WO2020201799A1 - Power conversion device - Google Patents

Power conversion device Download PDF

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Publication number
WO2020201799A1
WO2020201799A1 PCT/IB2019/000407 IB2019000407W WO2020201799A1 WO 2020201799 A1 WO2020201799 A1 WO 2020201799A1 IB 2019000407 W IB2019000407 W IB 2019000407W WO 2020201799 A1 WO2020201799 A1 WO 2020201799A1
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WO
WIPO (PCT)
Prior art keywords
power
housing
base portion
conversion device
smoothing capacitor
Prior art date
Application number
PCT/IB2019/000407
Other languages
French (fr)
Japanese (ja)
Inventor
熊倉晋
高橋礼
石井聡一
Original Assignee
日産自動車株式会社
ルノー エス. ア. エス.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日産自動車株式会社, ルノー エス. ア. エス. filed Critical 日産自動車株式会社
Priority to PCT/IB2019/000407 priority Critical patent/WO2020201799A1/en
Publication of WO2020201799A1 publication Critical patent/WO2020201799A1/en

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    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • the present invention relates to a power conversion device.
  • JP2007-195292A discloses a power conversion device having a semiconductor module (high power component) constituting a main circuit for power conversion, a capacitor, a drive circuit, a control circuit, and a metal housing accommodating them. ing.
  • the alternating current converted by the semiconductor module is transmitted to the external connection terminal via the module terminal and the alternating current bus bar (conductor portion).
  • an object of the present invention is to provide a power conversion device capable of saving space while ensuring insulation between a conductor portion connected to a high-power component and a housing.
  • a high-power component a housing for accommodating the high-power component, a conductor portion whose one end is connected to the high-power component, and a high-power terminal installed on the high-power component and fixing the conductor portion to the high-power component.
  • a power converter which comprises.
  • the housing is composed of a base portion formed of a resin material and on which a high electric component is placed, and a cover portion formed of a metal material and attached to the base portion so as to cover the high electric component.
  • a part of the high-power terminal installed on the high-power component is in close proximity to or in contact with the base of the housing.
  • FIG. 1 is a schematic cross-sectional view of the power conversion device according to the first embodiment.
  • FIG. 2 is a schematic cross-sectional view of the power conversion device according to the second embodiment.
  • FIG. 3 is a schematic cross-sectional view of the power conversion device according to the third embodiment.
  • FIG. 1 is a schematic cross-sectional view of the power conversion device according to the first embodiment.
  • the power conversion device 100 is composed of a power semiconductor module (high power component) 1, a control board (light power component) 2, a smoothing capacitor module (high power component) 3, and a housing 4, and is mounted on a vehicle or the like. Will be done.
  • the power semiconductor module 1, the control board 2, and the smoothing capacitor module 3 are housed in the housing 4.
  • the power semiconductor module 1 and the control board 2 are electrically connected, and the power semiconductor module 1 and the smoothing capacitor module 3 are electrically connected by a high electric line 10 (first conductor portion).
  • the power semiconductor module 1 is electrically connected to an electric component (not shown) such as a motor outside the housing by a high electric line 20 (second conductor portion).
  • the smoothing capacitor module 3 is electrically connected to a power source (not shown) such as a battery outside the housing 4 via a high electric connector 301 by a high electric line 30 (second conductor portion).
  • the control board 2 is connected to an external controller (not shown) of the housing 4 via a light electric connector 401 by a light electric line 40.
  • the power semiconductor module 1 is a circuit having a function of converting electric power into direct current or alternating current, and is a high-power component composed of a plurality of electric components including a semiconductor element.
  • the power semiconductor module 1 is electrically connected to the control board 2 and is also electrically connected to the smoothing capacitor module 3 via the high electric line 10.
  • the high-power line 10 is fixed to the power semiconductor module 1 by a bolt or the like at a conductive high-power terminal 11 provided in the power semiconductor module 1. Further, the power semiconductor module 1 is electrically connected to an electric component outside the housing 4 via a high power line 20.
  • the high-power line 20 is fixed to the power semiconductor module 1 by a bolt or the like at a conductive high-power terminal 12 provided in the power semiconductor module 1.
  • the control board 2 is a circuit that controls the power semiconductor module 1.
  • the control board 2 is a light electric component that is arranged above the power semiconductor module 1 and is electrically connected to the power semiconductor module 1. Further, the control board 2 is electrically connected to an external controller or the like of the housing 4 via the light electric connector 401 by the light electric line 40.
  • the number of light electric lines 40 is not particularly limited, and any number of light electric lines 40 may be provided.
  • the smoothing capacitor module 3 is a high-power component containing a capacitor element, and the capacitor element is housed in a resin case 31.
  • the smoothing capacitor module 3 is arranged between the power semiconductor module 1 and the high-power connector 301 installed on the side surface of the housing 4 so as to be substantially horizontal to the power semiconductor module 1.
  • the smoothing capacitor module 3 is electrically connected to the power semiconductor module 1 via the high power line 10 and absorbs a steep voltage fluctuation generated in the DC current line due to the switching of the power semiconductor module 1 to stabilize the voltage level. Further, the smoothing capacitor module 3 is electrically connected to the power supply outside the housing by the high power line 30 via the high power connector 301.
  • the bus bars 32a and 32b integrated with the capacitor element are pulled out from the bottom surface 311 of the resin case 31, the bus bar 32a is electrically connected to the high electric line 10, and the bus bar 32b is electrically connected to the high electric line 30.
  • the high-power lines 10 and 30 are connected to the bus bars 32a and 32b by the terminal members (bolts, etc.) of the conductive high-power terminals 22 and 23 provided on the bottom surface of the smoothing capacitor module 3 and fixed to the smoothing capacitor module 3. ..
  • the housing 4 includes a base portion 41 on which the power semiconductor module 1 and the smoothing capacitor module 3 are placed, a cover portion 42 attached to the base portion 41 so as to cover the power semiconductor module 1 and the smoothing capacitor module 3, and a base portion 41. It is composed of a thin plate 43 which is provided on the lower surface 412 of the above and functions as a bottom plate of the cover portion 42.
  • the base portion 41 is formed as a plate-like member by, for example, an electrically insulating resin material such as polyamide (PA) or polyphenylene sulfide (PPS), and the power semiconductor module 1 and the smoothing capacitor module 3 are mounted on the mounting surface 411.
  • the lower surface 412 of the base portion 41 is provided with a thin metal plate 43 made of aluminum or the like, which is larger than the outer shape of the lower surface 412.
  • the thin plate 43 is provided with an opening 431 for pulling out the high electric line 20 to the outside of the housing 4.
  • the base portion 41 is formed with a protruding portion 413 through which the opening 431 of the thin plate 43 is inserted.
  • the protruding portion 413 projects downward from the lower surface 412 of the base portion 41.
  • the protruding portion 413 has a through hole 414 that penetrates the base portion 41 in the vertical direction.
  • the high-power line 20 is drawn out of the housing 4 through the through hole 414 and electrically connected to an external electric component.
  • the cover portion 42 is formed of an aluminum-based metal material such as ADC 10 or ADC 12, and is attached to the base portion 41 so as to cover the periphery of the power semiconductor module 1, the control board 2, and the smoothing capacitor module 3.
  • the cover portion 42 is composed of an upper wall 421 and a side wall 422, and a high electric connector insertion port 423 into which a high electric connector 301 connected to the high electric line 30 is inserted is formed in the side wall 422. Further, a step portion 424 having an end surface that abuts on the mounting surface 411 of the base portion 41 is formed on the inner portion of the side wall 422.
  • the tip surface 425 of the side wall 422 abuts on the outer peripheral edge 432 of the thin plate 43 provided on the lower surface 412 of the base portion 41.
  • the cover portion 42, the base portion 41, and the thin plate 43 are fastened together by bolts or the like from the outside of the thin plate 43 at a portion where the step portion 424 of the cover portion 42 and the mounting surface 411 of the base portion 41 come into contact with each other.
  • the electromagnetic shielding property of the power conversion device 100 can be enhanced by completely covering the power semiconductor module 1 and the smoothing capacitor module 3 with the cover portion 42 and the thin plate 43 formed of the metal material.
  • the high-power lines 10, 20, and 30 are metal bus bars with good conductivity such as oxygen-free copper. As described above, the high power line 10 electrically connects the smoothing capacitor module 3 and the power semiconductor module 1. Further, the high power line 20 electrically connects the power semiconductor module 1 and the external electric components of the housing 4, and the high power line 30 electrically connects the smoothing capacitor module 3 and the external power supply of the housing 4. ..
  • the high-power lines 10 and 30 is electrically connected to the bus bars 32a and 32b integrated with the capacitor element inside the smoothing capacitor module 3.
  • the bus bars 32a and 32b are pulled out from the bottom surface 311 of the resin case 31 that houses the capacitor element to the outside of the resin case 31.
  • the high-power line 10 is connected to the bus bar 32a by a high-power terminal member such as a bolt at the high-power terminal 22 provided on the bottom surface of the smoothing capacitor module 3 and is fixed to the smoothing capacitor module 3.
  • the high power line 30 is connected to the bus bar 32b by a high power terminal member such as a bolt at the high power terminal 23 provided on the bottom surface of the smoothing capacitor module 3 and is fixed to the smoothing capacitor module 3.
  • the high-power line 10 extends from the high-power terminal 22 toward the outside of the smoothing capacitor module 3 along the surface of the base portion 41.
  • the high-power line 10 is bent in a crank shape in the middle portion after stretching, and the other end of the high-power line 10 is connected to the power semiconductor module 1. Further, the high power line 10 is fixed to the power semiconductor module 1 by a bolt or the like at a high power terminal 11 provided in the power semiconductor module 1 before being connected to the power semiconductor module 1.
  • the high-power line 30 extends from the high-power terminal 23 toward the outside of the smoothing capacitor module 3 along the surface of the base portion 41.
