WO2020258537A1 - 有机电致发光器件 - Google Patents

有机电致发光器件 Download PDF

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Publication number
WO2020258537A1
WO2020258537A1 PCT/CN2019/106521 CN2019106521W WO2020258537A1 WO 2020258537 A1 WO2020258537 A1 WO 2020258537A1 CN 2019106521 W CN2019106521 W CN 2019106521W WO 2020258537 A1 WO2020258537 A1 WO 2020258537A1
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Prior art keywords
layer
type doped
light
cathode
anode
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PCT/CN2019/106521
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English (en)
French (fr)
Inventor
丁可
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/613,406 priority Critical patent/US20220223815A1/en
Publication of WO2020258537A1 publication Critical patent/WO2020258537A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/156—Hole transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/166—Electron transporting layers comprising a multilayered structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers

Definitions

  • This application relates to the technical field of display panels, and in particular to an organic electroluminescent device.
  • Organic light emitting diodes (Organic light Emitting Diode, OLED) have the advantages of self-luminous, ultra-thin, low power consumption, high contrast, and can be applied to flexible displays. They have received extensive attention and research in the display industry.
  • TEOLEDs Top-emitting OLEDs
  • the transport capacity of electrons and holes in TEOLED differs greatly, the injection of carriers (including electrons and holes)
  • the large difference in rate makes the exciton recombination area of the device deviate from the light-emitting layer and is close to the carrier with a smaller transport capacity, and the recombination area is narrow, which is not conducive to the continued improvement of device life and efficiency.
  • the use of the PiN-type OLED structure can effectively reduce the device voltage and improve the device performance.
  • the P-type doped hole transport layer and the N-type doped electron transport layer are located on the anode and cathode sides, respectively, and the middle is not Used as an electrically doped light-emitting layer or a combined layer of a light-emitting layer and exciton (electron-hole composite structure) blocking layer.
  • the evaporation process of the cathode will cause the self-doping of the N-type doped electron transport layer and destroy the performance of the N-type doped electron transport layer. This self-doping effect will vary with the type of vapor deposited metal, The vapor deposition environment, vapor deposition rate, etc. fluctuate and cause unstable device performance.
  • OLED devices have technical problems such as low device service life and low working efficiency caused by unbalanced carrier injection and self-doping of the N-doped electron transport layer during the cathode evaporation process.
  • the present application provides an organic electroluminescent device.
  • a PN junction layer with rectifying performance in the light-emitting function layer By arranging a PN junction layer with rectifying performance in the light-emitting function layer, the imbalance of carrier injection in the organic electroluminescent device and the N-type doping during the evaporation process of the cathode are solved The technical problems of low device service life and low working efficiency caused by self-doping of electron transport layer.
  • This application provides an organic electroluminescent device, including:
  • the cathode is arranged opposite to the anode
  • a light-emitting functional layer arranged between the anode and the cathode;
  • the light-emitting function layer includes a light-emitting layer and a PN junction layer located on one side of the light-emitting layer; when the anode is positively energized and the cathode is negatively energized, the PN junction layer forms a circuit breaker, so that the The rate at which the cathode and the anode inject carriers into the light-emitting layer is balanced.
  • the PN junction layer is arranged on the side of the light-emitting layer close to the cathode, and when the anode is positively energized and the cathode is negatively energized, The PN junction layer forms an open circuit to prevent the cathode from injecting electrons into the light-emitting layer, so that the rate of injecting carriers into the light-emitting layer by the cathode and the anode is balanced.
  • the PN junction layer includes a P-type doped layer and an N-type doped layer; the P-type doped layer is stacked on the N-type doped layer , And the P-type doped layer is located between the N-type doped layer and the cathode; the light-emitting function layer further includes an electron transport layer, and the electron transport layer is disposed on the cathode and the P-type Between the doped layers, or the electron transport layer is arranged between the light-emitting layer and the N-type doped layer.
  • the PN junction layer includes a P-type doped layer and an N-type doped layer; the P-type doped layer is stacked on the N-type doped layer , And the P-type doped layer is located between the N-type doped layer and the cathode; the N-type doped layer includes an N-type doped electron transport layer.
  • the light-emitting function layer further includes a hole transport layer disposed on the side of the light-emitting layer close to the anode, and the hole transport layer includes a P-type dopant. Doped hole transport layer or undoped hole transport layer.
  • the PN junction layer is arranged on the side of the light-emitting layer close to the anode, and when the anode is positively energized and the cathode is negatively energized, The PN junction layer forms an open circuit to prevent the anode from injecting holes in the direction of the light-emitting layer, and balance the rate of injection of carriers into the light-emitting layer by the cathode and the anode.
  • the PN junction layer includes a P-type doped layer and an N-type doped layer; the P-type doped layer is stacked on the N-type doped layer , And the N-type doped layer is located between the P-type doped layer and the anode; the light-emitting function layer further includes a hole transport layer, and the hole transport layer is disposed on the anode and the anode. Between N-type doped layers, or, the hole transport layer is provided between the light-emitting layer and the P-type doped layer.
  • the PN junction layer includes a P-type doped layer and an N-type doped layer; the P-type doped layer is stacked on the N-type doped layer , And the N-type doped layer is located between the P-type doped layer and the anode; the P-type doped layer includes a P-type doped hole transport layer or a P-type doped hole injection layer.
  • the light-emitting function layer further includes an electron transport layer disposed on the side of the light-emitting layer close to the cathode, and the electron transport layer includes N-type doped electrons. Transport layer or undoped electron transport layer.
  • the light-emitting function layer further includes an injection control layer, and the material of the injection control layer includes an electron blocking material, a hole blocking material, or an exciton blocking material.
  • the injection control layer is arranged between the light-emitting layer and the PN junction layer, or the injection control layer is arranged on the side of the light-emitting layer away from the PN junction layer.
  • the organic electroluminescent device further includes a light-coupling layer disposed on the side of the cathode away from the anode.
  • the organic electroluminescent device further includes an electron injection layer disposed on the side of the cathode close to the light-emitting function layer.
  • the material of the PN junction layer includes organic small molecule materials.
  • This application also provides an organic electroluminescent device, including:
  • the cathode is arranged opposite to the anode
  • a light-emitting functional layer arranged between the anode and the cathode;
  • the light-emitting functional layer includes a light-emitting layer, a PN junction layer on the side of the light-emitting layer close to the cathode, and a hole transport layer on the side of the light-emitting layer close to the anode;
  • the PN junction layer includes P -Type doped layer and N-type doped layer;
  • the P-type doped layer is stacked on the N-type doped layer, and the P-type doped layer is located between the N-type doped layer and the cathode
  • the N-type doped layer includes an N-type doped electron transport layer;
  • the PN junction layer forms an open circuit to prevent the cathode from injecting electrons toward the light-emitting layer, so that the cathode and the anode are directed toward the light-emitting layer.
