WO2020149571A1 - Procédé de transfert d'éléments électroluminescents à semi-conducteurs - Google Patents

Procédé de transfert d'éléments électroluminescents à semi-conducteurs Download PDF

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Publication number
WO2020149571A1
WO2020149571A1 PCT/KR2020/000358 KR2020000358W WO2020149571A1 WO 2020149571 A1 WO2020149571 A1 WO 2020149571A1 KR 2020000358 W KR2020000358 W KR 2020000358W WO 2020149571 A1 WO2020149571 A1 WO 2020149571A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
emitting device
temporary fixed
substrate
Prior art date
Application number
PCT/KR2020/000358
Other languages
English (en)
Korean (ko)
Inventor
김경민
정겨울
Original Assignee
주식회사 세미콘라이트
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020190005202A external-priority patent/KR20200088933A/ko
Priority claimed from KR1020190005201A external-priority patent/KR102121407B1/ko
Application filed by 주식회사 세미콘라이트 filed Critical 주식회사 세미콘라이트
Publication of WO2020149571A1 publication Critical patent/WO2020149571A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

Definitions

  • the present disclosure (Disclosure) relates to a method of transferring a semiconductor light emitting device as a whole, and particularly to a method of transferring a plurality of semiconductor light emitting devices to a substrate at a time.
  • the present disclosure (Disclosure) relates to a transfer device of a semiconductor light emitting device as a whole, and more particularly to a device for transferring a plurality of semiconductor light emitting devices to a substrate at a time.
  • the semiconductor light emitting device means a semiconductor optical device that generates light through recombination of electrons and holes, and examples include a group 3 nitride semiconductor light emitting device (LED, LD).
  • the group 3 nitride semiconductor is composed of a compound of Al(x)Ga(y)In(1-x-y)N (0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1, 0 ⁇ x+y ⁇ 1).
  • a GaAs-based semiconductor light-emitting device used for red light emission is exemplified.
  • LCD Liguid Crystal Display
  • AMOLED Active Matrix Organic Light Emitting Diodes
  • FIG. 1 and 2 are views showing an example of a method of transferring a semiconductor light emitting device described in Korean Patent Publication No. 2018-0079863. For convenience of explanation, some drawing symbols have been changed.
  • the active matrix substrate 10 on which the control circuit is formed is prepared (S1). Thereafter, a plurality of solder bumps 11 and 12 are first transferred and printed on the upper surface of the active matrix substrate 10 (S2). Thereafter, a plurality of semiconductor light emitting devices 20 are subjected to secondary transfer printing on the top surface of the active matrix substrate 10 (S3).
  • the semiconductor light emitting elements 20 arranged in a matrix arrangement on the semiconductor light emitting element support 21 using the roll-to-roll transfer printing technique are original. It includes moving and attaching on the active matrix substrate 10 as it is in a matrix arrangement.
  • an adhesive carrier 30, a pick-up roller 31, and a positioning roller 32 are used.
  • bonding by heating and compression of the solder bumps 11 and 12 may be performed.
  • the solder bumps 11 and 12 may be heated and compressed. Bonding may also occur.
  • the transfer head When using the transfer head to transfer individually, there is an advantage of high accuracy of transfer, but there is a disadvantage that the transfer time is long.
  • the transfer time When transporting at one time by using the adhesive carrier 30, the transfer time is shortened, but the arrangement of the semiconductor light emitting elements in the process of separating the adhesive carrier 30 before bonding by heating and compression of the solder bumps 11 and 12 is performed. It can be distracting.
  • the adhesive carrier 30 and the substrate 10 The arrangement of semiconductor light emitting devices may be disturbed due to a difference in thermal expansion coefficient of.
  • the semiconductor light emitting devices In order to prevent the arrangement of the semiconductor light emitting devices from being disturbed due to a difference in thermal expansion coefficient in the bonding process by the solder bumps 11 and 12 without separating the adhesive carrier 30, it is necessary to compress the semiconductor light emitting device with a constant force.
