WO2020177193A1 - 有机发光二极管显示面板及其制造方法 - Google Patents

有机发光二极管显示面板及其制造方法 Download PDF

Info

Publication number
WO2020177193A1
WO2020177193A1 PCT/CN2019/083670 CN2019083670W WO2020177193A1 WO 2020177193 A1 WO2020177193 A1 WO 2020177193A1 CN 2019083670 W CN2019083670 W CN 2019083670W WO 2020177193 A1 WO2020177193 A1 WO 2020177193A1
Authority
WO
WIPO (PCT)
Prior art keywords
heat
emitting diode
organic light
layer
display panel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/083670
Other languages
English (en)
French (fr)
Inventor
袁朝煜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Original Assignee
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
Publication of WO2020177193A1 publication Critical patent/WO2020177193A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8794—Arrangements for heating and cooling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present invention relates to the field of display technology, and in particular to an organic light emitting diode display panel and a manufacturing method thereof.
  • OLED display devices have many advantages such as thinness, active light emission, fast response speed, large viewing angle, wide color gamut, high brightness and low power consumption. Therefore, OLED display devices have been popular in recent years. s concern.
  • OLED display panels need to be transported between different machines.
  • the OLED display panel needs to be sucked by the suction nozzle on the picker of the machine to process the process steps in each machine.
  • FIG. 1 shows a schematic diagram of the suction nozzle 211 on the grasping member 21 of the machine 200 when sucking the existing OLED display panel 100.
  • the existing OLED display panel 100 includes a glass bottom plate 11, a polyimide (PI) substrate 12, an OLED device layer 13, a thin film encapsulation layer 14, a touch panel 15, and a polarizer 16.
  • PI polyimide
  • the suction force (as shown by the arrow in FIG. 1) applied by the suction nozzle 211 to the OLED device layer 13 will cause defects in the area 111 of the OLED display panel 211, making the OLED display panel 100
  • the problem of adsorption Mura occurs, which seriously reduces the product yield.
  • the purpose of the present invention is to provide an organic light emitting diode display panel and a manufacturing method thereof to solve the technical problems of Mura adsorption and low product yield in the prior art.
  • the present invention provides an organic light emitting diode display panel, characterized in that the organic light emitting diode display panel includes:
  • a first heat-resistant thermal conductive layer disposed on the first substrate
  • a stress buffer layer arranged on the first heat-resistant heat-conducting layer
  • a second heat-resistant heat-conducting layer disposed on the stress buffer layer
  • a second substrate is arranged on the second heat-resistant heat-conducting layer.
  • the organic light emitting diode display panel further includes:
  • An organic light emitting diode device layer arranged on the second substrate;
  • a touch panel arranged on the thin film packaging layer
  • a polarizer is arranged on the touch panel.
  • the first substrate and the second substrate are flexible substrates, and the material of the flexible substrate is polyimide.
  • the material of the stress buffer layer is graphene oxide and has a compressibility of about 60%
  • the materials of the first heat-resistant thermal conductive layer and the second heat-resistant thermal conductive layer are It is graphene oxide.
  • the first high-temperature-resistant thermally conductive layer and the second high-temperature-resistant thermally conductive layer withstand a process temperature of at least 500°C, and the first high-temperature thermally conductive layer and the second
  • the thickness of the heat-resistant thermal conductive layer is between 10 micrometers and 30 micrometers.
  • the stress buffer layer withstands a process temperature of at least 500° C., and the stress buffer layer is micro-deformed to buffer the external force applied to the organic light emitting diode display panel, and the stress
  • the thickness of the buffer layer is between 50 microns and 100 microns.
  • the present invention also provides a method for manufacturing an organic light emitting diode display panel, characterized in that the method includes:
  • a second substrate is formed on the second heat-resistant thermal conductive layer.
  • the material of the stress buffer layer is graphene oxide and has a compressibility of about 60%, and the first heat-resistant heat-conducting layer and the second heat-resistant heat-conducting layer The material of the layer is graphene oxide.
