WO2020206795A1 - 有机发光二极管显示器及其制造方法 - Google Patents

有机发光二极管显示器及其制造方法 Download PDF

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Publication number
WO2020206795A1
WO2020206795A1 PCT/CN2019/086316 CN2019086316W WO2020206795A1 WO 2020206795 A1 WO2020206795 A1 WO 2020206795A1 CN 2019086316 W CN2019086316 W CN 2019086316W WO 2020206795 A1 WO2020206795 A1 WO 2020206795A1
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layer
organic light
anode
hydrophilic
diode display
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French (fr)
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刘华龙
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing

Definitions

  • This application relates to the field of display technology, and in particular to an organic light emitting diode display and a manufacturing method thereof.
  • Organic light emitting diodes (Organic Light Emitting Diode, OLED) have been widely used in the display field, lighting field and smart wear field due to their good self-luminous characteristics, high contrast, and fast response.
  • evaporation method there are two main methods for preparing OLED devices: evaporation method and inkjet printing method.
  • the use of full evaporation method to prepare large, medium and small size OLED display devices is quite mature compared to inkjet printing, and it has been used in commercial production.
  • the full evaporation method is difficult to be used to prepare high-resolution OLED devices due to low material utilization.
  • the material utilization rate of inkjet printing technology for preparing OLED devices is as high as 90%, and the cost of preparing OLED devices is about 17% lower than that of full evaporation technology.
  • the inkjet printing process does not require a mask to make it available for the preparation of high-resolution display devices. Therefore, the use of inkjet printing to prepare large-size and high-resolution OLED devices is a research focus in the display field.
  • a patterned photoresist (bank) is prepared to define the light-emitting area.
  • the patterned photoresist is to expose a part of the photoresist layer and develop it with a developer to form an opening on the photoresist layer, and the opening is located above the anode to define a light-emitting area.
  • residual photoresist and micron-level foreign particles will adhere to the ITO pattern.
  • the ITO surface is There is residual photoresist, which causes the ink droplets 11 to not spread evenly on the ITO pattern 10 in the light-emitting area, and there are micron-level foreign particles in individual pixels.
  • the residual photoresist and the non-functional film coverage of the foreign matter in the dried organic functional film layer will cause the OLED display device to display abnormally.
  • the purpose of the present application is to provide an organic light emitting diode display and a manufacturing method thereof to solve the problem that the ink droplets formed on the ITO pattern cannot be spread uniformly due to the residual photoresist and foreign matter on the ITO pattern, which causes the abnormal display of the OLED display device.
  • the organic functional layer in the organic light-emitting diode display has good spreadability in the light-emitting area, which prevents the organic light-emitting diode display from showing poor display.
  • a manufacturing method of an organic light emitting diode display comprising the following steps:
  • the substrate having a light-emitting area
  • the ink drop Forming an ink drop on the anode of the light-emitting area, the ink drop including a solvent and an organic functional material dissolved in the solvent;
  • the solvent in the ink droplet is evaporated to form an organic functional layer on the anode of the light-emitting area.
  • the preparation material of the hydrophilic layer is hydrophilic silicon dioxide, indium tin oxide, hydrophilic polyurethane, hydrophilic acrylate and hydrophilic epoxy resin. Any kind.
  • the preparation material of the hydrophilic layer is hydrophilic silicon dioxide.
  • the removing the hydrophilic layer of the light-emitting area includes the following steps: dry etching or wet etching is used to remove the hydrophilic layer of the light-emitting area .
  • the thickness of the hydrophilic layer is 2 nanometers to 10 microns.
  • the forming ink droplets on the anode of the light-emitting area includes the following steps: forming ink droplets on the anode of the light-emitting area by spraying.
  • the organic functional material is any one of a hole transport material, a hole injection material or an organic light emitting material.
  • the organic functional layer is an organic light-emitting layer.
  • the anode is an indium tin oxide layer or an indium zinc oxide layer.
