WO2020232962A1 - Color film substrate and preparation method therefor - Google Patents

Color film substrate and preparation method therefor Download PDF

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Publication number
WO2020232962A1
WO2020232962A1 PCT/CN2019/112238 CN2019112238W WO2020232962A1 WO 2020232962 A1 WO2020232962 A1 WO 2020232962A1 CN 2019112238 W CN2019112238 W CN 2019112238W WO 2020232962 A1 WO2020232962 A1 WO 2020232962A1
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Prior art keywords
layer
tft
black matrix
substrate
sensing
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PCT/CN2019/112238
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French (fr)
Chinese (zh)
Inventor
刘念
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2020232962A1 publication Critical patent/WO2020232962A1/en

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors

Definitions

  • the invention relates to the technical field of display panels, in particular to a color film substrate and a preparation method thereof.
  • the display device can complete in cell fingerprint recognition, touch sensing, etc., reducing the cost and thickness of the device, and improving product competitiveness.
  • An object of the present invention is to provide a color filter substrate, which can solve the problem of thicker display panel thickness caused by the capacitive sensor fabricated on the outer substrate of the box in the prior art.
  • the present invention provides a color filter substrate, which includes a substrate layer on which a switching TFT and a sensing TFT are provided, and a capacitance sensing electrode layer is also provided on the substrate layer as a self-capacitance sensor, It is connected with the source and drain of the sensing TFT to amplify the signal; the switching TFT controls the switching of the self-capacitance sensor.
  • the sensing TFT includes one of a top gate structure TFT or a bottom gate structure TFT.
  • the switching TFT includes one of a top gate structure TFT or a bottom gate structure TFT.
  • the material used for the capacitance sensing electrode layer includes one of indium zinc oxide, indium gallium zinc oxide, indium tin oxide, or aluminum doped zinc oxide or silver nanowires.
  • a black matrix layer is provided on the substrate layer, and the sensing TFT and the switching TFT are provided on the black matrix layer.
  • the black matrix layer is disposed on one side of the capacitive sensing electrode layer.
  • the two are arranged in the same layer, and both are arranged on the substrate layer.
  • the black matrix layer is partially disposed on the capacitance sensing electrode layer. That is, at the position where the black matrix layer and the capacitance sensing electrode layer are connected, the black matrix layer is stacked upward on the capacitance sensing electrode layer, wherein the black matrix layer is stacked on the capacitance sensing electrode layer A part of the black matrix layer may only cover a part of the capacitive sensing electrode layer downward.
  • an insulating layer is further provided on the capacitive sensing electrode layer and the black matrix layer, and the sensing TFT and the switching TFT are provided on the insulating layer.
  • an active drain layer, an active layer, a gate insulating layer, a gate layer, an organic layer, an OC layer, and a common electrode layer are sequentially arranged on the insulating layer to form The sensing TFT and the switching TFT.
  • the material used for the insulating layer includes silicon oxide or silicon nitride.
  • the material used for the source and drain layers includes molybdenum, aluminum, or copper.
  • the material used for the active layer includes oxide semiconductor, amorphous silicon, polysilicon, or organic semiconductor.
  • the material used for the common electrode layer includes one of indium zinc oxide, indium gallium zinc oxide, indium tin oxide, or aluminum doped zinc oxide or silver nanowires.
  • the material used for the substrate layer includes glass or plastic substrate or polyimide film.
  • Another object of the present invention is to provide a method for preparing the color filter substrate of the present invention, which includes the following steps:
  • Step S1 providing a substrate layer, and disposing a capacitance sensing electrode layer on the substrate layer as a self-capacitance sensor;
  • Step S2 coating a black matrix layer, and forming the black matrix layer pattern after etching
  • Step S3 deposit an insulating layer, and provide first openings on the insulating layer and the black matrix layer;
  • Step S4 deposit a source and drain layer, and form the source and drain layer pattern after etching
  • Step S5 deposit an active layer, a gate insulating layer and a gate layer in sequence
  • Step S6 The gate layer is etched to form the gate layer pattern, and the gate insulating layer and the active layer are etched using a self-aligned process to form the gate insulating layer pattern and the active layer.
  • Layer pattern
  • Step S7 coating the organic layer, the OC layer and the common electrode layer in sequence.
  • coating the OC layer can reduce the capacitance between the gate layer and the common electrode, and further can flatten the terrain.
  • the present invention provides a color filter substrate and a preparation method thereof.
  • the capacitive sensor By arranging the capacitive sensor on the color filter substrate, on the one hand, the distance of the sensing capacitance is reduced and the capacitive sensor in the screen is increased. Resolution, can realize the display surface induction (In cell) Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.
  • In cell In cell
  • FIG. 1 is a schematic diagram of the structure of a color filter substrate provided by Embodiment 1 of the present invention.
  • FIG. 2 is a flowchart of a method for preparing a color filter substrate provided in Embodiment 2 of the present invention
  • step S1 of the preparation method provided in the embodiment 2 of the present invention is a schematic diagram of the structure of the color filter substrate in step S1 of the preparation method provided in the embodiment 2 of the present invention
  • step S2 is a schematic diagram of the structure of the color filter substrate in step S2 of the preparation method provided by the embodiment 2 of the present invention.
  • step S3 of the preparation method provided in the embodiment 2 of the present invention is a schematic diagram of the structure of the color film substrate in step S3 of the preparation method provided in the embodiment 2 of the present invention.
  • FIG. 6 is a schematic diagram of the structure of the color filter substrate at step S4 in the preparation method provided by the embodiment 2 of the present invention.
  • FIG. 7 is a schematic diagram of the structure of the color filter substrate in step S5 of the preparation method provided in the embodiment 2 of the present invention.
  • step S6 of the preparation method provided in the embodiment 2 of the present invention is a schematic diagram of the structure of the color filter substrate in step S6 of the preparation method provided in the embodiment 2 of the present invention.