  • the first high-temperature-resistant thermally conductive layer and the second high-temperature thermally conductive layer withstand a process temperature of at least 500°C, and the first high-temperature thermally conductive layer and the The thickness of the second heat-resistant thermal conductive layer is between 10 ⁇ m and 30 ⁇ m.
  • the stress buffer layer is subjected to a process temperature of at least 500° C., the stress buffer layer is micro-deformed to buffer an external force applied to the organic light emitting diode display panel, and
  • the thickness of the stress buffer layer is between 50 microns and 100 microns.
  • the present invention provides an organic light emitting diode display panel and a manufacturing method thereof.
  • a laminated structure is formed.
  • the laminated structure can buffer and release the stress generated in the display panel when the suction nozzle absorbs the display panel. Withstand the high temperature process to solve the technical problem of adsorption of Mura and improve the product yield.
  • FIG. 1 shows a schematic diagram of the suction nozzle on the gripping member of the machine when sucking the existing OLED display panel.
  • FIG. 2 is a cross-sectional side view of an OLED display panel according to an embodiment of the invention.
  • FIG. 2 is a cross-sectional side view of an OLED display panel according to an embodiment of the invention.
  • the present invention provides an organic light emitting diode (organic light emitting diode (OLED) display panel 500, the organic light emitting diode display panel 500 includes:
  • a glass bottom plate 51 A glass bottom plate 51;
  • a second heat-resistant thermal conductive layer 532 is disposed on the stress buffer layer 54.
  • a second substrate 522 is disposed on the second heat-resistant thermal conductive layer 532.
  • an organic light emitting diode display panel is taken as an example for description. Therefore, the organic light emitting diode display panel 500 may further include:
  • An organic light emitting diode device layer 55 which is disposed on the second substrate 522;
  • a polarizer 58 is arranged on the touch panel 57.
  • the first substrate 521 and the second substrate 522 are flexible substrates.
  • the material of the first substrate 521 and the second substrate 522 may be polyimide (PI).
  • the first substrate 521 and the second substrate 522 may be made of different flexible materials.
  • the stress buffer layer 54 can buffer the suction force exerted by the suction nozzle when the display panel 500 is sucked, and can withstand the high temperature process when the polyimide is coated on the glass bottom plate 51 to form the substrates 521 and 522. Therefore, the stress buffer layer 54 has properties such as high strength, high elasticity, and high temperature resistance.
  • the stress buffer layer 54 can use high-quality graphene oxide with a number of layers of less than or equal to three layers as a raw material to form a three-dimensional porous foam material through self-assembly, and the pore size of the foam material is several micrometers. To hundreds of microns.
  • the material formed in this way has low density and high elasticity, can be compressed and rebounded repeatedly, and its compression rate can reach 60%.
  • the stress buffer layer can withstand a process temperature of at least 500°C.
  • the thickness of the stress buffer layer 54 is between 50 microns and 100 microns.
  • the first heat-resistant thermal conductive layer 531 has the characteristics of high temperature resistance, thermal conductivity, and low linear expansion coefficient, so that during the laser lift-off (LLO) step in the manufacturing process of the display panel 500, the The high temperature generated by the laser on the substrate 521 is dissipated, so as to prevent the laser energy from passing through the substrate 521 and causing defects to the product.
  • LLO laser lift-off
  • the second high-temperature heat-resistant thermal conductive layer 532 has the characteristics of high-temperature resistance, heat conduction, and low linear expansion coefficient; the second high-temperature heat-resistant thermal conductive layer 532 is used for the laser annealing process performed on the amorphous silicon above the substrate 522 In order to prevent product defects caused by uneven crystallization and thermal stress concentration due to excessive local temperature, it is considered to provide the second high-temperature heat-resistant thermal conductivity layer 532 under the substrate 522 to ensure uniform temperature during laser annealing. Sex.
  • the first heat-resistant thermally conductive layer 531 and the second heat-resistant thermally conductive layer 532 can be made of high-quality graphene oxide with a number of less than or equal to three layers as raw materials, and are closely stacked layer by layer through a specific reduction method. It has very good thermal conductivity and a small linear expansion coefficient.
