WO2020172955A1 - 一种oled显示面板及其制备方法 - Google Patents

一种oled显示面板及其制备方法 Download PDF

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Publication number
WO2020172955A1
WO2020172955A1 PCT/CN2019/082083 CN2019082083W WO2020172955A1 WO 2020172955 A1 WO2020172955 A1 WO 2020172955A1 CN 2019082083 W CN2019082083 W CN 2019082083W WO 2020172955 A1 WO2020172955 A1 WO 2020172955A1
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Prior art keywords
light
display panel
oled display
area
encapsulation layer
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PCT/CN2019/082083
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English (en)
French (fr)
Inventor
陈泽升
龚文亮
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/489,409 priority Critical patent/US20210366993A1/en
Publication of WO2020172955A1 publication Critical patent/WO2020172955A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/854—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/877—Arrangements for extracting light from the devices comprising scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the invention relates to the field of display technology, in particular to an OLED display panel and a preparation method thereof.
  • Polarizer can effectively reduce the reflectivity of the panel under strong light, but it will lose nearly 58% of the light. For OLED, this greatly increases its life burden; on the other hand, the thickness of the polarizer is large and the material is brittle, which is not conducive to the development of dynamic bending products.
  • An OLED display panel including:
  • a display device board which includes a display area
  • An encapsulation layer provided on the display device board.
  • a color filter substrate disposed on the encapsulation layer, the color filter substrate including a light-transmitting area and a light-shielding area, the light-transmitting area corresponding to the display area;
  • a light-transmitting area on the color filter substrate is provided with a scattering structure for scattering ambient light, and the scattering structure includes a plurality of convex particles.
  • the width of the convex particles is less than 600 nanometers.
  • the longitudinal section of the convex particles is triangular.
  • the longitudinal section of the convex particles is an isosceles triangle, and the base angle of the longitudinal section of the convex particles is greater than 45 degrees.
  • the protrusions are arranged in gaps, and the total area of all gaps between the protrusions is 0.2 to 0.5 times the total area of the light-transmitting area.
  • the longitudinal section of the convex particles is trapezoidal.
  • the present invention also provides a method for manufacturing an OLED display panel, including the following steps:
  • S10 Provide a display device board, which includes a display area
  • the width of the convex particles is less than 600 nanometers.
  • the longitudinal section of the convex particles is triangular or trapezoidal.
  • the protrusions are arranged in gaps, and the total area of all gaps between the protrusions is 0.2 to 0.5 times the total area of the light-transmitting area.
  • the scattering structure is a kind of microstructure and has a grating-like effect, thereby improving the transmittance of the color filter substrate and Reduce the surface reflection of OLED self-luminescence and ambient light, thereby improving the contrast of the OLED display panel.
  • FIG. 1 is a schematic structural diagram of an OLED display panel in a specific embodiment of the present invention.
  • FIG. 2 is a schematic structural diagram of an OLED display panel in the first embodiment of the present invention.
  • Embodiment 3 is a schematic diagram of the structure of the scattering structure in Embodiment 1 of the present invention.
  • FIG. 7 is a schematic diagram of the structure of the scattering structure in the second embodiment of the present invention.
  • FIG. 11 is a schematic structural diagram of a scattering structure in Embodiment 3 of the present invention.
  • FIG. 15 is a schematic diagram of the preparation steps of an OLED display panel in a specific embodiment of the present invention.
  • 16 to 19 are schematic diagrams of the manufacturing process of the OLED display panel in specific embodiments of the present invention.
  • Display device board 11. Substrate; 12. Semiconductor layer; 13. First gate insulating layer; 14. First gate metal layer; 15. Second gate insulating layer; 16. Second gate metal layer 17. Interlayer dielectric layer; 18. Source and drain metal layer; 19. Flat layer; 101. Pixel definition layer; 102. Light emitting function layer; 103. Display area; 20. Encapsulation layer; 30. Color film substrate; 31. Transmitting area; 32. Shading area; 40. Scattering structure; 41. Convex particles; 42, gap.
  • the present invention aims at the technical problem that the color film substrate after spin-coating or ink-jet printing in the existing OLED display panel has a relatively high reflection effect on the OLED self-luminescence and ambient light.
  • the present invention can solve the above-mentioned problems.
  • the OLED display panel includes a display device board 10, an encapsulation layer 20 arranged on the display device board 10, and a color film substrate arranged on the encapsulation layer 20 30.
