WO2020232962A1 - Substrat de film coloré et son procédé de préparation - Google Patents

Substrat de film coloré et son procédé de préparation Download PDF

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Publication number
WO2020232962A1
WO2020232962A1 PCT/CN2019/112238 CN2019112238W WO2020232962A1 WO 2020232962 A1 WO2020232962 A1 WO 2020232962A1 CN 2019112238 W CN2019112238 W CN 2019112238W WO 2020232962 A1 WO2020232962 A1 WO 2020232962A1
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WO
WIPO (PCT)
Prior art keywords
layer
tft
black matrix
substrate
sensing
Prior art date
Application number
PCT/CN2019/112238
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English (en)
Chinese (zh)
Inventor
刘念
Original Assignee
深圳市华星光电半导体显示技术有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication of WO2020232962A1 publication Critical patent/WO2020232962A1/fr

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

Definitions

  • the invention relates to the technical field of display panels, in particular to a color film substrate and a preparation method thereof.
  • the display device can complete in cell fingerprint recognition, touch sensing, etc., reducing the cost and thickness of the device, and improving product competitiveness.
  • An object of the present invention is to provide a color filter substrate, which can solve the problem of thicker display panel thickness caused by the capacitive sensor fabricated on the outer substrate of the box in the prior art.
  • the present invention provides a color filter substrate, which includes a substrate layer on which a switching TFT and a sensing TFT are provided, and a capacitance sensing electrode layer is also provided on the substrate layer as a self-capacitance sensor, It is connected with the source and drain of the sensing TFT to amplify the signal; the switching TFT controls the switching of the self-capacitance sensor.
  • the sensing TFT includes one of a top gate structure TFT or a bottom gate structure TFT.
  • the switching TFT includes one of a top gate structure TFT or a bottom gate structure TFT.
  • the material used for the capacitance sensing electrode layer includes one of indium zinc oxide, indium gallium zinc oxide, indium tin oxide, or aluminum doped zinc oxide or silver nanowires.
  • a black matrix layer is provided on the substrate layer, and the sensing TFT and the switching TFT are provided on the black matrix layer.
  • the black matrix layer is disposed on one side of the capacitive sensing electrode layer.
  • the two are arranged in the same layer, and both are arranged on the substrate layer.
  • the black matrix layer is partially disposed on the capacitance sensing electrode layer. That is, at the position where the black matrix layer and the capacitance sensing electrode layer are connected, the black matrix layer is stacked upward on the capacitance sensing electrode layer, wherein the black matrix layer is stacked on the capacitance sensing electrode layer A part of the black matrix layer may only cover a part of the capacitive sensing electrode layer downward.
  • an insulating layer is further provided on the capacitive sensing electrode layer and the black matrix layer, and the sensing TFT and the switching TFT are provided on the insulating layer.
  • an active drain layer, an active layer, a gate insulating layer, a gate layer, an organic layer, an OC layer, and a common electrode layer are sequentially arranged on the insulating layer to form The sensing TFT and the switching TFT.
  • the material used for the insulating layer includes silicon oxide or silicon nitride.
  • the material used for the source and drain layers includes molybdenum, aluminum, or copper.
  • the material used for the active layer includes oxide semiconductor, amorphous silicon, polysilicon, or organic semiconductor.
  • the material used for the common electrode layer includes one of indium zinc oxide, indium gallium zinc oxide, indium tin oxide, or aluminum doped zinc oxide or silver nanowires.
  • the material used for the substrate layer includes glass or plastic substrate or polyimide film.
  • Another object of the present invention is to provide a method for preparing the color filter substrate of the present invention, which includes the following steps:
  • Step S1 providing a substrate layer, and disposing a capacitance sensing electrode layer on the substrate layer as a self-capacitance sensor;
  • Step S2 coating a black matrix layer, and forming the black matrix layer pattern after etching
  • Step S3 deposit an insulating layer, and provide first openings on the insulating layer and the black matrix layer;
  • Step S4 deposit a source and drain layer, and form the source and drain layer pattern after etching
  • Step S5 deposit an active layer, a gate insulating layer and a gate layer in sequence
  • Step S6 The gate layer is etched to form the gate layer pattern, and the gate insulating layer and the active layer are etched using a self-aligned process to form the gate insulating layer pattern and the active layer.