  • the first heat-resistant thermally conductive layer 531 and the second heat-resistant thermally conductive layer 532 can withstand a process temperature of at least 500°C.
  • the thickness of the first heat-resistant thermally conductive layer 531 and the second heat-resistant thermally conductive layer 532 is between 10 micrometers and 30 micrometers.
  • the present invention is characterized in that the stress buffer layer and the high-temperature heat-resistant thermal conductive layer are sandwiched between two substrates to form a laminated structure that can buffer and release the suction nozzle that is produced in the display panel when the suction nozzle absorbs the display panel. At the same time, it can withstand high-temperature processes, thereby solving the technical problem of adsorbing Mura and improving product yield.
  • the present invention also provides a method for manufacturing an organic light emitting diode (OLED) display panel 500, the method includes:
  • a second substrate 522 is formed on the second heat-resistant thermal conductive layer 532.
  • the first substrate 521 and the second substrate 522 are flexible substrates.
  • the material of the first substrate 521 and the second substrate 522 may be polyimide (PI).
  • the first substrate 521 and the second substrate 522 may be made of different materials.
  • the stress buffer layer 54 can buffer the suction force exerted by the suction nozzle when the display panel 500 is sucked, and can withstand the high temperature process when the polyimide is coated on the glass bottom plate 51 to form the substrates 521 and 522. Therefore, the stress buffer layer 54 has properties such as high strength, high elasticity, and high temperature resistance.
  • the stress buffer layer 54 can use high-quality graphene oxide with a number of layers of less than or equal to three layers as a raw material to form a three-dimensional porous foam material through self-assembly, and the pore size of the foam material is several micrometers. To hundreds of microns.
  • the material formed in this way has low density and high elasticity, can be compressed and rebounded repeatedly, and its compression rate can reach 60%.
  • the stress buffer layer can withstand a process temperature of at least 500°C.
  • the thickness of the stress buffer layer 54 is between 50 microns and 100 microns.
  • the first heat-resistant thermal conductive layer 531 has the characteristics of high temperature resistance, thermal conductivity, and low linear expansion coefficient, so that during the laser lift-off (LLO) step in the manufacturing process of the display panel 500, The high temperature generated by the laser on the substrate 521 is dissipated, so as to prevent the laser energy from passing through the substrate 521 and causing defects to the product.
  • LLO laser lift-off
  • the second high-temperature heat-resistant thermal conductive layer 532 has the characteristics of high-temperature resistance, heat conduction, and low linear expansion coefficient; the second high-temperature heat-resistant thermal conductive layer 532 is used for the laser annealing process performed on the amorphous silicon above the substrate 522 In order to prevent product defects caused by uneven crystallization and thermal stress concentration due to excessive local temperature, it is considered to provide the second high-temperature heat-resistant thermal conductivity layer 532 under the substrate 522 to ensure uniform temperature during laser annealing. Sex.
  • the first heat-resistant thermally conductive layer 531 and the second heat-resistant thermally conductive layer 532 can be made of high-quality graphene oxide with a number of less than or equal to three layers as raw materials, and are closely stacked layer by layer through a specific reduction method. It has very good thermal conductivity and a small linear expansion coefficient.
  • the first heat-resistant thermally conductive layer 531 and the second heat-resistant thermally conductive layer 532 can withstand a process temperature of at least 500°C.
  • the thickness of the first heat-resistant thermally conductive layer 531 and the second heat-resistant thermally conductive layer 532 is between 10 micrometers and 30 micrometers.
  • the present invention provides an organic light emitting diode display panel and a manufacturing method thereof.
  • a laminated structure is formed.
  • the laminated structure can buffer and release the stress generated in the display panel when the suction nozzle absorbs the display panel. Withstand the high temperature process to solve the technical problem of adsorption of Mura and improve the product yield.

