WO2020199268A1 - Structure d'encapsulation de diode électroluminescente organique (delo) et procédé d'encapsulation de delo - Google Patents

Structure d'encapsulation de diode électroluminescente organique (delo) et procédé d'encapsulation de delo Download PDF

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Publication number
WO2020199268A1
WO2020199268A1 PCT/CN2019/083600 CN2019083600W WO2020199268A1 WO 2020199268 A1 WO2020199268 A1 WO 2020199268A1 CN 2019083600 W CN2019083600 W CN 2019083600W WO 2020199268 A1 WO2020199268 A1 WO 2020199268A1
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WO
WIPO (PCT)
Prior art keywords
metal
array substrate
layer
oled
cover plate
Prior art date
Application number
PCT/CN2019/083600
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English (en)
Chinese (zh)
Inventor
梁晓明
Original Assignee
深圳市华星光电半导体显示技术有限公司
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Publication of WO2020199268A1 publication Critical patent/WO2020199268A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8423—Metallic sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the invention relates to the technical field of display panels, in particular to an OLED packaging structure and an OLED packaging method.
  • Organic Light Emitting Diode OLED Organic Light Emitting Diode
  • OLED Organic Light Emitting Diode
  • the OLED is composed of an anode, a cathode, and one or more layers of organic materials between the electrodes.
  • the holes and electrons injected from the anode and the cathode recombine in the organic light-emitting layer to form excitons, and the exciton radiates transition to emit light.
  • the metal cathode and organic materials in the OLED are susceptible to the influence of water vapor and oxygen, which reduces the efficiency and failure of the OLED, and affects the service life of the OLED. Therefore, the OLED has a high requirement for water and oxygen isolation.
  • the encapsulation effect of OLED largely affects the performance and service life of OLED.
  • OLED packaging mainly includes cover plate packaging and thin film packaging.
  • Cover plate encapsulation technology is to coat ultraviolet curing sealant (epoxy resin, etc.) or laser encapsulated glass glue on the encapsulation glass, so that the OLED has a better effect of isolating water and oxygen.
  • Thin film encapsulation is to alternately deposit multiple layers of inorganic or organic thin films on OLED devices to achieve the purpose of isolating water and oxygen.
  • the ability of these two packaging methods to isolate water and oxygen is still insufficient, resulting in a short lifetime of the OLED device.
  • the embodiments of the present invention provide an OLED packaging structure and an OLED packaging method to solve the problem of insufficient water and oxygen isolation ability of the existing packaging methods.
  • the embodiments of the present invention provide an OLED packaging structure and an OLED packaging method to solve the problem of insufficient water and oxygen isolation ability of the existing packaging methods.
  • the embodiment of the present invention provides an OLED packaging structure, including:
  • the array substrate and the cover plate arranged oppositely;
  • the material of the metal packaging layer is an alloy whose melting point is lower than a preset temperature
  • a thin film encapsulation layer provided on the OLED device.
  • a metal transition layer is further provided on the side of the metal packaging layer facing the cover plate.
  • a metal transition layer is further provided on the side of the metal packaging layer facing the array substrate.
  • an insulating layer is further provided on the side of the metal transition layer facing the array substrate.
  • the alloy is an alloy of at least two metals among bismuth, cadmium, tin, and indium.
  • the material of the metal transition layer is aluminum.
  • the embodiment of the present invention also provides an OLED packaging structure, including:
  • the array substrate and the cover plate arranged oppositely;
  • the OLED device, the sealant and the metal encapsulation layer arranged between the array substrate and the cover plate; the sealant surrounds the OLED device, and the metal encapsulation layer surrounds the sealant ;
  • a thin film encapsulation layer provided on the OLED device.
  • a metal transition layer is further provided on the side of the metal packaging layer facing the cover plate.
  • a metal transition layer is further provided on the side of the metal packaging layer facing the array substrate.
  • an insulating layer is further provided on the side of the metal transition layer facing the array substrate.
  • the material of the metal packaging layer is an alloy of at least two metals among bismuth, cadmium, tin, and indium.
  • the material of the metal transition layer is aluminum.
