WO2020246115A1 - Electrostatic device and method for manufacturing electrostatic device - Google Patents

Electrostatic device and method for manufacturing electrostatic device Download PDF

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Publication number
WO2020246115A1
WO2020246115A1 PCT/JP2020/012458 JP2020012458W WO2020246115A1 WO 2020246115 A1 WO2020246115 A1 WO 2020246115A1 JP 2020012458 W JP2020012458 W JP 2020012458W WO 2020246115 A1 WO2020246115 A1 WO 2020246115A1
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WIPO (PCT)
Prior art keywords
fixed
substrate
electrostatic device
elastic support
movable
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PCT/JP2020/012458
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French (fr)
Japanese (ja)
Inventor
年吉　洋
浩章 本間
裕幸 三屋
Original Assignee
国立大学法人 東京大学
株式会社鷺宮製作所
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Application filed by 国立大学法人 東京大学, 株式会社鷺宮製作所 filed Critical 国立大学法人 東京大学
Priority to US17/615,153 priority Critical patent/US20220224253A1/en
Priority to EP20819353.2A priority patent/EP3965284A4/en
Priority to CN202080040763.2A priority patent/CN113924725A/en
Publication of WO2020246115A1 publication Critical patent/WO2020246115A1/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
    • B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
    • H02N1/06—Influence generators
    • H02N1/08—Influence generators with conductive charge carrier, i.e. capacitor machines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/03—Microengines and actuators
    • B81B2201/033—Comb drives
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/031—Anodic bondings

Definitions

  • the present invention relates to an electrostatic device and a method for manufacturing an electrostatic device.
  • an electrostatic device as described in Patent Document 1 is known.
  • the electrostatic device described in Patent Document 1 is manufactured from an SOI (Silicon On Insulator) substrate.
  • the SOI (Silicon On Insulator) substrate includes a silicon support layer, a BOX (Buried Oxide) layer of silicon oxide (SiO 2 ) formed on the support layer, and an active layer of silicon bonded on the BOX layer. Consists of.
  • the actuator portion or sensor portion of the electrostatic device is formed from the active layer, and the base material that supports the actuator portion or sensor portion is formed from the support layer.
  • the substrate cost is one of the factors hindering the cost reduction of the electrostatic device.
  • the electrostatic device includes a fixed portion, a movable portion, an elastic support portion that is formed integrally with the movable portion and elastically supports the movable portion, and the fixed portion and the above. It includes a glass base portion in which elastic support portions are anode-bonded in a separated state from each other.
  • the fixed portion and the movable portion are formed of silicon, and an electret is formed on at least one of the fixed portion and the movable portion. It is preferable to have it.
  • a fixed electrode is formed in the fixed portion, and a movable electrode facing the fixed electrode is formed in the movable portion. It is preferable that the capacitance of the fixed electrode and the movable electrode changes due to the displacement of the movable portion with respect to the fixed portion to generate electricity.
  • the method for manufacturing an electrostatic device according to the fourth aspect of the present invention is an electrostatic device manufacturing method for manufacturing an electrostatic device according to any one of the first to third aspects.
  • the fixed portion, the movable portion, and the elastic support portion are integrally formed with the substrate, and the base portion and the substrate are anodized to fix the fixed portion and the elastic support portion to the base portion.
  • the substrate is etched to separate the fixed portion and the elastic support portion from each other.
  • the cost of the electrostatic device can be reduced.
  • FIG. 1 is a plan view of the vibration power generation element.
  • FIG. 2 is a diagram showing a cross section taken along the line AA and a cross section taken along the line BB of FIG.
  • FIG. 3 is a diagram illustrating the first step.
  • FIG. 4 is a diagram illustrating a second step.
  • FIG. 5 is a diagram illustrating a third step.
  • FIG. 6 is a diagram showing a cross section taken along the line AA, a cross section taken along the line BB, and a cross section taken along the line CC of FIG.
  • FIG. 7 is a diagram illustrating a fourth step.
  • FIG. 8 is a diagram illustrating a fifth step.
  • FIG. 9 is a diagram illustrating a sixth step.
  • FIG. 10 is a diagram illustrating a seventh step.
  • FIG. 10 is a diagram illustrating a seventh step.
  • FIG. 11 is a diagram illustrating the eighth step.
  • FIG. 12 is a diagram illustrating a ninth step.
  • FIG. 13 is a diagram illustrating a tenth step.
  • FIG. 14 is a diagram showing a comparative example.
  • 15A and 15B are graphs showing the simulation results of vibration power generation in a comparative example, in which FIG. 15A shows a current and FIG. 15B shows an electric power.
  • FIG. 1 is a diagram showing an example of an electrostatic device, and is a plan view of the electrostatic vibration power generation element 1.
  • the vibration power generation element 1 includes a base portion 10, a fixed portion 11 provided on the base portion 10, and a movable portion 12.
  • a plurality of comb tooth electrodes 110 are formed on the pair of left and right fixing portions 11.
  • a plurality of comb tooth electrodes 120 are also formed on the movable portion 12 arranged between the pair of fixed portions 11.
  • the comb tooth electrodes 120 are arranged to face each other so as to mesh with the comb tooth electrodes 110.
  • the movable portion 12 is supported by four sets of elastic support portions 13, and when an external force is applied to the vibration power generation element 1, the movable portion 12 vibrates in the left-right direction (x direction) shown in the drawing.
  • Each elastic support portion 13 includes a fixed region 13a fixed on the base portion 10 and an elastic portion 13b that connects the fixed region 13a and the movable portion 12.
  • An electret is formed on at least one of the comb tooth electrodes 110 and 120, and the movable portion 12 vibrates left and right in the drawing to change the amount of engagement between the comb tooth electrode 110 and the comb tooth electrode 120 to generate power. ..
  • An electrode pad 111 is formed in the fixed portion 11, and an electrode pad 131 is also formed in the fixed region 13a of the elastic support portion 13. The generated power is output from the electrode pads 111 and 131.
  • FIG. 2A and 2B are views showing a cross section of FIG. 1, FIG. 2A shows a cross section taken along the line AA, and FIG. 2B shows a cross section taken along the line BB.
  • the fixed portion 11, the movable portion 12, and the elastic support portion 13 are formed from a Si substrate, and a SiO 2 film 202 containing ions of an alkali metal such as potassium is formed on the surfaces of the fixed portion 11, the movable portion 12, and the elastic support portion 13. Has been done.
  • An electret is formed on the SiO 2 film 202.
  • the fixing portion 11 and the fixing region 13a of the elastic support portion 13 are anode-bonded onto the base portion 10 formed of a glass substrate.
  • a recess 101 is formed in the base portion 10.
  • the fixed portion 11 and the fixed region 13a are separated from each other by a separation groove g1, and the fixed portion 11, the elastic support portion 13, and the movable portion 12 are electrically insulated from each other.
  • the separation groove g2 shown in FIG. 2B is for electrically separating the pair of left and right fixing portions 11.
  • the movable portion 12 is elastically supported above the recess 101 by the elastic support portion 13.
  • a metal layer 102 is formed on the back surface of the base portion 10.
  • the comb tooth electrode 110 of the fixing portion 11 is also arranged above the recess 101 so as to mesh with the comb tooth electrode 120 of the movable portion 12.
  • FIG. 3 to 16 are diagrams showing an example of a manufacturing procedure of the vibration power generation element 1.
  • a SiN film 201 is formed on both the front and back surfaces of the Si substrate 200 by LP-CVD.
  • 4A and 4B are views for explaining the second step, FIG. 4A is a plan view, and FIG. 4B is a sectional view taken along the line AA.
  • the SiN film 201 on the surface side is etched by dry etching to form the patterns P1 and P2 for forming the electrode pads 111 and 113, and the patterns P3 and P4 for forming the separation grooves g1 and g2. And form.
  • FIG. 5 and 6 are views for explaining the third step, FIG. 5 shows a plan view, FIG. 6A is a sectional view taken along the line AA, FIG. 6B is a sectional view taken along the line CC, and FIG. (C) shows a sectional view taken along line BB.
