WO2020155560A1 - 阵列基板、显示屏及显示装置 - Google Patents

阵列基板、显示屏及显示装置 Download PDF

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Publication number
WO2020155560A1
WO2020155560A1 PCT/CN2019/095041 CN2019095041W WO2020155560A1 WO 2020155560 A1 WO2020155560 A1 WO 2020155560A1 CN 2019095041 W CN2019095041 W CN 2019095041W WO 2020155560 A1 WO2020155560 A1 WO 2020155560A1
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Prior art keywords
layer
light
electrode layer
electrode
emitting structure
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PCT/CN2019/095041
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English (en)
French (fr)
Inventor
刘明星
赵莹
韩冰
甘帅燕
高峰
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昆山国显光电有限公司
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Priority to KR1020217011468A priority Critical patent/KR20210052554A/ko
Priority to EP19913316.6A priority patent/EP3920253A4/en
Priority to JP2021521211A priority patent/JP2022505249A/ja
Publication of WO2020155560A1 publication Critical patent/WO2020155560A1/zh
Priority to US17/143,416 priority patent/US11417715B2/en

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    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2300/00—Aspects of the constitution of display devices
    • G09G2300/04—Structural and physical details of display devices
    • G09G2300/0439—Pixel structures
    • G09G2300/0452—Details of colour pixel setup, e.g. pixel composed of a red, a blue and two green components
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3031—Two-side emission, e.g. transparent OLEDs [TOLED]
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/17—Passive-matrix OLED displays
    • H—ELECTRICITY
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80523—Multilayers, e.g. opaque multilayers
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features

Definitions

  • This application relates to the display field, and in particular to an array substrate, a display screen and a display device.
  • Display terminals such as mobile phones and tablet computers need to integrate front cameras, earpieces, and infrared sensing elements. Therefore, you can set up front cameras, earpieces, and infrared sensing elements by slotting on the display terminal of the display terminal.
  • the slotted area of the display screen like Liu Haiping cannot be used to display the picture. Or, use a hole on the screen to set up the camera.
  • external light can enter the photosensitive element located below the screen through the opening on the screen, causing poor imaging effects. As such, the display screens of these display terminals are not full screens.
  • the present application provides an array substrate, a display screen and a display device.
  • the application provides an array substrate, a substrate, a first OLED substrate and a transparent second OLED substrate.
  • the first OLED substrate is a non-transparent OLED substrate.
  • the first OLED substrate at least partially surrounds the second OLED substrate, and the second OLED substrate includes: a first electrode layer, the first electrode layer is located on the substrate; a light emitting structure layer, the light emitting structure layer is located on the first On an electrode layer; and a second electrode layer, the second electrode layer is located on the light-emitting structure layer.
  • the first electrode layer includes a plurality of first electrodes
  • the light emitting structure layer includes a plurality of light emitting structures
  • the number of the first electrodes is less than the number of light emitting structures
  • each of the first electrodes corresponds to one light emitting structure. structure.
  • the number of first electrodes is smaller than the number of light-emitting structures, and each first electrode corresponds to a light-emitting structure, that is, the first electrode under part of the light-emitting structure is eliminated, thus reducing the pixel density of the transparent second OLED substrate, thereby Improve its light transmittance, so that the structure of the light-emitting structure layer can remain unchanged, that is, the mask openings in different areas of the mask are evenly distributed, and the stress at the junction of different areas is also uniform, ensuring that the transparent first On the premise that the second OLED substrate has sufficient light transmittance, there will be no wrinkles at the junctions of different areas of the mask, thereby avoiding the risk of color mixing at the junctions between the transparent second OLED substrate and other display areas.
  • the present application also provides a display screen, which includes the array substrate as described above and a packaging layer for packaging the array substrate.
  • the present application also provides a display device.
  • the display device includes a device body and the aforementioned display screen.
  • the device body has a device area; the display screen covers the device body; wherein the device area is located in the Below the second OLED substrate, and in the device area, a photosensitive device that collects light through the second OLED substrate is arranged.
  • FIG. 1 is a schematic cross-sectional view of an embodiment of a transparent OLED substrate of this application
  • FIG. 2 is a schematic diagram of an embodiment of the driving circuit of the first electrode of the transparent OLED substrate of the present application
  • FIG. 3 is a schematic top view of an embodiment of the first electrode layer of the transparent OLED substrate of this application;
  • FIG. 4 is a schematic top view of another embodiment of the first electrode layer of the transparent OLED substrate of this application.
  • FIG. 5 is a schematic top view of an embodiment of the light-emitting structure layer of the transparent OLED substrate of the present application.
  • FIG. 6 is a schematic top view of another embodiment of the light-emitting structure layer of the transparent OLED substrate of this application.
  • FIG. 7 is a schematic top view of an embodiment of the first electrode layer and the light-emitting structure layer of the transparent OLED substrate of this application;
  • FIG. 8 is a schematic top view of another embodiment of the first electrode layer and the light emitting structure layer of the transparent OLED substrate of this application;
  • FIG. 9 is a schematic cross-sectional view of an embodiment of the first OLED substrate of the array substrate of this application.
  • FIG. 10 is a schematic structural diagram of an embodiment of a display screen of this application.
  • FIG. 11 is a schematic structural diagram of an embodiment of a display device of this application.
  • the above-mentioned display terminal or electronic device cannot display images in the camera area. Moreover, the light transmittance of the above-mentioned display terminal is not high. In this case, in order to improve the light transmittance, the present application sets the display area of the substrate corresponding to the photosensitive device as a transparent display area with a lower pixel density. The pixel density of the normal display area outside the display area remains unchanged. Further, reducing the pixel density can be achieved by reducing the number of light-emitting structures in the transparent display area, while the number of light-emitting structures in the normal display area remains unchanged.
  • the openings of the first area of the mask corresponding to the normal display area are denser, and the mask corresponds to the transparent display area.
