WO2020221525A1 - Procédé de fabrication d'un matériau 2d, matériau 2d et ses applications - Google Patents

Procédé de fabrication d'un matériau 2d, matériau 2d et ses applications Download PDF

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Publication number
WO2020221525A1
WO2020221525A1 PCT/EP2020/058686 EP2020058686W WO2020221525A1 WO 2020221525 A1 WO2020221525 A1 WO 2020221525A1 EP 2020058686 W EP2020058686 W EP 2020058686W WO 2020221525 A1 WO2020221525 A1 WO 2020221525A1
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lattice defects
atomic layer
defects
lattice
atoms
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PCT/EP2020/058686
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German (de)
English (en)
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Martin HEILMANN
Katja Höflich
Joao Marcelo LOPES
Lutz GEELHAAR
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Forschungsverbund Berlin E.V.
Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh
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Publication of WO2020221525A1 publication Critical patent/WO2020221525A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/02444—Carbon, e.g. diamond-like carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02499—Monolayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02694—Controlling the interface between substrate and epitaxial layer, e.g. by ion implantation followed by annealing

Definitions

  • the present invention relates to a method for producing a 2D material, such as, for example, a graphene-based 2D material, in which lattice defects are specifically generated.
  • the invention also relates to a 2D material, such as a graphene-based 2D material that contains lattice defects, and applications of the 2D material provided with the lattice defects, for example in the production of electronic, magnetic and / or optical components and / or sensors.
  • 2D materials such as graphene, promise novel applications in materials science, semiconductor technology or optoelectronics (see for example [1]).
  • Electronic and / or optical properties of 2D materials can be influenced in particular by the structure of the materials, the occurrence of defects and / or the functionalization by foreign atoms.
  • [2] describes a formaldehyde detector based on functionalized graphene.
  • heterostructures are of particular interest in which the graph is connected to one or more other 2D material (s) or other foreign substances (see, for example, [11]).
  • the bond takes place within a heterostructure with at least one 2D material via non-covalent bonds, in particular via van der Waals bonds.
  • the van der Waals bonds are characterized by a relatively weak coupling of the binding partners. This property can be exploited by using 2D material layers to suppress epitaxial material deposition as a cover material for selective area growth ([12]).
  • the weak coupling of the binding partners is a particular challenge.
  • the object of the invention is to produce an improved method for producing a 2D material and an improved 2D material with which disadvantages of conventional techniques are avoided.
  • the 2D material is to be characterized in particular by an expanded field of application, routine, scalable production, improved suitability for the production of van der Waals heterostructures and / or improved suitability for a reliable and reproducible setting of electronic, magnetic and / or distinguish optical properties of the 2D material or a component manufactured with it.
  • the above object is achieved by a method for producing a 2D material in which at least one atomic layer of a crystalline substance is formed on a carrier substrate and the at least one atomic layer is irradiated with particles in such a way that in the Atomic layer lattice defects are generated.
  • the lattice defects are specifically generated at predetermined defect positions with a predetermined geometric pattern along the areal extent of the atomic layer.
  • the lattice defects are terminated with foreign atoms which couple to unsaturated bonds of the lattice defects.
  • the above object is achieved by a 2D material which comprises at least one atomic layer of a crystalline substance which is preferably arranged on a carrier substrate.
  • the at least one atomic layer has lattice defects.
  • the lattice defects are arranged at predetermined defect positions with a predetermined geometric pattern and terminated with foreign atoms which are coupled to unsaturated bonds of the lattice defects.
  • the 2D material is preferably produced using the method according to the first general aspect of the invention.
  • the term "2D material” here generally refers to a layered material with a crystalline lattice structure, which consists of a single atomic layer (monolayer, layer plane with one atomic thickness) or several atomic layers (multilayer with several planes, e.g. in the case of Gra phen up to 10 layers). Typically, the atomic layers are connected to one another by non-covalent bonds.
  • the thickness of the 2D material ranges from the thickness of a monolayer to e.g. B. 4 nm. In the case of graphs, e.g. B. 10 layers a thickness of z. B. 3.5 mm, in general, the total thickness of multilayers can depend on the mutual orientation of the individual atomic layers and the stacking sequence.
  • the 2D material can be self-supporting or substrate-bound.