  • organic light emitting diode display comprising:
  • a substrate the substrate having a light-emitting area
  • An anode, the anode is located on the substrate;
  • a patterned photoresist layer covering the hydrophilic layer and having an opening above the anode to define the light-emitting area of the substrate,
  • An organic functional layer the organic functional layer is located on the anode of the light-emitting area, the organic functional layer is formed on the hydrophilic layer by forming a hydrophilic layer on the anode and the substrate Photoresist layer, pattern the photoresist to pattern the photoresist layer to form the opening above the anode, remove the hydrophilic layer in the opening, and place on the anode in the opening
  • An ink drop is formed and the solvent in the ink drop is evaporated, and the ink drop includes the solvent and the organic functional material dissolved in the solvent.
  • the organic functional layer is an organic light emitting layer.
  • the preparation material of the hydrophilic layer is at least one of hydrophilic silicon dioxide, indium tin oxide, hydrophilic polyurethane, hydrophilic acrylate and hydrophilic epoxy resin. .
  • the preparation material of the hydrophilic layer is hydrophilic silicon dioxide.
  • the hydrophilic layer in the opening is removed by dry etching or wet etching.
  • the thickness of the hydrophilic layer is 2 nanometers to 10 micrometers.
  • ink droplets are formed on the anode in the opening by spraying.
  • the organic functional material is any one of a hole transport material, a hole injection material, or an organic light emitting material.
  • the anode is an indium tin oxide layer or an indium zinc oxide layer.
  • This application provides an organic light-emitting diode display and a manufacturing method thereof.
  • the light-emitting area is defined by forming a hydrophilic layer on the anode and then forming a patterned photoresist layer to form an opening above the anode.
  • the hydrophilic layer in the light-emitting area is removed to remove
  • the residual photoresist and impurity particles attached to the hydrophilic layer prevent the residual photoresist and impurity particles from causing the ink droplets to spread unevenly on the anode of the light-emitting area, so that the dried organic functional film layer cannot completely cover the anode of the light-emitting area. Thereby affecting the display effect of the organic light emitting diode display.
  • the organic functional layer is an organic light-emitting layer, the problem of uneven light emission during display of the organic light-emitting diode display can be avoided.
  • FIG. 1 is a schematic diagram of the structure of the organic functional layer on the ITO pattern of the light-emitting area in the traditional technology
  • FIG. 2 is a flowchart of a manufacturing method of an organic light emitting diode display according to an embodiment of the application
  • 3A-3G are schematic diagrams of the structure in the manufacturing process of the flowchart shown in FIG. 2.
  • FIG. 2 is a flowchart of a manufacturing method of an organic light emitting diode display according to an embodiment of the application.
  • the manufacturing method of the organic light emitting diode display includes the following steps:
  • the substrate 20 may be a glass substrate or a flexible substrate.
  • the preparation materials of the flexible substrate include, but are not limited to, polyimide and polyethylene terephthalate.
  • the substrate 20 may also be a thin film transistor array substrate.
  • the thin film transistor array substrate includes a substrate and thin film transistors arranged in an array on the substrate.
  • the thin film transistor may be a single crystal silicon thin film transistor, a polysilicon thin film transistor or a metal oxide thin film transistor.
  • the thin film transistor array substrate may further include a passivation layer and a planarization layer.
  • the passivation layer is used to block ions from entering the thin film crystal to prevent the ions from affecting the electrical properties of the thin film transistor.
  • the planarization layer is used to make the surface of the thin film transistor array substrate more even.
  • a conductive layer on the entire surface is formed on the substrate 20, photoresist is coated on the conductive layer, and the photoresist is exposed, and then the photoresist is treated with a developer to remove part of the photoresist.
  • the etching process removes the conductive layer not covered by the photoresist, and then removes the remaining photoresist to form the anode.
  • the conductive layer may be a single layer or multiple layers.
  • the anode When the anode is a transparent electrode, the anode may be an indium tin oxide layer or an indium zinc oxide layer. When the anode is a reflective electrode or a semi-transparent electrode, it may also be a stack of an indium tin oxide layer and a metal layer.
