WO2020186606A1 - 指纹识别架构及触控面板 - Google Patents

指纹识别架构及触控面板 Download PDF

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Publication number
WO2020186606A1
WO2020186606A1 PCT/CN2019/086024 CN2019086024W WO2020186606A1 WO 2020186606 A1 WO2020186606 A1 WO 2020186606A1 CN 2019086024 W CN2019086024 W CN 2019086024W WO 2020186606 A1 WO2020186606 A1 WO 2020186606A1
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Prior art keywords
unit
fingerprint recognition
pole
reset
switch
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PCT/CN2019/086024
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English (en)
French (fr)
Inventor
张洲
蔡育徵
马长文
徐盼
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武汉华星光电技术有限公司
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Publication of WO2020186606A1 publication Critical patent/WO2020186606A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1318—Sensors therefor using electro-optical elements or layers, e.g. electroluminescent sensing

Definitions

  • the present invention relates to the technical field of touch control, in particular to a fingerprint recognition framework and a touch panel.
  • fingerprint recognition technology Due to the uniqueness, immutability and convenience of fingerprints, fingerprint recognition technology has many advantages such as good security, high reliability and simple use. Therefore, fingerprint recognition technology has become the mainstream technology for identity verification of various electronic devices.
  • the types of fingerprint recognition technology include capacitive, ultrasonic, and optical.
  • optical fingerprint recognition technology is the most widely used in major mobile phone terminals.
  • the overall fingerprint unlocking time of the existing optical fingerprint recognition architecture is longer; this affects the fingerprint recognition performance.
  • a single sensor architecture of a conventional fingerprint recognition architecture is composed of a photodiode 101, a thin film transistor 103, and an integrator 104.
  • the first pole of the photodiode 101 is connected to Vcom (Voltage common, common voltage), and the second pole is connected to the source of the thin film transistor 103; the output of the thin film transistor from the source is based on the photodiode Voltage, the gate (G, Gate) is connected to the switch signal line, the drain is connected to the integrator 104; the negative electrode of the integrator 104 is connected to the thin film transistor 103, and the positive electrode is connected to Vref (Voltage Reference, reference The voltage) terminal is connected, the output terminal is connected to the negative electrode through a capacitor Cf, and a reading signal line is connected.
  • Vcom Voltage common, common voltage
  • Vref Voltage Reference, reference The voltage
  • the sensor is exposed externally.
  • a finger is touched, according to the different texture of the spine of the finger, the intensity of light reflected to the photodiode 101 is different, and a current corresponding to the intensity of the incident light is generated.
  • the parasitic capacitor 102 is charged.
  • the switch of the thin film transistor 103 is turned off; when the exposure is over, the switch of the thin film transistor 103 is turned on, and the photodiode 101 emits a photocurrent corresponding to the incident light.
  • the discharge voltage of the voltage of the parasitic capacitor 102 is converted into the source voltage of the thin film transistor 103, and the charge on the parasitic capacitor 102 is transferred to the capacitor Cf of the IC (integrated circuit) signal processing integrator 104.
  • Q Cf*U, the ridges and valleys reflect different light intensities, first converted into different electric charges, and then converted into voltage by the integrator 104 for processing to form a fingerprint.
  • This conventional fingerprint recognition architecture requires a long exposure time because of the small photo-generated current of the photodiode, and the charge conversion of the integrator is also a charging and discharging process. The time required for the overall exposure and collection is thus increased. The fingerprint unlocking time is longer; it affects the fingerprint recognition performance.
  • the present invention provides a fingerprint recognition architecture that can reduce exposure time; in addition, it outputs VOUT (voltage output, output voltage) as a voltage signal, it does not require a certain charge and discharge time to collect like an integrator; instead, it can collect voltage signals directly through an external IC; therefore, the exposure time and collection time are reduced, and the speed of fingerprint unlocking is improved, which can improve fingerprints Identify module performance.
  • VOUT voltage output, output voltage
  • the present invention provides a fingerprint recognition architecture, including: a photosensitive unit, a current generation unit, a switch unit, a reset unit, and an amplifying unit; wherein,
  • the photosensitive unit is used to generate corresponding electrical signals from the light signals sensed by it;
  • the current generating unit is configured to store or generate a corresponding current according to the switch unit;
  • the switch unit is configured to output the current input by the current generation unit under the control of a switch signal
  • the reset unit is configured to reset the potential of the PE node through an initialization voltage under the control of a reset signal;
  • the PE node is a connection node between the switch unit, the reset unit, and the amplification unit ;
  • the amplifying unit is used to amplify the difference amplitude of the input current and output after the change rule is consistent, so as to identify the fingerprint information.
