WO2020199087A1

WO2020199087A1 - Oled display panel and method for preparing same

Info

Publication number: WO2020199087A1
Application number: PCT/CN2019/080846
Authority: WO
Inventors: 林俊仪; 周启华
Original assignee: 深圳市柔宇科技有限公司
Priority date: 2019-04-01
Filing date: 2019-04-01
Publication date: 2020-10-08
Also published as: CN113383441A

Abstract

Disclosed are an OLED display panel (100) and a method for preparing same. The OLED display panel comprises: a display element (11) and an auxiliary conductive layer (15), wherein the display element (11) comprises a cathode (117), and the cathode (117) passes through a light-emitting region (13) from a circuit control region (12), and is at least partially removed in a peripheral region (14) to form an avoiding region allowing light to be transmitted through same; and the auxiliary conductive layer (15) is provided in the circuit control region (12) and is connected to the cathode (117) in series. According to the OLED display panel (100), the additional auxiliary conductive layer (15) connected to the cathode (117) in series is provided in the circuit control region (12), thereby increasing the contact area of the cathode (117) and reducing the impedance. The finally obtained OLED display panel (100) has a good transparency, and a display image also has a uniform brightness.

Description

OLED display panel and preparation method thereof

Technical field

This application relates to the field of display technology, in particular to an OLED display panel and a preparation method thereof.

Background technique

With the increasing development of display technology, various new technologies continue to emerge. The transparent display technology has attracted more and more attention due to its transparent display panel.

The transparent display panel can form a transparent display state so that the viewer can see the displayed image from the display panel, and can also see the object behind the display through the display panel. The transparent display panel has many possible applications, for example, it can be applied to windows of automobiles, display windows of shopping malls, etc.

The transparent display panel generally includes a peripheral area through which light passes and a light emitting area provided with at least one light emitting element. The light emitted by the transparent display panel from the light-emitting elements provided in the light-emitting area stimulates the user's visual information to display images, and allows the user to see objects located behind the transparent display panel through the peripheral area.

Organic light-emitting diodes (Organic Light-Emitting Diode, OLED) can be divided into three types of display panels according to the light emitting direction: bottom-emitting OLED display panels, double-side emitting OLED display panels, and top-emitting OLED display panels. Top-emission OLED display panels have the characteristics of high luminous efficiency and high color purity. Among the currently commonly used OLED display panels, more and more OLED display panels adopt a top-emission structure. The OLED display panel of the top emission structure usually adopts a transparent cathode and a reflective anode to realize light emission from the top of the device.

Because of the traditional transparent display OLED display panel, the cathode is covered over the entire surface (that is, the cathode covers the peripheral area, the light-emitting area, and other non-peripheral areas), which reduces the transmittance in the peripheral area and affects the perspective effect.

The traditional technology improves the transparency of the OLED display panel by reducing the film thickness of the cathode of the OLED display panel or patterning the cathode. However, reducing the film thickness of the cathode of the OLED display panel or patterning the cathode will cause the impedance of the cathode to be too high, resulting in uneven display brightness of the device.

Summary of the invention

This application aims to provide an OLED display panel and a preparation method thereof, so as to solve the technical problems that the traditional OLED display panel cannot simultaneously solve the problem of uneven brightness and poor transparency of the display screen.

In order to solve the above technical problems, a technical solution adopted in the embodiments of the present application is to provide an OLED display panel, including: a display element, the display element has a circuit control area, a light-emitting area and a peripheral area; the display element includes sequential The anode, the organic light-emitting unit and the cathode are laminated, the anode and the organic light-emitting unit are located in the light-emitting area, the cathode passes through the light-emitting area from the circuit control area, and the cathode is at least in the peripheral area. Part of it is removed to form an avoidance area that allows light to pass through; an auxiliary conductive layer, where the auxiliary conductive layer is arranged in the circuit control area and is electrically connected to the cathode.

Optionally, the peripheral area is a peripheral area through which light can pass.

Optionally, the auxiliary conductive layer includes a first region located under and connected to the cathode.

Optionally, the auxiliary conductive layer further includes a second area higher than the cathode and connected to the first area.

Optionally, the display panel further includes a flat layer supporting the anode, and in the circuit control area, the flat layer is further formed with a boss supporting the auxiliary conductive layer.

Optionally, the display panel further includes a pixel definition layer formed on the flat layer, the pixel definition layer has an opening, and the auxiliary conductive layer is connected to the cathode through the opening.

