WO2020244072A1 - 一种发光层结构及显示装置 - Google Patents

一种发光层结构及显示装置 Download PDF

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Publication number
WO2020244072A1
WO2020244072A1 PCT/CN2019/103186 CN2019103186W WO2020244072A1 WO 2020244072 A1 WO2020244072 A1 WO 2020244072A1 CN 2019103186 W CN2019103186 W CN 2019103186W WO 2020244072 A1 WO2020244072 A1 WO 2020244072A1
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Prior art keywords
layer
opening area
charge injection
pixel opening
light
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English (en)
French (fr)
Inventor
李文杰
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/621,252 priority Critical patent/US11139447B2/en
Publication of WO2020244072A1 publication Critical patent/WO2020244072A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H10K59/173—Passive-matrix OLED displays comprising banks or shadow masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Definitions

  • the present invention relates to the field of display, in particular to a light-emitting layer structure and a display device.
  • Organic light emitting device OLED Organic Light Emitting Diode
  • OLED Organic Light Emitting Diode
  • the traditional OLED adopts vacuum evaporation technology and can be mass-produced at present.
  • this technology requires the use of fine masks, which results in low material utilization; in addition, for large-size panels, the preparation process of masks has been challenged.
  • printing and display technology Ink jet printing, IJP
  • Printed display technology is the best way to achieve large-scale and low-cost production of organic light-emitting devices.
  • the use of printing and display technology to prepare organic light-emitting devices requires modification of the pixel definition layer (Bank) and the substrate electrode, so that the ink can accurately fall into the pixel without overflow. Therefore, one of the key technologies of inkjet printing is to make the surface of the pixel definition layer have a certain degree of hydrophobicity, which can confine the ink in the pixel definition layer.
  • the pixel definition layer can use organic photoresist, and the photoresist component has water-transmitting functional groups, etc.;
  • the surface of the pixel definition layer of the substrate used in IJP OLED is hydrophobic.
  • the patterned pixel definition layer is prepared by organic photoresist containing hydrophobic components.
  • the main processes are exposure and development. There will be shadow effects during the exposure. There may be a certain amount of photoresist residue on the surface of the transparent conductive film; the photoresist that has not reacted during the development process will be dissolved in the developer and washed away. If it is not sufficiently cleaned, a small amount of foreign matter is attached to the surface of the transparent conductive film; transparent conductive The foreign matter remaining on the film surface will cause poor ink spreading, so the device will have leakage current, etc., in short, the device characteristics will be deteriorated.
  • the present invention provides a light-emitting layer structure and a display device to solve the problem of residual photoresistance on the surface of the transparent conductive film during the exposure and development of the pixel definition layer in the prior art, thereby causing subsequent ink It cannot be laid flat on the surface of the transparent conductive film, causing leakage current problems in the device.
  • a light-emitting layer structure including a substrate; a pixel defining layer provided on the substrate, the pixel defining layer having a pixel opening area; and a reflective electrode including a first charge injection layer, provided On the substrate and located in the pixel opening area, the first charge injection layer is a transparent structure; a metal reflective layer is provided on the first charge injection layer; a second charge injection layer is provided on the metal The reflective layer is partially exposed in the pixel opening area, and the second charge injection layer has a transparent structure.
  • the pixel opening area is oblong, and in its length direction, both sides of the pixel opening area are arc-shaped sides;
  • the metal reflective layer is oblong, and in its length direction, the metal reflecting The two sides of the layer are arc-shaped edges; wherein, both sides of the metal reflective layer extend from the arc-shaped edges of the pixel opening area to outside the pixel opening area; In the length direction, that is, in the width direction, both sides of the metal reflective layer are in the pixel opening area and there is a distance from the pixel opening area.
  • the projection of the second charge injection layer on the substrate completely coincides with the projection of the first charge injection layer on the substrate.
  • the width direction distance of the metal reflective layer accounts for 50% to 99% of the width direction distance of the pixel opening area.
  • the thickness of the first charge injection layer and the second charge injection layer are both 10 nm to 1000 nm.
  • the thickness of the metal reflective layer is 50 nm to 1000 nm; the material used for the first charge injection layer and the second charge injection layer is transparent indium tin oxide.
  • the projection of the pixel opening area on the substrate completely falls within the projection range of the first charge injection layer on the substrate.
  • the material of the pixel defining layer is an organic photoresist with hydrophobicity.
  • the material of the metal reflective layer is an alloy such as Al, Ag, Mg, or a metal oxide thereof.