  • the photosensitive unit includes: a photodiode; wherein a first pole of the photodiode is connected to a first power supply voltage terminal, and a second pole is connected to the switch unit.
  • the current generation unit includes a capacitor; wherein the capacitor is connected in parallel with the photosensitive unit.
  • the capacitor includes: parasitic capacitance; wherein, the parasitic capacitance is the capacitance characteristic of the photosensitive unit under high frequency, which is equivalent to a capacitor.
  • the switching power supply includes: a switching transistor; wherein the first pole of the switching transistor is connected to the current generating unit, the second pole is connected to the PE node, and the control pole is connected to the switching signal line.
  • the reset unit includes: a reset transistor; wherein, the first pole of the reset transistor is connected to the initialization power supply voltage terminal, the second pole is connected to the PE node, and the control pole is connected to the reset signal line.
  • the amplifying unit includes an amplifying transistor; wherein the first pole of the amplifying transistor is connected to the second power supply voltage terminal, the second pole is connected to the read signal line, and the control pole is connected to the PE point.
  • a touch panel which includes the above fingerprint recognition architecture.
  • the touch panel includes a plurality of sensors, and each of the sensors is provided with a fingerprint recognition structure.
  • the sensors are arranged in an array, and the switch units of the fingerprint recognition structure located in the same row are connected to the same switch signal line; the amplifying units of the fingerprint recognition circuit located in the same column are connected to the same reading Signal line.
  • the fingerprint recognition architecture and touch panel of the present invention add two thin film transistors, the first thin film transistor is used for charge reset, and the second thin film transistor is used for differential amplification, which can reduce the exposure time; Output VOUT as a voltage signal, which does not require a certain charge and discharge time to collect like an integrator; instead, it can collect voltage signals directly through an external IC; therefore, the exposure time and collection time are reduced, the speed of fingerprint unlocking is improved, and the performance of the fingerprint recognition module can be improved .
  • Figure 1 is a schematic structural diagram of an existing fingerprint recognition architecture
  • Figure 2 is a schematic diagram of a preferred embodiment of the fingerprint recognition architecture of the present invention.
  • FIG. 3 is a schematic structural diagram of a preferred embodiment of the fingerprint identification architecture of the present invention.
  • Fig. 4 is a charge-voltage characteristic curve diagram of a preferred embodiment of the fingerprint recognition architecture of the present invention.
  • the transistors used in the embodiments of the present invention may be thin film transistors or field effect transistors or other devices with the same characteristics. Since the source and drain of the transistors used are interchangeable under certain conditions, the source, There is no difference in the description of the drain connection relationship. In the embodiment of the present invention, in order to distinguish the source and drain of the transistor, one of the electrodes is called the first electrode, the other is called the second electrode, and the gate is called the control electrode.
  • the present invention is aimed at the conventional fingerprint recognition architecture. Because the photodiode photoelectric current is small, the exposure time is long, and the charge conversion of the integrator is also a charging and discharging process. The time required is also long, so that the overall exposure collection time is The overall fingerprint unlocking time is lengthened; this embodiment can solve the technical problem that affects the fingerprint recognition performance.
  • this embodiment provides a fingerprint recognition architecture, which includes: a photosensitive unit, a current generation unit, a switch unit, a reset unit, and an amplifying unit; wherein the photosensitive unit is used to The induced optical signal generates a corresponding electrical signal; the current generating unit is used to generate a corresponding current according to the received electrical signal; the switch unit is used to transfer the current under the control of the scanning signal The current output output by the generating unit; the reset unit is used to reset the potential of the PE node through the initialization voltage under the control of the reset signal; the PE node is the switch unit, the reset unit, and the The connection node between the amplifying units; the amplifying unit is used to amplify the difference amplitude of the input current with the same change law.