Optionally, the auxiliary conductive layer is connected in series with the cathode.

Optionally, the top surface of the boss includes at least two step surfaces with different heights, and at least a part of each step surface is covered by the auxiliary conductive layer.

Optionally, the auxiliary conductive layer includes a plurality of conductive wires arranged in a grid shape, and the conductive wires are connected in series with the patterned cathode of the display panel.

Optionally, the auxiliary conductive layer and the anode are fabricated in the same photolithography process.

Optionally, the auxiliary conductive layer and the anode are fabricated through different photolithography processes.

Optionally, the auxiliary conductive layer is prepared from a single-layer metallic conductor, a multilayer metallic conductor, or a multilayer non-metallic conductor.

Optionally, the display element further includes: an encapsulation layer deposited on the upper surface of the cathode and covering the circuit control area, the light-emitting area, and the peripheral area.

In order to solve the above technical problems, a technical solution adopted in the embodiments of the present application is to provide a method for preparing a transparent display panel, which includes the following steps: preparing an anode and an auxiliary conductive layer of a display element, the display element including a circuit control area , The light-emitting area and the peripheral area; the auxiliary conductive layer is prepared in the circuit control area; the organic light-emitting unit of the display element is prepared; the anode and the organic light-emitting layer are located in the light-emitting area; and the display element is prepared A cathode, the cathode passes through the light-emitting area from the circuit control area, the cathode is at least partially removed in the peripheral area to form an escape area that allows light to pass through, and the cathode is electrically conductive with the auxiliary Layer electrical connection.

Optionally, the method further includes: preparing a base substrate with the circuit control area, light-emitting area and peripheral area on the base substrate; depositing a number of thin film transistors in the circuit control area of the base substrate, Forming a control circuit for controlling the organic light emitting unit; forming a flat layer on the base substrate on which a number of the thin film transistors are deposited; and preparing the anode and auxiliary conductive layer of the display element includes: on the flat layer The anode is formed at a position corresponding to the light-emitting area, and the auxiliary conductive layer is formed at a position corresponding to the control circuit on the flat layer.

Optionally, in the circuit control area, the flat layer is further formed with a boss supporting the auxiliary conductive layer.

Optionally, the method further includes: preparing a pixel defining layer on a flat layer covered with the anode and the auxiliary conductive layer, the pixel defining layer has an opening, and the auxiliary conductive layer passes through the opening and The cathode is connected.

Optionally, the preparation of the organic light emitting unit of the display element includes: depositing the organic light emitting unit on the upper surface of the anode; the preparation of the cathode of the display element includes: depositing the organic light emitting unit on the upper surface of the organic light emitting unit. The cathode is connected to the auxiliary conductive layer.

In the OLED display panel provided by the embodiments of the present application, the cathode in the peripheral area is patterned through an evaporation mask, so that the area of the cathode in the peripheral area is reduced, and at the same time, in order to prevent the patterned cathode from being too high in the conduction process. As a result of the uneven brightness of the display screen, an additional auxiliary conductive layer connected in series with the cathode is arranged in the circuit control area to increase the contact area of the cathode and reduce the impedance. The finally obtained OLED display panel has good transparency and uniform display screen brightness, which has a good market application prospect.

Description of the drawings

FIG. 1 is a schematic structural diagram of an OLED display panel provided by an embodiment of the present application;

2 is a schematic diagram of the structure of a display element in the OLED display panel of FIG. 1;

3 is a schematic cross-sectional view of the display element in FIG. 2;

4 is a schematic diagram of a series connection of a cathode and an auxiliary conductive layer in an OLED display panel provided by an embodiment of the present application;

FIG. 5 is a schematic flowchart of a manufacturing method of an OLED display panel provided by an embodiment of the present application.

detailed description

In order to make the objectives, solutions, and advantages of the present application clearer, the application will be further described in detail below in conjunction with embodiments. It should be understood that the specific embodiments described herein are only used to explain the application, and not used to limit the application. In addition, the technical features involved in the different embodiments of the application described below can be combined with each other as long as they do not conflict with each other.

1 is a structural diagram of an OLED display panel 100 provided by an embodiment of the present application. The OLED display panel 100 in FIG. 1 has a plurality of display elements 11 including organic light-emitting units, and each display element 11 emits light as a unit pixel. Each display element 11 can be divided into the circuit control area 12, the light-emitting area 13 and the peripheral area 14 as shown in FIG. 2 according to its function.

