.
  • the pixel unit 20 is disposed on the substrate 10, and the organic covering layer 50 is disposed on the pixel unit 20.
  • the organic covering layer includes a first covering layer 30 and a second covering layer 40.
  • the material of the organic covering layer 50 is an organic transparent material, for example, a photocurable resin.
  • the pixel unit includes a first sub-pixel 4 and a second sub-pixel 3.
  • the first covering layer 30 is arranged above the pixel unit 20
  • the second covering layer 40 is arranged on the first covering layer 30
  • the second covering layer 40 is located on the first covering layer.
  • the second covering layer 40 is disposed above the first sub-pixel 4 and the second sub-pixel 3, which can improve the effect of the organic covering layer on the first sub-pixel 4 and the second sub-pixel 4 Pixel 3 light coupling efficiency.
  • the first sub-pixel 4 is a red sub-pixel
  • the second sub-pixel 3 is a green sub-pixel
  • the pixel unit further includes a third sub-pixel 2 and a fourth sub-pixel 1, the third sub-pixel 2 is a blue sub-pixel, the fourth sub-pixel 1 is a red sub-pixel, and the fourth sub-pixel The area of 1 is larger than the area of the first sub-pixel 4.
  • the pixel arrangement structure of the organic light emitting diode display panel includes: the second sub-pixel 3 has a center coincident with the center of the virtual square 5; the first sub-pixel 4 and the fourth sub-pixel 4 The center of the pixel 1 is respectively set on the vertices of the two diagonals of the virtual square 5; and the center of the third sub-pixel 2 is set on the two vertices of the other diagonal of the virtual square 5 .
  • the fourth The light-emitting area of the sub-pixel 1 (red sub-pixel) is to compensate for the loss caused by the low coupling efficiency of the first cover layer 30 to the fourth sub-pixel 1 (red sub-pixel).
  • the pixel unit 20 further includes: a pixel defining layer 21, an anode layer 22, an organic light emitting layer 23, and a cathode layer 24.
  • the pixel definition layer 21 and the anode layer 22 are formed on the substrate and undergo a patterning operation.
  • the organic light emitting layer 23 is formed on the pixel defining layer 21 and the anode layer 22.
  • the cathode layer 24 covers the organic light-emitting layer and the pixel defining layer 21.
  • D 2 is the thickness when the first covering layer 30 has the highest coupling efficiency for blue light
  • D 3 is the organic covering layer 50 for red light.
  • D 4 is the thickness when the organic coating layer 50 has the highest light coupling efficiency to the green light
  • D 1 is between D 3 and D 4 .
  • the thickness of the first covering layer 30 corresponding to the third sub-pixel 2 is D 2
  • the thickness of the first covering layer 30 corresponding to the fourth sub-pixel 1 is also D 2.
  • the light-emitting area of the fourth sub-pixel 1 is relatively large.
  • the thickness of the organic covering layer 50 (that is, the first covering layer and the second covering layer) corresponding to the first sub-pixel 4 (red sub-pixel) and the second sub-pixel 3 (green sub-pixel) is D 1 (D 4 ⁇ D 1 ⁇ D 3 ).
  • the thickness of the first covering layer is D2
  • the thickness of the second covering layer is D, so that the light coupling efficiency of the organic covering layer 50 (ie, the first covering layer) to the third sub-pixel 2 is At the same time, the light coupling efficiency of the organic cover layer 50 (that is, the first cover layer and the second cover layer) to the first sub-pixel 4 (red sub-pixel) and the second sub-pixel 3 (green sub-pixel) is improved, so that the entire panel The light extraction efficiency is improved.
  • an embodiment of the present invention also provides a manufacturing method of an organic light emitting diode display panel, which includes the following steps:
  • Step S410 Provide a substrate 10.
  • Step S420 forming a pixel unit 20 on the substrate.
  • the pixel unit includes at least a first sub-pixel 4 and a second sub-pixel 3.
  • the first sub-pixel 4 is a red sub-pixel
  • the second sub-pixel 3 is a green sub-pixel.
  • RGB can also be arranged in other ways. For example, arrange the three primary colors of RGB in a 1:1:1 manner.
