WO2020253030A1 - Oled显示面板及其制备方法、显示装置 - Google Patents

Oled显示面板及其制备方法、显示装置 Download PDF

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Publication number
WO2020253030A1
WO2020253030A1 PCT/CN2019/115246 CN2019115246W WO2020253030A1 WO 2020253030 A1 WO2020253030 A1 WO 2020253030A1 CN 2019115246 W CN2019115246 W CN 2019115246W WO 2020253030 A1 WO2020253030 A1 WO 2020253030A1
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Prior art keywords
layer
display panel
oled display
encapsulation layer
scattering
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French (fr)
Inventor
夏晨
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/624,223 priority Critical patent/US20210328192A1/en
Publication of WO2020253030A1 publication Critical patent/WO2020253030A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present invention relates to the field of display technology, in particular to an OLED display panel, a preparation method thereof, and a display device.
  • OLED Organic Light Emitting Diode (Organic Light Emitting Diode) display technology
  • OLED products have received more and more attention and applications due to their light and thin, fast response, wide viewing angle, high contrast, and flexibility. They are mainly used in mobile phones, Flat panel, TV and other display fields.
  • the OLED display device specifically includes an OLED display panel, which from bottom to top includes a base layer 110, a TFT (thin film field effect transistor) driving layer 120, an OLED light emitting layer 130, a first inorganic encapsulation layer 140, The organic encapsulation layer 150, the second inorganic encapsulation layer 160, and the like.
  • the light emitting principle of OLED is to deposit the OLED light emitting layer 130 between two electrodes, apply current to the OLED light emitting layer 130, and make the OLED light emitting layer 130 emit light through carrier injection and recombination.
  • the internal quantum efficiency theoretically reaches 100%, but the external quantum efficiency of the OLED light-emitting layer 130 is still affected by waveguides, substrates, surface plasmons, etc. Limitations, and even the external quantum efficiency suffers to a large extent, in which the reflected light loss dominates. Therefore, how to improve the external quantum efficiency has become a key research project of related developers.
  • the object of the present invention is to provide an OLED display panel, a preparation method thereof, and a display device, wherein a buffer layer is provided on the first inorganic encapsulation layer of the OLED display panel, and a metal particle film layer is prepared on the buffer layer, Under the energy modification of the buffer layer, a scattering layer is formed, and an organic encapsulation layer is arranged on the scattering layer, so as to realize the use of the metal ion resonance effect to improve the light generated by the exciton decay in the emission layer and The absorbed active layer extracts incident light, thereby enhancing the external quantum efficiency.
  • the present invention provides an OLED display panel, which includes a base substrate, a thin film transistor layer and an organic light-emitting layer stacked on the base substrate in sequence, and a The first inorganic encapsulation layer on the organic light-emitting layer, wherein the OLED display panel further includes: a buffer layer disposed on the first inorganic encapsulation layer; a scattering layer, the scattering layer Is arranged on the buffer layer, the scattering layer includes a plurality of metal particles, the metal particles are used to reduce the absorption rate of light and enhance the scattering efficiency; the OLED display panel further includes a first organic encapsulation layer and A second inorganic encapsulation layer, the first organic encapsulation layer is disposed on the scattering layer; the second inorganic encapsulation layer is disposed on the first organic encapsulation layer; the metal particles are formed of silver ions; the The size of the metal particles ranges from 50 nanometers to 150 nanometers.
  • the present invention provides an OLED display panel.
  • the OLED display panel includes a base substrate, a thin film transistor layer and an organic light-emitting layer laminated and arranged on the base substrate in sequence, and a first inorganic encapsulation layer arranged on the organic light-emitting layer,
  • the OLED display panel further includes: a buffer layer, the buffer layer is disposed on the first inorganic encapsulation layer; a scattering layer, the scattering layer is disposed on the buffer layer, the scattering layer includes a plurality of Metal particles are used to reduce light absorption and enhance scattering efficiency.
  • the OLED display panel further includes a first organic encapsulation layer, and the first organic encapsulation layer is disposed on the scattering layer.
  • the OLED display panel further includes a second inorganic encapsulation layer, and the second inorganic encapsulation layer is disposed on the first organic encapsulation layer.
  • the metal particles are formed of silver ions.
  • the particle size of the metal particles is on the nanometer level.
  • the particle size of the metal particles ranges from 50 nanometers to 150 nanometers.