  • FIG. 9 is a schematic diagram of the structure of the color filter substrate in step S7 of the preparation method provided in Embodiment 2 of the present invention.
  • FIG. 1 shows a schematic diagram of the structure of the thin color filter substrate provided by this embodiment, including a substrate layer 100, a capacitive sensing electrode layer 11, and a black matrix layer arranged in sequence. 12. Insulation layer 13.
  • the color film substrate also includes a sensing TFT1 and a switching TFT2 composed of a source and drain layer 14, an active layer 15, a gate insulating layer 16, a gate layer 17, an organic layer 18, an OC layer 19, and a common electrode layer 110 arranged in sequence. .
  • the black matrix layer 12 is arranged on one side of the capacitive sensing electrode layer 11. In other words, the two are arranged in the same layer, and both are arranged on the substrate layer 100. At the position where the black matrix layer 12 and the capacitive sensing electrode layer 11 are connected, the black matrix layer 12 is stacked upward on the capacitive sensing electrode layer 11, and part of the black matrix layer 12 stacked on the capacitive sensing electrode layer 11 is only downward. Cover part of the capacitive sensing electrode layer 11.
  • the insulating layer 13 is arranged on the capacitive sensing electrode layer 11 and the black matrix layer 12, the source and drain layer 14 is arranged on the insulating layer 13, the active layer 15 is arranged on the source and drain layer 14, and the gate insulating layer 16 is arranged on the On the source layer 15, the gate layer 17 is arranged on the gate insulating layer 16, the organic layer 18 is arranged on the gate layer 17, the OC layer 19 is arranged on the organic layer 18, and the common electrode layer 110 is arranged on the OC layer 19.
  • the insulating layer 13 and the black matrix layer 12 are provided with a first via hole 131, and the source and drain layer 14 is filled in the first via hole 131.
  • the capacitance sensing electrode layer 11 serves as a self-capacitance sensor, which is connected to the source and drain of the sensing TFT1 and can function to amplify signals.
  • the switching TFT2 can control the switching of the capacitance sensing electrode layer 11 as a self-capacitance sensor.
  • the capacitive sensing electrode layer 11 may specifically be indium tin oxide (ITO, Indium Tin Oxides) or indium zinc oxide (IZO, Idium Zinc Oxides) or indium gallium zinc oxide (IGZO, Indium Gallium Zinc Oxides) or aluminum doped zinc oxide or silver nanowires, etc., are not limited here.
  • the active layer 15 can be made of oxide semiconductor, amorphous silicon, polysilicon, or organic semiconductor, etc., which is not limited herein.
  • both the sensing TFT and the switching TFT adopt a top-gate structure TFT.
  • the sensing TFT and the switching TFT are not limited to a TFT adopting a top-gate structure, and may also adopt a bottom-gate structure TFT.
  • the capacitive sensing electrode layer 11 on the color filter substrate, on the one hand, the distance of the sensing capacitor is reduced, and the resolution of the capacitive sensor in the screen is increased, so that in-plane sensing (In cell) Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.
  • In cell in-plane sensing
  • FIG. 2 shows a flowchart of the method for preparing the color filter substrate provided by this embodiment, including the following steps:
  • Step S1 Provide a substrate layer 100, and fabricate a capacitive sensing electrode layer 11 on the substrate layer 100 as a self-capacitance sensor;
  • FIG. 3 shows a schematic diagram of the structure of the color filter substrate in step S1 of the manufacturing method provided by this embodiment.
  • the substrate Zeeberg 100 can be made of glass or plastic substrate or polyimide film, etc., which is not limited herein.
  • the capacitive sensing electrode layer 11 may specifically be indium tin oxide (ITO, Indium Tin Oxides) or indium zinc oxide (IZO, Idium Zinc Oxides) or indium gallium zinc oxide (IGZO, Indium Gallium Zinc Oxides) or aluminum doped zinc oxide or silver nanowires, etc., are not limited here.
  • the capacitive sensor is arranged on the color film substrate, on the one hand, the distance of the sensing capacitance is reduced, and the resolution of the capacitive sensor in the screen is increased, which can realize in-plane sensing (In cell) Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.
  • In cell in-plane sensing
  • Step S2 coating the black matrix layer 12, and forming a pattern of the black matrix layer 12 after etching;
  • FIG. 4 shows a schematic diagram of the structure of the color filter substrate in step S2 of the manufacturing method provided in this embodiment.
  • Step S3 deposit an insulating layer 13, and provide first openings 131 on the insulating layer 13 and the black matrix layer 12;
  • FIG. 5 shows a schematic diagram of the structure of the color film substrate in step S3 of the manufacturing method provided in this embodiment.
  • the insulating layer 13 can be made of silicon oxide or silicon nitride, etc., which can be determined as needed, and is not limited herein.
  • Step S4 deposit the source and drain layer 14, and form the pattern of the source and drain layer 14 after etching;
  • FIG. 6 is a schematic diagram of the structure of the color film substrate in step S4 of the manufacturing method provided by this embodiment.
  • the source and drain electrodes 14 can be made of molybdenum metal, aluminum metal, or copper metal, etc., which can be determined as needed, which is not limited herein.
  • Step S5 deposit the active layer 15, the gate insulating layer 16, and the gate layer 17 in sequence;
  • FIG. 7 shows a schematic diagram of the structure of the color film substrate in step S5 of the manufacturing method provided in this embodiment.
  • the active layer 15 can be made of oxide semiconductor, amorphous silicon, polysilicon, or organic semiconductor, etc., which can be determined as needed, and is not limited herein.
  • Step S6 the gate layer 17 is etched to form 7 the gate layer 17 pattern, and the gate insulating layer 16 and the active layer 15 are etched by a self-aligned process to form the gate insulating layer 16 pattern and the active layer 15 pattern;
  • FIG. 8 is a schematic diagram of the structure of the color film substrate in step S6 of the manufacturing method provided in this embodiment.
