WO2020206801A1 - 一种感光器件、 tft 阵列基板及其显示面板 - Google Patents

一种感光器件、 tft 阵列基板及其显示面板 Download PDF

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Publication number
WO2020206801A1
WO2020206801A1 PCT/CN2019/086736 CN2019086736W WO2020206801A1 WO 2020206801 A1 WO2020206801 A1 WO 2020206801A1 CN 2019086736 W CN2019086736 W CN 2019086736W WO 2020206801 A1 WO2020206801 A1 WO 2020206801A1
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Prior art keywords
film transistor
oxide thin
thin film
tft
photosensitive device
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French (fr)
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卢马才
刘念
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/618,370 priority Critical patent/US11271014B2/en
Publication of WO2020206801A1 publication Critical patent/WO2020206801A1/zh
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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/471—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having different architectures, e.g. having both top-gate and bottom-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices

Definitions

  • the present invention relates to the field of flat display technology, in particular, a photosensitive device, a TFT array substrate and a display panel thereof.
  • TFT-LCD Thin Film Transistor-Liquid Crystal Display
  • Dominance for example, can be applied to audio-visual equipment such as computers, televisions, and mobile phones.
  • the structure of the liquid crystal panel is usually composed of a color filter substrate (Color Filter, CF), a thin film transistor array substrate (Thin Film Transistor Array Substrate, TFT Array Substrate referred to as TFT substrate), and a liquid crystal layer (Liquid Crystal Layer) arranged between the two substrates, its working principle is to control the liquid crystal molecules of the liquid crystal layer by applying a driving voltage on the two glass substrates The rotation of the backlight refracts the light from the backlight module to produce a picture.
  • the thin film transistors in the TFT substrate play a direct role in realizing normal display functions.
  • metal oxide thin film transistors which are used in next-generation display devices due to their advantages of high mobility, transparency, and low subthreshold swing.
  • a single metal oxide thin film transistor such as an IGZO type TFT, is difficult to use for optical detection on a display substrate due to the large optical band gap of the metal oxide semiconductor material and low response to visible light.
  • FIG. 4 it illustrates the influence on the Id-Vg characteristics of the metal oxide thin film transistor under light and non-light conditions.
  • the TFT array substrate on which it is located has relatively weak optical detection capabilities, and accordingly, it is not suitable for applications such as fingerprint recognition in display screens and ambient light detection required by the industry. It is not conducive to its application as a next-generation display device.
  • One aspect of the present invention is to provide a photosensitive device, which adopts a novel oxide thin film transistor layer structure arrangement, which effectively improves its overall response to ambient light, thereby expanding its applicable range.
  • a photosensitive device comprising a first oxide thin film transistor (Oxide Thin-Film Transistor, TFT) and a second oxide thin film transistor, wherein the drain of the first oxide thin film transistor is electrically connected to the second oxide
  • TFT Oxide Thin-Film Transistor
  • the photosensitive device involved in the present invention adopts a multilayer oxide thin film transistor structure configuration, which can greatly improve its response to ambient light, breaking through the small response of a single thin film transistor to light and restricting it as a visible light detection
  • the application of components is limited, so that the photosensitive device involved in the present invention can detect ambient light, thereby expanding its applicable range.
  • the first oxide thin film transistor includes a top gate type (Top gate) IGZO (In-Ga-Zn-O) TFT, a top gate type IGZTO (In-Ga-Zn-Sn -O) One of TFT or BCE (Back Channel Etched) type IGZO TFT.
  • Top gate Top gate
  • IGZO In-Ga-Zn-O
  • IGZTO In-Ga-Zn-Sn -O
  • BCE Back Channel Etched
  • the second oxide thin film transistor includes one of a top gate type IGZO TFT, a top gate type IGZTO TFT, or a BCE type IGZO TFT.
  • it further includes a third oxide thin film transistor, wherein the drain of the second oxide thin film transistor is electrically connected to the gate of the third oxide thin film transistor.
  • the third oxide thin film transistor includes one of a top gate type IGZO TFT, a top gate type IGZTO TFT, or a BCE type IGZO TFT.
  • the first oxide thin film transistor, the second oxide thin film transistor and the third oxide thin film transistor are the same type of oxide thin film transistor.
  • it further includes a fourth oxide thin film transistor, wherein the drain of the third oxide thin film transistor is electrically connected to the gate of the fourth oxide thin film transistor.
  • the fourth oxide thin film transistor includes one of a top gate type IGZO TFT, a top gate type IGZTO TFT, or a BCE type IGZO TFT.
  • another aspect of the present invention provides a TFT array substrate, which includes a base layer.
  • the photosensitive device according to the present invention is provided on the base layer.
  • a detection circuit and a signal reading circuit are further provided on the base layer, and the output terminal of the detection circuit is connected to the gate terminal of the first oxide thin film transistor and can be connected to it. Input voltage, and the signal reading circuit is connected to the drain terminal of the second oxide thin film transistor and can read its current signal.