  • the amplifying unit is added to the fingerprint recognition architecture of this embodiment, the very small difference in the charge of the PE points in this part will cause the amplifying unit to be turned on differently, resulting in a larger difference in VOUT voltage, thereby reducing Exposure time; what needs to be explained here is that because the light reflected by valleys and ridges are different, the electrical signals generated by the photosensitive unit are also different, so that the current signals generated by the current generating unit are also different. The signal of valley and ridge can be judged according to the magnitude of the signal output by the switch unit, so as to realize fingerprint identification.
  • the photosensitive unit includes: a photodiode 201; a first pole of the photodiode 201 is connected to a first power supply (Vcom) terminal, and a second pole is connected to the switch unit; specifically, the photodiode 201 can be The received light intensity generates different electrical signals.
  • Vcom first power supply
  • the current generating unit includes: a capacitor; the capacitor is connected in parallel with the photosensitive unit; the capacitor includes: a parasitic capacitance 202; wherein, the parasitic capacitance 202 is the capacitance exhibited by the photosensitive unit under high frequency
  • the characteristic is equivalent to a capacitor; specifically, during the exposure phase, the current charges the parasitic capacitance 202, and when the exposure ends, the parasitic capacitance 202 transfers its own charge.
  • the switch unit includes: a switch transistor 203; the first pole of the switch transistor 203 is connected to the current generating unit, the second pole is connected to the PE node, and the control pole is connected to the switch signal line; specifically, it is connected through the gate
  • the switch signal line controls the exposure time.
  • the switch transistor 203 is turned off, and the exposure is over, and the switch transistor 203 is turned on.
  • the reset unit includes: a reset transistor 204; the first pole of the reset transistor 204 is connected to the initialization power supply voltage terminal (VDD, Voltage Drain Drain), the second pole is connected to the PE node, and the control pole is connected to the reset signal line Reset; specifically, When a high-level signal is input to the reset signal line Reset, the reset transistor 204 is turned on, and the initialization signal terminal VDD inputs an initialization signal. At this time, the PE node can be reset, that is, the photosensitive unit is reset.
  • VDD Voltage Drain Drain Drain
  • the amplifying unit includes: an amplifying transistor 205; the first pole of the amplifying transistor 205 is connected to the second power supply terminal (VDD), the second pole is connected to the read signal line, and the control pole is connected to the PE point; specifically, after the exposure is over , The switching transistor 203 is turned on, the charge on the parasitic capacitor 202 is transferred to the PE node, and the PE node is connected to the gate of the amplifying transistor 205, which controls the opening degree of the amplifying transistor 205, so that the read signal line The voltage read at the location has a large difference. In this way, the amplifying transistor 205 can amplify the difference amplitude of the input current and output after the change rule is consistent, so as to identify the fingerprint information.
  • the method specifically includes:
  • Reset stage S1 When a high-level signal is input to the reset signal line Reset, the reset transistor 204 is turned on, and the initialization signal terminal VDD inputs an initialization signal. At this time, the PE node can be reset, that is, the photosensitive unit Reset.
  • Exposure stage S2 The photodiode 201 can generate different electrical signals according to the received light intensity to generate a current corresponding to the incident light intensity.
  • the photodiode 201 charges its own parasitic capacitance 202. During this time period , The switch of the switch transistor 203 is in the off state.
  • the switch signal line Gate receives a signal, the switch of the switch transistor 203 is turned on, and the charge on the parasitic capacitor 202 is transferred to the PE node, which is connected to the gate of the amplifying transistor 205 It controls the opening degree of the amplifying transistor 205; through the relationship between the amount of charge at the PE node and the output voltage of the amplifying transistor 205, as shown in Figure 4, a small difference in the amount of charge at the PE node ( ⁇ Q) can also Make the voltage (Vout) read at the reading signal line have a large difference. In this way, the amplifying transistor 205 can amplify the difference of the input current and output after the change rule is consistent, so as to identify fingerprint information. .
  • the working principle of the touch panel of this preferred embodiment is consistent with the working principle of the fingerprint recognition architecture of the above-mentioned preferred embodiment.
  • the fingerprint recognition detection circuit in this embodiment when the fingerprint recognition detection circuit in this embodiment is applied to a touch panel, multiple sensors can be provided in the touch panel, and each of the sensors has a fingerprint recognition structure set in one-to-one correspondence to achieve full-screen Fingerprint recognition.
  • the sensors can be arranged in an array, and the control electrodes of the switch transistors 203 of the fingerprint recognition in the same row are connected to the same switch signal line (Gate), and the signal output terminals Vout of the fingerprint recognition structure in the same column are connected. Connect the same read line (Read Line), in this case, it is convenient to wire the touch panel.
