WO2020192148A1 - Packaging method for wafer-level infrared detection chip - Google Patents

Packaging method for wafer-level infrared detection chip Download PDF

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Publication number
WO2020192148A1
WO2020192148A1 PCT/CN2019/119690 CN2019119690W WO2020192148A1 WO 2020192148 A1 WO2020192148 A1 WO 2020192148A1 CN 2019119690 W CN2019119690 W CN 2019119690W WO 2020192148 A1 WO2020192148 A1 WO 2020192148A1
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infrared detection
detection chip
temperature
metal layer
wafer
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PCT/CN2019/119690
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French (fr)
Chinese (zh)
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林明芳
陈俊宇
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江苏鼎茂半导体有限公司
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Publication of WO2020192148A1 publication Critical patent/WO2020192148A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration

Definitions

  • the invention relates to the field of infrared chip packaging, in particular to a packaging method of a wafer-level infrared detection chip.
  • infrared image sensors include infrared detection chips, and the commonly used packaging method of infrared detection chips is ceramic packaging.
  • Figure 1 it is a schematic diagram of dismissal in traditional infrared packaging technology.
  • the ceramic package includes a ceramic base, a metal upper cover and an optical window, which form a vacuum cavity; an infrared detector chip is installed on the ceramic base, and at the same time Installed with getter, the optical window is plated with infrared green light film.
  • When packaging heat the optical window/metal cover/ceramic base at high temperature in a vacuum environment, and activate the getter, and then put the optical window/metal cover /Ceramic base, welded together with solder sheet.
  • the technology of ceramic packaging requires a larger ceramic package, that is, the above-mentioned ceramic base, which is used to place the infrared detector chip, and is connected with a gold wire as a connection.
  • An optical window or metal is provided above the ceramic package.
  • the cover has an optical window, and the package size is about 20*20mm.
  • the size is getting smaller and smaller, and the size of the solder sheet has also become smaller.
  • the deformation of the solder sheet has increased significantly, and the process pick-and-place material at the package end also has this deformation problem.
  • the size is to continue to shrink, it will encounter problems such as too small size of the solder sheet, manufacturing difficulties for manufacturers, and difficulty for personnel to pick and place during production, and the solder is easily deformed and cannot be aligned.
  • the technical problem to be solved by the present invention is to provide a wafer-level infrared detection chip packaging method, which is suitable for wafer-level infrared detection chip packaging with high precision and high yield.
  • the present invention provides a wafer-level infrared detection chip packaging method, based on a vacuum reflow soldering machine, the vacuum reflow soldering machine includes an upper cavity and a lower cavity, the upper cavity and the lower cavity A shutter is set between the cavities, including the following steps:
  • Step 1 The infrared detection chip includes a photosensitive area, a metalized area is arranged around the photosensitive area, and a metal layer is arranged on the metalized area;
  • Step 2 Put a first material into the upper cavity.
  • the first material includes an infrared detection chip with a metal layer, and the infrared detection chip faces down; then the upper cavity is heated to a first temperature and Insulation
  • Step 3 Put a second material into the lower cavity, the second material includes an optical window and a getter, and then the lower cavity sequentially degass and activates the second material;
  • Step 4 When the shutter is opened, the vacuum reflow soldering machine is heated to the soldering temperature and kept warm; the soldering temperature is the melting point of the metal layer; the metal layer melts at the soldering temperature, and the molten metal layer Combine the infrared detection chip with the optical window;
  • Step 5 The vacuum reflow soldering machine stops heating, cools naturally to room temperature, and then takes out the finished product.
  • a metal layer is provided in the metallization zone, which specifically includes: the metal layer is a metal film layer, and the metal film layer is formed by coating, sputtering or spraying.
  • a metal layer is provided in the metallization zone, which specifically includes: the metal layer is a metal ball layer, and the metal ball layer includes a plurality of metal balls.
  • the metal balls are evenly distributed in the metallized area.
  • the upper cavity is heated to a first temperature and kept warm, the first temperature is in the range of 150-220°C, and the heat preservation time is 6-72hr.
