WO2020186461A1 - Dispositif électroluminescent semi-conducteur - Google Patents

Dispositif électroluminescent semi-conducteur Download PDF

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Publication number
WO2020186461A1
WO2020186461A1 PCT/CN2019/078762 CN2019078762W WO2020186461A1 WO 2020186461 A1 WO2020186461 A1 WO 2020186461A1 CN 2019078762 W CN2019078762 W CN 2019078762W WO 2020186461 A1 WO2020186461 A1 WO 2020186461A1
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WO
WIPO (PCT)
Prior art keywords
layer
electrode
semiconductor light
emitting component
suction nozzle
Prior art date
Application number
PCT/CN2019/078762
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English (en)
Chinese (zh)
Inventor
王�锋
夏章艮
詹宇
黄禹杰
洪灵愿
彭康伟
林素慧
Original Assignee
厦门市三安光电科技有限公司
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Application filed by 厦门市三安光电科技有限公司 filed Critical 厦门市三安光电科技有限公司
Priority to PCT/CN2019/078762 priority Critical patent/WO2020186461A1/fr
Priority to CN201980003928.6A priority patent/CN110998878B/zh
Publication of WO2020186461A1 publication Critical patent/WO2020186461A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Definitions

  • the present invention relates to the field of semiconductor technology, and in particular to a semiconductor light emitting component.
  • Figure 1 is a schematic diagram of the structure of an existing LED chip on the same side of the electrode.
  • the isolation groove between the positive and negative electrodes (pads) needs to reserve a certain width to ensure that the subsequent LED chip is soldered between the positive and negative electrodes. No short circuit.
  • the size of the LED chip continues to shrink to a smaller scale, such as mini LED or micro LED, because the size of the LED chip is too small (generally less than 150 ⁇ m), the distance between the positive and negative electrodes (pads) on the chip surface is smaller (generally smaller than 100 ⁇ m), and the diameter of the conventional suction nozzle is generally 50-100 ⁇ m.
  • the LED chip needs to be sucked in the process of testing, sorting or transferring, it is easy to cause the positive and negative electrode (pad) isolation grooves to leak and insufficient suction , The job cannot be completed successfully, as shown in Figure 2.
  • the small contact area between the LED chip and the front surface of the suction nozzle when the chip electrode (pad) faces the transfer film, the adhesion is poor, the core particles are easily deflected, and the adhesion is not strong.
  • the suction nozzle adsorption layer is arranged in the gap between the positive and negative electrode structures, which can increase the effective contact area between the sorting suction nozzle (or the suction nozzle for transfer and other purposes) and the LED chip, and effectively inhibit the suction nozzle from sucking the LED chip. Air leakage, thereby improving the sorting (or transfer) yield.
  • the semiconductor light-emitting assembly includes: a semiconductor laminate and an electrode located on the semiconductor laminate, the electrode including: a first conductivity type electrode and A second conductivity type electrode with a different conductivity type, the first conductivity type electrode and the second conductivity type electrode have a certain gap, and the space volume defining the electrode gap is V 1 , characterized in that: a suction nozzle layer disposed between the conductive electrode and the second conductivity type electrode, the nozzle adsorption layer space volume V 2 representing the electrode gap space volume ratio V 1: V ratio of the dielectric 2 / V 1 is Within 50% to 100%.
  • the ratio of V 2 /V 1 is between 80% and 95%.
  • the height of the electrode structure is defined as H, and the thickness of the suction nozzle adsorption layer is between 0.8H and 1.2H.
  • the suction nozzle adsorption layer includes an insulating structure layer or a conductive structure layer or a combination of the two.
  • the insulating structure layer is selected from an inorganic dielectric layer or an organic dielectric layer or a combination of the two.
  • the insulating structure layer is selected from SiO 2 or Si 3 N 4 or Al 2 O 3 or TiO 2 or any combination of the foregoing.
  • the insulating structure layer is selected from polymer parylene or polyimide or polybenzoxazole or polyphenylene sulfide or silica gel or any combination of the foregoing.
  • the insulating structure layer is a single material structure layer or a distributed Bragg reflector (DBR) layer.