Among them, the devices in the circuit control area 12 are used to control the light emission of the devices in the light-emitting area 13, and the light emitted from the light-emitting area 13 stimulates the user's visual information and displays images; at the same time, the user can see the OLED display panel through the peripheral area 14. 100 objects behind.

In the embodiment of the present application, the peripheral area 14 of the display element 11 in the unit pixel area is patterned with cathodes, and by arranging an additional auxiliary conductive layer at a reasonable position of the display element 11, the display panel can be maintained with good transparency at the same time. Avoid the problem of uneven picture brightness caused by too high cathode impedance.

For the convenience of description, the structure of the OLED display panel 100 is described below by taking the structure of one of the unit pixels in the OLED display panel 100 as an example. Wherein, the OLED display panel 100 includes a display element 11 and the auxiliary conductive layer 15 shown in FIG. 3. The auxiliary conductive layer 15 is incorporated in the display element 11 to describe the solution below.

Please refer to FIG. 3, which is a schematic cross-sectional view of a display element 11 provided by an embodiment of the present application. As shown in FIG. 3, the display element 11 includes: a base substrate 111, a thin film transistor 112, a flat layer 113, an anode 114, a pixel definition layer 115, an organic light emitting unit 116 and a cathode 117.

The base substrate 111 is the supporting structure of the OLED display panel 100, has a corresponding thickness and transparency, and supports other devices of the OLED display panel 100. The base substrate 111 can be a transparent material with a certain hardness or flexibility. Prepared, for example, polyimide, transparent glass, etc.

Among them, the upper surface 1111 of the base substrate 111 is sequentially divided into the circuit control area 12, the light emitting area 13, and the peripheral area 14 as shown in FIG. 1 according to its functions.

The thin film transistor 112 is disposed in the circuit control area 12. Specifically, the thin film transistor 112 is deposited on the upper surface 1111 of the base substrate 111. The thin film transistor 112 is generally composed of multiple film layers, for example, it may include: Multiple film layers such as the gate electrode, the source electrode, and the drain electrode form the thin film transistor 112 together.

The flat layer 113 is disposed on the upper surface 1111 of the base substrate 111 on which the thin film transistors 112 are deposited, and is used to support the anode 114.

The base substrate 111 and the thin film transistor 112 are fully covered.

In this embodiment, the flattening layer 113 is made of a material with certain fluidity and viscosity, and it can be made of a resin material, such as photoresist, for flattening the film with a multilayer film structure. Transistor 112.

The thin film transistor 112 is electrically connected to the anode 114 and the cathode 117 to form a control circuit for controlling the organic light emitting unit 116 to emit light. The organic light-emitting unit 116 is laminated between the anode 114 and the cathode 117, and the anode 114 and the organic light-emitting unit 116 are located in the light-emitting area 13 and emit light under the driving of the thin film transistor 112.

Wherein, the organic light-emitting unit 116 can be prepared by using organic light-emitting materials commonly used in the art, which can include one or more of an electron transport layer, an electron injection layer, a hole transport layer, and a hole injection layer.

The difference from the cathode in the traditional technology is that the cathode 117 in the embodiment of the present application does not cover the entire surface of the OLED display panel, but passes through the light-emitting area 13 from the circuit control area 12, and the cathode 117 At least part of the peripheral area 14 is removed to form an escape area that allows light to pass through.

The avoidance area is a number of hollow areas formed on the cathode 117 by a photomask process when the cathode 117 is vapor-deposited in the peripheral area 14, and the hollow portions are formed to allow light to pass through. Preferably, the peripheral area 14 can also be made of a transparent material, so that the peripheral area 14 is a transparent area through which light can pass.

The cathode 117 is at least partially removed in the peripheral area 14 to form a avoidance area that allows light to pass through. Compared with the conventional technology, it reduces the area of the cathode 117 in the peripheral area 14 and increases the light transmittance rate. , So that the OLED display panel 100 has better transparency.

4, in the OLED display panel 100, the cathode 117 in each unit pixel is connected to the auxiliary conductive layer 15, and the auxiliary conductive layer 15 connects all the cathodes 117 in the OLED display panel 100 in series. This can increase the conduction efficiency of the cathode 117 and reduce the conduction resistance of the cathode.

Wherein, the auxiliary conductive layer 15 is partially located under the cathode 117 and includes a first region 151 connected to the cathode 117, which can be made of a single-layer metal conductor, a multilayer metal conductor, or a multilayer non-metal conductor.