  • the openings in the second area of the mask are more scattered, which easily leads to uneven stress on the mask at the junction of the first area and the second area, which easily leads to the junction area of the first area and the second area of the mask Wrinkles are generated, thereby causing the risk of color mixing between the normal display area and the transparent display area of the substrate.
  • this embodiment provides an array substrate.
  • the array substrate includes: a substrate 1, a first OLED substrate 200 and a second OLED substrate 100.
  • the first OLED substrate 200 is a non-transparent OLED substrate and at least partially surrounds the second OLED substrate 100.
  • the second OLED substrate 100 includes a first electrode layer 2 on the substrate, a light emitting structure layer 3 on the first electrode layer 2 and a second electrode layer 4 on the light emitting structure layer 3.
  • the first electrode layer 2 includes a plurality of first electrodes
  • the light-emitting structure layer 3 includes a plurality of light-emitting structures
  • the number of the first electrodes is less than the number of the light-emitting structures
  • each of the first electrodes corresponds to One of the light-emitting structures.
  • the number of first electrodes is less than the number of light-emitting structures, and each first electrode corresponds to a light-emitting structure, that is, the first electrode under a part of the light-emitting structure is cancelled, thus eliminating the pixel circuit under the part of the light-emitting structure, and thus So that the part of the light-emitting structure does not emit light.
  • the pixel density of the transparent OLED substrate is reduced, that is, the pixel density of the second OLED substrate 100 is reduced, thereby increasing its light transmittance, so that the structure of the light-emitting structure layer can remain unchanged (relatively non-transparent other display areas are Say), that is, the mask openings in different areas of the mask remain unchanged and uniformly distributed, and the stress at the junction of different areas is also uniform. Therefore, under the premise of ensuring that the transparent OLED substrate has sufficient light transmittance, the interface between the transparent OLED substrate and other display areas (such as the first OLED substrate described above) will not cause color mixing due to the wrinkles of the mask. risk.
  • FIG. 1 is a schematic diagram of the structure of a transparent OLED substrate 100 (ie, a second OLED substrate) in an embodiment.
  • the transparent OLED substrate 100 includes a first electrode layer 2 on the substrate 1, a light-emitting structure layer 3 on the first electrode layer 2, and a second electrode layer 4 on the light-emitting structure layer 3.
  • the transparent OLED substrate 100 further includes a pixel definition layer 5.
  • the first electrode layer 2 is formed on the substrate 1.
  • the pixel defining layer 5 is formed on the first electrode layer 2.
  • the pixel defining layer 5 has a plurality of pixel openings 51 in which a light-emitting structure layer 3 on the first electrode layer 2 is formed, and a second electrode layer 4 is formed on the light-emitting structure layer 3.
  • the first electrode layer 2 may be an anode layer, and correspondingly, the second electrode layer 4 is a cathode layer. In other embodiments, the first electrode layer may also be a cathode layer, and the second electrode layer may correspond to an anode layer.
  • the substrate 1 may be a rigid substrate, such as a transparent substrate such as a glass substrate, a quartz substrate, or a plastic substrate.
  • the substrate 1 may be a flexible substrate, such as a flexible PI substrate or the like.
  • the material of each conductive trace (for example, the first electrode layer 2 and the second electrode layer 4) of the transparent OLED substrate may include a transparent material, the first electrode layer and The light transmittance of the second electrode layer is greater than 40%, further, the light transmittance of the two is greater than 60%, and further, the light transmittance of the two is not less than 80%.
  • the material of the first electrode layer 2 and the second electrode layer 4 may include a transparent conductive metal oxide or a magnesium-silver mixture.
  • the material of the first electrode layer 2 and the second electrode layer 4 may include ITO (indium tin oxide), indium zinc oxide (IZO), silver-doped indium tin oxide, silver-doped indium zinc oxide At least one.
  • the second electrode layer 4 is a surface electrode.
  • the second electrode layer 4 has a single-layer structure or a stacked-layer structure.
  • the second electrode layer 4 is a single-layer metal layer, or a single-layer metal mixture layer, or a single-layer transparent metal oxide layer.
  • the second electrode layer 4 is a laminated structure, the second electrode layer 4 is a laminated layer of a transparent metal oxide layer and a metal layer, or the second electrode layer is a transparent metal oxide layer and a metal mixture Layer stacking.
  • the thickness of the second electrode layer 4 is greater than or equal to 100 angstroms, and when the thickness of the second electrode layer 4 is less than or equal to 500 angstroms, the second electrode layer 4 is an overall continuous surface electrode, and the transparency of the second electrode layer 4 is greater than 40%; when the material of the second electrode layer 4 is doped with metal, the thickness of the second electrode layer 4 is greater than or equal to 100 Angstroms, less than or equal to 200 Angstroms, the second electrode layer 4 is a continuous surface electrode, and the transparency of the second electrode layer 4 is greater than 40%; the material of the second electrode layer 4 is doped with In the case of metal, when the thickness of the second electrode layer 4 is greater than or equal to 50 angstroms and less than or equal to 200 angstroms, the second electrode layer 4 is a continuous surface electrode, and the transparency of the second electrode layer 4 is greater than 50%; when the material of the second electrode layer 4 is doped with metal, the thickness of the second electrode layer
  • the first electrode layer 2 includes a plurality of first electrodes 20 (as shown in FIGS. 3 to 8).
  • the driving circuit of the first electrode 20 is a 2T1C driving circuit, including 2 TFTs (thin film transistors) and 1 capacitor,
  • the data line provides a data voltage signal for the first electrode.
  • the driving circuit is simpler, and the complexity of the driving circuit is reduced, which is beneficial to further improve the light transmittance of the transparent OLED substrate.
  • the driving circuit of the first electrode includes one TFT.