  • the term "lattice defect" refers to a defect within the lattice structure of the 2D material, in particular an absence of one or more atoms of the lattice structure in the single atomic layer or in the multilayer in an uppermost (exposed) or a lower atomic layer.
  • Lattice defects are arranged along the extent of the 2D material at a distance from its edge. Lattice defects have at least one unsaturated bond due to the lack of at least one atom. If there are several unsaturated bonds, bonds within the 2D material can also partially saturate themselves ([6]).
  • defect position denotes the position and possibly the extent of a lattice defect within the atomic layer.
  • the atomic layer is irradiated with particles in such a way that the lattice defects are generated at the predetermined defect positions.
  • the defect positions are determined by the choice of suitable irradiation parameters, in particular a mutual alignment of a particle beam source and the atomic position and an energy and dose of the particle beam.
  • the defect positions set by irradiating the atomic layer have a non-statistical (non-stochastic) arrangement.
  • the arrangement of the defect positions with a predetermined geometric pattern has the advantage that properties of the 2D material can be set with increased accuracy and reproducibility.
  • the positions, dimensions and surface density of the lattice defects of the 2D material according to the invention, in contrast to conventional 2D materials, are specified by the production.
  • the arrangement of the defect positions can depend on the desired application of the 2D material, e.g. B. as an electronic component, as a magnetic component, as an optical component and / or as a sensor, optionally containing a van-der-Waals heterostructure can be selected.
  • the lattice defects form anchor points for the coupling of foreign atoms at predetermined positions in the 2D material.
  • the termination of the lattice defects of the 2D material according to the invention with foreign atoms comprises the binding of at least one foreign atom to each of the lattice defects with unsaturated bonds. Termination has the following advantages. First, the 2D material is stabilized at least temporarily. With the termination, a change in the 2D material, e.g. B. by the accumulation of unwanted foreign atoms or a remodeling of the lattice defects, ver avoided. The 2D material forms an intermediate product (template) that can be stored and transported and, if necessary, further processed. Second, by terminating the lattice defects, the 2D material can be given a predetermined electrical, magnetic, optical and / or chemical function. The termination can be done with foreign atoms, which are selected to set a certain property of the 2D material or promote the generation of van der Waals heterostructures, as will be explained in more detail below.
  • the crystalline substance includes e.g. B. carbon (graphene), boron (borophene), silicon (silicene), phosphorus (black phosphorous), hexagonal boron nitride (hBN) or a transition metal dichalcogenide, but can also consist of other elements that are used to form 2D- materials are suitable.
  • the production of the at least one atomic layer on the carrier substrate can, for. B. strat by chemical vapor deposition or physical vapor deposition on a Metallsub, z. B. made of copper or nickel, optionally with a subsequent transfer of the at least one atomic layer to the carrier substrate, or by converting a surface layer of the carrier substrate.
  • the carrier substrate can, for. B. a metal, a semiconductor, in particular Si or Ge, an insulator, in particular sapphire or S1O2, and / or a ceramic, in particular silicon carbide.
  • the 2D material is part of an electronic, magnetic and / or optical component, such as. B. a transistor, a Hall sensor, a light-emitting diode (LED) or a light-sensitive component (photodiode).
  • the electronic, magnetic and / or optical component which contains the 2D material according to the invention is considered to be a further independent aspect of the invention.
  • the termination of the lattice defects can include an accumulation of foreign atoms limited to the lattice defects.
  • the atomic layer in the areas between the lattice defects is preferably free of foreign atoms.
  • the termination of the lattice defects comprises the addition of foreign atoms to form an epitaxial heterostructure.
  • the atomic layer is connected to one or more other 2D material (s) or other foreign substances.
  • the termination of the lattice defects continues in the growth of an epitaxial structure on the atomic layer.
  • the lattice-defective nucleation centers advantageously form for the growth of the epitaxial structure.
  • the epitaxial structure is a bound by van-der-Waals forces heterostructure that extends along the planar extension of the 2D material (plane heterostructure) and / or in a deviating from the planar extension of the 2D material, z. B. perpendicular direction (3D heterostructure) extends. In the latter case one speaks because of the possibly covalent bond within the grown structure, z. B.