  • the detection circuit inputs a predetermined voltage to the gate terminal of the first oxide thin film transistor, and the signal reading circuit reads the output current signal corresponding to the drain terminal of the second oxide thin film transistor, and then Compare with preset photoelectric data, and then obtain the light intensity received by the photosensitive device according to the read current signal.
  • the predetermined voltage input to the gate terminal of the first oxide thin film transistor is between -25V and -10V.
  • another aspect of the present invention provides a display panel including the TFT array substrate related to the present invention.
  • the present invention relates to a photosensitive device, a TFT array substrate and a display panel thereof, wherein the photosensitive device is arranged in a multilayer oxide thin film transistor structure. Compared with a single oxide thin film transistor, it can greatly improve The range of response to ambient light can effectively break through the limitation that a single thin film transistor has a small response to light and limits its application as a visible light detection component, so that the photosensitive device involved in the present invention can realize the detection of ambient light , Which expands its applicable range.
  • the TFT array substrate and display panel on which it is located can realize the fingerprint recognition function under the screen or the detection function of the ambient light, so that the oxide TFT meets the requirements of the industry for its use in next-generation display devices.
  • FIG. 1 is a schematic structural diagram of a photosensitive device provided in an embodiment of the present invention
  • FIG. 2 is the photosensitive device shown in FIG. 1, which is the relationship between the gate terminal voltage Vg of the first oxide thin film transistor and the drain terminal current Id of the third oxide thin film transistor under no light conditions;
  • FIG. 3 is the photosensitive device shown in FIG. 1, which is the relationship between the gate terminal voltage Vg of the first oxide thin film transistor and the drain terminal current Id of the third oxide thin film transistor under illumination conditions;
  • FIG. 4 shows the Id-Vg characteristics of the oxide thin film transistor involved in the prior art under non-illuminated conditions and under illuminated conditions.
  • an embodiment of the present invention provides a photosensitive device, including a first oxide thin-film transistor (TFT) TFT1, a second oxide thin-film transistor TFT2, and a third oxide thin-film transistor TFT2. ⁇ Thin film transistor TFT 3.
  • the drain of the first oxide thin film transistor TFT1 is electrically connected to the gate of the second oxide thin film transistor TFT2, and the drain of the second oxide thin film transistor TFT2
  • the gate electrode of the third oxide thin film transistor TFT3 is electrically connected.
  • the photosensitive device involved in the present invention adopts a multilayer oxide thin film transistor structure configuration, which can greatly improve its response to ambient light, breaking through the small response of a single thin film transistor to light and restricting it as a visible light detection
  • the application of components is limited, so that the photosensitive device involved in the present invention can detect ambient light, thereby expanding its applicable range.
  • the first oxide thin film transistor, the second oxide thin film transistor, and the third oxide thin film transistor are preferably oxide thin film transistors of the same type. Specifically, it may be one of top-gate IGZO TFT, top-gate IGZTO TFT, or BCE-type IGZO TFT, but is not limited to.
  • the photosensitive device involved in the present invention is not limited to a three-level TFT structure. In different implementations, it can be a two-level TFT structure, or a four-level or above TFT structure, which can be specific as needed. It depends, and there is no limit.
  • another embodiment of the present invention provides a TFT array substrate, which includes a base layer.
  • the photosensitive device according to the present invention is provided on the base layer.
  • the base layer is further provided with a detection circuit and a signal reading circuit, wherein the output terminal of the detection circuit is connected to the gate terminal of the first oxide thin film transistor and can input a voltage to it, and the signal reading The circuit is connected to the drain terminal of the second oxide thin film transistor and can read its current signal.
  • the detection circuit inputs a predetermined voltage (Vg) to the gate terminal of the first oxide thin film transistor, and the signal reading circuit reads the corresponding output current of the drain terminal of the second oxide thin film transistor
  • Vg a predetermined voltage
  • Id the light intensity received by the photosensitive device is obtained according to the read current signal.
  • the predetermined voltage Vg input to the gate terminal of the first oxide thin film transistor is preferably between -25V and -10V, but is not limited. Further, please refer to FIG. 2 and FIG. 3, which illustrate the relationship between the read drain current signal and the gate voltage (Id-Vg) under unlit conditions and under illumination conditions.
  • another embodiment of the present invention provides a display panel, which includes the TFT array substrate related to the present invention.
  • the present invention relates to a photosensitive device, a TFT array substrate and a display panel thereof, wherein the photosensitive device is arranged in a multilayer oxide thin film transistor structure. Compared with a single oxide thin film transistor, it can greatly improve The range of response to ambient light can effectively break through the limitation that a single thin film transistor has a small response to light and limits its application as a visible light detection component, so that the photosensitive device involved in the present invention can realize the detection of ambient light , Which expands its applicable range.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)