  • the transparent OLED substrate includes a scan line Scan and a data line Data
  • the data line Data is electrically connected to the source of the TFT
  • the first electrode (indicated by OLED in FIG. 2) is electrically connected
  • the drain of the TFT the scan line Scan is electrically connected to the gate of the TFT
  • the scan line Scan is used to control the turning on and off of the driving circuit
  • the data line Data is turned on in the driving circuit
  • a driving current signal is provided for the first electrode to control the light-emitting structure layer to emit light. Reduce the number of switching devices in the drive circuit to two or one.
  • the load current of the scan line and the load current of the data line are greatly reduced.
  • Reduce the requirements on the resistance of conductive circuit materials such as anodes, cathodes, scan lines, and data lines so that transparent materials can be used to make conductive circuits such as anodes, cathodes, scan lines, and data lines. This improves the performance of the display panel while ensuring the performance of the panel.
  • the data line Data is electrically connected to the drain of the TFT
  • the first electrode indicated by OLED in FIG. 2
  • the scan line Scan The gate of the TFT is electrically connected.
  • the first electrode 20a of the first electrode layer 2a is round or gourd-shaped, but the first electrode 20a can also have other shapes, such as square, oval, dumbbell, or wavy. .
  • the first electrode 20a shown in FIG. 3 is circular.
  • the square may include a right-angled square or a rounded square.
  • the first electrodes 20a in the same row or column correspond to light-emitting structures of the same color, and the first electrodes 20a in the same row or column receive the same data signal.
  • One data signal can drive the entire row or column of the first electrodes 20a, thereby simplifying the structure of the driving circuit.
  • the first electrodes 20a in the same row or the same column can be connected by connecting wires (not shown), and the connecting wires can be routed through other film layers or non-display areas.
  • the first electrode 20b of the first electrode layer 2b shown in FIG. 4 is in the shape of a gourd and extends in a first direction.
  • the first direction is the row or column direction of the transparent OLED substrate (the row direction is the scan line Scan direction, and the column direction is the data Line Data direction).
  • the first direction is the column direction of the array substrate.
  • the first electrode 20b is formed by sequentially connecting multiple first sub-electrodes 201b in the same column, and each first sub-electrode 201b corresponds to a light-emitting structure.
  • the first electrode 20b is connected to the same data line through a driving circuit, thereby reducing the number of driving circuits and simplifying the structure of the driving circuit.
  • the second electrode layer 4 is a surface electrode.
  • the light emitting structure layer 3a includes a plurality of light emitting structures 30a, and the light emitting structure 30a shown in FIG. 5 is circular.
  • the light emitting structure layer 3a includes light emitting structures of n colors, for example, n is equal to 3.
  • the light emitting structure layer 3a includes a red first light emitting structure 31a, a green second light emitting structure 32a, and a blue third light emitting structure 33a.
  • the light emitting structure 30b of FIG. 6 is square. In other embodiments, the light emitting structure has an oval shape or a dumbbell shape. In some embodiments, the light-emitting structures in the same row or the same column have the same color, as shown in FIGS. 5 and 6.
  • FIG. 7 is a schematic top view of an embodiment of the first electrode layer and the light-emitting structure layer of the transparent OLED substrate of this application.
  • the first electrode layer includes a plurality of first electrodes 20c, the first electrode 20c has a rounded square shape, the light-emitting structure layer includes a plurality of light-emitting structures, the light-emitting structure also has a rounded square shape, and the first electrode
  • the number of 20c is smaller than the number of light emitting structures 30c.
  • Each first electrode 20c corresponds to one light-emitting structure 30c. Due to the large number of light-emitting structures 30c, the first electrode 20c is not provided under part of the light-emitting structure. The light transmittance of the area corresponding to this part of the light-emitting structure is higher, and When the transparent OLED substrate works, this part of the light-emitting structure does not emit light.
  • the light-emitting structure layer includes a plurality of pixel units C arranged in an array, and each pixel unit C includes three-color light-emitting structures of green, red, and blue, including at least two of the same color Luminous structure.
  • the first electrode 20c is provided under some light emitting structures, and the first electrode 20c is not provided under other light emitting structures. In this way, the light transmittance of the transparent OLED substrate is improved without affecting the normal display effect of the transparent OLED substrate. As shown in FIG.
  • each pixel unit C includes a first light-emitting structure 31c, a second light-emitting structure 32c, a third light-emitting structure 33c, and a fourth light-emitting structure 34c, corresponding to green, green, red, blue (R, G , B only represents the color of the light-emitting structure, the letters in the figure are only marked on the overlapping area of the first electrode and the light-emitting structure) four colors, that is, each pixel unit C includes light-emitting structures of three colors.
  • the first electrode 20c is not provided under the green second light-emitting structure 32c, that is, one of the two green light-emitting structures in a pixel unit C emits light, and the other green light-emitting structure does not emit light, which does not affect transparency. Under the premise of the normal display effect of the OLED substrate, the light transmittance of the transparent OLED substrate is improved. In other embodiments, it is also possible to choose not to provide the first electrode 20c under the light-emitting structure of other colors. For example, the first electrode 20c is not provided under the blue second light-emitting structure, or the first electrode 20c is not provided under the red second light-emitting structure.
  • the first light-emitting structures 31c and the second light-emitting structures 32c that actually do not emit light are arranged alternately, so as to ensure that the transparent OLED substrate displays uniformly in the first direction.
  • the first light-emitting structure 31c in the same column and the second light-emitting structure 32c that actually do not emit light are arranged at intervals.
  • the second light-emitting structures 32c that actually do not emit light among the plurality of pixel units C are also arranged in an array, thereby helping to improve the overall display of the transparent OLED substrate. Uniformity.
  • the light-emitting structure layer includes a plurality of first pixel units D and second pixel units E arranged in an array, and each first pixel unit D includes n-color light-emitting structures.
  • n is equal to 3, which are red, green, and blue respectively.
  • Each first pixel unit D includes a red light-emitting structure 31d, a green light-emitting structure 32d, and a blue light-emitting structure 33d.