  • the rate of injected carriers is balanced.
  • the present application provides a PN junction layer in the light-emitting function layer, which has rectification performance.
  • the PN junction layer forms an open circuit, which can inhibit the rapid migration rate.
  • the excessive injection of carriers (electrons or holes) makes the electrons injected into the light-emitting layer from the cathode and the holes injected into the light-emitting layer from the anode in a balanced state, which is beneficial to improve the service life and working efficiency of organic electroluminescent devices.
  • the PN junction layer includes a P-type doped layer and an N-type doped layer stacked with the P-type doped layer.
  • the contact surface of the P-type doped layer and the N-type doped layer forms a PN junction with rectifying performance, and the P-type doped layer
  • the impurity layer is set close to the cathode, and the N-type doped layer is set close to the anode.
  • the carrier transmission near the PN junction layer in the organic electroluminescent device is realized by the tunneling effect at the PN junction, which will generally weaken the carrier transmission and injection, thereby suppressing the excessive injection of the carriers
  • the role of the cathode, the electrons injected into the light-emitting layer and the holes injected into the light-emitting layer by the anode are in a balanced state; when the PN junction layer is arranged between the cathode and the light-emitting layer, the N-type doped layer includes N-type doped electron transport
  • the P-type doped layer is arranged between the N-type doped electron transport layer and the cathode, which can effectively inhibit the self-doping of the N-type doped electron transport layer during the metal cathode evaporation process, and improve the organic electroluminescent device The service life and work efficiency.
  • FIG. 1 is a schematic structural diagram of an organic electroluminescent device provided by an embodiment of the application.
  • FIG. 2 is a schematic structural diagram of another organic electroluminescent device provided by an embodiment of the application.
  • FIG. 3 is a schematic structural diagram of another organic electroluminescent device provided by an embodiment of the application.
  • FIG. 4 is a schematic structural diagram of another organic electroluminescent device provided by an embodiment of the application.
  • FIG. 5 is a schematic structural diagram of another organic electroluminescent device provided by an embodiment of the application.
  • FIG. 6 is a schematic structural diagram of another organic electroluminescent device provided by an embodiment of the application.
  • FIG. 7 is a schematic structural diagram of another organic electroluminescent device provided by an embodiment of the application.
  • FIG. 8 is a schematic structural diagram of another organic electroluminescent device provided by an embodiment of the application.
  • FIG. 9 is a schematic structural diagram of another organic electroluminescent device provided by an embodiment of the application.
  • FIG. 10 is a schematic structural diagram of another organic electroluminescent device provided by an embodiment of the application.
  • connection should be interpreted broadly unless otherwise clearly specified and limited.
  • it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication between two components.
  • connection should be interpreted broadly unless otherwise clearly specified and limited.
  • it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be a mechanical connection or an electrical connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal communication between two components.
  • an embodiment of the present application provides an organic electroluminescence device 1, including: an anode 2, a cathode 3 disposed opposite to the anode 2, and a light emitting device disposed between the anode 2 and the cathode 3.
  • Functional layer 4 the light-emitting functional layer 4 includes a light-emitting layer 5 and a PN junction layer 6 located on the side of the light-emitting layer 5; when the anode 2 is positively energized and the cathode 3 is negatively energized, the PN junction layer 6 forms a disconnection to make the cathode 3 and the anode 2 inject carriers into the light-emitting layer 5 at a balanced rate.
  • the organic electroluminescent device 1 further includes a substrate 13, and the anode 2 is formed on the substrate 13.
  • the material of the light-emitting layer 5 includes host and guest dopant materials
  • the material of the anode 2 includes but is not limited to high work function metals or metal oxides
  • the cathode 3 is transparent
  • the material of the cathode 3 includes but not limited to metals or metals.
  • Carriers include electrons, holes or excitons
  • cathode 3 provides electrons
  • electrons migrate from cathode 3 to light-emitting layer 5
  • anode 2 provides holes
  • holes migrate from anode 2 to light-emitting layer 5, injected by cathode 3
  • the electrons and the holes injected by the anode 2 recombine in the light-emitting layer 5 to form electron-hole pairs (ie excitons) at the bound energy level.
  • the excitons are deexcited to emit photons, and visible light is generated in the light-emitting layer 5.
  • the exciton recombination area When the electron injection rate and the hole injection rate are unbalanced, the exciton recombination area will be close to the side of the exciton with a slower injection rate, making the exciton recombination area deviate from the light-emitting layer 5, and the recombination area is narrow, which is not conducive to organic electroluminescence The service life and work efficiency of the device 1 are improved.
  • the PN junction layer 6 includes a PN junction.
  • the PN junction is the transition area near the interface between the P-type semiconductor and the N-type semiconductor.
  • the PN junction is characterized by rectification, that is, when the P-type semiconductor is connected to the positive electrode and the N-type semiconductor is connected to the negative electrode. , The PN junction is turned on; when the P-type semiconductor is connected to the negative electrode and the N-type semiconductor is connected to the positive electrode, the PN junction is not turned on and will not transmit carriers.
  • the PN junction layer 6 is located on the side of the light-emitting layer 5, can be located on the side of the light-emitting layer 5 close to the cathode 3, or can be located on the side of the light-emitting layer 5 close to the anode 2.
  • the position of the PN junction layer 6 is determined by the migration rate of electrons and holes in the organic electroluminescent device 1. When the migration rate of electrons is greater than that of holes, the PN junction layer 6 is located on the light-emitting layer 5 close to the cathode 3. When the migration rate of holes is greater than that of electrons, the PN junction layer 6 is located on the side of the light-emitting layer 5 close to the anode 2, as shown in Fig. 2.
  • the PN junction layer 6 has rectification performance.
  • the PN junction layer 6 forms a disconnection, making it close to the PN
  • the transport of carriers in the junction layer 6 is realized by the tunneling effect at the PN junction, which can suppress the excessive injection of carriers with a fast migration rate, so that the electrons injected from the cathode 3 into the light-emitting layer 5 and the anode 2 are injected into the light-emitting layer
  • the holes of 5 are in a balanced state, which is beneficial to improve the service life and working efficiency of the organic electroluminescent device 1.
  • the light-emitting functional layer 4 further includes an injection control layer 7.