  • Step S7 sequentially coating the organic layer 18, the OC layer 19 and the common electrode layer 110;
  • FIG. 9 shows a schematic diagram of the structure of the color film substrate in step S7 of the preparation method provided in this embodiment.
  • coating the OC layer 19 can reduce the capacitance between the gate layer 17 and the common electrode layer 110, and can further flatten the terrain.
  • the common electrode layer 110 may specifically be indium tin oxide (ITO, Indium Tin Oxides) or indium zinc oxide (IZO, Idium Zinc Oxides) or indium gallium zinc oxide (IGZO, Indium Gallium Zinc Oxides) or aluminum doped zinc oxide or silver nanowires, etc., are not limited here.
  • ITO Indium Tin Oxides
  • IZO indium zinc oxide
  • IGZO indium gallium Zinc Oxides
  • aluminum doped zinc oxide or silver nanowires, etc. are not limited here.
  • the beneficial effect of this embodiment is to provide a method for preparing a color filter substrate.
  • the capacitive sensor is arranged on the color filter substrate.
  • the sensing capacitance distance is reduced, the resolution of the capacitive sensor in the screen is increased, and the display surface can be sensed.
  • Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.

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Abstract

A color film substrate and a preparation method therefor. The color film substrate comprises a substrate layer (100), wherein the substrate layer (100) is provided with a switch TFT (2) and a sensing TFT (1), the substrate layer (100) is further provided with a capacitance sensing electrode layer (11) which acts as a self-capacitance sensor and is connected to a source/drain electrode (14) of the sensing TFT (1) to have the function of signal amplification, and the switch TFT (2) controls the turning-on and turning-off of the self-capacitance sensor. By means of providing the capacitance sensor on the color film substrate, the capacitance sensing distance is reduced, the in-screen capacitance sensor resolution is increased, in-plane sensing (in-cell) fingerprint recognition and touch-control sensing can be realized, device cost and thickness are reduced, and product competitiveness is improved; moreover, the influence of a box thickness factor on an electric field is avoided, a capacitance sensor with a higher resolution can be designed, and full-screen fingerprint recognition is realized.

Description

一种彩膜基板及其制备方法Color film substrate and preparation method thereof 技术领域Technical field
本发明涉及显示面板技术领域，特别涉及一种彩膜基板及其制备方法。The invention relates to the technical field of display panels, in particular to a color film substrate and a preparation method thereof.
背景技术Background technique
目前已知的手机及平板触控、指纹识别，通常传感器都是独立安装显示基板以外的位置，无法做到在显示基板上定点感应。电容传感器因其电场受到基板厚度及盒厚的影响，需要制作较大的感应距离以接收人体电场信号，因此一般制作在盒外基板上再进行组装。Currently known mobile phones and tablet touch, fingerprint recognition, usually sensors are independently installed at positions other than the display substrate, and cannot achieve fixed-point sensing on the display substrate. Since the electric field of the capacitive sensor is affected by the thickness of the substrate and the thickness of the box, a larger sensing distance is required to receive the electric field signal of the human body. Therefore, it is generally fabricated on the substrate outside the box and then assembled.
若在显示基板上制作像素级别的传感器，显示设备即可完成In cell指纹识别，触控感应等，减少了设备成本及厚度，提高产品竞争力。If pixel-level sensors are fabricated on the display substrate, the display device can complete in cell fingerprint recognition, touch sensing, etc., reducing the cost and thickness of the device, and improving product competitiveness.
因此，确有必要来开发一种新型的彩膜基板，以克服现有技术的缺陷。Therefore, it is indeed necessary to develop a new type of color filter substrate to overcome the defects of the prior art.
技术问题technical problem
本发明的一个目的是提供一种彩膜基板，其能够解决现有技术中电容传感器制作在盒外基板上导致的显示面板厚度较厚的问题。An object of the present invention is to provide a color filter substrate, which can solve the problem of thicker display panel thickness caused by the capacitive sensor fabricated on the outer substrate of the box in the prior art.
技术解决方案Technical solutions
为实现上述目的，本发明提供一种彩膜基板，其包括基板层，所述基板层上设置有一开关TFT和一个感应TFT,所述基板层上还设置有一电容感应电极层作为自电容传感器，其与所述感应TFT的源漏极连接，起到放大信号的功能；所述开关TFT控制所述自电容传感器的开关。In order to achieve the above objective, the present invention provides a color filter substrate, which includes a substrate layer on which a switching TFT and a sensing TFT are provided, and a capacitance sensing electrode layer is also provided on the substrate layer as a self-capacitance sensor, It is connected with the source and drain of the sensing TFT to amplify the signal; the switching TFT controls the switching of the self-capacitance sensor.
进一步的，在其他实施方式中，其中所述感应TFT包括顶栅结构TFT或底栅结构TFT中的一种。Further, in other embodiments, the sensing TFT includes one of a top gate structure TFT or a bottom gate structure TFT.
进一步的，在其他实施方式中，其中所述开关TFT包括顶栅结构TFT或底栅结构TFT中的一种。Further, in other embodiments, the switching TFT includes one of a top gate structure TFT or a bottom gate structure TFT.
进一步的，在其他实施方式中，其中所述电容感应电极层采用的材料包括氧化铟锌或氧化铟镓锌或氧化铟锡或铝参杂的氧化锌或银纳米线中的一种。Further, in other embodiments, the material used for the capacitance sensing electrode layer includes one of indium zinc oxide, indium gallium zinc oxide, indium tin oxide, or aluminum doped zinc oxide or silver nanowires.
进一步的，在其他实施方式中，其中所述基板层上设置有黑色矩阵层，所述感应TFT和所述开关TFT设置在所述黑色矩阵层上。Further, in other embodiments, a black matrix layer is provided on the substrate layer, and the sensing TFT and the switching TFT are provided on the black matrix layer.