  • DBR distributed Bragg reflector
  • the shape of the insulating structure layer is a column, a semi-ellipsoid, a hemisphere, a cone, or a similar shape, or any combination of the foregoing.
  • the suction nozzle adsorption layer has a strip shape or a belt shape, and the distance between adjacent suction nozzle adsorption layers is less than or equal to 50 ⁇ m.
  • the insulating structure layer has a strip shape or a strip shape, and is located at the edge or the central area of the LED chip.
  • the conductive structure layer is a metal structure layer.
  • the conductive structure layer has a strip shape or a strip shape, and is located at the edge of the LED chip.
  • the conductive structure layer serves as a current spreading strip of the electrode.
  • the surface of the electrode is provided with a metal layer, and the adhesion between the metal layer and the surface of the suction nozzle adsorption layer is less than the adhesion between the metal layer and the surface of the electrode.
  • the metal layer is selected from Rh, Ru, Ag, Sn, Pt, or any combination of the foregoing.
  • the thickness of the metal layer is less than or equal to 10 nm.
  • a bump layer is respectively provided on the surface of the first conductive type electrode and the second conductive type electrode,
  • the thickness of the bump layer is 5 times or more, and more preferably 10 times or more the thickness of the electrode.
  • the volume of the space between adjacent bump layers is defined as V 3 , and the ratio of V 2 /(V 1 +V 3 ) is between 50% and 80%.
  • the sum of the height of the electrode and the bump is defined as H, and the thickness of the suction nozzle adsorption layer is between 0.6H and 0.9H.
  • the bump layer is selected from Ni or AgSn or Cu or AuSn or NiAg or Sn or Au or SnAgCu or any combination of the foregoing.
  • the semiconductor laminate has a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer different in conductivity from the first conductivity type semiconductor layer.
  • a current spreading layer is formed on the semiconductor laminate.
  • the beneficial effects of the present invention include at least:
  • the effective contact area between the sorting suction nozzle (or the suction nozzle for transfer and other purposes) and the LED chip can be increased, and the air leakage phenomenon when the suction nozzle sucks the LED chip can be effectively suppressed , Thereby improving the yield and accuracy of sorting (or transfer);
  • the suction nozzle adsorption layer with reflective characteristics is arranged between the electrode structures to reflect the light emitted by the semiconductor laminate (the light-emitting surface is away from the electrode direction) to increase the light extraction efficiency;
  • the following embodiments mainly take light-emitting diodes as examples, but it should be noted that the present invention is not limited to light-emitting diodes.
  • the semiconductor components of the present invention may include light-emitting diodes, lasers, detectors, solar cells, or integrated circuit devices. Including semiconductor laminate and electrode structure.
  • Figure 1 is a schematic diagram of a conventional flip-chip LED chip structure.
  • Figure 2 is a schematic diagram of a conventional flip-chip LED chip sorting process.
  • FIG. 3 is a schematic cross-sectional view of the semiconductor light-emitting component of Embodiment 1.
  • FIG. 4 is a schematic diagram of the sorting process of the semiconductor light-emitting components of Embodiment 1.
  • FIG. 4 is a schematic diagram of the sorting process of the semiconductor light-emitting components of Embodiment 1.
  • Example 5 is a schematic cross-sectional view of the semiconductor light-emitting component of Example 2.
  • FIG. 6 is a schematic cross-sectional view of the semiconductor light-emitting component of Embodiment 3.
  • FIG. 7 is a schematic cross-sectional view of the semiconductor light emitting component of Embodiment 4.
  • FIG. 7 is a schematic cross-sectional view of the semiconductor light emitting component of Embodiment 4.
  • FIG. 8 is a schematic cross-sectional view of the semiconductor light emitting component of Embodiment 5.
  • FIG. 8 is a schematic cross-sectional view of the semiconductor light emitting component of Embodiment 5.
  • FIG. 9 is a schematic top view of the semiconductor light emitting component of Example 6.
  • Example 10 is a schematic cross-sectional view of the semiconductor light emitting component of Example 6.
  • FIG. 11 is a schematic top view of the semiconductor light emitting component of Example 7.
  • FIG. 11 is a schematic top view of the semiconductor light emitting component of Example 7.