In some embodiments, the auxiliary conductive layer 15 further includes a second region 152 higher than the cathode 117 and connected to the first region 151.

Since the light of the organic light emitting unit 116 is emitted from the light emitting area 13 and the peripheral area 14 is used for the observer to see the object on the back of the display panel through the OLED display panel 100, the cathode 117 forms a patterned structure. At the same time, in the embodiment of the present application, the auxiliary conductive layer 15 is disposed in the circuit control area 12, and the auxiliary conductive layer 15 can be electrically connected to the cathode 117 in the circuit control area 12, reducing the cost of the cathode 117. The conductive impedance makes the brightness of the screen displayed by the OLED display panel 100 uniform.

The addition of the auxiliary conductive layer 15 can compensate for the uneven display of the brightness of the screen caused by the partial removal of the cathode 117 in the peripheral area 14, so that the OLED display panel 100 has better transparency, The brightness of the display screen can be kept uniform.

The pixel defining layer 115 is used to define the organic light emitting unit 116 and is formed on the flat layer 113. The pixel defining layer 115 is provided with an opening 1151, and the auxiliary conductive layer 15 passes through the opening 1151 and the The cathode 117 is electrically connected.

The auxiliary conductive layer 15 is electrically connected to the cathode 117 in the circuit control area 12 to extend the contact area of the cathode 117 so that the OLED display panel 100 has a display screen with uniform brightness.

In the embodiment of the present application, the base substrate 111, the flat layer 113, the pixel definition layer 115, the anode 114, the organic light-emitting unit 116, and the cathode 117 together constitute the OLED display panel 100 The display element 11 is used to emit light and display images; and the base substrate 111, the flat layer 113 and the pixel definition layer 115 interact to support the anode 114, the organic light emitting unit 116 and The cathode 117. In some embodiments, the structure of the base substrate 111, the flat layer 113, and the pixel definition layer 115 can also be omitted or appropriately changed, as long as the anode 114 and the organic light emitting unit 116 can be supported. And the cathode 117.

In some implementation examples, the cathode 117 has a patterned structure in the circuit control area 12. The patterned structure is a number of hollow areas formed on the cathode through a photomask process when the cathode 117 is vapor-deposited in the circuit control area 12.

In some embodiments, the auxiliary conductive layer 15, as shown in FIG. 4, includes a plurality of conductive lines arranged in a grid shape, and the conductive lines are connected in series with the patterned cathode 117 of the display panel 100 to The cathode impedance is reduced to improve the display effect of the display panel.

In some embodiments, as shown in FIG. 3, in the circuit control area 12, the flat layer 113 is further formed with a boss 1131 that supports the auxiliary conductive layer 15, and the auxiliary conductive layer 15 partially covers all The top surface of the boss 1131.

Traditional technology needs to provide a light shielding layer with a convex structure above the thin film transistor. The light shielding layer is used to support the vapor-deposited photomask when the cathode is photoetched to avoid bending of the photomask and unable to completely shield the thin film transistor. .

In the embodiment of the present application, step surfaces with different levels can be formed on the boss 1131 to form the highest point of the structure, which is used to support the vapor deposition mask to play the same role as the light shielding layer. Specifically, the top surface of the step 113 includes at least two step surfaces with different heights, and at least a part of each step surface is covered by the auxiliary conductive layer 15.

In this way, the manufacturing process related to the light shielding layer can be reduced, and only the flat layer needs to be directly produced.

Please refer to FIG. 3, which shows that the top surface of the boss 1131 is composed of two stepped surfaces of different heights (here named as the first stepped surface 1132 and the second stepped surface 1133), and the auxiliary conductive layer 15 At least partially covering the first step surface 1132 and the second step surface 1133. The second step surface 1133 is used to support the vapor deposition mask. In other embodiments, the top surface may also be composed of other suitable number of step surfaces, and is not limited to the first step surface 1132 and the second step surface 1133 in FIG. 3.

Preferably, a halftone photolithography process can be used to make different height differences in the circuit control area 12 to form the boss 1131.