  • the fingerprint recognition structure and the touch panel of the present invention add two thin film transistors.
  • the first thin film transistor is used for charge reset, and the second thin film transistor is used for differential amplification.

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Abstract

本发明提供一种指纹识别架构及触控面板，包括：感光单元、电流生成单元、开关单元、复位单元、放大单元；复位阶段中，通过复位单元对PE节点进行电荷复位，读取阶段中，通过放大单元将PE节点处电荷量的差异放大，可以减少曝光时间，提升指纹解锁的速度。

Description

指纹识别架构及触控面板 技术领域
本发明涉及触控技术领域，尤其涉及一种指纹识别架构及触控面板。
 背景技术
随着科学技术的不断进步，越来越多的电子设备广泛的应用于人们的日常生活以及工作当中，为人们的日常生活以及工作带来了巨大的便利，而随着智能手机及平板等终端的发展需求，生物识别技术也越来越受到人们重视，由于指纹具有唯一性、不变性和便捷性，使得指纹识别技术具有安全性好、可靠性高以及使用简单等诸多优点。因此，指纹识别技术成为当下各种电子设备进行身份验证的主流技术。
指纹识别技术的种类包括电容式、超声波式、光学式，目前，光学式指纹识别技术在各大手机终端上应用最广泛。然而，现有的光学指纹识别架构整体指纹解锁时间加长；影响指纹识别性能。
如图1所示，常规指纹识别架构的单个传感器架构由光电二极管101、薄膜晶体管103、积分器104构成。所述光电二极管101的第一极与Vcom（Voltage common，公共电压）相连接，第二极与所述薄膜晶体管103的源极相连接；所述薄膜晶体管从源极输出基于所述光电二极管的电压，栅极（G，Gate）与开关信号线相连接，漏极与所述积分器104相连接；所述积分器104的负极与所述薄膜晶体管103连接，正极与Vref（Voltage Reference，基准电压）端连接，输出端通过一电容Cf与所述负极连接，且连接有读取信号线。
所述传感器通过外部曝光，在手指触摸时根据所述手指的脊骨纹理不同，反射到所述光电二极管101的光强不同，产生与入射的光强对应的电流，光电二极管101向自身拥有的寄生电容102进行充电，这一曝光时间段，所述薄膜晶体管103的开关处于关闭状态；曝光结束，所述薄膜晶体管103的开关打开，所述光电二极管101以与入射光对应的光电流放出所述寄生电容102的电压的电，放电电压被转化成所述薄膜晶体管103的源极电压，所述寄生电容102上的电荷转移到IC（集成电路）信号处理积分器104的电容Cf上，通过Q=Cf*U，将脊谷反射不同的光强，先转换成不同的电荷量，再通过所述积分器104转换成电压进行处理形成指纹。
 技术问题
这种常规指纹识别架构，因为光电二极体光生电流小，需要曝光的时间较长，并且积分器电荷转换也是一个充放电的过程需要的时间也较长，这样整体曝光采集时间，从而使得整体指纹解锁时间加长；影响指纹识别性能。
 技术解决方案
本发明提供一种指纹识别架构，可以减少曝光时间；另外输出VOUT（voltage output，输出电压）作为电压信号，不用像积分器需要一定充放电时间才能采集；而是可以通过外部IC直接采集电压信号；故降低了曝光时间和采集时间，提升指纹解锁的速度，可提升指纹识别模块性能。
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种指纹识别架构，包括：感光单元、电流生成单元、开关单元、复位单元、放大单元；其中，
所述感光单元，用于将其所感应的光信号，生成相应电信号；
所述电流生成单元，用于根据所述开关单元储存或生成相应的电流；
所述开关单元，用于在开关信号的控制下，将所述电流生成单元输入的电流输出；