  • the pixel unit further includes a third sub-pixel 2 and a fourth sub-pixel 1, the third sub-pixel 2 is a blue sub-pixel, the fourth sub-pixel 1 is a red sub-pixel, and the fourth sub-pixel The area of 1 is larger than the area of the first sub-pixel 4.
  • step S420: forming the pixel unit 20 on the substrate further includes the following steps:
  • Step S421 forming a pixel definition layer 21 and an anode layer 22 on the substrate and performing a patterning operation.
  • Step S422 forming an organic light emitting layer 23 on the anode layer 22.
  • Step S423 forming a cathode layer 24 on the organic light-emitting layer 23.
  • an open mask is used to vapor-deposit a first covering layer 30 with a thickness of D2.
  • Step S430 A layer of organic transparent material is evaporated on the pixel unit 20 to form the first covering layer 30.
  • the first covering layer 30 is disposed above the pixel unit 20.
  • Step S440 A layer of organic transparent material is evaporated on the first organic covering layer to form a second covering layer.
  • vapor deposition continues to be the second covering layer 40 on the first sub-pixel 4 and the second sub-pixel 3.
  • the first cover layer 30 is disposed above the pixel unit 20
  • the second cover layer 40 is disposed on the first cover layer 30, and the second cover layer 40 is located on the first sub-pixel 4 and above the second sub-pixel 3.
  • the second covering layer 40 is disposed above the first sub-pixel 4 and the second sub-pixel 3, which can improve the light coupling efficiency of the organic covering layer to the first sub-pixel 4 and the second sub-pixel 3.
  • an embodiment of the present invention also provides a display device 80, which includes the display panel described in the foregoing embodiment.
  • the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc.
  • the advantage of the present invention is that for different colors of light, organic covering layers of different thicknesses are arranged, thereby improving the light extraction efficiency of RGB pixels in the active matrix organic light emitting diode display panel, thereby improving the active matrix organic light emitting diode display panel.