  • the material of the buffer layer is polyethylene dioxythiophene-polystyrene sulfur, and the thickness of the buffer layer is 1 to 1.5 ⁇ m.
  • the material of the first organic encapsulation layer is polymethyl methacrylate, and the thickness of the first organic encapsulation layer is 3-8 ⁇ m.
  • the material of the second inorganic encapsulation layer and the first inorganic encapsulation layer is silicon nitride or silicon oxide, and the material of the second inorganic encapsulation layer and the first inorganic encapsulation layer The thickness is 0.5 ⁇ 1 ⁇ m.
  • the present invention provides a method for manufacturing the above-mentioned OLED display panel.
  • the method includes: providing a base substrate on which a thin film transistor layer, an organic light-emitting layer, and a second substrate are sequentially formed.
  • An inorganic encapsulation layer a buffer layer is prepared by coating on the first inorganic encapsulation layer; a thin film layer of metal particles is prepared on the buffer layer by evaporation; a low-temperature annealing treatment is used to make the metal
  • the particle size of the metal particles in the particle film layer is increased by the energy modification of the buffer layer, and then the metal particle film layer becomes a scattering layer; inkjet printing is used to prepare a layer on the scattering layer
  • a first organic encapsulation layer and a second inorganic encapsulation layer is formed on the first organic encapsulation layer by chemical vapor deposition.
  • the present invention provides a display device including the above-mentioned OLED display panel.
  • the advantage of the present invention is that the OLED display panel of the present invention is provided with a buffer layer on the first inorganic encapsulation layer, and a metal particle film layer is prepared on the buffer layer, and under the energy modification of the buffer layer, a buffer layer is formed.
  • a scattering layer, and a first organic encapsulation layer is arranged on the scattering layer, so as to realize the use of the metal ion resonance effect to improve the extraction of the light generated by the exciton decay in the emitting layer and the incident light absorbed by the active layer , Thereby enhancing the external quantum efficiency.
  • FIG. 1 is a schematic diagram of the structure of an OLED display panel in the prior art.
  • FIG. 2 is a schematic structural diagram of an OLED display panel in an embodiment of the present invention.
  • FIG. 3 is a step diagram of the manufacturing method of the OLED display panel in the embodiment of the present invention.
  • 4A to 4F are process flow diagrams of the manufacturing method of the OLED display panel in the embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a display device in an embodiment of the present invention.
  • the embodiment of the present invention provides an OLED display panel and a display device. The detailed description will be given below.
  • the present invention provides an OLED display panel 200.
  • the OLED display panel 200 includes: a base substrate 210, a thin film transistor layer 220 and an organic light-emitting layer 230 stacked on the base substrate 210, and a thin-film transistor layer 230 disposed on the organic light-emitting layer 230
  • the first inorganic encapsulation layer 240 is provided.
  • the base substrate 210 may be a PI substrate, a glass substrate or a plastic substrate.
  • the specific structure of the thin film transistor layer 220 is well known to those skilled in the art, and will not be described in detail here.
  • the material of the first inorganic encapsulation layer 240 is silicon nitride or silicon oxide, and the thickness of the first inorganic encapsulation layer 240 is 0.5-1 ⁇ m.
  • the OLED display panel 200 further includes: a buffer layer 250, the buffer layer 250 is disposed on the first inorganic encapsulation layer 240; a scattering layer 260, the scattering layer 260 is disposed on the buffer layer 250,
  • the scattering layer 260 includes a plurality of metal particles 261, which are used to reduce the absorption rate of light and enhance the scattering efficiency.
  • the material of the buffer layer 250 is polyethylene dioxythiophene-polystyrene sulfur PEDOT:PSS, and the thickness of the buffer layer 250 is 1 ⁇ 1.5 ⁇ m.
  • the scattering layer 260 is disposed on the buffer layer 250, and the scattering layer 260 includes a plurality of metal particles 261.
  • the metal particles 261 may be formed of silver ions. Of course, they are not limited to silver ions, but may also be other metal ions. .
  • the particle size of the metal particles 261 is nanometer level, for example, 100 nanometers or less. When these metal particles 261 are subjected to an annealing treatment under the effect of energy modification on the surface of the buffer layer 250, their particle size increases. Therefore, the particle size of the metal particles 261 may range from 50 nanometers to 150 nanometers.