所述复位单元，用于在复位信号的控制下，通过初始化电压对PE节点的电位进行重置；所述PE节点为所述开关单元、所述复位单元、所述放大单元之间的连接节点；
所述放大单元，用于将输入的所述电流的差异幅度放大且变化规律一致后输出，以供指纹信息的识别。
根据本发明一优选实施例，所述感光单元包括：光电二极管；其中，所述光电二极管的第一极连接第一电源电压端，第二极连接所述开关单元。
根据本发明一优选实施例，所述电流生成单元包括：电容器；其中，所述电容器与所述感光单元并联。
根据本发明一优选实施例，所述电容器包括：寄生电容；其中，所述寄生电容为所述感光单元在高频下表现出的电容特性，等效为一个电容器。
根据本发明一优选实施例，所述开关电源包括：开关晶体管；其中，所述开关晶体管的第一极连接所述电流生成单元，第二极连接PE节点，控制极连接开关信号线。
根据本发明一优选实施例，所述复位单元包括：复位晶体管；其中，所述复位晶体管的第一极连接初始化电源电压端，第二极连接PE节点，控制极连接复位信号线。
根据本发明一优选实施例，所述放大单元包括：放大晶体管；其中，放大晶体管的第一极连接第二电源电压端，第二极连接读取信号线，控制极连接PE点。
依据本发明的上述目的，提出一种触控面板，包括以上的指纹识别架构。
根据本发明一优选实施例，所述触控面板包括多个传感器，每个所述传感器中均设置有一个所述指纹识别架构。
根据本发明一优选实施例，所述传感器呈阵列排布，位于同一行的所述指纹识别架构的开关单元连接同一条开关信号线；位于同一列的指纹识别电路的放大单元连接同一条读取信号线。
 有益效果
相较于常规指纹识别架构，本发明的指纹识别架构及触控面板通过增加了两颗薄膜晶体管，第一薄膜晶体管用于电荷复位，第二薄膜晶体管用于差异放大，可以减少曝光时间；另外输出VOUT作为电压信号，不用像积分器需要一定充放电时间才能采集；而是可以通过外部IC直接采集电压信号；故降低了曝光时间和采集时间，提升指纹解锁的速度，可提升指纹识别模块性能。
 附图说明
图1为一种现有的指纹识别架构的结构示意图；
图2为本发明的指纹识别架构的优选实施例的示意图；
图3为本发明的指纹识别架构的优选实施例的结构示意图；
图4为本发明的指纹识别架构的优选实施例的电荷-电压特性曲线图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明实施例中的所采用的晶体管可以为薄膜晶体管或场效应管或其他特性的相同器件，由于采用的晶体管的源极和漏极在一定条件下是可以互换的，所以其源极、漏极从连接关系的描述上是没有区别的。在本发明实施例中，为区分晶体管的源极和漏极，将其中一极称为第一极，另一极称为第二极，栅极称为控制极。
本发明针对常规指纹识别架构，因为光电二极体光生电流小，需要曝光的时间较长，并且积分器电荷转换也是一个充放电的过程需要的时间也较长，这样整体曝光采集时间，从而使得整体指纹解锁时间加长；影响指纹识别性能的技术问题，本实施例能够解决该缺陷。
结合图2和图3所示，本实施例提供一种指纹识别架构，其包括：感光单元、电流生成单元、开关单元、复位单元、放大单元；其中，所述感光单元，用于将其所感应的光信号，生成相应电信号；所述电流生成单元，用于根据所接收到的所述电信号生成相应的电流；所述开关单元，用于在扫描信号的控制下，将所述电流生成单元输出的电流输出；所述复位单元，用于在复位信号的控制下，通过初始化电压对PE节点的电位进行重置；所述PE节点为所述开关单元、所述复位单元、所述放大单元之间的连接节点；所述放大单元，用于将输入的所述电流的差异幅度放大且变化规律一致。
由于在本实施例的指纹识别架构中增设了所述放大单元，因此，此部分PE点的电荷极小的差异会造成所述放大单元的开启程度不同，导致VOUT电压差异较大，从而减少了曝光时间；在此需要说明的是，由于谷和脊所反射的光强是不同的，因此，感光单元所生成的电信号也就不同，从而使得电流生成单元生成的电流信号也不同，这样来就可以根据开关单元输出的信号的大小来判断谷和脊的信号，从而实现指纹的识别。
其中，所述感光单元包括：光电二极管201；所述光电二极管201的第一极连接第一电源（Vcom）端，第二极连接所述开关单元；具体的，所述光电二极管201可以根据接收到的光强生成不同的电信号。