  • the display device panel 10 includes a display area 103
  • the color filter substrate 30 includes a light-transmitting area 31 and a light-shielding area 32 formed by a black matrix, and the light-transmitting area 31 corresponds to the display area 103.
  • the light-transmitting area 31 on the color filter substrate 30 is provided with a scattering structure 40 that scatters ambient light.
  • the scattering structure 40 includes a plurality of convex particles 41, and the width dimension of the convex particles 41 is less than 600 nanometers. .
  • the scattering structure 40 By arranging the scattering structure 40 at the light-transmitting area 31 of the color filter substrate 30, it is known to those skilled in the art that when the size of the microstructure is smaller than a certain feature size, it can have a certain antireflection effect on the transmitted light, and the scattering structure 40 It is a kind of microstructure that has a grating-like effect, thereby increasing the transmittance of the color film substrate 30 and reducing the surface reflection of ambient light, thereby improving the contrast of the OLED display panel; using the color film substrate 30 instead of the polarizer can be The thickness of the light-emitting function layer 102 located in the display area 103 is greatly reduced, and the light output rate can be increased, thereby improving the display effect.
  • the width dimension of the bump 41 is less than 200 nanometers.
  • the size characteristics of the microstructures are designed, so that the microstructures on the surface of the color filter substrate 30 have the optimal transmittance and surface anti-reflection design.
  • the transmittance of the color filter substrate 30 is further improved, thereby further improving the contrast of the OLED display panel.
  • the display device panel 10 includes a substrate 11, a semiconductor layer 12 and a first gate insulating layer 13 arranged on the substrate 11, and a first gate arranged on the first gate insulating layer 13.
  • the metal layer 14 and the second gate insulating layer 15, the second gate metal layer 16 and the interlayer dielectric layer 17 disposed on the second gate insulating layer 15, the interlayer dielectric layer 17 The source-drain metal layer 18 and the flat layer 19, as well as the pixel definition layer 101 and the light-emitting function layer 102 disposed on the flat layer 19.
  • the first gate insulating layer 13 covers the semiconductor layer 12; the second gate insulating layer 15 covers the first gate metal layer 14; the interlayer dielectric layer 17 covers the second The gate metal layer 16; the source and drain metal layers 18 extend downward to be in contact with the ion doped region of the semiconductor layer 12; the anode metal layer of the light-emitting function layer 102 extends downward to contact the source and drain metal layers 18 connection.
  • the longitudinal section of the convex particles 41 is triangular, and the bottom side of the convex particles is arranged on the color filter substrate 30.
  • the longitudinal section of the protrusion 41 is an isosceles triangle, and the bottom angle of the longitudinal section of the protrusion 41 is greater than 45 degrees.
  • the bottom angle of the longitudinal section of the protrusion 41 is greater than 60 degrees.
  • the anti-reflection effect of the scattering structure 40 on the transmitted light is further improved, while the reflection effect on the ambient light is reduced, and the contrast of the OLED display panel is improved.
  • Figs. 4 to 6 are experimental simulation diagrams of the transmittance of the color film substrate 30 to light of different wavelengths when the bottom corners of the longitudinal section of the protrusion 41 are at different angles; ,
  • the abscissa indicates the wavelength of light.
  • FIG. 4 is a schematic diagram of the simulation when the bottom angle of the longitudinal section of the convex particle 41 is 30 degrees;
  • FIG. 5 is a schematic diagram of the simulation when the bottom angle of the longitudinal section of the convex particle 41 is 70 degrees;
  • FIG. 6 is a non-scattering structure 40 when For those skilled in the art, it can be seen from the simulation diagram that when the bottom angle of the longitudinal section of the bump 41 is 70 degrees and the oscillation amplitude of the wave line is small, the light transmittance is high.
  • the scattering structure 40 can also be made into the form of a microlens, so as to increase the transmittance of the OLED display panel from the perspective of geometric optics.
  • An OLED display panel, as shown in FIG. 7, is different from the first embodiment only in the shape of the scattering structure 40.
  • the shape of the longitudinal section of the convex particles 41 is rectangular, the convex particle gaps 42 are arranged, and the total area of all the gaps 42 between the convex particles 41 is the total area of the light-transmitting area 31 0.2 to 0.5 times.
  • the gap 42 in the scattering structure 40 have an appropriate duty cycle, the anti-reflection effect of the scattering structure 40 on the transmitted light is further improved, while the reflection effect on the ambient light is reduced, and the contrast of the OLED display panel is improved.
