WO2020220463A1 - Tft阵列基板及oled显示面板 - Google Patents

Tft阵列基板及oled显示面板 Download PDF

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Publication number
WO2020220463A1
WO2020220463A1 PCT/CN2019/094536 CN2019094536W WO2020220463A1 WO 2020220463 A1 WO2020220463 A1 WO 2020220463A1 CN 2019094536 W CN2019094536 W CN 2019094536W WO 2020220463 A1 WO2020220463 A1 WO 2020220463A1
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Prior art keywords
electrode layer
layer
transparent electrode
anode
array substrate
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French (fr)
Inventor
余赟
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape

Definitions

  • the present invention relates to the field of display technology, in particular to a TFT array substrate and an OLED display panel.
  • OLED Organic Light Emitting Display
  • OLED has self-luminescence, low driving voltage, high luminous efficiency, short response time, high definition and contrast, close to 180° viewing angle, wide operating temperature range, and can realize flexible display and Large-area full-color display and many other advantages are recognized by the industry as the display device with the most potential for development.
  • OLED can be divided into passive matrix OLED (Passive Matrix OLED, PMOLED) and active matrix OLED (Active Matrix OLED, AMOLED) are two categories, namely direct addressing and thin film transistor (TFT) matrix addressing.
  • PMOLED Passive Matrix OLED
  • AMOLED Active Matrix OLED
  • TFT thin film transistor
  • AMOLED has pixels arranged in an array, is an active display type, has high luminous efficiency, and is generally used as a high-definition large-size display device.
  • OLED devices usually include: a substrate, an anode provided on the substrate, a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light emitting layer provided on the hole transport layer, An electron transport layer on the light-emitting layer, an electron injection layer provided on the electron transport layer, and a cathode provided on the electron injection layer.
  • the light-emitting principle of OLED devices is that semiconductor materials and organic light-emitting materials are driven by an electric field to cause light emission through carrier injection and recombination. Specifically, under a certain voltage drive, electrons and holes are injected from the cathode and anode into the electron transport layer and hole transport layer, respectively. The electrons and holes migrate through the electron transport layer and the hole transport layer to the light emitting layer, and then In the light-emitting layer, they meet to form excitons and excite light-emitting molecules, which emit visible light after radiative relaxation.
  • the under-screen camera technology is used to increase the screen-to-body ratio to achieve a full-screen design.
  • the OLED display panel adopting the under-screen camera technology is provided with a camera area corresponding to the camera, and the camera area needs to be non-display and with high transparency when using the camera.
  • an existing TFT array substrate of an OLED display panel using under-screen camera technology includes a substrate 100, a TFT layer 200 provided on the substrate 100, and a planarization layer 300 provided on the TFT layer 200 , The anode layer 400 provided on the planarization layer 300 and the pixel definition layer 500 provided on the anode layer 400.
  • the substrate 100 includes an effective display area 110 and a camera area 120 adjacent to the effective display area 110.
  • the anode layer 400 includes a first anode 410 located in the effective display area 110 and a second anode 420 located in the camera area 120.
  • the first anode 410 includes a first indium tin oxide (ITO) layer 4101, located in the A silver layer 4102 on an ITO layer 4101 and a second ITO layer 4103 on the silver (Ag) layer 4102, the second anode 420 is made of ITO as a whole.
  • ITO indium tin oxide
  • the thickness of the second anode 420 is generally thin (preferably 40nm), and its conductivity is poor (the resistance value is about ITO/Ag/ITO structure electrode (the thickness is 15nm/140nm) /15nm), resulting in signal delay during the luminescence display process, affecting the display effect of the corresponding position of the second anode 420, resulting in a decrease in luminous efficiency, and because the film structure of the first anode 410 and the second anode 420 are different, The number of processes increases, and the production cost increases.
  • the purpose of the present invention is to provide a TFT array substrate, which has high transmittance of the anode in the camera area, small resistance value, and high product quality.
  • Another object of the present invention is to provide an OLED display panel, which has high transmittance of the anode in the camera area, low resistance value, and high product quality.
  • the present invention first provides a TFT array substrate, including a substrate, a TFT layer provided on the substrate, a planarization layer provided on the TFT layer, and an anode layer provided on the planarization layer;
  • the substrate includes a camera area; the anode layer includes a first anode located in the camera area; the first anode includes a first bottom transparent electrode layer provided on the planarization layer, and a first bottom transparent electrode layer provided The first metal electrode layer on the upper side and the first top transparent electrode layer provided on the first metal electrode layer and the first bottom transparent electrode layer; the first metal electrode layer includes a first part with a grid structure, the second A part has a plurality of hollow holes, and the first top transparent electrode layer fills the plurality of hollow holes.