Abstract

本发明提供了一种感光器件，包括第一氧化物薄膜晶体管和第二氧化物薄膜晶体管，其中所述第一氧化物薄膜晶体管的漏极电性连接所述第二氧化物薄膜晶体管的栅极。其中本发明涉及的所述感光器件，采用多层级设置的氧化物薄膜晶体管结构设置，可以大幅度提升其整体对环境光的响应幅度，突破单个薄膜晶体管对光响应较小而限制其作为可见光侦测元器件应用的限制，从而使得本发明涉及的所述感光器件能够实现对环境光的侦测，扩展了其可应用的范围。

Description

一种感光器件、TFT阵列基板及其显示面板 技术领域
本发明涉及平面显示技术领域，尤其是，其中的一种感光器件、TFT阵列基板及其显示面板。
 背景技术
已知，随着显示技术的发展，TFT-LCD(Thin Film Transistor-Liquid Crystal Display，薄膜晶体管液晶显示器)以其绝对的优势(成本低、画质好、功耗低等)在显示领域占据了主导地位，如可以应用到电脑、电视机、手机等视听设备中。
这其中，液晶面板的结构通常是由一彩色滤光片基板(Color Filter，CF)、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate简称TFT基板)、以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。其中所述TFT基板中的薄膜晶体管对于实现正常的显示功能，起到直接的作用。
进一步的，随着技术的不断发展，业界开发出了金属氧化物型的薄膜晶体管，由于其所具有的高迁移率、透明、低亚阈值摆幅等优点，被业界用于下一代显示器件。
但是，单个金属氧化物薄膜晶体管，如IGZO型TFT，由于其采用的金属氧化物半导体材料的光学带隙较大，对可见光响应较低，较难用于显示基板上进行光学检测。其中如图4所示，其图示了在光照条件下与非光照条件下，对所述金属氧化物薄膜晶体管的Id-Vg特性影响。
很明显如图4中所示，其所在的TFT阵列基板的光学侦测能力较弱，相应的，也就不适用于业界需要的用作显示屏内指纹识别、环境光侦测等应用，进而也就不利于其作为下一代显示器件的应用。
因此，确有必要来开发一种新型的感光器件，来克服现有技术中的缺陷。
 技术问题
本发明的一个方面是提供一种感光器件，其采用新型的氧化物薄膜晶体管层级结构设置，有效的提升了其整体对于环境光的响应，进而扩展了其可应用的范围。
 技术解决方案
本发明采用的技术方案如下：
一种感光器件，包括第一氧化物薄膜晶体管（Oxide Thin-Film Transistor，TFT）和第二氧化物薄膜晶体管，其中所述第一氧化物薄膜晶体管的漏极电性连接所述第二氧化物薄膜晶体管的栅极。其中本发明涉及的所述感光器件，采用多层级设置的氧化物薄膜晶体管结构设置，可以大幅度提升其对环境光的响应幅度，突破单个薄膜晶体管对光响应较小而限制其作为可见光侦测元器件应用的限制，从而使得本发明涉及的所述感光器件能够实现对环境光的侦测，从而扩展了其可应用的范围。
进一步的，在不同实施方式中，其中所述第一氧化物薄膜晶体管包括顶栅型(Top gate）IGZO (In-Ga-Zn-O) TFT、顶栅型IGZTO (In-Ga-Zn-Sn-O) TFT 或BCE (Back Channel Etched，背沟道刻蚀型) 型IGZO TFT中的一种。
进一步的，在不同实施方式中，其中所述第二氧化物薄膜晶体管包括顶栅型IGZO TFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
进一步的，在不同实施方式中，其还包括第三氧化物薄膜晶体管，其中所述第二氧化物薄膜晶体管的漏极电性连接所述第三氧化物薄膜晶体管的栅极。
进一步的，在不同实施方式中，其中所述第三氧化物薄膜晶体管包括顶栅型IGZO TFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
进一步的，在不同实施方式中，其中所述第一氧化物薄膜晶体管、第二氧化物薄膜晶体管和第三氧化物薄膜晶体管为同类型氧化物薄膜晶体管。
进一步的，在不同实施方式中，其还包括第四氧化物薄膜晶体管，其中所述第三氧化物薄膜晶体管的漏极电性连接所述第四氧化物薄膜晶体管的栅极。
进一步的，在不同实施方式中，其中所述第四氧化物薄膜晶体管包括顶栅型IGZO TFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
进一步的，本发明的又一方面提供了一种TFT阵列基板，其包括基底层。所述基底层上设置有本发明涉及的所述感光器件。