  • FIGS. 8 to 10 are experimental simulation diagrams of the light transmittance of the color filter substrate 30 to light of different wavelengths when the gap 42 in the scattering structure 40 has different duty ratios.
  • FIG. 8 is a schematic diagram of the simulation when there is no scattering structure
  • FIG. 9 is a schematic diagram of the simulation when the duty ratio of the gap 42 in the scattering structure 40 is 0.7
  • FIG. 10 is the simulation diagram when the duty ratio of the gap 42 in the scattering structure 40 is 0.5 Simulation diagram; for those skilled in the art, it can be seen from the simulation diagram that when the duty ratio of the gap 42 in the scattering structure 40 is 0.5, the oscillation amplitude of the wave line is small, and the light transmittance is high.
  • An OLED display panel as shown in FIG. 11, is different from the first embodiment only in the shape of the scattering structure 40.
  • the longitudinal section of the protrusion 41 is trapezoidal.
  • the longitudinal section of the protrusions 41 may be a regular trapezoid or an inverted trapezoid; the protrusions 41 may be arranged in gaps or continuously.
  • FIGS. 12 to 14 are experimental simulation diagrams of the transmittance of the color filter substrate 30 to light of different wavelengths when the longitudinal cross-sections of the convex particles 41 are of different shapes.
  • Figure 12 is a schematic diagram of the simulation when there is no scattering structure
  • Figure 13 is a schematic diagram of the simulation when the longitudinal section of the bump 41 is a regular trapezoid
  • Figure 14 is a schematic diagram of the simulation when the longitudinal section of the bump 41 is an inverted trapezoid
  • the present invention also provides a method for manufacturing an OLED display panel, as shown in FIG. 15, including the following steps:
  • S10 Provide a display device board 10, which includes a display area 103;
  • FIGS. 16 to 18 are schematic diagrams of the manufacturing process of the OLED display panel.
  • the display device panel 10 is formed.
  • a color film is provided on the encapsulation layer 20 at a position corresponding to the display area 103 by a yellow light process to form a light-transmitting area 31.
  • the prepared color film is extruded using a nano-imprint mold to form a scattering structure 40 having a characteristic size on the surface of the color film.
  • the scattering structure 40 includes a plurality of convex particles 41, and the convex The width of the particles 41 is less than 600 nanometers.
  • the width dimension of the bump 41 is less than 200 nanometers.
  • the longitudinal section of the protrusion 41 is triangular or trapezoidal.
  • the longitudinal section of the protrusion 41 is triangular
  • the longitudinal section of the protrusion 41 is an isosceles triangle
  • the base angle of the longitudinal section of the protrusion 41 is greater than 45 degrees.
  • the longitudinal section of the protrusion 41 When the longitudinal section of the protrusion 41 is a trapezoid, the longitudinal section of the protrusion 41 may be a regular trapezoid or an inverted trapezoid.
  • the protrusions 41 are arranged in gaps, and the total area of all the gaps 42 between the protrusions 41 is 0.2 to 0.5 times the total area of the light-transmitting region 31.
  • a black matrix is coated on the packaging layer 20 to form a light-shielding area 32, and the light-shielding area 32 and the light-transmitting area 31 form a color filter substrate 30.
  • the beneficial effect of the present invention is that by arranging the scattering structure 40 at the light-transmitting area 31 of the color filter substrate 30, it will be known to those skilled in the art that when the size of the microstructure is smaller than a certain characteristic size, the transmitted light can be increased to a certain extent.