  • the high-power line 30 is bent in a crank shape in the middle portion after stretching, and the other end of the high-power line 30 is connected to the high-power connector 301 inserted into the high-power connector insertion port 423 of the housing 4.
  • the high-power line 30 is further electrically connected to an external power source of the housing 4 via the high-power connector 301.
  • One end of the high power line 20 is connected to the power semiconductor module 1, and the other end is connected to an electric component such as a motor outside the housing 4.
  • the high power line 20 is fixed to the power semiconductor module 1 by a bolt or the like at a high power terminal 12 provided on the power semiconductor module 1 before being connected to the power semiconductor module 1. Further, the high electric line 20 is bent in the direction of the base portion 41 of the housing 4, and is drawn out to the outside of the housing 4 through the through hole 414 of the base portion 41 as described above, and is electrically supplied to the external electric components. Connect to.
  • the high-power line 20 is drawn out from the base portion 41 made of an insulating resin material in this way, the heat insulating property between the high-power line 20 and the housing 4 is ensured.
  • the high electric terminals 22 and 23 are composed of conductive members.
  • the high-power terminal 22 fixes the high-power line 10 to the smoothing capacitor module 3 by the high-power terminal member, and the high-power terminal 23 fixes the high-power line 30 to the smoothing capacitor module 3 by the high-power terminal member.
  • the high-power terminal 22 is installed in the smoothing capacitor module 3 so that the top surface 221 is in contact with the bottom surface 311 of the resin case 31 in the smoothing capacitor module 3, and the high-power line 10 and the bus bar 32a are sandwiched between the top surface 221 and the bottom surface 222.
  • the high-power terminal 22, the high-power line 10, the bus bar 32a, and the smoothing capacitor module 3 are fastened by a high-power terminal member such as a bolt.
  • the high electric line 10 is fixed to the smoothing capacitor module 3 and electrically connected to the bus bar 32a.
  • the bottom surface 222 of the high power terminal 22 faces the base portion 41 of the housing 4 and is close to the base portion 41.
  • the high electric terminal 23 is installed in the smoothing capacitor module 3 so that the upper surface 231 is in contact with the bottom surface 311 of the resin case 31 in the smoothing capacitor module 3, and the high electric line 30 and the bus bar 32b are sandwiched between the upper surface 231 and the bottom surface 232. It is provided as follows.
  • the high power terminal 23, the high power line 30, the bus bar 32b, and the smoothing capacitor module 3 are fastened by a high power terminal member such as a bolt.
  • the high electric line 30 is fixed to the smoothing capacitor module 3 and electrically connected to the bus bar 32b.
  • the bottom surface 232 of the high power terminal 23 faces the base portion 41 of the housing 4 and is close to the base portion 41.
  • the base portion 41 is made of an insulating resin material, the high-power terminals 22 and 23 and the high-power terminals 22 and 23 The insulation between the high-voltage lines 10 and 30 fixed by the above and the housing 4 is ensured.
  • the bottom surfaces 222 and 232 of the high-power terminals 22 and 23 may be in contact with the base portion 41 of the housing 4.
  • the area of the portion where the bottom surfaces 222 and 232 of the high-power terminals 22 and 23 and the base portion 41 of the housing 4 are in close contact with each other is not particularly limited, and is appropriately determined in consideration of the arrangement of parts in the housing 4. can do.
  • the high electric lines 10 and 30 may be arranged together with the high electric terminals 22 and 23 so as to have a portion close to or in contact with the base portion 41. Even if the high-voltage lines 10 and 30 are brought close to or in contact with the base portion 41 in this way, the insulation between the high-voltage lines 10 and 30 and the housing 4 is high because the base portion 41 is made of an insulating resin material. To be secured.
  • the housing 4 comprises a resin material base 41 on which the power semiconductor module 1 (high power component) and the smoothing capacitor module 3 (high power component) are placed, and the power semiconductor module 1 and the smoothing capacitor module 3. It is composed of a metal cover portion 42 attached to the base portion 41 so as to cover the base portion 41. Further, the power conversion device 100 includes high power terminals 22 and 23 for fixing the high power lines 10 and 30 (conductor portion) whose one end is connected to the smoothing capacitor module 3 to the smoothing capacitor module 3. Then, a part of the high power terminals 22 and 23 comes into close contact with or comes into contact with the base portion 41 of the housing 4.
  • the high-power terminals 22 and 23 are arranged so as to be close to or in contact with the base portion 41, since the base portion 41 is made of an insulating resin material, the high-power terminals 22 and 23 and the high-power terminals 22 The insulation between the high electric lines 10 and 30 fixed by 23 and 23 and the housing 4 is ensured. Further, since it is not necessary to take a large space between the high electric lines 10 and 30 and the housing 4 for ensuring electrical insulation, space saving is possible. Therefore, it is possible to provide a power conversion device capable of saving space while ensuring the insulation between the high power lines 10 and 30 connected to the smoothing capacitor module 3 and the housing 4.
  • the power conversion device 100 includes a high power line 10 (first conductor portion) connecting the power semiconductor module 1 (high power component) and the smoothing capacitor module 3 (high power component), and the smoothing capacitor module 3 and the housing 4. It has a high power line 30 (second conductor portion) for connecting to an external power source.
  • the high-power lines 10 and 30 have a portion that is close to or in contact with the base portion 41 of the housing 4. Even if the high-power lines 10 and 30 are arranged so as to be close to or in contact with the base portion 41 in this way, since the base portion 41 is made of an insulating resin material, the high-power lines 10 and 30 and the housing 4 Insulation is ensured.
  • the power conversion device 100 has a high power line 20 (second conductor portion) for connecting the power semiconductor module 1 (high power component) and an external electric component of the housing 4, and the high power line 20 starts from the base portion 41. It is pulled out to the outside of the housing 4. Since the high-power line 20 is pulled out from the base portion 41 formed of the insulating resin material to the outside of the housing 4, the heat insulating property between the high-power line 20 and the housing 4 is ensured. Further, since it is not necessary to take a large space between the high electric line 20 and the housing 4 to secure electrical insulation, the space can be saved as compared with the case where the high electric line is pulled out from the metal housing. .. Therefore, it is possible to provide a power conversion device capable of further saving space while ensuring the insulation between the high power line 20 connected to the power semiconductor module 1 and the housing 4.
  • each high-power line is not particularly limited, and any number may be provided. Further, the number of high-power terminals is not limited, and may be appropriately provided according to the number of high-power lines.
  • the high electric line 20 is preferably pulled out from the base portion 41 to the outside of the housing 4, but is not necessarily limited to this, and may be connected to the outside from the side wall 422 of the housing 4 like the high electric line 30. ..
  • all of the high-power lines 10, 20, and 30 are close to or in contact with the base portion 41 of the housing 4, but this is not always the case.
  • only the high power line 10 may be in close proximity to or in contact with the base 41.
  • both the high electric terminal and the high electric line are close to or in contact with the base portion 41 of the housing 4, but the present invention is not limited to this, and for example, only the high electric terminal is the base portion 41. May be in close proximity to or in contact with.
  • the power conversion device 100 according to the second embodiment will be described with reference to FIG.
  • the same elements as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.
  • FIG. 2 is a schematic cross-sectional view of the power conversion device according to the second embodiment.
  • the present embodiment is different from the first embodiment in that the base portion 41 of the housing 4 has an extending portion 44 extending upward.
  • the base portion 41 of the housing 4 has an extension portion 44 extending upward from the end portion 415. Further, the extension portion 44 has a flange portion 442 extending outward from the tip 441 of the housing 4.
  • the side wall 422 of the cover portion 42 is formed with a stepped portion 426 having an end surface that abuts on the upper surface of the flange portion 442.
  • the tip surface 427 of the side wall 422 abuts on the outer peripheral edge 432 of the thin plate 43 provided on the lower surface 412 of the base portion 41.
  • the cover portion 42, the extension portion 44 of the base portion 41, and the thin plate 43 are jointly tightened from the outside of the thin plate 43 at a portion where the step portion 426 of the cover portion 42 and the tip surface 443 of the base portion 41 abut. It is concluded by.
  • the side wall 422 of the cover portion 42 and the extension portion 44 of the base portion 41 are integrated to form the side surface of the housing 4. That is, the extension portion 44 constitutes a part of the side surface of the housing 4.
  • the high electric line 20 connected to the power semiconductor module 1 is arranged in a state close to the extending portion 44 of the base portion 41, and is arranged from the through hole 414 of the base portion 41 to the housing 4 It is pulled out to the outside of. Even if the high-power line 20 is arranged in a state close to the extended portion 44 of the base portion 41 in this way, since the base portion 41 is formed of an insulating resin material, the high-power line 20 and the housing 4 Insulation is ensured.
  • the high electric line 20 may be in contact with the extension portion 44.
  • the high electric line 30 connected to the smoothing capacitor module 3 is arranged in a state close to the extending portion 44 of the base portion 41, connected to the high electric connector 301, and via the high electric connector 301. And electrically connect to an external power supply. Even if the high-power line 30 is arranged close to the extended portion 44 of the base portion 41 in this way, since the base portion 41 is formed of an insulating resin material, the high-power line 30 and the housing 4 Insulation is ensured. The high electric line 30 may be in contact with the extension portion 44.
  • the length of the portion where the high electric lines 20 and 30 are close to or in contact with the extended portion 44 of the base portion 41 is not particularly limited, and can be appropriately determined in consideration of the arrangement of parts in the housing 4. ..
  • the power conversion device 100 has an extension portion 44 in which a base portion 41 of the housing 4 made of a resin material extends upward from an end portion 415 and forms a part of a side surface of the housing 4. Further, the power semiconductor module 1 (high electric component) and the high electric line 20 (second conductor portion) connecting the external electric component of the housing 4 and the smoothing capacitor module 3 (high electric component) and the external power supply of the housing 4 are connected.
