WO2020162459A1 - Condensateur - Google Patents

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Publication number
WO2020162459A1
WO2020162459A1 PCT/JP2020/004147 JP2020004147W WO2020162459A1 WO 2020162459 A1 WO2020162459 A1 WO 2020162459A1 JP 2020004147 W JP2020004147 W JP 2020004147W WO 2020162459 A1 WO2020162459 A1 WO 2020162459A1
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Prior art keywords
layer
capacitor
base material
pores
lower electrode
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PCT/JP2020/004147
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English (en)
Inventor
Masakazu Takao
Yasuhiro Murase
Sandrine MADASSAMY
Frederic Voiron
Aude Lefevre
Original Assignee
Murata Manufacturing Co., Ltd.
Commissariat A L'energie Atomique Et Aux Energies Alternatives
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Application filed by Murata Manufacturing Co., Ltd., Commissariat A L'energie Atomique Et Aux Energies Alternatives filed Critical Murata Manufacturing Co., Ltd.
Publication of WO2020162459A1 publication Critical patent/WO2020162459A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/012—Form of non-self-supporting electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/33—Thin- or thick-film capacitors 
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
    • H01L28/90—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions
    • H01L28/92—Electrodes with an enlarged surface, e.g. formed by texturisation having vertical extensions made by patterning layers, e.g. by etching conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/002—Details
    • H01G4/005—Electrodes
    • H01G4/008—Selection of materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
    • H01G9/045—Electrodes or formation of dielectric layers thereon characterised by the material based on aluminium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/004—Details
    • H01G9/04—Electrodes or formation of dielectric layers thereon
    • H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure

Definitions

  • the present invention relates to a capacitor.
  • Patent Literature 1 US Pat. No. 8,912,522
  • tungsten layer as such a barrier layer, but in this case, when a pore is formed by the anodic oxidation to penetrate the aluminum, the tungsten layer exposed to the bottom of the pore can also be oxidized. Since such tungsten oxide has low conductivity, the lower electrode in the pore and the conductive layer are electrically cut off. Accordingly, it becomes necessary to remove the barrier layer at the pore bottom, and the manufacturing process will be complicated. In addition, the barrier layer at the pore bottom can be removed by etching, but in order to remove only this tungsten oxide, it is necessary to select the etching solution and set other conditions.
  • An object of the present disclosure is to provide a capacitor including a fine pore structure, without requiring the above-mentioned barrier layer removal step.
  • a capacitor including: a base material including a pore structure part; a metal layer provided on one main surface of the base material; an extended layer provided on the metal layer; a lower electrode layer provided on surfaces of pores in the pore structure part; a dielectric layer provided on the lower electrode layer; and an upper electrode layer provided on the dielectric layer, where at least some of the pores penetrate the base material, the metal layer has a sealing part that seals one opening of a pore that penetrates, and the sealing part is conductive, and the lower electrode layer is electrically connected to the extended layer through the sealing part of the metal layer.
  • the base material is an aluminum base material, and is oxidized in the pore structure part.
  • a capacitor can be provided which is low in equivalent series resistance and easy to manufacture.
  • capacitor according to the present disclosure will be described in detail below with reference to the drawings.
  • the capacitor according to the present embodiment, and the shapes and arrangement of respective constructional elements are not limited to the examples shown in the figures.
  • FIG. 1 A cross-sectional view of a capacitor 1 according to the present embodiment is schematically shown in FIG. 1.
  • the capacitor 1 schematically includes a base material 2, a metal layer 3 provided on one main surface of the base material 2, and an extended layer 4 provided on the metal layer 3, a lower electrode layer 6 provided on the surfaces of pores 5 of the base material 2, a dielectric layer 7 provided on the lower electrode layer 6, and an upper electrode layer 8 provided on the dielectric layer 7. Furthermore, the capacitor 1 according to the present embodiment includes: an upper extended electrode 11 provided on the upper electrode layer 8 and a first external electrode 12 provided on the upper extended electrode 11; and a second external electrode 13 electrically insulated from the upper extended electrode 11 and the first external electrode 12 and electrically connected to the base material 2.