  • the present invention utilizes the metal ion resonance effect to improve the extraction of the light generated by the exciton decay in the emission layer and the incident light absorbed by the activation layer, thereby enhancing the external quantum efficiency.
  • the emission layer and the activation layer are arranged in the OLED packaging structure, and the emission layer is a transmission film layer from outside the cathode of the OLED to the air. The light loss in the transmission film layer is reduced, thereby improving light effectiveness.
  • the active layer is a film layer distributed on the light transmission path, the film layer contains the above-mentioned metal particles (nano-level silver ions), and the film layer can improve the extraction of incident light.
  • the OLED display panel 200 further includes a first organic encapsulation layer 270, and the first organic encapsulation layer 270 is disposed on the scattering layer 260.
  • the material of the first organic encapsulation layer 270 is polymethyl methacrylate PMMA, and the thickness of the first organic encapsulation layer 270 is 3-8 ⁇ m.
  • the first organic encapsulation layer 270 is used to flatten the scattering layer 260, and can also increase the path of water and oxygen penetration and delay the aging of the device.
  • the OLED display panel 200 further includes a second inorganic encapsulation layer 280, and the second inorganic encapsulation layer 280 is disposed on the first organic encapsulation layer 270.
  • the material of the second inorganic encapsulation layer 280 is silicon nitride or silicon oxide, and the thickness of the second inorganic encapsulation layer 280 is 0.5-1 ⁇ m.
  • FIG. 3 is a step diagram of the manufacturing method of the OLED display panel 200 in the embodiment of the present invention.
  • 4A to 4F are process flow diagrams of the manufacturing method of the OLED display panel 200 in the embodiment of the present invention.
  • the present invention provides a method for manufacturing the above-mentioned OLED display panel 200, and the method includes:
  • step S310 providing a base substrate, on which a thin film transistor layer, an organic light-emitting layer, and a first inorganic packaging layer are sequentially formed on the base substrate.
  • the base substrate 210 may be a PI substrate, a glass substrate or a plastic substrate.
  • the specific structure of the thin film transistor layer 220 is well known to those skilled in the art, and will not be described in detail here.
  • the first inorganic encapsulation layer 240 is formed on the organic light-emitting layer 230 by chemical vapor deposition.
  • the material of the first inorganic encapsulation layer 240 is silicon nitride or silicon oxide, and the thickness of the first inorganic encapsulation layer 240 is 0.5-1 ⁇ m.
  • step S320 prepare a buffer layer on the first inorganic encapsulation layer by coating.
  • the material of the buffer layer 250 is polyethylene dioxythiophene-polystyrene sulfur PEDOT:PSS, and the thickness of the buffer layer 250 is 1 ⁇ 1.5 ⁇ m.
  • step S330 preparing a thin film layer of metal particles on the buffer layer by evaporation.
  • the metal particles 261 are silver particles, and the particle size is nanometer level.
  • the thickness of the metal particle thin film layer (its number is 260, which is the same as the number of the scattering layer) is 10-12 nanometers.
  • step S340 Through the low-temperature annealing treatment, the metal particles in the metal particle film layer are increased in particle size under the energy modification of the buffer layer, and the metal particle film layer becomes A scattering layer.
  • the present invention utilizes the silver ion resonance effect to improve the extraction of the light generated by the exciton decay in the emission layer and the absorbed incident light of the activation layer, thereby enhancing the external quantum efficiency.
  • step S350 preparing a first organic encapsulation layer on the scattering layer by inkjet printing.
  • the first organic encapsulation layer 270 is disposed on the scattering layer 260 by means of inkjet printing IJP.
  • the material of the first organic encapsulation layer 270 is polymethyl methacrylate PMMA, and the thickness of the first organic encapsulation layer 270 is 3-8 ⁇ m.
  • the first organic encapsulation layer 270 is used to flatten the scattering layer 260, and can also increase the path of water and oxygen penetration and delay the aging of the device.
  • step S360 forming a second inorganic packaging layer on the first organic packaging layer by chemical vapor deposition.
  • the second inorganic encapsulation layer 280 is disposed on the first organic encapsulation layer.
  • the material of the second inorganic encapsulation layer 280 is silicon nitride or silicon oxide, and the thickness of the second inorganic encapsulation layer 280 is 0.5-1 ⁇ m.
  • step S310 to step S360 a novel OLED display panel 200 can be obtained.
  • the present invention provides a display device 500 including the above-mentioned OLED display panel 200.