  • the light-emitting layer structure and the display device of the present invention provide a metal reflective layer under the second charge injection layer in the pixel opening area, wherein the long side direction of the metal reflective layer is longer than the long side direction of the pixel opening area, so that the subsequent ultraviolet irradiation
  • the second irradiation can be performed at the end of the long side of the pixel opening area, that is, the short side of the arc, to decompose the organic residue on the second charge injection layer at the short side of the arc, and improve the stretchability of the ink, perpendicular to the metal reflective layer
  • the long-side direction that is, the width of the metal reflective layer is smaller than the width of the pixel opening area.
  • FIG. 1 is a side cross-sectional view of the long side direction of the pixel opening area of the light-emitting layer structure in the embodiment.
  • FIG. 2 is a side cross-sectional view of the pixel opening area of the light-emitting layer structure in the short side direction of the embodiment.
  • Fig. 3 is a partial top view of the light-emitting layer mechanism in the embodiment.
  • Fig. 4 is a schematic diagram of the display device in the embodiment.
  • the part When some part is described as being “on” another part, the part may be directly placed on the other part; there may also be an intermediate part on which the part is placed, And the middle part is placed on another part.
  • a component When a component is described as “installed to” or “connected to” another component, both can be understood as directly “installed” or “connected”, or a component is indirectly “mounted to” or “connected to” through an intermediate component To" another part.
  • the light-emitting layer structure 10 of the present invention includes a substrate 110, a pixel definition layer 120, and a reflective electrode 130; wherein, the reflective electrode 130 includes a first charge injection layer 131, a metal The reflective layer 132 and the second charge injection layer 133.
  • the substrate 110 is a hard glass substrate for carrying the pixel definition layer 120.
  • the pixel defining layer 120 is provided on the substrate 110, and the surface of the pixel defining layer 120 is hydrophobic.
  • An organic photoresist containing hydrophobic components such as F or Cl is used, preferably after patterning with a negative photoresist.
  • the pixel definition layer 120 is formed.
  • the pixel defining layer 120 has a plurality of pixel opening regions 121, and the pixel opening regions 121 are oblong. Specifically, the pixel opening regions 121 include two parallel first long sides 1211 and connecting the first long sides 1211. The first short side 1212 of the long side 1211, wherein the first short side 1212 is an arc-shaped short side.
  • the reflective electrode 130 is disposed between the substrate 110 and the pixel defining layer 120. Specifically, the reflective electrode 130 corresponds to the pixel opening area 121, and the reflective electrode 130 can be thermally evaporated or sputtered. Way to form.
  • the reflective electrode 130 includes a second charge injection layer 133 disposed on the substrate 110 and located in the pixel opening area 121.
  • the second charge injection layer 133 has a transparent structure and is made of indium tin oxide or indium zinc. Oxide, the thickness of the second charge injection layer 133 is 10 nm to 1000 nm.
  • the pixel opening area 121 has an oblong structure, and the short side 1212 thereof is an arc-shaped short side, in the subsequent inkjet printing technology, the surface of the second charge injection layer 133 at the arc-shaped short side It is easy to leave trace foreign matter, thus affecting the spreading effect of ink.
  • the pixel opening area 121 is usually irradiated with ultraviolet rays to remove the photoresist residue on the second charge injection layer 133.
  • the ultraviolet irradiation reduces the hydrophobicity of the pixel defining layer 120, and Hydrophobicity has a greater impact on the arc-shaped short sides of the pixel opening area 121.
  • the metal reflective layer 132 is disposed under the second charge injection layer 133, because the metal The reflective layer 132 has the effect of reflecting light, and can perform secondary reflection when the ultraviolet rays are irradiated to fully decompose the organic impurities on the second charge injection layer 133.
  • the metal reflective layer 132 has a thickness of 50 nm to 1000 nm, and its material is alloys such as Al, Ag, Mg, or their metal oxides or other metals that can reflect ultraviolet rays, and can be formed by a fine mask or etching.
  • the shape of the metal reflective layer 132 is similar to the pixel opening area 121, and both have an oblong structure, including two parallel second long sides 1311 and connecting the second long sides 1311.