  • Layer pattern
  • Step S7 coating the organic layer, the OC layer and the common electrode layer in sequence.
  • coating the OC layer can reduce the capacitance between the gate layer and the common electrode, and further can flatten the terrain.
  • the present invention provides a color filter substrate and a preparation method thereof.
  • the capacitive sensor By arranging the capacitive sensor on the color filter substrate, on the one hand, the distance of the sensing capacitance is reduced and the capacitive sensor in the screen is increased. Resolution, can realize the display surface induction (In cell) Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.
  • In cell In cell
  • FIG. 1 is a schematic diagram of the structure of a color filter substrate provided by Embodiment 1 of the present invention.
  • FIG. 2 is a flowchart of a method for preparing a color filter substrate provided in Embodiment 2 of the present invention
  • step S1 of the preparation method provided in the embodiment 2 of the present invention is a schematic diagram of the structure of the color filter substrate in step S1 of the preparation method provided in the embodiment 2 of the present invention
  • step S2 is a schematic diagram of the structure of the color filter substrate in step S2 of the preparation method provided by the embodiment 2 of the present invention.
  • step S3 of the preparation method provided in the embodiment 2 of the present invention is a schematic diagram of the structure of the color film substrate in step S3 of the preparation method provided in the embodiment 2 of the present invention.
  • FIG. 6 is a schematic diagram of the structure of the color filter substrate at step S4 in the preparation method provided by the embodiment 2 of the present invention.
  • FIG. 7 is a schematic diagram of the structure of the color filter substrate in step S5 of the preparation method provided in the embodiment 2 of the present invention.
  • step S6 of the preparation method provided in the embodiment 2 of the present invention is a schematic diagram of the structure of the color filter substrate in step S6 of the preparation method provided in the embodiment 2 of the present invention.
  • FIG. 9 is a schematic diagram of the structure of the color filter substrate in step S7 of the preparation method provided in Embodiment 2 of the present invention.
  • FIG. 1 shows a schematic diagram of the structure of the thin color filter substrate provided by this embodiment, including a substrate layer 100, a capacitive sensing electrode layer 11, and a black matrix layer arranged in sequence. 12. Insulation layer 13.
  • the color film substrate also includes a sensing TFT1 and a switching TFT2 composed of a source and drain layer 14, an active layer 15, a gate insulating layer 16, a gate layer 17, an organic layer 18, an OC layer 19, and a common electrode layer 110 arranged in sequence. .
  • the black matrix layer 12 is arranged on one side of the capacitive sensing electrode layer 11. In other words, the two are arranged in the same layer, and both are arranged on the substrate layer 100. At the position where the black matrix layer 12 and the capacitive sensing electrode layer 11 are connected, the black matrix layer 12 is stacked upward on the capacitive sensing electrode layer 11, and part of the black matrix layer 12 stacked on the capacitive sensing electrode layer 11 is only downward. Cover part of the capacitive sensing electrode layer 11.
  • the insulating layer 13 is arranged on the capacitive sensing electrode layer 11 and the black matrix layer 12, the source and drain layer 14 is arranged on the insulating layer 13, the active layer 15 is arranged on the source and drain layer 14, and the gate insulating layer 16 is arranged on the On the source layer 15, the gate layer 17 is arranged on the gate insulating layer 16, the organic layer 18 is arranged on the gate layer 17, the OC layer 19 is arranged on the organic layer 18, and the common electrode layer 110 is arranged on the OC layer 19.
  • the insulating layer 13 and the black matrix layer 12 are provided with a first via hole 131, and the source and drain layer 14 is filled in the first via hole 131.
  • the capacitance sensing electrode layer 11 serves as a self-capacitance sensor, which is connected to the source and drain of the sensing TFT1 and can function to amplify signals.
  • the switching TFT2 can control the switching of the capacitance sensing electrode layer 11 as a self-capacitance sensor.
  • the capacitive sensing electrode layer 11 may specifically be indium tin oxide (ITO, Indium Tin Oxides) or indium zinc oxide (IZO, Idium Zinc Oxides) or indium gallium zinc oxide (IGZO, Indium Gallium Zinc Oxides) or aluminum doped zinc oxide or silver nanowires, etc., are not limited here.
  • the active layer 15 can be made of oxide semiconductor, amorphous silicon, polysilicon, or organic semiconductor, etc., which is not limited herein.
  • both the sensing TFT and the switching TFT adopt a top-gate structure TFT.