  • the base material 2 has a pore structure part 16 and a non-pore structure part 17.
  • the pore structure part 16 is not conductive, and the non-pore structure part 17 is conductive.
  • the pore structure part 16 has a plurality of pores 5 formed, and at least some of the pores 5 penetrate the base material 2.
  • One opening of the through-pore is sealed with the metal layer 3.
  • the metal layer 3 has a sealing part 18 that seals the opening of the pore 5.
  • the sealing part 18 has an oxidized state, but has conductivity.
  • the lower electrode layer 6-dielectric layer 7-upper electrode layer 8 constitute an MIM capacitor structure, and charge can be accumulated in the dielectric layer 7 by applying a voltage between the lower electrode layer 6 and the upper electrode layer 8.
  • the lower electrode layer 6 is electrically connected to the extended layer 4 through the sealing part 18 of the metal layer 3.
  • the extended layer 4 is electrically connected to a non-pore structure part 17 of the base material 2 through the metal layer 3.
  • the non-pore structure part 17 of the base material 2 is electrically connected to the second external electrode 13.
  • the upper electrode layer 8 is electrically connected to the upper extended electrode 11, and the upper extended electrode 11 is electrically connected to the external electrode 12. More specifically, in the capacitor 1 according to the present embodiment, the current on the side with the lower electrode layer 6 flows through in the order of lower electrode layer 6 - metal layer 3 (specifically sealing part 18) - extended layer 4 - metal layer 3 - non-pore structure part 17 of base material 2 - second external electrode 13 (or vice versa).
  • the current may partially flow through in the order of lower electrode layer 6 - metal layer 3 - non-pore structure part 17 of base material 2 - second external electrode 13, without passing through the extended layer 4.
  • the current on the side with the upper electrode layer 8 flows through in the order of upper electrode layer 8 - upper extended electrode 11 - external electrode 12 (or vice versa).
  • the capacitor 1 as mentioned above is manufactured, for example, as follows.
  • a layer 34 corresponding to the extended layer 4 is formed , a barrier layer 33 corresponding to the metal layer 3 is formed thereon, and a base layer 32 corresponding to the base material 2 is further formed thereon (FIG. 2).
  • the substrate 30 supports the base layer 32, the barrier layer 33, and the extended layer 34. After the capacitor is manufactured, the substrate 30 supports the base material 2, the metal layer 3, and the extended layer 4. The substrate 30 may be removed after manufacturing the capacitor.
  • the substrate 30 is not particularly limited, but a silicon wafer is preferably used.
  • the material constituting the extended layer 34 is not particularly limited as long as the material is conductive, and examples thereof include Al, Cu, Ag, Ti, Ta, or alloys thereof such as AlCu, or nitrides TiN and TaN.
  • the extended layer 34 may be a single layer, or may be multi-layer, for example, two-layer or three-layer.
  • the extended layer 34 is a single layer.
  • the extended layer 34 is multi-layer, and can be preferably a three-layer structure of TiN-AlCu-TiN.
  • the thickness of the extended layer 34 (the total in the case of a multi-layer) can be, for example, 0.5 ⁇ m or more and 20 ⁇ m or less, preferably 1 ⁇ m or more and 10 ⁇ m or less, more preferably 2 ⁇ m or more and 5 ⁇ m or less.
  • the thickness of the layer is adjusted to 0.5 ⁇ m or more, thereby allowing the equivalent series resistance to be reduced.
  • the thickness of the layer is increased, thereby allowing the equivalent series resistance to be further reduced.
  • the thickness of the layer is adjusted to 20 ⁇ m or less, thereby allowing the capacitor to be further reduced in height.
