WO2020143487A1 - 感光元件、x射线探测器及显示装置 - Google Patents

感光元件、x射线探测器及显示装置 Download PDF

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WO2020143487A1
WO2020143487A1 PCT/CN2019/129339 CN2019129339W WO2020143487A1 WO 2020143487 A1 WO2020143487 A1 WO 2020143487A1 CN 2019129339 W CN2019129339 W CN 2019129339W WO 2020143487 A1 WO2020143487 A1 WO 2020143487A1
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layer
photosensitive element
light
doped
doped layer
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French (fr)
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卓恩宗
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HKC Co Ltd
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HKC Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H10F30/295—Surface barrier or shallow PN junction radiation detectors, e.g. surface barrier alpha-particle detectors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/16—Constructional details or arrangements
    • G06F1/1613—Constructional details or arrangements for portable computers
    • G06F1/1633—Constructional details or arrangements of portable computers not specific to the type of enclosures covered by groups G06F1/1615 - G06F1/1626
    • G06F1/1684—Constructional details or arrangements related to integrated I/O peripherals not covered by groups G06F1/1635 - G06F1/1675
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers

Definitions

  • the present application relates to the field of detectors, in particular to a photosensitive element, X-ray detector and display device.
  • X-ray detectors are widely used in medical instruments, such as chest X-ray imaging using X-rays; in the example, the photoelectric conversion function of X-ray detectors is mainly performed by amorphous silicon photosensitive elements, and X-rays pass through the scintillator (currently Mainly CsI) is converted into visible light, and then the visible light is converted into an electrical signal by an amorphous silicon photosensitive element by a thin film transistor (TFT). Since the structure of amorphous silicon is not stable enough and the light conversion efficiency is low, the light wave range absorbed by the amorphous silicon photosensitive element is wide, and the light conversion is not sensitive enough, which directly affects the photoelectric conversion efficiency of the X-ray detector.
  • amorphous silicon photosensitive elements currently Mainly CsI
  • TFT thin film transistor
  • the main purpose of the present application is to provide a photosensitive element, an X-ray detector and a display device, which improve the light wave range absorbed by the amorphous silicon photodiode and the conversion sensitivity to light.
  • the photosensitive element proposed in this application includes:
  • a first doped layer, the first doped layer is provided on the light incident side of the intrinsic layer;
  • a second doped layer, the second doped layer is provided on the light exit side of the intrinsic layer
  • the intrinsic layer, the first doped layer, and the second doped layer are all doped with dopants, and the intrinsic layer, the first doped layer, and the second Silicon ions are implanted into the doped layer.
  • the dopant includes at least one of SiNx, SiOxCy, SiCx, and SiOxNy.
  • the first doped layer is further doped with P-type dopants.
  • the second doped layer is further doped with N-type dopants.
  • the absorption wavelength of the photosensitive element is 400 nm to 670 nm.
  • the incident light received by the photosensitive element is visible light.
  • the photosensitive element further includes a first electrode layer and a second electrode layer, the second doped layer, the intrinsic layer, and the first doped layer are stacked on the first electrode layer from bottom to top, and the second electrode The layer is disposed on the first doped layer.
  • the X-ray detector includes a substrate and a photosensitive element, the photosensitive element is provided on the substrate, wherein the photosensitive element includes:
  • a first doped layer the first doped layer provided on the light incident side of the intrinsic layer
  • a second doped layer, the second doped layer is provided on the light exit side of the intrinsic layer
  • the intrinsic layer, the first doped layer and the second doped layer are all doped with dopants, and in the intrinsic layer, the first doped layer and the Silicon ions are implanted into the second doped layer;
  • the X-ray detector also includes:
  • a light conversion layer which is provided on the light incident side of the X-ray detector and converts X-rays into visible light, and the photosensitive element receives the light signal of the visible light and converts the light signal into electricity signal;
  • a signal reading element provided on the substrate and electrically connected to the photosensitive element to receive and read the converted electrical signal of the photosensitive element;
  • a light shielding layer is located between the light conversion layer and the signal reading element to block the visible light converted by the light conversion layer from being incident on the signal reading element.
  • the dopant includes at least one of SiNx, SiOxCy, SiCx, and SiOxNy.
  • the absorption wavelength of the photosensitive element is 400 nm to 670 nm.
  • the photosensitive element further includes a first electrode layer and a second electrode layer, the second doped layer, the intrinsic layer, and the first doped layer are stacked on the first electrode layer from bottom to top, and the second electrode The layer is disposed on the first doped layer.
  • the X-ray detector further includes a protective layer, the protective layer is filled in a gap between the signal reading element and the light conversion layer, and the light shielding layer and the signal reading element And the photosensitive element is isolated from the external environment.
  • the light conversion layer is a cesium iodide scintillator arranged in a column.
  • the light conversion layer is attached to a side of the protective layer facing away from the signal reading element.
  • the absorption wavelength of the light conversion layer is 420 nm to 560 nm.
  • the signal reading element is a thin film transistor structure.
  • the display device includes an X-ray detector, the X-ray detector includes a substrate and a photosensitive element, and the photosensitive element is provided on the substrate, wherein the photosensitive element includes:
  • a first doped layer the first doped layer provided on the light incident side of the intrinsic layer
  • a second doped layer, the second doped layer is provided on the light exit side of the intrinsic layer
  • the intrinsic layer, the first doped layer and the second doped layer are all doped with dopants, and in the intrinsic layer, the first doped layer and the Silicon ions are implanted into the second doped layer;
  • the X-ray detector also includes:
  • a light conversion layer which is provided on the light incident side of the X-ray detector and converts X-rays into visible light, and the photosensitive element receives the light signal of the visible light and converts the light signal into electricity signal;
  • a signal reading element provided on the substrate and electrically connected to the photosensitive element to receive and read the converted electrical signal of the photosensitive element;
  • a light shielding layer is located between the light conversion layer and the signal reading element, so as to block the visible light converted by the light conversion layer from being incident on the signal reading element;
  • the display device further includes an imaging device, and the imaging device is electrically connected to the signal reading element.
  • Embodiments of the present application provide a photosensitive element, an X-ray detector, and a display device.
  • the photosensitive element includes: an intrinsic layer; a first doped layer, and the first doped layer is provided at an inlet of the intrinsic layer Light side; second doped layer, the second doped layer is provided on the light emitting side of the intrinsic layer; the intrinsic layer, the first doped layer and the second doped layer are all Dopants are doped, and silicon ions are implanted into the intrinsic layer, the first doped layer, and the second doped layer.
  • the contact area of light can be increased, thereby increasing the sensitivity of the photosensitive element to light, making the photoelectric conversion performance of the photosensitive element better, and the photoelectric conversion efficiency of the photosensitive element more high.
  • FIG. 1 is a schematic structural diagram of a photosensitive element according to an embodiment of the present application.
  • FIG. 2 is a schematic structural diagram of a photosensitive element according to another embodiment of this application.