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

一种有机发光二极管显示面板，所述有机发光二极管显示面板包括：一玻璃底板(51)；一第一基板(521)，设置在所述玻璃底板(51)上；一第一耐高温导热层(531)，设置在所述第一基板(521)上；一应力缓冲层(54)，设置在所述第一耐高温导热层(531)上；一第二耐高温导热层(532)，设置在所述应力缓冲层(54)上；及一第二基板(522)，设置在所述第二耐高温导热层(532)上。

Description

有机发光二极管显示面板及其制造方法 技术领域
本发明涉及显示技术领域，特别涉及一种有机发光二极管显示面板及其制造方法。
 背景技术
有机发光二极管(organic light emitting diode，OLED)显示装置具有轻薄、主动发光、响应速度快、可视角大、色域宽、亮度高和功耗低等众多优点，因此OLED显示装置近几年受到人们的关注。
在OLED显示装置制造过程中，OLED显示面板需要在不同的机台之间运送。另外，在各个机台中，OLED显示面板需要被机台的抓取构件(picker)上的吸嘴吸附，以在各个机台中进行工艺步骤处理。
请参考图1，图1显示机台200的抓取构件21上的吸嘴211在吸附现有的OLED显示面板100时的示意图。现有的OLED显示面板100包括玻璃底板11、聚酰亚胺(polyimide，PI)基板12、OLED器件层13、薄膜封装层14、触控面板15、偏光片16。当吸嘴211吸附OLED显示面板100时，吸嘴211对OLED器件层13所施加的吸附力量(如图1中箭头所示)会对OLED显示面板211的区域111造成缺陷，使得OLED显示面板100产生吸附Mura问题，严重降低产品良率。
因此，有必要提供一种有机发光二极管显示面板及其制造方法，以解决现有技术所存在的问题。
 技术问题
本发明的目的在于提供一种有机发光二极管显示面板及其制造方法，以解决现有技术中吸附Mura及产品良率低的技术问题。
 技术解决方案
为解决上述技术问题，本发明提供一种有机发光二极管显示面板，其特征在于，所述有机发光二极管显示面板包括：
一玻璃底板；
一第一基板，设置在所述玻璃底板上；
一第一耐高温导热层，设置在所述第一基板上；
一应力缓冲层，设置在所述第一耐高温导热层上；
一第二耐高温导热层，设置在所述应力缓冲层上；及
一第二基板，设置在所述第二耐高温导热层上。
在本发明的有机发光二极管显示面板中，所述有机发光二极管显示面板还包括：
一有机发光二极管器件层，设置在所述第二基板上；
一薄膜封装层，设置在所述有机发光二极管器件层上；
一触控面板，设置在所述薄膜封装层上；及
一偏光片，设置在所述触控面板上。
在本发明的有机发光二极管显示面板中，所述第一基板与所述第二基板是柔性基板，所述柔性基板的材质为聚酰亚胺。
在本发明的有机发光二极管显示面板中，所述应力缓冲层的材质为氧化石墨烯且具有约60%的压缩率，所述第一耐高温导热层及所述第二耐高温导热层的材质为氧化石墨烯。
在本发明的有机发光二极管显示面板中，所述第一耐高温导热层及所述第二耐高温导热层承受至少500℃的制程温度，及所述第一耐高温导热层及所述第二耐高温导热层的厚度在介于10微米与30微米之间。
在本发明的有机发光二极管显示面板中，所述应力缓冲层承受至少500℃的制程温度，所述应力缓冲层通过微变形以缓冲施加在所述有机发光二极管显示面板的外力，及所述应力缓冲层的厚度在介于50微米与100微米之间。
本发明还提供一种制造有机发光二极管显示面板的方法，其特征在于，所述方法包括：
提供一玻璃底板；
形成一第一基板在所述玻璃底板上；
形成一第一耐高温导热层在所述第一基板上；
形成一应力缓冲层在所述第一耐高温导热层上；
形成一第二耐高温导热层在所述应力缓冲层上；及
形成一第二基板在所述第二耐高温导热层上。