  • Each of the red light-emitting structure 31d, the green light-emitting structure 32d and the blue light-emitting structure 33d corresponds to one.
  • Each second pixel unit E includes light-emitting structures of n colors.
  • n is equal to 3.
  • the light-emitting structures of n colors are, for example, red, green, and blue light-emitting structures; each second pixel unit It includes a red light-emitting structure 31e, a green light-emitting structure 32e, and a blue light-emitting structure 33e.
  • the first electrode 20d is not provided under the red light-emitting structure 31e, the green light-emitting structure 32e, and the blue light-emitting structure 33e. That is, after the transparent OLED substrate is energized, the first pixel unit D emits light, and the second pixel unit E does not emit light. Under the premise of not affecting the display effect of the transparent OLED substrate, the light transmittance of the transparent OLED substrate is improved.
  • the first pixel units D and the second pixel units E that do not actually emit light are arranged alternately, so as to ensure that the transparent OLED substrate displays uniformly in the first direction.
  • the second pixel units E are arranged in an array, thereby helping to improve the overall display uniformity of the transparent OLED substrate.
  • the array substrate provided by the present application includes a first OLED substrate 200 (as shown in FIG. 9) and a second OLED substrate 100 (as shown in FIG. 1).
  • the first OLED substrate 200 at least partially surrounds the second OLED substrate 100 (FIG. 11 as described below), the shape of the area on the array substrate corresponding to the first OLED substrate 200 may be rectangular or circular, and the shape of the area on the array substrate corresponding to the second OLED substrate 100 may be circular, rectangular, Water drop shape, bangs shape, etc.
  • the second OLED substrate is the transparent OLED substrate 100 described in any of the foregoing embodiments.
  • the first OLED substrate 200 includes a third electrode layer 7 formed on the substrate 1, a light-emitting material layer 8 formed on the third electrode layer 7, and a fourth electrode formed on the light-emitting material layer 8.
  • the third electrode layer 7 includes a plurality of third electrodes
  • the luminescent material layer 8 includes a plurality of luminescent materials
  • the third electrodes correspond to the luminescent materials one to one.
  • the light-emitting material layer 8 of the first OLED substrate and the light-emitting structure layer 3 of the second OLED substrate are formed in the same process using the same mask.
  • the size and spacing of the adjacent light-emitting structure of the light-emitting structure layer 3 and the adjacent light-emitting material of the light-emitting material layer 8 can be set to be equal, the mask area corresponding to the first OLED substrate and the mask corresponding to the second OLED substrate