进一步的，在其他实施方式中，其中所述黑色矩阵层是设置在所述电容感应电极层的一侧。也就是说，两者为同层设置，均设置在所述基板层上。Further, in other embodiments, the black matrix layer is disposed on one side of the capacitive sensing electrode layer. In other words, the two are arranged in the same layer, and both are arranged on the substrate layer.
进一步的，在其他实施方式中，其中所述黑色矩阵层是部分设置于所述电容感应电极层上。也就是说，所述黑色矩阵层与所述电容感应电极层相接的位置处，所述黑色矩阵层向上叠置在所述电容感应电极层上，其中叠置在所述电容感应电极层上的部分所述黑色矩阵层可以只是向下覆盖部分所述电容感应电极层。Further, in other embodiments, the black matrix layer is partially disposed on the capacitance sensing electrode layer. That is, at the position where the black matrix layer and the capacitance sensing electrode layer are connected, the black matrix layer is stacked upward on the capacitance sensing electrode layer, wherein the black matrix layer is stacked on the capacitance sensing electrode layer A part of the black matrix layer may only cover a part of the capacitive sensing electrode layer downward.
进一步的，在其他实施方式中，其中所述电容感应电极层和所述黑色矩阵层上还设置有绝缘层，所述感应TFT和所述开关TFT设置在所述绝缘层上。Further, in other embodiments, an insulating layer is further provided on the capacitive sensing electrode layer and the black matrix layer, and the sensing TFT and the switching TFT are provided on the insulating layer.
进一步的，在其他实施方式中，其中所述绝缘层上依次设置有源漏极层、有源层、栅极绝缘层、栅极层、有机层、OC层和公共电极层，用于分别构成所述感应TFT和开关TFT。 Further, in other embodiments, an active drain layer, an active layer, a gate insulating layer, a gate layer, an organic layer, an OC layer, and a common electrode layer are sequentially arranged on the insulating layer to form The sensing TFT and the switching TFT.
进一步的，在其他实施方式中，其中所述绝缘层采用的材料包括氧化硅或氮化硅。Further, in other embodiments, the material used for the insulating layer includes silicon oxide or silicon nitride.
进一步的，在其他实施方式中，其中所述源漏极层采用的材料包括钼或铝或铜金属。Further, in other embodiments, the material used for the source and drain layers includes molybdenum, aluminum, or copper.
进一步的，在其他实施方式中，其中所述有源层采用的材料包括氧化物半导体或非晶硅或多晶硅或有机物半导体。Further, in other embodiments, the material used for the active layer includes oxide semiconductor, amorphous silicon, polysilicon, or organic semiconductor.
进一步的，在其他实施方式中，其中所述公共电极层采用的材料包括氧化铟锌或氧化铟镓锌或氧化铟锡或铝参杂的氧化锌或银纳米线中的一种。Further, in other embodiments, the material used for the common electrode layer includes one of indium zinc oxide, indium gallium zinc oxide, indium tin oxide, or aluminum doped zinc oxide or silver nanowires.
进一步的，在其他实施方式中，其中所述基板层采用的材料包括玻璃或塑料基板或聚酰亚胺薄膜。Further, in other embodiments, the material used for the substrate layer includes glass or plastic substrate or polyimide film.
本发明的又一目的是提供一种制备本发明涉及的所述彩膜基板的方法，包括以下步骤：Another object of the present invention is to provide a method for preparing the color filter substrate of the present invention, which includes the following steps:
步骤S1：提供一基板层，在所述基板层上设置一电容感应电极层，作为自电容传感器；Step S1: providing a substrate layer, and disposing a capacitance sensing electrode layer on the substrate layer as a self-capacitance sensor;
步骤S2：涂布黑色矩阵层，刻蚀后形成所述黑色矩阵层图案；Step S2: coating a black matrix layer, and forming the black matrix layer pattern after etching;
步骤S3：沉积绝缘层，在所述绝缘层和所述黑色矩阵层上设置第一开孔；Step S3: deposit an insulating layer, and provide first openings on the insulating layer and the black matrix layer;
步骤S4：沉积源漏极层，刻蚀后形成所述源漏极层图案；Step S4: deposit a source and drain layer, and form the source and drain layer pattern after etching;
步骤S5：依次沉积有源层、栅极绝缘层和栅极层；Step S5: deposit an active layer, a gate insulating layer and a gate layer in sequence;
步骤S6：刻蚀所述栅极层形成所述栅极层图案，利用自对准工艺刻蚀所述栅极绝缘层和所述有源层形成所述栅极绝缘层图案和所述有源层图案；Step S6: The gate layer is etched to form the gate layer pattern, and the gate insulating layer and the active layer are etched using a self-aligned process to form the gate insulating layer pattern and the active layer. Layer pattern
步骤S7：依次涂布有机层、OC层和公共电极层。Step S7: coating the organic layer, the OC layer and the common electrode layer in sequence.
其中，在所述步骤S7中，涂布所述OC层能够减小所述栅极层和所述公共电极间的电容，进一步还能够平坦化地形。Wherein, in the step S7, coating the OC layer can reduce the capacitance between the gate layer and the common electrode, and further can flatten the terrain.
有益效果Beneficial effect
相对于现有技术，本发明的有益效果在于：本发明提供一种彩膜基板及其制备方法，通过将电容传感器设置在彩膜基板上，一方面降低了感应电容距离，增加屏内电容传感器分辨率，可以实现显示面内感应（In cell）指纹识别、触控感应，减少了设备成本及厚度，提高产品竞争力；另一方面避免了盒厚因素对电场的影响，可以设计分辨率更高的电容传感器，实现全屏指纹识别。Compared with the prior art, the beneficial effects of the present invention are: the present invention provides a color filter substrate and a preparation method thereof. By arranging the capacitive sensor on the color filter substrate, on the one hand, the distance of the sensing capacitance is reduced and the capacitive sensor in the screen is increased. Resolution, can realize the display surface induction (In cell) Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.