  • the display device 500 is used in display devices such as LCD TVs, monitors, mobile phones, and tablet computers.
  • the advantage of the present invention is that the OLED display panel 200 of the present invention is provided with a buffer layer 250 on the first inorganic encapsulation layer 240, and a metal particle film layer is prepared on the buffer layer 250, and the energy modification of the buffer layer 250 Under the action, a scattering layer 260 is formed, and a first organic encapsulation layer 270 is arranged on the scattering layer 260, so as to realize the use of the metal ion resonance effect to improve the resistance to the light generated by the exciton decay in the emission layer and the The absorbing active layer extracts incident light, thereby enhancing the external quantum efficiency.
  • the subject of this application can be manufactured and used in industry and has industrial applicability.

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  • Inorganic Chemistry (AREA)
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Abstract

本发明披露一种OLED显示面板及其制备方法、显示装置，其中在OLED显示面板的第一无机封装层上设置一缓冲层，并且在所述缓冲层上制备一金属颗粒薄膜层，经由缓冲层的能量修饰作用下，形成一散射层，以及在所述散射层上设置一有机封装层，从而实现利用金属离子共振效应以改善对由发射层中的激子衰变所产生的光以及所吸收的活化层入射光的提取，从而增强外量子效率。

Description

OLED显示面板及其制备方法、显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及其制备方法、显示装置。
 背景技术
近年来，OLED（Organic Light Emitting Diode，有机发光二极管）显示技术发展突飞猛进，OLED产品由于具有轻薄、响应快、广视角、高对比度、可弯折等优点，受到了越来越多的关注和应用，其主要应用于手机、平板、电视等显示领域。
如附图1，OLED显示装置具体包括OLED显示面板，该OLED显示面板由下到上包括基底层110、TFT（薄膜场效应晶体管）驱动层120、OLED发光层130、第一无机封装层140、有机封装层150、第二无机封装层160等。OLED的发光原理是在两个电极之间沉积OLED发光层130，对OLED发光层130施加电流，通过载流子注入和复合而使OLED发光层130发光。
 技术问题
目前，随着OLED发光层130中磷光和热激活延迟荧光材料的发展，使得内量子效率理论上达到100%，但是OLED发光层130的外量子效率仍然受到波导、衬底、表面等离子体等的限制，以至外量子效率很大程度上受到损失，其中，反射光损失占主导地位。于是，如何改善外量子效率成为了相关研发者的重点研究项目。
 技术解决方案
本发明的目的，提供一种OLED显示面板及其制备方法、显示装置，其中在OLED显示面板的第一无机封装层上设置一缓冲层，并且在所述缓冲层上制备一金属颗粒薄膜层，经由缓冲层的能量修饰作用下，形成一散射层，以及在所述散射层上设置一有机封装层，从而实现利用金属离子共振效应以改善对由发射层中的激子衰变所产生的光以及所吸收的活化层入射光的提取，从而增强外量子效率。