在本发明的制造有机发光二极管显示面板的方法中，所述应力缓冲层的材质为氧化石墨烯且具有约60%的压缩率，所述第一耐高温导热层及所述第二耐高温导热层的材质为氧化石墨烯。
在本发明的制造有机发光二极管显示面板的方法中，所述第一耐高温导热层及所述第二耐高温导热层承受至少500℃的制程温度，及所述第一耐高温导热层及所述第二耐高温导热层的厚度在介于10微米与30微米之间。
在本发明的制造有机发光二极管显示面板的方法中，所述应力缓冲层承受至少500℃的制程温度，所述应力缓冲层通过微变形以缓冲施加在所述有机发光二极管显示面板的外力，及所述应力缓冲层的厚度在介于50微米与100微米之间。
 有益效果
相较于现有技术，本发明提出一种有机发光二极管显示面板及其制造方法。通过将应力缓冲层与耐高温导热层夹设在两个基板之间，而形成一个层叠结构，所述层叠结构可以缓冲且释放吸嘴对显示面板吸附时在显示面板中产生的应力，同时可以承受高温制程，藉此解决吸附Mura的技术问题，提升产品良率。
 附图说明
图1显示机台的抓取构件上的吸嘴在吸附现有的OLED显示面板时的示意图。
图2为根据本发明实施例的OLED显示面板的剖面侧视图。
 本发明的实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是以相同标号表示。
请参照图2。图2为根据本发明实施例的OLED显示面板的剖面侧视图。本发明提出一种有机发光二极管(organic light emitting diode，OLED)显示面板500，所述有机发光二极管显示面板500包括：
一玻璃底板51；
一第一基板521，设置在所述玻璃底板51上；
一第一耐高温导热层531，设置在所述第一基板521上；
一应力缓冲层54，设置在所述第一耐高温导热层531上；
一第二耐高温导热层532，设置在所述应力缓冲层54上；及
一第二基板522，设置在所述第二耐高温导热层532上。
本实施例是以有机发光二极管显示面板为示例进行说明，因此有机发光二极管显示面板500还可以包括：
一有机发光二极管器件层55，设置在所述第二基板522上；
一薄膜封装层56，设置在所述有机发光二极管器件层55上；
一触控面板57，设置在所述薄膜封装层56上；及
一偏光片58，设置在所述触控面板57上。
根据本发明一优选实施例，所述第一基板521与所述第二基板522是柔性基板。例如，所述第一基板521与所述第二基板522的材质可以是聚酰亚胺(polyimide，PI)。或者，所述第一基板521与所述第二基板522可以分别由不同的具有柔性的材质制成。
所述应力缓冲层54可以缓冲吸嘴对显示面板500吸附时所施加的吸力，并能承受聚酰亚胺在被涂覆于玻璃底板51上以形成基板521、522时的高温制程。因此，所述应力缓冲层54具有高强度、高弹性及耐高温等的性质。例如，所述应力缓冲层54能够以高质量的片层数小于或等于三层的氧化石墨烯为原料，经自组装而形成三维多孔泡沫材料，所述泡沫材料中的孔洞尺寸在数个微米至数百微米之间。这样形成的材料具有低密度低、具有较高弹性，可反复压缩、回弹，其压缩率可达到60%。在本发明的一优选实施例中，所述应力缓冲层可以承受至少500℃的制程温度。优选地，所述应力缓冲层54的厚度在介于50微米与100微米之间。
所述第一耐高温导热层531具有耐高温且能导热且线膨胀系数小的特性，以为了在显示面板500的制造过程中的雷射剥离(laser lift-off，LLO)步骤期间，可以将激光在基板521上产生的高温予以散热，以避免激光能量透过基板521对产品造成缺陷。所述第二耐高温导热层532具有耐高温且能导热且线膨胀系数小的特性；所述第二耐高温导热层532是用于在基板522上方的对非晶硅所执行的激光退火过程中，防止因局部温度过高导致结晶不均匀及热应力集中而导致的产品不良，因此考虑在基板522下方设置所述第二耐高温导热层532，以确保证激光退火过程中的温度的均匀性。例如，所述第一耐高温导热层531与所述第二耐高温导热层532能够以高质量的片层数小于或等于三层的氧化石墨烯为原料，经特定还原方法而层层紧密堆叠来形成，具有非常好的导热性能、具有线膨胀系数小的特性。在本发明的一优选实施例中，所述第一耐高温导热层531及所述第二耐高温导热层532可以承受至少500℃的制程温度。优选地，所述第一耐高温导热层531及所述第二耐高温导热层532的厚度在介于10微米与30微米之间。