  • Fig. 12 is a schematic cross-sectional view of Fig. 11 along the A-A plane.
  • FIG. 13 is a schematic top view of the semiconductor light emitting component of Example 8.
  • FIG. 14 is a schematic top view of the semiconductor light emitting component of Example 9.
  • FIG. 14 is a schematic top view of the semiconductor light emitting component of Example 9.
  • Example 15 is a schematic cross-sectional view of the semiconductor light-emitting component of Example 10.
  • Substrate Silicon
  • 201 Semiconductor laminate
  • 202 Current spreading layer (TCL)
  • 203 Insulation protection layer
  • 300N N electrode
  • 300P P electrode
  • 400, 400' Insulation of suction nozzle adsorption layer Structure layer
  • 401 metal structure layer of the suction nozzle adsorption layer
  • 500 metal layer
  • 600N N bumps
  • 600P P bumps.
  • the semiconductor light emitting component provided by this embodiment includes: a substrate (Sapphire) 100, a semiconductor stack composed of an N-type layer (n-GaN layer), a light-emitting layer, and a P-type layer (p-GaN layer) Body 201, current spreading layer (TCL) 202, insulating protection layer 203, N electrode 300N, P electrode 300P, and the insulating structure layer 400 of the suction nozzle adsorption layer.
  • a substrate substrate
  • n-GaN layer N-type layer
  • p-GaN layer P-type layer
  • the above-mentioned semiconductor light-emitting component may be a light-emitting diode or a laser diode structure
  • the substrate 100 is a sapphire (Sapphire) substrate; an N-type layer (not shown in the figure) is formed on the substrate (Sapphire) 100; the light-emitting layer ( (Not shown in the figure), formed on the N-type layer; P-type layer (not shown in the figure), formed on the light-emitting layer, the aforementioned N-type layer (n-GaN layer), light-emitting layer and P-type layer (p -GaN layer) constitute a semiconductor laminate 201; a current spreading layer (TCL) 202 is formed on the upper surface of a part of the semiconductor laminate 201; the semiconductor laminate 201 has a local defect area, exposing the N-type layer (n-GaN Layer), the N electrode 300N is formed on the local defect area and extends above the upper surface of the semiconductor laminate 201, and the P electrode 300P
  • the current spreading layer 202 can be made of indium tin oxide (ITO) or zinc oxide (ZnO) or cadmium tin oxide (CTO) or indium oxide (InO) or indium (In) doped with zinc oxide (ZnO) or aluminum (Al). Zinc oxide (ZnO) or gallium (Ga) doped zinc oxide (ZnO) or any combination of the foregoing.
  • ITO indium tin oxide
  • ZnO zinc oxide
  • CTO cadmium tin oxide
  • InO indium oxide
  • In indium (In) doped with zinc oxide (ZnO) or aluminum (Al).
  • an insulating protective layer 203 is formed on the sidewall of the local defect area to isolate the N electrode 300N from electrical contact with the semiconductor laminate 201.
  • the insulating protective layer 203 can also extend to the upper surface of the current spreading layer 202 and is located The bottom of the N electrode 300N and the P electrode 300P can be used as a current blocking layer.
  • the N-type layer can be used as the first conductive type semiconductor layer, the P-type layer is used as the second conductive type semiconductor layer, the N electrode is used as the first conductive type electrode, and the P electrode is used as the second conductive type electrode;
  • the P-type layer can be used as the first conductivity type semiconductor layer, the N-type layer is used as the second conductivity type semiconductor layer, the P electrode is used as the first conductivity type electrode, and the N electrode is used as the second conductivity type electrode.
  • the suction nozzle adsorption layer structure can be an insulating structure layer or a metal structure layer or a combination of the two, and the insulating structure layer 400 is preferred in this embodiment.
  • the material of the insulating structure layer can be an inorganic dielectric layer or an organic dielectric layer or a combination of the two.
  • the inorganic dielectric layer can be selected from SiO 2 or Si 3 N 4 or Al 2 O 3 or TiO 2 or any combination of the foregoing, and the organic dielectric layer can be selected from polymer parylene or polyimide or polybenzoxe. Azole or polyphenylene sulfide or silica gel or any combination of the foregoing.