  • FIG. 3 is a schematic structural diagram of an X-ray detector according to an embodiment of the present application.
  • first, second, etc. are for descriptive purposes only, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated.
  • the features defined as “first” and “second” may include at least one of the features either explicitly or implicitly.
  • the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of those skilled in the art to achieve. When the combination of technical solutions conflicts with each other or cannot be realized, it should be considered that the combination of such technical solutions does not exist , Nor within the scope of protection required by this application.
  • FIG. 1 a schematic structural diagram of a photosensitive element of an embodiment of the present application is shown.
  • the photosensitive element includes an intrinsic layer 1, a first doped layer 2 and a second doped layer 3; wherein, the second doped layer 3, the intrinsic layer 1 and the first doped layer 2 are sequentially stacked from bottom to top, and Form a PIN structure, that is, in a specific embodiment, the photosensitive element is a PIN-type photodiode, the photodiode is set to sense the intensity of light, and convert the light signal of the light into an electrical signal, thereby transmitting the electrical signal to The signal reading element 8.
  • the second doped layer 3 can serve as the first electrode of the photosensitive element, and the first doped layer 2 can serve as the second electrode of the photosensitive element.
  • the first electrode is electrically connected to the signal reading element 8, ie The electrical signal can be transmitted to the signal reading element 8.
  • the photosensitive element further includes a substrate 4, a first electrode layer 5 and a second electrode layer 6; wherein, the first electrode layer 5 is disposed on the substrate 4 and the second doped
  • the layer 3, the intrinsic layer 1 and the first doped layer 2 are stacked on the first electrode layer 5 from bottom to top, and the second electrode layer 6 is disposed on the first doped layer 2.
  • the substrate 4 is configured to support the entire photosensitive element, and the first electrode layer 5 is configured to transmit the electrical signal converted by the photosensitive element to the signal reading element 8, that is, the first electrode layer 5 is electrically connected to the signal transmission element.
  • the first doped layer 2 is provided on the light incident side of the intrinsic layer 1
  • the second doped layer 3 is provided on the light emitting side of the intrinsic layer 1.
  • the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 are all doped with dopants, and in the intrinsic layer 1, the first doped layer 2 and the second doped layer Silicon ions are implanted into the impurity layer 3.
  • the dopant is an insulating dopant, that is, the intrinsic layer 1, the first doped layer 2, and the second doped layer 3 are non-conductive.
  • the intrinsic layer 1, the first Both a doped layer 2 and a second doped layer 3 are implanted with silicon ions to change the structure of the intrinsic layer 1, the first doped layer 2 and the second doped layer 3, when the implanted silicon ions reach a predetermined amount
  • the dopant changes from an insulating dopant to a semiconductor dopant the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 can be made conductive to transfer photoelectric signals.
  • the predetermined amount of silicon ion implantation can be determined according to the temperature and pressure at the time of implantation, as long as the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 can be changed to semiconductor structures, It is sufficient to conduct the photoelectric signal, and there is no limit here.
  • the first doped layer 2 is the second electrode, and is electrically connected to the intrinsic layer 1, when a voltage is applied between the first doped layer 2 and the second doped layer 3, the light is doped from the first
  • the layer 2 enters the intrinsic layer 1, and the intrinsic layer 1 detects the intensity of the light and converts the light signal of the light into an electrical signal, which is transmitted from the second doped layer 3 to the signal reading element 8, which is One electrode is transmitted to the signal reading element 8.
  • the incident light received by the photosensitive element should be visible light.
  • the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 are all doped with dopants, and the intrinsic layer 1 and the first doped layer 2 are used
  • silicon ions are implanted into the second doped layer 3, so that the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 become semiconductor structures to conduct photoelectric signals.
  • the dopant is SiNx (silicon nitride), which is an insulating crystal structure, that is, in this embodiment, the intrinsic layer 1, the first doped layer 2 and the second doped Silicon ions are implanted into the layer 3 to change the structure of silicon nitride, so that the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 are changed to semiconductor structures to conduct photoelectric signals.
  • SiNx silicon nitride
  • the dopant is SiNx (silicon nitride), which is an insulating crystal structure, that is, in this embodiment, the intrinsic layer 1, the first doped layer 2 and the second doped Silicon ions are implanted into the layer 3 to change the structure of silicon nitride, so that the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 are changed to semiconductor structures to conduct photoelectric signals.
  • the concentration of nitrogen ions can be changed by changing the value of X.
  • the value of X is 0.1 to 1.33. That is, when the value of X changes, the concentration of nitrogen ions and silicon ions in silicon nitride changes. For example, when X is 0.1, the concentration ratio of nitrogen ions and silicon ions in silicon nitride is 1:10. When X is 0.2, the concentration ratio of nitrogen ions and silicon ions in silicon nitride is 1:5.
  • the concentration ratio of nitrogen ions and silicon ions in silicon nitride can be changed by changing the value of X Changes, so that the light absorption wavelength of the photosensitive element changes, that is, in this embodiment, the light absorption wavelength of the photosensitive element is 400nm ⁇ 670nm, the specific value is adjusted according to the concentration ratio of nitrogen ions and silicon ions in silicon nitride, Thereby improving the light sensitivity of the photosensitive element.
  • the dopant may also be at least one of SiOxCy (silicon oxycarbide), SiCx (silicon carbide), and SiOxNy (silicon oxynitride).
  • SiOxCy silicon oxycarbide
  • SiCx silicon carbide
  • SiOxNy silicon oxynitride
  • the concentration of oxygen ions and carbon ions in silicon oxycarbide can be adjusted according to the values of X and Y, that is, the values of X and Y in silicon oxycarbide are both 0.1 ⁇ 1.0, that is, by changing X, Y
  • the concentration ratio of carbon ions and oxygen ions in silicon oxycarbide to change the light absorption wavelength of the photosensitive element that is, in this embodiment, the light absorption wavelength of the photosensitive element is 400nm ⁇ 670nm
  • the specific value is adjusted according to the concentration ratio of carbon ions and oxygen ions in silicon nitride, thereby improving the light sensitivity of the photosensitive element.
  • the concentration of carbon ions in silicon carbide can be adjusted according to the value of X, that is, the value of X in silicon carbide is 0.1 ⁇ 1.0, that is, the carbon in silicon oxycarbide can be changed by changing the value of X Ion concentration, so that the concentration ratio of carbon ions and oxygen ions changes, so that the light absorption wavelength of the photosensitive element changes, that is, in this embodiment, the light absorption wavelength of the photosensitive element is 400nm ⁇ 670nm, the specific value depends on the nitridation
  • the concentration ratio of carbon ions and oxygen ions in silicon is adjusted to improve the light sensitivity of the photosensitive element.