  • the thickness of the first top transparent electrode layer is uniform.
  • the thickness of the first top transparent electrode layer is 15-60 nm; the thickness of the first metal electrode layer is 30-80 nm; the thickness of the first bottom transparent electrode layer is 5-10 nm.
  • the thickness of the portion of the first top transparent electrode layer on the first metal electrode layer is smaller than the thickness of the portion of the first top transparent electrode layer on the first bottom transparent electrode layer.
  • the thickness of the part of the first top transparent electrode layer on the first metal electrode layer is 7-15 nm, and the thickness of the part of the first top transparent electrode layer on the first bottom transparent electrode layer is 15-60 nm.
  • the material of the first bottom transparent electrode layer is indium tin oxide
  • the material of the first metal electrode layer is silver
  • the material of the first top transparent electrode layer is indium tin oxide.
  • the substrate further includes an effective display area adjacent to the camera area;
  • the anode layer further includes a second anode located in the effective display area;
  • the second anode includes a second bottom transparent electrode layer provided on the planarization layer, a second metal electrode layer provided on the second bottom transparent electrode layer, and a second top transparent electrode provided on the second metal electrode layer Layer;
  • the second metal electrode layer is a whole surface structure.
  • the thickness of the second top transparent electrode layer is 15-60 nm; the thickness of the second metal electrode layer is 30-80 nm; the thickness of the second bottom transparent electrode layer is 5-10 nm;
  • the material of the second bottom transparent electrode layer is indium tin oxide
  • the material of the second metal electrode layer is silver
  • the material of the second top transparent electrode layer is indium tin oxide.
  • the grid line width of the first part is 2-8 ⁇ m.
  • the TFT array substrate further includes a pixel definition layer provided on the planarization layer and the anode layer; the pixel definition layer is provided with a first opening correspondingly located above the first portion.
  • the hollowing rate of the first part is 50% to 70%.
  • the present invention also provides an OLED display panel including the above-mentioned TFT array substrate.
  • the TFT array substrate of the present invention includes a substrate, a TFT layer, a planarization layer, and an anode layer.
  • the substrate includes a camera area
  • the anode layer includes a first anode located in the camera area
  • the first anode includes a
  • the first transparent bottom electrode layer, the first metal electrode layer, and the first top transparent electrode layer of the first metal electrode layer include a first part having a grid structure, the first part having a plurality of hollow holes, the first top
  • the transparent electrode layer fills a plurality of hollow holes, thereby greatly improving the penetration rate of the first anode, and reducing the resistance value of the first anode, effectively improving the quality of the product.
  • the OLED display panel of the present invention has a high transmittance of the anode in the camera area, a small resistance value, and high product quality.
  • FIG. 1 is a schematic cross-sectional view of a TFT array substrate of an OLED display panel using under-screen camera technology
  • FIG. 2 is a schematic cross-sectional view of the first embodiment of the TFT array substrate of the present invention.
  • FIG. 3 is a schematic top view of the first part of the first metal electrode layer of the TFT array substrate of the present invention.
  • FIG. 5 is a schematic cross-sectional view of the second embodiment of the TFT array substrate of the present invention.
  • FIG. 6 is a partial cross-sectional view of the first anode of the second embodiment of the TFT array substrate of the present invention.
  • the TFT array substrate of the first embodiment of the present invention includes a substrate 10, a TFT layer 20 provided on the substrate 10, a planarization layer 30 provided on the TFT layer 20, and a planarization layer 30 On the anode layer 40.
  • the substrate 10 includes a camera area 11.
  • the anode layer 40 includes a first anode 41 located in the camera area 11.
  • the first anode 41 includes a first bottom transparent electrode layer 411 disposed on the planarization layer 30, a first metal electrode layer 412 disposed on the first bottom transparent electrode layer 411, and a first metal electrode layer 412 and The first top transparent electrode layer 413 on the first bottom transparent electrode layer 411.
  • the first metal electrode layer 412 includes a first portion A having a grid structure, the first portion A has a plurality of hollow holes V, and the first top transparent electrode layer 413 fills the plurality of hollow holes V.
  • the thickness of the first top transparent electrode layer 413 is uniform, in order to reduce the first anode 41 in the area where the hollow hole V is located and the hollow hole V
  • the thickness of the first top transparent electrode layer 413 is 15-60 nm
  • the thickness of the first metal electrode layer 412 The thickness is 30 to 80 nm
  • the thickness of the first bottom transparent electrode layer 411 is 5 to 10 nm, thereby reducing the slight difference in conductivity in a small area.