  • an Al (aluminum) mask pattern (not shown) for forming the fixing portion 11, the movable portion 12, and the elastic support portion 13 is formed on the surface side of the Si substrate 200, and the Al mask pattern is used.
  • Etching is performed so as to penetrate the Si substrate 200 and the SiN film 201 by the Deep-RIE.
  • the structure included in the illustrated region D of FIG. 5 is formed in the fixed portion 11, the movable portion 12, and the elastic support portion 13. Specifically, the fixed portion 11, the movable portion 12, and the elastic support portion 13 of the portion where the comb tooth electrodes 110 and 210 are formed are formed.
  • Region D in FIG. 5 shows an upper region of the recess 101 in FIG.
  • FIG. 7A and 7B are views for explaining the fourth step
  • FIG. 7A is a sectional view taken along the line AA
  • FIG. 7B is a sectional view taken along the line CC
  • FIG. 7C is a sectional view taken along the line BB.
  • the figure is shown.
  • etching for forming the separation grooves g1 and g2 is performed by Deep-RIE.
  • the separation grooves g1 and g2 are formed at the positions of the patterns P3 and P4 (see FIG. 4).
  • the separation grooves g1 and g2 are not completely separated, and etching is performed from the back surface side of the substrate to a depth such that the entire Si substrate 200 is integrally maintained (so-called half etching).
  • FIG. 8A and 8B are views for explaining the fifth step, FIG. 8A shows a plan view, and FIG. 8B shows a sectional view taken along the line AA.
  • a SiO 2 film 202 containing ions of an alkali metal such as potassium is formed on the exposed surface of the Si substrate 200.
  • FIG. 9A and 9B are views for explaining the sixth step, FIG. 9A shows a plan view, and FIG. 9B shows a sectional view taken along the line AA.
  • the SiN film 201 on the surface side of the substrate is removed.
  • FIG. 10A and 10B are views for explaining the seventh step, FIG. 10A shows a plan view, and FIG. 10B shows a cross-sectional view.
  • the recess 101 is formed in the glass substrate 300 for forming the base portion 10.
  • the step dimension H between the bottom surface of the recess 101 and the end surface of the frame portion 103 is set to a dimension (for example, several tens of ⁇ m) in which the vibrating movable portion 12 does not interfere.
  • a glass substrate used for anode bonding for example, a glass substrate containing sodium is used.
  • FIG. 11A and 11B are views for explaining the eighth step, FIG. 11A shows a plan view, and FIG. 11B shows a cross-sectional view.
  • a metal layer 102 such as an aluminum vapor deposition film is formed on the back surface side of the base portion 10.
  • the metal layer 102 on the back surface side is formed to disperse the electric field during the anode bonding process over the entire surface of the glass substrate 300.
  • the metal layer 102 is not indispensable because the anode bonding is possible without the metal layer 102.
  • a base portion made of the glass substrate shown in FIG. 11 is formed on the back surface side of the Si substrate 200 (see FIG. 9) on which the fixing portion 11, the movable portion 12, and the elastic support portion 13 are formed. 10 is anodized.
  • the base portion 10 is placed on the heater 40, and the Si substrate 200 on which the fixed portion 11, the movable portion 12, and the elastic support portion 13 are formed is laminated on the base portion 10.
  • the temperature of the heater 40 is set to a temperature at which the thermal diffusion of sodium ions in the glass substrate becomes sufficiently active (for example, 500 ° C. or higher).
  • the voltage V1 of the Si substrate 200 with reference to the heater 40 is set to, for example, 400 V or more.
  • the silicon substrate (Si substrate 200) and the glass substrate (base portion 10) are joined with an anode, the laminate of the silicon substrate and the glass substrate is heated, and the silicon substrate side is used as an anode to form a laminate with several hundred voltages. Apply a DC voltage of about. Sodium ions in the glass substrate move to the negative potential side, and a SiO ⁇ space charge layer (sodium ion-deficient layer) is formed on the glass substrate side of the joint surface between the glass substrate and the silicon substrate. As a result, the glass substrate and the silicon substrate are joined by electrostatic attraction.
  • FIG. 13A and 13B are views for explaining the tenth step
  • FIG. 13A is a sectional view taken along the line AA
  • FIG. 13B is a sectional view taken along the line CC
  • FIG. 13C is a sectional view taken along the line BB.
  • the Si substrate 200 anode-bonded to the base portion 10 was etched halfway by Deep-RIE to penetrate the non-penetrating separation grooves g1 and g2 shown in FIG. 7 through the front and back surfaces of the Si substrate 200. Make it a state.
  • the fixed portion 11 and the elastic support portion 13 that elastically supports the movable portion 12 are completely separated.
  • the hole-shaped electrode pads 111 and 131 are formed.
  • the fixed portion 11, the movable portion 12, and the elastic support portion 13 are formed of a silicon substrate, and the fixed portion 11 and the elastic support portion 13 are fixed to the base portion 10 formed of the glass substrate. It was configured to be. Therefore, unlike the electrostatic device described in Patent Document 1, an expensive SOI substrate is not used, so that the cost can be reduced.
  • FIG. 14 shows a comparative example.
  • the vibration power generation element 50 of the comparative example is formed by using an SOI substrate.
  • the fixed portion 51, the movable portion 52, and the elastic support portion 13 (not shown) of the vibration power generation element 50 are formed on the active layer 61 which is the upper silicon layer of the SOI substrate, and the base portion 53 is formed on the support layer 63 which is the lower silicon layer. Will be done.
  • An electret 520 is formed on the comb tooth electrode of the movable portion 52.
  • the active layer 61 and the support layer 63 are provided via the BOX layer 62 made of SiO 2 , the parasitic capacitances Cs1 and Cs2 generated between the active layer 61 and the support layer 63 generate power for the vibration power generation element 50. It will adversely affect the power generation.
  • the capacitances C1 and C2 between the fixed portion 51 and the comb tooth electrodes of the movable portion 52 change, and alternating current due to the change in the capacitances C1 and C2.
  • the current is output as the terminal current I1.
  • a part of the current I3 flows through the parasitic capacitances Cs1 and Cs2, and the remaining current I2 flows through the load resistor R connected to the vibration power generation element 50.
  • FIG. 15 shows the simulation result of power generation by the vibration power generation element 50
  • FIG. 15A shows the currents I2 and I3
  • FIG. 15B shows the power W2 and the parasitic capacitance consumed by the load resistor R.
  • the electric power W3 that goes in and out of Cs1 is shown.
  • the phase of the current of the parasitic capacitance Cs1 is 90 degrees ahead of the terminal voltage.
  • the power W3 that goes in and out of the parasitic capacitance Cs1 is reactive power that is not taken out to the outside. The same applies to the electric power that goes in and out of the parasitic capacitance Cs2.
  • the reactive power W3 increases, and the active power W2, which is the power consumed by the load resistor R, decreases.
  • the vibration power generation element 1 of the present embodiment since the fixed portion 11 and the movable portion 12 formed of silicon are joined to the base portion 10 formed of the glass substrate, it is possible to prevent the occurrence of parasitic capacitance. it can. As a result, it is possible to prevent the generation of reactive power due to the parasitic capacitance, and the generated power can be consumed by the load resistor R without waste.
  • vibration power generation element 50 is formed from the SOI substrate, it is the same as the case where the base portion 10 of the glass substrate is adopted by making the thickness of the BOX layer thicker than before and reducing the parasitic capacitance. It is possible to reduce reactive power.
  • the vibration power generation element 1 which is an electrostatic device is formed integrally with the fixed portion 11, the movable portion 12, and the movable portion 12, and is elastically supported to elastically support the movable portion 12.
  • a portion 13 and a glass base portion 10 in which the fixing portion 11 and the elastic support portion 13 are anodic-bonded in a separated state are provided. Therefore, the cost can be reduced as compared with the vibration power generation element 50 manufactured by using the SOI substrate.