  • the same mask opening can be used in the plate area. Since the opening size and the opening pitch are equal, the stress on the critical areas of the two areas of the mask is even, avoiding the critical areas of the first OLED substrate and the second OLED substrate.
  • the absence of the first electrode under part of the light-emitting structure included in the light-emitting structure layer 3 of the second OLED substrate also ensures that the second OLED substrate has a sufficiently large light transmittance under the premise of normal display.
  • the present application also provides a display screen, as shown in FIG. 11, which includes the aforementioned array substrate and a packaging layer 201 for packaging the array substrate.
  • the area corresponding to the first OLED substrate 200 is a non-transparent display area
  • the area corresponding to the second OLED substrate 100 is a transparent display area.
  • the transparent display area corresponds to a PMOLED screen
  • the non-transparent display area is an AMOLED screen.
  • Photosensitive devices such as cameras and sensors can be arranged below the PMOLED screen. The photosensitive devices can collect external light through the transparent PMOLED screen.
  • the display screen can ensure the performance of the photosensitive devices while achieving the display function.
  • the present application also provides a display device, the display device includes a device main body 300 and the display screen covering the device main body.
  • the display device may be a device such as a mobile phone, a tablet computer, a notebook computer, etc., taking a mobile phone as an example.
  • the device body may include components such as a casing, a circuit board, a battery, and a processor.
  • the device body 300 also has a device area. The area is located under the second OLED substrate 100, and the device area is provided with a photosensitive device 400 that collects light through the two OLED substrates 100.
  • the photosensitive device 400 may be a camera, an infrared sensor or other optical sensors. Due to the high light transmittance of the second OLED substrate 100, sufficient light can be collected by the photosensitive device.

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Abstract

本申请提供一种阵列基板、显示屏及显示装置。阵列基板包括：衬底、非透明的第一OLED基板和透明的第二OLED基板。第一OLED基板至少部分包围第二OLED基板。第二OLED基板包括：位于所述衬底上的第一电极层；位于所述第一电极层上的发光结构层；以及位于所述发光结构层上的第二电极层。所述第一电极层包括多个第一电极，所述发光结构层包括多个发光结构，所述第一电极的数量小于发光结构的数量，且每个所述第一电极对应一个所述发光结构。

Description

阵列基板、显示屏及显示装置 技术领域
本申请涉及显示领域，尤其涉及一种阵列基板、显示屏及显示装置。
背景技术
随着显示终端的快速发展，用户对屏占比的要求越来越高，使得显示终端的全面屏显示受到业界越来越多的关注。显示终端如手机、平板电脑等，由于需要集成诸如前置摄像头、听筒以及红外感应元件等，因此可通过在显示终端的显示屏上开槽，来设置前置摄像头、听筒以及红外感应元件等。但是如刘海屏的显示屏的开槽区域并不能用来显示画面。或者，采用在屏幕上开孔的方式来设置摄像头等。然而，对于实现摄像功能的电子设备来说，外界光线可通过屏幕上的开孔处进入位于屏幕下方的感光元件，引起不良的成像效果。如此，这些显示终端的显示屏并非全面屏。
发明内容
基于此，本申请提供一种阵列基板、显示屏及显示装置。
本申请提供一种阵列基板，衬底、第一OLED基板和透明的第二OLED基板。所述第一OLED基板为非透明OLED基板。第一OLED基板至少部分包围第二OLED基板，且第二OLED基板包含：第一电极层，所述第一电极层位于所述衬底上；发光结构层，所述发光结构层位于所述第一电极层上；以及第二电极层，所述第二电极层位于所述发光结构层上。所述第一电极层包括多个第一电极，所述发光结构层包括多个发光结构，所述第一电极的数量小于发光结构的数量，且每个所述第一电极对应一个所述发光结构。