进一步的，在不同实施方式中，其中所述基底层上还设置有检测电路和信号读取电路，其中所述检测电路的输出端连接所述第一氧化物薄膜晶体管的栅极端并能向其输入电压，而所述信号读取电路连接所述第二氧化物薄膜晶体管的漏极端并能读取其电流信号。其中所述检测电路向所述第一氧化物薄膜晶体管的栅极端输入一预定电压，而所述信号读取电路则读取所述第二氧化物薄膜晶体管的漏极端相应的输出电流信号，然后与预设光电数据进行比对，进而根据读取的所述电流信号获得所述感光器件收到的光照强度。
进一步的，在不同实施方式中，其中所述第一氧化物薄膜晶体管的栅极端输入的预定电压在-25V~-10V。
进一步的，本发明的又一方面提供了一种显示面板，其包括本发明涉及的所述TFT阵列基板。
 有益效果
本发明涉及的一种感光器件、TFT阵列基板及其显示面板，其中所述感光器件采用多层级设置的氧化物薄膜晶体管结构设置，相对于单个氧化物薄膜晶体管而言，其可以大幅度提升其对环境光的响应幅度，从而能够有效突破单个薄膜晶体管对光响应较小而限制其作为可见光侦测元器件应用的限制，如此使得本发明涉及的所述感光器件能够实现对环境光的侦测，进而扩展了其可应用的范围。
例如，其所在的TFT阵列基板和显示面板，即可实现屏下指纹识别功能，或是对环境光的侦测功能，从而使得氧化物TFT符合业界对其用于下一代显示器件的使用要求。
 附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的一个实施方式中提供的一种感光器件的结构示意图；
图2为图1中所示的感光器件，其为在未照光条件下，所述第一氧化物薄膜晶体管的栅极端电压Vg与所述第三氧化物薄膜晶体管的漏极端电流Id的关系；
图3为图1中所示的感光器件，其为在照光条件下，所述第一氧化物薄膜晶体管的栅极端电压Vg与所述第三氧化物薄膜晶体管的漏极端电流Id的关系；
图4为现有技术中涉及的氧化物薄膜晶体管，在未照光条件下和照光条件下的Id-Vg特性。
 本发明的实施方式
以下将结合附图和实施例，对本发明涉及的一种感光器件、TFT基板及其显示面板的技术方案作进一步的详细描述。
请参阅图1所示，本发明的一个实施方式提供了一种感光器件，包括第一氧化物薄膜晶体管（oxide thin-film transistor，TFT）TFT1、第二氧化物薄膜晶体管TFT 2和第三氧化物薄膜晶体管TFT 3。
其中如图中所示，所述第一氧化物薄膜晶体管TFT 1的漏极电性连接所述第二氧化物薄膜晶体管TFT 2的栅极，所述第二氧化物薄膜晶体管TFT 2的漏极电性连接所述第三氧化物薄膜晶体管TFT 3的栅极。
其中本发明涉及的所述感光器件，采用多层级设置的氧化物薄膜晶体管结构设置，可以大幅度提升其对环境光的响应幅度，突破单个薄膜晶体管对光响应较小而限制其作为可见光侦测元器件应用的限制，从而使得本发明涉及的所述感光器件能够实现对环境光的侦测，从而扩展了其可应用的范围。
进一步的，在不同实施方式中，其中所述第一氧化物薄膜晶体管、第二氧化物薄膜晶体管以及第三氧化物薄膜晶体管优选为同类型的氧化物薄膜晶体管。具体可以是，顶栅型IGZO TFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种，但不限于。
进一步的，其中本发明涉及的所述感光器件并不限于三级TFT结构，在不同实施方式中，其可以是二级TFT结构，或是四级或是以上数量级的TFT结构，具体可随需要而定，并无限制。
进一步的，本发明的又一实施方式提供了一种TFT阵列基板，其包括基底层。所述基底层上设置有本发明涉及的所述感光器件。
其中所述基底层上还设置有检测电路和信号读取电路，其中所述检测电路的输出端连接所述第一氧化物薄膜晶体管的栅极端并能向其输入电压，而所述信号读取电路连接所述第二氧化物薄膜晶体管的漏极端并能读取其电流信号。
其中所述检测电路向所述第一氧化物薄膜晶体管的栅极端输入一预定电压（Vg），而所述信号读取电路则读取所述第二氧化物薄膜晶体管的漏极端相应的输出电流信号（Id），然后与预设光电数据进行比对，进而根据读取的所述电流信号获得所述感光器件收到的光照强度。
其中所述第一氧化物薄膜晶体管的栅极端输入的预定电压Vg优选在-25V~-10V，但不限于。进一步的，请参阅图2和图3所示，其图示了读取的所述漏极电流信号和栅极电压（Id-Vg），在未照光条件下和照光条件下的相互关系。
进一步的，本发明的又一个实施方式提供了一种显示面板，其包括本发明涉及的所述TFT阵列基板。
本发明涉及的一种感光器件、TFT阵列基板及其显示面板，其中所述感光器件采用多层级设置的氧化物薄膜晶体管结构设置，相对于单个氧化物薄膜晶体管而言，其可以大幅度提升其对环境光的响应幅度，从而能够有效突破单个薄膜晶体管对光响应较小而限制其作为可见光侦测元器件应用的限制，如此使得本发明涉及的所述感光器件能够实现对环境光的侦测，进而扩展了其可应用的范围。
本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (10)