  • the high power line 30 (second conductor portion) to be connected is close to or in contact with the extension portion 44.
  • the base portion 41 is formed of an insulating resin material, so that the high-power lines 20 and 30
  • the insulation between the 30 and the housing 4 is ensured. That is, since it is not necessary to take a large space between the high electric lines 20 and 30 and the side surface of the housing 4 to secure electrical insulation, further space saving is possible and the device is downsized. To. Therefore, it is possible to provide a power conversion device capable of saving space while ensuring the insulation between the high electric lines 20 and 30 connected to the power semiconductor module 1 and the smoothing capacitor module 3 and the housing 4.
  • the power conversion device 100 according to the third embodiment will be described with reference to FIG.
  • the same elements as those of the other embodiments are designated by the same reference numerals, and the description thereof will be omitted.
  • FIG. 3 is a schematic cross-sectional view of the power conversion device 100 according to the third embodiment.
  • the base portion 41 includes a cooling passage 45 (refrigerant flow path) for cooling the power semiconductor module 1.
  • the base portion 41 includes a cooling passage 45 (refrigerant flow path) through which cooling water (refrigerant) for cooling the power semiconductor module 1 flows below the portion on which the power semiconductor module 1 is mounted. Further, the base portion 41 is provided with a recess 46 in the vicinity of the cooling passage 45.
  • the high electric line 10 connected to the bus bar 32a of the smoothing capacitor module 3 is bent and enters the recess 46.
  • the high electric line 10 is arranged so as to make a U-turn in the recess 46 and connect to the power semiconductor module 1.
  • the high electric line 10 is arranged so as to come into contact with the side surface of the base portion 41 in the recess 46 on the side close to the cooling passage 45. In this way, even if the high electric line 10 is arranged so as to be in contact with the base portion 41, since the base portion 41 is formed of an insulating material, the insulating property between the high electric line 10 and the housing 4 is high. To be secured. Further, since the high power line 10 is in contact with the base portion 41 in the recess 46 provided in the vicinity of the cooling passage 45, the smoothing capacitor module 3 connected to the high power line 10 and the high power line by the cooling water flowing through the cooling passage 45. The power semiconductor module 1 is cooled.
  • the high electric line 10 is in contact with the base portion 41, but the present invention is not limited to this, and the high electric line 10 may be arranged so as to be close to the base portion 41 in the vicinity of the cooling passage 45.
  • the high electric line 10 does not necessarily have to come into contact with the base portion 41 in the recess 46, and may come into contact with the base portion 41 anywhere in the vicinity of the cooling passage 45.
  • it may be arranged so as to come into contact with the base portion 41 at a position facing the cooling passage 45.
  • the base portion 41 of the power conversion device 100 includes a cooling passage 45 (refrigerant flow path) through which cooling water (refrigerant) for cooling the power semiconductor module 1 (high electric component) flows, and the high electric line 10 (conductor portion) is a cooling passage. It contacts the base portion 41 in the vicinity of 45. In this way, even if the high electric line 10 is arranged so as to be in contact with the base portion 41, since the base portion 41 is formed of an insulating material, the insulating property between the high electric line 10 and the housing 4 is high. To be secured.
  • the smoothing capacitor module 3 and the power semiconductor module 1 connected to the high electric line 10 and the high electric line are cooled by the cooling water flowing through the cooling path 45. Will be done. That is, it is possible to provide a power conversion device in which the cooling effect of the high power line 10, the smoothing capacitor module 3 and the power semiconductor module 1 is improved while ensuring the insulation between the high power line 10 and the housing 4.
  • the cooler can be miniaturized as the cooling effect is improved, and the entire device can be miniaturized.
  • the cooling path 45 is provided below the power semiconductor module 1, but the present invention is not limited to this, and the cooling passage 45 may be provided below the smoothing capacitor module 3, and the power semiconductor module 1 and the smoothing capacitor may be provided. One may be provided below each of the modules 3.
  • the high electric line 10 is brought into contact with the base portion 41 in the vicinity of the cooling path 45, but the high electric terminal 22 for fixing the high electric line 10 to the smoothing capacitor module 3 is provided in the vicinity of the cooling path 45. It may be in contact with or in close proximity to 41.
  • the refrigerant flowing through the cooling passage 45 is the cooling water, but the refrigerant is not limited to this, and may be, for example, a refrigerant gas.
  • the high-power components are the power semiconductor module 1 and the smoothing capacitor module 3, but the high-power components are not necessarily limited to these, and may be, for example, a DC / DC converter or the like.
  • the light electric component is the control board 2 for controlling the power semiconductor module 1, but the light electric component is not limited to this, and may be, for example, a motor control board or the like.
  • the mounting direction of the power conversion device 100 does not necessarily have to be arranged on the lower side of the base portion 41 of the housing 4, and is free depending on the layout of the vehicle on which the power conversion device 100 is mounted. It may be arranged in any direction.
  • the power conversion device 100 shown in FIG. 1 or the like may be installed upside down so that the base portion 41 is on the top and the cover portion 42 is on the bottom, or the power conversion device 100 may be installed in an inclined state. You may.

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  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

Provided is a power conversion device in which a housing comprises: a base unit which is formed of a resin material and in which a strong electric-field component is placed and held; and a cover unit which is formed of a metal material and which is attached to the base unit so as to cover the strong electric-field component. In the power conversion device, a strong electric-field terminal secures a conductor, which is to be connected to the strong electric-field component, to the strong electric-field component, and a section of the strong electric-field terminal approaches or contacts the base unit of the housing.

Description

電力変換装置Power converter
 本発明は、電力変換装置に関する。 The present invention relates to a power conversion device.
 JP2007−195292Aには、電力変換用の主回路を構成する半導体モジュール(強電部品)と、コンデンサと、駆動回路と、制御回路と、これらを収容する金属筐体とを有する電力変換装置が開示されている。この電力変換装置では、半導体モジュールで変換された交流電流は、モジュール端子や交流バスバー(導体部)を介して外部接続端子へ伝えられる。 JP2007-195292A discloses a power conversion device having a semiconductor module (high power component) constituting a main circuit for power conversion, a capacitor, a drive circuit, a control circuit, and a metal housing accommodating them. ing. In this power conversion device, the alternating current converted by the semiconductor module is transmitted to the external connection terminal via the module terminal and the alternating current bus bar (conductor portion).
 JP2007−195292Aに記載された電力変換装置では、半導体モジュール(強電部品)に接続されるモジュール端子や交流バスバー(導体部)と金属筐体との間には、電気的絶縁を確保するための適切な空間距離が必要となる。そのため、モジュール端子や交流バスバーと金属筐体の間に大きなスペースをとる必要があり、装置が大型化するという問題がある。 In the power conversion device described in JP2007-195292A, it is appropriate to ensure electrical insulation between the module terminal or AC bus bar (conductor portion) connected to the semiconductor module (high power component) and the metal housing. Space distance is required. Therefore, it is necessary to take a large space between the module terminal or the AC bus bar and the metal housing, and there is a problem that the device becomes large.
 本発明は、上記課題に鑑み、強電部品に接続する導体部と筐体との間の絶縁性を確保しつつ、省スペース化が可能な電力変換装置を提供することを目的とする。 In view of the above problems, an object of the present invention is to provide a power conversion device capable of saving space while ensuring insulation between a conductor portion connected to a high-power component and a housing.
 本発明の一態様によれば、強電部品と、強電部品を収容する筐体と、一端が強電部品に接続する導体部と、強電部品に設置されるとともに導体部を強電部品に固定する強電端子と、を備える電力変換装置、が提供される。筐体は、樹脂材料により形成されるとともに強電部品を載置するベース部と、金属材料により形成されるとともに強電部品を覆うようにベース部に取り付けられるカバー部と、から構成される。強電部品に設置された強電端子の一部は、筐体のベース部に近接または接触する。 According to one aspect of the present invention, a high-power component, a housing for accommodating the high-power component, a conductor portion whose one end is connected to the high-power component, and a high-power terminal installed on the high-power component and fixing the conductor portion to the high-power component. And a power converter, which comprises. The housing is composed of a base portion formed of a resin material and on which a high electric component is placed, and a cover portion formed of a metal material and attached to the base portion so as to cover the high electric component. A part of the high-power terminal installed on the high-power component is in close proximity to or in contact with the base of the housing.
図1は、第1実施形態による電力変換装置の断面模式図である。FIG. 1 is a schematic cross-sectional view of the power conversion device according to the first embodiment. 図2は、第2実施形態による電力変換装置の断面模式図である。FIG. 2 is a schematic cross-sectional view of the power conversion device according to the second embodiment. 図3は、第3実施形態による電力変換装置の断面模式図である。FIG. 3 is a schematic cross-sectional view of the power conversion device according to the third embodiment.
 以下、図面等を参照しながら、本発明の実施形態について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings and the like.
 (第1実施形態)
 図1を参照して、本発明の第1実施形態に係る電力変換装置100について説明する。
(First Embodiment)
The power conversion device 100 according to the first embodiment of the present invention will be described with reference to FIG.
 図1は、第1実施形態による電力変換装置の断面模式図である。 FIG. 1 is a schematic cross-sectional view of the power conversion device according to the first embodiment.
 図1に示すように、電力変換装置100は、パワー半導体モジュール(強電部品)1、制御基板(弱電部品)2、平滑コンデンサモジュール(強電部品)3、筐体4から構成され、車両等に搭載される。 As shown in FIG. 1, the power conversion device 100 is composed of a power semiconductor module (high power component) 1, a control board (light power component) 2, a smoothing capacitor module (high power component) 3, and a housing 4, and is mounted on a vehicle or the like. Will be done.