  • the material of the injection control layer 7 includes an electron blocking material, a hole blocking material, or an exciton blocking material; the injection control layer 7 is arranged between the light-emitting layer 5 and the PN junction layer 6, as shown in FIG. 3; or, the injection control layer 7 is arranged on the side of the light-emitting layer 5 away from the PN junction layer 6, as shown in FIG.
  • the injection control layer 7 plays a role of assisting the PN junction layer 6 to regulate the injection balance of carriers in the organic electroluminescent device 1.
  • the injection control layer 7 can block the migration of electrons, holes or excitons,
  • the material of the injection control layer 7 is determined by the position of the injection control layer 7 and the carrier migration rate.
  • the material of the injection control layer 7 includes electrons. Blocking material, hole blocking material or exciton blocking material.
  • the material of the injection control layer 7 includes a blocking material for carriers with a faster migration rate .
  • the ultimate goal is to balance the electrons and holes injected into the light-emitting layer 5, and avoid the exciton quenching phenomenon caused by the reverse energy transfer of the excitons formed on the light-emitting layer 5, and improve the operation of the organic electroluminescent device 1. effectiveness.
  • the organic electroluminescent device 1 further includes a light-coupling layer 8 arranged on the side of the cathode 3 away from the anode 2.
  • the light-coupling layer 8 in this embodiment is used to increase the light extraction rate and reduce the light-emitting loss of the organic electroluminescent device 1.
  • the embodiment of the present application provides an organic electroluminescent device 1.
  • the PN junction layer 6 is provided on the side of the light-emitting layer 5 close to the cathode 3.
  • the PN junction layer 6 forms an open circuit to prevent the cathode 3 from injecting electrons into the light-emitting layer 5 and balance the rate of carrier injection of the cathode 3 and anode 2 into the light-emitting layer 5.
  • the migration rate of electrons is greater than the migration rate of holes.
  • most blue light host (BH) materials are electronic-type hosts, and the ability to transport electrons is greater than holes.
  • BH blue light host
  • the organic electroluminescent device 1 uses this type of host material, The exciton recombination area of the organic electroluminescence device 1 will be close to the anode 2 side, and the recombination area is narrow, which is not conducive to the improvement of the service life and working efficiency of the organic electroluminescence device 1.
  • the PN junction layer 6 forms an open circuit, which can suppress the excessive injection of electrons, so that the cathode 3 is injected into the light-emitting layer 5 and the anode 2 is injected into the light-emitting layer.
  • the holes of 5 are in a balanced state, which is beneficial to improve the service life and working efficiency of the organic electroluminescent device 1.
  • the PN junction layer 6 includes a P-type doped layer 9 and an N-type doped layer 10; the P-type doped layer 9 is stacked on the N-type doped layer 10, and the P-type doped layer 9 is located Between the N-type doped layer 10 and the cathode 3; the light-emitting functional layer 4 further includes an electron transport layer 11. As shown in FIG. 5, the electron transport layer 11 is provided between the light-emitting layer 5 and the N-type doped layer 10; or, As shown in FIG. 6, the electron transport layer 11 is provided between the cathode 3 and the P-type doped layer 9.
  • the P-type doped layer 9 is equivalent to a P-type semiconductor
  • the N-type doped layer 10 is equivalent to an N-type semiconductor.
  • the contact surface between the P-type doped layer 9 and the N-type doped layer 10 forms a PN junction with rectifying properties.
  • the material of the P-type doped layer 9 and the N-type doped layer 10 includes but is not limited to organic small molecule materials
  • the material of the electron transport layer 11 includes but is not limited to organic small molecule materials.
  • an electron injection layer (not shown in the figure) may be provided on the side of the cathode 3 close to the light-emitting layer 5.
  • the material of the electron injection layer includes but is not limited to metal materials. If the electron transport layer 11 has the functions of both electron injection and transport In this case, there is no need to provide an electron injection layer.
  • the contact surface between the P-type doped layer 9 and the N-type doped layer 10 forms a PN junction with rectifying performance.
  • the P-type doped layer 9 is arranged close to the cathode 3. When the anode 2 is positively energized, the cathode 3 is connected. When negatively charged, the P-type doped layer 9 is connected to the negative electrode (cathode 3), and the N-type doped layer 10 is connected to the positive electrode (anode 2).
  • the PN junction forms an open circuit, so that the transmission of electrons depends on the tunneling effect at the PN junction.
  • the transmission and injection of electrons are weakened, thereby suppressing excessive electron injection, so that the electrons injected into the light-emitting layer 5 from the cathode 3 and the holes injected into the light-emitting layer 5 from the anode 2 are in a balanced state.
  • the light-emitting functional layer 4 further includes a hole transport layer 12 disposed on the side of the light-emitting layer 5 close to the anode 2.
  • the hole transport layer 12 includes a P-type doped hole transport layer or an undoped hole transport layer. Floor.
  • the material of the hole transport layer 12 includes but is not limited to organic small molecule materials.
  • the role of the hole transport layer 12 is to reduce the hole injection barrier and improve the hole injection efficiency.
  • the hole transport layer 12 includes a P-type doped hole transport layer or an undoped hole transport layer. Among them, the P-type doped hole transport layer has a better hole injection effect than the undoped hole transport layer, which can reduce the driving voltage required for hole injection and improve the performance of the organic electroluminescent device 1. Whether the hole transport layer 12 is doped is not limited.
  • the embodiment of the present application also provides an organic electroluminescent device 1.
  • the PN junction layer 6 includes a P-type doped layer 9 and an N-type doped layer 10;
  • the doped layer 9 is stacked on the N-type doped layer 10, and the P-type doped layer 9 is located between the N-type doped layer 10 and the cathode 3;
  • the N-type doped layer 10 includes an N-type doped electron transport layer.
  • the N-type doped layer 10 is the composition structure of the PN junction layer 6, and is also the electron transport layer (specifically, the N-type doped electron transport layer) of the organic electroluminescent device 1, which can realize the PN junction
  • the function can also realize the function of transporting electrons; in addition, the evaporation process of the cathode 3 will cause the self-doping of the N-type doped electron transport layer, destroying the performance of the N-type doped electron transport layer, but will not cause the P-type doping
  • the P-type doped layer 9 is arranged between the N-type doped layer 10 and the cathode 3 to avoid the vapor deposition process of the cathode 3 from causing the self-doping of the N-type doped electron transport layer to improve The service life and working efficiency of the organic electroluminescent device 1.
  • the light-emitting functional layer 4 further includes a hole transport layer 12 disposed on the side of the light-emitting layer 5 close to the anode 2.
  • the hole transport layer 12 includes a P-type doped hole transport layer or an undoped hole transport layer. Floor.