  • the material of the first bottom transparent electrode layer 411 is indium tin oxide
  • the material of the first metal electrode layer 412 is silver
  • the material of the first top transparent electrode layer 413 is indium tin oxide.
  • the substrate 10 further includes an effective display area 12 adjacent to the camera area 11.
  • the anode layer 40 also includes a second anode 42 located in the effective display area 12.
  • the second anode 42 includes a second bottom transparent electrode layer 421 disposed on the planarization layer 30, a second metal electrode layer 422 disposed on the second bottom transparent electrode layer 421, and a second metal electrode layer 422 The second top transparent electrode layer 423.
  • the second metal electrode layer 422 has an entire surface structure.
  • the thickness of the second top transparent electrode layer 423 is 15-60 nm.
  • the thickness of the second metal electrode layer 422 is 30-80 nm.
  • the thickness of the second bottom transparent electrode layer 421 is 5-10 nm.
  • the material of the second bottom transparent electrode layer 421 is indium tin oxide, the material of the second metal electrode layer 422 is silver, and the material of the second top transparent electrode layer 423 is indium tin oxide.
  • the grid line width of the first part A is 2-8 ⁇ m.
  • the TFT array substrate further includes a pixel definition layer 50 provided on the planarization layer 30 and the anode layer 40.
  • the pixel definition layer 50 is provided with a first opening 51 correspondingly located above the first portion A and a second opening 52 correspondingly located above the second anode 42.
  • the hollow rate of the first part A is 50% to 70%, that is, the area of the area where the plurality of hollow holes V are located is 50% to 70% of the area enclosed by the edge of the first part A.
  • the first part A includes an outer frame A1 and a plurality of diamond-shaped frames A2 located inside the outer frame A1, a plurality of first strip portions A3, and A second strip portion A4, a plurality of third strip portions A5, and a plurality of fourth strip portions A6.
  • the multiple diamond-shaped frames A2 are arranged in an array. Any two adjacent diamond-shaped frames A2 in the same row of diamond-shaped frames A2 have opposite apex angles and the opposite apex angles are connected by a first strip portion A3, and any two adjacent diamond-shaped frames A2 in the same row of diamond-shaped frames A2 They have opposite apex angles and are connected by a second strip portion A4.
  • the top corners of the outermost diamond-shaped frame A2 except for the top corners connected to the first strip portion A3 and the second strip portion A4 pass through the plurality of third strip portions, respectively A5 is connected to the outer frame A1.
  • the opposite sides of two diamond-shaped frames A2 having opposite sides are connected by a fourth strip-shaped portion A6.
  • the shape portion A6 encloses a plurality of hollow holes V.
  • the first part A may also adopt other forms of grid-like structures with multiple hollow holes V, which will not affect the implementation of the present invention.
  • the substrate 10 is a flexible substrate, including a first flexible film 101, a first buffer layer 102, a second flexible film 103, and a second buffer layer 104 stacked in sequence, and the TFT layer 20 is provided on the On the second buffer layer 104, the material of the first flexible film 101 and the second flexible film 103 is polyimide (PI).
  • PI polyimide
  • the TFT layer 20 includes a first active layer 211 disposed on the second buffer layer 104 and located in the camera area 11, and a second active layer 211 disposed on the second buffer layer 104 and located in the effective display area 12.
  • the second top gate 252 on the second gate insulating layer 24 and above the second bottom gate 232 is provided on the second gate insulating layer
  • Two first vias 261 are provided above the two ends of the interlayer insulating layer 26, the second gate insulating layer 24, and the first gate insulating layer 22 corresponding to the first active layer 211.
  • the first source 271 and The first drain electrode 272 is in contact with both ends of the first active layer 211 through the two first via holes 261 respectively.
  • the interlayer insulating layer 26, the second gate insulating layer 24, and the first gate insulating layer 22 correspond to the second Two second via holes 262 are provided above the two ends of the active layer 212, and the second source electrode 273 and the second drain electrode 274 pass through the two second via holes 262 and the two ends of the second active layer 212, respectively. contact.
  • the planarization layer 30 is provided with a third via 31 above one of the first source 271 and the first drain 272, and the first anode 41 passes through the third via 31 and the first source 271 and the first drain.
  • One of the poles 272 touches.
  • the planarization layer 30 is provided with a fourth via 32 above one of the second source 273 and the second drain 274, and the second anode 42 passes through the fourth via 32 and the second source 273 and the second drain.
  • One of pole 274 touches.
  • the TFT array substrate further includes spacers (PS) 60 arranged on the pixel definition layer 50.