 パワー半導体モジュール1、制御基板2及び平滑コンデンサモジュール3は筐体4に収容される。パワー半導体モジュール1と制御基板2とは電気的に接続され、パワー半導体モジュール1と平滑コンデンサモジュール3とは強電ライン10(第1導体部)により電気的に接続される。また、パワー半導体モジュール1は、強電ライン20(第2導体部)により筐体外部のモータ等の電気部品(図示しない)に電気的に接続される。平滑コンデンサモジュール3は、強電ライン30(第2導体部)により強電コネクタ301を介して筐体4の外部のバッテリ等の電源(図示しない)に電気的に接続される。制御基板2は、弱電ライン40により弱電コネクタ401を介して筐体4の外部のコントローラ(図示しない)等に接続される。 The power semiconductor module 1, the control board 2, and the smoothing capacitor module 3 are housed in the housing 4. The power semiconductor module 1 and the control board 2 are electrically connected, and the power semiconductor module 1 and the smoothing capacitor module 3 are electrically connected by a high electric line 10 (first conductor portion). Further, the power semiconductor module 1 is electrically connected to an electric component (not shown) such as a motor outside the housing by a high electric line 20 (second conductor portion). The smoothing capacitor module 3 is electrically connected to a power source (not shown) such as a battery outside the housing 4 via a high electric connector 301 by a high electric line 30 (second conductor portion). The control board 2 is connected to an external controller (not shown) of the housing 4 via a light electric connector 401 by a light electric line 40.
 パワー半導体モジュール1は、電力を直流または交流に変換する機能を有する回路であり、半導体素子を含む複数の電気部品から構成される強電部品である。パワー半導体モジュール1は、制御基板2に電気的に接続するとともに、強電ライン10を介して平滑コンデンサモジュール3に電気的に接続する。強電ライン10は、パワー半導体モジュール1に設けられた導電性の強電端子11においてボルト等によりパワー半導体モジュール1に固定される。また、パワー半導体モジュール1は強電ライン20を介して筐体4の外部の電気部品に電気的に接続される。強電ライン20は、パワー半導体モジュール1に設けられた導電性の強電端子12においてボルト等によりパワー半導体モジュール1に固定される。 The power semiconductor module 1 is a circuit having a function of converting electric power into direct current or alternating current, and is a high-power component composed of a plurality of electric components including a semiconductor element. The power semiconductor module 1 is electrically connected to the control board 2 and is also electrically connected to the smoothing capacitor module 3 via the high electric line 10. The high-power line 10 is fixed to the power semiconductor module 1 by a bolt or the like at a conductive high-power terminal 11 provided in the power semiconductor module 1. Further, the power semiconductor module 1 is electrically connected to an electric component outside the housing 4 via a high power line 20. The high-power line 20 is fixed to the power semiconductor module 1 by a bolt or the like at a conductive high-power terminal 12 provided in the power semiconductor module 1.
 制御基板2は、パワー半導体モジュール1を制御する回路である。この制御基板2は、パワー半導体モジュール1の上方に配置され、パワー半導体モジュール1に電気的に接続される弱電部品である。また、制御基板2は弱電ライン40により弱電コネクタ401を介して筐体4の外部のコントローラ等に電気的に接続される。なお、弱電ライン40の本数は特に限定されず、何本設けてもよい。 The control board 2 is a circuit that controls the power semiconductor module 1. The control board 2 is a light electric component that is arranged above the power semiconductor module 1 and is electrically connected to the power semiconductor module 1. Further, the control board 2 is electrically connected to an external controller or the like of the housing 4 via the light electric connector 401 by the light electric line 40. The number of light electric lines 40 is not particularly limited, and any number of light electric lines 40 may be provided.
 平滑コンデンサモジュール3はコンデンサ素子を内蔵する強電部品であり、コンデンサ素子は樹脂ケース31に収納される。平滑コンデンサモジュール3は、パワー半導体モジュール1と筐体4の側面に設置された強電コネクタ301との間に、パワー半導体モジュール1と略水平方向に並んで配置される。平滑コンデンサモジュール3は強電ライン10を介してパワー半導体モジュール1に電気的に接続され、パワー半導体モジュール1のスイッチングに伴い直流電流ラインに生じる急峻な電圧変動を吸収し、電圧レベルを安定化する。また、平滑コンデンサモジュール3は強電ライン30により強電コネクタ301を介して筐体外部の電源に電気的に接続される。 The smoothing capacitor module 3 is a high-power component containing a capacitor element, and the capacitor element is housed in a resin case 31. The smoothing capacitor module 3 is arranged between the power semiconductor module 1 and the high-power connector 301 installed on the side surface of the housing 4 so as to be substantially horizontal to the power semiconductor module 1. The smoothing capacitor module 3 is electrically connected to the power semiconductor module 1 via the high power line 10 and absorbs a steep voltage fluctuation generated in the DC current line due to the switching of the power semiconductor module 1 to stabilize the voltage level. Further, the smoothing capacitor module 3 is electrically connected to the power supply outside the housing by the high power line 30 via the high power connector 301.
 また、平滑コンデンサモジュール3は、コンデンサ素子と一体化したバスバー32a,32bが樹脂ケース31の底面311から引き出され、バスバー32aは強電ライン10に、バスバー32bは強電ライン30に電気的に接続する。強電ライン10,30は、平滑コンデンサモジュール3の底面に設けられた導電性の強電端子22,23の端子部材(ボルト等)によってバスバー32a,32bに接続されるとともに平滑コンデンサモジュール3に固定される。 Further, in the smoothing capacitor module 3, the bus bars 32a and 32b integrated with the capacitor element are pulled out from the bottom surface 311 of the resin case 31, the bus bar 32a is electrically connected to the high electric line 10, and the bus bar 32b is electrically connected to the high electric line 30. The high- power lines 10 and 30 are connected to the bus bars 32a and 32b by the terminal members (bolts, etc.) of the conductive high- power terminals 22 and 23 provided on the bottom surface of the smoothing capacitor module 3 and fixed to the smoothing capacitor module 3. ..
 筐体4は、パワー半導体モジュール1及び平滑コンデンサモジュール3を載置するベース部41と、パワー半導体モジュール1及び平滑コンデンサモジュール3を覆うようにベース部41に取り付けられるカバー部42と、ベース部41の下面412に設けられ、カバー部42の底板として機能する薄板43から構成される。 The housing 4 includes a base portion 41 on which the power semiconductor module 1 and the smoothing capacitor module 3 are placed, a cover portion 42 attached to the base portion 41 so as to cover the power semiconductor module 1 and the smoothing capacitor module 3, and a base portion 41. It is composed of a thin plate 43 which is provided on the lower surface 412 of the above and functions as a bottom plate of the cover portion 42.
 ベース部41は、例えばポリアミド(PA)やポリフェニレンサルファイド(PPS)等の電気絶縁性の樹脂材料により板状部材として構成され、載置面411にパワー半導体モジュール1及び平滑コンデンサモジュール3を搭載する。ベース部41の下面412には、下面412の外形よりも大きいアルミニウム等からなる金属製の薄板43が設けられる。薄板43には強電ライン20を筐体4外部に引き出すための開口部431が設けられる。 The base portion 41 is formed as a plate-like member by, for example, an electrically insulating resin material such as polyamide (PA) or polyphenylene sulfide (PPS), and the power semiconductor module 1 and the smoothing capacitor module 3 are mounted on the mounting surface 411. The lower surface 412 of the base portion 41 is provided with a thin metal plate 43 made of aluminum or the like, which is larger than the outer shape of the lower surface 412. The thin plate 43 is provided with an opening 431 for pulling out the high electric line 20 to the outside of the housing 4.
 また、ベース部41には薄板43の開口部431を挿通する突出部413が形成されている。突出部413はベース部41の下面412から下方に突出している。また、突出部413はベース部41を上下方向に貫通する貫通孔414を有している。強電ライン20は、貫通孔414を通じて筐体4の外部へと引き出され、外部の電気部品に電気的に接続する。 Further, the base portion 41 is formed with a protruding portion 413 through which the opening 431 of the thin plate 43 is inserted. The protruding portion 413 projects downward from the lower surface 412 of the base portion 41. Further, the protruding portion 413 has a through hole 414 that penetrates the base portion 41 in the vertical direction. The high-power line 20 is drawn out of the housing 4 through the through hole 414 and electrically connected to an external electric component.
 カバー部42は、例えばADC10やADC12などのアルミニウム系金属材料により形成され、パワー半導体モジュール1、制御基板2及び平滑コンデンサモジュール3の周囲を覆うようにベース部41に取り付けられる。カバー部42は、上壁421及び側壁422から構成され、側壁422には、強電ライン30と接続する強電コネクタ301が挿入される強電コネクタ挿入口423が形成される。また、側壁422の内側部位には、ベース部41の載置面411に当接する端面を有する段部424が形成される。側壁422の先端面425は、ベース部41の下面412に設けられた薄板43の外周縁432に当接する。カバー部42、ベース部41及び薄板43は、カバー部42の段部424とベース部41の載置面411とが当接する部分において薄板43の外側からボルト等により共締めされることにより締結される。このようにして、金属材料により形成されたカバー部42と薄板43とによってパワー半導体モジュール1及び平滑コンデンサモジュール3を完全に覆うことで、電力変換装置100の電磁シールド性を高めることができる。 The cover portion 42 is formed of an aluminum-based metal material such as ADC 10 or ADC 12, and is attached to the base portion 41 so as to cover the periphery of the power semiconductor module 1, the control board 2, and the smoothing capacitor module 3. The cover portion 42 is composed of an upper wall 421 and a side wall 422, and a high electric connector insertion port 423 into which a high electric connector 301 connected to the high electric line 30 is inserted is formed in the side wall 422. Further, a step portion 424 having an end surface that abuts on the mounting surface 411 of the base portion 41 is formed on the inner portion of the side wall 422. The tip surface 425 of the side wall 422 abuts on the outer peripheral edge 432 of the thin plate 43 provided on the lower surface 412 of the base portion 41. The cover portion 42, the base portion 41, and the thin plate 43 are fastened together by bolts or the like from the outside of the thin plate 43 at a portion where the step portion 424 of the cover portion 42 and the mounting surface 411 of the base portion 41 come into contact with each other. To. In this way, the electromagnetic shielding property of the power conversion device 100 can be enhanced by completely covering the power semiconductor module 1 and the smoothing capacitor module 3 with the cover portion 42 and the thin plate 43 formed of the metal material.
