WO2020238012A1 - 有机发光二极管显示器 - Google Patents

有机发光二极管显示器 Download PDF

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Publication number
WO2020238012A1
WO2020238012A1 PCT/CN2019/115271 CN2019115271W WO2020238012A1 WO 2020238012 A1 WO2020238012 A1 WO 2020238012A1 CN 2019115271 W CN2019115271 W CN 2019115271W WO 2020238012 A1 WO2020238012 A1 WO 2020238012A1
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Prior art keywords
light emitting
emission type
type light
emitting diode
emitting device
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PCT/CN2019/115271
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English (en)
French (fr)
Inventor
徐鸣
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/614,376 priority Critical patent/US20210335899A1/en
Publication of WO2020238012A1 publication Critical patent/WO2020238012A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3035—Edge emission

Definitions

  • the present disclosure relates to the field of display technology, and in particular to an organic light emitting diode display.
  • OLED displays have broad application prospects. OLED displays emit light by driving carrier injection and recombination with organic semiconductor light-emitting materials driven by an electric field. According to the driving mode, OLED displays can be divided into passive driving and active driving, namely direct addressing and thin film transistor (TFT) matrix addressing. Active-driven OLED displays are also called active-matrix organic light-emitting diodes (active-matrix organic light-emitting diodes). light-emitting diode, AMOLED) displays, in which each light-emitting unit is independently controlled by TFT addressing. For large-screen and high-resolution displays, active matrix driving is usually used.
  • OLED displays can be divided into two categories, bottom-emitting type and top-emitting type, according to the light emission mode.
  • the light in the bottom emission type OLED display is emitted from one side of the base substrate, while the light in the top emission type OLED display is emitted from the top.
  • an OLED display with a bottom emission structure is adopted, its opening area needs to avoid the TFT setting area, which causes a serious reduction in the aperture ratio of the panel and affects display performance.
  • limited by engineering technical factors such as the pixel delimitation area of the backplane, the opening of the fine metal mask, and the alignment accuracy, even if the OLED display with the top emission structure is used, the display panel The opening rate is far less than 80%. Therefore, existing AMOLED display products have not yet fully utilized the potential of OLED displays.
  • the purpose of the present disclosure is to provide an OLED display that integrates bottom-emission and top-emission structures so that the effective light-emitting areas are staggered, thereby increasing the effective light-emitting area ratio , And improve the aperture ratio of the display panel.
  • an organic light emitting diode display which includes: a transparent substrate including a first surface and a second surface opposite to the first surface; and a top-emission type light emitting device disposed on all sides of the transparent substrate The first surface, wherein the top emission type light-emitting device includes: a first thin film transistor; a first passivation layer disposed on the first thin film transistor; a first reflective layer disposed on the first passivation layer And electrically connected to the first thin film transistor; a first organic light emitting diode layer disposed on the first reflective layer; and a first transparent conductive layer disposed on the first organic light emitting diode layer; And a bottom emission type light emitting device, which is arranged on the second surface of the transparent substrate, wherein the bottom emission type light emitting device comprises: a second thin film transistor; a second passivation layer, which is arranged on the second thin film transistor A second transparent conductive layer, disposed on the second passivation layer, and electrically connected
  • the light emitting direction of the top emission type light emitting device and the bottom emission type light emitting device are the same.
  • the first reflective layer serves as the anode of the top emission type light emitting device
  • the first transparent conductive layer serves as the cathode of the top emission type light emitting device
  • the organic light emitting diode display includes a plurality of top emission type light emitting devices, and a first pixel defining layer is arranged between two adjacent top emission type light emitting devices.
  • the second transparent conductive layer serves as the anode of the bottom emission type light emitting device
  • the second reflective layer serves as the cathode of the bottom emission type light emitting device
  • the orthographic projection of the second thin film transistor on the transparent substrate and the orthographic projection of the second transparent conductive layer on the transparent substrate do not overlap or are only two The connected parts overlap.
  • the organic light emitting diode display includes a plurality of bottom emission type light emitting devices, and a second pixel defining layer is arranged between two adjacent bottom emission type light emitting devices.
  • the orthographic projection of the first reflective layer on the transparent substrate and the orthographic projection of the second reflective layer on the transparent substrate do not overlap.