  • the lower cavity sequentially performs degassing treatment and activation treatment on the second material, wherein the temperature of the degassing treatment is 120-200°C, and the time of the degassing treatment is 3-12hr; the temperature of the activation treatment is 300-450°C, and the time of the activation treatment is 5-90min.
  • step 4 the vacuum reflow soldering machine is heated to the soldering temperature and kept warm, the soldering temperature is 180-225°C, and the soldering time is 5-30 min.
  • the metal layer is a gold-tin alloy or an indium-silver alloy.
  • the present invention grows a metal layer in the metallized area, and the metal layer will melt in the subsequent heating process, so that the material in the upper cavity is combined with the material in the lower cavity to complete the packaging of the infrared detection chip with precision High, high yield rate, suitable for wafer-level chip packaging.
  • the present invention does not need to use a separate solder sheet, which solves the problem that the solder is easily deformed and cannot be accurately aligned.
  • the metal layer is directly grown on the chip, which is beneficial to reduce the size of the infrared detector to meet the needs of the times.
  • FIG. 1 is a schematic diagram of the structure of a traditional package in the background art
  • Figure 2 is a schematic view of the structure of the metallized area coated with a metal film
  • Figure 3 is a schematic diagram of the structure of laying metal balls in the metallized area.
  • the present invention discloses a wafer-level infrared detection chip packaging method, based on a vacuum reflow soldering machine, the vacuum reflow soldering machine includes an upper cavity and a lower cavity, the upper cavity A shutter is arranged between the body and the lower cavity, which includes the following steps:
  • Step 1 The infrared detection chip 4 includes a photosensitive area 2, a metalized area 3 is arranged around the photosensitive area 2, and a metal layer is arranged on the metalized area 3. Two rows of gold-plated solder pads 1 are arranged on the infrared detection chip 4, and the metallized area 3 is located between the two rows of gold-plated solder pads.
  • the metal layer is gold tin alloy or indium silver alloy.
  • the material of the metal layer can be selected according to the temperature resistance of the chip and the requirements of the manufacturing process.
  • the metal layer can be a metal film layer or a metal ball layer.
  • the metal layer is a metal film layer
  • the metal film layer is formed by coating, sputtering or spraying, that is, a metal film layer is plated on the metalized area.
  • a mask can be used to cover the area outside the metallized area to prevent the area outside the metallized area from being contaminated, thereby ensuring the coating accuracy.
  • the metal layer is a metal ball layer, and the metal ball layer includes a plurality of metal balls 5.
  • the metal balls are evenly attached to the metalized area 3, and the metal balls 5 will spread after melting and squeezing.
  • Step 2 Put a first material into the upper cavity.
  • the first material includes an infrared detection chip with a metal layer, and the infrared detection chip faces down; then the upper cavity is heated to a first temperature and Keep warm.
  • the range of the first temperature is 150-220°C, and the holding time is 6-72hr.
  • Step 3 Put a second material into the lower cavity, the second material includes an optical window and a getter, and then the lower cavity sequentially performs degassing and activation processing on the second material.
  • the temperature of the degassing treatment is 120-200°C, and the time of the degassing treatment is 3-12hr; the temperature of the activation treatment is 300-450°C, and the time of the activation treatment is 5 -90min.
  • Step 4 When the shutter is opened, the vacuum reflow soldering machine is heated to the soldering temperature and kept warm; the soldering temperature is the melting point of the metal layer; the metal layer melts at the soldering temperature, and the molten metal layer Combine the infrared detection chip with the optical window.
  • the vacuum reflow soldering machine is heated to the soldering temperature and kept warm, the soldering temperature is 180-225°C, and the soldering time is 5-30 min.
  • the surface of the optical window is provided with an area matching the size and shape of the metallized area, and when the metal layer melts, the optical window and the infrared detection chip are combined together.
  • Step 5 The vacuum reflow soldering machine stops heating, cools naturally to room temperature, and then takes out the finished product.