 次に強電ラインと強電端子の詳細について説明する。 Next, the details of the high-power line and high-power terminal will be explained.
 強電ライン10,20,30は、例えば無酸素銅などの導電性の良い金属バスバーである。前述のとおり、強電ライン10は平滑コンデンサモジュール3とパワー半導体モジュール1を電気的に接続する。また、強電ライン20はパワー半導体モジュール1と筐体4の外部の電気部品とを電気的に接続し、強電ライン30は平滑コンデンサモジュール3と筐体4の外部の電源とを電気的に接続する。 The high- power lines 10, 20, and 30 are metal bus bars with good conductivity such as oxygen-free copper. As described above, the high power line 10 electrically connects the smoothing capacitor module 3 and the power semiconductor module 1. Further, the high power line 20 electrically connects the power semiconductor module 1 and the external electric components of the housing 4, and the high power line 30 electrically connects the smoothing capacitor module 3 and the external power supply of the housing 4. ..
 強電ライン10,30は一端が、平滑コンデンサモジュール3内部のコンデンサ素子と一体化したバスバー32a,32bに電気的に接続する。バスバー32a,32bは、コンデンサ素子を収納する樹脂ケース31の底面311から樹脂ケース31の外部に引き出されている。強電ライン10は、平滑コンデンサモジュール3の底面に設けられた強電端子22において、ボルト等の強電端子部材によってバスバー32aに接続されるとともに平滑コンデンサモジュール3に固定される。同様に強電ライン30は、平滑コンデンサモジュール3の底面に設けられた強電端子23において、ボルト等の強電端子部材によってバスバー32bに接続されるとともに平滑コンデンサモジュール3に固定される。 One end of the high- power lines 10 and 30 is electrically connected to the bus bars 32a and 32b integrated with the capacitor element inside the smoothing capacitor module 3. The bus bars 32a and 32b are pulled out from the bottom surface 311 of the resin case 31 that houses the capacitor element to the outside of the resin case 31. The high-power line 10 is connected to the bus bar 32a by a high-power terminal member such as a bolt at the high-power terminal 22 provided on the bottom surface of the smoothing capacitor module 3 and is fixed to the smoothing capacitor module 3. Similarly, the high power line 30 is connected to the bus bar 32b by a high power terminal member such as a bolt at the high power terminal 23 provided on the bottom surface of the smoothing capacitor module 3 and is fixed to the smoothing capacitor module 3.
 強電ライン10は、強電端子22からベース部41の表面に沿って平滑コンデンサモジュール3の外側方向に延伸される。強電ライン10は延伸後の中途部位において、クランク状に屈曲され、強電ライン10の他端はパワー半導体モジュール1に接続する。また、強電ライン10は、パワー半導体モジュール1に接続する手前でパワー半導体モジュール1に設けられた強電端子11においてボルト等によりパワー半導体モジュール1に固定される。 The high-power line 10 extends from the high-power terminal 22 toward the outside of the smoothing capacitor module 3 along the surface of the base portion 41. The high-power line 10 is bent in a crank shape in the middle portion after stretching, and the other end of the high-power line 10 is connected to the power semiconductor module 1. Further, the high power line 10 is fixed to the power semiconductor module 1 by a bolt or the like at a high power terminal 11 provided in the power semiconductor module 1 before being connected to the power semiconductor module 1.
 強電ライン30は、強電端子23からベース部41の表面に沿って平滑コンデンサモジュール3の外側方向に延伸される。強電ライン30は延伸後の中途部位において、クランク状に屈曲され、強電ライン30の他端は筐体4の強電コネクタ挿入口423に挿入された強電コネクタ301に接続する。強電ライン30はさらに強電コネクタ301を介して筐体4の外部の電源に電気的に接続する。 The high-power line 30 extends from the high-power terminal 23 toward the outside of the smoothing capacitor module 3 along the surface of the base portion 41. The high-power line 30 is bent in a crank shape in the middle portion after stretching, and the other end of the high-power line 30 is connected to the high-power connector 301 inserted into the high-power connector insertion port 423 of the housing 4. The high-power line 30 is further electrically connected to an external power source of the housing 4 via the high-power connector 301.
 強電ライン20は、一端がパワー半導体モジュール1に接続され、他端は筐体4外部のモータ等電気部品に接続される。強電ライン20は、パワー半導体モジュール1に接続する手前でパワー半導体モジュール1に設けられた強電端子12においてボルト等によりパワー半導体モジュール1に固定される。また、強電ライン20は、筐体4のベース部41方向に曲げ加工がされ、前述のとおり、ベース部41の貫通孔414を通って筐体4の外部に引き出され、外部の電気部品に電気的に接続する。 One end of the high power line 20 is connected to the power semiconductor module 1, and the other end is connected to an electric component such as a motor outside the housing 4. The high power line 20 is fixed to the power semiconductor module 1 by a bolt or the like at a high power terminal 12 provided on the power semiconductor module 1 before being connected to the power semiconductor module 1. Further, the high electric line 20 is bent in the direction of the base portion 41 of the housing 4, and is drawn out to the outside of the housing 4 through the through hole 414 of the base portion 41 as described above, and is electrically supplied to the external electric components. Connect to.
 このように強電ライン20は絶縁性の樹脂材料で構成されたベース部41から引き出されるため、強電ライン20と筐体4との絶縁性は確保される。 Since the high-power line 20 is drawn out from the base portion 41 made of an insulating resin material in this way, the heat insulating property between the high-power line 20 and the housing 4 is ensured.
 一方、強電端子22,23は、導電性の部材から構成されている。強電端子22は強電端子部材により強電ライン10を平滑コンデンサモジュール3に固定し、強電端子23は強電端子部材により強電ライン30を平滑コンデンサモジュール3に固定する。 On the other hand, the high electric terminals 22 and 23 are composed of conductive members. The high-power terminal 22 fixes the high-power line 10 to the smoothing capacitor module 3 by the high-power terminal member, and the high-power terminal 23 fixes the high-power line 30 to the smoothing capacitor module 3 by the high-power terminal member.
 強電端子22は、上面221が平滑コンデンサモジュール3における樹脂ケース31の底面311と接するように平滑コンデンサモジュール3に設置され、上面221と底面222との間に強電ライン10及びバスバー32aを挟み込むように設けられる。強電端子22、強電ライン10、バスバー32a及び平滑コンデンサモジュール3は、ボルト等の強電端子部材により締結される。これにより、強電ライン10は、平滑コンデンサモジュール3に固定されるとともに、バスバー32aに電気的に接続する。また、強電端子22の底面222は、筐体4のベース部41に対向し、且つベース部41に近接している。 The high-power terminal 22 is installed in the smoothing capacitor module 3 so that the top surface 221 is in contact with the bottom surface 311 of the resin case 31 in the smoothing capacitor module 3, and the high-power line 10 and the bus bar 32a are sandwiched between the top surface 221 and the bottom surface 222. Provided. The high-power terminal 22, the high-power line 10, the bus bar 32a, and the smoothing capacitor module 3 are fastened by a high-power terminal member such as a bolt. As a result, the high electric line 10 is fixed to the smoothing capacitor module 3 and electrically connected to the bus bar 32a. Further, the bottom surface 222 of the high power terminal 22 faces the base portion 41 of the housing 4 and is close to the base portion 41.
 同様に、強電端子23は、上面231が平滑コンデンサモジュール3における樹脂ケース31の底面311と接するように平滑コンデンサモジュール3に設置され、上面231と底面232の間に強電ライン30及びバスバー32bを挟み込むように設けられる。強電端子23、強電ライン30、バスバー32b及び平滑コンデンサモジュール3は、ボルト等の強電端子部材により締結される。これにより、強電ライン30は、平滑コンデンサモジュール3に固定されるとともに、バスバー32bに電気的に接続する。また、強電端子23の底面232は、筐体4のベース部41に対向し、且つベース部41に近接している。 Similarly, the high electric terminal 23 is installed in the smoothing capacitor module 3 so that the upper surface 231 is in contact with the bottom surface 311 of the resin case 31 in the smoothing capacitor module 3, and the high electric line 30 and the bus bar 32b are sandwiched between the upper surface 231 and the bottom surface 232. It is provided as follows. The high power terminal 23, the high power line 30, the bus bar 32b, and the smoothing capacitor module 3 are fastened by a high power terminal member such as a bolt. As a result, the high electric line 30 is fixed to the smoothing capacitor module 3 and electrically connected to the bus bar 32b. Further, the bottom surface 232 of the high power terminal 23 faces the base portion 41 of the housing 4 and is close to the base portion 41.
 このように、強電端子22,23をベース部41に近接するように配置しても、ベース部41が絶縁性の樹脂材料で構成されているため、強電端子22,23及び強電端子22,23によって固定される強電ライン10,30と筐体4との絶縁性は確保される。なお、強電端子22,23の底面222,232は筐体4のベース部41に接触していてもよい。 In this way, even if the high- power terminals 22 and 23 are arranged close to the base portion 41, since the base portion 41 is made of an insulating resin material, the high- power terminals 22 and 23 and the high- power terminals 22 and 23 The insulation between the high- voltage lines 10 and 30 fixed by the above and the housing 4 is ensured. The bottom surfaces 222 and 232 of the high- power terminals 22 and 23 may be in contact with the base portion 41 of the housing 4.