其中，所述电流生成单元包括：电容器；所述电容器与所述感光单元并联；所述电容器包括：寄生电容202；其中，所述寄生电容202为所述感光单元在高频下表现出的电容特性，等效为一个电容器；具体的，曝光阶段，电流给所述寄生电容202进行充电，曝光结束，所述寄生电容202转移出自身所带电荷。
其中，所述开关单元包括：开关晶体管203；所述开关晶体管203的第一极连接所述电流生成单元，第二极连接PE节点，控制极连接开关信号线；具体的，通过栅极所连接的开关信号线控制曝光时间，曝光阶段，所述开关晶体管203关闭，曝光结束，所述开关晶体管203打开。
其中，复位单元包括：复位晶体管204；所述复位晶体管204的第一极连接初始化电源电压端（VDD，Voltage Drain Drain），第二极连接PE节点，控制极连接复位信号线Reset；具体的，当给复位信号线Reset输入高电平信号时，所述复位晶体管204打开，初始化信号端VDD输入初始化信号，此时，则可以实现对PE节点的复位，也即对感光单元进行了复位。
其中，放大单元包括：放大晶体管205；所述放大晶体管205的第一极连接第二电源端（VDD），第二极连接读取信号线，控制极连接PE点；具体的，在曝光结束后，所述开关晶体管203打开，所述寄生电容202上的电荷转移到PE节点，PE节点连接着所述放大晶体管205的栅极，控制着所述放大晶体管205的开启程度，使得读取信号线处读取到的电压差异较大，这样，所述放大晶体管205实现了将输入的所述电流的差异幅度放大且变化规律一致后输出，以供指纹信息的识别。
结合图4所示的电荷-电压特性曲线图，对上述指纹识别架构的驱动方法进行具体说明。该方法具体包括：
复位阶段S1：当给复位信号线Reset输入高电平信号时，所述复位晶体管204打开，初始化信号端VDD输入初始化信号，此时，则可以实现对PE节点的复位，也即对感光单元进行了复位。
曝光阶段S2：所述光电二极管201可以根据接收到的光强生成不同的电信号，产生与入射的光强对应的电流，光电二极管201向自身拥有的寄生电容202进行充电，这一时间段内，所述开关晶体管203的开关处于关闭状态。
读取阶段S3：曝光结束后，开关信号线Gate接收到信号，所述开关晶体管203的开关打开，所述寄生电容202上的电荷转移到PE节点，PE节点连接着所述放大晶体管205的栅极，控制着所述放大晶体管205的开启程度；通过PE节点处的电荷量与所述放大晶体管205的输出电压关系如图4所示，PE节点处电荷量的微小差异（ΔQ），也能使得读取信号线处读取到的电压（Vout）差异较大，这样，所述放大晶体管205实现了将输入的所述电流的差异幅度放大且变化规律一致后输出，以供指纹信息的识别。
本优选实施例的触控面板的工作原理跟上述优选实施例的指纹识别架构的工作原理一致，具体可参考上述优选实施例的指纹识别架构的工作原理。
具体的，将本实施例中的指纹识别检测电路应用至触控面板时，触控面板中可以设置多个传感器，每个所述传感器中均有指纹识别架构一一对应设置，以实现全屏的指纹识别。此时，可以将所述传感器呈阵列排布，位于同一行的指纹识别的所述开关晶体管203的控制极连接同一条开关信号线（Gate），位于同一列的指纹识别架构的信号输出端Vout连接同一条读取线（Read Line），这样的话，方便触控面板的布线。
本发明的有益效果为：相较于常规指纹识别架构，本发明的指纹识别架构及触控面板通过增加了两颗薄膜晶体管，第一薄膜晶体管用于电荷复位，第二薄膜晶体管用于差异放大，可以减少曝光时间；另外输出VOUT作为电压信号，不用像积分器需要一定充放电时间才能采集；而是可以通过外部IC直接采集电压信号；故降低了曝光时间和采集时间，提升指纹解锁的速度，可提升指纹识别模块性能。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种指纹识别架构，其包括：感光单元、电流生成单元、开关单元、复位单元、放大单元，且所述电流生成单元与所述开关单元的第一极、所述复位单元以及所述放大单元与所述开关单元的第二极相连接；其中，
    所述感光单元，用于将其所感应的光信号，生成相应电信号；
    所述电流生成单元，用于根据所述开关单元储存或生成相应的电流；
    所述开关单元，用于在开关信号的控制下，将所述电流生成单元输入的电流输出；