  • Steps 1 to 4 of the present invention are all carried out in a vacuum environment, and step 5 continues to vacuum during the natural cooling process.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Radiation Pyrometers (AREA)

Abstract

Disclosed in the present invention is a packaging method for a wafer-level infrared detection chip, comprising the following steps: step I, providing a metal layer in a metallized region of an infrared detection chip; step II, placing a first material in an upper cavity, the first material comprising the infrared detection chip having the metal layer, and then heating the upper cavity to a first temperature and maintaining the temperature; step III, placing a second material in a lower cavity, the second material comprising an optical window and a getter, and then sequentially performing degassing treatment and activation treatment on the second material in the lower cavity; step IV, opening a shielding plate, heating a vacuum reflow welding machine to a welding temperature, and maintaining the temperature, the welding temperature being a melting point of the metal layer, the metal layer being molten at the welding temperature, and the infrared detection chip and the optical window being combined together by the molten metal layer; and step V, stopping heating the vacuum reflow welding machine, naturally cooling to room temperature, and taking out a finished product. The method is applicable to packaging of a wafer-level infrared detection chip, high in precision, and high in yield of the finished product.

Description

一种晶圆级红外探测芯片的封装方法Packaging method of wafer-level infrared detection chip 技术领域Technical field
本发明涉及红外芯片封装领域，具体涉及一种晶圆级红外探测芯片的封装方法。The invention relates to the field of infrared chip packaging, in particular to a packaging method of a wafer-level infrared detection chip.
背景技术Background technique
目前，红外影像传感器包括红外探测芯片，常用的红外探测芯片的封装方法是陶瓷封装。如图1所示，为传统红外封装技术中解雇示意图，陶瓷封装包括陶瓷基座、金属上盖和光学窗口,三者组成一个真空腔体；在陶瓷基座上安装有红外探测器芯片,同时安装有吸气剂,在光学窗口上镀有红外线绿光膜，封装时，在真空环境下高温加热光学窗口/金属上盖/陶瓷底座,并激活吸气剂,再将光学窗口/金属上盖/陶瓷底座,用焊料片熔接再一起。陶瓷封装的技术,需要一个较大的陶瓷管壳，即上述的陶瓷基座,用于放置红外探测器芯片,并连接着金线作为连接,陶瓷管壳的上方设置有光学窗或是金属上盖带有光学窗,这样的封装尺寸大约在20*20mm。由于红外探测器已发展到晶圆级封装,尺寸越来越小,焊料片尺寸同样跟着变小,如此造成焊料片生产的变形不良大幅增加,封装端的制程取放材料也同样有这个变形问题。当尺寸要再继续缩小时,会遇到焊料片尺寸过小,厂商制作困难,且生产时人员难以取放,焊料很容易变形无法对位等问题。At present, infrared image sensors include infrared detection chips, and the commonly used packaging method of infrared detection chips is ceramic packaging. As shown in Figure 1, it is a schematic diagram of dismissal in traditional infrared packaging technology. The ceramic package includes a ceramic base, a metal upper cover and an optical window, which form a vacuum cavity; an infrared detector chip is installed on the ceramic base, and at the same time Installed with getter, the optical window is plated with infrared green light film. When packaging, heat the optical window/metal cover/ceramic base at high temperature in a vacuum environment, and activate the getter, and then put the optical window/metal cover /Ceramic base, welded together with solder sheet. The technology of ceramic packaging requires a larger ceramic package, that is, the above-mentioned ceramic base, which is used to place the infrared detector chip, and is connected with a gold wire as a connection. An optical window or metal is provided above the ceramic package. The cover has an optical window, and the package size is about 20*20mm. As infrared detectors have been developed to wafer-level packaging, the size is getting smaller and smaller, and the size of the solder sheet has also become smaller. As a result, the deformation of the solder sheet has increased significantly, and the process pick-and-place material at the package end also has this deformation problem. When the size is to continue to shrink, it will encounter problems such as too small size of the solder sheet, manufacturing difficulties for manufacturers, and difficulty for personnel to pick and place during production, and the solder is easily deformed and cannot be aligned.
