WO2020258989A1 - 一种基于反射聚光的双面耦合光伏电池系统 - Google Patents

一种基于反射聚光的双面耦合光伏电池系统 Download PDF

Info

Publication number
WO2020258989A1
WO2020258989A1 PCT/CN2020/084108 CN2020084108W WO2020258989A1 WO 2020258989 A1 WO2020258989 A1 WO 2020258989A1 CN 2020084108 W CN2020084108 W CN 2020084108W WO 2020258989 A1 WO2020258989 A1 WO 2020258989A1
Authority
WO
WIPO (PCT)
Prior art keywords
photovoltaic cell
double
sided
reflection
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2020/084108
Other languages
English (en)
French (fr)
Inventor
宣益民
郑立凯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nanjing University of Aeronautics and Astronautics
Original Assignee
Nanjing University of Aeronautics and Astronautics
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanjing University of Aeronautics and Astronautics filed Critical Nanjing University of Aeronautics and Astronautics
Priority to AU2020305426A priority Critical patent/AU2020305426A1/en
Publication of WO2020258989A1 publication Critical patent/WO2020258989A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
    • H10F19/40—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising photovoltaic cells in a mechanically stacked configuration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the invention belongs to the field of semiconductor devices, and in particular relates to a double-sided coupling photovoltaic cell system based on reflection and concentration.
  • photovoltaic cells As a device that can convert solar radiation energy into electrical energy, photovoltaic cells have the advantages of safety, environmental protection, and less restriction by geographical factors. Since the development of the photovoltaic cell industry, various types of photovoltaic utilization devices such as crystalline silicon cells, gallium arsenide cells, copper indium gallium selenium cells, cadmium telluride cells, dye-sensitized cells, and perovskite cells have been born. The difference between the production process and the band used plays their respective roles. After a long period of development, the efficiency of photovoltaic cells with a single bandgap value has been greatly improved, and the cell efficiency is gradually approaching the limit efficiency of a single bandgap value.
  • a battery with a single forbidden band value has a high utilization rate of photons near the forbidden band value and a low utilization rate of photons far away from the forbidden band value.
  • the band gap value of a silicon battery is about 1.1 eV, which can be used
  • the wavelength of sunlight is 300nm-1100nm, but its utilization rate of short-wavelength photons is low, which causes some energy waste and limits the improvement of photoelectric conversion efficiency.
  • the coupling of multi-band gap photovoltaic cells can take advantage of the response characteristics of each sub-cell to different wavelength bands, so that the incident sunlight can be efficiently used in each wavelength band, thereby improving the photoelectric conversion efficiency.
  • the coupling between multi-band gap photovoltaic cells is mostly in the form of stacked layers, that is, the sunlight that is not absorbed by the wide band gap photovoltaic cell on the upper layer is transmitted to the narrow band gap photovoltaic cell on the lower layer to realize sub-band utilization.
  • this type of combination makes the system unable to use the sunlight reflected on the surface of the upper wide band gap photovoltaic cell, resulting in waste of energy and limiting the improvement of system efficiency.
  • the lower-layer narrow-band-gap photovoltaic cell only absorbs part of the energy, resulting in a decrease in carrier concentration, which will cause the performance of the lower-layer narrow-band-gap photovoltaic cell to deteriorate to a certain extent, and cannot fully utilize the advantages of the multi-band-gap coupling cell.
  • the purpose of the present invention is to provide a double-sided coupling photovoltaic cell system based on reflection and concentration to achieve high-efficiency multi-band gap photovoltaic cell photoelectric conversion efficiency.
  • a double-sided coupling photovoltaic cell system based on reflection and concentration is composed of one or more structural units.
  • Each structural unit is composed of a double-sided photovoltaic cell and two reflective photovoltaic cells.
  • the two reflective photovoltaic cells are located in On both sides of the double-sided photovoltaic cell, the light-receiving surface of the reflective photovoltaic cell faces the double-sided photovoltaic cell, and there is an angle between the reflective photovoltaic cell and the double-sided photovoltaic cell, so that the incident light can illuminate after being reflected by the reflective photovoltaic cell To the two sides of the bifacial photovoltaic cell.
  • the included angle between the reflective photovoltaic cell and the double-sided photovoltaic cell is any angle greater than 0° and less than 90°.
  • the included angles between the two reflective photovoltaic cells and the double-sided photovoltaic cells are the included angle A and the included angle B, respectively, and the included angle A and the included angle B are the same or different.
  • the bifacial photovoltaic cell is a cell with a bifacial photovoltaic power generation capability.
  • the two sides of the double-sided photovoltaic cell share the same semiconductor active layer when receiving light and generating electricity.