  • the vibration power generation element 1 which is an electrostatic device has been described as an example, but it is applied not only to the vibration power generation element 1 but also to an actuator, a sensor, or the like as described in Patent Document 1.
  • the actuator and the sensor are manufactured from a silicon substrate, and they are supported by a glass base portion. By doing so, in addition to cost reduction, it is possible to suppress parasitic capacitance. If it has electrical conductivity and the coefficient of linear expansion is sufficiently consistent with that of the glass substrate, an actuator, a sensor, or the like can be formed not only by using a silicon substrate but also by using another glass substrate or a glass substrate on which a silicon thin film is formed. You may.
  • the fixed portion 11 and the movable portion 12 may be formed of silicon, and an electret may be formed on at least one of the fixed portion 11 and the movable portion 12.
  • a comb tooth electrode 110 which is a fixed electrode is formed in a fixed portion 11, and a movable portion 12 is a movable electrode facing the comb tooth electrode 110.
  • a certain comb tooth electrode 120 is formed, and an electlet is further formed on at least one of the fixed portion 11 and the movable portion 12, and the electrostatic capacitance between the comb tooth electrode 110 and the comb tooth electrode 120 due to the displacement of the movable portion 12 with respect to the fixed portion 11. Changes to generate power.
  • the base portion 10 is made of glass, in addition to the cost reduction described above, it is possible to prevent the generation of parasitic capacitances Cs1 and Cs2 in the vibration power generation element 50 using the SOI substrate shown in FIG. 14, and the reactive power due to the parasitic capacitance can be prevented. It is possible to prevent the occurrence of W3.
  • the fixed portion 11, the movable portion 12, and the elastic support portion 13 are integrally formed with a substrate, for example, a Si substrate 200, and a glass base portion 10 and a Si substrate are formed.
  • the fixed portion 11 and the elastic support portion 13 are fixed to the glass base portion 10 by anodizing the 200, and the Si substrate 200 is etched to separate the fixed portion 11 and the elastic support portion 13 from each other to separate the fixed portion 11 and the elastic support portion 13.
  • the 11 and the movable portion 12 are electrically separated.
  • the Si substrate 200 in which the fixed portion 11, the movable portion 12, and the elastic support portion 13 are integrated is anodic-bonded to the base portion 10 and anodic-bonded. Since they are separated later, they can be joined to the base portion 10 while maintaining the positional relationship between the wafer-level fixed portion 11, the movable portion 12, and the elastic support portion 13.

Abstract

This vibration power generation element includes a fixed part, a movable part, an elastic support part that is integrally formed with the movable part and that elastically supports the movable part, and a glass base part in which the fixed part and the elastic support part are anodically bonded to each other in a separated state.

Description

静電型デバイスおよび静電型デバイス製造方法Electrostatic device and method of manufacturing electrostatic device
　本発明は、静電型デバイスおよび静電型デバイス製造方法に関する。 The present invention relates to an electrostatic device and a method for manufacturing an electrostatic device.
　静電型デバイスとして、例えば、特許文献１に記載のような静電型デバイスが知られている。特許文献１に記載の静電型デバイスは、ＳＯＩ（Silicon On Insulator）基板から製作されている。ＳＯＩ（Silicon On Insulator）基板は、シリコンの支持層と、支持層上に形成されたシリコン酸化物（ＳｉＯ２）のＢＯＸ（Buried Oxide）層と、ＢＯＸ層上に接合されたシリコンの活性層とから成る。静電型デバイスのアクチュエータ部あるいはセンサ部は活性層から形成され、アクチュエータ部あるいはセンサ部を支持する基材は支持層から形成される。 As the electrostatic device, for example, an electrostatic device as described in Patent Document 1 is known. The electrostatic device described in Patent Document 1 is manufactured from an SOI (Silicon On Insulator) substrate. The SOI (Silicon On Insulator) substrate includes a silicon support layer, a BOX (Buried Oxide) layer of silicon oxide (SiO 2 ) formed on the support layer, and an active layer of silicon bonded on the BOX layer. Consists of. The actuator portion or sensor portion of the electrostatic device is formed from the active layer, and the base material that supports the actuator portion or sensor portion is formed from the support layer.
日本国特開２０１６－５９１９１号公報Japanese Patent Application Laid-Open No. 2016-59191
　しかしながら、上述の静電型デバイスでは、デバイス製作用の基板として高価なＳＯＩ基板を用いているので、基板コストが静電型デバイスのコスト低減を阻害する要因の一つとなっている。 However, in the above-mentioned electrostatic device, since an expensive SOI substrate is used as a substrate for device manufacturing, the substrate cost is one of the factors hindering the cost reduction of the electrostatic device.
　本発明の第１の態様によると、静電型デバイスは、固定部と、可動部と、前記可動部と一体に形成され、前記可動部を弾性支持する弾性支持部と、前記固定部および前記弾性支持部が互いに分離状態で陽極接合されているガラス製のベース部と、を備える。
　本発明の第２の態様によると、第１の態様の静電型デバイスにおいて、前記固定部および前記可動部はシリコンで形成され、前記固定部および前記可動部の少なくとも一方にエレクトレットが形成されているのが好ましい。
　本発明の第３の態様によると、第２の態様の静電型デバイスにおいて、前記固定部には固定電極が形成され、前記可動部には前記固定電極と対向する可動電極が形成され、前記固定部に対する前記可動部の変位により前記固定電極と前記可動電極との静電容量が変化して発電を行うのが好ましい。
　本発明の第４の態様による静電型デバイス製造方法は、第１の態様から第３の態様までのいずれか一の態様の静電型デバイスを製造するための静電型デバイス製造方法であって、前記固定部、前記可動部および前記弾性支持部を基板に一体状態で形成し、前記ベース部と前記基板とを陽極接合して前記固定部および前記弾性支持部を前記ベース部に固定し、前記基板をエッチングして前記固定部と前記弾性支持部とを互いに分離する。 According to the first aspect of the present invention, the electrostatic device includes a fixed portion, a movable portion, an elastic support portion that is formed integrally with the movable portion and elastically supports the movable portion, and the fixed portion and the above. It includes a glass base portion in which elastic support portions are anode-bonded in a separated state from each other.
According to the second aspect of the present invention, in the electrostatic device of the first aspect, the fixed portion and the movable portion are formed of silicon, and an electret is formed on at least one of the fixed portion and the movable portion. It is preferable to have it.
According to the third aspect of the present invention, in the electrostatic device of the second aspect, a fixed electrode is formed in the fixed portion, and a movable electrode facing the fixed electrode is formed in the movable portion. It is preferable that the capacitance of the fixed electrode and the movable electrode changes due to the displacement of the movable portion with respect to the fixed portion to generate electricity.
The method for manufacturing an electrostatic device according to the fourth aspect of the present invention is an electrostatic device manufacturing method for manufacturing an electrostatic device according to any one of the first to third aspects. The fixed portion, the movable portion, and the elastic support portion are integrally formed with the substrate, and the base portion and the substrate are anodized to fix the fixed portion and the elastic support portion to the base portion. , The substrate is etched to separate the fixed portion and the elastic support portion from each other.
　本発明によれば、静電型デバイスのコスト低減を図ることができる。 According to the present invention, the cost of the electrostatic device can be reduced.