  • the concentration of oxygen ions and nitrogen ions in silicon oxynitride can be adjusted according to the values of X and Y, that is, the value of X in silicon oxycarbide is 0.1 ⁇ 1.5, and the value of Y is 0.1 ⁇ 1.3, that is
  • the concentration ratio of oxygen ions and nitrogen ions in silicon oxynitride can be changed by changing the values of X and Y, thereby changing the light absorption wavelength of the photosensitive element, that is, in this embodiment, the light absorption wavelength of the photosensitive element From 400nm to 670nm, the specific value is adjusted according to the concentration ratio of carbon ions and oxygen ions in silicon nitride, thereby improving the light sensitivity of the photosensitive element.
  • the dopant is one or a combination of two or more of SiNx, SiOxCy, SiCx, SiOxNy, and the photosensitive element can be adjusted by changing the concentration of each ion between the dopants The light absorbs the wavelength, thereby improving the light sensitivity of the photosensitive element.
  • the light absorption wavelength of the photosensitive element is 400 nm to 670 nm, that is, the light absorbed by the photosensitive element is visible light.
  • the first doped layer 2 is further doped with a P-type dopant, that is, the first doped layer 2 forms a P-type semiconductor.
  • the second doped layer 3 is further doped with N-type dopants, and the second doped layer 3 forms an N-type semiconductor, that is, the first doped layer 2 is doped with P-type dopants and the second doped layer
  • the impurity layer 3 is doped with N-type dopants, which can improve the performance and stability of the first doped layer 2 and the second doped layer 3, thereby improving the performance and stability of the photosensitive element.
  • the P-type dopant is boron ions, and optionally, the P-type dopant is a B2H6 (hydrogen boride) compound.
  • the N-type dopant is phosphorus ions, and optionally, the P-type dopant is a PH3 (phosphine) compound.
  • the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 are all doped with dopants, and the intrinsic layer 1 and the first doped layer 2 are used And silicon ions are implanted into the second doped layer 3, so that the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 become semiconductor structures to conduct photoelectric signals.
  • the photosensitive element of the embodiment of the present application has more sensitive photoelectric conversion performance, so that the photoelectric conversion efficiency of the photosensitive element is higher.
  • the X-ray detector includes a substrate 4 and the photosensitive element in the foregoing embodiment.
  • the photosensitive element is provided on the substrate 4 on.
  • the second doped layer 3 of the photosensitive element is provided on the substrate 4 or the second electrode of the photosensitive element is provided on the substrate 4.
  • the substrate 4 may be a glass substrate 4, a silicon wafer, a polyimide PI plastic substrate 4, etc., which is not limited herein.
  • the photosensitive element includes an intrinsic layer 1, a first doped layer 2 and a second doped layer 3.
  • the first doped layer 2 is provided in the intrinsic layer 1
  • the second doped layer 3 is provided on the light exit side of the intrinsic layer 1, the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 are all doped with dopants, and in the intrinsic In the layer 1, the first doped layer 2 and the second doped layer 3, silicon ions are implanted.
  • the dopant is an insulating dopant, that is, the intrinsic layer 1, the first doped layer 2, and the second doped layer 3 are non-conductive. Therefore, in this embodiment, the intrinsic layer 1, the first Both a doped layer 2 and a second doped layer 3 are implanted with silicon ions to change the structure of the intrinsic layer 1, the first doped layer 2 and the second doped layer 3, when the implanted silicon ions reach a predetermined amount When the dopant changes from an insulating dopant to a semiconductor dopant, the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 can be made conductive to transfer photoelectric signals.
  • the predetermined amount of silicon ion implantation can be determined according to the temperature and pressure at the time of implantation, as long as the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 can be changed to semiconductor structures, It is sufficient to conduct the photoelectric signal, and there is no limit here.
  • the dopant includes at least one of SiNx, SiOxCy, SiCx, and SiOxNy.
  • the absorption wavelength of the photosensitive element is 400 nm to 670 nm.
  • the photosensitive element further includes a substrate 4, a first electrode layer 5 and a second electrode layer 6; wherein, the first electrode layer 5 is provided on the substrate 4, the second doped layer 3, the The characteristic layer 1 and the first doped layer 2 are stacked on the first electrode layer 5 from bottom to top, and the second electrode layer 6 is disposed on the first doped layer 2.
  • the substrate 4 is configured to support the entire photosensitive element, and the first electrode layer 5 is configured to transmit the electrical signal converted by the photosensitive element to the signal reading element 8, that is, the first electrode layer 5 is electrically connected to the signal transmission element to The photosensitive element and the signal reading element 8 are connected via the first electrode layer 5 and the second electrode layer 6.
  • the X-ray detector further includes a light conversion layer 7, a signal reading element 8 and a light shielding layer 9.
  • the light conversion layer 7 is provided on the light incident side of the X-ray detector and converts X-rays into visible light
  • the photosensitive element receives the optical signal of visible light, and converts the light signal into an electrical signal
  • the signal reading element 8 is provided on the substrate 4 and electrically connected to the photosensitive element to receive and read the electrical signal converted by the photosensitive element
  • the light shielding layer 9 is located between the light conversion layer 7 and the signal reading element 8 to block the visible light incident after the light conversion layer 7 is converted Onto the signal reading element 8.
  • the signal reading element 8 may be a TFT (thin film transistor) structure, which is configured to read the electrical signal of the photosensitive element, and the electrical signal is a current signal.
  • TFT thin film transistor
  • the X-ray detector is further provided with an X-ray generator (not shown), which is arranged to emit X-rays, and the X-ray detector is provided on the light entrance side of the X-ray generator, that is, the light conversion layer 7 Set on the light entrance side of the X-ray detector.
  • the light conversion layer 7 is a cesium iodide scintillator arranged in a columnar shape, and is configured to convert X-rays into visible light and irradiate the photosensitive element.
  • the light absorption wavelength of the light conversion layer 7 is 420 nm-560 nm.
  • other dopants may be doped in the light conversion layer 7 to absorb visible light of a specific wavelength.
  • doping the light conversion layer 7 with thallium ions may absorb visible light with a wavelength of 550 nm.
  • the drain of the signal reading element 8 is provided on the substrate 4 and is electrically connected to the second doped layer 3 of the photosensitive element to conduct electrical signals.
  • the drain of the signal reading element 8 and the second doped layer 3 of the photosensitive element are common electrodes, which makes the transmission of electrical signals more efficient and faster.
  • the light shielding layer 9 is provided between the light conversion layer 7 and the signal reading element 8, thereby blocking the visible light converted by the light conversion layer 7 from irradiating the active layer of the signal reading element 8, thereby destroying The efficiency of the entire signal reading element 8.
  • the X-ray detector further includes a protective layer 10, which is filled in the gap between the signal reading element 8 and the light conversion layer 7, and the light shielding layer 9, the signal reading element 8 and The photosensitive element is isolated from the external environment.
  • each element of the X-ray detector needs to be strictly isolated from the external environment. Therefore, the protective layer 10 fills the gap between the signal reading element 8 and the light conversion layer 7 to remove the light shielding layer 9 The signal reading element 8 and the photosensitive element are isolated from the external environment.
  • the light conversion layer 7 is attached to the side of the protective layer 10 facing away from the signal reading element.