  • the reflective photovoltaic cell is a cell with at least one-side light-receiving power generation capability.
  • the reflective photovoltaic cell is a cell that uses one or more of metal electrodes or reflectance-increasing films for spectral reflection.
  • the band gap of the semiconductor active layer of the double-sided photovoltaic cell is smaller than the band gap of the semiconductor active layer of the reflective photovoltaic cell.
  • the battery system proposed by the present invention solves the performance degradation of the narrow band gap battery due to the decrease of carrier concentration in the traditional multi-band gap photovoltaic cell combination, and can more efficiently use sunlight of different wavelength bands and make full use of
  • the performance of multi-band gap photovoltaic cell system improves the photoelectric conversion efficiency.
  • the battery system has a simple structure and is easy to implement.
  • Figure 1 is a schematic diagram of a structural unit of the present invention
  • Figure 2 is a schematic diagram of the structure of a double-sided photovoltaic cell selected in the present invention.
  • FIG. 3 is a schematic diagram of the reflective battery structure selected in the present invention.
  • Figure 4 is the reflectance spectrum of the perovskite battery of the present invention in the system
  • Fig. 5 is the I-V curve of the double-sided photovoltaic cell selected in the present invention under different incident conditions
  • Figure 6 is the I-V curve of each battery in the operation of the battery system implemented in the present invention.
  • the double-sided coupling photovoltaic cell system based on reflection and concentration of the present invention is composed of one or more structural units, as shown in Figure 1 as a structural unit, each structural unit consists of a double-sided photovoltaic cell 1 and two Two reflective photovoltaic cells 2 are located on both sides of the double-sided photovoltaic cell 1.
  • the light-receiving surface of the reflective photovoltaic cell 2 faces the double-sided photovoltaic cell 1, the reflective photovoltaic cell 2 and the double-sided photovoltaic cell
  • the included angle between the reflective photovoltaic cell 2 and the double-sided photovoltaic cell 1 is any angle greater than 0° and less than 90°.
  • the included angles between the two reflective photovoltaic cells 2 and the double-sided photovoltaic cell 1 are the included angle A and the included angle B, respectively.
  • the included angle A and the included angle B are independent of each other, and their sizes can be the same or different.
  • the double-sided photovoltaic cell 1 is a battery with double-sided light-receiving and power generation capabilities; the double-sided photovoltaic cell 1 shares the same semiconductor active layer when light-receiving and generating power on both sides.
  • the reflective photovoltaic cell 2 is a cell with at least one-sided light-receiving power generation capability; the reflective photovoltaic cell 2 is a cell that uses one or more of metal electrodes or reflective enhancement films for spectral reflection.
  • the band gap of the semiconductor active layer of the double-sided photovoltaic cell 1 is smaller than the band gap of the semiconductor active layer of the reflective photovoltaic cell 2.
  • the double-sided photovoltaic cell 1 uses a double-sided silicon-based heterojunction cell. As shown in FIG. 2, the cell has a double-sided pyramid suede structure.
  • Amorphous silicon is used as the passivation layer i
  • p- ⁇ -Si:H is used as the hole selection layer p
  • n- ⁇ -Si:H is used as the electron selection layer n
  • indium tin oxide (ITO) material is used as the transparent electrode TE uses Ag material as the metal grid electrode
  • reflective photovoltaic cell 2 uses perovskite battery, as shown in Figure 3, the battery uses tungsten-doped indium oxide (IWO) material as the transparent conductive oxide layer TCO, and uses SnO 2
  • the material is used as the electron transport layer ETL
  • the FACsPbIBr material is used as the perovskite layer PSK
  • the 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9' -Spiro-OMeTAD material is used as the hole transport layer HTL
  • Au is used as the metal electrode M.
  • the included angle A and the included angle B between the two reflective photovoltaic cells 2 and the double-sided photovoltaic cell 1 are preferably 45°.
  • the reflectance curve of the perovskite battery using IWO and commercial conductive oxide as the transparent electrode is shown in Figure 4.
  • the use of IWO material as the transparent conductive oxide in the present invention can greatly improve the perovskite battery.
  • the reflectivity in the infrared band (750 ⁇ 1200nm) (increased from 63.4% to 80.5%) can provide more energy to the silicon cell; the volt-ampere characteristic curve of the silicon cell reflected by the perovskite cell under different incident conditions
  • the open circuit voltage of the bifacial silicon-based heterojunction cell is effectively improved, making the efficiency increase from 7.85% on both sides to 8.67%; when the system is working ,
  • the efficiency of the perovskite cell is 16.81%, the efficiency of the double-sided silicon-based heterojunction cell is 8.67%, and the total system efficiency is 25.48%.