  • the insulating structure layer 400 can be a single material structure layer, or a composite structure formed of multiple materials, such as a distributed Bragg reflector (DBR) layer. In this embodiment, a SiO 2 single material structure layer is preferred.
  • DBR distributed Bragg reflector
  • the shape of the insulating structure layer 400 may be a cylinder, a semi-ellipsoid, a hemisphere, a cone, or a similar shape, or any combination of the foregoing, and a cylinder is preferred in this embodiment.
  • the suction nozzle adsorption layer is arranged between the N electrode 300N and the P electrode 300P, which can increase the effectiveness of the sorting nozzle (or the suction nozzle for transfer purposes) and the LED chip.
  • the contact area effectively suppresses air leakage when the suction nozzle sucks the LED chip, thereby improving the sorting (or transfer) yield.
  • the electrode (pad) of the LED chip faces the transfer film (usually blue film or white film), the effective contact area with the transfer film will also increase, and the bonding effect will be greatly improved, thereby reducing the output of the LED chip. The chances of crystal standing and flipping during transportation. Define the space volume V 2 of the suction nozzle adsorption layer 400.
  • the ratio of the space volume V 2 of the suction nozzle adsorption layer to the space volume V1 of the electrode gap V 2
  • the ratio of /V 1 is between 50% and 100%, and more preferably, the ratio of V 2 /V 1 is between 80% and 95%.
  • this embodiment is provided with a metal layer 500 on the electrode surface.
  • the adhesion between the metal layer and the surface of the suction nozzle adsorption layer is less than that of the metal layer.
  • Adhesion between the layer and the surface of the electrode (N electrode 300N and P electrode 300P).
  • the material of the metal layer can be Rh, Ru, Ag, Sn, Pt, or any combination of the foregoing.
  • the thickness of the metal layer is less than or equal to 10 nm, and the main consideration is to not affect the solder of the final electrode (pad).
  • the lift-off method can be used directly when removing the suction nozzle adsorption layer on the electrode layer without using expensive ion-coupled plasma (ICP) and other equipment to reduce the production cost of LED chips.
  • ICP ion-coupled plasma
  • the metal layer can be formed by plating after the electrode is made, or it can be completed during the process of making the electrode, that is, the metal layer can be regarded as a component of the electrode and used as the surface layer of the electrode structure.
  • the difference from Embodiment 2 is that the shape of the insulating structure layer 400 of the nozzle adsorption layer of the embodiment 2 is a column, while the shape of the insulating structure layer 400 of the nozzle adsorption layer of this embodiment is a semi-ellipsoid.
  • the cross-sectional shape of the sorting (or transfer) nozzle is generally circular or elliptical, so that the nozzle is easier to self-assemble near the center of the semi-ellipsoid of the suction layer of the nozzle, which helps to improve the accuracy of grasping and arrangement.
  • the thickness of the insulating structure layer 400 of the suction nozzle adsorption layer is preferably between 0.8H and 1.2H. Utilizing the characteristics of the curved surface of the semi-ellipsoid, the sorting nozzle is easier to adsorb to the center of the curved surface when the chip is adsorbed, and the deviation of placing the chip in the set position during arrangement is also smaller, thereby improving the grasping and arrangement accuracy.
  • the difference from embodiment 2 is that the insulating structure layer 400 of the suction nozzle adsorption layer of the embodiment 2 is a SiO 2 single material structure layer, and the insulating structure layer of the suction nozzle adsorption layer of this embodiment is made of multiple materials Composite layer.
  • the suction nozzle adsorption layer includes an insulating structure layer 400 and an insulating structure layer 400', wherein the insulating structure layer 400 is a semi-ellipsoid, and a distributed Bragg reflector (DBR) composed of SiO 2 and TiO 2 is selected, and the insulating structure layer 400' is U-shaped, and SiO 2 transparent material is used to reflect the light emitted by the semiconductor laminate (the light-emitting surface is away from the electrode direction) to increase the light extraction efficiency.