  • the white light efficiency is that for different colors of light, organic covering layers of different thicknesses are arranged, thereby improving the light extraction efficiency of RGB pixels in the active matrix organic light emitting diode display panel, thereby improving the active matrix organic light emitting diode display panel.

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Abstract

一种有机发光二极管显示面板及其制作方法和显示装置（80），其中显示面板包括：基板（10）；像素单元（20），设于所述基板（10）上；有机覆盖层（50），设于所述像素单元（20）上；所述像素单元（20）至少包括第一子像素（4）及第二子像素（3）；所述有机覆盖层（50）包括第一覆盖层（30）及第二覆盖层（40）；其中，所述第一覆盖层（30）设置在所述像素单元（20）的上方，所述第二覆盖层（40）设置于所述第一覆盖层（30）上，且所述第二覆盖层（40）位于所述第一子像素（4）及所述第二子像素（3）的上方。针对不同颜色的光线，设置不同的厚度的有机覆盖层（50），以此提高有源矩阵有机发光二极管显示面板中RGB像素的出光效率。

Description

有机发光二极管显示面板及其制作方法和显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种有机发光二极管显示面板及其制作方法和显示装置。
 背景技术
有机发光二极管（Organic Light Emitting Diode，OLED）是一种利用有机半导体材料在电流驱动下产生可逆变色来实现多彩显示的光电技术。OLED具有轻薄、高亮度、主动发光、能耗低、大视角、快速响应、可柔性、工作温度范围宽等优点，被认为是最有发展前途的新一代显示技术。 OLED显示器件包括基板、阳极、有机发光层（包括空穴传输层、复合发光层、电子传输层等）、阴极、封装层等，OLED器件的制备通常采用真空蒸镀逐层镀膜来实现的。
OLED器件按照出光方向的不同，可以被分为底发射型器件（Bottom-Emitting OLED）和顶发射型OLED（Top-Emitting OLED）两类，前者从透明的阳极ITO/基板一侧出光，而后者从顶部的半透明阴极一侧出光。Bottom器件因其制备工艺相对简单而为广大科研院所所使用。而Top器件，由于光从顶部电极出光，不存在与驱动电路争夺出光面积的情况，因此具有高开口率，相应的发光亮度、效率、寿命都有所提高，且Top 器件中的微腔效应可以改变光在坐标空间和频率空间的分布，继而提高了OLED器件单色发光的效率和色饱和度。
但是，Top器件仅有约20%的光能出射到OLED器件之外，其余约80%的光线由于OLED阴极部位全反射的原因被限制在OLED器件内部。为了增加出光率，现在通常会在Top器件的阴极上蒸镀一层高折射率的有机覆盖层(Capping Layer, CPL)来减弱出射光在阴极的全反射。高n值的CPL在蓝光区域，具有相对较高的n值，而在红绿区域n值较低。
 技术问题
本揭示的目的在于提供一种有机发光二极管显示面板及其制作方法和显示装置，其能解决现有技术中的问题。
 技术解决方案
为解决上述问题，本发明实施例提供了一种有机发光二极管显示面板，包括：一基板；至少一像素单元，设于所述基板上；一有机覆盖层，设于所述像素单元上；所述像素单元至少包括第一子像素及第二子像素；所述有机覆盖层包括第一覆盖层及第二覆盖层；其中，所述第一覆盖层设置在所述像素单元的上方，所述第二覆盖层设置于所述第一覆盖层上，且所述第二覆盖层位于所述第一子像素及所述第二子像素的上方。
进一步地，所述第二覆盖层的厚度设为D，D=D 1-D 2，其中D 2为所述第一覆盖层对蓝光出光耦合效率最高时的厚度，D 3为所述有机覆盖层对红光出光耦合效率最高时的厚度，D 4为所述有机覆盖层对绿光出光耦合效率最高时的厚度，D 1介于D 3和D 4之间。
进一步地，所述像素单元还包括：第三子像素及第四子像素，所述第三子像素和所述第四子像素与所述第一子像素及第二子像素均为同层设置。
进一步地，所述第一子像素的面积小于第四子像素的面积。
进一步地，所述有机发光二极管显示面板的像素排列结构包括：所述第二子像素具有与虚拟方块的中心重合的中心；所述第一子像素与所述第四子像素的中心分别设置于所述虚拟方块对角线的两个的顶点上；以及所述第三子像素的中心设置于所述虚拟方块另一对角线的两个顶点上。
进一步地，所述有机覆盖层的材料为有机透明材料。
进一步地，所述有机覆盖层的折射率大于1.7。