  1. 一种感光器件，包括第一氧化物薄膜晶体管和第二氧化物薄膜晶体管；
    其中所述第一氧化物薄膜晶体管的漏极电性连接所述第二氧化物薄膜晶体管的栅极。
  2. 根据权利要求1所述的感光器件，其中所述第一氧化物薄膜晶体管包括顶栅型IGZO TFT、顶栅型IGZTO TFT 或BCE型IGZO TFT中的一种。
  3. 根据权利要求1所述的感光器件，其中所述第二氧化物薄膜晶体管包括顶栅型IGZO TFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
  4. 根据权利要求1所述的感光器件，其还包括第三氧化物薄膜晶体管，其中所述第二氧化物薄膜晶体管的漏极电性连接所述第三氧化物薄膜晶体管的栅极。
  5. 根据权利要求4所述的感光器件，其中所述第三氧化物薄膜晶体管包括顶栅型IGZO TFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
  6. 根据权利要求5所述的感光器件，其中所述第一氧化物薄膜晶体管、第二氧化物薄膜晶体管和第三氧化物薄膜晶体管为同类型氧化物薄膜晶体管。
  7. 一种TFT阵列基板，其包括基底层，其中所述基底层上设置有根据权利要求1所述的感光器件。
  8. 根据权利要求7所述的TFT阵列基板，其中所述基底层上还设置有检测电路和信号读取电路；
    其中所述检测电路的输出端连接所述第一氧化物薄膜晶体管的栅极端并能向其输入电压，而所述信号读取电路连接所述第二氧化物薄膜晶体管的漏极端并能读取其电流信号。
  9. 根据权利要求8所述的TFT阵列基板，其中所述第一氧化物薄膜晶体管栅极端输入的预定电压在-25V~-10V。
  10. 一种显示面板，其包括根据权利要求7所述的TFT阵列基板。
PCT/CN2019/086736 2019-04-11 2019-05-14 一种感光器件、 tft 阵列基板及其显示面板 Ceased WO2020206801A1 (zh)

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