  • the protective layer 10 is arranged to support the light conversion layer 7, that is, the phase of the light conversion layer 7 and the protective layer 10 is increased. Capacitance, reducing the loss of visible light converted by the light conversion layer 7, can improve the utilization of light.
  • the light conversion layer 7 may also be a cesium iodide scintillator deposited on a substrate through chemical weather to form a light conversion film, and the light conversion film is attached to the protective layer 10, optionally, the The light conversion film can be attached to the protective layer 10 by using adhesives, double-sided adhesives, etc., and is not limited in this application.
  • the cesium iodide in the light conversion layer 7 can be directly deposited on the protective layer 10 by chemical meteorological deposition, for example, the cesium iodide can be directly heated to the melting point of cesium iodide to make it iodide Cesium becomes gas, and then deposited on the protective layer 10, it can also increase the compatibility of the light conversion layer 7 and the protective layer 10, reduce the loss of visible light converted by the light conversion layer 7, can improve the utilization of light .
  • the photosensitive element by arranging the photosensitive element on the side of the signal reading element 8, the photosensitive element can receive visible light irradiation in a large area without being limited by the signal reading element 8, and has high photoelectric conversion efficiency.
  • the arrangement of the photosensitive element between the light conversion layer 7 and the light-shielding layer 9 can reduce the irradiation time under X-ray or reduce the irradiation intensity of X-ray, because the X-ray detector has a high
  • the photoelectric conversion efficiency can achieve the same imaging effect, thus reducing the impact of X-rays.
  • the X-ray detector of the present application uses the photosensitive element of the above embodiment, and the photosensitive element can increase the contact area of light by implanting silicon ions, thereby improving the sensitivity of the photosensitive element to light, and making the photoelectric conversion performance of the photosensitive element better, and The photoelectric conversion efficiency of the photosensitive element is higher, that is, the photoelectric conversion efficiency of the X-ray detector is improved.
  • an embodiment of the present application further proposes a display device including the aforementioned X-ray detector and imaging device (not shown).
  • the X-ray detector and imaging device Connected, the electrical signal generated by the X-ray detector due to the photoelectric effect forms an image through the imaging device.
  • the X-ray detector includes a substrate 4 and the photosensitive element in the above embodiment, and the photosensitive element is provided on the substrate 4.
  • the second doped layer 3 of the photosensitive element is provided on the substrate 4 or the second electrode of the photosensitive element is provided on the substrate 4.
  • the substrate 4 may be a glass substrate 4, a silicon wafer, a polyimide PI plastic substrate 4, etc., which is not limited herein.
  • the photosensitive element includes an intrinsic layer 1, a first doped layer 2 and a second doped layer 3, the first doped layer 2 is provided on the light incident side of the intrinsic layer 1, The second doped layer 3 is provided on the light exit side of the intrinsic layer 1, the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 are all doped with dopants, and in the intrinsic layer 1, Silicon ions are implanted into both the first doped layer 2 and the second doped layer 3.
  • the dopant is an insulating dopant, that is, the intrinsic layer 1, the first doped layer 2, and the second doped layer 3 are non-conductive. Therefore, in this embodiment, the intrinsic layer 1, the first Both a doped layer 2 and a second doped layer 3 are implanted with silicon ions to change the structure of the intrinsic layer 1, the first doped layer 2 and the second doped layer 3, when the implanted silicon ions reach a predetermined amount When the dopant is changed from an insulating dopant to a semiconductor dopant, the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 can be made conductive to transfer photoelectric signals.
  • the predetermined amount of silicon ion implantation can be determined according to the temperature and pressure at the time of implantation, as long as the intrinsic layer 1, the first doped layer 2 and the second doped layer 3 can be changed to semiconductor structures, It is sufficient to conduct photoelectric signals, and there is no limit here.
  • the X-ray detector further includes a light conversion layer 7, a signal reading element 8 and a light shielding layer 9.
  • the light conversion layer 7 is provided on the light incident side of the X-ray detector and converts X-rays into visible light
  • the photosensitive element receives the optical signal of visible light, and converts the light signal into an electrical signal
  • the signal reading element 8 is provided on the substrate 4 and electrically connected to the photosensitive element to receive and read the electrical signal converted by the photosensitive element
  • the light shielding layer 9 is located between the light conversion layer 7 and the signal reading element 8 to block the visible light incident after the light conversion layer 7 is converted Onto the signal reading element 8.
  • the light-shielding layer 9 is provided between the light conversion layer 7 and the signal reading element 8, thereby blocking the visible light converted by the light conversion layer 7 from irradiating the active layer of the signal reading element 8 to prevent damage to The efficiency of the entire signal reading element 8.
  • the photosensitive element functioning as a photoelectric converter in the X-ray detector has sensitive and efficient photoelectric conversion performance, under the same imaging effect, the X-ray irradiation intensity or irradiation time can be reduced, and the X The effect of long-term radiation exposure.
  • the technical solution of the present application uses the above-mentioned X-ray detector, and the photosensitive element of the X-ray detector can increase the contact area of light by implanting silicon ions, thereby improving the sensitivity of the photosensitive element to light and making the photoelectric conversion performance of the photosensitive element more Good, and the photoelectric conversion efficiency of the photosensitive element is higher, thereby improving the photoelectric conversion efficiency of the X-ray detector, that is, the photoelectric conversion efficiency of the display device.