第一电极的数量小于发光结构的数量，且每个第一电极对应一个发光结构，也就是说，取消部分发光结构下方的第一电极，如此降低了透明的第二OLED基板的像素密度，从而提高其光透过率，使得发光结构层的结构可保持不变，即掩膜版的不同区域的掩膜开口分布均匀，不同区域的交界处所受应力也是均匀的，在保证了透明的第二OLED基板具有足够的光透过率的前提下，掩膜版的不同区域的交界处不会产生褶皱，因而避免了透明的第二OLED基板和其他显示区域的交界处的混色风险。
本申请还提供一种显示屏，包括如前所述的阵列基板以及用于封装所述阵列基板的 封装层。
本申请还提供一种显示装置，所述显示装置包括设备本体及前述显示屏，所述设备本体具有器件区；所述显示屏覆盖在所述设备本体上；其中，所述器件区位于所述第二OLED基板下方，且所述器件区中设置有透过所述第二OLED基板进行光线采集的感光器件。
附图说明
图1为本申请透明OLED基板的一个实施例的剖视示意图；
图2为本申请透明OLED基板的第一电极的驱动电路的一个实施例的示意图；
图3为本申请透明OLED基板的第一电极层的一个实施例的俯视示意图；
图4为本申请透明OLED基板的第一电极层的又一个实施例的俯视示意图；
图5为本申请透明OLED基板的发光结构层的一个实施例的俯视示意图；
图6为本申请透明OLED基板的发光结构层的又一个实施例的俯视示意图；
图7为本申请透明OLED基板的第一电极层和发光结构层的一个实施例的俯视示意图；
图8为本申请透明OLED基板的第一电极层和发光结构层的又一个实施例的俯视示意图；
图9为本申请阵列基板的第一OLED基板的一个实施例的剖视示意图；
图10为本申请显示屏的一个实施例的结构示意图；以及
图11为本申请显示装置的一个实施例的结构示意图。
具体实施方式
这里将详细地对示例性实施例进行说明，其示例表示在附图中。下面的描述涉及附图时，除非另有表示，不同附图中的相同数字表示相同或相似的要素。以下示例性实施例中所描述的实施方式并不代表与本申请相一致的所有实施方式。相反，它们仅是与如所附权利要求书中所详述的、本申请的一些方面相一致的装置的例子。
上述的显示终端或电子设备，在摄像头区域不能显示画面。而且，上述的显示终端 的透光率不高，在此情况下，为了提高透光率，本申请将基板的对应于感光器件的显示区域设置为像素密度较低的透明显示区，而除了透明显示区之外的正常显示区的像素密度保持不变。进一步的，降低像素密度可通过减少透明显示区的发光结构的数量来实现，正常显示区的发光结构的数量则保持不变。但是相比之下，若采用同一精密掩膜版制作正常显示区和透明显示区的发光结构，掩膜版对应于正常显示区的第一区域的开口较为密集，掩膜版对应于透明显示区的第二区域的开口则较为分散，这样容易导致掩膜版在第一区域和第二区域的交界处所受应力不均匀，进而容易导致掩膜版的第一区域和第二区域的交界区域产生褶皱，因而造成基板的正常显示区和透明显示区的混色风险。
为解决上述技术问题，参照图1、图9和图11所示，本实施例提供一种阵列基板，所述阵列基板包括：衬底1、第一OLED基板200以及第二OLED基板100。第一OLED基板200为非透明OLED基板，且至少部分包围所述第二OLED基板100。第二OLED基板100包含位于所述衬底上的第一电极层2、位于所述第一电极层2上的发光结构层3及位于所述发光结构层3上的第二电极层4。其中，所述第一电极层2包括多个第一电极，所述发光结构层3包括多个发光结构，所述第一电极的数量小于发光结构的数量，且每个所述第一电极对应一个所述发光结构。
第一电极的数量小于发光结构的数量，且每个第一电极对应一个发光结构，也就是说，取消部分发光结构下方的第一电极，因而取消了所述部分发光结构下方的像素电路，进而使得所述部分发光结构不发光。如此，降低了透明OLED基板的像素密度，即降低了第二OLED基板100的像素密度，从而提高其光透过率，使得发光结构层的结构可保持不变(相对非透明的其他显示区域来说)，即掩膜版的不同区域的掩膜开口保持不变且分布均匀，不同区域的交界处所受应力也是均匀的。因此，在保证了透明OLED基板具有足够的光透过率的前提下，透明OLED基板和其他显示区域(如上文所述第一OLED基板)的交界处不会因掩膜版产生褶皱而存在混色风险。
图1为一个实施例中的透明OLED基板100(即，第二OLED基板)的结构示意图。请参照图1，所述透明OLED基板100包括位于衬底1上的第一电极层2、位于第一电极层2上的发光结构层3和位于发光结构层3上的第二电极层4。透明OLED基板100还包括像素定义层5。其中，第一电极层2形成于衬底1上。像素定义层5形成在第一电极层2上。像素定义层5上具有多个像素开口51，该像素开口51内形成有位于第一电极层2上的发光结构层3，发光结构层3上形成第二电极层4。所述第一电极层2可以为阳极层，对应的，第二电极层4为阴极层。在其他实施例中，所述第一电极层还可 以为阴极层，第二电极层则对应为阳极层。
在一个实施例中，衬底1可以为刚性基板，例如玻璃基板、石英基板或者塑料基板等透明基板。在另一个实施例中，衬底1可以为柔性基板，例如柔性PI基板等。
在一个实施例中，为了提高透明OLED基板光透过率，透明OLED基板的各导电走线(例如第一电极层2和第二电极层4)的材料可以包括透明材料，第一电极层及第二电极层的透光率大于40％，进一步的，二者的透光率大于60％，更进一步的，二者的透光率不小于80％。如第一电极层2和第二电极层4的材料可以包括透明导电金属氧化物或镁银混合物。举例来说，第一电极层2和第二电极层4的材料可以包括ITO(氧化铟锡)、氧化铟锌(IZO)、掺杂银的氧化铟锡、掺杂银的氧化铟锌中的至少一种。
在一个实施例中，所述第二电极层4为面电极。可选的，所述第二电极层4为单层结构或叠层结构。当所述第二电极层4为单层结构时，所述第二电极层4为单层金属层、或单层金属混合物层、或单层透明金属氧化物层。当所述第二电极层4为叠层结构时，所述第二电极层4为透明金属氧化物层与金属层的叠层、或所述第二电极层为透明金属氧化物层与金属混合物层的叠层。
在一个实施例中，所述第二电极层4的材料中掺杂有金属时，所述第二电极层4的厚度大于或等于100埃，小于或等于500埃时，所述第二电极层4为整体连续的面电极，且所述第二电极层4的透明度大于40％；所述第二电极层4材料中掺杂有金属时，所述第二电极层4的厚度大于或等于100埃，小于或等于200埃时，所述第二电极层4为整体连续的面电极，且所述第二电极层4的透明度大于40％；所述第二电极层4的材料中掺杂有金属时，所述第二电极层4的厚度大于或等于50埃，小于或等于200埃时，所述第二电极层4为整体连续的面电极，且所述第二电极层4的透明度大于50％；所述第二电极层4材料中掺杂有金属时，所述第二电极层4的厚度大于或等于50埃，小于或等于200埃时，所述第二电极层4为整体连续的面电极，且所述第二电极层4的透明度大于60％；当所述第二电极层4为单层结构时，所述单层金属层材料为Al、Ag，所述单层金属混合物层材料为MgAg或掺杂Al的金属混合材料，所述透明金属氧化物为ITO或IZO。
所述第一电极层2包括多个第一电极20(如图3至图8所示)，第一电极20的驱动电路为2T1C驱动电路，包括2个TFT(薄膜晶体管)及1个电容，数据线为第一电极提供数据电压信号。相比于OLED基板的7T1C(7个TFT及1个电容)驱动电路更加简单，降低驱动电路的复杂度，有利于进一步提升透明OLED基板的光透过率。