发明内容Summary of the invention
本发明要解决的技术问题是提供一种晶圆级红外探测芯片的封装方法，其适用于晶圆级红外探测芯片封装，精度高，成品良率高。The technical problem to be solved by the present invention is to provide a wafer-level infrared detection chip packaging method, which is suitable for wafer-level infrared detection chip packaging with high precision and high yield.
为了解决上述技术问题，本发明提供了一种晶圆级红外探测芯片的封装方法，基于真空回流焊接机，所述真空回流焊接机包括上腔体和下腔体，所述上腔体与下腔体间设置有遮板，包括以下步骤：In order to solve the above technical problems, the present invention provides a wafer-level infrared detection chip packaging method, based on a vacuum reflow soldering machine, the vacuum reflow soldering machine includes an upper cavity and a lower cavity, the upper cavity and the lower cavity A shutter is set between the cavities, including the following steps:
步骤一、红外探测芯片包括感光区，环绕所述感光区设置有金属化区，在所述金属化区设置金属层；Step 1: The infrared detection chip includes a photosensitive area, a metalized area is arranged around the photosensitive area, and a metal layer is arranged on the metalized area;
步骤二、向所述上腔体内放入第一材料，所述第一材料包括具有金属层的红外探测芯片，所述红外探测芯片正面朝下；之后所述上腔体升温至第一温度并保温；Step 2: Put a first material into the upper cavity. The first material includes an infrared detection chip with a metal layer, and the infrared detection chip faces down; then the upper cavity is heated to a first temperature and Insulation
步骤三、向所述下腔体内放入第二材料，所述第二材料包括光学窗和吸气剂，之后所述下腔体依次对第二材料做除气处理和激活处理；Step 3: Put a second material into the lower cavity, the second material includes an optical window and a getter, and then the lower cavity sequentially degass and activates the second material;
步骤四、所述遮板打开，所述真空回流焊接机升温至焊接温度并保温；焊接温度即为所述金属层的熔点；所述金属层在所述焊接温度下融化，而融化的金属层将红外探测芯片与光学窗结合在一起； Step 4. When the shutter is opened, the vacuum reflow soldering machine is heated to the soldering temperature and kept warm; the soldering temperature is the melting point of the metal layer; the metal layer melts at the soldering temperature, and the molten metal layer Combine the infrared detection chip with the optical window;
步骤五、所述真空回流焊接机停止加温，自然冷却至常温，之后取出成品。Step 5. The vacuum reflow soldering machine stops heating, cools naturally to room temperature, and then takes out the finished product.
作为优选的，步骤一中在所述金属化区设置有金属层，具体包括：所述金属层为金属膜层，所述金属膜层通过涂布、溅镀或喷涂的方式形成。Preferably, in step one, a metal layer is provided in the metallization zone, which specifically includes: the metal layer is a metal film layer, and the metal film layer is formed by coating, sputtering or spraying.
作为优选的，步骤一中在所述金属化区设置有金属层，具体包括：所述金属层为金属球层，所述金属球层包括多个金属球。Preferably, in step one, a metal layer is provided in the metallization zone, which specifically includes: the metal layer is a metal ball layer, and the metal ball layer includes a plurality of metal balls.
作为优选的，所述金属球均匀分布在所述金属化区。Preferably, the metal balls are evenly distributed in the metallized area.
作为优选的，在步骤二中，所述上腔体升温至第一温度并保温，第一温度的范围为150-220℃，保温时间为6-72hr。Preferably, in step 2, the upper cavity is heated to a first temperature and kept warm, the first temperature is in the range of 150-220°C, and the heat preservation time is 6-72hr.
作为优选的，在步骤三中，所述下腔体依次对第二材料做除气处理和激活 处理，其中，所述除气处理的温度为120-200℃，所述除气处理的时间为3-12hr；所述激活处理的温度为300-450℃，所述激活处理的时间为5-90min。Preferably, in step 3, the lower cavity sequentially performs degassing treatment and activation treatment on the second material, wherein the temperature of the degassing treatment is 120-200°C, and the time of the degassing treatment is 3-12hr; the temperature of the activation treatment is 300-450°C, and the time of the activation treatment is 5-90min.