本发明的特征在于将应力缓冲层与耐高温导热层夹设在两个基板之间，而形成一个层叠结构，所述层叠结构可以缓冲且释放吸嘴对显示面板吸附时在显示面板中产生的应力，同时可以承受高温制程，藉此解决吸附Mura的技术问题，提升产品良率。
本发明还提出一种制造有机发光二极管(organic light emitting diode，OLED)显示面板500的方法，所述方法包括：
提供一玻璃底板51；
形成一第一基板521在所述玻璃底板51上；
形成一第一耐高温导热层531在所述第一基板521上；
形成一应力缓冲层54在所述第一耐高温导热层531上；
形成一第二耐高温导热层532在所述应力缓冲层54上；及
形成一第二基板522在所述第二耐高温导热层532上。
根据本发明一优选实施例，所述第一基板521与所述第二基板522是柔性基板。例如，所述第一基板521与所述第二基板522的材质可以是聚酰亚胺(polyimide，PI)。或者，所述第一基板521与所述第二基板522可以分别由不同的材质制成。
所述应力缓冲层54可以缓冲吸嘴对显示面板500吸附时所施加的吸力，并能承受聚酰亚胺在被涂覆于玻璃底板51上以形成基板521、522时的高温制程。因此，所述应力缓冲层54具有高强度、高弹性及耐高温等的性质。例如，所述应力缓冲层54能够以高质量的片层数小于或等于三层的氧化石墨烯为原料，经自组装而形成三维多孔泡沫材料，所述泡沫材料中的孔洞尺寸在数个微米至数百微米之间。这样形成的材料具有低密度低、具有较高弹性，可反复压缩、回弹，其压缩率可达到60%。在本发明的一优选实施例中，所述应力缓冲层可以承受至少500℃的制程温度。优选地，所述应力缓冲层54的厚度在介于50微米与100微米之间。
所述第一耐高温导热层531具有耐高温且能导热且线膨胀系数小的特性，以为了在显示面板500的制造过程中的雷射剥离(laser lift-off，LLO)步骤期间，可以将激光在基板521上产生的高温予以散热，以避免激光能量透过基板521对产品造成缺陷。所述第二耐高温导热层532具有耐高温且能导热且线膨胀系数小的特性；所述第二耐高温导热层532是用于在基板522上方的对非晶硅所执行的激光退火过程中，防止因局部温度过高导致结晶不均匀及热应力集中而导致的产品不良，因此考虑在基板522下方设置所述第二耐高温导热层532，以确保证激光退火过程中的温度的均匀性。例如，所述第一耐高温导热层531与所述第二耐高温导热层532能够以高质量的片层数小于或等于三层的氧化石墨烯为原料，经特定还原方法而层层紧密堆叠来形成，具有非常好的导热性能、具有线膨胀系数小的特性。在本发明的一优选实施例中，所述第一耐高温导热层531及所述第二耐高温导热层532可以承受至少500℃的制程温度。优选地，所述第一耐高温导热层531及所述第二耐高温导热层532的厚度在介于10微米与30微米之间。
相较于现有技术，本发明提出一种有机发光二极管显示面板及其制造方法。通过将应力缓冲层与耐高温导热层夹设在两个基板之间，而形成一个层叠结构，所述层叠结构可以缓冲且释放吸嘴对显示面板吸附时在显示面板中产生的应力，同时可以承受高温制程，藉此解决吸附Mura的技术问题，提升产品良率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (16)