  • one of a chemical vapor deposition process, a sputtering process, a printing process, a coating process, a vacuum evaporation process, and an atomic layer deposition process is used to form the hydrophilic layer 22 on the anode 21 and the substrate 20.
  • the hydrophilic layer 22 may be an inorganic hydrophilic layer.
  • the preparation material of the hydrophilic layer 22 is hydrophilic silicon dioxide and indium tin oxide.
  • the hydrophilic layer 22 may also be an organic hydrophilic layer.
  • the preparation material of the hydrophilic layer 22 is hydrophilic polyurethane, hydrophilic acrylate or hydrophilic epoxy.
  • the hydrophilic layer 22 may also be a stack of an inorganic hydrophilic layer and an inorganic hydrophilic layer.
  • the thickness of the hydrophilic layer 22 is 2 nanometers to 10 microns. When the hydrophilic layer 22 is made of hydrophilic silica, it is beneficial to make the thickness of the hydrophilic layer 22 thinner and have better adhesion to the substrate 20.
  • the entire surface of the photoresist layer is formed on the hydrophilic layer 22 formed in step S22 by coating, a mask is used to expose a partial area of the entire surface of the photoresist layer, and then the exposed light is processed by a developer.
  • the resist layer is developed to remove a part of the photoresist to form an opening 200a.
  • the opening 200a is located above the anode 21.
  • the opening 200a defines the light-emitting area of the substrate 20.
  • the patterned photoresist layer 23 covers the photoresist outside the opening 200a. Water layer 22.
  • the size of the opening 200a is (200 ⁇ 20) ⁇ m ⁇ (75 ⁇ 5) ⁇ m (length ⁇ width).
  • the photoresist layer is photoresist.
  • Photoresist is mainly composed of resin, photosensitizer, solvent and additives.
  • the resin is the binder, and the sensitizer is a compound with strong light activity.
  • photoresist can be divided into negative photoresist and positive photoresist.
  • the exposed part of the negative photoresist will be crosslinked, the crosslinked part is insoluble in the developing solution, and the unexposed part of the negative photoresist is soluble in the developing solution.
  • the exposed part of the positive photoresist will dissociate into a substance soluble in the developer, while the unexposed part will not dissolve in the developer.
  • dry etching or wet etching is used to remove the hydrophilic layer 22 in the light-emitting region (in the opening 200a).
  • the residual photoresist attached to the hydrophilic layer 22 of the light-emitting area due to the formation of the patterned photoresist will also be removed, and the other photoresist attached to the hydrophilic layer 22 of the light-emitting area
  • the impurity particles will also be removed as the hydrophilic layer 22 of the light-emitting region is removed.
  • ink droplets 24 are formed by spraying on the anode 21 in the light-emitting area.
  • Spraying includes inkjet printing. Since the photoresist and other impurity particles remaining in the light-emitting area are removed through step S24, and the hydrophilic layer 22 will not affect the spread of the ink droplets 24 on the anode 21 of the light-emitting area, the ink droplets 24 can be evenly spread on On the anode 21 of the light-emitting area.
  • the ink drop 24 includes a solvent and an organic functional material dissolved in the solvent.
  • the organic functional material is one of hole transport materials, hole transport materials or organic light-emitting materials.
  • the solvent is an organic solvent.
  • the hole transport material and the hole injection material facilitate the injection of holes into the organic light-emitting layer. Organic light-emitting materials are excited when holes and electrons are combined to emit visible light.
  • the organic functional layer 25 may be one of a hole transport layer, a hole injection layer, and an organic light emitting layer. Since the ink droplets 24 can be evenly spread on the anode 21 of the light-emitting area, the organic functional layer 25 can be spread on the anode 21 of the entire light-emitting area.
  • the organic functional layer 25 is an organic light-emitting layer, it can avoid the problem of uneven light emission during the display of the organic light-emitting diode display, that is, the mura phenomenon of bright or dark spots.