  • the method for forming the extended layer 34 is not particularly limited, and physical vapor deposition (PVD), chemical vapor deposition (CVD), sputtering, plating, and the like can be used.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • sputtering plating, and the like
  • plating plating, and the like
  • PVD or CVD is used.
  • the barrier layer 33 prevents etching from proceeding to the extended layer 4 in a subsequent step, i.e., a step of etching the base layer 32 by anodic oxidation.
  • a subsequent step i.e., a step of etching the base layer 32 by anodic oxidation.
  • the barrier layer 33 exposed to an etching solution at the bottoms of the through pores is oxidized to serve as the sealing part 18.
  • Examples of the material constituting the barrier layer 33 corresponding to the metal layer 3 include Ru, Re, Sn, Ti, V, Fe, Li-Ti alloys, Li-V alloys, or Na-W alloys.
  • the thickness of the barrier layer 33 can be, for example, 100 nm or more and 2.0 ⁇ m or less, preferably 150 nm or more and 1.0 ⁇ m or less, more preferably 200 nm or more and 500 nm or less.
  • the thickness of the layer is adjusted to 100 nm or more, thereby making it possible to achieve the effect of preventing the etching from proceeding. The effect mentioned above can be further enhanced by increasing the thickness of the layer.
  • the thickness of the layer is adjusted to 2.0 ⁇ m or less, the thickness of the sealing part 18 after the capacitor formation is also 2.0 ⁇ m or less, thereby allowing the resistance between the lower electrode layer 6 and the extended layer 4 to be reduced. Reducing the thickness of the layer also reduces the thickness of the sealing part 18 after the capacitor formation, thereby allowing the resistance between the lower electrode layer 6 and the extended layer 4 to be further reduced.
  • the method for forming the barrier layer 33 is not particularly limited, and physical vapor deposition (PVD), chemical vapor deposition (CVD), sputtering, plating, and the like can be used.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • sputtering plating, and the like
  • plating plating, and the like
  • PVD or CVD is used.
  • Examples of the material constituting the layer 32 corresponding to the base material 2 include Al, Ti, Nb, Mg, Zn, Fe, W, Zr, or Ta. Preferably, the material is Al.
  • the thickness of the base layer 32 can be, for example, 1 ⁇ m or more and 100 ⁇ m or less, preferably 5 ⁇ m or more and 50 ⁇ m or less, more preferably 8 ⁇ m or more and 30 ⁇ m or less.
  • the thickness of the layer is adjusted to 1 ⁇ m or more, thereby increasing the depth of pores to be formed later, and then increasing the capacitance of the capacitor obtained.
  • the increased thickness of the layer can further increase the capacitance of the capacitor.
  • the thickness of the layer is adjusted to 100 ⁇ m or less, thereby allowing the capacitor to be reduced in thickness, and makes it easier to form pores.
  • the method for forming the base layer 32 is not particularly limited, and physical vapor deposition (PVD), chemical vapor deposition (CVD), sputtering, plating, and the like can be used.
  • PVD physical vapor deposition
  • CVD chemical vapor deposition
  • sputtering plating, and the like
  • plating plating, and the like
  • PVD or CVD is used.
  • the material constituting the mask 44 corresponding to a part of the insulating part 14 is not particularly limited as long as the material is resistant to an etching agent for use in the subsequent etching step, and examples of the material include SiO 2 , SiN, or SiON. Preferably, the material is SiO 2 .
  • the thickness of the mask 44 can be, for example, 0.1 ⁇ m or more and 10 ⁇ m or less, preferably 0.5 ⁇ m or more and 5 ⁇ m or less, for example, 1 ⁇ m or more and 3 ⁇ m or less.
  • the thickness of the layer is adjusted to 0.1 ⁇ m or more, thereby allowing the base layer 32 in the mask part to be prevented from being etched.
  • the thickness of the mask 44 is further increased, thereby allowing the etching to be prevented more reliably from proceeding, and allowing the insulation property to be further improved.