附图说明Description of the drawings
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。In order to more clearly describe the technical solutions in the embodiments of the present invention, the following will briefly introduce the accompanying drawings used in the description of the embodiments. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.
图1为本发明实施例1提供的彩膜基板的结构示意图；1 is a schematic diagram of the structure of a color filter substrate provided by Embodiment 1 of the present invention;
图2为本发明实施例2提供的彩膜基板的制备方法的流程图；2 is a flowchart of a method for preparing a color filter substrate provided in Embodiment 2 of the present invention;
图3为本发明实施例2提供的制备方法中步骤S1时彩膜基板的结构示意图；3 is a schematic diagram of the structure of the color filter substrate in step S1 of the preparation method provided in the embodiment 2 of the present invention;
图4为本发明实施例2提供的制备方法中步骤S2时彩膜基板的结构示意图；4 is a schematic diagram of the structure of the color filter substrate in step S2 of the preparation method provided by the embodiment 2 of the present invention;
图5为本发明实施例2提供的制备方法中步骤S3时彩膜基板的结构示意图；5 is a schematic diagram of the structure of the color film substrate in step S3 of the preparation method provided in the embodiment 2 of the present invention;
图6为本发明实施例2提供的制备方法中步骤S4时彩膜基板的结构示意图；6 is a schematic diagram of the structure of the color filter substrate at step S4 in the preparation method provided by the embodiment 2 of the present invention;
图7为本发明实施例2提供的制备方法中步骤S5时彩膜基板的结构示意图；FIG. 7 is a schematic diagram of the structure of the color filter substrate in step S5 of the preparation method provided in the embodiment 2 of the present invention;
图8为本发明实施例2提供的制备方法中步骤S6时彩膜基板的结构示意图；8 is a schematic diagram of the structure of the color filter substrate in step S6 of the preparation method provided in the embodiment 2 of the present invention;
图9为本发明实施例2提供的制备方法中步骤S7时彩膜基板的结构示意图。FIG. 9 is a schematic diagram of the structure of the color filter substrate in step S7 of the preparation method provided in Embodiment 2 of the present invention.
本发明的最佳实施方式The best mode of the invention
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本发明的示例性实施例的目的。但是本发明可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。The specific structure and functional details disclosed herein are only representative, and are used for the purpose of describing exemplary embodiments of the present invention. However, the present invention can be implemented in many alternative forms, and should not be construed as being limited only to the embodiments set forth herein.
实施例1Example 1
本实施例提供一种彩膜基板，请参阅图1，图1所示为本实施例提供的薄彩膜基板的结构示意图，包括依次设置的基板层100、电容感应电极层11、黑色矩阵层12、绝缘层13。This embodiment provides a color filter substrate. Please refer to FIG. 1. FIG. 1 shows a schematic diagram of the structure of the thin color filter substrate provided by this embodiment, including a substrate layer 100, a capacitive sensing electrode layer 11, and a black matrix layer arranged in sequence. 12. Insulation layer 13.
彩膜基板还包括由依次设置的源漏极层14、有源层15、栅极绝缘层16、栅极层17、有机层18、OC层19和公共电极层110构成的感应TFT1和开关TFT2。The color film substrate also includes a sensing TFT1 and a switching TFT2 composed of a source and drain layer 14, an active layer 15, a gate insulating layer 16, a gate layer 17, an organic layer 18, an OC layer 19, and a common electrode layer 110 arranged in sequence. .
其中黑色矩阵层12是设置在电容感应电极层11的一侧。也就是说，两者为同层设置，均设置在基板层100上。黑色矩阵层12与电容感应电极层11相接的位置处，黑色矩阵层12向上叠置在电容感应电极层11上，其中叠置在电容感应电极层11上的部分黑色矩阵层12只是向下覆盖部分电容感应电极层11。The black matrix layer 12 is arranged on one side of the capacitive sensing electrode layer 11. In other words, the two are arranged in the same layer, and both are arranged on the substrate layer 100. At the position where the black matrix layer 12 and the capacitive sensing electrode layer 11 are connected, the black matrix layer 12 is stacked upward on the capacitive sensing electrode layer 11, and part of the black matrix layer 12 stacked on the capacitive sensing electrode layer 11 is only downward. Cover part of the capacitive sensing electrode layer 11.
绝缘层13设置于电容感应电极层11和黑色矩阵层12上，源漏极层14设置于绝缘层13上，有源层15设置于源漏极层14上，栅极绝缘层16设置于有源层15上，栅极层17设置于栅极绝缘层16上，有机层18设置于栅极层17上，OC层19设置于有机层18上，公共电极层110设置于OC层19上，绝缘层13和黑色矩阵层12上设置有第一过孔131，源漏极层14填充于第一过孔131内。The insulating layer 13 is arranged on the capacitive sensing electrode layer 11 and the black matrix layer 12, the source and drain layer 14 is arranged on the insulating layer 13, the active layer 15 is arranged on the source and drain layer 14, and the gate insulating layer 16 is arranged on the On the source layer 15, the gate layer 17 is arranged on the gate insulating layer 16, the organic layer 18 is arranged on the gate layer 17, the OC layer 19 is arranged on the organic layer 18, and the common electrode layer 110 is arranged on the OC layer 19. The insulating layer 13 and the black matrix layer 12 are provided with a first via hole 131, and the source and drain layer 14 is filled in the first via hole 131.