  • the present application also provides an organic light emitting diode display, which can be a top-emitting organic light-emitting diode display, a bottom-emitting organic light-emitting diode display, or a transparent organic light-emitting diode display.
  • the organic light emitting diode display is made by the above method.
  • the organic light emitting diode display includes a substrate, an anode, a hydrophilic layer, a patterned photoresist layer, and an organic functional layer.
  • the substrate has a light emitting area
  • the anode is located on the substrate
  • the hydrophilic layer covers the substrate and the anode outside the light emitting area
  • the patterned photoresist layer covers the hydrophilic layer and has an opening above the anode to define the light emitting area of the substrate.
  • the organic functional layer is located on the anode of the light-emitting area.
  • the organic functional layer is formed by forming a hydrophilic layer on the anode and the substrate, forming a photoresist layer on the hydrophilic layer, patterning the photoresist layer to form an opening above the anode, and removing the inside of the opening
  • the hydrophilic layer is formed by forming ink droplets on the anode in the opening and evaporating the solvent in the ink droplets.
  • the ink droplets include a solvent and an organic functional layer dissolved in the solvent.
  • the organic functional layer is an organic light-emitting layer, it can avoid the problem of uneven luminescence of the organic light-emitting diode display during display, that is, the mura phenomenon of bright or dark spots.
  • the organic light emitting diode display may also include a cathode, an electron transport layer, an electrode injection layer, and the like.