  • the present disclosure also provides an organic light emitting diode display, including: a transparent substrate, including a first surface and a second surface opposite to the first surface; a top emission type light emitting device, arranged on the first surface of the transparent substrate , Wherein the top emission type light emitting device includes a first thin film transistor; and a bottom emission type light emitting device disposed on the second surface of the transparent substrate, wherein the bottom emission type light emitting device includes a second thin film transistor, and The orthographic projection of the second thin film transistor of the bottom emission type light emitting device on the top emission type light emitting device at least partially overlaps the first thin film transistor.
  • the light emitting direction of the top emission type light emitting device and the bottom emission type light emitting device are the same.
  • the top emission type light-emitting device further includes: a first passivation layer disposed on the first thin film transistor; a first reflective layer disposed on the first passivation layer And electrically connected to the first thin film transistor; a first organic light emitting diode layer arranged on the first reflective layer; and a first transparent conductive layer arranged on the first organic light emitting diode layer.
  • the first reflective layer serves as the anode of the top emission type light emitting device
  • the first transparent conductive layer serves as the cathode of the top emission type light emitting device
  • the organic light emitting diode display includes a plurality of top emission type light emitting devices, and a first pixel defining layer is arranged between two adjacent top emission type light emitting devices.
  • the bottom emission type light-emitting device further includes: a second passivation layer disposed on the second thin film transistor; a second transparent conductive layer disposed on the second passivation layer On the layer and electrically connected to the second thin film transistor; a second organic light emitting diode layer disposed on the second transparent conductive layer; and a second reflective layer disposed on the second organic light emitting diode layer .
  • the second transparent conductive layer serves as the anode of the bottom emission type light emitting device
  • the second reflective layer serves as the cathode of the bottom emission type light emitting device
  • the orthographic projection of the second thin film transistor on the transparent substrate and the orthographic projection of the second transparent conductive layer on the transparent substrate do not overlap or are only two The connected parts overlap.
  • the organic light emitting diode display includes a plurality of bottom emission type light emitting devices, and a second pixel defining layer is arranged between two adjacent bottom emission type light emitting devices.
  • the top emission type light-emitting device further includes a first reflective layer
  • the bottom emission type light-emitting device further includes a second reflective layer, wherein the first reflective layer is in the transparent layer.
  • the orthographic projection on the substrate and the orthographic projection of the second reflective layer on the transparent substrate do not overlap.
  • the present disclosure forms an AMOLED display panel that integrates top-emission and bottom-emission device structures by forming an organic light-emitting diode display, so that when the organic light-emitting diode display is working, the top-emission The bottom emission type light emitting device emits light in the same direction.
  • the organic light emitting diode display of the present disclosure has a higher total opening area and a pixel density equivalent to a double.
  • FIG. 1 shows a schematic diagram of an organic light emitting diode display according to a preferred embodiment of the present disclosure.
  • FIG. 1 shows a schematic diagram of an organic light emitting diode display 1 according to a preferred embodiment of the present disclosure, wherein FIG. 1 only shows a partial cross-section of the organic light emitting diode display 1.
  • the organic light emitting diode display 1 is an organic light emitting diode (active matrix organic light emitting diode) that combines a top emission type and a bottom emission type device structure. light emitting diode, AMOLED) display.
  • the organic light emitting diode display 1 includes a transparent substrate 10, a plurality of top emission type light emitting devices 20, and a plurality of bottom emission type light emitting devices 30.
  • the transparent substrate 10 includes a first surface 11 and a second surface 12, wherein the first surface 11 is opposite to the second surface 12.
  • a plurality of top emission type light emitting devices 20 are arranged at intervals on the first surface 11 of the transparent substrate 10, and a plurality of bottom emission type light emitting devices 30 are arranged at intervals on the first surface 11 and the second surface 12 of the transparent substrate 10. It should be noted that each top emission type light emitting device 20 or each bottom emission type light emitting device 30 represents one pixel unit.
  • the effective light emitting areas of the plurality of top emission type light emitting devices 20 and the plurality of bottom emission type light emitting devices 30 are arranged alternately with each other so that light from either the top emission type light emitting device 20 or the bottom emission type light emitting device 30 can smoothly reach the outside .
  • the material of the transparent substrate 10 includes a light-transmissive material, such as glass, polyethylene terephthalate (PET), and the like.
  • each top emission type light emitting device 20 includes a first thin film transistor 21, a first passivation layer 22, a first reflective layer 23, a first organic light emitting diode layer 24, a first transparent conductive layer 25, and The first pixel defining layer 26.