  • the role of the hole transport layer 12 is to reduce the hole injection barrier and improve the hole injection efficiency.
  • the hole transport layer 12 includes a P-type doped hole transport layer or an undoped hole transport layer.
  • the P-type doped hole transport layer has better hole injection effect than the undoped hole transport layer.
  • the hole transport layer 12 is In the case of a P-type doped hole transport layer, the P-type doped hole transport layer and the light-emitting layer 5, the N-type doped electron transport layer and the P-type doped layer 9 form a PiNP structure, which can effectively reduce the organic electroluminescent device
  • the driving voltage of 1 improves the performance of the organic electroluminescent device 1.
  • an embodiment of the present application also provides an organic electroluminescent device 1.
  • the difference from the foregoing embodiment is that the PN junction layer 6 is provided on the side of the light-emitting layer 5 close to the anode 2.
  • the PN junction layer 6 forms an open circuit to prevent the anode 2 from injecting holes into the light-emitting layer 5 and balance the rate of carrier injection of the cathode 3 and the anode 2 into the light-emitting layer 5.
  • the migration rate of holes is greater than the migration rate of electrons, and the exciton recombination area of the organic electroluminescence device 1 will be close to the side of the cathode 3, and the recombination area is narrow, which is not conducive to the service life and operation of the organic electroluminescence device 1.
  • Efficiency improvement when the anode 2 is positively energized and the cathode 3 is negatively energized, the PN junction layer 6 forms an open circuit, which can suppress excessive injection of holes, so that the cathode 3 is injected into the light-emitting layer 5 and the anode 2 is injected into the light-emitting layer.
  • the holes in the layer 5 are in a balanced state, which is beneficial to improve the service life and working efficiency of the organic electroluminescent device 1.
  • the PN junction layer 6 includes a P-type doped layer 9 and an N-type doped layer 10; the P-type doped layer 9 is stacked on the N-type doped layer 10, and the N-type doped layer 10 is located Between the P-type doped layer 9 and the anode 2; the light-emitting function layer 4 further includes a hole transport layer 12, as shown in FIG. 8, the hole transport layer 12 is provided between the anode 2 and the N-type doped layer 10; or As shown in FIG. 9, the hole transport layer 12 is provided between the light-emitting layer 5 and the P-type doped layer 9.
  • the P-type doped layer 9 is equivalent to a P-type semiconductor
  • the N-type doped layer 10 is equivalent to an N-type semiconductor.
  • the contact surface between the P-type doped layer 9 and the N-type doped layer 10 forms a PN junction with rectifying properties.
  • the material of the P-type doped layer 9 and the N-type doped layer 10 includes but is not limited to organic small molecule materials
  • the material of the hole transport layer 12 includes but is not limited to organic small molecule materials.
  • a hole injection layer (not shown in the figure) may be provided on the side of the anode 2 close to the light-emitting layer 5.
  • the material of the hole injection layer includes but is not limited to organic small molecule materials. If the hole transport layer 12 also has holes For the function of hole injection and transport, no hole injection layer is required.
  • the contact surface between the P-type doped layer 9 and the N-type doped layer 10 forms a PN junction with rectifying performance.
  • the N-type doped layer 10 is arranged close to the anode 2. When the anode 2 is positively energized, the cathode 3 is connected. When negatively charged, the P-type doped layer 9 is connected to the negative electrode (cathode 3), and the N-type doped layer 10 is connected to the positive electrode (anode 2).
  • the PN junction forms an open circuit to prevent excessive injection of holes, so that the cathode 3 is injected into the light-emitting layer. The electrons of 5 and the holes injected into the light-emitting layer 5 by the anode 2 are in equilibrium.
  • the light-emitting functional layer 4 further includes an electron transport layer 11 disposed on the side of the light-emitting layer 5 close to the cathode 3, and the electron transport layer 11 includes an N-type doped electron transport layer or an undoped electron transport layer.
  • the material of the electron transport layer 11 includes but is not limited to organic small molecule materials.
  • the function of the electron transport layer 11 is to reduce the electron injection barrier and improve the electron injection efficiency.
  • the electron transport layer 11 includes an N-type doped electron transport layer or an undoped electron transport layer, wherein the N-type doped electron transport layer
  • the electron transport layer has a better effect of injecting electrons than the undoped electron transport layer, which can reduce the driving voltage required for electron injection and improve the performance of the organic electroluminescent device 1.
  • whether the electron transport layer 11 is doped is not done limit.
  • the embodiment of the present application also provides an organic electroluminescent device 1.
  • the PN junction layer 6 includes a P-type doped layer 9 and an N-type doped layer 10;
  • the doped layer 9 is stacked on the N-type doped layer 10, and the N-type doped layer 10 is located between the P-type doped layer 9 and the anode 2;
  • the P-type doped layer 9 includes a P-type doped hole transport layer Or P-type doped hole injection layer.
  • the P-type doped layer 9 is the composition structure of the PN junction layer 6, and is also the hole transport layer (specifically, the P-type doped hole transport layer) or the hole injection layer of the organic electroluminescent device 1.
  • the P-type doped hole injection layer which can realize the function of PN junction and the function of transporting holes; when the P-type doped layer 9 is a P-type doped hole transport layer, the N-type doped A hole injection layer can also be provided between the impurity layer 10 and the anode 2. If the P-type doped hole transport layer can simultaneously play the role of hole injection and transport, there is no gap between the N-type doped layer 10 and the anode 2.
  • a hole injection layer needs to be provided; when the P-type doped layer 9 is a P-type doped hole injection layer, a hole transport layer is also required between the P-type doped hole injection layer and the light-emitting layer 5 to improve the PN The hole injection efficiency of the junction.