作为优选的，在步骤四中，所述真空回流焊接机升温至焊接温度并保温，焊接温度为180-225℃，焊接时间为5-30min。Preferably, in step 4, the vacuum reflow soldering machine is heated to the soldering temperature and kept warm, the soldering temperature is 180-225°C, and the soldering time is 5-30 min.
作为优选的，在步骤一中，所述金属层为金锡合金或铟银合金。Preferably, in step 1, the metal layer is a gold-tin alloy or an indium-silver alloy.
本发明的有益效果：The beneficial effects of the present invention:
1、本发明在金属化区生长金属层，而金属层在后续的升温加热过程中会融化，从而使得上腔体中的材料与下腔体中的材料结合，完成红外探测芯片的封装，精度高，成品良率高，适用于晶圆级芯片的封装。1. The present invention grows a metal layer in the metallized area, and the metal layer will melt in the subsequent heating process, so that the material in the upper cavity is combined with the material in the lower cavity to complete the packaging of the infrared detection chip with precision High, high yield rate, suitable for wafer-level chip packaging.
2、本发明不需另外使用焊料片，如此解决了焊料很容易变形且无法精准对位的问题，直接在芯片上生长金属层，有利于将红外探测器尺寸做小，适应时代需求。2. The present invention does not need to use a separate solder sheet, which solves the problem that the solder is easily deformed and cannot be accurately aligned. The metal layer is directly grown on the chip, which is beneficial to reduce the size of the infrared detector to meet the needs of the times.
附图说明Description of the drawings
图1为背景技术中传统封装的结构示意图；FIG. 1 is a schematic diagram of the structure of a traditional package in the background art;
图2为金属化区镀有金属膜层的结构示意图；Figure 2 is a schematic view of the structure of the metallized area coated with a metal film;
图3为金属化区铺设金属球的结构示意图。Figure 3 is a schematic diagram of the structure of laying metal balls in the metallized area.
图中标号说明：1、镀金焊垫；2、感光区；3、金属化区；4、红外探测芯片；5、金属球。Explanation of the reference numerals in the figure: 1. Gold-plated soldering pad; 2. Sensitive area; 3. Metallized area; 4. Infrared detection chip; 5. Metal ball.
具体实施方式detailed description
下面结合附图和具体实施例对本发明作进一步说明，以使本领域的技术人员可以更好地理解本发明并能予以实施，但所举实施例不作为对本发明的限定。The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments, so that those skilled in the art can better understand and implement the present invention, but the cited embodiments are not intended to limit the present invention.
参照图2-图3所示，本发明公开了一种晶圆级红外探测芯片的封装方法， 基于真空回流焊接机，所述真空回流焊接机包括上腔体和下腔体，所述上腔体与下腔体间设置有遮板，包括以下步骤：2 to 3, the present invention discloses a wafer-level infrared detection chip packaging method, based on a vacuum reflow soldering machine, the vacuum reflow soldering machine includes an upper cavity and a lower cavity, the upper cavity A shutter is arranged between the body and the lower cavity, which includes the following steps:
步骤一、红外探测芯片4包括感光区2，环绕所述感光区2设置有金属化区3，在所述金属化区3设置金属层。在红外探测芯片4上设置有两排镀金焊垫1，而金属化区3位于两排镀金焊垫之间。Step 1: The infrared detection chip 4 includes a photosensitive area 2, a metalized area 3 is arranged around the photosensitive area 2, and a metal layer is arranged on the metalized area 3. Two rows of gold-plated solder pads 1 are arranged on the infrared detection chip 4, and the metallized area 3 is located between the two rows of gold-plated solder pads.
所述金属层为金锡合金或铟银合金。当然，金属层的材料可以依芯片耐温程度与制程工艺的需求,来选用合适的焊料。The metal layer is gold tin alloy or indium silver alloy. Of course, the material of the metal layer can be selected according to the temperature resistance of the chip and the requirements of the manufacturing process.
本发明中，金属层可为金属膜层或金属球层。In the present invention, the metal layer can be a metal film layer or a metal ball layer.