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Abstract

本申请提供了一种感光元件，包括：本征层（1）；第一掺杂层（2），所述第一掺杂层（2）设于所述本征层（1）的入光侧；第二掺杂层（3），所述第二掺杂层（3）设于所述本征层（1）的出光侧；所述本征层（1）、所述第一掺杂层（2）以及所述第二掺杂层（3）中均掺杂有掺杂物，且在所述本征层（1）、所述第一掺杂层（2）以及所述第二掺杂层（3）中均注入硅离子。本申请还提出一种X射线探测器及显示装置。

Description

感光元件、X射线探测器及显示装置
本申请要求2019年1月11日申请的，申请号为201910038703.6，名称为“感光元件、X射线探测器及显示装置”的中国专利申请的优先权，在此将其全文引入作为参考。
技术领域
本申请涉及探测器领域，特别涉及一种感光元件、X射线探测器及显示装置。
 背景技术
这里的陈述仅提供与本申请有关的背景信息，而不必然地构成现有技术。
X射线探测器广泛应用于医疗仪器上，如，利用X射线进行胸透成像；在示例性中，X射线探测器的光电转换功能主要由非晶硅感光元件完成，X射线经闪烁体（目前主要为CsI）转换成可见光，再经非晶硅感光元件将可见光转换成电信号由薄膜晶体管（Thin film transistor,简称TFT）。由于非晶硅的结构不够稳定、光转换效率低，导致非晶硅感光元件吸收的光波范围较宽，对光的转换不够灵敏，直接影响了X射线探测器的光电转换效率。
 技术解决方案
本申请的主要目的是提供一种感光元件、X射线探测器及显示装置，提高了非晶硅光电二极管吸收的光波范围，以及对光的转换灵敏度。
为实现上述目的，本申请提出的感光元件，所述感光元件包括：
本征层；
第一掺杂层，所述第一掺杂层设于所述本征层的入光侧；
第二掺杂层，所述第二掺杂层设于所述本征层的出光侧；
所述本征层、所述第一掺杂层以及所述第二掺杂层中均掺杂有掺杂物，且在所述本征层、所述第一掺杂层以及所述第二掺杂层中均注入硅离子。
可选地，所述掺杂物至少包括SiNx、SiOxCy、SiCx、SiOxNy中的一种。
可选地，所述第一掺杂层中还掺杂有P型掺杂物。
可选地，所述第二掺杂层中还掺杂有N型掺杂物。
可选地，所述感光元件的吸收波长为400nm~670nm。
可选地，感光元件接收的入射光线为可见光。
可选地，所述感光元件还包括第一电极层以及第二电极层，第二掺杂层、本征层以及第一掺杂层由下至上层叠设置在第一电极层上，第二电极层设置在第一掺杂层上。
可选地，所述X射线探测器包括基板以及感光元件，所述感光元件设于所述基板上，其中，所述感光元件包括：
本征层；
第一掺杂层，所述第一掺杂层设于所述本征层的入光侧；以及
第二掺杂层，所述第二掺杂层设于所述本征层的出光侧；
其中，所述本征层、所述第一掺杂层以及所述第二掺杂层中均掺杂有掺杂物，且在所述本征层、所述第一掺杂层以及所述第二掺杂层中均注入硅离子；
所述X射线探测器还包括：
光转换层，所述光转换层设于所述X射线探测器的入光侧并将X射线转换成可见光，所述感光元件接收所述可见光的光信号，并将所述光信号转换成电信号；
信号读取元件，所述信号读取元件设于所述基板上且与所述感光元件电连接，以接收并读取所述感光元件转换后的电信号；以及
遮光层，所述遮光层位于所述光转换层与所述信号读取元件之间，以遮挡所述光转换层转换后的可见光入射到所述信号读取元件上。
可选地，所述掺杂物至少包括SiNx、SiOxCy、SiCx、SiOxNy中的一种。
可选地，所述感光元件的吸收波长为400nm~670nm。
可选地，所述感光元件还包括第一电极层以及第二电极层，第二掺杂层、本征层以及第一掺杂层由下至上层叠设置在第一电极层上，第二电极层设置在第一掺杂层上。
可选地，所述X射线探测器还包括保护层，所述保护层填充于所述信号读取元件与所述光转换层之间的空隙，将所述遮光层、所述信号读取元件及所述感光元件与外界环境隔离。
可选地，所述光转换层为采用柱状排列的碘化铯闪烁体。
可选地，所述光转换层贴合于所述保护层背离所述信号读取元件的一侧。
可选地，所述光转换层的吸收波长为420nm~560nm。
可选地，所述信号读取元件为薄膜晶体管结构。
可选地，所述显示装置包括X射线探测器，所述X射线探测器包括基板以及感光元件，所述感光元件设于所述基板上，其中，所述感光元件包括：
本征层；
第一掺杂层，所述第一掺杂层设于所述本征层的入光侧；以及
第二掺杂层，所述第二掺杂层设于所述本征层的出光侧；
其中，所述本征层、所述第一掺杂层以及所述第二掺杂层中均掺杂有掺杂物，且在所述本征层、所述第一掺杂层以及所述第二掺杂层中均注入硅离子；
所述X射线探测器还包括：
光转换层，所述光转换层设于所述X射线探测器的入光侧并将X射线转换成可见光，所述感光元件接收所述可见光的光信号，并将所述光信号转换成电信号；
信号读取元件，所述信号读取元件设于所述基板上且与所述感光元件电连接，以接收并读取所述感光元件转换后的电信号；以及
遮光层，所述遮光层位于所述光转换层与所述信号读取元件之间，以遮挡所述光转换层转换后的可见光入射到所述信号读取元件上；
其中，所述显示装置还包括成像装置，所述成像装置与所述信号读取元件电连接。
本申请的实施例提供了一种感光元件、X射线探测器以及显示装置，感光元件包括：本征层；第一掺杂层，所述第一掺杂层设于所述本征层的入光侧；第二掺杂层，所述第二掺杂层设于所述本征层的出光侧；所述本征层、所述第一掺杂层以及所述第二掺杂层中均掺杂有掺杂物，且在所述本征层、所述第一掺杂层以及所述第二掺杂层中均注入硅离子。这样，本申请提供的技术方案中感光元件通过注入硅离子，可以提高光线的接触面积，从而提高感光元件对光线的灵敏度，使得感光元件的光电转换性能更好，且感光元件的光电转换效率更高。
 附图说明
为了更清楚地说明本申请实施例或示例性中的技术方案，下面将对实施例或示例性描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图示出的结构获得其他的附图。
图1为本申请的一个实施例的感光元件的结构示意图；
图2为本申请的另一个实施例的感光元件的结构示意图；
图3为本申请的一个实施例的X射线探测器的结构示意图。
本申请目的的实现、功能特点及优点将结合实施例，参照附图做进一步说明。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请的一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
需要说明，本申请实施例中所有方向性指示（诸如上、下、左、右、前、后……）仅为解释在某一特定姿态（如附图所示）下各部件之间的相对位置关系、运动情况等，如果该特定姿态发生改变时，则该方向性指示也相应地随之改变。