  • the scattering structure 40 is a kind of microstructure, which acts like a grating, thereby increasing the transmittance of the color film substrate 30 and reducing the reflection of the surface of the OLED self-luminous and ambient light, thereby improving the contrast of the OLED display panel
  • Using the color film substrate 30 instead of the polarizer can greatly reduce the thickness of the light-emitting function layer located in the display area 103, and can increase the light output rate, thereby improving the display effect.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

本发明提供一种OLED显示面板及其制备方法，OLED显示面板包括显示器件板、设置在显示器件板上的封装层以及设置在封装层上的彩膜基板；其中，显示器件板包括显示区，彩膜基板包括透光区以及遮光区，透光区与显示区相对应；其中，彩膜基板上的透光区处设置有对环境光进行散射的散射结构，散射结构包括多个凸粒。

Description

一种OLED显示面板及其制备方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED显示面板及其制备方法。
 背景技术
偏光片（POL）能够有效地降低强光下面板的反射率，却会损失了接近58%的出光。这对于OLED来说，极大地增加了其寿命负担；另一方面，偏光片厚度较大、材质脆，不利于动态弯折产品的开发。
目前行业内由使用彩膜基板替代偏光片的的技术，这种技术能够有效提高出光率，然而对于旋涂或喷墨打印后的彩膜基板，由于其自身的性质，仍然对OLED自发光和环境光存在较高的反射作用，从而降低OLED显示面板的对比度。
 技术问题
对于旋涂或喷墨打印后的彩膜基板，对OLED自发光和环境光存在较高的反射作用。
 技术解决方案
一种OLED显示面板，包括：
显示器件板，其包括显示区；
设置在所述显示器件板上的封装层；以及
设置在所述封装层上的彩膜基板，所述彩膜基板包括透光区和遮光区，所述透光区与所述显示区相对应；
其中，所述彩膜基板上的透光区处设置有对环境光进行散射的散射结构，所述散射结构包括多个凸粒。
进一步的，所述凸粒的宽度小于600纳米。
进一步的，所述凸粒的纵截面呈三角形。
进一步的，所述凸粒的纵截面呈等腰三角形，并且，所述凸粒的纵截面的底角大于45度。
进一步的，所述凸粒间隙排布，所述凸粒之间的所有间隙的总面积为所述透光区的总面积的0.2～0.5倍。
进一步的，所述凸粒的纵截面呈梯形。
本发明还提供一种OLED显示面板的制备方法，包括以下步骤：
S10、提供一显示器件板，其包括显示区；
S20、在所述显示器件板上形成封装层；
S30、在所述封装层上与显示区对应的位置处设置彩膜，以形成透光区；
S40、对所述彩膜进行图案化处理，以在所述彩膜上形成包括多个凸粒的散射结构；
S50、在所述封装层上涂布黑色矩阵，以形成遮光区。
进一步的，所述凸粒的宽度小于600纳米。
进一步的，所述凸粒的纵截面呈三角形或梯形。
进一步的，所述凸粒间隙排布，所述凸粒之间的所有间隙的总面积为所述透光区的总面积的0.2～0.5倍。
有益效果
通过在彩膜基板的透光区处设置散射结构，可以对透射光起到一定的增透作用，散射结构是一种微结构，具有类光栅的作用，从而提高彩膜基板的透过率以及减小表面对OLED自发光和环境光的反射作用，从而提升OLED显示面板的对比度。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明具体实施方式中OLED显示面板的结构示意图；
图2为本发明实施例一中OLED显示面板的结构示意图；
图3为本发明实施例一中散射结构的结构示意图；
图4至图6为本发明实施例一中凸粒的纵截面的底角呈不同角度时，彩膜基板对不同波长光的透光率的实验仿真图；
图7为本发明实施例二中散射结构的结构示意图；
图8至图10本发明实施例二中散射结构中间隙具有不同的占空比时，彩膜基板对不同波长光的透光率的实验仿真图；
图11为本发明实施例三中散射结构的结构示意图；
图12至图14为本发明实施例三中凸粒的纵截面为不同形状时，彩膜基板对不同波长光的透光率的实验仿真图；