  • the sensing TFT and the switching TFT are not limited to a TFT adopting a top-gate structure, and may also adopt a bottom-gate structure TFT.
  • the capacitive sensing electrode layer 11 on the color filter substrate, on the one hand, the distance of the sensing capacitor is reduced, and the resolution of the capacitive sensor in the screen is increased, so that in-plane sensing (In cell) Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.
  • In cell in-plane sensing
  • FIG. 2 shows a flowchart of the method for preparing the color filter substrate provided by this embodiment, including the following steps:
  • Step S1 Provide a substrate layer 100, and fabricate a capacitive sensing electrode layer 11 on the substrate layer 100 as a self-capacitance sensor;
  • FIG. 3 shows a schematic diagram of the structure of the color filter substrate in step S1 of the manufacturing method provided by this embodiment.
  • the substrate Zeeberg 100 can be made of glass or plastic substrate or polyimide film, etc., which is not limited herein.
  • the capacitive sensing electrode layer 11 may specifically be indium tin oxide (ITO, Indium Tin Oxides) or indium zinc oxide (IZO, Idium Zinc Oxides) or indium gallium zinc oxide (IGZO, Indium Gallium Zinc Oxides) or aluminum doped zinc oxide or silver nanowires, etc., are not limited here.
  • the capacitive sensor is arranged on the color film substrate, on the one hand, the distance of the sensing capacitance is reduced, and the resolution of the capacitive sensor in the screen is increased, which can realize in-plane sensing (In cell) Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.
  • In cell in-plane sensing
  • Step S2 coating the black matrix layer 12, and forming a pattern of the black matrix layer 12 after etching;
  • FIG. 4 shows a schematic diagram of the structure of the color filter substrate in step S2 of the manufacturing method provided in this embodiment.
  • Step S3 deposit an insulating layer 13, and provide first openings 131 on the insulating layer 13 and the black matrix layer 12;
  • FIG. 5 shows a schematic diagram of the structure of the color film substrate in step S3 of the manufacturing method provided in this embodiment.
  • the insulating layer 13 can be made of silicon oxide or silicon nitride, etc., which can be determined as needed, and is not limited herein.
  • Step S4 deposit the source and drain layer 14, and form the pattern of the source and drain layer 14 after etching;
  • FIG. 6 is a schematic diagram of the structure of the color film substrate in step S4 of the manufacturing method provided by this embodiment.
  • the source and drain electrodes 14 can be made of molybdenum metal, aluminum metal, or copper metal, etc., which can be determined as needed, which is not limited herein.
  • Step S5 deposit the active layer 15, the gate insulating layer 16, and the gate layer 17 in sequence;
  • FIG. 7 shows a schematic diagram of the structure of the color film substrate in step S5 of the manufacturing method provided in this embodiment.
  • the active layer 15 can be made of oxide semiconductor, amorphous silicon, polysilicon, or organic semiconductor, etc., which can be determined as needed, and is not limited herein.
  • Step S6 the gate layer 17 is etched to form 7 the gate layer 17 pattern, and the gate insulating layer 16 and the active layer 15 are etched by a self-aligned process to form the gate insulating layer 16 pattern and the active layer 15 pattern;
  • FIG. 8 is a schematic diagram of the structure of the color film substrate in step S6 of the manufacturing method provided in this embodiment.
  • Step S7 sequentially coating the organic layer 18, the OC layer 19 and the common electrode layer 110;
  • FIG. 9 shows a schematic diagram of the structure of the color film substrate in step S7 of the preparation method provided in this embodiment.
  • coating the OC layer 19 can reduce the capacitance between the gate layer 17 and the common electrode layer 110, and can further flatten the terrain.
  • the common electrode layer 110 may specifically be indium tin oxide (ITO, Indium Tin Oxides) or indium zinc oxide (IZO, Idium Zinc Oxides) or indium gallium zinc oxide (IGZO, Indium Gallium Zinc Oxides) or aluminum doped zinc oxide or silver nanowires, etc., are not limited here.
  • ITO Indium Tin Oxides
  • IZO indium zinc oxide
  • IGZO indium gallium Zinc Oxides
  • aluminum doped zinc oxide or silver nanowires, etc. are not limited here.
  • the beneficial effect of this embodiment is to provide a method for preparing a color filter substrate.
  • the capacitive sensor is arranged on the color filter substrate.
  • the sensing capacitance distance is reduced, the resolution of the capacitive sensor in the screen is increased, and the display surface can be sensed.
  • Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Human Computer Interaction (AREA)
  • General Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Multimedia (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Image Input (AREA)