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Abstract

本申请提供了一种有机电致发光器件，包括：阳极；阴极，与所述阳极相对设置；发光功能层，设置在所述阳极和所述阴极之间；其中，所述发光功能层包括发光层以及位于所述发光层一侧的PN结层；当所述阳极通正电，所述阴极通负电时，所述PN结层形成断路，以使所述阴极和所述阳极向所述发光层注入载流子的速率平衡。

Description

有机电致发光器件 技术领域
本申请涉及显示面板技术领域，尤其涉及一种有机电致发光器件。
 背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
有机发光二极管（Organic light Emitting Diode，OLED）拥有自发光，超轻薄，低功耗，高对比度，可应用于柔性显示的优点，受到了显示行业的广泛关注与研究。
应用于平板显示上的OLED大多为顶发射式OLED（Top-emitting OLED, TEOLED），当TEOLED中的电子和空穴的传输能力差异较大时，载流子（包括电子和空穴）的注入速率差异较大，使得器件的激子复合区域偏离发光层，且靠近传输能力较小的载流子一侧，且复合区域窄，不利于器件寿命与效率的继续提升。此外，采用P-i-N型OLED结构，能有效的降低器件电压，提升器件性能，其中，P型掺杂的空穴传输层与N型掺杂的电子传输层分别位于阳极与阴极一侧，中间为未作电性掺杂的发光层或发光层与激子（电子空穴复合结构）阻挡层的组合层。研究表明，阴极的蒸镀过程会造成N型掺杂的电子传输层的自掺杂，破坏N型掺杂的电子传输层的性能，而这种自掺杂效应会随着蒸镀金属种类、蒸镀环境、蒸镀速率等的变化而波动，造成器件性能不稳定。
综上所述，OLED器件存在载流子注入不平衡以及在阴极的蒸镀过程中N型掺杂的电子传输层的自掺杂引起的器件使用寿命与工作效率低的技术问题。
 技术问题
本申请提供有机电致发光器件，通过在发光功能层中设置具有整流性能的PN结层，解决了有机电致发光器件中载流子注入不平衡以及在阴极的蒸镀过程中N型掺杂电子传输层自掺杂引起的器件使用寿命与工作效率低的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请提供一种有机电致发光器件，包括：
阳极；
阴极，与所述阳极相对设置；以及
发光功能层，设置在所述阳极和所述阴极之间；
其中，所述发光功能层包括发光层以及位于所述发光层一侧的PN结层；当所述阳极通正电，所述阴极通负电时，所述PN结层形成断路，以使所述阴极和所述阳极向所述发光层注入载流子的速率平衡。
在本申请实施例所提供的有机电致发光器件中，所述PN结层设置在所述发光层靠近所述阴极的一侧，当所述阳极通正电，所述阴极通负电时，所述PN结层形成断路，以抑制所述阴极向所述发光层方向注入电子，使所述阴极和所述阳极向所述发光层注入载流子的速率平衡。
在本申请实施例所提供的有机电致发光器件中，所述PN结层包括P型掺杂层和N型掺杂层；所述P型掺杂层叠接在所述N型掺杂层上，且所述P型掺杂层位于所述N型掺杂层和所述阴极之间；所述发光功能层还包括电子传输层，所述电子传输层设置在所述阴极和所述P型掺杂层之间，或者，所述电子传输层设置在所述发光层和所述N型掺杂层之间。
在本申请实施例所提供的有机电致发光器件中，所述PN结层包括P型掺杂层和N型掺杂层；所述P型掺杂层叠接在所述N型掺杂层上，且所述P型掺杂层位于所述N型掺杂层和所述阴极之间；所述N型掺杂层包括N型掺杂电子传输层。
在本申请实施例所提供的有机电致发光器件中，所述发光功能层还包括设置在所述发光层靠近所述阳极一侧的空穴传输层，所述空穴传输层包括P型掺杂空穴传输层或者无掺杂空穴传输层。
在本申请实施例所提供的有机电致发光器件中，所述PN结层设置在所述发光层靠近所述阳极的一侧，当所述阳极通正电，所述阴极通负电时，所述PN结层形成断路，以抑制所述阳极向所述发光层方向注入空穴，使所述阴极和所述阳极向所述发光层注入载流子的速率平衡。
在本申请实施例所提供的有机电致发光器件中，所述PN结层包括P型掺杂层和N型掺杂层；所述P型掺杂层叠接在所述N型掺杂层上，且所述N型掺杂层位于所述P型掺杂层和所述阳极之间；所述发光功能层还包括空穴传输层，所述空穴传输层设置在所述阳极和所述N型掺杂层之间，或者，所述空穴传输层设置在所述发光层和所述P型掺杂层之间。
在本申请实施例所提供的有机电致发光器件中，所述PN结层包括P型掺杂层和N型掺杂层；所述P型掺杂层叠接在所述N型掺杂层上，且所述N型掺杂层位于所述P型掺杂层和所述阳极之间；所述P型掺杂层包括P型掺杂空穴传输层或者P型掺杂空穴注入层。
在本申请实施例所提供的有机电致发光器件中，所述发光功能层还包括设置在所述发光层靠近所述阴极一侧的电子传输层，所述电子传输层包括N型掺杂电子传输层或者无掺杂电子传输层。
在本申请实施例所提供的有机电致发光器件中，所述发光功能层还包括注入控制层，所述注入控制层的材料包括电子阻挡材料、空穴阻挡材料或激子阻挡材料，所述注入控制层设置在所述发光层和所述PN结层之间，或者，所述注入控制层设置在所述发光层远离所述PN结层一侧。
在本申请实施例所提供的有机电致发光器件中，所述有机电致发光器件还包括设置在所述阴极远离所述阳极一侧的耦合出光层。
在本申请实施例所提供的有机电致发光器件中，所述有机电致发光器件还包括设置在所述阴极靠近所述发光功能层一侧的电子注入层。
在本申请实施例所提供的有机电致发光器件中，PN结层的材料包括有机小分子材料。
本申请还提供一种有机电致发光器件，包括：
阳极；
阴极，与所述阳极相对设置；以及
发光功能层，设置在所述阳极和所述阴极之间；
其中，所述发光功能层包括发光层、位于所述发光层靠近所述阴极侧的PN结层以及位于所述发光层靠近所述阳极一侧的空穴传输层；所述PN结层包括P型掺杂层和N型掺杂层；所述P型掺杂层叠接在所述N型掺杂层上，且所述P型掺杂层位于所述N型掺杂层和所述阴极之间；所述N型掺杂层包括N型掺杂电子传输层；
当所述阳极通正电，所述阴极通负电时，所述PN结层形成断路，以抑制所述阴极向所述发光层方向注入电子，使所述阴极和所述阳极向所述发光层注入载流子的速率平衡。