另外，在本申请中涉及“第一”、“第二”等的描述仅为描述目的，而不能理解为指示或暗示其相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括至少一个该特征。另外，各个实施例之间的技术方案可以相互结合，但是必须是以本领域普通技术人员能够实现为基础，当技术方案的结合出现相互矛盾或无法实现时应当认为这种技术方案的结合不存在，也不在本申请要求的保护范围之内。
本申请实施例提出了一种感光元件，如图1所示，示出了本申请的一个实施例的感光元件的结构示意图。该感光元件包括本征层1、第一掺杂层2以及第二掺杂层3；其中，第二掺杂层3、本征层1以及第一掺杂层2由下至上依次层叠，且形成PIN结构，即在一具体的实施例中，该感光元件为PIN型的光电二极管，光电二极管设置为感知光线的强度，并将该光线的光信号转化成电信号，从而将电信号传输至信号读取元件8中。
在一实施例中，第二掺杂层3可作为感光元件的第一电极，第一掺杂层2可作为感光元件的第二电极，第一电极与该信号读取元件8电连接，即可实现将电信号传输至信号读取元件8中。
但在其他实施例中，如图2所示，该感光元件还包括基板4、第一电极层5以及第二电极层6；其中，第一电极层5设置在基板4上，第二掺杂层3、本征层1以及第一掺杂层2由下至上层叠设置在第一电极层5上，第二电极层6设置在第一掺杂层2上。具体地，该基板4设置为支撑整个感光元件，第一电极层5设置为将感光元件转化的电信号传输至信号读取元件8中，即第一电极层5与信号传输元件电连接。
在本实施例中，第一掺杂层2设于本征层1的入光侧，第二掺杂层3设于本征层1的出光侧。
在一实施例中，本征层1、第一掺杂层2以及第二掺杂层3中均掺杂有掺杂物，且在本征层1、第一掺杂层2以及第二掺杂层3中均注入硅离子。具体地，掺杂物为绝缘掺杂物，即在本征层1、第一掺杂层2以及第二掺杂层3是不导电的，因此，本实施例采用在本征层1、第一掺杂层2以及第二掺杂层3中均注入硅离子，使本征层1、第一掺杂层2以及第二掺杂层3的结构发生改变，当注入的硅离子达到预定量时，掺杂物由绝缘掺杂物变化为半导体掺杂物，即可使本征层1、第一掺杂层2以及第二掺杂层3导电，以传递光电信号。在本实施例中，硅离子注入的预定量可以根据注入时的温度、压强等决定，只要能够使本征层1、第一掺杂层2以及第二掺杂层3改变为半导体结构，以传导光电信号即可，在此并无限制。
具体地，第一掺杂层2为第二电极，并与本征层1电连接，当在第一掺杂层2和第二掺杂层3之间施加电压时，光线从第一掺杂层2射入本征层1，该本征层1将检测光线的强度，并将该光线的光信号转化为电信号，由第二掺杂层3传输至信号读取元件8，即由第一电极传输至信号读取元件8。
在一实施例中，该感光元件接收的入射光线应为可见光。
在本申请的实施例中，采用在本征层1、第一掺杂层2以及第二掺杂层3中均掺杂有掺杂物，且在本征层1、第一掺杂层2以及第二掺杂层3中均注入硅离子，使本征层1、第一掺杂层2以及第二掺杂层3变成半导体结构，以传导光电信号。本申请实施例的感光元件通过注入硅离子，可以提高光线的接触面积，从而提高感光元件对光线的灵敏度，使得感光元件的光电转换性能更好，且感光元件的光电转换效率更高。
在一实施例中，掺杂物为SiNx（氮化硅），该氮化硅为绝缘的晶体结构，即本实施例中需要在本征层1、第一掺杂层2以及第二掺杂层3中注入硅离子，以改变氮化硅的结构，从而使本征层1、第一掺杂层2以及第二掺杂层3改变为半导体结构，以传导光电信号。
具体地，在氮化硅掺杂物中，可以通过改变X的值以改变氮离子的浓度，本实施例中X的取值为0.1~1.33。即当X的值发生变化时，氮化硅中的氮离子和硅离子的浓度发生变化，比如，当X为0.1时，氮化硅中的氮离子和硅离子的浓度比为1:10，当X为0.2时，氮化硅中的氮离子和硅离子的浓度比为1:5，以次类推，即可通过改变X的值，使氮化硅中的氮离子和硅离子的浓度比发生变化，从而使感光元件的光吸收波长发生变化，即本实施例中，感光元件的光吸收波长为400nm~670nm，具体数值根据氮化硅中的氮离子和硅离子的浓度比进行调整，从而提高感光元件的光灵敏度。
在其他实施例中，掺杂物还可以为SiOxCy（碳氧化硅）、SiCx（碳化硅）、SiOxNy（氮氧化硅）的至少一种，具体实现的效果与氮化硅的效果相同，在此不再赘述。
可选地，碳氧化硅中氧离子和碳离子的浓度可以根据X、Y的值进行调配，即在碳氧化硅中X、Y的取值均为0.1~1.0，即可以通过改变X、Y的取值，以改变碳氧化硅中的碳离子和氧离子的浓度比发生变化，从而使感光元件的光吸收波长发生变化，即本实施例中，感光元件的光吸收波长为400nm~670nm，具体数值根据氮化硅中的碳离子和氧离子的浓度比进行调整，从而提高感光元件的光灵敏度。
可选地，碳化硅中碳离子的浓度可以根据X的值进行调配，即在碳化硅中X的取值为0.1~1.0，即可以通过改变X的取值，以改变碳氧化硅中的碳离子的浓度，以使碳离子和氧离子的浓度比发生变化，从而使感光元件的光吸收波长发生变化，即本实施例中，感光元件的光吸收波长为400nm~670nm，具体数值根据氮化硅中的碳离子和氧离子的浓度比进行调整，从而提高感光元件的光灵敏度。
可选地，氮氧化硅中氧离子和氮离子的浓度可以根据X、Y的值进行调配，即在碳氧化硅中X的取值为0.1~1.5，Y的取值为0.1~1.3，即可以通过改变X、Y的取值，以改变氮氧化硅中氧离子和氮离子的浓度比发生变化，从而使感光元件的光吸收波长发生变化，即本实施例中，感光元件的光吸收波长为400nm~670nm，具体数值根据氮化硅中的碳离子和氧离子的浓度比进行调整，从而提高感光元件的光灵敏度。
在一具体的实施例中，掺杂物为SiNx、SiOxCy、SiCx、SiOxNy中的一种或者两种或者两种以上的组合，并可以通过改变掺杂物之间各离子的浓度以调整感光元件的光吸收波长，从而提高感光元件的光灵敏度。本实施例中，感光元件的光吸收波长为400nm~670nm，即感光元件吸收的光线为可见光。
在一具体的实施例中，由于该感光元件为PIN型的光电二极管，在第一掺杂层2中还掺杂有P型掺杂物，即第一掺杂层2形成P型半导体，在第二掺杂层3中还掺杂有N型掺杂物，第二掺杂层3形成N型半导体，即在第一掺杂层2中掺杂有P型掺杂物以及在第二掺杂层3中掺杂有N型掺杂物，可以提高第一掺杂层2和第二掺杂层3的性能以及稳定性，从而提高感光元件的性能和稳定性。
在一实施例中，该P型掺杂物为硼离子，可选地，P型掺杂物为B2H6（硼化氢）化合物。在一实施例中，该N型掺杂物为磷离子，可选地，P型掺杂物为PH3（磷化氢）化合物。