  • the accumulation of the foreign atoms first on the lattice defects causes a local reduction in the surface tension, so that in an epitaxial deposition of further foreign atoms z. B. from the vapor or liquid phase, these preferentially attach to the foreign atoms already in existence.
  • the layer growth of the hetero structure subsequently takes place in the plane of the atomic layer or out of it.
  • a con tacting of the heterostructure is then provided to form an electronic, magnetic and / or optical component.
  • the contacting includes the deposition of an electrically conductive material in contact with different sections, e.g. B. the different layers of the heterostructure. Structuring and / or masking of the heterostructure can be provided before the electrically conductive material is deposited.
  • the epitaxially deposited 3D structures can be embedded in an electrically insulating layer before contact is made, on the surface of which the 3D structures are exposed and contacted.
  • the termination of the lattice defects includes a coupling of functionalization substance foreign atoms, which are provided for setting electronic, chemical and / or optical properties of the 2D material.
  • the termination has a double function in relation to the stabilization and the functionalization of the 2D material.
  • the functionalization substance foreign atoms include e.g. B. Atoms with which the conductivity of the 2D material can be adjusted, such. B. boron or nitrogen.
  • B. Atoms with which the conductivity of the 2D material can be adjusted such.
  • B. boron or nitrogen such.
  • the functionalization substance foreign atoms comprise atoms that represent specific chemical binding partners for substances to be detected, such as. B. B in graphs for the detection of ammonia (see eg [2], [17] or [18]).
  • the 2D material terminated with the functionalization substance foreign atoms represents an electrically, chemically or optically readable sensor material.
  • a chemical sensor is equipped with this sensor material in order to selectively at least one type of molecules to be detected tie.
  • the functionalization substance foreign atoms comprise atoms which influence the optical properties of the 2D material, such as e.g. B. Selenium in monolayer molybdenum (IV) sulfide [19] or oxygen in hBN [20]
  • the termination of the lattice defects comprises a coupling of stabilizing substance foreign atoms.
  • Stabilizing substance foreign atoms are foreign atoms that are suitable for the temporary stabilization of the lattice defects. Flierzu form the stabilizing substance foreign atoms with the lattice defects preferential, a weak bond that, if necessary, by supplying energy, eg. B. heating, can be solved without damaging the atomic layer of the 2D material.
  • the stabilizing substance foreign atoms comprise nitrogen, hydrogen, oxygen and / or OH groups. Termination with the stabilizing substance foreign atoms has the advantage that the 2D material can be processed until further processing, e.g. B. the deposition of a van der Waals heterostructure or a functionalization with functionalization substance foreign atoms remains unchanged. The deposition of the van der Waals heterostructure and / or the functionalization can be separated in time and place from the production of the 2D material. For example, immediately before the growth of a van der Waals heterostructure, the stabilizing substance foreign atoms can be thermally removed by heating in order to restore the non-terminated lattice defects to which the atoms bind for the heterostructure to be grown.
  • the pattern preferably has a regular arrangement with equal distances between defect positions, a surface arrangement of the lattice defects and / or a line arrangement of the lattice defects.
  • the grid defects are generated by ballistic energy input by means of particle irradiation of the atomic layer.
  • the ballistic energy input has the advantage that damage to the lattice structure of the atomic layer outside the desired defect positions can be avoided.
  • a focused irradiation with ions in particular with helium and / or neon ions, eg. B. in a helium-neon-ion microscope.
  • irradiation with electrons can be provided. Irradiation with light ions, however, has advantages in terms of scalability, controllability, focusability and the gentle input of energy into the 2D material.
  • the ion irradiation is advantageously carried out with high accuracy, e.g. B. with a dose of one ion per defect position to 10 6 ions or even more ions per defect position, adjustable. Tests (reference studies) can be used to determine for a specific 2D material and a type of ion used which ion dose for a desired result, e.g. B. the creation of nucleation centers is optimal.
  • the irradiation with helium ions is preferably carried out with an acceleration voltage of the helium ions below 100 kV, particularly preferably below 50 kV.
  • Helium ions with such low energies can advantageously be focused on a point diameter on the irradiated atomic layer that is smaller than 1 nm.
  • the dose is based on an optimized number of ions per defect position, e.g. B. set in a range of 5 to 20 ions per defect position, but can also be smaller or larger depending on the irradiated th crystalline substance.