In some embodiments, the auxiliary conductive layer 15 partially covers the boss 1131. The advantage of the auxiliary conductive layer 15 being arranged in this way is that the boss 1131 is the highest point of the flat layer 113, and the auxiliary conductive layer 15 The conductive layer 15 partially covers the boss 1131 to realize that the auxiliary conductive layer 15 is relatively far away from the thin film transistor 112 in the light emission direction, which can avoid the current conduction process due to the auxiliary conductive layer. The short distance between 15 and the thin film transistor 112 generates parasitic capacitance, which causes a voltage drop during the conduction process and affects the luminous efficiency of the OLED display panel 100.

In the embodiment of the present application, the auxiliary conductive layer 15 and the anode 114 are both conductive metals. In order to simplify the manufacturing process, in some embodiments, the auxiliary conductive layer 15 and the anode 114 may be in the same Manufactured in a photolithography process, the auxiliary conductive layer 15 and the anode 114 can be made of the same metal material, the metal material can be copper, aluminum, aluminum alloy, silver, silver alloy, molybdenum, molybdenum alloy, titanium One or more of them.

In some embodiments, the display element 11 further includes an encapsulation layer 118 as shown in FIG. 3, the encapsulation layer 118 is deposited on the upper surface of the cathode 117, and covers the circuit control area 12, the light emitting Zone 13 and the peripheral zone 14. The encapsulation layer 118 isolates the circuit control area of the OLED display panel 100 from the outside, and prevents air and the like from corroding the circuit, resulting in degradation of the performance of the OLED display panel.

Compared with the traditional OLED display panel, the cathode is a whole cathode covering the control area, the light-emitting area and the peripheral area. Although the entire surface of the cathode covers the peripheral area, the area of the cathode can be increased to make the screen brightness of the OLED display panel uniform, but This will reduce the transmittance of the peripheral area (light needs to pass through the cathode in the peripheral area). In the OLED display panel provided by the embodiment of the application, the cathode in the peripheral area is patterned through an evaporation mask, so that the peripheral area The area of the cathode is reduced. At the same time, in order to prevent the patterned cathode from being too high impedance during the conduction process, the brightness of the display screen will not be uneven, and it is set in the circuit control area (the circuit control area does not require light to pass through). An auxiliary conductive layer connected in series with the cathode is additionally used to reduce impedance. The finally obtained OLED display panel has good transparency and uniform display screen brightness, which has a very good application market.

The embodiment of the present invention also provides a method for manufacturing an OLED display panel, which can prepare the OLED display panel 100 having the auxiliary conductive layer 15 disclosed in the above embodiment. FIG. 5 is a flowchart of a preparation method provided by an embodiment of the present invention. As shown in FIG. 5, the method includes the following steps:

41. Provide a base substrate, and fabricate a thin film transistor on the base substrate.

The base substrate has a certain thickness and transparency, and is used to support the devices on its upper surface. The base substrate can be made of a transparent material with certain hardness or flexibility, for example, glass, polyimide, etc.

The upper surface of the base substrate is divided into a circuit control area, a light-emitting area and a peripheral area according to its functions.

A thin film transistor is prepared in the circuit control area of the base substrate, and the thin film transistor acts as a driving switch to drive the organic light emitting unit to emit light in the OLED display panel.

Among them, the thin film transistor on the base substrate is generally composed of multiple film layers, which may include: gate, source, drain and other film layers.

42. Fabricate a flat layer above the thin film transistor.

The flat layer can be made of organic or inorganic transparent materials with certain fluidity and viscosity. The organic materials can be resin materials, such as photoresist, polyimide, acrylic, etc., and inorganic materials can be selected such as SiOx, SiNx. , SiON and other preparations, used to planarize thin film transistors.

In this step, the flattening layer needs to fully cover the base substrate and the thin film transistor. The specific production steps are as follows: firstly, a flat layer film is formed on the base substrate and the thin film transistor, and then a certain pattern is etched on each area of the flat layer film.

Among them, in the circuit control area, it is necessary to make two protrusion structures with different levels on the flat layer through a halftone photolithography process. The lower level is used for the subsequent pixel definition layer to define the light-emitting area, and the higher level (flat layer) The highest point of the structure) forms a raised shading part for supporting the mask. The photolithography and halftone photolithography process includes: coating photoresist, exposure and development processes. The raised light-shielding portion provided on the flat layer is used to provide support for the vapor deposition mask during subsequent vapor deposition of the cathode.

43. An anode and an auxiliary conductive layer are formed on the flat layer.

Select one or more layers of metal materials to form a conductive film in the circuit control area and the light-emitting area above the flat layer, and pattern the conductive film to form an anode in the light-emitting area and an auxiliary conductive layer in the circuit control area; Area, the auxiliary conductive layer partially covers the highest point of the flat layer.