 なお、強電端子22,23の底面222,232と筐体4のベース部41とが近接または接触する部分の面積は特に限定されず、筐体4内の部品の配置などを考慮して適宜決定することができる。 The area of the portion where the bottom surfaces 222 and 232 of the high- power terminals 22 and 23 and the base portion 41 of the housing 4 are in close contact with each other is not particularly limited, and is appropriately determined in consideration of the arrangement of parts in the housing 4. can do.
 また、強電端子22,23とともに、強電ライン10,30をベース部41に近接または接触する部分を有するように配置してもよい。このように強電ライン10,30をベース部41に近接または接触させても、ベース部41が絶縁性の樹脂材料で構成されているため、強電ライン10,30と筐体4との絶縁性は確保される。 Further, the high electric lines 10 and 30 may be arranged together with the high electric terminals 22 and 23 so as to have a portion close to or in contact with the base portion 41. Even if the high- voltage lines 10 and 30 are brought close to or in contact with the base portion 41 in this way, the insulation between the high- voltage lines 10 and 30 and the housing 4 is high because the base portion 41 is made of an insulating resin material. To be secured.
 上記した第1実施形態の電力変換装置100によれば、以下の効果を得ることができる。 According to the power conversion device 100 of the first embodiment described above, the following effects can be obtained.
 電力変換装置100は、筐体4が、パワー半導体モジュール1(強電部品)及び平滑コンデンサモジュール3(強電部品)を載置する樹脂材料のベース部41と、パワー半導体モジュール1及び平滑コンデンサモジュール3を覆うようにベース部41に取り付けられる金属製のカバー部42と、から構成される。また、電力変換装置100は、一端が平滑コンデンサモジュール3に接続する強電ライン10,30(導体部)を平滑コンデンサモジュール3に固定する強電端子22,23を備える。そして、強電端子22,23の一部は、筐体4のベース部41に近接または接触する。このように、強電端子22,23をベース部41に近接または接触するように配置しても、ベース部41は絶縁性の樹脂材料により形成されているため、強電端子22,23及び強電端子22,23によって固定される強電ライン10,30と筐体4との絶縁性は確保される。また、強電ライン10,30と筐体4との間に電気的絶縁を確保するための大きなスペースをとる必要がないため、省スペース化が可能となる。従って、平滑コンデンサモジュール3に接続する強電ライン10,30と筐体4との間の絶縁性を確保しつつ、省スペース化が可能な電力変換装置を提供することができる。 In the power conversion device 100, the housing 4 comprises a resin material base 41 on which the power semiconductor module 1 (high power component) and the smoothing capacitor module 3 (high power component) are placed, and the power semiconductor module 1 and the smoothing capacitor module 3. It is composed of a metal cover portion 42 attached to the base portion 41 so as to cover the base portion 41. Further, the power conversion device 100 includes high power terminals 22 and 23 for fixing the high power lines 10 and 30 (conductor portion) whose one end is connected to the smoothing capacitor module 3 to the smoothing capacitor module 3. Then, a part of the high power terminals 22 and 23 comes into close contact with or comes into contact with the base portion 41 of the housing 4. In this way, even if the high- power terminals 22 and 23 are arranged so as to be close to or in contact with the base portion 41, since the base portion 41 is made of an insulating resin material, the high- power terminals 22 and 23 and the high-power terminals 22 The insulation between the high electric lines 10 and 30 fixed by 23 and 23 and the housing 4 is ensured. Further, since it is not necessary to take a large space between the high electric lines 10 and 30 and the housing 4 for ensuring electrical insulation, space saving is possible. Therefore, it is possible to provide a power conversion device capable of saving space while ensuring the insulation between the high power lines 10 and 30 connected to the smoothing capacitor module 3 and the housing 4.
 次に、電力変換装置100は、パワー半導体モジュール1(強電部品)と平滑コンデンサモジュール3(強電部品)とを接続する強電ライン10(第1導体部)と、平滑コンデンサモジュール3と筐体4の外部の電源とを接続する強電ライン30(第2導体部)とを有する。そして強電ライン10,30は、筐体4のベース部41に近接または接触する部分を有している。このように強電ライン10,30をベース部41に近接または接触するように配置しても、ベース部41は絶縁性の樹脂材料により形成されているため、強電ライン10,30と筐体4との絶縁性は確保される。また、強電ライン10,30と筐体4との間に電気的絶縁を確保するための大きなスペースをとる必要がないため、より省スペース化が可能となる。従って、平滑コンデンサモジュール3に接続する強電ライン10,30と筐体4との間の絶縁性を確保しつつ、より省スペース化が可能な電力変換装置を提供することができる。 Next, the power conversion device 100 includes a high power line 10 (first conductor portion) connecting the power semiconductor module 1 (high power component) and the smoothing capacitor module 3 (high power component), and the smoothing capacitor module 3 and the housing 4. It has a high power line 30 (second conductor portion) for connecting to an external power source. The high- power lines 10 and 30 have a portion that is close to or in contact with the base portion 41 of the housing 4. Even if the high- power lines 10 and 30 are arranged so as to be close to or in contact with the base portion 41 in this way, since the base portion 41 is made of an insulating resin material, the high- power lines 10 and 30 and the housing 4 Insulation is ensured. Further, since it is not necessary to take a large space between the high electric lines 10 and 30 and the housing 4 for ensuring electrical insulation, more space can be saved. Therefore, it is possible to provide a power conversion device capable of further saving space while ensuring the insulation between the high power lines 10 and 30 connected to the smoothing capacitor module 3 and the housing 4.
 また、電力変換装置100は、パワー半導体モジュール1(強電部品)と筐体4の外部の電気部品とを接続する強電ライン20(第2導体部)を有し、強電ライン20はベース部41から筐体4の外部に引き出される。このように強電ライン20が絶縁性の樹脂材料により形成されたベース部41から筐体4の外部に引き出されるため、強電ライン20と筐体4との絶縁性は確保される。また、強電ライン20と筐体4との間に電気的絶縁を確保するための大きなスペースをとる必要がないため、金属筐体から強電ラインを引き出す場合に比べて、省スペース化が可能となる。従って、パワー半導体モジュール1に接続する強電ライン20と筐体4との間の絶縁性を確保しつつ、より省スペース化が可能な電力変換装置を提供することができる。 Further, the power conversion device 100 has a high power line 20 (second conductor portion) for connecting the power semiconductor module 1 (high power component) and an external electric component of the housing 4, and the high power line 20 starts from the base portion 41. It is pulled out to the outside of the housing 4. Since the high-power line 20 is pulled out from the base portion 41 formed of the insulating resin material to the outside of the housing 4, the heat insulating property between the high-power line 20 and the housing 4 is ensured. Further, since it is not necessary to take a large space between the high electric line 20 and the housing 4 to secure electrical insulation, the space can be saved as compared with the case where the high electric line is pulled out from the metal housing. .. Therefore, it is possible to provide a power conversion device capable of further saving space while ensuring the insulation between the high power line 20 connected to the power semiconductor module 1 and the housing 4.
 なお、強電ラインのそれぞれの本数は特に限られず、何本設けてもよい。また、強電端子の個数も限定されず、強電ラインの本数に合わせて適宜設ければよい。 The number of each high-power line is not particularly limited, and any number may be provided. Further, the number of high-power terminals is not limited, and may be appropriately provided according to the number of high-power lines.
 また、強電ライン20はベース部41から筐体4の外部に引き出されることが好ましいが、必ずしもこれに限られず、強電ライン30のように筐体4の側壁422から外部に接続されていてもよい。 Further, the high electric line 20 is preferably pulled out from the base portion 41 to the outside of the housing 4, but is not necessarily limited to this, and may be connected to the outside from the side wall 422 of the housing 4 like the high electric line 30. ..
 また、省スペース化の観点から、強電ライン10,20,30のいずれも筐体4のベース部41に近接または接触していることが好ましいが、必ずしもこれに限られない。例えば、強電ライン10のみがベース部41に近接または接触していてもよい。 Further, from the viewpoint of space saving, it is preferable that all of the high- power lines 10, 20, and 30 are close to or in contact with the base portion 41 of the housing 4, but this is not always the case. For example, only the high power line 10 may be in close proximity to or in contact with the base 41.
 また、省スペース化の観点から、強電端子及び強電ラインのいずれも筐体4のベース部41に近接または接触していることが好ましいが、必ずしもこれに限られず、例えば強電端子のみがベース部41に近接または接触していてもよい。 Further, from the viewpoint of space saving, it is preferable that both the high electric terminal and the high electric line are close to or in contact with the base portion 41 of the housing 4, but the present invention is not limited to this, and for example, only the high electric terminal is the base portion 41. May be in close proximity to or in contact with.
 (第2実施形態)
 図2を参照して、第2実施形態による電力変換装置100を説明する。なお、第1実施形態と同様の要素には同一の符号を付し、その説明を省略する。
(Second Embodiment)
The power conversion device 100 according to the second embodiment will be described with reference to FIG. The same elements as those in the first embodiment are designated by the same reference numerals, and the description thereof will be omitted.
 図2は、第2実施形態による電力変換装置の断面模式図である。本実施形態では、筐体4のベース部41が、上方へ延びる延設部44を有する点が第1実施形態と異なる。 FIG. 2 is a schematic cross-sectional view of the power conversion device according to the second embodiment. The present embodiment is different from the first embodiment in that the base portion 41 of the housing 4 has an extending portion 44 extending upward.
 図2に示すように、筐体4のベース部41は、端部415から上方へ延びる延設部44を有している。また、延設部44は、先端441から筐体4の外側方向に延びるフランジ部442を有している。 As shown in FIG. 2, the base portion 41 of the housing 4 has an extension portion 44 extending upward from the end portion 415. Further, the extension portion 44 has a flange portion 442 extending outward from the tip 441 of the housing 4.