在实施例一中，如图2所示，所述金属层为金属膜层，所述金属膜层通过涂布、溅镀或喷涂的方式形成，即在金属化区镀一层金属膜层。例如，当使用溅镀的方式在金属化区镀膜时，可使用掩膜将金属化区之外的区域遮盖，避免金属化区之外的区域被污染，从而保证镀膜精度。In the first embodiment, as shown in FIG. 2, the metal layer is a metal film layer, and the metal film layer is formed by coating, sputtering or spraying, that is, a metal film layer is plated on the metalized area. For example, when sputtering is used to coat the metallized area, a mask can be used to cover the area outside the metallized area to prevent the area outside the metallized area from being contaminated, thereby ensuring the coating accuracy.
在实施例二中，如图3所示，所述金属层为金属球层，所述金属球层包括多个金属球5。而所述金属球均匀贴附在所述金属化区3，金属球5在融化和挤压后会扩散。In the second embodiment, as shown in FIG. 3, the metal layer is a metal ball layer, and the metal ball layer includes a plurality of metal balls 5. The metal balls are evenly attached to the metalized area 3, and the metal balls 5 will spread after melting and squeezing.
步骤二、向所述上腔体内放入第一材料，所述第一材料包括具有金属层的红外探测芯片，所述红外探测芯片正面朝下；之后所述上腔体升温至第一温度并保温。在该步骤中，第一温度的范围为150-220℃，保温时间为6-72hr。Step 2: Put a first material into the upper cavity. The first material includes an infrared detection chip with a metal layer, and the infrared detection chip faces down; then the upper cavity is heated to a first temperature and Keep warm. In this step, the range of the first temperature is 150-220°C, and the holding time is 6-72hr.
步骤三、向所述下腔体内放入第二材料，所述第二材料包括光学窗和吸气剂，之后所述下腔体依次对第二材料做除气处理和激活处理。在该步骤中，所述除气处理的温度为120-200℃，所述除气处理的时间为3-12hr；所述激活处理的温度为300-450℃，所述激活处理的时间为5-90min。Step 3: Put a second material into the lower cavity, the second material includes an optical window and a getter, and then the lower cavity sequentially performs degassing and activation processing on the second material. In this step, the temperature of the degassing treatment is 120-200°C, and the time of the degassing treatment is 3-12hr; the temperature of the activation treatment is 300-450°C, and the time of the activation treatment is 5 -90min.
步骤四、所述遮板打开，所述真空回流焊接机升温至焊接温度并保温；焊 接温度即为所述金属层的熔点；所述金属层在所述焊接温度下融化，而融化的金属层将红外探测芯片与光学窗结合在一起。在该步骤中，所述真空回流焊接机升温至焊接温度并保温，焊接温度为180-225℃，焊接时间为5-30min。光学窗的表面设置有与金属化区大小和形状相配合的区域，而当金属层融化时，光学窗与红外探测芯片即结合在一起。 Step 4. When the shutter is opened, the vacuum reflow soldering machine is heated to the soldering temperature and kept warm; the soldering temperature is the melting point of the metal layer; the metal layer melts at the soldering temperature, and the molten metal layer Combine the infrared detection chip with the optical window. In this step, the vacuum reflow soldering machine is heated to the soldering temperature and kept warm, the soldering temperature is 180-225°C, and the soldering time is 5-30 min. The surface of the optical window is provided with an area matching the size and shape of the metallized area, and when the metal layer melts, the optical window and the infrared detection chip are combined together.
步骤五、所述真空回流焊接机停止加温，自然冷却至常温，之后取出成品。Step 5. The vacuum reflow soldering machine stops heating, cools naturally to room temperature, and then takes out the finished product.
本发明步骤一至步骤四皆在真空环境下进行，步骤五在自然冷却的过程中依旧持续抽真空。Steps 1 to 4 of the present invention are all carried out in a vacuum environment, and step 5 continues to vacuum during the natural cooling process.
以上所述实施例仅是为充分说明本发明而所举的较佳的实施例，本发明的保护范围不限于此。本技术领域的技术人员在本发明基础上所作的等同替代或变换，均在本发明的保护范围之内。本发明的保护范围以权利要求书为准。The above-mentioned embodiments are only preferred embodiments for fully explaining the present invention, and the protection scope of the present invention is not limited thereto. The equivalent substitutions or changes made by those skilled in the art on the basis of the present invention are all within the protection scope of the present invention. The protection scope of the present invention is subject to the claims.