Abstract

L'invention concerne un substrat de film coloré et son procédé de fabrication. Le substrat de film coloré comprend une couche de substrat (100), la couche de substrat (100) étant pourvue d'un TFT de commutation (2) et d'un TFT de détection (1), la couche de substrat (100) étant en outre pourvue d'une couche d'électrode de détection de capacité (11) qui agit comme un capteur de capacité propre et qui est connecté à une électrode de source/drain (14) du TFT de détection (1) pour avoir la fonction d'amplification de signal, et le TFT de commutation (2) commande la mise en marche et l'arrêt du capteur de capacité propre. Au moyen de la fourniture du capteur de capacité sur le substrat de film coloré, la distance de détection de capacité est réduite, la résolution de capteur de capacité dans l'écran est augmentée, la reconnaissance d'empreintes digitales par détection dans le plan (dans la cellule) et la détection de commande tactile peuvent être réalisées, le coût du dispositif et l'épaisseur sont réduits, et la compétitivité du produit est améliorée; en outre, l'influence d'un facteur d'épaisseur de boîte sur un champ électrique est évitée, un capteur de capacité ayant une résolution plus élevée peut être conçu, et une reconnaissance d'empreintes digitales plein écran est réalisée.
PCT/CN2019/112238 2019-05-17 2019-10-21 Substrat de film coloré et son procédé de préparation WO2020232962A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910411686.6A CN110187800A (zh) 2019-05-17 2019-05-17 一种彩膜基板及其制备方法
CN201910411686.6 2019-05-17

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Publication number Priority date Publication date Assignee Title
CN110187800A (zh) * 2019-05-17 2019-08-30 深圳市华星光电半导体显示技术有限公司 一种彩膜基板及其制备方法
CN111258107B (zh) * 2020-03-03 2021-11-26 京东方科技集团股份有限公司 显示装置
CN113433730A (zh) * 2021-06-24 2021-09-24 深圳市华星光电半导体显示技术有限公司 液晶显示面板及显示装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933910B2 (en) * 2000-12-07 2005-08-23 International Business Machines Corporation Image display device and method thereof
CN106020581A (zh) * 2016-05-25 2016-10-12 厦门天马微电子有限公司 阵列基板及触控显示面板
CN108572474A (zh) * 2018-05-24 2018-09-25 武汉华星光电半导体显示技术有限公司 触控显示面板及其制作方法
CN110187800A (zh) * 2019-05-17 2019-08-30 深圳市华星光电半导体显示技术有限公司 一种彩膜基板及其制备方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101727108B1 (ko) * 2014-12-31 2017-04-17 엘지디스플레이 주식회사 인셀 터치 액정 디스플레이 장치와 이의 제조방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933910B2 (en) * 2000-12-07 2005-08-23 International Business Machines Corporation Image display device and method thereof
CN106020581A (zh) * 2016-05-25 2016-10-12 厦门天马微电子有限公司 阵列基板及触控显示面板
CN108572474A (zh) * 2018-05-24 2018-09-25 武汉华星光电半导体显示技术有限公司 触控显示面板及其制作方法
CN110187800A (zh) * 2019-05-17 2019-08-30 深圳市华星光电半导体显示技术有限公司 一种彩膜基板及其制备方法

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