  • the semiconductor light emitting device may be damaged by compression.
  • the present disclosure is to provide a method of transferring a semiconductor light emitting device that solves the problem of a method of transferring a semiconductor light emitting device using an adhesive carrier.
  • the present disclosure is to provide a semiconductor light emitting device transfer device that solves the problem of a method of transporting a semiconductor light emitting device using an adhesive carrier.
  • a plurality of solder bumps are arranged and a substrate including a temporary fixed layer covering a plurality of solder bumps and a plurality of Preparing an adhesive carrier in which the semiconductor light emitting elements are arranged; Aligning a plurality of semiconductor light emitting elements of the adhesive carrier to correspond to a plurality of solder bumps on the substrate; Moving one of the substrate and the adhesive carrier so that the temporary fixed layer contacts the plurality of semiconductor light emitting elements; Lowering the temperature of the temporary fixed bed; And bonding a plurality of semiconductor semiconductor light-emitting device by melting the solder bumps (bonding) to the substrate; is provided a method of transferring a semiconductor light-emitting device comprising a.
  • a semiconductor light emitting device transport device a plurality of solder bumps are arranged and a substrate including a temporary fixing layer covering a plurality of solder bumps is fixed.
  • a cooling unit for lowering the temperature of the temporary fixed layer of the substrate; is provided with a semiconductor light emitting device transfer device comprising a.
  • FIG. 1 and 2 are views showing an example of a method of transferring a semiconductor light emitting device described in Korean Patent Publication No. 2018-0079863,
  • FIG. 3 is a flowchart illustrating an example of a method of transferring a semiconductor light emitting device according to the present disclosure
  • FIG. 4 is a view showing an example of a substrate according to the present disclosure
  • FIG. 5 is a view showing an example of an adhesive carrier according to the present disclosure
  • 6 to 7 are views showing an example of steps S2 to S6,
  • FIG. 8 is a conceptual view showing an example of a transfer device of a semiconductor light emitting device according to the present disclosure
  • FIG. 9 is a view showing an example of a cooling unit according to the present disclosure.
  • FIG. 10 is a view showing another example of the transfer device of the semiconductor light emitting device according to the present disclosure.
  • FIG. 3 is a flowchart illustrating an example of a method of transferring a semiconductor light emitting device according to the present disclosure.
  • a substrate including a plurality of solder bumps and a temporary fixed layer covering the plurality of solder bumps and an adhesive carrier including a plurality of semiconductor light emitting devices are prepared (S1). Thereafter, a plurality of semiconductor light emitting elements are arranged on the plurality of solder bumps (S2). Thereafter, one of the substrate and the adhesive carrier is moved so that the temporary fixed layer contacts the plurality of semiconductor light emitting elements (S3). Thereafter, the temperature of the temporary fixed bed is lowered (S4). Thereafter, the adhesive carrier is removed (S5). Thereafter, the solder bumps are melted to bond a plurality of semiconductor semiconductor light emitting devices to the substrate (S6). Each step will be described in detail in FIGS. 4 to 7.
  • FIG. 4 is a view showing an example of a substrate according to the present disclosure.
  • FIG. 4(a) is a plan view and FIG. 4(b) is a cross-sectional view taken along AA'.
  • the substrate 100 may be a PCB (Printed Circuit Moard) on which the circuit pattern 120 is formed.
  • PCB printed Circuit Moard
  • the substrate 100 includes a circuit pattern 120 that can be electrically connected to a semiconductor light emitting element for each pixel 110.
  • the circuit pattern 120 is illustrated only in a part of the pixel 110, but the circuit pattern 120 may be formed in all the pixels 110.
  • the substrate 100 includes a plurality of solder bumps 130 used to bond the semiconductor light emitting device to the substrate 100.
  • the solder bump 130 may be a SAC (Sn-Ag-Cu) ball.