  • the thickness of the mask 44 is adjusted to 10 ⁇ m or less, thereby allowing the capacitor to be further reduced in thickness.
  • the method for forming the mask 44 is not particularly limited, and examples of the method include a vacuum vapor deposition method, a chemical vapor deposition method, a sputtering method, an atomic layer deposition (ALD), and a pulsed laser deposition method (PLD).
  • the mask can be obtained by forming a mask layer on the entire base layer 32 and then removing, by etching or the like, the mask layer on the part where the pore structure part 16 is to be formed.
  • the mask 44 may be formed selectively at a site to be protected.
  • the base layer 32 is etched by anodic oxidation to form the pore structure part 16 in the base layer 32 (FIG. 4).
  • the conditions for the anodic oxidation treatment such as the etching solution, the temperature, the time, the current density, and the voltage, for example, can be selected depending on the material of the base layer 32, the desired pore structure, and the like.
  • the etching solution is an etching solution that is capable of etching the base layer 32, but does not etch the barrier layer 33.
  • an etching solution for example, an oxalic acid, a phosphoric acid, a sulfuric acid, a chromic acid, or the like can be used.
  • the etching solution is preferably an oxalic acid.
  • a preferred combination of the etching solution, the material constituting the base layer 32, and the material constituting the barrier layer 33 is that: the etching solution is an oxalic acid; the material constituting the base layer 32 is Al; and the material constituting the barrier layer 33 is Ru.
  • the etching step anodically oxidizes a part of the base layer 32 to form the pore structure part 16.
  • the part which is not anodically oxidized because of the masking serves as the non-pore structure part 17.
  • the base layer 32 is an aluminum layer, and after the etching step, the treated part becomes anodized aluminum and constitutes the pore structure part 16.
  • the untreated part remains aluminum and constitutes the non-pore structure part 17.
  • the base layer 32 serves as the base material 2 composed of the pore structure part 16 and the non-pore structure part 17 after the etching step.
  • the pore structure part 16 formed by the etching step has a large number of pores formed. At least some of the pores penetrate the base layer 32 and reach the barrier layer 33. According to a preferred aspect, 80% or more, preferably 90% or more, more preferably 98% or more of the pores penetrate through the base layer 32. According to a preferred embodiment, when the pore structure part 16 is planarly viewed from the main surface where the base layer 32 is started to be etched, in a region of 10 ⁇ m or more inside, preferably 5 ⁇ m or more inside, more preferably 1 ⁇ m or more inside from the boundary between the pore structure part 16 and the non-pore structure part 17, 90% or more, preferably substantially all of the pores penetrate the base layer 32. In this regard, the boundary between the pore structure part 16 and the non-pore structure part 17 refers to the boundary between the region oxidized by the anodic oxidation and the region which is not oxidized.
  • the shape of the pore 5 is not particularly limited. According to a preferred embodiment, the pore 5 has a cylindrical shape with an axis in the thickness direction of the base material 2.
  • the width of the pore 5 (the diameter in the case of a cylindrical shape) is preferably 5 nm or more and 300 nm or less, more preferably 20 nm or more and 200 nm or less.
  • the density of the pores 5 is not particularly limited, but is preferably 1 ⁇ 10 8 pores/cm 2 or more and 1 ⁇ 10 12 pores/cm 2 or less, more preferably 1 ⁇ 10 9 pores/cm 2 or more and 1 ⁇ 10 11 pores/cm 2 or less.
  • the barrier layer 33 is not etched even in a case where the layer is exposed to the etching solution in the etching step. More specifically, the barrier layer 33 has the function of keeping the etching from proceeding, and seals one opening of the pore 5 to form the sealing part 18.
  • a part of the barrier layer 33 exposed to the etching solution, that is, the sealing part 18 can be oxidized. In a case where the sealing part 18 is not sufficiently oxidized, and is preferably further oxidized, the sealing part 18 may be further oxidized by heating or the like.