 有益效果
本申请的有益效果为：本申请通过在发光功能层中设置PN结层，该PN结层具有整流性能，当阳极通正电，阴极通负电时，PN结层形成断路，可以抑制迁移速率快的载流子（电子或空穴）的过多注入，使阴极注入到发光层的电子和阳极注入到发光层的空穴处于平衡状态，有利于提高有机电致发光器件的使用寿命和工作效率；PN结层包括P型掺杂层以及与P型掺杂层叠接的N型掺杂层，P型掺杂层与N型掺杂层的接触面形成具有整流性能的PN结，P型掺杂层靠近阴极设置，N型掺杂层靠近阳极设置，当阳极通正电，阴极通负电时，P型掺杂层与负极连通，N型掺杂层与正极连通，PN结形成断路，使得有机电致发光器件中靠近PN结层的载流子的传输依靠PN结处的遂穿效应实现，总体上会减弱该载流子的传输与注入，从而起到抑制该载流子过多注入的作用，使阴极注入到发光层的电子和阳极注入到发光层的空穴处于平衡状态；当PN结层设置在阴极和发光层之间时，N型掺杂层包括N型掺杂电子传输层，P型掺杂层设置在N型掺杂电子传输层和阴极之间，可以有效的抑制金属阴极蒸镀过程中N型掺杂电子传输层的自掺杂，提高了有机电致发光器件的使用寿命和工作效率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的一种有机电致发光器件的结构示意图；
图2为本申请实施例提供的另一种有机电致发光器件的结构示意图；
图3为本申请实施例提供的另一种有机电致发光器件的结构示意图；
图4为本申请实施例提供的另一种有机电致发光器件的结构示意图；
图5为本申请实施例提供的另一种有机电致发光器件的结构示意图；
图6为本申请实施例提供的另一种有机电致发光器件的结构示意图；
图7为本申请实施例提供的另一种有机电致发光器件的结构示意图；
图8为本申请实施例提供的另一种有机电致发光器件的结构示意图；
图9为本申请实施例提供的另一种有机电致发光器件的结构示意图；
图10为本申请实施例提供的另一种有机电致发光器件的结构示意图。
 本发明的实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用来描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用来描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
下面结合附图和实施例对本申请作进一步说明。
如图1和图2所示，本申请实施例提供了一种有机电致发光器件1，包括：阳极2，与阳极2相对设置的阴极3，以及设置在阳极2和阴极3之间的发光功能层4；其中，发光功能层4包括发光层5以及位于发光层5一侧的PN结层6；当阳极2通正电，阴极3通负电时，PN结层6形成断路，以使阴极3和阳极2向发光层5注入载流子的速率平衡。
具体的，有机电致发光器件1还包括基板13，阳极2形成在基板13上。
具体的，发光层5的材料包括主客体掺杂材料，阳极2的材料包括但不仅限于高功函金属或金属氧化物，阴极3具有透光性，阴极3的材料包括但不仅限于金属或金属合金；载流子包括电子、空穴或激子，阴极3提供电子，电子从阴极3向发光层5迁移，阳极2提供空穴，空穴从阳极2向发光层5迁移，由阴极3注入的电子和由阳极2注入的空穴在发光层5中复合形成处于束缚能级的电子空穴对（即激子），激子辐射退激发发出光子，在发光层5产生可见光。当电子注入速率与空穴注入速率不平衡时，激子复合区域将靠近注入速率更慢的激子一侧，使得激子复合区域偏离发光层5，且复合区域窄，不利于有机电致发光器件1的使用寿命与工作效率的提升。
具体的，PN结层6包括PN结，PN结为P型半导体和 N型半导体的交界面附近的过渡区，PN结的特点为整流，即当P型半导体接正极，N型半导体接负极时，PN结导通；当P型半导体接负极，N型半导体接正极时，PN结不导通，不会传输载流子。PN结层6位于发光层5的一侧，可以位于发光层5靠近阴极3的一侧，也可以位于发光层5靠近阳极2的一侧。当然，PN结层6的位置由有机电致发光器件1中电子和空穴的迁移速率大小决定：当电子的迁移速率大于空穴的迁移速率时，PN结层6位于发光层5靠近阴极3的一侧，如图1所示；当空穴的迁移速率大于电子的迁移速率时，PN结层6位于发光层5靠近阳极2的一侧，如图2所示。
本实施例中，通过在发光功能层4中设置PN结层6，该PN结层6具有整流性能，当阳极2通正电，阴极3通负电时，PN结层6形成断路，使得靠近PN结层6的载流子的传输依靠PN结处的遂穿效应实现，可以抑制迁移速率快的载流子的过多注入，使阴极3注入到发光层5的电子和阳极2注入到发光层5的空穴处于平衡状态，有利于提高有机电致发光器件1的使用寿命和工作效率。
在一实施例中，如图3和图4所示，发光功能层4还包括注入控制层7，注入控制层7的材料包括电子阻挡材料、空穴阻挡材料或激子阻挡材料；注入控制层7设置在发光层5和PN结层6之间，如图3所示；或者，注入控制层7设置在发光层5远离PN结层6一侧，如图4所示。
本实施例中，注入控制层7起到辅助PN结层6调控有机电致发光器件1中的载流子的注入平衡的作用，注入控制层7可以阻挡电子、空穴或激子的迁移，注入控制层7的材料由注入控制层7的位置以及载流子的迁移速率共同决定，当注入控制层7设置在发光层5和PN结层6之间时，注入控制层7的材料包括电子阻挡材料、空穴阻挡材料或激子阻挡材料，当注入控制层7设置在发光层5远离PN结层6一侧时，注入控制层7的材料包括迁移速率更快的载流子的阻挡材料，最终目的是使注入到发光层5上的电子和空穴平衡，且避免发光层5上形成的激子反向能量传递导致的激子淬灭现象，提高了有机电致发光器件1的工作效率。
在一实施例中，如图1至图4所示，有机电致发光器件1还包括设置在阴极3远离阳极2一侧的耦合出光层8。本实施例中的耦合出光层8用于提高光取出率，减少有机电致发光器件1的出光损失。
如图5和图6所示，本申请实施例提供了一种有机电致发光器件1，与上述实施例不同的在于，PN结层6设置在发光层5靠近阴极3的一侧，当阳极2通正电，阴极3通负电时，PN结层6形成断路，以抑制阴极3向发光层5方向注入电子，使阴极3和阳极2向发光层5注入载流子的速率平衡。