根据本发明的一方面，本发明提供一种OLED显示面板，所述OLED显示面板包括一衬底基板、依次层叠设置在所述衬底基板上的一薄膜晶体管层和一有机发光层、一设置在所述有机发光层上的第一无机封装层，其中所述OLED显示面板还包括：一缓冲层，所述缓冲层设置在所述第一无机封装层上；一散射层，所述散射层设置在所述缓冲层上，所述散射层包括多个金属颗粒，所述金属颗粒用以降低对光的吸收率，并且增强散射效率；所述OLED显示面板还包括一第一有机封装层和第二无机封装层，所述第一有机封装层设置在所述散射层上；所述第二无机封装层设置在所述第一有机封装层上；所述金属颗粒由银离子形成；所述金属颗粒的粒径大小范围为50纳米至150纳米。
根据本发明的另一方面，本发明提供了一种OLED显示面板。所述一种OLED显示面板包括一衬底基板、一依次层叠设置在所述衬底基板上的薄膜晶体管层和一有机发光层、一设置在所述有机发光层上的第一无机封装层，所述OLED显示面板还包括：一缓冲层，所述缓冲层设置在所述第一无机封装层上；一散射层，所述散射层设置在所述缓冲层上，所述散射层包括多个金属颗粒，所述金属颗粒用以降低对光的吸收率，并且增强散射效率。
在本发明的一实施例中，所述OLED显示面板还包括一第一有机封装层，所述第一有机封装层设置在所述散射层上。
在本发明的一实施例中，所述OLED显示面板还包括一第二无机封装层，所述第二无机封装层设置在所述第一有机封装层上。
在本发明的一实施例中，所述金属颗粒由银离子形成。
在本发明的一实施例中，所述金属颗粒的粒径为纳米级，优选地，所述金属颗粒的粒径大小范围为50纳米至150纳米。
在本发明的一实施例中，所述缓冲层的材料为聚乙撑二氧噻吩-聚苯乙烯硫磺，所述缓冲层的厚度为1～1.5μm。
在本发明的一实施例中，所述第一有机封装层的材料为聚甲基丙烯酸甲酯，所述第一有机封装层的厚度为3～8μm。
在本发明的一实施例中，所述第二无机封装层和所述第一无机封装层的材料为氮化矽或氧化矽，所述第二无机封装层和所述第一无机封装层的厚度为0.5~1μm。
根据本发明的又一方面，本发明提供一种上述OLED显示面板的制备方法，所述方法包括：提供一衬底基板，在所述衬底基板上依次形成薄膜晶体管层、有机发光层和第一无机封装层；在所述第一无机封装层上采用涂布方式制备一缓冲层；在所述缓冲层上采用蒸镀方式制备一金属颗粒薄膜层；通过低温退火的处理，使得所述金属颗粒薄膜层中的金属颗粒在经过所述缓冲层的能量修饰作用下其粒径增大，进而所述金属颗粒薄膜层变为一散射层；在所述散射层上采用喷墨印刷方式制备一第一有机封装层；以及在所述第一有机封装层上利用化学气相沉积方式形成一第二无机封装层。
根据本发明的又一方面，本发明提供一种显示装置，其包括上述OLED显示面板。
 有益效果
本发明的优点在于，本发明所述OLED显示面板在第一无机封装层上设置一缓冲层，并且在所述缓冲层上制备一金属颗粒薄膜层，经由缓冲层的能量修饰作用下，形成一散射层，以及在所述散射层上设置一第一有机封装层，从而实现利用金属离子共振效应以改善对由发射层中的激子衰变所产生的光以及所吸收的活化层入射光的提取，从而增强外量子效率。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有技术的OLED显示面板的结构示意图。
图2是本发明的一实施例中的OLED显示面板的结构示意图。
图3是本发明所述实施例中的OLED显示面板的制备方法的步骤图。
图4A至图4F是本发明所述实施例中的OLED显示面板的制备方法的工艺流程图。
图5是本发明的一实施例中的显示装置的结构示意图。
 本发明的实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明的说明书和权利要求书以及上述附图中的术语“第一”、“第二”、“第三”等（如果存在）是用于区别类似的对象，而不必用于描述特定的顺序或先后次序。应当理解，这样描述的对象在适当情况下可以互换。此外，术语“包括”和“具有”以及他们的任何变形，意图在于覆盖不排他的包含。
在本专利文档中，下文论述的附图以及用来描述本发明公开的原理的各实施例仅用于说明，而不应解释为限制本发明公开的范围。所属领域的技术人员将理解，本发明的原理可在任何适当布置的系统中实施。将详细说明示例性实施方式，在附图中示出了这些实施方式的实例。此外，将参考附图详细描述根据示例性实施例的终端。附图中的相同附图标号指代相同的元件。
本发明说明书中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。