  • the substrate 100 may include a temporary fixed layer 140 covering the solder bumps 130.
  • the temporary fixing layer 140 may be formed of at least one of flux, epoxy, and epoxy flux.
  • solder bump 130 is formed of tin (Sn) or SAC (Sn-Ag-Cu)
  • tin (Sn) or SAC (Sn-Ag-Cu) there is a disadvantage that the melting point is higher than when the solder bump 130 is formed of Sn-Pb, but when using flux, tin (Sn) ) Or SAC (Sn-Ag-Cu) can be used to lower the melting point of the solder bump 130, so most of them are used when using the solder bump 130 formed of tin (Sn) or SAC (Sn-Ag-Cu). Doing.
  • the flux used as a temporary fixing layer 140 is used to form an adhesive carrier without using an adhesive layer other than the flux.
  • a plurality of semiconductor light-emitting devices attached to the substrate 100 can be temporarily fixed before bonding to the substrate 100, and will be described in detail with reference to FIGS. 6 to 7.
  • FIG. 5 is a view showing an example of an adhesive carrier according to the present disclosure.
  • Fig. 5(a) is a plan view and Fig. 5(b) is a cross-sectional view taken along BB'.
  • the adhesive carrier 200 may include an adhesive layer 202 on which the adhesive force fluctuates by ultraviolet rays on a substrate 201 through which ultraviolet rays can pass.
  • the plurality of semiconductor light emitting devices 210, 220 and 230 are arranged in contact with the adhesive layer 202.
  • the arrangement of the plurality of semiconductor light emitting devices 210, 220 and 230 may be arranged corresponding to the pixel 110 and the circuit pattern 120 of the substrate 100.
  • the virtual pixel 241 is illustrated by the dotted line 240 so as to be compared with the pixel 110 of the substrate 100.
  • one semiconductor light emitting element may be located for each virtual pixel 241, three semiconductor light emitting elements emitting different colors are positioned in the present disclosure. For example, as shown in FIG.
  • the semiconductor light emitting device 210 emitting red light, the semiconductor light emitting device 220 emitting green light, and the semiconductor light emitting device 230 emitting blue light become one unit, thereby forming a virtual pixel 241.
  • the semiconductor light emitting elements 210, 220, and 230 are shown in a part of the virtual pixel 241, but the semiconductor light emitting elements 210, 220, and 230 are positioned in all the virtual pixels 241.
  • various types of flip chips, vertical chips and lateral chips are possible for the semiconductor light emitting device, but the flip chip is preferable because it is easy to bond to the substrate 100. Referring to FIG.
  • the flip-chip type semiconductor light emitting device 210 shows that the opposite surfaces of the electrodes 211 and 212 are adhered to the adhesive carrier 200 so as to adhere to the adhesive layer 202.
  • the semiconductor light emitting devices 210, 220, and 230 are arranged to increase the adhesion of the adhesive layer 202 by irradiating ultraviolet rays after arranging the semiconductor light emitting devices 210, 220, 230 on the adhesive carrier 200, as shown in FIG. Can be fixed to the adhesive carrier 200.
  • the method of transferring the plurality of semiconductor light emitting devices 210, 220, and 230 from the wafer to the adhesive carrier 200 may be transferred using a transfer head.
  • 6 to 7 are views showing an example of steps S2 to S6.
  • Figure 6(a) shows step S2
  • Figure 6(b) shows step S3
  • Figure 6(c) shows step S4
  • Figure 7(a) shows step S5
  • Figure 7(b) shows step S6.
  • a plurality of semiconductor light emitting devices 210 of the adhesive carrier 200 are aligned on the plurality of solder bumps 130 of the substrate 100 (S2).
  • the electrodes 211 and 212 of the semiconductor light emitting device 210 are arranged to be positioned on the same dotted line 250 as the solder bumps 130.
  • one of the substrate 100 and the adhesive carrier 200 is moved to make the temporary fixed layer 140 and the plurality of semiconductor light emitting devices 210 contact (S3).