  • the second short side 1312 is an arc-shaped short side; wherein, the difference between the metal reflective layer 132 and the pixel opening area 121 is that the second short side 1312 of the metal reflective layer 132 Both short sides 1312 extend beyond the first short side 1212 of the pixel opening area 121, so that when ultraviolet light is irradiated, the light will be reflected back after passing through the metal reflective layer 132, and the first short side
  • the second charge injection layer 133 of 1212 is irradiated twice to fully decompose the organic impurities on its surface; another difference is that in the length direction that is perpendicular to the width direction of the pixel opening area 121, the metal
  • the two second long sides 1311 of the reflective layer are both in the pixel opening area 121 and there is a distance from the first long side 1211
  • the first charge injection layer 131 of the present invention is provided on the substrate 110 and located below the metal reflective layer 132, and has a thickness of 10 nm to 1000 nm, and the shape is consistent with the shape of the second charge injection layer 133. Both are larger than the pixel opening area 121, which can ensure that the ink is completely spread on the second charge injection layer 133 in the subsequent inkjet printing process.
  • the present invention also provides a display device 1 whose main improvements and features are concentrated on the light-emitting layer structure 10, and other components of the display device will not be repeated.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种发光层结构（10）及显示装置（1），发光层结构（10）包括第一电荷注入层（131），设于基板（110）上且位于所述像素开口区（121），金属反射层（132），设于第一电荷注入层（131）上；在上述发光层结构（10）及显示装置（1）中，金属反射层（132）的长边（1311）方向长于像素开口区（121）的长边（1211）方向，可以进行二次照射，分解弧形短边（1212）处有机物残留，提高墨水的舒展性。

Description

一种发光层结构及显示装置 技术领域
本发明涉及显示领域，特别涉及一种发光层结构及显示装置。
 背景技术
有机发光器件OLED(Organic Light Emitting Diode)以其良好的自发光特性、高对比度、快速响应以及柔性显示等优势，得到了广泛的应用。传统的OLED采用真空蒸镀技术，目前可实现量产化。但是该技术需要采用精细掩模版，导致材料利用率低；另外，对于大尺寸面板，掩模版的制备工艺饱受挑战。近些年，印刷显示技术(喷墨打印，Ink jet printing，IJP)发展迅速。印刷显示技术是有机发光器件实现大尺寸以及低成本生产的最佳途径。
采用印刷显示技术制备有机发光器件，需要对像素定义层(Bank)以及衬底电极进行修饰，使得墨水能够准确落入像素内，并且无溢流现象发生。因此，喷墨打印关键技术之一是使得像素定义层表面具有一定疏水性，可将墨水ink限制在像素定义层内。像素定义层可使用有机光阻，光阻成分中具有输水性官能团等等；
IJP OLED所采用的基板像素定义层表面为疏水性，采用有机含有疏水性成分的光阻制备图案化的像素定义层，主要采取的制程有曝光和显影，在曝光的过程中会存在阴影影响，可能在透明导电膜表面存在一定的光阻残留；在显影的过程中没有反应的光阻会溶解在显影液中被洗掉，如果没有被充分清洗，透明导电膜表面附着有微量异物；透明导电膜表面残留的异物会造成墨水铺展差，因此器件会出现漏电流等，总之器件特性会变差。