  • the embodiment of the present invention also provides an OLED packaging method, including:
  • the cover plate and the array substrate are combined, and a metal packaging layer is formed between the combined cover plate and the array substrate; the metal packaging layer surrounds the frame glue.
  • the method further includes:
  • An insulating layer and a metal transition layer are sequentially formed around the sealant
  • a metal transition layer is formed on the cover plate; the metal transition layer on the cover plate corresponds to the position of the metal transition layer on the array substrate.
  • the forming a metal packaging layer between the combined cover plate and the array substrate specifically includes:
  • 3D printing is used to print an alloy whose melting point is lower than a preset temperature between the metal transition layer of the cover plate and the metal transition layer of the array substrate to form a metal packaging layer.
  • the method further includes:
  • a thin film packaging layer is provided between the array substrate and the display area of the cover plate
  • a sealant and a metal packaging layer are provided between the array substrate and the non-display area of the cover plate
  • the metal packaging layer surrounds the sealant
  • FIG. 1 is a schematic structural diagram of an OLED packaging structure provided by an embodiment of the present invention.
  • FIG. 2 is a top view of an array substrate in an OLED packaging structure provided by an embodiment of the present invention.
  • FIG. 3 is another schematic structural diagram of an OLED packaging structure provided by an embodiment of the present invention.
  • FIG. 4 is a schematic flowchart of an OLED packaging method provided by an embodiment of the present invention.
  • FIG. 1 it is a schematic structural diagram of an OLED packaging structure provided by an embodiment of the present invention.
  • the OLED packaging structure provided by the embodiment of the present invention includes an array substrate 1 and a cover plate 2. Wherein, the array substrate 1 and the cover plate 2 are arranged oppositely and in parallel. Both the array substrate 1 and the cover plate 2 include a display area and a non-display area, and the display area of the display area of the array substrate 1 and the display area of the cover plate 2 are correspondingly arranged, and the non-display area of the array substrate 1 and the non-display area of the cover plate 2 are arranged correspondingly.
  • An OLED device 3 is provided between the display area of the array substrate 1 and the display area of the cover plate 2, and a thin film encapsulation layer 4 is provided on the OLED device 3.
  • the thin film encapsulation layer 4 includes multiple inorganic or organic thin films for isolating water and oxygen. Enter OLED device 3.
  • a sealant 5 is provided between the non-display area of the array substrate 1 and the non-display area of the cover plate 2.
  • the sealant 5 surrounds the OLED device 3, as shown in FIG. 2, so that the array substrate 1 and the cover plate 2 pass The sealant 5 seals the OLED device 3 to prevent water and oxygen from entering the OLED device 3.
  • the array substrate 1 and the cover plate 2 are also provided with an edge area, which surrounds the seal 5, and a metal encapsulation layer 6 is provided between the edge area of the array substrate 1 and the edge area of the cover plate 2, that is, in the frame A metal encapsulation layer 6 is further provided on the outside of the glue 5, and the metal encapsulation layer 6 surrounds the frame glue 5, as shown in Figure 2, to re-encapsulate the edges of the array substrate 1 and the cover 2 to further isolate water and oxygen from entering OLED device 3.
  • the material of the metal encapsulation layer 6 is a low melting point alloy, that is, an alloy with a melting point lower than a preset temperature.
  • the molten low melting point alloy is printed into the gap between the array substrate 1 and the cover plate 2 by 3D printing.
  • the molten low melting point alloy has certain fluidity and can be spread out between the array substrate 1 and the cover plate 2.
  • the metal encapsulation layer 6 is formed.
  • the melting point of the low melting point alloy is lower than 150° C. to avoid damage to the OLED device due to excessive temperature.
  • the low melting point alloy may be an alloy of metals such as bismuth, cadmium, tin, and indium, such as bismuth-tin alloy, indium-tin alloy, and the like.
  • the side of the metal packaging layer facing the cover plate is further provided with a metal transition layer
  • the side of the metal packaging layer facing the array substrate is further provided with a metal transition layer.
  • the edge area of the array substrate 1 is also provided with a metal transition layer 7, and the edge area of the cover plate 1 is also provided with a metal transition layer 8.