Claims (8)

  1. 一种晶圆级红外探测芯片的封装方法，基于真空回流焊接机，所述真空回流焊接机包括上腔体和下腔体，所述上腔体与下腔体间设置有遮板，其特征在于，包括以下步骤：A packaging method for wafer-level infrared detection chips is based on a vacuum reflow soldering machine. The vacuum reflow soldering machine includes an upper cavity and a lower cavity. A shield is provided between the upper cavity and the lower cavity. It consists of the following steps:
    步骤一、红外探测芯片包括感光区，环绕所述感光区设置有金属化区，在所述金属化区设置金属层；Step 1: The infrared detection chip includes a photosensitive area, a metalized area is arranged around the photosensitive area, and a metal layer is arranged on the metalized area;
    步骤二、向所述上腔体内放入第一材料，所述第一材料包括具有金属层的红外探测芯片，所述红外探测芯片正面朝下；之后所述上腔体升温至第一温度并保温；Step 2: Put a first material into the upper cavity. The first material includes an infrared detection chip with a metal layer, and the infrared detection chip faces down; then the upper cavity is heated to a first temperature and Insulation
    步骤三、向所述下腔体内放入第二材料，所述第二材料包括光学窗和吸气剂，之后所述下腔体依次对第二材料做除气处理和激活处理；Step 3: Put a second material into the lower cavity, the second material includes an optical window and a getter, and then the lower cavity sequentially degass and activates the second material;
    步骤四、所述遮板打开，所述真空回流焊接机升温至焊接温度并保温；焊接温度即为所述金属层的熔点；所述金属层在所述焊接温度下融化，而融化的金属层将红外探测芯片与光学窗结合在一起；Step 4. When the shutter is opened, the vacuum reflow soldering machine is heated to the soldering temperature and kept warm; the soldering temperature is the melting point of the metal layer; the metal layer melts at the soldering temperature, and the molten metal layer Combine the infrared detection chip with the optical window;
    步骤五、所述真空回流焊接机停止加温，自然冷却至常温，之后取出成品。Step 5. The vacuum reflow soldering machine stops heating, cools naturally to room temperature, and then takes out the finished product.
  2. 如权利要求1所述的晶圆级红外探测芯片的封装方法，其特征在于，步骤一中在所述金属化区设置有金属层，具体包括：所述金属层为金属膜层，所述金属膜层通过涂布、溅镀或喷涂的方式形成。5. The wafer-level infrared detection chip packaging method according to claim 1, wherein in step one, a metal layer is provided in the metallization area, which specifically includes: the metal layer is a metal film layer, and the metal The film layer is formed by coating, sputtering or spraying.
  3. 如权利要求1所述的晶圆级红外探测芯片的封装方法，其特征在于，步骤一中在所述金属化区设置有金属层，具体包括：所述金属层为金属球层，所述金属球层包括多个金属球。The method for packaging a wafer-level infrared detection chip according to claim 1, wherein in step one, a metal layer is provided in the metallization area, which specifically includes: the metal layer is a metal ball layer, and the metal The ball layer includes a plurality of metal balls.
  4. 如权利要求3所述的晶圆级红外探测芯片的封装方法，其特征在于，所 述金属球均匀分布在所述金属化区。The packaging method of a wafer-level infrared detection chip according to claim 3, wherein the metal balls are evenly distributed in the metalized area.
  5. 如权利要求1所述的晶圆级红外探测芯片的封装方法，其特征在于，在步骤二中，所述上腔体升温至第一温度并保温，第一温度的范围为120-200℃，保温时间为6-72hr。The method for packaging a wafer-level infrared detection chip according to claim 1, wherein in step 2, the upper cavity is heated to a first temperature and kept warm, and the first temperature ranges from 120 to 200°C, The holding time is 6-72hr.
