CN113169259A - 发光二极管及其制作方法 - Google Patents
发光二极管及其制作方法 Download PDFInfo
- Publication number
- CN113169259A CN113169259A CN201980006016.4A CN201980006016A CN113169259A CN 113169259 A CN113169259 A CN 113169259A CN 201980006016 A CN201980006016 A CN 201980006016A CN 113169259 A CN113169259 A CN 113169259A
- Authority
- CN
- China
- Prior art keywords
- electrode
- light
- layer
- transparent substrate
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 162
- 239000004065 semiconductor Substances 0.000 claims abstract description 76
- 239000010410 layer Substances 0.000 claims description 220
- 238000005520 cutting process Methods 0.000 claims description 40
- 238000003475 lamination Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 239000007769 metal material Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 5
- 238000010329 laser etching Methods 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 description 19
- 238000010586 diagram Methods 0.000 description 13
- 230000008569 process Effects 0.000 description 10
- 238000004806 packaging method and process Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000000227 grinding Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000005496 eutectics Effects 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000001788 irregular Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0025—Processes relating to coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Abstract
一种发光二极管及其制作方法，其扩大倒装型发光二极管芯片的固晶电极的表面积，改善芯片焊接特性。该发光二极管包括：透明基板（210），具有相对的第一表面（210A）和第二表面（210B）；透明基板（210）的第一表面（210A）的外周边具有台阶（211），该台阶（211）具有一介于第一表面（210A）和第二表面（210B）之间的第三表面（210D），及连接第一表面（210A）和第三表面（210D）之间的侧壁（210E）；发光外延叠层，形成于所述透明基板（210）的第一表面（210A）之上，包括自所述透明基板（210）的第一表面（210A）堆叠的第一导电类型半导体层（221）、有源层（222）和第二导电类型半导体层（223）；绝缘层（230），至少覆盖所述发光外延叠层的顶表面（220B）及侧壁，并且具有第一开口（271）和第二开口（272）；第一电极（241），配置到所述绝缘层（230）的上部，通过所述第一开口（271）电连接到所述第一导电类型半导体层（221）；第二电极（242），配置到所述绝缘层（230）的上部，通过所述第二开口（272）电连接到所述第二导电类型半导体层（223）；其中所述第一电极（241）和/或第二电极（242）延伸至该台阶（211），至少部分覆盖连接所述第一表面（210A）和第三表面（210D）之间的侧壁（210E）及第三表面（210D）。
Description
PCT国内申请，说明书已公开。
Claims (25)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/115417 WO2021087686A1 (zh) | 2019-11-04 | 2019-11-04 | 发光二极管及其制作方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113169259A true CN113169259A (zh) | 2021-07-23 |
Family
ID=75848723
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201980006016.4A Pending CN113169259A (zh) | 2019-11-04 | 2019-11-04 | 发光二极管及其制作方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20220115563A1 (zh) |
| CN (1) | CN113169259A (zh) |
| WO (1) | WO2021087686A1 (zh) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20220093825A1 (en) * | 2020-09-24 | 2022-03-24 | Seoul Viosys Co., Ltd. | High efficiency light emitting device, unit pixel having the same, and displaying apparatus having the same |
| US12080687B2 (en) * | 2020-10-16 | 2024-09-03 | Seoul Viosys Co., Ltd. | Unit pixel having light emitting device, method of fabricating the same, and displaying apparatus having the same |