  • the first thin film transistor 21 is provided on the first surface 11 of the transparent substrate 10.
  • the first passivation layer 22 is provided on the first thin film transistor 21 and the transparent substrate 10.
  • the first reflective layer 23 and the first pixel defining layer 26 are both disposed on the first passivation layer 22, and the first reflective layer 23 and the first pixel defining layer 26 are alternately arranged with each other.
  • the first organic light emitting diode layer 24 is disposed on the first reflective layer 23.
  • the first transparent conductive layer 25 is disposed on the first organic light emitting diode layer 24 and the first pixel defining layer 26.
  • the first pixel defining layer 26 is disposed between two adjacent top emission type light emitting devices 20.
  • the first reflective layer 23 is made of a light reflective material, such as an aluminum metal film layer, or a composite film layer composed of indium tin oxide (ITO) and silver metal.
  • the first transparent conductive layer 25 is made of a light-transmissive material, such as ultra-thin magnesium (Mg) silver (Ag) alloy, ITO, indium zinc oxide (IZO), and the like.
  • the first reflective layer 23 is electrically connected to the first thin film transistor 21.
  • the first reflective layer 23 and the first transparent conductive layer 25 are respectively disposed on both sides of the first organic light emitting diode layer 24, so the first reflective layer 23 serves as the anode of the top emission type light emitting device 20, and the first transparent conductive layer 25 serves as The cathode of the top emission type light emitting device 20.
  • electrons and holes are respectively injected and migrated from the first transparent conductive layer 25 and the first reflective layer 23 to the first organic light emitting diode layer 24, and recombine in the first organic light emitting diode layer 24 to form excitons
  • the light-emitting molecules in the first organic light-emitting diode layer 24 are excited, and then emit light toward the light emission direction 2.
  • each bottom emission type light emitting device 30 includes a second thin film transistor 31, a second passivation layer 32, a second transparent conductive layer 33, a second organic light emitting diode layer 34, a second reflective layer 35, and The second pixel defining layer 36.
  • the second thin film transistor 31 is disposed on the second surface 12 of the transparent substrate 10.
  • the second passivation layer 32 is provided on the second thin film transistor 31 and the transparent substrate 10.
  • the second transparent conductive layer 33 and the second pixel defining layer 36 are both disposed on the second passivation layer 32, and the second reflective layer 35 and the second pixel defining layer 36 are alternately arranged with each other.
  • the second organic light emitting diode layer 34 is disposed on the second transparent conductive layer 33.
  • the second reflective layer 35 is disposed on the second organic light emitting diode layer 34 and the second pixel defining layer 36.
  • the second pixel defining layer 36 is disposed between two adjacent bottom emission type light emitting devices 30.
  • the second reflective layer 35 is made of a light reflective material, such as an aluminum metal film layer, or a composite film layer composed of indium tin oxide (ITO) and silver metal.
  • the second transparent conductive layer 33 is made of a light-transmissive material, such as ultra-thin magnesium (Mg) silver (Ag) alloy, ITO, indium zinc oxide (IZO), and the like. The second transparent conductive layer 33 is electrically connected to the second thin film transistor 31.
  • the second transparent conductive layer 33 and the second reflective layer 35 are respectively disposed on both sides of the second organic light emitting diode layer 34, so the second transparent conductive layer 33 serves as the anode of the bottom emission type light emitting device 30, and the second reflective layer 35 serves as The cathode of the bottom emission type light emitting device 30.
  • electrons and holes are respectively injected and migrated from the second transparent conductive layer 33 and the second reflective layer 35 to the second organic light emitting diode layer 34, and recombine to form excitons in the second organic light emitting diode layer 34
  • the light-emitting molecules in the second organic light-emitting diode layer 34 are excited, and then emit light toward the light emission direction 2. That is, the light emission direction 2 of the top emission type light emitting device 20 and the bottom emission type light emitting device 30 are the same.
  • the second thin film transistor 31 of the bottom emission type light emitting device 30 and the first thin film transistor 21 of the top emission type light emitting device 20 at least partially overlap in the vertical direction (parallel to the light emission direction 2). That is, the orthographic projection of the second thin film transistor 31 of the bottom emission type light emitting device 30 on the top emission type light emitting device 20 at least partially overlaps the first thin film transistor 21.