其中电容感应电极层11作为自电容传感器，其与感应TFT1的源漏极连接，能够起到放大信号的功能，开关TFT2能够控制作为自电容传感器的电容感应电极层11的开关。The capacitance sensing electrode layer 11 serves as a self-capacitance sensor, which is connected to the source and drain of the sensing TFT1 and can function to amplify signals. The switching TFT2 can control the switching of the capacitance sensing electrode layer 11 as a self-capacitance sensor.
在具体实施时，电容感应电极层11具体可以采用氧化铟锡 (ITO,Indium Tin  Oxides)或氧化铟锌(IZO,Idium Zinc Oxides)或氧化铟镓锌(IGZO,Indium Gallium Zinc Oxides)或铝参杂的氧化锌或银纳米线等制作，在此不做限定。In specific implementation, the capacitive sensing electrode layer 11 may specifically be indium tin oxide (ITO, Indium Tin Oxides) or indium zinc oxide (IZO, Idium Zinc Oxides) or indium gallium zinc oxide (IGZO, Indium Gallium Zinc Oxides) or aluminum doped zinc oxide or silver nanowires, etc., are not limited here.
在具体实施时，有源层15可以采用氧化物半导体或非晶硅或多晶硅或有机物半导体等制作，在此不做限定。In specific implementation, the active layer 15 can be made of oxide semiconductor, amorphous silicon, polysilicon, or organic semiconductor, etc., which is not limited herein.
在本实施例中，感应TFT和开关TFT均采用顶栅结构的TFT，在其他实施方式中，感应TFT和开关TFT不限于采用顶栅结构的TFT，也可以采用底栅结构的TFT。In this embodiment, both the sensing TFT and the switching TFT adopt a top-gate structure TFT. In other embodiments, the sensing TFT and the switching TFT are not limited to a TFT adopting a top-gate structure, and may also adopt a bottom-gate structure TFT.
在本实施例中，通过将电容感应电极层11设置在彩膜基板上，一方面降低了感应电容距离，增加屏内电容传感器分辨率，可以实现显示面内感应（In cell）指纹识别、触控感应，减少了设备成本及厚度，提高产品竞争力；另一方面避免了盒厚因素对电场的影响，可以设计分辨率更高的电容传感器，实现全屏指纹识别。In this embodiment, by disposing the capacitive sensing electrode layer 11 on the color filter substrate, on the one hand, the distance of the sensing capacitor is reduced, and the resolution of the capacitive sensor in the screen is increased, so that in-plane sensing (In cell) Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.
实施例2Example 2
本实施例提供一种制备实施例1涉及的所述彩膜基板的方法，请参阅图2，图2所示为本实施例提供的彩膜基板的制备方法的流程图，包括以下步骤：This embodiment provides a method for preparing the color filter substrate involved in Example 1. Please refer to FIG. 2. FIG. 2 shows a flowchart of the method for preparing the color filter substrate provided by this embodiment, including the following steps:
步骤S1：提供一基板层100，在基板层100上制作电容感应电极层11，作为自电容传感器；Step S1: Provide a substrate layer 100, and fabricate a capacitive sensing electrode layer 11 on the substrate layer 100 as a self-capacitance sensor;
请参阅图3，图3所示为本实施例提供的制备方法中步骤S1时彩膜基板的结构示意图。Please refer to FIG. 3. FIG. 3 shows a schematic diagram of the structure of the color filter substrate in step S1 of the manufacturing method provided by this embodiment.
在具体实施时，基板策伯格100可以采用玻璃或塑料基板或聚酰亚胺薄膜等制作，在此不做限定。In specific implementation, the substrate Zeeberg 100 can be made of glass or plastic substrate or polyimide film, etc., which is not limited herein.
在本实施例中，电容感应电极层11具体可以采用氧化铟锡 (ITO,Indium Tin  Oxides)或氧化铟锌(IZO,Idium Zinc Oxides)或氧化铟镓锌(IGZO,Indium Gallium Zinc Oxides)或铝参杂的氧化锌或银纳米线等制作，在此不做限定。In this embodiment, the capacitive sensing electrode layer 11 may specifically be indium tin oxide (ITO, Indium Tin Oxides) or indium zinc oxide (IZO, Idium Zinc Oxides) or indium gallium zinc oxide (IGZO, Indium Gallium Zinc Oxides) or aluminum doped zinc oxide or silver nanowires, etc., are not limited here.
将电容传感器设置在彩膜基板上，一方面降低了感应电容距离，增加屏内电容传感器分辨率，可以实现显示面内感应（In cell）指纹识别、触控感应，减少了设备成本及厚度，提高产品竞争力；另一方面避免了盒厚因素对电场的影响，可以设计分辨率更高的电容传感器，实现全屏指纹识别。The capacitive sensor is arranged on the color film substrate, on the one hand, the distance of the sensing capacitance is reduced, and the resolution of the capacitive sensor in the screen is increased, which can realize in-plane sensing (In cell) Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.
步骤S2：涂布黑色矩阵层12，刻蚀后形成黑色矩阵层12图案；Step S2: coating the black matrix layer 12, and forming a pattern of the black matrix layer 12 after etching;
请参阅图4，图4所示为本实施例提供的制备方法中步骤S2时彩膜基板的结构示意图。Please refer to FIG. 4. FIG. 4 shows a schematic diagram of the structure of the color filter substrate in step S2 of the manufacturing method provided in this embodiment.
步骤S3：沉积绝缘层13，在绝缘层13和黑色矩阵层12上设置第一开孔131；Step S3: deposit an insulating layer 13, and provide first openings 131 on the insulating layer 13 and the black matrix layer 12;
请参阅图5，图5所示为本实施例提供的制备方法中步骤S3时彩膜基板的结构示意图。Please refer to FIG. 5. FIG. 5 shows a schematic diagram of the structure of the color film substrate in step S3 of the manufacturing method provided in this embodiment.
在具体实施时，绝缘层13可以采用氧化硅或氮化硅等制作，可随需要而定，在此不做限定。In specific implementation, the insulating layer 13 can be made of silicon oxide or silicon nitride, etc., which can be determined as needed, and is not limited herein.