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)

Abstract

本发明公开了一种基于反射聚光的双面耦合光伏电池系统，由一个或多个结构单元构成，每个结构单元由一个双面光伏电池和两个反射式光伏电池组成，两个反射式光伏电池分别位于双面光伏电池的两侧，所述反射式光伏电池的受光面朝向双面光伏电池，反射式光伏电池与双面光伏电池之间存在夹角，使入射光经反射式光伏电池反射后能够照射到双面光伏电池的两个面。本发明解决了传统多带隙光伏电池组合中，窄带隙电池由于载流子浓度降低带来的性能衰减，可更高效地利用不同波段的太阳光，充分发挥多带隙光伏电池系统的性能，提升光电转换效率。该电池系统结构简单，易于实现。

Description

一种基于反射聚光的双面耦合光伏电池系统 技术领域
本发明属于半导体器件领域，具体涉及一种基于反射聚光的双面耦合光伏电池系统。
背景技术
光伏电池作为一种可以将太阳辐射能转化为电能的一种器件，具有安全、环保、受地域因素限制少等优势。光伏电池行业发展以来，诞生了晶硅电池、砷化镓电池、铜铟镓硒电池、碲化镉电池、染料敏化电池和钙钛矿电池等多种类型的光伏利用器件，各种电池由于其制作工艺和利用波段的区别发挥着各自的作用。经过长时间的发展，单一禁带值的光伏电池的效率已经得到了大幅的提升，电池效率逐渐接近单一禁带值的极限效率。然而，单一禁带值的电池对禁带值附近的光子利用率高而对远离禁带值的光子利用率较低，以硅电池为例，硅电池的禁带值约为1.1eV，可利用波段为300nm-1100nm的太阳光，但其对短波段光子的利用率偏低，造成了一部分能量的浪费，限制了光电转换效率的提高。多带隙光伏电池的耦合可以利用各个子电池对不同波段的响应特点，使入射的太阳光在各个波段都能得到高效的利用，从而可以提高光电转化效率。
目前，多带隙光伏电池之间的耦合大多为上下叠层的形式，即将位于上层的宽带隙光伏电池未吸收的太阳光透射到位于下层的窄带隙光伏电池中，实现分波段利用。然而，这种形式的结合使得系统无法利用上层宽带隙光伏电池表面反射的太阳光，造成能量的浪费，限制了系统效率的提升。此外，下层窄带隙光伏电池由于仅吸收了部分能量，导致载流子浓度下降，会在一定程度上造成下层窄带隙光伏电池的性能衰减，无法充分发挥多带隙耦合电池的优势。
发明内容
为了更高效地利用太阳光，本发明的目的是提供一种基于反射聚光的双面耦合光伏电池系统，以实现高效的多带隙光伏电池的光电转换效率。
为实现上述目的，本发明采用的技术方案为：
一种基于反射聚光的双面耦合光伏电池系统，由一个或多个结构单元构成，每个结构单元由一个双面光伏电池和两个反射式光伏电池组成，两个反射式光伏电池分别位于双面光伏电池的两侧，所述反射式光伏电池的受光面朝向双面光伏电池，反射式光伏电池与双面光伏电池之间存在夹角，使入射光经反射式光伏电池反射后能够照射到双面光 伏电池的两个面。
进一步的，所述反射式光伏电池与双面光伏电池之间的夹角为大于0°且小于90°的任意角度。
进一步的，所述两个反射式光伏电池与双面光伏电池之间的夹角分别为夹角A和夹角B，夹角A和夹角B的大小相同或不同。
进一步的，所述双面光伏电池为具有双面受光发电能力的电池。
进一步的，所述双面光伏电池的双面受光发电时共用同一半导体活性层。
进一步的，所述反射式光伏电池为至少具有单面受光发电能力的电池。
进一步的，所述反射式光伏电池为利用金属电极或增反膜中的一种或多种进行光谱反射的电池。
进一步的，所述双面光伏电池的半导体活性层的禁带宽度小于反射式光伏电池的半导体活性层的禁带宽度。