| US20220173080A1 (en) * | 2020-11-30 | 2022-06-02 | Seoul Viosys Co., Ltd. | Unit pixel and displaying apparatus including the unit pixel |
| EP4258367A4 (en) * | 2021-05-20 | 2024-06-26 | Samsung Electronics Co., Ltd. | LIGHT EMITTING DIODE AND DISPLAY MODULE |
| DE102021209250A1 (de) * | 2021-08-24 | 2023-03-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Schichtenstapel für einen Halbleiterchip, Halbleiterchip und Verfahren zur Herstellung eines Schichtenstapels für einen Halbleiterchip |
| CN117691011B (zh) * | 2024-02-02 | 2024-05-07 | 量晶显示(浙江)科技有限公司 | Led的制备方法以及led |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010024460A1 (en) * | 1997-02-21 | 2001-09-27 | Masahiro Yamamoto | Semiconductor light-emitting device |
| CN102738344A (zh) * | 2011-04-15 | 2012-10-17 | 晶元光电股份有限公司 | 发光装置 |
| CN104022216A (zh) * | 2013-02-28 | 2014-09-03 | 日亚化学工业株式会社 | 发光装置 |
| CN105742469A (zh) * | 2016-04-15 | 2016-07-06 | 深圳大道半导体有限公司 | 半导体发光芯片 |
| CN107195747A (zh) * | 2017-06-01 | 2017-09-22 | 华南理工大学 | 一种微米尺寸倒装led芯片及其制备方法 |
-
2019
- 2019-11-04 CN CN201980006016.4A patent/CN113169259A/zh active Pending
- 2019-11-04 WO PCT/CN2019/115417 patent/WO2021087686A1/zh active Application Filing
-
2021
- 2021-12-23 US US17/561,517 patent/US20220115563A1/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010024460A1 (en) * | 1997-02-21 | 2001-09-27 | Masahiro Yamamoto | Semiconductor light-emitting device |
| CN102738344A (zh) * | 2011-04-15 | 2012-10-17 | 晶元光电股份有限公司 | 发光装置 |
| CN104022216A (zh) * | 2013-02-28 | 2014-09-03 | 日亚化学工业株式会社 | 发光装置 |
| CN105742469A (zh) * | 2016-04-15 | 2016-07-06 | 深圳大道半导体有限公司 | 半导体发光芯片 |
| CN107195747A (zh) * | 2017-06-01 | 2017-09-22 | 华南理工大学 | 一种微米尺寸倒装led芯片及其制备方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021087686A1 (zh) | 2021-05-14 |
| US20220115563A1 (en) | 2022-04-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12002904B2 (en) | Light-emitting element with cushion part | |
| CN112768484B (zh) | 发光二极管及其制作方法 | |
| CN113169259A (zh) | 发光二极管及其制作方法 | |
| TWI758402B (zh) | 發光元件 | |
| US9391239B2 (en) | Light emitting diode | |
| US8026527B2 (en) | LED structure | |
| CN102194929B (zh) | 发光器件 | |
| TWI720053B (zh) | 發光元件及其製造方法 | |
| US9425359B2 (en) | Light emitting diode | |
| WO2012016377A1 (en) | Light emitting diode chip, light emitting diode package structure, and method for forming the same | |
| CN112164742A (zh) | 一种发光二极管 | |
| US11545595B2 (en) | Contact structures for light emitting diode chips | |
| CN111433921B (zh) | 一种发光二极管 | |
| US9362449B2 (en) | High efficiency light emitting diode and method of fabricating the same | |
| KR102461968B1 (ko) | 발광 소자 | |
| CN113659051A (zh) | 一种倒装半导体发光元件、半导体发光器件及显示装置 | |
| US9548424B2 (en) | Light emitting diode | |
| CN110021691B (zh) | 一种半导体发光器件 | |
| KR102673667B1 (ko) | 발광 다이오드 칩 | |
| TWI466327B (zh) | 晶圓級發光二極體結構之製造方法 | |
| JP2006073618A (ja) | 光学素子およびその製造方法 | |
| TW202329483A (zh) | 發光元件 | |
| KR20150069228A (ko) | 파장변환층을 갖는 발광 다이오드 및 그것을 제조하는 방법 | |
| CN113644180B (zh) | 倒装led芯片及其制备方法 | |
| CN117199211A (zh) | 发光二极管及其制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210723 |