図１は、振動発電素子の平面図である。FIG. 1 is a plan view of the vibration power generation element. 図２は、図１のＡ－Ａ断面およびＢ－Ｂ断面を示す図である。FIG. 2 is a diagram showing a cross section taken along the line AA and a cross section taken along the line BB of FIG. 図３は、第１の工程を説明する図である。FIG. 3 is a diagram illustrating the first step. 図４は、第２の工程を説明する図である。FIG. 4 is a diagram illustrating a second step. 図５は、第３の工程を説明する図である。FIG. 5 is a diagram illustrating a third step. 図６は、図５のＡ－Ａ断面、Ｂ－Ｂ断面、Ｃ－Ｃ断面を示す図である。FIG. 6 is a diagram showing a cross section taken along the line AA, a cross section taken along the line BB, and a cross section taken along the line CC of FIG. 図７は、第４の工程を説明する図である。FIG. 7 is a diagram illustrating a fourth step. 図８は、第５の工程を説明する図である。FIG. 8 is a diagram illustrating a fifth step. 図９は、第６の工程を説明する図である。FIG. 9 is a diagram illustrating a sixth step. 図１０は、第７の工程を説明する図である。FIG. 10 is a diagram illustrating a seventh step. 図１１は、第８の工程を説明する図である。FIG. 11 is a diagram illustrating the eighth step. 図１２は、第９の工程を説明する図である。FIG. 12 is a diagram illustrating a ninth step. 図１３は、第１０の工程を説明する図である。FIG. 13 is a diagram illustrating a tenth step. 図１４は、比較例を示す図である。FIG. 14 is a diagram showing a comparative example. 図１５は、比較例における振動発電のシミュレーション結果を示すグラフであり、（ａ）は電流を示し、（ｂ）は電力を示す。15A and 15B are graphs showing the simulation results of vibration power generation in a comparative example, in which FIG. 15A shows a current and FIG. 15B shows an electric power.
　以下、図を参照して本発明を実施するための形態について説明する。図１は静電型デバイスの一例を示す図であり、静電型の振動発電素子１の平面図である。振動発電素子１は、ベース部１０と、ベース部１０上に設けられた固定部１１と、可動部１２とを備えている。左右一対の固定部１１には複数の櫛歯電極１１０がそれぞれ形成されている。一対の固定部１１間に配置された可動部１２にも、複数の櫛歯電極１２０が形成されている。櫛歯電極１２０は、櫛歯電極１１０と噛合するように対向配置されている。 Hereinafter, a mode for carrying out the present invention will be described with reference to the drawings. FIG. 1 is a diagram showing an example of an electrostatic device, and is a plan view of the electrostatic vibration power generation element 1. The vibration power generation element 1 includes a base portion 10, a fixed portion 11 provided on the base portion 10, and a movable portion 12. A plurality of comb tooth electrodes 110 are formed on the pair of left and right fixing portions 11. A plurality of comb tooth electrodes 120 are also formed on the movable portion 12 arranged between the pair of fixed portions 11. The comb tooth electrodes 120 are arranged to face each other so as to mesh with the comb tooth electrodes 110.
　可動部１２は４組の弾性支持部１３により支持されており、振動発電素子１に外力が加わると、可動部１２が図示左右方向（ｘ方向）に振動する。各弾性支持部１３は、ベース部１０上に固定された固定領域１３ａ、および、固定領域１３ａと可動部１２とを連結する弾性部１３ｂを備えている。櫛歯電極１１０，１２０の少なくとも一方にはエレクトレットが形成されており、可動部１２が図示左右に振動して櫛歯電極１１０と櫛歯電極１２０との噛合量が変化することで発電が行われる。固定部１１には電極パッド１１１が形成され、弾性支持部１３の固定領域１３ａにも電極パッド１３１が形成されている。発電された電力は電極パッド１１１、１３１から出力される。 The movable portion 12 is supported by four sets of elastic support portions 13, and when an external force is applied to the vibration power generation element 1, the movable portion 12 vibrates in the left-right direction (x direction) shown in the drawing. Each elastic support portion 13 includes a fixed region 13a fixed on the base portion 10 and an elastic portion 13b that connects the fixed region 13a and the movable portion 12. An electret is formed on at least one of the comb tooth electrodes 110 and 120, and the movable portion 12 vibrates left and right in the drawing to change the amount of engagement between the comb tooth electrode 110 and the comb tooth electrode 120 to generate power. .. An electrode pad 111 is formed in the fixed portion 11, and an electrode pad 131 is also formed in the fixed region 13a of the elastic support portion 13. The generated power is output from the electrode pads 111 and 131.
　図２は図１の断面を示す図であり、図２（ａ）はＡ－Ａ断面を、図２（ｂ）はＢ－Ｂ断面を示している。固定部１１，可動部１２および弾性支持部１３はＳｉ基板から形成され、固定部１１，可動部１２および弾性支持部１３の表面にはカリウム等のアルカリ金属のイオンを含むＳｉＯ２膜２０２が形成されている。このＳｉＯ２膜２０２にエレクトレットが形成される。固定部１１と弾性支持部１３の固定領域１３ａとは、ガラス基板で形成されたベース部１０上に陽極接合される。ベース部１０には凹部１０１が形成されている。 2A and 2B are views showing a cross section of FIG. 1, FIG. 2A shows a cross section taken along the line AA, and FIG. 2B shows a cross section taken along the line BB. The fixed portion 11, the movable portion 12, and the elastic support portion 13 are formed from a Si substrate, and a SiO 2 film 202 containing ions of an alkali metal such as potassium is formed on the surfaces of the fixed portion 11, the movable portion 12, and the elastic support portion 13. Has been done. An electret is formed on the SiO 2 film 202. The fixing portion 11 and the fixing region 13a of the elastic support portion 13 are anode-bonded onto the base portion 10 formed of a glass substrate. A recess 101 is formed in the base portion 10.
　固定部１１と固定領域１３ａとは分離溝ｇ１により互いに分離されており、固定部１１と弾性支持部１３および可動部１２とは電気的に絶縁されている。なお、図２（ｂ）に示す分離溝ｇ２は、左右一対の固定部１１を電気的に分離するためのものである。可動部１２は、弾性支持部１３によって凹部１０１の上方に弾性支持されている。ベース部１０の裏面にはメタル層１０２が形成されている。また、固定部１１の櫛歯電極１１０も、凹部１０１の上方に可動部１２の櫛歯電極１２０と噛合するように配置されている。 The fixed portion 11 and the fixed region 13a are separated from each other by a separation groove g1, and the fixed portion 11, the elastic support portion 13, and the movable portion 12 are electrically insulated from each other. The separation groove g2 shown in FIG. 2B is for electrically separating the pair of left and right fixing portions 11. The movable portion 12 is elastically supported above the recess 101 by the elastic support portion 13. A metal layer 102 is formed on the back surface of the base portion 10. Further, the comb tooth electrode 110 of the fixing portion 11 is also arranged above the recess 101 so as to mesh with the comb tooth electrode 120 of the movable portion 12.
（振動発電素子１の製造方法）
　図３～１６は、振動発電素子１の製造手順の一例を示す図である。図３に示す第１の工程では、Ｓｉ基板２００の表裏両面にＬＰ－ＣＶＤによりＳｉＮ膜２０１を成膜する。図４は第２の工程を説明する図であり、図４（ａ）は平面図、図４（ｂ）はＡ－Ａ断面図である。第２の工程では、表面側のＳｉＮ膜２０１をドライエッチングによりエッチングして、電極パッド１１１，１１３を形成するためのパターンＰ１，Ｐ２と、分離溝ｇ１、ｇ２を形成するためのパターンＰ３，Ｐ４とを形成する。 (Manufacturing method of vibration power generation element 1)
3 to 16 are diagrams showing an example of a manufacturing procedure of the vibration power generation element 1. In the first step shown in FIG. 3, a SiN film 201 is formed on both the front and back surfaces of the Si substrate 200 by LP-CVD. 4A and 4B are views for explaining the second step, FIG. 4A is a plan view, and FIG. 4B is a sectional view taken along the line AA. In the second step, the SiN film 201 on the surface side is etched by dry etching to form the patterns P1 and P2 for forming the electrode pads 111 and 113, and the patterns P3 and P4 for forming the separation grooves g1 and g2. And form.