在另一个实施例中，所述第一电极的驱动电路包含1个TFT。请结合图2，所述透明OLED基板包括扫描线Scan和数据线Data，所述数据线Data电性连接所述TFT的源极，所述第一电极(图2中以OLED表示)电性连接所述TFT的漏极，所述扫描线Scan电性连接所述TFT的栅极，所述扫描线Scan用于控制所述驱动电路的开启和关闭，所述数据线Data在所述驱动电路开启时，为所述第一电极提供驱动电流信号，以控制所述发光结构层发光。将驱动电路中的开关器件减少至两个或一个，在简化面板结构复杂度，降低因面板结构间隙导致的衍射的程度的基础上，大大降低扫描线的负载电流以及数据线的负载电流，以降低对阳极、阴极、扫描线、数据线等导电线路材料的电阻的要求，使得可以采用透明材料制作阳极、阴极、扫描线、数据线等导电线路，在确保面板性能的同时，提高显示面板的透光度。在另一个实施例中，所述数据线Data电性连接所述TFT的漏极，所述第一电极(图2中以OLED表示)电性连接所述TFT的源极，所述扫描线Scan电性连接所述TFT的栅极。
请结合图3及图4，第一电极层2a的第一电极20a呈圆形或葫芦形，但是，第一电极20a还可以是其他形状，例如，方形、椭圆形、哑铃形、或波浪形。图3示意的第一电极20a呈圆形。在一些实施例中，方形可以包括直角方形或圆角方形。在一个实施例中，同一行或同一列的第一电极20a对应于同种颜色的发光结构，且同一行或同一列的第一电极20a接收同一数据信号。一个数据信号即可驱动整行或整列的第一电极20a，从而简化驱动电路的结构。其中，同一行或同一列的各个第一电极20a之间可通过连接线(未图示)相连，连接线可通过其他膜层或非显示区进行走线。
图4示意的第一电极层2b的第一电极20b呈葫芦形且沿第一方向延伸，第一方向为透明OLED基板的行方向或列方向(行方向为扫描线Scan方向，列方向为数据线Data方向)。在图4中，第一方向为阵列基板的列方向。本实施例中的第一电极20b为同一列的多个第一子电极201b依次相连形成，每个第一子电极201b对应一个发光结构。第一电极20b通过一个驱动电路连接至同一数据线，从而减少驱动电路的数量，简化驱动电路的结构。本实施例中，第二电极层4为面电极。
参考图5，所述发光结构层3a包括多个发光结构30a，图5所示的发光结构30a呈圆形。所述发光结构层3a包括n种颜色的发光结构，譬如n等于3，发光结构层3a包括红色的第一发光结构31a、绿色的第二发光结构32a及蓝色的第三发光结构33a。图6的发光结构30b则呈方形。在其他实施例中，所述发光结构呈椭圆形或哑铃形等形状。在一些实施例中，同一行或同一列的发光结构颜色相同，如图5及图6所示。
图7为本申请透明OLED基板的第一电极层及发光结构层的一个实施例的俯视示意图。所述第一电极层包括多个第一电极20c，所述第一电极20c呈圆角方形，所述发光结构层包括多个发光结构，发光结构也呈圆角方形，且所述第一电极20c的数量小于发光结构30c的数量。每一第一电极20c对应一个所述发光结构30c，由于发光结构30c的数量较大，因而部分发光结构下方未设置第一电极20c，这部分发光结构对应的区域光透过率更高，而在透明OLED基板工作时，这部分发光结构不发光。
请继续参照图7，所述发光结构层包括呈阵列排布的多个像素单元C，每个像素单元C包括绿色、红色、蓝色三种颜色的发光结构，其中包括至少两个颜色相同的发光结构。至少两个相同颜色的发光结构中，部分发光结构下设置第一电极20c，其他部分发光结构下不设置第一电极20c。如此在不影响透明OLED基板的正常显示效果的前提下，提高了透明OLED基板的光透过率。如图7所示，每个像素单元C包括第一发光结构31c、第二发光结构32c、第三发光结构33c及第四发光结构34c，依次对应绿色、绿色、红色、蓝色(R、G、B仅表示发光结构的颜色，图中的字母仅是标注于第一电极和发光结构的重合区域)四种颜色，即每个像素单元C包括三种颜色的发光结构。其中呈绿色的第二发光结构32c下方未设置第一电极20c，也就是说，一个像素单元C中的两个绿色发光结构中一个发光结构发光，另一个绿色发光结构不发光，在不影响透明OLED基板的正常显示效果的前提下，提高了透明OLED基板的光透过率。在其他实施例中，也可选择在其他颜色的发光结构下方不设置第一电极20c。例如，呈蓝色的第二发光结构下方不设置第一电极20c，或呈红色的第二发光结构下方不设置第一电极20c。
在图7中，作为第一方向的列方向上，所述第一发光结构31c与实际不发光的第二发光结构32c交错排列，从而保证透明OLED基板在第一方向上显示均匀。例如，位于同一列的第一发光结构31c与实际不发光的第二发光结构32c间隔设置。在整个发光结构层上，由于像素单元呈阵列排布，对应的，多个像素单元C中的实际不发光的第二发光结构32c也呈阵列排布，从而有利于提高透明OLED基板整体的显示均匀性。
请参照图8，在另一个实施例中，发光结构层包括呈阵列排布的多个第一像素单元D及第二像素单元E，每个第一像素单元D包括n种颜色的发光结构，本实施例中n等于3，分别为红色、绿色、蓝色。每个第一像素单元D包括红色的发光结构31d、绿色的发光结构32d及蓝色的发光结构33d，每个红色的发光结构31d、绿色的发光结构32d及蓝色的发光结构33d分别对应一个第一电极20d。每个第二像素单元E包括n种颜色的发光结构，本实施例中n等于3，n种颜色的发光结构例如为红色、绿色、蓝色三种 颜色的发光结构；每个第二像素单元包括红色的发光结构31e、绿色的发光结构32e及蓝色的发光结构33e，所述红色的发光结构31e、绿色的发光结构32e及蓝色的发光结构33e下方均未设置第一电极20d。也就是说，透明OLED基板通电后，第一像素单元D发光，第二像素单元E不发光，在不影响透明OLED基板的显示效果的前提下，提高了透明OLED基板的光透过率。
在图8中，作为第一方向的列方向上，所述第一像素单元D与实际不发光的第二像素单元E交错排列，从而保证透明OLED基板在第一方向上显示均匀。在整个发光结构层上，第二像素单元E呈阵列排布，从而有利于提高透明OLED基板整体的显示均匀性。
本申请提供的阵列基板，其包括第一OLED基板200(如图9所示)及第二OLED基板100(如图1所示)，所述第一OLED基板200至少部分包围第二OLED基板100(如下文所描述的图11)，阵列基板上对应于第一OLED基板200的区域形状可以为矩形或圆形，阵列基板上对应于第二OLED基板100的区域形状可以为圆形、矩形、水滴形、刘海形等，所述第二OLED基板为前述任一实施例中记载的透明OLED基板100。
请结合图9，所述第一OLED基板200包括形成于衬底1上的第三电极层7、形成于第三电极层7的发光材料层8及形成于发光材料层8上的第四电极层9，所述第三电极层7包括多个第三电极，所述发光材料层8包括多个发光材料，所述第三电极与所述发光材料一一对应。在一个实施例中，第一OLED基板的发光材料层8和第二OLED基板的发光结构层3采用同一掩膜版在同一工艺中形成。发光结构层3的相邻的发光结构和发光材料层8的相邻的发光材料的尺寸及间距均可设置为相等，第一OLED基板对应的掩膜版区域和第二OLED基板对应的掩膜版区域可以采用相同的掩膜开口，由于开口尺寸及开口间距均相等，使得掩膜版两个区域的临界区所受的应力均匀，避免了第一OLED基板和第二OLED基板的临界区域产生褶皱，同时，第二OLED基板的发光结构层3包含的部分发光结构下方未设置第一电极也保证了第二OLED基板在能够正常显示的前提下具有足够大的光透过率。
