CN110112138A - 一种感光器件、tft阵列基板及其显示面板 - Google Patents

一种感光器件、tft阵列基板及其显示面板 Download PDF

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CN110112138A
CN110112138A CN201910287732.6A CN201910287732A CN110112138A CN 110112138 A CN110112138 A CN 110112138A CN 201910287732 A CN201910287732 A CN 201910287732A CN 110112138 A CN110112138 A CN 110112138A
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film transistor
thin film
oxide thin
tft
sensor devices
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卢马才
刘念
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to PCT/CN2019/086736 priority patent/WO2020206801A1/zh
Priority to US16/618,370 priority patent/US11271014B2/en
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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Abstract

本发明提供了一种感光器件，包括第一氧化物薄膜晶体管和第二氧化物薄膜晶体管，其中所述第一氧化物薄膜晶体管的漏极电性连接所述第二氧化物薄膜晶体管的栅极。其中本发明涉及的所述感光器件，采用多层级设置的氧化物薄膜晶体管结构设置，可以大幅度提升其整体对环境光的响应幅度，突破单个薄膜晶体管对光响应较小而限制其作为可见光侦测元器件应用的限制，从而使得本发明涉及的所述感光器件能够实现对环境光的侦测，扩展了其可应用的范围。

Description

一种感光器件、TFT阵列基板及其显示面板
技术领域
本发明涉及平面显示技术领域，尤其是，其中的一种感光器件、TFT阵列基板及其显示面板。
背景技术
已知，随着显示技术的发展，TFT-LCD(Thin Film Transistor-Liquid CrystalDisplay，薄膜晶体管液晶显示器)以其绝对的优势(成本低、画质好、功耗低等)在显示领域占据了主导地位，如可以应用到电脑、电视机、手机等视听设备中。
这其中，液晶面板的结构通常是由一彩色滤光片基板(Color Filter，CF)、一薄膜晶体管阵列基板(Thin Film Transistor Array Substrate，TFT Array Substrate简称TFT基板)、以及一配置于两基板间的液晶层(Liquid Crystal Layer)所构成，其工作原理是通过在两片玻璃基板上施加驱动电压来控制液晶层的液晶分子的旋转，将背光模组的光线折射出来产生画面。其中所述TFT基板中的薄膜晶体管对于实现正常的显示功能，起到直接的作用。
进一步的，随着技术的不断发展，业界开发出了金属氧化物型的薄膜晶体管，由于其所具有的高迁移率、透明、低亚阈值摆幅等优点，被业界用于下一代显示器件。
但是，单个金属氧化物薄膜晶体管，如IGZO型TFT，由于其采用的金属氧化物半导体材料的光学带隙较大，对可见光响应较低，较难用于显示基板上进行光学检测。其中如图4所示，其图示了在光照条件下与非光照条件下，对所述金属氧化物薄膜晶体管的Id-Vg特性影响。
很明显如图4中所示，其所在的TFT阵列基板的光学侦测能力较弱，相应的，也就不适用于业界需要的用作显示屏内指纹识别、环境光侦测等应用，进而也就不利于其作为下一代显示器件的应用。
因此，确有必要来开发一种新型的感光器件，来克服现有技术中的缺陷。
发明内容
本发明的一个方面是提供一种感光器件，其采用新型的氧化物薄膜晶体管层级结构设置，有效的提升了其整体对于环境光的响应，进而扩展了其可应用的范围。
本发明采用的技术方案如下：
一种感光器件，包括第一氧化物薄膜晶体管(Oxide Thin-Film Transistor，TFT)和第二氧化物薄膜晶体管，其中所述第一氧化物薄膜晶体管的漏极电性连接所述第二氧化物薄膜晶体管的栅极。其中本发明涉及的所述感光器件，采用多层级设置的氧化物薄膜晶体管结构设置，可以大幅度提升其对环境光的响应幅度，突破单个薄膜晶体管对光响应较小而限制其作为可见光侦测元器件应用的限制，从而使得本发明涉及的所述感光器件能够实现对环境光的侦测，从而扩展了其可应用的范围。
进一步的，在不同实施方式中，其中所述第一氧化物薄膜晶体管包括顶栅型(Topgate)IGZO(In-Ga-Zn-O)TFT、顶栅型IGZTO(In-Ga-Zn-Sn-O)TFT或BCE(Back ChannelEtched，背沟道刻蚀型)型IGZO TFT中的一种。
进一步的，在不同实施方式中，其中所述第二氧化物薄膜晶体管包括顶栅型IGZOTFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
进一步的，在不同实施方式中，其还包括第三氧化物薄膜晶体管，其中所述第二氧化物薄膜晶体管的漏极电性连接所述第三氧化物薄膜晶体管的栅极。
进一步的，在不同实施方式中，其中所述第三氧化物薄膜晶体管包括顶栅型IGZOTFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