  • the organic light-emitting diode display of the present application has good spreadability of the ink droplets forming the organic functional layer on the anode of the light-emitting area during its manufacturing process, so that the organic functional layer has good spreadability in the light-emitting area and avoids undesirable phenomena in the organic light-emitting diode display.
  • the organic functional layer is an organic light-emitting layer, the problem of uneven light emission during display of the organic light-emitting diode display can be avoided.

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
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Abstract

本申请提供一种有机发光二极管显示器及其制造方法，通过在阳极上形成亲水层，再形成图案化光阻层以在阳极上方形成开口而定义发光区，去除发光区的亲水层以除去附着在亲水层上的残留光阻以及杂质颗粒。

Description

有机发光二极管显示器及其制造方法 技术领域
本申请涉及显示技术领域，尤其涉及一种有机发光二极管显示器及其制造方法。
 背景技术
有机发光二极管(Organic Light Emitting Diode，OLED)以其良好的自发光特性、高对比度以及快速响应等优势，在显示领域、照明领域以及智能穿戴领域等都得到了广泛的应用。
目前，制备OLED器件的主要方法有蒸镀法和喷墨打印法两种。利用全蒸镀方法以制备大中小尺寸的OLED显示器件相对于喷墨打印而言已相当成熟，其已经用于商业化生产。然而，全蒸镀方法由于材料利用率低导致其难以用于制备高分辨率的OLED器件。喷墨打印技术制备OLED器件的材料利用率高达90%以上且其制备OLED器件的成本较全蒸镀技术低17%左右。喷墨打印过程中无需掩模板使其可用于高分辨率显示器件的制备，故采用喷墨打印以制备出大尺寸、高分辨率的OLED器件是显示领域的研究热点。
在氧化铟锡（Indium Tin Oxide，ITO）图形化后制备图案化光阻（bank）以定义发光区。图案化光阻是通过曝光光阻层的部分区域并用显影液显影以于光阻层上形成开口，该开口位于阳极上方以定义发光区。由于曝光光阻层并显影后，ITO图形上会附着残留光阻以及微米级的异物颗粒，通过喷墨打印以在ITO图形表面形成有机功能层的过程中，如图1所示，ITO表面由于有残留光阻而导致墨滴11不能均匀铺展在发光区的ITO图案10上，且个别像素（pixel）内有微米级的异物颗粒。干燥后的有机功能膜层出现残留光阻处和异物处无功能膜覆盖会导致OLED显示器件显示异常。
因此，有必要提出一种技术方案以解决由于ITO图案上有残留光阻以及异物导致形成于ITO图案上的墨滴不能均匀铺展而引起OLED显示器件显示异常的问题。
 技术问题
本申请的目的在于提供一种有机发光二极管显示器及其制造方法，以解决ITO图案上有残留光阻以及异物导致形成于ITO图案上的墨滴不能均匀铺展而引起OLED显示器件显示异常的问题。该有机发光二极管显示器中的有机功能层在发光区铺展性好，避免有机发光二极管显示器出现不良显示现象。
 技术解决方案
一种有机发光二极管显示器的制造方法，所述制造方法包括如下步骤：
提供一基板，所述基板具有发光区；
于所述基板上形成阳极；
形成覆盖所述阳极和所述基板的亲水层；
形成覆盖所述亲水层的光阻层，所述光阻层经过图案化后以于所述阳极上方定义出所述基板的所述发光区；
去除所述发光区的所述亲水层；
于所述发光区的所述阳极上形成墨滴，所述墨滴包括溶剂和溶解于所述溶剂中的有机功能材料；