在本申请的实施例中，采用在本征层1、第一掺杂层2以及第二掺杂层3中均掺杂有掺杂物，且在本征层1、第一掺杂层2以及第二掺杂层3中均注入硅离子，使本征层1、第一掺杂层2以及第二掺杂层3变成半导体结构，以传导光电信号。本申请实施例的感光元件具有更加灵敏的光电转换性能，从而使感光元件的光电转换效率更高。
基于上述实施例，本申请另一实施例还提供了一种X射线探测器，参照图3所示，该X射线探测器包括基板4以及上述实施例中的感光元件，感光元件设于基板4上。其中，感光元件的第二掺杂层3设于该基板4上，或者，感光元件的第二电极设于该基板4上。在一实施例中，基板4可以采用玻璃基板4、硅片以及聚酰亚胺PI塑料基板4等，在此并无限制。
在一实施例中，如图1~2所示，感光元件包括本征层1、第一掺杂层2以及第二掺杂层3，第一掺杂层2设于本征层1的入光侧，第二掺杂层3设于本征层1的出光侧，本征层1、第一掺杂层2以及第二掺杂层3中均掺杂有掺杂物，且在本征层1、第一掺杂层2以及第二掺杂层3中均注入硅离子。
具体地，掺杂物为绝缘掺杂物，即在本征层1、第一掺杂层2以及第二掺杂层3是不导电的，因此，本实施例采用在本征层1、第一掺杂层2以及第二掺杂层3中均注入硅离子，使本征层1、第一掺杂层2以及第二掺杂层3的结构发生改变，当注入的硅离子达到预定量时，掺杂物由绝缘掺杂物变化为半导体掺杂物，即可使本征层1、第一掺杂层2以及第二掺杂层3导电，以传递光电信号。在本实施例中，硅离子注入的预定量可以根据注入时的温度、压强等决定，只要能够使本征层1、第一掺杂层2以及第二掺杂层3改变为半导体结构，以传导光电信号即可，在此并无限制。
进一步地，掺杂物至少包括SiNx、SiOxCy、SiCx、SiOxNy中的一种。
进一步地，感光元件的吸收波长为400nm~670nm。
进一步地，如图2所示，该感光元件还包括基板4、第一电极层5以及第二电极层6；其中，第一电极层5设置在基板4上，第二掺杂层3、本征层1以及第一掺杂层2由下至上层叠设置在第一电极层5上，第二电极层6设置在第一掺杂层2上。具体地，该基板4设置为支撑整个感光元件，第一电极层5设置为将感光元件转化的电信号传输至信号读取元件8中，即第一电极层5与信号传输元件电连接，以通过第一电极层5以及第二电极层6使感光元件与信号读取元件8连接。
在一具体的实施例中，X射线探测器还包括光转换层7、信号读取元件8以及遮光层9。具体地，光转换层7设于X射线探测器的入光侧并将X射线转换成可见光，感光元件接收可见光的光信号，并将光信号转换成电信号；信号读取元件8设于基板4上且与感光元件电连接，以接收并读取感光元件转换后的电信号；遮光层9位于光转换层7与信号读取元件8之间，以遮挡光转换层7转换后的可见光入射到信号读取元件8上。
在一实施例中，信号读取元件8可选为TFT（薄膜晶体管）结构，设置为读取感光元件的电信号，该电信号为电流信号。
在一实施例中，X射线探测器上还设有一X射线发生器（图未示），设置为发射X射线，X射线探测器设于X射线发生器的入光侧，即光转换层7设于X射线探测器的入光侧。具体地，光转换层7为采用柱状排列的碘化铯闪烁体，设置为将X射线转换成可见光，并照射于感光元件上。
在一实施例中，光转换层7的光吸收波长为420nm~560nm。可选地，在光转换层7中还可以掺杂其它的掺杂物，以吸收特定波长的可见光，比如，在光转换层7中掺杂铊离子，即可吸收波长为550nm的可见光。
在一实施例中，信号读取元件8的漏极设于基板4上，并与感光元件的第二掺杂层3电连接，以传导电信号。当然，在本实施例中，信号读取元件8的漏极与感光元件的第二掺杂层3为共用的电极，使电信号的传导更加高效、快捷。
在一实施例中，遮光层9设于光转换层7与信号读取元件8之间，从而遮挡经由光转换层7转换后的可见光照射到信号读取元件8的有源层，从而破坏到整个信号读取元件8的效率。
在一具体的实施例中，该X射线探测器还包括保护层10，保护层10填充于信号读取元件8与光转换层7之间的空隙，将遮光层9、信号读取元件8及感光元件与外界环境隔离。
为了防止电信号流失，X射线探测器的各元件需要严格地与外界环境隔绝，因此，该保护层10填充于信号读取元件8与光转换层7之间的空隙，以将将遮光层9、信号读取元件8及感光元件与外界环境隔离。
在一实施例中，光转换层7贴合于保护层10背离信号读取元件的一侧，该保护层10设置为支撑光转换层7，即增加了光转换层7与保护层10的相容性，减少经光转换层7转换后的可见光的损失，即可提高光线的利用率。具体地，光转换层7还可以是将碘化铯闪烁体经过化学气象沉积到一块基材上，从而形成光转换薄膜，将该光转换薄膜贴合于保护层10上，可选地，该光转换薄膜可通过胶水、双面胶等粘贴物贴合于保护层10上，在本申请中并无限制。
在一实施例中，光转换层7中的碘化铯可直接利用化学气象沉积的方式沉积于保护层10上，比如，可将碘化铯直接加热至碘化铯的熔点，使其碘化铯变为气体，然后再沉积于保护层10，也可增加了光转换层7与保护层10的相容性，减少经光转换层7转换后的可见光的损失，即可提高光线的利用率。
在一实施例中，通过将感光元件设置在信号读取元件8的侧边，使得感光元件能够大面积地接受可见光照射，不受信号读取元件8的限制，具有很高的光电转换效率。当X射线探测器应用于显示装置，感光元件位于光转换层7与遮光层9之间的设置形式可以减少X射线下的照射时间或降低X射线的照射强度，由于X射线探测器具有很高的光电转换效率，可以达到同样的成像效果，因此降低了X射线影响。
本申请X射线探测器采用上述实施例的感光元件，且该感光元件通过注入硅离子，可以提高光线的接触面积，从而提高感光元件对光线的灵敏度，使得感光元件的光电转换性能更好，且感光元件的光电转换效率更高，即提高了X射线探测器的光电转换效率。
基于上述所有实施例，参照图1-图3，本申请实施例还提出一种显示装置，该显示装置包括前述X射线探测器及成像装置（图未示），X射线探测器与成像装置电连接，X射线探测器因光电效应产生的电信号经成像装置形成影像。
在一实施例中，如图3所示，X射线探测器包括基板4以及上述实施例中的感光元件，感光元件设于基板4上。其中，感光元件的第二掺杂层3设于该基板4上，或者，感光元件的第二电极设于该基板4上。在一实施例中，基板4可以采用玻璃基板4、硅片以及聚酰亚胺PI塑料基板4等，在此并无限制。
进一步地，如图1~2所示，感光元件包括本征层1、第一掺杂层2以及第二掺杂层3，第一掺杂层2设于本征层1的入光侧，第二掺杂层3设于本征层1的出光侧，本征层1、第一掺杂层2以及第二掺杂层3中均掺杂有掺杂物，且在本征层1、第一掺杂层2以及第二掺杂层3中均注入硅离子。