  • the thickness of the temporary fixing layer 140 is exaggerated for explanation, and the thickness of the temporary fixing layer 140 may be 0.05 mm or less. However, when the thickness of the temporary fixing layer 140 is greater than 0.05 mm, bonding failure may occur when the semiconductor light emitting device 210 is bonded to the substrate 100. When the temporary fixed layer 140 and the plurality of semiconductor light emitting devices 210 contact each other, at least a portion of the semiconductor light emitting device 210 may enter the temporary fixed layer 140. In FIG. 6( b ), the electrodes 211 and 212 of the semiconductor light emitting device 210 are inside the temporary fixed layer 140.
  • the temporary fixed layer 140 has a viscosity that allows at least a portion of the semiconductor light emitting device 210 to enter the temporary fixed layer 140.
  • the temporary fixed layer 140 is a liquid state having a constant viscosity and is not a solid state. 6(c), the temperature of the temporary fixed layer 140 is lowered while at least a portion of the semiconductor light emitting device 210 is introduced into the temporary fixed layer 140.
  • the temperature of the temporary fixed bed 140 is lowered to 0° C. or lower by continuously lowering the temperature. It is preferably lowered to minus 40°C. Since the viscosity of the temporary fixed layer 140 having a lower temperature is increased, the semiconductor light emitting device 210 may be fixed to the temporary fixed layer 140 without moving.
  • the temperature of the temporary fixed layer 140 is lowered so that the viscous size of the temporary fixed layer 140 has a size such that the semiconductor light emitting device 210 cannot move in the temporary fixed layer 140.
  • the temporary fixing layer 140 becomes completely frozen at 40°C below zero, so that the semiconductor light emitting device 210 can be more surely fixed.
  • the temporary fixed layer 140 may be maintained at about 40°C for 10 minutes.
  • the semiconductor light emitting device 210 may be damaged.
  • no additional adhesive is required since the semiconductor light emitting device 210 is fixed to the temporary fixed layer 140 by lowering the temperature, no additional adhesive is required.
  • the S4 step proceeds at a low temperature (below 0° C.) in which deformation due to heat of the adhesive carrier 200 and the substrate 100 hardly occurs due to a difference in thermal expansion coefficient between the adhesive carrier 200 and the substrate 100. Almost no problem occurs due to the arrangement of the semiconductor light emitting device 210 is disturbed.
  • the adhesive carrier 200 is separated from the semiconductor light emitting device 210 and removed (S5).
  • the UV 260 irradiation may be performed simultaneously with the cooling process of the temporary fixed layer 140 in step S4.
  • the solder bump 130 is melted to bond the plurality of semiconductor light emitting devices 210 to the substrate 100 (S6).
  • the temporary pinned layer 140 may be removed.
  • the solder bump 130 may be melted through a reflow process.
  • the semiconductor light emitting device 210 and the substrate 100 are made of a transparent material (eg, epoxy resin, silicone resin, etc.) to protect the circuit pattern 120 of the semiconductor light emitting device 210 and the substrate 100. It can be covered with an encapsulant.
  • the substrate 100 is the active matrix substrate 10 shown in FIG. 1, it can be used as it is, but in the case of a general PCB substrate, it is covered with an encapsulant and then cut in units of pixels 110 to produce three colors (eg, red, green , Blue).
  • FIG. 8 is a conceptual view showing an example of a transfer device for a semiconductor light emitting device according to the present disclosure.
  • the transfer device 300 of the semiconductor light emitting device includes a first fixing plate 310 fixing a substrate 100 including a temporary fixing layer 140 in which a plurality of solder bumps 130 are arranged and covering the plurality of solder bumps 130. ), a second fixing plate 320 to which the adhesive carrier 200 on which the plurality of semiconductor light emitting elements 210 are arranged is fixed, and a cooling unit 330 to lower the temperature of the temporary fixing layer 140 of the substrate 100.