本发明实施例还提供了一种有机发光二极管显示面板的制作方法，所述方法包括步骤：提供一基板；在所述基板上形成像素单元；在所述像素单元蒸镀一层有机透明材料形成第一覆盖层；以及在所述第一有机覆盖层上蒸镀一层有机透明材料形成第二覆盖层。
进一步地，所述第二覆盖层的厚度设为D，D=D 1-D 2，其中D 2为所述第一覆盖层对蓝光出光耦合效率最高时的厚度，D 3为所述有机覆盖层对红光出光耦合效率最高时的厚度，D 4为所述有机覆盖层对绿光出光耦合效率最高时的厚度，D 1满足D 4< D 1< D 3。
本发明实施例还提供了一种显示装置，所述显示装置包括上述任一所述的显示面板。
 有益效果
本发明的优点在于，针对不同颜色的光线，设置不同的厚度的有机覆盖层，以此提高有源矩阵有机发光二极管显示面板中RGB像素的出光效率，从而提高有源矩阵有机发光二极管显示面板中的白光效率。
 附图说明
图1为本发明实施例提供的有机发光二极管显示面板结构示意图。
图2为本发明实施例提供的像素单元结构示意图。
图3为本发明实施例提供的像素排列结构示意图。
图4为本发明实施例提供的有机发光二极管显示面板制作方法流程图。
图5为本发明实施例提供的像素单元制作方法流程图。
图6为本发明实施例提供的显示装置结构示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例，基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
在本发明的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量，由此限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征，在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
如图1所示，为本发明实施例提供的有机发光二极管显示面板结构示意图，包括：基板10；像素单元20；有机覆盖层50。
所述像素单元20，设于所述基板10上，所述有机覆盖层50，设于所述像素单元20上。
其中所述有机覆盖层包括第一覆盖层30及第二覆盖层40。所述有机覆盖层50的材料为有机透明材料，例如，光固化树脂。
结合参阅图3，所述像素单元包括第一子像素4及第二子像素3。其中，所述第一覆盖层30设置在所述像素单元20的上方，所述第二覆盖层40设置于所述第一覆盖层30上，且所述第二覆盖层40位于所述第一子像素4及所述第二子像素3的上方。
在本发明的实施例中，所述第二覆盖层40设置于所述第一子像素4与所述第二子像素3的上方，能够提高有机覆盖层对第一子像素4与第二子像素3的光耦合效率。
在本发明的一个实施例中，所述第一子像素4为红色子像素，所述第二子像素3为绿色子像素。
所述像素单元还包括第三子像素2和第四子像素1，所述第三子像素2为蓝色子像素，所述第四子像素1为红色子像素，且所述第四子像素1的面积大于所述第一子像素4的面积。
在一个实施例中，所述有机发光二极管显示面板的像素排列结构包括：所述第二子像素3具有与虚拟方块5的中心重合的中心；所述第一子像素4与所述第四子像素1的中心分别设置于所述虚拟方块5对角线的两个的顶点上；以及所述第三子像2素的中心设置于所述虚拟方块5另一对角线的两个顶点上。
由于与第四子像素1（红色子像素）对应的第一覆盖层30的厚度和与第三子像素2（蓝色子像素）对应的第一覆盖层30的厚度相同，因此通过增加第四子像素1（红色子像素）的发光面积，以补偿第一覆盖层30对于第四子像素1（红色子像素）的出光耦合效率低造成的损失。
结合参阅图2，所述像素单元20还包括：像素定义层21、阳极层22、有机发光层23、阴极层24。其中，像素定义层21和阳极层22形成在所述基板上且经过图案化操作。有机发光层23形成在所述像素定义层21和所述阳极层22上。阴极层24覆盖在所述有机发光层和像素定义层21上。
所述第二覆盖层40的厚度设为D，D=D 1-D 2，其中D 2为第一覆盖层30对蓝光出光耦合效率最高时的厚度，D 3为有机覆盖层50对红光出光耦合效率最高时的厚度，D 4为有机覆盖层50对绿光出光耦合效率最高时的厚度，D 1介于D 3和 D 4之间。
亦即，与第三子像素2（蓝色子像素）对应的第一覆盖层30的厚度为D 2，与第四子像素1（红色子像素）对应的第一覆盖层30的厚度也是D 2，第四子像素1的发光面积比较大。
另外，与第一子像素4（红色子像素）和第二子像素3（绿色子像素）对应的有机覆盖层50（即第一覆盖层和第二覆盖层）的厚度为D 1（D 4< D 1< D 3）。
在本发明实施例中，所述第一覆盖层的厚度采用D2，第二覆盖层的厚度采用D，这样使得有机覆盖层50（即第一覆盖层）对第三子像素2的出光耦合效率达到最大，同时提高有机覆盖层50（即第一覆盖层和第二覆盖层）对第一子像素4（红色子像素）和第二子像素3（绿色子像素）出光耦合效率，使得整个面板的出光效率得到提高。
如图4所示，本发明实施例还提供一种有机发光二极管显示面板的制作方法，包括以下步骤：
步骤S410：提供一基板10。
步骤S420：在所述基板上形成像素单元20。
结合参阅图3，所述像素单元至少包括第一子像素4及第二子像素3。