  6. 如权利要求1所述的晶圆级红外探测芯片的封装方法，其特征在于，在步骤三中，所述下腔体依次对第二材料做除气处理和激活处理，其中，所述除气处理的温度为120-200℃，所述除气处理的时间为3-12hr；所述激活处理的温度为300-450℃，所述激活处理的时间为5-90min。The method for packaging a wafer-level infrared detection chip according to claim 1, wherein in step three, the lower cavity sequentially performs degassing treatment and activation treatment on the second material, wherein the degassing The temperature of the treatment is 120-200°C, the time of the degassing treatment is 3-12hr; the temperature of the activation treatment is 300-450°C, and the time of the activation treatment is 5-90min.
  7. 如权利要求1所述的晶圆级红外探测芯片的封装方法，其特征在于，在步骤四中，所述真空回流焊接机升温至焊接温度并保温，焊接温度为180-225℃，焊接时间为5-30min。The method of packaging a wafer-level infrared detection chip according to claim 1, wherein in step 4, the vacuum reflow soldering machine is heated to a soldering temperature and kept warm, the soldering temperature is 180-225°C, and the soldering time is 5-30min.
  8. 如权利要求1所述的晶圆级红外探测芯片的封装方法，其特征在于，在步骤一中，所述金属层为金锡合金或铟银合金。The packaging method of a wafer-level infrared detection chip according to claim 1, wherein in step one, the metal layer is a gold-tin alloy or an indium-silver alloy.
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Publication number Priority date Publication date Assignee Title
CN110047858B (en) * 2019-03-25 2020-12-15 江苏鼎茂半导体有限公司 Packaging method of wafer-level infrared detection chip
CN112670250B (en) * 2020-12-25 2022-04-08 东莞先导先进科技有限公司 Manufacturing method of infrared detector module
CN113964233B (en) * 2021-09-07 2024-01-23 云南昆物新跃光电科技有限公司 Packaging method of low-temperature vacuum infrared detector
CN115072652B (en) * 2022-07-19 2023-02-03 武汉高芯科技有限公司 Infrared detector chip packaging structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5914488A (en) * 1996-03-05 1999-06-22 Mitsubishi Denki Kabushiki Kaisha Infrared detector
US20090102003A1 (en) * 2006-04-25 2009-04-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Package comprising an electrical circuit
CN107134509A (en) * 2017-06-19 2017-09-05 合肥芯欣智能科技有限公司 A kind of method for packing of wafer-level packaging infrared detector
CN109346533A (en) * 2018-08-24 2019-02-15 西安赛恒电子科技有限公司 Wafer level packaging structure of chip and preparation method thereof
CN110047858A (en) * 2019-03-25 2019-07-23 江苏鼎茂半导体有限公司 A kind of packaging method of wafer scale infrared detecting chip

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102956662B (en) * 2012-11-22 2015-01-28 烟台睿创微纳技术有限公司 Vacuum sealing packaging structure and packaging method for infrared focal plane detector chip
CN203503623U (en) * 2013-10-21 2014-03-26 安徽北方芯动联科微系统技术有限公司 Monolithic integrated MEMS chip based on conductive pole wafer level packaging
CN106847759B (en) * 2017-02-23 2019-03-29 浙江大立科技股份有限公司 Vacuum encapsulation structure and its packaging method, the device for Vacuum Package
CN108180931A (en) * 2017-12-28 2018-06-19 中国科学院半导体研究所 A kind of terahertz wave detector

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5914488A (en) * 1996-03-05 1999-06-22 Mitsubishi Denki Kabushiki Kaisha Infrared detector
US20090102003A1 (en) * 2006-04-25 2009-04-23 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Package comprising an electrical circuit
CN107134509A (en) * 2017-06-19 2017-09-05 合肥芯欣智能科技有限公司 A kind of method for packing of wafer-level packaging infrared detector
CN109346533A (en) * 2018-08-24 2019-02-15 西安赛恒电子科技有限公司 Wafer level packaging structure of chip and preparation method thereof
CN110047858A (en) * 2019-03-25 2019-07-23 江苏鼎茂半导体有限公司 A kind of packaging method of wafer scale infrared detecting chip

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