本发明实施例提供一种OLED显示面板及显示装置。以下将分别进行详细说明。
参阅图2所示，在本发明的一实施例中，本发明提供了一种OLED显示面板200。所述一种OLED显示面板200包括：一衬底基板210、一依次层叠设置在所述衬底基板210上的薄膜晶体管层220和一有机发光层230、一设置在所述有机发光层230上的第一无机封装层240。
其中，所述衬底基板210可以为PI基板、玻璃基板或塑料基板。所述薄膜晶体管层220的具体结构为本领域技术人员所熟知的，在此不再详述。
所述第一无机封装层240的材料为氮化矽或氧化矽，所述第一无机封装层240的厚度为0.5~1μm。
所述OLED显示面板200还包括：一缓冲层250，所述缓冲层250设置在所述第一无机封装层240上；一散射层260，所述散射层260设置在所述缓冲层250上，所述散射层260包括多个金属颗粒261，所述金属颗粒261用以降低对光的吸收率，并且增强散射效率。
具体地，所述缓冲层250的材料为聚乙撑二氧噻吩-聚苯乙烯硫磺PEDOT:PSS，所述缓冲层250的厚度为1～1.5μm。
所述散射层260设置在所述缓冲层250上，所述散射层260包括多个金属颗粒261，所述金属颗粒261可以由银离子形成，当然不仅仅限于银离子，也可以为其他金属离子。所述金属颗粒261的粒径为纳米级，例如为100纳米以下。当这些金属颗粒261在缓冲层250表面能量修饰作用下，经过退火处理后，其颗粒粒径增大，因此，所述金属颗粒261的粒径大小范围可以为50纳米至150纳米。于是，本发明利用金属离子共振效应以改善对由发射层中的激子衰变所产生的光以及所吸收的活化层入射光的提取，从而增强外量子效率。其中，所述发射层和所述活化层设置在OLED封装结构中，所述发射层是OLED阴极以外到空气之间的传输膜层，通过减少光在传输膜层内的光损失，从而改善光效率。所述活化层是分布在光的传输路径上的膜层，该膜层包含上述金属颗粒（纳米级的银离子），该膜层可以提高对入射光的提取。
继续参阅图2，所述OLED显示面板200还包括一第一有机封装层270，所述第一有机封装层270设置在所述散射层260上。所述第一有机封装层270的材料为聚甲基丙烯酸甲酯PMMA，所述第一有机封装层270的厚度为3～8μm。所述第一有机封装层270用于对散射层260起到平坦化作用，又可以起到增加水氧渗透的路径、延缓器件衰老的作用。
所述OLED显示面板200还包括一第二无机封装层280，所述第二无机封装层280设置在所述第一有机封装层270上。所述第二无机封装层280的材料为氮化矽或氧化矽，所述第二无机封装层280的厚度为0.5~1μm。
图3是本发明所述实施例中的OLED显示面板200的制备方法的步骤图。图4A至图4F是本发明所述实施例中的OLED显示面板200的制备方法的工艺流程图。
参阅图3所示，本发明提供一种上述OLED显示面板200的制备方法，所述方法包括：
结合图4A，步骤S310：提供一衬底基板，在所述衬底基板上依次形成薄膜晶体管层、有机发光层和第一无机封装层。
其中，所述衬底基板210可以为PI基板、玻璃基板或塑料基板。所述薄膜晶体管层220的具体结构为本领域技术人员所熟知的，在此不再详述。
通过化学气相沉积方式，在有机发光层230上形成第一无机封装层240。所述第一无机封装层240的材料为氮化矽或氧化矽，所述第一无机封装层240的厚度为0.5~1μm。
结合图4B，步骤S320：在所述第一无机封装层上采用涂布方式制备一缓冲层。
所述缓冲层250的材料为聚乙撑二氧噻吩-聚苯乙烯硫磺PEDOT:PSS，所述缓冲层250的厚度为1～1.5μm。
结合图4C，步骤S330：在所述缓冲层上采用蒸镀方式制备一金属颗粒薄膜层。
在本实施例中，所述金属颗粒261为银颗粒，且颗粒粒径为纳米级。所述金属颗粒薄膜层（其标号为260，与散射层的标号相同）的厚度为10～12纳米。
结合图4D，步骤S340：通过低温退火的处理，使得所述金属颗粒薄膜层中的金属颗粒在经过所述缓冲层的能量修饰作用下其粒径增大，进而所述金属颗粒薄膜层变为一散射层。
当这些银颗粒经过缓冲层250表面能量修饰作用下，经过退火处理后颗粒的粒径增大，于是这些银颗粒的粒径大小会超过100纳米，例如为120纳米、130纳米甚至150纳米。于是，本发明利用银离子共振效应以改善对由发射层中的激子衰变所产生的光以及所吸收的活化层入射光的提取，从而增强外量子效率。
结合图4E，步骤S350：在所述散射层上采用喷墨印刷方式制备一第一有机封装层。