  • the barrier layer 33 in the capacitor according to the present disclosure is made of a metal with conductivity, even in a case where the layer is oxidized in the etching step. More specifically, both the sealing part 18 and the other part 19 of the barrier layer 33 have conductivity after the etching step.
  • the metal constituting the barrier layer 33 include Ru, Re, Sn, Ti, V, Fe, Li-Ti alloys, Li-V alloys, or Na-W alloys, and preferably, examples of respective oxides of the metals includes RuO 2 , ReO 3 , SnO 2 , TiO 2 , V 2 O 3 , Fe 3 O 4 , LiTi 2 O 4 , LiV 2 O 4 , and NaWO 3 .
  • the use of the metal mentioned above as the metal constituting the barrier layer 33 ensure, even if the sealing part 18 is present between the lower electrode layer 6 of the capacitor structure to be subsequently formed in the pores 5 and the extended layer 4, the electrical connection between the lower electrode layer 6 and the extended layer 4.
  • a material that conducts no electricity when the material is oxidized such as tungsten
  • the sealing part 18 has conductivity, and the electrical connection between the lower electrode layer 6 and the extended layer 4 can be thus ensured without removing the sealing part 18. More specifically, the capacitor according to the present disclosure is easy to manufacture.
  • a mask 45 is formed which covers a region of the pore structure part 16 where there are pores that do not penetrate the base layer 32 and pores that penetrate the base layer 32 but have pore axes greatly inclined with respect to the thickness direction of the base layer 32 (FIG. 5).
  • the pores with the axes greatly inclined preferably refer to pores which are preferably 30° or more, more preferably 20° or more, even more preferably 10° or more inclined with respect to the thickness direction of the base layer 32, preferably . Since the pores that do not penetrate and the pores with the axes inclined have variations in pore depth (length), there is a possibility that the surface area may vary, and thus, the electrical characteristics of the capacitor may vary. Covering such pores with the mask 45 makes it possible to obtain a capacitor with small variations in electrical characteristics.
  • the material constituting the mask 45 is not limited as long as the material is resistant to the subsequent layer formation step, typically an atomic layer deposition step, and examples of the material include SiO 2 , SiN, or SiON. Preferably, the material is SiO 2 .
  • the mask 45 is made of the same material as the mask 44.
  • the mask 44 and the mask 45 are made of the same material, thereby improving the adhesion between both the layers, and allowing the generation of stress between both the layers to be suppressed.
  • the mask 44 and the mask 45 are both SiO 2 .
  • the thickness of the mask 45 can be, for example, 0.1 ⁇ m or more and 10 ⁇ m or less, preferably 0.5 ⁇ m or more and 5 ⁇ m or less, for example, 1 ⁇ m or more and 3 ⁇ m or less.
  • the thickness of the layer is adjusted to 0.1 ⁇ m or more, thereby allowing the base layer 32 in the mask part to be prevented from being etched.
  • the thickness of the mask 44 is further increased, thereby allowing the etching to be prevented more reliably from proceeding, and allowing the insulation property to be further improved.
  • the thickness of the mask 44 is adjusted to 10 ⁇ m or less, thereby allowing the capacitor to be further reduced in thickness.
  • the method for forming the mask 45 is not particularly limited, and examples of the method include a vacuum vapor deposition method, a chemical vapor deposition method, a sputtering method, ALD, and PLD.
  • an MIM structure is formed on the base layer 32 (base material 2) including the inside of the pores 5 (FIG. 6).
  • the lower electrode layer 6 is formed.
  • the material that forms the lower electrode layer 6 mentioned above is not particularly limited as long as the material is conductive, and examples of the material include Ni, Cu, Al, W, Ti, Ag, Au, Pt, Zn, Sn, Pb, Fe, Cr, Mo, Ru, Pd, and Ta and alloys thereof, e.g., CuNi, AuNi, AuSn, and metal oxides and metal oxynitrides such as TiN, TiAlN, TiON, TiAlON, and TaN.