蒸发所述墨滴中的所述溶剂以于所述发光区的所述阳极上形成有机功能层。
在上述有机发光二极管显示器的制造方法中，所述亲水层的制备材料为亲水性二氧化硅、氧化铟锡、亲水性聚氨酯、亲水性丙烯酸酯以及亲水性环氧树脂中的任意一种。
在上述有机发光二极管显示器的制造方法中，所述亲水层的制备材料为亲水性二氧化硅。
在上述有机发光二极管显示器的制造方法中，所述去除所述发光区的所述亲水层包括如下步骤：采用干法刻蚀或湿法刻蚀以去除所述发光区的所述亲水层。
在上述有机发光二极管显示器的制造方法中，所述亲水层的厚度为2纳米-10微米。
在上述有机发光二极管显示器的制造方法中，所述于所述发光区的所述阳极上形成墨滴包括如下步骤：通过喷涂于所述发光区的所述阳极上形成墨滴。
在上述有机发光二极管显示器的制造方法中，所述有机功能材料为空穴传输材料、空穴注入材料或有机发光材料中的任意一种。
在上述有机发光二极管显示器的制造方法中，所述有机功能层为有机发光层。
在上述有机发光二极管显示器的制造方法中，所述阳极为氧化铟锡层或氧化铟锌层。
一种有机发光二极管显示器，所述有机发光二极管显示器包括：
一基板，所述基板具有发光区；
一阳极，所述阳极位于所述基板上；
一亲水层，所述亲水层覆盖所述基板以及所述发光区外的所述阳极；
一图案化光阻层，所述图案化光阻层覆盖所述亲水层且在所述阳极上方具有开口以定义所述基板的所述发光区，
一有机功能层，所述有机功能层位于所述发光区的所述阳极上，所述有机功能层是通过于所述阳极和所述基板上形成亲水层，于所述亲水层上形成光阻层，图案化所述光阻以图案化所述光阻层使所述阳极上方形成所述开口，去除所述开口内的所述亲水层，于所述开口内的所述阳极上形成墨滴并蒸发所述墨滴中的溶剂形成，所述墨滴包括所述溶剂和溶解于所述溶剂中的有机功能材料。
在上述有机发光二极管显示器中，所述有机功能层为有机发光层。
在上述有机发光二极管显示器中，所述亲水层的制备材料为亲水性二氧化硅、氧化铟锡、亲水性聚氨酯、亲水性丙烯酸酯以及亲水性环氧树脂中的至少一种。
在上述有机发光二极管显示器中，所述亲水层的制备材料为亲水性二氧化硅。
在上述有机发光二极管显示器中，通过干法刻蚀或湿法刻蚀以去除所述开口内的所述亲水层。
在上述有机发光二极管显示器中，所述亲水层的厚度为2纳米-10微米。
在上述有机发光二极管显示器中，通过喷涂于所述开口内的所述阳极上形成墨滴。
在上述有机发光二极管显示器中，所述有机功能材料为空穴传输材料、空穴注入材料或有机发光材料中的任意一种。
在上述有机发光二极管显示器中，所述阳极为氧化铟锡层或氧化铟锌层。
 有益效果
本申请提供一种有机发光二极管显示器及其制造方法，通过在阳极上形成亲水层，再形成图案化光阻层以在阳极上方形成开口而定义发光区，去除发光区的亲水层以除去附着在亲水层上的残留光阻以及杂质颗粒，避免残留光阻以及杂质颗粒导致墨滴在发光区的阳极上铺展不均匀而使得干燥后的有机功能膜层不能完全覆盖发光区的阳极，从而影响有机发光二极管显示器的显示效果。有机功能层为有机发光层时，能避免有机发光二极管显示器在显示时出现发光不均的问题。
 附图说明
图1为传统技术中有机功能层在发光区ITO图案上的结构示意图；
图2为本申请一实施例有机发光二极管显示器的制造方法的流程图；
图3A-3G为图2所示流程图制造过程中的结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
请参阅图2，其为本申请一实施例有机发光二极管显示器的制造方法的流程图。该有机发光二极管显示器的制造方法包括如下步骤：
S20:如图3A所示，提供一基板20。
基板20可以为玻璃基板以及柔性基板。柔性基板的制备材料包括但不限于聚酰亚胺以及聚对苯二甲酸乙二醇酯等。基板20也可以为薄膜晶体管阵列基板，薄膜晶体管阵列基板包括衬底以及设置于衬底上阵列排布的薄膜晶体管。薄膜晶体管可以为单晶硅薄膜晶体管、多晶硅薄膜晶体管或金属氧化物薄膜晶体管。薄膜晶体管阵列基板还可以包括钝化层以及平坦化层。钝化层用于阻挡离子进入薄膜晶体以避免离子影响薄膜晶体管的电性。平坦化层用于使薄膜晶体管阵列基板的表面更加平整。
S21:如图3B所示，于基板20上形成阳极21。
具体地，于基板20上形成整面的导电层，在导电层上涂布光刻胶，对光刻胶进行曝光后，再用显影液处理光刻胶以移除部分光刻胶，采用刻蚀工艺以去除未被光刻胶覆盖的导电层，再移除剩余的光刻胶而形成阳极。导电层可以为单层，也可以为多层。