  • it may include an ultraviolet irradiation unit 340 for irradiating ultraviolet light toward the adhesive carrier (200).
  • the position of the ultraviolet irradiation unit 340 is not limited as long as it irradiates ultraviolet light toward the adhesive carrier 200, but is preferably located on the second fixing plate 320.
  • the second fixing plate 320 is formed of a material (for example, glass) that can transmit ultraviolet rays to irradiate ultraviolet light onto the adhesive carrier 200 on the second fixing plate 320 so that the ultraviolet rays reach the adhesive carrier 200. It is desirable to be.
  • the ultraviolet irradiation unit 340 is not limited as long as it emits ultraviolet light such as a semiconductor light emitting device or a fluorescent lamp as a light source emitting ultraviolet light.
  • the cooling unit 330 may maintain the temperature of the temporary fixed layer 140 at minus 40°C within 10 minutes to make the temporary fixed layer 140 frozen.
  • the first a fixed plate 310 and the second fixed plate 320 has a vacuum suction port 311, and the substrate 100 and the adhesive carrier 200 are first and second fixed plates 310 and 300 by using the vacuum suction port 311. 2 can be fixed to the fixing plate (320).
  • a vacuum device (not shown) for sucking air through the vacuum suction port may be connected to the tube 301.
  • the first fixing plate 310, the second fixing plate 320, the cooling unit 330 and the ultraviolet irradiation unit 340 to which the body 302 can be attached to the control unit that can control the transfer device 300 (not shown) May be built-in and may control the transfer device 300 through the user interface 303.
  • the substrate 100 and the adhesive carrier 200 fixed to the first fixing plate 310 and the second fixing plate 320 are moved. Can be sorted. Moving at least one of the first fixing plate 310 and the second fixing plate 320 in the xy plane is by attaching an xy stage (not shown) to at least one of the first a fixing plate 310 and the second fixing plate 320.
  • first fixing plate 310 and the second fixing plate 320 may be moved in the z-axis direction to make the semiconductor light emitting element 210 and the temporary fixing layer 140 contact.
  • the movement in the z-axis direction may manually and automatically move at least one of the first fixing plate 310 and the second fixing plate 320 along the z-axis moving guide 304.
  • the first fixing plate 310 is at the bottom of the body 302 and the second fixing plate 320 is at the top, but is not limited thereto, and the first fixing plate 310 is the second fixing plate at the top of the body 302 ( 320) may be located in the lower portion of the body 302, in this case, the ultraviolet irradiation unit 340 and the cooling unit 330 may be placed in an appropriate position to perform each function.
  • FIG 9 is a view showing an example of a cooling unit according to the present disclosure.
  • Cooling unit 330 is not limited to the cooling method or structure as long as the temperature of the temporary fixed layer 140 is lowered.
  • the cooling unit 330 is located under the first fixing plate 310, and the cooling unit 330 uses the Peltier effect to open the first fixing plate 310. It is a method of cooling and cooling the temporary fixed layer 140 through cooling of the first fixing plate 310.
  • the cooling unit 330 may be located on the side surface of the first fixing plate 310, but is preferably located under the first fixing plate 310 for cooling efficiency.
  • metal plates 332 and 333 are positioned with the thermoelectric element 331 interposed therebetween.
  • the upper metal plate 332 may be the first fixing plate 310.
  • the cooling unit 330 may be a nitrogen gas injection nozzle 330. That is, the temperature of the temporary fixed layer 140 may be lowered by injecting nitrogen gas supplied through a tube (not shown) into the temporary fixed layer 140 through the injection nozzle 330.
  • the nitrogen gas is used, the first fixing plate 310 does not need to be cooled, so the first fixing plate 310 does not need to use a material having good heat transfer rate, such as metal.
  • FIG. 10 is a view showing another example of a transfer device for a semiconductor light emitting device according to the present disclosure.
  • the transfer device of the semiconductor light emitting device may include a cover 350 covering the first fixing plate 310.