 また、図2に示すように、カバー部42の側壁422は、フランジ部442上面に当接する端面を有する段部426が形成される。側壁422の先端面427はベース部41の下面412に設けられた薄板43の外周縁432に当接する。カバー部42、ベース部41の延設部44及び薄板43は、カバー部42の段部426とベース部41の先端面443とが当接する部分において薄板43の外側からボルト等により共締めされることにより締結される。これにより、カバー部42の側壁422とベース部41の延設部44とが一体となって筐体4の側面を構成する。即ち、延設部44は筐体4の側面の一部を構成する。 Further, as shown in FIG. 2, the side wall 422 of the cover portion 42 is formed with a stepped portion 426 having an end surface that abuts on the upper surface of the flange portion 442. The tip surface 427 of the side wall 422 abuts on the outer peripheral edge 432 of the thin plate 43 provided on the lower surface 412 of the base portion 41. The cover portion 42, the extension portion 44 of the base portion 41, and the thin plate 43 are jointly tightened from the outside of the thin plate 43 at a portion where the step portion 426 of the cover portion 42 and the tip surface 443 of the base portion 41 abut. It is concluded by. As a result, the side wall 422 of the cover portion 42 and the extension portion 44 of the base portion 41 are integrated to form the side surface of the housing 4. That is, the extension portion 44 constitutes a part of the side surface of the housing 4.
 次に、図2に示すように、パワー半導体モジュール1に接続する強電ライン20は、ベース部41の延設部44に近接した状態で配設され、ベース部41の貫通孔414から筐体4の外部に引き出される。このように強電ライン20をベース部41の延設部44に近接した状態で配設しても、ベース部41は絶縁性の樹脂材料により形成されているため、強電ライン20と筐体4との絶縁性は確保される。なお、強電ライン20は延設部44に接触していてもよい。 Next, as shown in FIG. 2, the high electric line 20 connected to the power semiconductor module 1 is arranged in a state close to the extending portion 44 of the base portion 41, and is arranged from the through hole 414 of the base portion 41 to the housing 4 It is pulled out to the outside of. Even if the high-power line 20 is arranged in a state close to the extended portion 44 of the base portion 41 in this way, since the base portion 41 is formed of an insulating resin material, the high-power line 20 and the housing 4 Insulation is ensured. The high electric line 20 may be in contact with the extension portion 44.
 また、図2に示すように、平滑コンデンサモジュール3に接続する強電ライン30は、ベース部41の延設部44に近接した状態で配設され、強電コネクタ301に接続し、強電コネクタ301を介して外部の電源に電気的に接続する。このように強電ライン30をベース部41の延設部44に近接した状態で配設しても、ベース部41は絶縁性の樹脂材料により形成されているため、強電ライン30と筐体4との絶縁性は確保される。なお、強電ライン30は延設部44に接触していてもよい。 Further, as shown in FIG. 2, the high electric line 30 connected to the smoothing capacitor module 3 is arranged in a state close to the extending portion 44 of the base portion 41, connected to the high electric connector 301, and via the high electric connector 301. And electrically connect to an external power supply. Even if the high-power line 30 is arranged close to the extended portion 44 of the base portion 41 in this way, since the base portion 41 is formed of an insulating resin material, the high-power line 30 and the housing 4 Insulation is ensured. The high electric line 30 may be in contact with the extension portion 44.
 なお、強電ライン20,30がベース部41の延設部44に近接または接触する部分の長さは特に限定されず、筐体4内の部品の配置などを考慮して適宜決定することができる。 The length of the portion where the high electric lines 20 and 30 are close to or in contact with the extended portion 44 of the base portion 41 is not particularly limited, and can be appropriately determined in consideration of the arrangement of parts in the housing 4. ..
 上記した第2実施形態による電力変換装置100によれば、以下の効果を得ることができる。 According to the power conversion device 100 according to the second embodiment described above, the following effects can be obtained.
 電力変換装置100は、樹脂材料により形成される筐体4のベース部41が端部415から上方へ延び、筐体4の側面の一部を構成する延設部44を有している。また、パワー半導体モジュール1(強電部品)と筐体4の外部の電気部品を接続する強電ライン20(第2導体部)及び平滑コンデンサモジュール3(強電部品)と筐体4の外部の電源とを接続する強電ライン30(第2導体部)は、延設部44に近接または接触する。このように、強電ライン20,30をベース部41の延設部44に近接または接触するように配置しても、ベース部41は絶縁性の樹脂材料により形成されているため、強電ライン20,30と筐体4との絶縁性は確保される。即ち、強電ライン20,30と筐体4の側面との間にも電気的絶縁を確保するための大きなスペースをとる必要がないため、さらなる省スペース化が可能となり、装置の小型化が実現される。従って、パワー半導体モジュール1及び平滑コンデンサモジュール3に接続する強電ライン20,30と筐体4との間の絶縁性を確保しつつ、省スペース化が可能な電力変換装置を提供することができる。 The power conversion device 100 has an extension portion 44 in which a base portion 41 of the housing 4 made of a resin material extends upward from an end portion 415 and forms a part of a side surface of the housing 4. Further, the power semiconductor module 1 (high electric component) and the high electric line 20 (second conductor portion) connecting the external electric component of the housing 4 and the smoothing capacitor module 3 (high electric component) and the external power supply of the housing 4 are connected. The high power line 30 (second conductor portion) to be connected is close to or in contact with the extension portion 44. In this way, even if the high- power lines 20 and 30 are arranged so as to be close to or in contact with the extended portion 44 of the base portion 41, the base portion 41 is formed of an insulating resin material, so that the high- power lines 20 and 30 The insulation between the 30 and the housing 4 is ensured. That is, since it is not necessary to take a large space between the high electric lines 20 and 30 and the side surface of the housing 4 to secure electrical insulation, further space saving is possible and the device is downsized. To. Therefore, it is possible to provide a power conversion device capable of saving space while ensuring the insulation between the high electric lines 20 and 30 connected to the power semiconductor module 1 and the smoothing capacitor module 3 and the housing 4.
 (第3実施形態)
 図3を参照して、第3実施形態による電力変換装置100を説明する。なお、他の実施形態と同様の要素には同一の符号を付し、その説明を省略する。
(Third Embodiment)
The power conversion device 100 according to the third embodiment will be described with reference to FIG. The same elements as those of the other embodiments are designated by the same reference numerals, and the description thereof will be omitted.
 図3は第3実施形態による電力変換装置100の断面模式図である。図3に示すように、本実施形態では、ベース部41が、パワー半導体モジュール1を冷却するための冷却路45(冷媒流路)を備える。 FIG. 3 is a schematic cross-sectional view of the power conversion device 100 according to the third embodiment. As shown in FIG. 3, in the present embodiment, the base portion 41 includes a cooling passage 45 (refrigerant flow path) for cooling the power semiconductor module 1.
 図3に示すように、ベース部41は、パワー半導体モジュール1を搭載した部分の下方に、パワー半導体モジュール1を冷却する冷却水(冷媒)が流れる冷却路45(冷媒流路)を備える。また、ベース部41は、冷却路45の近傍に凹部46を備える。 As shown in FIG. 3, the base portion 41 includes a cooling passage 45 (refrigerant flow path) through which cooling water (refrigerant) for cooling the power semiconductor module 1 flows below the portion on which the power semiconductor module 1 is mounted. Further, the base portion 41 is provided with a recess 46 in the vicinity of the cooling passage 45.
 凹部46には平滑コンデンサモジュール3のバスバー32aに接続する強電ライン10が曲げ加工がされて入り込む。強電ライン10は凹部46内でUターンしてパワー半導体モジュール1に接続するように配置される。 The high electric line 10 connected to the bus bar 32a of the smoothing capacitor module 3 is bent and enters the recess 46. The high electric line 10 is arranged so as to make a U-turn in the recess 46 and connect to the power semiconductor module 1.
 また、強電ライン10は、図3に示すようにベース部41における凹部46内の冷却路45に近い側の側面に接触するように配置される。このように、強電ライン10をベース部41に接触させるように配置しても、ベース部41は絶縁性の材料により形成されているため、強電ライン10と筐体4との間の絶縁性は確保される。また、強電ライン10は冷却路45の近傍に設けられた凹部46においてベース部41に接触しているため、冷却路45を流れる冷却水により強電ライン10及び強電ラインに接続する平滑コンデンサモジュール3、パワー半導体モジュール1が冷却される。 Further, as shown in FIG. 3, the high electric line 10 is arranged so as to come into contact with the side surface of the base portion 41 in the recess 46 on the side close to the cooling passage 45. In this way, even if the high electric line 10 is arranged so as to be in contact with the base portion 41, since the base portion 41 is formed of an insulating material, the insulating property between the high electric line 10 and the housing 4 is high. To be secured. Further, since the high power line 10 is in contact with the base portion 41 in the recess 46 provided in the vicinity of the cooling passage 45, the smoothing capacitor module 3 connected to the high power line 10 and the high power line by the cooling water flowing through the cooling passage 45. The power semiconductor module 1 is cooled.
 なお、強電ライン10はベース部41に接触していることが好ましいが、必ずしもこれに限られず、冷却路45近傍においてベース部41に近接させるように配置してもよい。 It is preferable that the high electric line 10 is in contact with the base portion 41, but the present invention is not limited to this, and the high electric line 10 may be arranged so as to be close to the base portion 41 in the vicinity of the cooling passage 45.
 また、強電ライン10は必ずしも凹部46内でベース部41に接触させる必要はなく、冷却路45の近傍であればどこにおいてベース部41に接触させてもよい。例えば、冷却路45に対向する位置でベース部41に接触するように配置してもよい。 Further, the high electric line 10 does not necessarily have to come into contact with the base portion 41 in the recess 46, and may come into contact with the base portion 41 anywhere in the vicinity of the cooling passage 45. For example, it may be arranged so as to come into contact with the base portion 41 at a position facing the cooling passage 45.