在一个实施例中，所述第一子像素4为红色子像素，所述第二子像素3为绿色子像素。当然在其他实施例中，RGB也可以为其他的排列方式。例如，将RGB的三原色按照1:1:1的方式排列。
所述像素单元还包括第三子像素2和第四子像素1，所述第三子像素2为蓝色子像素，所述第四子像素1为红色子像素，且所述第四子像素1的面积大于所述第一子像素4的面积。
结合参阅图5，步骤S420：在所述基板上形成像素单元20，还包括如下步骤：
步骤S421：在所述基板上形成像素定义层21和阳极层22并进行图案化操作。
步骤S422：在阳极层22上形成有机发光层23。
步骤S423：在所述有机发光层23上形成阴极层24。
在蒸镀完阴极层42后，先用开放式掩膜板蒸镀一层厚度为D2的第一覆盖层30，具体步骤如下。
步骤S430：在所述像素单元20上蒸镀一层有机透明材料形成第一覆盖层30。
所述第一覆盖层30设置在所述像素单元20的上方。
步骤S440：在所述第一有机覆盖层上蒸镀一层有机透明材料形成第二覆盖层。
更换第二张掩膜板，此时继续蒸镀的是第一子像素4与第二子像素3上的第二覆盖层40，所述第二覆盖层40的厚度设为D，D=D 1-D 2，其中D 2为第一覆盖层30对蓝光出光耦合效率最高时的厚度，D 3为有机覆盖层50对红光出光耦合效率最高时的厚度，D 4为有机覆盖层50对绿光出光耦合效率最高时的厚度，D 1满足D 4< D 1< D 3。
所述第一覆盖层30设置在所述像素单元20的上方，所述第二覆盖层40设置于所述第一覆盖层30上，且所述第二覆盖层40位于所述第一子像素4及所述第二子像素3的上方。
所述第二覆盖层40设置于所述第一子像素4与所述第二子像素3上方，能够提高有机覆盖层对第一子像素4与第二子像素3的光耦合效率。
如图6所示，本发明实施例还提供一种显示装置80，所述显示装置包括上述实施例所述的显示面板。
该显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本发明的优点在于，针对不同颜色的光线，设置不同的厚度的有机覆盖层，以此提高有源矩阵有机发光二极管显示面板中RGB像素的出光效率，从而提高有源矩阵有机发光二极管显示面板中的白光效率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种有机发光二极管显示面板，其中所述显示面板包括：
    一基板；
    至少一像素单元，设于所述基板上；
    一有机覆盖层，设于所述像素单元上；
    所述像素单元至少包括第一子像素及第二子像素；
    所述有机覆盖层包括第一覆盖层及第二覆盖层；
    其中，所述第一覆盖层设置在所述像素单元的上方，所述第二覆盖层设置于所述第一覆盖层上，且所述第二覆盖层位于所述第一子像素及所述第二子像素的上方。
  2. 如权利要求1所述的有机发光二极管显示面板，其中所述第二覆盖层的厚度设为D，D=D 1-D 2，其中D 2为所述第一覆盖层对蓝光出光耦合效率最高时的厚度，D 3为所述有机覆盖层对红光出光耦合效率最高时的厚度，D 4为所述有机覆盖层对绿光出光耦合效率最高时的厚度，D 1满足D 4< D 1< D 3。
  3. 如权利要求1所述的有机发光二极管显示面板，其中所述像素单元还包括：第三子像素及第四子像素，所述第三子像素及所述四子像素与所述第一子像素及第二子像素均为同层设置。
  4. 如权利要求3所述的有机发光二极管显示面板，其中所述第一子像素的面积小于第四子像素的面积。
  5. 如权利要求3所述的有机发光二极管显示面板，其中所述有机发光二极管显示面板的像素排列结构包括：
    所述第二子像素具有与虚拟方块的中心重合的中心；
    所述第一子像素与所述第四子像素的中心分别设置于所述虚拟方块对角线的两个的顶点上；以及
    所述第三子像素的中心设置于所述虚拟方块另一对角线的两个顶点上。
  6. 如权利要求1所述的有机发光二极管显示面板，其中所述有机覆盖层的材料为有机透明材料。
  7. 如权利要求1所述的有机发光二极管显示面板，其中所述有机覆盖层的折射率大于1.7。
  8. 一种有机发光二极管显示面板的制作方法，其包括：
    提供一基板；
    在所述基板上形成像素单元；
    在所述像素单元蒸镀一层有机透明材料形成第一覆盖层；以及
    在所述第一有机覆盖层上蒸镀一层有机透明材料形成第二覆盖层。
  9. 如权利要求8所述的机发光二极管显示面板的制作方法，其中所述第二覆盖层的厚度设为D，D=D 1-D 2，其中D 2为所述第一覆盖层对蓝光出光耦合效率最高时的厚度，D 3为所述有机覆盖层对红光出光耦合效率最高时的厚度，D 4为所述有机覆盖层对绿光出光耦合效率最高时的厚度，D 1满足D 4< D 1< D 3。
  10. 一种显示装置，所述显示装置包括如权利要求1所述的显示面板。
PCT/CN2019/106803 2019-07-18 2019-09-19 有机发光二极管显示面板及其制作方法和显示装置 Ceased WO2021007948A1 (zh)

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