  1. 一种有机发光二极管显示面板，其特征在于，所述有机发光二极管显示面板包括：
    一玻璃底板；
    一第一基板，设置在所述玻璃底板上；
    一第一耐高温导热层，设置在所述第一基板上；
    一应力缓冲层，设置在所述第一耐高温导热层上；
    一第二耐高温导热层，设置在所述应力缓冲层上；及
    一第二基板，设置在所述第二耐高温导热层上；
    其中，所述应力缓冲层具有约60%的压缩率，所述应力缓冲层承受至少500℃的制程温度。
  2. 根据权利要求1所述的有机发光二极管显示面板，其特征在于，所述有机发光二极管显示面板还包括：
    一有机发光二极管器件层，设置在所述第二基板上；
    一薄膜封装层，设置在所述有机发光二极管器件层上；
    一触控面板，设置在所述薄膜封装层上；及
    一偏光片，设置在所述触控面板上。
  3. 根据权利要求1所述的有机发光二极管显示面板，其特征在于，所述第一基板与所述第二基板是柔性基板，所述柔性基板的材质为聚酰亚胺。
  4. 根据权利要求1所述的有机发光二极管显示面板，其特征在于，所述应力缓冲层的材质为氧化石墨烯，所述第一耐高温导热层及所述第二耐高温导热层的材质为氧化石墨烯。
  5. 根据权利要求1所述的有机发光二极管显示面板，其特征在于，所述第一耐高温导热层及所述第二耐高温导热层承受至少500℃的制程温度，及所述第一耐高温导热层及所述第二耐高温导热层的厚度在介于10微米与30微米之间。
  6. 根据权利要求1所述的有机发光二极管显示面板，其特征在于，所述应力缓冲层通过微变形以缓冲施加在所述有机发光二极管显示面板的外力，及所述应力缓冲层的厚度在介于50微米与100微米之间。
  7. 一种有机发光二极管显示面板，其特征在于，所述有机发光二极管显示面板包括：
    一玻璃底板；
    一第一基板，设置在所述玻璃底板上；
    一第一耐高温导热层，设置在所述第一基板上；
    一应力缓冲层，设置在所述第一耐高温导热层上；
    一第二耐高温导热层，设置在所述应力缓冲层上；及
    一第二基板，设置在所述第二耐高温导热层上。
  8. 根据权利要求7所述的有机发光二极管显示面板，其特征在于，所述有机发光二极管显示面板还包括：
    一有机发光二极管器件层，设置在所述第二基板上；
    一薄膜封装层，设置在所述有机发光二极管器件层上；
    一触控面板，设置在所述薄膜封装层上；及
    一偏光片，设置在所述触控面板上。
  9. 根据权利要求7所述的有机发光二极管显示面板，其特征在于，所述第一基板与所述第二基板是柔性基板，所述柔性基板的材质为聚酰亚胺。
  10. 根据权利要求7所述的有机发光二极管显示面板，其特征在于，所述应力缓冲层的材质为氧化石墨烯且具有约60%的压缩率，所述第一耐高温导热层及所述第二耐高温导热层的材质为氧化石墨烯。
  11. 根据权利要求7所述的有机发光二极管显示面板，其特征在于，所述第一耐高温导热层及所述第二耐高温导热层承受至少500℃的制程温度，及所述第一耐高温导热层及所述第二耐高温导热层的厚度在介于10微米与30微米之间。
  12. 根据权利要求7所述的有机发光二极管显示面板，其特征在于，所述应力缓冲层承受至少500℃的制程温度，所述应力缓冲层通过微变形以缓冲施加在所述有机发光二极管显示面板的外力，及所述应力缓冲层的厚度在介于50微米与100微米之间。
  13. 一种制造有机发光二极管显示面板的方法，其特征在于，所述方法包括：
    提供一玻璃底板；
    形成一第一基板在所述玻璃底板上；
    形成一第一耐高温导热层在所述第一基板上；
    形成一应力缓冲层在所述第一耐高温导热层上；
    形成一第二耐高温导热层在所述应力缓冲层上；及
    形成一第二基板在所述第二耐高温导热层上。
  14. 根据权利要求13所述的制造有机发光二极管显示面板的方法，其特征在于，所述应力缓冲层的材质为氧化石墨烯且具有约60%的压缩率，所述第一耐高温导热层及所述第二耐高温导热层的材质为氧化石墨烯。
  15. 根据权利要求13所述的制造有机发光二极管显示面板的方法，其特征在于，所述第一耐高温导热层及所述第二耐高温导热层承受至少500℃的制程温度，及所述第一耐高温导热层及所述第二耐高温导热层的厚度在介于10微米与30微米之间。
  16. 据权利要求13所述的制造有机发光二极管显示面板的方法，其特征在于，所述应力缓冲层承受至少500℃的制程温度，所述应力缓冲层通过微变形以缓冲施加在所述有机发光二极管显示面板的外力，及所述应力缓冲层的厚度在介于50微米与100微米之间。
PCT/CN2019/083670 2019-03-01 2019-04-22 有机发光二极管显示面板及其制造方法 Ceased WO2020177193A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910155898.2 2019-03-01
CN201910155898.2A CN109860264A (zh) 2019-03-01 2019-03-01 有机发光二极管显示面板及其制造方法