Here, the auxiliary conductive layer and the anode are made of the same material, and the patterning treatment includes: coating photoresist, exposure, development, and etching. The metal material can be one or more of copper, aluminum, aluminum alloy, silver, silver alloy, molybdenum, molybdenum alloy, and titanium.

In other implementations, the anode and the auxiliary conductive layer can also be made of different conductive materials. If different conductive materials are selected, conductive films can be laid on the circuit control area and the light-emitting area above the flat layer, and patterned. .

44. Form a pixel definition layer on the flat layer.

The material selection of the pixel definition layer is the same as the material selection of the above-mentioned flat layer, and will not be repeated here. On the flat layer covered with the anode and the auxiliary conductive layer, a pixel definition layer film is formed, and then the part of the pixel definition layer film placed on the surface of the auxiliary conductive layer and the part located in the light-emitting area are patterned to be on the pixel definition layer A recess for arranging the organic light emitting unit and an opening for exposing the auxiliary conductive layer are formed. The patterning treatment here includes: coating photoresist, exposure and development and other processes.

45. Inkjet a solution of organic light-emitting material to the pixel definition layer to form an organic light-emitting unit in the light-emitting area.

The material used in the organic light-emitting unit is sprayed on the anode to cover the anode by inkjet printing technology to form the organic light-emitting unit in the light-emitting area.

46. A cathode is formed on the organic light-emitting unit.

A fine metal mask (Fine Metal Mask) is covered on the upper surface of the organic light-emitting unit and the pixel definition layer. There are a series of voids on the fine metal mask, and the voids form the same pattern as the patterned structure of the cathode.

Then, a metal film layer is plated on the surface of the fine metal mask by vapor deposition. Finally, after the fine photomask is removed, the corresponding metal conductive film layer will be left in the gap of the fine metal photomask, and a patterned structure for improving the transmittance is formed in the peripheral area.

47. Prepare an encapsulation layer on the cathode and the pixel definition layer.

The encapsulation layer is used to fully cover and encapsulate each layer of the prepared OLED display panel. The encapsulation layer 118 is formed on the cathode and the pixel definition layer to isolate the circuit control area of the OLED display panel 100 from the outside, preventing air from causing the circuit Corrosion causes the performance of the OLED display panel to decrease.

In the method for manufacturing the OLED display panel provided by the embodiments of the present application, the cathode in the peripheral area is patterned through an evaporation mask, so that at least part of the peripheral area is removed to form an avoidance area that allows light to pass through. The area of the cathode decreases and the light transmittance increases. At the same time, in order to avoid the phenomenon that the patterned cathode will not cause uneven brightness of the display screen due to the high impedance during the conduction process, an additional cathode string is provided in the circuit control area (the circuit control area does not require light to pass through) The auxiliary conductive layer is connected to increase the contact area of the cathode and reduce the impedance. The finally obtained OLED display panel has good transparency and uniform display screen brightness, which has a good application market.

Wherein, the manufacturing method flow shown in FIG. 5 is only used to illustrate the manufacturing process of an OLED display panel with a typical structure. Those skilled in the art can understand that, depending on the structure of the OLED display panel to be prepared, one or more of the process steps can be reduced or combined, and the process or process used in one or more of the processes can be reduced or combined. Materials are adjusted or replaced.

All preparation methods formed by a combination of reductions, additions, adjustments or replacements are obtained by those skilled in the art based on the inventive idea of preparing the auxiliary conductive layer provided in the embodiments of the present invention and can be obtained through logical reasoning.

Based on the preparation method disclosed in the embodiment of the present invention, in order to realize the structure of the auxiliary conductive layer, at least the process steps of cathode patterning and preparation of the auxiliary conductive layer are retained in the manufacturing process. That is, the steps of preparing the anode and auxiliary conductive layer of the display element, and preparing the organic light emitting unit and the cathode of the display element.

The above are only examples of this application, and do not limit the scope of this application. Any equivalent structure or equivalent process transformation made using the content of the description and drawings of this application, or directly or indirectly applied to other related technologies In the same way, all fields are included in the scope of patent protection of this application.