图15为本发明具体实施方式中OLED显示面板的制备步骤示意图；
图16至图19为本发明具体实施方式中OLED显示面板的制备流程示意图。
附图标记：
10、显示器件板；11、基板；12、半导体层；13、第一栅极绝缘层；14、第一栅极金属层；15、第二栅极绝缘层；16、第二栅极金属层；17、层间介质层；18、源漏金属层；19、平坦层；101、像素定义层；102、发光功能层；103、显示区；20、封装层；30、彩膜基板；31、透光区；32、遮光区；40、散射结构；41、凸粒；42、间隙。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有的OLED显示面板中，对于旋涂或喷墨打印后的彩膜基板，对OLED自发光和环境光存在较高的反射作用的技术问题。本发明可以解决上述问题。
实施例一：
一种OLED显示面板，如图1和图2，所述OLED显示面板包括显示器件板10、设置在所述显示器件板10上的封装层20以及设置在所述封装层20上的彩膜基板30。
其中，所述显示器件板10包括显示区103，所述彩膜基板30包括透光区31以及由黑色矩阵形成的遮光区32，所述透光区31与所述显示区103相对应。
其中，所述彩膜基板30上的透光区31处设置有对环境光进行散射的散射结构40，所述散射结构40包括多个凸粒41，所述凸粒41的宽度尺寸小于600纳米。
通过在彩膜基板30的透光区31处设置散射结构40，对于本领域技术人员可知，当微结构的尺寸小于一定特征尺寸后，可以对透射光起到一定的增透作用，散射结构40是一种微结构，具有类光栅作用，从而提高彩膜基板30的透过率以及减小表面对环境光的反射作用，从而提升OLED显示面板的对比度；使用彩膜基板30替代偏光片，可以大大降低位于显示区103的发光功能层102的厚度，而且能够提高出光率，从而提高显示效果。
在一实施方式中，所述凸粒41的宽度尺寸小于200纳米。
在彩膜基板30的表面制作微结构的基础上，对微结构的尺寸特征特性进行设计，从而使彩膜基板30的表面上的微结构具有最优的透过率及表面减反射设计，可进一步提升彩膜基板30的透过率，从而进一步提升OLED显示面板的对比度。
具体的，所述显示器件板10包括基板11、设置在所述基板11上的半导体层12和第一栅极绝缘层13、设置在所述第一栅极绝缘层13上的第一栅极金属层14和第二栅极绝缘层15、设置在所述第二栅极绝缘层15上的第二栅极金属层16和层间介质层17、设置在所述层间介质层17上的源漏金属层18和平坦层19，以及，设置在所述平坦层19上的像素定义层101和发光功能层102。
其中，所述第一栅极绝缘层13覆盖所述半导体层12；所述第二栅极绝缘层15覆盖所述第一栅极金属层14；所述层间介质层17覆盖所述第二栅极金属层16；所述源漏金属层18向下延伸与所述半导体层12的离子掺杂区接触连接；所述发光功能层102的阳极金属层向下延伸与源漏金属层18接触连接。
如图3所示，所述凸粒41的纵截面呈三角形，并且，所述凸粒的底边设置在所述彩膜基板30上。
进一步的，所述凸粒41的纵截面呈等腰三角形，并且，所述凸粒41的纵截面的底角大于45度。
在一实施方式中，所述凸粒41的纵截面的底角大于60度。进一步提高散射结构40对透射光的增透作用，同时降低对环境光的反射作用，提高OLED显示面板的对比度。
需要说明的是，参见图4至图6，图4至图6为凸粒41的纵截面的底角呈不同角度时，彩膜基板30对不同波长光的透光率的实验仿真图；其中，横坐标示意光的波长，图中波线的震荡幅度越小，光透过率越高，震荡幅度为相邻的波峰与波谷之间的间距。
其中，图4为凸粒41的纵截面的底角呈30度时的仿真示意图；图5为凸粒41的纵截面的底角呈70度时的仿真示意图；图6为无散射结构40时的仿真示意图；对于本领域技术人员，从仿真图中可看出当凸粒41的纵截面的底角呈70度，波线的震荡幅度小，则光透过率高。
需要说明的是，在一实施方式中，散射结构40也可以做成微透镜的形式，从而从几何光学的角度提高OLED显示面板的透过率。
实施例二：
一种OLED显示面板，如图7所示，其与实施例一的不同之处仅在于所述散射结构40的形状不同。
具体的，所述凸粒41的纵截面的形状呈矩形，所述凸粒间隙42排布，所述凸粒41之间的所有间隙42的总面积为所述透光区31的总面积的0.2～0.5倍。
通过使散射结构40中间隙42具有合适的占空比，进一步提高散射结构40对透射光的增透作用，同时降低对环境光的反射作用，提高OLED显示面板的对比度。
需要说明的是，参见图8至图10，图8至图10为散射结构40中间隙42具有不同的占空比时，彩膜基板30对不同波长光的透光率的实验仿真图。
其中，图8为无散射结构时的仿真示意图；图9为散射结构40中间隙42的占空比为0.7时的仿真示意图；图10为散射结构40中间隙42的占空比为0.5时的仿真示意图；对于本领域技术人员，从仿真图中可看出当散射结构40中间隙42的占空比为0.5时，波线的震荡幅度小，则光透过率高。