  • the metal packaging layer 6 is provided on the metal transition layer 7 and the metal transition layer. Between 8.
  • the metal transition layer 7 and the metal transition layer 8 are deposited by CVD (Chemical Vapor Deposition) or PECVD (Plasma Enhanced Chemical Vapor Deposition) to improve the low melting point alloy
  • CVD Chemical Vapor Deposition
  • PECVD Plasma Enhanced Chemical Vapor Deposition
  • Al metallic aluminum
  • an insulating layer is further provided on the side of the metal transition layer facing the array substrate. As shown in FIG. 3, an insulating layer 9 is further provided on the edge area of the array substrate 1, and the metal transition layer 7 is provided on the insulating layer 9. An insulating layer 9 is deposited between the array substrate 1 and the metal transition layer 7 to prevent the TFT on the array substrate 1 from contacting the metal transition layer 7 and short-circuit.
  • the material of the insulating layer 9 is silicon dioxide (S i O 2 ).
  • a thin film packaging layer is provided between the array substrate and the display area of the cover plate, and a sealant and a metal packaging layer are provided between the array substrate and the non-display area of the cover plate, and
  • the metal encapsulation layer surrounds the sealant to re-encapsulate the edge of the OLED device on the basis of the cover plate encapsulation and the film encapsulation, so as to improve the ability of the OLED device to isolate water and oxygen, thereby extending the service life of the OLED device.
  • FIG. 4 is a schematic flowchart of an OLED packaging method provided by an embodiment of the present invention.
  • An OLED device and a thin film packaging layer are sequentially formed on the array substrate.
  • the array substrate 1 includes a display area and a non-display area.
  • the OLED device 3 is formed in the display area of the array substrate 1, and the thin film encapsulation layer 4 is formed on the OLED device 3.
  • a sealant 5 is formed in the non-display area of the array substrate 1, and the sealant 5 surrounds the OLED device 3, as shown in FIG. 2.
  • the cover plate 2 is combined with the array substrate 1 so that the array substrate 1 and the cover plate 2 are sealed by the sealant 5 to the OLED device 3 to prevent water and oxygen from entering the OLED device 3.
  • the combined cover plate 2 and the array substrate 1 are provided with an edge area, which surrounds the seal 5, and a metal encapsulation layer 6 is provided between the edge area of the array substrate 1 and the edge area of the cover plate 2, namely A metal encapsulation layer 6 is further provided on the outside of the sealant 5, and the metal encapsulation layer 6 surrounds the sealant 5, as shown in FIG. 2, to re-encapsulate the edges of the array substrate 1 and the cover plate 2 to further isolate water Oxygen enters the OLED device 3.
  • the method further includes:
  • An insulating layer and a metal transition layer are sequentially formed around the sealant
  • a metal transition layer is formed on the cover plate; the metal transition layer on the cover plate corresponds to the position of the metal transition layer on the array substrate.
  • an insulating layer 9 and a metal transition layer 7 are sequentially formed on the edge region of the array substrate 1, a metal transition layer 8 is formed on the edge region of the cover plate 1, and the metal transition layer 7 and A metal encapsulation layer 6 is formed between the metal transition layers 8.
  • the metal transition layer 7 and the metal transition layer 8 are deposited by CVD or PECVD to improve the wettability of the low melting point alloy to glass, so that the metal packaging layer 6 has better contact with the array substrate 1 and the cover plate 2.
  • the material of the metal transition layer 7 and the metal transition layer 8 is metallic aluminum (Al).
  • An insulating layer 9 is deposited between the array substrate 1 and the metal transition layer 7 to prevent the TFT on the array substrate 1 from contacting the metal transition layer 7 and short-circuit.
  • the material of the insulating layer 9 is silicon dioxide (S i O 2 ).
  • the forming a metal packaging layer between the combined cover plate and the array substrate specifically includes:
  • 3D printing is used to print an alloy whose melting point is lower than a preset temperature between the metal transition layer of the cover plate and the metal transition layer of the array substrate to form a metal packaging layer.