步骤S4：沉积源漏极层14，刻蚀后形成源漏极层14图案；Step S4: deposit the source and drain layer 14, and form the pattern of the source and drain layer 14 after etching;
请参阅图6，图6所示为本实施例提供的制备方法中步骤S4时彩膜基板的结构示意图。Please refer to FIG. 6. FIG. 6 is a schematic diagram of the structure of the color film substrate in step S4 of the manufacturing method provided by this embodiment.
在具体实施时，源漏极14可以采用钼金属或铝金属或铜金属等制作，可随需要而定，在此不做限定。In a specific implementation, the source and drain electrodes 14 can be made of molybdenum metal, aluminum metal, or copper metal, etc., which can be determined as needed, which is not limited herein.
步骤S5：依次沉积有源层15、栅极绝缘层16和栅极层17；Step S5: deposit the active layer 15, the gate insulating layer 16, and the gate layer 17 in sequence;
请参阅图7，图7所示为本实施例提供的制备方法中步骤S5时彩膜基板的结构示意图。Please refer to FIG. 7. FIG. 7 shows a schematic diagram of the structure of the color film substrate in step S5 of the manufacturing method provided in this embodiment.
在具体实施时，有源层15可以采用氧化物半导体或非晶硅或多晶硅或有机物半导体等制作，可随需要而定，在此不做限定。In specific implementation, the active layer 15 can be made of oxide semiconductor, amorphous silicon, polysilicon, or organic semiconductor, etc., which can be determined as needed, and is not limited herein.
步骤S6：刻蚀栅极层17形成7栅极层17图案，利用自对准工艺刻蚀栅极绝缘层16和有源层15形成栅极绝缘层16图案和有源层15图案；Step S6: the gate layer 17 is etched to form 7 the gate layer 17 pattern, and the gate insulating layer 16 and the active layer 15 are etched by a self-aligned process to form the gate insulating layer 16 pattern and the active layer 15 pattern;
请参阅图8，图8所示为本实施例提供的制备方法中步骤S6时彩膜基板的结构示意图。Please refer to FIG. 8. FIG. 8 is a schematic diagram of the structure of the color film substrate in step S6 of the manufacturing method provided in this embodiment.
步骤S7：依次涂布有机层18、OC层19和公共电极层110；Step S7: sequentially coating the organic layer 18, the OC layer 19 and the common electrode layer 110;
请参阅图9，图9所示为本实施例提供的制备方法中步骤S7时彩膜基板的结构示意图。Please refer to FIG. 9. FIG. 9 shows a schematic diagram of the structure of the color film substrate in step S7 of the preparation method provided in this embodiment.
其中，涂布OC层19能够减小栅极层17和公共电极层110间的电容，进一步还能够平坦化地形。Wherein, coating the OC layer 19 can reduce the capacitance between the gate layer 17 and the common electrode layer 110, and can further flatten the terrain.
在具体实施时，公共电极层110具体可以采用氧化铟锡 (ITO,Indium Tin  Oxides)或氧化铟锌(IZO,Idium Zinc Oxides)或氧化铟镓锌(IGZO,Indium Gallium Zinc Oxides)或铝参杂的氧化锌或银纳米线等制作，在此不做限定。In specific implementation, the common electrode layer 110 may specifically be indium tin oxide (ITO, Indium Tin Oxides) or indium zinc oxide (IZO, Idium Zinc Oxides) or indium gallium zinc oxide (IGZO, Indium Gallium Zinc Oxides) or aluminum doped zinc oxide or silver nanowires, etc., are not limited here.
本实施例的有益效果在于：提供一种彩膜基板的制备方法，将电容传感器设置在彩膜基板上，一方面降低了感应电容距离，增加屏内电容传感器分辨率，可以实现显示面内感应（In cell）指纹识别、触控感应，减少了设备成本及厚度，提高产品竞争力；另一方面避免了盒厚因素对电场的影响，可以设计分辨率更高的电容传感器，实现全屏指纹识别。The beneficial effect of this embodiment is to provide a method for preparing a color filter substrate. The capacitive sensor is arranged on the color filter substrate. On the one hand, the sensing capacitance distance is reduced, the resolution of the capacitive sensor in the screen is increased, and the display surface can be sensed. (In cell) Fingerprint recognition and touch sensing reduce the cost and thickness of the equipment and improve product competitiveness; on the other hand, it avoids the influence of the thickness of the cell on the electric field, and can design a capacitive sensor with higher resolution to realize full-screen fingerprint recognition.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above are only the preferred embodiments of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications should also be considered This is the protection scope of the present invention.

Claims (10)

  1. 一种彩膜基板，其包括基板层，其中，所述基板层上设置有一开关TFT和一个感应TFT,所述基板层上还设置有一电容感应电极层作为自电容传感器，其与所述感应TFT的源漏极连接，起到放大信号的功能；所述开关TFT控制所述自电容传感器的开关。A color film substrate, which includes a substrate layer, wherein a switching TFT and a sensing TFT are arranged on the substrate layer, and a capacitance sensing electrode layer as a self-capacitance sensor is also arranged on the substrate layer, which is connected to the sensing TFT The source-drain connection of the sensor has the function of amplifying the signal; the switch TFT controls the switch of the self-capacitance sensor.
  2. 根据权利要求1所述的彩膜基板，其中，所述感应TFT包括顶栅结构TFT或底栅结构TFT中的一种。3. The color filter substrate of claim 1, wherein the sensing TFT comprises one of a top-gate structure TFT or a bottom-gate structure TFT.
  3. 根据权利要求1所述的彩膜基板，其中，所述开关TFT包括顶栅结构TFT或底栅结构TFT中的一种。4. The color filter substrate of claim 1, wherein the switching TFT comprises one of a top gate structure TFT or a bottom gate structure TFT.