  • the thickness of the lower electrode layer 6 is not particularly limited, but is preferably 10 to 50 nm, for example.
  • the thickness of the lower electrode layer is increased, for example, to 10 nm or more, allowing the ESR to be further reduced.
  • the thickness of the lower electrode layer is decreased, for example, to 50 nm or less, thereby making it possible to form a MIM structure without filling the pores, that is, without reducing the surface area of the base material 2, and allowing high capacitance to be achieved.
  • the method for forming the lower electrode layer 6 is not particularly limited, and examples of the method include a vacuum vapor deposition method, a chemical vapor deposition method, a sputtering method, ALD, and PLD.
  • the ALD is preferred, because the ALD can form a more homogeneous and denser film even in microscopic regions of the pores.
  • the dielectric layer 7 is formed on the lower electrode layer 6.
  • the material that forms the dielectric layer 7 mentioned above is not particularly limited as long as the material has an insulating property, but examples thereof preferably include metal oxides such as AlO x (e.g., Al 2 O 3 ), SiO x (e.g., SiO 2 ), AlTiO x , SiTiO x , HfO x , TaO x , ZrO x , HfSiO x , ZrSiO x , TiZrO x , TiZrWO x , TiO x , SrTiO x , PbTiO x , BaTiO x , BaSrTiO x , BaCaTiO x , and SiAlO x ; metal nitrides such as AlN x , SiN x , and AlScN x ; or metal oxynitrides such as AlO x N y , SiO x N
  • the formulas mentioned above are merely intended to represent the constitutions of the materials, but not intended to limit the compositions. More specifically, the x, y, and z attached to O and N may have any value larger than 0, and the respective elements including the metal elements may have any presence proportion.
  • the thickness of the dielectric layer 7 mentioned above is not particularly limited, but for example, preferably 5 nm or more and 100 nm or less, more preferably 10 nm or more and 50 nm or less.
  • the dielectric layer of 5 nm or more in thickness can increase the insulating property, and thus allows leakage current to be reduced.
  • the dielectric layer of 100 nm or less in thickness makes it possible to achieve higher electrostatic capacitance.
  • the method for forming the dielectric layer 7 is not particularly limited, and examples of the method include a vacuum vapor deposition method, a chemical vapor deposition method, a sputtering method, ALD, and PLD.
  • the ALD is preferred, because the ALD can form a more homogeneous and denser film even in microscopic regions of the pores.
  • the upper electrode layer 8 is formed on the dielectric layer 7.
  • the material constituting the upper electrode layer 8 mentioned above is not particularly limited as long as the material is conductive, and examples of the material include Ni, Cu, Al, W, Ti, Ag, Au, Pt, Zn, Sn, Pb, Fe, Cr, Mo, Ru, Pd, and Ta and alloys thereof, e.g., CuNi, AuNi, AuSn, and metal oxides and metal oxynitrides such as TiN, TiAlN, TiON, TiAlON, and TaN.
  • the thickness of the upper electrode layer 8 is not particularly limited, but is preferably 10 to 50 nm, for example.
  • the thickness of the lower electrode layer is increased, for example, to 10 nm or more, allowing the ESR to be further reduced.
  • the method for forming the lower electrode layer 6 is not particularly limited, and examples of the method include a vacuum vapor deposition method, a chemical vapor deposition method, a sputtering method, ALD, and PLD.
  • the ALD is preferred, because the ALD can form a more homogeneous and denser film even in microscopic regions of the pores.
  • the upper extended electrode 11 is formed on the upper electrode layer 8 (FIG. 7).
  • the material constituting the upper extended electrode 11 mentioned above is not particularly limited as long as the material has a conductive property, but examples of the material include Ni, Cu, Al, W, Ti, Ag, Au, Pt, Zn, Sn, Pb, Fe, Cr, Mo, Ru, Pd, and Ta and alloys thereof, e.g., CuNi, AuNi, AuSn, metal oxides and metal oxynitrides such as TiN, TiAlN, TiON, TiAlON, TaN, and electrically conductive polymers (for example, PEDOT (poly(3,4-ethylenedioxythiophene)), polypyrrole, polyaniline).