  • the orthographic projection of the second thin film transistor 31 of the bottom emission type light emitting device 30 on the transparent substrate 10 and the orthographic projection of the second transparent conductive layer 33 on the transparent substrate 10 do not overlap or are only connected to the two. 37 overlap.
  • the orthographic projection of the first reflective layer 23 of the top emission type light emitting device 20 on the transparent substrate 10 and the orthographic projection of the second reflective layer 35 of the bottom emission type light emitting device 30 on the transparent substrate 10 do not overlap.
  • the organic light emitting diode display 1 of the present disclosure forms an AMOLED display panel integrating top emission type and bottom emission type device structures, and the multiple top emission type light emitting devices 20 and the multiple bottom emission type light emitting devices 30 effectively emit light. The areas are arranged alternately.
  • the top emission type light emitting device 20 and the bottom emission type light emitting device 30 emit light toward the same side of the display panel, that is, the light emission direction 2 of the top emission type light emitting device 20 and the bottom emission type light emitting device 30 are the same, so that both Either the top emission type light emitting device 20 or the bottom emission type light emitting device 30 can smoothly reach the outside. Therefore, the ratio of the effective light-emitting area of the organic light-emitting diode display 1 can be effectively increased, and the aperture ratio and pixel density can be greatly improved.
  • each sub-pixel of the organic light emitting diode display 1 of the present disclosure (that is, each top emission type light emitting device 20 or each bottom emission type
  • the current value required by the type light emitting device 30) will be significantly lower than that of the display panel of the prior art. Since the magnitude of the current applied to the OLED display during operation will directly affect its life span, the organic light emitting diode display 1 of the present disclosure will have a longer life span.