有益效果：本发明所提出的电池系统，解决了传统多带隙光伏电池组合中，窄带隙电池由于载流子浓度降低带来的性能衰减，可更高效地利用不同波段的太阳光，充分发挥多带隙光伏电池系统的性能，提升光电转换效率。且该电池系统结构简单，易于实现。
附图说明
图1为本发明的一个结构单元示意图；
图2为本发明选用的双面光伏电池结构示意图；
图3为本发明选用的反射式电池结构示意图；
图4为本发明钙钛矿电池在系统中的反射光谱；
图5为本发明选用的双面光伏电池在不同入射情况下的I-V曲线；
图6为本发明实施的电池系统工作中各电池I-V曲线；
图中，1-双面光伏电池，2-反射式光伏电池。
具体实施方式
下面结合附图对本发明做更进一步的解释。
本发明的一种基于反射聚光的双面耦合光伏电池系统，由一个或多个结构单元构成，如图1所示为一个结构单元，每个结构单元由一个双面光伏电池1和两个反射式光伏电池2组成，两个反射式光伏电池2分别位于双面光伏电池1的两侧，反射式光伏电池2的受光面朝向双面光伏电池1，反射式光伏电池2与双面光伏电池1之间存在夹角，分 别为夹角A和夹角B，使入射光经反射式光伏电池2反射后能够照射到双面光伏电池1的两个面。
反射式光伏电池2与双面光伏电池1之间的夹角为大于0°且小于90°的任意角度。两个反射式光伏电池2与双面光伏电池1之间的夹角分别为夹角A和夹角B，夹角A和夹角B相互独立，其大小可以相同，也可以不同。
其中，双面光伏电池1为具有双面受光发电能力的电池；双面光伏电池1的双面受光发电时共用同一半导体活性层。反射式光伏电池2为至少具有单面受光发电能力的电池；反射式光伏电池2为利用金属电极或增反膜中的一种或多种进行光谱反射的电池。
双面光伏电池1的半导体活性层的禁带宽度小于反射式光伏电池2的半导体活性层的禁带宽度。
实施例:
本实施例的基于反射聚光的双面耦合光伏电池系统中，双面光伏电池1选用双面硅基异质结电池，如图2所示，该电池具有双面金字塔绒面结构，采用本征非晶硅作为钝化层i，采用p-α-Si:H作为空穴选择层p，采用n-α-Si:H作为电子选择层n，采用氧化铟锡(ITO)材料作为透明电极TE，采用Ag材料作为金属栅线电极；反射式光伏电池2选用钙钛矿电池，如图3所示，该电池采用掺钨氧化铟(IWO)材料作为透明导电氧化物层TCO，采用SnO 2材料作为电子传输层ETL，采用FACsPbIBr材料作为钙钛矿层PSK，采用2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴(Spiro-OMeTAD)材料作为空穴传输层HTL，采用Au作为金属电极M。
本实施例中，两个反射式光伏电池2与双面光伏电池1之间的夹角A和夹角B均优选为45°。
在本实施例条件下，分别使用IWO和商业导电氧化物作为透明电极的钙钛矿电池的反射率曲线如图4所示，本发明采用IWO材料作为透明导电氧化物可大幅提高钙钛矿电池在红外波段(750～1200nm)的反射率(从63.4％提升至80.5％)，可以给硅电池提供更多能量；经钙钛矿电池反射后的硅电池，在不同入射情况的伏安特性曲线如图5所示，当双面同时接受反射光照射时，双面硅基异质结电池的开路电压得到了有效提升，使得效率从双面平均的7.85％提升至8.67％；当系统工作时，钙钛矿电池效率为16.81％，双面硅基异质结电池效率为8.67％，系统总效率为25.48％，相对于单独工作的双面硅基异质结电池(效率21.1％)，效率提升了4.38％
结果说明本发明所提出的基于反射耦合的钙钛矿/硅基异质结电池系统，既可以避免太阳光的反射损失，也可以充分利用双面硅基异质结电池的优势，以此提升光电转换效率。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。