具体地，掺杂物为绝缘掺杂物，即在本征层1、第一掺杂层2以及第二掺杂层3是不导电的，因此，本实施例采用在本征层1、第一掺杂层2以及第二掺杂层3中均注入硅离子，使本征层1、第一掺杂层2以及第二掺杂层3的结构发生改变，当注入的硅离子达到预定量时，掺杂物由绝缘掺杂物变化为半导体掺杂物，即可使本征层1、第一掺杂层2以及第二掺杂层3导电，以传递光电信号。在本实施例中，硅离子注入的预定量可以根据注入时的温度、压强等决定，只要能够使本征层1、第一掺杂层2以及第二掺杂层3改变为半导体结构，以传导光电信号即可，在此并无限制。
在一具体的实施例中，如图3所示，X射线探测器还包括光转换层7、信号读取元件8以及遮光层9。具体地，光转换层7设于X射线探测器的入光侧并将X射线转换成可见光，感光元件接收可见光的光信号，并将光信号转换成电信号；信号读取元件8设于基板4上且与感光元件电连接，以接收并读取感光元件转换后的电信号；遮光层9位于光转换层7与信号读取元件8之间，以遮挡光转换层7转换后的可见光入射到信号读取元件8上。
在一实施例中，遮光层9设于光转换层7与信号读取元件8之间，从而遮挡经由光转换层7转换后的可见光照射到信号读取元件8的有源层，防止破坏到整个信号读取元件8的效率。
在本实施例中，由于X射线探测器内起光电转换功能的感光元件具有灵敏且高效的光电转换性能，因此，在同样的成像效果下，可以降低X射线的照射强度或照射时间，减少X射线长时间照射的影响。
本申请技术方案采用上述的X射线探测器，且该X射线探测器的感光元件通过注入硅离子，可以提高光线的接触面积，从而提高感光元件对光线的灵敏度，使得感光元件的光电转换性能更好，且感光元件的光电转换效率更高，从而提高了X射线探测器的光电转换效率，即提高了显示装置的光电转换效率。
以上所述仅为本申请的可选实施例，并非因此限制本申请的专利范围，凡是在本申请的构思下，利用本申请说明书及附图内容所作的等效结构变换，或直接/间接运用在其他相关的技术领域均包括在本申请的专利保护范围内。

Claims (17)

  1. 一种感光元件，其中，所述感光元件包括：
    本征层；
    第一掺杂层，所述第一掺杂层设于所述本征层的入光侧；以及
    第二掺杂层，所述第二掺杂层设于所述本征层的出光侧；
    其中，所述本征层、所述第一掺杂层以及所述第二掺杂层中均掺杂有掺杂物，且在所述本征层、所述第一掺杂层以及所述第二掺杂层中均注入硅离子。
  2. 根据权利要求1所述的感光元件，其中，所述掺杂物至少包括SiNx、SiOxCy、SiCx、SiOxNy中的一种。
  3. 根据权利要求1所述的感光元件，其中，所述第一掺杂层中还掺杂有P型掺杂物。
  4. 根据权利要求1所述的感光元件，其中，所述第二掺杂层中还掺杂有N型掺杂物。
  5. 根据权利要求1所述的感光元件，其中，所述感光元件的吸收波长为400nm~670nm。
  6. 根据权利要求1所述的感光元件，其中，所述感光元件接收的入射光线为可见光。
  7. 根据权利要求1所述的感光元件，其中，所述感光元件还包括第一电极层以及第二电极层，第二掺杂层、本征层以及第一掺杂层由下至上层叠设置在第一电极层上，第二电极层设置在第一掺杂层上。
  8. 一种X射线探测器，其中，所述X射线探测器包括基板以及感光元件，所述感光元件设于所述基板上，其中，所述感光元件包括：
    本征层；
    第一掺杂层，所述第一掺杂层设于所述本征层的入光侧；以及
    第二掺杂层，所述第二掺杂层设于所述本征层的出光侧；
    其中，所述本征层、所述第一掺杂层以及所述第二掺杂层中均掺杂有掺杂物，且在所述本征层、所述第一掺杂层以及所述第二掺杂层中均注入硅离子；
    所述X射线探测器还包括：
    光转换层，所述光转换层设于所述X射线探测器的入光侧并将X射线转换成可见光，所述感光元件接收所述可见光的光信号，并将所述光信号转换成电信号；
    信号读取元件，所述信号读取元件设于所述基板上且与所述感光元件电连接，以接收并读取所述感光元件转换后的电信号；以及
    遮光层，所述遮光层位于所述光转换层与所述信号读取元件之间，以遮挡所述光转换层转换后的可见光入射到所述信号读取元件上。
  9. 根据权利要求8所述的感光元件，其中，所述掺杂物至少包括SiNx、SiOxCy、SiCx、SiOxNy中的一种。
  10. 根据权利要求8所述的感光元件，其中，所述感光元件的吸收波长为400nm~670nm。
  11. 根据权利要求8所述的感光元件，其中，所述感光元件还包括基板、第一电极层以及第二电极层，所述第一电极层设置在基板上，第二掺杂层、本征层以及第一掺杂层由下至上层叠设置在第一电极层上，第二电极层设置在第一掺杂层上。
  12. 根据权利要求8所述的X射线探测器，其中，所述X射线探测器还包括保护层，所述保护层填充于所述信号读取元件与所述光转换层之间的空隙，将所述遮光层、所述信号读取元件及所述感光元件与外界环境隔离。
  13. 根据权利要求12所述的X射线探测器，其中，所述光转换层为采用柱状排列的碘化铯闪烁体。
  14. 根据权利要求13所述的X射线探测器，其中，所述光转换层贴合于所述保护层背离所述信号读取元件的一侧。
  15. 根据权利要求14所述的X射线探测器，其中，所述光转换层的吸收波长为420nm~560nm。
  16. 根据权利要求8所述的X射线探测器，其中，所述信号读取元件为薄膜晶体管结构。
  17. 一种显示装置，其中，所述显示装置包括X射线探测器，所述X射线探测器包括基板以及感光元件，所述感光元件设于所述基板上，其中，所述感光元件包括：
    本征层；
    第一掺杂层，所述第一掺杂层设于所述本征层的入光侧；以及
    第二掺杂层，所述第二掺杂层设于所述本征层的出光侧；
    其中，所述本征层、所述第一掺杂层以及所述第二掺杂层中均掺杂有掺杂物，且在所述本征层、所述第一掺杂层以及所述第二掺杂层中均注入硅离子；
    所述X射线探测器还包括：
    光转换层，所述光转换层设于所述X射线探测器的入光侧并将X射线转换成可见光，所述感光元件接收所述可见光的光信号，并将所述光信号转换成电信号；
    信号读取元件，所述信号读取元件设于所述基板上且与所述感光元件电连接，以接收并读取所述感光元件转换后的电信号；以及
    遮光层，所述遮光层位于所述光转换层与所述信号读取元件之间，以遮挡所述光转换层转换后的可见光入射到所述信号读取元件上；
    其中，所述显示装置还包括成像装置，所述成像装置与所述信号读取元件电连接。
PCT/CN2019/129339 2019-01-11 2019-12-27 感光元件、x射线探测器及显示装置 Ceased WO2020143487A1 (zh)

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