  • the present disclosure forms an AMOLED display panel that integrates top-emission and bottom-emission device structures by forming the organic light-emitting diode display 1 so that when the organic light-emitting diode display 1 is working, the two sides of the transparent substrate 10
  • the top emission type light emitting device 20 and the bottom emission type light emitting device 30 emit light in the same direction.
  • the organic light emitting diode display 1 of the present disclosure has a higher total opening area and a pixel density equivalent to a double.

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Abstract

一种有机发光二极管显示器，包含：透明基板(10)；顶发射型发光器件(20)，设置在所述透明基板(10)上且包含第一薄膜晶体管(21)；以及底发射型发光器件(30)，设置在所述透明基板(10)上且包含第二薄膜晶体管(31)，其中所述底发射型发光器件(30)的所述第二薄膜晶体管(31)在所述顶发射型发光器件(20)上的正投影与所述第一薄膜晶体管(21)至少一部分重叠。

Description

有机发光二极管显示器 技术领域
本揭示涉及显示技术领域，特别是涉及一种有机发光二极管显示器。
 背景技术
有机发光二极管（organiclight-emitting diode，OLED）显示器拥有广阔的应用前景。OLED显示器是通过将有机半导体发光材料在电场驱动下驱使载流子注入和复合而发光。OLED显示器按照驱动方式可以分为无源驱动和有源驱动两大类，即直接寻址和薄膜晶体管（thin film transistor，TFT）矩阵寻址两类。有源驱动型的OLED显示器也称为有源矩阵有机发光二极管（active-matrix organic light-emitting diode，AMOLED）显示器，其中每个发光单元都由TFT寻址独立控制。对于大屏幕且高分辨率的显示器，通常采用有源矩阵驱动方式。
OLED显示器按照光的出射方式可以分为底发射型和顶发射型两大类。底发射型OLED显示器中的光是从衬底基板的一侧出射，而顶发射型OLED显示器中的光是从顶端出射。然而，若采用底发射型结构的OLED显示器，其开口区域需要避开TFT的设置区域，造成面板开口率的严重缩小，影响显示性能。另一方面，受限于背板的像素界定区、精细金属遮挡板（fine metal mask）开孔、以及对位精度等工程技术因子的制约，即使采用顶发射型结构的OLED显示器，其显示面板的开口率也远远小于80%。因此，现有的AMOLED显示产品仍未充分发挥出OLED显示器的潜力。
有鉴于此，有必要提出一种具有高开口率的OLED显示器，以解决现有技术中存在的问题。
 技术问题
为解决上述现有技术的问题，本揭示的目的在于提供一种OLED显示器，通过将底发射型和顶发射型结构整合在一起，使其有效发光区域交错排布，进而增加有效发光面积的比例，和提高显示面板的开口率。
 技术解决方案
为达成上述目的，本揭示提供一种有机发光二极管显示器，包含：透明基板，包含第一面和相对所述第一面的第二面；顶发射型发光器件，设置在所述透明基板的所述第一面，其中所述顶发射型发光器件包含：第一薄膜晶体管；第一钝化层，设置在所述第一薄膜晶体管上；第一反射层，设置在所述第一钝化层上，且与所述第一薄膜晶体管电性连接；第一有机发光二极管层，设置在所述第一反射层上；以及第一透明导电层，设置在所述第一有机发光二极管层上；以及底发射型发光器件，设置在所述透明基板的所述第二面，其中所述底发射型发光器件包含：第二薄膜晶体管；第二钝化层，设置在所述第二薄膜晶体管上；第二透明导电层，设置在所述第二钝化层上，且与所述第二薄膜晶体管电性连接；第二有机发光二极管层，设置在所述第二透明导电层上；以及第二反射层，设置在所述第二有机发光二极管层上；其中所述底发射型发光器件的所述第二薄膜晶体管在所述顶发射型发光器件上的正投影与所述第一薄膜晶体管至少一部分重叠。
本揭示其中之一优选实施例中，所述顶发射型发光器件与所述底发射型发光器件的光出射方向相同。
本揭示其中之一优选实施例中，所述第一反射层作为所述顶发射型发光器件的阳极，以及所述第一透明导电层作为所述顶发射型发光器件的阴极。