  • DBR distributed Bragg reflector
  • the difference from Embodiment 2 is that the shape of the insulating structure layer 400 of the nozzle adsorption layer of the embodiment 2 is a cylinder, while the shape of the insulating structure layer 400 of the nozzle adsorption layer of this embodiment is a cone.
  • the longitudinal section is trapezoidal or triangular, and the suction nozzle is easier to self-assemble near the center of the semi-ellipsoid of the suction layer of the suction nozzle, which helps to improve the accuracy of grasping and arrangement.
  • the suction nozzle adsorption layer that is not completely filled can reduce the cracking of the insulating structure layer 400 caused by stress during reflow soldering (such as soldering), thereby improving the reliability of the semiconductor light-emitting component.
  • the difference from Embodiment 2 is that the insulating structure layer 400 of the suction nozzle adsorption layer of this embodiment is in the shape of a strip or band, and the distance D between adjacent suction nozzle adsorption layers is less than or equal to 50 ⁇ m , Located at the edge of the LED chip.
  • the edge sealing structure can effectively reduce the air leakage of the sorting nozzle when adsorbing the core particles, and improve the sorting yield of LED chips.
  • the suction nozzle adsorption layer of this embodiment uses a metal structure layer 401, and the metal structure layer can be used as a current expansion bar of the electrode.
  • the current spreading bar is generally a metal structure layer, and can also be an ITO conductive structure layer. Adding current expansion bars on both sides of the gap between the P and N electrodes can make the P electrode and the N electrode each have one current expansion bar.
  • the current expansion bar spacing D is less than or equal to 50 ⁇ m. At this time, there may be no need to form an additional insulating structure layer for isolating the current expansion bar.
  • a non-metal structure layer such as a transparent or semi-transparent conductive structure layer, can also be selected as the suction nozzle adsorption layer.
  • Embodiment 7 the difference from Embodiment 7 is that the two current expansion strips of this embodiment are both connected to the P electrode and serve as the current expansion layer and the suction nozzle adsorption layer.
  • the difference from Embodiment 7 is that the distance D of the current expansion bars of the embodiment 7 is less than or equal to 50 ⁇ m, while the distance D of the current expansion bars of this embodiment is less than or equal to 30 ⁇ m.
  • the insulating structure layer 401 is then filled to electrically isolate the current expansion strips to prevent the current expansion strips from being connected to each other due to the squeezing of the suction nozzles and causing short circuits, thereby ensuring the reliability of the semiconductor light emitting components.
  • the difference from Embodiment 1 is that in this embodiment, a bump layer is provided on the surface of the P electrode 300P and the N electrode 300N, respectively, and the suction nozzle adsorption layer 400 is interposed between the bump layer/electrode Between the gaps, the shape is preferably semi-ellipsoidal, and the nozzle is easier to self-assemble near the center of the semi-ellipsoid, which can improve the accuracy of grasping and arrangement; the semi-ellipsoidal can reduce the stress during reflow soldering (such as soldering) Caused by the cracking of the insulating structure layer.
  • the thickness of the bump layer is 5 times or more, and more preferably 10 times or more the thickness of the electrode.
  • the material of the bump layer can be selected from materials such as Ni, AgSn, Cu, AuSn, NiAg, Sn, Au, SnAgCu, or any combination of the foregoing, for direct solder reflow to form solder balls.
  • the bump layer may be separated from the carrier substrate.
  • the volume of the space between the adjacent bump layers is defined as V 3.
  • the ratio of V 2 /(V 1 +V 3 ) is preferably between 50% and 80%. Because the thickness of the bump layer generally occupies 1/4 to 1/2 of the thickness of the LED chip, it is difficult for the middle gap area to contact the adhesion layer of the transfer film when the chip is transferred and flipped, resulting in a reduction in chip adhesion area and bumps. The layer is not easily turned over onto the transfer film.
  • the design of the adsorption layer of the middle nozzle can effectively increase the adhesion area of the chip and greatly improve the transfer efficiency of the chip.
  • the sum of the height of the electrode structure and the bump is defined as H, and the thickness of the insulating structure layer 400 of the nozzle adsorption layer is preferably between 0.6H and 0.9H.