　図５，６は第３の工程を説明する図であり、図５は平面図を示し、図６（ａ）はＡ－Ａ断面図、図６（ｂ）はＣ－Ｃ断面図、図６（ｃ）はＢ－Ｂ断面図を示す。第３の工程では、Ｓｉ基板２００の表面側に固定部１１，可動部１２および弾性支持部１３を形成するためのＡｌ（アルミ）マスクパターン(不図示)を形成し、そのＡｌマスクパターンを用いたＤｅｅｐ－ＲＩＥによりＳｉ基板２００およびＳｉＮ膜２０１を貫通するようにエッチングする。このエッチングにより、固定部１１，可動部１２および弾性支持部１３における図５の図示領域Ｄに含まれる構造を形成する。具体的には、櫛歯電極１１０、２１０が形成されている部分の固定部１１および可動部１２、弾性支持部１３を形成する。図５の領域Ｄは、図２の凹部１０１の上方領域を示している。 5 and 6 are views for explaining the third step, FIG. 5 shows a plan view, FIG. 6A is a sectional view taken along the line AA, FIG. 6B is a sectional view taken along the line CC, and FIG. (C) shows a sectional view taken along line BB. In the third step, an Al (aluminum) mask pattern (not shown) for forming the fixing portion 11, the movable portion 12, and the elastic support portion 13 is formed on the surface side of the Si substrate 200, and the Al mask pattern is used. Etching is performed so as to penetrate the Si substrate 200 and the SiN film 201 by the Deep-RIE. By this etching, the structure included in the illustrated region D of FIG. 5 is formed in the fixed portion 11, the movable portion 12, and the elastic support portion 13. Specifically, the fixed portion 11, the movable portion 12, and the elastic support portion 13 of the portion where the comb tooth electrodes 110 and 210 are formed are formed. Region D in FIG. 5 shows an upper region of the recess 101 in FIG.
　図７は第４の工程を説明する図であり、図７（ａ）はＡ－Ａ断面図を、図７（ｂ）はＣ－Ｃ断面図を、図７（ｃ）はＢ－Ｂ断面図を示す。第４の工程では、分離溝ｇ１，ｇ２を形成するためのエッチングをＤｅｅｐ－ＲＩＥにより行う。分離溝ｇ１，ｇ２は、パターンＰ３，Ｐ４（図４参照）の位置に形成される。ただし、第４の工程では分離溝ｇ１，ｇ２で完全に分離させず、基板裏面側からＳｉ基板２００全体が一体に保たれる程度の深さまでエッチング（いわゆる、ハーフエッチング）する。 7A and 7B are views for explaining the fourth step, FIG. 7A is a sectional view taken along the line AA, FIG. 7B is a sectional view taken along the line CC, and FIG. 7C is a sectional view taken along the line BB. The figure is shown. In the fourth step, etching for forming the separation grooves g1 and g2 is performed by Deep-RIE. The separation grooves g1 and g2 are formed at the positions of the patterns P3 and P4 (see FIG. 4). However, in the fourth step, the separation grooves g1 and g2 are not completely separated, and etching is performed from the back surface side of the substrate to a depth such that the entire Si substrate 200 is integrally maintained (so-called half etching).
　図８は第５の工程を説明する図であり、図８（ａ）は平面図を、図８（ｂ）はＡ－Ａ断面図を示す。第５の工程では、Ｓｉ基板２００の露出面にカリウム等のアルカリ金属のイオンを含むＳｉＯ２膜２０２を形成する。 8A and 8B are views for explaining the fifth step, FIG. 8A shows a plan view, and FIG. 8B shows a sectional view taken along the line AA. In the fifth step, a SiO 2 film 202 containing ions of an alkali metal such as potassium is formed on the exposed surface of the Si substrate 200.
　図９は第６の工程を説明する図であり、図９（ａ）は平面図を、図９（ｂ）はＡ－Ａ断面図を示す。第６の工程では、まず、ＣＦ４ガスを用いたＲＩＥにより、基板裏面側のＳｉＮ膜２０１を除去する。同様に、基板表面側のＳｉＮ膜２０１を除去する。 9A and 9B are views for explaining the sixth step, FIG. 9A shows a plan view, and FIG. 9B shows a sectional view taken along the line AA. In the sixth step, the RIE using CF 4 gas to remove the SiN film 201 of the substrate rear surface side. Similarly, the SiN film 201 on the surface side of the substrate is removed.
　図１０は第７の工程を説明する図であり、図１０（ａ）は平面図を、図１０（ｂ）は断面図を示す。第７の工程では、ベース部１０を形成するためのガラス基板３００に凹部１０１を形成する。凹部１０１の底面と枠部１０３の端面との段差寸法Ｈは、振動する可動部１２が干渉しない寸法（例えば、数十μｍ）に設定される。ガラス基板３００には、陽極接合に用いられるガラス基板（例えば、ナトリウム含有のガラス基板）が用いられる。 10A and 10B are views for explaining the seventh step, FIG. 10A shows a plan view, and FIG. 10B shows a cross-sectional view. In the seventh step, the recess 101 is formed in the glass substrate 300 for forming the base portion 10. The step dimension H between the bottom surface of the recess 101 and the end surface of the frame portion 103 is set to a dimension (for example, several tens of μm) in which the vibrating movable portion 12 does not interfere. As the glass substrate 300, a glass substrate used for anode bonding (for example, a glass substrate containing sodium) is used.
　図１１は第８の工程を説明する図であり、図１１（ａ）は平面図を、図１１（ｂ）は断面図を示す。第８の工程では、ベース部１０の裏面側にアルミ蒸着膜等のメタル層１０２を形成する。なお、裏面側のメタル層１０２は、陽極接合プロセス時の電界をガラス基板３００全面に分散させるために形成したものである。しかし、メタル層１０２が無くても陽極接合は可能なため、メタル層１０２は必須ではない。 11A and 11B are views for explaining the eighth step, FIG. 11A shows a plan view, and FIG. 11B shows a cross-sectional view. In the eighth step, a metal layer 102 such as an aluminum vapor deposition film is formed on the back surface side of the base portion 10. The metal layer 102 on the back surface side is formed to disperse the electric field during the anode bonding process over the entire surface of the glass substrate 300. However, the metal layer 102 is not indispensable because the anode bonding is possible without the metal layer 102.
　図１２に示す第９の工程では、固定部１１、可動部１２および弾性支持部１３が形成されたＳｉ基板２００（図９参照）の裏面側に、図１１に示したガラス基板から成るベース部１０を陽極接合する。ヒータ４０上にベース部１０を載置し、そのベース部１０の上に固定部１１、可動部１２および弾性支持部１３が形成されたＳｉ基板２００を積層する。ヒータ４０の温度は、ガラス基板中におけるナトリウムイオンの熱拡散が十分活発になる温度（例えば、５００℃以上）に設定される。ヒータ４０を基準とするＳｉ基板２００の電圧Ｖ１は、例えば、４００Ｖ以上に設定される。 In the ninth step shown in FIG. 12, a base portion made of the glass substrate shown in FIG. 11 is formed on the back surface side of the Si substrate 200 (see FIG. 9) on which the fixing portion 11, the movable portion 12, and the elastic support portion 13 are formed. 10 is anodized. The base portion 10 is placed on the heater 40, and the Si substrate 200 on which the fixed portion 11, the movable portion 12, and the elastic support portion 13 are formed is laminated on the base portion 10. The temperature of the heater 40 is set to a temperature at which the thermal diffusion of sodium ions in the glass substrate becomes sufficiently active (for example, 500 ° C. or higher). The voltage V1 of the Si substrate 200 with reference to the heater 40 is set to, for example, 400 V or more.
　シリコン基板（Ｓｉ基板２００）とガラス基板（ベース部１０）とを陽極接合する場合には、シリコン基板とガラス基板との積層体を加熱しつつ、シリコン基板側を陽極として積層体に数百Ｖ程度の直流電圧を印加する。ガラス基板内のナトリウムイオンがマイナス電位側へ移動し、ガラス基板とシリコン基板との接合面のガラス基板側にＳｉＯ－の空間電荷層（ナトリウムイオンが欠乏した層）が形成される。その結果、静電引力によりガラス基板とシリコン基板とが接合される。 When the silicon substrate (Si substrate 200) and the glass substrate (base portion 10) are joined with an anode, the laminate of the silicon substrate and the glass substrate is heated, and the silicon substrate side is used as an anode to form a laminate with several hundred voltages. Apply a DC voltage of about. Sodium ions in the glass substrate move to the negative potential side, and a SiO − space charge layer (sodium ion-deficient layer) is formed on the glass substrate side of the joint surface between the glass substrate and the silicon substrate. As a result, the glass substrate and the silicon substrate are joined by electrostatic attraction.