  • PS spacers
  • the difference between the TFT array substrate of the second embodiment of the present invention and the above-mentioned first embodiment is that in order to reduce the difference between the first anode 41 in the area where the hollow hole V is located and the area outside the area where the hollow hole V is located
  • the thickness of the part of the first top transparent electrode layer 413 on the first metal electrode layer 412 is smaller than that of the part of the first top transparent electrode layer 413 on the first bottom transparent electrode layer 411
  • the thickness specifically, on the basis that the thickness of the first metal electrode layer 412 is 30 to 80 nm and the thickness of the first bottom transparent electrode layer 411 is 5 to 10 nm, the first top transparent electrode layer 413 is located on the first
  • the thickness of the part on a metal electrode layer 412 is 7 ⁇ 15nm
  • the thickness of the part of the first top transparent electrode layer 413 on the first bottom transparent electrode layer 411 is 15 ⁇ 60nm, thereby reducing the conductivity in a small area Minor differences, the rest are the
  • the first anode 41 in the camera area 11 of the TFT array substrate of the present invention includes a first bottom transparent electrode layer 411, a first metal electrode layer 412, and a first top transparent electrode layer 413, which are arranged in sequence.
  • the first metal electrode layer 412 includes a first part A having a grid-like structure.
  • the first part A has a plurality of hollow holes V.
  • the first top transparent electrode layer 413 fills the plurality of hollow holes V. Since the first part A is grid-shaped The structure and has a plurality of hollow holes V, so that the first metal electrode layer 412 has a higher transmittance, and thus the first anode 41 has a higher transmittance as a whole, which is convenient for the realization of the under-screen camera technology.
  • An anode 41 adopts a structure of two transparent electrode layers plus a metal electrode layer.
  • the overall resistance value of the first anode 41 is small, which prevents the resistance value of the first anode 41 from being too large, which corresponds to the first anode 41 in the OLED display panel.
  • the luminous efficiency is reduced due to the influence of the display effect of the position, which effectively improves the quality of the product.
  • the present invention also provides an OLED display panel including the above-mentioned TFT array substrate, and the structure of the TFT array substrate will not be described repeatedly here.
  • the OLED display panel also includes a light-emitting layer disposed in the first opening 51 and the second opening 52 and a cathode located on the light-emitting layer to form an OLED device.
  • the first anode 41 in the camera area 11 of the OLED display panel of the present invention includes a first bottom transparent electrode layer 411, a first metal electrode layer 412, and a first top transparent electrode layer 413, which are arranged in sequence.
  • the first metal electrode layer 412 includes a first part A having a grid-like structure.
  • the first part A has a plurality of hollow holes V.
  • the first top transparent electrode layer 413 fills the plurality of hollow holes V. Since the first part A is grid-shaped
  • the structure has a plurality of hollow holes V, so that the first metal electrode layer 412 has a higher transmittance, and thus the first anode 41 has a higher transmittance as a whole, which is convenient for the realization of the under-screen camera technology.
  • One anode 41 adopts a structure of two transparent electrode layers plus one metal electrode layer.
  • the overall resistance value of the first anode 41 is small, which prevents the resistance value of the first anode 41 from being too large to correspond to the first anode 41 in the OLED display panel.
  • the luminous efficiency is reduced due to the influence of the display effect of the position, which effectively improves the quality of the product.
  • the TFT array substrate of the present invention includes a substrate, a TFT layer, a planarization layer, and an anode layer.
  • the substrate includes a camera area
  • the anode layer includes a first anode located in the camera area.
  • the first transparent bottom electrode layer, the first metal electrode layer, and the first top transparent electrode layer of the first metal electrode layer include a first part having a grid structure, the first part having a plurality of hollow holes, the first top
  • the transparent electrode layer fills a plurality of hollow holes, thereby greatly improving the penetration rate of the first anode, and reducing the resistance value of the first anode, effectively improving the quality of the product.
  • the OLED display panel of the present invention has a high transmittance of the anode in the camera area, a small resistance value, and high product quality.