实施例三：
一种OLED显示面板，如图11所示，其与实施例一的不同之处仅在于所述散射结构40的形状不同。
具体的，所述凸粒41的纵截面呈梯形。
需要说明的是，所述凸粒41的纵截面可以为正梯形，也可以为倒梯形；所述凸粒41可以间隙排布，也可以连续排布。
需要说明的是，参见图12至图14，图12至图14为凸粒41的纵截面为不同形状时，彩膜基板30对不同波长光的透光率的实验仿真图。
图12为无散射结构时的仿真示意图；图13为凸粒41的纵截面为正梯形时的仿真示意图；图14为凸粒41的纵截面为倒梯形时的仿真示意图；由图中可得知，凸粒41的纵截面为倒梯形或正梯形时，波线的震荡幅度小，则光透过率高。
实施例四：
基于上述OLED显示面板，本发明还提供一种OLED显示面板的制备方法，如图15所示，包括以下步骤：
S10、提供一显示器件板10，其包括显示区103；
S20、在所述显示器件板10上形成封装层20；
S30、在所述封装层20上与显示区103对应的位置处设置彩膜，以形成透光区31；
S40、对所述彩膜进行图案化处理，以在所述彩膜上形成包括多个凸粒41的散射结构40；
S50、在所述封装层20上涂布黑色矩阵，以形成遮光区32。
参见图16至图18，图16至图18为所述OLED显示面板的制备流程示意图。
如图16所示，形成所述显示器件板10。
如图17所示，在所述显示器件板10上形成封装层20后，在所述封装层20上与所述显示区103对应的位置处通过黄光制程设置彩膜，以形成透光区31。
如图18所示，将制备好的彩膜使用纳米压印模具挤压的方式在彩膜的表面形成具有特征尺寸的散射结构40，所述散射结构40包括多个凸粒41，所述凸粒41的宽度小于600纳米。
进一步的，所述凸粒41的宽度尺寸小于200纳米。
在一实施方式中，所述凸粒41的纵截面呈三角形或梯形。
进一步的，所述凸粒41的纵截面呈三角形时，所述凸粒41的纵截面为等腰三角形，并且，所述凸粒41的纵截面的底角大于45度。
所述凸粒41的纵截面呈梯形时，所述凸粒41的纵截面可以为正梯形，也可以为倒梯形。
在另一实施方式中，所述凸粒41间隙排布，所述凸粒41之间的所有间隙42的总面积为所述透光区31的总面积的0.2～0.5倍。
如图19所示，在所述封装层20上涂布黑色矩阵，以形成遮光区32，遮光区32与透光区31组成彩膜基板30。
本发明的有益效果为：通过在彩膜基板30的透光区31处设置散射结构40，对于本领域技术人员可知，当微结构尺寸小于一定特征尺寸后，可以对透射光起到一定的增透作用，散射结构40是一种微结构，具有类光栅的作用，从而提高彩膜基板30的透过率以及减小表面对OLED自发光和环境光的反射作用，从而提升OLED显示面板的对比度；使用彩膜基板30替代偏光片，可以大大降低位于显示区103的发光功能层的厚度，而且能够提高出光率，从而提高显示效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种OLED显示面板，其中，所述OLED显示面板包括：
    显示器件板，其包括显示区；
    设置在所述显示器件板上的封装层；以及
    设置在所述封装层上的彩膜基板，所述彩膜基板包括透光区和遮光区，所述透光区与所述显示区相对应；
    其中，所述彩膜基板上的透光区处设置有对环境光进行散射的散射结构，所述散射结构包括多个凸粒。
  2. 根据权利要求1所述的OLED显示面板，其中，所述凸粒的宽度小于600纳米。
  3. 根据权利要求1所述的OLED显示面板，其中，所述凸粒的纵截面呈三角形。
  4. 根据权利要求3所述的OLED显示面板，其中，所述凸粒的纵截面呈等腰三角形，并且，所述凸粒的纵截面的底角大于45度。
  5. 根据权利要求1所述的OLED显示面板，其中，所述凸粒间隙排布，所述凸粒之间的所有间隙的总面积为所述透光区的总面积的0.2～0.5倍。
  6. 根据权利要求1所述的OLED显示面板，其中，所述凸粒的纵截面呈梯形。
  7. 一种OLED显示面板的制备方法，其中，包括以下步骤：
    S10、提供一显示器件板，其包括显示区；
    S20、在所述显示器件板上形成封装层；
    S30、在所述封装层上与显示区对应的位置处设置彩膜，以形成透光区；
    S40、对所述彩膜进行图案化处理，以在所述彩膜上形成包括多个凸粒的散射结构；
    S50、在所述封装层上涂布黑色矩阵，以形成遮光区。
  8. 根据权利要求7所述的OLED显示面板的制备方法，其中，所述凸粒的宽度小于600纳米。
  9. 根据权利要求7所述的OLED显示面板的制备方法，其中，所述凸粒的纵截面呈三角形或梯形。
  10. 根据权利要求7所述的OLED显示面板的制备方法，其中，所述凸粒间隙排布，所述凸粒之间的所有间隙的总面积为所述透光区的总面积的0.2～0.5倍。
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