Claims (8)

  1. 一种基于反射聚光的双面耦合光伏电池系统，其特征在于：由一个或多个结构单元构成，每个结构单元由一个双面光伏电池(1)和两个反射式光伏电池(2)组成，两个反射式光伏电池(2)分别位于双面光伏电池(1)的两侧，所述反射式光伏电池(2)的受光面朝向双面光伏电池(1)，反射式光伏电池(2)与双面光伏电池(1)之间存在夹角，使入射光经反射式光伏电池(2)反射后能够照射到双面光伏电池(1)的两个面。
  2. 根据权利要求1所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述反射式光伏电池(2)与双面光伏电池(1)之间的夹角为大于0°且小于90°的任意角度。
  3. 根据权利要求1或2所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述两个反射式光伏电池(2)与双面光伏电池(1)之间的夹角分别为夹角A和夹角B，夹角A和夹角B的大小相同或不同。
  4. 根据权利要求1所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述双面光伏电池(1)为具有双面受光发电能力的电池。
  5. 根据权利要求1或4所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述双面光伏电池(1)的双面受光发电时共用同一半导体活性层。
  6. 根据权利要求1所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述反射式光伏电池(2)为至少具有单面受光发电能力的电池。
  7. 根据权利要求1或6所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述反射式光伏电池(2)为利用金属电极或增反膜中的一种或多种进行光谱反射的电池。
  8. 根据权利要求1所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述双面光伏电池(1)的半导体活性层的禁带宽度小于反射式光伏电池(2)的半导体活性层的禁带宽度。
PCT/CN2020/084108 2019-06-26 2020-04-10 一种基于反射聚光的双面耦合光伏电池系统 Ceased WO2020258989A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2020305426A AU2020305426A1 (en) 2019-06-26 2020-04-10 Double-sided coupling photovoltaic cell system based on reflection and condensation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910558571.X 2019-06-26
CN201910558571.XA CN110335909B (zh) 2019-06-26 2019-06-26 一种基于反射聚光的双面耦合光伏电池系统

Publications (1)

Publication Number Publication Date
WO2020258989A1 true WO2020258989A1 (zh) 2020-12-30

Family

ID=68142438

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2020/084108 Ceased WO2020258989A1 (zh) 2019-06-26 2020-04-10 一种基于反射聚光的双面耦合光伏电池系统

Country Status (3)

Country Link
CN (1) CN110335909B (zh)
AU (1) AU2020305426A1 (zh)
WO (1) WO2020258989A1 (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110335909B (zh) * 2019-06-26 2021-09-17 南京航空航天大学 一种基于反射聚光的双面耦合光伏电池系统
WO2022061729A1 (zh) * 2020-09-25 2022-03-31 博立多媒体控股有限公司 太阳能利用装置
CN113098385A (zh) * 2021-04-29 2021-07-09 华能陕西发电有限公司 一种具有反光装置的光伏组件
CN113114101A (zh) * 2021-04-29 2021-07-13 华能陕西发电有限公司 一种光伏组件用反射膜及其制备方法
CN113162543A (zh) * 2021-04-29 2021-07-23 华能陕西发电有限公司 一种具有选择反射膜的光伏发电系统
CN115172503A (zh) * 2022-06-29 2022-10-11 中国华能集团清洁能源技术研究院有限公司 夹角子电池组件和光伏电池
WO2025171330A1 (en) * 2024-02-08 2025-08-14 Vanse Corporation Increased power output photovoltaic system
WO2025262521A1 (en) 2024-06-17 2025-12-26 D.D. Innovation Srl Hybrid energy production system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872063A (zh) * 2010-06-01 2010-10-27 黄建文 一种锥形聚光系统
CN102437208A (zh) * 2011-12-08 2012-05-02 上海太阳能电池研究与发展中心 机械组装太阳能电池
CN102610601A (zh) * 2012-03-31 2012-07-25 上海太阳能电池研究与发展中心 一种可提高太阳光能利用率的组合太阳能电池
CN202633344U (zh) * 2012-04-13 2012-12-26 上海太阳能电池研究与发展中心 宽光谱吸收的机械组装太阳能电池
CN205508846U (zh) * 2016-04-08 2016-08-24 合肥中南光电有限公司 一种双面聚光光伏结构
CN110335909A (zh) * 2019-06-26 2019-10-15 南京航空航天大学 一种基于反射聚光的双面耦合光伏电池系统