  4. 根据权利要求1所述的彩膜基板，其中，所述电容感应电极层采用的材料包括氧化铟锌或氧化铟镓锌或氧化铟锡或铝参杂的氧化锌或银纳米线中的一种。The color film substrate of claim 1, wherein the material used for the capacitance sensing electrode layer includes one of indium zinc oxide, indium gallium zinc oxide, indium tin oxide, or aluminum doped zinc oxide or silver nanowires .
  5. 根据权利要求1所述的彩膜基板，其中，所述基板层上设置有黑色矩阵层，所述感应TFT和所述开关TFT设置在所述黑色矩阵层上。3. The color filter substrate of claim 1, wherein a black matrix layer is provided on the substrate layer, and the sensing TFT and the switching TFT are provided on the black matrix layer.
  6. 根据权利要求5所述的彩膜基板，其中，所述黑色矩阵层是设置在所述电容感应电极层的一侧，两者为同层设置，均设置在所述基板层上。5. The color filter substrate according to claim 5, wherein the black matrix layer is arranged on one side of the capacitive sensing electrode layer, and both are arranged in the same layer, and both are arranged on the substrate layer.
  7. 根据权利要求6所述的彩膜基板，其中，所述黑色矩阵层是部分设置于所述电容感应电极层上，所述黑色矩阵层与所述电容感应电极层相接的位置处，所述黑色矩阵层向上叠置在所述电容感应电极层上，其中叠置在所述电容感应电极层上的部分所述黑色矩阵层向下覆盖部分所述电容感应电极层。7. The color filter substrate of claim 6, wherein the black matrix layer is partially disposed on the capacitance sensing electrode layer, and at a position where the black matrix layer and the capacitance sensing electrode layer are connected, the A black matrix layer is stacked upward on the capacitive sensing electrode layer, and a part of the black matrix layer stacked on the capacitive sensing electrode layer covers a part of the capacitive sensing electrode layer downward.
  8. 根据权利要求6所述的彩膜基板，其中，所述电容感应电极层和所述黑色矩阵层上还设置有绝缘层，所述感应TFT和所述开关TFT设置在所述绝缘层上。7. The color filter substrate according to claim 6, wherein an insulating layer is further provided on the capacitive sensing electrode layer and the black matrix layer, and the sensing TFT and the switching TFT are provided on the insulating layer.
  9. 根据权利要求8所述的彩膜基板，其中，所述绝缘层上依次设置有源漏极层、有源层、栅极绝缘层、栅极层、有机层、OC层和公共电极层，用于分别构成所述感应TFT和开关TFT。The color filter substrate according to claim 8, wherein an active drain layer, an active layer, a gate insulating layer, a gate layer, an organic layer, an OC layer and a common electrode layer are sequentially arranged on the insulating layer. To form the sensing TFT and the switching TFT respectively.
  10. 一种制备根据权利要求9所述彩膜基板的方法，其中，包括以下步骤：A method for preparing the color filter substrate according to claim 9, which comprises the following steps:
    步骤S1：提供一基板层，在所述基板层上设置一电容感应电极层，作为自电容传感器；Step S1: providing a substrate layer, and disposing a capacitance sensing electrode layer on the substrate layer as a self-capacitance sensor;
    步骤S2：涂布黑色矩阵层，刻蚀后形成所述黑色矩阵层图案；Step S2: coating a black matrix layer, and forming the black matrix layer pattern after etching;
    步骤S3：沉积绝缘层，在所述绝缘层和所述黑色矩阵层上设置第一开孔；Step S3: deposit an insulating layer, and provide first openings on the insulating layer and the black matrix layer;
    步骤S4：沉积源漏极层，刻蚀后形成所述源漏极层图案；Step S4: deposit a source and drain layer, and form the source and drain layer pattern after etching;
    步骤S5：依次沉积有源层、栅极绝缘层和栅极层；Step S5: deposit an active layer, a gate insulating layer and a gate layer in sequence;
    步骤S6：刻蚀所述栅极层形成所述栅极层图案，利用自对准工艺刻蚀所述栅极绝缘层和所述有源层形成所述栅极绝缘层图案和所述有源层图案；Step S6: The gate layer is etched to form the gate layer pattern, and the gate insulating layer and the active layer are etched using a self-aligned process to form the gate insulating layer pattern and the active layer. Layer pattern
    步骤S7：依次涂布有机层、OC层和公共电极层。Step S7: coating the organic layer, the OC layer and the common electrode layer in sequence.
PCT/CN2019/112238 2019-05-17 2019-10-21 Color film substrate and preparation method therefor WO2020232962A1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933910B2 (en) * 2000-12-07 2005-08-23 International Business Machines Corporation Image display device and method thereof
CN106020581A (en) * 2016-05-25 2016-10-12 厦门天马微电子有限公司 Array substrate and touch display panel
CN108572474A (en) * 2018-05-24 2018-09-25 武汉华星光电半导体显示技术有限公司 Touch-control display panel and preparation method thereof
CN110187800A (en) * 2019-05-17 2019-08-30 深圳市华星光电半导体显示技术有限公司 A kind of color membrane substrates and preparation method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101727108B1 (en) * 2014-12-31 2017-04-17 엘지디스플레이 주식회사 In cell touch liquid crystal display device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933910B2 (en) * 2000-12-07 2005-08-23 International Business Machines Corporation Image display device and method thereof
CN106020581A (en) * 2016-05-25 2016-10-12 厦门天马微电子有限公司 Array substrate and touch display panel
CN108572474A (en) * 2018-05-24 2018-09-25 武汉华星光电半导体显示技术有限公司 Touch-control display panel and preparation method thereof
CN110187800A (en) * 2019-05-17 2019-08-30 深圳市华星光电半导体显示技术有限公司 A kind of color membrane substrates and preparation method thereof

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