Claims

An OLED display panel, characterized by comprising:

A display element, the display element having a circuit control area, a light emitting area and a peripheral area;

The display element includes an anode, an organic light emitting unit, and a cathode stacked in sequence,

The anode and the organic light-emitting unit are located in the light-emitting area, the cathode passes through the light-emitting area from the circuit control area, and the cathode is at least partially removed in the peripheral area to allow light Avoidance area through;

An auxiliary conductive layer, the auxiliary conductive layer is arranged in the circuit control area, and is electrically connected to the cathode.
The display panel of claim 1, wherein the peripheral area is a transparent area through which light can pass.
The display panel according to claim 1, wherein the auxiliary conductive layer comprises a first area located under and connected to the cathode.
3. The display panel of claim 3, wherein the auxiliary conductive layer further comprises a second area higher than the cathode and connected to the first area.
The display panel according to claim 1, wherein the display panel further comprises a flat layer supporting the anode, and in the circuit control area, the flat layer is further formed with a supporting conductive layer. Boss.
The display panel according to claim 5, wherein the display panel further comprises a pixel definition layer formed on the flat layer, the pixel definition layer has an opening, and the auxiliary conductive layer passes through the opening and The cathode is connected.
7. The display panel of claim 6, wherein the auxiliary conductive layer is connected in series with the cathode.
7. The display panel of claim 5, wherein the top surface of the boss comprises at least two stepped surfaces with different heights, and at least a part of each of the stepped surfaces is covered by the auxiliary conductive layer.
The display panel according to claim 1, wherein the auxiliary conductive layer comprises a plurality of conductive wires arranged in a grid shape, and the conductive wires are connected in series with the patterned cathode of the display panel.
The display panel of claim 1, wherein the auxiliary conductive layer and the anode are fabricated in the same photolithography process.
The display panel according to claim 1, wherein the auxiliary conductive layer and the anode are fabricated through different photolithography processes.
The display panel of claim 1, wherein the auxiliary conductive layer is made of a single-layer metal conductor, a multi-layer metal conductor, or a multi-layer non-metal conductor.
The display panel of claim 1, wherein the display element further comprises:

The encapsulation layer is deposited on the upper surface of the cathode and covers the circuit control area, the light-emitting area and the peripheral area.
A method for manufacturing an OLED display panel is characterized in that it comprises:

Preparing an anode and an auxiliary conductive layer of a display element, the display element including a circuit control area, a light-emitting area and a peripheral area, and the auxiliary conductive layer is prepared in the circuit control area;

Preparing an organic light emitting unit of a display element, the anode and the organic light emitting layer are located in the light emitting area; and

A cathode of a display element is prepared. The cathode passes through the light-emitting area from the circuit control area, and the cathode is at least partially removed in the peripheral area to form an escape area that allows light to pass through. The auxiliary conductive layer is electrically connected.
The preparation method according to claim 14, wherein the peripheral area is a peripheral area through which light can pass.
15. The preparation method according to claim 15, wherein the auxiliary conductive layer comprises a first area located under and connected to the cathode.
16. The manufacturing method according to claim 16, wherein the auxiliary conductive layer further comprises a second region higher than the cathode and connected to the first region.
The preparation method according to claim 17, wherein the method further comprises:

Preparing a base substrate with the circuit control area, light-emitting area and peripheral area on the base substrate;

Depositing a number of thin film transistors in the circuit control area of the base substrate to form a control circuit for controlling the organic light emitting unit;

Forming a flat layer supporting the anode on a base substrate on which a plurality of the thin film transistors are deposited;

The preparation of the anode and auxiliary conductive layer of the display element includes:

The anode is formed on the flat layer at a position corresponding to the light-emitting area, and the auxiliary conductive layer is formed on the flat layer at a position corresponding to the control circuit.
18. The manufacturing method according to claim 18, wherein in the circuit control area, the flat layer is further formed with a boss supporting the auxiliary conductive layer.
The preparation method of claim 19, wherein the method further comprises:

On the flat layer covered with the anode and the auxiliary conductive layer, a pixel defining layer is prepared, the pixel defining layer is opened with an opening, and the auxiliary conductive layer is connected to the cathode through the opening.

The pixel defining layer is formed with a recess for arranging the organic light emitting unit and an opening exposing a portion of the auxiliary conductive layer.
The manufacturing method according to claim 14, wherein the preparation of the organic light emitting unit of the display element comprises: depositing the organic light emitting unit on the upper surface of the anode;

The preparation of the cathode of the display element includes: depositing and forming the cathode on the upper surface of the organic light emitting unit, and the cathode is electrically connected to the auxiliary conductive layer.