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Abstract

本发明提供一种TFT阵列基板及OLED显示面板。本发明的TFT阵列基板包括衬底、TFT层、平坦化层及阳极层，衬底包括摄像头区，阳极层包括位于摄像头区内的第一阳极，该第一阳极包括依次设置的第一底透明电极层、第一金属电极层及第一顶透明电极层，第一金属电极层具有呈网格状结构的第一部分，该第一部分具有多个镂空孔，所述第一顶透明电极层填充多个镂空孔，从而大大提升了第一阳极的穿透率，并且降低了第一阳极的电阻值，有效地提升了产品的品质。

Description

TFT阵列基板及OLED显示面板 技术领域
本发明涉及显示技术领域，尤其涉及一种TFT阵列基板及OLED显示面板。
 背景技术
有机发光二极管显示装置（Organic Light Emitting Display，OLED）具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED（Passive Matrix OLED，PMOLED）和有源矩阵型OLED（Active Matrix OLED，AMOLED）两大类，即直接寻址和薄膜晶体管（TFT）矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。OLED器件通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层及设于电子注入层上的阴极。OLED器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
随着显示技术的发展，采用全面屏设计的显示装置越来越受到消费者的青睐。现有技术会采用屏下摄像头技术来提升屏占比以实现全面屏设计，采用屏下摄像头技术的OLED显示面板对应摄像头设置有摄像头区域，该摄像头区域需要在使用摄像头时不显示且具有高透光性，在不使用摄像头时进行正常显示。
请参阅图1，现有的一种采用屏下摄像头技术的OLED显示面板的TFT阵列基板包括衬底100、设于衬底100上的TFT层200、设于TFT层200上的平坦化层300、设于平坦化层300上的阳极层400及设于阳极层400上的像素定义层500。所述衬底100包括有效显示区110及与有效显示区110相邻的摄像头区120。所述阳极层400包括位于有效显示区110内的第一阳极410及位于摄像头区120内的第二阳极420，所述第一阳极410包括第一氧化铟锡（ITO）层4101、设于第一ITO层4101上的银层4102及设于银（Ag）层4102上的第二ITO层4103，所述第二阳极420整体采用ITO制作。为了保证第二阳极420的透光性，第二阳极420的厚度一般较薄（优选为40nm），其导电性较差（电阻值约为ITO/Ag/ITO结构的电极（厚度采用15nm/140nm/15nm）的200倍），导致发光显示过程中存在信号延迟，影响第二阳极420对应位置的显示效果，导致发光效率降低，并且由于第一阳极410与第二阳极420的膜层结构不同，制程数量增多，生产成本增加。
 技术问题
本发明的目的在于提供一种TFT阵列基板，摄像头区内阳极的穿透率高，且电阻值较小，产品品质高。
本发明的另一目的在于提供一种OLED显示面板，摄像头区内阳极的穿透率高，且电阻值较小，产品品质高。
 技术解决方案
为实现上述目的，本发明首先提供一种TFT阵列基板，包括衬底、设于衬底上的TFT层、设于TFT层上的平坦化层及设于平坦化层上的阳极层；
所述衬底包括摄像头区；所述阳极层包括位于摄像头区内的第一阳极；所述第一阳极包括设于平坦化层上的第一底透明电极层、设于第一底透明电极层上的第一金属电极层以及设于第一金属电极层及第一底透明电极层上的第一顶透明电极层；所述第一金属电极层包括呈网格状结构的第一部分，该第一部分具有多个镂空孔，所述第一顶透明电极层填充多个镂空孔。
所述第一顶透明电极层的厚度均匀。
所述第一顶透明电极层的厚度为15~60nm；所述第一金属电极层的厚度为30~80nm；所述第一底透明电极层的厚度为5~10nm。
所述第一顶透明电极层位于第一金属电极层上的部分的厚度小于第一顶透明电极层位于第一底透明电极层上的部分的厚度。
所述第一顶透明电极层位于第一金属电极层上的部分的厚度为7~15nm，第一顶透明电极层位于第一底透明电极层上的部分的厚度为15~60nm。
所述第一底透明电极层的材料为氧化铟锡，所述第一金属电极层的材料为银，所述第一顶透明电极层的材料为氧化铟锡。
所述衬底还包括与摄像头区相邻的有效显示区；所述阳极层还包括位于有效显示区内的第二阳极；