  • the semiconductor light emitting device 210 may be bonded to the substrate 100 by covering the cover 350 and performing a reflow process corresponding to step S6 inside the cover 350.
  • the semiconductor light emitting device transfer device is substantially the same as the semiconductor light emitting device transfer device shown in FIG. 8 except for those described with reference to FIG. 10.
  • a method for transferring a semiconductor light emitting device comprising: preparing a substrate including a temporary fixed layer covering a plurality of solder bumps and covering a plurality of solder bumps and an adhesive carrier having a plurality of semiconductor light emitting devices; Aligning a plurality of semiconductor light emitting elements of the adhesive carrier to correspond to a plurality of solder bumps on the substrate; Moving one of the substrate and the adhesive carrier so that the temporary fixed layer contacts the plurality of semiconductor light emitting elements; Lowering the temperature of the temporary fixed bed; And bonding the plurality of semiconductor semiconductor light emitting elements to the substrate by melting the solder bumps.
  • a method of transferring a semiconductor light emitting device comprising the step of lowering the temperature of the temporary fixing layer and removing the adhesive carrier between the step of bonding a plurality of semiconductor semiconductor light emitting devices to a substrate by melting solder bumps.
  • the temporary fixing layer is a method of transferring a semiconductor light emitting device formed of one of flux, epoxy, and epoxy flux.
  • the step of moving one of the substrate and the adhesive carrier so that the plurality of semiconductor light emitting elements come into contact with the temporary fixed layer is a method of transferring a semiconductor light emitting element moving so that at least a portion of the semiconductor light emitting element enters the temporary fixed layer.
  • the step of lowering the temperature of the temporary fixed layer is a method of transferring a semiconductor light emitting device to lower the temperature of the temporary fixed layer to 0°C or less.
  • the step of lowering the temperature of the temporary pinned layer is a method of transferring a semiconductor light emitting device to lower the temperature of the temporary pinned layer to make the state of the temporary pinned layer from a liquid state to a solid state.
  • the step of lowering the temperature of the temporary pinned layer is a method of transferring the semiconductor light emitting element by lowering the temperature of the temporary pinned layer so that the viscosity of the temporary pinned layer is greater than or equal to the size at which the semiconductor light emitting element is fixed to the temporary pinned layer.
  • a method of transporting a semiconductor light emitting device comprising irradiating ultraviolet rays to the adhesive carrier to lower the adhesive force between the adhesive carrier and the plurality of semiconductor light emitting elements.
  • a method of transporting a semiconductor light-emitting device wherein the adhesive carrier comprises a substrate that transmits ultraviolet rays and an adhesive layer whose adhesive force varies with ultraviolet rays.
  • Arrangement of a plurality of semiconductor light emitting elements in an adhesive carrier is a method of transferring a semiconductor light emitting element in which three semiconductor light emitting elements emitting different colors are arranged in one unit.
  • the solder bump is a SAC ball, and the upper surface of the solder bump is a flat surface of the semiconductor light emitting device transfer method.
  • a semiconductor light emitting device transfer apparatus comprising: a first fixing plate for fixing a substrate including a temporary fixing layer in which a plurality of solder bumps are arranged and covering a plurality of solder bumps; A second fixing plate to which an adhesive carrier in which a plurality of semiconductor light emitting elements are arranged is fixed; And a cooling unit that lowers the temperature of the temporary fixed layer of the substrate.
  • a UV light irradiating unit for irradiating ultraviolet light toward the adhesive carrier
  • the second fixing plate is a semiconductor light emitting device transfer device formed of a material that can transmit ultraviolet rays.
  • the cooling unit is a device for transferring a semiconductor light emitting device that lowers the temperature of the temporary fixed layer to 0°C or less.
  • the cooling unit is a semiconductor light emitting device transfer device that maintains the temperature of the temporary fixed layer at minus 40°C within 10 minutes.