具体的，电子的迁移速率大于空穴的迁移速率，例如大多数蓝光主体（BH）材料为电子型主体，传输电子的能力大于空穴，当有机电致发光器件1采用这类主体材料时，有机电致发光器件1的激子复合区域将靠近阳极2一侧，且复合区域窄，不利于有机电致发光器件1的使用寿命和工作效率的提升。本实施例中，当阳极2通正电，阴极3通负电时，PN结层6形成断路，可以抑制电子的过多注入，使阴极3注入到发光层5的电子和阳极2注入到发光层5的空穴处于平衡状态，有利于提高有机电致发光器件1的使用寿命和工作效率。
在一实施例中，PN结层6包括P型掺杂层9和N型掺杂层10；P型掺杂层9叠接在N型掺杂层10上，且P型掺杂层9位于N型掺杂层10和阴极3之间；发光功能层4还包括电子传输层11，如图5所示，电子传输层11设置在发光层5和N型掺杂层10之间；或者，如图6所示，电子传输层11设置在阴极3和P型掺杂层9之间。
具体的，P型掺杂层9相当于P型半导体，N型掺杂层10相当于N型半导体，P型掺杂层9与N型掺杂层10的接触面形成具有整流性能的PN结；P型掺杂层9和N型掺杂层10的材料包括但不仅限于有机小分子材料，电子传输层11的材料包括但不仅限于有机小分子材料。
具体的，阴极3靠近发光层5一侧还可以设置电子注入层（图中未示出），电子注入层的材料包括但不仅限于金属材料，若电子传输层11同时具备电子注入和传输的功能时则不需要再设置电子注入层。
本实施例中，P型掺杂层9与N型掺杂层10的接触面形成具有整流性能的PN结，P型掺杂层9靠近阴极3设置，当阳极2通正电，阴极3通负电时，P型掺杂层9与负极（阴极3）连通，N型掺杂层10与正极（阳极2）连通，PN结形成断路，使得电子的传输依靠PN结处的遂穿效应实现，总体上会减弱电子的传输与注入，从而起到抑制电子过多注入的作用，使阴极3注入到发光层5的电子和阳极2注入到发光层5的空穴处于平衡状态。
在一实施例中，发光功能层4还包括设置在发光层5靠近阳极2一侧的空穴传输层12，空穴传输层12包括P型掺杂空穴传输层或者无掺杂空穴传输层。
具体的，空穴传输层12的材料包括但不仅限于有机小分子材料。
本实施例中，空穴传输层12的作用是降低空穴的注入势垒，提高空穴的注入效率，空穴传输层12包括P型掺杂空穴传输层或者无掺杂空穴传输层，其中P型掺杂空穴传输层比无掺杂空穴传输层注入空穴的效果更好，可以减小空穴注入需要的驱动电压，提升有机电致发光器件1的性能，此处对空穴传输层12是否有掺杂不做限制。
如图7所示，本申请实施例还提供一种有机电致发光器件1，与上述实施例不同的在于，PN结层6包括P型掺杂层9和N型掺杂层10；P型掺杂层9叠接在N型掺杂层10上，且P型掺杂层9位于N型掺杂层10和阴极3之间；N型掺杂层10包括N型掺杂电子传输层。
本实施例中，N型掺杂层10为PN结层6的组成结构，同时也是有机电致发光器件1的电子传输层（具体为N型掺杂电子传输层），既可以实现PN结的功能也能实现传输电子的功能；另外，由于阴极3的蒸镀过程会造成N型掺杂电子传输层的自掺杂，破坏N型掺杂电子传输层的性能，但不会造成P型掺杂层的自掺杂，因此，P型掺杂层9设置在N型掺杂层10和阴极3之间可以避免阴极3的蒸镀过程造成N型掺杂电子传输层自掺杂，提高了有机电致发光器件1的使用寿命与工作效率。
在一实施例中，发光功能层4还包括设置在发光层5靠近阳极2一侧的空穴传输层12，空穴传输层12包括P型掺杂空穴传输层或者无掺杂空穴传输层。
本实施例中，空穴传输层12的作用是降低空穴的注入势垒，提高空穴的注入效率，空穴传输层12包括P型掺杂空穴传输层或者无掺杂空穴传输层，其中P型掺杂空穴传输层比无掺杂空穴传输层注入空穴的效果更好，此处对空穴传输层12是否有掺杂不做限制；并且，空穴传输层12为P型掺杂空穴传输层时，P型掺杂空穴传输层与发光层5、N型掺杂电子传输层和P型掺杂层9构成P-i-N-P结构，能有效的降低有机电致发光器件1的驱动电压，提升有机电致发光器件1的性能。
如图8和图9所示，本申请实施例还提供一种有机电致发光器件1，与上述实施例不同的在于，PN结层6设置在发光层5靠近阳极2的一侧，当阳极2通正电，阴极3通负电时，PN结层6形成断路，以抑制阳极2向发光层5方向注入空穴，使阴极3和阳极2向发光层5注入载流子的速率平衡。
具体的，空穴的迁移速率大于电子的迁移速率，有机电致发光器件1的激子复合区域将靠近阴极3一侧，且复合区域窄，不利于有机电致发光器件1的使用寿命和工作效率的提升。本实施例中，当阳极2通正电，阴极3通负电时，PN结层6形成断路，可以抑制空穴的过多注入，使阴极3注入到发光层5的电子和阳极2注入到发光层5的空穴处于平衡状态，有利于提高有机电致发光器件1的使用寿命和工作效率。
在一实施例中，PN结层6包括P型掺杂层9和N型掺杂层10；P型掺杂层9叠接在N型掺杂层10上，且N型掺杂层10位于P型掺杂层9和阳极2之间；发光功能层4还包括空穴传输层12，如图8所示，空穴传输层12设置在阳极2和N型掺杂层10之间；或者，如图9所示，空穴传输层12设置在发光层5和P型掺杂层9之间。
具体的，P型掺杂层9相当于P型半导体，N型掺杂层10相当于N型半导体，P型掺杂层9与N型掺杂层10的接触面形成具有整流性能的PN结；P型掺杂层9和N型掺杂层10的材料包括但不仅限于有机小分子材料，空穴传输层12的材料包括但不仅限于有机小分子材料。
具体的，阳极2靠近发光层5一侧还可以设置空穴注入层（图中未示出），空穴注入层的材料包括但不仅限于有机小分子材料，若空穴传输层12同时具备空穴注入和传输的功能时则不需要再设置空穴注入层。
本实施例中，P型掺杂层9与N型掺杂层10的接触面形成具有整流性能的PN结，N型掺杂层10靠近阳极2设置，当阳极2通正电，阴极3通负电时，P型掺杂层9与负极（阴极3）连通，N型掺杂层10与正极（阳极2)连通，PN结形成断路，抑制空穴过多注入，使阴极3注入到发光层5的电子和阳极2注入到发光层5的空穴处于平衡状态。
在一实施例中，发光功能层4还包括设置在发光层5靠近阴极3一侧的电子传输层11，电子传输层11包括N型掺杂电子传输层或者无掺杂电子传输层。
具体的，电子传输层11的材料包括但不仅限于有机小分子材料。