  • the lattice defects comprise spaced-apart point defects, in particular point voids, in the atomic position, there are advantages for the selective termination and / or functionalization with individual foreign atoms.
  • a single defect in a graphene 2D material can be created as a lattice defect by removing a carbon atom.
  • the point defects can be generated directly by irradiating the atomic layer with the particles.
  • the energy and the dose of the particles are set so that the ballistic energy input is only effective on an area that contains a single atom.
  • the point defects can be generated by a two-stage process in which the atomic layer is first irradiated with the particles, followed by a passivation step.
  • the atomic layer can be irradiated with an energy and dose of the particles which form larger defects than point defects. Through the subsequent passivation, including z. B. a partial thermal healing of the lattice structure at the git terde Anlagenen, only point defects remain.
  • This variant of the invention has advantages with regard to the simplified control of the particle irradiation.
  • intrinsic lattice defects can be removed before the atomic layer is irradiated with the particles.
  • lattice defects in the atomic layer are thermally healed. This advantageously minimizes the number of intrinsic lattice defects, so that their number is negligible compared to the subsequently generated lattice defects, or the intrinsic lattice defects are even completely eliminated.
  • FIG. 1 the position of the 2D material with features of preferred embodiments of the invention
  • FIG. 2 a top view of 2D material according to the invention with an illustration of various examples of the arrangement of lattice defects;
  • Figure 3 the Fier position of a van der Waals Fletero structure with features more preferred
  • FIG. 4 the position of an electronic component with features of preferred embodiments of the invention.
  • the setting up of a 2D material 100 comprises the following steps shown in FIG. First, according to Figure 1A, an atomic layer 10 of a crystalline substance 11, z. B. made of graphene, on a carrier substrate 20, for. B. made of SiC or graphite, which comprises a large number of graphene layers.
  • epitaxial graphene is produced by subliming SiC. Commercially available SiC is first placed on a flat surface in Ar / H2 etched at atmospheric pressure and a temperature of 1450 ° C for 15 min. Graphs are then formed on this sample in an Ar atmosphere at atmospheric pressure and a temperature increase to 1600 ° C. for 15 min.
  • the atomic layer 10 can have a typical extension parallel to the surface of the carrier substrate 20 in the range of 10 mm * 10 mm or more, such as. B. up to the size of a used wafer material in the range of 10 cm, with a plurality of lattice defects are generated with a predetermined pattern.
  • the atomic layer 10 made of graphene is irradiated with particles 30, so that lattice defects 12 are generated.
  • the particles 30 are formed by a focused He ion beam which is directed onto the atomic layer 10 when an acceleration voltage of 30 kV is applied.
  • the duration of the irradiation (setting of the ion flux per defect position) is selected based on tests or simulations so that the desired lattice defect z. B. is generated in the form of a point defect.
  • Lattice defects are written into the atomic layer 10 with a predetermined pattern, the pattern e.g. B. a line or a matrix of regularly spaced lattice defects with a mutual distance of z. B.
  • the lattice defects 12 are terminated e.g. B. with functionalizing substance foreign atoms 15 or stabilizing substance foreign atoms 16.
  • functionalizing substance foreign atoms 15 or stabilizing substance foreign atoms 16 unsaturated bonds of lattice defects 12 are saturated by nitrogen atoms, which act as stabilizing substance foreign atoms 16.
  • the nitrogen atoms are bound by applying radical nitrogen to the surface of the atomic layer 10, generated by a plasma source for a duration that depends on the equipment and process conditions used and, for example, B. 30 min.
  • the 2D material 100 is a stable intermediate product that can be stored, transported or prepared for further processing.
  • FIG. 2 shows, by way of example, geometric patterns 13 of defect positions at which lattice defects are inscribed by the particle irradiation and which comprise a matrix arrangement (FIG. 2A), a line arrangement (FIG. 2B) or a circular arrangement (FIG. 2C).
  • FIG. 2A shows, by way of example, geometric patterns 13 of defect positions at which lattice defects are inscribed by the particle irradiation and which comprise a matrix arrangement (FIG. 2A), a line arrangement (FIG. 2B) or a circular arrangement (FIG. 2C).