进一步的，在不同实施方式中，其中所述第一氧化物薄膜晶体管、第二氧化物薄膜晶体管和第三氧化物薄膜晶体管为同类型氧化物薄膜晶体管。
进一步的，在不同实施方式中，其还包括第四氧化物薄膜晶体管，其中所述第三氧化物薄膜晶体管的漏极电性连接所述第四氧化物薄膜晶体管的栅极。
进一步的，在不同实施方式中，其中所述第四氧化物薄膜晶体管包括顶栅型IGZOTFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
进一步的，本发明的又一方面提供了一种TFT阵列基板，其包括基底层。所述基底层上设置有本发明涉及的所述感光器件。
进一步的，在不同实施方式中，其中所述基底层上还设置有检测电路和信号读取电路，其中所述检测电路的输出端连接所述第一氧化物薄膜晶体管的栅极端并能向其输入电压，而所述信号读取电路连接所述第二氧化物薄膜晶体管的漏极端并能读取其电流信号。其中所述检测电路向所述第一氧化物薄膜晶体管的栅极端输入一预定电压，而所述信号读取电路则读取所述第二氧化物薄膜晶体管的漏极端相应的输出电流信号，然后与预设光电数据进行比对，进而根据读取的所述电流信号获得所述感光器件收到的光照强度。
进一步的，在不同实施方式中，其中所述第一氧化物薄膜晶体管的栅极端输入的预定电压在-25V～-10V。
进一步的，本发明的又一方面提供了一种显示面板，其包括本发明涉及的所述TFT阵列基板。
相对于现有技术，本发明的有益效果是：本发明涉及的一种感光器件、TFT阵列基板及其显示面板，其中所述感光器件采用多层级设置的氧化物薄膜晶体管结构设置，相对于单个氧化物薄膜晶体管而言，其可以大幅度提升其对环境光的响应幅度，从而能够有效突破单个薄膜晶体管对光响应较小而限制其作为可见光侦测元器件应用的限制，如此使得本发明涉及的所述感光器件能够实现对环境光的侦测，进而扩展了其可应用的范围。
例如，其所在的TFT阵列基板和显示面板，即可实现屏下指纹识别功能，或是对环境光的侦测功能，从而使得氧化物TFT符合业界对其用于下一代显示器件的使用要求。
附图说明
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明的一个实施方式中提供的一种感光器件的结构示意图；
图2为图1中所示的感光器件，其为在未照光条件下，所述第一氧化物薄膜晶体管的栅极端电压Vg与所述第三氧化物薄膜晶体管的漏极端电流Id的关系；
图3为图1中所示的感光器件，其为在照光条件下，所述第一氧化物薄膜晶体管的栅极端电压Vg与所述第三氧化物薄膜晶体管的漏极端电流Id的关系；
图4为现有技术中涉及的氧化物薄膜晶体管，在未照光条件下和照光条件下的Id-Vg特性。
具体实施方式
以下将结合附图和实施例，对本发明涉及的一种感光器件、TFT基板及其显示面板的技术方案作进一步的详细描述。
请参阅图1所示，本发明的一个实施方式提供了一种感光器件，包括第一氧化物薄膜晶体管(oxide thin-film transistor，TFT)TFT1、第二氧化物薄膜晶体管TFT 2和第三氧化物薄膜晶体管TFT 3。
其中如图中所示，所述第一氧化物薄膜晶体管TFT 1的漏极电性连接所述第二氧化物薄膜晶体管TFT 2的栅极，所述第二氧化物薄膜晶体管TFT 2的漏极电性连接所述第三氧化物薄膜晶体管TFT 3的栅极。
其中本发明涉及的所述感光器件，采用多层级设置的氧化物薄膜晶体管结构设置，可以大幅度提升其对环境光的响应幅度，突破单个薄膜晶体管对光响应较小而限制其作为可见光侦测元器件应用的限制，从而使得本发明涉及的所述感光器件能够实现对环境光的侦测，从而扩展了其可应用的范围。
进一步的，在不同实施方式中，其中所述第一氧化物薄膜晶体管、第二氧化物薄膜晶体管以及第三氧化物薄膜晶体管优选为同类型的氧化物薄膜晶体管。具体可以是，顶栅型IGZO TFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种，但不限于。
进一步的，其中本发明涉及的所述感光器件并不限于三级TFT结构，在不同实施方式中，其可以是二级TFT结构，或是四级或是以上数量级的TFT结构，具体可随需要而定，并无限制。
进一步的，本发明的又一实施方式提供了一种TFT阵列基板，其包括基底层。所述基底层上设置有本发明涉及的所述感光器件。
其中所述基底层上还设置有检测电路和信号读取电路，其中所述检测电路的输出端连接所述第一氧化物薄膜晶体管的栅极端并能向其输入电压，而所述信号读取电路连接所述第二氧化物薄膜晶体管的漏极端并能读取其电流信号。
其中所述检测电路向所述第一氧化物薄膜晶体管的栅极端输入一预定电压(Vg)，而所述信号读取电路则读取所述第二氧化物薄膜晶体管的漏极端相应的输出电流信号(Id)，然后与预设光电数据进行比对，进而根据读取的所述电流信号获得所述感光器件收到的光照强度。
其中所述第一氧化物薄膜晶体管的栅极端输入的预定电压Vg优选在-25V～-10V，但不限于。进一步的，请参阅图2和图3所示，其图示了读取的所述漏极电流信号和栅极电压(Id-Vg)，在未照光条件下和照光条件下的相互关系。
进一步的，本发明的又一个实施方式提供了一种显示面板，其包括本发明涉及的所述TFT阵列基板。
本发明涉及的一种感光器件、TFT阵列基板及其显示面板，其中所述感光器件采用多层级设置的氧化物薄膜晶体管结构设置，相对于单个氧化物薄膜晶体管而言，其可以大幅度提升其对环境光的响应幅度，从而能够有效突破单个薄膜晶体管对光响应较小而限制其作为可见光侦测元器件应用的限制，如此使得本发明涉及的所述感光器件能够实现对环境光的侦测，进而扩展了其可应用的范围。
本发明的技术范围不仅仅局限于上述说明中的内容，本领域技术人员可以在不脱离本发明技术思想的前提下，对上述实施例进行多种变形和修改，而这些变形和修改均应当属于本发明的范围内。