本揭示其中之一优选实施例中，所述有机发光二极管显示器包含多个所述顶发射型发光器件，且相邻的两个顶发射型发光器件之间设置有第一像素界定层。
本揭示其中之一优选实施例中，所述第二透明导电层作为所述底发射型发光器件的阳极，以及所述第二反射层作为所述底发射型发光器件的阴极。
本揭示其中之一优选实施例中，所述第二薄膜晶体管在所述透明基板上的正投影与所述第二透明导电层在所述透明基板上的正投影不重叠或者是仅有在两者连接的部分重叠。
本揭示其中之一优选实施例中，所述有机发光二极管显示器包含多个所述底发射型发光器件，且相邻的两个底发射型发光器件之间设置有第二像素界定层。
本揭示其中之一优选实施例中，所述第一反射层在所述透明基板上的正投影与所述第二反射层在所述透明基板上的正投影不重叠。
本揭示还提供一种有机发光二极管显示器，包含：透明基板，包含第一面和相对所述第一面的第二面；顶发射型发光器件，设置在所述透明基板的所述第一面，其中所述顶发射型发光器件包含第一薄膜晶体管；以及底发射型发光器件，设置在所述透明基板的所述第二面，其中所述底发射型发光器件包含第二薄膜晶体管，以及所述底发射型发光器件的所述第二薄膜晶体管在所述顶发射型发光器件上的正投影与所述第一薄膜晶体管至少一部分重叠。
本揭示其中之一优选实施例中，所述顶发射型发光器件与所述底发射型发光器件的光出射方向相同。
本揭示其中之一优选实施例中，所述顶发射型发光器件还包含：第一钝化层，设置在所述第一薄膜晶体管上；第一反射层，设置在所述第一钝化层上，且与所述第一薄膜晶体管电性连接；第一有机发光二极管层，设置在所述第一反射层上；以及第一透明导电层，设置在所述第一有机发光二极管层上。
本揭示其中之一优选实施例中，所述第一反射层作为所述顶发射型发光器件的阳极，以及所述第一透明导电层作为所述顶发射型发光器件的阴极。
本揭示其中之一优选实施例中，所述有机发光二极管显示器包含多个所述顶发射型发光器件，且相邻的两个顶发射型发光器件之间设置有第一像素界定层。
本揭示其中之一优选实施例中，所述底发射型发光器件还包含：第二钝化层，设置在所述第二薄膜晶体管上；第二透明导电层，设置在所述第二钝化层上，且与所述第二薄膜晶体管电性连接；第二有机发光二极管层，设置在所述第二透明导电层上；以及第二反射层，设置在所述第二有机发光二极管层上。
本揭示其中之一优选实施例中，所述第二透明导电层作为所述底发射型发光器件的阳极，以及所述第二反射层作为所述底发射型发光器件的阴极。
本揭示其中之一优选实施例中，所述第二薄膜晶体管在所述透明基板上的正投影与所述第二透明导电层在所述透明基板上的正投影不重叠或者是仅有在两者连接的部分重叠。
本揭示其中之一优选实施例中，所述有机发光二极管显示器包含多个所述底发射型发光器件，且相邻的两个底发射型发光器件之间设置有第二像素界定层。
本揭示其中之一优选实施例中，所述顶发射型发光器件还包含第一反射层，以及所述底发射型发光器件还包含第二反射层，其中所述第一反射层在所述透明基板上的正投影与所述第二反射层在所述透明基板上的正投影不重叠。
 有益效果
相较于先前技术，本揭示通过将有机发光二极管显示器形成整合有顶发射型和底发射型器件结构的AMOLED显示面板，使得当有机发光二极管显示器在工作时，位在透明基板两侧的顶发射型发光器件与底发射型发光器件向同一方向发光。相比于现有技术，本揭示的有机发光二极管显示器具有更高的总开口面积和相当于提高一倍的像素密度。
 附图说明
图1显示本揭示优选实施例的有机发光二极管显示器的示意图。
 本发明的实施方式
为了让本揭示的上述及其他目的、特征、优点能更明显易懂，下文将特举本揭示优选实施例，并配合所附图式，作详细说明如下。
请参照图1，其显示本揭示优选实施例的有机发光二极管显示器1的示意图，其中图1仅显示有机发光二极管显示器1的局部剖面。有机发光二极管显示器1为一种结合顶发射型和底发射型器件结构的有机发光二极管（active matrix organic light emitting diode, AMOLED）显示器。有机发光二极管显示器1包含透明基板10、多个顶发射型发光器件20、和多个底发射型发光器件30。透明基板10包含第一面11和第二面12，其中第一面11相对于第二面12。多个顶发射型发光器件20间隔地设置在透明基板10的第一面11，以及多个底发射型发光器件30间隔地设置在透明基板10的第一面11第二面12。应当注意的是，每一顶发射型发光器件20或每一底发射型发光器件30代表一个像素单元。多个顶发射型发光器件20和多个底发射型发光器件30的有效发光区域彼此交错地设置，使得无论是来自顶发射型发光器件20还是底发射型发光器件30的光线都能够顺利到达外部。优选地，透明基板10的材质包含可透光的材料，例如玻璃、聚乙烯对苯二甲酸酯（polyethylene terephthalate，PET）等。