　図１３は第１０の工程を説明する図であり、図１３（ａ）はＡ－Ａ断面図を、図１３（ｂ）はＣ－Ｃ断面図を、図１３（ｃ）はＢ-Ｂ断面図を示す。第１０の工程では、ベース部１０に陽極接合されたＳｉ基板２００をＤｅｅｐ－ＲＩＥにより途中までエッチングすることにより、図７に示す非貫通の分離溝ｇ１、ｇ２をＳｉ基板２００の表裏に貫通した状態とする。これにより、固定部１１と可動部１２を弾性支持する弾性支持部１３とが完全に分離される。なお、このエッチングにより、分離溝ｇ１、ｇ２が貫通状態となるだけではなく、穴形状の電極パッド１１１、１３１も形成される。 13A and 13B are views for explaining the tenth step, FIG. 13A is a sectional view taken along the line AA, FIG. 13B is a sectional view taken along the line CC, and FIG. 13C is a sectional view taken along the line BB. The figure is shown. In the tenth step, the Si substrate 200 anode-bonded to the base portion 10 was etched halfway by Deep-RIE to penetrate the non-penetrating separation grooves g1 and g2 shown in FIG. 7 through the front and back surfaces of the Si substrate 200. Make it a state. As a result, the fixed portion 11 and the elastic support portion 13 that elastically supports the movable portion 12 are completely separated. By this etching, not only the separation grooves g1 and g2 are in a penetrating state, but also the hole-shaped electrode pads 111 and 131 are formed.
　その後、周知のエレクトレット形成方法、例えば、日本国特開２０１３－１３２５６号公報に記載のBias-Temperature法により、櫛歯電極１１０，１２０の少なくとも一方にエレクトレットを形成することで、図１の振動発電素子１が完成する。 Then, by forming an electret on at least one of the comb tooth electrodes 110 and 120 by a well-known electret forming method, for example, the Bias-Temperature method described in Japanese Patent Application Laid-Open No. 2013-13256, the vibration power generation of FIG. 1 is performed. Element 1 is completed.
　本実施の形態の振動発電素子１では、固定部１１、可動部１２および弾性支持部１３をシリコン基板により形成し、固定部１１および弾性支持部１３をガラス基板により形成されたベース部１０に固定する構成とした。そのため、特許文献１に記載の静電型デバイスのように高価なＳＯＩ基板を用いていないので、コスト低減を図ることができる。 In the vibration power generation element 1 of the present embodiment, the fixed portion 11, the movable portion 12, and the elastic support portion 13 are formed of a silicon substrate, and the fixed portion 11 and the elastic support portion 13 are fixed to the base portion 10 formed of the glass substrate. It was configured to be. Therefore, unlike the electrostatic device described in Patent Document 1, an expensive SOI substrate is not used, so that the cost can be reduced.
（比較例）
　図１４は比較例を示すである。比較例の振動発電素子５０は、ＳＯＩ基板を用いて形成される。振動発電素子５０の固定部５１、可動部５２および不図示の弾性支持部１３はＳＯＩ基板の上部シリコン層である活性層６１に形成され、ベース部５３は下部シリコン層である支持層６３に形成される。可動部５２の櫛歯電極にはエレクトレット５２０が形成されている。活性層６１と支持層６３とはＳｉＯ２から成るＢＯＸ層６２を介して設けられているので、活性層６１と支持層６３との間に生じる寄生容量Ｃs1，Ｃs2が、振動発電素子５０の発電電力に悪影響を与えることになる。 (Comparison example)
FIG. 14 shows a comparative example. The vibration power generation element 50 of the comparative example is formed by using an SOI substrate. The fixed portion 51, the movable portion 52, and the elastic support portion 13 (not shown) of the vibration power generation element 50 are formed on the active layer 61 which is the upper silicon layer of the SOI substrate, and the base portion 53 is formed on the support layer 63 which is the lower silicon layer. Will be done. An electret 520 is formed on the comb tooth electrode of the movable portion 52. Since the active layer 61 and the support layer 63 are provided via the BOX layer 62 made of SiO 2 , the parasitic capacitances Cs1 and Cs2 generated between the active layer 61 and the support layer 63 generate power for the vibration power generation element 50. It will adversely affect the power generation.
　固定部５１に対して可動部５２が図示左右方向に振動すると、固定部５１および可動部５２の櫛歯電極間の静電容量Ｃ１，Ｃ２が変化し、静電容量Ｃ１，Ｃ２の変化による交流電流が端子電流Ｉ１として出力される。出力された端子電流Ｉ１は、一部の電流Ｉ３が寄生容量Ｃs1，Ｃs2を流れ、残りの電流Ｉ２が振動発電素子５０に接続された負荷抵抗Ｒを流れる。 When the movable portion 52 vibrates with respect to the fixed portion 51 in the left-right direction shown in the drawing, the capacitances C1 and C2 between the fixed portion 51 and the comb tooth electrodes of the movable portion 52 change, and alternating current due to the change in the capacitances C1 and C2. The current is output as the terminal current I1. In the output terminal current I1, a part of the current I3 flows through the parasitic capacitances Cs1 and Cs2, and the remaining current I2 flows through the load resistor R connected to the vibration power generation element 50.
　図１５は振動発電素子５０による発電のシミュレーション結果を示したものであり、図１５（ａ）は電流Ｉ２，Ｉ３を示し、図１５（ｂ）は負荷抵抗Ｒで消費される電力Ｗ２および寄生容量Ｃs1に出入りする電力Ｗ３を示す。寄生容量Ｃs1の電流は端子電圧に対して位相が９０度進んでいる。寄生容量Ｃs1に出入りする電力Ｗ３は外部に取り出されない無効電力である。寄生容量Ｃs2に出入りする電力についても同様である。寄生容量Ｃs1，Ｃs2の増加により無効電力Ｗ３は増加し、負荷抵抗Ｒで消費される電力である有効電力Ｗ２は減少する。 FIG. 15 shows the simulation result of power generation by the vibration power generation element 50, FIG. 15A shows the currents I2 and I3, and FIG. 15B shows the power W2 and the parasitic capacitance consumed by the load resistor R. The electric power W3 that goes in and out of Cs1 is shown. The phase of the current of the parasitic capacitance Cs1 is 90 degrees ahead of the terminal voltage. The power W3 that goes in and out of the parasitic capacitance Cs1 is reactive power that is not taken out to the outside. The same applies to the electric power that goes in and out of the parasitic capacitance Cs2. As the parasitic capacitances Cs1 and Cs2 increase, the reactive power W3 increases, and the active power W2, which is the power consumed by the load resistor R, decreases.
　一方、本実施の形態の振動発電素子１では、シリコンで形成された固定部１１および可動部１２はガラス基板で形成したベース部１０に接合されているので、寄生容量の発生を防止することができる。その結果、寄生容量に起因する無効電力の発生を防止することができ、発電された電力を無駄なく負荷抵抗Ｒにより消費することができる。 On the other hand, in the vibration power generation element 1 of the present embodiment, since the fixed portion 11 and the movable portion 12 formed of silicon are joined to the base portion 10 formed of the glass substrate, it is possible to prevent the occurrence of parasitic capacitance. it can. As a result, it is possible to prevent the generation of reactive power due to the parasitic capacitance, and the generated power can be consumed by the load resistor R without waste.
　なお、ＳＯＩ基板から振動発電素子５０を形成した場合であっても、ＢＯＸ層の厚さを従来よりも厚くして寄生容量を小さくすることにより、ガラス基板のベース部１０を採用する場合と同様に無効電力の低減を図ることができる。 Even when the vibration power generation element 50 is formed from the SOI substrate, it is the same as the case where the base portion 10 of the glass substrate is adopted by making the thickness of the BOX layer thicker than before and reducing the parasitic capacitance. It is possible to reduce reactive power.