  • the present invention can increase the effective contact area between the sorting nozzle (or the nozzle for transfer and other purposes) and the LED chip by providing the suction nozzle adsorption layer between the electrode structures, and effectively prevent the suction nozzle from sucking the LED chip.
  • the leakage phenomenon of the LED chip thereby improving the yield and accuracy of the sorting (or transfer); by setting the suction nozzle adsorption layer between the electrode structure, when the electrode (pad) of the LED chip faces the transfer film, the effective The contact area will also increase, which can effectively reduce the poor bonding ratio between the chip and the transfer film, thereby reducing the chances of the LED chip being crystallized and flipped during the transportation process; the suction nozzle adsorption layer is set between the electrode structure to make the LED The adhesion between the chip and the transfer film can be improved, which can effectively reduce the difficulty of massive transfer and improve the transfer efficiency; by setting the suction nozzle adsorption layer with reflective characteristics between the electrode structures, it is used to reflect the light emitted by the semiconductor laminate (light emitting The surface is far away from the electrode direction) to increase the efficiency of light extraction; by providing a suction nozzle adsorption layer with insulating characteristics between the electrode structures, the risk of short circuits between the electrodes (pads) can be effectively reduced.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un module électroluminescent semi-conducteur, comprenant : un stratifié semi-conducteur et une électrode située au-dessus du stratifié semi-conducteur ; l'électrode comprend : une première électrode conductrice et une seconde électrode conductrice qui a un type de conduction différent de celui de la première électrode conductrice, un certain espace étant présent entre la première électrode conductrice et la seconde électrode conductrice, et le volume de l'espace de l'espace d'électrode décrit étant défini par V1 ; l'électrode est caractérisée en ce qu'une couche d'aspiration de buse d'aspiration est disposée entre la première électrode conductrice et la seconde électrode conductrice, et le volume de l'espace de la couche d'aspiration de buse d'aspiration V2 occupe une proportion du volume de l'espace de l'espace d'électrode V1 : le rapport V2/V1 étant compris entre 50 % et 100 %.
PCT/CN2019/078762 2019-03-19 2019-03-19 Dispositif électroluminescent semi-conducteur WO2020186461A1 (fr)

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PCT/CN2019/078762 WO2020186461A1 (fr) 2019-03-19 2019-03-19 Dispositif électroluminescent semi-conducteur
CN201980003928.6A CN110998878B (zh) 2019-03-19 2019-03-19 一种半导体发光组件

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PCT/CN2019/078762 WO2020186461A1 (fr) 2019-03-19 2019-03-19 Dispositif électroluminescent semi-conducteur

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Citations (4)

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US20020153529A1 (en) * 2001-04-24 2002-10-24 Jin-Shown Shie LED array with optical isolation structure and method of manufacturing the same
CN1421019A (zh) * 2000-04-04 2003-05-28 东丽工程株式会社 Cof组件的制造方法
CN106816408A (zh) * 2016-09-07 2017-06-09 友达光电股份有限公司 微型发光二极管单元的中介结构及其制造方法
CN106910700A (zh) * 2017-03-09 2017-06-30 京东方科技集团股份有限公司 转印装置和电子器件的转印方法

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US8889485B2 (en) * 2011-06-08 2014-11-18 Semprius, Inc. Methods for surface attachment of flipped active componenets
TWI625871B (zh) * 2017-07-24 2018-06-01 友達光電股份有限公司 微型發光元件及其製造方法及其應用之顯示裝置與過渡載板裝置
CN112786643B (zh) * 2018-03-20 2023-06-13 厦门市三安光电科技有限公司 微发光元件、微发光二极管及其转印方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1421019A (zh) * 2000-04-04 2003-05-28 东丽工程株式会社 Cof组件的制造方法
US20020153529A1 (en) * 2001-04-24 2002-10-24 Jin-Shown Shie LED array with optical isolation structure and method of manufacturing the same
CN106816408A (zh) * 2016-09-07 2017-06-09 友达光电股份有限公司 微型发光二极管单元的中介结构及其制造方法
CN106910700A (zh) * 2017-03-09 2017-06-30 京东方科技集团股份有限公司 转印装置和电子器件的转印方法

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