 技术问题
为了解决上述问题，本发明提供了一种发光层结构及显示装置，用以解决现有技术中由于像素定义层在曝光和显影过程中，透明导电膜表面存在光阻残留，从而使后续的墨水无法平铺于透明导电膜表面，造成器件出现漏电流的问题。
 技术解决方案
解决上述问题的技术方案是:一种发光层结构，包括基板；像素定义层，设于所述基板上，所述像素定义层具有像素开口区；以及反射电极，包括第一电荷注入层，设于所述基板上且位于所述像素开口区，所述第一电荷注入层为透明结构；金属反射层，设于所述第一电荷注入层上；第二电荷注入层，设于所述金属反射层上且部分裸露于所述像素开口区，所述第二电荷注入层为透明结构。
进一步的，所述像素开口区为长圆形，在其长度方向，所述像素开口区的两侧为弧形边； 所述金属反射层为长圆形，在其长度方向，所述金属反射层的两侧为弧形边；其中，所述金属反射层的两侧均从所述像素开口区的弧形边处延伸至所述像素开口区之外；在垂直于所述像素开口区的长度方向即宽度方向上，所述金属反射层的两侧均在所述像素开口区内且与所述像素开口区之间存在一距离。
进一步的，所述第二电荷注入层在所述基板上的投影与所述第一电荷注入层在所述基板上的投影完全重合。
进一步的，所述金属反射层宽度方向距离占所述像素开口区宽度方向距离的50%～99%。
进一步的，所述第一电荷注入层和所述第二电荷注入层的厚度均为10 nm～1000nm。
进一步的，所述金属反射层的厚度为50nm～1000nm；所述第一电荷注入层和所述第二电荷注入层所用材料为透明氧化铟锡。
进一步的，所述像素开口区在所述基板上的投影完全落入所述第一电荷注入层在所述基板上的投影范围内。
进一步的，所述像素定义层的材料为具有疏水性的有机光阻。
进一步的，所述金属反射层的材料为Al、Ag、Mg等合金或者其金属氧化物。
 有益效果
本发明的发光层结构及显示装置通过在像素开口区的第二电荷注入层下设置金属反射层，其中，金属反射层的长边方向长于像素开口区的长边方向，从而在后续的紫外线照射中，在像素开口区的长边末端即弧形短边处可以进行二次照射，分解弧形短边处的第二电荷注入层上的有机物残留，提高墨水的舒展性，垂直于金属反射层长边方向即金属反射层的宽度小于像素开口区的宽度，在紫外线照射中，像素开口区的长边处只会进行一次紫外线照射，从而不会大幅度降低像素定义层表面的疏水性，不会造成墨水溢流现象。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是实施例中发光层结构像素开口区长边方向侧面剖视图。
图2是实施例中发光层结构像素开口区短边方向侧面剖视图。
图3是实施例中发光层机构局部俯视图。
图4是实施例中显示装置示意图。
图中
1 显示装置；
10 发光层结构；                             110 基板；
120 像素定义层；                            130 反射电极；
131 第一电荷注入层；                        132 金属反射层；
133 第二电荷注入层；                        121 像素开口区；
1211 第一长边；                             1212 第一短边；
1311 第二长边；                             1312 第二短边；
 本发明的实施方式
以下参考说明书附图介绍本发明的优选实施例，证明本发明可以实施，所述发明实施例可以向本领域中的技术人员完整介绍本发明，使其技术内容更加清楚和便于理解。本发明可以通过许多不同形式的发明实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。
在附图中，结构相同的部件以相同数字标号表示，各处结构或功能相似的组件以相似数字标号表示。附图所示的每一部件的尺寸和厚度是任意示出的，本发明并没有限定每个组件的尺寸和厚度。为了使图示更清晰，附图中有些地方适当夸大了部件的厚度。
此外，以下各发明实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定发明实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。此外，术语“第一”、“第二”、“第三”等仅用于描述目的，而不能理解为指示或暗示相对重要性。
当某些部件被描述为“在”另一部件“上”时，所述部件可以直接置于所述另一部件上；也可以存在一中间部件，所述部件置于所述中间部件上，且所述中间部件置于另一部件上。当一个部件被描述为“安装至”或“连接至”另一部件时，二者可以理解为直接“安装”或“连接”，或者一个部件通过一中间部件间接“安装至”、或“连接至”另一个部件。
实施例
如图1和图2所示，本实施例中，本发明的发光层结构10包括基板110、像素定义层120、反射电极130；其中，所述反射电极130包括第一电荷注入层131、金属反射层132、第二电荷注入层133。
所述基板110为硬质玻璃基板，用于承载所述像素定义层120。
所述像素定义层120设于所述基板110上，所述像素定义层120表面为疏水性，采用有机含疏水性成分的有机光阻如F或者Cl元素，优选负性光阻进行图案化后形成所述像素定义层120。
所述像素定义层120具有若干像素开口区121，所述像素开口区121为长圆形，具体的，所述像素开口区121包括两条相互平行的第一长边1211和连接所述第一长边1211的第一短边1212，其中，所述第一短边1212为弧形短边。