所述第二阳极包括设于平坦化层上的第二底透明电极层、设于第二底透明电极层上的第二金属电极层及设于第二金属电极层上的第二顶透明电极层；所述第二金属电极层为整面结构。
所述第二顶透明电极层的厚度为15~60nm；所述第二金属电极层的厚度为30~80nm；所述第二底透明电极层的厚度为5~10nm；
所述第二底透明电极层的材料为氧化铟锡，所述第二金属电极层的材料为银，所述第二顶透明电极层的材料为氧化铟锡。
所述第一部分的网格线宽为2~8μm。
所述TFT阵列基板还包括设于平坦化层及阳极层上的像素定义层；所述像素定义层设有对应位于第一部分上方的第一开口。
所述第一部分的镂空率为50%~70%。
本发明还提供一种OLED显示面板，包括上述的TFT阵列基板。
 有益效果
本发明的有益效果：本发明的TFT阵列基板包括衬底、TFT层、平坦化层及阳极层，衬底包括摄像头区，阳极层包括位于摄像头区内的第一阳极，第一阳极包括依次设置的第一底透明电极层、第一金属电极层及第一顶透明电极层，第一金属电极层包括呈网格状结构的第一部分，该第一部分具有多个镂空孔，所述第一顶透明电极层填充多个镂空孔，从而大大提升了第一阳极的穿透率，并且降低了第一阳极的电阻值，有效地提升了产品的品质。本发明的OLED显示面板的摄像头区内阳极的穿透率高，且电阻值较小，产品品质高。
 附图说明
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图中，
图1为现有的一种采用屏下摄像头技术的OLED显示面板的TFT阵列基板的剖视示意图；
图2为本发明的TFT阵列基板的第一实施例的剖视示意图；
图3为本发明的TFT阵列基板的第一金属电极层中第一部分的俯视示意图；
图4为本发明的TFT阵列基板的第一实施例的第一阳极的局部剖视图；
图5为本发明的TFT阵列基板的第二实施例的剖视示意图；
图6为本发明的TFT阵列基板的第二实施例的第一阳极的局部剖视图。
 本发明的实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图2，本发明的第一实施例的TFT阵列基板包括衬底10、设于衬底10上的TFT层20、设于TFT层20上的平坦化层30及设于平坦化层30上的阳极层40。
所述衬底10包括摄像头区11。所述阳极层40包括位于摄像头区11内的第一阳极41。所述第一阳极41包括设于平坦化层30上的第一底透明电极层411、设于第一底透明电极层411上的第一金属电极层412以及设于第一金属电极层412及第一底透明电极层411上的第一顶透明电极层413。所述第一金属电极层412包括呈网格状结构的第一部分A，该第一部分A具有多个镂空孔V，所述第一顶透明电极层413填充多个镂空孔V。
具体地，请结合图2及图4，在本发明的第一实施例中，所述第一顶透明电极层413的厚度均匀，为了降低第一阳极41在镂空孔V所在区域及镂空孔V所在区域以外区域之间的电流密度差异导致的显示差异，在本发明的第一实施例中，所述第一顶透明电极层413的厚度为15~60nm，所述第一金属电极层412的厚度为30~80nm，所述第一底透明电极层411的厚度为5~10nm，从而降低了小区域范围内导电性的微小差异。
具体地，所述第一底透明电极层411的材料为氧化铟锡，所述第一金属电极层412的材料为银，所述第一顶透明电极层413的材料为氧化铟锡。
具体地，所述衬底10还包括与摄像头区11相邻的有效显示区12。所述阳极层40还包括位于有效显示区12内的第二阳极42。所述第二阳极42包括设于平坦化层30上的第二底透明电极层421、设于第二底透明电极层421上的第二金属电极层422及设于第二金属电极层422上的第二顶透明电极层423。所述第二金属电极层422为整面结构。
进一步地，所述第二顶透明电极层423的厚度为15~60nm。所述第二金属电极层422的厚度为30~80nm。所述第二底透明电极层421的厚度为5~10nm。所述第二底透明电极层421的材料为氧化铟锡，所述第二金属电极层422的材料为银，所述第二顶透明电极层423的材料为氧化铟锡。
优选地，所述第一部分A的网格线宽为2~8μm。
具体地，所述TFT阵列基板还包括设于平坦化层30及阳极层40上的像素定义层50。所述像素定义层50设有对应位于第一部分A上方的第一开口51及对应位于第二阳极42上方的第二开口52，后续利用该TFT阵列基板制作OLED显示面板时，该第一部分A与OLED器件的发光区相对应。
优选地，所述第一部分A的镂空率为50%~70%，也即多个镂空孔V所在区域面积为第一部分A边缘所围面积的50%~70%。