　上述した実施の形態の作用効果をまとめると以下のようになる。
（１）静電型デバイスである振動発電素子１は、図１に示すように、固定部１１と、可動部１２と、可動部１２と一体に形成され、可動部１２を弾性支持する弾性支持部１３と、固定部１１および弾性支持部１３が互いに分離状態で陽極接合されているガラス製のベース部１０と、を備える。そのため、ＳＯＩ基板を用いて製作される振動発電素子５０に比べてコスト低減を図ることができる。 The effects of the above-described embodiments can be summarized as follows.
(1) As shown in FIG. 1, the vibration power generation element 1 which is an electrostatic device is formed integrally with the fixed portion 11, the movable portion 12, and the movable portion 12, and is elastically supported to elastically support the movable portion 12. A portion 13 and a glass base portion 10 in which the fixing portion 11 and the elastic support portion 13 are anodic-bonded in a separated state are provided. Therefore, the cost can be reduced as compared with the vibration power generation element 50 manufactured by using the SOI substrate.
　なお、上述した実施の形態では、静電型デバイスである振動発電素子１を例に説明したが、振動発電素子１に限らず、特許文献１に記載のようなアクチュエータやセンサ等にも適用することができる。すなわち、アクチュエータやセンサをシリコン基板から製作し、それらをガラス製のベース部で支持するような構成とする。そうすることで、コスト低減に加えて寄生容量の抑制も図ることができる。なお、電気伝導性を有しガラス基板との線膨張係数が十分に一致すれば、シリコン基板に限らずその他のガラス基板やシリコン薄膜を成膜したガラス基板などを用いてアクチュエータやセンサ等を形成しても良い。 In the above-described embodiment, the vibration power generation element 1 which is an electrostatic device has been described as an example, but it is applied not only to the vibration power generation element 1 but also to an actuator, a sensor, or the like as described in Patent Document 1. be able to. That is, the actuator and the sensor are manufactured from a silicon substrate, and they are supported by a glass base portion. By doing so, in addition to cost reduction, it is possible to suppress parasitic capacitance. If it has electrical conductivity and the coefficient of linear expansion is sufficiently consistent with that of the glass substrate, an actuator, a sensor, or the like can be formed not only by using a silicon substrate but also by using another glass substrate or a glass substrate on which a silicon thin film is formed. You may.
（２）さらに、固定部１１および可動部１２をシリコンで形成し、固定部１１および可動部１２の少なくとも一方にエレクトレットを形成するようにしても良い。 (2) Further, the fixed portion 11 and the movable portion 12 may be formed of silicon, and an electret may be formed on at least one of the fixed portion 11 and the movable portion 12.
（３）図１に示す静電型デバイスである振動発電素子１は、固定部１１には固定電極である櫛歯電極１１０が形成され、可動部１２は櫛歯電極１１０と対向する可動電極である櫛歯電極１２０が形成され、さらに固定部１１および可動部１２の少なくとも一方にエレクトレットが形成され、固定部１１に対する可動部１２の変位により櫛歯電極１１０と櫛歯電極１２０との静電容量が変化して発電を行う。ベース部１０がガラス製であるため、上述したコスト低減に加えて、図１４に示すＳＯＩ基板を用いた振動発電素子５０における寄生容量Ｃs1，Ｃs2の発生を防止でき、寄生容量に起因する無効電力Ｗ３の発生を防止することができる。 (3) In the vibration power generation element 1 which is an electrostatic device shown in FIG. 1, a comb tooth electrode 110 which is a fixed electrode is formed in a fixed portion 11, and a movable portion 12 is a movable electrode facing the comb tooth electrode 110. A certain comb tooth electrode 120 is formed, and an electlet is further formed on at least one of the fixed portion 11 and the movable portion 12, and the electrostatic capacitance between the comb tooth electrode 110 and the comb tooth electrode 120 due to the displacement of the movable portion 12 with respect to the fixed portion 11. Changes to generate power. Since the base portion 10 is made of glass, in addition to the cost reduction described above, it is possible to prevent the generation of parasitic capacitances Cs1 and Cs2 in the vibration power generation element 50 using the SOI substrate shown in FIG. 14, and the reactive power due to the parasitic capacitance can be prevented. It is possible to prevent the occurrence of W3.
（４）上述した静電型デバイスの製造方法では、固定部１１、可動部１２および弾性支持部１３を基板、例えばＳｉ基板２００、に一体状態で形成し、ガラス製のベース部１０とＳｉ基板２００とを陽極接合して固定部１１および弾性支持部１３をガラス製のベース部１０に固定し、Ｓｉ基板２００をエッチングして固定部１１と弾性支持部１３とを互いに分離して、固定部１１と可動部１２とを電気的に分離する。 (4) In the method for manufacturing an electrostatic device described above, the fixed portion 11, the movable portion 12, and the elastic support portion 13 are integrally formed with a substrate, for example, a Si substrate 200, and a glass base portion 10 and a Si substrate are formed. The fixed portion 11 and the elastic support portion 13 are fixed to the glass base portion 10 by anodizing the 200, and the Si substrate 200 is etched to separate the fixed portion 11 and the elastic support portion 13 from each other to separate the fixed portion 11 and the elastic support portion 13. The 11 and the movable portion 12 are electrically separated.
　このように固定部１１と弾性支持部１３とを分離する前に、固定部１１，可動部１２および弾性支持部１３が一体状態となったＳｉ基板２００をベース部１０に陽極接合し、陽極接合後に分離するようにしているので、ウエハレベルの固定部１１、可動部１２および弾性支持部１３の位置関係を維持した状態で、それらをベース部１０に接合することができる。 Before separating the fixed portion 11 and the elastic support portion 13 in this way, the Si substrate 200 in which the fixed portion 11, the movable portion 12, and the elastic support portion 13 are integrated is anodic-bonded to the base portion 10 and anodic-bonded. Since they are separated later, they can be joined to the base portion 10 while maintaining the positional relationship between the wafer-level fixed portion 11, the movable portion 12, and the elastic support portion 13.
　本発明は上述した実施の形態の内容に限定されるものではなく、本発明の技術的思想の範囲内で考えられるその他の態様も本発明の範囲内に含まれる。 The present invention is not limited to the contents of the above-described embodiments, and other aspects considered within the scope of the technical idea of the present invention are also included within the scope of the present invention.
　次の優先権基礎出願および公開公報の開示内容は引用文としてここに組み込まれる。
　日本国特願２０１９－１０６２３０号（２０１９年６月６日出願）
　日本国特開２０１３－１３２５６号公報 The disclosures of the following priority basic applications and publications are incorporated herein by reference.
Japanese Patent Application No. 2019-106230 (filed on June 6, 2019)
Japanese Patent Application Laid-Open No. 2013-13256
　１，５０…振動発電素子、１０，５３…ベース部、１１，５１…固定部、１２，５２…可動部、１３…弾性支持部、１３ａ…固定領域、１３ｂ…弾性部、４０…ヒータ、１１０，１２０…櫛歯電極、２００…Ｓｉ基板、３００…ガラス基板、Ｃs1，Ｃs2…寄生容量 1,50 ... Vibration power generation element, 10,53 ... Base part, 11,51 ... Fixed part, 12,52 ... Movable part, 13 ... Elastic support part, 13a ... Fixed area, 13b ... Elastic part, 40 ... Heater, 110 , 120 ... comb tooth electrode, 200 ... Si substrate, 300 ... glass substrate, Cs1, Cs2 ... parasitic capacitance

Claims (4)

  1. 　固定部と、
    　可動部と、
    　前記可動部と一体に形成され、前記可動部を弾性支持する弾性支持部と、
    　前記固定部および前記弾性支持部が互いに分離状態で陽極接合されているガラス製のベース部と、を備える静電型デバイス。     Fixed part and
    Moving parts and
    An elastic support portion that is formed integrally with the movable portion and elastically supports the movable portion,
    An electrostatic device comprising a glass base portion in which the fixing portion and the elastic support portion are anode-bonded in a separated state from each other.