本实施例中，电子传输层11的作用是降低电子的注入势垒，提高电子的注入效率，电子传输层11包括N型掺杂电子传输层或者无掺杂电子传输层，其中N型掺杂电子传输层比无掺杂电子传输层注入电子的效果更好，可以减小电子注入需要的驱动电压，提升有机电致发光器件1的性能，此处对电子传输层11是否有掺杂不做限制。
如图10所示，本申请实施例还提供一种有机电致发光器件1，与上述实施例不同的在于，PN结层6包括P型掺杂层9和N型掺杂层10；P型掺杂层9叠接在N型掺杂层10上，且N型掺杂层10位于P型掺杂层9和阳极2之间；P型掺杂层9包括P型掺杂空穴传输层或者P型掺杂空穴注入层。
本实施例中，P型掺杂层9为PN结层6的组成结构，同时也是有机电致发光器件1的空穴传输层（具体为P型掺杂空穴传输层）或者空穴注入层（具体为P型掺杂空穴注入层），既可以实现PN结的功能也能实现传输空穴的功能；当P型掺杂层9为P型掺杂空穴传输层时，N型掺杂层10和阳极2之间还可以设置空穴注入层，若P型掺杂空穴传输层可以同时起到空穴注入和传输的作用，则N型掺杂层10和阳极2之间不需要设置空穴注入层；当P型掺杂层9为P型掺杂空穴注入层时，P型掺杂空穴注入层和发光层5之间还需设置空穴传输层，提高通过PN结的空穴的注入效率。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (16)

  1. 一种有机电致发光器件，包括：
    阳极；
    阴极，与所述阳极相对设置； 以及
    发光功能层，设置在所述阳极和所述阴极之间；
    其中，所述发光功能层包括发光层以及位于所述发光层一侧的PN结层；当所述阳极通正电，所述阴极通负电时，所述PN结层形成断路，以使所述阴极和所述阳极向所述发光层注入载流子的速率平衡。
  2. 如权利要求1所述的有机电致发光器件，其中，所述PN结层设置在所述发光层靠近所述阴极的一侧，当所述阳极通正电，所述阴极通负电时，所述PN结层形成断路，以抑制所述阴极向所述发光层方向注入电子，使所述阴极和所述阳极向所述发光层注入载流子的速率平衡。
  3. 如权利要求2所述的有机电致发光器件，其中，所述PN结层包括P型掺杂层和N型掺杂层；所述P型掺杂层叠接在所述N型掺杂层上，且所述P型掺杂层位于所述N型掺杂层和所述阴极之间；所述发光功能层还包括电子传输层，所述电子传输层设置在所述阴极和所述P型掺杂层之间，或者，所述电子传输层设置在所述发光层和所述N型掺杂层之间。
  4. 如权利要求3所述的有机电致发光器件，其中，所述发光功能层还包括设置在所述发光层靠近所述阳极一侧的空穴传输层，所述空穴传输层包括P型掺杂空穴传输层或者无掺杂空穴传输层。
  5. 如权利要求2所述的有机电致发光器件，其中，所述PN结层包括P型掺杂层和N型掺杂层；所述P型掺杂层叠接在所述N型掺杂层上，且所述P型掺杂层位于所述N型掺杂层和所述阴极之间；所述N型掺杂层包括N型掺杂电子传输层。
  6. 如权利要求5所述的有机电致发光器件，其中，所述发光功能层还包括设置在所述发光层靠近所述阳极一侧的空穴传输层，所述空穴传输层包括P型掺杂空穴传输层或者无掺杂空穴传输层。
  7. 如权利要求1所述的有机电致发光器件，其中，所述PN结层设置在所述发光层靠近所述阳极的一侧，当所述阳极通正电，所述阴极通负电时，所述PN结层形成断路，以抑制所述阳极向所述发光层方向注入空穴，使所述阴极和所述阳极向所述发光层注入载流子的速率平衡。
  8. 如权利要求7所述的有机电致发光器件，其中，所述PN结层包括P型掺杂层和N型掺杂层；所述P型掺杂层叠接在所述N型掺杂层上，且所述N型掺杂层位于所述P型掺杂层和所述阳极之间；所述发光功能层还包括空穴传输层，所述空穴传输层设置在所述阳极和所述N型掺杂层之间，或者，所述空穴传输层设置在所述发光层和所述P型掺杂层之间。
  9. 如权利要求8所述的有机电致发光器件，其中，所述发光功能层还包括设置在所述发光层靠近所述阴极一侧的电子传输层，所述电子传输层包括N型掺杂电子传输层或者无掺杂电子传输层。
  10. 如权利要求7所述的有机电致发光器件，其中，所述PN结层包括P型掺杂层和N型掺杂层；所述P型掺杂层叠接在所述N型掺杂层上，且所述N型掺杂层位于所述P型掺杂层和所述阳极之间；所述P型掺杂层包括P型掺杂空穴传输层或者P型掺杂空穴注入层。
  11. 如权利要求10所述的有机电致发光器件，其中，所述发光功能层还包括设置在所述发光层靠近所述阴极一侧的电子传输层，所述电子传输层包括N型掺杂电子传输层或者无掺杂电子传输层。
  12. 如权利要求1所述的有机电致发光器件，其中，所述发光功能层还包括注入控制层，所述注入控制层的材料包括电子阻挡材料、空穴阻挡材料或激子阻挡材料，所述注入控制层设置在所述发光层和所述PN结层之间，或者，所述注入控制层设置在所述发光层远离所述PN结层一侧。
  13. 如权利要求1所述的有机电致发光器件，其中，所述有机电致发光器件还包括设置在所述阴极远离所述阳极一侧的耦合出光层。
  14. 如权利要求1所述的有机电致发光器件，其中，所述有机电致发光器件还包括设置在所述阴极靠近所述发光功能层一侧的电子注入层。
  15. 如权利要求1所述的有机电致发光器件，其中，PN结层的材料包括有机小分子材料。
  16. 一种有机电致发光器件，包括：
    阳极；
    阴极，与所述阳极相对设置； 以及
    发光功能层，设置在所述阳极和所述阴极之间；
    其中，所述发光功能层包括发光层、位于所述发光层靠近所述阴极侧的PN结层以及位于所述发光层靠近所述阳极一侧的空穴传输层；所述PN结层包括P型掺杂层和N型掺杂层；所述P型掺杂层叠接在所述N型掺杂层上，且所述P型掺杂层位于所述N型掺杂层和所述阴极之间；所述N型掺杂层包括N型掺杂电子传输层；
    当所述阳极通正电，所述阴极通负电时，所述PN结层形成断路，以抑制所述阴极向所述发光层方向注入电子，使所述阴极和所述阳极向所述发光层注入载流子的速率平衡。
PCT/CN2019/106521 2019-06-24 2019-09-18 有机电致发光器件 Ceased WO2020258537A1 (zh)

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