阳极为透明电极时，阳极可以为氧化铟锡层或氧化铟锌层。阳极为反射电极或半透明电极时，其也可以为氧化铟锡层以及金属层的叠层。
S22:如图3C所示，形成覆盖阳极21和基板20的亲水层22。
具体地，采用化学气相沉积工艺、溅射工艺、印刷工艺、涂布工艺、真空蒸镀工艺以及原子层沉积工艺中的一种以于阳极21和基板20上形成亲水层22。
亲水层22可以为无机亲水层，例如亲水层22的制备材料为亲水性二氧化硅以及氧化铟锡。亲水层22也可以为有机亲水层，例如亲水层22的制备材料为亲水性聚氨酯、亲水性丙烯酸酯或亲水性环氧树脂。亲水层22也可以为无机亲水层和无机亲水层的叠层。亲水层22的厚度为2纳米-10微米。亲水层22为亲水性二氧化硅时，有利于使亲水层22的厚度较薄且能与基板20具有较好的附着力。
S23：形成覆盖亲水层22的光阻层，光阻层经过图案化以于阳极21上方定义出基板20的发光区，如图3D所示。
具体地，通过涂布以于步骤S22中形成的亲水层22上形成整面的光阻层，使用掩膜版对整面光阻层的部分区域曝光，再用显影液处理曝光后的光阻层以进行显影，使部分区域的光阻移除而形成开口200a，该开口200a位于阳极21上方，该开口200a定义基板20的发光区，图案化光阻层23覆盖开口200a之外的亲水层22。该开口200a的尺寸为（200±20）微米×（75±5）微米（长×宽）。
光阻层为光刻胶。光刻胶主要由树脂、感光剂、溶剂以及添加剂组成。树脂为粘合剂，感光剂是一种光活性极强的化合物。根据组成以及曝光时发生的反应不同，光刻胶可以分为负性光阻和正性光阻。负性光阻的曝光部分会产生交联，交联的部分不溶于显影液，负性光阻未曝光的部分溶于显影液。正性光阻的曝光部分会离解成溶于显影液的物质，而未曝光的部分不溶解于显影液。
S24：如图3E所示，去除发光区的亲水层22。
具体地，采用干法蚀刻或湿法蚀刻以去除发光区（开口200a中）的亲水层22。在去除发光区的亲水层22的过程中，由于形成图案化光阻而在发光区的亲水层22上附着的残留光阻也会去除，其他附着于发光区的亲水层22上的杂质颗粒也会随着发光区的亲水层22的去除而移除。
S25:如图3F所示，于发光区的阳极21上形成墨滴24。
具体地，通过喷涂于发光区的阳极21上形成墨滴24。喷涂包括喷墨打印。由于通过步骤S24将残留于发光区的光阻以及其他杂质颗粒移除，且亲水层22不会影响墨滴24的在发光区的阳极21上的铺展，故墨滴24能均匀地铺展于发光区的阳极21上。
墨滴24包括溶剂和溶解于溶剂中的有机功能材料。有机功能材料为空穴传输材料、空穴传输材料或有机发光材料中的一种。溶剂为有机溶剂。空穴传输材料以及空穴注入材料有利于空穴注入至有机发光层中。有机发光材料在空穴与电子复合时受激发而发出可见光。
S26:如图3G所示，蒸发墨滴24中的溶剂以于发光区的阳极21上形成有机功能层25。
具体地，通过真空干燥等方法以去除墨滴24中的溶剂以形成有机功能层25。有机功能层25可以为空穴传输层、空穴注入层以及有机发光层中的一种。由于墨滴24能均匀地铺展于发光区的阳极21上，使得有机功能层25能铺展于整个发光区的阳极21上。有机功能层25为有机发光层时，能避免有机发光二极管显示器在显示时出现发光不均问题，即出现亮点或暗点的mura现象。
本申请还提供一种有机发光二极管显示器，该有机发光二极管显示器可以顶发光型有机发光二极管显示器，也可以为底发光型有机发光二极管显示器，也可以为透明型有机发光二极管显示器。有机发光二极管显示器是通过上述方法制得。
有机发光二极管显示器包括基板、阳极、亲水层、图案化光阻层以及有机功能层。其中，基板具有发光区，阳极位于基板上，亲水层覆盖基板以及发光区外的阳极，图案化光阻层覆盖亲水层且在阳极上方具有开口以定义基板的发光区。有机功能层位于发光区的阳极上，有机功能层是通过于阳极和基板上形成亲水层，于亲水层上形成光阻层，图案化光阻层以在阳极上方形成开口，去除开口内的亲水层，于开口内的阳极上形成墨滴并蒸发墨滴中的溶剂形成，墨滴包括溶剂以及溶解于溶剂中的有机功能层。
有机功能层为有机发光层时，能避免有机发光二极管显示器在显示时出现发光不均的问题，即出现亮点或暗点的mura现象。