具体地，请参阅图3，在本发明的一优选实施例中，所述第一部分A包括外框A1以及位于外框A1内侧的多个菱形框A2、多个第一条状部A3、多个第二条状部A4、多个第三条状部A5及多个第四条状部A6。所述多个菱形框A2呈阵列式排布。同一行菱形框A2中任意两个相邻的菱形框A2具有相对的顶角且相对的顶角经一第一条状部A3连接，同一列菱形框A2中任意两个相邻的菱形框A2具有相对的顶角且相对的顶角经一第二条状部A4连接。多个菱形框A2中，最外侧的菱形框A2的顶角中除了与第一条状部A3及第二条状部A4连接的顶角外的其他顶角分别经多个第三条状部A5与外框A1连接。任意四个相邻的菱形框A2中，具有相对的侧边的两个菱形框A2的相对的侧边经一第四条状部A6连接。在该优选实施例中，由外框A1、多个菱形框A2、多个第一条状部A3、多个第二条状部A4、多个第三条状部A5及多个第四条状部A6围出多个镂空孔V。当然，在本发明的其他实施例中，该第一部分A也可采用其他形式的具有多个镂空孔V的网格状结构，并不会影响本发明的实现。
具体地，所述衬底10为柔性衬底，包括依次层叠设置的第一柔性薄膜101、第一缓冲层102、第二柔性薄膜103及第二缓冲层104，所述TFT层20设于第二缓冲层104上，第一柔性薄膜101及第二柔性薄膜103的材料为聚酰亚胺（PI）。
具体地，所述TFT层20包括设于第二缓冲层104上且位于摄像头区11内的第一有源层211、设于第二缓冲层104上且位于有效显示区12内的第二有源层212、设于第二缓冲层104、第一有源层211及第二有源层212上的第一栅极绝缘层22、设于第一栅极绝缘层22上且位于第一有源层211上方的第一底栅极231、设于第一栅极绝缘层22上且位于第二有源层212上方的第二底栅极232、设于第一栅极绝缘层22、第一底栅极231及第二底栅极232上的第二栅极绝缘层24、设于第二栅极绝缘层24上且位于第一底栅极231上方的第一顶栅极251、设于第二栅极绝缘层24上且位于第二底栅极232上方的第二顶栅极252、设于第二栅极绝缘层24、第一顶栅极251及第二顶栅极252上的层间绝缘层26、设于层间绝缘层26上且位于摄像头区11内的第一源极271及第一漏极272以及设于层间绝缘层26上且位于有效显示区12内的第二源极273及第二漏极274。层间绝缘层26、第二栅极绝缘层24及第一栅极绝缘层22对应第一有源层211的两端上方设有两个第一过孔261，所述第一源极271及第一漏极272分别经两个第一过孔261与第一有源层211的两端接触，层间绝缘层26、第二栅极绝缘层24及第一栅极绝缘层22对应第二有源层212的两端上方设有两个第二过孔262，所述第二源极273及第二漏极274分别经两个第二过孔262与第二有源层212的两端接触。所述平坦化层30对应第一源极271及第一漏极272中的一个上方设有第三过孔31，第一阳极41经第三过孔31与第一源极271及第一漏极272中的一个接触。所述平坦化层30对应第二源极273及第二漏极274中的一个上方设有第四过孔32，第二阳极42经第四过孔32与第二源极273及第二漏极274中的一个接触。
具体地，所述TFT阵列基板还包括设于像素定义层50上的隔垫物（PS）60。
请结合图5及图6，本发明的第二实施例的TFT阵列基板与上述第一实施例的区别在于，为了降低第一阳极41在镂空孔V所在区域及镂空孔V所在区域以外区域之间的电流密度差异导致的显示差异，设置第一顶透明电极层413位于第一金属电极层412上的部分的厚度小于第一顶透明电极层413位于第一底透明电极层411上的部分的厚度，具体为在所述第一金属电极层412的厚度为30~80nm以及所述第一底透明电极层411的厚度为5~10nm的基础上，所述第一顶透明电极层413位于第一金属电极层412上的部分的厚度为7~15nm，第一顶透明电极层413位于第一底透明电极层411上的部分的厚度为15~60nm，从而降低了小区域范围内导电性的微小差异，其余均与第一实施例相同，在此不再赘述。
需要说明的是，本发明的TFT阵列基板设置摄像头区11内的第一阳极41包括依次设置的第一底透明电极层411、第一金属电极层412及第一顶透明电极层413，并且设置第一金属电极层412包括呈网格状结构的第一部分A，该第一部分A具有多个镂空孔V，第一顶透明电极层413填充多个镂空孔V，由于第一部分A呈网格状结构并具有多个镂空孔V，使得第一金属电极层412具有较高的穿透率，进而使得第一阳极41整体具有较高的穿透率，便于屏下摄像头技术的实现，同时由于第一阳极41采用两层透明电极层加一层金属电极层的结构，第一阳极41整体的电阻值较小，避免第一阳极41的电阻值过大对OLED显示面板中与第一阳极41对应位置的显示效果产生影响导致的发光效率降低，有效地提升了产品的品质。