  • the material of the metal packaging layer 6 is a low melting point alloy, that is, an alloy with a melting point lower than a preset temperature.
  • the molten low melting point alloy is printed into the gap between the array substrate 1 and the cover plate 2 by 3D printing.
  • the molten low melting point alloy has certain fluidity and can be spread out between the array substrate 1 and the cover plate 2.
  • the metal encapsulation layer 6 is formed.
  • the melting point of the low melting point alloy is lower than 150° C. to avoid damage to the OLED device due to excessive temperature.
  • the low melting point alloy may be an alloy of metals such as bismuth, cadmium, tin, and indium, such as bismuth-tin alloy, indium-tin alloy, and the like.
  • the method further includes:
  • forming a metal encapsulation layer on the edge area of the cover plate and the array substrate may cause the low melting point metal to overflow to the sides of the cover plate and the array substrate.
  • the edges of the cover plate and the array substrate are polished to increase the cover plate and the array substrate. The flatness of the edge of the array substrate.
  • the OLED packaging method provided in this embodiment is provided by providing a thin film packaging layer between the array substrate and the display area of the cover plate, and setting a sealant and a metal packaging layer between the array substrate and the non-display area of the cover plate, and The metal encapsulation layer surrounds the sealant to re-encapsulate the edge of the OLED device on the basis of the cover plate encapsulation and the film encapsulation, so as to improve the ability of the OLED device to isolate water and oxygen, thereby extending the service life of the OLED device.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne une structure d'encapsulation de DELO et un procédé d'encapsulation de DELO. La structure d'encapsulation de DELO comprend : un substrat de matrice et une plaque de recouvrement, disposés à l'opposé l'une de l'autre ; un dispositif à DELO, un agent d'étanchéité et une couche d'encapsulation métallique disposée entre le substrat de réseau et la plaque de recouvrement, le matériau d'étanchéité entourant le dispositif à DELO et la couche d'encapsulation métallique entourant le matériau d'étanchéité ; et une couche d'encapsulation de film mince, disposée sur le dispositif à DELO. L'invention améliore ainsi la capacité des dispositifs à DELO à bloquer l'eau et l'oxygène, tout en prolongeant la durée de vie des dispositifs à DELO.
PCT/CN2019/083600 2019-04-04 2019-04-22 Structure d'encapsulation de diode électroluminescente organique (delo) et procédé d'encapsulation de delo WO2020199268A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910271992.4 2019-04-04
CN201910271992.4A CN110071223A (zh) 2019-04-04 2019-04-04 一种oled封装结构及oled封装方法

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Publication Number Publication Date
WO2020199268A1 true WO2020199268A1 (fr) 2020-10-08

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PCT/CN2019/083600 WO2020199268A1 (fr) 2019-04-04 2019-04-22 Structure d'encapsulation de diode électroluminescente organique (delo) et procédé d'encapsulation de delo

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WO (1) WO2020199268A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110854294A (zh) * 2019-11-20 2020-02-28 上海大学 一种oled的封装方法以及封装得到的oled
CN114665041A (zh) * 2022-03-16 2022-06-24 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035849A (zh) * 2012-12-20 2013-04-10 友达光电股份有限公司 一种有机发光二极管封装结构
CN104916789A (zh) * 2015-06-30 2015-09-16 京东方科技集团股份有限公司 一种oled封装方法及oled器件
CN107248550A (zh) * 2017-06-26 2017-10-13 深圳市华星光电技术有限公司 Oled面板的封装方法
CN107863453A (zh) * 2017-11-08 2018-03-30 固安翌光科技有限公司 一种基于端面封装的oled器件及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103035849A (zh) * 2012-12-20 2013-04-10 友达光电股份有限公司 一种有机发光二极管封装结构
CN104916789A (zh) * 2015-06-30 2015-09-16 京东方科技集团股份有限公司 一种oled封装方法及oled器件
CN107248550A (zh) * 2017-06-26 2017-10-13 深圳市华星光电技术有限公司 Oled面板的封装方法
CN107863453A (zh) * 2017-11-08 2018-03-30 固安翌光科技有限公司 一种基于端面封装的oled器件及其制备方法

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