所述反射电极130设于所述基板110和所述像素定义层120之间，具体的，所述反射电极130对应所述像素开口区121，所述反射电极130可通过热蒸镀或溅射的方式形成。
所述反射电极130包括第二电荷注入层133，设于所述基板110上且位于所述像素开口区121，所述第二电荷注入层133为透明结构，其材质为氧化铟锡或铟锌氧化物，所述第二电荷注入层133的厚度为10nm～1000nm。
由于所述像素开口区121为长圆形结构，其所述短边1212方向为弧形短边，在后续的喷墨打印技术中，弧形短边处的所述第二电荷注入层133表面容易残留有微量异物，从而影响墨水的铺展效果。
现有技术中，通常采用对所述像素开口区121进行紫外线照射从而去除所述第二电荷注入层133上的光阻残留，但由于紫外线照射会降低所述像素定义层120的疏水性，而疏水性对所述像素开口区121的所述弧形短边影响比较大，所述本实施例中，将所述金属反射层132设于所述第二电荷注入层133下，由于所述金属反射层132具有光线反射的效果，可以在紫外线进行照射时进行二次反射，充分分解所述第二电荷注入层133上的有机物杂物。
所述金属反射层132厚度为50nm～1000nm，其材料为Al、Ag、Mg等合金或者其金属氧化物或其余可以对紫外线进行反射的金属，可通过精细掩膜板或刻蚀的方式形成。
如图3所示，所述金属反射层132的形状与所述像素开口区121相似，均为长圆形结构，包括两条相互平行的第二长边1311和连接所述第二长边1311的第二短边1312，其中，所述第二短边1312为弧形短边；其中，所述金属反射层132与所述像素开口区121的不同点在于，所述金属反射层132的第二短边1312均延伸至所述像素开口区121的第一短边1212之外，这样在进行紫外线照射时，光线进过所述金属反射层132后会反射回来，对所述第一短边1212的所述第二电荷注入层133进行二次照射，充分分解其表面的有机物杂物；另一不同点在于，在垂直于所述像素开口区121的长度方向即宽度方向上，所述金属反射层的两条所述第二长边1311均在所述像素开口区121内且与所述像素开口区121的第一长边1211之间存在一距离，这样在进行紫外线照射时，所述第一长边1211方向的所述第二电荷注入层133只会受到一次紫外线照射，不会影响其表面疏水性；两条所述第二长边1311之间的距离占两条所述第一长边1211之间的距离的50%～99%。
为了避免所述金属反射层132的断面暴露在后续的制程中，本发明的所述第一电荷注入层131设于所述基板110上且位于所述金属反射层132的下方，其厚度为10 nm～1000nm，形状与所述第二电荷注入层133的形状一致。均大于所述像素开口区121，可以保证在后续的喷墨打印制程中，墨水完全铺展于所述第二电荷注入层133上。
如图4所示，本发明还提供了一种显示装置1，其主要改进点和特征均集中体现在所述发光层结构10上，对于显示装置的其他部件，就不再一一赘述。
以上仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种发光层结构，其中，包括
    基板；
    像素定义层，设于所述基板上，所述像素定义层具有像素开口区；以及
    反射电极，包括
    第一电荷注入层，设于所述基板上且位于所述像素开口区，所述第一电荷注入层为透明结构；
    金属反射层，设于所述第一电荷注入层上；
    第二电荷注入层，设于所述金属反射层上且部分裸露于所述像素开口区，所述第二电荷注入层为透明结构。
  2. 根据权利要求1所述的发光层结构，其中，所述像素开口区为长圆形，在其长度方向，所述像素开口区的两侧为弧形边；
    所述金属反射层为长圆形，在其长度方向，所述金属反射层的两侧为弧形边；其中，所述金属反射层的两侧均从所述像素开口区的弧形边处延伸至所述像素开口区之外；
    在垂直于所述像素开口区的长度方向即宽度方向上，所述金属反射层的两侧均在所述像素开口区内且与所述像素开口区之间存在一距离。
  3. 根据权利要求1所述的发光层结构，其中，
    所述第二电荷注入层在所述基板上的投影与所述第一电荷注入层在所述基板上的投影完全重合。
  4. 根据权利要求2所述的发光层结构，其中，
    所述金属反射层宽度方向距离占所述像素开口区宽度方向距离的50%～99%。
  5. 根据权利要求1所述的发光层结构，其中，
    所述第一电荷注入层和所述第二电荷注入层的厚度均为10 nm～1000nm；所述第一电荷注入层和所述第二电荷注入层所用材料均为透明氧化铟锡。
  6. 根据权利要求1所述的发光层结构，其中，
    所述金属反射层的厚度为50 nm～1000nm。
  7. 根据权利要求1所述的发光层结构，其中，
    所述像素开口区在所述基板上的投影完全落入所述第一电荷注入层在所述基板上的投影范围内。
  8. 根据权利要求1所述的发光层结构，其中，
    所述像素定义层的材料为具有疏水性的有机光阻。
  9. 根据权利要求1所述的发光层结构，其中，
    所述金属反射层的材料为Al、Ag、Mg等合金或者其金属氧化物。
  10. 一种显示装置，其中，包括如权利要求1中所述的发光层结构。
PCT/CN2019/103186 2019-06-03 2019-08-29 一种发光层结构及显示装置 Ceased WO2020244072A1 (zh)

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