如图1所示，每一顶发射型发光器件20包含第一薄膜晶体管21、第一钝化层22、第一反射层23、第一有机发光二极管层24、第一透明导电层25、和第一像素界定层26。第一薄膜晶体管21设置在透明基板10的第一面11。第一钝化层22设置在第一薄膜晶体管21和透明基板10上。第一反射层23和第一像素界定层26皆设置在第一钝化层22上，且第一反射层23和第一像素界定层26彼此交错设置。第一有机发光二极管层24设置在第一反射层23上。第一透明导电层25设置在第一有机发光二极管层24和第一像素界定层26上。第一像素界定层26设置在相邻的两个顶发射型发光器件20之间。
如图1所示，第一反射层23是由光反射材料制成，例如铝金属膜层，或者是由铟锡氧化物（indium tin oxide，ITO）和银金属构成的复合膜层等。第一透明导电层25是由可透光材料制成，例如超薄镁（Mg）银（Ag）合金、ITO、氧化铟锌（indium zinc oxide，IZO）等。第一反射层23与第一薄膜晶体管21电性连接。第一反射层23和第一透明导电层25分别设置在第一有机发光二极管层24的两侧，如此第一反射层23作为顶发射型发光器件20的阳极，以及第一透明导电层25作为顶发射型发光器件20的阴极。在一定电压驱动下，电子和电洞分别从第一透明导电层25和第一反射层23注入和迁移到第一有机发光二极管层24，并在第一有机发光二极管层24中复合形成激子使第一有机发光二极管层24内的发光分子激发，进而朝着光出射方向2发光。
如图1所示，每一底发射型发光器件30包含第二薄膜晶体管31、第二钝化层32、第二透明导电层33、第二有机发光二极管层34、第二反射层35、和第二像素界定层36。第二薄膜晶体管31设置在透明基板10的第二面12。第二钝化层32设置在第二薄膜晶体管31和透明基板10上。第二透明导电层33和第二像素界定层36皆设置在第二钝化层32上，且第二反射层35和第二像素界定层36彼此交错设置。第二有机发光二极管层34设置在第二透明导电层33上。第二反射层35设置在第二有机发光二极管层34和第二像素界定层36上。第二像素界定层36设置在相邻的两个底发射型发光器件30之间。
如图1所示，第二反射层35是由光反射材料制成，例如铝金属膜层，或者是由铟锡氧化物（indium tin oxide，ITO）和银金属构成的复合膜层等。第二透明导电层33是由可透光材料制成，例如超薄镁（Mg）银（Ag）合金、ITO、氧化铟锌（indium zinc oxide，IZO）等。第二透明导电层33与第二薄膜晶体管31电性连接。第二透明导电层33和第二反射层35分别设置在第二有机发光二极管层34的两侧，如此第二透明导电层33作为底发射型发光器件30的阳极，以及第二反射层35作为底发射型发光器件30的阴极。在一定电压驱动下，电子和电洞分别从第二透明导电层33和第二反射层35注入和迁移到第二有机发光二极管层34，并在第二有机发光二极管层34中复合形成激子使第二有机发光二极管层34内的发光分子激发，进而朝着光出射方向2发光。也就是说，顶发射型发光器件20与底发射型发光器件30的光出射方向2相同。
如图1所示，底发射型发光器件30的第二薄膜晶体管31和顶发射型发光器件20的第一薄膜晶体管21在垂直方向（与光出射方向2平行）上至少一部分重叠。也就是说，底发射型发光器件30的第二薄膜晶体管31在顶发射型发光器件20上的正投影与第一薄膜晶体管21至少一部分重叠。优选地，底发射型发光器件30的第二薄膜晶体管31在透明基板10上的正投影与第二透明导电层33在透明基板10上的正投影不重叠或者是仅有在两者连接的部分37重叠。优选地，顶发射型发光器件20的第一反射层23在透明基板10上的正投影与底发射型发光器件30的第二反射层35在透明基板10上的正投影不重叠。通过上述设计，本揭示的有机发光二极管显示器1形成整合有顶发射型和底发射型器件结构的AMOLED显示面板，并且多个顶发射型发光器件20和多个底发射型发光器件30的有效发光区域彼此交错地设置。应当注意的是，顶发射型发光器件20与底发射型发光器件30向显示面板的同一侧发光，即顶发射型发光器件20与底发射型发光器件30的光出射方向2相同，使得无论是来自顶发射型发光器件20还是底发射型发光器件30的光线都能够顺利到达外部。因此，可有效地增加有机发光二极管显示器1的有效发光面积的比例，大幅度地提高开口率和像素密度。另一方面，由于总开口面积和像素密度的提高，在要求同等显示亮度的情况下，本揭示的有机发光二极管显示器1的各个子像素（即每一顶发射型发光器件20或每一底发射型发光器件30）所需要施加的电流值将会明显低于现有技术的显示面板。由于OLED显示器在工作时施加的电流值大小会直接影响着其寿命的长短，因此，本揭示的有机发光二极管显示器1将会有更长的使用寿命。
综上所述，本揭示通过将有机发光二极管显示器1形成整合有顶发射型和底发射型器件结构的AMOLED显示面板，使得当有机发光二极管显示器1在工作时，位在透明基板10两侧的顶发射型发光器件20与底发射型发光器件30向同一方向发光。相比于现有技术，本揭示的有机发光二极管显示器1具有更高的总开口面积和相当于提高一倍的像素密度。
以上仅是本揭示的优选实施方式，应当指出，对于所属领域技术人员，在不脱离本揭示原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本揭示的保护范围。

Claims (18)