通过喷墨打印IJP方式，所述第一有机封装层270设置在所述散射层260上。所述第一有机封装层270的材料为聚甲基丙烯酸甲酯PMMA，所述第一有机封装层270的厚度为3～8μm。所述第一有机封装层270用于对散射层260起到平坦化作用，又可以起到增加水氧渗透的路径、延缓器件衰老的作用。
结合图4F，步骤S360：在所述第一有机封装层上利用化学气相沉积方式形成一第二无机封装层。
所述第二无机封装层280设置在所述第一有机封装层上。所述第二无机封装层280的材料为氮化矽或氧化矽，所述第二无机封装层280的厚度为0.5~1μm。
于是经过步骤S310至步骤S360的实施，可以获得新型的OLED显示面板200。
参阅图5，根据本发明的又一方面，本发明提供一种显示装置500，其包括上述OLED显示面板200。所述显示装置500用于液晶电视、显示器、手机、平板电脑等显示装置。
本发明的优点在于，本发明所述OLED显示面板200在第一无机封装层240上设置一缓冲层250，并且在所述缓冲层250上制备一金属颗粒薄膜层，经由缓冲层250的能量修饰作用下，形成一散射层260，以及在所述散射层260上设置一第一有机封装层270，从而实现利用金属离子共振效应以改善对由发射层中的激子衰变所产生的光以及所吸收的活化层入射光的提取，从而增强外量子效率。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
 工业实用性
本申请的主题可以在工业中制造和使用，具备工业实用性。

Claims (11)

  1. 一种OLED显示面板，所述OLED显示面板包括一衬底基板、依次层叠设置在所述衬底基板上的一薄膜晶体管层和一有机发光层、一设置在所述有机发光层上的第一无机封装层，其中所述OLED显示面板还包括：一缓冲层，所述缓冲层设置在所述第一无机封装层上；一散射层，所述散射层设置在所述缓冲层上，所述散射层包括多个金属颗粒，所述金属颗粒用以降低对光的吸收率，并且增强散射效率；所述OLED显示面板还包括一第一有机封装层和第二无机封装层，所述第一有机封装层设置在所述散射层上；所述第二无机封装层设置在所述第一有机封装层上；所述金属颗粒由银离子形成；所述金属颗粒的粒径大小范围为50纳米至150纳米。
  2. 一种OLED显示面板，所述OLED显示面板包括一衬底基板、依次层叠设置在所述衬底基板上的一薄膜晶体管层和一有机发光层、一设置在所述有机发光层上的第一无机封装层，其中所述OLED显示面板还包括：一缓冲层，所述缓冲层设置在所述第一无机封装层上；一散射层，所述散射层设置在所述缓冲层上，所述散射层包括多个金属颗粒，所述金属颗粒用以降低对光的吸收率，并且增强散射效率。
  3. 根据权利要求2所述的OLED显示面板，其中所述OLED显示面板还包括一第一有机封装层，所述第一有机封装层设置在所述散射层上。
  4. 根据权利要求3所述的OLED显示面板，其中所述OLED显示面板还包括一第二无机封装层，所述第二无机封装层设置在所述第一有机封装层上。
  5. 根据权利要求2所述的OLED显示面板，其中所述金属颗粒由银离子形成。
  6. 根据权利要求2所述的OLED显示面板，其中所述金属颗粒的粒径为纳米级。
  7. 根据权利要求2所述的OLED显示面板，其中所述金属颗粒的粒径大小范围为50纳米至150纳米。
  8. 根据权利要求2所述的OLED显示面板，其中所述缓冲层的材料为聚乙撑二氧噻吩-聚苯乙烯硫磺，所述缓冲层的厚度为1～1.5μm。
  9. 根据权利要求3所述的OLED显示面板，其中所述第一有机封装层的材料为聚甲基丙烯酸甲酯，所述第一有机封装层的厚度为3～8μm。
  10. 根据权利要求4所述的OLED显示面板，其中所述第二无机封装层和所述第一无机封装层的材料为氮化矽或氧化矽，所述第二无机封装层和所述第一无机封装层的厚度为0.5~1μm。
  11. 一种如权利要求2所述的OLED显示面板的制备方法，其中所述方法包括：
    提供一衬底基板，在所述衬底基板上依次形成薄膜晶体管层、有机发光层和第一无机封装层；
    在所述第一无机封装层上采用涂布方式制备一缓冲层；
    在所述缓冲层上采用蒸镀方式制备一金属颗粒薄膜层；
    通过低温退火的处理，使得所述金属颗粒薄膜层中的金属颗粒在经过所述缓冲层的能量修饰作用下其粒径增大，进而所述金属颗粒薄膜层变为一散射层；
    在所述散射层上采用喷墨印刷方式制备一第一有机封装层；以及
    在所述第一有机封装层上利用化学气相沉积方式形成一第二无机封装层。
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