本申请还提供一种显示屏，如图11所示，其包括如前所述的阵列基板及对阵列基板进行封装的封装层201。所述第一OLED基板200对应的区域为非透明显示区域，第二OLED基板100对应的区域为透明显示区域，可选的，透明显示区域对应为PMOLED屏，非透明显示区域为AMOLED屏。所述PMOLED屏下方可设置摄像头、传感器等感光器件，感光器件可通过透明PMOLED屏采集外界光线，所述显示屏在实现显示功能的同时，保证了感光器件的性能。
请结合图11，本申请还提供一种显示装置，所述显示装置包括设备主体300及覆盖于所述设备主体的所述显示屏。所述显示装置可以是手机、平板电脑、笔记本电脑等设备，以手机为例，设备主体可包括外壳、电路板、电池、处理器等元件，所述设备主体300还具有器件区，所述器件区位于所述第二OLED基板100下方，且所述器件区中设置有透过所述二OLED基板100进行光线采集的感光器件400，感光器件400可以是摄像头、红外传感器或其他光学传感器。由于第二OLED基板100的高透光性，可保证感光器件采集到足够的光线。
以上所述仅为本申请的较佳实施例而已，并不用以限制本申请，凡在本申请的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本申请保护的范围之内。

Claims (18)

  1. 一种阵列基板，包括：
    衬底；
    非透明的第一OLED基板；以及
    透明的第二OLED基板，所述第一OLED基板至少部分包围所述第二OLED基板，第二OLED基板包含：
    第一电极层，所述第一电极层位于所述衬底上；
    发光结构层，所述发光结构层位于所述第一电极层上；以及
    第二电极层，所述第二电极层位于所述发光结构层上；
    其中，所述第一电极层包括多个第一电极，所述发光结构层包括多个发光结构，所述第一电极的数量小于发光结构的数量，且每个所述第一电极对应一个所述发光结构。
  2. 如权利要求1所述的阵列基板，其中，所述发光结构层包括同种颜色的第一发光结构及第二发光结构，所述第一发光结构与第一电极一一对应，所述第二发光结构下方未设置第一电极。
  3. 如权利要求2所述的阵列基板，其中，所述发光结构层包括多个像素单元，每个所述像素单元包括所述第一发光结构及所述第二发光结构；
    所述第一发光结构及第二发光结构在第一方向上交错排列，所述第一方向为阵列基板的行方向或列方向。
  4. 如权利要求1所述的阵列基板，其中，所述发光结构层包括多个第一像素单元及多个第二像素单元，每个第一像素单元及每个第二像素单元均包括n种颜色的发光结构，所述第一像素单元的每个发光结构均与一个第一电极对应，所述第二像素单元的每个发光结构下方未设置第一电极。
  5. 如权利要求4所述的阵列基板，其中，
    所述第一像素单元和第二像素单元在第一方向上交错排列，所述第一方向为阵列基板的行方向或列方向。
  6. 如权利要求2所述的阵列基板，其其中，所述第二发光结构呈阵列排布。
  7. 如权利要求4所述的阵列基板，其中，所述第二像素单元呈阵列排布。
  8. 如权利要求1所述的阵列基板，其中，
    所述第一电极的驱动电路为包含两个薄膜晶体管和一个存储电容的驱动电路；或者，
    所述第一电极的驱动电路包括1个薄膜晶体管，所述第二OLED基板包括数据线，所述数据线电性连接所述薄膜晶体管的源极或漏极，所述第一电极电性连接所述薄膜晶 体管的漏极或源极，所述数据线在所述驱动电路开启时，为所述第一电极提供驱动电流，以控制所述发光结构层发光。
  9. 如权利要求1所述的阵列基板，其中，位于同一行或位于同一列的所述第一电极对应的发光结构为同一种颜色，位于同一行或位于同一列的所述第一电极接收同一数据信号。
  10. 如权利要求1所述的阵列基板，其中，
    所述第一电极呈圆形、方形、椭圆形、哑铃形、葫芦形或波浪形，
    所述发光结构呈方形、圆形、椭圆形或哑铃形。
  11. 如权利要求1所述的阵列基板，其中，
    所述第一OLED基板包括第三电极层、形成于第三电极层的发光材料层及形成于发光材料层上的第四电极层，所述第三电极层包括多个第三电极，所述发光材料层包括多个发光材料，所述第三电极与所述发光材料一一对应。
  12. 如权利要求11所述的阵列基板，其中，
    第一OLED基板的发光材料层和第二OLED基板的发光结构层采用同一掩膜版在同一工艺中形成。
  13. 如权利要求11所述的阵列基板，其中，第一OLED基板对应的掩膜版区域和第二OLED基板对应的掩膜版区域采用相同的掩膜开口。
  14. 如权利要求12所述的阵列基板，其中
    所述发光结构层的相邻的发光结构和所述发光材料层的相邻的发光材料的尺寸及间距相等。
  15. 如权利要求1所述的阵列基板，其中，所述第一电极层及第二电极层的透光率大于40％，并且第一电极层和第二电极层的材料包括透明导电金属氧化物或镁银混合物。
  16. 如权利要求1所述的阵列基板，其中，所述第二电极层为面电极；
    所述第二电极层为单层结构或叠层结构，且所述第二电极层为单层结构时，所述第二电极层为单层金属层、或单层金属混合物层、或单层透明金属氧化物层，所述第二电极层为叠层结构时，所述第二电极层为透明金属氧化物层与金属层的叠层、或所述第二电极层为透明金属氧化物层与金属混合物层的叠层；
    所述第二电极层材料中掺杂有金属，且所述第二电极层的厚度大于或等于100埃，小于或等于500埃时，所述第二电极层为整体连续的面电极，且所述第二电极层的透明度大于40％；
    所述第二电极层材料中掺杂有金属，且所述第二电极层的厚度大于或等于100埃， 小于或等于200埃时，所述第二电极层为整体连续的面电极，且所述第二电极层的透明度大于40％；
    所述第二电极层材料中掺杂有金属，且所述第二电极层的厚度大于或等于50埃，小于或等于200埃时，所述第二电极层为整体连续的面电极，且所述第二电极层的透明度大于50％；
    所述第二电极层材料中掺杂有金属，且所述第二电极层的厚度大于或等于50埃，小于或等于200埃时，所述第二电极层为整体连续的面电极，且所述第二电极层的透明度大于60％；
    所述第二电极层为单层结构时，所述单层金属层材料为Al、Ag，所述单层金属混合物层材料为Mg、Ag或掺杂Al的金属混合材料，所述透明金属氧化物为氧化铟锡或氧化铟锌。
  17. 一种显示屏，包括：
    如权利要求1所述的阵列基板；以及
    封装层，用于封装所述阵列基板。
  18. 一种显示装置，包括：
    设备本体，具有器件区；
    如权利要求17所述的显示屏，覆盖在所述设备本体上；
    其中，所述器件区位于所述第二OLED基板下方，且所述器件区中设置有透过所述第二OLED基板进行光线采集的感光器件。
PCT/CN2019/095041 2019-01-31 2019-07-08 阵列基板、显示屏及显示装置 WO2020155560A1 (zh)

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