Publications (1)

Publication Number Publication Date
WO2020177193A1 true WO2020177193A1 (zh) 2020-09-10

Family

ID=66899549

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/083670 Ceased WO2020177193A1 (zh) 2019-03-01 2019-04-22 有机发光二极管显示面板及其制造方法

Country Status (2)

Country Link
CN (1) CN109860264A (zh)
WO (1) WO2020177193A1 (zh)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106935633A (zh) * 2017-05-23 2017-07-07 上海天马微电子有限公司 显示面板和显示面板的制造方法
US20170373093A1 (en) * 2014-09-03 2017-12-28 Samsung Display Co., Ltd. Flexible display panel
WO2018203279A1 (en) * 2017-05-05 2018-11-08 Ecole Polytechnique Federale De Lausanne (Epfl) Inorganic hole conductor based perovskite photoelectric conversion device with high operational stability at long term
CN108878682A (zh) * 2018-06-28 2018-11-23 上海天马有机发光显示技术有限公司 一种保护结构及其制作方法、有机发光显示装置
CN109037156A (zh) * 2018-07-19 2018-12-18 昆山国显光电有限公司 显示面板及显示母板
CN109390483A (zh) * 2017-08-11 2019-02-26 Tcl集团股份有限公司 一种显示设备及其制备方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106356472A (zh) * 2016-10-18 2017-01-25 武汉华星光电技术有限公司 Oled器件制作方法及oled器件
CN106684699A (zh) * 2016-12-06 2017-05-17 超晶科技（北京）有限公司 二维材料柔性衬底结构、半导体发光器件及其制作方法
CN108539051A (zh) * 2018-03-20 2018-09-14 武汉华星光电半导体显示技术有限公司 显示面板及其制作方法
CN108831911B (zh) * 2018-06-12 2019-08-13 武汉华星光电半导体显示技术有限公司 一种柔性有机发光二极管显示器及其制作方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20170373093A1 (en) * 2014-09-03 2017-12-28 Samsung Display Co., Ltd. Flexible display panel
WO2018203279A1 (en) * 2017-05-05 2018-11-08 Ecole Polytechnique Federale De Lausanne (Epfl) Inorganic hole conductor based perovskite photoelectric conversion device with high operational stability at long term
CN106935633A (zh) * 2017-05-23 2017-07-07 上海天马微电子有限公司 显示面板和显示面板的制造方法
CN109390483A (zh) * 2017-08-11 2019-02-26 Tcl集团股份有限公司 一种显示设备及其制备方法
CN108878682A (zh) * 2018-06-28 2018-11-23 上海天马有机发光显示技术有限公司 一种保护结构及其制作方法、有机发光显示装置
CN109037156A (zh) * 2018-07-19 2018-12-18 昆山国显光电有限公司 显示面板及显示母板

Also Published As

Publication number Publication date
CN109860264A (zh) 2019-06-07

Similar Documents

Publication Publication Date Title
CN105552247B (zh) 复合基板、柔性显示装置及其制备方法
CN105226186B (zh) 柔性显示装置的制作方法及制得的柔性显示装置
CN103378314B (zh) 转移膜和使用该转移膜制造平板显示器的方法
WO2021051728A1 (zh) Oled显示面板及其制备方法
CN106057723A (zh) 微元件的转移方法、装置及电子设备
CN110491926A (zh) 显示面板、治具及利用其制备显示面板的方法
CN107221556A (zh) 用于有机发光器件的散热结构及显示装置
WO2015081654A1 (zh) 柔性显示器的制造方法以及基板结构
WO2015043165A1 (zh) 一种柔性基板及其制作方法、以及显示装置
TWI689807B (zh) 柔性面板之製作方法、柔性面板和顯示裝置
WO2021035835A1 (zh) 柔性oled显示面板的制备方法及柔性oled显示面板
CN107104132A (zh) 双面显示装置及其制备方法
CN107507929A (zh) Oled显示面板的柔性基底及其制备方法
JP2019521530A (ja) 多層型キャリアフィルムおよびこれを用いた素子の転写方法とこの方法を用いて電子製品を製造する電子製品の製造方法
WO2020232945A1 (zh) 一种显示屏及电子装置
WO2015021668A1 (zh) Oled器件的封装方法及用该方法封装的oled器件
CN106356472A (zh) Oled器件制作方法及oled器件
CN110071155A (zh) 显示面板及其封装方法、显示装置
CN107681060A (zh) 一种柔性基板及柔性oled器件
WO2020056867A1 (zh) 柔性显示面板及其制备方法
WO2020248431A1 (zh) 显示面板的制备方法及显示面板
US10008691B2 (en) Array substrate and manufacturing method thereof, display panel and display device
CN108074962A (zh) 阵列基板及其制作方法、显示面板、显示装置
WO2019014994A1 (zh) 硬化膜及其制备方法、柔性amoled显示装置
WO2019033578A1 (zh) 柔性oled显示面板的柔性基底及其制备方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19917943

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19917943

Country of ref document: EP

Kind code of ref document: A1