有机发光二极管显示器还可以包括阴极、电子传输层以及电极注入层等。
本申请有机发光二极管显示器由于在其制造过程中形成有机功能层的墨滴在发光区的阳极上的铺展性好，使得有机功能层在发光区铺展性好，避免有机发光二极管显示器出现不良现象。有机功能层为有机发光层时，能避免有机发光二极管显示器在显示时出现发光不均的问题。
以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (18)

  1. 一种有机发光二极管显示器的制造方法，其中，所述制造方法包括如下步骤：
    提供一基板，所述基板具有发光区；
    于所述基板上形成阳极；
    形成覆盖所述阳极和所述基板的亲水层；
    形成覆盖所述亲水层的光阻层，所述光阻层经过图案化以于所述阳极上方定义出所述基板的所述发光区；
    去除所述发光区的所述亲水层；
    于所述发光区的所述阳极上形成墨滴，所述墨滴包括溶剂和溶解于所述溶剂中的有机功能材料；
    蒸发所述墨滴中的所述溶剂以于所述发光区的所述阳极上形成有机功能层。
  2. 根据权利要求1所述的有机发光二极管显示器的制造方法，其中，所述亲水层的制备材料为亲水性二氧化硅、氧化铟锡、亲水性聚氨酯、亲水性丙烯酸酯以及亲水性环氧树脂中的至少一种。
  3. 根据权利要求1所述的有机发光二极管显示器的制造方法，其中，所述亲水层的制备材料为亲水性二氧化硅。
  4. 根据权利要求1所述的有机发光二极管显示器的制造方法，其中，所述去除所述发光区的所述亲水层包括如下步骤：采用干法刻蚀或湿法刻蚀以去除所述发光区的所述亲水层。
  5. 根据权利要求1所述的有机发光二极管显示器的制造方法，其中，所述亲水层的厚度为2纳米-10微米。
  6. 根据权利要求1所述的有机发光二极管显示器的制造方法，其中，所述于所述发光区的所述阳极上形成墨滴包括如下步骤：通过喷涂于所述发光区的所述阳极上形成墨滴。
  7. 根据权利要求1所述的有机发光二极管显示器的制造方法，其中，所述有机功能材料为空穴传输材料、空穴注入材料或有机发光材料中的任意一种。
  8. 根据权利要求1所述的有机发光二极管显示器的制造方法，其中，所述有机功能层为有机发光层。
  9. 根据权利要求1所述的有机发光二极管显示器的制造方法，其中，所述阳极为氧化铟锡层或氧化铟锌层。
  10. 一种有机发光二极管显示器，其中，所述有机发光二极管显示器包括：
    一基板，所述基板具有发光区；
    一阳极，所述阳极位于所述基板上；
    一亲水层，所述亲水层覆盖所述基板以及所述发光区外的所述阳极；
    一图案化光阻层，所述图案化光阻层覆盖所述亲水层且在所述阳极上方具有开口以定义所述基板的所述发光区，
    一有机功能层，所述有机功能层位于所述发光区的所述阳极上，所述有机功能层是通过于所述阳极和所述基板上形成亲水层，于所述亲水层上形成光阻层，图案化所述光阻层使所述阳极上方形成所述开口，去除所述开口内的所述亲水层，于所述开口内的所述阳极上形成墨滴并蒸发所述墨滴中的溶剂形成，所述墨滴包括所述溶剂和溶解于所述溶剂中的有机功能材料。
  11. 根据权利要求10所述的有机发光二极管显示器，其中，所述有机功能层为有机发光层。
  12. 根据权利要求10所述的有机发光二极管显示器，其中，所述亲水层的制备材料为亲水性二氧化硅、氧化铟锡、亲水性聚氨酯、亲水性丙烯酸酯以及亲水性环氧树脂中的至少一种。
  13. 根据权利要求10所述的有机发光二极管显示器，其中，所述亲水层的制备材料为亲水性二氧化硅。
  14. 根据权利要求10所述的有机发光二极管显示器，其中，通过干法刻蚀或湿法刻蚀以去除所述开口内的所述亲水层。
  15. 根据权利要求10所述的有机发光二极管显示器，其中，所述亲水层的厚度为2纳米-10微米。
  16. 根据权利要求10所述的有机发光二极管显示器，其中，通过喷涂于所述开口内的所述阳极上形成墨滴。
  17. 根据权利要求10所述的有机发光二极管显示器，其中，所述有机功能材料为空穴传输材料、空穴注入材料或有机发光材料中的任意一种。
  18. 根据权利要求10所述的有机发光二极管显示器，其中，所述阳极为氧化铟锡层或氧化铟锌层。
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