基于同一发明构思，本发明还提供一种OLED显示面板，包括上述的TFT阵列基板，在此不再对TFT阵列基板的结构进行重复性描述。除了上述TFT阵列基板外，所述OLED显示面板还包括设于第一开口51及第二开口52内的发光层及位于发光层上的阴极以形成OLED器件。
需要说明的是，本发明的OLED显示面板设置摄像头区11内的第一阳极41包括依次设置的第一底透明电极层411、第一金属电极层412及第一顶透明电极层413，并且设置第一金属电极层412包括呈网格状结构的第一部分A，该第一部分A具有多个镂空孔V，第一顶透明电极层413填充多个镂空孔V，由于第一部分A呈网格状结构并具有多个镂空孔V，使得第一金属电极层412具有较高的穿透率，进而使得第一阳极41整体具有较高的穿透率，便于屏下摄像头技术的实现，同时由于第一阳极41采用两层透明电极层加一层金属电极层的结构，第一阳极41整体的电阻值较小，避免第一阳极41的电阻值过大对OLED显示面板中与第一阳极41对应位置的显示效果产生影响导致的发光效率降低，有效地提升了产品的品质。
综上所述，本发明的TFT阵列基板包括衬底、TFT层、平坦化层及阳极层，衬底包括摄像头区，阳极层包括位于摄像头区内的第一阳极，该第一阳极包括依次设置的第一底透明电极层、第一金属电极层及第一顶透明电极层，第一金属电极层包括呈网格状结构的第一部分，该第一部分具有多个镂空孔，所述第一顶透明电极层填充多个镂空孔，从而大大提升了第一阳极的穿透率，并且降低了第一阳极的电阻值，有效地提升了产品的品质。本发明的OLED显示面板的摄像头区内阳极的穿透率高，且电阻值较小，产品品质高。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (12)

  1. 一种TFT阵列基板，包括衬底、设于衬底上的TFT层、设于TFT层上的平坦化层及设于平坦化层上的阳极层；
    所述衬底包括摄像头区；所述阳极层包括位于摄像头区内的第一阳极；所述第一阳极包括设于平坦化层上的第一底透明电极层、设于第一底透明电极层上的第一金属电极层以及设于第一金属电极层及第一底透明电极层上的第一顶透明电极层；所述第一金属电极层包括呈网格状结构的第一部分，该第一部分具有多个镂空孔，所述第一顶透明电极层填充多个镂空孔。
  2. 如权利要求1所述的TFT阵列基板，其中，所述第一顶透明电极层的厚度均匀。
  3. 如权利要求2所述的TFT阵列基板，其中，所述第一顶透明电极层的厚度为15~60nm；所述第一金属电极层的厚度为30~80nm；所述第一底透明电极层的厚度为5~10nm。
  4. 如权利要求1所述的TFT阵列基板，其中，所述第一顶透明电极层位于第一金属电极层上的部分的厚度小于第一顶透明电极层位于第一底透明电极层上的部分的厚度。
  5. 如权利要求4所述的TFT阵列基板，其中，所述第一顶透明电极层位于第一金属电极层上的部分的厚度为7~15nm，第一顶透明电极层位于第一底透明电极层上的部分的厚度为15~60nm。
  6. 如权利要求1所述的TFT阵列基板，其中，所述第一底透明电极层的材料为氧化铟锡，所述第一金属电极层的材料为银，所述第一顶透明电极层的材料为氧化铟锡。
  7. 如权利要求1所述的TFT阵列基板，其中，所述衬底还包括与摄像头区相邻的有效显示区；所述阳极层还包括位于有效显示区内的第二阳极；
    所述第二阳极包括设于平坦化层上的第二底透明电极层、设于第二底透明电极层上的第二金属电极层及设于第二金属电极层上的第二顶透明电极层；所述第二金属电极层为整面结构。
  8. 如权利要求7所述的TFT阵列基板，其中，所述第二顶透明电极层的厚度为15~60nm；所述第二金属电极层的厚度为30~80nm；所述第二底透明电极层的厚度为5~10nm；
    所述第二底透明电极层的材料为氧化铟锡，所述第二金属电极层的材料为银，所述第二顶透明电极层的材料为氧化铟锡。
  9. 如权利要求1所述的TFT阵列基板，其中，所述第一部分的网格线宽为2~8μm。
  10. 如权利要求1所述的TFT阵列基板，还包括设于平坦化层及阳极层上的像素定义层；所述像素定义层设有对应位于第一部分上方的第一开口。
  11. 如权利要求1所述的TFT阵列基板，其中，所述第一部分的镂空率为50%~70%。
  12. 一种OLED显示面板，包括如权利要求1-所述的TFT阵列基板。
PCT/CN2019/094536 2019-04-28 2019-07-03 Tft阵列基板及oled显示面板 Ceased WO2020220463A1 (zh)

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