  2. 　請求項１に記載の静電型デバイスにおいて、
    　前記固定部および前記可動部はシリコンで形成され、
    　前記固定部および前記可動部の少なくとも一方にエレクトレットが形成されている、静電型デバイス。     In the electrostatic device according to claim 1,
    The fixed portion and the movable portion are made of silicon.
    An electrostatic device in which an electret is formed on at least one of the fixed portion and the movable portion.
  3. 　請求項２に記載の静電型デバイスにおいて、
    　前記固定部には固定電極が形成され、
    　前記可動部には前記固定電極と対向する可動電極が形成され、
    　前記固定部に対する前記可動部の変位により前記固定電極と前記可動電極との静電容量が変化して発電を行う、静電型デバイス。     In the electrostatic device according to claim 2,
    A fixed electrode is formed on the fixed portion,
    A movable electrode facing the fixed electrode is formed on the movable portion.
    An electrostatic device that generates electricity by changing the capacitance between the fixed electrode and the movable electrode due to the displacement of the movable portion with respect to the fixed portion.
  4. 　請求項１から請求項３までのいずれか一項に記載の静電型デバイスを製造するための静電型デバイス製造方法であって、
    　前記固定部、前記可動部および前記弾性支持部を基板に一体状態で形成し、
    　前記ベース部と前記基板とを陽極接合して前記固定部および前記弾性支持部を前記ベース部に固定し、
    　前記基板をエッチングして前記固定部と前記弾性支持部とを互いに分離する、静電型デバイス製造方法。     A method for manufacturing an electrostatic device for manufacturing the electrostatic device according to any one of claims 1 to 3.
    The fixed portion, the movable portion, and the elastic support portion are integrally formed on the substrate.
    The base portion and the substrate are anode-bonded to fix the fixing portion and the elastic support portion to the base portion.
    A method for manufacturing an electrostatic device, in which the substrate is etched to separate the fixed portion and the elastic support portion from each other.
PCT/JP2020/012458 2019-06-06 2020-03-19 Electrostatic device and method for manufacturing electrostatic device WO2020246115A1 (en)

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Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09166618A (en) * 1995-12-15 1997-06-24 Matsushita Electric Works Ltd Semiconductor acceleration sensor
US6146917A (en) * 1997-03-03 2000-11-14 Ford Motor Company Fabrication method for encapsulated micromachined structures
JP2008105162A (en) * 2006-10-27 2008-05-08 Hitachi Ltd Functional element
JP2008229823A (en) * 2007-03-23 2008-10-02 Mitsutoyo Corp Manufacturing method of mems device
JP2009045712A (en) * 2007-08-21 2009-03-05 Toshiba Corp Mems device and method of manufacturing the same
JP2009515338A (en) * 2005-11-03 2009-04-09 マキシム・インテグレーテッド・プロダクツ・インコーポレーテッド Wafer level packaging method
JP2010011547A (en) * 2008-06-24 2010-01-14 Panasonic Electric Works Co Ltd Power generation device
JP2010512548A (en) * 2006-12-12 2010-04-22 フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー．ファオ Micromirror actuator having encapsulation capability and method of manufacturing the same
JP2013013256A (en) 2011-06-29 2013-01-17 Aoi Electronics Co Ltd Electret film and vibration power generating element using the same
JP2013030759A (en) * 2011-06-20 2013-02-07 Tohoku Univ Packaged device, packaging method and production method of package material
JP2013250133A (en) * 2012-05-31 2013-12-12 Seiko Epson Corp Electronic device, method of manufacturing electronic device, and electronic apparatus
JP2014187354A (en) * 2013-02-21 2014-10-02 Ricoh Co Ltd Device and method of manufacturing device
JP2016059191A (en) 2014-09-11 2016-04-21 ソニー株式会社 Electrostatic device
JP2018523846A (en) * 2015-07-15 2018-08-23 テクノロジー イノベーション モメンタム ファンド（イスラエル）リミテッド パートナーシップＴｅｃｈｎｏｌｏｇｙ Ｉｎｎｏｖａｔｉｏｎ Ｍｏｍｅｎｔｕｍ Ｆｕｎｄ（ｉｓｒａｅｌ）Ｌｉｍｉｔｅｄ Ｐａｒｔｎｅｒｓｈｉｐ Adjustable MEMS etalon
JP2019106230A (en) 2011-12-05 2019-06-27 株式会社半導体エネルギー研究所 Semiconductor device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7258010B2 (en) * 2005-03-09 2007-08-21 Honeywell International Inc. MEMS device with thinned comb fingers
JP2008046078A (en) * 2006-08-21 2008-02-28 Hitachi Ltd Micro electromechanical system element and manufacturing method thereof
JP5320625B2 (en) * 2008-10-20 2013-10-23 Ｔｏｗａ株式会社 Actuator and manufacturing method thereof
JP2013118784A (en) * 2011-12-05 2013-06-13 Murata Mfg Co Ltd Power generator and manufacturing method of the same
WO2015019919A1 (en) * 2013-08-08 2015-02-12 アオイ電子株式会社 Actuator, shutter device, fluid control device, switch, and two-dimensional scanning sensor device
JP2016209935A (en) * 2015-04-30 2016-12-15 アオイ電子株式会社 Method for forming electret and mems device
JP6682106B2 (en) * 2015-10-02 2020-04-15 株式会社鷺宮製作所 Vibration generator

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09166618A (en) * 1995-12-15 1997-06-24 Matsushita Electric Works Ltd Semiconductor acceleration sensor
US6146917A (en) * 1997-03-03 2000-11-14 Ford Motor Company Fabrication method for encapsulated micromachined structures
JP2009515338A (en) * 2005-11-03 2009-04-09 マキシム・インテグレーテッド・プロダクツ・インコーポレーテッド Wafer level packaging method
JP2008105162A (en) * 2006-10-27 2008-05-08 Hitachi Ltd Functional element
JP2010512548A (en) * 2006-12-12 2010-04-22 フラウンホッファー−ゲゼルシャフト ツァ フェルダールング デァ アンゲヴァンテン フォアシュンク エー．ファオ Micromirror actuator having encapsulation capability and method of manufacturing the same
JP2008229823A (en) * 2007-03-23 2008-10-02 Mitsutoyo Corp Manufacturing method of mems device
JP2009045712A (en) * 2007-08-21 2009-03-05 Toshiba Corp Mems device and method of manufacturing the same
JP2010011547A (en) * 2008-06-24 2010-01-14 Panasonic Electric Works Co Ltd Power generation device
JP2013030759A (en) * 2011-06-20 2013-02-07 Tohoku Univ Packaged device, packaging method and production method of package material
JP2013013256A (en) 2011-06-29 2013-01-17 Aoi Electronics Co Ltd Electret film and vibration power generating element using the same
JP2019106230A (en) 2011-12-05 2019-06-27 株式会社半導体エネルギー研究所 Semiconductor device
JP2013250133A (en) * 2012-05-31 2013-12-12 Seiko Epson Corp Electronic device, method of manufacturing electronic device, and electronic apparatus
JP2014187354A (en) * 2013-02-21 2014-10-02 Ricoh Co Ltd Device and method of manufacturing device
JP2016059191A (en) 2014-09-11 2016-04-21 ソニー株式会社 Electrostatic device
JP2018523846A (en) * 2015-07-15 2018-08-23 テクノロジー イノベーション モメンタム ファンド（イスラエル）リミテッド パートナーシップＴｅｃｈｎｏｌｏｇｙ Ｉｎｎｏｖａｔｉｏｎ Ｍｏｍｅｎｔｕｍ Ｆｕｎｄ（ｉｓｒａｅｌ）Ｌｉｍｉｔｅｄ Ｐａｒｔｎｅｒｓｈｉｐ Adjustable MEMS etalon

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP3965284A4

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