  • PEDOT poly(3,4-ethylenedioxythiophene)
  • polypyrrole polyaniline
  • the thickness of the upper extended electrode 11 is not particularly limited, but for example, preferably 3 nm or more, more preferably 10 nm or more.
  • the upper extended electrode of 3 nm or more in thickness can reduce the resistance of the upper extended electrode itself.
  • the upper extended electrode 11 may be formed so as to fill the inside of the pores 5. The ESR is further reduced by filling the inside of the pores with the upper extended electrode.
  • the upper extended electrode 11 may be formed by a method such as a chemical vapor deposition method, a plating method, a bias sputtering method, a Sol-Gel method, conductive polymer filling, or ALD. Moreover, multiple methods may be combined for the formation.
  • the materials constituting the first external electrode 12 and second external electrode 13 are not particularly limited, but examples of the materials include metals such as Au, Pb, Ag, Sn, Ni, and Cu, and alloys thereof, and electrically conductive polymers.
  • the method for forming the first external electrode 12 and the second external electrode 13 is not particularly limited, but for example, CVD, electrolytic plating, electroless plating, vapor deposition, sputtering, conductive paste baking, and the like can be used, and electrolytic plating, electroless plating, vapor deposition, sputtering, and the like are preferred.
  • the capacitor according to the present disclosure is small in size, high in capacitance, and further low in equivalent series resistance, and thus can be used for various applications.

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  • Microelectronics & Electronic Packaging (AREA)
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  • Semiconductor Integrated Circuits (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

La présente invention concerne un condensateur comprenant : un matériau de base comprenant une partie de structure poreuse ; une couche métallique disposée sur une surface principale du matériau de base ; une couche étendue disposée sur la couche métallique ; une couche d'électrode inférieure disposée sur des surfaces de pores dans la partie de structure poreuse ; une couche diélectrique disposée sur la couche d'électrode inférieure ; et une couche d'électrode supérieure disposée sur la couche diélectrique. Au moins une partie des pores pénètrent dans le matériau de base, la couche métallique comporte une partie d'étanchéité qui scelle une ouverture d'un pore qui pénètre, et la partie d'étanchéité est conductrice. De plus, la couche d'électrode inférieure est reliée électriquement à la couche étendue à travers la partie d'étanchéité de la couche métallique.
PCT/JP2020/004147 2019-02-04 2020-02-04 Condensateur WO2020162459A1 (fr)

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EP4060697A1 (fr) * 2021-03-18 2022-09-21 Commissariat à l'énergie atomique et aux énergies alternatives Dispositif capacitif a haute densite et procede de fabrication d'un tel dispositif
EP4194591A1 (fr) * 2021-12-13 2023-06-14 Murata Manufacturing Co., Ltd. Procédé de fabrication d'un dispositif électrique doté d'une région d'oxyde anodique poreux délimitée par planarisation d'une pile de matériaux

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US20160268144A1 (en) * 2013-10-29 2016-09-15 Ipdia Structure with an improved capacitor
CN105761943B (zh) * 2016-04-14 2018-07-10 上海大学 镍锡合金纳米孔阵列及其制备方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4060697A1 (fr) * 2021-03-18 2022-09-21 Commissariat à l'énergie atomique et aux énergies alternatives Dispositif capacitif a haute densite et procede de fabrication d'un tel dispositif
FR3120982A1 (fr) * 2021-03-18 2022-09-23 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif capacitif a haute densite et procede de fabrication d’un tel dispositif
EP4194591A1 (fr) * 2021-12-13 2023-06-14 Murata Manufacturing Co., Ltd. Procédé de fabrication d'un dispositif électrique doté d'une région d'oxyde anodique poreux délimitée par planarisation d'une pile de matériaux

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