  • other patterns can alternatively be selected and / or different patterns can be combined, for example to generate predetermined electrical or optical specific properties in sections of the 2D material.
  • FIG. 3 illustrates a modification of the method according to FIG. 1, in which, after the atomic layer 10 has been produced from the crystalline substance 11 (FIG. 3A) and the atomic layer 10 has been irradiated with particles 30 to form lattice defects 12 (FIG. 3B), the lattice defects 12 are included
  • Foreign nucleation atoms 14 are terminated and starting from these a second atomic layer 10A is grown to form a fletero structure 17 (FIG. 3C).
  • the Fletero structure 17 is formed by a graphene atom layer 10 and a hBN atom layer 10A, which are coupled via van der Waals bonds aside from the lattice defects.
  • nitrogen atoms are coupled to the lattice defects.
  • the hBN atomic layer 10A is generated by means of molecular beam epitaxy (MBE) using an effusion cell to generate a boron beam and a plasma source to generate a nitrogen beam.
  • the effusion cell is at a temperature of e.g. B. 1850 ° C operated.
  • the growth of the hBN atomic layer 10A takes place at an elevated temperature of the carrier substrate of z. B. 850 ° C and with a duration of z. B. 300 min.
  • two-dimensional hBN crystals initially grow laterally as so-called islands on the atomic layer 10, until the islands of neighboring nucleation centers meet and the hBN atomic layer 10A is formed as a closed layer (see FIG. 4A) .
  • the Fletero structure 17 can be provided with at least one further atomic layer, which is coupled to the uppermost, exposed atomic layer 10A via van der Waals bonds.
  • the growth of additional layers takes place at the defect centers, which serve for nucleation of the first layer and which are continued through the vertical heterostructure (not shown in the figures).
  • This process can generally be used to produce heterostructures from stacked crystalline monolayers and / or multilayers from different substances.
  • 3D heterostructures can epitaxially grow on the lattice defects 12 with the nucleation foreign atoms 14.
  • Figure 4 shows further steps for processing the 2D material 100 with the heterostructure 17 (Fi gur 4A) for the production of an inventive electronic and / or optical component provided with electrical contacts 51, 52 and 53, eg. B. a transistor 200 ( Figure 4G).
  • a first masking layer 41 is deposited on a section of the heterostructure 17 that is to become part of the transistor 200, and the 2D material of the heterostructure 17 is removed in the vicinity of the masking layer 41, e.g. By physical sputtering (Figure 4C). Electrically conductive layers are then deposited, e.g. B. of 10 nm titanium and 100 nm gold, to form the contacts 51, 53 in electrical connection with the heterostructure 17 ( Figure 4D). After removing the first masking layer 41 between the contacts 51, 53, second masking layers 42 are deposited which cover the contacts 51, 53 and lateral edges of the heterostructure 17 (FIG. 4E). In the gap between the second masking layers 42, the contact 52, for. B.
  • the Transis gate 200 is a field effect transistor in which z. B. form the first contact 51 a source electrode, the second contact 52 a gate electrode and the third contact 53 a drain electrode.

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Abstract

La présente invention concerne un procédé de fabrication d'un matériau 2D (100) comportant une génération d'une couche d'atomes (10) d'une substance cristalline (11) telle que, par exemple, du graphite, sur un substrat porteur (20) et une irradiation de la couche d'atomes (10) avec des particules (30) de manière que des défauts de réseau (12) sont générés dans la couche d'atomes (10), les défauts de réseau (12) étant générés à des positions de défaut selon un modèle géométrique prédéfini (13) le long de la couche d'atomes (10) et il est prévu une terminaison des défauts de réseau (12) avec des atomes étrangers (15, 16) qui se couplent à des liaisons non saturées des défauts de réseau (12). La présente invention concerne en outre un matériau 2D dans lequel des défauts de réseau (12) sont disposés à des positions de défaut selon un modèle géométrique prédéfini (13) et sont terminés avec des atomes étrangers (14) qui sont couplés au niveau de liaisons non saturées des défauts de réseau (12).
PCT/EP2020/058686 2019-04-30 2020-03-27 Procédé de fabrication d'un matériau 2d, matériau 2d et ses applications WO2020221525A1 (fr)

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