  1. 一种有机发光二极管显示器，包含：
    透明基板，包含第一面和相对所述第一面的第二面；
    顶发射型发光器件，设置在所述透明基板的所述第一面，其中所述顶发射型发光器件包含：
    第一薄膜晶体管；
    第一钝化层，设置在所述第一薄膜晶体管上；
    第一反射层，设置在所述第一钝化层上，且与所述第一薄膜晶体管电性连接；
    第一有机发光二极管层，设置在所述第一反射层上；以及
    第一透明导电层，设置在所述第一有机发光二极管层上；以及
    底发射型发光器件，设置在所述透明基板的所述第二面，其中所述底发射型发光器件包含：
    第二薄膜晶体管；
    第二钝化层，设置在所述第二薄膜晶体管上；
    第二透明导电层，设置在所述第二钝化层上，且与所述第二薄膜晶体管电性连接；
    第二有机发光二极管层，设置在所述第二透明导电层上；以及
    第二反射层，设置在所述第二有机发光二极管层上；
    其中所述底发射型发光器件的所述第二薄膜晶体管在所述顶发射型发光器件上的正投影与所述第一薄膜晶体管至少一部分重叠。
  2. 如权利要求1的有机发光二极管显示器，其中所述顶发射型发光器件与所述底发射型发光器件的光出射方向相同。
  3. 如权利要求1的有机发光二极管显示器，其中所述第一反射层作为所述顶发射型发光器件的阳极，以及所述第一透明导电层作为所述顶发射型发光器件的阴极。
  4. 如权利要求1的有机发光二极管显示器，其中所述有机发光二极管显示器包含多个所述顶发射型发光器件，且相邻的两个顶发射型发光器件之间设置有第一像素界定层。
  5. 如权利要求1的有机发光二极管显示器，其中所述第二透明导电层作为所述底发射型发光器件的阳极，以及所述第二反射层作为所述底发射型发光器件的阴极。
  6. 如权利要求1的有机发光二极管显示器，其中所述第二薄膜晶体管在所述透明基板上的正投影与所述第二透明导电层在所述透明基板上的正投影不重叠或者是仅有在两者连接的部分重叠。
  7. 如权利要求1的有机发光二极管显示器，其中所述有机发光二极管显示器包含多个所述底发射型发光器件，且相邻的两个底发射型发光器件之间设置有第二像素界定层。
  8. 如权利要求1的有机发光二极管显示器，其中所述第一反射层在所述透明基板上的正投影与所述第二反射层在所述透明基板上的正投影不重叠。
  9. 一种有机发光二极管显示器，包含：
    透明基板，包含第一面和相对所述第一面的第二面；
    顶发射型发光器件，设置在所述透明基板的所述第一面，其中所述顶发射型发光器件包含第一薄膜晶体管；以及
    底发射型发光器件，设置在所述透明基板的所述第二面，其中所述底发射型发光器件包含第二薄膜晶体管，以及所述底发射型发光器件的所述第二薄膜晶体管在所述顶发射型发光器件上的正投影与所述第一薄膜晶体管至少一部分重叠。
  10. 如权利要求9的有机发光二极管显示器，其中所述顶发射型发光器件与所述底发射型发光器件的光出射方向相同。
  11. 如权利要求9的有机发光二极管显示器，其中所述顶发射型发光器件还包含：
    第一钝化层，设置在所述第一薄膜晶体管上；
    第一反射层，设置在所述第一钝化层上，且与所述第一薄膜晶体管电性连接；
    第一有机发光二极管层，设置在所述第一反射层上；以及
    第一透明导电层，设置在所述第一有机发光二极管层上。
  12. 如权利要求11的有机发光二极管显示器，其中所述第一反射层作为所述顶发射型发光器件的阳极，以及所述第一透明导电层作为所述顶发射型发光器件的阴极。
  13. 如权利要求11的有机发光二极管显示器，其中所述有机发光二极管显示器包含多个所述顶发射型发光器件，且相邻的两个顶发射型发光器件之间设置有第一像素界定层。
  14. 如权利要求9的有机发光二极管显示器，其中所述底发射型发光器件还包含：
    第二钝化层，设置在所述第二薄膜晶体管上；
    第二透明导电层，设置在所述第二钝化层上，且与所述第二薄膜晶体管电性连接；
    第二有机发光二极管层，设置在所述第二透明导电层上；以及
    第二反射层，设置在所述第二有机发光二极管层上。
  15. 如权利要求14的有机发光二极管显示器，其中所述第二透明导电层作为所述底发射型发光器件的阳极，以及所述第二反射层作为所述底发射型发光器件的阴极。
  16. 如权利要求14的有机发光二极管显示器，其中所述第二薄膜晶体管在所述透明基板上的正投影与所述第二透明导电层在所述透明基板上的正投影不重叠或者是仅有在两者连接的部分重叠。
  17. 如权利要求14的有机发光二极管显示器，其中所述有机发光二极管显示器包含多个所述底发射型发光器件，且相邻的两个底发射型发光器件之间设置有第二像素界定层。
  18. 如权利要求9的有机发光二极管显示器，其中所述顶发射型发光器件还包含第一反射层，以及所述底发射型发光器件还包含第二反射层，其中所述第一反射层在所述透明基板上的正投影与所述第二反射层在所述透明基板上的正投影不重叠。
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