    所述复位单元，用于在复位信号的控制下，通过初始化电压对PE节点的电位进行重置；所述PE节点为所述开关单元、所述复位单元、所述放大单元之间的连接节点；
    所述放大单元，用于将输入的所述电流的差异幅度放大且变化规律一致后输出，以供指纹信息的识别。
  2. 根据权利要求1所述的指纹识别架构，其中，所述感光单元包括：光电二极管；其中，所述光电二极管的第一极连接第一电源电压端，第二极连接所述开关单元。
  3. 根据权利要求1所述的指纹识别架构，其中，所述电流生成单元包括：电容器；其中，所述电容器与所述感光单元并联。
  4. 根据权利要求3所述的指纹识别架构，其中，所述电容器包括：寄生电容；其中，所述寄生电容为所述感光单元在高频下表现出的电容特性，等效为一个电容器。
  5. 根据权利要求1所述的指纹识别架构，其中，所述开关电源包括：开关晶体管；其中，所述开关晶体管的第一极连接所述电流生成单元，第二极连接PE节点，控制极连接开关信号线。
  6. 根据权利要求1所述的指纹识别架构，其中，所述复位单元包括：复位晶体管；其中，所述复位晶体管的第一极连接初始化电源电压端，第二极连接PE节点，控制极连接复位信号线。
  7. 根据权利要求1所述的指纹识别架构，其中，所述放大单元包括：放大晶体管；其中，放大晶体管的第一极连接第二电源电压端，第二极连接读取信号线，控制极连接PE点。
  8. 一种触控面板，其中，包括如权利要求1述的指纹识别架构。
  9. 根据权利要求8所述的触控面板，其中，所述触控面板包括多个传感器，每个所述传感器中均设置有一个指纹识别架构。
  10. 根据权利要求9所述的触控面板，其中，所述传感器呈阵列排布，位于同一行的所述指纹识别架构的开关单元连接同一条开关信号线；位于同一列的指纹识别电路的放大单元连接同一条读取信号线。
  11. 一种指纹识别架构，其包括：感光单元、电流生成单元、开关单元、复位单元、放大单元；其中，
    所述感光单元，用于将其所感应的光信号，生成相应电信号；
    所述电流生成单元，用于根据所述开关单元储存或生成相应的电流；
    所述开关单元，用于在开关信号的控制下，将所述电流生成单元输入的电流输出；
    所述复位单元，用于在复位信号的控制下，通过初始化电压对PE节点的电位进行重置；所述PE节点为所述开关单元、所述复位单元、所述放大单元之间的连接节点；
    所述放大单元，用于将输入的所述电流的差异幅度放大且变化规律一致后输出，以供指纹信息的识别。
  12. 根据权利要求11所述的指纹识别架构，其中，所述感光单元包括：光电二极管；其中，所述光电二极管的第一极连接第一电源电压端，第二极连接所述开关单元。
  13. 根据权利要求11所述的指纹识别架构，其中，所述电流生成单元包括：电容器；其中，所述电容器与所述感光单元并联。
  14. 根据权利要求13所述的指纹识别架构，其中，所述电容器包括：寄生电容；其中，所述寄生电容为所述感光单元在高频下表现出的电容特性，等效为一个电容器。
  15. 根据权利要求11所述的指纹识别架构，其中，所述开关电源包括：开关晶体管；其中，所述开关晶体管的第一极连接所述电流生成单元，第二极连接PE节点，控制极连接开关信号线。
  16. 根据权利要求11所述的指纹识别架构，其中，所述复位单元包括：复位晶体管；其中，所述复位晶体管的第一极连接初始化电源电压端，第二极连接PE节点，控制极连接复位信号线。
  17. 根据权利要求11所述的指纹识别架构，其中，所述放大单元包括：放大晶体管；其中，放大晶体管的第一极连接第二电源电压端，第二极连接读取信号线，控制极连接PE点。
  18. 一种触控面板，其中，包括如权利要求11所述的指纹识别架构。
  19. 根据权利要求18所述的触控面板，其中，所述触控面板包括多个传感器，每个所述传感器中均设置有一个指纹识别架构。
  20. 根据权利要求19所述的触控面板，其中，所述传感器呈阵列排布，位于同一行的所述指纹识别架构的开关单元连接同一条开关信号线；位于同一列的指纹识别电路的放大单元连接同一条读取信号线。
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