  • the first fixing plate includes a vacuum suction port, and a semiconductor light emitting device transfer device for fixing the substrate to the first fixing plate using the vacuum suction port.
  • the second fixing plate includes a vacuum suction port, and a semiconductor light emitting device transfer device for fixing the adhesive carrier to the second fixing plate using the vacuum suction port.
  • a semiconductor light emitting device transfer device that moves at least one of the first fixing plate and the second fixing plate in the xy plane to align the substrate and the adhesive carrier.
  • a semiconductor light emitting device transfer device that moves at least one of the first fixed plate and the second fixed plate in the z-axis direction to contact the temporary fixed layer of the substrate and the plurality of semiconductor light emitting elements of the adhesive carrier.
  • a cover for covering the first fixing plate includes, a semiconductor light emitting device transfer device capable of a reflow process inside the cover while the cover is covered.
  • a transfer device for a semiconductor light emitting device that solves the problem of a method for transporting a semiconductor light emitting device using an adhesive carrier without using a transport head.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

La présente invention concerne un procédé de transfert d'éléments électroluminescents à semi-conducteur, le procédé comprenant : une étape consistant à préparer un substrat sur lequel une pluralité de bossages de soudure sont agencés et qui comprend une couche fixe temporaire qui recouvre la pluralité de bossages de soudure, et à préparer un support adhésif dans lequel une pluralité d'éléments électroluminescents à semi-conducteurs sont agencés ; une étape dans laquelle la pluralité d'éléments électroluminescents à semi-conducteurs du support adhésif sont agencés de manière correspondante sur la pluralité de bossages de soudure du substrat ; une étape consistant à déplacer un élément parmi le substrat et le support adhésif de telle sorte que la couche fixe temporaire entre en contact avec la pluralité d'éléments électroluminescents à semi-conducteurs ; une étape consistant à abaisser la température de la couche fixe temporaire ; et une étape consistant à faire fondre les bossages de soudure et à lier la pluralité d'éléments électroluminescents à semi-conducteurs au substrat.
PCT/KR2020/000358 2019-01-15 2020-01-09 Procédé de transfert d'éléments électroluminescents à semi-conducteurs WO2020149571A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020190005202A KR20200088933A (ko) 2019-01-15 2019-01-15 반도체 발광소자의 이송장치
KR10-2019-0005201 2019-01-15
KR1020190005201A KR102121407B1 (ko) 2019-01-15 2019-01-15 반도체 발광소자의 이송방법
KR10-2019-0005202 2019-01-15

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WO2020149571A1 true WO2020149571A1 (fr) 2020-07-23

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335386A (ja) * 1997-05-30 1998-12-18 T I F:Kk 半導体実装方法
JP2014229856A (ja) * 2013-05-27 2014-12-08 パナソニック株式会社 電子部品実装方法
JP2016167544A (ja) * 2015-03-10 2016-09-15 ソニー株式会社 電子部品、電子部品実装基板及び電子部品の実装方法
KR20170011427A (ko) * 2015-07-23 2017-02-02 삼성전자주식회사 반도체 패키지의 범프 본딩 방법 및 이를 수행하기 위한 장치
KR20170096127A (ko) * 2014-12-19 2017-08-23 글로 에이비 백플레인 상에 발광 다이오드 어레이 제조 방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335386A (ja) * 1997-05-30 1998-12-18 T I F:Kk 半導体実装方法
JP2014229856A (ja) * 2013-05-27 2014-12-08 パナソニック株式会社 電子部品実装方法
KR20170096127A (ko) * 2014-12-19 2017-08-23 글로 에이비 백플레인 상에 발광 다이오드 어레이 제조 방법
JP2016167544A (ja) * 2015-03-10 2016-09-15 ソニー株式会社 電子部品、電子部品実装基板及び電子部品の実装方法
KR20170011427A (ko) * 2015-07-23 2017-02-02 삼성전자주식회사 반도체 패키지의 범프 본딩 방법 및 이를 수행하기 위한 장치

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