Claims (10)

1.一种感光器件；其特征在于，包括第一氧化物薄膜晶体管和第二氧化物薄膜晶体管；
其中所述第一氧化物薄膜晶体管的漏极电性连接所述第二氧化物薄膜晶体管的栅极。
2.根据权利要求1所述的感光器件；其特征在于，其中所述第一氧化物薄膜晶体管包括顶栅型IGZO TFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
3.根据权利要求1所述的感光器件；其特征在于，其中所述第二氧化物薄膜晶体管包括顶栅型IGZO TFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
4.根据权利要求1所述的感光器件；其特征在于，其还包括第三氧化物薄膜晶体管，其中所述第二氧化物薄膜晶体管的漏极电性连接所述第三氧化物薄膜晶体管的栅极。
5.根据权利要求4所述的感光器件；其特征在于，其中所述第三氧化物薄膜晶体管包括顶栅型IGZO TFT、顶栅型IGZTO TFT或BCE型IGZO TFT中的一种。
6.根据权利要求5所述的感光器件；其特征在于，其中所述第一氧化物薄膜晶体管、第二氧化物薄膜晶体管和第三氧化物薄膜晶体管为同类型氧化物薄膜晶体管。
7.一种TFT阵列基板，其包括基底层；其特征在于，其中所述基底层上设置有根据权利要求1所述的感光器件。
8.根据权利要求7所述的TFT阵列基板；其特征在于，其中所述基底层上还设置有检测电路和信号读取电路；
其中所述检测电路的输出端连接所述第一氧化物薄膜晶体管的栅极端并能向其输入电压，而所述信号读取电路连接所述第二氧化物薄膜晶体管的漏极端并能读取其电流信号。
9.根据权利要求8所述的TFT阵列基板；其特征在于，其中所述第一氧化物薄膜晶体管栅极端输入的预定电压在-25V～-10V。
10.一种显示面板；其特征在于，其包括根据权利要求7所述的TFT阵列基板。
CN201910287732.6A 2019-04-11 2019-04-11 一种感光器件、tft阵列基板及其显示面板 Pending CN110112138A (zh)

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Application publication date: 20190809