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201117666Y (zh) * 2007-10-24 2008-09-17 陈祖培 聚光太阳电池组件
CN201570506U (zh) * 2009-11-20 2010-09-01 江苏华创光电科技有限公司 太阳能电池高效受光装置
CN106847981B (zh) * 2017-03-10 2018-01-23 西藏大学 一种可折叠四棱锥式反射聚光太阳能电池阵

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101872063A (zh) * 2010-06-01 2010-10-27 黄建文 一种锥形聚光系统
CN102437208A (zh) * 2011-12-08 2012-05-02 上海太阳能电池研究与发展中心 机械组装太阳能电池
CN102610601A (zh) * 2012-03-31 2012-07-25 上海太阳能电池研究与发展中心 一种可提高太阳光能利用率的组合太阳能电池
CN202633344U (zh) * 2012-04-13 2012-12-26 上海太阳能电池研究与发展中心 宽光谱吸收的机械组装太阳能电池
CN205508846U (zh) * 2016-04-08 2016-08-24 合肥中南光电有限公司 一种双面聚光光伏结构
CN110335909A (zh) * 2019-06-26 2019-10-15 南京航空航天大学 一种基于反射聚光的双面耦合光伏电池系统

Also Published As

Publication number Publication date
AU2020305426A1 (en) 2021-08-19
CN110335909B (zh) 2021-09-17
CN110335909A (zh) 2019-10-15

Similar Documents

Publication Publication Date Title
WO2020258989A1 (zh) 一种基于反射聚光的双面耦合光伏电池系统
US20090165845A1 (en) Back contact module for solar cell
CN109004053A (zh) 双面受光的晶体硅/薄膜硅异质结太阳电池及制作方法
CN207282509U (zh) 双面受光的晶体硅/薄膜硅异质结太阳电池
US20110308606A1 (en) Solar cell of improved photo-utilization efficiency
KR102350885B1 (ko) 태양 전지
CN101246914A (zh) 薄膜太阳能电池的背反射层
CN102244111B (zh) 一种薄膜太阳能电池
CN102097514B (zh) 太阳能电池
Ahmad et al. A novel approach to reduce both front and rear side power losses in PERC solar cells using different combinations of transparent metal oxides
US20110100426A1 (en) Thin film solar cell and manufacturing method thereof
CN103094378B (zh) 含有变In组分InGaN/GaN多层量子阱结构的背入射太阳能电池
CN106449845B (zh) 一种基于Si/TiOx异质结的双面晶体硅太阳电池
CN120417580A (zh) 包含选择性反射/透光光学薄膜的叠层太阳能电池结构
Fan et al. Perovskite/silicon-based heterojunction tandem solar cells with 14.8% conversion efficiency via adopting ultrathin Au contact
US12100562B2 (en) Solar cell with alumina coated porous silicon layer
CN106876513B (zh) 一种等离极化激元横向异质集成的太阳电池
CN206271724U (zh) 一种基于Si/TiOx异质结的双面晶体硅太阳电池
TWM645198U (zh) 雙面吸光型光伏電池
CN203536448U (zh) 一种掺杂量子点硅太阳电池
CN105977320A (zh) 一种薄膜光伏电池
TWI850761B (zh) 雙面吸光型光伏電池
CN219679160U (zh) 光伏电池
CN112051681A (zh) 彩膜基板及液晶显示装置
CN218918911U (zh) 叠层太阳能电池及光伏组件

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 20832182

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020305426

Country of ref document: AU

Date of ref document: 20200410

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 20832182

Country of ref document: EP

Kind code of ref document: A1