 上記した第3実施形態による電力変換装置100によれば、以下の効果を得ることができる。 According to the power conversion device 100 according to the third embodiment described above, the following effects can be obtained.
 電力変換装置100のベース部41は、パワー半導体モジュール1(強電部品)を冷却する冷却水(冷媒)が流れる冷却路45(冷媒流路)を備え、強電ライン10(導体部)は、冷却路45の近傍においてベース部41に接触する。このように、強電ライン10をベース部41に接触させるように配置しても、ベース部41は絶縁性の材料により形成されているため、強電ライン10と筐体4との間の絶縁性は確保される。また、強電ライン10は冷却路45の近傍においてベース部41に接触しているため、冷却路45を流れる冷却水により強電ライン10及び強電ラインに接続する平滑コンデンサモジュール3、パワー半導体モジュール1が冷却される。即ち、強電ライン10と筐体4との間の絶縁性を確保しつつ、強電ライン10、平滑コンデンサモジュール3及びパワー半導体モジュール1の冷却効果を向上させた電力変換装置を提供することができる。 The base portion 41 of the power conversion device 100 includes a cooling passage 45 (refrigerant flow path) through which cooling water (refrigerant) for cooling the power semiconductor module 1 (high electric component) flows, and the high electric line 10 (conductor portion) is a cooling passage. It contacts the base portion 41 in the vicinity of 45. In this way, even if the high electric line 10 is arranged so as to be in contact with the base portion 41, since the base portion 41 is formed of an insulating material, the insulating property between the high electric line 10 and the housing 4 is high. To be secured. Further, since the high electric line 10 is in contact with the base portion 41 in the vicinity of the cooling path 45, the smoothing capacitor module 3 and the power semiconductor module 1 connected to the high electric line 10 and the high electric line are cooled by the cooling water flowing through the cooling path 45. Will be done. That is, it is possible to provide a power conversion device in which the cooling effect of the high power line 10, the smoothing capacitor module 3 and the power semiconductor module 1 is improved while ensuring the insulation between the high power line 10 and the housing 4.
 また、冷却効果が向上する分、冷却器を小型化することができ、装置全体を小型化することが可能となる。 In addition, the cooler can be miniaturized as the cooling effect is improved, and the entire device can be miniaturized.
 なお、本実施形態では、冷却路45をパワー半導体モジュール1の下方に設けているが、必ずしもこれに限られず、平滑コンデンサモジュール3の下方に設けてもよく、また、パワー半導体モジュール1と平滑コンデンサモジュール3のそれぞれの下方に1つずつ設けてもよい。 In the present embodiment, the cooling path 45 is provided below the power semiconductor module 1, but the present invention is not limited to this, and the cooling passage 45 may be provided below the smoothing capacitor module 3, and the power semiconductor module 1 and the smoothing capacitor may be provided. One may be provided below each of the modules 3.
 また、本実施形態では、強電ライン10を冷却路45の近傍においてベース部41に接触させているが、強電ライン10を平滑コンデンサモジュール3に固定する強電端子22を冷却路45の近傍においてベース部41に接触または近接させてもよい。 Further, in the present embodiment, the high electric line 10 is brought into contact with the base portion 41 in the vicinity of the cooling path 45, but the high electric terminal 22 for fixing the high electric line 10 to the smoothing capacitor module 3 is provided in the vicinity of the cooling path 45. It may be in contact with or in close proximity to 41.
 また、本実施形態では、冷却路45を流れる冷媒を冷却水としたが、冷媒はこれに限られず、例えば冷媒ガスでもよい。 Further, in the present embodiment, the refrigerant flowing through the cooling passage 45 is the cooling water, but the refrigerant is not limited to this, and may be, for example, a refrigerant gas.
 なお、いずれの実施形態においても、強電部品をパワー半導体モジュール1及び平滑コンデンサモジュール3としたが、強電部品は必ずしもこれに限られず、例えばDC/DCコンバータ等でもよい。 In any of the embodiments, the high-power components are the power semiconductor module 1 and the smoothing capacitor module 3, but the high-power components are not necessarily limited to these, and may be, for example, a DC / DC converter or the like.
 また、いずれの実施形態においても、弱電部品をパワー半導体モジュール1を制御する制御基板2としたが、弱電部品はこれに限られず、例えばモータ制御基板等でもよい。 Further, in any of the embodiments, the light electric component is the control board 2 for controlling the power semiconductor module 1, but the light electric component is not limited to this, and may be, for example, a motor control board or the like.
 また、いずれの実施形態においても、電力変換装置100の搭載方向は必ずしも筐体4のベース部41を下側に配置する必要はなく、電力変換装置100が搭載される車両のレイアウトに応じて自由な方向に配置してよい。例えば、ベース部41が上、カバー部42が下となるように図1等に示した電力変換装置100を上下反転した状態で設置してもよく、また電力変換装置100を傾けた状態で設置してもよい。 Further, in any of the embodiments, the mounting direction of the power conversion device 100 does not necessarily have to be arranged on the lower side of the base portion 41 of the housing 4, and is free depending on the layout of the vehicle on which the power conversion device 100 is mounted. It may be arranged in any direction. For example, the power conversion device 100 shown in FIG. 1 or the like may be installed upside down so that the base portion 41 is on the top and the cover portion 42 is on the bottom, or the power conversion device 100 may be installed in an inclined state. You may.
 以上、本発明の実施形態について説明したが、上記実施形態は本発明の適用例の一部を示したに過ぎず、本発明の技術的範囲を上記実施形態の具体的構成に限定する趣旨ではない。 Although the embodiments of the present invention have been described above, the above embodiments are only a part of the application examples of the present invention, and the technical scope of the present invention is limited to the specific configurations of the above embodiments. Absent.
 上記した各実施形態は、それぞれ単独の実施形態として説明したが、適宜組み合わせてもよい。 Although each of the above-described embodiments has been described as an individual embodiment, they may be combined as appropriate.

Claims (5)

  1.  強電部品と、
     前記強電部品を収容する筐体と、
     一端が前記強電部品に接続する導体部と、
     前記強電部品に設置されるとともに前記導体部を前記強電部品に固定する強電端子と、
     を備える電力変換装置であって、
     前記筐体は、樹脂材料により形成されるとともに前記強電部品を載置するベース部と、金属材料により形成されるとともに前記強電部品を覆うように前記ベース部に取り付けられるカバー部と、から構成され、
     前記強電部品に設置された前記強電端子の一部は、前記筐体の前記ベース部に近接または接触する、
     電力変換装置。
    With high electric parts
    A housing for accommodating the high-voltage parts and
    A conductor part whose one end connects to the high-voltage component,
    A high-power terminal installed on the high-power component and fixing the conductor portion to the high-power component,
    It is a power conversion device equipped with
    The housing is composed of a base portion formed of a resin material and on which the high electric component is placed, and a cover portion formed of a metal material and attached to the base portion so as to cover the high electric component. ,
    A part of the high power terminal installed on the high power component is in close proximity to or in contact with the base portion of the housing.
    Power converter.
  2.  請求項1に記載の電力変換装置であって、
     少なくとも2以上の前記強電部品を有し、
     前記導体部は前記強電部品どうしを接続する第1導体部と、前記強電部品と前記筐体外部の電気部品または電源とを接続する第2導体部とを含み、
     前記第1導体部と前記第2導体部の少なくとも一方は、前記筐体の前記ベース部に近接または接触する部分を有する、
     電力変換装置。
    The power conversion device according to claim 1.
    Have at least two or more of the high electrical components
    The conductor portion includes a first conductor portion that connects the high electric components to each other, and a second conductor portion that connects the high electric component and an electric component or a power source outside the housing.
    At least one of the first conductor portion and the second conductor portion has a portion that is close to or contacts the base portion of the housing.
    Power converter.
  3.  請求項2に記載の電力変換装置であって、
     前記第2導体部は、前記ベース部から前記筐体外部に引き出される、
     電力変換装置。
    The power conversion device according to claim 2.
    The second conductor portion is pulled out from the base portion to the outside of the housing.
    Power converter.
  4.  請求項2に記載の電力変換装置であって、
     前記筐体の前記ベース部は、端部から上方へ延びる延設部を有し、
     前記第2導体部は、前記延設部に近接または接触する部分を有する、
     電力変換装置。
    The power conversion device according to claim 2.
    The base portion of the housing has an extension portion extending upward from the end portion.
    The second conductor portion has a portion that is close to or in contact with the extension portion.
    Power converter.
  5.  請求項1から4のいずれか一つに記載の電力変換装置であって、
     前記ベース部は、前記強電部品を載置した部分の下方に、前記強電部品を冷却する冷媒が流れる冷媒流路を備え、
     前記強電端子または前記導体部の少なくとも一方は、前記冷媒流路の近傍において前記ベース部に近接または接触する、
     電力変換装置。
    The power conversion device according to any one of claims 1 to 4.
    The base portion is provided with a refrigerant flow path through which a refrigerant for cooling the high electric component flows below the portion on which the high electric component is placed.
    At least one of the high power terminal or the conductor portion is close to or in contact with the base portion in the vicinity of the refrigerant flow path.
    Power converter.
PCT/IB2019/000407 2019-03-29 2019-03-29 Power conversion device WO2020201799A1 (en)

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015075976A1 (en) * 2013-11-20 2015-05-28 日産自動車株式会社 Power conversion apparatus
JP2016220500A (en) * 2015-05-26 2016-12-22 株式会社デンソー Electric power conversion system
WO2017187598A1 (en) * 2016-04-28 2017-11-02 日産自動車株式会社 In-vehicle power conversion device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015075976A1 (en) * 2013-11-20 2015-05-28 日産自動車株式会社 Power conversion apparatus
JP2016220500A (en) * 2015-05-26 2016-12-22 株式会社デンソー Electric power conversion system
WO2017187598A1 (en) * 2016-04-28 2017-11-02 日産自動車株式会社 In-vehicle power conversion device

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